TWI427697B - Etching method for metal film and metal oxide film, and manufacturing method for semiconductor device - Google Patents
Etching method for metal film and metal oxide film, and manufacturing method for semiconductor device Download PDFInfo
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- TWI427697B TWI427697B TW97150647A TW97150647A TWI427697B TW I427697 B TWI427697 B TW I427697B TW 97150647 A TW97150647 A TW 97150647A TW 97150647 A TW97150647 A TW 97150647A TW I427697 B TWI427697 B TW I427697B
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- Prior art keywords
- film
- gas
- metal
- etching
- titanium
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- 238000005530 etching Methods 0.000 title claims description 123
- 229910052751 metal Inorganic materials 0.000 title claims description 85
- 239000002184 metal Substances 0.000 title claims description 85
- 238000000034 method Methods 0.000 title claims description 59
- 229910044991 metal oxide Inorganic materials 0.000 title claims description 48
- 150000004706 metal oxides Chemical class 0.000 title claims description 48
- 239000004065 semiconductor Substances 0.000 title claims description 39
- 238000004519 manufacturing process Methods 0.000 title claims description 24
- 239000007789 gas Substances 0.000 claims description 178
- 239000010936 titanium Substances 0.000 claims description 100
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims description 82
- 229910052719 titanium Inorganic materials 0.000 claims description 81
- 239000010410 layer Substances 0.000 claims description 60
- 239000000460 chlorine Substances 0.000 claims description 46
- 239000000758 substrate Substances 0.000 claims description 38
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 33
- CPELXLSAUQHCOX-UHFFFAOYSA-N Hydrogen bromide Chemical compound Br CPELXLSAUQHCOX-UHFFFAOYSA-N 0.000 claims description 31
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 22
- 239000001301 oxygen Substances 0.000 claims description 22
- 229910052760 oxygen Inorganic materials 0.000 claims description 22
- 229920002120 photoresistant polymer Polymers 0.000 claims description 19
- 229910052715 tantalum Inorganic materials 0.000 claims description 19
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 claims description 19
- 229910052782 aluminium Inorganic materials 0.000 claims description 18
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 18
- MZLGASXMSKOWSE-UHFFFAOYSA-N tantalum nitride Chemical compound [Ta]#N MZLGASXMSKOWSE-UHFFFAOYSA-N 0.000 claims description 18
- 229910052801 chlorine Inorganic materials 0.000 claims description 14
- 229910052735 hafnium Inorganic materials 0.000 claims description 14
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims description 14
- ZAMOUSCENKQFHK-UHFFFAOYSA-N Chlorine atom Chemical compound [Cl] ZAMOUSCENKQFHK-UHFFFAOYSA-N 0.000 claims description 13
- 229920005591 polysilicon Polymers 0.000 claims description 13
- 229910004298 SiO 2 Inorganic materials 0.000 claims description 12
- VSZWPYCFIRKVQL-UHFFFAOYSA-N selanylidenegallium;selenium Chemical compound [Se].[Se]=[Ga].[Se]=[Ga] VSZWPYCFIRKVQL-UHFFFAOYSA-N 0.000 claims description 12
- UNASZPQZIFZUSI-UHFFFAOYSA-N methylidyneniobium Chemical compound [Nb]#C UNASZPQZIFZUSI-UHFFFAOYSA-N 0.000 claims description 11
- VBJZVLUMGGDVMO-UHFFFAOYSA-N hafnium atom Chemical compound [Hf] VBJZVLUMGGDVMO-UHFFFAOYSA-N 0.000 claims description 10
- 229910000420 cerium oxide Inorganic materials 0.000 claims description 9
- 150000004767 nitrides Chemical class 0.000 claims description 9
- BMMGVYCKOGBVEV-UHFFFAOYSA-N oxo(oxoceriooxy)cerium Chemical compound [Ce]=O.O=[Ce]=O BMMGVYCKOGBVEV-UHFFFAOYSA-N 0.000 claims description 9
- 239000011229 interlayer Substances 0.000 claims description 7
- 238000000059 patterning Methods 0.000 claims description 5
- 239000000203 mixture Substances 0.000 claims description 2
- 239000010408 film Substances 0.000 description 356
- 229910010271 silicon carbide Inorganic materials 0.000 description 37
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 37
- 238000012545 processing Methods 0.000 description 36
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium(II) oxide Chemical compound [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 description 35
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 30
- 235000012431 wafers Nutrition 0.000 description 24
- 230000008569 process Effects 0.000 description 22
- NJPPVKZQTLUDBO-UHFFFAOYSA-N novaluron Chemical compound C1=C(Cl)C(OC(F)(F)C(OC(F)(F)F)F)=CC=C1NC(=O)NC(=O)C1=C(F)C=CC=C1F NJPPVKZQTLUDBO-UHFFFAOYSA-N 0.000 description 15
- 229910000042 hydrogen bromide Inorganic materials 0.000 description 11
- 239000010949 copper Substances 0.000 description 10
- 150000002500 ions Chemical class 0.000 description 10
- 229910052732 germanium Inorganic materials 0.000 description 9
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 9
- 239000000463 material Substances 0.000 description 9
- 229910052757 nitrogen Inorganic materials 0.000 description 8
- 239000005368 silicate glass Substances 0.000 description 7
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 6
- -1 nitrogen ions Chemical class 0.000 description 6
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 5
- 238000004380 ashing Methods 0.000 description 5
- 229910052802 copper Inorganic materials 0.000 description 5
- 238000010438 heat treatment Methods 0.000 description 5
- PIGFYZPCRLYGLF-UHFFFAOYSA-N Aluminum nitride Chemical compound [Al]#N PIGFYZPCRLYGLF-UHFFFAOYSA-N 0.000 description 4
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 4
- CETPSERCERDGAM-UHFFFAOYSA-N ceric oxide Chemical compound O=[Ce]=O CETPSERCERDGAM-UHFFFAOYSA-N 0.000 description 4
- 229910000422 cerium(IV) oxide Inorganic materials 0.000 description 4
- 229910052698 phosphorus Inorganic materials 0.000 description 4
- 239000011574 phosphorus Substances 0.000 description 4
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 4
- 229910052721 tungsten Inorganic materials 0.000 description 4
- 239000010937 tungsten Substances 0.000 description 4
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 3
- KJTLSVCANCCWHF-UHFFFAOYSA-N Ruthenium Chemical compound [Ru] KJTLSVCANCCWHF-UHFFFAOYSA-N 0.000 description 3
- 229910010413 TiO 2 Inorganic materials 0.000 description 3
- NRTOMJZYCJJWKI-UHFFFAOYSA-N Titanium nitride Chemical group [Ti]#N NRTOMJZYCJJWKI-UHFFFAOYSA-N 0.000 description 3
- 229910052786 argon Inorganic materials 0.000 description 3
- 238000001636 atomic emission spectroscopy Methods 0.000 description 3
- 238000001816 cooling Methods 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 238000011156 evaluation Methods 0.000 description 3
- 238000001459 lithography Methods 0.000 description 3
- BPUBBGLMJRNUCC-UHFFFAOYSA-N oxygen(2-);tantalum(5+) Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Ta+5].[Ta+5] BPUBBGLMJRNUCC-UHFFFAOYSA-N 0.000 description 3
- 230000009257 reactivity Effects 0.000 description 3
- 229910052707 ruthenium Inorganic materials 0.000 description 3
- 238000007789 sealing Methods 0.000 description 3
- 239000000126 substance Substances 0.000 description 3
- 230000003746 surface roughness Effects 0.000 description 3
- ZVWKZXLXHLZXLS-UHFFFAOYSA-N zirconium nitride Chemical compound [Zr]#N ZVWKZXLXHLZXLS-UHFFFAOYSA-N 0.000 description 3
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 2
- GDFCWFBWQUEQIJ-UHFFFAOYSA-N [B].[P] Chemical compound [B].[P] GDFCWFBWQUEQIJ-UHFFFAOYSA-N 0.000 description 2
- 239000011149 active material Substances 0.000 description 2
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 229910052796 boron Inorganic materials 0.000 description 2
- 239000005380 borophosphosilicate glass Substances 0.000 description 2
- 239000000919 ceramic Substances 0.000 description 2
- 239000004020 conductor Substances 0.000 description 2
- 239000013078 crystal Substances 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 238000010494 dissociation reaction Methods 0.000 description 2
- 230000005593 dissociations Effects 0.000 description 2
- NBVXSUQYWXRMNV-UHFFFAOYSA-N fluoromethane Chemical compound FC NBVXSUQYWXRMNV-UHFFFAOYSA-N 0.000 description 2
- YBMRDBCBODYGJE-UHFFFAOYSA-N germanium dioxide Chemical compound O=[Ge]=O YBMRDBCBODYGJE-UHFFFAOYSA-N 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- 229910000449 hafnium oxide Inorganic materials 0.000 description 2
- WIHZLLGSGQNAGK-UHFFFAOYSA-N hafnium(4+);oxygen(2-) Chemical compound [O-2].[O-2].[Hf+4] WIHZLLGSGQNAGK-UHFFFAOYSA-N 0.000 description 2
- 239000012535 impurity Substances 0.000 description 2
- 239000012212 insulator Substances 0.000 description 2
- 229910052746 lanthanum Inorganic materials 0.000 description 2
- FZLIPJUXYLNCLC-UHFFFAOYSA-N lanthanum atom Chemical compound [La] FZLIPJUXYLNCLC-UHFFFAOYSA-N 0.000 description 2
- NFFIWVVINABMKP-UHFFFAOYSA-N methylidynetantalum Chemical compound [Ta]#C NFFIWVVINABMKP-UHFFFAOYSA-N 0.000 description 2
- 230000002093 peripheral effect Effects 0.000 description 2
- 238000001020 plasma etching Methods 0.000 description 2
- 239000010453 quartz Substances 0.000 description 2
- 239000011347 resin Substances 0.000 description 2
- 229920005989 resin Polymers 0.000 description 2
- WOCIAKWEIIZHES-UHFFFAOYSA-N ruthenium(iv) oxide Chemical compound O=[Ru]=O WOCIAKWEIIZHES-UHFFFAOYSA-N 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 229910003468 tantalcarbide Inorganic materials 0.000 description 2
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 1
- 229910052769 Ytterbium Inorganic materials 0.000 description 1
- QCWXUUIWCKQGHC-UHFFFAOYSA-N Zirconium Chemical compound [Zr] QCWXUUIWCKQGHC-UHFFFAOYSA-N 0.000 description 1
- QJJAOCVRXIWQSR-UHFFFAOYSA-N [Ru]=O.[P] Chemical compound [Ru]=O.[P] QJJAOCVRXIWQSR-UHFFFAOYSA-N 0.000 description 1
- 230000002159 abnormal effect Effects 0.000 description 1
- 125000004429 atom Chemical group 0.000 description 1
- IVHJCRXBQPGLOV-UHFFFAOYSA-N azanylidynetungsten Chemical compound [W]#N IVHJCRXBQPGLOV-UHFFFAOYSA-N 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- 229910010293 ceramic material Inorganic materials 0.000 description 1
- 150000001804 chlorine Chemical class 0.000 description 1
- 238000004590 computer program Methods 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 238000001312 dry etching Methods 0.000 description 1
- 238000005868 electrolysis reaction Methods 0.000 description 1
- 229940119177 germanium dioxide Drugs 0.000 description 1
- 239000003779 heat-resistant material Substances 0.000 description 1
- BHEPBYXIRTUNPN-UHFFFAOYSA-N hydridophosphorus(.) (triplet) Chemical compound [PH] BHEPBYXIRTUNPN-UHFFFAOYSA-N 0.000 description 1
- 230000001939 inductive effect Effects 0.000 description 1
- 229910052741 iridium Inorganic materials 0.000 description 1
- GKOZUEZYRPOHIO-UHFFFAOYSA-N iridium atom Chemical compound [Ir] GKOZUEZYRPOHIO-UHFFFAOYSA-N 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229910052758 niobium Inorganic materials 0.000 description 1
- 239000010955 niobium Substances 0.000 description 1
- GUCVJGMIXFAOAE-UHFFFAOYSA-N niobium atom Chemical compound [Nb] GUCVJGMIXFAOAE-UHFFFAOYSA-N 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 1
- 230000035699 permeability Effects 0.000 description 1
- 239000005365 phosphate glass Substances 0.000 description 1
- XYFCBTPGUUZFHI-UHFFFAOYSA-O phosphonium Chemical compound [PH4+] XYFCBTPGUUZFHI-UHFFFAOYSA-O 0.000 description 1
- 230000001737 promoting effect Effects 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 239000003507 refrigerant Substances 0.000 description 1
- 238000004904 shortening Methods 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 238000009751 slip forming Methods 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- 238000012546 transfer Methods 0.000 description 1
- FAQYAMRNWDIXMY-UHFFFAOYSA-N trichloroborane Chemical compound ClB(Cl)Cl FAQYAMRNWDIXMY-UHFFFAOYSA-N 0.000 description 1
- NAWDYIZEMPQZHO-UHFFFAOYSA-N ytterbium Chemical compound [Yb] NAWDYIZEMPQZHO-UHFFFAOYSA-N 0.000 description 1
- 229910052726 zirconium Inorganic materials 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
- H01L21/321—After treatment
- H01L21/3213—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer
- H01L21/32133—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only
- H01L21/32135—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only by vapour etching only
- H01L21/32136—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only by vapour etching only using plasmas
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32192—Microwave generated discharge
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32192—Microwave generated discharge
- H01J37/32211—Means for coupling power to the plasma
- H01J37/3222—Antennas
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3105—After-treatment
- H01L21/311—Etching the insulating layers by chemical or physical means
- H01L21/31144—Etching the insulating layers by chemical or physical means using masks
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
- H01L21/321—After treatment
- H01L21/3213—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer
- H01L21/32139—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer using masks
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76801—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing
- H01L21/76802—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing by forming openings in dielectrics
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- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Chemical & Material Sciences (AREA)
- Plasma & Fusion (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Analytical Chemistry (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- Drying Of Semiconductors (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
Description
本發明係關於一種用於形成在基板上之金屬膜與金屬氧化膜的蝕刻方法，以及一種半導體裝置的製造方法。The present invention relates to an etching method for a metal film and a metal oxide film formed on a substrate, and a method of manufacturing a semiconductor device.
