TWI422985B - Nano-lithography system and nano-lithography method - Google Patents
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- 238000005329 nanolithography Methods 0.000 title claims description 64
- 238000000034 method Methods 0.000 title claims description 30
- 239000000758 substrate Substances 0.000 claims description 83
- 239000000463 material Substances 0.000 claims description 71
- 239000000523 sample Substances 0.000 claims description 65
- 238000000576 coating method Methods 0.000 claims description 59
- 239000011248 coating agent Substances 0.000 claims description 58
- 238000002844 melting Methods 0.000 claims description 6
- 230000008018 melting Effects 0.000 claims description 6
- 239000007850 fluorescent dye Substances 0.000 claims description 3
- 230000001747 exhibiting effect Effects 0.000 claims description 2
- 239000011343 solid material Substances 0.000 claims description 2
- 238000010438 heat treatment Methods 0.000 description 13
- 238000010586 diagram Methods 0.000 description 11
- 238000004519 manufacturing process Methods 0.000 description 7
- 238000005516 engineering process Methods 0.000 description 5
- 238000001459 lithography Methods 0.000 description 5
- 239000011344 liquid material Substances 0.000 description 3
- 239000000155 melt Substances 0.000 description 2
- 239000007787 solid Substances 0.000 description 2
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- 238000010420 art technique Methods 0.000 description 1
- 238000007598 dipping method Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005286 illumination Methods 0.000 description 1
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Description
本發明係關於一種奈米微影系統以及奈米微影方法,並且特別地,本發明係關於一種以聚焦光束熔化材料以塗佈材料於基板上之奈米微影系統以及奈米微影方法。The present invention relates to a nano lithography system and a nano lithography method, and in particular, the present invention relates to a nano lithography system for melting a material with a focused beam to coat a material on a substrate, and a nano lithography method. .
近年來有關奈米科技之研究遍及各界,其相關研究領域包羅萬象,可應用於多種不同產業。奈米微影技術為奈米製造技術中相當受到矚目的技術之一,其可於基板上製作出極小的結構以及圖樣而形成微裝置。傳統的奈米微影技術,係利用沾墨的方式或電熱絲加熱方式將材料設置於探針上,藉由探針接觸基板以將材料塗佈於基板上。In recent years, research on nanotechnology has spread all over the world, and its related research fields are all-encompassing and can be applied to many different industries. The nano lithography technology is one of the most attractive technologies in the nano manufacturing technology, which can form a micro device by making a very small structure and pattern on a substrate. The conventional nano lithography technique uses a dipping method or a heating wire heating method to place a material on a probe, and the probe contacts the substrate to apply the material to the substrate.
請參閱圖一A以及圖一B,圖一A以及圖一B係繪示先前技術之奈米微影技術的示意圖。如圖一A所示,微影裝置1屬於沾筆式的奈米微影技術,其包含探針10,並且探針10上塗佈有液態的材料12。探針10可接觸基板,因此液態的材料12可附著於基板上而完成奈米微影。由於材料12係先附著於探針10上再轉印到基板上,因此最終於基板上所呈現之結構以及圖樣將會具有較大的線寬。此外,若塗佈發生錯誤時,基板所塗佈上之圖案或結構無法被更改。Please refer to FIG. 1A and FIG. 1B. FIG. 1A and FIG. 1B are schematic diagrams showing the prior art nano lithography technology. As shown in FIG. A, the lithography apparatus 1 is a pen-type nano lithography technique that includes a probe 10, and the probe 10 is coated with a liquid material 12. The probe 10 can contact the substrate, so that the liquid material 12 can be attached to the substrate to complete the nano-lithography. Since the material 12 is first attached to the probe 10 and then transferred to the substrate, the structure and pattern ultimately presented on the substrate will have a larger line width. In addition, if an error occurs in the coating, the pattern or structure coated on the substrate cannot be changed.
