TWI540334B - Agent for enhancing visible light quantity transmitting a light permeable substrate and method for producing a highly light permeable substrate - Google Patents
Agent for enhancing visible light quantity transmitting a light permeable substrate and method for producing a highly light permeable substrate Download PDFInfo
- Publication number
- TWI540334B TWI540334B TW098114523A TW98114523A TWI540334B TW I540334 B TWI540334 B TW I540334B TW 098114523 A TW098114523 A TW 098114523A TW 98114523 A TW98114523 A TW 98114523A TW I540334 B TWI540334 B TW I540334B
- Authority
- TW
- Taiwan
- Prior art keywords
- visible light
- substrate
- light
- transmitting substrate
- increasing agent
- Prior art date
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- 239000000758 substrate Substances 0.000 title claims description 166
- 239000003795 chemical substances by application Substances 0.000 title claims description 49
- 238000004519 manufacturing process Methods 0.000 title claims description 31
- 230000002708 enhancing effect Effects 0.000 title 1
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 claims description 144
- 230000001965 increasing effect Effects 0.000 claims description 63
- 229910052751 metal Inorganic materials 0.000 claims description 60
- 239000000126 substance Substances 0.000 claims description 59
- 239000002184 metal Substances 0.000 claims description 58
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 claims description 55
- 239000004020 conductor Substances 0.000 claims description 54
- 238000010438 heat treatment Methods 0.000 claims description 33
- 230000000149 penetrating effect Effects 0.000 claims description 32
- 238000000034 method Methods 0.000 claims description 22
- 239000004065 semiconductor Substances 0.000 claims description 22
- 239000002131 composite material Substances 0.000 claims description 18
- 150000002894 organic compounds Chemical class 0.000 claims description 18
- 229910000420 cerium oxide Inorganic materials 0.000 claims description 17
- BMMGVYCKOGBVEV-UHFFFAOYSA-N oxo(oxoceriooxy)cerium Chemical compound [Ce]=O.O=[Ce]=O BMMGVYCKOGBVEV-UHFFFAOYSA-N 0.000 claims description 17
- 239000011521 glass Substances 0.000 claims description 16
- 230000003287 optical effect Effects 0.000 claims description 14
- 235000000346 sugar Nutrition 0.000 claims description 13
- 229920005989 resin Polymers 0.000 claims description 10
- 239000011347 resin Substances 0.000 claims description 10
- 229920000620 organic polymer Polymers 0.000 claims description 9
- 150000005846 sugar alcohols Chemical class 0.000 claims description 9
- 239000004721 Polyphenylene oxide Substances 0.000 claims description 8
- 150000001450 anions Chemical class 0.000 claims description 8
- 150000001768 cations Chemical class 0.000 claims description 8
- 229920000570 polyether Polymers 0.000 claims description 8
- 230000035515 penetration Effects 0.000 claims description 6
- 150000002016 disaccharides Chemical class 0.000 claims description 5
- 150000002772 monosaccharides Chemical class 0.000 claims description 5
- 150000002291 germanium compounds Chemical class 0.000 claims description 4
- 239000010410 layer Substances 0.000 description 45
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- 150000001875 compounds Chemical class 0.000 description 42
- 238000011156 evaluation Methods 0.000 description 36
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 35
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 35
- -1 polyethylene Polymers 0.000 description 34
- 239000010936 titanium Substances 0.000 description 30
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 29
- 229910052746 lanthanum Inorganic materials 0.000 description 27
- 239000007788 liquid Substances 0.000 description 26
- FZLIPJUXYLNCLC-UHFFFAOYSA-N lanthanum atom Chemical compound [La] FZLIPJUXYLNCLC-UHFFFAOYSA-N 0.000 description 24
- 239000010949 copper Substances 0.000 description 22
- 239000000356 contaminant Substances 0.000 description 21
- 239000000203 mixture Substances 0.000 description 21
- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 description 20
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- 229910052719 titanium Inorganic materials 0.000 description 19
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 19
- 229910052684 Cerium Inorganic materials 0.000 description 18
- GWXLDORMOJMVQZ-UHFFFAOYSA-N cerium Chemical compound [Ce] GWXLDORMOJMVQZ-UHFFFAOYSA-N 0.000 description 18
- 239000006185 dispersion Substances 0.000 description 18
- 229910052709 silver Inorganic materials 0.000 description 18
- 229910052697 platinum Inorganic materials 0.000 description 17
- 239000011135 tin Substances 0.000 description 17
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 16
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 16
- 229910052802 copper Inorganic materials 0.000 description 16
- 239000004332 silver Substances 0.000 description 16
- 239000011701 zinc Substances 0.000 description 16
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 15
- 239000010931 gold Substances 0.000 description 15
- 229910052742 iron Inorganic materials 0.000 description 15
- 229910052718 tin Inorganic materials 0.000 description 15
- 238000002834 transmittance Methods 0.000 description 15
- 229910052726 zirconium Inorganic materials 0.000 description 15
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 14
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 description 14
- QCWXUUIWCKQGHC-UHFFFAOYSA-N Zirconium Chemical compound [Zr] QCWXUUIWCKQGHC-UHFFFAOYSA-N 0.000 description 14
- 239000002585 base Substances 0.000 description 14
- WPBNNNQJVZRUHP-UHFFFAOYSA-L manganese(2+);methyl n-[[2-(methoxycarbonylcarbamothioylamino)phenyl]carbamothioyl]carbamate;n-[2-(sulfidocarbothioylamino)ethyl]carbamodithioate Chemical compound [Mn+2].[S-]C(=S)NCCNC([S-])=S.COC(=O)NC(=S)NC1=CC=CC=C1NC(=S)NC(=O)OC WPBNNNQJVZRUHP-UHFFFAOYSA-L 0.000 description 14
- 229910052759 nickel Inorganic materials 0.000 description 14
- 229910052725 zinc Inorganic materials 0.000 description 14
- 229910052787 antimony Inorganic materials 0.000 description 13
- WATWJIUSRGPENY-UHFFFAOYSA-N antimony atom Chemical compound [Sb] WATWJIUSRGPENY-UHFFFAOYSA-N 0.000 description 13
- 239000011575 calcium Substances 0.000 description 13
- 229910052737 gold Inorganic materials 0.000 description 12
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 11
- OYPRJOBELJOOCE-UHFFFAOYSA-N Calcium Chemical compound [Ca] OYPRJOBELJOOCE-UHFFFAOYSA-N 0.000 description 11
- 229910052791 calcium Inorganic materials 0.000 description 11
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 11
- 230000001699 photocatalysis Effects 0.000 description 11
- LLZRNZOLAXHGLL-UHFFFAOYSA-J titanic acid Chemical compound O[Ti](O)(O)O LLZRNZOLAXHGLL-UHFFFAOYSA-J 0.000 description 11
- VSCWAEJMTAWNJL-UHFFFAOYSA-K aluminium trichloride Chemical compound Cl[Al](Cl)Cl VSCWAEJMTAWNJL-UHFFFAOYSA-K 0.000 description 10
- DAMJCWMGELCIMI-UHFFFAOYSA-N benzyl n-(2-oxopyrrolidin-3-yl)carbamate Chemical compound C=1C=CC=CC=1COC(=O)NC1CCNC1=O DAMJCWMGELCIMI-UHFFFAOYSA-N 0.000 description 10
- 238000005516 engineering process Methods 0.000 description 10
- 239000003344 environmental pollutant Substances 0.000 description 10
- PSCMQHVBLHHWTO-UHFFFAOYSA-K indium(iii) chloride Chemical class Cl[In](Cl)Cl PSCMQHVBLHHWTO-UHFFFAOYSA-K 0.000 description 10
- 231100000719 pollutant Toxicity 0.000 description 10
- JIAARYAFYJHUJI-UHFFFAOYSA-L zinc dichloride Chemical class [Cl-].[Cl-].[Zn+2] JIAARYAFYJHUJI-UHFFFAOYSA-L 0.000 description 10
- 229910052797 bismuth Inorganic materials 0.000 description 9
- 229910017052 cobalt Inorganic materials 0.000 description 9
- 239000010941 cobalt Substances 0.000 description 9
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 description 9
- XLYOFNOQVPJJNP-UHFFFAOYSA-M hydroxide Chemical compound [OH-] XLYOFNOQVPJJNP-UHFFFAOYSA-M 0.000 description 9
- 239000000463 material Substances 0.000 description 9
- 150000002739 metals Chemical class 0.000 description 9
- 239000010955 niobium Substances 0.000 description 9
- 229910052763 palladium Inorganic materials 0.000 description 9
- 229920002098 polyfluorene Polymers 0.000 description 9
- 229910052720 vanadium Inorganic materials 0.000 description 9
- GPPXJZIENCGNKB-UHFFFAOYSA-N vanadium Chemical compound [V]#[V] GPPXJZIENCGNKB-UHFFFAOYSA-N 0.000 description 9
- MHAJPDPJQMAIIY-UHFFFAOYSA-N Hydrogen peroxide Chemical compound OO MHAJPDPJQMAIIY-UHFFFAOYSA-N 0.000 description 8
- JCXGWMGPZLAOME-UHFFFAOYSA-N bismuth atom Chemical compound [Bi] JCXGWMGPZLAOME-UHFFFAOYSA-N 0.000 description 8
- 230000000052 comparative effect Effects 0.000 description 8
- 238000010586 diagram Methods 0.000 description 8
- 229910052758 niobium Inorganic materials 0.000 description 8
- SQGYOTSLMSWVJD-UHFFFAOYSA-N silver(1+) nitrate Chemical compound [Ag+].[O-]N(=O)=O SQGYOTSLMSWVJD-UHFFFAOYSA-N 0.000 description 8
- 239000004698 Polyethylene Substances 0.000 description 7
- KJTLSVCANCCWHF-UHFFFAOYSA-N Ruthenium Chemical compound [Ru] KJTLSVCANCCWHF-UHFFFAOYSA-N 0.000 description 7
- CZMRCDWAGMRECN-UGDNZRGBSA-N Sucrose Chemical compound O[C@H]1[C@H](O)[C@@H](CO)O[C@@]1(CO)O[C@@H]1[C@H](O)[C@@H](O)[C@H](O)[C@@H](CO)O1 CZMRCDWAGMRECN-UGDNZRGBSA-N 0.000 description 7
- 229930006000 Sucrose Natural products 0.000 description 7
- 238000000576 coating method Methods 0.000 description 7
- 230000007246 mechanism Effects 0.000 description 7
- GUCVJGMIXFAOAE-UHFFFAOYSA-N niobium atom Chemical compound [Nb] GUCVJGMIXFAOAE-UHFFFAOYSA-N 0.000 description 7
- 229920000573 polyethylene Polymers 0.000 description 7
- 229920001451 polypropylene glycol Polymers 0.000 description 7
- XJDNKRIXUMDJCW-UHFFFAOYSA-J titanium tetrachloride Chemical compound Cl[Ti](Cl)(Cl)Cl XJDNKRIXUMDJCW-UHFFFAOYSA-J 0.000 description 7
- OAKJQQAXSVQMHS-UHFFFAOYSA-N Hydrazine Chemical compound NN OAKJQQAXSVQMHS-UHFFFAOYSA-N 0.000 description 6
- BUGBHKTXTAQXES-UHFFFAOYSA-N Selenium Chemical compound [Se] BUGBHKTXTAQXES-UHFFFAOYSA-N 0.000 description 6
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 6
- 150000002500 ions Chemical class 0.000 description 6
- 229910052760 oxygen Inorganic materials 0.000 description 6
- 239000000843 powder Substances 0.000 description 6
- 230000002829 reductive effect Effects 0.000 description 6
- 229910052707 ruthenium Inorganic materials 0.000 description 6
- 229910052711 selenium Inorganic materials 0.000 description 6
- 239000011669 selenium Substances 0.000 description 6
- 238000004381 surface treatment Methods 0.000 description 6
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 5
- 229910021555 Chromium Chloride Inorganic materials 0.000 description 5
- 229910021577 Iron(II) chloride Inorganic materials 0.000 description 5
- 229910021578 Iron(III) chloride Inorganic materials 0.000 description 5
- 229910021380 Manganese Chloride Inorganic materials 0.000 description 5
- GLFNIEUTAYBVOC-UHFFFAOYSA-L Manganese chloride Chemical class Cl[Mn]Cl GLFNIEUTAYBVOC-UHFFFAOYSA-L 0.000 description 5
- 229910021586 Nickel(II) chloride Inorganic materials 0.000 description 5
- 229910021626 Tin(II) chloride Inorganic materials 0.000 description 5
- 229910021627 Tin(IV) chloride Inorganic materials 0.000 description 5
- YOUIDGQAIILFBW-UHFFFAOYSA-J Tungsten(IV) chloride Inorganic materials Cl[W](Cl)(Cl)Cl YOUIDGQAIILFBW-UHFFFAOYSA-J 0.000 description 5
- 230000009471 action Effects 0.000 description 5
- 229910021529 ammonia Inorganic materials 0.000 description 5
- VMPVEPPRYRXYNP-UHFFFAOYSA-I antimony(5+);pentachloride Chemical compound Cl[Sb](Cl)(Cl)(Cl)Cl VMPVEPPRYRXYNP-UHFFFAOYSA-I 0.000 description 5
- 239000012736 aqueous medium Substances 0.000 description 5
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 5
- 229920001400 block copolymer Polymers 0.000 description 5
- 238000006243 chemical reaction Methods 0.000 description 5
- 229910052804 chromium Inorganic materials 0.000 description 5
- 239000011651 chromium Substances 0.000 description 5
- QSWDMMVNRMROPK-UHFFFAOYSA-K chromium(3+) trichloride Chemical compound [Cl-].[Cl-].[Cl-].[Cr+3] QSWDMMVNRMROPK-UHFFFAOYSA-K 0.000 description 5
- ORTQZVOHEJQUHG-UHFFFAOYSA-L copper(II) chloride Chemical class Cl[Cu]Cl ORTQZVOHEJQUHG-UHFFFAOYSA-L 0.000 description 5
- 229960003280 cupric chloride Drugs 0.000 description 5
- UDJQAOMQLIIJIE-UHFFFAOYSA-L dichlorotungsten Chemical class Cl[W]Cl UDJQAOMQLIIJIE-UHFFFAOYSA-L 0.000 description 5
- 229960002089 ferrous chloride Drugs 0.000 description 5
- 229910052738 indium Inorganic materials 0.000 description 5
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 5
- NMCUIPGRVMDVDB-UHFFFAOYSA-L iron dichloride Chemical compound Cl[Fe]Cl NMCUIPGRVMDVDB-UHFFFAOYSA-L 0.000 description 5
- RBTARNINKXHZNM-UHFFFAOYSA-K iron trichloride Chemical compound Cl[Fe](Cl)Cl RBTARNINKXHZNM-UHFFFAOYSA-K 0.000 description 5
- 239000011565 manganese chloride Chemical class 0.000 description 5
- 235000002867 manganese chloride Nutrition 0.000 description 5
- 229940099607 manganese chloride Drugs 0.000 description 5
- QMMRZOWCJAIUJA-UHFFFAOYSA-L nickel dichloride Chemical compound Cl[Ni]Cl QMMRZOWCJAIUJA-UHFFFAOYSA-L 0.000 description 5
- 239000007800 oxidant agent Substances 0.000 description 5
- CMOAHYOGLLEOGO-UHFFFAOYSA-N oxozirconium;dihydrochloride Chemical class Cl.Cl.[Zr]=O CMOAHYOGLLEOGO-UHFFFAOYSA-N 0.000 description 5
- 239000001301 oxygen Substances 0.000 description 5
- 238000010248 power generation Methods 0.000 description 5
- BGRYSGVIVVUJHH-UHFFFAOYSA-N prop-2-ynyl propanoate Chemical class CCC(=O)OCC#C BGRYSGVIVVUJHH-UHFFFAOYSA-N 0.000 description 5
- LNBXMNQCXXEHFT-UHFFFAOYSA-N selenium tetrachloride Chemical class Cl[Se](Cl)(Cl)Cl LNBXMNQCXXEHFT-UHFFFAOYSA-N 0.000 description 5
- 235000011150 stannous chloride Nutrition 0.000 description 5
- AXZWODMDQAVCJE-UHFFFAOYSA-L tin(II) chloride (anhydrous) Chemical compound [Cl-].[Cl-].[Sn+2] AXZWODMDQAVCJE-UHFFFAOYSA-L 0.000 description 5
- HPGGPRDJHPYFRM-UHFFFAOYSA-J tin(iv) chloride Chemical compound Cl[Sn](Cl)(Cl)Cl HPGGPRDJHPYFRM-UHFFFAOYSA-J 0.000 description 5
- 239000004408 titanium dioxide Substances 0.000 description 5
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 5
- 229910052721 tungsten Inorganic materials 0.000 description 5
- 239000010937 tungsten Substances 0.000 description 5
- 239000011592 zinc chloride Chemical class 0.000 description 5
- 235000005074 zinc chloride Nutrition 0.000 description 5
- VHUUQVKOLVNVRT-UHFFFAOYSA-N Ammonium hydroxide Chemical compound [NH4+].[OH-] VHUUQVKOLVNVRT-UHFFFAOYSA-N 0.000 description 4
- VEXZGXHMUGYJMC-UHFFFAOYSA-M Chloride anion Chemical compound [Cl-] VEXZGXHMUGYJMC-UHFFFAOYSA-M 0.000 description 4
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 description 4
- QAOWNCQODCNURD-UHFFFAOYSA-N Sulfuric acid Chemical compound OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 description 4
- 229910052782 aluminium Inorganic materials 0.000 description 4
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 4
