TWI547320B - Substrate processing apparatus and substrate processing method - Google Patents

Description

Substrate processing apparatus and substrate processing method

The present invention relates to a substrate processing apparatus and a substrate processing method.

In the manufacturing process of the substrate, a substrate processing apparatus is used in which the surface treatment of the substrate such as the chemical liquid treatment using the chemical liquid and the washing liquid using pure water or the like is performed, and then the drying treatment is performed. As such a substrate processing apparatus, a one-chip apparatus that processes a substrate piece by piece and a batch type apparatus that processes a plurality of substrates in a batch are used.

The monolithic substrate processing apparatus usually performs a chemical treatment for supplying a chemical liquid onto a surface of a rotating substrate, and a washing process of supplying pure water, and then the substrate is rotated at a high speed to perform dry cleaning. At this time, although most of the scattered treatment liquid flows down on the inner wall of the shroud surrounding the rotary chuck, the liquid is discharged, but one of the treatment liquids remains attached to the inner wall of the shield. The situation of being recycled. When the treatment liquid adhering to the inside of the shield is dried, it becomes particles, which causes contamination of the substrate. Therefore, the shroud cleaning process of the cleaning shroud is usually performed each time a specific number of sheets (typically, a specific batch) of the substrate is processed. Such a monolithic substrate processing apparatus is disclosed, for example, in Patent Document 1.

The substrate processing apparatus disclosed in Patent Document 1 includes a rotating chuck that holds the substrate in a substantially horizontal posture and rotates it, and a nozzle that is held on the rotating chuck A processing liquid is supplied to the upper surface of the substrate; and a shield surrounds the periphery of the rotating chuck to block the processing liquid scattered from the substrate.

[Previous Technical Literature] [Patent Literature]

[Patent Document 1] Japanese Patent Laid-Open Publication No. 2012-231049

In the substrate processing apparatus disclosed in Patent Document 1, the washing liquid (typically pure water) is supplied to the rotating base portion (circular plate portion) in the rotating chuck that is rotated without holding the substrate. The washing liquid is scattered from the rotating base by the centrifugal force of the rotation. The washing liquid is scattered to the shield and its surroundings to clean the scattered parts.

However, as in the case of Patent Document 1, in the case where the washing liquid is supplied to the rotating rotary base to disperse the washing liquid, the washing liquid collides with the chuck mechanism for holding the substrate in the rotary chuck (typically In the case of the protrusion shape, it is difficult to cause the washing liquid to be suitably scattered to the cleaning target portion to which the chemical liquid adheres.

On the other hand, in the substrate processing apparatus including the special fixture for the shroud cleaning process, and the washing liquid is supplied to the cleaning jig held on the rotating chuck and rotated, the washing liquid is scattered, and the washing liquid can be avoided. Colliding with the above-mentioned problems on the chuck mechanism, there is a new problem that the cleaning jig must be removed every time the shroud cleaning process is performed, resulting in a reduction in the amount of processing. Further, when a configuration dedicated to the cleaning of the shield is provided separately from the configuration required for the substrate processing as in this aspect, there is also a problem that the substrate processing apparatus is enlarged.

Further, in such a substrate processing apparatus, during the period of the substrate processing of the previous batch (the substrate group of the specific number of sheets subjected to the same processing) and the subsequent batch of substrate processing is started, the above-mentioned protection is usually performed. Cover cleaning process. Therefore, when a situation in which the above-described shroud cleaning process is required is generated in the middle of the batch processing, it is difficult to implement not to be executed. The shroud cleaning process begins when the batch processing is completed.

The present invention has been made in view of the above problems, and an object of the present invention is to provide a cleaning agent that can be suitably scattered to a cleaning target portion, thereby suppressing an increase in size of the apparatus, and starting the cleaning of the shield without waiting for the batch processing to be performed. A substrate processing apparatus and a substrate processing method to be processed.

In order to solve the above problems, the invention of claim 1 is characterized in that it is a substrate processing apparatus for sequentially processing a plurality of substrates, and includes: a processing apparatus body including a substrate holding device for holding the substrate, and holding the substrate a rotary driving device for rotating the device, a chemical supply device for supplying a chemical solution to the substrate held on the substrate holding device, a cleaning liquid supply device for supplying a cleaning liquid to the substrate held on the substrate holding device, and surrounding the above a shield surrounding the substrate holding device; and a control device preset with a plurality of substrate processing modes, controlling the processing device body, selecting one of the plurality of modes for each substrate and performing the same; and the plurality of modes The method includes: (A) a normal mode, comprising: a first chemical liquid step, wherein a substrate is held by the substrate holding device and rotated, and a liquid chemical is supplied to the substrate, and the substrate is chemically treated; a first washing step in which the substrate is held by one side of the substrate holding device Rotating, supplying a washing liquid to the substrate to rinse the chemical liquid from the substrate; (B) a special mode comprising a second washing step, the second washing step being different from an operating condition different from the first washing step, While the substrate is held by the substrate holding device and rotated, a washing liquid is supplied to the substrate, and the shroud is washed by the washing liquid scattered from the rotating substrate.

According to a second aspect of the invention, in the substrate processing apparatus of the first aspect, the special mode further includes a second chemical liquid step corresponding to the first chemical liquid step in the normal mode.

The invention of claim 3 is the substrate processing apparatus of claim 2, characterized in that The first chemical liquid step includes a plurality of units of the first chemical liquid step, and the first washing step includes a plurality of units of the first washing step, wherein the normal mode alternately executes the unit first chemical liquid step and the unit In the processing mode of the washing step, the second chemical liquid step includes a plurality of units of the second chemical liquid step, and the second washing step includes a plurality of units of the second washing step, wherein the special mode alternately executes the unit second liquid And a processing mode of the second cleaning step of the unit, wherein at least one of the plurality of unit second washing steps is performed under an operating condition different from at least one of the plurality of unit first washing steps.

The substrate processing apparatus according to any one of claims 1 to 3, characterized in that the normal mode is set as a preset mode among the plurality of modes, and an exception is selected when a specific condition is satisfied. The above special mode.

According to a fifth aspect of the invention, in the substrate processing apparatus of the first aspect, the second washing step of the special mode includes a part adjusting substep of moving the shroud up and down, and adjusting the self-adjusting The washing liquid scattered on the substrate collides with a portion of the shroud.

The invention of claim 6 is the substrate processing apparatus according to claim 5, characterized in that the speed at which the shield is moved up and down is changed in accordance with the upper and lower positions of the shield.

The invention of claim 7 is the substrate processing apparatus according to claim 5, characterized in that the vertical movement of the shroud is repeated in a fixed upper and lower sections.

The invention of claim 1 is the substrate processing apparatus according to the first aspect, wherein the second washing step of the special mode includes a speed adjusting substep of variably adjusting a rotational speed at which the substrate is rotated.

The invention of claim 1 is the substrate processing apparatus according to the first aspect, wherein the second washing step of the special mode includes a supply amount adjuster that variably adjusts a supply amount of the washing liquid supplied onto the substrate step.

The invention of claim 10 is characterized in that it uses the following components in order to plural A substrate processing method for processing a substrate, that is, a processing apparatus main body, comprising: a substrate holding device that holds a substrate, a rotation driving device that rotates the substrate holding device, and supplies a chemical liquid to the substrate held on the substrate holding device a chemical supply device, a cleaning liquid supply device for supplying a cleaning liquid to the substrate held on the substrate holding device, and a shield surrounding the substrate holding device; and a control device for controlling the processing device body; The substrate processing method includes: a setting step of presetting a plurality of modes in the control device; and a processing execution step of selecting each of the plurality of modes in the control device for each of the plurality of substrates And performing the plurality of modes; and the plurality of modes include: (A) a normal mode comprising: a first chemical liquid step of holding a substrate by the substrate holding device and rotating the substrate, and supplying a drug to the substrate a liquid to thereby perform a chemical treatment on the substrate; and a first washing step, which is a Holding and rotating the substrate by the substrate holding device, the cleaning liquid is supplied to the substrate to rinse the chemical liquid from the substrate; and (B) the special mode includes a second washing step, the second washing step The substrate is held by the substrate holding device and rotated by the substrate holding device according to the operating conditions different from the first washing step, and the washing liquid is supplied to the substrate to be washed by the washing liquid which is scattered from the substrate. The above shield.