如圖一B所示,微影裝置2屬於加熱式的奈米微影技術。與上述先前技術不同的是,微影裝置2之探針20上並未附著液態的材料,而是探針20本身即以欲塗佈於基板上之材料所構成。探針20係固態的塗佈材料,電熱絲22可設置於探針20中以加熱探針20。當探針20被電熱絲22加熱至熔化狀態時,探針20可接觸基板而將部分熔化狀態之材料塗佈於基板上。微影裝置2於基板上所形成之結構以及圖樣根據探針20之尖端大小可決定其線寬。然而,由於每根探針20中均需一電熱絲,並且同時需要一電路以提供電流至電熱絲,因此其製作成本較高。同樣地,若塗佈發生錯誤時,基板所塗佈上之圖案或結構也無法被更改。As shown in FIG. 1B, the lithography apparatus 2 belongs to a heated nano lithography technique. Unlike the prior art described above, the liquid material is not attached to the probe 20 of the lithography apparatus 2, but the probe 20 itself is constructed of a material to be applied to the substrate. The probe 20 is a solid coating material, and a heating wire 22 may be disposed in the probe 20 to heat the probe 20. When the probe 20 is heated to the molten state by the heating wire 22, the probe 20 may contact the substrate to apply a partially melted material to the substrate. The structure and pattern formed on the substrate by the lithography apparatus 2 can determine the line width according to the tip size of the probe 20. However, since a heating wire is required in each of the probes 20, and a circuit is required at the same time to supply current to the heating wire, the manufacturing cost thereof is high. Similarly, if an error occurs in the coating, the pattern or structure on which the substrate is applied cannot be changed.
上述各先前技術於塗佈材料於基板上時並無法直接觀察塗佈狀況,因此很容易發生塗佈錯誤。同時,塗佈錯誤後也無法修正錯誤之處而造成浪費。另外,上述先前技術用於大面積塗佈時需設置多根探針,對加熱式的奈米微影技術而言需對每根探針提供電熱絲以及電路,因此將會增加製程的複雜度以及製造成本。Each of the above prior art techniques cannot directly observe the coating condition when the coating material is applied to the substrate, and thus coating errors easily occur. At the same time, after the coating error, it is impossible to correct the error and cause waste. In addition, the above prior art is required to provide a plurality of probes for large-area coating, and it is necessary to provide a heating wire and a circuit for each probe for the heated nano lithography technology, thereby increasing the complexity of the process. And manufacturing costs.
本發明之一範疇在於提供一種奈米微影系統,其係以聚焦光束熔化材料以塗佈材料於基板上,以解決上述問題。One aspect of the present invention is to provide a nanolithography system that melts a material with a focused beam to coat a material onto a substrate to solve the above problems.
根據一具體實施例,本發明之奈米微影系統包含塗佈結構以及光束聚焦裝置。塗佈結構係以固體狀材料所製成,並且塗佈結構上具有接觸點可用以接觸基板。光束聚焦裝置可發出光束並進一步聚焦光束於塗佈結構之接觸點上,進而加熱接觸點上之材料使其呈現熔化狀態。當接觸點上之材料呈現熔化狀態並且接觸基板時,基板上會附著部分熔化之材料而達到微影效果。According to a specific embodiment, the nanolithography system of the present invention comprises a coating structure and a beam focusing device. The coating structure is made of a solid material, and the coating structure has contact points for contacting the substrate. The beam focusing device emits a beam of light and further focuses the beam onto the contact point of the coating structure, thereby heating the material at the contact point to assume a molten state. When the material on the contact point is in a molten state and contacts the substrate, a partially melted material adheres to the substrate to achieve a lithographic effect.
於本具體實施例中,塗佈結構係一探針,並且接觸點係探針之尖端。於另一具體實施例中,塗佈結構可為平面結構,並且接觸點可為平面結構與基板接觸之表面上的多個接觸點。In this embodiment, the coating structure is a probe and the point of contact is the tip of the probe. In another embodiment, the coating structure can be a planar structure and the point of contact can be a plurality of points of contact on the surface of the planar structure in contact with the substrate.