- 235000011114 ammonium hydroxide Nutrition 0.000 description 4
- AAQNGTNRWPXMPB-UHFFFAOYSA-N dipotassium;dioxido(dioxo)tungsten Chemical class [K+].[K+].[O-][W]([O-])(=O)=O AAQNGTNRWPXMPB-UHFFFAOYSA-N 0.000 description 4
- 239000010408 film Substances 0.000 description 4
- IGUXCTSQIGAGSV-UHFFFAOYSA-K indium(iii) hydroxide Chemical compound [OH-].[OH-].[OH-].[In+3] IGUXCTSQIGAGSV-UHFFFAOYSA-K 0.000 description 4
- 239000002609 medium Substances 0.000 description 4
- 150000003254 radicals Chemical class 0.000 description 4
- 229910001961 silver nitrate Inorganic materials 0.000 description 4
- 239000004094 surface-active agent Substances 0.000 description 4
- FBEIPJNQGITEBL-UHFFFAOYSA-J tetrachloroplatinum Chemical compound Cl[Pt](Cl)(Cl)Cl FBEIPJNQGITEBL-UHFFFAOYSA-J 0.000 description 4
- 150000003609 titanium compounds Chemical class 0.000 description 4
- 229910003803 Gold(III) chloride Inorganic materials 0.000 description 3
- KWYUFKZDYYNOTN-UHFFFAOYSA-M Potassium hydroxide Chemical compound [OH-].[K+] KWYUFKZDYYNOTN-UHFFFAOYSA-M 0.000 description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 3
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- 150000003863 ammonium salts Chemical class 0.000 description 3
- 239000010953 base metal Substances 0.000 description 3
- 230000015572 biosynthetic process Effects 0.000 description 3
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- DIOQZVSQGTUSAI-UHFFFAOYSA-N decane Chemical compound CCCCCCCCCC DIOQZVSQGTUSAI-UHFFFAOYSA-N 0.000 description 3
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- FDWREHZXQUYJFJ-UHFFFAOYSA-M gold monochloride Chemical compound [Cl-].[Au+] FDWREHZXQUYJFJ-UHFFFAOYSA-M 0.000 description 3
- RJHLTVSLYWWTEF-UHFFFAOYSA-K gold trichloride Chemical compound Cl[Au](Cl)Cl RJHLTVSLYWWTEF-UHFFFAOYSA-K 0.000 description 3
- 229940076131 gold trichloride Drugs 0.000 description 3
- 229910052741 iridium Inorganic materials 0.000 description 3
- GKOZUEZYRPOHIO-UHFFFAOYSA-N iridium atom Chemical compound [Ir] GKOZUEZYRPOHIO-UHFFFAOYSA-N 0.000 description 3
- 235000014413 iron hydroxide Nutrition 0.000 description 3
- NCNCGGDMXMBVIA-UHFFFAOYSA-L iron(ii) hydroxide Chemical compound [OH-].[OH-].[Fe+2] NCNCGGDMXMBVIA-UHFFFAOYSA-L 0.000 description 3
- HEBKCHPVOIAQTA-UHFFFAOYSA-N meso ribitol Natural products OCC(O)C(O)C(O)CO HEBKCHPVOIAQTA-UHFFFAOYSA-N 0.000 description 3
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- 238000001179 sorption measurement Methods 0.000 description 3
- 229920001187 thermosetting polymer Polymers 0.000 description 3
- CMPGARWFYBADJI-UHFFFAOYSA-L tungstic acid Chemical compound O[W](O)(=O)=O CMPGARWFYBADJI-UHFFFAOYSA-L 0.000 description 3
- 239000011882 ultra-fine particle Substances 0.000 description 3
- 239000011787 zinc oxide Substances 0.000 description 3
- AZQWKYJCGOJGHM-UHFFFAOYSA-N 1,4-benzoquinone Chemical compound O=C1C=CC(=O)C=C1 AZQWKYJCGOJGHM-UHFFFAOYSA-N 0.000 description 2
- 239000005995 Aluminium silicate Substances 0.000 description 2
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- UXVMQQNJUSDDNG-UHFFFAOYSA-L Calcium chloride Chemical compound [Cl-].[Cl-].[Ca+2] UXVMQQNJUSDDNG-UHFFFAOYSA-L 0.000 description 2
- UNXHWFMMPAWVPI-UHFFFAOYSA-N Erythritol Natural products OCC(O)C(O)CO UNXHWFMMPAWVPI-UHFFFAOYSA-N 0.000 description 2
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 2
- 229910003771 Gold(I) chloride Inorganic materials 0.000 description 2
- ISWSIDIOOBJBQZ-UHFFFAOYSA-N Phenol Chemical compound OC1=CC=CC=C1 ISWSIDIOOBJBQZ-UHFFFAOYSA-N 0.000 description 2
- 229920002845 Poly(methacrylic acid) Polymers 0.000 description 2
- 229920000265 Polyparaphenylene Polymers 0.000 description 2
- ZLMJMSJWJFRBEC-UHFFFAOYSA-N Potassium Chemical compound [K] ZLMJMSJWJFRBEC-UHFFFAOYSA-N 0.000 description 2
- ATUOYWHBWRKTHZ-UHFFFAOYSA-N Propane Chemical compound CCC ATUOYWHBWRKTHZ-UHFFFAOYSA-N 0.000 description 2
- 229910004298 SiO 2 Inorganic materials 0.000 description 2
- CDBYLPFSWZWCQE-UHFFFAOYSA-L Sodium Carbonate Chemical compound [Na+].[Na+].[O-]C([O-])=O CDBYLPFSWZWCQE-UHFFFAOYSA-L 0.000 description 2
- 229920002472 Starch Polymers 0.000 description 2
- 229920002978 Vinylon Polymers 0.000 description 2
- 229910007926 ZrCl Inorganic materials 0.000 description 2
- XECAHXYUAAWDEL-UHFFFAOYSA-N acrylonitrile butadiene styrene Chemical compound C=CC=C.C=CC#N.C=CC1=CC=CC=C1 XECAHXYUAAWDEL-UHFFFAOYSA-N 0.000 description 2
- 239000004676 acrylonitrile butadiene styrene Substances 0.000 description 2
- 125000000217 alkyl group Chemical group 0.000 description 2
- 239000000956 alloy Substances 0.000 description 2
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- WNROFYMDJYEPJX-UHFFFAOYSA-K aluminium hydroxide Chemical compound [OH-].[OH-].[OH-].[Al+3] WNROFYMDJYEPJX-UHFFFAOYSA-K 0.000 description 2
- 235000012211 aluminium silicate Nutrition 0.000 description 2
- 229910052788 barium Inorganic materials 0.000 description 2
- AYJRCSIUFZENHW-UHFFFAOYSA-L barium carbonate Chemical class [Ba+2].[O-]C([O-])=O AYJRCSIUFZENHW-UHFFFAOYSA-L 0.000 description 2
- 239000001110 calcium chloride Substances 0.000 description 2
- 229910001628 calcium chloride Inorganic materials 0.000 description 2
- 229960002713 calcium chloride Drugs 0.000 description 2
- AXCZMVOFGPJBDE-UHFFFAOYSA-L calcium dihydroxide Chemical compound [OH-].[OH-].[Ca+2] AXCZMVOFGPJBDE-UHFFFAOYSA-L 0.000 description 2
- 239000000920 calcium hydroxide Substances 0.000 description 2
- 229910001861 calcium hydroxide Inorganic materials 0.000 description 2
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Description
本發明係關於一種使透光性基體之穿透可見光量增大之穿透可見光量增加劑、及以利用該穿透可見光量增加劑進行表面處理為特徵的高透光性基體之製造方法、以及使穿透透光性基體之可見光量增加之方法。The present invention relates to a method for producing a highly transparent substrate characterized in that a visible light amount increasing agent for increasing the amount of visible light transmitted through a light-transmitting substrate and a surface treatment by using the visible light amount increasing agent. And a method of increasing the amount of visible light that penetrates the light-transmitting substrate.
自先前,為了提高具有穿透光之功能的光學元件之功能性,而要求提高該元件之透光性。例如於透鏡等光學元件中,使用透明度較高之玻璃作為基體,或者將用於降低反射率之有機高分子膜應用於基體表面。但是,使用高透明度之玻璃在經濟性方面存在問題,又,當使用有機高分子膜時,難以將非常薄之膜的厚度均勻地控制在不會影響透鏡等之光學特性的程度。又,對於太陽光發電用電池等光學構件、及各種影像裝置之發光元件等光學元件,其功能特性受穿透光量影響,需要提高透光性能,以可獲得更高之穿透光量,但增大穿透光量較為困難。Since the prior art, in order to improve the functionality of an optical element having a function of penetrating light, it is required to improve the light transmittance of the element. For example, in an optical element such as a lens, a glass having a higher transparency is used as a substrate, or an organic polymer film for reducing reflectance is applied to a surface of a substrate. However, the use of a glass having high transparency is problematic in terms of economy, and when an organic polymer film is used, it is difficult to uniformly control the thickness of a very thin film to such an extent that it does not affect the optical characteristics of a lens or the like. In addition, optical components such as solar cells for photovoltaic power generation and optical components such as light-emitting elements of various video devices have functional characteristics that are affected by the amount of transmitted light, and it is necessary to improve light transmission performance to obtain a higher amount of transmitted light, but increase It is more difficult to penetrate a large amount of light.
又,在日本專利特開昭50-70040號公報中,記載有為了降低反射率而對透鏡基體之表面進行蝕刻處理從而形成具有規定圖案的微細凹凸,但由於在蝕刻處理中利用雷射光干涉故而處理裝置會成為大規模,又,在透鏡基體上具有曲面之情形時,難以於該曲面上形成凹凸。又,該方法無法使穿透光量之增加量達到反射光之減少量以上。Japanese Patent Publication No. Sho-50-70040 discloses that the surface of the lens substrate is etched to reduce the reflectance to form fine irregularities having a predetermined pattern. However, the laser light interferes with the etching process. The processing apparatus becomes large-scale, and when there is a curved surface on the lens substrate, it is difficult to form irregularities on the curved surface. Moreover, this method cannot make the amount of increase in the amount of transmitted light more than the amount of decrease in reflected light.
[專利文獻1]日本專利特開昭50-70040號公報[Patent Document 1] Japanese Patent Laid-Open No. 50-70040
本發明係鑒於上述先前技術研究而成者,其目的在於藉由無論基體之材質及形狀如何均可使用之簡易方法,而使基體之可見光穿透量增大。The present invention has been made in view of the above prior art research, and its object is to increase the visible light penetration amount of the substrate by a simple method which can be used regardless of the material and shape of the substrate.
本發明之目的可藉由在透光性基體之表面形成包含有機矽化合物及無機矽化合物之層而實現。上述層可藉由將包含有機矽化合物及無機矽化合物的透光性基體之穿透可見光量增加劑塗佈在透光性基體上,並進行加熱處理或非加熱處理而形成。此處,所謂「加熱處理」,係指加熱至超過常溫(20~30℃,較好的是25℃)之溫度,亦包括於室外在太陽光下曝曬一定時間(例如有時達到50~100℃)。另一方面,所謂「非加熱處理」,係指於常溫下維持一定時間。The object of the present invention can be achieved by forming a layer containing an organic cerium compound and an inorganic cerium compound on the surface of a light-transmitting substrate. The layer can be formed by applying a visible light amount increasing agent of a light-transmitting substrate containing an organic cerium compound and an inorganic cerium compound to a light-transmitting substrate, followed by heat treatment or non-heat treatment. Here, the term "heating treatment" means heating to a temperature exceeding normal temperature (20 to 30 ° C, preferably 25 ° C), and also for outdoor exposure to sunlight for a certain period of time (for example, sometimes reaching 50 to 100). °C). On the other hand, "non-heating treatment" means maintaining a constant temperature at a normal temperature.
上述層及上述穿透可見光量增加劑較好的是包含氧化鈦。進而,上述氧化鈦較好的是摻雜金屬之氧化鈦。上述氧化鈦亦可為過氧化鈦。並且,上述基體較好的是其至少一部分為樹脂、金屬或者玻璃製。The above layer and the above-mentioned penetrating visible light amount increasing agent preferably contain titanium oxide. Further, the titanium oxide is preferably a metal-doped titanium oxide. The titanium oxide may also be titanium peroxide. Further, it is preferable that at least a part of the substrate is made of resin, metal or glass.
上述穿透可見光量增加劑較好的是包含熱分解性有機化合物。於此情形時,加熱處理較好的是在400℃以上之溫度下進行。The above-mentioned penetrating visible light amount increasing agent preferably contains a thermally decomposable organic compound. In this case, the heat treatment is preferably carried out at a temperature of 400 ° C or higher.
上述熱分解性有機化合物可為糖或糖醇,糖可為選自單糖類及二糖類所組成之群中之至少1種。另一方面,上述熱分解性有機化合物亦可為水溶性有機高分子。The thermally decomposable organic compound may be a sugar or a sugar alcohol, and the sugar may be at least one selected from the group consisting of a monosaccharide and a disaccharide. On the other hand, the above thermally decomposable organic compound may be a water-soluble organic polymer.
上述穿透可見光量增加劑可進而包含選自(1)陽離子、(2)具有正電荷之導電體或介電質、以及(3)具有正電荷之導電體及介電質或半導體之複合體所組成之群中之1種或2種以上的正電荷物質。The penetrating visible light amount increasing agent may further comprise a composite selected from the group consisting of (1) a cation, (2) a positively charged conductor or dielectric, and (3) a positively charged conductor and a dielectric or semiconductor. One or two or more positively charged substances in the group.
上述穿透可見光量增加劑可進而包含選自(4)陰離子、(5)具有負電荷之導電體或介電質、(6)具有負電荷之導電體及介電質或半導體之複合體、以及(7)具有光觸媒功能之物質所組成之群中之1種或2種以上的負電荷物質。The penetrating visible light amount increasing agent may further comprise a composite selected from the group consisting of (4) an anion, (5) a negatively charged conductor or dielectric, (6) a negatively charged conductor, and a dielectric or semiconductor, And (7) one or two or more kinds of negatively-charged substances in a group consisting of substances having a photocatalytic function.
上述穿透可見光量增加劑可進而同時包含上述正電荷物質及上述負電荷物質。The penetrating visible light amount increasing agent may further include the positively charged substance and the negatively charged substance described above.
再者,本發明中,所謂「光」,係指紫外線、可見光、紅外線等電磁波,此處所謂「可見光」,係指波長為380nm至780nm之電磁波。In the present invention, the term "light" means electromagnetic waves such as ultraviolet light, visible light, or infrared light. Here, "visible light" means electromagnetic waves having a wavelength of 380 nm to 780 nm.
根據本發明,無論基體之材質及形狀如何,均可藉由簡易之方法,使透光性基體之穿透可見光量增大。因此,根據本發明,可簡便且經濟地製造高透光性基體。由本發明所獲得之基體特別好的是用作需要光等電磁波之高穿透性的光學元件、光學構件。According to the present invention, the amount of visible light transmitted through the light-transmitting substrate can be increased by a simple method regardless of the material and shape of the substrate. Therefore, according to the present invention, a highly light-transmitting substrate can be produced simply and economically. The substrate obtained by the present invention is particularly preferably used as an optical element or an optical member which requires high penetration of electromagnetic waves such as light.
又,當將包含有機矽化合物及無機矽化合物,較好的是進而包含氧化鈦、特別是摻雜金屬之氧化鈦的穿透可見光量增加劑,塗佈在透光性基體上,並進行加熱處理或非加熱處理,而在透光性基體表面形成包含有機矽化合物及無機矽化合物(較好的是進而包含氧化鈦,特別是摻雜金屬之氧化鈦)之層時,於該穿透可見光量增加劑進而包含熱分解性有機化合物之情形時,加熱後上述層之表面形成微細之凹凸結構,而使表面積增大,光之飛散減少,因此可見光量進一步增大,透光性基體之反射率下降,進而可使透光性基體之穿透光量增大。Further, when an organic ruthenium compound and an inorganic ruthenium compound are contained, a visible light amount increasing agent further containing titanium oxide, particularly a metal-doped titanium oxide, is applied onto a light-transmitting substrate and heated. Treating or non-heating treatment, and forming a layer comprising an organic cerium compound and an inorganic cerium compound (preferably further comprising titanium oxide, particularly a metal-doped titanium oxide) on the surface of the light-transmitting substrate When the amount increasing agent further contains a thermally decomposable organic compound, a fine concavo-convex structure is formed on the surface of the layer after heating, and the surface area is increased, and the scattering of light is reduced, so that the amount of visible light is further increased, and the reflection of the translucent substrate is increased. The rate is decreased, which in turn increases the amount of light transmitted through the light-transmitting substrate.
並且,當上述穿透可見光量增加劑包含正電荷物質及/或負電荷物質之情形時,可防止透光性基體表面之污染,因此可長時間維持穿透光量之增大效果。Further, when the above-mentioned penetrating visible light amount increasing agent contains a positively-charged substance and/or a negatively-charged substance, contamination of the surface of the light-transmitting substrate can be prevented, so that the effect of increasing the amount of transmitted light can be maintained for a long period of time.
通常,若將基體對光之吸收除外,則通過透光性基體之光量為自入射至透光性基體之光量減去在被透光性基體表面所反射之光量而成者。換言之,如下式子成立:透光性基體之穿透光量=入射至透光性基體之入射光量-穿透性基體之反射光量。In general, when the absorption of light by the substrate is excluded, the amount of light passing through the light-transmitting substrate is obtained by subtracting the amount of light reflected on the surface of the light-transmitting substrate from the amount of light incident on the light-transmitting substrate. In other words, the following formula holds: the amount of transmitted light of the light-transmitting substrate = the amount of incident light incident on the light-transmitting substrate - the amount of reflected light of the penetrating substrate.