在半導體裝置的製造程序中，重複多次所謂的微影程序。微影程序包含一系列例如在晶圓上施加光阻、曝光、顯影、蝕刻、以及移除光阻的程序。在此種微影程序中，可能存在金屬氧化膜無意地形成在金屬膜上的情況。由於此種金屬氧化膜原本即為一種非必要的薄膜，因此在製造半導體裝置時必須移除金屬氧化膜。In the manufacturing process of a semiconductor device, a so-called lithography process is repeated a plurality of times. The lithography process includes a series of programs such as applying photoresist, exposing, developing, etching, and removing photoresist on the wafer. In such a lithography process, there may be a case where a metal oxide film is unintentionally formed on the metal film. Since such a metal oxide film is originally an unnecessary film, it is necessary to remove the metal oxide film in the manufacture of a semiconductor device.
例如，圖10A至10D顯示半導體裝置之製造程序的一範例。For example, FIGS. 10A to 10D show an example of a manufacturing procedure of a semiconductor device.
圖10A顯示下列狀態：在矽基板500上依序形成二氧化矽(SiO2 )膜502、碳氮化矽(SiCN)膜506、加氧碳化矽(SiCO)膜508、鈦(Ti)膜510、以及加氧碳化矽(SiCO)膜512。銅(Cu)互連504被埋設在SiO2 膜502內，而光阻圖案514a被形成在加氧碳化矽(SiCO)膜512上。10A shows a state in which a hafnium oxide (SiO 2 ) film 502, a niobium carbonitride (SiCN) film 506, an oxygen-added niobium carbide (SiCO) film 508, and a titanium (Ti) film 510 are sequentially formed on the tantalum substrate 500. And an oxygenated niobium carbide (SiCO) film 512. A copper (Cu) interconnect 504 is buried in the SiO 2 film 502, and a photoresist pattern 514a is formed on the oxygenated tantalum carbide (SiCO) film 512.
接著，使用光阻圖案514a作為遮罩而對SiCO膜512進行蝕刻。因此，如圖10B所示，形成SiCO膜圖案512a。於此時，可在SiCO膜512被移除的部分露出為下層的鈦膜510。Next, the SiCO film 512 is etched using the photoresist pattern 514a as a mask. Therefore, as shown in FIG. 10B, the SiCO film pattern 512a is formed. At this time, the portion of the SiCO film 512 that is removed may be exposed as the underlying titanium film 510.
接著，移除光阻圖案514a。具體而言，在包含氧(O2 )的環境中，對光阻圖案514a實施灰化(ashing)處理。因此，移除光阻圖案514a。然而，在灰化處理期間，於鈦膜510的表面上氧會與鈦產生反應。因此，如圖10C所示，氧化鈦(TiO)膜516必然會形成在鈦膜510上。Next, the photoresist pattern 514a is removed. Specifically, in the environment containing oxygen (O 2 ), the photoresist pattern 514a is subjected to an ashing process. Therefore, the photoresist pattern 514a is removed. However, during the ashing process, oxygen reacts with titanium on the surface of the titanium film 510. Therefore, as shown in FIG. 10C, a titanium oxide (TiO) film 516 is necessarily formed on the titanium film 510.
接著，使用SiCO膜圖案512a作為遮罩而蝕刻沿著氧化鈦膜516的鈦膜510。於此時，吾人通常使用氯(Cl2 )氣體與氬(Ar)氣體的混合氣體，以及溴化氫(HBr)氣體等等來作為蝕刻氣體。Next, the titanium film 510 along the titanium oxide film 516 is etched using the SiCO film pattern 512a as a mask. At this time, I typically chlorine (Cl 2) gas and argon (Ar) gas, a mixed gas, and hydrogen bromide (HBr) gas and the like as an etching gas.
然而，在使用Cl2 氣體與Ar氣體之混合氣體或HBr氣體等等的情況下，無法充分移除例如氧化鈦膜516等等的金屬氧化膜。因此，氧化鈦膜516的蝕刻殘留物516a會留在鈦膜510上的多個位置上。對於下層的鈦膜510而言，蝕刻殘留物516a會成為部分遮罩(即所謂的微遮罩)。當在此種狀態下進行蝕刻時，吾人無法蝕刻部分的微遮罩，並且反應性氣體會集中在微遮罩的周圍。因此，SiCO膜508的表面會呈現粗糙狀。又，當鈦膜510(其為蝕刻目標膜)與絕緣膜(SiCO膜508，其為下伏(underlying)膜)的蝕刻選擇性不足時，將會在微遮罩的周圍進行異常的蝕刻。因此，蝕刻會進行到下伏層並且又會無意地形成開放部518。However, in the case of using a mixed gas of Cl 2 gas and Ar gas or HBr gas or the like, the metal oxide film such as the titanium oxide film 516 or the like cannot be sufficiently removed. Therefore, the etching residue 516a of the titanium oxide film 516 remains at a plurality of locations on the titanium film 510. For the underlying titanium film 510, the etch residue 516a becomes a partial mask (so-called micro-mask). When etching is performed in this state, it is impossible for us to etch a part of the micro-mask, and the reactive gas is concentrated around the micro-mask. Therefore, the surface of the SiCO film 508 may be rough. Further, when the etching selectivity of the titanium film 510 (which is an etching target film) and the insulating film (the SiCO film 508 which is an underlying film) is insufficient, abnormal etching will be performed around the micro-mask. Therefore, the etching proceeds to the underlying layer and the opening portion 518 is inadvertently formed.
同時，為了充分移除金屬氧化膜，吾人可考慮添加三氯化硼(BCl3 )氣體或使用氟碳化合物(CF)系列的氣體。然而，使用這些氣體可充分移除金屬氧化膜，但卻存在著與因為高選擇性而成為遮罩或下伏膜之薄膜的低選擇性問題。Meanwhile, in order to sufficiently remove the metal oxide film, we may consider adding a boron trichloride (BCl 3 ) gas or a gas using a fluorocarbon (CF) series. However, the use of these gases can sufficiently remove the metal oxide film, but there is a problem of low selectivity with a film which becomes a mask or an underlying film due to high selectivity.
此外，在上述範例中，鈦膜被使用作為金屬膜的一個範例。然而，類似的問題會發生在與鈦具有類似性質的鉭(Ta)、鉿(Hf)、鋯(Zr)、以及鋁(Al)上。又，於其中在灰化處理中形成金屬氧化物的一範例被顯示在上述範例中。然而，在使用包含氧之氣體對位在金屬膜上之薄膜進行蝕刻的情況下，金屬氧化膜亦可在蝕刻之後形成於金屬膜上。Further, in the above examples, a titanium film is used as an example of the metal film. However, a similar problem occurs with tantalum (Ta), hafnium (Hf), zirconium (Zr), and aluminum (Al) having similar properties to titanium. Further, an example in which a metal oxide is formed in the ashing treatment is shown in the above examples. However, in the case of etching a film on the metal film using a gas containing oxygen, the metal oxide film may be formed on the metal film after etching.
同時，日本公開專利公報第2006-156675號揭露一種用於蝕刻氮化鎢(WN)膜與下伏層之鎢(W)膜的氣體條件。在此，此公開內容揭露氯(Cl2 )與氧(O2 )的混合氣體係合適的。Meanwhile, Japanese Laid-Open Patent Publication No. 2006-156675 discloses a gas condition for etching a tungsten (W) film of a tungsten nitride (WN) film and an underlying layer. Here, this disclosure discloses that a mixed gas system of chlorine (Cl 2 ) and oxygen (O 2 ) is suitable.
因此，本發明之一目的為提供一種金屬膜與金屬氧化膜的蝕刻方法，以及一種半導體裝置的製造方法，其可以金屬膜與形成在絕緣膜上之金屬氧化膜用的蝕刻程序來充分移除金屬膜與金屬氧化膜，並且充分保持與下伏絕緣膜的選擇性。Accordingly, it is an object of the present invention to provide a method of etching a metal film and a metal oxide film, and a method of fabricating a semiconductor device which can be sufficiently removed by an etching process for a metal film and a metal oxide film formed on the insulating film. The metal film and the metal oxide film are sufficiently maintained in selectivity with the underlying insulating film.
依照本發明之第一實施樣態，一種蝕刻方法，其用於形成在絕緣膜上的金屬膜以及形成在此金屬膜上的金屬氧化膜，此蝕刻方法包含：在包含氮(N2 )，與氯(Cl2 )及溴化氫(HBr)其中任一的氣體中，對金屬膜以及金屬氧化膜進行蝕刻；其中金屬膜係選自於由鈦(Ti)、鉭(Ta)、鉿(Hf)、鋯(Zr)以及鋁(Al)所組成的群組；以及此氣體包含比上此氣體之總流率不低於50%的氮(N2 )。According to a first embodiment of the present invention, an etching method for forming a metal film on an insulating film and a metal oxide film formed on the metal film, the etching method comprising: containing nitrogen (N 2 ), The metal film and the metal oxide film are etched with a gas of any one of chlorine (Cl 2 ) and hydrogen bromide (HBr); wherein the metal film is selected from the group consisting of titanium (Ti), tantalum (Ta), and tantalum (Ti) a group consisting of Hf), zirconium (Zr), and aluminum (Al); and the gas contains nitrogen (N 2 ) not less than 50% of the total flow rate of the gas.
依照本發明之第一實施樣態，使用Cl2 氣體或HBr氣體與N2 氣體的混合氣體來作為蝕刻氣體。又，N2 氣體比上總蝕刻氣體的流率不低於50%。因此，可充分保持與作為下伏層之絕緣層的選擇性，而同時可有效移除位於由鈦等等所形成之金屬膜上的金屬氧化膜。According to the first embodiment of the present invention, a mixed gas of Cl 2 gas or HBr gas and N 2 gas is used as an etching gas. Further, the flow rate of the N 2 gas to the total etching gas is not less than 50%. Therefore, the selectivity to the insulating layer as the underlying layer can be sufficiently maintained while at the same time the metal oxide film located on the metal film formed of titanium or the like can be effectively removed.
在本發明之第一實施樣態中，此金屬膜可為此金屬的氮化物。如本實施樣態所述，吾人可將本發明實際應用在金屬膜為此金屬之氮化物的情況。In the first embodiment of the invention, the metal film can be a nitride of the metal. As described in the present embodiment, the present invention can be practically applied to the case where the metal film is a nitride of this metal.
在本發明之第一實施樣態中，此氣體可包含比上此氣體之總流率不超過80%的氮(N2 )。In the first embodiment of the invention, the gas may comprise nitrogen (N 2 ) which is no more than 80% of the total flow rate of the gas.
如本實施樣態所述，在N2 氣體的流率不超過80%時不明顯降低蝕刻速率的觀點係可實施的。As described in the present embodiment, the viewpoint that the etching rate is not significantly lowered when the flow rate of the N 2 gas does not exceed 80% can be carried out.
在本發明之第一實施樣態中，此氣體可不包含氧(O2 )。In the first embodiment of the invention, the gas may not contain oxygen (O 2 ).
依照本實施樣態，此蝕刻氣體不包含氧。即，在本發明中，由鈦等等所形成的薄膜為蝕刻目標。在此種情況下，吾人可藉由使用不包含氧的蝕刻氣體而增加與下伏膜的選擇性。According to this embodiment, the etching gas does not contain oxygen. That is, in the present invention, a film formed of titanium or the like is an etching target. In this case, we can increase the selectivity to the underlying film by using an etching gas that does not contain oxygen.
在本發明之第一實施樣態中，金屬氧化膜可包含在金屬膜中所包含的相同元素。In the first embodiment of the present invention, the metal oxide film may contain the same elements contained in the metal film.
在本發明之第一實施樣態中，絕緣膜可構成層間絕緣膜或閘極絕緣膜。In the first embodiment of the invention, the insulating film may constitute an interlayer insulating film or a gate insulating film.
在本發明之第一實施樣態中，絕緣膜可為加氧碳化矽(SiCO)。In the first embodiment of the present invention, the insulating film may be oxygenated niobium carbide (SiCO).
依照本實施樣態，SiCO膜被使用作為絕緣膜。由於SiCO為一種低介電常數(Low-k)材料，故其適合作為絕緣膜。According to this embodiment, a SiCO film is used as the insulating film. Since SiCO is a low dielectric constant (Low-k) material, it is suitable as an insulating film.
在本發明之第一實施樣態中，吾人可藉由從徑向線縫隙天線所發射的微波而使此氣體轉變成的電漿，而蝕刻金屬膜與金屬氧化膜。In the first embodiment of the present invention, the metal film and the metal oxide film can be etched by converting the gas into a plasma from the microwave emitted from the radial line slot antenna.
