TWI410518B - Vortex chamber lids for atomic layer deposition - Google Patents

Abstract

Embodiments of the invention relate to apparatuses and methods for depositing materials on substrates during atomic layer deposition processes. In one embodiment, a chamber for processing substrates is provided which includes a chamber lid assembly containing a centrally positioned gas dispersing channel, wherein a converging portion of the gas dispersing channel tapers towards a central axis of the gas dispersing channel and a diverging portion of the gas dispersing channel tapers away from the central axis. The chamber lid assembly further contains a tapered bottom surface extending from the diverging portion of the gas dispersing channel to a peripheral portion of the chamber lid assembly, wherein the tapered bottom surface is shaped and sized to substantially cover the substrate and two conduits are coupled to gas inlets within the converging portion of the gas dispersing channel and positioned to provide a circular gas flow through the gas dispersing channel.

Description

Vortex chamber cover for atomic layer deposition

Embodiments of the invention are generally related to apparatus and methods for atomic layer deposition. More particularly, embodiments of the present invention relate to improved gas delivery devices and methods for atomic layer deposition.

Reliably producing sub-micron and smaller features is one of the key technologies for manufacturing next-generation ultra-large integrated (VLSI) and very large integrated (ULSI) semiconductor components. However, as circuit technology pushes to the limit, VLSI and ULSI technologies require additional processing power in addition to the miniature interconnect size. Multilayer interconnects at the heart of the technology require precise handling of high aspect ratio features such as vias or other interconnects. Reliably forming interconnects and continuously increasing circuit density and substrate quality are important for completing VLSI and ULSI.

As circuit densities increase, interconnects such as vias, trenches, contact holes, and other features and the width of the dielectric material between them will shrink to 45 nanometers (nm) to 32 nm, but the thickness of the dielectric layer is substantial. It remains unchanged, which increases the aspect ratio of the feature structure. Many conventional deposition techniques are difficult to fill sub-micron structures with an aspect ratio of more than 4:1, especially those with an aspect ratio of more than 10:1. Therefore, continuous efforts are required to form a substantially non-porous or seamless high-aspect submicron feature.

Atomic Layer Deposition (ALD) is a deposition technique that attempts to deposit a layer of material to a feature of high aspect ratio. Examples of ALD processes include successive pulses Introduce a gas. For example, the entire cycle of successively introducing a gas may include introducing a first reaction gas into a pulse, then introducing a purge gas and/or using a pump to evacuate, then introducing a second reaction gas, followed by a pulse to introduce a purge gas. And / or use the pump to empty. The term "gas" as used herein may include a single gas or a plurality of gases. The sequential introduction of the individual first reactive gas and the second reactive gas may cause a single layer of reactants on the surface of the substrate to be self-limiting in turn, such that a single layer of material is formed per cycle. The cyclic process can be repeated until the deposited material reaches a predetermined thickness. The introduction of a pulse between the first reaction gas and the pulse introduced into the second reaction gas into the purge gas and/or the use of pump evacuation can reduce the excess reactants in the residual chamber to produce a gas phase reaction.

Accordingly, there is a need for an apparatus and method for depositing a layer of material during an atomic layer deposition process.

Embodiments of the present invention are directed to apparatus and methods for uniformly depositing materials onto a substrate during an atomic layer deposition (ALD) process. The uniformity of the deposited material is preferably attributed to the substrate being exposed to a deposition gas in an annular gas flow pattern, such as a vortex pattern. A chamber embodiment includes a chamber cover assembly that includes a centered enlarged passageway and a tapered bottom surface that tapers from the enlarged passageway toward the periphery of the chamber cover assembly. The tapered bottom surface is configured and sized to substantially cover the substrate receiving surface. Another chamber embodiment includes a chamber cover assembly that includes a gas distribution channel centered and having a manifold and a runner. Yet another chamber embodiment includes a chamber lid assembly that includes at least two gas passages surrounding the enlarged passage. Multiple entrances The body passage extends into the enlarged passage and is configured to provide an annular flow pattern throughout the enlarged passage.

In one embodiment, the present invention provides a chamber for treating a substrate comprising a substrate support and a chamber lid assembly comprising a substrate receiving surface. The chamber cover assembly includes a gas distribution passage in an intermediate portion of the chamber cover assembly, wherein the confluence portion of the gas distribution passage tapers toward the central axis of the gas distribution passage, and the diverting portion of the gas distribution passage tapers away from the central axis, and the conical bottom surface Extending from the diverting portion of the gas distribution channel to the periphery of the chamber cover assembly, and the tapered bottom surface is configured and sized to substantially cover the substrate receiving surface, the first conduit being coupled to the first gas inlet of the confluence portion of the gas distribution channel The second conduit is coupled to the second gas inlet of the confluence of the gas distribution passage, wherein the first conduit and the second conduit are arranged to provide an annular flow pattern throughout the gas distribution passage.

In an embodiment, the first conduit and the second conduit are each independently disposed to direct gas at the inner face of the confluence portion of the gas distribution passage. The annular flow pattern comprises a flow pattern selected from the group consisting of eddy currents, spirals, spirals, curls, twists, wraps, eddies, and derived patterns thereof. In some embodiments, the annular flow pattern extends at least one turn around the central axis of the gas distribution channel, preferably about 1.5 turns, about 2 turns, about 3 turns, about 4 turns, about the central axis of the gas distribution channel. Or more circles.

In some embodiments, the first valve is coupled to the first conduit, the second valve is coupled to the second conduit, the first gas source is in fluid communication with the first valve, and the second gas source is in fluid communication with the second valve. The first valve and the second valve may cause the atomic layer deposition process to have a pulse time of about 2 seconds or less, such as from about 0.05 seconds to about 0.5 seconds. In other embodiments, the first conduit and the second conduit are each independently set The central axis of the gas distribution channel is inclined by more than 0 degrees.

The processing chamber may further comprise a reaction zone having a volume of about 3000 cubic centimeters (cm ³ ) or less, and the reaction zone is located between the tapered bottom surface and the substrate receiving surface. The volume can be about 1500 cm ³ or less, such as about 600 cm ³ or less.

In another embodiment, the present invention provides a chamber for treating a substrate comprising a substrate support having a substrate receiving surface, and the chamber cover assembly includes a gas distribution channel at an intermediate portion of the chamber cover assembly, Wherein the confluence portion of the gas distribution channel tapers toward the central axis of the gas distribution channel, the diverting portion of the gas distribution channel is tapered away from the central axis, and the first conduit is coupled to the first gas inlet of the confluence portion of the gas distribution channel, The second conduit is coupled to the second gas inlet of the confluence portion of the gas distribution channel, wherein the first conduit and the second conduit are disposed to form an annular airflow pattern, the first valve is coupled to the first conduit, and the second valve is coupled to the second conduit, The first valve and the second valve may cause the atomic layer deposition process to have a pulse time of about 2 seconds or less.

In an embodiment, the chamber lid assembly further includes a tapered bottom surface extending from the diverting portion of the gas distribution passage to the periphery of the chamber lid assembly. The tapered bottom surface can be configured and sized to substantially cover the substrate receiving surface. In other embodiments, the first gas source is in fluid communication with the first valve and the second gas source is in fluid communication with the second valve, and the first conduit and the second conduit are each independently disposed to direct the confluence of the gas distribution channel The gas at the inside. The annular flow pattern comprises a flow pattern selected from the group consisting of eddy currents, spirals, spirals, curls, twists, wraps, vortices, and derived patterns thereof. In other embodiments, the surface roughness of the inner surface of the enlarged channel increases along a central axis extending through the enlarged channel (eg, from a plurality of second inlets extending into the enlarged channel to the substrate support).

In yet another embodiment, the present invention provides a method of depositing a material onto a substrate comprising placing a substrate on a substrate support within the processing chamber, and the processing chamber includes a chamber body and a chamber lid assembly, wherein the chamber lid assembly The gas distribution channel is disposed in an intermediate portion of the chamber cover assembly, wherein the confluence portion of the gas distribution channel is tapered toward the central axis of the gas distribution channel, and the diverting portion of the gas distribution channel is tapered away from the central axis, and the conical bottom surface is from the gas The diverting portion of the distribution channel extends to the periphery of the chamber cover assembly, and the tapered bottom surface is configured and sized to substantially cover the substrate, the first conduit being coupled to the first gas inlet of the confluence portion of the gas distribution channel, the second conduit a second gas inlet coupled to the confluence portion of the gas distribution channel, wherein the first conduit and the second conduit are disposed to provide an annular gas flow pattern; the at least one carrier gas stream is passed through the first and second conduits to form an annular flow gas; The material is exposed to the annular flow gas; the pulse is introduced into the at least one precursor to the annular flow gas; and the material comprising at least one element derived from the at least one precursor is deposited onto the substrate .

In still another embodiment, the present invention provides a chamber for treating a substrate comprising a substrate support comprising a substrate receiving surface, and the chamber cover assembly includes a device extending along the central axis and located in the chamber cover assembly An enlarged passage of the intermediate portion, the tapered bottom surface extending from the enlarged passage to the periphery of the chamber cover assembly, wherein the tapered bottom surface is configured and sized to substantially cover the substrate receiving surface, the first conduit being coupled to the first gas passage, The first gas passage surrounds the enlarged passage and includes a plurality of first inlets extending into the enlarged passage, the second conduit is coupled to the second gas passage, and the second gas passage surrounds the enlarged passage and includes a plurality of second inlets extending into the enlarged passage And wherein the plurality of first inlets and the plurality of second inlets are arranged to provide an annular flow pattern throughout the enlarged passage.

In an embodiment, the first gas passage is disposed directly above the second gas passage, and the first gas passage and the second gas passage both bypass the upper portion of the passage. The plurality of first inlets and the plurality of second inlets are each independently disposed to direct the gas at the inner surface of the enlarged passage. The annular flow pattern comprises a flow pattern selected from the group consisting of eddy currents, spirals, spirals, curls, twists, wraps, eddies, and derived patterns thereof. In other embodiments, the first valve is coupled to the first conduit, the second valve is coupled to the second conduit, the first gas source is in fluid communication with the first valve, and the second gas source is in fluid communication with the second valve . The first valve and the second valve may cause the atomic layer deposition process to have a pulse time of about 2 seconds or less, such as about 1 second or less, or about 0.05 second to about 0.5 second.

In another embodiment, the present invention provides a chamber for treating a substrate, comprising a chamber lid assembly, and the chamber lid assembly includes an enlarged passage extending along the central axis and located in a middle portion of the chamber lid assembly, a conduit is coupled to the first gas passage, the first gas passage surrounds the enlarged passage and includes a plurality of first inlets extending into the enlarged passage, the second conduit is coupled to the second gas passage, and the second gas passage surrounds the enlarged passage and includes a plurality of second inlets extending into the enlarged passage, wherein the plurality of first inlets and the plurality of second inlets are disposed to provide an annular flow pattern throughout the enlarged passage, the first valve being coupled to the first conduit and the second valve coupled To the second conduit, wherein the first valve and the second valve may cause the atomic layer deposition process to have a pulse time of about 2 seconds or less, such as about 1 second or less, or about 0.05 second to about 0.5 second.

In yet another embodiment, the present invention provides a method of depositing a material onto a substrate, comprising placing a substrate on a substrate support within the processing chamber, and the processing chamber includes a chamber lid assembly, wherein the chamber lid assembly includes Central axis extension And an enlarged passageway located in a middle portion of the chamber cover assembly, the tapered bottom surface extending from the enlarged passage to the periphery of the chamber cover assembly, wherein the tapered bottom surface is configured and sized to substantially cover the substrate receiving surface, and the first conduit is coupled To the first gas passage, the first gas passage surrounds the enlarged passage and includes a plurality of first inlets extending into the enlarged passage, the second conduit is coupled to the second gas passage, and the second gas passage surrounds the enlarged passage and includes a plurality of extensions Enlarging a second inlet of the passage, wherein the plurality of first inlets and the plurality of second inlets are arranged to provide an annular flow pattern throughout the enlarged passage; forming at least one carrier flow through the plurality of first inlets or a plurality of second inlets An annular flow gas; exposing the substrate to the annular flow gas; pulse introducing at least one precursor into the annular flow gas; and depositing a material comprising at least one element derived from the at least one precursor onto the substrate.

In still another embodiment, the present invention provides a chamber for treating a substrate, comprising a chamber lid assembly, and the chamber lid assembly includes an enlarged passageway in a middle portion of the chamber lid assembly, wherein the upper portion of the enlarged passageway is substantially The central axis of the parallel enlarged passage extends, and the expanded portion of the enlarged passage is tapered away from the central axis, and the inner surface roughness of the upper portion of the enlarged passage is lower than the inner surface roughness of the expanded portion of the enlarged passage, and the tapered bottom surface is enlarged from the passage The deployment portion extends to the periphery of the chamber cover assembly, wherein the tapered bottom surface is configured and sized to substantially cover the substrate receiving surface, the first conduit is coupled to the first gas inlet above the enlarged passage, and the second conduit is coupled And a second gas inlet to the upper portion of the enlarged passage, wherein the first conduit and the second conduit are arranged to provide an annular flow pattern throughout the enlarged passage.

In other embodiments, the present invention provides a chamber for treating a substrate a chamber comprising a chamber cover assembly, and the chamber cover assembly includes an enlarged passageway in the intermediate portion of the chamber cover assembly, wherein the upper portion of the enlarged passageway extends substantially parallel to the central axis of the enlarged passageway, and the expanded portion of the enlarged passageway extends away from the central axis Thinning, the first conduit is coupled to the first gas inlet above the enlarged passage, and the second conduit is coupled to the second gas inlet above the enlarged passage, wherein the first conduit and the second conduit are arranged to provide an annular flow pattern The first valve is coupled to the first conduit, and the second valve is coupled to the second conduit, wherein the first valve and the second valve can cause the atomic layer deposition process to have a pulse time of about 2 seconds or less. The chamber cover assembly further includes a tapered bottom surface extending from the flared portion of the enlarged passage to the periphery of the chamber cover assembly.

In another embodiment, the present invention provides a method of depositing a material onto a substrate comprising placing a substrate on a substrate support within a processing chamber, and the processing chamber comprising a chamber body and a chamber lid assembly, wherein the chamber lid assembly An enlarged passageway is provided in an intermediate portion of the chamber cover assembly, and an upper portion of the enlarged passageway extends substantially parallel to a central axis of the enlarged passageway, the expanded portion of the enlarged passageway is tapered away from the central axis, and the tapered bottom surface extends from the expanded portion of the enlarged passageway Adjacent to the chamber cover assembly, wherein the tapered bottom surface is configured and resized to substantially cover the substrate, the first conduit is coupled to the first gas inlet above the enlarged passage, and the second conduit is coupled to the upper portion of the enlarged passage a second gas inlet, wherein the first conduit and the second conduit are arranged to provide an annular flow pattern; the at least one carrier gas flows through the first and second conduits to form an annular flow gas; the substrate is exposed to the annular flow gas; the pulse Introducing at least one precursor into the annular flowing gas; and depositing a material comprising at least one element derived from the at least one precursor onto the substrate. The annular flow pattern includes a flow pattern selected from the group consisting of eddy currents, A group of spirals, spirals, curls, twists, wraps, vortices, and derived patterns.

In still another embodiment, the present invention provides a chamber for treating a substrate comprising a substrate support comprising a substrate receiving surface and a chamber cover assembly, the chamber cover assembly including in the middle portion of the chamber cover assembly Gas distribution channel. The confluence portion of the gas distribution channel tapers toward the central axis of the gas distribution channel, the diverting portion of the gas distribution channel tapers away from the central axis, and the conical bottom surface extends from the diverting portion of the gas distribution channel to the periphery of the chamber cover assembly, and The tapered bottom surface is configured and sized to substantially cover the substrate receiving surface. The processing chamber may further include a first conduit coupled to the first gas inlet of the confluence portion of the gas distribution passage and a second conduit coupled to the second gas inlet of the confluence portion of the gas distribution passage. The first conduit and the second conduit are arranged to provide an annular flow pattern throughout the gas distribution passage.

In still another embodiment, the present invention provides a chamber for treating a substrate, comprising a substrate support comprising a substrate receiving surface and a chamber cover assembly, the chamber cover assembly extending along the central axis and located An enlarged passageway in the middle of the chamber cover assembly. The lid assembly may further include a tapered bottom surface extending from the enlarged passage to the periphery of the chamber cover assembly. The tapered bottom surface is configured and sized to substantially cover the substrate receiving surface. The chamber cover assembly can also include a first conduit coupled to the first gas passage and a second conduit coupled to the second gas passage, wherein each gas passage surrounds the enlarged passage and includes a plurality of inlets extending into the enlarged passage. A plurality of inlets can be provided to provide an annular flow pattern throughout the enlarged passage.

In an embodiment, the processing chamber may include a first valve coupled to the first conduit And a second valve coupled to the second conduit, wherein the first valve and the second valve can initiate an ALD process. The pulse time of the ALD process is about 2 seconds or less, for example about 1 second or less. In other embodiments, the ALD process has a pulse time of from about 0.05 seconds to about 0.5 seconds. Generally, the first gas source is in fluid communication with the first valve and the second gas source is in fluid communication with the second valve.

In some embodiments, the first conduit and the second conduit are each independently disposed to direct gas at the inner face of the confluence of the gas distribution passage. Thus, the first conduit and the second conduit can each be independently disposed to be inclined to the central axis of the gas distribution passage (eg, greater than 0 degrees). Alternatively, the plurality of first inlets and the plurality of second inlets are each independently disposed to direct gas at the inner surface of the enlarged passage. Thus, the plurality of first inlets and the plurality of second inlets can each be independently disposed to be inclined to the central axis of the enlarged passage (eg, greater than 0 degrees). The annular airflow pattern may include a flow pattern such as a vortex pattern, a spiral pattern, a spiral pattern, a curl pattern, a twist pattern, a wound pattern, a swirl pattern, or a derivative thereof. The annular flow pattern may extend at least about 1.5 turns around the central axis of the gas distribution channel or the enlarged channel, preferably about 2 turns, more preferably about 3 turns, and even more preferably about 4 turns. In other embodiments, the processing chamber can include a reaction zone between the tapered bottom surface and the substrate receiving surface. The volume of the reaction zone is about 3000 cm ³ or less. In one embodiment, the volume is about 1500 cm ³ or less. In another embodiment, the volume is about 600 cm ³ or less. The volume can be adjusted by placing the substrate support laterally.

In another embodiment, the present invention provides a method of depositing a material onto a substrate comprising placing a substrate on a substrate support within a processing chamber, and the processing chamber comprising a chamber body and a chamber lid assembly, wherein the chamber lid assembly Contains the cover The gas distribution channel in the middle of the assembly. The gas distribution path includes a confluent portion that tapers toward a central axis of the gas distribution channel and a diverting portion that tapers away from the central axis. The chamber lid assembly further includes a tapered bottom surface extending from the diverting portion of the gas distribution passage to the periphery of the chamber lid assembly. The tapered bottom surface can be configured and sized to substantially cover the substrate. Further, the chamber cover assembly may further include a first conduit coupled to the first gas inlet of the confluence portion of the gas distribution passage and a second conduit coupled to the second gas inlet of the confluence portion of the gas distribution passage. The first conduit and the second conduit are arranged to provide an annular flow pattern.

The method further includes forming an annular flowing gas by flowing at least one carrier gas through the first and second conduits; exposing the substrate to the annular flowing gas; introducing at least one precursor into the annular flowing gas by the pulse; and depositing at least one source The material of at least one element of the precursor is applied to the substrate. In one embodiment, at least two chemical precursors are sequentially pulsed into the annular flow gas during the atomic layer deposition process. In another embodiment, at least three chemical precursors are sequentially pulsed into the annular flow gas during the atomic layer deposition process.

In yet another embodiment, the present invention provides a method of depositing a material onto a substrate comprising placing a substrate on a substrate support within the processing chamber, and the processing chamber includes a chamber body and a chamber lid assembly, wherein the chamber lid assembly An enlarged passageway extending along the central axis and located in the middle portion of the chamber cover assembly. The chamber cover assembly can further include a tapered bottom surface extending from the enlarged passageway to the periphery of the chamber cover assembly, wherein the tapered bottom surface is configured and sized to substantially cover the substrate receiving surface. Moreover, the chamber cover assembly may further include a first conduit coupled to the first gas passage, and the first gas passage surrounds the enlarged passage and includes a plurality of first inlets extending into the enlarged passage, and the chamber cover assembly further includes coupling to the first Second gas passage A second conduit, wherein the second gas passage surrounds the enlarged passage and includes a plurality of second inlets extending into the enlarged passage, the plurality of first inlets and the plurality of second inlets being disposed to provide an annular flow pattern throughout the enlarged passage.

The method further includes forming at least one carrier gas stream through the plurality of first inlets and the plurality of second inlets to form an annular flowing gas; exposing the substrate to the annular flowing gas; pulse introducing at least one precursor into the annular flowing gas; and depositing A material comprising at least one element derived from at least one precursor onto the substrate. In one embodiment, at least two chemical precursors are sequentially pulsed into the annular flow gas during the atomic layer deposition process. In another embodiment, at least three chemical precursors are sequentially pulsed into the annular flow gas during the atomic layer deposition process.

In still another embodiment, the present invention provides a processing chamber including a substrate support having a substrate receiving surface and a chamber cover having a passage in a middle portion of the chamber cover and a tapered bottom surface extending from the passage to the periphery of the chamber cover . The bottom surface of the chamber cover is configured and sized to substantially cover the substrate receiving surface. One or more valves are coupled to the passage and one or more gas sources are coupled to the respective valves. In one aspect, the bottom surface of the chamber cover is tapered. In another aspect, the reaction zone between the chamber cover and the substrate receiving surface can have a smaller volume. In yet another aspect, the channel includes a tapered enlarged channel extending from a middle portion of the chamber cover.

In another embodiment, the present invention provides a method of depositing a layer of material to cover a substrate structure, comprising delivering a first reactant gas and a first purge gas via a first gas conduit, wherein the first reactant gas is pulsed. The first purge gas is continuously conveyed. The method further includes delivering a second reactive gas and a second purge gas via the second gas conduit, wherein the second The reaction gas is pulsed and the second gas is continuously transported.

In yet another embodiment, the present invention provides a method of depositing a layer of material to cover a substrate structure, the method comprising: transporting a gas to a substrate within a substrate processing chamber, the method comprising: providing one or more gases to a substrate processing chamber; Non-adiabatic expansion reduces the gas flow rate; provides a gas to the intermediate portion of the substrate; and directs gas from the intermediate portion of the substrate radially across the substrate against the periphery of the substrate.

Embodiments of the present invention provide apparatus and methods for depositing materials during an atomic layer deposition (ALD) process. Embodiments include an ALD process chamber and a gas delivery system that can include an enlarged channel type upper cover assembly, a confluent/split type upper cover assembly, a multiple injection type upper cover assembly, or an enlarged cover type upper cover assembly.

Expanded channel type upper cover assembly

1 depicts a cross section of one embodiment of a processing chamber 200 that includes a gas delivery system 230 for atomic layer deposition (ALD) or continuous layer deposition. The processing chamber 200 includes a chamber body 202 having a side wall 204 and a bottom portion 206. The slit valve 208 of the processing chamber 200 can be accessed by a mechanical device (not shown) into and out of the processing chamber 200 to transfer and retrieve the substrate 210, such as a 200 mm (mm) or 300 mm semiconductor wafer or glass substrate.

The substrate support 212 supports the substrate 210 on the substrate receiving surface 211 in the processing chamber 200. The substrate support 212 is mounted to an elevator motor 214, It is used to raise and lower the substrate support 212 and the substrate 210 placed thereon. A lift plate 216 coupled to the lift motor 218 is disposed within the process chamber 200 for raising and lowering the lift pins 220 that are movable through the substrate support 212. The lift pins 220 raise and lower the substrate 210 on the surface of the substrate support 212. The substrate support 212 can include a vacuum holder (not shown), an electrostatic chuck (not shown), or a clamp ring (not shown) to secure the substrate 210 to the substrate support 212 during the process. .

The substrate support 212 can be heated to heat the substrate 210 placed thereon. For example, the embedded support member 212 such as a resistive heater (not shown) may be used to heat the substrate support 212, or a radiant heat such as a heat lamp (not shown) disposed above the substrate support 212 may be used. Heat up. A purge ring 222 can be placed on the substrate support 212 to define a purge passage 224 to provide a purge gas to the periphery of the substrate 210 to prevent deposits from depositing thereon.

A gas delivery system 230 is provided at an upper portion of the chamber body 202 for supplying a process chamber 202 gas, such as a process gas and/or a purge gas. The vacuum system 278 is coupled to the suction channel 279 to discharge any predetermined gas out of the processing chamber 202 and to assist the suction zone 266 of the processing chamber 202 to maintain a predetermined pressure or to maintain a predetermined pressure range.

In an embodiment, the gas delivery system 230 includes a chamber lid assembly 232. The chamber cover assembly 232 includes an enlarged passage 234 extending from a middle portion of the chamber cover assembly 232 and a lower surface 260 extending from the enlarged passage 234 to the periphery of the chamber cover assembly 232. The lower surface 260 is configured and sized to substantially cover the substrate 210 on the substrate support 212. The enlarged passage 234 has gas inlets 236a, 236b for providing two sets of similar valves 242a/252a, The airflow of 242b/252b, which may be provided together or individually.

In one configuration, valve 242a and valve 242b are coupled to different sources of reactive gas, but are preferably coupled to the same source of purge gas. For example, the valve 242a is coupled to the reactive gas source 238, the valve 242b is coupled to the reactive gas source 239, and the two valves 242a, 242b are coupled to the purge gas source 240. Valves 242a, 242b each include a transfer line 243a, 243b having a valve seat assembly 244a, 244b, each of which includes an evacuation line 245a, 245b having a valve seat assembly 246a, 246b. The transfer lines 243a, 243b are connected to the reaction gas sources 238, 239, and are connected to the gas inlets 236a, 236b of the enlarged passage 234. The valve seat assemblies 244a, 244b of the transfer lines 243a, 243b control the flow of reactant gases from the reactive gas sources 238, 239 to the enlarged passage 234. The evacuation lines 245a, 245b connect the purge gas source 240 and intersect the transfer lines 243a, 243b downstream of the valve seat assemblies 244a, 244b of the transfer lines 243a, 243b. The valve seat assemblies 246a, 246b of the evacuation lines 245a, 245b control the flow of purge gas from the purge gas source 240 to the expansion passage 234. If the carrier gas is used to transport the reaction gases of the reaction gas sources 238, 239, the carrier gas is preferably the same as the purge gas (for example, argon gas is used as the carrier gas and the purge gas).

The valve seat assemblies 244a, 244b, 246a, 246b can each include a baffle (not shown) and a valve seat (not shown). Applying a bias or starting it can open or close the partition. The partition can be pneumatic or electric. Pneumatic valves include pneumatic valves available from Fujikin and Veriflow. The electric valve includes an electric valve available from Fujikin Corporation. For example, the ALD valve may be a Fujikin model FPR-UDDFAT-21-6.35-PI-ASN or a Fujikin model FPR-NHDT-21-6.35-PA-AYT. Programmable logic controller 248a, 248b is coupled to valves 242a, 242b for controlling the activation of the diaphragms of valve seat assemblies 244a, 244b, 246a, 246b of valves 242a, 242b. The gas pulse period generated by the pneumatic valve can be 0.020 seconds. The electric valve produces a gas pulse period of 0.005 seconds. Motorized valves typically require a drive that is connected between the valve and the programmable logic controller.

Valves 242a, 242b, respectively, may be zero dead volume valves that flush the reactant gases of transfer lines 243a, 243b when valve seat assemblies 244a, 244b are closed. For example, the evacuation lines 245a, 245b can be provided with valve seat assemblies 244a, 244b that abut the transfer lines 243a, 243b. When the valve seat assemblies 244a, 244b are closed, the vent lines 245a, 245b may supply purge gas to flush the transfer lines 243a, 243b. In the illustrated embodiment, the vent lines 245a, 245b are slightly spaced from the valve seat assemblies 244a, 244b of the transfer lines 243a, 243b such that the purge gas does not feed directly into the valve seat assembly 244a when the valve seat assemblies 244a, 244b are opened. 244b. The zero invalid volume valve here means that the valve has a negligible invalid volume (ie, the invalid volume is not necessarily zero).