本發明者等人發現:藉由在透光性基體表面形成包含有機矽化合物與無機矽化合物之層,該透光性基體之穿透可見光量出乎預料地超過自入射至透光性基體之入射光量減去透光性基體之反射光量(及基體之吸收光量)而獲得者,從而完成本發明。又,若向上述層中調配氧化鈦,則穿透可見光量進一步增大,若使用摻雜金屬之氧化鈦作為上述氧化鈦,則穿透可見光量進一步增大。The present inventors have found that by forming a layer containing an organic cerium compound and an inorganic cerium compound on the surface of a light-transmitting substrate, the amount of visible light transmitted by the light-transmitting substrate unexpectedly exceeds that from the incident to the light-transmitting substrate. The amount of incident light is obtained by subtracting the amount of reflected light of the light-transmitting substrate (and the amount of absorbed light of the substrate), thereby completing the present invention. Further, when titanium oxide is added to the above layer, the amount of transmitted visible light is further increased, and when titanium oxide doped with metal is used as the titanium oxide, the amount of visible light transmitted is further increased.
即,藉由實施本發明,透光性基體之穿透可見光量會增大,而透光性基體之穿透可見光量>入射至透光性基體之入射可見光量-(穿透性基體之反射可見光量+基體之吸收光量)之關係成立。That is, by implementing the present invention, the amount of visible light transmitted through the light-transmitting substrate increases, and the amount of visible light transmitted through the light-transmitting substrate > the amount of incident visible light incident on the light-transmitting substrate - (reflection of the penetrating substrate) The relationship between the amount of visible light and the amount of absorbed light of the substrate is established.
透光性基體之穿透可見光量增大可認為是由於包含有機矽化合物及無機矽化合物之層,包含有機矽化合物、無機矽化合物以及氧化鈦之層,或者包含有機矽化合物、無機矽化合物以及摻雜金屬之氧化鈦的層本身會放射可見光。上述層放射可見光之原因認為是:上述層中之原子或分子因紫外線等可見光區域以外之電磁波而成為激發態,自激發態恢復至基態時會射出可見光。如上所述,被紫外線等短波長(能量更高之)電磁波激發之分子例如作為螢光而射出可見光等長波長(能量更低之)電磁波之原理已在例如衣料或製紙領域中所通用之螢光增白劑領域中確立。總之,本發明係利用包含有機矽化合物及無機矽化合物之層,包含有機矽化合物、無機矽化合物以及氧化鈦之層,或者包含有機矽化合物、無機矽化合物以及摻雜金屬之氧化鈦之層所參與之可見光放射現象者。再者,由於認為正電荷物質及/或負電荷物質會以某種形式有助於該可見光放射現象,故而較好的是包含正電荷物質或負電荷物質。The increase in the amount of visible light transmitted through the light-transmitting substrate is considered to be due to a layer containing an organic cerium compound and an inorganic cerium compound, a layer containing an organic cerium compound, an inorganic cerium compound, and titanium oxide, or an organic cerium compound, an inorganic cerium compound, and The layer of metal doped titanium oxide itself emits visible light. The reason why the above layer emits visible light is that the atoms or molecules in the layer are excited by electromagnetic waves other than the visible light region such as ultraviolet rays, and when the self-excited state returns to the ground state, visible light is emitted. As described above, a molecule excited by a short-wavelength (higher-energy) electromagnetic wave such as an ultraviolet ray, for example, as a fluorescent light, emits a long-wavelength (lower-energy) electromagnetic wave such as visible light, and has been used in, for example, the field of clothing or papermaking. Established in the field of optical brighteners. In summary, the present invention utilizes a layer comprising an organic cerium compound and an inorganic cerium compound, a layer comprising an organic cerium compound, an inorganic cerium compound and titanium oxide, or a layer comprising an organic cerium compound, an inorganic cerium compound, and a metal-doped titanium oxide layer. Those involved in the visible radiation phenomenon. Further, since it is considered that the positively-charged substance and/or the negatively-charged substance contribute to the visible light radiation phenomenon in some form, it is preferable to contain a positively-charged substance or a negatively-charged substance.
本發明中,藉由將包含(a)有機矽化合物及無機矽化合物、(b)有機矽化合物、無機矽化合物以及氧化鈦、或者(c)有機矽化合物、無機矽化合物以及摻雜金屬之氧化鈦之透光性基體的穿透可見光量增加劑塗佈在透光性基體上,並進行加熱處理或非加熱處理,而在透光性基體上形成包含有機矽化合物及無機矽化合物的層,包含有機矽化合物、無機矽化合物以及氧化鈦的層,或者包含有機矽化合物、無機矽化合物以及摻雜金屬之氧化鈦的層,使其穿透可見光量增大。即,本發明亦為使用上述穿透可見光量增加劑的高透光性基體之製造方法、或者使用上述穿透可見光量增加劑的透光性基體之穿透可見光量增加方法。In the present invention, by oxidizing (a) an organic cerium compound and an inorganic cerium compound, (b) an organic cerium compound, an inorganic cerium compound, and titanium oxide, or (c) an organic cerium compound, an inorganic cerium compound, and a doping metal. The penetrating visible light amount increasing agent of the titanium light-transmitting substrate is coated on the light-transmitting substrate, and is subjected to heat treatment or non-heat treatment to form a layer containing an organic germanium compound and an inorganic germanium compound on the light-transmitting substrate. A layer containing an organic cerium compound, an inorganic cerium compound, and titanium oxide, or a layer containing an organic cerium compound, an inorganic cerium compound, and a metal-doped titanium oxide, such that the amount of visible light transmitted increases. That is, the present invention is also a method for producing a highly light-transmitting substrate using the above-described light-transmitting amount increasing agent, or a method for increasing the amount of transmitted visible light using the light-transmitting substrate penetrating the visible light amount increasing agent.
作為根據本發明進行表面處理之基體,可使用各種透光性基體。作為基體之材質,並無特別限定,可使用親水性或疏水性之無機系基體及有機系基體、或者該等之組合。As the substrate to be surface-treated according to the present invention, various light-transmitting substrates can be used. The material of the substrate is not particularly limited, and a hydrophilic or hydrophobic inorganic substrate, an organic substrate, or a combination thereof may be used.
作為無機系基體,例如可舉出:鈉鈣玻璃、石英玻璃、耐熱玻璃等透明或半透明玻璃;或者包含氧化銦錫(ITO)等金屬氧化物之基體;以及矽或金屬等。又,作為有機系基體,例如可舉出包含塑膠之基體。若更具體地例示塑膠,則例如可舉出:聚乙烯、聚丙烯、聚碳酸酯、丙烯酸系樹脂、PET(Polyethylene Terephthalate,聚對苯二甲酸乙二酯)等聚酯;聚醯胺、ABS(Acrylonitrile-Butadiene-Styrene Terpolymers,丙烯腈-丁二烯-苯乙烯)樹脂、聚氯乙烯等熱塑性樹脂;以及聚胺基甲酸酯、三聚氰胺樹脂、脲樹脂、聚矽氧樹脂、氟樹脂、環氧樹脂等熱硬化性樹脂。就耐熱性方面而言,較好的是無機系基體,特別好的是至少一部分或較好的是全部為樹脂、金屬或者玻璃製之基體。再者,作為有機系基體之材質,較好的是熱硬化性樹脂。Examples of the inorganic substrate include transparent or translucent glass such as soda lime glass, quartz glass, and heat resistant glass; or a matrix containing a metal oxide such as indium tin oxide (ITO); and ruthenium or a metal. Moreover, as an organic base body, the base body containing a plastic is mentioned, for example. More specifically, examples of the plastic include polyesters such as polyethylene, polypropylene, polycarbonate, acrylic resin, and PET (polyethylene terephthalate); polyamines and ABS. (Acrylonitrile-Butadiene-Styrene Terpolymers, acrylonitrile-butadiene-styrene) resin, thermoplastic resin such as polyvinyl chloride; and polyurethane, melamine resin, urea resin, polyoxyl resin, fluororesin, ring A thermosetting resin such as an oxygen resin. In terms of heat resistance, an inorganic base is preferred, and it is particularly preferred that at least a part or preferably all of them are a base made of a resin, a metal or a glass. Further, as the material of the organic base, a thermosetting resin is preferred.
基體之形狀並無特別限定,可採用立方體、長方體、球形、紡錘形、片體形、膜形、纖維狀等任意形狀。基體表面亦可藉由電暈放電處理或紫外線照射處理等進行親水性化或疏水性化。基體表面亦可具備平面及/或曲面,又,亦可進行壓花加工,但較好的是具有平滑性。The shape of the substrate is not particularly limited, and any shape such as a cube, a rectangular parallelepiped, a sphere, a spindle, a sheet, a film, or a fiber may be used. The surface of the substrate may be rendered hydrophilic or hydrophobic by corona discharge treatment or ultraviolet irradiation treatment. The surface of the substrate may also have a flat surface and/or a curved surface, and may also be embossed, but it is preferably smooth.
本發明中所使用之穿透可見光量增加劑係至少包含有機矽化合物及無機矽化合物之液狀組成物。上述穿透可見光量增加劑較好的是進而包含氧化鈦、特別是摻雜金屬之氧化鈦。The penetrating visible light amount increasing agent used in the present invention contains at least a liquid composition of an organic cerium compound and an inorganic cerium compound. The above-mentioned penetrating visible light amount increasing agent preferably further contains titanium oxide, particularly a metal doped titanium oxide.
本發明中所使用之所謂氧化鈦,係指鈦之氧化物,例如可舉出TiO、TiO2、TiO3、TiO3/nH2O等各種一氧化鈦、二氧化鈦、過氧化鈦等,較好的是具有過氧基之過氧化鈦。又,較好的是氧化鈦為微粒子狀。氧化鈦可為非晶型,或者為非晶型、銳鈦礦型、板鈦礦型、金紅石型中之任意結晶形,但較好的是非晶型,特別好的是非晶型與銳鈦礦型之混合物。本發明中,作為氧化鈦,可使用市售之各種結晶型之氧化鈦之溶膠液。The term "titanium oxide" as used in the present invention means an oxide of titanium, and examples thereof include various titanium oxides such as TiO, TiO 2 , TiO 3 , TiO 3 /nH 2 O, titanium oxide, and titanium peroxide. It is a titanium peroxide having a peroxy group. Further, it is preferred that the titanium oxide be in the form of fine particles. The titanium oxide may be amorphous or amorphous in any of amorphous, anatase, brookite, and rutile, but is preferably amorphous, particularly preferably amorphous and anatase. a mixture of mineral types. In the present invention, as the titanium oxide, commercially available sol liquids of various crystal forms of titanium oxide can be used.
作為摻雜金屬之氧化鈦中所含之金屬,較好的是選自金、銀、鉑、銅、鋯、錳、鎳、鈷、錫、鐵、鋅、鍺、鉿、釔、鑭、鈰、鈀、釩、鈮、鈣以及鉭所組成之群中之金屬元素的至少1種。作為摻雜金屬之氧化鈦,可使用將市售之各種結晶型之氧化鈦之溶膠液與各種金屬之溶膠液混合而成者。The metal contained in the metal-doped titanium oxide is preferably selected from the group consisting of gold, silver, platinum, copper, zirconium, manganese, nickel, cobalt, tin, iron, zinc, lanthanum, cerium, lanthanum, cerium, lanthanum. At least one of the metal elements in the group consisting of palladium, vanadium, niobium, calcium, and barium. As the metal-doped titanium oxide, a commercially available sol solution of various crystal forms of titanium oxide and a sol liquid of various metals can be used.
作為摻雜金屬之氧化鈦,特別好的是摻雜金屬之過氧化鈦。作為摻雜金屬之過氧化鈦之製造方法,可採用以作為通常之二氧化鈦粉末之製造方法的鹽酸法或硫酸法為基礎的製造方法,亦可採用各種液體分散二氧化鈦溶液之製造方法。並且,上述金屬在任何製造階段均可與過氧化鈦進行複合化。As the metal-doped titanium oxide, a metal-doped titanium peroxide is particularly preferable. As a method for producing the metal-doped titanium peroxide, a production method based on a hydrochloric acid method or a sulfuric acid method which is a method for producing a normal titanium oxide powder can be employed, and a method for producing various liquid-dispersed titanium oxide solutions can also be employed. Further, the above metal can be combined with titanium peroxide at any stage of production.
本發明中所使用之過氧化鈦較好的是非晶型,特別好的是非晶型過氧化鈦與銳鈦礦型過氧化鈦之混合物。The titanium peroxide used in the present invention is preferably amorphous, and particularly preferably a mixture of amorphous titanium peroxide and anatase titanium peroxide.
作為上述摻雜金屬之過氧化鈦之製造方法,可採用以作為通常之二氧化鈦粉末之製造方法的鹽酸法或硫酸法為基礎的製造方法,亦可採用各種液體分散二氧化鈦溶液之製造方法。並且,上述金屬在任何製造階段均可與過氧化鈦進行複合化。As a method for producing the above-mentioned metal-doped titanium peroxide, a production method based on a hydrochloric acid method or a sulfuric acid method which is a method for producing a normal titanium oxide powder can be employed, and a method for producing various liquid-dispersed titanium oxide solutions can also be employed. Further, the above metal can be combined with titanium peroxide at any stage of production.
例如,作為上述摻雜金屬之過氧化鈦之具體製造方法,可舉出以下之第1~第3製造方法以及先前已知之溶膠-凝膠法。For example, as a specific production method of the above-described metal-doped titanium peroxide, the following first to third production methods and a previously known sol-gel method are exemplified.
首先,使四氯化鈦等四價鈦之化合物與氨等鹼基進行反應而生成氫氧化鈦。然後,以氧化劑將該氫氧化鈦過氧化,而形成超微細粒子之非晶型過氧化鈦。該反應較好的是於水介質中進行。進而,亦可藉由任意地進行加熱處理而轉化成銳鈦礦型過氧化鈦。在上述各步驟之任意步驟中,可混合金、銀、鉑、銅、鋯、錳、鎳、鈷、錫、鐵、鋅、鍺、鉿、釔、鑭、鈰、鈀、釩、鈮、鈣以及鉭、或者該等之化合物中的至少1種。First, a compound of tetravalent titanium such as titanium tetrachloride is reacted with a base such as ammonia to form titanium hydroxide. Then, the titanium hydroxide is peroxidized with an oxidizing agent to form ultrafine particles of amorphous titanium peroxide. This reaction is preferably carried out in an aqueous medium. Further, it may be converted into anatase-type titanium peroxide by heat treatment arbitrarily. In any of the above steps, gold, silver, platinum, copper, zirconium, manganese, nickel, cobalt, tin, iron, zinc, lanthanum, cerium, lanthanum, cerium, lanthanum, palladium, vanadium, niobium, calcium may be mixed. And at least one of hydrazine or such compounds.
過氧化用氧化劑並無特別限定,只要可形成鈦之過氧化物、即過氧化鈦,則可使用各種類者,但較好的是過氧化氫。當使用過氧化氫水作為氧化劑之情形時,過氧化氫之濃度並無特別限制,較好的是30~40%。較好的是在進行過氧化之前冷卻氫氧化鈦。此時之冷卻溫度較好的是1~5℃。The oxidizing agent for peroxidation is not particularly limited, and various types of peroxides, that is, titanium peroxide, which can form titanium peroxide, are preferred, but hydrogen peroxide is preferred. When hydrogen peroxide water is used as the oxidizing agent, the concentration of hydrogen peroxide is not particularly limited, and is preferably from 30 to 40%. It is preferred to cool the titanium hydroxide before performing the peroxidation. The cooling temperature at this time is preferably 1 to 5 °C.
將上述第1製造方法之一例示於圖1。圖示之製造方法中,在金、銀、鉑、銅、鋯、錳、鎳、鈷、鐵、錫、鋅、鍺、鉿、釔、鑭、鈰、鈀、釩、鈮、鈣以及鉭、或者該等之化合物中之至少1種的存在下混合四氯化鈦水溶液與氨水,而生成該金屬之氫氧化物及鈦之氫氧化物的混合物。此時之反應混合液之濃度及溫度並無特別限定,但較好的是較稀且為常溫。該反應為中和反應,較好的是將反應混合液之pH值最終調整為7左右。One example of the above first manufacturing method is shown in Fig. 1 . In the illustrated manufacturing method, gold, silver, platinum, copper, zirconium, manganese, nickel, cobalt, iron, tin, zinc, antimony, bismuth, antimony, bismuth, antimony, palladium, vanadium, antimony, calcium, and antimony, Alternatively, an aqueous titanium tetrachloride solution and aqueous ammonia are mixed in the presence of at least one of the compounds to form a mixture of the hydroxide of the metal and the hydroxide of titanium. The concentration and temperature of the reaction mixture at this time are not particularly limited, but it is preferably rare and normal temperature. The reaction is a neutralization reaction, and it is preferred to adjust the pH of the reaction mixture to about 7.
以純水清洗藉由上述方式所獲得之金屬及鈦之氫氧化物後,冷卻至5℃左右,然後以過氧化氫水將其過氧化。藉此,可製造包含摻雜有金屬的非晶型之具有過氧基的過氧化鈦微細粒子之水性分散液、即包含摻雜有金屬之過氧化鈦的水性分散液。The metal and titanium hydroxide obtained by the above method were washed with pure water, cooled to about 5 ° C, and then peroxidized with hydrogen peroxide water. Thereby, an aqueous dispersion containing the amorphous metal-doped perovskite fine particles doped with a metal, that is, an aqueous dispersion containing the metal-doped titanium peroxide can be produced.