依照本實施樣態，吾人藉由使用徑向線縫隙天線(RLSA，Radial Line Slot Antenna)裝置來實施蝕刻。此徑向線縫隙天線裝置能夠產生用以激發高電子密度與低電子溫度之電漿的微波。因此，徑向線縫隙天線裝置在蝕刻之形狀可控制性方面係較佳的。又，徑向線縫隙天線裝置具有蝕刻氣體變成為離子的高解離度(disassociation degree)。因此，吾人可依據徑向線縫隙天線裝置而將大流率的氮添加至蝕刻氣體中。According to this embodiment, the etching is performed by using a Radial Line Slot Antenna (RLSA) device. The radial line slot antenna device is capable of generating microwaves for exciting plasma of high electron density and low electron temperature. Therefore, the radial line slot antenna device is preferable in terms of shape controllability of etching. Further, the radial line slot antenna device has a high degree of disassociation of the etching gas into ions. Therefore, we can add a large flow rate of nitrogen to the etching gas in accordance with the radial line slot antenna device.
在本發明之第一實施樣態中，金屬膜與金屬氧化膜可在不超過10mTorr的壓力下被蝕刻。In the first embodiment of the invention, the metal film and the metal oxide film can be etched at a pressure of not more than 10 mTorr.
依照本實施樣態，可有效產生氮離子。According to this embodiment, nitrogen ions can be efficiently produced.
依照本發明之第二實施樣態，一種半導體裝置的製造方法，此方法包含下列步驟：在半導體基板上依序形成第一絕緣層、金屬層以及第二絕緣層，此金屬層包含鈦(Ti)、鉭(Ta)、鉿(Hf)、鋯(Zr)或鋁(Al)；使用光阻遮罩對第二絕緣層進行圖案化；在包含氧(O2 )的環境中，移除光阻遮罩；在包含氮(N2 )，與氯(Cl2 )及溴化氫(HBr)其中任一的氣體中，對金屬層進行蝕刻；其中此氣體包含比上此氣體之總流率不低於50%的氮(N2 )。According to a second embodiment of the present invention, a method of fabricating a semiconductor device, the method comprising the steps of: sequentially forming a first insulating layer, a metal layer, and a second insulating layer on a semiconductor substrate, the metal layer comprising titanium (Ti ), tantalum (Ta), hafnium (Hf), zirconium (Zr) or aluminum (Al); patterning the second insulating layer using a photoresist mask; removing light in an environment containing oxygen (O 2 ) a mask; in a gas containing nitrogen (N 2 ), and chlorine (Cl 2 ) and hydrogen bromide (HBr), the metal layer is etched; wherein the gas contains a total flow rate of the gas Not less than 50% nitrogen (N 2 ).
依照本發明之第二實施樣態，金屬氧化膜會因為在包含氧的環境中移除光阻遮罩而無意地形成在由鈦等等所形成的金屬膜上。即使在此種情況下，吾人尚可在蝕刻金屬膜時使用上述蝕刻氣體而充分保持與作為下伏層之絕緣層的選擇性，並且同時有效移除金屬氧化膜。According to the second embodiment of the present invention, the metal oxide film is unintentionally formed on the metal film formed of titanium or the like because the photoresist mask is removed in an environment containing oxygen. Even in such a case, it is possible to sufficiently maintain the selectivity with the insulating layer as the underlying layer while using the etching gas described above while etching the metal film, and at the same time effectively remove the metal oxide film.
在本發明之第二實施樣態中，第一與第二絕緣層可為加氧碳化矽(SiCO)。In a second embodiment of the invention, the first and second insulating layers may be oxygenated tantalum carbide (SiCO).
依照本實施樣態，SiCO膜被使用作為第一絕緣層以及第二絕緣層。由於SiCO膜為一種低介電常數(Low-k)材料，所以其適合作為絕緣膜。According to this embodiment, a SiCO film is used as the first insulating layer and the second insulating layer. Since the SiCO film is a low dielectric constant (Low-k) material, it is suitable as an insulating film.
在本發明之第二實施樣態中，經由光阻遮罩所圖案化的第二絕緣層可為用於金屬層的硬遮罩。In a second embodiment of the invention, the second insulating layer patterned via the photoresist mask may be a hard mask for the metal layer.
依照本實施樣態，使用已圖案化的第二絕緣層作為硬遮罩，而對金屬層進行蝕刻。本發明可應用在此種情況。According to this embodiment, the patterned second insulating layer is used as a hard mask, and the metal layer is etched. The present invention can be applied to such a case.
在本發明之第二實施樣態中，此氣體可包含比上此氣體之總流率不超過80%的氮(N2 )。In a second embodiment of the invention, the gas may comprise nitrogen (N 2 ) which is no more than 80% of the total flow rate of the gas.
如本實施樣態所述，在N2 氣體的流率不超過80%時不明顯降低蝕刻速率的觀點係可實施的。As described in the present embodiment, the viewpoint that the etching rate is not significantly lowered when the flow rate of the N 2 gas does not exceed 80% can be carried out.
依照本發明之第三實施樣態，一種半導體裝置的製造方法，此方法包含下列步驟：在半導體基板上依序形成閘極絕緣膜、金屬膜以及導電膜，此金屬膜包含鈦(Ti)、鉭(Ta)、鉿(Hf)、鋯(Zr)或鋁(Al)；在包含氧(O2 )的環境中，使用遮罩圖案對導電膜進行圖案化；在包含氮(N2 )，與氯(Cl2 )及溴化氫(HBr)其中任一的混合氣體中，對不被已圖案化之導電膜所覆蓋的金屬膜部分進行蝕刻；其中此混合氣體包含比上此混合氣體之總流率不低於50%的氮(N2 )。According to a third embodiment of the present invention, a method of fabricating a semiconductor device, the method comprising the steps of: sequentially forming a gate insulating film, a metal film, and a conductive film on a semiconductor substrate, the metal film comprising titanium (Ti),钽 (Ta), hafnium (Hf), zirconium (Zr) or aluminum (Al); in an environment containing oxygen (O 2 ), the conductive film is patterned using a mask pattern; in the presence of nitrogen (N 2 ), And a mixed gas of any one of chlorine (Cl 2 ) and hydrogen bromide (HBr), etching a portion of the metal film not covered by the patterned conductive film; wherein the mixed gas contains a gas mixture The total flow rate is not less than 50% of nitrogen (N 2 ).
依照本發明之第三實施樣態，金屬氧化膜會因為在包含氧的環境中對導電膜進行圖案化而無意地形成在由鈦等等所形成的金屬膜上。即使在此種情況下，吾人尚可在蝕刻金屬膜時使用上述蝕刻氣體而充分保持與作為下伏層之絕緣層的選擇性，並且同時有效移除金屬氧化膜。According to the third embodiment of the present invention, the metal oxide film is unintentionally formed on the metal film formed of titanium or the like because the conductive film is patterned in an environment containing oxygen. Even in such a case, it is possible to sufficiently maintain the selectivity with the insulating layer as the underlying layer while using the etching gas described above while etching the metal film, and at the same time effectively remove the metal oxide film.
在本發明之第三實施樣態中，閘極絕緣膜可包含二氧化矽(SiO2 )。In the third embodiment of the invention, the gate insulating film may contain hafnium oxide (SiO 2 ).
在本發明之第三實施樣態中，導電膜可包含多晶矽。In a third embodiment of the invention, the conductive film may comprise polysilicon.
在本發明之第三實施樣態中，遮罩圖案可包含氮化矽。In a third embodiment of the invention, the mask pattern may comprise tantalum nitride.
在本發明之第三實施樣態中，吾人可蝕刻部分的金屬膜，而在已圖案化的導電膜上留下遮罩圖案。In the third embodiment of the present invention, a portion of the metal film can be etched while leaving a mask pattern on the patterned conductive film.
依照本實施樣態，即使在遮罩圖案留在導電膜上的情況下，吾人尚可使用上述蝕刻氣體來蝕刻金屬膜。According to this embodiment, even in the case where the mask pattern remains on the conductive film, the etching gas can be used to etch the metal film.
在本發明之第三實施樣態中，此混合氣體可包含比上此混合氣體之總流率不超過80%的氮(N2 )。In the third embodiment of the present invention, the mixed gas may contain nitrogen (N 2 ) which is not more than 80% of the total flow rate of the mixed gas.
如本實施樣態所述，在N2 氣體的流率不超過80%時不明顯降低蝕刻速率的觀點係可實施的。As described in the present embodiment, the viewpoint that the etching rate is not significantly lowered when the flow rate of the N 2 gas does not exceed 80% can be carried out.
以下將參考隨附圖式來說明本發明之較佳實施例。此外，相同的參考符號用以表示相同的元件並且省略其說明。DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS Hereinafter, preferred embodiments of the present invention will be described with reference to the accompanying drawings. In addition, the same reference numerals are used to denote the same elements and the description thereof is omitted.
(蝕刻設備的構造)(Configuration of etching equipment)
圖1係顯示用以執行本發明之蝕刻設備之一範例的橫剖面圖。圖2係顯示圖1所示之蝕刻設備之平面天線構件的平面圖。圖3係顯示圖1所示之蝕刻設備之噴淋頭部分的平面圖。在此，具有徑向線縫隙天線(RLSA，Radial Line Slot Antenna)系統之平面天線構件的蝕刻設備被說明作為一範例。此外，徑向線縫隙天線為一種平面型天線，其具有以產生均等微波之方式所排列的複數個槽孔。因此，使用徑向線縫隙天線的蝕刻設備為一種電漿蝕刻設備，於其中從徑向線縫隙天線將微波發射至處理容器中，並且在真空容器中藉由此微波的電解(electrolysis)，以使氣體產生游離而激發電漿。BRIEF DESCRIPTION OF THE DRAWINGS Figure 1 is a cross-sectional view showing an example of an etching apparatus for carrying out the present invention. 2 is a plan view showing a planar antenna member of the etching apparatus shown in FIG. 1. Figure 3 is a plan view showing a portion of a shower head of the etching apparatus shown in Figure 1. Here, an etching apparatus having a planar antenna member of a Radial Line Slot Antenna (RLSA) system is explained as an example. Further, the radial line slot antenna is a planar antenna having a plurality of slots arranged in such a manner as to generate equal microwaves. Therefore, an etching apparatus using a radial line slot antenna is a plasma etching apparatus in which microwaves are radiated from a radial line slot antenna into a processing container, and electrolysis of the microwave is thereby performed in the vacuum container. The gas is freed to excite the plasma.
如圖1所示，在使用電漿的蝕刻設備22中，側壁與底部係由導體所形成，例如鋁。又，蝕刻設備22具有整體形成圓柱型的處理容器24，而容器24的內部被形成為密閉的處理空間。電漿被形成在此種處理空間內。此種處理容器24為自身接地。As shown in FIG. 1, in the etching apparatus 22 using plasma, the side walls and the bottom are formed of a conductor such as aluminum. Further, the etching apparatus 22 has a processing container 24 integrally formed with a cylindrical shape, and the inside of the container 24 is formed as a sealed processing space. Plasma is formed in such a processing space. Such a processing container 24 is grounded by itself.
在處理容器24的內部容納用以將例如晶圓S之處理目標載置於上表面的台座26。台座26可例如藉由經過防蝕鋁處理(alumite treated)的鋁等等而形成實質平盤狀。又，台座26可透過例如由鋁所形成的支柱28而豎立遠離容器的底部。A pedestal 26 for carrying a processing target such as the wafer S on the upper surface is housed inside the processing container 24. The pedestal 26 can be formed into a substantially flat disk shape, for example, by aluminum or the like treated by alumite treatment. Also, the pedestal 26 can be erected away from the bottom of the container through a post 28 formed, for example, of aluminum.
在處理容器24的側壁上設置閘閥30，以在將晶圓送入內部與送出內部時進行開啟與關閉。又，在處理容器24的底部設置排放出口32。以串聯方式設有壓力控制閥34以及真空幫浦36的排放路徑38被連接至排放出口32。此可使處理容器24的真空內部達到預定的壓力。A gate valve 30 is provided on the side wall of the processing container 24 to be opened and closed when the wafer is fed into and out of the interior. Further, a discharge outlet 32 is provided at the bottom of the processing container 24. A discharge path 38 in which the pressure control valve 34 and the vacuum pump 36 are provided in series is connected to the discharge outlet 32. This allows the interior of the vacuum of the processing vessel 24 to reach a predetermined pressure.
在處理容器24的頂部上進行開孔，並且透過例如O形環的密封部件42將頂板40密閉地設置在開孔上。頂板40係由例如氧化鋁(Al2 O3 )的陶瓷材料所形成，並且對於微波而言具有穿透性(permeability)。又，考慮到耐壓性，頂板40的厚度可例如被製造成約20mm。An opening is made in the top of the processing container 24, and the top plate 40 is hermetically disposed on the opening through a sealing member 42 such as an O-ring. The top plate 40 is formed of a ceramic material such as alumina (Al 2 O 3 ) and has a permeability for microwaves. Also, in consideration of pressure resistance, the thickness of the top plate 40 can be, for example, manufactured to be about 20 mm.
