TWI419247B - Method for limiting expansion of earthquake damage and system for limiting expansion of earthquake damage for use in semiconductor manufacturing apparatus - Google Patents

Description

Method for suppressing seismic damage expansion for semiconductor manufacturing apparatus and system for suppressing earthquake damage expansion

The present invention relates to a method for suppressing the expansion of seismic damage for a semiconductor manufacturing apparatus and a system for suppressing the expansion of seismic damage.

This application is based on and claims priority to Japanese Patent Application No. 2007-309720 and No. 2008-270753, filed on Jan. In this article.

The fabrication of semiconductor devices includes the steps of providing various processes (e.g., oxidation, film deposition, and the like) to a semiconductor wafer as an object to be processed. As means for carrying out such programs, for example, a semiconductor manufacturing apparatus (also referred to as a vertical heat processing apparatus) capable of processing a plurality of wafers in a batch mode (for example, see Patent Document 1) is used.

The semiconductor manufacturing apparatus includes: a transport area including a transport mechanism configured to serve as a FOUP (front open integral slot, also referred to as a carrier) for use as a container for a plurality of wafers a loading magazine (loading and unloading portion) transported to a storage rack portion or a transport portion and vice versa; a wafer counter (detection mechanism) configured to be loaded from the loading magazine One of the front portions of the FOUP is separated from a removable cover and detects the position of the wafer in the FOUP; a FOUP trap (receiving and transmitting mechanism) configured to receive the FOUP from the transport mechanism and transmit The FOUP to the transport portion; a lifting mechanism disposed in a loading area (working area) formed under the furnace opening of a heating furnace, the lifting mechanism being configured to support a plurality of vertically held a wafer boat (retainer) of a predetermined interval of wafers on a cover member for opening and closing the furnace opening to load/unload the wafer boat into the heating furnace; Institution And an opening formed in the partition wall separating one of the transport area and the loading area, and a notch aligner (alignment mechanism) It is configured to receive wafers from the loading area and to align such locations as indicia provided in notches (cuts) in individual perimeters of the wafers.

These wafers are expensive and therefore the cost of production will increase as the processing steps progress. Therefore, the wafer should be handled more carefully.

[Patent Document 1] JP2000-150400A

However, in the above-described batch type semiconductor manufacturing apparatus, the configuration of the apparatus causes various limitations in terms of software and hardware, which makes it difficult to have an earthquake-resistant structure or an earthquake-proof function. Therefore, sufficient countermeasures against earthquakes have not yet been taken. Thus, when an earthquake occurs and the device experiences a large shaking, the device may suffer various damages. That is, the boat may fall and be destroyed, the wafer may jump out of the boat and rupture, and/or the gas may leak. If the device suffers from this damage, it should take a long time to resume the restart of the device, which may further increase the damage. In order to solve this problem, the applicant of the present invention has applied to a method for suppressing the expansion of seismic damage for a semiconductor manufacturing apparatus and a system for suppressing the expansion of the earthquake damage (Unexamined Japanese Patent Application No. 2007-208863).

However, only the invention of the above patent application is insufficient to protect the overall semiconductor manufacturing apparatus. For example, in the loading magazine and the transport portion, the FOUP is sometimes opened with its cover separated therefrom. In this state, when an earthquake occurs to roughly shake the device, the wafer may fly out of the FOUP and the wafer that has flown out of the FOUP may fall and rupture.

Further, in the case where an earthquake occurs and the device undergoes a large shaking when the FOUP is transported by the transport mechanism, the FOUP may fall, and thus the wafer in the FOUP may be broken. Alternatively, when an earthquake occurs after the FOUP is placed on the transport portion by the FOUP catcher, the FOUP may fall from the transport portion, and thus the wafer in the FOUP may be broken.

Further, in the case where an earthquake occurs when the wafer boat is unloaded from the heating furnace after the heating process, the wafers may fly out of the wafer boat, and the wafer may fall and rupture. When a wafer breaks into small pieces and the blocks are then dispersed in the loading area, the blocks may be captured in individual drive sections.

The semiconductor manufacturing apparatus includes: a heater (heating device) configured to heat the heating furnace to a high temperature; a pump system configured to evacuate the heating furnace and reduce the same And a gas system configured to supply a process gas and an inert gas that can be a hazardous gas to the furnace. Therefore, in order to suppress the expansion of earthquake damage including personal injury, it is desirable to simultaneously achieve safety assurance and early recovery.

The present invention has been implemented in accordance with the above circumstances. It is an object of the present invention to provide a method for suppressing the expansion of seismic damage for a semiconductor manufacturing apparatus and a system for suppressing the expansion of seismic damage, the method and system capable of predicting the occurrence of an earthquake and preventing an object to be processed from flying out of an open container, The container that is transported drops, and an object to be processed flies out of a holder that is unloaded to minimize damage and reduce the time required for recovery.

The present invention is a method for suppressing the expansion of seismic damage of a semiconductor manufacturing apparatus, the semiconductor manufacturing apparatus comprising: a transport area in which a container containing an object to be processed and having a lid is loaded and unloaded; a heating furnace having a furnace opening; and a working area disposed under the heating furnace, the working area being separated from the conveying area by a dividing wall having an opening; wherein: the conveying area has a loading and unloading portion for the container, a storage rack portion for the container, a transport portion for the container disposed adjacent the opening, and a transport mechanism configured to transport the container; and the work area Having an evacuation mechanism configured to load and unload a holder for holding an object to be treated, the holder being placed on a cover member for opening and closing the furnace opening, and a door mechanism The cover for opening and closing the partition wall and the cover of the container on the transport portion; suppressing the expansion of the earthquake damage The method includes: receiving an emergency earthquake notification transmitted through a communication line according to an initial microseismic or directly detecting one of the initial microseisms; and stopping the operation of the heating furnace according to the received emergency earthquake notification or the detected initial microseismic a first step; and a second step performed concurrently with the first step, wherein the door mechanism is closed when the door mechanism is opened.

The present invention is a method for suppressing the expansion of seismic damage, wherein: the heating furnace comprises a heater, a decompression pump, and a valve for supplying a processing gas and an inert gas; and the first step comprises the following steps: When the received emergency earthquake notification or a predicted earthquake intensity determined by the initial microseism is equal to or greater than a predetermined value, the heater and the decompression pump are turned off, and a process gas and/or an inert gas is turned off. Using the valves; and when the predicted seismic intensity is less than the predetermined value, operating the heater and/or the decompression pump, opening an inert gas valve, and closing a valve for processing gas .