本發明之一範疇在於提供一種奈米微影方法,以光束加熱方式使材料易於塗佈於基板上。One aspect of the present invention is to provide a nanolithography method for easily coating a material onto a substrate by means of beam heating.
根據一具體實施例,本發明之奈米微影方法包含下列步驟:將光束聚焦於以一材料製成之塗佈結構的聚焦點上,使聚焦點呈現熔化狀態;以及,將呈現熔化狀態的聚焦點接觸基板以塗佈材料於基板上。於另一具體實施例中,上述步驟之順序也可互相調換,亦即,先將聚焦點接觸基板,再聚焦光束於聚焦點上以加熱熔化聚焦點上之材料。According to a specific embodiment, the nanolithography method of the present invention comprises the steps of focusing a beam of light onto a focus point of a coating structure made of a material to cause the focus point to assume a molten state; and, to exhibit a molten state. The focus point contacts the substrate to coat the material on the substrate. In another embodiment, the sequence of the above steps may also be interchanged, that is, the focus point is first contacted with the substrate, and then the beam is focused on the focus point to heat the material on the focus point.
同樣地,上述塗佈結構可為探針,並且聚焦點可為探針之尖端。另一方面,塗佈結構亦可為平面結構,並且聚焦點可為平面結構與基板接觸之表面上的多個接觸點。Likewise, the coating structure described above can be a probe and the focus point can be the tip of the probe. Alternatively, the coating structure can be a planar structure, and the focus point can be a plurality of contact points on the surface of the planar structure in contact with the substrate.
關於本發明之優點與精神可以藉由以下的發明詳述及所附圖式得到進一步的瞭解。The advantages and spirit of the present invention will be further understood from the following detailed description of the invention.
請參閱圖二,圖二係繪示根據本發明之一具體實施例之奈米微影系統3的示意圖。如圖二所示,奈米微影系統3係用以塗佈一材料於基板4上。奈米微影系統3包含塗佈裝置30以及光束聚焦裝置32,其中,塗佈裝置30進一步包含承載構件300以及設置於承載構件300上之第一探針302。塗佈裝置30之承載構件300於實際應用中可根據使用者所設定之圖樣移動,致使第一探針302之接觸點3020接觸基板4並於基板4上移動。一般而言,探針係以其尖端作為接觸點以接觸基板。Referring to FIG. 2, FIG. 2 is a schematic diagram of a nano-lithography system 3 according to an embodiment of the present invention. As shown in FIG. 2, the nanolithography system 3 is used to coat a material on the substrate 4. The nanolithography system 3 includes a coating device 30 and a beam focusing device 32, wherein the coating device 30 further includes a carrier member 300 and a first probe 302 disposed on the carrier member 300. The carrier member 300 of the coating device 30 can be moved according to the pattern set by the user in practical applications, so that the contact point 3020 of the first probe 302 contacts the substrate 4 and moves on the substrate 4. In general, the probe has its tip as a contact point to contact the substrate.
於本具體實施例中,第一探針302係以欲塗佈於基板上之材料所構成。光束聚焦裝置32包含第一發光單元320以及第一透鏡322,其中,第一發光單元320可發出光束,並且光束可經由第一透鏡322聚焦於第一探針302之接觸點3020上以加熱接觸點3020及其周圍的材料。光束聚焦裝置32於實務中所產生之光束可為,但不受限於,雷射光束。In this embodiment, the first probe 302 is constructed of a material to be applied to a substrate. The beam focusing device 32 includes a first lighting unit 320 and a first lens 322, wherein the first lighting unit 320 can emit a light beam, and the light beam can be focused on the contact point 3020 of the first probe 302 via the first lens 322 to heat the contact. Point 3020 and the materials around it. The beam produced by the beam focusing device 32 in practice may be, but is not limited to, a laser beam.