利用氧化劑將四氯化鈦等四價鈦之化合物過氧化後,使其與氨等鹼基進行反應而形成超微細粒子之非晶型過氧化鈦。該反應較好的是在水介質中進行。進而,亦可藉由任意地進行加熱處理而轉化成銳鈦礦型過氧化鈦。上述各步驟之任意步驟中,可混合金、銀、鉑、銅、鋯、錳、鎳、鈷、錫、鐵、鋅、鍺、鉿、釔、鑭、鈰、鈀、釩、鈮、鈣以及鉭、或者該等之化合物中之至少1種。The compound of tetravalent titanium such as titanium tetrachloride is oxidized by an oxidizing agent, and then reacted with a base such as ammonia to form ultrafine particles of amorphous titanium peroxide. This reaction is preferably carried out in an aqueous medium. Further, it may be converted into anatase-type titanium peroxide by heat treatment arbitrarily. In any of the above steps, gold, silver, platinum, copper, zirconium, manganese, nickel, cobalt, tin, iron, zinc, lanthanum, cerium, lanthanum, cerium, lanthanum, palladium, vanadium, niobium, calcium, and the like may be mixed.钽, or at least one of the compounds.
使四氯化鈦等四價鈦之化合物與氧化劑及鹼基同時進行反應,同時進行氫氧化鈦之形成與其過氧化,而形成超微細粒子之非晶型過氧化鈦。該反應較好的是在水介質中進行。進而,亦可藉由任意地進行加熱處理而轉化成銳鈦礦型過氧化鈦。上述各步驟之任意步驟中,可混合金、銀、鉑、銅、鋯、錳、鎳、鈷、錫、鐵、鋅、鍺、鉿、釔、鑭、鈰、鈀、釩、鈮、鈣以及鉭、或者該等之化合物中之至少1種。A compound of tetravalent titanium such as titanium tetrachloride is reacted with an oxidizing agent and a base at the same time, and titanium hydroxide is formed and peroxidized to form ultrafine particles of amorphous titanium peroxide. This reaction is preferably carried out in an aqueous medium. Further, it may be converted into anatase-type titanium peroxide by heat treatment arbitrarily. In any of the above steps, gold, silver, platinum, copper, zirconium, manganese, nickel, cobalt, tin, iron, zinc, lanthanum, cerium, lanthanum, cerium, lanthanum, palladium, vanadium, niobium, calcium, and the like may be mixed.钽, or at least one of the compounds.
再者,在第1至第3製造方法中,非晶型過氧化鈦與對其進行加熱而獲得之銳鈦礦型過氧化鈦之混合物當然可用作摻雜金屬之過氧化鈦。Further, in the first to third production methods, a mixture of amorphous titanium peroxide and anatase-type titanium peroxide obtained by heating it can be used as a metal-doped titanium peroxide.
向烷氧化鈦中混合水、醇等溶劑、酸或鹼基觸媒並進行攪拌,使烷氧化鈦水解而生成超微粒子之過氧化鈦之溶膠溶液。可在該水解前後之任意時刻,混合金、銀、鉑、銅、鋯、錳、鎳、鈷、錫、鐵、鋅、鍺、鉿、釔、鑭、鈰、鈀、釩、鈮、鈣以及鉭、或者該等之化合物中之至少1種。再者,藉由上述方式所獲得之過氧化鈦係具有過氧基之非晶型。A solvent such as water or an alcohol, an acid or a base catalyst is mixed with the titanium alkoxide, and the alkoxide is hydrolyzed to form a superfine sol solution of titanium peroxide. Gold, silver, platinum, copper, zirconium, manganese, nickel, cobalt, tin, iron, zinc, lanthanum, cerium, lanthanum, cerium, lanthanum, palladium, vanadium, niobium, calcium, and the like may be mixed at any time before and after the hydrolysis.钽, or at least one of the compounds. Further, the titanium peroxide obtained by the above method is an amorphous type having a peroxy group.
作為上述烷氧化鈦,較好的是通式:Ti(OR')4(其中,R'為烷基)所表示之化合物、或者上述通式中之1個或2個烷氧基(OR')被羧基或β-二羰基所取代之化合物、或者該等之混合物。The above titanium alkoxide is preferably a compound represented by the formula: Ti(OR') 4 (wherein R' is an alkyl group), or one or two alkoxy groups in the above formula (OR' a compound substituted with a carboxyl group or a β-dicarbonyl group, or a mixture thereof.
作為上述烷氧化鈦之具體例,可舉出:Ti(O-isoC3H7)4、Ti(O-nC4H9)4、Ti(O-CH2CH(C2H5)C4H9)4、Ti(O-C17H35)4、Ti(O-isoC3H7)2[CO(CH3)CHCOCH3]2、Ti(O-nC4H9)2[OC2H4N(C2H4OH)2]2、Ti(OH)2[OCH(CH3)COOH]2、Ti(OCH2CH(C2H5)CH(OH)C3H7)4、Ti(O-nC4H9)2(OCOC17H35)等。Specific examples of the aforementioned titanium alkoxide include: Ti (O-isoC 3 H 7) 4, Ti (O-nC 4 H 9) 4, Ti (O-CH 2 CH (C 2 H 5) C 4 H 9 ) 4 , Ti(OC 17 H 35 ) 4 , Ti(O-isoC 3 H 7 ) 2 [CO(CH 3 )CHCOCH 3 ] 2 , Ti(O-nC 4 H 9 ) 2 [OC 2 H 4 N(C 2 H 4 OH) 2 ] 2 , Ti(OH) 2 [OCH(CH 3 )COOH] 2 , Ti(OCH 2 CH(C 2 H 5 )CH(OH)C 3 H 7 ) 4 , Ti (O-nC 4 H 9 ) 2 (OCOC 17 H 35 ) and the like.
作為製造摻雜金屬之過氧化鈦時所使用之四價鈦之化合物,只要與鹼基反應時可形成亦稱為正鈦酸(H4TiO4)之氫氧化鈦,則可使用各種鈦化合物,例如有:四氯化鈦、硫酸鈦、硝酸鈦、磷酸鈦等鈦之水溶性無機酸鹽。此外,亦可使用草酸鈦等鈦之水溶性有機酸鹽。再者,該等各種鈦化合物中,就水溶性特別優異且鈦以外之成分不會殘留在摻雜金屬之過氧化鈦之分散液中方面而言,較好的是四氯化鈦。As a compound of tetravalent titanium used in the production of a metal-doped titanium peroxide, various titanium compounds can be used as long as a titanium hydroxide which is also called orthotitanic acid (H 4 TiO 4 ) can be formed upon reaction with a base. For example, there may be a water-soluble inorganic acid salt of titanium such as titanium tetrachloride, titanium sulfate, titanium nitrate or titanium phosphate. Further, a water-soluble organic acid salt of titanium such as titanium oxalate can also be used. Further, among these various titanium compounds, titanium tetrachloride is preferred because it is particularly excellent in water solubility and the components other than titanium do not remain in the dispersion of the metal-doped titanium peroxide.
又,當使用四價鈦之化合物之溶液之情形時,該溶液之濃度只在可形成氫氧化鈦之凝膠的範圍內,則並無特別限制,但較好的是相對較稀之溶液。具體而言,四價鈦之化合物的溶液濃度較好的是5~0.01重量%,更好的是0.9~0.3重量%。Further, when a solution of a compound of tetravalent titanium is used, the concentration of the solution is only in the range of a gel capable of forming titanium hydroxide, and is not particularly limited, but a relatively dilute solution is preferred. Specifically, the solution concentration of the tetravalent titanium compound is preferably from 5 to 0.01% by weight, more preferably from 0.9 to 0.3% by weight.
與上述四價鈦之化合物反應之鹼基,只要可與四價鈦之化合物進行反應而形成氫氧化鈦,則可使用各種,其中可例示:氨、苛性鈉、碳酸鈉、苛性鉀等,較好的是氨。The base which reacts with the above-mentioned compound of tetravalent titanium may be used as long as it can react with a compound of tetravalent titanium to form titanium hydroxide, and examples thereof include ammonia, caustic soda, sodium carbonate, caustic potash, etc. Good is ammonia.
又,當使用上述鹼基之溶液之情形時,該溶液之濃度只要在可形成氫氧化鈦之凝膠的範圍內,則並無特別限制,較好的是相對較稀之溶液。具體而言,鹼基溶液之濃度較好的是10~0.01重量%,更好的是1.0~0.1重量%。特別是當使用氨水作為鹼基溶液之情形時的氨濃度較好的是10~0.01重量%,更好的是1.0~0.1重量%。Further, when the solution of the above base is used, the concentration of the solution is not particularly limited as long as it is within the range of the gel capable of forming titanium hydroxide, and a relatively thin solution is preferred. Specifically, the concentration of the base solution is preferably from 10 to 0.01% by weight, more preferably from 1.0 to 0.1% by weight. Particularly, when ammonia water is used as the base solution, the ammonia concentration is preferably from 10 to 0.01% by weight, more preferably from 1.0 to 0.1% by weight.
作為源自金、銀、鉑、銅、鋯、錳、鎳、鈷、錫、鐵、鋅、鍺、鉿、釔、鑭、鈰、鈀,釩、鈮、鈣以及鉭之化合物,可分別例示以下者:As compounds derived from gold, silver, platinum, copper, zirconium, manganese, nickel, cobalt, tin, iron, zinc, lanthanum, cerium, lanthanum, cerium, lanthanum, palladium, vanadium, cerium, calcium and cerium, they can be respectively exemplified The following:
Au化合物:AuCl、AuCl3、AuOH、Au(OH)2、Au2O、Au2O3 Au compound: AuCl, AuCl 3 , AuOH, Au(OH) 2 , Au 2 O, Au 2 O 3
Ag化合物:AgNO3、AgF、AgClO3、AgOH、Ag(NH3)OH、Ag2SO4 Ag compound: AgNO 3 , AgF, AgClO 3 , AgOH, Ag(NH 3 )OH, Ag 2 SO 4
Pt化合物:PtCl2、PtO、Pt(NH3)Cl2、PtO2、PtCl4、[Pt(OH)6]2 - Pt compounds: PtCl 2 , PtO, Pt(NH 3 )Cl 2 , PtO 2 , PtCl 4 , [Pt(OH) 6 ] 2 -
Ni化合物:Ni(OH)2、NiCl2 Ni compound: Ni(OH) 2 , NiCl 2
Co化合物:Co(OH)NO3、Co(OH)2、CoSO4、COCl2 Co compound: Co(OH)NO 3 , Co(OH) 2 , CoSO 4 , COCl 2
Cu化合物:Cu(OH)2、Cu(NO3)2、CuSO4、CuCl2、Cu(CH3COO)2 Cu compound: Cu(OH) 2 , Cu(NO 3 ) 2 , CuSO 4 , CuCl 2 , Cu(CH 3 COO) 2
Zr化合物:Zr(OH)3、ZrCl2、ZrCl4 Zr compound: Zr(OH) 3 , ZrCl 2 , ZrCl 4
Mn化合物:MnNO3、MnSO4、MnCl2 Mn compound: MnNO 3 , MnSO 4 , MnCl 2
Sn化合物:SnCl2、SnCl4、[Sn(OH)]+ Sn compound: SnCl 2, SnCl 4, [ Sn (OH)] +
Fe化合物:Fe(OH)2、Fe(OH)3、FeCl3 Fe compound: Fe(OH) 2 , Fe(OH) 3 , FeCl 3
Zn化合物:Zn(NO3)2、ZnSO4、ZnCl2 Zn compound: Zn(NO 3 ) 2 , ZnSO 4 , ZnCl 2
Ge化合物:GeO、Ge(OH)2、GeCl2、GeH4、GeFe、GeCl4 Ge compound: GeO, Ge(OH) 2 , GeCl 2 , GeH 4 , GeFe, GeCl 4
Hf化合物:HfCl2、HfO2、Hf(OH)3 +、HfCl4 Hf compounds: HfCl 2 , HfO 2 , Hf(OH) 3 + , HfCl 4
Y化合物:Y2O3、Y(OH)3、YCl3 Y compound: Y 2 O 3 , Y(OH) 3 , YCl 3
La化合物:La2O3、LaCl3、La(OH)3 La compound: La 2 O 3 , LaCl 3 , La(OH) 3
Ce化合物:CeO3、Ce(OH)3、CeCl3 Ce compound: CeO 3 , Ce(OH) 3 , CeCl 3
Pd化合物:[Pd(H2O)4]2+、PdCl2、PdO2 Pd compound: [Pd(H 2 O) 4 ] 2+ , PdCl 2 , PdO 2
V化合物:VCl2、VCl4、VOSO4 V compound: VCl 2 , VCl 4 , VOSO 4
Nb化合物:NbO2、NbF4、NbCl4 Nb compound: NbO 2 , NbF 4 , NbCl 4
Ca化合物:Ca(OH)2、CaCl2、CaSO4 Ca compound: Ca(OH) 2 , CaCl 2 , CaSO 4
Ta化合物:TaF3、TaCl3、TaCl4、TaO2 Ta compound: TaF 3 , TaCl 3 , TaCl 4 , TaO 2
藉由第1至第3製造方法所獲得之水性分散液中之過氧化鈦濃度(包括共存之源自金、銀、鉑、銅、鋯、錳、鎳、鈷、錫、鐵、鋅、鍺、鉿、釔、鑭、鈰、鈀、釩、鈮、鈣以及鉭者在內之總量)較好的是0.05~15重量%,更好的是0.1~5重量%。又,本發明中,源自金、銀、鉑、銅、鋯、錳、鎳、鈷、錫、鐵、鋅、鍺、鉿、釔、鑭、鈰、鈀、釩、鈮、鈣以及鉭者之調配量,以鈦與金屬成分之莫耳比計,理想的是1:1,就水性分散液之穩定性而言,較好的是1:0.01~1:0.5,更好的是1:0.03~1:0.1。The concentration of titanium peroxide in the aqueous dispersion obtained by the first to third manufacturing methods (including the coexistence of gold, silver, platinum, copper, zirconium, manganese, nickel, cobalt, tin, iron, zinc, lanthanum The total amount of ruthenium, osmium, iridium, osmium, palladium, vanadium, niobium, calcium and niobium is preferably from 0.05 to 15% by weight, more preferably from 0.1 to 5% by weight. Further, in the present invention, it is derived from gold, silver, platinum, copper, zirconium, manganese, nickel, cobalt, tin, iron, zinc, lanthanum, cerium, lanthanum, cerium, lanthanum, palladium, vanadium, cerium, calcium, and lanthanum. The blending amount is preferably 1:1 in terms of the molar ratio of titanium to the metal component, and in terms of the stability of the aqueous dispersion, it is preferably 1:0.01 to 1:0.5, more preferably 1: 0.03~1:0.1.
作為市售之過氧化鈦,例如可舉出:非晶型過氧化鈦水分散液SP185、摻雜二氧化矽之非晶型過氧化鈦水分散液SPS185、摻雜銅及鋯之二氧化鈦水分散液Z18-1000 Super A、摻雜銀之二氧化鈦水分散液SP-10(Sustainable Titania Technology(股))。Examples of commercially available titanium peroxide include amorphous amorphous titanium peroxide aqueous dispersion SP185, cerium-doped amorphous titanium peroxide aqueous dispersion SPS185, and copper and zirconium-doped titanium dioxide aqueous dispersion. Liquid Z18-1000 Super A, silver-doped titanium dioxide aqueous dispersion SP-10 (Sustainable Titania Technology).
本發明中所使用之穿透可見光量增加劑較好的是含有藉由上述方式所獲得之摻雜金屬之非晶型過氧化鈦,並且含有銳鈦礦型過氧化鈦。作為銳鈦礦型過氧化鈦,可為非晶型過氧化鈦藉由加熱(典型的是於後述之透光性基體表面塗佈後)轉化而成者,但較好的是並非由非晶型過氧化鈦藉由加熱轉化而成者的銳鈦礦型過氧化鈦。即,穿透可見光量增加劑中所含之銳鈦礦型過氧化鈦亦可為非晶型過氧化鈦之一部分藉由加熱進行轉化而以原位(in-situ)形成者,但較好的是該銳鈦礦型過氧化鈦之至少一部分(較好的是全部)係自外部另外添加者。The penetrating visible light amount increasing agent used in the present invention preferably contains the metal-doped amorphous titanium peroxide obtained by the above method and contains anatase-type titanium peroxide. As the anatase type titanium peroxide, the amorphous titanium peroxide can be converted by heating (typically after coating the surface of the light-transmitting substrate described later), but it is preferably not amorphous. The type of perovskite is converted into anatase type titanium peroxide by heating. That is, the anatase-type titanium peroxide contained in the visible light amount increasing agent may be formed by in-situ formation of a part of the amorphous titanium peroxide by heating, but preferably It is that at least a portion (preferably all) of the anatase type titanium peroxide is additionally added from the outside.
上述穿透可見光量增加劑中所含之過氧化鈦的濃度,可根據基體之表面處理程度而進行適當變更,典型的是0.01~90重量%,較好的是0.1~50重量%,更好的是1~20重量%。The concentration of the titanium peroxide contained in the visible light amount increasing agent can be appropriately changed depending on the degree of surface treatment of the substrate, and is typically 0.01 to 90% by weight, preferably 0.1 to 50% by weight, more preferably It is 1 to 20% by weight.