The present invention is a method for suppressing the expansion of seismic damage, wherein: the heating furnace includes a heater and a valve for supplying a processing gas and an inert gas; and the first step comprises the following steps: when receiving an emergency earthquake notification or When the predicted seismic intensity determined by the initial microseism is equal to or greater than a predetermined value, the heater is turned off, and a valve for treating gas and/or an inert gas is turned off; and when the predicted seismic intensity is When it is less than the predetermined value, the heater is operated to open a valve for inert gas, and a valve for processing gas is closed.

The present invention is a method of suppressing the expansion of seismic damage, wherein the semiconductor manufacturing apparatus further includes a detecting mechanism configured to remove the cover from the container loaded and unloaded or partially and detect in the container One of the positions of an object to be processed, and the second step includes the step of returning the detecting mechanism to an initial state and closing the cover when the detecting mechanism is operated.

The present invention is a method for suppressing the expansion of seismic damage, wherein the semiconductor manufacturing apparatus includes an alignment mechanism configured to receive an object to be processed from a work area side and position a one formed around the object to be processed Marking, and the second step includes the step of operating a centering mechanism disposed on the alignment mechanism to stop the object to be processed.

The present invention is a method of suppressing the expansion of seismic damage, wherein the second step comprises the step of moving the transport mechanism to a lowest position and stopping the transport mechanism at the lowest position when moving the transport mechanism up or down.

The present invention is a method of suppressing the expansion of seismic damage, wherein the transport mechanism has a transport arm, and the second step includes the step of extending the transport arm to carry the container to the storage rack portion, or from the The transport arm is extended when the storage rack portion carries the container.

The present invention is a method of suppressing the expansion of seismic damage, wherein the semiconductor manufacturing apparatus includes a receiving and transporting mechanism configured to receive the container from the transporting mechanism and transport the container to the transporting portion, and the second step includes The following steps: when the receiving and transporting mechanism is operated to receive the container from the transport portion and transport the container to the transport portion, the receiving and transporting mechanism holds the container.

The present invention is a method of suppressing the expansion of seismic damage, wherein the second step comprises the step of loading the holder into the heating furnace again when the lifting mechanism is unloading the holder from the heating furnace.

The present invention is a method of suppressing the expansion of seismic damage, wherein the semiconductor manufacturing apparatus includes a holder table on which the holder for placing the object to be processed is placed; and a locking mechanism configured to be locked The holder on the holder table, and the second step includes the step of locking the holder by the locking mechanism when the holder is placed on the holder.

The present invention is directed to a system for suppressing the expansion of seismic damage of a semiconductor manufacturing apparatus, the semiconductor manufacturing apparatus comprising: a transport area in which a container containing an object to be processed and having a cover is loaded and unloaded; a heating furnace having a furnace opening; and a working area disposed under the heating furnace, the working area being separated from the conveying area by a dividing wall having an opening; wherein the conveying area has the a loading and unloading portion for the container, a storage rack portion for the container, a transport portion for the container disposed adjacent the opening, and a transport mechanism configured to transport the container; and the work area Having an evacuation mechanism configured to load and unload a holder for holding an object to be treated, the holder being placed on a cover member for opening and closing the furnace opening, and a door mechanism The cover for opening and closing the partition wall and the cover of the container on the transport portion; the system for suppressing the expansion of the earthquake damage The method includes: a receiving portion configured to receive an emergency earthquake notification transmitted through a communication line according to an initial microseismic, or an initial microseism detecting portion configured to directly detect an initial microseismic; a control portion configured to perform a first step, wherein the operation of the heating furnace is stopped according to the received emergency earthquake notification or the detected initial microseism, and a second step, wherein the door mechanism is open When the door mechanism is closed.

The present invention is a system for suppressing the expansion of seismic damage, wherein: the heating furnace includes a heater, a decompression pump, and a valve for supplying a process gas and an inert gas; and the first step includes the following steps: When the received emergency earthquake notification or a predicted earthquake intensity determined by the initial microseism is equal to or greater than a predetermined value, the heater and the decompression pump are turned off, and a process gas and/or an inert gas is turned off. Using the valves; and when the predicted seismic intensity is less than the predetermined value, operating the heater and/or the decompression pump, opening an inert gas valve, and closing a valve for processing gas .

The present invention is a system for suppressing the expansion of seismic damage, wherein: the heating furnace includes a heater and a valve for supplying a processing gas and an inert gas; and the first step comprises the following steps: when receiving an emergency earthquake notification or When the predicted seismic intensity determined by the initial microseism is equal to or greater than a predetermined value, the heater is turned off, and a valve for treating gas and/or an inert gas is turned off; and when the predicted seismic intensity is When it is less than the predetermined value, the heater is operated to open a valve for inert gas, and a valve for processing gas is closed.

The present invention is a system for suppressing the expansion of seismic damage, wherein the semiconductor manufacturing apparatus further includes a detecting mechanism configured to remove the cover from the container on the loading and unloading portion and detect that the container is to be processed One of the positions of an object, and the second step includes the step of returning the detecting mechanism to an initial state and closing the cover when the detecting mechanism is operated.

The present invention is a system for suppressing the expansion of seismic damage, wherein the semiconductor manufacturing apparatus includes an alignment mechanism configured to receive an object to be processed from the side of the work area and to be positioned around the object to be processed. A mark, and the second step includes the step of operating a centering mechanism disposed on the alignment mechanism to stop the object to be processed.

The present invention is a system for suppressing the expansion of seismic damage, wherein the second step comprises the step of moving the transport mechanism to a lowest position and stopping the transport mechanism at the lowest position when moving the transport mechanism up or down.

The present invention is a system for suppressing the expansion of seismic damage, wherein the transport mechanism has a transport arm, and the second step comprises the steps of: extending the transport arm to carry the container to the storage rack portion, or from the The transport arm is extended when the storage rack portion carries the container.

The present invention is a system for suppressing the expansion of seismic damage, wherein the semiconductor manufacturing apparatus includes a receiving and transporting mechanism configured to receive the container from the transporting mechanism and transport the container to the transporting portion, and the second step includes The following steps: when the receiving and transporting mechanism is operated to receive the container from the transport portion and transport the container to the transport portion, the receiving and transporting mechanism holds the container.

The present invention is a system for suppressing the expansion of seismic damage, wherein the second step comprises the step of loading the holder into the furnace again when the lifting mechanism is unloading the holder from the furnace.

The present invention is a system for suppressing the expansion of seismic damage, wherein the semiconductor manufacturing apparatus includes a holder table on which the holder for transporting an object to be processed is placed; and a locking mechanism configured to be locked The holder on the holder table, and the second step includes the step of locking the holder by the locking mechanism when the holder is placed on the holder.

According to the present invention, an emergency earthquake notification of an initial microseismic (P wave) detected by about ten or ten seconds before a main motion (S wave) and transmitted through a communication line, or by direct detection The initial microseism is measured to stop the operation of the semiconductor manufacturing apparatus. At the same time, when the door mechanism is opened, the door mechanism is closed. Thus, an object to be treated can be prevented from flying out of the container by an earthquake, which may cause the object to be treated to fall and rupture in order to minimize damage and reduce the time required for recovery.