Each set of valves 242a/252a, 242b/252b can be used to provide a combined gas flow and/or individual gas flow of reactive gas to purge gas. Referring to valves 242a/252a, examples of combined gas streams of reactive gas and purge gas include a continuous purge gas from purge gas source 240 and flowing through evacuation line 245a, and a reaction gas pulse from reaction gas source 238 and flowing through transfer line 243a. The purge gas can be continuously supplied by opening the separator of the valve seat assembly 246a of the evacuation line 245a. The reactant gas of the reactive gas source 238 can be pulsed by opening and closing the separator of the valve seat assembly 244a of the transfer line 243a. Reference valve 242a/252a, examples of individual gas streams of reactive gas and purge gas include purge gas pulses from purge gas source 240 and flowing through evacuation line 245a and reaction gas pulses from reaction gas source 238 and flowing through transfer line 243a. The purge gas can be pulsed by opening and closing the separator of the valve seat assembly 246a of the evacuation line 245a. The reactant gas of the reactive gas source 238 can be pulsed by opening and closing the separator of the valve seat assembly 244a of the transfer line 243a.

Delivery lines 243a, 243b of valves 242a, 242b may be coupled to gas inlets 236a, 236b via gas conduits 250a, 250b. The gas conduits 250a, 250b can be integral or separate components of the valves 242a, 242b. In one aspect, the valves 242a, 242b are in close proximity to the enlarged passage 234, which reduces the unnecessary configuration volume of the transfer lines 243a, 243b and the gas conduits 250a, 250b between the valves 242a, 242b and the gas inlets 236a, 236b.

Referring to Figure 3, the gas conduit 250a or 250b and the gas inlets 236a, 236b can be disposed in any angular relationship with the longitudinal axis 290 of the enlarged passage 234. The gas conduit 250a or 250b and the gas inlets 236a, 236b are preferably perpendicular to the longitudinal axis 290 (where +β, -β = 90 ∘), or the centerlines 302a, 302b of the gas conduits 250a, 250b are angled with the longitudinal axis 290 +β or -β (where 0 ∘ < + β < 90 ∘ or 0 ∘ < - β < 90 ∘). As shown in Fig. 3, the gas conduits 250a, 250b may be horizontally disposed perpendicular to the longitudinal axis 290, or may be inclined downward by +β angle or upwardly by -β angle to allow gas to flow toward the wall of the enlarged passage 234 rather than flowing directly downward. The material 210, which helps to reduce the likelihood of blowing down the reactants adsorbed on the surface of the substrate 210. In addition, the gas conduits 250a, 250b extend from the delivery lines 243a, 243b of the valves 242a, 242b to the gas inlets 236a, 236b. The diameter can be gradually increased to help slow down the gas flow before the gas enters the enlarged passage 234. For example, the inner diameter of the gas conduits 250a, 250b may be gradually increased, or the gas conduits 250a, 250b may comprise a plurality of connected conduits of increasing inner diameter.

Referring to Figure 1, the enlarged passage 234 includes a passage having an inner diameter that increases from the upper portion 237 of the enlarged passage 234 to the lower portion 235 of the lower surface 260 of the adjacent chamber cover assembly 232. In a particular embodiment, the enlarged passage 234 of the chamber for treating a substrate having a diameter of 200 mm has an inner diameter of from about 0.2 inches to about 1.0 inch, preferably about 0.3 inches, at the upper portion 237 of the enlarged passage 234. To about 0.9 inches, more preferably from about 0.3 inches to about 0.5 inches, the inner diameter of the lower portion 235 of the enlarged passage 234 is from about 0.5 inches to about 3.0 inches, preferably about 0.75 inches to about 2.5 inches, preferably about 1.1 inches to about 2.0 inches. In another particular embodiment, the enlarged passage 234 of the chamber for treating a substrate having a diameter of 300 mm has an inner diameter of from about 0.2 inches to about 1.0 inch, preferably about 0.3 inches, at the upper portion 237 of the enlarged passage 234. The crucible is about 0.9 inches, more preferably about 0.3 inches to about 0.5 inches, and the inner diameter of the lower portion 235 of the enlarged passage 234 is from about 0.5 inches to about 3.0 inches, preferably about 0.75 inches. About 2.5 inches, more preferably about 1.2 inches to about 2.2 inches. The above dimensions are generally suitable for expanding channels that supply a total gas flow of from about 500 sccm to about 3000 sccm. In other particular embodiments, the size can be varied for a particular gas flow to flow through. In general, the larger the gas flow rate, the larger the diameter size required to enlarge the passage. In an embodiment, the enlarged channel 234 can be configured to form a truncated cone (including a shape resembling a truncated cone). Whether the gas flows toward the wall of the enlarged channel 234 or flows directly down to the substrate 210, As the gas flows through the enlarged passage 234, gas expansion will cause the airflow speed to decrease. The slower air flow rate helps to reduce the likelihood of blowing down the reactants adsorbed on the surface of the substrate 210.

Without wishing to be bound by theory, the increase in the inner diameter of the enlarged channel 234 from the upper portion 237 of the enlarged channel 234 to the lower portion 235 allows less adiabatic expansion of the gas passing through the enlarged channel 234, which helps to control the gas temperature. For example, a sudden adiabatic expansion of the gas entering the enlarged passage 234 via the gas inlets 236a, 236b will cause the gas temperature to drop, causing the gas to condense to form droplets. On the other hand, the increasing enlargement of the passage 234 of the embodiment of the invention allows the gas to generate less adiabatic expansion. Therefore, there is more heat exchange with the gas, so it is easier to control the gas temperature by controlling the ambient temperature of the gas (i.e., controlling the temperature of the chamber cover assembly 232). The incremental enlarged channel 234 can include one or more tapered inner faces, such as tapered faces, concave faces, convex faces, or combinations thereof, or can include one or more tapered inner faces (ie, a portion of the cone) Shape, part is not tapered).

In an embodiment, the gas inlets 236a, 236b are adjacent the upper portion 237 of the enlarged passage 234. In other embodiments, one or more gas inlets 236a, 236b are disposed between upper portion 237 and lower portion 235 along the entire length of enlarged passage 234.

2 is a top cross-sectional view of the enlarged passage 234 of the chamber cover assembly 232 of the first embodiment. The centerlines 302a, 302b of the gas conduits 250a, 250b are respectively at an angle a to the radial line 304 passing through the center of the enlarged passage 234. The inlet of the gas inlet gas conduits 250a, 250b is preferably disposed at an angle of inclination α (where α > 0 ∘) such that the gas is oriented in the direction of the circle indicated by arrows 310a, 310b. flow. Supplying the gas at the angle of inclination α without directly flowing to the wall of the enlarged passage (i.e., a = 0 ∘) helps to form a laminar flow rather than a turbulent flow through the enlarged passage 234. The laminar laminar flow facilitates removal of the inner surface of the enlarged passage 234 and other surfaces of the chamber cover assembly 232 by expanding the passage 234. In contrast, turbulence does not flow uniformly through the inner and other surfaces of the enlarged passage 234 and may contain dead angles that the airflow cannot reach. In one aspect, the gas conduits 250a, 250b and the corresponding gas inlets 236a, 236b are spaced apart from one another and direct the gas flow in the same annular direction (ie, clockwise or counterclockwise).

Unexpectedly limited by theory, Figure 3 is a cross-sectional view of the enlarged channel 234 of the chamber lid assembly 232, which illustrates the flow of two gases therethrough. Although it is not known exactly by the flow pattern of the enlarged passage 234, the sinusoidal flow 310 (shown by arrows 310a, 310b in Fig. 2) can be indicated by arrows 402a, 402b (hereinafter referred to as "eddy current" flow 402). Flow, swirling flow, swirling flow, fast swirling flow, twisting flow, winding flow, tortuous flow, crimping flow, swirling flow, or its derived flow flow through the enlarged passage 234.

As shown in FIG. 3, the annular flow is formed in the "processing zone" rather than the space separating the substrate 210. In one aspect, the vortex flow helps to evacuate the enlarged passage 234 more efficiently because the vortex flow pattern sweeps the entire inner surface of the enlarged passage 234.

In an embodiment, the distance 410 between the gas inlets 236a, 236b and the substrate 210 is sufficient to allow the vortex flow 402 to dissipate the flow 404 downward when it is not expected to flow over the surface of the substrate 210. The salty vortex flow 402 and the downward flow 404 travel in a laminar flow manner, which effectively removes the chamber cover The surface of the piece 232 and the substrate 210. In a particular embodiment, the distance 410 between the upper portion 237 of the enlarged channel 234 and the substrate 210 is from about 3 inches to about 8 inches, preferably from about 3.5 inches to about 7 inches, more preferably about 4 inches. Miles to about 6 inches, for example 5 inches.

Referring to Figure 1, at least a portion of the lower surface 260 of the chamber cover assembly 232 tapers from the enlarged passage 234 to the periphery of the chamber cover assembly 232 to provide gas flow from the enlarged passage 234 through the surface of the substrate 210 (i.e., from the center of the substrate to the base). The preferred velocity waveform of the edge of the material. The lower surface 260 can include one or more tapered faces, such as a flat surface, a concave surface, a convex surface, or a combination thereof. In one embodiment, the lower surface 260 is a tapered funnel shape.

Unexpectedly limited by theory, FIG. 4 illustrates the flow of gas at two different locations 502, 504 between the lower surface 260 of the chamber lid assembly 232 and the surface of the substrate 210. The airflow velocity at a certain position can theoretically be expressed as follows: (1) Q/A = V where "Q" represents the gas flow rate and "A" represents the flow cross-sectional area. "V" represents the airflow speed. The airflow velocity is inversely proportional to the area "A" (H _x 2πR) of the flow section, where "H" is the height of the flow section and 2πR is the perimeter of the flow section of radius "R". In other words, the airflow velocity is inversely proportional to the height "H" of the flow section and the radius "R" of the flow section.

Comparing the velocity of the flow section of position 502 and position 504, it is assumed that the gas flow rate "Q" is equal to all positions between the lower surface 260 of the chamber cover assembly 232 and the surface of the substrate 210, and if the area of the flow section "A" is as large, then The airflow velocity is theoretically the same. If the area of the flow section of position 502 and position 504 is as large, the height H _{1 of} position 502 should be greater than the height H _{2 of} position 504.

In one aspect, the lower surface 260 is sloped downward to reduce the difference in speed between the lower surface 260 of the chamber cover 232 and the substrate 210, thereby uniformly contacting the surface of the substrate 210 with the reactive gas. In one embodiment, the flow cross section between the downwardly inclined lower surface 260 of the chamber lid assembly 232 and the surface of the substrate 210 has a ratio of the largest area to the smallest area of less than 2, preferably less than 1.5, more preferably less than 1.3. Good again is 1.

Without wishing to be bound by theory, the salty gas stream will more uniformly deposit on the substrate 210 over the surface of the substrate 210 at a more uniform rate. The salt flow rate is proportional to the gas concentration and is therefore proportional to the rate at which the gas is deposited on the surface of the substrate 210. Therefore, the surface area of the first substrate having a faster gas flow rate has a faster gas deposition rate with respect to the surface area of the second substrate. The chamber cover assembly 232, which slopes down the lower surface 260, allows the gas to deposit more evenly across the surface of the substrate 210, since the downwardly sloped lower surface 260 produces a more uniform velocity, so that the gas spreads over the substrate. The concentration of the 210 surface is more uniform.

Referring to Fig. 1, a choke 262 is disposed around the chamber cover assembly 232 adjacent the edge of the substrate 210. When the chamber cover assembly 232 is assembled to form a treatment zone around the substrate 210, the choke valve 262 includes any member that restricts gas flow through the vicinity of the edge of the substrate 210. Section 9A depicts a cross section of one embodiment of the choke 262. In this embodiment, the choke 262 includes a peripheral lateral portion 267. In one aspect, the purge ring 222 is used to direct the purge gas to the lateral side 267 of the choke 262. FIG. 9B illustrates a cross section of another embodiment of the choke valve 262. In this embodiment, the choke 262 includes a downward circumference An extended protrusion 268. In one aspect, the purge ring 222 is used to direct the purge gas to a downwardly extending projection 268. In a particular embodiment, the downwardly extending projection 268 has a thickness of from about 0.01 inches to about 1.0 inch, preferably from about 0.01 inches to about 0.5 inches.

In a particular embodiment, the distance between the choke valve 262 and the substrate support 212 is from about 0.04 inches to about 2.0 inches, preferably from about 0.04 inches to about 0.2 inches. The spacing can vary depending on the delivery gas and deposition process conditions. Separating the pressure zone from the reaction zone 264 and the suction zone 266 (Fig. 1) by the choke 262 allows the volume defined within the chamber cover assembly 232 and the substrate 210 or the pressure distribution within the reaction zone 264 to be more Evenly.

Referring to Fig. 1, in one aspect, since the reaction zone 264 and the suction zone 266 have been separated, the reaction gas or purge gas only needs to be appropriately filled in the reaction zone 264 to allow the substrate 210 to sufficiently contact the reaction gas or the purge gas. In conventional chemical vapor deposition, conventional chambers need to simultaneously and uniformly supply a combined gas flow of a reactive gas to the entire surface of the substrate to ensure that the reaction gases uniformly react with each other across the surface of the substrate. In the atomic layer deposition, the processing chamber 200 successively introduces a reaction gas to the surface of the substrate 210, so that a thin layer of the reactant is alternately adsorbed on the surface of the substrate 210. Therefore, the atomic layer deposition does not require the reaction gas to reach the surface of the substrate 210 at the same time, but instead, a sufficient amount of reaction gas is supplied to adsorb the thin layer of the reactant on the surface of the substrate 210.

Since the volume of the reaction zone 264 is smaller than the internal volume of a conventional CVD chamber, less gas is required to fill the reaction zone 264 for the particular process of the atomic layer deposition process. For example, in the embodiment of a chamber for treating a substrate having a diameter of 200 mm, the volume of the reaction zone 264 is about 1000 cm ³ or less, preferably about 500 cm ³ or less, more preferably about 200 cm ³ or less. For example, a chamber embodiment for treating a substrate having a diameter of 300 mm, the volume of the reaction zone 264 is about 3000 cm ³ or less, preferably about 1500 cm ³ or less, more preferably about 600 cm ³ or less. In an embodiment, the substrate support 212 can be raised or lowered to adjust the volume of the reaction zone 264 for deposition. The smaller the volume of the reaction zone 264, the less the amount of deposition gas or the amount of purge gas that needs to flow into the process chamber 200. Due to the reduced amount of gas, it can increase the capacity of the processing chamber 200 and reduce waste, thereby reducing operating costs.

The lid assembly 232 of Figures 1-4 includes a cover 272 and a cover 270, wherein the cover 272 and cover 270 form an enlarged channel 234. An additional plate (not shown) may be placed between the cover 272 and the cover 270. The additional plate is used to adjust (e.g., enlarge) the spacing of the cover 272 from the cover plate 270, whereby the length of the enlarged passage 234 formed thereby can be varied. In other embodiments, the enlarged channel 234 can be comprised of a single material.

Depending on the gas to be delivered, the chamber lid assembly 232 can include a cooling element and/or a heating element. The temperature of the control chamber cover assembly 232 prevents gases from decomposing, depositing, or condensing on the chamber cover assembly 232. For example, a water channel (not shown) may be provided in the chamber cover assembly 232 to cool the chamber cover assembly 232. In another embodiment, a heating element (not shown) can be a component that is embedded or surrounds the chamber lid assembly 232 for heating the chamber lid assembly 232. In an embodiment, the components of the chamber lid assembly 232 can be independently heated or cooled. For example, referring to FIG. 1, the lid assembly 232 includes a cover plate 270 and a cover 272, wherein the cover plate 270 and the cover 272 form an enlarged passage 234. The cover 272 is maintained within a temperature range and the cover 270 is maintained within another temperature range. For example, with a heating belt Winding or heating the cover 272 using other heating means prevents the reaction gas from condensing and the cover plate 270 is maintained at ambient temperature. In another embodiment, the cover 272 can be heated and the cover plate 270 can be cooled by the passage of the water to prevent the reaction gases from thermally decomposing on the cover plate 270.

The lid assembly 232 can comprise components that can be comprised of stainless steel, aluminum, nickel plated aluminum, nickel, or other suitable material that is compatible with the process to be performed. In one embodiment, the cover 272 contains aluminum or stainless steel and the cover 270 contains aluminum. In another embodiment, the additional plate selectively placed between the cover 270 and the cover 272 contains stainless steel.

In an embodiment, the inner face 261 of the enlarged passage 234 (including the inner faces of the cover 270 and the cover 272) and the lower surface 260 of the cover assembly 232 include a polished mirror to assist the gas along the enlarged passage 234 and the chamber cover assembly 232. The lower surface 260 forms a laminar flow. In another embodiment, the inner faces of the gas conduits 250a, 250b can be electropolished to help form a laminar flow of gas.

In yet another embodiment, the inner face 261 of the enlarged channel 234 (including the inner face of the cover 270 and the cover 272) and the lower surface 260 of the lid assembly 232 comprise a roughened surface or a mechanically treated surface to increase the overall surface. Surface area. The rough surface makes it easier for the undesired accumulation material to adhere to the inner surface 261 and the lower surface 260. The vapor deposition process often produces an undesired film layer and may peel off from the inner surface 261 and the lower surface 260 to contaminate the substrate 210. In one embodiment, the lower surface 260 and/or the inner surface 261 have an average roughness (R _a ) of at least about 10 microinches (μin), such as from about 10 μin (about 0.254 micrometers (μm)) to about 200 μin ( About 5.08 μm), preferably about 20 μin (about 0.508 μm) to about 100 μin (about 2.54 μm), more preferably about 30 μin (about 0.762 μm) to about 80 μin (about 2.032 μm).

Referring to FIG. 1, a control unit 280, such as a programmable PC, workstation computer, etc., can be coupled to the processing chamber 200 for controlling process conditions. Control unit 280 is used to control process gases and purge gases from respective gas sources 238, 239, 240 to flow through valves 242a, 242b, for example, at various stages of the substrate processing sequence. For example, the control unit 280 includes a central processing unit (CPU) 282, a support circuit 284, and a memory 286 in which the associated control software 283 is stored.

Control unit 280 can be any type of general purpose computer processor that can be used in industrial settings to control various chambers and sub-processors. The CPU 282 can use any suitable memory 286, such as a random access memory, a read only memory, a floppy disk drive, a hard disk drive, or other near or far end digital storage. Various support circuits can be connected to the CPU 282 to support the processing chamber 200. Control unit 280 can be coupled to another controller adjacent to the individual chamber components, such as programmable logic controllers 248a, 248b of valves 242a, 242b. Bidirectional communication with control unit 280 and other components of processing chamber 200 is operative via a plurality of signal lines (hereinafter collectively referred to as signal bus 288, partially depicted in FIG. 1). In addition to the programmable gas controllers 248a, 248b that control the process gases of the gas sources 238, 239, 240 and the purge gases and valves 242a, 242b, the control unit 280 is also responsible for automatically controlling other wafer processing operations, such as transferring wafers. , control of temperature, evacuation chamber, etc., part of which will be described elsewhere.

Referring to Figures 1-4, in operation, a mechanical device (not shown) transfers substrate 210 to processing chamber 200 via slit valve 208. Lift pin 220 and machinery The device cooperates to place the substrate 210 onto the substrate support 212. The substrate support 212 lifts the substrate 210 against the lower surface 260 of the chamber lid assembly 232. The first airflow is injected into the enlarged passage 234 of the process chamber 200 by the valve 242a together or individually (i.e., pulsed) and the second airflow is injected into the process chamber 200 by the valve 242b. The first gas stream may comprise a continuously supplied purge gas from purge gas source 240 and a pulsed supply of reaction gas from reaction gas source 238, or may include a pulsed supply of reactant gas from reaction gas source 238 and from purge gas source 240. Pulsed supply of purge gas. The second gas stream may comprise a continuously supplied purge gas from purge gas source 240 and a pulsed supply of reaction gas from reaction gas source 239, or may include a pulsed supply of reactant gas from reaction gas source 239 and from purge gas source 240. Pulsed supply of purge gas. The airflow travels through the enlarged passage 234 in a vortex flow 402 pattern to sweep the entire inner surface of the enlarged passage 234. The vortex flow 402 pattern dissipates the flow 404 downward toward the surface of the substrate 210. As the gas flows through the enlarged passage 234, the airflow speed is slowed down. The gas stream then flows through the surface of the substrate 210 and the lower surface 260 of the lid assembly 232. The downwardly sloping lower surface 260 of the chamber lid assembly 232 helps to reduce the difference in speed of airflow across the surface of the substrate 210. The gas stream then flows through the choke valve 262 into the suction zone 266 of the processing chamber 200. Excess gas, by-products, etc. will flow into the suction channel 279 and then exit the processing chamber 200 by the vacuum system 278. In one aspect, the gas stream flows in a laminar flow between the enlarged channel 234 and the surface of the substrate 210 and the lower surface 260 of the chamber lid assembly 232 such that the reactive gas uniformly contacts the surface of the substrate 210 and effectively removes the chamber lid assembly 232. Inside.

The processing chamber 200 of Figures 1-4 has a number of features. In one aspect, The processing chamber 200 provides a reaction zone 264 that is smaller in volume than a conventional CVD chamber. The processing chamber 200 requires less reactive or purge gas to fill the reaction zone 264 for a particular process. In another aspect, the chamber cover assembly 232 provided by the processing chamber 200 has a downwardly sloping or funnel-shaped lower surface 260 that reduces the difference in speed of the gas venting chamber cover assembly 232 from the bottom surface to the substrate 210. In yet another aspect, the enlarged passage 234 provided by the process chamber 200 can slow the flow of airflow. In still another aspect, the gas conduit provided by the processing chamber 200 is at an angle a to the center of the enlarged passage 234. The processing chamber 200 has other features. Other chamber embodiments for atomic layer deposition include one or more of the above features.

For example, FIG. 7 illustrates another embodiment of a processing chamber 800 that includes a gas delivery device 830 that includes a chamber lid assembly 832 that provides a small volume of reaction zone 864 and an enlarged channel 834. Portions of the processing chamber 800 are identical or similar to those of the processing chamber 200 of Fig. 1 above, and are denoted by the same reference numerals. The chamber lid assembly 832 includes a substantially flat lower surface 860. In one embodiment, the distance between the choke valve 262 and the substrate support 212 is from about 0.04 inches to about 2.0 inches, preferably from about 0.04 inches to about 0.2 inches.

In another embodiment, FIG. 8 illustrates another embodiment of a processing chamber 900 including a gas delivery device 930 including a chamber lid assembly 932 that provides a small volume of reaction zone 964 and a downward slope or Funnel-shaped lower surface 960. Portions of the processing chamber 900 are identical or similar to those of the processing chamber 200 of Fig. 1 above, and are denoted by the same reference numerals. Gas source 937 is coupled to channel 933 via one or more valves 941. In a state In the middle, the passage 933 is long to reduce the possibility of the gas introduced through the valve 941 blowing off the reactants adsorbed on the surface of the substrate 210.

The gas delivery devices 230, 830, 930 of Figures 1-8 above include chamber lid assemblies 232, 832, 932 that serve as the upper lid of the chamber body 202. In yet another embodiment, the chamber lid assemblies 232, 832, 932 include any of the covering members disposed above the substrate support 212 to define the reaction zones 264, 864, 964 to reduce the influx during substrate processing. The amount of gas. In other embodiments, the chamber lid assemblies 232, 832, 932 can be used in place of or in combination with the substrate support 212 and move up and down to adjust the volume of the reaction zones 264, 864, 964.

The gas delivery system 230 of FIG. 1 includes two sets of valves 242a/252a, 242b/252b that couple reactive gas sources 238, 239 and purge gas source 240. In other embodiments, gas delivery system 230 includes one or more valves that are coupled to a single or multiple gas sources in different configurations. The process chamber 200 of Figures 1-3 utilizes two sets of valves 242a/252a, 242b/252b to supply the gas flow of the two gas inlets 236a, 236b together or individually. 5 depicts an upper cross-section of another enlarged passageway 634 embodiment of the chamber cover assembly 232 for receiving a single airflow from a gas conduit 650 coupled to a single or plurality of valves through a gas inlet 636. The centerline 602 of the gas conduit 650 is at an angle a to the radial line 604 that passes through the center of the enlarged passage 634. The gas conduit 650, which is disposed at an inclination angle α (where α > 0 ∘), allows the gas to flow in the annular direction indicated by the arrow 610. Figure 6 illustrates an upper cross-section of another enlarged channel 734 embodiment of the chamber cover assembly 232 for receiving three air streams, and the air streams together, partially together (i.e., two together), or individually from the three gas conduits 750a, 750b, The 750c flows through the three gas inlets 736A, 736B, 736C, and the conduits are coupled to a single or a plurality of valves, respectively. The centerline 702 of the gas conduits 750a, 750b, 750c is at an angle a to the radial line 704 passing through the center of the enlarged passage 734. The gas conduits 750a, 750b, 750c disposed at an inclination angle α (where α > 0 ∘) allow the gas to flow in the annular direction indicated by the arrow 710.

Embodiments of the processing chambers 200, 800, 900 of the gas delivery devices 230, 830, 930, and the chamber lid assemblies 1032, 1232, 1632 and the processing chambers 1100, 1500 described in Figures 10A-17D, as described in Figures 1-8 Embodiments of the 1700 embodiment, and the gas delivery assemblies 1800a, 1800c, 1800e, 1800g described in Figures 18A-18H are useful for atomic layer deposition of elements including tantalum, titanium, tungsten, tantalum, niobium, and copper, but not To this extent, or for atomic layer deposition of compounds or alloy/composite layers, including tantalum nitride, tantalum nitride, titanium nitride, tantalum nitride, tungsten nitride, tantalum tungsten nitride, and aluminum copper , but not limited to this. Embodiments of the processing chambers 200, 800, 900 with gas delivery devices 230, 830, 930 as described in Figures 1-8 are also advantageous for chemical vapor deposition of different materials.

For the sake of clarity, the atomic layer deposition process will be described in detail by taking the atomic layer deposition of the tantalum nitride layer in the processing chamber 200 of FIGS. 1-4 as an example. In one aspect, the atomic layer deposition of the tantalum nitride layer includes successive pulses to supply the hafnium precursor and the nitrogen precursor to the processing chamber 200, wherein each pulse is interspersed into the purge gas and/or the evacuation chamber to remove any excess The reactants are such as to prevent the ruthenium precursor from reacting with the nitrogen precursor to produce a gas phase reaction, and to remove any reaction by-products. In each cycle, successively supplying the ruthenium precursor and the nitrogen precursor can alternately adsorb the ruthenium precursor monolayer and the nitrogen precursor monolayer, thereby forming a tantalum nitride monolayer on the substrate structure. The term "substrate structure" as used herein refers to a substrate and a layer of material formed thereon. For example, a dielectric layer.

The adsorption process for adsorbing a single layer of a reactant such as a ruthenium precursor and a nitrogen precursor is self-limiting adsorption. During a specific pulse, the number of sites used to adsorb the reactants on the surface of the substrate structure is limited. The surface of the material structure only adsorbs a single layer. Once the reactants such as the ruthenium precursor or the nitrogen precursor fill the base point, the reactants will not be further adsorbed. The cyclic process can be repeated until the tantalum nitride layer reaches a predetermined thickness.

Gas source 238 via a valve 242a may supply a pulse of the tantalum precursor, for example, five (dimethylamino acyl group) tantalum _{(PDMAT; Ta (NMe 2)} 5). The ruthenium precursor may be accompanied by a supply of a carrier gas, including helium (He), argon (Ar), nitrogen (N ₂ ), hydrogen (H ₂ ), and combinations thereof, but is not limited thereto. Gas source 239 may supply nitrogen precursor pulse through the valve 242a, for example, ammonia (NH _3). The carrier gas also assists in the transport of nitrogen precursors. Gas source 240 may introduce a purge gas, such as argon, via valve 242a and/or via valve 242b. In one aspect, gas source 240 can continuously supply purge gas via valves 242a, 242b as a pulsed supply of purge gas between the ruthenium precursor and the nitrogen precursor and as a pulsed supply of ruthenium precursor and nitrogen precursor during the period Carrier gas. In one aspect, the delivery of the purge gas through the two gas conduits 250a, 250b allows the reaction zone 264 to be sufficiently removed as compared to the delivery of the purge gas only through the gas conduit 250a or 250b. In one aspect, the process of adsorbing the reactants on the surface of the substrate structure is a self-limiting adsorption process, so that the flow uniformity of the reaction gas such as the ruthenium precursor or the nitrogen precursor is not as important as the flow uniformity of the purge gas. The reaction gas can thus be delivered via the gas conduit 250a or 250b. In other embodiments, the purge gas may be pulsed. In other embodiments, the purge gas may comprise two or more streams. In other embodiments, the helium precursor gas may comprise more than one gas stream (ie, two or more gas streams). In other embodiments, the nitrogen precursor gas may comprise more than one gas stream (ie, two or more gas streams).