上述穿透可見光量增加劑在用於耐熱性無機系基體或熱硬化性樹脂製基體之情形時,較好的是含有熱分解性有機化合物。熱分解性有機化合物只要為藉由加熱而分解之有機化合物,則並無特別限定,較好的是藉由加熱進行分解而放出CO2等氣體者。加熱溫度較好的是300℃以上,更好的是400℃以上,更好的是450℃以上。作為分解性有機化合物,例如可舉出糖或糖醇、水溶性有機高分子以及該等之混合物,較好的是糖或糖醇,更好的是糖。When the penetrating visible light amount increasing agent is used for a heat resistant inorganic substrate or a thermosetting resin substrate, it is preferred to contain a thermally decomposable organic compound. The thermally decomposable organic compound is not particularly limited as long as it is an organic compound which is decomposed by heating, and it is preferred to decompose by heating to release a gas such as CO 2 . The heating temperature is preferably 300 ° C or higher, more preferably 400 ° C or higher, more preferably 450 ° C or higher. The decomposable organic compound may, for example, be a sugar or a sugar alcohol, a water-soluble organic polymer or a mixture thereof, and is preferably a sugar or a sugar alcohol, more preferably a sugar.
此處,所謂「糖」,係指具有多個羥基與羰基之碳水化合物,可舉出單糖類、二糖類、低聚糖類、多糖類等。作為單糖類,可舉出葡萄糖、果糖、半乳糖、甘露糖、核糖、赤藻糖等。作為二糖類,可舉出麥芽糖、乳糖、蔗糖等。作為低聚糖類,可舉出低聚果糖、低聚半乳糖等。作為多糖類,可舉出澱粉、纖維素、果膠等。該等可單獨使用,亦可為混合物。就使用性之觀點而言,作為糖,較好的是高水溶性者。因此,本發明中,可較好地使用選自單糖類及二糖類所組成之群中之1種或2種以上的混合物。Here, the term "sugar" means a carbohydrate having a plurality of hydroxyl groups and a carbonyl group, and examples thereof include monosaccharides, disaccharides, oligosaccharides, and polysaccharides. Examples of the monosaccharide include glucose, fructose, galactose, mannose, ribose, and erythrodose. Examples of the disaccharide include maltose, lactose, and sucrose. Examples of the oligosaccharides include oligofructose and galactooligosaccharide. Examples of the polysaccharide include starch, cellulose, pectin and the like. These may be used singly or as a mixture. From the viewpoint of usability, as the sugar, those having high water solubility are preferred. Therefore, in the present invention, one or a mixture of two or more selected from the group consisting of monosaccharides and disaccharides can be preferably used.
所謂「糖醇」,係指糖之羰基被還原者。作為糖醇,具體可舉出:赤藻糖醇、蘇糖醇、阿拉伯糖醇、木糖醇、核糖醇、甘露醇、山梨糖醇、麥芽糖醇、肌醇等。該等可單獨使用,亦可以兩種以上之混合物之形式使用。The term "sugar alcohol" refers to the reduction of the carbonyl group of a sugar. Specific examples of the sugar alcohol include erythritol, threitol, arabitol, xylitol, ribitol, mannitol, sorbitol, maltitol, inositol, and the like. These may be used singly or in the form of a mixture of two or more.
作為「水溶性有機高分子」,只要為水溶性,則可使用任意之熱分解性有機高分子,可舉出:聚乙二醇、聚丙二醇、聚乙二醇-聚丙二醇嵌段共聚物等聚醚;聚乙烯醇;聚丙烯酸(包括鹼基金屬鹽、銨鹽等鹽)、聚甲基丙烯酸(包括鹼基金屬鹽、銨鹽等鹽)、聚丙烯酸-聚甲基丙烯酸(包括鹼基金屬鹽、銨鹽等鹽)共聚物;聚丙烯醯胺;聚乙烯吡咯啶酮等。As the "water-soluble organic polymer", any thermally decomposable organic polymer can be used as long as it is water-soluble, and examples thereof include polyethylene glycol, polypropylene glycol, polyethylene glycol-polypropylene glycol block copolymer, and the like. Polyether; polyvinyl alcohol; polyacrylic acid (including base metal salts, ammonium salts, etc.), polymethacrylic acid (including base metal salts, ammonium salts, etc.), polyacrylic acid-polymethacrylic acid (including bases) a salt of a metal salt, an ammonium salt or the like; a polypropylene decylamine; a polyvinylpyrrolidone or the like.
上述水溶性有機高分子可單獨使用,亦可作為糖或糖醇之溶解助劑而發揮作用,因此可與糖或糖醇一併調配。藉此可使糖或糖醇良好地溶解於穿透可見光量增加劑中。The water-soluble organic polymer may be used singly or as a solubilizing aid for sugars or sugar alcohols, and thus may be formulated together with a sugar or a sugar alcohol. Thereby, the sugar or sugar alcohol can be well dissolved in the penetrating visible light amount increasing agent.
熱分解性有機化合物包含於上述穿透可見光量增加劑中之情形時的濃度,可根據基體之表面處理程度進行適當變更,典型的是0.01~20重量%,較好的是0.05~15重量%,更好的是0.1~10重量%。The concentration at which the thermally decomposable organic compound is contained in the above-mentioned visible light amount increasing agent can be appropriately changed depending on the degree of surface treatment of the substrate, and is typically 0.01 to 20% by weight, preferably 0.05 to 15% by weight. More preferably, it is 0.1 to 10% by weight.
作為上述有機矽化合物,例如可舉出各種有機矽烷化合物、及聚矽氧油、聚矽氧橡膠以及聚矽氧樹脂等聚矽氧。該等可單獨使用,亦可為混合物。作為聚矽氧,較好的是分子中具有矽酸烷基酯結構或聚醚結構者、或者具有矽酸烷基酯結構及聚醚結構之兩方者。此處,所謂矽酸烷基酯結構,係指烷基鍵結在矽氧烷骨架之矽原子上的結構。另一方面,所謂聚醚結構,係指具有醚鍵之結構,具體可舉出:聚環氧乙烷、聚環氧丙烷、聚氧雜環戊烷、聚環氧乙烷-聚環氧丙烷嵌段共聚物、聚乙烯-聚1,4-丁二醇共聚物、聚1,4-丁二醇-聚環氧丙烷共聚物等分子結構,但並不限定於該等。其中,聚環氧乙烷-聚環氧丙烷嵌段共聚物,就可根據其嵌段度及分子量而控制基體表面之潤濕性的觀點而言較好。Examples of the organic ruthenium compound include various organic decane compounds, and polyfluorene oxides such as polyasoxylated oils, polyoxygenated rubbers, and polyfluorene oxide resins. These may be used singly or as a mixture. As the polyfluorene oxide, those having a decanoic acid alkyl ester structure or a polyether structure in the molecule or having both an alkyl phthalate structure and a polyether structure are preferred. Here, the structure of the alkyl phthalate structure means a structure in which an alkyl group is bonded to a ruthenium atom of a ruthenium skeleton. On the other hand, the term "polyether structure" means a structure having an ether bond, and specific examples thereof include polyethylene oxide, polypropylene oxide, polyoxolane, and polyethylene oxide-polypropylene oxide. The molecular structure such as a block copolymer, a polyethylene-polytetramethylene glycol copolymer, or a polytetramethylene glycol-polypropylene oxide copolymer is not limited thereto. Among them, the polyethylene oxide-polypropylene oxide block copolymer is preferred from the viewpoint of controlling the wettability of the surface of the substrate in accordance with the degree of blockiness and molecular weight thereof.
作為有機矽化合物,特別好的是分子中具有矽酸烷基酯結構及聚醚結構兩者之聚矽氧。具體而言,較好的是聚醚改質聚二甲基矽氧烷等聚醚改質矽氧。其可藉由公知之方法來製造,例如可藉由日本專利特開平4-242499號公報之合成例1、2、3、4,或者日本專利特開平9-165318號公報之參考例中所記載之方法等來製造。特別好的是使兩末端甲基烯丙基聚環氧乙烷-聚環氧丙烷嵌段共聚物與二氫化聚二甲基矽氧烷進行反應而獲得之聚環氧乙烷-聚環氧丙烷嵌段共聚物改質聚二甲基矽氧烷。具體而言,可使用TSF4445、TSF4446(GE Toshiba Silicone(股)),KP系列(信越化學工業(股)),以及SH200、SH3746M、DC3PA、ST869A(Dow Corning Toray(股))等。As the organic cerium compound, particularly preferred is a polyfluorene oxide having both an alkyl phthalate structure and a polyether structure in the molecule. Specifically, it is preferred that the polyether modified polydimethyl methoxyoxane or the like is modified with oxime. It can be produced by a known method, for example, in the synthesis examples 1, 2, 3, and 4 of the Japanese Patent Laid-Open No. Hei-4-242499, or the reference examples of the Japanese Patent Laid-Open Publication No. Hei 9-165318. The method and the like are manufactured. Particularly preferred is a polyethylene oxide-polyepoxy obtained by reacting a two-terminal methallyl polyethylene oxide-polypropylene oxide block copolymer with a dihydrogenated polydimethyloxane. The propane block copolymer is modified with polydimethyl siloxane. Specifically, TSF4445, TSF4446 (GE Toshiba Silicone), KP series (Shin-Etsu Chemical Co., Ltd.), and SH200, SH3746M, DC3PA, ST869A (Dow Corning Toray), and the like can be used.
上述穿透可見光量增加劑中之有機矽化合物的濃度,可根據基體之表面處理程度進行適當變更,典型的是0.01~5.0重量%,較好的是0.05~2.0重量%,更好的是0.1~1.0重量%。The concentration of the organic cerium compound in the above-mentioned visible light amount increasing agent can be appropriately changed depending on the degree of surface treatment of the substrate, and is typically 0.01 to 5.0% by weight, preferably 0.05 to 2.0% by weight, more preferably 0.1. ~1.0% by weight.
作為無機矽化合物,可舉出氧化矽(二氧化矽)、氮化矽、碳化矽、矽烷等,較好的是氧化矽。作為氧化矽,可使用燻矽、膠質氧化矽、沈澱氧化矽等,較好的是膠質氧化矽。作為市售之膠質氧化矽,例如可使用PL-1、PL-3(扶桑化學工業(股));作為聚矽酸鹽,可使用WM-12(多摩化學工業(股)製造)、Silicasol 51(COLCOAT(股)製造)等。Examples of the inorganic cerium compound include cerium oxide (cerium oxide), cerium nitride, cerium carbide, decane, and the like, and cerium oxide is preferred. As the cerium oxide, sputum, colloidal cerium oxide, precipitated cerium oxide or the like can be used, and colloidal cerium oxide is preferred. As a commercially available colloidal cerium oxide, for example, PL-1, PL-3 (Fuso Chemical Industry Co., Ltd.) can be used; as the polyphthalate, WM-12 (manufactured by Tama Chemical Industry Co., Ltd.), Silicasol 51 can be used. (Manufactured by COLCOAT).
上述穿透可見光量增加劑中之無機矽化合物的濃度,可根據基體之表面處理程度進行適當變更,典型的是0.01~98重量%,較好的是0.1~90重量%,更好的是10.0~80重量%。The concentration of the inorganic cerium compound in the above-mentioned visible light amount increasing agent can be appropriately changed depending on the degree of surface treatment of the substrate, and is typically 0.01 to 98% by weight, preferably 0.1 to 90% by weight, more preferably 10.0. ~80% by weight.
上述穿透可見光量增加劑較好的是含有:水、醇或該等之混合物即水介質,或者有機溶劑等非水介質。就熱分解性有機化合物之溶解性方面而言,本發明之穿透可見光量增加劑較好的是含有水介質。該等介質之濃度典型的是50~99.9重量%,較好的是60~99重量%,更好的是70~97重量%。The above-mentioned penetrating visible light amount increasing agent preferably contains water, an alcohol or a mixture of the same, that is, an aqueous medium, or a nonaqueous medium such as an organic solvent. The penetrating visible light amount increasing agent of the present invention preferably contains an aqueous medium in terms of solubility of the thermally decomposable organic compound. The concentration of the medium is typically from 50 to 99.9% by weight, preferably from 60 to 99% by weight, more preferably from 70 to 97% by weight.
上述穿透可見光量增加劑係塗佈在透光基體之表面,而接受非加熱處理或加熱處理。藉此,在透光性基體表面形成包含有機矽化合物及無機矽化合物之層,而使透光性基體之可見光穿透量增大。穿透可見光量增加劑之塗佈裝置及塗佈方法並無特別限定,可使用任意之裝置及方法,例如可使用浸漬法、噴霧法、輥塗法、旋塗法、發泡膠塗佈法等任意之塗佈方法。The above-mentioned penetrating visible light amount increasing agent is coated on the surface of the light-transmitting substrate to receive a non-heating treatment or a heat treatment. Thereby, a layer containing an organic cerium compound and an inorganic cerium compound is formed on the surface of the light-transmitting substrate, and the amount of visible light transmittance of the light-transmitting substrate is increased. The coating device and the coating method for penetrating the visible light amount increasing agent are not particularly limited, and any apparatus and method can be used. For example, a dipping method, a spray method, a roll coating method, a spin coating method, or a styrofoam coating method can be used. Any arbitrary coating method.
加熱時之溫度並無特別限定,例如可加熱至30℃以上之任意溫度。當含有分解性有機物之情形時,更好的是300℃以上,更好的是400℃以上,更好的是450℃以上。加熱溫度之上限並無特別限定,但就對基體之各種特性的影響方面而言,較好的是1000℃以下,更好的是850℃以下,更好的是800℃以下。加熱時間只要可充分進行熱分解性有機化合物之碳化,則並無特別限定,較好的是1分鐘至3小時,更好的是1分鐘至1小時,更好的是1分鐘至30分鐘。The temperature at the time of heating is not particularly limited, and for example, it can be heated to any temperature of 30 ° C or higher. When it contains a decomposable organic substance, it is more preferably 300 ° C or more, more preferably 400 ° C or more, and more preferably 450 ° C or more. The upper limit of the heating temperature is not particularly limited, but is preferably 1000 ° C or less, more preferably 850 ° C or less, and still more preferably 800 ° C or less in terms of influence on various properties of the substrate. The heating time is not particularly limited as long as the carbonization of the thermally decomposable organic compound can be sufficiently carried out, and is preferably from 1 minute to 3 hours, more preferably from 1 minute to 1 hour, still more preferably from 1 minute to 30 minutes.
當穿透可見光量增加劑中含有過氧化鈦之情形時,藉由加熱,該過氧化鈦會轉化為氧化鈦(二氧化鈦)。此時,非晶型氧化鈦進一步轉化成銳鈦礦型氧化鈦(通常,非晶型氧化鈦係藉由在100℃下加熱2小時以上而轉化成銳鈦礦型)。因此,當穿透可見光量增加劑中含有非晶型過氧化鈦之情形時,藉由非晶型過氧化鈦→非晶型氧化鈦→銳鈦礦型氧化鈦之製程而獲得之銳鈦礦型氧化鈦存在於基體表面。進而,當上述穿透可見光量增加劑中已含有銳鈦礦型過氧化鈦之情形時,藉由加熱,該銳鈦礦型過氧化鈦會直接轉化為銳鈦礦型氧化鈦。When titanium oxide is contained in the visible light amount increasing agent, the titanium oxide is converted into titanium oxide (titanium dioxide) by heating. At this time, the amorphous titanium oxide is further converted into anatase type titanium oxide (generally, the amorphous titanium oxide is converted into an anatase type by heating at 100 ° C for 2 hours or more). Therefore, when the transparent visible light amount increasing agent contains amorphous titanium peroxide, the anatase obtained by the process of amorphous titanium peroxide → amorphous titanium oxide → anatase titanium oxide The type of titanium oxide is present on the surface of the substrate. Further, when the above-mentioned penetrating visible light amount increasing agent already contains anatase type titanium peroxide, the anatase type titanium peroxide is directly converted into anatase type titanium oxide by heating.
當上述穿透可見光量增加劑含有熱分解性有機化合物之情形時,藉由噴出源自穿透可見光量增加劑中之熱分解性有機化合物的分解物(碳酸氣體等),可在經加熱處理之基體表面形成表面上具有多個微細凹凸的多孔質層。藉由該微細之凹凸可降低基體表面之反射率,結果基體之透光率進一步提昇。關於上述多孔質層之平均層厚,只要可提昇基體之穿透率,則並無特別限定,較好的是0.1至3μm,更好的是0.5至1μm,更好的是0.1至0.5μm,更好的是0.05至0.3μm(50~300nm),更好的是80~250nm,更好的是130~250nm,特別好的是130~180nm。When the above-mentioned penetrating visible light amount increasing agent contains a thermally decomposable organic compound, it can be heat-treated by ejecting a decomposition product (carbonic acid gas or the like) derived from a thermally decomposable organic compound that penetrates the visible light amount increasing agent. The surface of the substrate forms a porous layer having a plurality of fine concavities and convexities on the surface. The fineness of the surface of the substrate can be lowered by the fine unevenness, and as a result, the light transmittance of the substrate is further improved. The average layer thickness of the above porous layer is not particularly limited as long as the transmittance of the substrate can be increased, and is preferably 0.1 to 3 μm, more preferably 0.5 to 1 μm, still more preferably 0.1 to 0.5 μm. More preferably, it is 0.05 to 0.3 μm (50 to 300 nm), more preferably 80 to 250 nm, still more preferably 130 to 250 nm, and particularly preferably 130 to 180 nm.
上述多孔質層之表面較好的是具有最大高度(Rmax)為50nm以下之表面粗糙度,最大高度更好的是30nm以下。多孔質層中所含之氧化鈦的粒徑較好的是1nm~100nm,更好的是1nm~50nm,更好的是1nm~20nm。The surface of the porous layer preferably has a surface roughness having a maximum height (Rmax) of 50 nm or less, and the maximum height is more preferably 30 nm or less. The particle diameter of the titanium oxide contained in the porous layer is preferably from 1 nm to 100 nm, more preferably from 1 nm to 50 nm, still more preferably from 1 nm to 20 nm.