用以在處理容器24內產生電漿的電漿形成單元44被設置在頂板40的上表面上。具體而言，電漿形成單元44具有設置在頂板40之上表面上的盤型平面天線部件46，以及慢波(slow-wave)結構48被設置在平面天線部件46上。慢波結構48對短波長的微波具有高介電常數(permittivity)特性。平面天線部件46被形成為波導盒50的底板，並且以面向位於處理容器24內之台座26的方式加以設置。波導盒50係由導電耙(conductive harrow)圓柱型容器所形成，其可覆蓋慢波結構48的整個上表面。冷卻夾套52被設置在波導盒50的頂部上，以流動冷媒而對波導盒50進行冷卻。A plasma forming unit 44 for generating plasma in the processing container 24 is disposed on the upper surface of the top plate 40. Specifically, the plasma forming unit 44 has a disk-type planar antenna member 46 disposed on the upper surface of the top plate 40, and a slow-wave structure 48 is disposed on the planar antenna member 46. The slow wave structure 48 has a high dielectric constant characteristic for short wavelength microwaves. The planar antenna member 46 is formed as a bottom plate of the waveguide case 50 and is disposed to face the pedestal 26 located in the processing container 24. The waveguide box 50 is formed of a conductive harrow cylindrical container that covers the entire upper surface of the slow wave structure 48. A cooling jacket 52 is disposed on the top of the waveguide box 50 to cool the waveguide box 50 with flowing refrigerant.
波導盒50與平面天線部件46的周緣部皆通至處理容器24。又，同軸波導器54的外管54A被連接至波導盒50的頂部中央。位於同軸波導器54內部的內纜線54B可穿過位於慢波結構48中央上的穿孔，並且連接至平面天線部件46的中央部。又，透過模態轉換器56以及波導器58，將同軸波導器54連接至微波產生器60，以將微波傳送至平面天線部件46。例如，微波產生器60可產生頻率為2.45GHz的微波。此頻率並不限於2.45GHz，吾人亦可使用例如8.35GHz的其他頻率。具有圓形或矩形橫剖面的波導器或同軸波導器可被使用作為波導器58。又，慢波結構48為一種具有提供至平面天線部件46之上表面側之高介電常數特性的部件，此慢波結構亦位於波導盒50的內部。微波的導波長(guide wave-length)會因為慢波結構48的波長縮短效應而被縮短。例如，吾人可使用氮化鋁(AlN)來作為慢波結構48。Both the waveguide box 50 and the peripheral portion of the planar antenna member 46 are passed to the processing container 24. Also, the outer tube 54A of the coaxial waveguide 54 is connected to the center of the top of the waveguide box 50. The inner cable 54B located inside the coaxial waveguide 54 can pass through a through hole located in the center of the slow wave structure 48 and is connected to the central portion of the planar antenna member 46. Further, the coaxial waveguide 54 is coupled to the microwave generator 60 through the modal converter 56 and the waveguide 58 to transmit the microwaves to the planar antenna member 46. For example, microwave generator 60 can generate microwaves at a frequency of 2.45 GHz. This frequency is not limited to 2.45 GHz, and other frequencies such as 8.35 GHz can also be used. A waveguide or coaxial waveguide having a circular or rectangular cross section can be used as the waveguide 58. Further, the slow wave structure 48 is a member having a high dielectric constant characteristic supplied to the upper surface side of the planar antenna member 46, and this slow wave structure is also located inside the waveguide case 50. The guide wave-length of the microwave is shortened due to the wavelength shortening effect of the slow-wave structure 48. For example, aluminum nitride (AlN) can be used as the slow wave structure 48.
平面天線部件46為一種由導電材料所形成的盤狀物，當使用300mm大小的晶圓時，其直徑為400至500mm以及厚度為1至數mm。具體而言，平面天線部件46係例如由具有鍍銀表面的銅板或鋁板所形成。由長溝型穿孔所形成的複數個微波照射孔62被形成在平面天線部件46上。這些微波照射孔62的排列方式並沒有特別限制，並且可排列成例如同心圓型、螺旋型、或放射型，或者可均勻分佈在天線部件的整個表面上。如圖2所示，兩微波照射孔62被排列成實質具有微小間距的T型。複數個此種微波照射孔對被排列成同心圓型。由於以此種方式加以形成，所以平面天線部件46可成為徑向線縫隙天線系統的天線結構。因此，吾人可獲得高密度電漿以及低電子能量的特徵。The planar antenna member 46 is a disk formed of a conductive material having a diameter of 400 to 500 mm and a thickness of 1 to several mm when a 300 mm-sized wafer is used. Specifically, the planar antenna member 46 is formed, for example, of a copper plate or an aluminum plate having a silver plated surface. A plurality of microwave irradiation holes 62 formed by long groove type perforations are formed on the planar antenna member 46. The arrangement of the microwave irradiation holes 62 is not particularly limited, and may be arranged, for example, in a concentric circle shape, a spiral shape, or a radiation type, or may be uniformly distributed over the entire surface of the antenna member. As shown in FIG. 2, the two microwave irradiation holes 62 are arranged in a T shape substantially having a fine pitch. A plurality of such pairs of microwave irradiation holes are arranged in a concentric circle shape. Since it is formed in this manner, the planar antenna member 46 can be an antenna structure of a radial line slot antenna system. Therefore, we can obtain high density plasma and low electron energy characteristics.
氣體供應單元64被設置在載置台座26的頂側上，以將蝕刻所需的氣體供應至處理容器24內。具體而言，氣體供應單元64具有如圖3所示的噴淋頭部70。在噴淋頭部70中，氣體流道66被形成網格型。又，複數個氣體噴出孔68被形成在氣體流道66的中央部分(midstream)。在此種情況下，氣體流道66的每一兩端部皆被連接至形成環型的氣體流道66a。依此種方式，氣體可充分流入每一個氣體流道66。在噴淋頭部70中形成複數個開孔72，這些開孔在避開每一氣體流道66與66a的位置上以垂直方向通過。又，氣體可透過開孔72而進行垂直方向的分佈。整個噴淋頭部70係由石英或鋁等等所形成，以維持對蝕刻氣體的抵抗性。然而，尤其當使用氯系列的氣體時，石英為較佳。A gas supply unit 64 is disposed on the top side of the mounting pedestal 26 to supply the gas required for etching into the processing container 24. Specifically, the gas supply unit 64 has a shower head 70 as shown in FIG. In the shower head 70, the gas flow path 66 is formed into a mesh type. Further, a plurality of gas ejection holes 68 are formed in a midstream of the gas flow path 66. In this case, each end portion of the gas flow path 66 is connected to the gas passage 66a forming the ring type. In this manner, gas can flow into each of the gas flow paths 66 sufficiently. A plurality of openings 72 are formed in the shower head 70, and the openings pass in a vertical direction at a position avoiding each of the gas flow paths 66 and 66a. Further, the gas can be distributed in the vertical direction through the opening 72. The entire shower head 70 is formed of quartz or aluminum or the like to maintain resistance to etching gas. However, quartz is preferred especially when a chlorine series gas is used.
延伸至處理容器24之外部的氣體通道74被連接至氣體流道66a。氣體通道74在中央部分分岔成複數個支流。每一個分岔路徑皆設有例如閥76以及質量流率控制器的流率控制器78，然後且連接至每一個氣體源。在此，於本實施例中使用氯(Cl2 )氣體與氮(N2 )氣體的混合氣體來作為蝕刻氣體。具體而言，吾人可使用用以儲存Cl2 氣體的Cl2 氣體源80A以及用以儲存N2 氣體的N2 氣體源80B來作為氣體源。此外，吾人可藉由使用溴化氫(HBr)氣體來替代Cl2 氣體而獲得類似的效果。又，其可形成：將如上所述的噴淋頭70設置成上、下兩排，而使Cl2 氣體或HBr氣體流至一邊並且使N2 流至另一邊。A gas passage 74 extending to the outside of the processing vessel 24 is connected to the gas flow passage 66a. The gas passage 74 branches into a plurality of substreams at a central portion. Each of the branching paths is provided with a flow rate controller 78 such as a valve 76 and a mass flow rate controller, and then connected to each of the gas sources. Here, a mixed gas of chlorine (Cl 2 ) gas and nitrogen (N 2 ) gas is used as the etching gas in the present embodiment. Specifically, as the gas source, a Cl 2 gas source 80A for storing Cl 2 gas and an N 2 gas source 80B for storing N 2 gas can be used. In addition, a similar effect can be obtained by using hydrogen bromide (HBr) gas instead of Cl 2 gas. Further, it may be formed by disposing the shower head 70 as described above in the upper and lower rows, and flowing the Cl 2 gas or the HBr gas to one side and flowing the N 2 to the other side.
在載置台座26的底側上設置複數個(例如三個)揚升銷82，以在運送晶圓S時垂直移動晶圓S(圖1僅顯示兩個銷)。揚升銷82可藉由揚升桿86而進行垂直移動。揚升桿86係經由可延展式伸縮囊84而穿過處理容器24的底部。又，插銷孔88被形成在台座26上以使揚升銷82插入。整個台座26係由耐熱材料所形成，例如像是氧化鋁(Al2 O3 )的陶瓷。吾人以陶瓷來設置加熱單元90。加熱單元90具有板型的電阻加熱器92，此電阻加熱器係埋設實質遍佈台座26的整個區域。電阻加熱器92可經由穿過支柱28的電線94而連接至加熱器電源96。A plurality of (for example, three) lift pins 82 are provided on the bottom side of the mounting pedestal 26 to vertically move the wafer S when the wafer S is transported (only two pins are shown in FIG. 1). The lift pin 82 is vertically movable by the lift lever 86. The lift rod 86 passes through the bottom of the processing vessel 24 via the malleable bellows 84. Further, a pin hole 88 is formed in the pedestal 26 to insert the lift pin 82. The entire pedestal 26 is formed of a heat resistant material such as a ceramic such as alumina (Al 2 O 3 ). The person sets the heating unit 90 with ceramics. The heating unit 90 has a plate-type electric resistance heater 92 that is buried substantially throughout the entire area of the pedestal 26. The electrical resistance heater 92 can be connected to the heater power source 96 via wires 94 that pass through the struts 28.
又，具有在內部排列成例如網狀之導線98的薄靜電夾頭100被設置在台座26的上表面側上。藉由靜電夾頭100，位於台座26上的晶圓S可被靜電吸附力準確地吸附在靜電夾頭100上。靜電夾頭100的導線98可經由電線102而連接至直流(DC)電源104，以運用靜電吸力。又，用於產生偏壓的高頻電源106被連接至電線102，以在實施蝕刻時，將例如13.56MHz的高頻功率施加至靜電夾頭100的導線98。Further, a thin electrostatic chuck 100 having wires 98 arranged in a mesh shape inside is provided on the upper surface side of the pedestal 26. With the electrostatic chuck 100, the wafer S on the pedestal 26 can be accurately adsorbed on the electrostatic chuck 100 by electrostatic attraction. The wires 98 of the electrostatic chuck 100 can be connected to a direct current (DC) power source 104 via wires 102 to utilize electrostatic attraction. Also, a high frequency power source 106 for generating a bias voltage is connected to the electric wire 102 to apply a high frequency power of, for example, 13.56 MHz to the wire 98 of the electrostatic chuck 100 when etching is performed.
蝕刻設備22的整體操作係被例如由微電腦等等所形成的控制單元108加以控制。用以執行此種操作的電腦程式被儲存在記憶媒體110中，例如硬碟、軟碟、光碟(CD，Compact Disc)、數位光碟(DVD，Digital Versatile Disk)、以及快閃記憶體等等。具體而言，吾人可依照來自控制單元108的指令，而執行每一種氣體的供應以及每一種氣體的流率控制、微波的供應以及高頻率與功率控制、以及處理溫度與處理壓力的控制。The overall operation of the etching apparatus 22 is controlled by a control unit 108 formed, for example, by a microcomputer or the like. The computer program for performing such operations is stored in the memory medium 110, such as a hard disk, a floppy disk, a compact disc (CD), a digital compact disc (DVD, Digital Versatile Disk), and a flash memory. In particular, we can perform the supply of each gas and the flow rate control of each gas, the supply of microwaves, and the high frequency and power control, as well as the control of the process temperature and process pressure, in accordance with instructions from the control unit 108.
(蝕刻方法)(etching method)
將參考圖1與4來說明使用如上述所構成之蝕刻設備22的蝕刻方法。此外，圖4為晶圓S的部分橫剖面圖，此晶圓S為本發明之蝕刻方法的處理目標。An etching method using the etching apparatus 22 constructed as described above will be explained with reference to Figs. In addition, FIG. 4 is a partial cross-sectional view of the wafer S which is the processing target of the etching method of the present invention.
首先，透過閘閥30以運送臂(無圖示)將晶圓S存放在處理容器24內。藉由上下移動揚升銷82，而將晶圓S放置在載置表面上，此載置表面係位於台座26的上表面上。然後，將晶圓S進行真空吸塵(vacuumed)並且藉由靜電夾頭100加以固持。First, the wafer S is stored in the processing container 24 by a transfer arm (not shown) through the gate valve 30. The wafer S is placed on the mounting surface by moving the lift pins 82 up and down, and the mounting surface is located on the upper surface of the pedestal 26. Then, the wafer S is vacuumed and held by the electrostatic chuck 100.