The invention according to claim 10 is characterized in that the special mode further includes a second chemical liquid step corresponding to the first chemical liquid step in the normal mode.

The invention of claim 12 is the substrate processing method according to claim 11, wherein the first chemical liquid step includes a plurality of units of the first chemical liquid step, and the first washing step includes a plurality of units of the first washing step, The normal mode alternately executes the processing mode of the unit first chemical liquid step and the unit first washing step, wherein the second chemical liquid step includes a plurality of units of the second chemical liquid step, and the second washing step includes a plurality of units. 2 washing step, wherein the special mode alternately executes the unit second chemical liquid step and the above In the processing mode of the second washing step, at least one of the plurality of unit second washing steps is performed under an operating condition different from at least one of the plurality of unit first washing steps.

The substrate processing method according to any one of claims 10 to 12, characterized in that the normal mode is set as a preset mode among the plurality of modes, and an exception is selected when a specific condition is satisfied. The above special mode.

The invention of claim 14 is the substrate processing method according to claim 10, wherein the second cleaning step of the special mode includes a portion adjustment sub-step of moving the shield up and down, and adjusting The washing liquid scattered on the substrate collides with a portion of the shroud.

The invention of claim 15 is the substrate processing method according to claim 14, characterized in that the speed at which the shield is moved up and down is changed according to the upper and lower positions of the shield.

The invention of claim 14 is the substrate processing method according to claim 14, characterized in that the vertical movement of the shroud is repeated in a fixed upper and lower sections.

According to a seventh aspect of the invention, in the substrate processing method of the first aspect, the second washing step of the special mode includes a speed adjusting substep of variably adjusting a rotational speed of rotating the substrate.

The invention of claim 18, wherein the second washing step of the special mode includes a supply amount adjuster that variably adjusts a supply amount of the washing liquid supplied to the substrate step.

In the invention described in the first aspect to the eighteenth aspect, a plurality of modes for operating the substrate processing apparatus are set in the control device. The special mode includes a second washing step of holding the substrate by the substrate holding device and rotating it by the rotation driving device according to an operating condition different from the first washing step of the normal mode, and supplying the substrate to the substrate Washing the liquid while rinsing the liquid from the substrate and scattering it by rotating the substrate Clean the shield with the washing liquid.

In the special mode, since the substrate is held on the substrate holding device, the washing liquid scattered from the substrate is less likely to collide with the holding mechanism of the substrate holding device (for example, the chuck mechanism). Therefore, the washing liquid can be suitably scattered to the cleaning target portion of the shield. Further, in the special mode, it is not necessary to provide a cleaning-only mechanism such as a cleaning jig, and it is possible to suppress an increase in size of the device. Further, the special mode is a mode that can be executed by having a substrate in the chamber of the device, and can be executed even in the middle of batch processing.

In the inventions described in the second aspect and the tenth aspect, the special mode further includes a second chemical liquid step corresponding to the first chemical liquid step in the normal mode. Therefore, the substrate on which the special mode is executed can also be used as the final product in the same manner as the substrate on which the normal mode is performed.

In the invention described in claim 5 and claim 14, the second washing step of the special mode includes a portion adjusting substep of moving the shield up and down to adjust the collision of the washing liquid scattered from the substrate to the guard. The part of the cover. Therefore, the cleaning of the shield can be performed with high precision.

In the invention of claim 8 and claim 17, the second washing step of the special mode includes a speed adjusting substep of variably adjusting the rotational speed at which the substrate is rotated. Since the behavior of the washing liquid scattered from the substrate depends on the rotation speed of the substrate, the cleaning of the shield can be performed accurately over a wide range by variably adjusting the rotation speed.

In the invention described in claim 9 and claim 18, the second washing step of the special mode includes a supply amount adjusting substep of variably adjusting the supply amount of the washing liquid supplied onto the substrate. Since the behavior of the washing liquid scattered from the substrate depends on the supply amount of the washing liquid on the substrate, the cleaning of the shroud can be performed with high precision by variably adjusting the supply amount.

1‧‧‧Substrate processing unit

9‧‧‧Control Department

10‧‧‧ chamber

11‧‧‧ side wall

12‧‧‧ ceiling wall

13‧‧‧ bottom wall

14‧‧‧Fan filter unit

15‧‧‧ divider

18‧‧‧Exhaust pipe

20‧‧‧Rotating chuck

21‧‧‧Spinning base

21a‧‧‧ Keep face

22‧‧‧Rotary motor

23‧‧‧ Covering components

24‧‧‧Rotary axis

25‧‧‧Flange members

26‧‧‧ chuck member

28‧‧‧ Lower surface treatment liquid nozzle

30‧‧‧Upper surface treatment liquid nozzle

31‧‧‧Spray head

32‧‧‧Nozzle arm

33‧‧‧Nozzle abutment

40‧‧‧Handling shield

41‧‧‧ inner shield

42‧‧‧中护罩

43‧‧‧ outer shield

43a‧‧‧Bottom

43b‧‧‧Upper

43c‧‧‧Return

44‧‧‧ bottom

45‧‧‧Inside wall

46‧‧‧Outer wall

47‧‧‧1st guide

47b‧‧‧Upper end

48‧‧‧ Middle Wall

49‧‧‧Abandoned trough

50‧‧‧Inside recycling tank

51‧‧‧Outside recycling tank

52‧‧‧2nd Guide

52a‧‧‧Bottom

52b‧‧‧Upper end

52c‧‧‧Return

53‧‧‧ treatment liquid separation wall

60‧‧‧Two-fluid nozzle

62‧‧‧Nozzle arm

63‧‧‧Nozzle abutment

64‧‧‧ gas head

AR1, AR2, AR3, AR4, AR5, AR6, AR7, AR8‧‧‧ tracks

CX‧‧‧ Axis

DB‧‧‧Processing device body

NM‧‧‧ normal mode

OPa, OPb, OPc‧‧‧ openings

RM‧‧‧ special mode

W‧‧‧Substrate

Fig. 1 is a plan view of a substrate processing apparatus 1 according to an embodiment.

Fig. 2 is a longitudinal sectional view showing a substrate processing apparatus 1 of the embodiment.

Fig. 3 is a flow chart showing the normal mode NM of the embodiment.

4 is a longitudinal cross-sectional view showing the substrate processing apparatus 1 in a case where the chemical liquid is scattered from the substrate W toward the outer shroud 43 in the normal mode NM of the embodiment.

FIG. 5 is a longitudinal cross-sectional view showing the substrate processing apparatus 1 in the case where the pure water is scattered from the substrate W toward the inner shroud 41 in the normal mode NM of the embodiment.

Fig. 6 is a longitudinal cross-sectional view showing the substrate processing apparatus 1 in the case where the pure water is scattered from the substrate W toward the center shroud 42 in the normal mode NM of the embodiment.

Fig. 7 is a flow chart showing a special mode RM of the embodiment.

Figure 8 is a timing diagram of the shroud cleaning step of the embodiment.

FIG. 9 is a longitudinal cross-sectional view showing the substrate processing apparatus 1 in a case where the chemical liquid is scattered from the substrate W toward the outer shroud 43 in the special mode RM of the embodiment.

FIG. 10 is a longitudinal cross-sectional view showing the substrate processing apparatus 1 in a case where the chemical liquid is scattered from the substrate W toward the intermediate shroud 42 in the special mode RM of the embodiment.

Fig. 11 is a longitudinal cross-sectional view showing the substrate processing apparatus 1 in a case where the chemical liquid is scattered from the substrate W toward the inner shroud 41 in the special mode RM of the embodiment.

Figure 12 is a timing diagram of the shroud cleaning step of the variation.

Figure 13 is a timing diagram of the shroud cleaning step of the variation.

Fig. 14 is a flow chart showing a special mode RM of a variation.

15 is a longitudinal cross-sectional view showing the substrate processing apparatus 1 in a case where the chemical liquid is scattered from the substrate W toward the inner shroud 41 in the special mode RM of the modification.

Hereinafter, each embodiment will be described in detail.

<1 Embodiment>

<1.1 Configuration of Substrate Processing Apparatus 1>

Hereinafter, embodiments of the present invention will be described in detail with reference to the drawings. Bright.