當光束聚焦裝置32聚焦光束於接觸點3020時,接觸點3020以及其周圍之材料將會被加熱,並且,當接觸點3020以及其周圍之材料被加熱到材料的熔點時,接觸點3020以及其周圍之材料將呈現熔化狀態。接著,呈現熔化狀態的接觸點3020接觸基板4時,便可將材料塗佈於基板4之表面上。When the beam focusing device 32 focuses the beam at the contact point 3020, the contact point 3020 and the material surrounding it will be heated, and when the contact point 3020 and the material surrounding it are heated to the melting point of the material, the contact point 3020 and its The surrounding material will be in a molten state. Next, when the contact point 3020 in a molten state contacts the substrate 4, the material can be applied onto the surface of the substrate 4.
於本具體實施例中,探針302之接觸點3020係先被光束聚焦加熱至熔化狀態再與基板4接觸,進而塗佈材料於基板4上。然而,於實務中,上述製程順序亦可根據使用者或設計者需求而有不同,舉例而言,探針之接觸點(尖端)可先接觸基板,光束聚焦裝置再聚焦光束至接觸點上以熔化接觸點及其周圍之材料,進而塗佈材料於基板上。In the present embodiment, the contact point 3020 of the probe 302 is first heated by the focus of the beam to a molten state and then contacted with the substrate 4, thereby coating the material on the substrate 4. However, in practice, the above process sequence may also vary according to the needs of the user or the designer. For example, the contact point (tip) of the probe may first contact the substrate, and the beam focusing device focuses the beam to the contact point. The material at the contact point and its surroundings is melted, and the material is coated on the substrate.
由於以光束聚焦的方式係局部加熱第一探針302之尖端,可避免於第一探針302上製作電熱絲以及電路(如同先前技術所揭露)進而簡化第一探針302的製作過程以及成本。此外,由於第一探針302本身維持固態,僅尖端部分呈熔化狀態,因此本具體實施例之奈米微影系統3於基板4上所形成之結構的線寬,可由第一探針302之尖端尺寸以及光束聚焦形成的聚焦光點尺寸所決定。Since the tip of the first probe 302 is locally heated by focusing the beam, the heating wire and the circuit on the first probe 302 can be avoided (as disclosed in the prior art) to simplify the fabrication process and cost of the first probe 302. . In addition, since the first probe 302 itself maintains a solid state and only the tip end portion is in a molten state, the line width of the structure formed on the substrate 4 by the nano lithography system 3 of the present embodiment can be made by the first probe 302. The size of the tip and the size of the focused spot formed by the focus of the beam are determined.
請注意,於實務中,光束聚焦裝置可發出多道光束聚焦於一接觸點或多個接觸點。舉例而言,請參閱圖三,圖三係繪示根據本發明之另一具體實施例之奈米微影系統3之示意圖。如圖三所示,本具體實施例與上一具體實施例不同處,在於本具體實施例之光束聚焦裝置32進一步包含第二發光單元324以及第二透鏡326,其中,自第二發光單元324所發出光束可透過第二透鏡326聚焦於第一探針302之接觸點3020。Please note that in practice, the beam focusing device can emit multiple beams of light to focus on one contact point or multiple contact points. For example, please refer to FIG. 3 , which is a schematic diagram of a nano lithography system 3 according to another embodiment of the present invention. As shown in FIG. 3, the specific embodiment differs from the previous embodiment in that the beam focusing device 32 of the specific embodiment further includes a second lighting unit 324 and a second lens 326, wherein the second lighting unit 324 The emitted light beam can be focused by the second lens 326 to the contact point 3020 of the first probe 302.
於本具體實施例中,第一發光單元320所發出之光束與第二發光單元324所發出之光束自不同方向聚焦於接觸點3020上。於實務中,第一發光單元320所發出之光束與第二發光單元324所發出之光束也可聚焦於不同位置。舉例而言,於另一具體實施例中,塗佈裝置30也可進一步包含第二探針,第一發光單元320所發出的光束可聚焦於第一探針302之尖端並且第二發光單元324所發出之光束可聚焦於第二探針之尖端,以同時加熱第一探針302之尖端以及第二探針之尖端。In the present embodiment, the light beam emitted by the first light emitting unit 320 and the light beam emitted by the second light emitting unit 324 are focused on the contact point 3020 from different directions. In practice, the light beam emitted by the first light emitting unit 320 and the light beam emitted by the second light emitting unit 324 can also be focused at different positions. For example, in another specific embodiment, the coating device 30 may further include a second probe, and the light beam emitted by the first light emitting unit 320 may be focused on the tip end of the first probe 302 and the second light emitting unit 324 The emitted beam can be focused on the tip of the second probe to simultaneously heat the tip of the first probe 302 and the tip of the second probe.