在此，晶圓S係呈現例如圖4所示的狀態。具體來說，晶圓S係呈現下列狀態：在作為半導體基板的矽(Si)基板200上連續形成作為絕緣層的加氧碳化矽(SiCO)膜202、作為金屬膜的鈦(Ti)膜204、以及作為金屬氧化膜的氧化鈦(TiO)膜206。以前處理事先對晶圓S進行處理，而使晶圓S產生上述狀態。此外，除了SiCO膜以外，吾人亦可使用氧化矽(SiO2 )膜、硼磷矽酸鹽玻璃(BPSG，Boron Phosphorus Silicate Glass；包含硼與磷的氧化矽膜)膜、磷矽酸鹽玻璃(PSG，Phosphorus Silicate Glass；包含磷的氧化矽膜)膜以及無掺雜矽酸鹽玻璃(NSG，Non-doped Silicate Glass；無掺雜的氧化矽膜)膜來作為絕緣膜。又，與鈦具有類似性質的鋯(Zr)、鉿(Hf)、鋁(Al)、以及鉭(Ta)的金屬膜可被使用作為金屬膜。此係因為鋯(Zr)、鉿(Hf)與鈦皆為屬於Ⅳ-A族的元素，而鋁(Al)及鉭(Ta)與鈦相同，皆被使用作為配線材料。本發明可應用在這些金屬膜上。又，上述金屬膜的氮化物亦可被使用作為金屬膜。即，上述金屬膜的氮化物為氮化鈦(TiN)、氮化鉭(TaN)、氮化鉿(HfN)、氮化鋯(ZrN)以及氮化鋁(AlN)。又，氧化鈦膜包含由不同化學結構所形成的薄膜，例如TiO2 、Ti2 O3 、以及Ti3 O5 。此對於其他金屬氧化膜而言亦係成立的。金屬氧化膜為一種包含相同於金屬膜內所包含之元素的薄膜。例如，當金屬膜為鉭(Ta)時，其金屬氧化膜則為氧化鉭(Ta2 O5 )。又，氧化鈦膜206可無意地被形成在鈦膜204上。氧化鈦膜206可部分稀疏地被形成在鈦膜204上。又，由光阻等等所形成的遮罩圖案可視需要而形成在鈦膜204或氧化鈦膜206上。Here, the wafer S is in a state as shown, for example, in FIG. Specifically, the wafer S is in a state in which an oxygen-added silicon carbide (SiCO) film 202 as an insulating layer and a titanium (Ti) film 204 as a metal film are continuously formed on a germanium (Si) substrate 200 as a semiconductor substrate. And a titanium oxide (TiO) film 206 as a metal oxide film. The wafer S is processed in advance by the processing, and the wafer S is caused to have the above state. In addition, in addition to the SiCO film, we can also use a cerium oxide (SiO 2 ) film, a borophosphonate glass (BPSG, Boron Phosphorus Silicate Glass) film, and a phosphonium silicate glass ( PSG, Phosphorus Silicate Glass; a film containing phosphorus ruthenium oxide film and a non-doped silicate glass (NSG) film as an insulating film. Further, a metal film of zirconium (Zr), hafnium (Hf), aluminum (Al), and tantalum (Ta) having similar properties to titanium can be used as the metal film. This is because zirconium (Zr), hafnium (Hf) and titanium are all elements belonging to group IV-A, and aluminum (Al) and tantalum (Ta) are the same as titanium, and are used as wiring materials. The present invention can be applied to these metal films. Further, a nitride of the above metal film can also be used as a metal film. That is, the nitride of the metal film is titanium nitride (TiN), tantalum nitride (TaN), hafnium nitride (HfN), zirconium nitride (ZrN), and aluminum nitride (AlN). Further, the titanium oxide film contains thin films formed of different chemical structures, such as TiO 2 , Ti 2 O 3 , and Ti 3 O 5 . This is also true for other metal oxide films. The metal oxide film is a film containing the same elements as contained in the metal film. For example, when the metal film is tantalum (Ta), the metal oxide film thereof is tantalum oxide (Ta 2 O 5 ). Also, the titanium oxide film 206 may be unintentionally formed on the titanium film 204. The titanium oxide film 206 may be partially sparsely formed on the titanium film 204. Further, a mask pattern formed of a photoresist or the like may be formed on the titanium film 204 or the titanium oxide film 206 as needed.
又，在此的蝕刻目標層係作為金屬氧化膜的氧化鈦膜206以及作為金屬膜的鈦膜204。即，氧化鈦膜206以及鈦膜204在此被連續蝕刻。Further, the etching target layer here is a titanium oxide film 206 as a metal oxide film and a titanium film 204 as a metal film. That is, the titanium oxide film 206 and the titanium film 204 are continuously etched here.
藉由加熱單元90，將晶圓S維持在預定的處理溫度。又，使Cl2 氣體與N2 氣體從各氣體源80A與80B流向噴淋頭部70。從噴淋頭部70將流動的Cl2 氣體與N2 氣體供應至處理容器24。在此，N2 氣體比上蝕刻氣體之總流率的流量比係不低於50%。由於包含不低於50%的高流率N2 氣體，所以例如氧化鈦膜206的金屬氧化膜可藉由氮離子的還原作用而有效被移除。又，N2 氣體比上蝕刻氣體之總流率的流量比較佳係不高於80%。此係因為蝕刻速率會明顯降低，並且在N2 氣體流率高於80%的情況下，其會變得不可實施。此係因為在N2 氣體流率高於80%的情況下，會減少用以促使蝕刻的Cl2 與HBr。此外，使用HBr氣體來替代Cl2 氣體亦可獲得類似的效果。又，在本實施例中蝕刻氣體並不包含氧(O2 )。在蝕刻目標膜為鎢(W)的情況下，則必須將氧添加至蝕刻氣體中，以增加與下伏(underlying)膜的選擇性。此係因為W具有相當低的反應性，因此藉由將氧添加至蝕刻氣體中，以增加反應性進而增加與下伏膜的選擇性。然而，在本實施例中，蝕刻目標層為鈦膜或具有類似性質的薄膜。由於這些薄膜相較於W而具有較高的反應性，所以在不添加氧的情況下的確能夠確保與下伏層的選擇性。The wafer S is maintained at a predetermined processing temperature by the heating unit 90. Further, Cl 2 gas and N 2 gas are caused to flow from the respective gas sources 80A and 80B to the shower head 70. The flowing Cl 2 gas and the N 2 gas are supplied from the shower head 70 to the processing container 24. Here, the flow ratio of the N 2 gas to the total flow rate of the upper etching gas is not less than 50%. Since a high flow rate N 2 gas of not less than 50% is contained, a metal oxide film such as the titanium oxide film 206 can be effectively removed by reduction of nitrogen ions. Further, the flow rate of the N 2 gas is higher than 80% of the total flow rate of the upper etching gas. This system will be significantly reduced because the etching rate, and in the case of N 2 gas flow rate is higher than 80%, it becomes unfeasible. This is because, in the case where the N 2 gas flow rate is higher than 80%, Cl 2 and HBr for promoting etching are reduced. In addition, a similar effect can be obtained by using HBr gas instead of Cl 2 gas. Further, in the present embodiment, the etching gas does not contain oxygen (O 2 ). In the case where the etching target film is tungsten (W), it is necessary to add oxygen to the etching gas to increase the selectivity with the underlying film. This is because W has a relatively low reactivity, so oxygen is added to the etching gas to increase the reactivity and thereby increase the selectivity to the underlying film. However, in the present embodiment, the etching target layer is a titanium film or a film having similar properties. Since these films have higher reactivity than W, it is indeed possible to ensure selectivity with the underlying layer without adding oxygen.
又，藉由控制壓力控制閥34以使處理容器24的內部維持預定的處理壓力。在此，處理壓力較佳係維持不超過10mTorr。此係因為氮離子可被有效產生。同時，啟動電漿形成單元44的微波產生器60。由微波產生器60所產生的微波透過波導器58以及同軸波導器54而被供應至平面天線部件46。因此，其波長已藉由慢波結構48縮短的微波被導引至處理空間。依此種方式，吾人可藉由在處理空間中產生電漿而執行使用預定電漿的蝕刻處理。Further, by controlling the pressure control valve 34, the inside of the processing container 24 is maintained at a predetermined processing pressure. Here, the treatment pressure is preferably maintained at not more than 10 mTorr. This is because nitrogen ions can be efficiently produced. At the same time, the microwave generator 60 of the plasma forming unit 44 is activated. The microwave generated by the microwave generator 60 is supplied to the planar antenna member 46 through the waveguide 58 and the coaxial waveguide 54. Therefore, the microwave whose wavelength has been shortened by the slow wave structure 48 is guided to the processing space. In this way, we can perform an etching process using a predetermined plasma by generating a plasma in the processing space.
當微波依此種方式從平面天線部件46被導引至處理容器24時，每一Cl2 與HBr氣體可藉由微波進行電漿化(plasmanized)與活化(activated)。為形成在晶圓S上之蝕刻目標層的TiO膜206以及Ti膜204會依序被於此時所產生的活性物質所蝕刻並且移除。又，上述每一種氣體會向下流動而實質均勻擴散在載置台座26的周緣部上，並且透過排放出口32而從排放路徑38排出。在進行蝕刻處理時，從用於產生偏壓的高頻電源106將用於產生偏壓的高頻率被施加至位於靜電夾頭100內的導線98。因此，藉由適合的線性度(linearity)將活性物質等等引至晶圓表面，而盡可能地保持蝕刻形狀。When microwaves are directed from the planar antenna component 46 to the processing vessel 24 in this manner, each Cl 2 and HBr gas can be plasmaated and activated by microwaves. The TiO film 206 and the Ti film 204, which are formed to etch the target layer on the wafer S, are sequentially etched and removed by the active material generated at this time. Further, each of the above-described gases flows downward and substantially uniformly diffuses on the peripheral portion of the mounting pedestal 26, and is discharged from the discharge path 38 through the discharge outlet 32. At the time of the etching process, a high frequency for generating a bias voltage is applied from the high frequency power source 106 for generating a bias voltage to the wire 98 located inside the electrostatic chuck 100. Therefore, the active material or the like is guided to the wafer surface by a suitable linearity, and the etching shape is maintained as much as possible.
依此種方式，Cl2 氣體或HBr氣體與N2 氣體的混合氣體被使用在本發明的蝕刻方法中。又，N2 氣體比上總蝕刻氣體的流率不低於50%。因此，吾人可充分保持與作為下伏層之絕緣層的選擇性，而同時移除如上所述之例如氧化鈦膜206的金屬氧化膜。換言之，蝕刻目標層的表面粗糙度會因為如圖10D所示之微遮罩的產生而被抑制。因此，依照本發明之蝕刻方法，吾人可充分移除金屬膜與金屬氧化膜，並且可保持與下伏絕緣膜的選擇性。In this manner, a mixed gas of Cl 2 gas or HBr gas and N 2 gas is used in the etching method of the present invention. Further, the flow rate of the N 2 gas to the total etching gas is not less than 50%. Therefore, it is possible for the person to sufficiently maintain the selectivity with the insulating layer as the underlying layer while simultaneously removing the metal oxide film such as the titanium oxide film 206 as described above. In other words, the surface roughness of the etch target layer is suppressed due to the generation of the micro mask as shown in FIG. 10D. Therefore, according to the etching method of the present invention, the metal film and the metal oxide film can be sufficiently removed, and the selectivity to the underlying insulating film can be maintained.
(半導體裝置的製造方法)(Method of Manufacturing Semiconductor Device)
接著，將參考圖5A至5D以及6A至6C來說明使用上述本發明之蝕刻方法的半導體裝置的製造方法。此外，由於在本發明之蝕刻方法中所說明的事項亦可應用於以下所述之半導體裝置的製造方法，因此省略相同事項的說明。Next, a method of manufacturing a semiconductor device using the above-described etching method of the present invention will be described with reference to FIGS. 5A to 5D and 6A to 6C. Further, since the matters described in the etching method of the present invention can also be applied to the method of manufacturing a semiconductor device described below, the description of the same matters will be omitted.
首先，將使用圖5A至5D來說明一實施例，於其中將本發明之蝕刻方法應用在層間絕緣膜形成程序上。First, an embodiment will be explained using Figs. 5A to 5D in which the etching method of the present invention is applied to an interlayer insulating film forming process.
圖5A顯示在半導體裝置之製造程序的中途，層間絕緣膜被形成在半導體基板上的狀態。即，其呈現下列狀態：在矽(Si)基板300上依序形成二氧化矽(SiO2 )膜302、碳氮化矽(SiCN)膜306、加氧碳化矽(SiCO)膜308、鈦(Ti)膜310以及加氧碳化矽(SiCO)膜312。在SiO2 膜302中，埋設銅(Cu)互連304，並且在加氧碳化矽(SiCO)膜312上形成光阻圖案314a。在本發明中，矽基板300相當於半導體基板，SiCO膜308相當於第一絕緣層，鈦膜310相當於金屬層，而SiCO膜312則相當於第二絕緣層。以下將詳細說明每一個構件。FIG. 5A shows a state in which an interlayer insulating film is formed on a semiconductor substrate in the middle of a manufacturing process of a semiconductor device. That is, it exhibits a state in which a cerium oxide (SiO 2 ) film 302, a lanthanum carbonitride (SiCN) film 306, an oxynitride lanthanum (SiCO) film 308, titanium (s) are sequentially formed on the ytterbium (Si) substrate 300. Ti) film 310 and an oxygenated niobium carbide (SiCO) film 312. In the SiO 2 film 302, a copper (Cu) interconnect 304 is buried, and a photoresist pattern 314a is formed on the oxygen-added silicon carbide (SiCO) film 312. In the present invention, the ruthenium substrate 300 corresponds to a semiconductor substrate, the SiCO film 308 corresponds to a first insulating layer, the titanium film 310 corresponds to a metal layer, and the SiCO film 312 corresponds to a second insulating layer. Each component will be described in detail below.