1 is a plan view of a substrate processing apparatus 1. 2 is a longitudinal sectional view of the substrate processing apparatus 1. The substrate processing apparatus 1 is a single-chip processing apparatus that processes the semiconductor substrate W one by one, and performs chemical processing on the circular ruthenium substrate W (supply a cleaning liquid such as SC1 liquid, DHF liquid, or SC2 liquid as a chemical liquid) After the washing treatment (supplying pure water to remove the chemical liquid), drying treatment is performed. In addition, FIG. 1 shows a state in which the substrate W is not held on the spin chuck 20, and FIG. 2 shows a state in which the substrate W is held on the spin chuck 20.

The substrate processing apparatus 1 includes the following main components in the chamber 10: a rotating chuck 20 that holds the substrate W in a horizontal posture (normal posture in the vertical direction); and an upper surface treatment liquid nozzle 30 for The processing liquid is supplied to the upper surface of the substrate W held on the spin chuck 20; and the protective cover 40 surrounds the periphery of the rotating chuck 20. Further, a partitioning plate 15 that partitions the inner space of the chamber 10 up and down is provided around the processing shroud 40 in the chamber 10. Further, in the present specification, the treatment liquid contains a general term for both the chemical liquid and the washing liquid (pure water).

The chamber 10 includes a side wall 11 in the vertical direction, a ceiling wall 12 that closes the upper side of the space surrounded by the side wall 11, and a bottom wall 13 that closes the lower side. The space surrounded by the side wall 11, the ceiling wall 12, and the bottom wall 13 serves as a processing space for the substrate W. Further, in one of the side walls 11 of the chamber 10, a loading and unloading port for carrying the substrate W into the chamber 10 and moving out of the chamber 10, and a shutter for opening and closing the loading/unloading port are provided (both of which are omitted ).

A fan filter unit (FFU) 14 is mounted on the ceiling wall 12 of the chamber 10 for further purifying and supplying air to the chamber in the clean room provided with the substrate processing apparatus 1. Processing space within 10. The fan filter unit 14 includes a fan and a filter (for example, a HEPA (High Efficiency particulate air filter) filter) for introducing air into the clean room and feeding it into the chamber 10, thereby being in the chamber 10 A downflow of clean air is formed within the processing space within. In order to uniformly disperse the clean air supplied from the fan filter unit 14, a punching hole having a plurality of blow holes may be formed. The plate is disposed directly below the ceiling wall 12.

The rotary chuck 20 (substrate holding device) includes a disk-shaped rotary base 21 fixed in a horizontal posture to an upper end of a rotary shaft 24 extending in a vertical direction, and a rotary motor 22 disposed on the rotary base 21 The rotating shaft 24 is rotated downward; and a cylindrical covering member 23 that surrounds the periphery of the rotary motor 22. The outer diameter of the disk-shaped rotating base 21 is slightly larger than the diameter of the circular substrate W held on the rotating chuck 20. The spin base 21 includes a holding surface 21a opposed to the entire surface of the lower surface of the substrate W which should be held.

A plurality of (four in the present embodiment) chuck members 26 are erected on the peripheral edge portion of the holding surface 21a of the spin base 21. The plurality of chuck members 26 are disposed at equal intervals on the circumference corresponding to the outer circumference of the circular substrate W (if the four chuck members 26 are spaced apart by 90 degrees as in the present embodiment). The plurality of chuck members 26 are interlockedly driven by a connection mechanism (not shown) housed in the spin base 21. The rotating chuck 20 holds the substrate W by abutting each of the plurality of chuck members 26 against the edge of the substrate W, whereby the substrate W is self-retained while being close to the holding surface 21a above the spin base 21. The faces 21a are spaced apart by a certain interval and held in a horizontal posture (refer to FIG. 2). Further, the rotating chuck 20 can separate each of the plurality of chuck members 26 from the edge of the substrate W to release the clamping.

The lower end of the covering member 23 covering the rotary motor 22 is fixed to the bottom wall 13 of the chamber 10, and its upper end reaches directly below the rotating base 21. A flange-like member 25 is provided at an upper end portion of the cover member 23, and the flange-like member 25 projects outward from the cover member 23 substantially horizontally, and further extends downward in a curved manner. In a state where the substrate W is held by the rotating chuck 20 by the sandwiching of the plurality of chuck members 26, the rotary motor 24 (rotation driving device) rotates the rotary shaft 24, whereby the substrate W is wound around the center of the substrate W. The axis CX in the vertical direction rotates. Further, the driving of the rotary motor 22 is controlled by the control unit 9.

The upper surface treatment liquid nozzle 30 is configured to mount the discharge head 31 at the front end of the nozzle arm 32. The base end side of the nozzle arm 32 is fixedly coupled to the nozzle base 33. The nozzle base 33 is rotatable about an axis in the vertical direction by a motor (not shown). By rotating the nozzle base 33, the upper The discharge head 31 of the surface treatment liquid nozzle 30 moves between the processing position above the rotary chuck 20 and the standby position outside the processing shroud 40, along an arcuate trajectory in the horizontal plane. The upper surface treatment liquid nozzle 30 is configured to supply a plurality of processing liquids (including at least a washing liquid (pure water)). The treatment liquid ejected from the discharge head 31 of the upper surface treatment liquid nozzle 30 at the treatment position is immersed in the upper surface of the substrate W held on the rotary chuck 20. Further, the upper surface treatment liquid nozzle 30 is swingable above the holding surface 21a of the rotary base 21 by the rotation of the nozzle base 33. In the present embodiment, the upper surface treatment liquid nozzle 30 is configured as a supply liquid and a washing liquid, and the upper surface treatment liquid nozzle 30 has a function as a chemical supply device and as a washing liquid supply device. Features.

On the other hand, the lower surface treatment liquid nozzle 28 is provided in the vertical direction so as to be inserted into the inner side of the rotary shaft 24. The upper end opening of the lower surface treatment liquid nozzle 28 is formed at a position opposed to the center of the lower surface of the substrate W held on the rotary chuck 20. The lower surface treatment liquid nozzle 28 is also configured to supply a plurality of treatment liquids. The treatment liquid sprayed from the lower surface treatment liquid nozzle 28 is immersed in the lower surface of the substrate W held on the rotary chuck 20.

Further, in the substrate processing apparatus 1, a two-fluid nozzle 60 is provided separately from the upper surface treatment liquid nozzle 30. The two-fluid nozzle 60 mixes a washing liquid such as pure water and a pressurized gas to generate droplets, and ejects the mixed fluid of the liquid droplets and the gas onto the washing nozzle on the substrate W. The two-fluid nozzle 60 is configured such that a liquid head (not shown) is attached to the front end of the nozzle arm 62, and the gas head 64 is attached to the support member provided to be branched from the nozzle arm 62. The base end side of the nozzle arm 62 is fixedly coupled to the nozzle base 63. The nozzle base 63 is rotatable about an axis in the vertical direction by a motor (not shown). By rotating the nozzle base 63, the two-fluid nozzle 60 moves in an arc shape in the horizontal direction between the processing position above the rotating chuck 20 and the standby position outside the processing shroud 40. A washing liquid such as pure water is supplied to the liquid head, and a pressurized inert gas (nitrogen (N ₂ ) in the present embodiment) is supplied to the gas head 64. The mixed fluid of the washing liquid sprayed from the two-fluid nozzle 60 at the treatment position is sprayed onto the upper surface of the substrate W held on the rotary chuck 20.

The treatment shroud 40 surrounding the rotating chuck 20 includes a plurality of shrouds that are vertically movable independently of each other, namely an inner shroud 41, a middle shroud 42, and an outer shroud 43. The inner shroud 41 surrounds the periphery of the rotating chuck 20 and has a shape that is substantially rotationally symmetrical with respect to the axis CX passing through the center of the substrate W held on the rotating chuck 20. The inner shroud 41 integrally includes a bottom portion 44 that is annular in plan view, a cylindrical inner wall portion 45 that stands upward from the inner periphery of the bottom portion 44, and a cylindrical outer wall portion 46 that is from the bottom. The outer peripheral edge of the 44 is erected upward; the first guiding portion 47 is erected from between the inner wall portion 45 and the outer wall portion 46, and the upper end portion draws a smooth arc and is closer to the center side (close to the rotating chuck 20) The side of the axis C of the substrate W extends obliquely upward; and the cylindrical intermediate wall portion 48 is erected upward from between the first guiding portion 47 and the outer wall portion 46.