在本發明中,並非藉由蝕刻處理等在基體本身之表面形成微細之凹凸,而是藉由在其表面形成較薄之多孔質層,來在基體表面形成微細之凹凸,因此無需對基體本身進行微細加工,從而容易形成凹凸。又,作為多孔質層之前驅物的穿透可見光量增加劑係藉由塗佈而應用於基體表面,因此可遍及廣大範圍對基體表面進行處理,進而即使針對如透鏡般具有曲面之基體,亦可容易地形成凹凸。In the present invention, fine irregularities are not formed on the surface of the substrate itself by etching treatment or the like, but fine concavities and convexities are formed on the surface of the substrate by forming a thin porous layer on the surface thereof, so that it is not necessary for the substrate itself. Fine processing is performed to easily form irregularities. Further, since the visible light amount increasing agent as the precursor of the porous layer is applied to the surface of the substrate by coating, the surface of the substrate can be treated over a wide range, and even for a substrate having a curved surface like a lens, Concavities and convexities can be easily formed.
因此,本發明中,藉由無論基體之材質及形狀如何均可應用之簡易方法,可使基體之穿透可見光量增大,且可降低反射率,藉此可提供一種穿透率增大且光學特性提昇之高透光性基體。Therefore, in the present invention, the simple method of applying the material regardless of the material and shape of the substrate can increase the amount of visible light transmitted through the substrate and reduce the reflectance, thereby providing an increase in the transmittance. A highly transparent substrate with improved optical properties.
本發明之穿透可見光量增加劑中,除上述成分外,可調配各種正電荷物質、負電荷物質或者該等之混合物。藉此,可避免或降低基體表面之污染,並且將因來自銳鈦礦型氧化鈦及/或矽化合物之電子之飛出而成為激發態的氧、氫、氮等自由基分子恢復至基態,藉由上述作用可防止因各自由基與上述層附近之有機物等之吸附而導致透光性下降的情況,因此可長期維持高透光性。In the penetrating visible light amount increasing agent of the present invention, in addition to the above components, various positively-charged substances, negatively-charged substances or a mixture thereof may be formulated. Thereby, contamination of the surface of the substrate can be avoided or reduced, and radical molecules such as oxygen, hydrogen, nitrogen, etc., which become excited states due to the electrons from the anatase-type titanium oxide and/or the bismuth compound, can be restored to the ground state. By the above action, it is possible to prevent the light-transmitting property from being lowered due to the adsorption of the respective radicals and the organic substance in the vicinity of the layer, and it is possible to maintain high light transmittance for a long period of time.
作為正電荷物質,例如可舉出:陽離子;具有正電荷之導電體或介電質;具有正電荷之導電體與介電質或半導體之複合體;或者該等之混合物。Examples of the positively-charged substance include a cation; a conductor or a dielectric having a positive charge; a composite of a positively-charged conductor and a dielectric or a semiconductor; or a mixture thereof.
作為上述陽離子,並無特別限定,較好的是鈉、鉀等鹼基金屬之離子;鈣等鹼基土金屬之離子;鋁、錫、銫、銦、鈰、硒、鉻、鎳、銻、鐵、銅、錳、鎢、鋯、鋅等金屬元素之離子,特別好的是銅離子。進而,亦可使用甲基紫、俾斯麥棕、亞甲基藍、孔雀綠等陽離子性染料、經含四級氮原子之基團改質之聚矽氧等具有陽離子基之有機分子。離子之價數亦無特別限定,例如可使用1~4價之陽離子。The cation is not particularly limited, and is preferably an ion of a base metal such as sodium or potassium; an ion of a base earth metal such as calcium; aluminum, tin, antimony, indium, antimony, selenium, chromium, nickel, antimony, Ions of metal elements such as iron, copper, manganese, tungsten, zirconium, and zinc are particularly preferred as copper ions. Further, a cationic dye such as methyl violet, Bismarck brown, methylene blue or malachite green, or an organic molecule having a cationic group such as polyfluorene modified by a group containing a quaternary nitrogen atom may be used. The valence of the ions is also not particularly limited, and for example, a cation having a valence of 1 to 4 can be used.
作為上述金屬離子之供給源,亦可使用金屬鹽。具體可舉出:氯化鋁、二氯化錫及四氯化錫、氯化鉻、氯化鎳、三氯化銻及五氯化銻、二氯化鐵及三氯化鐵、氯化銫、三氯化銦、三氯化鈰、四氯化硒、二氯化銅、氯化錳、四氯化鎢、二氯氧化鎢、鎢酸鉀、氧氯化鋯、氯化鋅、碳酸鋇等各種金屬鹽。進而,亦可使用氫氧化鋁、氫氧化鐵、氫氧化鉻、氫氧化銦等金屬氫氧化物,矽鎢酸等之氫氧化物,或者油脂氧化物等氧化物。As the supply source of the above metal ions, a metal salt can also be used. Specific examples include aluminum chloride, tin dichloride and tin tetrachloride, chromium chloride, nickel chloride, antimony trichloride and antimony pentachloride, iron dichloride and ferric chloride, and antimony chloride. , indium trichloride, antimony trichloride, selenium tetrachloride, copper dichloride, manganese chloride, tungsten tetrachloride, tungsten dichloride, potassium tungstate, zirconium oxychloride, zinc chloride, barium carbonate And various metal salts. Further, a metal hydroxide such as aluminum hydroxide, iron hydroxide, chromium hydroxide or indium hydroxide, a hydroxide such as lanthanum tungstic acid, or an oxide such as a grease oxide may be used.
作為具有正電荷之導電體或介電質,可舉出述陽離子以外之可產生正電荷之導電體或介電質,例如就耐久性方面而言,所使用之導電體理想的是金屬,可舉出:鋁、錫、銫、銦、鈰、硒、鉻、鎳、銻、鐵、銀、銅、錳、鉑、鎢、鋯、鋅等金屬或氧化金屬。又,亦可使用該等金屬之複合體或合金。導電體之形狀並無特別限定,可採用粒子狀、薄片狀、纖維狀等任意形狀。The conductor or medium having a positive charge may be a conductor or a dielectric other than a cation which generates a positive charge. For example, in terms of durability, the conductor to be used is preferably a metal. For example: aluminum, tin, antimony, indium, antimony, selenium, chromium, nickel, antimony, iron, silver, copper, manganese, platinum, tungsten, zirconium, zinc and other metals or oxidized metals. Further, a composite or alloy of these metals may also be used. The shape of the conductor is not particularly limited, and any shape such as a particle shape, a flake shape, or a fiber shape can be employed.
作為導電體,亦可使用部分金屬之金屬鹽。具體可例示:氯化鋁、二氯化錫及四氯化錫、氯化鉻、氯化鎳、三氯化銻及五氯化銻、二氯化鐵及三氯化鐵、硝酸銀、氯化銫、三氯化銦、三氯化鈰、四氯化硒、二氯化銅、氯化錳、四氯化鉑、四氯化鎢、二氯氧化鎢、鎢酸鉀、三氯化金、氧氯化鋯、氯化鋅等各種金屬鹽。又,亦可使用氫氧化銦、矽鎢酸等之氫氧化物或氧化物等。As the conductor, a metal salt of a part of metal can also be used. Specific examples are: aluminum chloride, tin dichloride and tin tetrachloride, chromium chloride, nickel chloride, antimony trichloride and antimony pentachloride, iron dichloride and ferric chloride, silver nitrate, chlorination Bismuth, indium trichloride, antimony trichloride, selenium tetrachloride, copper dichloride, manganese chloride, platinum tetrachloride, tungsten tetrachloride, tungsten dichloride, potassium tungstate, gold trichloride, Various metal salts such as zirconium oxychloride and zinc chloride. Further, a hydroxide or an oxide such as indium hydroxide or tungstic acid may be used.
作為具有正電荷之介電質,例如可舉出藉由摩擦而帶正電之羊毛、尼龍等介電質。Examples of the positively-charged dielectric material include a dielectric material such as wool or nylon which is positively charged by friction.
其次,將藉由上述複合體而賦予正電荷之原理示於圖2。圖2係於省略圖示之基體之表面上或表面層中排列有導電體-介電質或半導體-導電體之組合的概念圖。導電體由於以高濃度存在可於內部自由移動之自由電子,而可在表面具有正電荷狀態。再者,亦可使用包含陽離子之導電性物質作為導電體。Next, the principle of imparting a positive charge by the above composite is shown in Fig. 2 . 2 is a conceptual diagram in which a conductor-dielectric or a semiconductor-conductor combination is arranged on the surface of the substrate or a surface layer (not shown). The conductor has a positive charge state on the surface due to the presence of free electrons that are free to move inside at a high concentration. Further, a conductive material containing a cation may be used as the conductor.
另一方面,與導電體鄰接之介電質或半導體由於導電體之表面電荷狀態的影響而介電極化。其結果,在與導電體鄰接之側,介電質或半導體中產生負電荷,且在非鄰接側,介電質或半導體中產生正電荷。藉由該等作用,導電體-介電質或半導體-導電體之組合之表面帶正電荷,而對基體表面賦予正電荷。上述複合體之尺寸(係指通過複合體之最長軸之長度)可為如下範圍:1nm至100μm,較好的是1nm至10μm,更好的是1nm至1μm,更好的是1nm至100nm。On the other hand, the dielectric or semiconductor adjacent to the conductor is dielectrically polarized due to the influence of the surface charge state of the conductor. As a result, a negative charge is generated in the dielectric or semiconductor on the side adjacent to the conductor, and a positive charge is generated in the dielectric or semiconductor on the non-adjacent side. By these actions, the surface of the conductor-dielectric or semiconductor-conductor combination is positively charged while imparting a positive charge to the surface of the substrate. The size of the above composite (referred to as the length through the longest axis of the composite) may be in the range of 1 nm to 100 μm, preferably 1 nm to 10 μm, more preferably 1 nm to 1 μm, still more preferably 1 nm to 100 nm.
構成本發明中所使用之複合體之導電體,就耐久性方面而言,理想的是金屬,可舉出鋁、錫、銫、銦、鈰、硒、鉻、鎳、銻、鐵、銀、銅、錳、鉑、鎢、鋯、鋅等金屬。又,亦可使用該等金屬之氧化物或複合體或者合金。導電體之形狀並無特別限定,可採用粒子狀、薄片狀、纖維狀等任意形狀。The conductor constituting the composite used in the present invention is preferably a metal in terms of durability, and examples thereof include aluminum, tin, antimony, indium, antimony, selenium, chromium, nickel, bismuth, iron, and silver. Copper, manganese, platinum, tungsten, zirconium, zinc and other metals. Further, oxides or composites or alloys of the metals may also be used. The shape of the conductor is not particularly limited, and any shape such as a particle shape, a flake shape, or a fiber shape can be employed.
作為導電體,亦可使用一部分金屬之金屬鹽。具體可例示:氯化鋁、二氯化錫及四氯化錫、氯化鉻、氯化鎳、三氯化銻及五氯化銻、二氯化鐵及三氯化鐵、硝酸銀、氯化銫、三氯化銦、三氯化鈰、四氯化硒、二氯化銅、氯化錳、四氯化鉑、四氯化鎢、二氯氧化鎢、鎢酸鉀、三氯化金、氧氯化鋯、氯化鋅、磷酸鐵鋰等之各種金屬鹽。又,亦可使用氫氧化鋁、氫氧化鐵、氫氧化鉻等上述導電體金屬之氫氧化物,以及氧化鋅等上述導電體金屬之氧化物。As the conductor, a metal salt of a part of metal can also be used. Specific examples are: aluminum chloride, tin dichloride and tin tetrachloride, chromium chloride, nickel chloride, antimony trichloride and antimony pentachloride, iron dichloride and ferric chloride, silver nitrate, chlorination Bismuth, indium trichloride, antimony trichloride, selenium tetrachloride, copper dichloride, manganese chloride, platinum tetrachloride, tungsten tetrachloride, tungsten dichloride, potassium tungstate, gold trichloride, Various metal salts such as zirconium oxychloride, zinc chloride, and lithium iron phosphate. Further, a hydroxide of the above-described conductor metal such as aluminum hydroxide, iron hydroxide or chromium hydroxide, or an oxide of the above-mentioned conductor metal such as zinc oxide can also be used.
作為導電體,亦可使用聚苯胺、聚吡咯、聚噻吩、聚噻吩維尼綸、聚異硫茚、聚乙炔、聚烷基吡咯、聚烷基噻吩、聚對苯、聚苯維尼綸、聚甲氧基苯、聚苯硫醚、聚苯醚、聚蒽、聚萘、聚芘、聚薁等導電性高分子。As the electrical conductor, polyaniline, polypyrrole, polythiophene, polythiophene vinylon, polyisothianaphthene, polyacetylene, polyalkylpyrrole, polyalkylthiophene, polyparaphenylene, polyphenylene vinylon, polymethyl can also be used. Conductive polymers such as oxybenzene, polyphenylene sulfide, polyphenylene ether, polyfluorene, polynaphthalene, polyfluorene, and polyfluorene.
作為半導體,例如有C、Si、Ge、Sn、GaAs、Inp、GeN、ZnSe、PbSnTe等,亦可使用半導體氧化金屬或光半導體金屬、光半導體氧化金屬。較好的是,除氧化鈦(TiO2)以外,使用ZnO、SrTiOP3、CdS、CdO、CaP、InP、In2O3、CaAs、BaTiO3、K2NbO3、Fe2O3、Ta2O3、WO3、NiO、Cu2O、SiC、SiO2、MoS3、InSb、RuO2、CeO2等,理想的是利用Na等使光觸媒功能失活者。Examples of the semiconductor include C, Si, Ge, Sn, GaAs, Inp, GeN, ZnSe, PbSnTe, and the like, and a semiconductor oxide metal, an optical semiconductor metal, or an optical semiconductor oxide metal can also be used. Preferably, in addition to titanium oxide (TiO 2 ), ZnO, SrTiOP 3 , CdS, CdO, CaP, InP, In 2 O 3 , CaAs, BaTiO 3 , K 2 NbO 3 , Fe 2 O 3 , Ta 2 are used. O 3 , WO 3 , NiO, Cu 2 O, SiC, SiO 2 , MoS 3 , InSb, RuO 2 , CeO 2 , etc., are preferably those in which the photocatalytic function is deactivated by using Na or the like.
作為介電質,可使用作為強介電質之鈦酸鋇(PZT)、所謂SBT、BLT、或如下所舉出之PZT、PLZT-(Pb、La)(Zr、Ti)O3,SBT、SBTN-SrBi2(Ta、Nb)2O3,BST-(Ba、Sr)TiO3,LSCO-(La、Sr)CoO3,BLT、BIT-(Bi、La)4Ti3O12,BSO-Bi2SiO3等複合金屬。又,亦可使用作為有機矽化合物之矽烷化合物、聚矽氧化合物、所謂有機改質氧化矽化合物,又,亦可使用有機聚合物絕緣膜芳醚系聚合物、苯并環丁烯、氟系聚合物聚對二甲苯N或F、氟化非晶形碳等之各種低介電材料。As the dielectric, can be used as a ferroelectric substance of barium titanate (PZT), so-called SBT, BLT, or below include the PZT, PLZT- (Pb, La) (Zr, Ti) O 3, SBT, SBTN-SrBi 2 (Ta, Nb ) 2 O 3, BST- (Ba, Sr) TiO 3, LSCO- (La, Sr) CoO 3, BLT, BIT- (Bi, La) 4 Ti 3 O 12, BSO- A composite metal such as Bi 2 SiO 3 . Further, a decane compound, a polyfluorene oxide compound, a so-called organically modified cerium oxide compound, or an organic polymer insulating film aryl ether polymer, benzocyclobutene or a fluorine-based compound may be used. Various low dielectric materials such as polymer parylene N or F, fluorinated amorphous carbon, and the like.
接著,將自帶正電荷之基體表面除去污染物質之機理示於圖3。Next, the mechanism for removing contaminants from the surface of the positively charged substrate is shown in FIG.
首先,對基體表面賦予正電荷(圖3(1))。First, a positive charge is applied to the surface of the substrate (Fig. 3 (1)).
污染物質在基體表面堆積,並藉由太陽光等電磁波的作用而被光氧化。所謂光氧化反應,係指如下現象:藉由以太陽光為首之電磁波的作用,由有機物或無機物表面之水分(H2O)、氧氣(O2)產生羥基自由基(‧OH)及單態氧(1O2)時,自該有機物或無機物奪取電子(e-)而被氧化之現象。有機物之分子結構會因該氧化而發生變化,可見稱為劣化之變色或者脆化現象,而無機物、特別是金屬會生銹。該等被「氧化」之有機物或無機物之表面因電子(e-)之奪去而帶正電。如此,污染物質亦被賦予正電荷(圖3(2))。Contaminants accumulate on the surface of the substrate and are photooxidized by the action of electromagnetic waves such as sunlight. The photooxidation reaction refers to a phenomenon in which hydroxyl radicals (‧OH) and singlet oxygen are generated from moisture (H 2 O) or oxygen (O 2 ) on the surface of organic or inorganic substances by the action of electromagnetic waves such as sunlight. When (1O 2 ), electrons (e-) are taken from the organic or inorganic substance to be oxidized. The molecular structure of an organic substance changes due to the oxidation, and it can be seen as a discoloration or embrittlement phenomenon, and inorganic substances, particularly metals, may rust. The surface of these "oxidized" organic or inorganic substances is positively charged by electrons (e-). Thus, the pollutants are also given a positive charge (Fig. 3 (2)).
在基體表面與污染物質之間會產生正電荷彼此之靜電斥力,而對污染物質產生排斥脫離力。藉此,污染物質對基體表面之固著力降低(圖3(3))。A positive repulsion of positive charges is generated between the surface of the substrate and the contaminant, and a repulsive force is generated for the contaminant. Thereby, the adhesion of the pollutant to the surface of the substrate is lowered (Fig. 3 (3)).