矽基板300為一種由單晶矽所形成的基板。又，矽基板300可為絕緣層上覆矽(SOI，Silicon on Insulator)的基板、藍寶石上覆矽(SOS，Silicon on Sapphire)的基板或石英上覆矽(SOQ，Silicon on Quartz)的基板，而非整塊的矽基板。The germanium substrate 300 is a substrate formed of single crystal germanium. Further, the ruthenium substrate 300 may be a substrate on a silicon-on-insulator (SOI), a substrate on a sapphire-on-the-spot (SOS), or a substrate on a quartz-on-silicon (SOQ). Rather than a monolithic substrate.
Cu互連304即所謂的埋設互連，其埋設在SiO2 膜302內。Cu互連304與矽基板300上的雜質區域(無圖示)以及電晶體(無圖示)的每一個電極等等產生電性連接。由鋁(Al)或鎢(W)所形成的互連可被形成在SiO2 膜302上，以替代Cu互連304。The Cu interconnect 304 is a so-called buried interconnect that is buried within the SiO 2 film 302. The Cu interconnect 304 is electrically connected to an impurity region (not shown) on the germanium substrate 300 and each electrode or the like of a transistor (not shown). Interconnected aluminum (Al) or tungsten (W) may be formed on the formed SiO 2 film 302, instead of the Cu interconnection 304.
SiCO膜308為一種可作為層間絕緣膜的薄膜。又，SiCO膜312為一種可在後續處理中作為硬遮罩的薄膜。使用SiCO膜作為第一絕緣層以及第二絕緣層的理由為：SiCO為一種低介電常數(low-k)材料，因此適合作為層間絕緣膜。然而，除了SiCO膜以外，吾人亦可任意地使用合適的絕緣膜，例如氧化矽(SiO2 )膜、硼磷矽酸鹽玻璃(BPSG，Boron Phosphorus Silicate Glass；包含硼與磷的氧化矽膜)膜、磷矽酸鹽玻璃(PSG，Phosphorus Silicate Glass；包含磷的氧化矽膜)膜以及無掺雜矽酸鹽玻璃(NSG，Non-doped Silicate Glass；無掺雜的氧化矽膜)膜，以作為第一絕緣層以及第二絕緣層。The SiCO film 308 is a film which can be used as an interlayer insulating film. Further, the SiCO film 312 is a film which can be used as a hard mask in subsequent processing. The reason why the SiCO film is used as the first insulating layer and the second insulating layer is that SiCO is a low dielectric constant (low-k) material and thus is suitable as an interlayer insulating film. However, in addition to the SiCO film, a suitable insulating film such as a cerium oxide (SiO 2 ) film or a borophosphonate glass (BPSG, Boron Phosphorus Silicate Glass; a cerium oxide film containing boron and phosphorus) may be optionally used. Membrane, phosphorous phosphate glass (PSG, Phosphorus Silicate Glass) film, and non-doped silicate glass (NSG, non-doped cerium oxide film) film As the first insulating layer and the second insulating layer.
鈦膜310為一種在後續處理中被圖案化並且作為硬遮罩的薄膜。在本實施例中，鈦膜310為蝕刻目標層。使用鈦膜的理由為：鈦已被使用作為配線材料或阻障金屬，因此其為一種便於使用的材料。然而，除了鈦膜以外，吾人亦可使用由鉭(Ta)、鉿(Hf)、鋯(Zr)以及鋁(Al)所形成而與鈦具有類似性質的薄膜來作為金屬膜。又，上述金屬層的氮化物亦可被使用作為金屬膜。即，上述金屬層的氮化物為：氮化鈦(TiN)、氮化鉭(TaN)、氮化鉿(HfN)、氮化鋯(ZrN)、以及氮化鋁(AlN)。The titanium film 310 is a film that is patterned in a subsequent process and serves as a hard mask. In the present embodiment, the titanium film 310 is an etch target layer. The reason for using the titanium film is that titanium has been used as a wiring material or a barrier metal, and thus it is a material that is easy to use. However, in addition to the titanium film, a film formed of tantalum (Ta), hafnium (Hf), zirconium (Zr), and aluminum (Al) and having similar properties to titanium may be used as the metal film. Further, a nitride of the above metal layer may also be used as the metal film. That is, the nitride of the metal layer is titanium nitride (TiN), tantalum nitride (TaN), hafnium nitride (HfN), zirconium nitride (ZrN), and aluminum nitride (AlN).
接著，使用光阻圖案314a作為遮罩而對SiCO膜312進行蝕刻。因此，如圖5B所示，形成SiCO膜圖案312a。SiCO膜圖案312a可作為用以對位於下層之鈦膜310進行圖案化的硬遮罩。於此時，可在SiCO膜312被移除的部分露出位於下層的鈦膜310。Next, the SiCO film 312 is etched using the photoresist pattern 314a as a mask. Therefore, as shown in FIG. 5B, the SiCO film pattern 312a is formed. The SiCO film pattern 312a can serve as a hard mask for patterning the titanium film 310 located in the lower layer. At this time, the titanium film 310 located under the lower layer may be exposed at a portion where the SiCO film 312 is removed.
接著，移除光阻圖案314a。具體而言，在包含氧(O2 )的環境中，對光阻圖案314a實施灰化(ashing)處理。因此，移除光阻圖案314a。然而，在此灰化處理的期間，於鈦膜310的表面上氧與鈦會進行反應。因此，如圖5C所示，氧化鈦(TiO)膜316必然會形成在鈦膜310上。此種氧化鈦膜原本即為一種非必要的薄膜並且被無意地形成。又，氧化鈦膜包含由不同化學結構所形成的薄膜，例如TiO2 、Ti2 O3 、Ti3 O5 等等。此對於其他金屬氧化膜而言亦係成立的。又，金屬氧化膜為一種包含相同於金屬膜內所包含之元素的薄膜。例如，在金屬膜為鉭(Ta)的情況下，其金屬氧化膜則為氧化鉭(Ta2 O5 )。又，氧化鈦膜316可部分稀疏地形成在鈦膜310上。Next, the photoresist pattern 314a is removed. Specifically, in the environment containing oxygen (O 2 ), the photoresist pattern 314a is subjected to an ashing process. Therefore, the photoresist pattern 314a is removed. However, during this ashing treatment, oxygen and titanium react on the surface of the titanium film 310. Therefore, as shown in FIG. 5C, a titanium oxide (TiO) film 316 is inevitably formed on the titanium film 310. Such a titanium oxide film is originally an unnecessary film and is unintentionally formed. Further, the titanium oxide film contains a film formed of a different chemical structure such as TiO 2 , Ti 2 O 3 , Ti 3 O 5 or the like. This is also true for other metal oxide films. Further, the metal oxide film is a film containing the same elements as contained in the metal film. For example, when the metal film is a tantalum (Ta), which is a metal oxide film, compared with a tantalum oxide (Ta 2 O 5). Further, the titanium oxide film 316 may be partially sparsely formed on the titanium film 310.
接著，藉由使用SiCO膜圖案312a作為遮罩來進行蝕刻而移除一部分的鈦膜310。於此時，吾人能夠藉由實施本發明之蝕刻方法而同時移除氧化鈦膜316。即，蝕刻氣體為Cl2 氣體或HBr氣體其中之一與N2 氣體的混合氣體。又，N2 氣體比上總蝕刻氣體的流率不低於50%。由於使用此種條件，所以可有效移除例如氧化鈦膜316的金屬氧化膜，而同時可充分保持與作為下伏層之絕緣膜的選擇性。又，亦可充分保持與SiCO膜圖案312a(其為遮罩)的選擇性。又，此為適當：N2 氣體比上總蝕刻氣體的流率不超過80%。Next, a portion of the titanium film 310 is removed by etching using the SiCO film pattern 312a as a mask. At this time, the person can simultaneously remove the titanium oxide film 316 by performing the etching method of the present invention. That is, the etching gas is a mixed gas of one of Cl 2 gas or HBr gas and N 2 gas. And, N 2 gas ratio of the total flow rate of the etching gas is not less than 50%. Since such a condition is used, the metal oxide film such as the titanium oxide film 316 can be effectively removed while sufficiently maintaining the selectivity with the insulating film as the underlying layer. Further, the selectivity to the SiCO film pattern 312a (which is a mask) can be sufficiently maintained. Further, it is appropriate that the flow rate of the N 2 gas to the total etching gas does not exceed 80%.
因此，如圖5D所示，對鈦膜310實施圖案化，而使鈦膜310成為鈦膜圖案310a。又，可露出不被SiCO膜圖案313a所覆蓋之SiCO膜308的表面區域以及鈦膜圖案310a。即，吾人可獲得期望的蝕刻形狀。Therefore, as shown in FIG. 5D, the titanium film 310 is patterned, and the titanium film 310 is made into the titanium film pattern 310a. Further, the surface region of the SiCO film 308 not covered by the SiCO film pattern 313a and the titanium film pattern 310a can be exposed. That is, we can obtain a desired etching shape.
然後，在形成期望的多層互連之後，將基板切割成半導體晶片。以樹脂封裝每一個半導體晶片而使其完成為半導體裝置。The substrate is then diced into a semiconductor wafer after forming the desired multilayer interconnect. Each of the semiconductor wafers is packaged in a resin to be completed into a semiconductor device.
依此種方式，當藉由蝕刻而對鈦膜310執行圖案化時，實施上述本發明之蝕刻方法。即，使用Cl2 氣體或HBr氣體其中之一與N2 氣體的混合氣體作為蝕刻氣體。又，N2 氣體比上總蝕刻氣體的流率不低於50%。因此，吾人可有效移除例如氧化鈦膜316的金屬氧化膜，而同時可保持與絕緣膜(其為下伏層)的選擇性。換言之，蝕刻目標層的表面粗糙度會因為如圖10D所示之微遮罩的產生而被抑制。因此，依照本發明之蝕刻方法，吾人可充分移除金屬膜與金屬氧化膜，並且可保持與下伏絕緣膜的選擇性。In this manner, when the titanium film 310 is patterned by etching, the etching method of the present invention described above is carried out. That is, a mixed gas of one of Cl 2 gas or HBr gas and N 2 gas is used as an etching gas. Further, the flow rate of the N 2 gas to the total etching gas is not less than 50%. Therefore, it is possible to effectively remove the metal oxide film such as the titanium oxide film 316 while maintaining the selectivity with the insulating film which is the underlying layer. In other words, the surface roughness of the etch target layer is suppressed due to the generation of the micro mask as shown in FIG. 10D. Therefore, according to the etching method of the present invention, the metal film and the metal oxide film can be sufficiently removed, and the selectivity to the underlying insulating film can be maintained.
接著，將參考圖6A至6C來說明將本發明之蝕刻方法應用於閘極形成程序上的一實施例。Next, an embodiment in which the etching method of the present invention is applied to a gate forming process will be described with reference to FIGS. 6A to 6C.
圖6A顯示在半導體裝置之製造程序的中途，電晶體之閘極被形成在半導體基板上的狀態。即，其呈現下列狀態：在矽(Si)基板400上依序形成二氧化矽(SiO2 )膜402、鈦(Ti)膜404、多晶矽(Poly-Si)膜406、以及氮化矽(Si3 N4 )膜圖案408a。在本發明中，個別地，矽基板400相當於半導體基板，二氧化矽膜402相當於閘極絕緣膜，鈦膜404相當於金屬膜，多晶矽膜406相當於導電膜，而氮化矽膜圖案408a則相當於遮罩圖案。以下將詳細說明每一個元件。FIG. 6A shows a state in which the gate of the transistor is formed on the semiconductor substrate in the middle of the manufacturing process of the semiconductor device. That is, it exhibits a state in which a ceria (SiO 2 ) film 402, a titanium (Ti) film 404, a poly-Si film 406, and tantalum nitride (Si) are sequentially formed on the iridium (Si) substrate 400. 3 N 4 ) film pattern 408a. In the present invention, the germanium substrate 400 corresponds to a semiconductor substrate, the germanium dioxide film 402 corresponds to a gate insulating film, the titanium film 404 corresponds to a metal film, and the poly germanium film 406 corresponds to a conductive film, and the tantalum nitride film pattern 408a is equivalent to a mask pattern. Each component will be described in detail below.
矽基板400為一種由單晶矽所形成的基板。又，矽基板400亦可為絕緣層上覆矽(SOI，Silicon on Insulator)的基板、藍寶石上覆矽(SOS，Silicon on Sapphire)的基板或石英上覆矽(SOQ，Silicon on Quartz)的基板，而非整塊的矽基板。The germanium substrate 400 is a substrate formed of single crystal germanium. Further, the ruthenium substrate 400 may be a substrate on a silicon-on-insulator (SOI), a substrate on a sapphire-on-the-shelf (SOS), or a substrate on a quartz-on-silicon (SOQ) substrate. Instead of a monolithic substrate.
二氧化矽膜402為一種可作為在後續處理中實施圖案化之電晶體之閘極絕緣膜的薄膜。除了二氧化矽以外，吾人亦可使用於其中將氮導入薄膜的氮氧化膜，或例如氧化鋁(Al2 O3 )、氧化鉭(Ta2 O5 )、氧化鉿(HfO2 )、以及氧化鋯(ZrO3 )的高介電常數材料來作為閘極絕緣膜。The ruthenium dioxide film 402 is a film which can serve as a gate insulating film of a transistor which is patterned in a subsequent process. In addition to cerium oxide, we may also use an oxynitride film in which nitrogen is introduced into the film, or, for example, aluminum oxide (Al 2 O 3 ), cerium oxide (Ta 2 O 5 ), cerium oxide (HfO 2 ), and oxidation. A high dielectric constant material of zirconium (ZrO 3 ) is used as the gate insulating film.