The inner wall portion 45 is formed to have a length that is accommodated between the covering member 23 and the flange-like member 25 with a proper gap in a state where the inner shroud 41 is maximally raised (FIG. 5). The intermediate wall portion 48 is formed to have a length between the second guide portion 52 and the treatment liquid separation wall 53 of the intermediate shroud 42 in a state in which the inner shroud 41 is closest to the middle shroud 42. The gap is accommodated.

The first guiding portion 47 has a smooth arc and draws an upper end portion 47b obliquely upward toward the center side (the side close to the axis CX of the substrate W). Further, between the inner wall portion 45 and the first guiding portion 47, a disposal tank 49 for collecting and discarding the used processing liquid is provided. An annular inner collecting groove 50 for collecting and collecting the used processing liquid is provided between the first guiding portion 47 and the middle wall portion 48. Further, between the intermediate wall portion 48 and the outer wall portion 46, an annular outer recovery groove 51 for collecting and collecting the treatment liquid of a type different from the inner recovery tank 50 is provided.

An exhaust liquid mechanism (not shown) is connected to the waste tank 49. The exhaust liquid mechanism discharges the treatment liquid collected in the waste tank 49, and forcibly exhausts the inside of the waste tank 49. The exhaust liquid mechanism is provided, for example, at equal intervals in the circumferential direction of the disposal tank 49. Further, a collection mechanism (not shown) is connected to the inner recovery tank 50 and the outer recovery tank 51, and the recovery mechanism is used to collect the treatment liquids collected in the inner recovery tank 50 and the outer recovery tank 51, respectively. It is recovered in a recovery tank provided outside the substrate processing apparatus 1. Further, the bottoms of the inner recovery tank 50 and the outer recovery tank 51 are inclined at a slight angle with respect to the horizontal direction, and a recovery mechanism is connected to the lowest position. Thereby, the treatment liquid that has flowed into the inner recovery tank 50 and the outer recovery tank 51 is smoothly recovered.

The middle shroud 42 surrounds the periphery of the rotating chuck 20 and has a shape that is substantially rotationally symmetrical with respect to the axis CX passing through the center of the substrate W held on the rotating chuck 20. The intermediate shroud 42 integrally includes a second guiding portion 52 and a cylindrical processing liquid separation wall 53 coupled to the second guiding portion 52.

The second guiding portion 52 includes, on the outer side of the first guiding portion 47 of the inner shroud 41, a lower end portion 52a formed in a cylindrical shape with the axis CX as an axis, and an upper end portion 52b from the upper end of the lower end portion 52a. A smooth arc is drawn and extends obliquely upward toward the center side (the side close to the axis CX of the substrate W), and the folded portion 52c is formed by folding the front end portion of the upper end portion 52b downward. The lower end portion 52a is housed in the inner collecting groove 50 with a proper gap between the first guiding portion 47 and the intermediate wall portion 48 in a state in which the inner shroud 41 is closest to the middle shroud 42. Further, the upper end portion 52b is provided so as to overlap the upper end portion 47b of the first guide portion 47 of the inner shroud 41 in the vertical direction, and in a state where the inner shroud 41 is closest to the middle shroud 42, relative to The upper end portion 47b of the first guiding portion 47 is kept close to each other with an extremely small interval. Further, the folded portion 52c formed by folding the front end of the upper end portion 52b downward is formed to have a length in which the folded portion 52c is horizontally aligned with the first guide in a state where the inner shroud 41 is closest to the middle shroud 42. The front end of the upper end 47b of the portion 47 overlaps.

In addition, the upper end portion 52b of the second guide portion 52 is formed to have a thickness that is thicker toward the lower side, and the treatment liquid separation wall 53 has a cylinder that is provided to extend downward from the outer peripheral edge portion of the lower end portion of the upper end portion 52b. shape. The treatment liquid separation wall 53 is housed in the outer recovery tank 51 with a proper gap between the inner wall portion 48 and the outer shroud 43 in a state in which the inner shroud 41 is closest to the middle shroud 42.

The outer shroud 43 is on the outer side of the second guiding portion 52 of the middle shroud 42 and surrounds the rotating chuck 20 It is surrounded and has a shape that is substantially rotationally symmetrical with respect to the axis CX passing through the center of the substrate W held on the spin chuck 20. The outer shroud 43 has a function as a third guiding portion. The outer shroud 43 includes a lower end portion 43a formed in a cylindrical shape with the axis CX as an axis, and an upper end portion 43b which draws a smooth circular arc from the upper end of the lower end portion 43a and is directed toward the center side (close to the axis of the substrate W) The direction of the core CX extends obliquely upward; and the folded portion 43c is formed by folding the front end portion of the upper end portion 43b downward.

The lower end portion 43a is in the state in which the inner shroud 41 and the outer shroud 43 are closest to each other, and is appropriately accommodated between the processing liquid separation wall 53 of the middle shroud 42 and the outer wall portion 46 of the inner shroud 41 to be accommodated on the outer side. Inside the recovery tank 51. Further, the upper end portion 43b is provided so as to overlap the second guide portion 52 of the center shroud 42 in the vertical direction, and is in the state in which the middle shroud 42 is closest to the outer shroud 43 with respect to the second guide. The upper end portion 52b of the portion 52 is kept close by a very small interval. Further, the folded portion 43c formed by folding the front end portion of the upper end portion 43b downward is formed in such a manner that the folded portion 43c is horizontally and the second guide in a state where the middle cover 42 and the outer shroud 43 are closest to each other. The folded-back portions 52c of the lead portions 52 overlap.

Further, the inner shroud 41, the middle shroud 42, and the outer shroud 43 are provided to be movable up and down independently of each other. In other words, each of the inner shroud 41, the middle shroud 42, and the outer shroud 43 is provided with an elevating mechanism (not shown), and can be independently raised and lowered. As such a lifting mechanism, for example, various mechanisms such as a ball screw mechanism or an air cylinder can be employed.

The partition plate 15 is disposed to surround the inner space of the upper and lower chambers 10 around the treatment shroud 40. The partition plate 15 may be a single plate-shaped member that surrounds the treatment shroud 40, or may be formed by joining a plurality of plate-like members. Further, a through hole or a slit penetrating in the thickness direction may be formed in the partition plate 15, and in the present embodiment, a through hole for passing the support shaft for supporting the upper surface treatment liquid nozzle is formed. 30 and nozzle bases 33, 63 of the two-fluid nozzle 60.

The outer peripheral end of the partition plate 15 is coupled to the side wall 11 of the chamber 10. Further, the edge portion of the partitioning plate 15 surrounding the processing shroud 40 is formed into a circular shape having a diameter larger than the outer diameter of the outer shroud 43. The way is formed. Therefore, the partitioning plate 15 does not become an obstacle to the lifting of the outer shroud 43.

Further, in a portion of the side wall 11 of the chamber 10, an exhaust pipe 18 is provided in the vicinity of the bottom wall 13. The exhaust pipe 18 is connected in communication to an exhaust mechanism (not shown). The air passing between the processing shroud 40 and the partitioning plate 15 supplied from the fan filtering unit 14 and flowing in the chamber 10 is discharged from the exhaust pipe 18 to the outside of the apparatus.

Further, the substrate processing apparatus 1 includes a control unit 9 that controls the processing apparatus main body DB composed of the above-described respective constituent elements. The hardware of the control unit 9 is constructed in the same manner as a normal computer. In other words, the control unit 9 is configured to include a CPU (Central Processing Unit) that performs various arithmetic processing, and a ROM (Disc-Read Only Memory) that reads the basic program. Special memory; RAM (Random Access Memory), which is a memory for reading and writing various information; and a disk, a software for pre-memory control and data.

In the memory unit (disk or the like) of the control unit 9, a plurality of substrate processing modes (setting steps) in the substrate processing apparatus 1 are set in advance, and the CPU of the control unit 9 executes a specific processing program to select the above. One of a plurality of substrate processing modes is executed (process execution step), thereby controlling each of the operation mechanisms of the substrate processing apparatus 1.