The best mode for carrying out the invention will be described below with reference to the accompanying drawings. BRIEF DESCRIPTION OF THE DRAWINGS Fig. 1 is a view schematically showing a system for suppressing the expansion of seismic damage for a semiconductor manufacturing apparatus in an embodiment of the present invention. Figure 2 is a cross-sectional view showing the semiconductor manufacturing apparatus shown in Figure 1. 3(a) to 3(f) are explanatory views for explaining an opening and closing operation of a cover of a FOUP in a load port portion.

In the drawings, reference numeral 1 describes a semiconductor manufacturing apparatus, such as a vertical heat treatment apparatus, placed in a clean room. The heat treatment apparatus 1 includes a housing 2 that defines an outer contour of one of the devices. Formed in the outer casing 2: a transport area Sa in which a FOUP 3 is loaded and unloaded, which serves as a container containing an object (semiconductor wafer) W to be processed and has a cover; a heating for a wafer W The furnace 5 has a furnace opening 5a and a loading area (working area) Sb disposed below the heating furnace 5 and separated from the conveying area Sa by a dividing wall 6 having an opening 34. The transport area Sa includes a loading cassette (loading and unloading portion) 7 for a FOUP 3 as a container containing a plurality of semiconductor wafers W, a storage rack portion 11 and a transport platform (transport portion) 12. In the loading region Sb, a wafer W is attached to a wafer boat (holder) 4 capable of vertically holding a plurality of wafers W at a predetermined pitch (for example, about 100 to 150) and a FOUP placed on the transportation platform 12. The transport is carried out between 3, and the boat 4 is loaded into and unloaded from the heating furnace 5.

The FOUP 3 is a plastic container that is capable of holding and carrying a plurality of (for example, 13 to 25) wafers of a predetermined pupil at a predetermined interval therebetween, for example, a 300 mm wafer. The FOUP 3 has one of the openings for the hermetic seal. The cover 3a is detachable and is formed in a front portion of the FOUP 3 through which a wafer is carried and carried out of the FOUP 3. A keyhole (not shown) of a locking mechanism disposed on the cover 3a is formed in a front surface of one of the covers 3a. A cover attachment and detaching device as described in, for example, JP 2002-353289 A is used as a key member that can be inserted into the key hole and rotated to lock and release the cover 3a so that the cover is attached to the FOUP 3 and A device separated from it. Such a cover attachment and separation device is disposed on the loading cassette 7 and a door mechanism 15.

A loading magazine (loading and unloading portion) 7 through which the FOUP 3 is loaded and unloaded by an operator or a transport robot is disposed on a front portion of the outer casing 2. The loading cassette 7 is composed of a unit 8 on which the FOUP 3 can be placed, the stage being disposed on the front portion of the housing, and an opening 9 formed in the front surface of the housing 2 through which the FOUP 3 can be Pass it to station 8 and return from it. The opening 9 preferably has a door 10 that is movable up and down.

A detection mechanism 32 is disposed behind the stage 8 of the loading cassette 7, which is capable of opening the cover 3a of the FOUP 3 and detecting the position and number of the plurality of wafers W. The detection mechanism 32 is equipped with the above-described cover attachment and separation device. As shown in FIG. 3, the detecting mechanism 32 includes: a pair of right and left light emitting portions 32a and a light receiving portion 32b spaced apart from each other; a detecting head 32x capable of detecting the presence of a wafer W; A driving portion, not shown, for moving the detecting head 32x in the up and down direction and also in the front and rear direction. The presence of a wafer W can be detected based on whether or not the light beam 32c between the light emitting portion 32a and the light receiving portion 32b is interrupted.

A transport platform 12 on which the FOUP 3 can be placed to transport a wafer is disposed on one side of the partition wall 6 in the transport area Sa. A plurality of storage rack portions 11 are disposed above and above the transport platform 12, and each of the portions can accommodate the FOUP 3.

The conveying mechanism 13 is mainly constituted by a lifting arm 13b which is moved up and down by a lifting mechanism 13a disposed on one side of the conveying area Sa, and a conveying arm 13c which is disposed on the lifting arm 13b and which can be borrowed The FOUP 3 is horizontally conveyed by supporting a bottom portion thereof.

The conveying area Sa is filled with an atmosphere cleaned by an air cleaner (fan filter unit) not shown. The loading area Sb is also cleaned by an air cleaner (fan filter unit) 14 disposed on one side of the loading area Sb, and is filled with an atmosphere of a positive pressure or an inert gas (for example, N ₂ gas). The transport area Sa is provided with a FOUP catcher (receiving and transporting mechanism) 33 that receives the FOUP 3 from the transport mechanism 13 and transports the FOUP 3 to the transport platform 12. As shown in FIGS. 2 and 9, the FOUP catcher 33 is mainly constituted by a lift arm 33b which is moved up and down by a lift mechanism 33a disposed on one side of the conveyance area Sa, and is disposed on the lift arm 33b. A holding mechanism 33c, the holding mechanism 33c can hold the support portion 3x on one of the FOUPs 3. The FOUP trap 33 receives the FOUP 3 from the transport mechanism 13 and then waits. Thus, during transport of the other FOUP 3 to the storage rack portion 11 or the loading platform 7 from the transport platform 12, the FOUP trap 33 can place the FOUP 3 on the transport platform 12 to enhance the transport operation. effectiveness.

As also shown in FIG. 4, the partition wall 6 includes an opening 34 that is used to contact the front surface of the FOUP 3 placed on the transport platform 12 from the side of the transport area Sa, so that the inside of the FOUP 3 and the loading area Sb The inner sides communicate with each other; and the door mechanism 15 has a door 15a that can close the opening 34 on the side of the loading area Sb. The opening 34 is formed to have a pupil that is substantially the same as the pupil of the front opening of the FOUP 3 (the opening through which the wafer is passed and brought through), so that it can be carried through the opening 34 and carried out of the FOUP 3 A wafer W. The door mechanism 15 is configured to open and close the opening 34 by sliding the door 15a in the left-right direction. The attachment and separation device described above is incorporated in the door 15a. The transport platform 12 is equipped with a pressing mechanism, not shown, for squeezing the FOUP 3 so that the front surface of the FOUP 3 is in contact with a peripheral portion of one of the openings 34.

A notch aligner (alignment mechanism) 16 is disposed under the transport platform 12 to dispose the notches (cuts) of the wafer W in the same direction, and the notches are provided in the peripheral portion of the wafer W to Align the mark in the direction of a crystal. The notch aligner 16 is open toward the loading area Sb and is configured to align the notch of the wafer W transported from the FOUP 3 on the transport platform 12 by a transport mechanism 24 as described below.