鈦膜404為一種在後續處理中被圖案化並且成為電晶體之一部分閘極的薄膜。由於使用鈦膜作為一部分的閘極，所以可形成多金屬閘極。又，在本實施例中，鈦膜404為蝕刻目標層。然而，吾人可使用鋯(Zr)、鉿(Hf)、鋁(Al)、以及鉭(Ta)的金屬膜來作為金屬膜。此係因為鋯(Zr)、鉿(Hf)與鈦皆為屬於IV-A族的元素，而鋁(Al)及鉭(Ta)與鈦相同，皆被使用作為配線材料。本發明可應用在這些金屬膜上。又，上述金屬膜的氮化物亦可被使用作為金屬膜。即，上述金屬膜的氮化物為氮化鈦(TiN)、氮化鉭(TaN)、氮化鉿(HfN)、氮化鋯(ZrN)以及氮化鋁(AlN)。Titanium film 404 is a film that is patterned in a subsequent process and becomes part of the gate of the transistor. Since a titanium film is used as a part of the gate, a multi-metal gate can be formed. Further, in the present embodiment, the titanium film 404 is an etching target layer. However, a metal film of zirconium (Zr), hafnium (Hf), aluminum (Al), and tantalum (Ta) may be used as the metal film. This is because zirconium (Zr), hafnium (Hf) and titanium are all elements belonging to group IV-A, and aluminum (Al) and tantalum (Ta) are the same as titanium, and are used as wiring materials. The present invention can be applied to these metal films. Further, a nitride of the above metal film can also be used as a metal film. That is, the nitride of the metal film is titanium nitride (TiN), tantalum nitride (TaN), hafnium nitride (HfN), zirconium nitride (ZrN), and aluminum nitride (AlN).
多晶矽膜406為一種在後續處理中進行圖案化而成為電晶體之一部分閘極的薄膜。例如硼(B)以及磷(P)等等的雜質可被導入多晶矽膜406。例如鎢(W)以及鈦(Ti)等等的矽化膜可被堆疊在多晶矽膜406上。The polysilicon film 406 is a film that is patterned in a subsequent process to become part of the gate of the transistor. Impurities such as boron (B) and phosphorus (P) may be introduced into the polysilicon film 406. A vaporized film such as tungsten (W) and titanium (Ti) or the like may be stacked on the polysilicon film 406.
吾人可藉由將氮化矽膜蝕刻成期望的圖案而形成氮化矽膜圖案408a。氮化矽膜圖案408a可作為對多晶矽膜406以及鈦膜404進行圖案化的硬遮罩圖案。The tantalum nitride film pattern 408a can be formed by etching a tantalum nitride film into a desired pattern. The tantalum nitride film pattern 408a can serve as a hard mask pattern for patterning the polysilicon film 406 and the titanium film 404.
接著，使用氮化矽膜圖案408a作為遮罩而對多晶矽膜406進行蝕刻。此種蝕刻為一種乾式蝕刻處理，其係使用溴化氫(HBr)與氧(O2 )的混合氣體。因此，如圖6B所示，形成多晶矽膜圖案406a。然而，在此種蝕刻期間，包含在蝕刻氣體內的氧會在鈦膜404的表面上與鈦進行反應。因此，如圖6B所示，氧化鈦(TiO)膜410亦必然會形成在鈦膜404上。此種氧化鈦膜原本即為一種非必要的薄膜並且被無意地形成。又，氧化鈦膜包含由不同化學結構所形成的薄膜，例如TiO2 、Ti2 O3 、Ti3 O5 等等。此對於其他金屬氧化膜而言亦係成立的。又，金屬氧化膜為一種包含相同於金屬膜內所包含之元素的薄膜。例如，在金屬膜為鉭(Ta)的情況下，其金屬氧化膜則為氧化鉭(Ta2 O5 )。又，氧化鈦膜410可部分稀疏地形成在鈦膜404上。Next, the polysilicon film 406 is etched using the tantalum nitride film pattern 408a as a mask. This etching is a dry etching treatment using a mixed gas of hydrogen bromide (HBr) and oxygen (O 2 ). Therefore, as shown in FIG. 6B, a polysilicon film pattern 406a is formed. However, during such etching, oxygen contained in the etching gas reacts with titanium on the surface of the titanium film 404. Therefore, as shown in FIG. 6B, a titanium oxide (TiO) film 410 is also necessarily formed on the titanium film 404. Such a titanium oxide film is originally an unnecessary film and is unintentionally formed. Further, the titanium oxide film contains a film formed of a different chemical structure such as TiO 2 , Ti 2 O 3 , Ti 3 O 5 or the like. This is also true for other metal oxide films. Further, the metal oxide film is a film containing the same elements as contained in the metal film. For example, in the case where the metal film is tantalum (Ta), the metal oxide film is tantalum oxide (Ta 2 O 5 ). Further, the titanium oxide film 410 may be partially formed sparsely on the titanium film 404.
接著，使用氮化矽膜圖案408a以及多晶矽膜圖案406a作為遮罩來進行蝕刻而移除一部分的鈦膜404。換言之，一部分的鈦膜404被蝕刻，而氮化矽膜圖案408a則留在多晶矽膜圖案406a上。於此時，吾人可藉由實施本發明之蝕刻方法而同時移除氧化鈦膜410。即，蝕刻氣體為Cl2 氣體或HBr氣體其中之一與N2 氣體的混合氣體。又，N2 氣體比上總蝕刻氣體的流率不低於50%。由於使用此種條件，所以吾人可有效移除例如氧化鈦膜410的金屬氧化膜，而同時可充分保持與絕緣膜(其為下伏層)的選擇性。在此，亦可充分保持與氮化矽膜圖案408a(其為遮罩)的選擇性。又，此為適當：N2 氣體比上總蝕刻氣體的流率不超過80%。Next, a portion of the titanium film 404 is removed by etching using the tantalum nitride film pattern 408a and the polysilicon film pattern 406a as a mask. In other words, a portion of the titanium film 404 is etched while the tantalum nitride film pattern 408a remains on the polysilicon film pattern 406a. At this time, the titanium oxide film 410 can be simultaneously removed by the etching method of the present invention. That is, the etching gas is a mixed gas of one of Cl 2 gas or HBr gas and N 2 gas. Further, the flow rate of the N 2 gas to the total etching gas is not less than 50%. Since such a condition is used, it is possible to effectively remove the metal oxide film such as the titanium oxide film 410 while sufficiently maintaining the selectivity with the insulating film which is the underlying layer. Here, the selectivity to the tantalum nitride film pattern 408a (which is a mask) can be sufficiently maintained. Further, it is appropriate that the flow rate of the N 2 gas to the total etching gas does not exceed 80%.
因此。如圖6C所示，可露出不被多晶矽膜圖案406a所覆蓋之SiO2 膜402的表面區域。又，鈦膜404被圖案化而成為鈦膜圖案404a。亦即，吾人可獲得期望的蝕刻形狀。基於此，吾人可形成由鈦膜圖案404a以及多晶矽膜圖案406a之堆疊結構所形成的多金屬閘極。多金屬閘極具有可抑制空乏層(depleted layer)形成的優點，此空乏層會成為多晶矽閘極的問題。therefore. As shown in FIG. 6C, the surface area of the SiO 2 film 402 which is not covered by the polysilicon film pattern 406a can be exposed. Further, the titanium film 404 is patterned to form the titanium film pattern 404a. That is, we can obtain the desired etched shape. Based on this, a multi-metal gate formed of a stacked structure of the titanium film pattern 404a and the polysilicon film pattern 406a can be formed. The multi-metal gate has the advantage of suppressing the formation of a depleted layer, which can become a problem of polysilicon gates.
然後，在執行閘極絕緣膜的圖案化以及多層互連的形成等等之後，將基板切割成半導體晶片。以樹脂封裝每一個半導體晶片而使其完成為半導體裝置。Then, after performing patterning of the gate insulating film and formation of a multilayer interconnection or the like, the substrate is diced into a semiconductor wafer. Each of the semiconductor wafers is packaged in a resin to be completed into a semiconductor device.
依此種方式，當藉由蝕刻而對鈦膜404執行圖案化時，實施上述本發明之蝕刻方法。即，使用Cl2 氣體或HBr氣體其中之一與N2 氣體的混合氣體作為蝕刻氣體。又，N2 氣體比上總蝕刻氣體的流率不低於50%。因此，吾人可有效移除例如氧化鈦膜410的金屬氧化膜，而同時可保持與絕緣膜(其為下伏層)的選擇性。換言之，蝕刻目標層的表面粗糙度會因為如圖10D所示之微遮罩的產生而被抑制。因此，依照本發明之蝕刻方法，吾人可充分移除金屬膜與金屬氧化膜，並且可充分保持與下伏絕緣膜的選擇性。In this manner, when the titanium film 404 is patterned by etching, the etching method of the present invention described above is carried out. That is, using a mixed gas of Cl 2 gas or HBr gas wherein one of the N 2 gas as an etching gas. Further, the flow rate of the N 2 gas to the total etching gas is not less than 50%. Therefore, it is possible to effectively remove the metal oxide film such as the titanium oxide film 410 while maintaining the selectivity with the insulating film which is the underlying layer. In other words, the surface roughness of the etch target layer is suppressed due to the generation of the micro mask as shown in FIG. 10D. Therefore, according to the etching method of the present invention, the metal film and the metal oxide film can be sufficiently removed, and the selectivity to the underlying insulating film can be sufficiently maintained.
(評估結果)(evaluation result)
接著，將參考圖7A至7C來說明本發明的評估結果。Next, the evaluation results of the present invention will be explained with reference to Figs. 7A to 7C.
圖7A至7C係顯示在對處理目標實施習知技術以及對處理目標實施本發明之情況下之蝕刻目標層狀態的掃瞄式電子顯微鏡(SEM，scanning electron microscope)照片。7A to 7C are photographs showing a scanning electron microscope (SEM) of an etch target layer state in a case where a conventional technique is applied to a processing target and the present invention is applied to a processing target.
圖7A顯示處理目標的起始狀態。即，鈦膜504被形成在由低介電常數材料所形成的絕緣膜502上。氮化矽(Si3 N4 )膜圖案508a被形成在鈦膜504上。又，氧化鈦(TiO)膜506被形成在不被氮化矽膜圖案508a所覆蓋之鈦膜504的區域上。鈦膜504以及氧化鈦膜506為蝕刻目標層。Fig. 7A shows the initial state of the processing target. That is, the titanium film 504 is formed on the insulating film 502 formed of a low dielectric constant material. A tantalum nitride (Si 3 N 4 ) film pattern 508a is formed on the titanium film 504. Further, a titanium oxide (TiO) film 506 is formed on a region of the titanium film 504 which is not covered by the tantalum nitride film pattern 508a. The titanium film 504 and the titanium oxide film 506 are etching target layers.
圖7B顯示在對處於起始狀態之處理目標實施習知技術之蝕刻方法後的狀態。即，使用氯(Cl2 )與氬(Ar)的混合氣體，對處於起始狀態的處理目標進行蝕刻。氯的流率為40sccm，而氬的流率為200sccm。吾人可從圖7B瞭解到絕緣膜502的表面係粗糙的，且產生微遮罩。Fig. 7B shows the state after the etching method of the prior art is applied to the processing target in the initial state. That is, the treatment target in the initial state is etched using a mixed gas of chlorine (Cl 2 ) and argon (Ar). The flow rate of chlorine was 40 sccm, and the flow rate of argon was 200 sccm. As can be seen from FIG. 7B, the surface of the insulating film 502 is rough and a micro-mask is produced.
圖7C顯示在對處於起始狀態之處理目標實施本發明之蝕刻方法後的狀態。即，使用氯(Cl2 )與氮(N2 )的混合氣體，對處於起始狀態的處理目標進行蝕刻。氯的流率為40sccm，而氮的流率為200sccm。氮的含量比上混合氣體的總流率不低於50%。吾人可從圖7C瞭解到絕緣膜502的表面係平滑的，且不產生微遮罩。Fig. 7C shows a state after the etching method of the present invention is carried out on the processing target in the initial state. That is, a treatment target in an initial state is etched using a mixed gas of chlorine (Cl 2 ) and nitrogen (N 2 ). The flow rate of chlorine was 40 sccm, and the flow rate of nitrogen was 200 sccm. The nitrogen content is not less than 50% than the total flow rate of the upper mixed gas. It can be seen from Fig. 7C that the surface of the insulating film 502 is smooth and does not generate a micro-mask.
(徑向線縫隙天線設備的特性)(Characteristics of radial line slot antenna equipment)
接著，將參考圖8A至8B以及圖9A至9C來說明，使用徑向線縫隙天線法之平面天線部件的蝕刻設備(以下稱為徑向線縫隙天線設備)係適用於本發明之蝕刻方法。Next, an etching apparatus (hereinafter referred to as a radial line slot antenna apparatus) using a planar antenna member of the radial line slot antenna method will be described with reference to FIGS. 8A to 8B and FIGS. 9A to 9C, which is suitable for the etching method of the present invention.
圖8A與8B為徑向線縫隙天線設備與感應耦合電漿(ICP，Induced Coupled Plasma)設備(其為一種電漿蝕刻設備)的特性比較圖。在此，具體顯示電子密度與電子溫度的比較。8A and 8B are characteristic comparison diagrams of a radial line slot antenna device and an Inductive Coupled Plasma (ICP) device which is a plasma etching device. Here, a comparison of electron density and electron temperature is specifically shown.