<1.2 Operation of Substrate Processing Apparatus 1>

Next, each operation mode (each mode) in the substrate processing apparatus 1 having the above configuration will be described.

The substrate processing apparatus 1 of the present embodiment includes a normal mode NM (FIG. 3) set to a preset mode among a plurality of modes, and a special mode RM (FIG. 7) which is exceptionally or temporarily selected when a specific condition is satisfied. The substrate processing apparatus 1 selects and executes one of the normal mode NM or the special mode RM for the substrate W sequentially transferred to the apparatus. In the control unit 9 of the substrate processing apparatus 1, a mode different from the above two modes is additionally added, and the additional mode may be selected. However, in the present embodiment, in particular, only the above two modes are set. Description.

<1.2.1 Normal mode NM>

Fig. 3 is a flow chart showing the procedure of the normal mode NM in the substrate processing apparatus 1 of the embodiment. Hereinafter, the normal mode NM will be described with reference to FIG. 3.

First, the substrate W to be processed is carried into the chamber 10 by a transport robot (not shown) (step ST1). The four chuck members 26 are driven to clamp the substrate W to the rotary chuck 20 (step ST2). By rotating the rotating shaft 24 by the rotation motor 22, the substrate W is rotated about the axis CX in the vertical direction passing through the center of the substrate W (step ST3).

Then, the nozzle arm 32 of the upper surface treatment liquid nozzle 30 is rotated, and the ejection head 31 is moved above the rotation base 21 (for example, above the axis CX), thereby rotating from the upper surface treatment liquid nozzle 30. The liquid medicine is supplied to the upper surface of the substrate W on which the chuck 20 is rotated. The chemical liquid supplied to the upper surface of the substrate W is diffused to the entire upper surface of the rotating substrate W by centrifugal force. Thereby, the chemical liquid processing of the substrate W is performed (step ST4). Then, the liquid medicine is scattered around the end portion of the substrate W which is rotated.

In order to recover the scattered chemical liquid, in step ST4, for example, only the outer shroud 43 is raised, and is formed between the upper end portion 43b of the outer shroud 43 and the upper end portion 52b of the second guide portion 52 of the middle shroud 42. An opening OPa (FIG. 4) surrounding the substrate W held on the spin chuck 20 is surrounded. As a result, the chemical liquid (indicated by a broken line arrow in FIG. 4) scattered from the edge portion of the rotating substrate W is blocked by the upper end portion 43b of the outer shroud 43 and flows down the inner surface of the outer shroud 43, thereby It is recycled to the outer recovery tank 51. After a certain period of time (or after supplying a certain amount of liquid medicine), the supply of the liquid medicine is stopped.

Then, pure water (washing liquid) is supplied from the upper surface treatment liquid nozzle 30 to the upper surface of the substrate W which is rotated by the rotary chuck 20. The pure water supplied to the upper surface of the substrate W is diffused to the entire upper surface of the rotating substrate W by centrifugal force. Thereby, the washing process of washing the chemical liquid remaining on the upper surface of the substrate W is performed (step ST5). Then, the end portion of the substrate W from which the pure water is rotated is scattered around.

In step ST5, for example, the inner shroud 41, the middle shroud 42, and the outer shroud 43 all rise, Thereby, the periphery of the substrate W held on the spin chuck 20 is surrounded by the first guide portion 47 of the inner shroud 41 (FIG. 5). As a result, the pure water (indicated by a broken line arrow in FIG. 5) scattered from the edge portion of the rotating substrate W is blocked by the inner shroud 41, and flows down the inner wall of the first guiding portion 47, and the self-depleting groove 49 discharge. Further, when the pure water is recovered by a route different from the chemical liquid, the middle shield 42 and the outer shroud 43 may be raised, and the upper end portion 52b of the second guide portion 52 of the middle shroud 42 may be An opening OPb (FIG. 6) surrounding the substrate W held by the spin chuck 20 is formed between the upper end portions 47b of the first guide portions 47 of the inner shroud 41. After a certain period of time (or after supplying a certain amount of pure water), the supply of pure water is stopped.

Then, step ST4 (unit first chemical liquid step) and step ST5 (unit first washing step) are alternately repeated (step ST6) before all the chemical liquid processing specified in the substrate processing recipe is executed. In the present specification, in the normal mode NM, the step ST4 in which the plurality of substrates W are continuously executed in plurality is referred to as a "unit first chemical liquid step", and the concept of a plurality of units of the first chemical liquid steps is referred to as " The first chemical liquid step". Similarly, in the normal mode NM, the step ST5 in which the plurality of substrates W are continuously executed in plurality is referred to as "unit first washing step", and the collective concept of the plurality of units of the first washing step is referred to as "the first washing step". "."

When the first chemical liquid step and the first washing step are completed, the drying process of the substrate W is performed (step ST7). When the drying process is performed, the inner shroud 41, the middle shroud 42 and the outer shroud 43 are all lowered, and the upper end portion 47b of the first guide portion 47 of the inner shroud 41 and the second guide portion 52 of the middle shroud 42 are closed. Either the upper end portion 52b and the upper end portion 43b of the outer shroud 43 are located below the substrate W held on the rotating chuck 20. In this state, the substrate W rotates at a high speed together with the spin chuck 20, and droplets (droplets or water droplets of the chemical liquid) adhering to the substrate W are removed by centrifugal force, and are dried.

Thereafter, the rotation of the substrate W is stopped (step ST8), the four chuck members 26 are driven, and the substrate W is released from the spin chuck 20 (step ST9), and the substrate W is carried out by a transport robot (not shown). It is outside the chamber 10 (step ST10).

As described above, in the normal mode NM, the treatment liquid (chemical liquid and washing liquid (pure water)) is supplied to the substrate W to be subjected to surface treatment. Most of the processing liquid scattered from the rotating substrate W is recovered and discharged by the processing shroud 40. However, there is a case where the processing liquid scattered on the processing shroud 40 is not discharged and adheres and remains.

As described above, when the treatment liquid adhering to the inside of the shroud is dried, particles or the like are generated and become a source of contamination for the substrate W to be processed. Therefore, in the substrate processing apparatus 1 of the present embodiment, the following special mode RM (FIG. 7) is performed, and the inside of the protective cover 40 is cleaned.

<1.2.2 Special mode RM>

The special mode RM is not only performing substrate processing on the substrate W in the same manner as the normal mode NM, but also performing a mode of processing the internal cleaning of the shield 40. The special mode RM is applied to an exception or temporary selection mode of the substrate to be processed shortly after the point in time when the condition is satisfied, when the specific condition is satisfied. This specific condition is set in advance in the control unit 9.

The criteria for satisfying the specific conditions include, for example, the following: (1) "number of slices", that is, the case where a specific number of substrates is processed in the normal mode NM, and (2) "time base", that is, in the normal mode In the case where the substrate processing apparatus 1 is operated for a specific time in the NM, and (3) the "probability cause generation criterion", the attachment is detected inside the processing shield 40 by, for example, a sensor (not shown), or When the environmental pollution of the processing space in the chamber 10 is detected, it is actually detected that a failure has occurred that continues to perform high-precision substrate processing.

In the "number of sheets" in the above, the special mode RM is periodically executed based on the number of substrates on which the chemical liquid processing (substrate cleaning) is performed. Further, in the "time base", the special mode RM is periodically executed on the basis of time. Therefore, in the standard The special mode RM is periodically executed when observing (number of slices or time).

On the other hand, in the "fault cause generation criterion", since the failure cause as described above is not limited to be generated periodically, the special mode RM is often executed non-periodically. However, in the case of either periodicity or non-periodity, the number of substrates cleaned by the special mode RM is relatively small compared to the number of substrates cleaned by the normal mode NM.

Fig. 7 is a flow chart showing the procedure of the special mode RM in the substrate processing apparatus 1 of the embodiment. As shown in FIG. 7, in the steps ST1 to ST3 and ST6 to ST10, since the special mode RM is also the same as the normal mode NM described above, the steps ST4A and ST5A which are the specific steps of the special mode RM will be described in detail below.