As shown in Figures 5 and 6, the notch aligner 16 includes a centering mechanism 36 having a support member 35 that is four blocks in plan view and capable of vertically supporting a plurality of (e.g., five) a periphery of the wafer W at a predetermined interval therebetween; a rotating mechanism 37 capable of raising a central portion of the lower portion of the individual wafer W supported by the support member 35 and horizontally rotating the individual wafer W; and a sensor 38 It is capable of detecting the notches of individual wafers. When the sensor 38 detects the notches, the rotation of the wafers by the rotating mechanism 37 is stopped and the notches are aligned. Each of the support members 35 has a plurality of (e.g., five) L-shaped cross-section support blocks 39 that are vertically disposed at predetermined intervals therebetween. One of the horizontal surfaces 39a of the support block 39 is adapted to receive a peripheral portion of the lower surface of the wafer W, and one of the vertical surfaces 39b of the support block 39 is adapted to limit the position of one of the peripheral portions of the wafer W.

As shown in Fig. 6(b), the support members 35 of the centering mechanism 36 are moved closer to each other by a moving mechanism, so that the center of the wafer W is placed at an appropriate position. Further, as explained below, using the centering mechanism 36, the wafer can be restrained at the time of an earthquake to prevent the wafer from flying out. 6(a) to 6(d), FIG. 6(a) is a view in which the wafers are placed on the support blocks of the support members, and FIG. 6(b) in which the support members are moved. a view closer to each other to place the center of the wafers in position, FIG. 6(c) is a view in which the wafers are supported by the upwardly moving rotating mechanism, and FIG. 6(d) The support members are moved away from each other and the view of the wafers is rotated by the rotating mechanism.

Positioned on the rear portion above the loading area Sb is a vertical heating furnace 5 having a furnace opening 5a in a lower portion thereof. Further, the loading area Sb includes: a cover member 17 that opens and closes the furnace opening 5a of the heating furnace 5; and a lifting mechanism 18 that vertically moves the cover member 17 on which a wafer boat made of, for example, quartz is placed 4. It holds a plurality of (for example, about 100 to 150) wafers W at predetermined intervals in order to load the wafer boat 4 into the heating furnace 5 and unload the wafer boat 4 therefrom. A heat retention tube (heat protection member) 19 disposed on the upper portion of the cover member 17 prevents heat release through the furnace opening 5a when the cover member 17 is closed. The boat 4 can be placed on the upper portion of the heat retaining tube 19. The cover member 17 is equipped with a rotating mechanism 20 that rotates the boat 4 via a heat retaining tube 19. A shutter 21 is disposed adjacent to the furnace opening 5a, which is horizontally movable (rotated) to open and close the furnace opening 5a. When the cover member 17 is opened and the heat-treated boat 4 is unloaded, the shutter 21 blocks the furnace opening 5a. The shutter 21 has a shutter drive mechanism not shown for horizontally rotating the shutter 21 to be opened and closed.

On one side of the loading area Sb, that is, on one side of the air cleaner 14, a crystal boat table (also referred to as a holder table or a boat platform) is disposed on which the boat 4 can be placed to transport the crystal Round W. The boat platform 22 can include a table. However, as shown in FIG. 2, the boat platform 22 preferably includes a first station (loading platform) 22a and a second station (standby platform) disposed along the air cleaner 14 in the forward and backward directions. 22b.

A boat transport mechanism 23 is disposed between the wafer boat 22 and the cover member 17 at a lower portion of the loading region Sb and a position between the transport platform 12 and the heating furnace 5, more specifically, in the crystal The wafer boat 4 is transported between the first stage 22a or the second stage 22b of the platform 22 and the lowered cover member 17, and between the first stage 22a and the second stage 22b. Furthermore, a transport mechanism 24 disposed above the boat transport mechanism 23 is between the FOUP 3 on the transport platform 12 and the boat 4 on the boat platform 22, more specifically, the FOUP on the transport platform 12. 3 between the notch alignment mechanism 16, between the notch alignment mechanism 16 and the wafer boat 4 on the first stage 22a of the boat table 22, and the boat that has been heat treated on the first stage 22a 4 Transport wafer W between blank FOUP 3 on transport platform 12.

As shown in Fig. 11(a), the boat 4 has a top plate 4a, a bottom plate 4b, and a plurality of (e.g., four) support columns 4c disposed therebetween. The bottom plate 4b has an annular shape in plan view. A small diameter portion 4d having a diameter smaller than the diameter of the bottom plate 4b is disposed on a lower portion of the bottom plate 4b. The boat transport mechanism 23 is configured to transport the wafer boat 4, wherein the small diameter portion 4d of the bottom plate 4b of the wafer boat 4 is held by a holding portion 23a (see FIG. 2) having a C shape in a plan view. The support post 4c has a groove not shown for vertically holding a wafer with a predetermined interval therebetween. The space between the right and left support columns 4c on the front side is enlarged to allow the wafer to be brought in and taken out.

The first stage 22a is provided with a locking mechanism 45 for locking the boat 4 on the first stage 22a. The locking mechanism 45 includes a pair of rollers 45a that are partially protruded from above the first stage 22a and are positioned in an opening 4e formed in the bottom plate 4b of the boat 4; and such as the cylinder 45 A driving portion that moves or moves the rollers 45a closer to each other to press the roller 45a to the inner periphery of the opening 4e of the bottom plate 4b or to be separated from the inner periphery to lock and release the boat 4. The locking mechanism 45 is configured to be controlled by a control portion 29 in a second step.

The transport mechanism 24 includes a base table 24a that is horizontally rotatable, and a plurality of (e.g., five) thin transport arms 24b disposed on the base table 24a. The transport arm 24b can be moved with the semiconductor wafer placed thereon. In order to avoid interference with the wafer boat 4 being conveyed, as shown in FIG. 2, the transport mechanism 24 can be moved from a working position A indicated by a broken line to a solid line by a rotating arm 25 in the lateral direction. Retracted position B as shown. The five transport arms 24b are preferably constructed of a central arm for transporting one wafer and four other transport arms that are independently movable from a central arm on the substrate table 24a. The distance between the other four transport arms can be varied vertically relative to the central transport arm. The proximal end portion of one of the turning arms 25 is coupled to a lifting mechanism, not shown, disposed on the other side of the loading area Sb, so that the transport mechanism 24 can be moved up and down.