藉由風雨等之物理作用,可容易地將污染物質自基體上除去(圖3(4))。藉此,基體可進行自我清潔。The pollutants can be easily removed from the substrate by the physical action of wind and rain (Fig. 3(4)). Thereby, the substrate can be self-cleaned.
如上述對基體表面之包含有機矽化合物及無機矽化合物的層賦予正電荷,藉此可避免帶正電荷之污染物質附著在基體表面。但是,另一方面,污染物質中存在:如自來水中之氯化物離子等帶負電荷者;原本帶正電荷,但藉由與其他物體之相互作用(摩擦等)而變為帶負電荷者等。此種帶負電荷之污染物質容易吸附在僅帶正電荷之基體表面。因此,上述層亦可同時具有負電荷。藉此,可防止具有負電荷之污染物質附著在基體表面。As described above, a positive electric charge is imparted to the layer containing the organic cerium compound and the inorganic cerium compound on the surface of the substrate, whereby the positively charged contaminant can be prevented from adhering to the surface of the substrate. However, on the other hand, there are negatively charged substances such as chloride ions in tap water; originally charged with positive charges, but become negatively charged by interaction with other objects (friction, etc.) . Such negatively charged contaminants are readily adsorbed on the surface of a substrate that is only positively charged. Therefore, the above layers may also have a negative charge at the same time. Thereby, it is possible to prevent the contaminant having a negative charge from adhering to the surface of the substrate.
作為負電荷物質,例如可舉出:陰離子;具有負電荷之導電體或介電質;具有負電荷之導電體與介電質或半導體之複合體;具有光觸媒功能之物質;或者該等之混合物。Examples of the negatively-charged substance include an anion; a conductor or a dielectric having a negative charge; a composite of a negatively charged conductor and a dielectric or a semiconductor; a substance having a photocatalytic function; or a mixture thereof .
作為上述陰離子,並無特別限定,可舉出:氟化物離子、氯化物離子、碘化物離子等鹵化物離子;氫氧化物離子、硫酸離子、硝酸離子、碳酸離子等無機系離子;乙酸離子等有機系離子。離子之價數亦無特別限定,例如可使用1~4價之陰離子。The anion is not particularly limited, and examples thereof include halide ions such as fluoride ions, chloride ions, and iodide ions; inorganic ions such as hydroxide ions, sulfate ions, nitrate ions, and carbonate ions; and acetate ions. Organic ion. The valence of the ions is also not particularly limited, and for example, an anion having a valence of 1 to 4 can be used.
作為具有負電荷之導電體或介電質,可舉出上述陰離子以外之可產生負電荷之導電體或介電質,例如可舉出:金、銀、鉑等金屬;石墨、硫、硒、碲等元素;硫化砷、硫化銻、硫化水銀等硫化物;黏土、玻璃粉、石英粉、石棉、澱粉、木棉、絲綢、羊毛等;普魯士藍、靛藍、苯胺藍、曙紅、萘酚黃等染料之膠體。該等中,較好的是金、銀、鉑等金屬之膠體,特別好的是銀膠體。此外,可舉出包含前文已述之各種導電體的電池之負電極,以及帶負電之鐵氟龍(註冊商標)、氯乙烯、聚乙烯、聚酯等介電質。Examples of the conductor or dielectric having a negative charge include a conductor or a dielectric other than the anion which generates a negative charge, and examples thereof include metals such as gold, silver, and platinum; and graphite, sulfur, and selenium. Ruthenium and other elements; sulfides such as arsenic sulfide, antimony sulfide, sulfurized mercury; clay, glass powder, quartz powder, asbestos, starch, kapok, silk, wool, etc.; Prussian blue, indigo, aniline blue, blush, naphthol yellow, etc. The colloid of the dye. Among these, a colloid of a metal such as gold, silver or platinum is preferred, and a silver colloid is particularly preferred. Further, examples thereof include a negative electrode of a battery including various conductors described above, and a negatively charged dielectric such as Teflon (registered trademark), vinyl chloride, polyethylene, or polyester.
作為半導體,可使用前文已述者。As the semiconductor, the ones described above can be used.
作為具有光觸媒功能之物質,可使用含有特定金屬化合物、且具有藉由光激發而將該層表面之有機及/或無機化合物氧化分解之功能者。光觸媒之原理通常理解為:特定之金屬化合物藉由光激發而由空氣中之水或氧氣產生OH-或O2 -之自由基種,該自由基種將有機及/或無機化合物氧化還原分解。As a substance having a photocatalytic function, a function of containing a specific metal compound and having oxidative decomposition of an organic and/or inorganic compound on the surface of the layer by photoexcitation can be used. The photocatalytic principle is generally understood to: the particular compound of a metal generated by photoexcitation OH from the water in the air or oxygen - 2 or O - radical species of the radical species to the reductive decomposition of an organic and / or inorganic oxide compounds.
作為上述金屬化合物,除代表性之氧化鈦(TiO2)外,已知有ZnO、SrTiOP3、CdS、CdO、CaP、InP、In2O3、CaAs、BaTiO3、K2NbO3、Fe2O3、Ta2O5、WO3、NiO、Cu2O、SiC、SiO2、MoS3、InSb、RuO2、CeO2等。As the above metal compound, in addition to the representative titanium oxide (TiO 2 ), ZnO, SrTiOP 3 , CdS, CdO, CaP, InP, In 2 O 3 , CaAs, BaTiO 3 , K 2 NbO 3 , Fe 2 are known. O 3 , Ta 2 O 5 , WO 3 , NiO, Cu 2 O, SiC, SiO 2 , MoS 3 , InSb, RuO 2 , CeO 2 , and the like.
具有光觸媒功能之物質亦可含有提昇光觸媒性能之金屬(Ag、Pt)。又,可在不會使光觸媒功能失活之程度之範圍內含有金屬鹽等各種物質。作為上述金屬鹽,例如有鋁、錫、鉻、鎳、銻、鐵、銀、銫、銦、鈰、硒、銅、錳、鈣、鉑、鎢、鋯、鋅等之金屬鹽,此外,對於一部分金屬或非金屬等,亦可使用氫氧化物或氧化物。具體可例示:氯化鋁、二氯化錫及四氯化錫、氯化鉻、氯化鎳、三氯化銻及五氯化銻、二氯化鐵及三氯化鐵、硝酸銀、氯化銫、三氯化銦、三氯化鈰、四氯化硒、二氯化銅、氯化錳、氯化鈣、四氯化鉑、四氯化鎢、二氯氧化鎢、鎢酸鉀、三氯化金、氧氯化鋯、氯化鋅等之各種金屬鹽。又,作為金屬鹽以外之化合物,可例示氫氧化銦、矽鎢酸、二氧化矽溶膠、氫氧化鈣等。A substance having a photocatalytic function may also contain a metal (Ag, Pt) which enhances photocatalytic properties. Further, various substances such as metal salts can be contained within a range that does not deactivate the photocatalyst function. Examples of the metal salt include metal salts of aluminum, tin, chromium, nickel, ruthenium, iron, silver, iridium, indium, bismuth, selenium, copper, manganese, calcium, platinum, tungsten, zirconium, zinc, and the like. A part of the metal or non-metal, etc., may also use a hydroxide or an oxide. Specific examples are: aluminum chloride, tin dichloride and tin tetrachloride, chromium chloride, nickel chloride, antimony trichloride and antimony pentachloride, iron dichloride and ferric chloride, silver nitrate, chlorination Bismuth, indium trichloride, antimony trichloride, selenium tetrachloride, copper dichloride, manganese chloride, calcium chloride, platinum tetrachloride, tungsten tetrachloride, tungsten dichloride, potassium tungstate, three Various metal salts such as gold chloride, zirconium oxychloride, and zinc chloride. Further, examples of the compound other than the metal salt include indium hydroxide, decyl tungstic acid, cerium oxide sol, and calcium hydroxide.
上述具有光觸媒功能之物質在激發態下,自其物質表面之物理吸附水或氧氣吸附OH-(氫氧化自由基)、O2 -(氧化自由基),而使其表面具有陰離子之特性,但若使正電荷物質共存於其上,則根據其濃度比,所謂光觸媒活性會下降或喪失。但是,在本發明中,具有光觸媒功能之物質無需對污染物質之氧化分解作用,因此可用作負電荷物質。In the excited state, the material having the photocatalytic function adsorbs OH - (hydrogen peroxide radical) and O 2 - (oxidized radical) from the physical adsorption water or oxygen of the surface of the material, and has an anionic property on the surface, but When a positively-charged substance is allowed to coexist thereon, the photocatalytic activity is lowered or lost depending on the concentration ratio. However, in the present invention, a substance having a photocatalytic function does not need to be oxidatively decomposed by a contaminant, and thus can be used as a negatively charged substance.
帶負電荷之基體表面與圖3所示之帶正電荷之基體的情況相同,靜電排斥帶負電荷之污染物質,因此可避免該污染物質附著在基體表面。The surface of the negatively charged substrate is the same as that of the positively charged substrate shown in Fig. 3. The electrostatic repulsion of the negatively charged contaminant prevents the contaminant from adhering to the surface of the substrate.
另一方面,污染物質中存在原本具有正電荷但藉由與其他物體之相互作用(摩擦等)而變為帶負電荷者等。此種帶正及負兩方之電荷之污染物質易吸附於僅帶單一電荷之基體表面上。因此,於此情形時,藉由對基體賦予正及負兩方之電荷,可防止此等污染物質附著在基體表面。On the other hand, among the pollutants, there is a person who has a positive charge but becomes a negatively charged by interaction with other objects (friction or the like). Such contaminants with positive and negative charges are easily adsorbed on the surface of a substrate with only a single charge. Therefore, in this case, by imparting positive and negative charges to the substrate, it is possible to prevent such contaminants from adhering to the surface of the substrate.
例如,對於花粉等具有正電荷及負電荷兩方之污染物質,藉由向本發明之穿透可見光量增加劑中調配正電荷物質與負電荷物質兩者,可避免或減少此等污染物質附著在基體上。例如,在具有正電荷與負電荷之基體表面,對如黃砂或高嶺土黏土微粉末、藻菌類或花粉、自來水中之氯化物離子等般具有負電荷或兩性電荷之污染引發物質亦會靜電排斥,而防止其附著在基體表面。因此,可防止因此種雜質之附著所導致之基體表面特性的變化,從而可維持基體表面之潔淨。再者,若正電荷量或負電荷量之一方過大,則吸附具有負電荷之雜質或者藉由光氧化而帶正電荷之污染物質的傾向增強,結果存在基體表面會被污染之虞,因此在基體表面,較好的是正電荷量及負電荷量看起來均衡之狀態,具體而言,較好的是基體表面之帶電壓在-50V至50V之範圍內。For example, for polluting substances having both positive and negative charges such as pollen, by attaching both positively charged substances and negatively charged substances to the penetrating visible light amount increasing agent of the present invention, adhesion of such pollutants can be avoided or reduced. On the substrate. For example, on the surface of a substrate having a positive charge and a negative charge, a pollution-inducing substance having a negative charge or an amphoteric charge such as a yellow sand or kaolin clay fine powder, an algal fungus or a pollen, or a chloride ion in tap water may also be electrostatically repelled. And prevent it from adhering to the surface of the substrate. Therefore, it is possible to prevent a change in the surface characteristics of the substrate caused by the adhesion of such impurities, so that the surface of the substrate can be cleaned. Furthermore, if one of the positive charge amount or the negative charge amount is too large, the tendency to adsorb a negatively charged impurity or a positively charged contaminant by photooxidation is enhanced, and as a result, the surface of the substrate is contaminated, so The surface of the substrate preferably has a state in which the amount of positive charge and the amount of negative charge seem to be balanced. Specifically, it is preferred that the voltage of the surface of the substrate is in the range of -50V to 50V.
又,包含正電荷或負電荷之帶電量相對較少之絕緣物(例如聚矽氧油)的污染物質,根據該物質之種類,若在基體表面僅存在強之正電荷或負電荷,則污染物質之表面電荷會反轉,結果存在該污染物質吸附在該基體表面之虞,因此藉由使正電荷物質及負電荷物質兩者共存,可避免或減少此種吸附,藉此可防止穿透率之下降。Further, a contaminant containing a relatively small amount of a positively or negatively charged insulator (for example, a polyoxygenated oil) may be contaminated if there is only a strong positive or negative charge on the surface of the substrate depending on the kind of the substance. The surface charge of the substance is reversed, and as a result, the contaminant is adsorbed on the surface of the substrate, so that by coexisting both the positively charged substance and the negatively charged substance, such adsorption can be avoided or reduced, thereby preventing penetration. The rate has dropped.
圖4係表示對基體表面上之層賦予正電荷及負電荷兩方之一態樣的概念圖,且為使用介電質或半導體-具有負電荷之導電體-介電質或半導體-具有正電荷之導電體之組合作為層的例子。作為圖4所示之具有負電荷之導電體及具有正電荷之導電體,可使用前文已述者。Figure 4 is a conceptual diagram showing a state in which a positive charge and a negative charge are applied to a layer on a surface of a substrate, and is a dielectric or semiconductor-conductor having a negative charge - a dielectric or a semiconductor - having a positive A combination of electric conductors of electric charge is exemplified as a layer. As the negatively-charged conductor and the positively-charged conductor shown in Fig. 4, the above-mentioned ones can be used.
如圖4所示,與具有負電荷之導電體鄰接之介電質或半導體,由於導電體之表面電荷狀態的影響而介電極化。其結果,在與具有負電荷之導電體鄰接之側,介電質或半導體中產生正電荷,且在與具有正電荷之導電體鄰接之側,介電質或半導體中產生負電荷。藉由該等作用,圖4所示之介電質或半導體-導電體-介電質或半導體-導電體之組合的表面變為帶正電荷或負電荷。上述導電體與介電質或半導體之複合體之尺寸(係指通過複合體之最長軸的長度)可為如下範圍:1nm至100μm,較好的是1nm至10μm,更好的是1nm至1μm,更好的是1nm至100nm之範圍。As shown in FIG. 4, a dielectric or semiconductor adjacent to a negatively charged conductor is dielectrically polarized by the influence of the surface charge state of the conductor. As a result, a positive charge is generated in the dielectric or semiconductor on the side adjacent to the negatively charged conductor, and a negative charge is generated in the dielectric or semiconductor on the side adjacent to the positively charged conductor. By these effects, the surface of the combination of dielectric or semiconductor-conductor-dielectric or semiconductor-conductor shown in Fig. 4 becomes positively or negatively charged. The size of the composite of the above conductor and the dielectric or semiconductor (referring to the length of the longest axis passing through the composite) may be in the range of 1 nm to 100 μm, preferably 1 nm to 10 μm, more preferably 1 nm to 1 μm. More preferably, it is in the range of 1 nm to 100 nm.
圖5係表示對上述層賦予正電荷及負電荷之另一態樣的概念圖。Fig. 5 is a conceptual diagram showing another aspect in which a positive charge and a negative charge are applied to the above layer.
圖5係具有負電荷之導電體與具有正電荷之導電體相鄰接,正電荷及負電荷發生接觸抵消等而較少的狀態。再者,作為具有負電荷之導電體及具有正電荷之導電體,可使用前文已述者。Fig. 5 shows a state in which a conductor having a negative charge is adjacent to a conductor having a positive charge, and a positive charge and a negative charge are in contact with each other and are less. Further, as the conductor having a negative charge and the conductor having a positive charge, those already described above can be used.
接著,將自帶正電荷及負電荷之層表面除去污染物質的機理示於圖6。Next, the mechanism for removing contaminants from the surface of the layer having positive and negative charges is shown in Fig. 6.
在該態樣中,係藉由配置選自陰離子、具有負電荷之導電體或介電質、具有負電荷之導電體與介電質或半導體之複合體、具有光觸媒功能之物質、或者該等之混合物中的負電荷物質,而對層賦予正電荷及負電荷(圖6(1))。In this aspect, a substance selected from an anion, a negatively charged conductor or a dielectric, a negatively charged conductor and a dielectric or a semiconductor, a substance having a photocatalytic function, or the like The negatively charged species in the mixture impart positive and negative charges to the layer (Fig. 6(1)).
污染物質在層表面堆積,藉由太陽光等電磁波之作用而被光氧化。藉此,亦對污染物質賦予正電荷(圖6(2))。Contaminants accumulate on the surface of the layer and are photooxidized by the action of electromagnetic waves such as sunlight. Thereby, a positive charge is also applied to the pollutant (Fig. 6 (2)).
在層表面與污染物質之間產生正電荷彼此之靜電斥力,而對污染物質產生排斥脫離力。藉此,污染物質對層表面之固著力下降(圖6(3))。An electrostatic repulsion of positive charges is generated between the surface of the layer and the pollutant, and a repulsive force is generated for the pollutant. Thereby, the adhesion of the pollutant to the surface of the layer is lowered (Fig. 6 (3)).
藉由風雨等之物理作用,可容易地將污染物質自層上除去(圖6(4))。藉此,基體可進行自我清潔。The pollutants can be easily removed from the layer by the physical action of wind and rain (Fig. 6 (4)). Thereby, the substrate can be self-cleaned.
並且,由於層表面亦存在負電荷,故而亦同樣排斥高嶺土黏土微粉末、氯化物離子等具有負電荷之污染物質或污染引發物質,而使其對層表面之固著力降低。Further, since the surface of the layer also has a negative charge, it also rejects a negatively charged contaminant or a contamination-inducing substance such as a kaolin clay fine powder or a chloride ion, and the adhesion to the surface of the layer is lowered.