根據另一具體實施例,光束聚焦裝置也可利用相位調製器接收發光單元所發出之光束並調整其相位。此外,相位調製器也可接收發光單元所發出之光束並進一步形成多個聚焦點,因此,本具體實施例僅使用一發光單元即可產生多個聚焦點。According to another embodiment, the beam focusing device can also receive the beam emitted by the illumination unit and adjust its phase using a phase modulator. In addition, the phase modulator can also receive the light beam emitted by the light emitting unit and further form a plurality of focus points. Therefore, the present embodiment can generate a plurality of focus points using only one light emitting unit.
如上所述,聚焦多道光束於多個探針之尖端上的方法可通用於大面積之元件之製作,其可避免對每個探針分別製作電熱絲以及電路之複雜製程。此外,塗佈裝置並不限定以探針方式對基板進行塗佈,而可以其他結構進行,例如,以平面結構對基板進行壓印製程。As described above, the method of focusing multiple beams onto the tips of a plurality of probes can be used for the fabrication of large-area components, which avoids the complicated process of fabricating the heating wires and circuits for each of the probes. Further, the coating device is not limited to coating the substrate by a probe method, but may be carried out in other structures, for example, by imprinting the substrate in a planar structure.
請參閡圖四,圖四係繪示根據本發明之另一具體實施例之奈米微影系統5的示意圖。如圖四所示,奈米微影系統5係用以塗佈一材料於基板6上,並且包含塗佈裝置50以及光束聚焦裝置52。塗佈裝置50進一步包含承載構件500以及設置於承載構件500上之平面結構502,其中,平面結構502係以欲塗佈於基板6之材料所構成,並且其包含聚焦點5020。請注意,於實務中,聚焦點5020之數量及位置係根據使用者或設訐者需求而定,並不限於本具體實施例。Referring to Figure 4, Figure 4 is a schematic diagram of a nanolithography system 5 in accordance with another embodiment of the present invention. As shown in FIG. 4, the nanolithography system 5 is used to coat a material on the substrate 6, and includes a coating device 50 and a beam focusing device 52. The coating device 50 further includes a carrier member 500 and a planar structure 502 disposed on the carrier member 500, wherein the planar structure 502 is constructed of a material to be applied to the substrate 6, and which includes a focus point 5020. Please note that in practice, the number and location of the focus points 5020 are based on the needs of the user or the designer and are not limited to this embodiment.
於本具體實施例中,光束聚焦裝置52進一步包含發光單元520以及透鏡522。發光單元520可發出光束,並且此光束可經透鏡522而聚焦於聚焦點5020之上。當光束(例如,雷射光束)聚焦於聚焦點5020上時,聚焦點5020及其周圍之材料會被加熱,並且當聚焦點5020及其周圍之材料被加熱至熔點時材料會呈現熔化狀態。接著,塗佈裝置50可將平面結構502壓印至基板6之上致使接觸點5020接觸基板6,進而塗佈材料於基板6之上。In the present embodiment, beam focusing device 52 further includes a lighting unit 520 and a lens 522. Light unit 520 can emit a beam of light that can be focused over focus point 5020 via lens 522. When a beam of light (e.g., a laser beam) is focused on focus point 5020, the material at focus point 5020 and its surroundings is heated, and the material will assume a molten state when focus point 5020 and its surrounding material are heated to a melting point. Next, the coating device 50 can imprint the planar structure 502 onto the substrate 6 such that the contact point 5020 contacts the substrate 6, and the coating material is coated on the substrate 6.