Other examples of ruthenium precursors include other metal organic precursors or derivatives thereof, such as penta(ethylmethylguanidino) ruthenium (PEMAT; Ta(N(Et)Me) ₅ ), penta(diethylguanamine) Bases 钽 (PDEAT; Ta(NEt ₂ ) ₅ ), and derivatives of PEMAT, PDEAT or PDMAT, but not limited thereto. Examples of other ruthenium precursors include TBTDET (Ta(NEt ₂ ) ₃ NC ₄ H ₉ or C ₁₆ H ₃₉ N ₄ Ta), and ruthenium halide (for example, TaX ₅ , where X is fluorine (F), bromine (Br) Or chlorine (Cl)), and / or its derivatives, but not limited to this. Examples of other nitrogen precursors include nitrogen hydrides (N _x H _y , x, y being integers), such as hydrazine (N ₂ H ₄ ), dimethyl hydrazine ((CH ₃ ) ₂ N ₂ H ₂ ), Tributyl hydrazine (C ₄ H ₉ N ₂ H ₃ ), phenyl hydrazine (C ₆ H ₅ N ₂ H ₃ ), other hydrazine derivatives, nitrogen plasma source (eg N ₂ , N ₂ /H ₂ , NH ₃ or N ₂ H ₄ plasma), 2,2'-azotributane ((CH ₃ ) ₆ C ₂ N ₂ ), ethyl azide (C ₂ H ₅ N ₃ ), and other suitable Gas, but not limited to this. Examples of other purge gas or carrier gas include helium (He), nitrogen (N ₂ ), hydrogen (H ₂ ), other gases, and combinations thereof, but are not limited thereto.

The formation of the tantalum nitride layer can be initiated by adsorbing a single layer of the hafnium precursor onto the substrate followed by a single layer adsorption of the nitrogen precursor. Alternatively, the formation of the tantalum nitride layer may initially be a single layer of nitrogen precursor adsorbed onto the substrate followed by a single layer adsorption of the hafnium precursor. Further, in other embodiments, pumping exhaust gas alone between the pulse supply reaction gases prevents mixing of the reaction gases.

Pulse duration of the ruthenium precursor, pulse duration of the nitrogen precursor The time of introduction of the purge gas between the intervening and intervening pulses of the reactants may vary depending on the volumetric capacity of the deposition chamber used and the vacuum system to which it is coupled. For example, (1) the lower the gas chamber pressure, the longer the pulse time is required; (2) the lower the gas flow rate, the longer the time to increase and stabilize the chamber pressure, the longer the pulse time is required; (3) the chamber volume The larger the time, the longer the filling chamber is, so that the longer the chamber pressure is stabilized, the longer the pulse time is required. Similarly, the interval between pulses can also vary depending on the volumetric capacity of the processing chamber and the vacuum system to which it is coupled. In general, the pulse duration of the ruthenium precursor or nitrogen precursor should be sufficient to allow adsorption of the compound monolayer. In one aspect, the helium precursor pulse is still in the chamber when the pulse is supplied to the nitrogen precursor. In general, the purge gas feed time and/or the pump discharge time should be long enough to avoid mixing the ruthenium precursor with the nitrogen precursor in the reaction zone.

The pulse time of the ruthenium precursor is typically about 1.0 second or less, and the pulse time of the nitrogen precursor is typically about 1.0 second or less, which is generally sufficient for a single layer to be adsorbed onto the substrate structure in turn. The interval between the ruthenium precursor pulse and the nitrogen precursor pulse is about 1.0 second or less, either continuously or pulsed into the purge gas, which is generally sufficient to avoid mixing of the ruthenium precursor with the nitrogen precursor in the reaction zone. Of course, prolonging the pulse time of the reactants ensures that the ruthenium precursor is adsorbed with the nitrogen precursor, and prolonging the interval between pulses of each reactant ensures removal of reaction by-products.

During atomic layer deposition, the substrate 210 can be maintained substantially below the thermal decomposition temperature of the selected ruthenium precursor. The heater temperature for the ruthenium precursor is, for example, between about 20 ° C and about 500 ° C, and the chamber pressure is less than about 100 Torr, preferably less than about 50 Torr. If the helium-containing gas is PDMAT, then The heater temperature is preferably between about 100 ° C and about 300 ° C, more preferably between about 175 ° C and about 250 ° C, and the chamber pressure is between about 1.0 Torr to about 5.0 Torr. It should be understood that other embodiments may employ other ranges of temperature and pressure. For example, a temperature greater than the thermal decomposition temperature can be employed. However, the temperature should preferably be such that the adsorption process has a deposition activity of more than 50%. In another embodiment, the temperature is greater than the thermal decomposition temperature such that the amount of decomposition during deposition of each precursor is limited, so the growth mode will be similar to the growth mode of atomic layer deposition.

An embodiment of a process for atomic layer deposition of tantalum nitride using process chamber 200 of Figures 1-4 includes pulsed supply of penta(dimethylammonium) ruthenium (PDMAT) from gas source 238 via valve 242a at a flow rate of about From 100 sccm to about 1000 sccm, preferably from about 100 sccm to about 400 sccm, and because of the small volume of reaction zone 264, the pulse time is about 0.5 seconds or less, about 0.1 second or less, or about 0.05 second or less. The flow rate of the ammonia gas supplied from the gas source 239 by the valve 242b is from about 100 sccm to about 1000 sccm, preferably from about 200 sccm to about 600 sccm, and since the volume of the reaction zone 264 is small, the pulse time is about 0.5 second or less. About 0.1 second or less, or about 0.05 second or less. The purge argon from gas source 240 may be continuously supplied by valves 242a, 242b at a flow rate of from about 100 sccm to about 1000 sccm, preferably from about 100 sccm to about 400 sccm. Because of the small volume of reaction zone 264, the interval between the ruthenium precursor pulse and the nitrogen precursor pulse is about 0.5 seconds or less, about 0.1 second or less, or about 0.07 seconds or less. The pulse time for the reaction gas and/or purge gas to fill the reaction zone 264 is about 0.016 seconds or more. The heater temperature is preferably maintained from about 100 ° C to about 300 ° C, while the chamber pressure is maintained from about 1.0 Torr to about 5.0 Torr. This process The thickness of the tantalum nitride layer formed per cycle is from about 0.5 angstroms (Å) to about 1.0 angstroms. The above alternating procedure can be repeated until a predetermined thickness is reached.

In one embodiment, the deposited layer, such as a tantalum nitride layer, covers a sidewall having a thickness of about 50 angstroms or less. In another embodiment, the deposited layer covers the sidewalls to a thickness of about 20 angstroms or less. In yet another embodiment, the deposited layer covers the sidewalls to a thickness of about 10 angstroms or less. A tantalum nitride layer having a thickness of about 10 angstroms or less is sufficient as a barrier layer for preventing copper from diffusing. In one aspect, the thin barrier layer facilitates filling sub-micron (eg, less than 0.15 micron) and smaller features with high aspect ratios (eg, greater than 5:1). Of course, the thickness of the deposited sidewalls of the deposited layer can also be greater than 50 angstroms.

Examples of atomic layer deposition have been described above by taking a single layer of reactants adsorbed onto a substrate. The invention also includes embodiments in which more or less than one reactant monolayer is deposited. The invention also includes embodiments in which the reactants are not deposited in a self-limiting manner. The invention also includes embodiments in which the chemical vapor deposition process is primarily performed and the reactants are delivered sequentially or simultaneously.

Confluence/split type upper cover assembly

10A-10F illustrate a chamber lid assembly 1032 for an ALD process in accordance with another embodiment. As shown in FIG. 10A, the chamber cover assembly 1032 includes a cover 1072 disposed in the intermediate portion of the cover 1070. One end of gas conduit 1050a is coupled and in fluid communication with cover 1072, and the other end of gas conduit 1050a extends through cover plate 1070 and is coupled and in fluid communication with the ALD valve and chemical precursor source. In an embodiment, the gas conduit 1050a is directly coupled and in fluid communication with the gas distribution channel 1028. Alternatively, the gas conduit 1050a is for example Indirect coupling via gas conduit 1068a (Fig. 10F) and in fluid communication with gas distribution passage 1028.

The gas conduit sleeve 1052 can comprise at least one gas conduit, or can comprise two, three, or more gas conduits. The gas conduit sleeve 1052 illustrated in Figures 10D-10E includes gas conduits 1050b, 1050c. In one embodiment, one end of gas conduit 1050b is coupled and in fluid communication with cover 1072, and the other end of gas conduit 1050b extends through cover plate 1070 and is coupled and in fluid communication with the ALD valve and chemical precursor source . In another embodiment, the gas conduit 1050b or 1050c is directly coupled and in fluid communication with the gas distribution channel 1028. Alternatively, gas conduit 1050b or 1050c is indirectly coupled and in fluid communication with gas distribution passage 1028, for example, via gas conduit 1068b (Fig. 10F).

In some embodiments, gas conduit 1050c is optional. One end of the gas conduit 1050c is coupled to and in fluid communication with the cover 1072, and the other end of the gas conduit 1050b extends through the cover plate 1070 and is coupled and in fluid communication with the ALD valve and the gas source, such as a carrier gas source, a purge gas Source, plasma gas source, or chemical precursor source. In another embodiment, the gas conduit 1050c is coupled and in fluid communication with the upper surface of the cover 1072. In yet another embodiment, the gas conduit 1050c is coupled to the gas conduit 1050b, for example, through a Y-joint, and is coupled and in fluid communication with the gas conduit 1068b.

The chamber lid assembly 1032 of Figures 10A-10F includes a cover 1072 and a cover 1070, wherein the cover 1072 and the cover 1070 constitute a gas distribution channel 1028. An additional plate (not shown) may be placed between the cover 1070 and the cover 1072. The pin 1076 in the groove 1074 connects the cover 1070 and the cover 1072 (10D) Figure). The additional plate is used to adjust (e.g., enlarge) the spacing between the cover 1072 and the cover 1070, whereby the length of the gas distribution channel 1028 disposed therein can be varied. In another embodiment, the additional plate selectively placed between the cover 1070 and the cover 1072 contains stainless steel. In other embodiments, the gas distribution channel 1028 can be comprised of a single material.

Depending on the gas to be delivered, the chamber lid assembly 1032 can include a cooling element and/or a heating element. Controlling the temperature of the chamber lid assembly 1032 prevents gases from decomposing, depositing, or condensing on the chamber lid assembly 1032. For example, a cooling passage 1090 can be provided in the lid assembly 1032 to cool the chamber lid assembly 1032. In another embodiment, a heating element (not shown) can be a component that is embedded or surrounds the chamber lid assembly 1032 for heating the chamber lid assembly 1032. In an embodiment, the components of the chamber lid assembly 1032 can be separately heated or cooled. For example, referring to FIG. 10A, the lid assembly 1032 includes a cover 1070 and a cover 1072, wherein the cover 1070 and the cover 1072 constitute a gas distribution channel 1028. The cover 1072 is maintained within a temperature range and the cover 1070 is maintained within another temperature range. For example, heating the cover 1072 with a heating tape or using other heating means prevents condensation of the reaction gas and the cover 1070 is maintained at ambient temperature. In another embodiment, the cover 1072 can be heated and the cover 1070 can be cooled by a waterway to prevent thermal decomposition of the reactive gas on the cover 1070.

The lid assembly 1032 can comprise components that can be comprised of stainless steel, aluminum, nickel plated aluminum, nickel, or other suitable material that is compatible with the process to be performed. In an embodiment, the cover 1072 and the cover 1070 are each fabricated, machined, forged, or they may be comprised of a metal, such as aluminum, aluminum alloy, steel, stainless steel, alloys thereof, or combinations thereof.

In an embodiment, the gas distribution channel 1028 and the lower surface 1060 of the chamber lid assembly 1032 include a polished mirror surface to assist in the laminar flow of gas along the gas distribution channel 1028 and the lower surface 1060 of the chamber lid assembly 1032. In another embodiment, the inner faces of the gas conduits 1050a, 1050b, 1050c, 1068a, or 1068b can be electropolished to help form a laminar flow of gas.

In one embodiment, the inner faces 1035a, 1035b, 1035c of the gas distribution channel 1028 and the lower surface 1060 of the chamber lid assembly 1032 include a polished mirror to assist in the laminar flow of gas along the gas distribution channel 1028 and the lower surface 1060 of the chamber lid assembly 1032. . In another embodiment, the inner faces of the gas conduits 1050a, 1050b, 1050c can be electropolished to help form a laminar flow of gas.

In yet another embodiment, the inner faces 1035a, 1035b, 1035c of the gas distribution channel 1028 and the lower surface 1060 of the chamber lid assembly 1032 comprise a roughened surface or a mechanically treated surface to increase the surface area of the entire surface. The roughened surface allows the undesired buildup material to adhere more readily to the inner faces 1035a, 1035b, 1035c and lower face 1060. The vapor deposition process often produces an undesired film layer and may peel off from the inner faces 1035a, 1035b, 1035c and the lower surface 1060 to contaminate the substrate 1010. In one embodiment, the inner faces 1035a, 1035b and/or 1035c, and the lower surface 1060 have an average roughness (R _a ) of at least about 10 μin, such as from about 10 μin (about 0.254 μm) to about 200 μin (about 5.08 μm). Preferably, it is from about 20 μin (about 0.508 μm) to about 100 μin (about 2.54 μm), more preferably from about 30 μin (about 0.762 μm) to about 80 μin (about 2.032 μm).

10D-10F illustrate a cross section of the chamber cover assembly 1032, which includes extension A gas distribution channel 1028 extends through the intermediate portion of the cover plate 1070. The gas distribution channel 1028 extends generally in the direction of the substrate below the chamber lid assembly 1032 during the vertical ALD process. The gas distribution channel 1028 extends through the cover plate 1070 along the central axis 1033 of the cover 1072 to abut the lower surface 1060. The geometry of the gas distribution channel 1028 is similar to an hourglass containing an upper portion of the confluence and a lower portion of the split. The manifold 1034a is a portion of the gas distribution channel 1028 that is located in the upper portion 1037 of the gas distribution channel 1028 and tapers toward the central axis 1033. The splitter passage 1034b is a portion of the gas distribution passage 1028 that is located at a lower portion 1035 of the gas distribution passage 1028 and that tapers away from the central axis 1033. The throttle ring 1036 is a narrow narrow passage that separates the manifold 1034a from the branch passage 1034b. Gas distribution channel 1028 extends further across lower surface 1060 into reaction zone 1064. The gas distribution channel 1028 includes inner faces 1035a-1035c such that the manifold 1034a has an inner face 1035a, the split runner 1034b has an inner face 1035b, and the cover plate 1070 has an inner face 1035c. Lower surface 1060 extends from splitter passage 1034b to choke valve 1062. The lower surface 1060 is configured and sized to substantially cover the substrate under the chamber lid assembly 1032 during the ALD process.

The chamber lid assembly 1032 of Figures 10A-10F can contact the substrate with at least two gas sources or chemical precursors. In other embodiments, the gas delivery system 1130 can be reconfigured to contact the substrate with a single gas source (as shown in Figure 5) or with three or more gas sources or chemical precursors (as shown in Figure 6).

In FIG. 10E, when the process gas in the annular gas stream 1020 passes through the choke 1036, it is forced to expand around the central axis 1033 of the gas distribution channel 1028 compared to a similar configuration but without the throttle 1036. There are still more processing rooms. The annular gas stream 1020 can comprise a flow pattern, such as a vortex pattern , spiral pattern, spiral pattern, curl pattern, twist pattern, winding pattern, swirl pattern, or a derivative thereof. The annular gas stream 1020 extends about at least about 1 turn, preferably at least about 1.5 turns, more preferably at least about 2 turns, more preferably at least about 3 turns, and still more preferably at least about 4, about the central axis 1033 of the gas distribution channel 1028. Circle or above.

Referring to Figures 10A-10F, gas conduits 1050a, 1050b, 1050c, 1068a, 1068b and gas inlets 1038a, 1038b can be placed in any angular relationship with central axis 1033 of gas distribution passage 1028. The gas conduits 1050a, 1050b, 1050c, 1068a or 1068b, or the gas inlets 1038a or 1038b are preferably vertical central axes 1033 (where +β, -β=90∘), or each gas conduit 1050a, 1050b, 1050c, 1068a or The center line of 1068b, or gas inlet 1038a or 1038b, is at an angle +β or -β to the central axis 1033 (wherein 0 ∘ < + β < 90 ∘ or 0 ∘ < - β as shown by the central axis 1133 of Fig. 11C) <90∘). The gas conduits 1050a, 1050b, 1050c, 1068a, 1068b and the gas inlets 1038a, 1038b may be horizontally disposed perpendicular to the central axis 1033, or may be inclined downward by +β angle or upwardly by -β angle to allow gas to flow toward the wall of the gas distribution channel 1028, It does not flow directly down the substrate, which helps to reduce the likelihood of blowing down the reactants adsorbed on the surface of the substrate. Additionally, the diameter of the gas conduits 1050a, 1050b, 1050c, 1068a, 1068b from the transfer line or ALD valve to the gas inlets 1038a, 1038b may be gradually increased to help slow the gas flow rate before the gas enters the gas distribution passage 1028. For example, the inner diameter of the gas conduits 1050a, 1050b, 1050c, 1068a, 1068b may be gradually increased, or it may comprise a plurality of connected conduits of increasing inner diameter.

The gas distribution channel 1028 shown in Figures 10D-10F is on the manifold 1034a The inner diameter is gradually reduced from the upper portion 1037 along the central axis 1033 toward the throttle ring 1036. Again, the inner diameter of the gas distribution passage 1028 at the splitter passage 1034b gradually increases from the throttle ring 1036 along the central axis 1033 to the lower portion 1035 of the lower surface 1060 of the adjacent chamber lid assembly 1032.

In one embodiment, the chamber lid assembly 1032 for processing a substrate having a diameter of 300 mm has the following dimensions. The gas distribution channel 1028 has a diameter in the upper portion 1037 of from about 0.5 inches to about 2 inches, preferably from about 0.75 inches to about 1.5 inches, more preferably from about 0.8 inches to about 1.2 inches, for example about 1 inch. Inches. The gas distribution passage 1028 has a diameter in the throttle ring 1036 of from about 0.1 inches to about 1.5 inches, preferably from about 0.3 inches to about 0.9 inches, more preferably from about 0.5 inches to about 0.8 inches, for example, about 0.66 inches. The gas distribution channel 1028 has a diameter in the lower portion 1035 of from about 0.5 inches to about 2 inches, preferably from about 0.75 inches to about 1.5 inches, more preferably from about 0.8 inches to about 1.2 inches, such as about 1 inch. Inches.

The above dimensions are generally applicable to gas distribution channels 1028 that supply a total gas flow of from about 500 sccm to about 3000 sccm. In other particular embodiments, the size can be varied for a particular gas flow to flow through. In general, the greater the gas flow rate, the larger the diameter size required for the gas distribution channel 1028.

Without limitation, the diameter of the salt gas distribution channel 1028 is reduced from the upper portion 1037 of the gas distribution channel 1028 to the throttle ring 1036 and increases from the throttle ring 1036 to the lower portion 1035 of the gas distribution channel 1028 to allow passage through the gas distribution channel. The gas of 1028 produces less adiabatic expansion which helps control the temperature of the process gas within the annular gas stream 1020. For example, a gas entering the gas distribution channel 1028 via the gas inlets 1038a, 1038b suddenly produces adiabatic expansion. The temperature of the gas is lowered, causing the gas to condense to form droplets. On the other hand, the gas distribution channel 1028, which is tapered, allows the gas to generate less adiabatic expansion. Therefore, there is more heat exchange with the gas, so it is easier to control the gas temperature by controlling the ambient temperature of the gas (i.e., controlling the temperature of the chamber lid assembly 1032). The gas distribution channel 1028 can be tapered and can include one or more tapered inner faces, such as tapered flats, concave faces, convex faces, or combinations thereof, or can include one or more tapered inner faces. (ie a part is tapered and a part is not tapered).

In one embodiment, as shown in FIG. 10F, gas inlets 1038a, 1038b are adjacent to upper portion 1037 of gas distribution channel 1028. In other embodiments, one or more gas inlets 1038a, 1038b are disposed between the upper portion 1037 and the lower portion 1035 along the entire length of the gas distribution passage 1028.

The centerlines of the gas conduits 1050a, 1050b, 1050c, 1068a, or 1068b are respectively at an angle a to the radial line of the gas distribution channel 1028, similar to FIG. 11C, wherein the centerlines 1176a, 1176b of the gas conduits 1150a, 1150b are respectively An angle α is sandwiched by the radial line at the center of the gas distribution channel 1028. The inlets of the gas inlet gas conduits 1050a, 1050b, 1050c, 1068a, 1068b are preferably disposed at an inclination angle α (where α > 0 ∘) such that the gas flows in the annular direction as indicated by the annular gas flow 1020 (Fig. 10E). Supplying the gas at the angle of inclination α without direct flow to the wall of the enlarged passage (i.e., a = 0 ∘) helps to form a laminar flow rather than turbulent flow through the gas distribution passage 1028. The laminar flow through the gas distribution channel 1028 facilitates removal of the inner face of the gas distribution channel 1028 and other surfaces of the chamber lid assembly 1032. In contrast, turbulence does not flow uniformly through the inner and other surfaces of the gas distribution channel 1028 and may contain dead airflow that cannot be reached. angle. In one aspect, gas conduits 1050a, 1050b, 1050c, 1068a, 1068b and corresponding gas inlets 1038a, 1038b are spaced apart from each other and direct the gas flow in the same annular direction (ie, clockwise or counterclockwise).

Unexpectedly limited by theory, the 10E-10F is a cross-sectional view of the gas distribution channel 1028 of the chamber lid assembly 1032, which illustrates the flow of gas therethrough. Although the flow pattern through the gas distribution channel 1028 cannot be known exactly, the salty annular gas flow 1020 (Fig. 10E) can be vortex flow, spiral flow, spiral flow, swirl flow, fast swirl flow, twist flow, winding flow, tortuous flow. The gas distribution channel 1028 flows through the crimped flow, the vortex flow, or its derived flow. The annular flow is formed in the "processing zone" rather than the space separating the substrates. In one aspect, the annular flow 1020 facilitates more efficient evacuation of the air distribution channel 1028 as the vortex flow pattern sweeps the entire inner surface of the gas distribution channel 1028.

Referring to Figure 10D, at least a portion of the lower surface 1060 of the chamber lid assembly 1032 tapers from the gas distribution channel 1028 toward the periphery of the chamber lid assembly 1032 to provide gas flow from the gas distribution channel 1028 through the substrate surface (i.e., from the center of the substrate to Preferred velocity waveform for the edge of the substrate. The lower surface 1060 can include one or more tapered faces, such as a flat surface, a concave surface, a convex surface, or a combination thereof. In one embodiment, the lower surface 1060 is a tapered funnel shape.

In one embodiment, the lower surface 1060 is sloped downward to reduce the difference in speed of the process gas passing through the lower surface 1060 of the chamber lid assembly 1032 to the substrate, thereby uniformly contacting the surface of the substrate with the reactive gas. In one embodiment, the flow cross section between the downwardly inclined lower surface 1060 of the chamber lid assembly 1032 and the surface of the substrate has a ratio of the largest area to the smallest area of less than 2, preferably less than 1.5, more Good is less than 1.3, and then better.

Unexpectedly limited by theory, the salty airflow over the surface of the substrate at a more uniform rate allows the gas to deposit more evenly on the substrate. The salt flow rate is proportional to the gas concentration and is therefore proportional to the rate at which the gas is deposited on the surface of the substrate. Therefore, the surface area of the first substrate having a faster gas flow rate has a faster gas deposition rate with respect to the surface area of the second substrate. The chamber cover assembly 1032 with the downwardly inclined lower surface 1060 allows for more uniform deposition of gas throughout the surface of the substrate, since the lower surface 1060 produces a more uniform velocity, so that the concentration of gas over the surface of the substrate is more uniform. .

Referring to Figures 10C-10E, a choke 1062 is disposed around the chamber cover assembly 1032 adjacent the edge of the substrate placed during the ALD process. When the chamber cover assembly 1032 is assembled to form a treatment zone around the substrate, the choke valve 1062 includes any member that restricts gas flow through the vicinity of the edge of the substrate.

As shown in Figures 10A-10D, the cover sleeve 1080 having the handle 1082 can cover the cover 1072, the gas conduit 1050a, the gas conduit sleeve 1052, and a portion of the upper surface of the cover 1070. The temperature of the chamber lid assembly 1032 can be controlled by a liquid cooling system that connects the water jacket, such as the cooling passage 1090 that extends through the cover plate 1070. A cooling fluid such as water flows through the cooling passages 1090 to remove heat from the cover plate 1070. The coolant links 1092a, 1092b are connected to the cooling passage 1090 by hoses or tubes. The other ends of the coolant links 1092a, 1092b are connected by a hose or tube to a fluid source and a fluid recovery device, such as an internal cooling system or a separate cooling system. The coolant links 1092a, 1092b are connected to the cover 1070 by a support frame 1094. The liquid flowing through the cooling passage 1090 may include water, oil, ethanol, ethylene glycol, glycol ether, Or other organic solvents. In one embodiment, the temperature of the cover 1070 or chamber cover assembly 1032 can be maintained between about 0 ° C and about 100 ° C, preferably between about 18 ° C and about 65 ° C, more preferably between about 20 ° C and about Between 50 ° C.

11A-11C illustrate a cross section of one embodiment of a processing chamber 1100 that includes a gas delivery system 1130 suitable for use in an ALD process. The processing chamber 1100 includes a chamber body 1102 having a sidewall 1104 and a bottom 1106. The slit valve 1108 of the processing chamber 1100 can be accessed by a mechanical device (not shown) into and out of the processing chamber 1100 to transfer and retrieve the substrate 1110, such as a 200 mm or 300 mm semiconductor wafer or glass substrate.

The substrate support 1112 supports the substrate 1110 on the substrate receiving surface 1111 in the processing chamber 1100. The substrate support 1112 is provided with a lift motor 1114 for raising and lowering the substrate support 1112 and the substrate 1110 placed thereon. A lift plate 1116 that connects the lift motor 1118 is disposed within the process chamber 1100 for raising and lowering the lift pins 1120 that are movable through the substrate support 1112. The substrate support 1112 can include a vacuum holder (not shown), an electrostatic chuck (not shown), or a clamp ring (not shown) to fix the substrate 1110 on the substrate support 1112 during the deposition process. .

The temperature of the substrate 1110 placed thereon can be controlled by adjusting the temperature of the substrate support 1112. For example, the substrate support 1112 may be heated using an embedded heating element such as a resistive heater (not shown), or may be performed using radiant heat such as a heat lamp (not shown) disposed above the substrate support 1112. heating. A purge ring 1122 can be placed over the substrate support 1112 to define a purge channel 1124 to provide a purge gas around the substrate 1110 to prevent deposits from depositing thereon.

A gas delivery system 1130 is provided in the upper portion of the chamber body 1102 for supplying processing chamber 1100 gas, such as process gases and/or purge gases. The gas delivery system 1130 of Figures 11A-11C can contact the substrate 1110 with at least two gas sources or chemical precursors. In other embodiments, the gas delivery system 1130 can be reconfigured to contact the substrate 1110 with a single gas source (as shown in Figure 5), or with three or more gas sources or chemical precursors (as shown in Figure 6). . Vacuum system 1178 connects suction channel 1179 to discharge any predetermined gas out of process chamber 1100 and assists suction zone 1166 of process chamber 1100 to maintain a predetermined pressure or maintain a predetermined pressure range.