As shown in FIG. 1, the heating furnace 5 includes a cylindrical processing vessel (reaction tube) 50 made of quartz glass, wherein one of the upper ends of the processing vessel 50 is closed and the lower end thereof is opened; and a heater 51 It is configured to surround one of the circumferences of the processor vessel 50. A cylindrical manifold 52 coupled to a lower end portion of the processing vessel 50 has a gas introduction conduit portion through which a process gas and an inert gas (e.g., N ₂ gas) are supplied, and an exhaust conduit portion. Gas supply pipes 53a and 53b for supplying a process gas and an inert gas are connected to the gas introduction pipe portion, and an exhaust pipe 54 is connected to the exhaust pipe portion.

The gas supply pipes 53a and 53b are respectively equipped with valves 55a and 55b for opening and closing the pipes 53a and 53b. A main valve 56, a pressure regulating valve 57, an exhaust trap 58 and a decompression pump 59, which are connected to the exhaust duct 54 in order for opening and closing, are sequentially connected. In one of the vertical processing apparatuses of this type in which the loading region Sb is filled with an inert gas (for example, N ₂ gas), a gas supply pipe 61 for supplying an inert gas is connected to the loading region Sb, and a gate 62 is provided. It is disposed on the gas supply pipe 61.

In order to protect the vertical heat treatment apparatus 1 constructed as above, the method for suppressing the expansion of seismic damage for the vertical heat treatment apparatus 1 includes a step of receiving an emergency earthquake notification transmitted through a communication line 26 according to an initial microseismic wave (P wave) a first step in which one of the operations of the vertical heat treatment apparatus 1 is stopped according to the emergency earthquake notification; and a second step performed simultaneously with the first step, wherein when the door mechanism 15 is opened, the door mechanism 15 is closed to prevent A wafer W is fed out of the heat treatment apparatus 1. The system for suppressing the expansion of seismic damage for carrying out the method includes: a receiving portion 28 configured to receive an emergency earthquake notification transmitted through the communication line 26 according to an initial microseismic (P wave); and a control portion 29, It is configured to perform the first step, wherein one of the operations of the vertical heat treatment device 1 is stopped according to the emergency earthquake notification, and a second step, wherein when the door mechanism 15 is opened, the door mechanism 15 is closed to prevent a crystal Round W flies out.

An emergency earthquake notification provided by the Weather Bureau and an emergency earthquake detection system provided by a third party organization may be used as the emergency earthquake notification. An earthquake system consists of an initial microseismic vibration caused by a P wave (major wave) of a fast longitudinal wave (7 km to 8 km per second), and a slow lateral wave (3 km per second) One of the strong vibrations caused by an S wave (minor wave) of 4 km) is the main motion. The source of the earthquake, the intensity of the earthquake, and the arrival time of the S-wave can be calculated by processing the data of the P-waves collected by several seismometers 30 installed in many parts of the country. The earthquake notification is transmitted from a transmitting portion 31 through a wired circuit and/or a satellite circuit, and the earthquake notification is received by the receiving portion 28. Therefore, an earthquake intensity can be predicted in a period from several seconds to ten seconds or more before a main shock that generates strong vibration arrives, and thus the required measures can be taken in advance for the main shock. It is preferably configured as the control portion 29, so that when a predicted earthquake intensity is greater than a predetermined predetermined threshold (e.g., predicted earthquake intensity 5), the control portion 29 performs a method of suppressing the expansion of the earthquake damage. Considering the seismic strength of a building or the like, the threshold can be set by a user as needed. In order to achieve safety and early recovery at the same time, the preferred avoidance of the pump system and gas system is as follows. That is, there are cases where the predicted earthquake intensity is equal to or greater than a predetermined value (for example, +5 or larger), and a case where one of the predicted earthquake strengths is smaller than the predetermined value (for example, -5 or smaller). When a predicted earthquake intensity is equal to or greater than the predetermined value, a device (semiconductor manufacturing device) is stopped in the case where priority is provided to ensure safety in order to minimize personal injury and material damage. On the other hand, when a predicted earthquake intensity is less than the predetermined value, the device is stopped in the case where priority is provided to an earlier recovery.

Basically, in this first step, one of the power sources (main power source) of the heat treatment apparatus 1 and a gas line are turned off. However, the primary power source can be operated just before a major shock (S wave) arrives. When the main power source is cut off in the first step (P wave), an auxiliary power source is reserved for the detecting mechanism 32, and the detecting mechanism includes the cover attaching and separating device driven to prevent the wafer from flying out. The door mechanism 15, the notch aligner 16, the lifting mechanism 18, the conveying mechanism 13 driven to prevent the FOUP 3 from falling, and the FOUP catcher 33.

Specifically, in the first step, when a predetermined earthquake intensity is equal to or greater than the predetermined value, since the device is stopped in the case of providing priority to ensure safety to minimize personal injury and material damage, Preferably, the heater 51 and the decompression pump 59 are cut off, and the valves 55a and 55b for a process gas (actual gas) and an inert gas are closed. The main valve 56 is also preferably closed.

When a predicted earthquake intensity is less than the predetermined value, since the device is stopped in the case where the priority is provided to the earlier recovery, it is preferable to operate the heater 51 and the decompression pump 59, and use it for one. The inert gas valve 55b is opened while closing the valve 55a for a process gas. The main valve 56 in the exhaust conduit 54 is preferably opened. "Running the heater 51" means that one of the heaters 51 is operated to maintain the temperature of the heater 51 at a set temperature. "In an inert gas using a valve 55b open" means a (e.g.) a continuing purge cycle (where N ₂ is repeatedly implemented supply, stop supply of N ₂ and N ₂ was evacuated, so that the oxygen concentration in a short period of time less than The predetermined value) continues with a dilute discharge (when a process gas in the process vessel is discharged, the process gas is discharged while being diluted by N ₂ ), or N _{2 is} continuously supplied to the loading zone. The control of the opening and closing main valve 56 and the valves 55a, 55b, and 62, and the control of turning on and off the heater 51 and the decompression pump 59 are performed by the control portion 29 in accordance with a predicted earthquake intensity.

Meanwhile, in this specific embodiment, in the second embodiment, when the door mechanism 15 is opened (see Fig. 4 (a)), the control portion 29 is configured to close the door mechanism 15 (see Fig. 4 (see Fig. 4 (see Fig. 4 (see Fig. 4 (see Fig. 4 (see Fig. 4 (see Fig. 4 (a)). b)).

According to the method of suppressing the expansion of seismic damage or the system for suppressing the expansion of the earthquake damage 27, the use of an initial microseismic (P wave) is performed in a period from several cycles to ten or more cycles before a main motion (S wave) The operation of detecting one of the vertical heat treatment devices 1 is detected by an emergency earthquake notification transmitted through the communication line 26. At the same time, as shown in Fig. 4, when the door mechanism 15 is opened (see Fig. 4 (a)), the door mechanism 15 is closed (see Fig. 4 (b)). Therefore, the wafer W can be prevented from flying out of the FOUP 3 on the transport platform 12, thereby preventing an increase in material damage such as cracking of the wafer W and an increase in time lost for recovery of the device.