上述穿透可見光量增加劑亦可含有各種金屬(Ag、Pt)。又,可在不會使功能失活之程度之範圍內含有金屬鹽等之各種物質。作為上述金屬鹽,例如有鋁、錫、鉻、鎳、銻、鐵、銀、銫、銦、鈰、硒、銅、錳、鈣、鉑、鎢、鋯、鋅等之金屬鹽,此外,對於一部分金屬或非金屬等,亦可使用氫氧化物或氧化物。具體而言,可例示:氯化鋁、二氯化錫及四氯化錫、氯化鉻、氯化鎳、三氯化銻及五氯化銻、二氯化鐵及三氯化鐵、硝酸銀、氯化銫、三氯化銦、三氯化鈰、四氯化硒、二氯化銅、氯化錳、氯化鈣、四氯化鉑、四氯化鎢、二氯氧化鎢、鎢酸鉀、三氯化金、氧氯化鋯、氯化鋅等之各種金屬鹽。又,作為金屬鹽以外之化合物,可例示氫氧化銦、矽鎢酸、二氧化矽溶膠、氫氧化鈣等。The above-mentioned penetrating visible light amount increasing agent may also contain various metals (Ag, Pt). Further, various substances such as metal salts can be contained within a range that does not deactivate the function. Examples of the metal salt include metal salts of aluminum, tin, chromium, nickel, ruthenium, iron, silver, iridium, indium, bismuth, selenium, copper, manganese, calcium, platinum, tungsten, zirconium, zinc, and the like. A part of the metal or non-metal, etc., may also use a hydroxide or an oxide. Specifically, aluminum chloride, tin dichloride and tin tetrachloride, chromium chloride, nickel chloride, antimony trichloride and antimony pentachloride, iron dichloride and ferric chloride, and silver nitrate can be exemplified. , barium chloride, indium trichloride, antimony trichloride, selenium tetrachloride, copper dichloride, manganese chloride, calcium chloride, platinum tetrachloride, tungsten tetrachloride, tungsten dichloride, tungstic acid Various metal salts such as potassium, gold trichloride, zirconium oxychloride, and zinc chloride. Further, examples of the compound other than the metal salt include indium hydroxide, decyl tungstic acid, cerium oxide sol, and calcium hydroxide.
另外,該等正電荷物質、負電荷物質或者該等之組合會使基體表面成為親水性,因此可防止或減少水滴在基體表面之形成。因此,可避免因基體表面之水滴所引起之折射及漫反射而導致透光性下降的情況。In addition, the positively-charged substances, the negatively-charged substances, or a combination thereof may make the surface of the substrate hydrophilic, thereby preventing or reducing the formation of water droplets on the surface of the substrate. Therefore, it is possible to avoid a decrease in light transmittance due to refraction and diffuse reflection caused by water droplets on the surface of the substrate.
本發明中,亦可在上述包含有機矽化合物及無機矽化合物之層與基體表面之間存在中間層。上述中間層例如可包含對基體賦予親水性、疏水性、斥水性或者斥油性之各種有機或無機物質。In the present invention, an intermediate layer may be present between the layer containing the organic cerium compound and the inorganic cerium compound and the surface of the substrate. The intermediate layer may include, for example, various organic or inorganic substances that impart hydrophilicity, hydrophobicity, water repellency, or oil repellency to the substrate.
由本發明所獲得之基體可用於任意領域,特別是可有效地用作要求透光性提高、反射率降低之設備的零件。例如可用於太陽電池等光電池之表面玻璃,作為發電元件之矽電池,液晶顯示器、電漿顯示器、有機EL(electroluminescence,電致發光)顯示器、布朗管電視等各種顯示器之表面玻璃,透鏡等光學元件,窗玻璃等建築構件,以及各種受光體、發光體、投影儀、偏光玻璃、光學玻璃等。特別是在用於室外使用之太陽電池等光電池之表面玻璃或者發電體電池表面時,可藉由高透光性而有助於提高發電效率。The substrate obtained by the present invention can be used in any field, and in particular, it can be effectively used as a part of a device requiring improvement in light transmittance and reduction in reflectance. For example, it can be used as a surface glass for photovoltaic cells such as solar cells, as a battery for power generation elements, as a surface glass for various displays such as liquid crystal displays, plasma displays, organic EL (electroluminescence) displays, and Brown tube televisions, and optical elements such as lenses. , building materials such as window glass, as well as various light-receiving bodies, illuminants, projectors, polarized glass, optical glass, and the like. In particular, when it is used for the surface glass of a photovoltaic cell such as a solar cell for outdoor use or the surface of a power generation cell, it is possible to contribute to improvement in power generation efficiency by high light transmittance.
進而,當使用包含正電荷物質、負電荷物質或者此等之混合物的穿透可見光量增加劑,對基體進行表面處理之情形時,與由於基體表面之親水化而產生之防止水滴形成之效果相互作用,藉由基體表面之靜電斥力而長時間避免或減少污染物質之附著,因此可經時地維持基體之高透光性,例如將該基體用作表面玻璃之光電池可於室外持續地進行高效率之發電。Further, when a substrate containing a positively-charged substance, a negatively-charged substance or a mixture of such a visible light amount increasing agent is used for surface treatment, the effect of preventing water droplet formation due to hydrophilization of the surface of the substrate is mutually Therefore, the adhesion of the contaminant is prevented or reduced for a long time by the electrostatic repulsion of the surface of the substrate, so that the high light transmittance of the substrate can be maintained over time. For example, the photocell using the substrate as the surface glass can be continuously performed outdoors. Efficiency of power generation.
以下,藉由實施例對本發明進行更詳細地例證,但本發明並不限定於實施例。Hereinafter, the present invention will be exemplified in more detail by way of examples, but the invention is not limited to the examples.
以純水分別將二氧化矽溶膠液WM-12(多摩化學工業(股))、摻雜銅及鋯之二氧化鈦水分散液:Z18-1000 Super A(Sustainable Titania Technology(股))、以及摻雜銀之二氧化鈦水分散液SP-2(Sustainable Titania Technology(股))調整為0.6重量%後,以8:1:1之重量比將該等混合,向該混合物中添加2重量%之市售之綿白糖、20重量%之有機矽界面活性劑:Z-B(Sustainable Titania Technology(股))而作為評價液1。Separate cerium oxide sol liquid WM-12 (Tama Chemical Industry Co., Ltd.), copper and zirconium titanium dioxide aqueous dispersion: Z18-1000 Super A (Sustainable Titania Technology), and doping The silver titanium dioxide aqueous dispersion SP-2 (Sustainable Titania Technology) was adjusted to 0.6% by weight, and then mixed in a weight ratio of 8:1:1, and 2% by weight of the commercially available product was added to the mixture. A white sugar, 20% by weight of an organic hydrazine surfactant: ZB (Sustainable Titania Technology) was used as the evaluation liquid 1.
以純水分別將二氧化矽溶膠液WM-12(多摩化學工業(股))、摻雜錫及銅之二氧化鈦水分散液:SnZ18-1000 A(Sustainable Titania Technology(股))、藉由下述方法調製之摻雜鐵之二氧化鈦水分散液調整為0.6重量%後,以8:1:1之重量比將該等混合,向該混含物中添加2重量%之市售之綿白糖、20重量%之有機矽界面活性劑:Z-B(Sustainable Titania Technology(股))而作為評價液2。In the pure water, the cerium oxide sol liquid WM-12 (Tama Chemical Industry Co., Ltd.), the tin-doped and copper-titanium dioxide aqueous dispersion: SnZ18-1000 A (Sustainable Titania Technology), by the following The prepared iron-doped titanium dioxide aqueous dispersion was adjusted to 0.6% by weight, and then mixed in a weight ratio of 8:1:1, and 2% by weight of commercially available white sugar was added to the mixed content, 20 The organic hydrazine surfactant: ZB (Sustainable Titania Technology) was used as the evaluation liquid 2.
準備如下溶液:向將0.712g之FeCl3‧6H2O完全溶解於純水500ml中而成的溶液中,進而添加50%之四氯化鈦溶液(住友Sitix(股)製造)10g後,加入純水而製成1000ml之溶液。向其中滴加將25%之氨水(高杉製藥(股)製造)稀釋10倍而成之氨水,將pH值調整為7.0,使氫氧化鐵與氫氧化鈦之混合物沈澱。以上清液中之導電率達到0.8mS/m之方式以純水持續清洗該沈澱物,於導電率達到0.744mS/m時結束清洗,而製作420g之濃度為0.47重量%之氫氧化物含有液。然後,一面將該氫氧化物含有液冷卻至1~5℃,一面添加25g之35%之過氧化氫(Taiki Chemicals Industry(股)製造)並攪拌16小時後,獲得深黃褐色之透明的摻雜鐵之0.44重量%之非晶型過氧化鈦的分散液440g。以超過濾濃縮裝置將其濃縮,而製備220g之使濃度為0.85重量%之上述分散液。The following solution was prepared: a solution obtained by completely dissolving 0.712 g of FeCl 3 ‧6H 2 O in 500 ml of pure water, and further adding 10% of a titanium tetrachloride solution (manufactured by Sumitomo Sitix Co., Ltd.), and then adding Pure water was used to make a 1000 ml solution. Ammonia water obtained by diluting 10% of ammonia water (manufactured by Takasugi Pharmaceutical Co., Ltd.) by 10 times was added dropwise thereto, and the pH was adjusted to 7.0 to precipitate a mixture of iron hydroxide and titanium hydroxide. The precipitate was continuously washed with pure water in a manner that the conductivity in the supernatant was 0.8 mS/m, and the cleaning was completed when the conductivity reached 0.744 mS/m, and 420 g of a hydroxide-containing liquid having a concentration of 0.47% by weight was produced. . Then, while cooling the hydroxide-containing liquid to 1 to 5 ° C, 25 g of 35% hydrogen peroxide (manufactured by Taiki Chemicals Industry Co., Ltd.) was added and stirred for 16 hours to obtain a dark yellow-brown transparent blend. A dispersion of 0.44% by weight of amorphous iron of amorphous titanium peroxide was 440 g. This was concentrated by an ultrafiltration concentrating apparatus to prepare 220 g of the above dispersion having a concentration of 0.85% by weight.
以純水分別將二氧化矽溶膠液WM-12(多摩化學工案(股))、以及摻雜銅及鋯之二氧化鈦水分散液:Z18-1000 Super A(Sustainable Titania Technology(股))調整為0.6重量%後,以9:1之重量比將該等混合,向該混合物中添加2重量%之市售之綿白糖、20重量%之有機矽界面活性劑:Z-B(Sustainable Titania Technology(股))而作為評價液3。The cerium oxide sol liquid WM-12 (Tama Chemical Engineering Co., Ltd.) and the titanium and zirconium-doped titanium dioxide aqueous dispersion: Z18-1000 Super A (Sustainable Titania Technology) were adjusted to pure water respectively. After 0.6% by weight, the materials were mixed at a weight ratio of 9:1, and 2% by weight of commercially available white sugar and 20% by weight of an organic quinone surfactant were added to the mixture: ZB (Sustainable Titania Technology) ) as the evaluation liquid 3.
以純水將二氧化矽溶膠液WM-12(多摩化學工業(股))調整為0.6重量%,向其中添加2重量%之市售白糖與20重量%之有機矽界面活性劑:Z-B(Sustainable Titania Technology(股))而作為評價液4。The cerium oxide sol liquid WM-12 (Tama Chemical Industry Co., Ltd.) was adjusted to 0.6% by weight with pure water, and 2% by weight of commercially available white sugar and 20% by weight of organic cerium surfactant: ZB (Sustainable) were added thereto. Titania Technology (share)) was used as the evaluation liquid 4.
向評價液4中添加10重量%之銳鈦礦型二氧化鈦水分散液:STi-560 B(Sustainable Titania Technology(股))而作為評價液5。To the evaluation liquid 4, 10% by weight of an anatase-type titanium dioxide aqueous dispersion: STi-560 B (Sustainable Titania Technology) was added as the evaluation liquid 5.
以純水將二氧化矽溶膠液WM-12(多摩化學工業(股))調整為0.6重量%,向其中添加2重量%之市售白糖而作為比較液1。The cerium oxide sol liquid WM-12 (Tama Chemical Industry Co., Ltd.) was adjusted to 0.6% by weight with pure water, and 2% by weight of commercially available white sugar was added thereto as Comparative Liquid 1.
藉由噴塗法,以20g/m2之比例將評價液1~5及比較液1塗佈在使市售透明浮法玻璃(厚度為3mm)成為50mm×50mm之尺寸的各玻璃基板上,進行自然乾燥後,以580℃煅燒30分鐘(高溫加熱處理)而作為評價基板1~5及比較基板1。又,將未處理之玻璃基板作為對照。The evaluation liquids 1 to 5 and the comparative liquid 1 were applied to each of the glass substrates having a size of 50 mm × 50 mm by a commercially available transparent float glass (thickness: 3 mm) by a spray coating method at a ratio of 20 g/m 2 . After naturally drying, it was calcined at 580 ° C for 30 minutes (high-temperature heat treatment) to evaluate substrates 1 to 5 and comparative substrate 1. Further, an untreated glass substrate was used as a control.
使用紫外線-可見光光度計V-550DS(日本分光(股)),在以下條件下,分別對評價基板1~5、比較基板1及對照測定可見光線之穿透率及反射率。測光模式:%T、%R,應答:Medium,掃描速度為100nm/分,起始波長為780nm,結束波長為380nm,資料提取間隔為1.0nm。將結果示於表1。The transmittance and reflectance of visible light were measured on the evaluation substrates 1 to 5, the comparison substrate 1 and the control, respectively, using an ultraviolet-visible spectrophotometer V-550DS (Japan Spectrophotometer) under the following conditions. Metering mode: %T, %R, response: Medium, scanning speed is 100 nm/min, starting wavelength is 780 nm, end wavelength is 380 nm, and data extraction interval is 1.0 nm. The results are shown in Table 1.
根據表1之結果可知:與對照相比,評價基板1~5及比較基板1之透光性有意義地提昇。又,通常可見光穿透率(A)、可見光反射率(B)以及基板之可見光吸收率之和應該為100(%)以下,但對於評價基板1~5而言,可見透光率(A)、可見光反射率(B)以及基板可見光吸收率之和超過了100(%),顯示出在可見光波長區域穿透基板之光的量增大。穿透光量之大小為:評價基板2>評價基板1>評價基板3>評價基板5>評價墓板4>比較基板1。According to the results of Table 1, it was found that the light transmittance of the evaluation substrates 1 to 5 and the comparative substrate 1 was significantly improved as compared with the control. Further, generally, the sum of the visible light transmittance (A), the visible light reflectance (B), and the visible light absorption rate of the substrate should be 100 (%) or less, but for the evaluation substrates 1 to 5, the light transmittance (A) is observed. The sum of the visible light reflectance (B) and the visible light absorptivity of the substrate exceeds 100 (%), and the amount of light penetrating the substrate in the visible light wavelength region is increased. The magnitude of the amount of transmitted light was: evaluation substrate 2 > evaluation substrate 1 > evaluation substrate 3 > evaluation substrate 5 > evaluation tomb 4 > comparative substrate 1.
將除不添加作為熱分解性有機物之市售之綿白糖以外,與評價液1~5及比較液1同樣地製備而成者作為評價液6~10及比較液2。The evaluation liquids 6 to 10 and the comparison liquid 2 were prepared in the same manner as the evaluation liquids 1 to 5 and the comparative liquid 1 except that the commercially available white sugar was added as the pyrolytic organic material.
藉由與評價1中之評價基板之製作相同的方法,塗佈評價液6~10及比較液2並在80℃下加熱15分鐘,並進行乾燥後,利用純水進行清洗,進而使其乾燥(非加熱處理)而作為評價基板6~10及比較基板2。又,將未處理玻璃基板作為對照。The evaluation liquids 6 to 10 and the comparative liquid 2 were applied and heated at 80 ° C for 15 minutes in the same manner as in the production of the evaluation substrate in Evaluation 1, and dried, then washed with pure water, and further dried. (Non-heat treatment) as the evaluation substrates 6 to 10 and the comparison substrate 2. Further, an untreated glass substrate was used as a control.
與評價1中之評價方法同樣地,對評價基板6~10、比較基板2及對照各自測定可見光線之穿透率及反射率。將結果示於表2。In the same manner as the evaluation method in Evaluation 1, the transmittances and reflectances of visible light rays were measured for each of the evaluation substrates 6 to 10, the comparison substrate 2, and the control. The results are shown in Table 2.
根據表2之結果可知:不使用熱分解性有機化合物之情形時,亦顯示相同之傾向。From the results of Table 2, it is understood that the same tendency is exhibited when the thermally decomposable organic compound is not used.
圖1係表示摻雜金屬之過氧化鈦的第1製造方法之一例之概略的圖;Fig. 1 is a schematic view showing an example of a first method for producing a metal-doped titanium peroxide;
圖2係表示複合體之正電荷賦予機構之概念圖;Figure 2 is a conceptual diagram showing a positive charge imparting mechanism of a composite;
圖3(1)~(4)係表示自帶正電荷之基體表面除去污染物質之機構的概念圖;Figure 3 (1) ~ (4) is a conceptual diagram showing the mechanism for removing contaminants from the surface of a positively charged substrate;
圖4係表示本發明中之正電荷及負電荷賦予機構之一例的概念圖;4 is a conceptual diagram showing an example of a positive charge and a negative charge imparting mechanism in the present invention;
圖5係表示本發明中之正電荷及負電荷賦予機構之另一例的概念圖;及Figure 5 is a conceptual diagram showing another example of a positive charge and a negative charge imparting mechanism in the present invention;
圖6(1)~(4)係表示自帶正電荷及負電荷之基體表面除去污染物質之機構的概念圖。6(1) to (4) are conceptual diagrams showing a mechanism for removing contaminants from the surface of a substrate having positive and negative charges.
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