In an embodiment, the gas delivery system 1130 includes a chamber lid assembly 1132 having a gas distribution channel 1128 that extends through an intermediate portion of the chamber lid assembly 1132. The gas distribution channel 1128 extends in a direction perpendicular to the substrate receiving surface 1111 and extends through the cover plate 1170 along the central axis 1133 of the gas distribution channel 1128 to the lower surface 1160. The manifold 1134a is a portion of the gas distribution channel 1128 that is located in the upper portion 1137 of the gas distribution channel 1128 and tapers toward the central axis 1133. The splitter passage 1134b is a portion of the gas distribution passage 1128 that is located at a lower portion 1135 of the gas distribution passage 1128 and that tapers away from the central axis 1133. The throttle ring 1131 is a narrow narrow passage that separates the bus passage 1134a from the branch passage 1134b. Gas distribution channel 1128 extends further across lower surface 1160 into reaction zone 1164. Lower surface 1160 extends from splitter 1134b to choke 1162. The lower surface 1160 is configured and sized to substantially cover the substrate 1110 on the substrate receiving surface 1111 of the substrate support 1112.

When the process gas in the annular gas flow 1174 passes through the throttle 1131, It is forced to expand around the central axis 1133 of the gas distribution channel 1128 more than the processing chamber of similar construction but without the throttle 1131. The annular airflow 1174 can include a flow pattern, such as a vortex pattern, a spiral pattern, a spiral pattern, a curl pattern, a twist pattern, a wound pattern, a swirl pattern, or a derivative thereof. The annular gas stream 1174 extends about at least about 1 turn, preferably at least about 1.5 turns, more preferably at least about 2 turns, more preferably at least about 3 turns, and still more preferably at least about 4, about the central axis 1133 of the gas distribution channel 1128. Circle or above.

Gas distribution channel 1128 has gas inlets 1136a, 1136b for providing gas flow from two sets of similar valves 1142a/1152a, 1142b/1152b, which may be provided together or individually. In one configuration, valve 1142a and valve 1142b are coupled to different sources of reactive gas, but are preferably coupled to the same source of purge gas. For example, the valve 1142a is coupled to the reactive gas source 1138, the valve 1142b is coupled to the reactive gas source 1139, and the two valves 1142a, 1142b are coupled to the purge gas source 1140. Valves 1142a, 1142b each include a transfer line 1143a, 1143b having a valve seat assembly 1144a, 1144b, each of which includes an evacuation line 1145a, 1145b having a valve seat assembly 1146a, 1146b. The transfer lines 1143a, 1143b connect the reactive gas sources 1138, 1139 and connect the gas inlets 1136a, 1136b of the gas distribution channel 1128. The valve seat assemblies 1144a, 1144b of the transfer lines 1143a, 1143b control the flow of reactant gases from the reactive gas sources 1138, 1139 to the gas distribution channel 1128. The evacuation lines 1145a, 1145b connect the purge gas source 1140 and intersect the transfer lines 1143a, 1143b downstream of the valve seat assemblies 1144a, 1144b of the transfer lines 1143a, 1143b. The valve seat assemblies 1146a, 1146b of the evacuation lines 1145a, 1145b control the flow of purge gas from the purge gas source 1140 to the gas distribution channel 1128. If the carrier gas is used to transport the reaction gases of the reaction gas sources 1138, 1139, the carrier gas is preferably the same as the purge gas (for example, argon gas is used as the carrier gas and the purge gas).

The valve seat assemblies 1144a, 1144b, 1146a, 1146b can each include a baffle (not shown) and a valve seat (not shown). Applying a bias or starting it can open or close the partition. The partition can be pneumatic or electric. Pneumatic valves include pneumatic valves available from Fujikin and Veriflow. The electric valve includes an electric valve available from Fujikin Corporation. For example, the ALD valve may be a Fujikin model FPR-UDDFAT-21-6.35-PI-ASN or a Fujikin model FPR-NHDT-21-6.35-PA-AYT. The programmable logic controllers 1148a, 1148b are coupled to valves 1142a, 1142b for controlling the diaphragms of the valve seat assemblies 1144a, 1144b, 1146a, 1146b of the actuating valves 1142a, 1142b. The gas pulse period generated by the pneumatic valve can be 0.020 seconds. The electric valve produces a gas pulse period of 0.005 seconds. Motorized valves typically require a contact valve and a programmable logic controller drive.

Valves 1142a, 1142b, respectively, can be zero dead volume valves that flush the reaction gases of transfer lines 1143a, 1143b when valve seat assemblies 1144a, 1144b are closed. For example, evacuation lines 1145a, 1145b may be provided with valve seat assemblies 1144a, 1144b that abut delivery lines 1143a, 1143b. When the valve seat assemblies 1144a, 1144b are closed, the vent lines 1145a, 1145b can supply purge gas to flush the transfer lines 1143a, 1143b. In one embodiment, the evacuation lines 1145a, 1145b are slightly spaced from the valve seat assemblies 1144a, 1144b of the transfer lines 1143a, 1143b such that the purge gas does not feed directly into the valve seat assembly 1144a when the valve seat assemblies 1144a, 1144b are opened, 1144b. The zero invalid volume valve here means that the valve has a negligible invalid volume (ie, the invalid volume is not necessarily zero).

Each set of valves 1142a/1152a, 1142b/1152b can be used to provide a combined gas flow and/or individual gas flow of the reactive gas with the purge gas. Referring to the valve 1142a/1152a, an example of a combined gas flow of the reaction gas and the purge gas includes a purge gas of the purge gas source 1140 continuously flowing through the evacuation line 1145a and the reaction gas source 1138 to flow through the transfer line 1143a. The purge gas can be continuously supplied by opening the separator of the valve seat assembly 1146a of the evacuation line 1145a. The reactant gas of the reactive gas source 1138 can be pulsed by opening and closing the separator of the valve seat assembly 1144a of the transfer line 1143a. Referring to valve 1142a/1152a, examples of individual gas streams of reactive gas and purge gas include a purge gas pulse flowing through purge line 1145a and from purge gas source 1140 and a reaction gas pulse from feed gas source 1138 flowing through transfer line 1143a. The purge gas can be pulsed by opening and closing the separator of the valve seat assembly 1146a of the evacuation line 1145a. The reactant gas of the reactive gas source 1138 can be pulsed by opening and closing the separator of the valve seat assembly 1144a of the transfer line 1143a.

Delivery lines 1143a, 1143b of valves 1142a, 1142b may be coupled to gas inlets 1136a, 1136b via gas conduits 1150a, 1150b. Gas conduits 1150a, 1150b can be integral or separate components of valves 1142a, 1142b. In one aspect, valves 1142a, 1142b are in close proximity to gas distribution passage 1128, which reduces the unnecessary configuration volume of delivery lines 1143a, 1143b and gas conduits 1150a, 1150b between valves 1142a, 1142b and gas inlets 1136a, 1136b.

Referring to Fig. 11C, the gas conduits 1150a, 1150b and the gas inlets 1136a, 1136b can be placed in any angular relationship with the central axis 1133 of the gas distribution channel 1128. The gas conduits 1150a, 1150b and the gas inlets 1136a, 1136b are preferably vertical central axes 1133 (where +β, -β = 90 ∘), or the centerlines 1176a, 1176b of the gas conduits 1150a, 1150b are angled with the central axis 1133 +β or -β (where 0 ∘ < + β < 90 ∘ or 0 ∘ < - β < 90 ∘). The gas conduits 1150a, 1150b may be horizontally disposed perpendicular to the central axis 1133, or may be tilted downward by a +β angle or upwardly by an angle -β to allow gas to flow toward the wall of the gas distribution channel 1128 rather than directly down to the substrate 1110, which may aid The possibility of reducing the reactants adsorbed on the surface of the substrate 1110 is reduced. Additionally, the diameter of the gas conduits 1150a, 1150b from the transfer lines 1143a, 1143b of the valves 1142a, 1142b to the gas inlets 1136a, 1136b may be gradually increased to help slow down the gas flow rate before the gas enters the gas distribution passage 1128. For example, the inner diameter of the gas conduits 1150a, 1150b may be gradually increased, or it may comprise a plurality of connected conduits having an increasing inner diameter.

The gas distribution channel 1128 shown in FIG. 11C is gradually reduced in the inner diameter of the manifold 1134a from the upper portion 1137 along the central axis 1133 to the throttle ring 1131. Further, the inner diameter of the gas distribution passage 1128 at the branch passage 1134b gradually increases from the throttle ring 1131 along the central axis 1133 toward the lower portion 1135 of the lower surface 1160 of the adjacent chamber lid assembly 1132. In one embodiment, the processing chamber 1100 for processing a substrate having a diameter of 300 mm has the following dimensions. The gas distribution channel 1128 has a diameter in the upper portion 1137 of from about 0.5 inches to about 2 inches, preferably from about 0.75 inches to about 1.5 inches, more preferably from about 0.8 inches to about 1.2 inches, for example about 1 inch. Inches. The gas distribution channel 1128 has a diameter of about 0.1 at the throttle ring 1131. The inch is about 1.5 inches, preferably about 0.3 inches to about 0.9 inches, more preferably about 0.5 inches to about 0.8 inches, for example about 0.66 inches. The gas distribution channel 1128 has a diameter in the lower portion 1135 of from about 0.5 inches to about 2 inches, preferably from about 0.75 inches to about 1.5 inches, more preferably from about 0.8 inches to about 1.2 inches, such as about 1 inch. Inches.

The above dimensions are generally applicable to gas distribution channels 1128 that supply a gas flow rate of from about 500 sccm to about 3000 sccm. In other particular embodiments, the size can be varied for a particular gas flow to flow through. In general, the greater the gas flow rate, the larger the diameter size required for the gas distribution passage 1128.

Unexpectedly limited by theory, the diameter of the salt gas distribution channel 1128 is reduced from the upper portion 1137 of the gas distribution channel 1128 to the throttle ring 1131 and increases from the throttle ring 1131 to the lower portion 1135 of the gas distribution channel 1128 to allow passage through the gas distribution channel. The gas of 1128 produces less adiabatic expansion which helps control the temperature of the process gas within the annular gas stream 1174. For example, a sudden adiabatic expansion of the gas entering the gas distribution channel 1128 via the gas inlets 1136a, 1136b will cause the gas temperature to drop, causing the gas to condense to form droplets. On the other hand, the gas distribution channel 1128, which is tapered, allows the gas to produce less adiabatic expansion. Therefore, there is more heat exchange with the gas, so it is easier to control the gas temperature by controlling the ambient temperature of the gas (i.e., controlling the temperature of the chamber lid assembly 1132). The gas distribution channel 1128 can be tapered and can include one or more tapered inner faces, such as tapered faces, concave faces, convex faces, or combinations thereof, or segments that can include one or more tapered inner faces (ie a part is tapered and a part is not tapered).

In an embodiment, the gas inlets 1136a, 1136b are adjacent to the gas distribution The upper portion 1137 of the track 1128. In other embodiments, one or more gas inlets 1136a, 1136b are disposed between upper portion 1137 and lower portion 1135 along the entire length of gas distribution passage 1128.

The centerlines of the gas conduits 1150a, 1150b are respectively at an angle a to the radial diameter of the gas distribution channel 1128, similar to Figure 11C, wherein the centerlines 1176a, 1176b of the gas conduits 1150a, 1150b are respectively centered through the center of the gas distribution channel 1128. The radial line clamps an angle α. The inlet of the gas inlet gas conduits 1150a, 1150b is preferably disposed at an inclination angle α (where α > 0 ∘) such that the gas flows in a circular direction as indicated by the annular gas flow 1174 (Fig. 11B-11C). Supplying the gas at the angle of inclination α without direct flow to the wall of the enlarged passage (i.e., a = 0 ∘) helps to form a laminar flow rather than turbulent flow through the gas distribution passage 1128. The laminar flow through the gas distribution channel 1128 facilitates removal of the inner face of the gas distribution channel 1128 and other surfaces of the chamber lid assembly 1132. In contrast, turbulence does not flow uniformly through the inner and other surfaces of the gas distribution channel 1128 and may contain dead spots where the gas flow cannot reach. In one aspect, the gas conduits 1150a, 1150b and corresponding gas inlets 1136a, 1136b are spaced apart from one another and direct the gas flow in the same annular direction (ie, clockwise or counterclockwise).

Unexpectedly limited by theory, Figure 11C is a cross-sectional view of the gas distribution channel 1128 of the chamber lid assembly 1132, which illustrates the flow of gas therethrough. Although the flow pattern through the gas distribution channel 1128 cannot be known exactly, the ring-shaped annular gas flow 1174 (Fig. 11B-11C) can be vortex flow, spiral flow, spiral flow, swirl flow, fast swirl flow, twist flow, winding flow, The tortuous flow, the crimped flow, the swirling flow, or its derivative flow, flows through the gas distribution channel 1128. As shown in Fig. 11C, the annular flow is formed in the "processing zone", and The space that does not separate the substrate 1110. In one aspect, the annular flow 1174 facilitates more efficient evacuation of the air distribution channel 1128 as the vortex flow pattern sweeps the entire inner surface of the gas distribution channel 1128.

In one embodiment, the distance 1175 between the gas inlets 1136a, 1136b and the substrate 1110 in Figure 11C is sufficient to allow the annular gas stream 1174 to dissipate downwardly when it is not expected to flow over the surface of the substrate 1110. The salty annular airflow 1174 travels in a laminar flow such that the surface of the chamber lid assembly 1132 and substrate 1110 are effectively removed. In a particular embodiment, the distance 1175 between the upper portion 1137 of the gas distribution channel 1128 and the substrate 1110 is from about 3 inches to about 8 inches, preferably from about 3.5 inches to about 7 inches, more preferably about 4 inches to about 6 inches, for example 5 inches.

The distance 1177a is the length of the confluence channel 1134a in the cover 1172 between the upper portion 1137 of the gas distribution channel 1128 and the throttle ring 1131 along the central axis 1133, and the distance 1177b is the distribution channel 1134b in the cover 1172 in the throttle 1131 and the cover. The length of the lower surface 1173 of the cover 1172 is along the central axis 1133. In one embodiment, the distance 1177a is from about 1 inch to about 4 inches, preferably from about 1.25 inches to about 3 inches, more preferably from about 1.5 inches to about 2.5 inches, such as 2 inches; The distance from 1177b is from about 0.5 inches to about 4 inches, preferably from about 1 inch to about 3 inches, more preferably from about 1.25 inches to about 1.75 inches, such as 1.5 inches.

Referring to Figure 11A, at least a portion of the lower surface 1160 of the chamber lid assembly 1132 tapers from the gas distribution channel 1128 toward the periphery of the chamber lid assembly 1132 to provide gas flow from the gas distribution channel 1128 through the surface of the substrate 1110 (i.e., from the center of the substrate). A preferred velocity waveform to the edge of the substrate. Lower surface 1160 can be packaged Containing one or more tapered faces, such as planes, concave faces, convex faces, or combinations thereof. In one embodiment, the lower surface 1160 is a tapered funnel shape.

In one embodiment, the lower surface 1160 is sloped downward to reduce the difference in speed of the gas flow through the lower surface 1160 of the chamber lid assembly 1132 to the substrate 1110, thereby uniformly contacting the surface of the substrate 1110 with the reactive gas. In one embodiment, the flow cross section between the downwardly inclined lower surface 1160 of the chamber lid assembly 1132 and the surface of the substrate 1110 has a ratio of the largest area to the smallest area of less than 2, preferably less than 1.5, more preferably less than 1.3. Good again is 1.

Without wishing to be bound by theory, the salty gas stream will more uniformly deposit on the substrate 1110 across the surface of the substrate 1110 at a more uniform rate. The salt flow rate is proportional to the gas concentration and is therefore proportional to the rate at which the gas is deposited on the surface of the substrate 1110. Therefore, the first surface region of the substrate 1110 having a faster gas flow rate has a faster gas deposition rate than the second surface region. The chamber cover assembly 1132 having a downwardly inclined lower surface 1160 allows gas to be more uniformly deposited over the entire surface of the substrate 1110 because the lower surface 1160 produces a more uniform velocity, so that the concentration of gas over the surface of the substrate 1110 More even.

Referring to Fig. 11A, a choke 1162 is provided around the chamber cover assembly 1132 adjacent the edge of the substrate 1110. When the chamber cover assembly 1132 is assembled to form a treatment zone around the substrate 1110, the choke 1162 includes any member that restricts gas flow through the region near the edge of the substrate 1110.

In a particular embodiment, the distance between the choke 1162 and the substrate support 1112 is from about 0.04 inches to about 2.0 inches, preferably from about 0.04 inches to about 0.2 inches. The spacing can vary depending on the delivery gas and deposition process conditions. Profit Separating the pressure zone from the reaction zone 1164 and the suction zone 1166 (Fig. 11A) with the choke 1162 allows the volume distribution between the chamber lid assembly 1132 and the substrate 1110 or the pressure distribution within the reaction zone 1164 to be more uniform.

Referring to Fig. 11A, in one aspect, since the reaction zone 1164 and the suction zone 1166 have been separated, the reaction gas or purge gas only needs to be appropriately filled into the reaction zone 1164 to allow the substrate 1110 to sufficiently contact the reaction gas or purge gas. In the conventional chemical vapor deposition, the conventional chamber needs to simultaneously and uniformly supply the combined gas flow of the reaction gas to the entire substrate surface to ensure that the reaction gases uniformly react with each other across the surface of the substrate 1110. In the atomic layer deposition, the processing chamber 1100 successively introduces a reaction gas to the surface of the substrate 1110, so that a thin layer of the reactant is alternately adsorbed on the surface of the substrate 1110. Therefore, the atomic layer deposition does not require a reaction gas to reach the surface of the substrate 1110 at the same time. Instead, a sufficient amount of reactive gas is required to cause a thin layer of reactant to adsorb to the surface of the substrate 1110.

Since the volume of the reaction zone 1164 is smaller than the internal volume of a conventional CVD chamber, less gas is required to fill the reaction zone 1164 for the particular process of the atomic layer deposition process. For example, in the case of a chamber embodiment for treating a substrate having a diameter of 200 mm, the volume of the reaction zone 1164 is about 1000 cm ³ or less, preferably about 500 cm ³ or less, more preferably about 200 cm ³ or less. For example, a chamber embodiment for treating a substrate having a diameter of 300 mm, the volume of the reaction zone 1164 is about 3000 cm ³ or less, preferably about 1500 cm ³ or less, more preferably about 600 cm ³ or less. In an embodiment, the substrate support 1112 can be raised or lowered to adjust the volume of the reaction zone 1164 for deposition. The smaller the volume of the reaction zone 1164, the less the amount of deposition gas or purge gas that needs to flow into the processing chamber 1100. Due to the reduced use of gas, it can increase the capacity of the processing room 1100 and reduce waste, thereby reducing operating costs.

As shown in FIGS. 11A-11C, the lid assembly 1132 includes a cover 1172 and a cover 1170, wherein the cover 1172 and the cover 1170 constitute a gas distribution channel 1128. An additional plate may be placed between the cover 1170 and the cover 1172. In other embodiments, the gas distribution channel 1128 can be comprised of a single material.

Depending on the gas to be delivered, the chamber lid assembly 1132 can include a cooling element and/or a heating element. Controlling the temperature of the chamber lid assembly 1132 prevents gases from decomposing, depositing, or condensing on the chamber lid assembly 1132. For example, a water channel (such as cooling channel 1090 of FIG. 10A) may be provided in chamber lid assembly 1132 to cool chamber lid assembly 1132. In another embodiment, a heating element (not shown) can be a component that is embedded or surrounds the chamber lid assembly 1132 for heating the chamber lid assembly 1132. In an embodiment, the parts of the chamber lid assembly 1132 can be heated or cooled separately. For example, referring to FIG. 11A, the lid assembly 1132 includes a cover plate 1170 and a cover 1172, wherein the cover plate 1170 and the cover 1172 constitute a gas distribution channel 1128. The cover 1172 is maintained within a temperature range and the cover 1170 is maintained within another temperature range. For example, heating the cover 1172 with a heating tape or using other heating means prevents the reaction gas from condensing, and the cover plate 1170 is maintained at ambient temperature. In another embodiment, the cover 1172 can be heated and the cover 1170 can be cooled using a waterway to prevent thermal decomposition of the reactive gases on the cover 1170.

The lid assembly 1132 can comprise components that can be comprised of stainless steel, aluminum, nickel plated aluminum, nickel, alloys thereof, or other suitable materials. In an embodiment, the cover 1172 and the cover 1170 are each fabricated, machined, forged, or they may be composed of metal, such as aluminum, aluminum alloy, steel, stainless steel, Gold, or a combination thereof.

In one embodiment, the inner face of the gas distribution channel 1128 (including the inner surface of the cover plate 1170 and the cover 1172) and the lower surface 1160 of the chamber cover assembly 1132 include a polished mirror to assist gas along the gas distribution channel 1128 and the chamber cover assembly. The lower surface 1160 of 1132 forms a laminar flow. In another embodiment, the inner faces of the gas conduits 1150a, 1150b can be electropolished to help form a laminar flow of gas.

In yet another embodiment, the inner face of the gas distribution channel 1128 (including the inner surface of the cover plate 1170 and the cover 1172) and the lower surface 1160 of the chamber cover assembly 1132 comprise a roughened surface or a mechanically treated surface to increase the overall surface. Surface area. The roughened surface allows the undesirable buildup material to adhere more readily to the inner and lower surfaces 1160 of the cover 1170 and cover 1172. The vapor deposition process often produces an undesired film layer and may smear from the lower surface 1160 and the inner surface of the gas distribution channel 1128 to contaminate the substrate 1110. In one embodiment, the average roughness (R _a ) of the inner surface of the lower surface 1160 and/or the gas distribution channel 1128 is at least about 10 μin, such as from about 10 μin (about 0.254 μm) to about 200 μin (about 5.08 μm). Preferably, it is from about 20 μin (about 0.508 μm) to about 100 μin (about 2.54 μm), more preferably from about 30 μin (about 0.762 μm) to about 80 μin (about 2.032 μm).

The control unit 1180, such as a programmable PC or a workstation computer, is coupled to the processing chamber 1100 for controlling process conditions. For example, in various stages of the substrate processing procedure, control unit 1180 is used to control process gases and purge gases from respective gas sources 1138, 1139, 1140 to flow through valves 1142a, 1142b. For example, the control unit 1180 includes The central processing unit (CPU) 1182, the support circuit 1184, and the memory 1186 in which the associated control software 1183 is stored.

Control unit 1180 can be any type of general purpose computer processor that can be used in industrial settings to control various chambers and sub-processors. The CPU 1182 can use any suitable memory 1186, such as a random access memory, a read only memory, a floppy disk drive, a hard disk drive, or other near or far end digital storage. Various support circuits can be connected to the CPU 1182 to support the processing chamber 1100. Control unit 1180 can be coupled to another controller adjacent to the individual chamber components, such as programmable logic controllers 1148a, 1148b of valves 1142a, 1142b. Bidirectional communication with control unit 1180 and other components of processing chamber 1100 is operative via a plurality of signal lines (hereinafter collectively referred to as signal bus 1188, partially depicted in FIG. 11A). In addition to the programmable gas controllers 1148a, 1148b that control the process gases and purge gases of the gas sources 1138, 1139, 1140 and the valves 1142a, 1142b, the control unit 1180 is also responsible for automatically controlling other wafer processing operations, such as transferring wafers. , control of temperature, evacuation chamber, etc., part of which will be described elsewhere.

Referring to Figures 11A-11C, in operation, a mechanical device (not shown) transfers substrate 1110 to processing chamber 1100 via slit valve 1108. The lift pins 1120 cooperate with the mechanical device to place the substrate 1110 onto the substrate support 1112. The substrate support 1112 lifts the substrate 1110 against the lower surface 1160 of the chamber lid assembly 1132. Together or individually (i.e., pulsed), a first gas stream is injected into the gas distribution channel 1128 of the processing chamber 1100 using a valve 1142a and a second gas stream is injected into the processing chamber 1100 using a valve 1142b. The first gas stream may comprise a continuous supply of purge gas from the purge gas source 1140 and from a source of reaction gas 1138 The pulsed supply of reactant gas, or may include a pulsed supply of reactant gas from source 1138 of the reaction gas and a purge gas supplied from a pulse of purge gas source 1140. The second gas stream may comprise a continuously supplied purge gas from the purge gas source 1140 and a pulsed supply of reaction gas from the reaction gas source 1139, or may include a pulsed supply of reactant gases from the reactant gas source 1139 and from the purge gas source 1140. Pulsed supply of purge gas. The annular flow 1174 flows through the gas distribution passage 1128 in a vortex flow manner to sweep the entire inner surface of the gas distribution passage 1128. The annular gas stream 1174 dissipates downward toward the surface of the substrate 1110. As the gas flows through the gas distribution channel 1128, the gas flow rate will slow down. The gas stream then flows through the surface of the substrate 1110 and the lower surface 1160 of the lid assembly 1132. The downwardly sloping lower surface 1160 of the chamber lid assembly 1132 helps to reduce the difference in speed of airflow across the surface of the substrate 1110. The gas stream then flows through the choke valve 1162 into the suction zone 1166 of the processing chamber 1100. Excess gas, by-products, etc. will flow into the suction channel 1179 and then exit the processing chamber 1100 by the vacuum system 1178. In one aspect, the gas stream flows in a laminar flow between the gas distribution channel 1128 and the surface of the substrate 1110 and the lower surface 1160 of the chamber lid assembly 1132, such that the reactive gas uniformly contacts the surface of the substrate 1110 and effectively removes the chamber lid assembly. The inside of 1132.

The processing chamber 1100 of Figures 11A-11C has a number of features. In one aspect, the processing chamber 1100 provides a reaction zone 1164 that is smaller than a conventional CVD chamber. The processing chamber 1100 requires less reactive or purge gas to fill the reaction zone 1164 for a particular process. In another aspect, the chamber cover assembly 1132 provided by the processing chamber 1100 has a downwardly sloping or funnel-shaped lower surface 1160, which reduces the underside of the gas venting chamber cover assembly 1132 to the substrate 1110. The speed difference. In yet another aspect, the gas distribution channel 1128 provided by the processing chamber 1100 can slow the flow of airflow. In still another aspect, the gas conduit provided by the processing chamber 1100 is at an angle a to the center of the gas distribution channel 1128. Processing chamber 1100 has other features. Other chamber embodiments for atomic layer deposition include one or more of the above features.

Multiple injection type upper cover assembly

12A-12E, 13A-13C, and 14A-14C illustrate a chamber cover assembly 1232 as a multi-injection type upper cover assembly and for an ALD process according to still another embodiment. As shown in Fig. 12A, the chamber cover assembly 1232 includes a cover 1272 disposed in the intermediate portion of the cover plate 1270. One end of gas conduit 1250a is coupled and in fluid communication with cover 1272, and the other end of gas conduit 1250a extends through cover plate 1270 and is coupled and in fluid communication with the ALD valve and chemical precursor source. Gas conduit 1250a is coupled to and in fluid communication with passage 1268a for injecting excess flow of precursor gas into substrate 1269. Channel 1268a is coupled and in fluid communication with gas node ring 1264a and is in fluid communication with gas distribution channel 1228 via slit 1266a (Figs. 12E, 13C, and 14A-14C).

The gas conduit sleeve 1252 can comprise at least one gas conduit, or can comprise two, three, or more gas conduits. The gas conduit cover 1252 shown in Fig. 12C includes gas conduits 1250b, 1250c. In one embodiment, one end of gas conduit 1250b is coupled and in fluid communication with cover 1272, and the other end of gas conduit 1250b extends through cover plate 1270 and is coupled and in fluid communication with the ALD valve and chemical precursor source. In one embodiment, gas conduits 1250b or 1250c are coupled to each other or to flow with gas passage 1268b Body connectivity. Gas conduit 1250b is coupled and in fluid communication with gas passage 1268b for injecting excess flow of precursor gas into substrate 1269. Gas passage 1268b is coupled and in fluid communication with gas pitch ring 1264b and is in fluid communication with gas distribution passage 1228 via slit 1266b (Fig. 14A-14C).

In some embodiments, gas conduit 1250c is optional. One end of the gas conduit 1250c is coupled and in fluid communication with the cover 1272, and the other end of the gas conduit 1250b extends through the cover plate 1270 and is coupled and in fluid communication with the ALD valve and the gas source, such as a carrier gas source, a purge gas Source, plasma gas source, or chemical precursor source. In another embodiment, the gas conduit 1250c is coupled and in fluid communication with the upper surface of the cover 1272. In yet another embodiment, the gas conduit 1250c is coupled to the gas conduit 1250b, for example, through a Y-junction, and is coupled and in fluid communication with the gas passage 1268b.