於實務中,上述各具體實施例之探針或平面結構均可於製作過程中摻入螢光染劑。當光束聚焦於探針或平面結構之聚焦點上時,可同時激發材料中的螢光染劑致使材料發出螢光。因此,若塗佈材料過程發生錯誤時,使用者可及早發現並處理錯誤。In practice, the probe or planar structure of each of the above embodiments may incorporate a fluorescent dye during the fabrication process. When the beam is focused on the focus of the probe or planar structure, the phosphor in the material can be simultaneously excited to cause the material to fluoresce. Therefore, if an error occurs in the process of coating the material, the user can find and handle the error early.
此外,塗佈於錯誤位置之材料亦可藉由本發明之奈米微影系統清除錯誤部分。請參閱圖五,圖五係繪示根據另一具體實施例之奈米微影系統7清除基板8上塗佈錯誤之材料80的示意圖。In addition, the material applied to the wrong location can also be used to remove the erroneous portion by the nanolithography system of the present invention. Referring to FIG. 5, FIG. 5 is a schematic diagram showing the nano-lithography system 7 according to another embodiment for removing the material 80 coated on the substrate 8.
如圖五所示,奈米微影系統7具有塗佈裝置70以及光束聚焦裝置72,並且塗佈裝置70具有承載構件700以及設置於承載構件700上之探針702。於本具體實施例中,奈米微影系統7之各單元之功能係與上述具體實施例之相對應單元大致上相同,於此不再贅述。As shown in FIG. 5, the nanolithography system 7 has a coating device 70 and a beam focusing device 72, and the coating device 70 has a carrier member 700 and a probe 702 disposed on the carrier member 700. In the present embodiment, the functions of the units of the nano-lithography system 7 are substantially the same as those of the above-described specific embodiments, and details are not described herein again.
然而與上述具體實施例不同處,在於本具體實施例之光束聚焦裝置72所發出之光束係聚焦於基板8之材料80上,以熔化基板8上之材料80。探針702可接觸呈熔化狀態之材料80。接著,於探針702接觸呈熔化狀態之材料80後,光束聚焦裝置72停止光束聚焦使原本呈現熔化狀態之材料80降溫並重新固化於探針702上。之後,探針702移開時可帶走與探針702接觸之材料80。藉此,基板8上塗佈錯誤之材料80可被清除。請注意,於本具體實施例中,基板8可為透明基板,因此光束可自基板8背面穿透基板8而聚焦於材料80。於實務中,光束聚焦裝置72所發出之光束也可不穿透基板8而直接聚焦於材料80之上。However, in contrast to the above-described embodiments, the beam of light emitted by the beam focusing device 72 of the present embodiment is focused on the material 80 of the substrate 8 to melt the material 80 on the substrate 8. Probe 702 can contact material 80 in a molten state. Next, after the probe 702 contacts the material 80 in a molten state, the beam focusing device 72 stops the beam focusing to cool the material 80 that was originally in a molten state and re-solidifies on the probe 702. Thereafter, the probe 702 can be removed to carry away the material 80 in contact with the probe 702. Thereby, the wrong material 80 coated on the substrate 8 can be removed. Please note that in this embodiment, the substrate 8 can be a transparent substrate, so that the light beam can penetrate the substrate 8 from the back side of the substrate 8 to focus on the material 80. In practice, the beam emitted by the beam focusing device 72 can also be focused directly onto the material 80 without penetrating the substrate 8.
請一併參閱圖二以及圖六,圖六係繪示根據本發明之一具體實施例之奈米微影方法的示意圖。如圖六配合圖二所示,本具體實施例之奈米微影方法包含下列步驟:於步驟S90,聚焦光束於探針302上之接觸點3020(聚焦點),致使接觸點3020以及其周圍之材料呈現熔化狀態;於步驟S92,將呈現熔化狀態之接觸點3020接觸基板4以塗佈材料於基板4上。請注意,於本具體實施例中,探針302係以欲塗佈於基板4上之材料所構成。Referring to FIG. 2 and FIG. 6 together, FIG. 6 is a schematic diagram showing a nano lithography method according to an embodiment of the present invention. As shown in FIG. 6 in conjunction with FIG. 2, the nanolithography method of the present embodiment includes the following steps: in step S90, the beam is focused on a contact point 3020 (focus point) on the probe 302, causing the contact point 3020 and its surroundings. The material exhibits a molten state; in step S92, the contact point 3020 exhibiting a molten state contacts the substrate 4 to coat the material on the substrate 4. Please note that in this embodiment, the probe 302 is constructed of a material to be applied to the substrate 4.