Specifically, the heating furnace 5 includes a heater 51, a decompression pump 59, and valves 55a and 55b for supplying a process gas and an inert gas. This first step includes the following steps. That is, when a predetermined earthquake intensity is equal to or greater than the predetermined value, the heater 51 and the decompression pump 59 are turned off, and the valves 55a and 55b for a process gas and an inert gas are closed. On the other hand, when a predetermined earthquake intensity is less than the predetermined value, the heater 51 and the decompression pump 59 are operated, and the valve 55b for an inert gas is opened while the 55a valve for a process gas is closed. Therefore, in the avoidance operation of the pump system and the gas system, both safety and early recovery can be achieved at the same time.

The condition of the device, the conditions of the wafers, and the conditions of the wafer boat are confirmed by an operator before a power source is turned back on to restart the device. The operator determines if one of the devices is operational. When it is judged that it is not feasible, eliminate the factors that make the operation unfeasible (such as the division of a wafer, the rupture or misplacement of a wafer, the rupture or misplacement of a wafer boat, the leakage of a gas, the leakage of water, and Leakage). Thus, the device is activated after confirming that the conditions for activating the device have been met (e.g., operation of a valve for a process gas and a decompression pump, and operation of one of the delivery systems).

As shown in FIG. 3, when the cover 3a of the FOUP 3 has been opened by the detecting mechanism 32 (see FIGS. 3(b) and 3(e)), and the detecting head 32x of the motion detecting mechanism 32 is closer to the FOUP 3 In the case of the wafer (see FIGS. 3(c) and 3(d)) for detecting the wafer W, the second step preferably includes the following steps. That is, the detecting operation of the detecting head 32x is suspended, the detecting head 32x is returned to a lower original position (starting position) HPa, and the cover 3a of the FOUP 3 is closed (see FIGS. 3(a) and 3(d)). . That is, when the detecting mechanism 32 is operated, the detecting mechanism 32 is returned to its initial state and the cover 3a is closed. Therefore, it is possible to prevent the wafer W from flying out of the FOUP 3 due to an earthquake, thereby preventing an increase in material damage such as cracking of the wafer W and prolongation of time lost for recovery of the device. Further, since the detecting head 32x of the detecting mechanism 32 is returned to the starting position Hpa, the semiconductor manufacturing apparatus 1 can be quickly restored.

In the second step as shown in Figures 5, 6(b) and 6(c), it is preferred to operate the centering mechanism 36 disposed on the notch aligner 16 to stop the wafer W. Thus, an increase in material damage can be prevented, such as cracking of the wafer W due to the earthquake, which may be caused by the wafer W flying out of the notch aligner 16, and the time lost for recovery of the device.

In the second step as shown in Figures 7(a) and 7(b), when the transport mechanism 13 is moved up or down, the transport mechanism 13 is preferably moved to a lowermost position (i.e., the start Location HPb) and stop here. Therefore, it is possible to prevent the FOUP 3 from falling from the transport arm 13c of the transport mechanism 13 at a higher position due to the earthquake, thereby preventing an increase in material damage such as cracking of the wafer W, which may be caused by the fall of the FOUP 3. When the transport mechanism 13 is not moved up or down, but the transport arm 13c is extended to carry the FOUP 3 to or from the storage rack portion 11, the transport mechanism 13 is not controlled to move to the lowermost position. Position, but the transport arm 13c is extended in this second step.

In a second step as shown in Figures 9(a) and 9(b), when the FOUP trap 33 is operated to receive the FOUP 3 from the transport platform 12 and transport it to the transport platform, when the FOUP catcher 33 is turned on When the holding mechanism 33c releases the FOUP 3, the holding mechanism 33c is preferably closed to hold the FOUP 3. Therefore, it is possible to prevent the FOUP 3 from falling from the transport platform 12, and it is possible to prevent an increase in material damage such as cracking of the wafer W, which may be caused by the fall of the FOUP 3.

Further, in the second step as shown in Figs. 10(a) and 10(b), when the lifting mechanism 18 unloads the boat 4 from the heating furnace 5, the wafer boat 4 is preferably loaded again to the heating furnace. 5 in. Therefore, even when an earthquake occurs when the wafer boat 4 is unloaded from the heating furnace 5, the wafer W can be prevented from flying out of the wafer boat 4, thereby preventing an increase in material damage such as cracking of the wafer W and recovery of the device. The length of the loss is extended.

In the second step as shown in FIG. 11, the locking mechanism 45 preferably locks the boat 4 when the boat 4 is placed on the first stage 22a as a wafer deck. Therefore, it is possible to prevent the wafer boat 4 on the first stage 22a from falling.

Figure 12 is a view schematically showing a system for suppressing the expansion of seismic damage for a semiconductor manufacturing apparatus in another embodiment of the present invention. In the specific embodiment shown in FIG. 12, the same components as those of the specific embodiment shown in FIG. 1 are denoted by the same reference numerals, and detailed description thereof will be omitted. A vertical heat treatment apparatus 1 in this embodiment includes: a seismograph 60 capable of directly detecting an initial microseismic detection portion of an initial microseism; and a control portion 29 configured to perform a first The step of stopping the operation of one of the vertical heat treatment devices 1 according to an initial micro-shock, and a second step, wherein when the door mechanism 15 is opened, the door mechanism 15 is closed. Although the seismometer 60 is preferably mounted in a housing 2, the seismometer 60 can be installed in a location in a factory. According to this embodiment, an initial microseismic can be detected by the device itself without receiving an emergency earthquake notification, and thus an earthquake can be predicted. Therefore, the wafer in the FOUP can be prevented from flying out of the FOUP, thereby preventing cracking of the wafer to minimize damage.

While the embodiments of the present invention have been described in detail with reference to the drawings, the present invention is not limited thereto, and various changes and modifications may be made without departing from the scope of the invention. For example, a system for suppressing seismic damage expansion for a semiconductor manufacturing apparatus according to the present invention may include: a receiving portion capable of receiving an emergency earthquake notification transmitted through a communication line according to an initial microseism; and an initial microseism detecting portion It can directly detect an initial microseismic, wherein the receiving portion and the initial microseism detecting portion can be switched as needed.

In the above specific embodiments, a heat treatment device (e.g., a CVD device) having a reduced pressure pump is employed by way of example. However, the present invention is applicable to a heat treatment apparatus (e.g., a diffusion apparatus) that does not have a decompression pump. In this case, a factory exhaust system is used as one of the evacuation members of a furnace.