The chamber cover assembly 1232 of Figures 12A-12E, 13A-13C, 14A-14C includes a multi-injection substrate 1269 disposed over the cover 1272 and the cover 1270. The multiplexed substrate 1269, the cover 1272, and the cover 1270 constitute a gas distribution channel 1228. The multiple injection substrate 1269 forms the upper portion 1237 of the gas distribution channel 1228, and the cover plate 1270 forms the lower portion 1235 of the gas distribution channel 1228. An additional plate may be placed between the cover 1270 and the cover 1272. In other embodiments, the gas distribution channel 1228 can be comprised of a single material.

Figures 12D-12E illustrate gas passages 1268a, 1268b through multiple injection substrates 1269. A multi-injection cover 1267 is provided on the protruding portion 1261 of the multi-injection substrate 1269 to constitute a gas node ring 1264a therebetween. A multi-injection substrate 1269 is provided on the cover 1272 to form a gas node ring 1264b therebetween. The pin 1265 passes through the hole 1263 of the multiple injection cover 1267 and extends into The trenches 1275 of the substrate 1269 are multiplexed. Similarly, the pin 1277 in the groove 1275 connects the multiple injection substrate 1269 and the cover 1272 (Fig. 12C), while the pin 1276 in the groove 1274 connects the cover 1270 and the cover 1272 (Fig. 13C). During deposition, the first process gas can bypass gas block 1264a from gas channel 1268a and into gas distribution channel 1228 through slit 1266a. Likewise, the second process gas can flow from the gas passage 1268b around the gas pitch ring 1264b and through the slit 1266b into the gas distribution passage 1228.

The slits 1266a, 1266b allow the gas node rings 1264a, 1264b to communicate with the gas distribution channel 1228. The slits 1266a, 1266b of Fig. 12E are at a predetermined angle to the central axis 1233, for example, substantially tangential to the central axis 1233 or the gas distribution channel 1228. In one embodiment, the slits 1266a, 1266b are tangential to the gas distribution channel 1228 at an angle of from about 0 Torr to about 90 angstroms, preferably from about 0 Torr to about 45 angstroms, more preferably from about 0 Torr to about 20 Torr.

Depending on the gas to be delivered, the chamber lid assembly 1232 can include a cooling element and/or a heating element. Controlling the temperature of the chamber lid assembly 1232 prevents gases from decomposing, depositing, or condensing on the chamber lid assembly 1232. For example, a cooling passage 1290 can be provided in the chamber cover assembly 1232 to cool the chamber cover assembly 1232. In another embodiment, a heating element (not shown) can be a component that is embedded or surrounds the chamber lid assembly 1232 for heating the chamber lid assembly 1232. In an embodiment, the parts of the chamber lid assembly 1232 can be separately heated or cooled. For example, referring to FIG. 13C, the chamber cover assembly 1232 includes a cover plate 1270 and a cover 1272, wherein the cover plate 1270 and the cover 1272 constitute a gas distribution passage 1228. The cover 1272 is maintained within a temperature range and the cover 1270 is maintained within another temperature range. For example, heating the cover 1272 with a heating tape or using other heating means prevents The reaction gas is condensed and the cap plate 270 is maintained at ambient temperature. In another embodiment, the cover 1272 can be heated and the cover 1270 can be cooled using a waterway to prevent thermal decomposition of the reactive gases on the cover 1270.

The chamber cover assembly 1232 can comprise components that can be comprised of stainless steel, aluminum, nickel plated aluminum, nickel, or other suitable process materials. In an embodiment, the multiple injection substrate 1269, the cover 1272, and the cover 1270 are each fabricated, machined, forged, or they may be composed of a metal, such as aluminum, aluminum alloy, steel, stainless steel, alloys thereof, or combinations thereof Things. In an embodiment, the additional plate selectively placed between the two contains stainless steel.

In one embodiment, the inner face 1231 of the gas distribution channel 1228 (including the inner faces of the cover 1270 and the cover 1272) and the lower surface 1260 of the chamber cover assembly 1232 include a polished mirror to assist in gas flow along the gas distribution channel 1228 and the chamber cover. The lower surface 1260 of the assembly 1232 forms a laminar flow.

In another embodiment, the inner face 1231 of the gas distribution channel 1228 (including the inner faces of the cover 1270 and the cover 1272) and the lower surface 1260 of the chamber cover assembly 1232 comprise a roughened surface or a mechanically treated surface to increase the overall surface. Surface area. The rough surface makes it easier for the accumulated material to be adhered to the inner surface 1231 and the lower surface 1260. The vapor deposition process often produces an undesired film layer and may peel off from the inner surface 1231 and the lower surface 1260 to contaminate the substrate 1210. In one embodiment, the lower surface 1260 and/or the inner surface 1231 have an average roughness (R _a ) of at least about 10 μin, such as from about 10 μin (about 0.254 μm) to about 200 μin (about 5.08 μm), preferably about 20 μin (about 0.508 μm) to about 100 μin (about 2.54 μm), more preferably about 30 μin (about 0.762 μm) to about 80 μin (about 2.032 μm).

13A and 14A-14C illustrate a cross-section of the chamber cover assembly 1232 that includes a gas distribution channel 1228 that extends through the intermediate portion of the cover plate 1270. The gas node rings 1264a, 1264b extend annularly around the gas distribution channel 1228 and the central axis 1233. The gas distribution channel 1228 extends generally in the direction of the substrate below the chamber lid assembly 1232 during the vertical ALD process. The gas distribution channel 1228 extends through the cover plate 1270 along the central axis 1233 of the cover 1272 to abut the lower surface 1260. Gas distribution channel 1228 extends further across lower surface 1260 into reaction zone 1064. Lower surface 1260 extends from splitter passage 1034b to choke valve 1262. The lower surface 1260 is configured and sized to substantially cover the substrate under the chamber cover assembly 1232 during the ALD process.

The chamber lid assembly 1232 of Figures 13A and 14A-14C can contact the substrate with at least two gas sources or chemical precursors. In other embodiments, the chamber lid assembly 1232 can be reconfigured to contact the substrate with a single gas source (as shown in Figure 5) or with three or more gas sources or chemical precursors (as shown in Figure 6).

In the 14B-14C diagram, when the process gas in the annular gas stream 1220 passes through the specific point 1236, it is forced to expand around the central axis 1233 of the gas distribution channel 1228 by a similar number of processing chambers having a similar configuration but no specific point 1236. Still more. The annular gas stream 1220 can comprise a flow pattern, such as a vortex pattern, a spiral pattern, a spiral pattern, a crimp pattern, a twist pattern, a wound pattern, a swirl pattern, or a derivative thereof. The annular gas stream 1220 extends at least about one turn, preferably at least about 1.5 turns, more preferably at least about 2 turns, more preferably at least about 3 turns, and still more preferably at least about 4, about the central axis 1233 of the gas distribution channel 1228. Circle or above.

In one embodiment, the gas distribution channels illustrated in Figures 13C and 14C The inner diameter of the 1228 from the upper portion 1237 along the central axis 1233 to the specific point 1236 remains substantially unchanged. In another embodiment, the gas distribution channel 1228 is gradually increased or tapered (not shown) from the upper portion 1237 along the central axis 1233 toward the inner diameter of the particular point 1236. However, the inner diameter of the gas distribution passage 1228 gradually increases from the specific point 1236 along the central axis 1233 toward the lower portion 1235 of the lower surface 1260 of the adjacent chamber lid assembly 1232.

In one embodiment, the chamber lid assembly 1232 for processing a substrate having a diameter of 300 mm has the following dimensions. The gas distribution channel 1228 has a diameter in the upper portion 1237 of from about 0.5 inches to about 2 inches, preferably from about 0.75 inches to about 1.5 inches, more preferably from about 0.8 inches to about 1.2 inches, such as about 1 inch. Inches. The gas distribution channel 1228 has a diameter at a particular point 1236 of from about 0.5 inches to about 2 inches, preferably from about 0.75 inches to about 1.5 inches, more preferably from about 0.8 inches to about 1.2 inches, such as about one. English. The gas distribution channel 1228 has a diameter in the lower portion 1235 of from about 1 inch to about 4 inches, preferably from about 1.5 inches to about 3 inches, more preferably from about 1.6 inches to about 2.4 inches, for example about 2 inches. Inches.

The above dimensions are generally applicable to gas distribution channels 1228 that supply a gas flow rate of from about 500 sccm to about 3000 sccm. In other particular embodiments, the size can be varied for a particular gas flow to flow through. In general, the greater the gas flow rate, the larger the diameter size required for the gas distribution channel 1228.

The tapered gas distribution channel 1228 allows the gas to produce less adiabatic expansion. Therefore, there is more heat exchange with the gas, so it is easier to control the gas temperature by controlling the ambient temperature of the gas (i.e., controlling the temperature of the chamber cover assembly 1232). The gas distribution channel 1228 can be tapered and can include one or more Conical inner faces, such as tapered flats, concave faces, convex faces, or combinations thereof, or segments that may include one or more tapered inner faces (ie, a portion is tapered and a portion is not tapered).

In one embodiment, as shown in FIG. 10F, the gas pitch rings 1264a, 1264b are adjacent the upper portion 1237 of the gas distribution channel 1228. In other embodiments, one or more gas pitch rings 1264a, 1264b are disposed between the upper portion 1237 and the lower portion 1235 along the entire length of the gas distribution channel 1228.

Without wishing to be bound by theory, the 14B-14C is a cross-sectional view of the gas distribution channel 1228 of the chamber lid assembly 1232, which illustrates the flow of gas therethrough. Although the flow pattern through the gas distribution channel 1228 cannot be known exactly, the ambiguous annular gas flow 1220 can vortex flow, spiral flow, spiral flow, swirl flow, fast swirl flow, twist flow, winding flow, tortuous flow, crimp flow, vortex The flow, or its derivative flow, flows through the gas distribution channel 1228. The annular flow is formed in the "processing zone" rather than the space separating the substrates. In one aspect, the annular flow 1220 facilitates more efficient evacuation of the air distribution channel 1228 as the vortex flow pattern sweeps the entire inner surface of the gas distribution channel 1228.

Referring to Figures 12C, 13B-13C, and 14C, at least a portion of the lower surface 1260 of the chamber lid assembly 1232 tapers from the gas distribution channel 1228 toward the periphery of the chamber lid assembly 1232 to provide gas flow from the gas distribution channel 1228 through the substrate surface ( That is, a preferred velocity waveform from the center of the substrate to the edge of the substrate. The lower surface 1260 can include one or more tapered faces, such as a flat surface, a concave surface, a convex surface, or a combination thereof. In one embodiment, the lower surface 1260 is a tapered funnel shape.

In an embodiment, the lower surface 1260 is inclined downward to reduce the gas flow. The difference in speed of the lower surface 1260 of the chamber lid assembly 1232 to the substrate, in turn, causes the surface of the substrate to uniformly contact the reactive gas. In one embodiment, the flow cross section between the downwardly inclined lower surface 1260 of the chamber lid assembly 1232 and the surface of the substrate has a ratio of the largest area to the smallest area of less than 2, preferably less than 1.5, more preferably less than 1.3, and further Good is less than 1.

Unexpectedly limited by theory, the salty airflow over the surface of the substrate at a more uniform rate allows the gas to deposit more evenly on the substrate. The salt flow rate is proportional to the gas concentration and is therefore proportional to the rate at which the gas is deposited on the surface of the substrate. Therefore, the surface area of the first substrate having a faster gas flow rate has a faster gas deposition rate with respect to the surface area of the second substrate. The chamber cover assembly 1232 with the downwardly inclined lower surface 1260 allows for more uniform deposition of gas over the entire surface of the substrate, since the lower surface 1260 produces a more uniform velocity, so that the concentration of gas over the surface of the substrate is more uniform. .

Referring to Figures 12C and 13C, a choke 1262 is provided around the chamber cover assembly 1232 adjacent the edge of the substrate placed during the ALD process. When the chamber cover assembly 1232 is assembled to form a treatment zone around the substrate, the choke 1262 includes any member that restricts gas flow through the vicinity of the edge of the substrate.

As shown in Figures 13A-13B, a cover sleeve 1280 having a handle 1282 can cover the cover 1272, the gas conduit 1250a, the gas conduit sleeve 1252, and a portion of the upper surface of the cover plate 1270. The temperature of the chamber lid assembly 1232 can be controlled by a liquid cooling system that connects the water jacket, such as the cooling passage 1290 that extends through the cover plate 1270. Heat such as water flows through the cooling passages 1290 to remove heat from the cover plate 1270. The coolant links 1292a, 1292b are connected to the cooling passages 1290 by hoses or tubes. Coolant connections 1292a, 1292b The other end is connected to the fluid source and fluid recovery by a hose or tube, such as an internal cooling system or a separate cooling system. The coolant links 1292a, 1292b are coupled to the cover 1270 by a support frame 1294. The liquid flowing through the cooling passage 1290 may include water, oil, ethanol, ethylene glycol, glycol ether, or other organic solvent. In one embodiment, the temperature of the cover 1270 or chamber cover assembly 1232 can be maintained between about 0 ° C and about 100 ° C, preferably between about 18 ° C and about 65 ° C, more preferably between about 20 ° C and about Between 50 ° C.

15A-15C illustrate a cross section of one embodiment of a processing chamber 1500 that includes a gas delivery system 1530 for an ALD process. The processing chamber 1500 includes a chamber body 1502 having a sidewall 1504 and a bottom portion 1506. The slit valve 1508 of the processing chamber 1500 can be accessed by a mechanical device (not shown) into and out of the processing chamber 1500 to transfer and retrieve the substrate 1510, such as a 200 mm or 300 mm semiconductor wafer or glass substrate.

The substrate support 1512 supports the substrate 1510 on the substrate receiving surface 1511 in the processing chamber 1500. The substrate support 1512 is provided with an elevation motor 1514 for raising and lowering the substrate support 1512 and the substrate 1510 placed thereon. A lift plate 1516 that connects the lift motor 1518 is disposed within the process chamber 1500 for raising and lowering the lift pins 1520 that are movable through the substrate support 1512. The substrate support 1512 can include a vacuum holder (not shown), an electrostatic chuck (not shown), or a clamp ring (not shown) to secure the substrate 1510 on the substrate support 1512 during the deposition process. .

The temperature of the substrate 1510 placed thereon can be controlled by adjusting the temperature of the substrate support 1512. For example, the substrate support 1512 can be heated using an embedded heating element such as a resistive heater (not shown), or can be used, such as Radiant heat such as a heating lamp (not shown) provided above the substrate support 1512 is heated. A purge ring 1522 can be placed over the substrate support 1512 to define a purge channel 1524 to provide a purge gas around the substrate 1510 to prevent deposits from depositing thereon.

A gas delivery system 1530 is provided in the upper portion of the chamber body 1502 for supplying processing chamber 1500 gases, such as process gases and/or purge gases. The gas delivery system 1530 of Figures 15A-15C can contact the substrate 1510 with at least two gas sources or chemical precursors. In other embodiments, the gas delivery system 1530 can be reconfigured to contact the substrate 1510 with a single gas source (as shown in Figure 5), or with three or more gas sources or chemical precursors (as shown in Figure 6). . Vacuum system 1578 connects suction channel 1579 to discharge any predetermined gas out of process chamber 1500 and assists suction zone 1566 of process chamber 1500 to maintain a predetermined pressure or maintain a predetermined pressure range.

In one embodiment, the gas delivery system 1530 includes a chamber lid assembly 1532 having a gas distribution channel 1534 that extends through a middle portion of the chamber lid assembly 1532. The gas distribution channel 1534 extends in a direction perpendicular to the substrate receiving surface 1511 and extends through the cover plate 1570 along the central axis 1533 of the gas distribution channel 1534 to the lower surface 1560. In one embodiment, a portion of the gas distribution channel 1534 remains substantially cylindrical along a central axis 1533 in the upper portion 1537, and a portion of the gas distribution channel 1534 tapers away from a central axis 1533 in the lower portion 1535. Gas distribution channel 1534 extends further across lower surface 1560 into reaction zone 1564. Lower surface 1560 extends from lower portion 1535 of gas distribution passage 1534 to choke 1562. The lower surface 1560 is configured and sized to substantially cover the substrate receiving surface 1511 of the substrate support 1512. Substrate 1510.

When the process gas in the annular flow 1574 travels along the central axis 1533, it will be forced to expand around the central axis 1533 of the gas distribution channel 1534. The annular gas flow 1574 can include a flow pattern, such as a vortex pattern, a spiral pattern, a spiral pattern, a crimp pattern, a twist pattern, a wound pattern, a swirl pattern, or a derivative thereof. The annular gas stream 1574 extends about at least about 1 turn, preferably at least about 1.5 turns, more preferably at least about 2 turns, more preferably at least about 3 turns, and still more preferably at least about 4, about the central axis 1533 of the gas distribution channel 1534. Circle or above.

Gas distribution channel 1534 has gas inlets 1536a, 1536b for providing gas flow from two sets of similar valves 1542a/1552a, 1542b/1552b, which may be provided together or individually. In one configuration, valve 1542a and valve 1542b are coupled to different sources of reactive gas, but are preferably coupled to the same source of purge gas. For example, the valve 1542a is coupled to the reactive gas source 1538, the valve 1542b is coupled to the reactive gas source 1539, and the two valves 1542a, 1542b are coupled to the purge gas source 1540. Valves 1542a, 1542b each include a transfer line 1543a, 1543b having a valve seat assembly 1544a, 1544b, each of which includes an evacuation line 1545a, 1545b having a valve seat assembly 1546a, 1546b. Transfer lines 1543a, 1543b connect reactive gas sources 1538, 1539 and connect gas inlets 1536a, 1536b of gas distribution channel 1534. The valve seat assemblies 1544a, 1544b of the transfer lines 1543a, 1543b control the flow of reactant gases from the reactive gas sources 1538, 1539 to the gas distribution channel 1534. The evacuation lines 1545a, 1545b are connected to the purge gas source 1540 and to the transfer line 1543a downstream of the valve seat assemblies 1544a, 1544b of the transfer lines 1543a, 1543b, 1543b intersects. The valve seat assemblies 1546a, 1546b of the evacuation lines 1545a, 1545b control the flow of purge gas from the purge gas source 1540 to the gas distribution channel 1534. If the carrier gas is used to transport the reaction gases of the reaction gas sources 1538, 1539, the carrier gas is preferably the same as the purge gas (for example, argon gas is used as the carrier gas and the purge gas).

The valve seat assemblies 1544a, 1544b, 1546a, 1546b can each include a baffle (not shown) and a valve seat (not shown). Applying a bias or starting it can open or close the partition. The partition can be pneumatic or electric. Pneumatic valves include pneumatic valves available from Fujikin and Veriflow. The electric valve includes an electric valve available from Fujikin Corporation. For example, the ALD valve may be a Fujikin model FPR-UDDFAT-21-6.35-PI-ASN or a Fujikin model FPR-NHDT-21-6.35-PA-AYT. The programmable logic controllers 1548a, 1548b are coupled to valves 1542a, 1542b for controlling the diaphragms of the valve seat assemblies 1544a, 1544b, 1546a, 1546b of the actuating valves 1542a, 1542b. The gas pulse period generated by the pneumatic valve can be 0.020 seconds. The electric valve produces a gas pulse period of 0.005 seconds. Motorized valves typically require a contact valve and a programmable logic controller drive.

Valves 1542a, 1542b, respectively, can be zero dead volume valves that flush the reaction gases of transfer lines 1543a, 1543b when valve seat assemblies 1544a, 1544b are closed. For example, the evacuation lines 1545a, 1545b can be provided with valve seat assemblies 1544a, 1544b that abut the transfer lines 1543a, 1543b. When the valve seat assemblies 1544a, 1544b are closed, the vent lines 1545a, 1545b can supply purge gas to flush the transfer lines 1543a, 1543b. In an embodiment, the evacuation lines 1545a, 1545b are slightly aligned with the transfer lines 1543a, 1543b. The valve seat assemblies 1544a, 1544b are spaced apart such that the purge gas does not feed directly into the valve seat assemblies 1544a, 1544b when the valve seat assemblies 1544a, 1544b are opened. The zero invalid volume valve here means that the valve has a negligible invalid volume (ie, the invalid volume is not necessarily zero).

Each set of valves 1542a/1552a, 1542b/1552b can be used to provide a combined gas flow and/or individual gas flow of the reactive gas with the purge gas. Referring to valve 1542a/1552a, an example of a combined gas stream of reactant gas and purge gas includes a stream of continuous purge gas from purge gas source 1540 and flowing through evacuation line 1545a and a pulse of reactant gas from reactant gas source 1538 and flowing through transfer line 1543a. The purge gas can be continuously supplied by opening the separator of the valve seat assembly 1546a of the evacuation line 1545a. The reactant gas of the reactive gas source 1538 can be pulsed by opening and closing the separator of the valve seat assembly 1544a of the transfer line 1543a. Referring to valves 1542a/1552a, examples of individual gas streams of reactive gas and purge gas include purge gas pulses from purge gas source 1540 and flowing through evacuation line 1545a and reaction gas pulses from reaction gas source 1538 and flowing through transfer line 1543a. The purge gas can be pulsed by opening and closing the separator of the valve seat assembly 1546a of the evacuation line 1545a. The reactant gas of the reactive gas source 1538 can be pulsed by opening and closing the separator of the valve seat assembly 1544a of the transfer line 1543a.

Delivery lines 1543a, 1543b of valves 1542a, 1542b may be coupled to gas inlets 1536a, 1536b via gas conduits 1550a, 1550b. Gas conduits 1550a, 1550b can be integral or separate components of valves 1542a, 1542b. In one aspect, valves 1542a, 1542b are in close proximity to gas distribution passage 1534, which reduces delivery lines 1543a, 1543b and gas conduits. 1550a, 1550b are unnecessarily disposed between the valves 1542a, 1542b and the gas inlets 1536a, 1536b.

Unexpectedly limited by theory, the diameter of the salt gas distribution channel 1534 is fixed along the central axis 1533 from the upper portion 1537 of the gas distribution channel 1534 to a particular point and increases from a particular point to the lower portion 1535 of the gas distribution channel 1534. The gas passing through the gas distribution channel 1534 produces less adiabatic expansion which helps control the temperature of the process gas within the annular gas stream 1574. For example, a sudden adiabatic expansion of the gas entering the gas distribution channel 1534 via the gas inlets 1536a, 1536b will cause the gas temperature to drop, causing the gas to condense to form droplets. On the other hand, the gas distribution channel 1534, which is tapered, allows the gas to generate less adiabatic expansion. Therefore, there is more heat exchange with the gas, so it is easier to control the gas temperature by controlling the ambient temperature of the gas (i.e., controlling the temperature of the chamber lid assembly 1532). The gas distribution channel 1534 can be tapered and can include one or more tapered inner faces, such as tapered flats, concave faces, convex faces, or combinations thereof, or segments that can include one or more tapered inner faces (ie a part is tapered and a part is not tapered).

In an embodiment, the gas inlets 1536a, 1536b are adjacent the upper portion 1537 of the gas distribution channel 1534. In other embodiments, one or more gas inlets 1536a, 1536b are disposed between upper portion 1537 and lower portion 1535 along the entire length of gas distribution passage 1534.

Unexpectedly limited by theory, Figure 15C is a cross-sectional view of the gas distribution channel 1534 of the chamber lid assembly 1532, which illustrates the flow of gas therethrough. Although it is not possible to know exactly the flow pattern through the gas distribution channel 1534, the salty annular airflow 1574 (Fig. 15C) can vortex flow, spiral flow, spiral flow, and hit The swirling flow, the fast swirling flow, the twisted flow, the winding flow, the tortuous flow, the crimped flow, the swirling flow, or a derivative thereof flow through the gas distribution passage 1534. As shown in Fig. 15C, the annular flow is formed in the "processing zone" rather than the space separating the substrate 1510. In one aspect, the annular flow 1574 facilitates more efficient venting of the air distribution channel 1534 as the vortex flow pattern sweeps the entire inner surface of the gas distribution channel 1534.

In one embodiment, the distance 1575 of Figure 15C refers to the position 1576b from the location 1576a of the surface of the substrate 1510 to the upper portion 1537 of the gas distribution channel 1534. When it is not expected to swirl over the surface of the substrate 1510, the distance 1575 is sufficient to allow the annular gas stream 1574 to dissipate downwardly. The salty annular airflow 1574 is a laminar flow that effectively removes the surface of the chamber lid assembly 1532 and substrate 1510. In another embodiment, the distance 1575 or the gas distribution channel 1534 extends along the central axis 1533 by a length of from about 3 inches to about 9 inches, preferably from about 3.5 inches to about 7 inches, more preferably about 4 inches to about 6 inches, for example 5 inches.

Referring to Figure 15A, at least a portion of the lower surface 1560 of the chamber lid assembly 1532 tapers from the gas distribution passage 1534 toward the periphery of the chamber lid assembly 1532 to provide gas flow from the gas distribution passage 1534 through the surface of the substrate 1510 (i.e., from the center of the substrate). A preferred velocity waveform to the edge of the substrate. The lower surface 1560 can include one or more tapered faces, such as a flat surface, a concave surface, a convex surface, or a combination thereof. In one embodiment, the lower surface 1560 is a tapered funnel shape.

In one embodiment, the lower surface 1560 is sloped downward to reduce the difference in velocity of the gas flow through the lower surface 1560 of the chamber lid assembly 1532 to the substrate 1510, thereby uniformly contacting the surface of the substrate 1510 with the reactive gas. In an embodiment, the chamber cover The flow cross section between the downwardly inclined lower surface 1560 of the assembly 1532 and the surface of the substrate 1510 has a ratio of the largest area to the smallest area of less than 2, preferably less than 1.5, more preferably less than 1.3, and even more preferably less than 1.

Without wishing to be bound by theory, the salty gas stream will more uniformly deposit on the substrate 1510 across the surface of the substrate 1510 at a more uniform rate. The salt flow rate is proportional to the gas concentration and is therefore proportional to the rate at which the gas is deposited on the surface of the substrate 1510. Therefore, the first surface region of the substrate 1510 having a faster gas flow rate has a faster gas deposition rate than the second surface region. The chamber cover assembly 1532 with the downwardly inclined lower surface 1560 allows for more uniform deposition of gas over the entire surface of the substrate 1510, since the lower surface 1560 produces a more uniform velocity, so that the concentration of gas over the surface of the substrate 1510 More even.

Referring to Figure 15A, a choke 1562 is disposed around the chamber cover assembly 1532 adjacent the edge of the substrate 1510. When the chamber cover assembly 1532 is assembled to form a treatment zone around the substrate 1510, the choke 1562 includes any member that restricts gas flow through the region near the edge of the substrate 1510.

In a particular embodiment, the distance between the choke 1562 and the substrate support 1512 is from about 0.04 inches to about 2.0 inches, preferably from about 0.04 inches to about 0.2 inches. The spacing can vary depending on the delivery gas and deposition process conditions. By using the choke 1562 to separate the pressure uneven distribution zone of the reaction zone 1564 and the suction zone 1566 (Fig. 15A), the volume distribution between the chamber cover assembly 1532 and the substrate 1510 or the pressure distribution within the reaction zone 1564 can be more uniform.

Referring to Fig. 15A, in one aspect, since the reaction zone 1564 and the suction zone 1566 have been separated, the reaction gas or the purge gas only needs to be appropriately filled. The reaction zone 1564 is filled to allow the substrate 1510 to be in sufficient contact with the reactive gas or purge gas. In conventional chemical vapor deposition, a conventional chamber needs to simultaneously and uniformly supply a combined gas flow of a reaction gas to the entire surface of the substrate to ensure that the reaction gases uniformly react with each other across the surface of the substrate 1510. In the atomic layer deposition, the processing chamber 1500 successively introduces a reaction gas to the surface of the substrate 1510, so that a thin layer of the reactant is alternately adsorbed on the surface of the substrate 1510. Therefore, the atomic layer deposition does not require a reaction gas to reach the surface of the substrate 1510 at the same time. Instead, a sufficient amount of reactive gas is required to cause a thin layer of reactant to adsorb to the surface of the substrate 1510.