上述具體實施例之步驟,其順序亦可互相調換。舉例而言,於另一具體實施例中,探針302之接觸點3020可先接觸基板4,接著再聚焦光束於接觸點3020上使接觸點3020呈現熔化狀態以塗佈材料於基板4之上。The steps of the above specific embodiments may also be interchanged. For example, in another embodiment, the contact point 3020 of the probe 302 may first contact the substrate 4, and then focus the beam on the contact point 3020 to bring the contact point 3020 into a molten state to coat the material on the substrate 4. .
此外,上述具體實施例之方法,其用以塗佈基板之結構並不限於探針,而是根據使用者或設計者需求有所差異。舉例而言,塗佈結構亦可為一平面結構,光束聚焦於平面結構之用以接觸基板的表面上而形成一或多個聚焦點,進而熔化聚焦點及其周圍之材料。接著,平面結構可藉由壓印的方式,使聚焦點接觸基板以塗佈材料於基板上。Further, in the method of the above specific embodiment, the structure for coating the substrate is not limited to the probe, but varies depending on the needs of the user or the designer. For example, the coating structure may also be a planar structure, and the beam is focused on a surface of the planar structure for contacting the substrate to form one or more focusing points, thereby melting the material of the focusing point and its surroundings. Then, the planar structure can be embossed so that the focus point contacts the substrate to coat the material on the substrate.
相較於先前技術,本發明提供一種奈米微影系統以及奈米微影方法,其係以聚焦光束之方式熔化塗佈結構上之材料,並將塗佈結構上呈現熔化狀態之部分接觸基板以塗佈材料於基板上。本發明之奈米微影系統以及奈米微影方法不須於探針等塗佈結構上設置電熱絲以及電路,進而降低探針之製程複雜度以及製造成本。於大面積塗佈方面,本發明可同時產生多個聚焦光點於多個探針上以利大面積塗佈,或產生多個聚焦光點於平面式的塗佈結構上進以壓印方式進行大面積塗佈。此外,於塗佈過程中使用者可即時觀察塗佈狀況,並當發生塗佈錯誤時,使用者可輕易地清除錯誤部分。Compared with the prior art, the present invention provides a nano lithography system and a nano lithography method, which melts a material on a coated structure by focusing a light beam, and contacts a portion of the coated structure in a molten state to contact the substrate. The coating material is applied to the substrate. The nano lithography system and the nano lithography method of the present invention do not require the provision of a heating wire and a circuit on a coating structure such as a probe, thereby reducing the process complexity and manufacturing cost of the probe. In terms of large-area coating, the present invention can simultaneously produce a plurality of focused spots on a plurality of probes for large-area coating, or generate a plurality of focused spots on a planar coating structure to imprint Large area coating. In addition, the user can immediately observe the coating condition during the coating process, and the user can easily remove the wrong portion when a coating error occurs.