1. . . Semiconductor manufacturing device / heat treatment device

2. . . shell

3. . . Container / FOUP

3a. . . cover

3x. . . Upper support part

4. . . Holder / boat

4a. . . Top board

4b. . . Bottom plate

4c. . . Support column

4d. . . Small diameter part

4e. . . Opening

5. . . Heating furnace

5a. . . Furnace opening

6. . . Split wall

7. . . Loading 埠 / loading and unloading parts

8. . . station

9. . . Opening

10. . . door

11. . . Storage rack section

12. . . Transportation platform

13. . . Transport mechanism

13a. . . Lifting mechanism

13b. . . Lift arm

13c. . . Transport arm

14. . . Air purifier

15. . . Door mechanism

15a. . . door

16. . . Alignment mechanism

17. . . Cover part

18. . . Lifting mechanism

19. . . Heat retention tube

20. . . Rotating mechanism

twenty one. . . Block door

twenty two. . . Crystal boat

22a. . . First/loading platform

22b. . . Second/alternate platform

twenty three. . . Crystal boat transport mechanism

23a. . . Holding part

twenty four. . . Transport agency

24a. . . Base table

24b. . . Transport arm

25. . . Rotating arm

26. . . Communication line

27. . . Earthquake damage

28. . . Receiving part

29. . . Control section

30. . . Seismograph

31. . . Passing part

32. . . Detection mechanism

32a. . . Light emitting part

32b. . . Light receiving part

32c. . . beam

32x. . . Detection head

33. . . FOUP catcher

33a. . . Lifting mechanism

33b. . . Lift arm

33c. . . Holding mechanism

34. . . Opening

35. . . Support member

36. . . Centering mechanism

37. . . Rotating mechanism

38. . . Sensor

39. . . Support block

39a. . . Horizontal surface

39b. . . Vertical surface

45. . . Cylinder/locking mechanism

45a. . . Roller

50. . . Processor

51. . . Heater

52. . . Cylindrical manifold

53a. . . Gas supply pipeline

53b. . . Gas supply pipeline

54. . . Exhaust pipe

55a. . . valve

55b. . . valve

56. . . Main valve

57. . . Pressure regulating valve

58. . . Exhaust trap

59. . . Decompression pump

60. . . Initial vibration detection section

61. . . Gas supply pipeline

62. . . valve

Sa. . . Conveying area

Sb. . . Work area/load area

W. . . Object/wafer

BRIEF DESCRIPTION OF THE DRAWINGS Fig. 1 is a view schematically showing a system for suppressing the expansion of seismic damage for a semiconductor manufacturing apparatus in an embodiment of the present invention.

Figure 2 is a cross-sectional view showing the semiconductor manufacturing apparatus shown in Figure 1.

3(a) to 3(f) are explanatory views for explaining an opening and closing operation of a cover of a FOUP in a load port portion.

4(a) and 4(b) are explanatory views for explaining the opening and closing operations of a door mechanism for opening and closing the cover of the FOUP in a wafer transport portion.

Figure 5 is a perspective view schematically showing an example of a notch aligner.

Figures 6(a) through 6(d) are explanatory views for explaining the operation of one of the notch aligners.

Figures 7(a) and 7(b) are explanatory views for explaining the up and down movement of one of the FOUP transport mechanisms.

Figure 8 is a view showing one of the arms of the extended FOUP transport mechanism.

Figures 9(a) and 9(b) are explanatory views for explaining the operation of one of the FOUP traps in a wafer transport portion at the time of an earthquake.

Figures 10(a) and 10(b) are explanatory views for explaining an operation for unloading a boat from a heating furnace at the time of an earthquake.

11(a) to 11(c) are schematic views showing a boat on a first stage, wherein Fig. 11(a) is a perspective view, and Fig. 11(b) is omitted from the wafer boat An enlarged plan view of a top plate and a support column, and Fig. 11(c) is a cross-sectional view taken along line cc in Fig. 11(b).

Figure 12 is a view schematically showing a system for suppressing the expansion of seismic damage for a semiconductor manufacturing apparatus in another embodiment of the present invention.

1. . . Semiconductor manufacturing device / heat treatment device

2. . . shell

3. . . Container / FOUP

3x. . . Upper support part

4. . . Holder / boat

5. . . Heating furnace

5a. . . Furnace opening

6. . . Split wall

7. . . Loading 埠 / loading and unloading parts

8. . . station

9. . . Opening

10. . . door

11. . . Storage rack section

12. . . Transportation platform

13. . . Transport mechanism

15. . . Door mechanism

16. . . Alignment mechanism

17. . . Cover part

19. . . Heat retention tube

20. . . Rotating mechanism

twenty one. . . Block door

twenty three. . . Crystal boat transport mechanism

twenty four. . . Transport agency

24a. . . Base table

24b. . . Transport arm

26. . . Communication line

27. . . Earthquake damage

28. . . Receiving part

29. . . Control section

30. . . Seismograph

31. . . Passing part

32. . . Detection mechanism

33. . . FOUP catcher

50. . . Processor

51. . . Heater

52. . . Cylindrical manifold

53a. . . Gas supply pipeline

53b. . . Gas supply pipeline

54. . . Exhaust pipe

55a. . . valve

55b. . . valve

56. . . Main valve

57. . . Pressure regulating valve

58. . . Exhaust trap

59. . . Decompression pump

61. . . Gas supply pipeline

62. . . valve

Sa. . . Conveying area

Sb. . . Work area/load area

Claims (18)