Since the volume of reaction zone 1564 is small compared to the internal volume of a conventional CVD chamber, less gas is required to fill the reaction zone 1564 for the particular process of the atomic layer deposition process. For example, in the case of a chamber embodiment for treating a substrate having a diameter of 200 mm, the volume of the reaction zone 1564 is about 1000 cm ³ or less, preferably about 500 cm ³ or less, more preferably about 200 cm ³ or less. For example, a chamber embodiment for treating a substrate having a diameter of 300 mm, the volume of the reaction zone 1564 is about 3000 cm ³ or less, preferably about 1500 cm ³ or less, more preferably about 600 cm ³ or less. In an embodiment, the substrate support 1512 can be raised or lowered to adjust the volume of the reaction zone 1564 for deposition. The smaller the volume of the reaction zone 1564, the less the amount of deposition gas or purge gas that needs to flow into the process chamber 1500. Due to the reduced gas consumption, it can increase the capacity of the processing chamber 1500 and reduce waste, thereby reducing operating costs.

As shown in Figures 15A-15C, the lid assembly 1532 includes a cover 1572 and a cover 1570, wherein the cover 1572 and the cover 1570 constitute a gas distribution channel 1534. In one embodiment, as shown in Figures 15A-15C, the processing chamber 1500 includes a gas node ring 1568a, 1568b and slits 1569a, 1569b. Cover 1572. In another embodiment, as shown in Figures 12A-14C, the processing chamber 1500 includes a cover, a gas node, and a slit. An additional plate (not shown) may be placed between the cover 1570 and the cover 1572. The additional plate is used to adjust (e.g., enlarge) the spacing of the cover 1572 from the cover 1570, thereby changing the length of the gas distribution channel 1534 that it is constructed. In another embodiment, the additional plate selectively placed between the cover 1570 and the cover 1572 contains stainless steel. In other embodiments, the gas distribution channel 1534 can be comprised of a single material.

Depending on the gas to be delivered, the chamber lid assembly 1532 can include a cooling element and/or a heating element. The temperature of the control chamber cover assembly 1532 prevents gases from decomposing, depositing, or condensing on the chamber lid assembly 1532. For example, a water channel (such as cooling channel 1290 of FIG. 12A) may be provided in chamber lid assembly 1532 to cool chamber lid assembly 1532. In another embodiment, the heating element (not shown) can be a component that is embedded or surrounds the chamber lid assembly 1532 for heating the chamber lid assembly 1532. In an embodiment, the parts of the chamber lid assembly 1532 can be separately heated or cooled. For example, with reference to Figure 15A, the lid assembly 1532 includes a cover plate 1570 and a cover 1572, wherein the cover plate 1570 and the cover 1572 constitute a gas distribution channel 1534. The cover 1572 is maintained within a temperature range and the cover 1570 is maintained within another temperature range. For example, heating the cover 1572 with a heating tape or using other heating means prevents condensation of the reactive gas and the cover 1570 is maintained at ambient temperature. In another embodiment, the cover 1572 can be heated and the cover 1570 can be cooled using a waterway to prevent thermal decomposition of the reactive gases on the cover 1570.

The lid assembly 1532 can comprise a component that can be comprised of stainless steel, aluminum, nickel plated aluminum, nickel, alloys thereof, or other suitable materials. In an embodiment, Cover 1572 and cover plate 1570 are each fabricated, machined, forged, or they may be comprised of a metal, such as aluminum, aluminum alloy, steel, stainless steel, alloys thereof, or combinations thereof.

In one embodiment, the inner face 1531 of the gas distribution channel 1534 (including the inner faces of the cover 1570 and the cover 1572) and the lower surface 1560 of the chamber cover assembly 1532 include a polished mirror to assist in gas flow along the gas distribution channel 1534 and the chamber cover The lower surface 1560 of the assembly 1532 forms a laminar flow. In another embodiment, the inner faces of the gas conduits 1550a, 1550b can be electropolished to help form a laminar flow of gas.

In yet another embodiment, the inner face 1531 of the gas distribution channel 1534 (including the inner surface of the cover 1570 and the cover 1572) and the lower surface 1560 of the chamber cover assembly 1532 comprise a roughened surface or a mechanically treated surface to increase the overall surface. Surface area. The rough surface makes it easier for the undesired accumulation material to adhere to the inner surface 1531 and the lower surface 1560. The vapor deposition process often produces an undesired film layer and may peel off from the inner surface 1531 and the lower surface 1560 to contaminate the substrate 1510. In one embodiment, the lower surface 1560 and/or the inner surface 1531 have an average roughness (R _a ) of at least about 10 μin, such as from about 10 μin (about 0.254 μm) to about 200 μin (about 5.08 μm), preferably about 20 μin (about 0.508 μm) to about 100 μin (about 2.54 μm), more preferably about 30 μin (about 0.762 μm) to about 80 μin (about 2.032 μm).

The control unit 1580, such as a programmable PC or workstation computer, is coupled to the processing chamber 1500 for controlling process conditions. For example, in various stages of the substrate processing procedure, control unit 1580 is used to control process gases and purge gases from various gas sources 1538, 1539, 1540 Flow through valves 1542a, 1542b. For example, the control unit 1580 includes a central processing unit (CPU) 1582, a support circuit 1584, and a memory 1586 in which the associated control software 1583 is stored.

Control unit 1580 can be any type of general purpose computer processor that can be used in industrial settings to control various chambers and sub-processors. The CPU 1582 can use any suitable memory 1586, such as a random access memory, a read only memory, a floppy disk drive, a hard disk drive, or other near or far end digital storage. Various support circuits can be connected to the CPU 1582 to support the processing chamber 1500. Control unit 1580 can be coupled to another controller adjacent to the individual chamber components, such as programmable logic controllers 1548a, 1548b of valves 1542a, 1542b. Bidirectional communication with control unit 1580 and other components of processing chamber 1500 is operative via a plurality of signal lines (hereinafter collectively referred to as signal bus 1588, partially depicted in FIG. 15A). In addition to the programmable gas controllers 1548a, 1548b that control the process gases of the gas sources 1538, 1539, 1540 and the purge gases and valves 1542a, 1542b, the control unit 1580 is remotely responsible for automatically controlling other wafer processing operations, such as transferring wafers. , control of temperature, evacuation chamber, etc., part of which will be described elsewhere.

Referring to Figures 15A-15C, upon continuous operation, a mechanical device (not shown) transfers substrate 1510 to processing chamber 1500 via slit valve 1508. The lift pins 1520 cooperate with the mechanical device to place the substrate 1510 onto the substrate support 1512. The substrate support 1512 lifts the substrate 1510 against the lower surface 1560 of the chamber lid assembly 1532. Together or individually (i.e., pulsed), a first gas stream is injected into the gas distribution channel 1534 of the processing chamber 1500 using a valve 1542a and a second gas stream is injected into the processing chamber 1500 using a valve 1542b. The first gas stream may comprise purified gas The continuously supplied purge gas of the bulk source 1540 and the pulsed supply of reactant gases from the reactive gas source 1538, or may include a pulsed supply of reactant gases from the reactive gas source 1538 and a purged gas supplied from the purged gas source 1540. The second gas stream may comprise a continuously supplied purge gas from purge gas source 1540 and a pulsed supply of reaction gas from reaction gas source 1539, or may include a pulsed supply of reactant gas from reaction gas source 1539 and from purge gas source 1540. Pulsed supply of purge gas.

The annular flow 1574 flows through the gas distribution passage 1534 in a vortex flow manner to sweep the entire inner surface of the gas distribution passage 1534. The annular gas stream 1574 dissipates downward toward the surface of the substrate 1510. As the gas flows through the gas distribution channel 1534, the gas flow rate will slow down. The gas stream then flows through the surface of the substrate 1510 and the lower surface 1560 of the lid assembly 1532. The downwardly sloping lower surface 1560 of the chamber lid assembly 1532 helps to reduce the difference in speed of airflow across the surface of the substrate 1510. The gas stream then flows through the choke valve 1562 into the suction zone 1566 of the processing chamber 1500. Excess gas, by-products, etc. will flow into the suction channel 1579 and then exit the processing chamber 1500 by the vacuum system 1578. In one aspect, the gas stream flows in a laminar flow between the gas distribution channel 1534 and the surface of the substrate 1510 and the lower surface 1560 of the chamber lid assembly 1532, such that the reactive gas uniformly contacts the surface of the substrate 1510 and effectively removes the chamber lid assembly. Inside the 1532.

The processing chamber 1500 of Figures 15A-15C has a number of features. In one aspect, the processing chamber 1500 provides a reaction zone 1564 volume that is smaller than a conventional CVD chamber. The processing chamber 1500 requires less reactive or purge gas to fill the reaction zone 1564 for a particular process. In another aspect, the chamber cover assembly 1532 provided by the processing chamber 1500 has a downwardly sloped or funnel-shaped lower surface. 1560, this reduces the difference in speed of the gas flow through the bottom surface of the chamber lid assembly 1532 to the substrate 1510. In yet another aspect, the gas distribution channel 1534 provided by the processing chamber 1500 can slow the flow of airflow. In still another aspect, the gas conduit provided by the processing chamber 1500 is at an angle a to the center of the gas distribution channel 1534. Processing chamber 1500 has other features. Other chamber embodiments for atomic layer deposition include one or more of the above features.

Expanded cover type upper cover assembly

In another embodiment, FIGS. 16A-16E illustrate a chamber cover assembly 1632 having an enlarged cover for an ALD process. 17A-17D illustrate a cross section of a processing chamber 1700 in accordance with yet another embodiment, including an enlarged cover 1772 and a gas delivery system 1730 for an ALD process.

In one embodiment, as shown in FIG. 16A, the lid assembly 1632 includes a cover 1672 disposed in the intermediate portion of the cover 1670. One end of gas conduit 1650a is coupled and in fluid communication with cover 1672, and the other end of gas conduit 1650a extends through cover plate 1670 and is coupled and in fluid communication with the ALD valve and chemical precursor source. In an embodiment, the gas conduit 1650a is directly coupled and in fluid communication with the gas distribution passage 1628. Alternatively, gas conduit 1650a can be indirectly coupled and in fluid communication with gas distribution passage 1628.

The gas conduit sleeve 1652 can comprise at least one gas conduit, or can comprise two, three, or more gas conduits. The gas conduit sleeve 1652 illustrated in Figures 16B-16D includes gas conduits 1650b, 1650c. In one embodiment, one end of the gas conduit 1650b is coupled and in fluid communication with the cover 1672, and the other end of the gas conduit 1650b extends through the cover 1670 and is coupled to and ALD The valve and chemical precursor source are in fluid communication. In another embodiment, the gas conduit 1650b or 1650c is directly coupled and in fluid communication with the gas distribution passage 1628. Alternatively, gas conduit 1650b or 1650c can be indirectly coupled and in fluid communication with gas distribution passage 1628.

In some embodiments, gas conduit 1650c is optional. One end of the gas conduit 1650c is coupled to and in fluid communication with the cover 1672, and the other end of the gas conduit 1650b extends through the cover plate 1670 and is coupled and in fluid communication with the ALD valve and the gas source, such as a carrier gas source, a purge gas Source, plasma gas source, or chemical precursor source. In another embodiment, the gas conduit 1650c is coupled and in fluid communication with the upper surface of the cover 1672. In yet another embodiment, the gas conduit 1650c is coupled to the gas conduit 1650b, for example, through a Y-junction, and is coupled and in fluid communication with the gas passage 1668b.

The lid assembly 1632 of Figures 16D-16E includes covers 1672 and 1670, wherein the cover 1672 and the cover 1670 constitute a gas distribution channel 1628. An additional plate (not shown) may be placed between the cover 1670 and the cover 1672. A pin 1676 in the groove 1674 connects the cover plate 1670 and the cover 1672 (Fig. 16D). The additional plate is used to adjust (e.g., enlarge) the spacing of the cover 1672 from the cover 1670, whereby the length of the gas distribution channel 1628 formed therein can be varied. In another embodiment, the additional plate selectively placed between the cover 1670 and the cover 1672 contains stainless steel. In other embodiments, the gas distribution channel 1628 can be comprised of a single material.

Depending on the gas to be delivered, the chamber lid assembly 1632 can include a cooling element and/or a heating element. The temperature of the control chamber cover assembly 1632 prevents gases from decomposing, depositing, or condensing on the chamber lid assembly 1632. For example, cooling channel 1690 A chamber cover assembly 1632 can be provided to cool the chamber cover assembly 1632. In another embodiment, a heating element (not shown) can be a component that is embedded or surrounds the chamber lid assembly 1632 for heating the chamber lid assembly 1632.

In an embodiment, the parts of the chamber lid assembly 1632 can be separately heated or cooled. For example, with reference to Figures 16D-16E, the lid assembly 1632 includes a cover plate 1670 and a cover 1672, wherein the cover plate 1670 and the cover 1672 constitute a gas distribution channel 1628. The cover 1672 is maintained within a temperature range and the cover 1670 is maintained within another temperature range. For example, heating the cover 1672 with a heating tape or using other heating means prevents condensation of the reactive gas and the cover 1670 is maintained at ambient temperature. In another embodiment, the cover 1672 can be heated and the cover 1670 can be cooled using a waterway to prevent thermal decomposition of the reactive gases on the cover 1670.

The lid assembly 1632 can comprise a component that can be comprised of stainless steel, aluminum, nickel plated aluminum, nickel, or other suitable material. In an embodiment, the cover 1672 and the cover 1670 are each fabricated, machined, forged, or they may be comprised of a metal, such as aluminum, aluminum alloy, steel, stainless steel, alloys thereof, or combinations thereof.

In an embodiment, the inner face 1631 of the gas distribution channel 1628 (including the inner surface of the cover 1670 and the cover 1672) and the lower surface 1660 of the chamber cover assembly 1632 include a polished mirror to assist gas along the enlarged channel 1634 and the chamber cover assembly. The lower surface 1660 of 1632 forms a laminar flow. In another embodiment, the inner faces of the gas conduits 1650a, 1650b can be electropolished to help form a laminar flow of gas.

In yet another embodiment, the inner face 1631 of the gas distribution channel 1628 (including the inner faces of the cover 1670 and the cover 1672) and the lower surface 1660 of the chamber cover assembly 1632 comprise a roughened surface or a mechanically treated surface to increase the overall surface. Surface area. The rough surface allows the undesired buildup material to adhere more easily to the inner face 1631 and the lower face 1660. The vapor deposition process often produces an undesired film layer and may peel off from the inner surface 1631 and the lower surface 1660 to contaminate the substrate 1610. In one embodiment, the lower surface 1660 and/or the inner surface 1631 have an average roughness (R _a ) of at least about 10 μin, such as from about 10 μin (about 0.254 μm) to about 200 μin (about 5.08 μm), preferably about 20 μin (about 0.508 μm) to about 100 μin (about 2.54 μm), more preferably about 30 μin (about 0.762 μm) to about 80 μin (about 2.032 μm).

16D-16E illustrate a cross-section of the chamber lid assembly 1632 that includes a gas distribution passage 1628 that extends through the intermediate portion of the cover plate 1670. The gas distribution channel 1628 extends generally in the direction of the substrate below the chamber lid assembly 1632 during the vertical ALD process. The gas distribution channel 1628 extends through the cover plate 1670 along the central axis 1633 of the cover 1672 to abut the lower surface 1660. Gas distribution channel 1628 extends further across lower surface 1660 into reaction zone 1064. Lower surface 1660 extends from gas distribution passage 1628 to choke 1662. The lower surface 1660 is configured and sized to substantially cover the substrate under the chamber lid assembly 1632 during the ALD process.

The chamber lid assembly 1632 of Figures 16A-16E can contact the substrate with at least two gas sources or chemical precursors. In other embodiments, the chamber lid assembly 1632 can be reconfigured to contact the substrate with a single gas source (as shown in Figure 5) or with three or more gas sources or chemical precursors (as shown in Figure 6).

In Figure 16E, when the process gas in the annular gas stream 1620 is along As the center shaft 1633 travels, it will be forced to expand around the central axis 1633 of the gas distribution channel 1628. The annular gas stream 1620 can comprise a flow pattern, such as a vortex pattern, a spiral pattern, a spiral pattern, a crimp pattern, a twist pattern, a wound pattern, a swirl pattern, or a derivative thereof. The annular gas stream 1620 extends about at least about 1 turn, preferably at least about 1.5 turns, more preferably at least about 2 turns, more preferably at least about 3 turns, and still more preferably at least about 4, about the central axis 1633 of the gas distribution channel 1628. Circle or above.

In one embodiment, referring to Figures 16A-16E, gas conduits 1650a, 1650b, 1650c and gas passages 1668a, 1668b can be placed in any angular relationship with central axis 1633 of gas distribution passage 1628. Gas conduits 1650a, 1650b, 1650c and/or gas passages 1668a, 1668b allow process gas to flow through gas inlets 1638a, 1638b into gas distribution passage 1628. The gas conduits 1650a, 1650b or 1650c, or the gas passages 1668a or 1668b are preferably vertical central axes 1633 (where +β, -β=90∘), or each gas conduit 1650a, 1650b or 1650c, or gas passage 1668a or 1668b The center line is at an angle +β or -β with the central axis 1633 (wherein, as shown by the central axis 1733 of Fig. 17C, 0 ∘ < + β < 90 ∘ or 0 ∘ < - β < 90 ∘). The gas conduits 1650a, 1650b, 1650c and the gas passages 1668a, 1668b may be horizontally disposed perpendicular to the central axis 1633, or may be inclined downward by +β angle or upwardly by -β angle to allow gas to flow from the gas inlets 1638a, 1638b to the wall of the gas distribution passage 1628. Instead of flowing directly down the substrate, this helps reduce the likelihood of blowing down the reactants adsorbed on the surface of the substrate.

In addition, the gas conduits 1650a, 1650b, 1650c and the gas passages 1668a, 1668b are from the transfer line or the ALD valve to the gas inlet 1638a, The diameter of 1638b can be gradually increased to help slow down the gas flow before it enters gas distribution path 1628. For example, the inner diameters of the gas conduits 1650a, 1650b, 1650c and gas passages 1668a, 1668b may be gradually increased, or they may comprise a plurality of connected conduits of increasing inner diameter.

In one embodiment, the gas distribution channel 1628 illustrated in Figures 16D-16E remains substantially unchanged from the upper portion 1637 along the central axis 1633 to the inner diameter of the particular point 1636. In another embodiment, the gas distribution channel 1628 is gradually increased or tapered (not shown) from the upper portion 1637 along the central axis 1633 to the inner diameter of the particular point 1636. However, the inner diameter of the gas distribution passage 1628 gradually increases from a particular point 1636 along the central axis 1633 toward the lower portion 1635 of the lower surface 1660 of the adjacent chamber lid assembly 1632.

In one embodiment, the chamber lid assembly 1632 for processing a substrate having a diameter of 300 mm has the following dimensions. The gas distribution channel 1628 has a diameter in the upper portion 1637 of from about 0.5 inches to about 2 inches, preferably from about 0.75 inches to about 1.5 inches, more preferably from about 0.8 inches to about 1.2 inches, such as about 1 inch. Inches. The gas distribution channel 1628 has a diameter at a particular point 1636 of from about 0.5 inches to about 2 inches, preferably from about 0.75 inches to about 1.5 inches, more preferably from about 0.8 inches to about 1.2 inches, such as about one. English. The gas distribution channel 1628 has a diameter in the lower portion 1635 of from about 1 inch to about 4 inches, preferably from about 1.5 inches to about 3 inches, more preferably from about 1.6 inches to about 2.4 inches, for example about 2 inches. Inches.

The above dimensions are generally applicable to gas distribution channels 1628 that supply a gas flow rate of from about 500 sccm to about 3000 sccm. In other particular embodiments, the size can be varied for a particular gas flow to flow through. In general, the more gas flow Larger, the larger the diameter of the gas distribution path 1628 is required.

The tapered gas distribution channel 1628 can cause less adiabatic expansion of the gas. Therefore, there is more heat exchange with the gas, so it is easier to control the gas temperature by controlling the ambient temperature of the gas (i.e., controlling the temperature of the chamber lid assembly 1632). The gas distribution channel 1628 can be tapered and can include one or more tapered inner faces, such as tapered faces, concave faces, convex faces, or combinations thereof, or can include one or more tapered inner faces. (ie a part is tapered and a part is not tapered).

In one embodiment, as shown in FIG. 16E, gas inlets 1638a, 1638b are adjacent to upper portion 1637 of gas distribution passage 1628. In other embodiments, one or more gas inlets 1638a, 1638b are disposed in the upper portion 1637 of the gas distribution channel 1628.

The centerlines of the gas conduits 1650a, 1650b, 1650c and the gas passages 1668a, 1668b are respectively at an angle a to the radial diameter of the gas distribution passage 1628, similar to the 17C diagram, wherein the centerlines 1776a, 1776b of the gas conduits 1750a, 1750b are respectively An angle α is formed with the radial line passing through the center of the gas distribution channel 1734. The inlets of the gas inlet gas conduits 1650a, 1650b, 1650c and gas passages 1668a, 1668b are preferably disposed at an angle of inclination α (where α > 0 ∘) such that the gas flows in the annular direction as indicated by the annular gas flow 1620 (Fig. 16E). Supplying the gas at the angle of inclination α without direct flow to the wall of the enlarged passage (i.e., a = 0 ∘) helps to form a laminar flow rather than turbulent flow through the gas distribution passage 1628. The laminar flow through the gas distribution channel 1628 facilitates removal of the inner face of the gas distribution channel 1628 and other surfaces of the chamber lid assembly 1632. In contrast, turbulence does not flow uniformly through the inner and other surfaces of the gas distribution channel 1628, and Contains dead ends that cannot be reached by airflow. In one aspect, gas conduits 1650a, 1650b, 1650c are spaced apart from gas passages 1668a, 1668b and corresponding gas inlets 1638a, 1638b and direct the flow in the same annular direction (ie, clockwise or counterclockwise).

Unexpectedly limited by theory, Figure 16E is a cross-sectional view of the gas distribution channel 1628 of the chamber lid assembly 1632, which illustrates the flow of gas therethrough. Although the flow pattern through the gas distribution channel 1628 cannot be known exactly, the ambiguous annular gas flow 1620 can vortex flow, spiral flow, spiral flow, swirl flow, fast swirl flow, twist flow, winding flow, tortuous flow, crimp flow, vortex The flow, or its derivative flow, flows through the gas distribution channel 1628. The annular flow is formed in the "processing zone" rather than the space separating the substrates. In one aspect, the annular flow 1620 facilitates more efficient evacuation of the air distribution channel 1628 as the vortex flow pattern sweeps the entire inner surface of the gas distribution channel 1628.

Referring to Figures 16C-16E, at least a portion of the lower surface 1660 of the chamber lid assembly 1632 tapers from the gas distribution passage 1628 toward the periphery of the chamber lid assembly 1632 to provide gas flow from the gas distribution passage 1628 through the surface of the substrate (i.e., from the substrate). The preferred velocity waveform from the center to the edge of the substrate. The lower surface 1660 can include one or more tapered faces, such as a flat surface, a concave surface, a convex surface, or a combination thereof. In an embodiment, the lower surface 1660 is a tapered funnel shape.

In one embodiment, the lower surface 1660 is sloped downward to reduce the difference in speed of the gas flow through the lower surface 1660 of the chamber lid assembly 1632 to the substrate, thereby uniformly contacting the surface of the substrate with the reactive gases. In one embodiment, the flow cross section between the downwardly inclined lower surface 1660 of the chamber lid assembly 1632 and the surface of the substrate has a ratio of the largest area to the smallest area of less than 2, preferably less than 1.5, more preferably less. At 1.3, it is better than less than 1.

Unexpectedly limited by theory, the salty airflow over the surface of the substrate at a more uniform rate allows the gas to deposit more evenly on the substrate. The salt flow rate is proportional to the gas concentration and is therefore proportional to the rate at which the gas is deposited on the surface of the substrate. Therefore, the surface area of the first substrate having a faster gas flow rate has a faster gas deposition rate with respect to the surface area of the second substrate. The chamber cover assembly 1632, which slopes downwardly from the lower surface 1660, allows for more uniform deposition of gas throughout the surface of the substrate, since the lower surface 1660 produces a more uniform velocity, so that the concentration of gas over the surface of the substrate is more uniform. .

Referring to Figures 16C-16E, a choke 1662 is provided around the chamber cover assembly 1632 adjacent the edge of the substrate placed during the ALD process. When the chamber cover assembly 1632 is assembled to form a treatment zone around the substrate, the choke 1662 includes any member that restricts gas flow through the vicinity of the edge of the substrate.

As shown in Figures 16B-16D, a cover sleeve 1680 having a handle 1682 can cover the cover 1672, the gas conduit 1650a, the gas conduit sleeve 1652, and a portion of the upper surface of the cover plate 1670. The temperature of the chamber lid assembly 1632 can be controlled by a liquid cooling system that connects the water jacket, such as the cooling passage 1690 that extends through the cover plate 1670. Heat such as water flows through the cooling passage 1690 to remove heat from the cover plate 1670. Coolant connections 1692a, 1692b are connected to the cooling passage 1690 by hoses or tubes. The other end of the coolant links 1692a, 1692b is connected by a hose or tube to a fluid source and a fluid recovery device, such as an internal cooling system or a separate cooling system. Coolant links 1692a, 1692b are coupled to cover plate 1670 by support frame 1694. The liquid flowing through the cooling passage 1690 may include water, oil, ethanol, ethylene glycol, glycol ether, Or other organic solvents. In one embodiment, the temperature of the cover 1670 or chamber cover assembly 1632 can be maintained between about 0 ° C and about 100 ° C, preferably between about 18 ° C and about 65 ° C, more preferably between about 20 ° C and about Between 50 ° C.

17A-17D illustrate a cross section of one embodiment of a processing chamber 1700 that includes a gas delivery system 1730 for an ALD process. The processing chamber 1700 includes a chamber body 1702 having a sidewall 1704 and a bottom 1706. The slit valve 1708 of the processing chamber 1700 can be accessed by a mechanical device (not shown) into and out of the processing chamber 1700 to transfer and retrieve the substrate 1710, such as a 200 mm or 300 mm semiconductor wafer or glass substrate.

The substrate support 1712 supports the substrate 1710 on the substrate receiving surface 1711 in the processing chamber 1700. The substrate support 1712 is provided with an elevation motor 1714 for raising and lowering the substrate support 1712 and the substrate 1710 placed thereon. A lift plate 1716 that connects the lift motor 1718 is disposed within the process chamber 1700 for raising and lowering the lift pins 1720 that are movable through the substrate support 1712. The lift pins 1720 raise and lower the substrate 1710 on the surface of the substrate support 1712. The substrate support 1712 can include a vacuum holder (not shown), an electrostatic chuck (not shown), or a clamp ring (not shown) to secure the substrate 1710 on the substrate support 1712 during the deposition process. .

The temperature of the substrate 1710 placed thereon can be controlled by adjusting the temperature of the substrate support 1712. For example, an embedded heating element such as a resistive heater (not shown) may be used to heat the substrate support 1712, or a radiant heat such as a heat lamp (not shown) disposed above the substrate support 1712 may be used. Heat up. A purge ring 1722 can be placed over the substrate support 1712 to define a purge channel 1724 to provide purge gas to the substrate 1710 to No deposits are deposited on it.

A gas delivery system 1730 is provided in the upper portion of the chamber body 1702 for supplying processing chamber 1700 gas, such as process gases and/or purge gases. The gas delivery system 1730 of Figures 17A-17D can contact the substrate 1710 with at least two gas sources or chemical precursors. In other embodiments, the gas delivery system 1730 can be reconfigured to contact the substrate 1710 with a single gas source (as shown in Figure 5), or with three or more gas sources or chemical precursors (as shown in Figure 6). . Vacuum system 1778 connects suction channel 1779 to discharge any predetermined gas out of process chamber 1700 and assists suction zone 1766 of process chamber 1700 to maintain a predetermined pressure or maintain a predetermined pressure range.