圖8A顯示電子密度的比較。例如吾人可從圖8A觀察到徑向線縫隙天線設備在相同的最大功率(top power)下可呈現出較高的電子密度。Figure 8A shows a comparison of electron densities. For example, we can observe from Fig. 8A that the radial line slot antenna device can exhibit a higher electron density at the same top power.
圖8B顯示電子溫度的比較。例如吾人可從圖8B觀察到徑向線縫隙天線設備在相同的最大功率(top power)下可呈現出較低的電子溫度。Figure 8B shows a comparison of electron temperatures. For example, we can observe from Figure 8B that the radial line slot antenna device can exhibit a lower electron temperature at the same top power.
因此，吾人可瞭解徑向線縫隙天線設備能夠產生高電子密度與低電子溫度之電漿所激發的微波。此表示徑向線縫隙天線設備在蝕刻形狀的可控制性方面為較佳。Therefore, we can understand that the radial line slot antenna device can generate microwaves excited by plasma with high electron density and low electron temperature. This means that the radial line slot antenna device is preferable in terms of controllability of the etched shape.
圖9A與9B為顯示徑向線縫隙天線設備與ICP設備的特性比較圖。在此，具體顯示蝕刻氣體變成為離子的解離度(disassociation degree)比較。9A and 9B are graphs showing characteristics comparison of a radial line slot antenna device and an ICP device. Here, it is specifically shown that the etching gas becomes a disassociation degree comparison of ions.
圖9A係光發射光譜(OES，Optical Emission Spectroscopy)的結果。例如吾人可從圖9A瞭解到徑向線縫隙天線設備相較於ICP可具有較高的離子(N2 + 、Cl2 + 、Cl+ )相對強度。Fig. 9A is a result of Optical Emission Spectroscopy (OES). For example, we can see from FIG. 9A that the radial line slot antenna device can have a higher relative intensity of ions (N 2 + , Cl 2 + , Cl + ) than ICP.
圖9B與9C顯示依據OES之徑向線縫隙天線設備與ICP設備之離子/原子團峰值的最大功率相依性。Figures 9B and 9C show the maximum power dependence of the ion/atom peak of the radial line slot antenna device and the ICP device in accordance with OES.
圖9B顯示N2 + (離子)比上N2 (原子團)的比值。又，徑向線縫隙天線設備在相同功率下可呈現出較高的離子比值。Figure 9B shows the ratio of N 2 + (ion) to upper N 2 (atomic group). Also, the radial line slot antenna device can exhibit a higher ion ratio at the same power.
圖9C顯示Cl2 + (離子)比上Cl2 (原子團)的比值。又，徑向線縫隙天線設備在相同功率下可呈現出較高的離子比值。Figure 9C shows the ratio of Cl 2 + (ion) to Cl 2 (atomic group). Also, the radial line slot antenna device can exhibit a higher ion ratio at the same power.
因此，吾人可瞭解徑向線縫隙天線設備具有自蝕刻氣體成為離子的高解離度。基於此，吾人亦能夠瞭解到可依據徑向線縫隙天線設備而將高流率的氮添加至蝕刻氣體中。Therefore, we can understand that the radial line slot antenna device has a high degree of dissociation from the etching gas to ions. Based on this, we can also understand that high flow rate nitrogen can be added to the etching gas according to the radial line slot antenna device.
本發明之較佳實施例已參考隨附圖式而進行說明。很明顯地，本發明並非限於這些實施例。熟習本項技藝者可明白在請求項的範圍內可輕易進行各種變化與修改。The preferred embodiments of the present invention have been described with reference to the accompanying drawings. It is obvious that the invention is not limited to these embodiments. Those skilled in the art will appreciate that various changes and modifications can be readily made within the scope of the claims.
例如，已在較佳實施例中說明用以將本發明應用在層間絕緣膜形成程序以及閘極形成程序上的範例。然而，本發明亦可應用在其他程序上。For example, an example for applying the present invention to an interlayer insulating film forming process and a gate forming process has been described in the preferred embodiment. However, the present invention can also be applied to other programs.
又，亦在較佳實施例中說明使用徑向線縫隙天線設備作為蝕刻設備的一範例。然而，吾人亦可使用其他的設備。Also, an example in which a radial line slot antenna device is used as an etching device is also described in the preferred embodiment. However, we can also use other equipment.
22．．．蝕刻設備twenty two. . . Etching equipment
24．．．處理容器twenty four. . . Processing container
26．．．台座26. . . Pedestal
28．．．支柱28. . . pillar
30．．．閘閥30. . . gate
32．．．排放出口32. . . Emission outlet
34．．．壓力控制閥34. . . Pressure control valve
36．．．真空幫浦36. . . Vacuum pump
38．．．排放路徑38. . . Emission path
40．．．頂板40. . . roof
42．．．密封部件42. . . Sealing part
44．．．電漿形成單元44. . . Plasma forming unit
46．．．平面天線部件46. . . Planar antenna component
48．．．慢波結構48. . . Slow wave structure
50．．．波導盒50. . . Wave box
52．．．冷卻夾套52. . . Cooling jacket
54．．．同軸波導器54. . . Coaxial waveguide
54A．．．外管54A. . . Outer tube
54B．．．內纜線54B. . . Inner cable
56．．．模態轉換器56. . . Modal converter
58．．．波導器58. . . Waveguide
60．．．微波產生器60. . . Microwave generator
62．．．微波照射孔62. . . Microwave irradiation hole
64．．．氣體供應單元64. . . Gas supply unit
66．．．氣體流道66. . . Gas flow path
66a．．．氣體流道66a. . . Gas flow path
68．．．氣體噴出孔68. . . Gas ejection hole
70．．．噴淋頭部70. . . Sprinkler head
72．．．開孔72. . . Opening
74．．．氣體通道74. . . Gas passage
76．．．閥76. . . valve
78．．．流率控制器78. . . Flow rate controller
80A．．．Cl2 氣體源80A. . . Cl 2 gas source
80B．．．N2 氣體源80B. . . N 2 gas source
82．．．揚升銷82. . . Promotion
84．．．可延展式伸縮囊84. . . Expandable bellows
86．．．揚升桿86. . . Lift pole
88．．．插銷孔88. . . Pin hole
90．．．加熱單元90. . . Heating unit
92．．．電阻加熱器92. . . Resistance heater
94．．．電線94. . . wire
96．．．加熱器電源96. . . Heater power supply
98．．．導線98. . . wire
100．．．靜電夾頭100. . . Electrostatic chuck
102．．．電線102. . . wire
104．．．直流電源104. . . DC power supply
106．．．高頻電源106. . . High frequency power supply
108．．．控制單元108. . . control unit
110．．．記憶媒體110. . . Memory media
200．．．矽基板200. . .矽 substrate
202．．．加氧碳化矽膜202. . . Oxygenated niobium carbide film
204．．．鈦膜204. . . Titanium film
206．．．氧化鈦膜206. . . Titanium oxide film
300．．．矽基板300. . .矽 substrate
302．．．二氧化矽膜302. . . Ceria film
304．．．銅互連304. . . Copper interconnect
306．．．碳氮化矽膜306. . . Carbonitride film
308．．．加氧碳化矽膜308. . . Oxygenated niobium carbide film
310．．．鈦膜310. . . Titanium film
310a．．．鈦膜圖案310a. . . Titanium film pattern
312．．．加氧碳化矽膜312. . . Oxygenated niobium carbide film
312a．．．加氧碳化矽膜圖案312a. . . Oxygenated tantalum film pattern
314a．．．光阻圖案314a. . . Resistive pattern
316．．．氧化鈦膜316. . . Titanium oxide film
400．．．矽基板400. . .矽 substrate
402．．．二氧化矽膜402. . . Ceria film
404．．．鈦膜404. . . Titanium film
404a．．．鈦膜圖案404a. . . Titanium film pattern
406．．．多晶矽膜406. . . Polycrystalline germanium film
406a．．．多晶矽膜圖案406a. . . Polycrystalline film pattern
408a．．．氮化矽膜圖案408a. . . Tantalum nitride film pattern
410．．．氧化鈦膜410. . . Titanium oxide film
502．．．絕緣膜502. . . Insulating film
504．．．鈦膜504. . . Titanium film
506．．．氧化鈦膜506. . . Titanium oxide film
508a．．．氮化矽膜圖案508a. . . Tantalum nitride film pattern
500．．．矽基板500. . .矽 substrate
502．．．二氧化矽膜502. . . Ceria film
504．．．銅互連504. . . Copper interconnect
506．．．碳氮化矽膜506. . . Carbonitride film
508．．．加氧碳化矽膜508. . . Oxygenated niobium carbide film
510．．．鈦膜510. . . Titanium film
512．．．加氧碳化矽膜512. . . Oxygenated niobium carbide film
512a．．．加氧碳化矽膜圖案512a. . . Oxygenated tantalum film pattern
514a．．．光阻圖案514a. . . Resistive pattern
516．．．氧化鈦膜516. . . Titanium oxide film
516a．．．蝕刻殘留物516a. . . Etch residue
518．．．開放部518. . . Open department
S．．．晶圓S. . . Wafer
圖1係顯示用以執行本發明之蝕刻設備之一範例的橫剖面圖；1 is a cross-sectional view showing an example of an etching apparatus for carrying out the present invention;
圖2係顯示圖1所示之蝕刻設備之平面天線部件的平面圖；Figure 2 is a plan view showing a planar antenna member of the etching apparatus shown in Figure 1;
圖3係顯示圖1所示之蝕刻設備之噴淋頭部的平面圖；Figure 3 is a plan view showing the shower head of the etching apparatus shown in Figure 1;
圖4係本發明之蝕刻方法之處理目標的部分剖面圖；Figure 4 is a partial cross-sectional view showing the processing target of the etching method of the present invention;
圖5A至5D係顯示本發明之半導體裝置之製造方法之一實施例的過程橫剖面圖；5A to 5D are cross-sectional views showing processes of an embodiment of a method of fabricating a semiconductor device of the present invention;
圖6A至6C係顯示本發明之半導體裝置之製造方法之另一實施例的過程橫剖面圖；6A to 6C are cross-sectional views showing processes of another embodiment of a method of fabricating a semiconductor device of the present invention;
圖7A至7C係顯示本發明之評估結果的SEM照片；7A to 7C are SEM photographs showing the evaluation results of the present invention;
圖8A至8B係顯示關於徑向線縫隙天線裝置之電子密度與電子溫度的特性圖；8A to 8B are graphs showing characteristics of electron density and electron temperature with respect to a radial line slot antenna device;
圖9A至9C係顯示關於徑向線縫隙天線裝置之變成為離子之解離度的特性圖；及9A to 9C are characteristic diagrams showing the degree of dissociation of ions into a radial line slot antenna device; and
圖10A至10D係顯示先前技術之半導體裝置之製造方法的過程橫剖面圖。10A to 10D are process cross-sectional views showing a method of manufacturing a semiconductor device of the prior art.
22．．．蝕刻設備twenty two. . . Etching equipment
24．．．處理容器twenty four. . . Processing container
26．．．台座26. . . Pedestal
28．．．支柱28. . . pillar
30．．．閘閥30. . . gate
32．．．排放出口32. . . Emission outlet
34．．．壓力控制閥34. . . Pressure control valve
36．．．真空幫浦36. . . Vacuum pump
38．．．排放路徑38. . . Emission path
40．．．頂板40. . . roof
42．．．密封部件42. . . Sealing part
44．．．電漿形成單元44. . . Plasma forming unit
46．．．平面天線部件46. . . Planar antenna component
48．．．慢波結構48. . . Slow wave structure
50．．．波導盒50. . . Wave box
52．．．冷卻夾套52. . . Cooling jacket
54．．．同軸波導器54. . . Coaxial waveguide
54A．．．外管54A. . . Outer tube
54B．．．內纜線54B. . . Inner cable
56．．．模態轉換器56. . . Modal converter
58．．．波導器58. . . Waveguide
60．．．微波產生器60. . . Microwave generator
62．．．微波照射孔62. . . Microwave irradiation hole
64．．．氣體供應單元64. . . Gas supply unit
66．．．氣體流道66. . . Gas flow path
66a．．．氣體流道66a. . . Gas flow path
68．．．氣體噴出孔68. . . Gas ejection hole
70．．．噴淋頭部70. . . Sprinkler head
72．．．開孔72. . . Opening
74．．．氣體通道74. . . Gas passage
76．．．閥76. . . valve
78．．．流率控制器78. . . Flow rate controller
80A．．．Cl2 氣體源80A. . . Cl 2 gas source
80B．．．N2 氣體源80B. . . N 2 gas source
82．．．揚升銷82. . . Promotion
84．．．可延展式伸縮囊84. . . Expandable bellows
86．．．揚升桿86. . . Lift pole
88．．．插銷孔88. . . Pin hole
90．．．加熱單元90. . . Heating unit
92．．．電阻加熱器92. . . Resistance heater
94．．．電線94. . . wire
96．．．加熱器電源96. . . Heater power supply
98．．．導線98. . . wire
100．．．靜電夾頭100. . . Electrostatic chuck
102．．．電線102. . . wire
104．．．直流電源104. . . DC power supply
106．．．高頻電源106. . . High frequency power supply
108．．．控制單元108. . . control unit
110．．．記憶媒體110. . . Memory media
S．．．晶圓S. . . Wafer
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| WO2009084194A1 (en) | 2009-07-09 |
| TW200947545A (en) | 2009-11-16 |
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