藉由以上較佳具體實施例之詳述,係希望能更加清楚描述本發明之特徵與精神,而並非以上述所揭露的較佳具體實施例來對本發明之範疇加以限制。相反地,其目的是希望能涵蓋各種改變及具相等性的安排於本發明所欲申請之專利範圍的範疇內。因此,本發明所申請之專利範圍的範疇應該根據上述的說明作最寬廣的解釋,以致使其涵蓋所有可能的改變以及具相等性的安排。The features and spirit of the present invention will be more apparent from the detailed description of the preferred embodiments. On the contrary, the intention is to cover various modifications and equivalents within the scope of the invention as claimed. Therefore, the scope of the patented scope of the invention should be construed as broadly construed in the
1、2...微影裝置1, 2. . . Lithography device
10、20...探針10, 20. . . Probe
12...材料12. . . material
22...電熱絲twenty two. . . Heating wire
3、5、7...奈米微影系統3, 5, 7. . . Nano lithography system
30、50、70...塗佈裝置30, 50, 70. . . Coating device
32、52、72...光束聚集裝置32, 52, 72. . . Beam concentrating device
300、500、700...承載構件300, 500, 700. . . Bearing member
302...第一探針302. . . First probe
3020...接觸點3020. . . Contact point
320...第一發光單元320. . . First lighting unit
322...第一透鏡322. . . First lens
324...第二發光單元324. . . Second lighting unit
326...第二透鏡326. . . Second lens
502...平面結構502. . . Planar structure
5020...聚焦點5020. . . Focus point
520...發光單元520. . . Light unit
522...透鏡522. . . lens
702...探針702. . . Probe
4、6、8...基板4, 6, 8. . . Substrate
80...材料80. . . material
S90、S92...流程步驟S90, S92. . . Process step
圖一A以及圖一B係繪示先前技術之奈米微影技術的示意圖。Figure 1A and Figure 1B show schematic diagrams of prior art nanolithography techniques.
圖二係繪示根據本發明之一具體實施例之奈米微影系統的示意圖。2 is a schematic diagram of a nanolithography system in accordance with an embodiment of the present invention.
圖三係繪示根據本發明之另一具體實施例之奈米微影系統之示意圖。Figure 3 is a schematic illustration of a nanolithography system in accordance with another embodiment of the present invention.
圖四係繪示根據本發明之另一具體實施例之奈米微影系統的示意圖。4 is a schematic diagram of a nanolithography system in accordance with another embodiment of the present invention.
圖五係繪示根據另一具體實施例之奈米微影系統清除基板上塗佈錯誤之材料的示意圖。Figure 5 is a schematic diagram showing the material of a nano lithography system for removing coating errors on a substrate according to another embodiment.
圖六係繪示根據本發明之一具體實施例之奈米微影方法的示意圖。Figure 6 is a schematic diagram showing a nanolithography method in accordance with an embodiment of the present invention.
3...奈米微影系統3. . . Nano lithography system
30...塗佈裝置30. . . Coating device
32...光束聚集裝置32. . . Beam concentrating device
300...承載構件300. . . Bearing member
302...第一探針302. . . First probe
3020...接觸點3020. . . Contact point
320...第一發光單元320. . . First lighting unit
322...第一透鏡322. . . First lens
4...基板4. . . Substrate
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Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TW200502712A (en) * | 2003-05-09 | 2005-01-16 | Asml Netherlands Bv | A method of preparing components, prepared component, lithographic apparatus and device manufacturing method |
| US20060242740A1 (en) * | 2004-08-11 | 2006-10-26 | California Institute Of Technology | Method and device for surfactant activated Dip-Pen Nanolithography |
| TW200732860A (en) * | 2006-02-14 | 2007-09-01 | Asml Netherlands Bv | Lithographic apparatus and stage apparatus |
| US20070228296A1 (en) * | 2006-04-03 | 2007-10-04 | Mouttet Blaise L | Parallel Electron Beam Lithography stamp (PEBLS) |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TW200502712A (en) * | 2003-05-09 | 2005-01-16 | Asml Netherlands Bv | A method of preparing components, prepared component, lithographic apparatus and device manufacturing method |
| US20060242740A1 (en) * | 2004-08-11 | 2006-10-26 | California Institute Of Technology | Method and device for surfactant activated Dip-Pen Nanolithography |
| TW200732860A (en) * | 2006-02-14 | 2007-09-01 | Asml Netherlands Bv | Lithographic apparatus and stage apparatus |
| US20070228296A1 (en) * | 2006-04-03 | 2007-10-04 | Mouttet Blaise L | Parallel Electron Beam Lithography stamp (PEBLS) |
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