In an embodiment, the gas delivery system 1730 includes a chamber lid assembly 1732 having a gas distribution channel 1734 that extends through a middle portion of the chamber lid assembly 1732. The cover 1772 includes a cylindrical portion of the distribution lane 1734, such as a narrow portion 1754. The cover 1772 also includes a split or enlarged portion of the gas distribution channel 1734, such as the deployment portion 1756. The gas distribution channel 1734 extends from the substrate receiving surface 1711 along the central axis 1733 of the gas distribution channel 1734 through the cover plate 1770 to the lower surface 1760. In one embodiment, a portion of the gas distribution channel 1734 is substantially cylindrical along the central axis 1733 within the upper portion 1737, and a portion of the gas distribution channel 1734 tapers away from the central axis 1733 within the lower portion 1735. Gas distribution channel 1734 extends further across lower surface 1760 into reaction zone 1764. The lower surface 1760 extends from the lower portion 1735 of the gas distribution channel 1734 to the choke 1762. The lower surface 1760 is configured and sized to substantially cover the substrate 1710 on the substrate receiving surface 1711 of the substrate support 1712.

When the process gas in the annular gas stream 1774 travels along the central axis 1733, it will be forced to expand around the central axis 1733 of the gas distribution channel 1734. The annular gas flow 1774 can include a flow pattern, such as a vortex pattern, a spiral pattern, a spiral pattern, a crimp pattern, a twist pattern, a wound pattern, a swirl pattern, or a derivative thereof. The annular gas stream 1774 extends about at least about 1 turn, preferably at least about 1.5 turns, more preferably at least about 2 turns, more preferably at least about 3 turns, and still more preferably at least about 4, about the central axis 1733 of the gas distribution channel 1734. Circle or above.

Gas distribution channel 1734 has gas inlets 1736a, 1736b for providing gas flow from two sets of similar valves 1742a/1752a, 1742b/1752b, which may be provided together or individually. In one configuration, valve 1742a and valve 1742b are coupled to different sources of reactive gas, but are preferably coupled to the same source of purge gas. For example, the valve 1742a is coupled to the reactive gas source 1738, the valve 1742b is coupled to the reactive gas source 1739, and the two valves 1742a, 1742b are coupled to the purge gas source 1740. Valves 1742a, 1742b each include a transfer line 1743a, 1743b having a valve seat assembly 1744a, 1744b, each of which includes an evacuation line 1745a, 1745b having a valve seat assembly 1746a, 1746b. Transfer lines 1743a, 1743b connect reactive gas sources 1738, 1739 and connect gas inlets 1736a, 1736b of gas distribution channel 1734. The valve seat assemblies 1744a, 1744b of the transfer lines 1743a, 1743b control the flow of reactant gases from the reactive gas sources 1738, 1739 to the gas distribution channel 1734. The evacuation lines 1745a, 1745b connect the purge gas source 1740 and intersect the transfer lines 1743a, 1743b downstream of the valve seat assemblies 1744a, 1744b of the transfer lines 1743a, 1743b. Valve seat assembly 1746a for draining lines 1745a, 1745b, 1746b controls the purge gas from the purge gas source 1740 to the gas distribution channel 1734. If the carrier gas is used to transport the reaction gases of the reaction gas sources 1738, 1739, the carrier gas is preferably the same as the purge gas (for example, argon gas is used as the carrier gas and the purge gas).

The valve seat assemblies 1744a, 1744b, 1746a, 1746b can each include a baffle (not shown) and a valve seat (not shown). Applying a bias or starting it can open or close the partition. The partition can be pneumatic or electric. Pneumatic valves include pneumatic valves available from Fujikin and Veriflow. The electric valve includes an electric valve available from Fujikin Corporation. For example, the ALD valve may be a Fujikin model FPR-UDDFAT-21-6.35-PI-ASN or a Fujikin model FPR-NHDT-21-6.35-PA-AYT. The programmable logic controllers 1748a, 1748b are coupled to valves 1742a, 1742b for controlling the spacers of the valve seat assemblies 1744a, 1744b, 1746a, 1746b of the actuating valves 1742a, 1742b. The gas pulse period generated by the pneumatic valve can be 0.020 seconds. The electric valve produces a gas pulse period of 0.005 seconds. Motorized valves typically require a contact valve and a programmable logic controller drive.

Valves 1742a, 1742b, respectively, can be zero dead volume valves that flush the reactant gases of transfer lines 1743a, 1743b when valve seat assemblies 1744a, 1744b are closed. For example, the evacuation lines 1745a, 1745b can be provided with valve seat assemblies 1744a, 1744b that abut the transfer lines 1743a, 1743b. When the valve seat assemblies 1744a, 1744b are closed, the evacuation lines 1745a, 1745b can supply purge gas to flush the transfer lines 1743a, 1743b. In one embodiment, the evacuation lines 1745a, 1745b are slightly spaced from the valve seat assemblies 1744a, 1744b of the transfer lines 1743a, 1743b, such that the purge gas is in the valve seat assembly. When the 1744a, 1744b are opened, they are not directly fed into the valve seat assemblies 1744a, 1744b. The zero invalid volume valve here means that the valve has a negligible invalid volume (ie, the invalid volume is not necessarily zero).

Each set of valves 1742a/1752a, 1742b/1752b can be used to provide a combined gas flow and/or individual gas flow of the reactive gas with the purge gas. Referring to valve 1742a/1752a, an example of a combined gas stream of reactive gas and purge gas includes a continuous purge gas stream from purge gas source 1740 and flowing through evacuation line 1745a and a reaction gas pulse from reaction gas source 1738 and flowing through transfer line 1743a. The purge gas can be continuously supplied by opening the separator of the valve seat assembly 1746a of the evacuation line 1745a. The reactant gas of the reactive gas source 1738 can be pulsed by opening and closing the separator of the valve seat assembly 1744a of the transfer line 1743a. Referring to valves 1742a/1752a, examples of individual gas streams of reactive gas and purge gas include purge gas pulses from purge gas source 1740 and flowing through evacuation line 1745a and reaction gas pulses from reaction gas source 1738 and flowing through transfer line 1743a. The purge gas can be pulsed by opening and closing the separator of the valve seat assembly 1746a of the evacuation line 1745a. The reactant gas of the reactive gas source 1738 can be pulsed by opening and closing the separator of the valve seat assembly 1744a of the transfer line 1743a.

Delivery lines 1743a, 1743b of valves 1742a, 1742b can be connected to gas inlets 1736a, 1736b via gas conduits 1750a, 1750b. Gas conduits 1750a, 1750b can be integral or separate components of valves 1742a, 1742b. In one aspect, valves 1742a, 1742b are in close proximity to gas distribution channel 1734, thus reducing transfer lines 1743a, 1743b and gas conduits 1750a, 1750b at valves 1742a, 1742b and gas inlets 1736a, 1736b Unnecessary configuration volume between.

Unexpectedly limited by theory, the diameter of the salt gas distribution channel 1734 is fixed along the central axis 1733 from the upper portion 1737 of the gas distribution channel 1734 to a particular point and increases from a particular point to the lower portion 1735 of the gas distribution channel 1734. The gas passing through the gas distribution channel 1734 produces less adiabatic expansion which helps control the process gas temperature within the annular gas stream 1774. For example, a sudden adiabatic expansion of the gas entering the gas distribution channel 1734 via the gas inlets 1736a, 1736b will cause the gas temperature to drop, causing the gas to condense to form droplets. On the other hand, the gas distribution channel 1734, which is tapered, allows the gas to generate less adiabatic expansion. Therefore, there is more heat exchange with the gas, so it is easier to control the gas temperature by controlling the ambient temperature of the gas (i.e., controlling the temperature of the chamber cover assembly 1732). The gas distribution channel 1734 can be tapered and can include one or more tapered inner faces, such as tapered flats, concave faces, convex faces, or combinations thereof, or segments that can include one or more tapered inner faces (ie a part is tapered and a part is not tapered).

In an embodiment, gas inlets 1736a, 1736b are adjacent to upper portion 1737 of gas distribution channel 1734. In other embodiments, one or more gas inlets 1736a, 1736b are disposed between the upper portion 1737 and the lower portion 1735 along the entire length of the gas distribution channel 1734.

The centerlines of the gas conduits 1750a, 1750b are respectively at an angle a to the radial line of the gas distribution channel 1734, similar to Figure 17C, wherein the centerlines 1776a, 1776b of the gas conduits 1750a, 1750b are respectively centered through the center of the gas distribution channel 1734. The radial line clamps an angle α. The inlet of the gas inlet gas conduits 1750a, 1750b is preferably set at an inclination angle α (where α > 0 ∘) such that The gas flows in the direction of the ring as indicated by the annular gas stream 1774. Supplying the gas at the angle of inclination α without direct flow to the wall of the enlarged passage (i.e., a = 0 ∘) helps to form a laminar flow rather than turbulent flow through the gas distribution passage 1734. The laminar flow through the gas distribution channel 1734 facilitates removal of the inner face of the gas distribution channel 1734 and other surfaces of the chamber lid assembly 1732. In contrast, turbulence does not flow uniformly through the inner and other surfaces of the gas distribution channel 1734 and may contain dead spots where the gas flow cannot reach. In one aspect, gas conduits 1750a, 1750b and corresponding gas inlets 1736a, 1736b are spaced apart from each other and direct the gas flow in the same annular direction (ie, clockwise or counterclockwise).

Unexpectedly limited by theory, Figure 17C is a cross-sectional view of the gas distribution channel 1734 of the chamber lid assembly 1732, which illustrates the flow of gas therethrough. Although the flow pattern through the gas distribution channel 1734 cannot be known exactly, the ring-shaped annular gas flow 1774 (Fig. 17C) can be vortex flow, spiral flow, spiral flow, swirl flow, fast swirl flow, twist flow, winding flow, tortuous flow. Flow through the gas distribution channel 1734, such as a crimped flow, a vortex flow, or a derivative flow thereof. As shown in Fig. 17C, the annular flow is formed in the "processing zone" rather than the space separating the substrate 1710. In one aspect, the annular flow 1774 facilitates more efficient evacuation of the air distribution channel 1734 as the vortex flow pattern sweeps the entire inner surface of the gas distribution channel 1734.

In one embodiment, the distance 1775 of Figure 17C refers to the surface from the centerlines 1776a, 1776b of the gas conduits 1750a, 1750b to the substrate 1710. Distance 1777 refers to the lower surface 1773 from the upper portion 1737 of the gas distribution channel 1734 to the cover 1172. When it is not expected to spiral over the surface of the substrate 1710, the distances 1775, 1777 are sufficient to dissipate the annular airflow 1774 downward. flow. The salty annular airflow 1774 is a laminar flow that effectively removes the surface of the chamber lid assembly 1732 and substrate 1710. In one embodiment, the distance 1777 is from about 4 inches to about 8 inches, preferably from about 4.5 inches to about 7 inches, more preferably from about 5 inches to about 6 inches, such as 5.5 inches. In another embodiment, the distance 1775 or the gas distribution channel 1734 extends along the central axis 1733 by a length of from about 5 inches to about 12 inches, preferably from about 6 inches to about 10 inches, more preferably about 7 inches to about 9 inches, for example 8 inches.

Referring to Figures 17A and 17C, at least a portion of the lower surface 1760 of the chamber lid assembly 1732 tapers from the gas distribution channel 1734 to the periphery of the chamber lid assembly 1732 to provide gas flow from the gas distribution channel 1734 through the surface of the substrate 1710 (i.e., from the base). The preferred velocity waveform from the center of the material to the edge of the substrate. The lower surface 1760 can include one or more tapered faces, such as a flat surface, a concave surface, a convex surface, or a combination thereof. In one embodiment, the lower surface 1760 is a tapered funnel shape.

In one embodiment, the lower surface 1760 is sloped downward to reduce the difference in speed of the gas-exposed chamber cover assembly 1732 from the lower surface 1760 to the substrate 1710, thereby uniformly contacting the surface of the substrate 1710 with the reactive gas. In one embodiment, the flow cross section between the downwardly inclined lower surface 1760 of the chamber lid assembly 1732 and the surface of the substrate 1710 has a ratio of the largest area to the smallest area of less than 2, preferably less than 1.5, more preferably less than 1.3. It is preferably less than 1.

Without wishing to be bound by theory, the salty gas stream will more uniformly deposit on the substrate 1710 across the surface of the substrate 1710 at a more uniform rate. The salt flow rate is proportional to the gas concentration and is therefore proportional to the rate at which the gas is deposited on the surface of the substrate 1710. Therefore, the first surface area of the substrate 1710 with a relatively high airflow velocity The first surface region has a faster gas deposition rate relative to the second surface region. The chamber cover assembly 1732, which slopes down the lower surface 1760, allows for more uniform deposition of gas over the entire surface of the substrate 1710, since the lower surface 1760 produces a more uniform velocity, so the concentration of gas over the surface of the substrate 1710. More even.

Referring to Figure 17A, a choke 1762 is provided around the chamber cover assembly 1732 adjacent the edge of the substrate 1710. When the chamber cover assembly 1732 is assembled to form a treatment zone around the substrate 1710, the choke 1762 includes any member that restricts gas flow through the region near the edge of the substrate 1710.

In a particular embodiment, the distance between the choke 1762 and the substrate support 1712 is from about 0.04 inches to about 2.0 inches, preferably from about 0.04 inches to about 0.2 inches. The spacing can vary depending on the delivery gas and deposition process conditions. By using the choke 1762 to separate the pressure uneven distribution regions of the reaction zone 1764 and the suction zone 1766, the volume distribution between the chamber cover assembly 1732 and the substrate 1710 or the pressure distribution within the reaction zone 1764 can be more uniform.

Referring to Fig. 17A, in one aspect, since the reaction zone 1764 and the suction zone 1766 have been separated, the reaction gas or purge gas only needs to be appropriately filled in the reaction zone 1764 to allow the substrate 1710 to sufficiently contact the reaction gas or purge gas. In conventional chemical vapor deposition, conventional chambers need to simultaneously and uniformly supply a combined gas flow of a reactive gas to the entire surface of the substrate to ensure that the reaction gases uniformly react with each other across the surface of the substrate 1710. In the atomic layer deposition, the processing chamber 1700 successively introduces a reaction gas to the surface of the substrate 1710, so that a thin layer of the reactant is alternately adsorbed on the surface of the substrate 1710. Therefore, the atomic layer deposition does not require a reaction gas to reach the surface of the substrate 1710 at the same time. Instead, it is necessary to supply a sufficient amount of reactive gas. A thin layer of reactant is adsorbed onto the surface of the substrate 1710.

Since the volume of the reaction zone 1764 is smaller than the internal volume of a conventional CVD chamber, less gas is required to fill the reaction zone 1764 for the particular process of the atomic layer deposition process. For example, in the case of a chamber embodiment for treating a substrate having a diameter of 200 mm, the volume of the reaction zone 1764 is about 1000 cm ³ or less, preferably about 500 cm ³ or less, more preferably about 200 cm ³ or less. For example, a chamber embodiment for treating a substrate having a diameter of 300 mm has a volume of about 3000 cm ³ or less, preferably about 1500 cm ³ or less, more preferably about 600 cm ³ or less. In an embodiment, the substrate support 1712 can be raised or lowered to adjust the volume of the reaction zone 1764 for deposition. The smaller the volume of the reaction zone 1764, the less the amount of deposition gas or purge gas that needs to flow into the processing chamber 1700. Due to the reduced gas consumption, it can increase the capacity of the processing chamber 1700 and reduce waste, thereby reducing operating costs.

As shown in Figures 17A-17D, the lid assembly 1732 includes a cover 1772 and a cover 1770, wherein the cover 1772 and the cover 1770 constitute a gas distribution channel 1734. An additional plate (not shown) may be placed between the cover 1770 and the cover 1772. The additional plates are used to adjust (e.g., enlarge) the spacing of the cover 1772 from the cover 1770, thereby varying the length of the gas distribution channel 1734 that is constructed. In another embodiment, the additional plate selectively placed between the cover 1770 and the cover 1772 contains stainless steel. In other embodiments, the gas distribution channel 1734 can be comprised of a single material.

Depending on the gas to be delivered, the chamber lid assembly 1732 can include a cooling element and/or a heating element. The temperature of the control chamber cover assembly 1732 prevents gases from decomposing, depositing, or condensing on the chamber lid assembly 1732. For example, waterways (such as A cooling passage 1690 of Figure 16A may be provided in the chamber cover assembly 1732 for cooling the chamber lid assembly 1732. In another embodiment, a heating element (not shown) can be a component that is embedded or surrounds the chamber lid assembly 1732 for heating the chamber lid assembly 1732. In an embodiment, the parts of the chamber lid assembly 1732 can be separately heated or cooled. For example, referring to FIG. 17A, the chamber cover assembly 1732 includes a cover plate 1770 and a cover 1772, wherein the cover plate 1770 and the cover 1772 constitute a gas distribution channel 1734. The cover 1772 is maintained within a temperature range and the cover 1770 is maintained within another temperature range. For example, heating the cover 1772 with a heating tape or using other heating means prevents condensation of the reactive gas and the cover 1770 is maintained at ambient temperature. In another embodiment, the cover 1772 can be heated and the cover 1770 can be cooled using a waterway to prevent thermal decomposition of the reactive gases on the cover 1770.

The lid assembly 1732 can comprise a component that can be comprised of stainless steel, aluminum, nickel plated aluminum, nickel, alloys thereof, or other suitable materials. In an embodiment, the cover 1772 and the cover 1770 are each fabricated, machined, forged, or they may be comprised of a metal, such as aluminum, aluminum alloy, steel, stainless steel, alloys thereof, or combinations thereof.

The control unit 1780, such as a programmable PC or workstation computer, is coupled to the processing chamber 1700 for controlling process conditions. For example, in various stages of the substrate processing procedure, control unit 1780 is used to control process gases and purge gases from respective gas sources 1738, 1739, 1740 to flow through valves 1742a, 1742b. For example, the control unit 1780 includes a central processing unit (CPU) 1782, a support circuit 1784, and a memory 1786 in which the associated control software 1783 is stored.

Control unit 1780 can be any type of general purpose computer processor that can be used in industrial settings to control various chambers and sub-processors. The CPU 1782 can use any suitable memory 1786, such as a random access memory, a read only memory, a floppy disk drive, a hard disk drive, or other near or far end digital storage. Various support circuits can be connected to the CPU 1782 to support the processing chamber 1700. Control unit 1780 can be coupled to another controller adjacent to the individual chamber components, such as programmable logic controllers 1748a, 1748b of valves 1742a, 1742b. Bidirectional communication with control unit 1780 and other components of processing chamber 1700 is operable through a plurality of signal lines (hereinafter collectively referred to as signal bus 1788, partially depicted in FIG. 17A). In addition to the programmable gas controllers 1748a, 1748b that control the process gases of the gas sources 1738, 1739, 1740 and the purge gases and valves 1742a, 1742b, the control unit 1780 is also responsible for automatically controlling other wafer processing operations, such as transferring wafers. , control of temperature, evacuation chamber, etc., part of which will be described elsewhere.

Referring to Figures 17A-17D, in operation, a mechanical device (not shown) transfers substrate 1710 to processing chamber 1700 via slit valve 1708. The lift pins 1720 cooperate with the mechanical device to place the substrate 1710 onto the substrate support 1712. The substrate support 1712 lifts the substrate 1710 against the lower surface 1760 of the chamber lid assembly 1732. Together or individually (i.e., pulsed), a first gas stream is injected into the gas distribution channel 1734 of the processing chamber 1700 using a valve 1742a and a second gas stream is injected into the processing chamber 1700 using a valve 1742b. The first gas stream may comprise a continuously supplied purge gas from purge gas source 1740 and a pulsed supply of reaction gas from reaction gas source 1738, or may include a pulsed supply of reactant gas from reaction gas source 1738 and from purge gas source 1740. Pulse supply The purified gas should be. The second gas stream may comprise a continuously supplied purge gas from purge gas source 1740 and a pulsed supply of reaction gas from reaction gas source 1739, or may include a pulsed supply of reactant gas from reaction gas source 1739 and from purge gas source 1740. Pulsed supply of purge gas. The annular flow 1774 flows through the gas distribution passage 1734 in a vortex flow manner to sweep the entire inner surface of the gas distribution passage 1734. The annular gas stream 1774 dissipates downward toward the surface of the substrate 1710. As the gas flows through the gas distribution channel 1734, the gas flow rate will slow down. The gas stream then flows through the surface of the substrate 1710 and the lower surface 1760 of the lid assembly 1732. The downwardly sloping lower surface 1760 of the chamber lid assembly 1732 helps to reduce the difference in speed of airflow across the surface of the substrate 1710. The gas stream then flows through the choke valve 1762 into the suction zone 1766 of the processing chamber 1700. Excess gas, by-products, etc. will flow into the suction channel 1779 and then exit the processing chamber 1700 by the vacuum system 1778. In one aspect, the gas stream flows in a laminar flow between the gas distribution channel 1734 and the surface of the substrate 1710 and the lower surface 1760 of the chamber lid assembly 1732, such that the reactive gas uniformly contacts the surface of the substrate 1710 and effectively removes the chamber lid assembly. The inside of the 1732.

The processing chamber 1700 of Figures 17A-17D has a number of features. In one aspect, the processing chamber 1700 provides a reaction zone 1764 volume that is smaller than a conventional CVD chamber. The processing chamber 1700 requires less reactive or purge gas to fill the reaction zone 1764 for a particular process. In another aspect, the chamber cover assembly 1732 provided by the processing chamber 1700 has a downwardly sloping or funnel-shaped lower surface 1760 that reduces the difference in speed of the gas venting chamber cover assembly 1732 from the bottom surface to the substrate 1710. In yet another aspect, the gas distribution channel 1734 provided by the processing chamber 1700 can slow the flow of airflow. In another aspect The gas conduit provided by the processing chamber 1700 is at an angle a to the center of the gas distribution channel 1734. Processing chamber 1700 has other features. Other chamber embodiments for atomic layer deposition include one or more of the above features.

In some embodiments, the gas distribution channel 1734 within the processing chamber 1700 has a roughened surface or a mechanically treated surface to increase the surface area of the entire surface. The roughened surface allows the undesired buildup material to adhere more readily to the inner face 1790 of the cover 1772 and the lower surface 1760 of the cover 1770. The vapor deposition process often produces an undesired film layer and may peel off the inner surface 1790 and the lower surface 1760 to contaminate the substrate 1710.

In another embodiment, first as shown in FIG. 17D, a plurality of under surface of the cover and the inner surface 1772 of cover 1770 1790,1792 on the surface of the region R to R _{10 17,601} Room constituting the roughened surface gradient. For example, were thin portion 1754 of the cover 1772 comprises an inner surface 1790, and in the region of R ₁ to R ₂ rooms. Expanded portion 1772 of the cover 1756 comprises an inner surface 1792, and in the region of R ₃ to R ₈ rooms. Further, the lower cover 1758 comprises a lower surface 1770 of 1760, and in the region of R ₉ to R ₁₀ rooms.

In one embodiment, the narrow portion 1754 of the cover 1772 includes an inner face 1790 having an average roughness (R _a ) of at least about 10 μin (about 0.254 μm), such as from about 10 μin (about 0.254 μm) to about 50 μin ( About 1.27 μm), preferably about 20 μin (about 0.508 μm) to about 45 μin (about 1.143 μm), more preferably about 30 μin (about 0.762 μm) to about 40 μin (about 1.016 μm). The flared portion 1756 of the cover 1772 includes an inner face 1792 having an average roughness of at least about 35 μin (about 0.89 μm), such as from about 35 μin (about 0.89 μm) to about 70 μin (about 1.78 μm), preferably about 40 μin ( From about 1.016 μm) to about 65 μin (about 1.65 μm), more preferably from about 45 μin (about 1.143 μm) to about 60 μin (about 1.52 μm). The lower portion 1758 of the cover plate 1770 includes a lower surface 1760 having an average roughness of at least about 35 μin (about 0.89 μm), such as from about 35 μin (about 0.89 μm) to about 70 μin (about 1.78 μm), preferably about 40 μin (about 1.016 μm) to about 65 μin (about 1.65 μm), more preferably about 45 μin (about 1.143 μm) to about 60 μin (about 1.52 μm).

In one embodiment, the narrow portion 1754 of the cover 1772 includes a region R ₁ having an inner surface 1790 having _{a Ra of} from about 32 μin to about 36 μin, for example about 34 μin, and an inner surface 1790 of the region R ₂ having _{a Ra} of about 34 μin. To about 42 μin, for example about 38 μin. Cover deployment portion 1772 of 1756 containing region R _3, the inner surface 1792 of R _a is from about 40μin about 50μin, e.g. about 45μin, region R ₄ of the inner surface 1790 of R _a is from about 44μin about 60μin, for example about 51μin , region R ₅ of the inner surface 1792 of R _a is from about 48μin about 68μin, e.g. about 58μin, the inner surface area R ₆ of 1790 R _a is from about 46μin about 64μin, e.g. about 55μin, region R ₇ of the inner surface 1792 the R _a is from about to about 48μin 68μin, e.g. about 57μin, the region R of the inner surface ₈ of R _a is from about 1790 to about 48μin 68μin, for example about 57μin. And, under the cover portion 1758 comprises a region 1770 R _9, the lower surface of R _a is from about 1760 to about 46μin 64μin, e.g. about 55μin, R _a R & lt region ₁₀ below the surface was about 1760 to about 46μin 64μin, e.g. About 55μin.

18A-18H illustrate a cross section of a chamber cover for an ALD process in accordance with another embodiment. The gas delivery assemblies 1800a, 1800c, 1800e, 1800g facilitate the ALD process and can be combined with other embodiments, such as incorporating the processing with gas delivery systems 230, 830, 930 of Figures 1-8. Chamber cover assemblies 1032, 1232, 1632, and process chambers 1100, 1500, 1700 as described in chambers 200, 800, 900, or 10A-17D.

In one embodiment, the gas delivery assembly 1800a illustrated in FIGS. 18A-18B includes a primary gas conduit 1864 that is coupled and in fluid communication with the gas inlet 1862. The gas inlet 1862 is placed axially above the gas distribution channel 1828 that extends to the processing zone of the deposition chamber. The main gas conduit 1864 is connected to the gas inlet at an angle of 90 degrees (as shown in Figures 18A-18B) or greater than or less than 90 degrees (not shown). Gas conduits 1866a, 1866b, 1866c are coupled and in fluid communication with main gas conduit 1864. The gas conduits 1866a, 1866b, 1866c are each coupled to at least one gas source, such as a precursor gas source, a process gas source, a carrier gas source, or a purge gas source. Gas from the gas source flows through gas conduits 1866a, 1866b, 1866c and into main gas conduit 1864. If the gas flows simultaneously from the gas conduits 1866a, 1866b, 1866c, the gas can meet at a particular point 1830a. Gas then flows into gas distribution channel 1828 via gas inlet 1862.

In another embodiment, the gas delivery assembly 1800c illustrated in Figures 18C-18D is similar to the configuration of the gas delivery assembly 1800a, but which does not include the primary gas conduit 1864. The gas delivery assembly 1800c includes a gas inlet 1862 axially disposed above the gas distribution channel 1828 that expands toward the processing zone of the deposition chamber. Gas conduits 1868a, 1868b, 1868c are directly coupled and in fluid communication with gas inlet 1862. The gas inlet 1862 is connected to the gas conduits 1868a, 1868b at an angle of 90 degrees (as shown in Figures 18B-18C) or greater than or less than 90 degrees (not shown). The gas conduits 1868a, 1868b, and 1868c are respectively connected to at least one gas source, such as a precursor gas source, a process gas source, a carrier gas source, Or purify the gas source. If the gas flows simultaneously from the gas conduits 1868a, 1868b, 1868c, the gas can meet at a particular point 1830c directly above the gas inlet 1862. Gas then flows into gas distribution channel 1828 via gas inlet 1862.

In yet another embodiment, the gas delivery assembly 1800e illustrated in Figures 18E-18F is similar to the configuration of the gas delivery assembly 1800c, but which does not include a gas conduit. The gas delivery assembly 1800e includes a gas inlet 1862 axially disposed above the gas distribution channel 1828 that expands toward the processing zone of the deposition chamber. Gas conduits 1870a, 1870b are directly coupled and in fluid communication with gas inlet 1862. In one embodiment, the angle of attachment of gas inlet 1862 to gas conduits 1870a, 1870b is less than 90 degrees from the central axis of gas distribution passage 1828, such as from about 10 degrees to about 85 degrees, preferably about 20 degrees to About 75 degrees, more preferably from about 30 degrees to about 60 degrees, such as about 45 degrees. The gas conduits 1870a, 1870b are respectively coupled to at least one gas source, such as a precursor gas source, a process gas source, a carrier gas source, or a purge gas source. If the gas flows simultaneously from the gas conduits 1870a, 1870b, the gas can meet at a particular point 1830e directly above the gas inlet 1862 and then into the gas distribution channel 1828.