In the special mode RM, the step ST4A in which the plurality of substrates W are continuously executed is referred to as the "unit second chemical liquid step", and the collection concept of the plurality of units of the second chemical liquid step is referred to as "the first". 2 liquid steps." In addition, the step ST5A in which a plurality of substrates W are continuously executed is referred to as a "unit second washing step", and the concept of a plurality of units in the second washing step is referred to as a "second washing step".

The second chemical liquid step of the special mode RM is a step corresponding to the first chemical liquid step of the normal mode NM, and includes supplying the chemical solution to the substrate W that is kept rotating by the rotating chuck 20 to perform the chemical liquid processing on the substrate W. The second unit of the second chemical step.

The second washing step of the special mode RM is generally performed in a plurality of units of the second washing step including supplying the washing liquid (pure water) to the substrate W held by the rotating chuck 20 and performing the washing process on the substrate W. The first washing step of the mode NM is the same. On the other hand, at least one unit second washing step (hereinafter referred to as a shroud washing step) different from at least one unit of the first washing step of the plurality of unit first washing steps is included in the actuating condition, The second washing step is different from the first washing step described above.

Fig. 8 is an example of a timing chart of the shroud cleaning step. The shroud cleaning step is different from the second washing step of the other unit which is mainly used for the washing treatment of the substrate, and is washed by the substrate. The internal cleaning process of the polyester treatment and treatment shield 40 is the primary purpose step. In the following description, t0 to t9 indicate the elapsed time in the shroud cleaning step.

In the initial stage (the period from time t0 to time t3 shown in FIG. 8) in the shroud cleaning step, the inner shroud 41 and the middle shroud 42 are in a lowered state, and the outer shroud 43 is in a raised state. An annular opening portion OPa (FIG. 9) surrounding the substrate W held by the rotating chuck 20 is formed between the upper end portion 43b of the cover 43 and the upper end portion 52b of the second guiding portion 52 of the intermediate shroud 42.

During the period from time t0 to time t1, the rotation of the substrate by the spin chuck 20 is performed at a high speed (for example, 2400 rpm). Therefore, the pure water supplied from the upper surface treatment liquid nozzle 30 to the substrate W is scattered upward from the edge portion of the substrate W by the trajectory of the broken line arrow AR1 in FIG. Pure water that has been immersed in the inner wall of the upper end portion 43b of the outer shroud 43 (especially, near the axis CX) through the opening OPa flows down the inner wall and is discharged from the outer recovery tank 51 (Fig. 2). As a result, contaminants such as particles adhering to the inner wall of the outer shroud 43 (especially near the axis CX) are washed with pure water.

During the period from time t1 to time t2, the rotation of the substrate by the rotary chuck 20 is performed at a medium speed (for example, 1200 rpm). Therefore, the pure water supplied from the upper surface treatment liquid nozzle 30 to the substrate W is scattered in a substantially horizontal direction from the end edge portion of the substrate W by the trajectory of the broken line arrow AR2 in FIG. Pure water that has been immersed in the inner wall of the upper end portion 43b of the outer shroud 43 (especially at a position away from the axis CX) through the opening OPa flows down the inner wall and is discharged from the outer recovery tank 51 (Fig. 2). As a result, contaminants such as particles adhering to the inner wall of the outer shroud 43 (especially at a position away from the axis CX) are washed with pure water. Furthermore, since the position of the inner wall of the outer shroud 43 is particularly away from the axis CX, there is already a portion where pure water flows under the period from time t0 to time t1, so as shown in FIG. 8, time t1 to time The period of t2 is shorter than the period from time t0 to time t1, so that a sufficient shield cleaning effect can be obtained.

During the period from time t2 to time t3, the rotation of the substrate by the rotary chuck 20 is performed at a low speed (for example, 500 rpm). Therefore, the upper surface treatment liquid nozzle 30 is supplied onto the substrate W. The pure water is scattered downward from the end edge portion of the substrate W by the trajectory of the broken line arrow AR3 in Fig. 9 . The pure water that has been immersed in the upper end portion 52b of the second guide portion 52 of the intermediate shroud 42 through the opening OPa flows down the upper surface thereof and is discharged from the outer recovery tank 51 (Fig. 2). As a result, contaminants such as particles adhering to the upper end portion 52b of the second guiding portion 52 of the intermediate shroud 42 are flushed with pure water.

As such, the shroud cleaning step includes a speed adjustment sub-step of variably adjusting the rotational speed at which the substrate W is rotated. Then, by performing the speed adjustment sub-step, pure water is scattered through the opening OPa to a desired portion sandwiched between the outer shroud 43 and the middle shroud 42.

Further, in the intermediate stage (the period from time t3 to time t6) in the shroud cleaning step, the inner shroud 41 is in a lowered state, and the middle shroud 42 and the outer shroud 43 are in a raised state, and the second shroud 42 is in the second state. An opening OPb (FIG. 10) surrounding the substrate W held by the spin chuck 20 is formed between the upper end portion 52b of the guide portion 52 and the upper end portion 47b of the first guide portion 47 of the inner shroud 41.

In the period from time t3 to time t6, the speed adjustment sub-step is also executed in the same manner as the period from time t0 to time t3. As a result, in accordance with the high speed to the low speed of the rotation speed of the substrate W, the trajectory of the pure water passing through the opening OPb between the middle shroud 42 and the inner shroud 41 is the arrow AR4 to AR6 (Fig. 10), and is attached to the middle shroud. Contaminants such as particles on the inner surface of the second guiding portion 52 of the 42 and the upper surface of the first guiding portion 47 of the inner shroud 41 are flushed with pure water.

Further, in the final stage (the period from time t6 to time t8) in the shroud cleaning step, the inner shroud 41, the middle shroud 42, and the outer shroud 43 are all raised, and become the first guide of the inner shroud 41. The lead portion 47 surrounds the state of the substrate W held on the spin chuck 20 (FIG. 11).

In the period from the time t6 to the time t8, the speed adjustment sub-step is also executed in the same manner as the period from the time t0 to the time t2 and the period from the time t3 to the time t5. As a result, the trajectory of the pure water passing through the inner opening OPc of the inner shroud 41 is the arrow AR7 to AR8 (FIG. 11) corresponding to the high speed to the medium speed of the rotational speed of the substrate W, and is attached to the first inner shield 41. Contaminants such as particles on the inner wall of the guide portion 47 are washed with pure water. Furthermore, the reason why the low speed rotation of the substrate W is not performed in the final stage of the shroud cleaning step is that there is no inner side of the inner shroud 41 The cleaning object shield (corresponding to the shield 42 in the initial stage of the shroud cleaning step and the shroud of the inner shroud 41 in the intermediate stage).

As such, the shroud cleaning step includes a speed adjustment sub-step that variably adjusts a rotational speed at which the substrate W is rotated, and a portion adjustment sub-step that moves the processing shroud 40 up and down to adjust the pure water scattered from the substrate W Colliding to the portion of the treatment shroud 40. Further, by appropriately combining the sub-steps, the respective portions of the treatment shroud 40 can be cleaned with high precision (the pure water is scattered to the respective portions).

Returning to Fig. 7, a series of processes of the special mode RM will be described. When the substrate W to be processed is carried into the chamber 10 (step ST1), the substrate W is nipped on the rotary chuck 20 (step ST2), and the substrate W is wound around the axis CX by the rotary motor 22. Rotation (step ST3).

Then, the unit second chemical liquid step (step ST4A) and the unit second washing step (step ST5A) are alternately performed in accordance with the process recipe. At this time, at least one of the unit second washing steps (step ST5A) performs the above-described shroud washing step different from the unit first washing step (step ST5).

When the second chemical liquid step and the second washing step are completed, the drying process of the substrate W is performed (step ST7). Thereafter, the rotation of the substrate W is stopped (step ST8), the four chuck members 26 are driven to release the substrate W from the spin chuck 20 (step ST9), and the substrate W is carried out by a transport robot (not shown) to The chamber 10 is outside (step ST10). As described above, in the special mode RM, the washing liquid (pure water) for rinsing the chemical liquid on the substrate W is also used for the shroud cleaning.

<1.3 Effect of substrate processing apparatus 1>

Hereinafter, the effects of the substrate processing apparatus 1 of the present embodiment will be described.