A method for suppressing the expansion of seismic damage for a semiconductor manufacturing apparatus, the apparatus comprising: a transporting area in which a container containing an object to be treated and having a lid is loaded and unloaded; and a heating furnace for processing the to-be-processed An electric heating furnace having a furnace opening; and a working area disposed under the heating furnace, the working area being separated from the conveying area by a dividing wall having an opening; wherein: the conveying area has a loading and unloading portion for the container, a storage shelf portion for the container, a transport portion for the container disposed adjacent the opening, and a transport mechanism configured to transport the container; and the work area Having: a lifting mechanism configured to load and unload a holder for holding an object to be processed, the holder being placed on a cover member for opening and closing the furnace opening; and a door mechanism It is configured to open and close the opening of the dividing wall and the cover of the container on the transport portion; the suppression of earthquake damage is expanded The method comprises: receiving an emergency earthquake notification transmitted through a communication line according to an initial microseismic or directly detecting a step of an initial microseism; stopping the heating furnace according to the received emergency earthquake notification or the initial microseism of the detection The first step of the operation; a second step performed simultaneously with the first step, wherein the door mechanism is closed when the door mechanism is open; the semiconductor manufacturing device further includes a detecting mechanism configured to be used from the loading and unloading portion The container removes the cover and detects the position of an object to be processed in the container, and the second step includes the step of returning the detecting mechanism to an initial state when the detecting mechanism is in operation And close the cover. The method of claim 1, wherein the furnace comprises a heater, a decompression pump, and a valve for supplying a process gas and an inert gas; and the first step comprises the steps of: When a predicted earthquake intensity determined according to the received emergency earthquake notification or the initial microseism of the detection is equal to or greater than a predetermined value, the heater and the decompression pump are turned off, and a processing gas and/or a gas is shut off. Or an inert gas for the above valve; and when the predicted seismic intensity is less than the predetermined value, causing the heater and/or the decompression pump to continue to operate, causing an inert gas to continue to open with the valve, and closing A valve for treating a gas. The method of claim 1, wherein the furnace comprises a heater and a valve for supplying a process gas and an inert gas; and the first step comprises the step of: when receiving the emergency according to the Cut off when the earthquake notice or the predicted earthquake intensity determined by the initial microseismage of the detection is equal to or greater than a predetermined value The heater, and closing a valve for treating a gas and/or an inert gas; and when the predicted seismic intensity is less than the predetermined value, causing the heater to continue to operate, causing an inert gas to continue to open the valve And closing the valve for a process gas. The method of claim 1, wherein the semiconductor manufacturing apparatus includes an alignment mechanism configured to receive an object to be processed from a work area side and to be positioned to be formed on the object to be processed. A mark in the circumference, and the second step includes the step of operating a centering mechanism disposed on the alignment mechanism to stop the object to be processed. The method of claim 1 for suppressing the expansion of seismic damage, wherein the second step comprises the step of moving the transport mechanism to a lowermost position and stopping the transport mechanism when moving the transport mechanism up or down The lowest position. The method of claim 1, wherein the transport mechanism has a transport arm, and the second step includes the step of: extending the transport arm to carry the container to the storage rack portion, or When the container is carried from the storage rack portion, the transport arm is extended. The method of claim 1, wherein the semiconductor manufacturing apparatus includes a receiving and transporting mechanism configured to receive the container from the transporting mechanism and transport the container to the transporting portion, and The second step includes the step of causing the receiving and transporting mechanism to hold the container while operating the receiving and transporting mechanism to receive the container from the transport portion and transport the container to the transport portion. A method of suppressing the expansion of an earthquake damage according to claim 1, wherein the second step comprises the step of loading the holder into the heating furnace again when the lifting mechanism unloads the holder from the heating furnace. A method of suppressing the expansion of seismic damage according to claim 1, wherein the semiconductor manufacturing apparatus includes a holder table on which the holder for transporting the object to be processed is placed, and configured to be locked in the A locking mechanism of the holder on the holder table, and the second step includes the step of locking the holder by the locking mechanism when the holder is placed on the holder. A system for suppressing the expansion of seismic damage for a semiconductor manufacturing apparatus, the apparatus comprising: a transport area in which a container containing an object to be treated and having a cover is loaded and unloaded; and a heating furnace for processing An oven having a furnace opening; and a working area disposed below the furnace, the working area being separated from the conveying area by a dividing wall having an opening; wherein the conveying area has the a loading and unloading portion for the container, a storage shelf portion for the container, a transport portion for the container disposed adjacent the opening, and a transport mechanism configured to transport the container; The work area has: a lifting mechanism configured to load and unload a holder for holding an object to be processed, the holder being placed on a cover member for opening and closing the furnace opening; a door mechanism configured to open and close the opening of the dividing wall and the cover of the container on the transport portion; the system for suppressing the expansion of seismic damage comprises: a receiving portion configured to receive An emergency earthquake notification transmitted through a communication line according to an initial microseismic, or an initial microseismic detection portion configured to directly detect an initial microseismic; and a control portion configured to perform a a first step, wherein one of the operations of the heating furnace is stopped according to the received emergency earthquake notification or the initial micro-shock of the detection, and a second step, wherein the door mechanism is closed when the door mechanism is open; the semiconductor The manufacturing apparatus further includes a detecting mechanism configured to remove the cover from the container on the loading and unloading portion and detect that the container is to be processed A position of one object, and the second step comprises the steps of: when the operation detection means, so that the detecting means returns to an initial state and close the lid. A system for suppressing the expansion of an earthquake damage according to claim 10, wherein: the heating furnace comprises a heater, a decompression pump, and a valve for supplying a process gas and an inert gas; and the first step comprises the following steps : cutting off when a predicted earthquake intensity determined according to the received emergency earthquake notification or the initial microseism of the detection is equal to or greater than a predetermined value The heater and the decompression pump, and closing a valve for treating a gas and/or an inert gas; and when the predicted seismic intensity is less than the predetermined value, causing the heater and/or the decompression The pump continues to operate, the valve for an inert gas continues to be opened, and the valve for a process gas is closed. A system for suppressing the expansion of an earthquake damage according to claim 10, wherein: the heating furnace comprises a heater and a valve for supplying a process gas and an inert gas; and the first step comprises the step of: when receiving the emergency according to the When the earthquake notification or a predicted earthquake intensity determined by the initial microseismage of the detection is equal to or greater than a predetermined value, the heater is turned off, and a valve for processing gas and/or an inert gas is closed; and when When the predicted earthquake strength is less than the predetermined value, the heater continues to operate, the valve for an inert gas continues to be opened, and the valve for a process gas is closed. A system for suppressing the expansion of seismic damage according to claim 10, wherein the semiconductor manufacturing apparatus includes an alignment mechanism configured to receive an object to be processed from the side of the work area, and to position the object to be processed A mark in one of the circumferences, and the second step includes the step of operating a centering mechanism disposed on the alignment mechanism to stop the object to be processed. The system of claim 10, wherein the second step comprises the step of: moving the input up or down When the mechanism is fed, the transport mechanism is moved to a lowermost position and the transport mechanism is stopped at the lowermost position. The system of claim 10, wherein the transport mechanism has a transport arm, and the second step includes the step of: extending the transport arm to carry the container to the storage rack portion, or When the container is carried from the storage rack portion, the transport arm is extended. The system of claim 10, wherein the semiconductor manufacturing apparatus includes a receiving and transporting mechanism configured to receive the container from the transporting mechanism and transport the container to the transporting portion, and the second The step includes the step of causing the receiving and transporting mechanism to hold the container while operating the receiving and transporting mechanism to receive the container from the transport portion and transport the container to the transport portion. A system for inhibiting the expansion of seismic damage according to claim 10, wherein the second step comprises the step of loading the holder into the furnace again when the lifting mechanism unloads the holder from the furnace. A system for inhibiting the expansion of seismic damage according to claim 10, wherein the semiconductor manufacturing apparatus includes a holder table on which the holder for transporting the object to be processed is placed, and configured to be locked in the A locking mechanism of the holder on the holder table, and the second step includes the step of locking the holder by the locking mechanism when the holder is placed on the holder.