18G-18H illustrate a gas delivery assembly 1800g in accordance with yet another embodiment. The gas delivery assembly 1800g includes a gas inlet 1862 axially disposed above the gas distribution channel 1828 that expands toward the processing zone of the deposition chamber. Gas conduits 1872a, 1872b are directly coupled and in fluid communication with gas inlet 1862. In one embodiment, the angle of attachment of the gas inlet 1862 to the gas conduits 1872a, 1872b is about 90 degrees from the central axis of the gas distribution channel 1828 (as shown in Figures 18G-18H). Alternatively, the connection angle of the gas conduits 1872a, 1872b to the gas inlet 1862 is greater than or less than 90 degrees (not drawn Show). Baffles 1800a, 1800b are disposed in the gas flow paths of gas conduits 1872a, 1872b to direct the gas flow paths toward each other and/or upward. The gas conduits 1872a, 1872b are respectively coupled to at least one gas source, such as a precursor gas source, a process gas source, a carrier gas source, or a purge gas source. If gas flows simultaneously from the gas conduits 1872a, 1872b, the gas can meet at a particular point 1830g directly above the baffles 1800a, 1800b at the gas inlet 1862. The process gas then flows into gas distribution channel 1828.

As used herein, "atomic layer deposition (ALD)", "circular deposition", or "circular layer deposition" refers to the sequential introduction of two or more reactive compounds to deposit a layer of material onto the surface of a substrate. Two, three or more reactive compounds or may be introduced into the reaction zone or treatment zone of the processing chamber. The form of the reactive compound can be a gas, a plasma, a vapor, a fluid, or other material state that can be used in a vapor deposition process. The reaction compounds are typically separated by a time delay to allow the compound to adhere to and/or react on the surface of the substrate. In one aspect, after the pulse is supplied to the first precursor or compound A to the reaction zone, a first time delay is performed. Next, a second precursor or compound B is pulsed to the reaction zone and then a second time delay is performed. Compound A reacts with Compound B to form a deposition material. During the time delay, a purge gas is introduced into the treatment chamber to evacuate the reaction zone or remove any residual reaction compounds or by-products from the reaction zone. Alternatively, the purge gas may continue to flow throughout the deposition process such that during the time delay between the supply of the reactive compounds by each pulse, only the purge gas flows in. The reactive compound or material that can be pulsedly supplied until a predetermined film thickness is deposited on the surface of the substrate. In either case, the ALD process of pulse supplying compound A, supplying purge gas, supplying compound B, and supplying purge gas is one cycle. Each The cycle may be followed by introduction of Compound A or Compound B, and the steps of the cycle are continued until the film reaches a predetermined thickness. In another embodiment, the first precursor containing Compound A, the second precursor containing Compound B, and the third precursor containing Compound C are individually pulsed to the processing chamber. Alternatively, the time during which the pulse supplies the first precursor may overlap with the time at which the pulse supplies the second precursor, and the time at which the pulse supplies the third precursor does not overlap with the time at which the pulse supplies the first or second precursor. By "process gas" herein is meant a mixture of a single gas, a plurality of gases, a gas containing a plasma, a gas, and/or a plasma. The process gas contains at least one reactive compound for the vapor deposition process. The form of the reactive compound can be a gas, a plasma, a vapor, a fluid, or other material state that can be used in a vapor deposition process. Also, the process may include a purge gas or a carrier gas, but no reactive compound.

By "substrate" or "substrate surface" herein is meant any substrate on which the film treatment is performed or the surface of the material thereon. For example, depending on the type of application, the surface of the substrate to be treated includes, for example, tantalum, yttria, strain enthalpy, silicon on insulator (SOI), carbon doped yttrium oxide, tantalum nitride, doping Materials such as tantalum, niobium, gallium arsenide, glass, graphite, quartz, etc., and other materials depending on the type of application, such as metals, metal nitrides, metal alloys, and other conductive materials. The barrier layer, metal, or metal nitride on the surface of the substrate includes titanium, titanium nitride, titanium oxynitride, tungsten, tungsten nitride, tungsten oxynitride, tantalum, tantalum nitride, or hafnium hydride. The substrate can be of any size, such as a 200 mm or 300 mm wafer, and a rectangular or square glass substrate. Substrates include semiconductor substrates, display substrates (eg, LCDs), solar panels, and other types of substrates. The embodiment and the norm are unless otherwise indicated The example is preferably implemented on a substrate having a size of 200 mm or 300 mm, more preferably 300 mm. Substrates that can be used in embodiments of the present invention include semiconductor wafers such as crystalline germanium (eg, Si<100> or Si<111>), hafnium oxide, glass, quartz, strained germanium, germanium, doped or undoped. Polycrystalline germanium, doped or undoped germanium wafers, and patterned or unpatterned wafers are not limited thereto. The substrate can be subjected to a pretreatment process whereby the substrate surface is ground, etched, reduced, oxidized, oxidized, annealed, and/or baked.

While the present invention has been described above by way of a preferred embodiment, it is not intended to limit the invention, and the present invention may be modified and modified without departing from the spirit and scope of the invention. The scope of protection is subject to the definition of the scope of the patent application.

200, 800, 900, 1100, 1500, 1700 ‧ ‧ processing room

202, 1102, 1502, 1702‧‧

204, 1104, 1504, 1704‧‧‧ side walls

206, 1106, 1506, 1706‧‧‧ bottom

208, 1108, 1508, 1708‧‧‧ slit valve

210, 1010, 1110, 1210, 1510, 1610, 1710‧‧‧ substrates

211, 1111, 1511, 1711‧‧‧

212, 1112, 1512, 1712‧‧‧ support

214, 218, 1114, 1118, 1514, 1518, 1714, 1718‧ ‧ motor

216, 1116, 1516, 1716‧‧‧ lifting plates

220, 1120, 1520, 1720‧‧ ‧ lift pins

222, 1122, 1522, 1722‧‧‧ Purification ring

224, 234, 634, 734, 834, 933, 1124, 1268a, 1268b, 1524, 1634, 1668a, 1668b, 1724‧‧ channels

230, 830, 930‧‧‧ gas delivery system / gas delivery equipment

232, 832, 932, 1032, 1132, 1232, 1532, 1632, 1732 ‧ ‧ room cover assembly

235, 1035, 1135, 1235, 1535, 1635, 1735, 1758‧‧‧ lower

236a, 236b, 636, 736A, 736B, 736C, 1038a, 1038b, 1136a, 1136b, 1536a, 1536b, 1638a, 1638b, 1736a, 1736b, 1862‧‧

237, 1037, 1137, 1237, 1537, 1637, 1737‧‧‧ upper

238, 239, 240, 937, 1138, 1139, 1140, 1538, 1539, 1540, 1738, 1739, 1740 ‧ ‧ gas source

242a, 242b, 252a, 252b, 941, 1142a, 1142b, 1152a, 1152b, 1542a, 1542b, 1552a, 1552b, 1742a, 1742b, 1752a, 1752b‧‧‧ valves

243a, 243b, 245a, 245b, 1143a, 1143b, 1145a, 1145b, 1543a, 1543b, 1545a, 1545b, 1743a, 1743b, 1745a, 1745b‧‧ ‧ pipeline

244a, 244b, 246a, 246b, 1144a, 1144b, 1146a, 1146b, 1544a, 1544b, 1546a, 1546b, 1744a, 1744b, 1746a, 1746b‧‧‧ valve seat assembly

248a, 248b, 1148a, 1148b, 1548a, 1548b, 1748a, 1748b‧‧‧ controller

250a, 250b, 650, 750a, 750b, 750c, 1050a, 1050b, 1050c, 1068a, 1068b, 1150a, 1150b, 1250a, 1250b, 1250c, 1550a, 1550b, 1650a, 1650b, 1650c, 1750a, 1750b, 1864, 1866a, 1866b, 1866c, 1868a, 1868b, 1868c, 1870a, 1870b, 1872a, 1872b‧‧‧ catheter

260, 860, 960, 1060, 1160, 1173, 1260, 1560, 1660, 1760, 1773‧‧‧ surface

261, 1035a, 1035b, 1035c, 1231, 1531, 1631, 1790, 1792‧‧

262, 1062, 1162, 1262, 1562, 1662, 1762‧‧ ‧ choke

264, 864, 964, 1064, 1164, 1564, 1764‧‧‧ reaction zone

266, 1166, 1566, 1766‧‧‧ suction zone

267‧‧‧lateral side

268, 1261‧‧ ‧ protruding parts

270, 1070, 1170, 1270, 1570, 1670, 1770‧‧ ‧ cover

272, 1072, 1172, 1272, 1572, 1672, 1772‧‧

278, 1178, 1578, 1778‧‧‧ vacuum system

279, 1179, 1579, 1779‧‧ ‧ suction channel

280, 1180, 1580, 1780‧‧‧ control unit

282, 1182, 1582, 1782‧‧‧ central processing unit / CPU

283, 1183, 1583, 1783‧‧‧ control software

284, 1184, 1584, 1784‧‧‧ support circuits

286, 1186, 1586, 1786‧‧‧ memory

288, 1188, 1588, 1788‧‧ ‧ busbars

290‧‧‧ vertical axis

302a, 302b, 602, 702, 1176a, 1176b, 1776a, 1776b‧‧‧ centerline

304, 604, 704‧‧‧ spoke line

310‧‧‧Circular flow

310a, 310b, 402a, 402b, 610, 710‧‧ arrows

402‧‧‧ eddy current

404‧‧‧ Flow

Distance from 410, 1175, 1177a, 1177b, 1575, 1775, 1777‧‧

502, 504, 1576a, 1576b‧‧‧ position

1020, 1174, 1220, 1574, 1620, 1774‧‧‧ airflow

1028, 1128, 1228, 1534, 1628, 1734, 1828‧‧

1033, 1133, 1233, 1533, 1633, 1733‧‧‧ center axis

1034a, 1134a‧‧

1034b, 1134b‧‧ ‧ split runner

1036, 1131‧‧  throttle

1052, 1252, 1652‧‧‧ catheter sleeve

1074, 1274, 1275, 1674‧‧‧ trenches

1076, 1265, 1276, 1277, 1676‧‧ sales

1080, 1280, 1680‧‧ ‧ room cover

1082, 1282, 1682‧‧‧Handles

1090, 1290, 1690‧‧‧ cooling channels

1092a, 1092b, 1292a, 1292b, 1692a, 1692b‧‧‧ links

1094, 1294, 1694‧‧‧ support frame

1130, 1530, 1730‧‧‧ gas delivery system

1236, 1636, 1830a, 1830c, 1830e, 1830g‧‧‧ specific points

1263‧‧‧ hole

1264a, 1264b, 1568a, 1568b‧‧‧ ring

1266a, 1266b, 1569a, 1569b‧‧‧ slits

1267‧‧‧Multiple injection hood

1269‧‧‧Multiple injection substrate

1754‧‧‧Slightly narrow

1756‧‧‧Department

1800a, 1800c, 1800e, 1800g‧‧‧ gas delivery components

1880a, 1880b‧‧ ‧ baffle

‧‧‧‧ angle

In order to make the above-mentioned features of the present invention more obvious and understandable, it can be explained with reference to the reference embodiment, and a part thereof is illustrated as a drawing.

It is to be understood that the specific embodiments of the invention are not to be construed as limiting the scope of the invention. .

1 is a cross-sectional view of a processing chamber according to an embodiment, including a gas delivery device for atomic layer deposition; FIG. 2 is a cross-sectional view of the enlarged channel of the first chamber cover; FIG. 3 is a first The cross section of the enlarged passage of the chamber cover; the cross section of Fig. 4 shows the flow of gas at two different positions between the surface of the substrate and the bottom surface of the first cover; Figure 5 illustrates an upper cross-section of an enlarged channel for receiving a single airflow in accordance with an embodiment; and Figure 6 illustrates an upper cross-section of an enlarged channel for receiving three airflows in accordance with an embodiment; A cross-section of a processing chamber according to another embodiment, including a gas delivery device for atomic layer deposition; and FIG. 8 is a cross-sectional view of a processing chamber according to still another embodiment, including gas transport for atomic layer deposition 9A-9B illustrates a cross section of a chamber cover choke according to other embodiments; and FIGS. 10A-10F illustrate a cross section of a process chamber cover assembly for atomic layer deposition according to still another embodiment; -11C illustrates a cross section of a processing chamber according to another embodiment, including an upper cover assembly and a gas delivery device for atomic layer deposition; and FIGS. 12A-12E illustrate a method for atomic layer deposition according to another embodiment. Processing the chamber cover assembly section; FIGS. 13A-13C illustrate other sections of the process chamber cover assembly according to the 12A-12E embodiment of the embodiment; and FIGS. 14A-14C illustrate the gas injection assembly according to an embodiment. Section and treatment chamber cover of Figure 12A-13C 15A-15C is a cross section of a processing chamber according to still another embodiment, including an upper cover assembly and a gas delivery device for atomic layer deposition; and FIGS. 16A-16E are diagrams according to still another embodiment a cross section of a process chamber cover assembly for atomic layer deposition; 17A-17D illustrate a cross section of a processing chamber according to still another embodiment, including an upper cover assembly and a gas delivery device for atomic layer deposition; and FIGS. 18A-18H illustrate an atom for use according to another embodiment. A section of the cover of the layer deposition.

1100‧‧‧Processing room

1102‧‧‧ chamber body

1104‧‧‧ side wall

1106‧‧‧ bottom

1108‧‧‧Slit valve

1110‧‧‧Substrate

1111‧‧‧ receiving surface

1112‧‧‧Support

1114, 1118‧‧ ‧ motor

1116‧‧‧ lifting plate

1120‧‧‧lifting pin

1122‧‧‧ Purification ring

1124‧‧‧ channel

1128‧‧‧Distribution Road

1130‧‧‧ gas delivery system

1132‧‧‧room cover assembly

1134a‧‧ ‧ Confluence channel

1134b‧‧ ‧Distribution

1135‧‧‧ lower

1136a, 1136b‧‧‧ entrance

1137‧‧‧ upper

1138, 1139, 1140‧‧‧ gas source

1142a, 1142b‧‧‧ valve

1143a, 1143b‧‧‧ pipeline

1144a, 1144b‧‧‧ seat assembly

1145a, 1145b‧‧‧ pipeline

1144b, 1146a‧‧‧ seat assembly

1148a, 1148b‧‧‧ controller

1150a, 1150b‧‧‧ catheter

1152a, 1152b‧‧‧ valve

1160‧‧‧ surface

1162‧‧‧Stems

1164‧‧‧Reaction zone

1170‧‧‧ cover

1172‧‧‧ Cover

1178‧‧‧ Vacuum system

1179‧‧ ‧ suction channel

1180‧‧‧Control unit

1182‧‧‧Central Processing Unit/CPU

1183‧‧‧Control software

1184‧‧‧Support circuit

1186‧‧‧ memory

1188‧‧‧ busbar

Claims (53)

A chamber for treating a substrate, comprising: at least: a substrate support comprising a substrate receiving surface; and a chamber cover assembly comprising: a gas distribution channel in an intermediate portion of the chamber cover assembly, Wherein a confluence portion of the gas distribution channel is tapered toward a central axis of the gas distribution channel, and a diverting portion of the gas distribution channel is tapered away from the central axis; a conical bottom surface from the gas distribution channel The shunt portion extends to a peripheral portion of the chamber cover assembly, wherein the tapered bottom surface is configured and sized to substantially cover the substrate receiving surface; a first conduit coupled to the gas distribution channel a first gas inlet in the confluence portion; and a second conduit coupled to a second gas inlet of the confluence portion of the gas distribution passage, wherein the first conduit and the second conduit are configured to provide An annular flow pattern of the gas distribution passage. The chamber of claim 1, wherein the first conduit and the second conduit are independently disposed to direct a gas at an inner surface of one of the confluence portions of the gas distribution passage. The chamber of claim 2, wherein the annular airflow pattern comprises a flow pattern selected from the group consisting of a vortex, a spiral, and a disk. A group of spins, curls, twists, wraps, vortices, and derived patterns. The chamber of claim 3, wherein the annular flow pattern extends at least about 1.5 turns around the central axis of the gas distribution channel. The chamber of claim 4, wherein the annular flow pattern extends at least about 4 turns around the central axis of the gas distribution channel. The chamber of claim 1, wherein a first valve is coupled to the first conduit, a second valve is coupled to the second conduit, a first gas source and the first valve In fluid communication, a second source of gas is in fluid communication with the second valve. The chamber of claim 6, wherein the first valve and the second valve allow a pulse time of an atomic layer deposition process to be about 2 seconds or less. The chamber of claim 7, wherein the pulse time is from about 0.05 seconds to about 0.5 seconds. The chamber of claim 1, wherein the first conduit and the second conduit are each independently disposed to be inclined by more than 0 degrees from the central axis of the gas distribution passage. The chamber of claim 9, wherein the annular air flow pattern comprises a flow pattern selected from the group consisting of eddy current, spiral, spiral, curl, twist, winding, eddy, and derivative patterns thereof. Group of. The chamber of claim 1, further comprising a reaction zone having a volume of about 3000 cubic centimeters or less, and the reaction zone is defined between the tapered bottom surface and the substrate receiving surface. The chamber of claim 11, wherein the volume is about 1500 cubic centimeters or less. The chamber of claim 12, wherein the volume is about 600 cubic centimeters or less. A chamber for processing a substrate, comprising: at least: a substrate support having a substrate receiving surface; and a chamber cover assembly comprising: a gas distribution channel located in an intermediate portion of the chamber cover assembly, Wherein a confluence portion of the gas distribution channel is tapered toward a central axis of the gas distribution channel, and a diverting portion of the gas distribution channel is tapered away from the central axis; a first conduit coupled to a first gas inlet of the confluence portion of the gas distribution passage; a second conduit coupled to a second gas inlet of the confluence portion of the gas distribution passage, wherein the The first conduit and the second conduit are configured to provide an annular airflow pattern; and a first valve coupled to the first conduit and a second valve coupled to the second conduit, wherein the first valve And the second valve can cause a pulse time of an atomic layer deposition process to be about 2 seconds or less. The chamber of claim 14, wherein the chamber cover assembly further comprises a tapered bottom surface extending from the diverting portion of the gas distribution passage to a peripheral portion of the chamber lid assembly. The chamber of claim 15 wherein the tapered bottom surface is configured and sized to substantially cover the substrate receiving surface. The chamber of claim 14, wherein the pulse time is about 1 second or less. The chamber of claim 17, wherein the pulse time is from about 0.05 seconds to about 0.5 seconds. The chamber of claim 14, wherein a first gas source is in fluid communication with the first valve, and a second gas source and the second valve are The first conduit and the second conduit are each independently disposed to direct a gas at an inner face of one of the confluence portions of the gas distribution passage. The chamber of claim 19, wherein the annular air flow pattern comprises a flow pattern selected from the group consisting of eddy current, spiral, spiral, curl, twist, winding, eddy, and derivative patterns thereof. Group of. The chamber of claim 20, wherein the annular flow pattern extends at least about 1.5 turns around the central axis of the gas distribution channel. The chamber of claim 21, wherein the annular flow pattern extends at least about 4 turns around the central axis of the gas distribution channel. The chamber of claim 14, wherein the first conduit and the second conduit are each independently disposed and inclined from the central axis of the gas distribution channel by more than 0 degrees. The chamber of claim 15 further comprising a reaction zone having a volume of about 3000 cubic centimeters or less, and the reaction zone is defined between the tapered bottom surface and the substrate receiving surface. A method of depositing a material onto a substrate, the method comprising: placing a substrate on a substrate support in a processing chamber, and processing The chamber includes a chamber body and a chamber cover assembly, wherein the chamber cover assembly includes: a gas distribution passage located at an intermediate portion of the chamber cover assembly, wherein a confluence portion of the gas distribution passage is coupled to the gas distribution passage The central axis tapers, a diverting portion of the gas distribution channel is tapered away from the central axis; a conical bottom surface extending from the diverting portion of the gas distribution channel to a surrounding portion of the chamber cover assembly, wherein The tapered bottom surface is configured and sized to substantially cover the substrate; a first conduit coupled to a first gas inlet in the confluence portion of the gas distribution passage; and a second conduit coupled to the second conduit a second gas inlet in the confluence portion of the gas distribution channel, wherein the first conduit and the second conduit are configured to form an annular gas flow pattern; at least one carrier gas flow through the first conduit and the second a conduit to form an annular flow gas; exposing the substrate to the annular flow gas; pulse introducing at least one precursor into the annular flow gas; and depositing a material onto the substrate, the material comprising at least one source The element of the at least one precursor. The method of claim 25, wherein the annular flow gas comprises a flow pattern selected from the group consisting of eddy currents, spirals, spirals, curls, twists, wraps, eddies, and derived patterns thereof. group group. The method of claim 26, wherein the flow pattern extends at least about 1.5 turns around the central axis of the gas distribution channel. The method of claim 27, wherein the flow pattern extends at least about 4 turns around the central axis of the gas distribution channel. The method of claim 25, wherein the step of introducing the at least one precursor into the annular flowing gas further comprises supplying at least two chemical precursors to at least one pulse during the atomic layer deposition process. In a carrier gas. The method of claim 25, wherein the volume is adjusted by laterally positioning the substrate support. A chamber for processing a substrate, comprising: at least: a substrate support comprising a substrate receiving surface; and a chamber cover assembly comprising: an enlarged channel extending along a central axis and located in the chamber cover An intermediate portion of the assembly; a tapered bottom surface extending from the enlarged passage to a peripheral portion of the chamber cover assembly, wherein the tapered bottom surface is configured and resized to substantially cover Holding the substrate receiving surface; a first conduit coupled to a first gas passage, wherein the first gas passage surrounds the enlarged passage and includes a plurality of first inlets extending into the enlarged passage; and a second conduit And coupled to a second gas passage, wherein the second gas passage surrounds the enlarged passage and includes a plurality of second inlets extending into the enlarged passage, and the first inlets and the second inlets are disposed to provide The circular airflow pattern of the enlarged passage and the passage. The chamber of claim 31, wherein the first gas passage is disposed directly above the second gas passage. The chamber of claim 32, wherein the first gas passage and the second gas passage both bypass an upper portion of the enlarged passage. The chamber of claim 31, wherein the first inlet and the second inlet are each independently disposed to direct a gas at an inner surface of one of the enlarged passages. The chamber of claim 34, wherein the annular air flow pattern comprises a flow pattern selected from the group consisting of eddy currents, spirals, spirals, curls, twists, wraps, eddies, and derived patterns thereof. Group of. The chamber of claim 35, wherein the annular flow pattern extends at least about 1.5 turns around the central axis of the enlarged passage. The chamber of claim 36, wherein the annular flow pattern extends at least about 4 turns around the central axis of the enlarged passage. The chamber of claim 31, wherein a first valve is coupled to the first conduit, a second valve is coupled to the second conduit, and a first gas source is fluid to the first valve Connected, and a second gas source is in fluid communication with the second valve. The chamber of claim 38, wherein the first valve and the second valve allow a pulse time of an atomic layer deposition process to be about 2 seconds or less. The chamber of claim 39, wherein the pulse time is from about 0.05 seconds to about 0.5 seconds. The chamber of claim 31, further comprising a reaction zone having a volume of about 3000 cubic centimeters or less, and the reaction zone is defined between the tapered bottom surface and the substrate receiving surface. The chamber of claim 41, wherein the volume is about 1500 cubic centimeters or less. The chamber of claim 42, wherein the volume is about 600 cubic centimeters or less. A chamber for processing a substrate, comprising: at least: a substrate support comprising a substrate receiving surface; and a chamber cover assembly comprising: an enlarged channel extending along a central axis and located in the chamber cover An intermediate portion of the assembly; a first conduit coupled to the first gas passage, wherein the first gas passage surrounds the enlarged passage and includes a plurality of first inlets extending into the enlarged passage; a second conduit coupled Connecting to a second gas passage, wherein the second gas passage surrounds the enlarged passage and includes a plurality of second inlets extending into the enlarged passage, and the first inlets and the second inlets are arranged to provide one pass An annular airflow pattern of the enlarged channel; and a first valve coupled to the first conduit, and a second valve coupled to the second conduit, wherein the first valve and the second valve may be an atomic layer One pulse time of the deposition process is about 2 seconds or less. A method of depositing a material onto a substrate, the method comprising at least: Depositing a substrate on a substrate support in a processing chamber, and the processing chamber includes a chamber body and a chamber cover assembly, wherein the chamber cover assembly includes: an enlarged passage extending along a central axis and located An intermediate portion of the chamber cover assembly; a tapered bottom surface extending from the enlarged passage to a peripheral portion of the chamber cover assembly, wherein the tapered bottom surface is configured and sized to substantially cover the substrate receiving surface; a first conduit coupled to a first gas passage, wherein the first gas passage surrounds the enlarged passage and includes a plurality of first inlets extending into the enlarged passage; and a second conduit connected to a second gas passage The second gas passage surrounds the enlarged passage and includes a plurality of second inlets extending into the enlarged passage, and the first inlets and the second inlets are disposed to provide an annular airflow pattern throughout the enlarged passage Passing at least one carrier gas stream through the first inlets or the second inlets to form an annular flowing gas; exposing the substrate to the annular flowing gas; and introducing at least one precursor to the pulse An annular gas flow; and depositing a material onto the substrate, the material comprises at least one element from the at least one precursor. The method of claim 45, wherein the annular flowing gas comprises a flow pattern selected from the group consisting of a vortex, a spiral, A group of circles, curls, twists, wraps, vortices, and derived patterns. The method of claim 46, wherein the flow pattern extends at least about 1.5 turns around the central axis of the enlarged passage. The method of claim 47, wherein the flow pattern extends at least about 4 turns around the central axis of the enlarged passage. A chamber for treating a substrate, comprising: at least: a substrate support comprising a substrate receiving surface; and a chamber cover assembly comprising: an enlarged passageway located in a middle portion of the chamber cover assembly, wherein An upper portion of the enlarged passage extends substantially parallel to a central axis of the enlarged passage, and a developed portion of the enlarged passage is tapered away from the central axis; an inner surface is located in the upper portion of the enlarged passage, the inner surface a roughness having a lower roughness than an inner surface of the expanded portion of the enlarged passage; a tapered bottom surface extending from the expanded portion of the enlarged passage to a peripheral portion of the chamber cover assembly, wherein the The tapered bottom surface is configured and sized to substantially cover the substrate receiving surface; a first conduit coupled to a first gas inlet in the upper portion of the enlarged passage; A second conduit is coupled to a second gas inlet in the upper portion of the enlarged passage, wherein the first conduit and the second conduit are configured to provide an annular flow pattern throughout the enlarged passage. A method of depositing a material onto a substrate, the method comprising: placing a substrate on a substrate support in a processing chamber, and the processing chamber comprises a chamber body and a chamber cover assembly, wherein the chamber The cover assembly includes: an enlarged passageway located at an intermediate portion of the chamber cover assembly, wherein an upper portion of the enlarged passage extends substantially parallel to a central axis of the enlarged passageway, and an expanded portion of the enlarged passageway extends away from the central axis a tapered bottom surface extending from the expanded portion of the enlarged passage to a peripheral portion of the chamber cover assembly, wherein the tapered bottom surface is configured and sized to substantially cover the substrate; a first conduit a first gas inlet coupled to the upper portion of the enlarged passage; and a second conduit coupled to a second gas inlet of the upper portion of the enlarged passage, wherein the first conduit and the second conduit a conduit system configured to provide an annular flow pattern; passing at least one carrier gas flow through the first conduit and the second conduit to form an annular flow gas; exposing the substrate to the annular flow gas; At least one precursor gas to the annular flow; and depositing a material onto the substrate, the material comprises at least one of the at least derived from An element of a precursor. The method of claim 50, wherein the annular flow gas comprises a flow pattern selected from the group consisting of eddy currents, spirals, spirals, curls, twists, wraps, eddies, and derived patterns thereof. Group. The method of claim 50, wherein the annular airflow pattern extends at least about 1.5 turns around the central axis of the enlarged passage. The method of claim 52, wherein the annular airflow pattern extends at least about 4 turns around the central axis of the enlarged passage.