In the special mode RM, since the above-described shroud cleaning step is performed by changing one of the normal modes NM, the cleaning process of the processing shroud 40 can be performed in addition to the substrate processing. Thereby, the pollution source attached to the inside of the shield can be effectively washed, thereby improving the substrate The yield of the processing device 1.

Further, the shroud washing step in the second washing step includes a speed adjusting sub-step and a position adjusting sub-step. Therefore, by appropriately combining and executing the sub-steps by the control unit 9, each part of the processing shroud 40 can be cleaned with high precision (the pure water is scattered to each part).

Further, in the special mode RM, as the shroud cleaning step, in the operation condition different from the normal mode NM (the length of the washing liquid supply time, the number of revolutions of the substrate W, the presence or absence of the up and down movement of the shield, etc.) The processing target substrate W supplies the washing liquid. However, as in the present embodiment, as long as the pure water is used as the washing liquid or the sufficiently diluted chemical liquid is used as the washing liquid, it is possible to prevent the above-described operating conditions from being different from the normal mode NM. The substrate W is adversely affected (the yield can be prevented from decreasing).

Further, the special mode RM is a mode that can be executed when the substrate W is placed in the chamber 10. In this way, since the time limit in the execution of the special mode RM is small, the requirement of cleaning the protective cover 40 is generated in the middle of the batch processing (in the shroud cleaning in the above-mentioned "cause of failure cause generation") Requirement, for example, when the sensor detects a contamination source attached to the processing shield 40, or when detecting environmental contamination in the chamber 10, etc., the batch processing that is not to be performed is completed. Special mode RM is available.

Further, the special mode RM of the present embodiment is executed in a state where the substrate W is mounted on the spin chuck 20. Therefore, in the case where the washing liquid (pure water) is supplied to the rotating rotating base as in Patent Document 1, the washing liquid is scattered, and the chuck in which the washing liquid collides with the rotating chuck to hold the substrate can be reduced. The concern of the mechanism (typically, the shape of the protrusion) allows the washing liquid to be suitably scattered to the cleaning target portion to which the chemical liquid is attached.

Further, each of the elements in the chamber 10 such as the rotary chuck 20, the processing shroud 40, and the upper surface treatment liquid nozzle 30 is originally used for surface treatment of the substrate W, and is not provided for cleaning other than the substrate W. In the present embodiment, since it is not necessary to provide a dedicated mechanism (cleaning jig, etc.) for cleaning the processing shroud 40, it is possible to select by using the mode of the control unit 9. Since the washing process of the processing shroud 40 is performed, it is possible to suppress an increase in size of the substrate processing apparatus 1.

Further, in particular, the rotational speed of the substrate W can be variably adjusted, and as shown in FIG. 9 and the like, the washing liquid is ejected and scattered while changing the number of revolutions during the cleaning of the inner wall of the shroud. In the aspect of scanning the inner wall of the shield, a wide range of cleaning of the inner wall of the shield can be achieved. Such a change in the number of revolutions can be staged as in the embodiment, or can be continuously changed over time.

<2 change example>

The embodiments of the present invention have been described above, but the present invention can be variously modified in addition to the above without departing from the spirit thereof. For example, in the above embodiment, the washing liquid used in the first washing step and the second washing step is pure water, but the liquid is not limited thereto, and a liquid obtained by diluting the chemical liquid with pure water may be used as the washing liquid. Further, the normal mode NM and the special mode RM described above are only one example of the processing mode, and for example, a mode in which the processing liquid is supplied from the lower surface treatment liquid nozzle 28 to the lower surface of the substrate W may be employed.

Fig. 12 and Fig. 13 are timing charts showing a modification of the shroud washing step of the above embodiment.

The shroud washing step may also include a supply amount adjusting substep of variably adjusting the supply amount of the washing liquid (pure water) supplied to the substrate W. For example, as shown in FIG. 12, the supply amount of pure water is increased during the period of high-speed rotation of the substrate (time t0 to time t1, time t3 to time t4, time t6 to time t7) to clean the processing shield. When the portion of the substrate 40 is close to the portion of the substrate W, the source of contamination (a source of contamination which is highly contaminated with the substrate W) adhering to the position of the substrate W in the processing shroud 40 can be effectively washed.

Further, in the sub-step of adjusting the portion in which the processing shroud 40 is moved up and down, the processing shroud 40 may be repeatedly moved up and down in the fixed upper and lower sections as shown in FIG. In the section where the reverse movement is performed up and down, the source of contamination can be efficiently washed over a wide range without dispersing the washing liquid (pure water) to the entire processing shroud 40. When the treatment cover 40 is moved up and down, it is effective to change the treatment cover 40 according to the upper and lower positions of the treatment cover 40. The speed of movement. For example, the processing shroud 40 is quickly raised and lowered at a position where the pollution source attached to the processing shroud 40 is small, and the processing shroud 40 is slowly raised and lowered at a position where the pollution source attached to the processing shroud 40 is large. Thereby, the shroud cleaning process can be performed efficiently.

Further, in the above embodiment, the upper surface treatment liquid nozzle 30 is used as the washing liquid supply nozzle for supplying the washing liquid to the upper surface of the substrate W. Alternatively, the washing liquid may be supplied from the two-fluid nozzle 60 to the spin base 21.

Further, in the above embodiment, the treatment shroud 40 includes the inner shroud 41, the middle shroud 42 and the outer shroud 43 which are vertically movable independently of each other, but may be integrally formed with three shrouds for lifting . In the case where three shrouds are integrally stacked in a plurality of stages in the height direction, the respective shrouds may be moved up and down so as to surround the holding surface 21a of the spin base 21 in order. Further, the processing shroud 40 may also include only one shroud that surrounds the rotating base 21.

In addition, the substrate to be processed by the substrate processing apparatus 1 is not limited to the semiconductor substrate, and may be various substrates such as a glass substrate for a flat panel display such as a liquid crystal display device.

Further, in the above embodiment, the first chemical liquid step includes a plurality of unit first chemical liquid steps in the normal mode NM, and the first washing step includes a plurality of units of the first washing step, but It is not limited to this. That is, the first chemical liquid step may include one unit of the first chemical liquid step, and the first washing step includes one unit of the first washing step (the liquid chemical treatment and the washing treatment are performed once each). The second chemical liquid step and the second washing step are also the same.

Further, in the above embodiment, the aspect in which the special mode RM includes the second chemical liquid step has been described, but the invention is not limited thereto. The special mode RM may include at least the second washing step (step ST5B), and may include the second chemical liquid step as shown in FIG. This aspect is an aspect in which the substrate W is not used as the final product, and has the advantage that since the second chemical liquid step is not performed, the time required is short, and the strong supply can be caused to the extent that the substrate W is damaged. Pure water, even from the viewpoint of substrate processing, is a substrate for use as a final product W Washing liquid that cannot be used can be used as long as it is effective for cleaning the shield. Therefore, it is particularly effective for the substrate W which cannot be used as a final product due to the influence of damage or the like in the step before being conveyed to the chamber 10.

Fig. 15 is a longitudinal sectional view of the substrate processing apparatus 1 in the case where liquid-tight cleaning is performed in the shroud cleaning step. As is clear from Fig. 9, in Fig. 15, the opening OPa formed between the upper end portion 43b of the outer shroud 43 and the upper end portion 52b of the second guiding portion 52 of the middle shroud 42 has a small upper and lower width. In this way, by narrowing the space between the shroud of the cleaning object (in FIG. 15, the gap between the outer shroud 43 and the middle shroud 42), the shroud is supplied with pure water which is scattered from the substrate W (Fig. The middle is indicated by a dotted arrow), so that the guard cleaning can be performed efficiently.

Although the substrate processing apparatus and the substrate processing method of the embodiment and its modifications have been described above, the examples of the preferred embodiments of the present invention are not intended to limit the scope of the present invention. The present invention can be freely combined with the respective embodiments within the scope of the invention, or any constituent elements of the respective embodiments may be changed, or any constituent elements may be omitted in the respective embodiments.

1‧‧‧Substrate processing unit

9‧‧‧Control Department

10‧‧‧ chamber

11‧‧‧ side wall

12‧‧‧ ceiling wall

13‧‧‧ bottom wall

14‧‧‧Fan filter unit

15‧‧‧ divider

18‧‧‧Exhaust pipe

20‧‧‧Rotating chuck

21‧‧‧Spinning base

21a‧‧‧ Keep face

22‧‧‧Rotary motor

23‧‧‧ Covering components

24‧‧‧Rotary axis

25‧‧‧Flange members

26‧‧‧ chuck member

28‧‧‧ Lower surface treatment liquid nozzle

30‧‧‧Upper surface treatment liquid nozzle

31‧‧‧Spray head

32‧‧‧Nozzle arm

40‧‧‧Handling shield

41‧‧‧ inner shield

42‧‧‧中护罩

43‧‧‧ outer shield

43a‧‧‧Bottom

43b‧‧‧Upper

43c‧‧‧Return

44‧‧‧ bottom

45‧‧‧Inside wall

46‧‧‧Outer wall

47‧‧‧1st guide

47b‧‧‧Upper end

48‧‧‧ Middle Wall

49‧‧‧Abandoned trough

50‧‧‧Inside recycling tank

51‧‧‧Outside recycling tank

52‧‧‧2nd Guide

52a‧‧‧Bottom

52b‧‧‧Upper end

52c‧‧‧Return

53‧‧‧ treatment liquid separation wall

CX‧‧‧ Axis

DB‧‧‧Processing device body

W‧‧‧Substrate

Claims (14)

A substrate processing apparatus characterized by sequentially processing a plurality of substrates belonging to the same batch, and comprising: a processing apparatus body comprising: a substrate holding device that holds the substrate; and a rotary driving device Rotating the substrate holding device; the chemical supply device supplies the chemical solution to the substrate held on the substrate holding device; and the cleaning liquid supply device supplies the cleaning liquid to the substrate held on the substrate holding device; a shield surrounding the periphery of the substrate holding device; a control device preset with a plurality of substrate processing modes, controlling the processing device body, selecting and executing one of the plurality of modes for each substrate; and sensing And detecting the cause of the failure in the processing of the substrate; and the plurality of modes include: (A) a normal mode, which is when the sensor does not detect the occurrence of the cause of the failure, a mode in which the first substrate of one of the batches is executed, comprising: a first chemical liquid step, one side of which is The substrate holding device holds and rotates the first substrate, and supplies a chemical solution to the first substrate, and chemically treats the first substrate; and a first washing step is performed by the substrate holding device Rotating the first substrate, supplying a cleaning liquid to the first substrate, and rinsing the chemical liquid from the first substrate; and (B) a special mode for detecting the failure by the sensor When the cause occurs, for one of the substrates belonging to the above batch, and the above is detected A mode in which the second substrate to be processed is to be processed after the occurrence of the cause of the failure, and includes a second chemical liquid step of supplying the chemical solution to the second substrate in accordance with an operating condition corresponding to the first chemical liquid step. Performing a chemical liquid treatment on the second substrate; and a second washing step of performing at least one of a portion adjusting substep, a speed adjusting substep, and a supply amount adjusting substep, according to an operating condition different from the first washing step While holding the second substrate and rotating the substrate by the substrate holding device, the cleaning liquid is supplied to the second substrate, and the second substrate is scattered by the second substrate while the chemical liquid is being washed from the second substrate. The washing liquid washes the shroud, and the position adjusting substep moves the shroud up and down to adjust a portion of the washing liquid that has scattered from the second substrate to collide with the shroud, and the speed adjusting substep is variable. Adjusting the rotational speed of the second substrate, the supply amount adjusting substep variably adjusting the supply of the washing liquid supplied to the second substrate the amount. The substrate processing apparatus according to claim 1, wherein the first chemical liquid step includes a plurality of unit first chemical liquid steps, and the first washing step includes a plurality of units first washing step, wherein the normal mode alternately executes the unit a chemical liquid step and a processing mode of the first washing step of the unit, wherein the second chemical liquid step includes a plurality of units of the second chemical liquid step, and the second washing step includes a plurality of units of the second washing step, wherein the special pattern is alternated Performing the processing mode of the unit second chemical liquid step and the unit second washing step, and executing the plurality of units and the second washing under different operating conditions corresponding to at least one of the plurality of unit first washing steps At least one of the steps. The substrate processing apparatus of claim 1, wherein The above second washing step of the above special mode includes the above-described site adjusting substep. The substrate processing apparatus of claim 3, wherein the speed at which the shield is moved up and down is changed according to the upper and lower positions of the shield. The substrate processing apparatus of claim 3, wherein the up and down movement of the shield is repeated in a fixed upper and lower sections. A substrate processing apparatus according to claim 1, wherein said second washing step of said special mode comprises said speed adjusting substep. A substrate processing apparatus according to claim 1, wherein said second washing step of said special mode comprises said supply amount adjusting substep. A substrate processing method is characterized in that: a substrate processing method for sequentially processing a plurality of substrates belonging to the same batch using a processing device body and a control device, wherein the processing device body includes a substrate holding device for holding the substrate, a rotary drive device for rotating the substrate holding device, a chemical supply device for supplying a chemical solution to the substrate held on the substrate holding device, a cleaning liquid supply device for supplying a cleaning liquid to the substrate held on the substrate holding device, and a shield surrounding the substrate holding device, the control device controlling the processing device body; and the substrate processing method includes: a setting step of presetting a plurality of modes in the control device; and a processing execution step, which is directed to Each of the plurality of substrates selects one of the plurality of modes in the control device and performs the same; and a detecting step of detecting a cause of the failure in the processing execution step; and the plurality of modes includes : (A) A normal mode, which is a mode executed for a first substrate belonging to one of the substrates of the batch, when the detection step does not detect the occurrence of the cause of the failure, and includes: a first chemical liquid step And the first substrate is held by the substrate holding device and rotated, and the first substrate is supplied with the chemical solution, and the first substrate is subjected to the chemical liquid treatment; and the first washing step is performed by the first washing step. The substrate holding device holds and rotates the first substrate, and supplies the cleaning liquid to the first substrate, and rinses the chemical liquid from the first substrate; and (B) the special mode is performed by the detecting step In the case where the cause of the above-mentioned failure is detected, the second substrate which is the substrate to be processed after the occurrence of the cause of the failure is detected, and includes the second chemical liquid. a step of supplying a chemical solution to the second substrate according to an operating condition corresponding to the first chemical liquid step, and performing a chemical liquid treatment on the second substrate; and performing a second washing step At least one of the bit adjustment substep, the speed adjustment substep, and the supply amount adjustment substep, while holding and rotating the second substrate by the substrate holding device, according to an operation condition different from the first cleaning step While supplying the cleaning liquid to the second substrate, the rinsing liquid is rinsing from the second substrate, and the shroud is cleaned by the washing liquid scattered from the second substrate, and the position adjusting sub-step is The cover moves up and down to adjust a portion of the cleaning liquid that has scattered from the second substrate to the cover, and the speed adjustment substep variably adjusts a rotation speed of the second substrate, and the supply amount adjustment substep is The supply amount of the washing liquid supplied onto the second substrate is adjusted to be changed. The substrate processing method of claim 8, wherein The first chemical liquid step includes a plurality of units of the first chemical liquid step, and the first washing step includes a plurality of units of the first washing step, wherein the normal mode alternately executes the unit first chemical liquid step and the unit first washing step In the processing mode of the step, the second chemical liquid step includes a plurality of units of the second chemical liquid step, and the second washing step includes a plurality of units of the second washing step, wherein the special mode alternately executes the unit second chemical liquid step and In the processing mode of the second washing step of the unit, at least one of the plurality of unit second washing steps is performed under an operating condition different from at least one of the plurality of units of the first washing step. The substrate processing method of claim 8, wherein the second washing step of the special mode comprises the above-described site adjusting substep. The substrate processing method according to claim 10, wherein the speed at which the shield is moved up and down is changed according to the upper and lower positions of the shield. The substrate processing method of claim 10, wherein the up and down movement of the shield is repeated over the fixed upper and lower sections. The substrate processing method of claim 8, wherein the second washing step of the special mode comprises the speed adjusting sub-step. The substrate processing method of claim 8, wherein the second washing step of the special mode comprises the supply amount adjusting sub-step.