[go: up one dir, main page]

TWI499655B - A modified agent for a self-assembled film of a silane group, and a glass surface metallization method using the modifier - Google Patents

A modified agent for a self-assembled film of a silane group, and a glass surface metallization method using the modifier Download PDF

Info

Publication number
TWI499655B
TWI499655B TW102147304A TW102147304A TWI499655B TW I499655 B TWI499655 B TW I499655B TW 102147304 A TW102147304 A TW 102147304A TW 102147304 A TW102147304 A TW 102147304A TW I499655 B TWI499655 B TW I499655B
Authority
TW
Taiwan
Prior art keywords
self
modifier
assembled film
film
glass substrate
Prior art date
Application number
TW102147304A
Other languages
Chinese (zh)
Other versions
TW201525105A (en
Inventor
Wei Ping Dow
Shao Ping Shen
Original Assignee
Nat Univ Chung Hsing
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nat Univ Chung Hsing filed Critical Nat Univ Chung Hsing
Priority to TW102147304A priority Critical patent/TWI499655B/en
Publication of TW201525105A publication Critical patent/TW201525105A/en
Application granted granted Critical
Publication of TWI499655B publication Critical patent/TWI499655B/en

Links

Landscapes

  • Surface Treatment Of Glass (AREA)
  • Chemically Coating (AREA)

Description

矽烷基團層自組裝膜之改質劑,以及利用該改質劑之玻璃表面金屬化方法Modifier for aralkyl group layer self-assembled film, and glass surface metallization method using the same

本發明針對基板表面之矽烷基團層自組裝膜之分子團聚現象提出改質方案,所提出的改質方案是一種改質劑,該改質劑可將基板表面之矽烷基團層的分子團聚現象完全消除,降低矽烷基團層的表面粗燥度,使矽烷基團層表面平坦-緻密-均勻(以下簡稱優化),可在優化的矽烷基團層的末端官能基上導入並構築功能性薄膜(單層膜或多層膜),據以改質該基板的表面。The invention proposes a modification scheme for the molecular agglomeration phenomenon of the self-assembled film of the alkylene group layer on the surface of the substrate, and the proposed modification scheme is a modifier, which can agglomerate the molecules of the alkyl group layer on the surface of the substrate. The phenomenon is completely eliminated, the surface roughness of the alkylene group layer is lowered, and the surface of the alkylene group layer is flat-density-uniform (hereinafter referred to as optimization), and the functionality can be introduced and constructed on the terminal functional group of the optimized alkyl group layer. A film (single layer film or multilayer film) is used to modify the surface of the substrate.

已知矽烷分子可在帶有羥基的基板上,以化學吸附方式形成自組裝膜(self assembly monolayer,SAM),這層自組裝膜可以改基板的表面特性。It is known that a decane molecule can form a self-assembled film (SAM) by chemical adsorption on a substrate having a hydroxyl group, and this self-assembled film can change the surface characteristics of the substrate.

矽烷分子在基板上形成自組裝膜的機制,一般認為是矽烷分子經水解後形成羥基,所形成的羥基再與基板上的羥基作用脫水生成-Si-O-Si-共價鍵,並以化學吸附方式沈積在基板上。但是矽烷分子並非各個都與基板表面形成鍵結,而是相互連成網狀結構或自聚形成較大的基團,網狀結構或自聚基團中的幾個矽烷分子鍵結在基板上,以掃描式電子顯微鏡觀察,基板表面的自組裝膜會有大小不一的凸起團塊(如第一圖),自組裝膜的表面平坦度不佳。The mechanism by which a decane molecule forms a self-assembled film on a substrate is generally considered to be a hydroxyl group formed by hydrolysis of a decane molecule, and the formed hydroxyl group is dehydrated by a hydroxyl group on the substrate to form a -Si-O-Si-covalent bond, and chemically The adsorption mode is deposited on the substrate. However, not all of the decane molecules form a bond with the surface of the substrate, but are interconnected into a network or self-polymerized to form a larger group, and several decane molecules in the network or self-polymerized group are bonded to the substrate. According to the scanning electron microscope, the self-assembled film on the surface of the substrate has convex agglomerates of different sizes (as shown in the first figure), and the surface flatness of the self-assembled film is not good.

由於自組裝膜的末端官能基可再鍵結其他的功能性官能基,所 以可在自組裝膜上架構功能性薄膜。已知,自組裝膜的平坦度、緻密性、均勻性對於功能性薄膜的平坦度、緻密性、均勻性、以及功能發揮有絕對的影響力。表面均勻度不佳的自組裝膜會使附著其上的功能性薄膜也出現不平均的情形,而不平均的功能性薄膜對其功能之發揮有負面影響。因此控制自組裝膜的平坦度、緻密性、均勻性是一項重要的課題。Since the terminal functional groups of the self-assembled film can be bonded to other functional functional groups, The functional film can be constructed on a self-assembled film. It is known that the flatness, compactness, and uniformity of the self-assembled film have an absolute influence on the flatness, compactness, uniformity, and function of the functional film. Self-assembled films with poor surface uniformity can also cause unevenness of the functional film attached thereto, and the uneven functional film negatively affects its function. Therefore, controlling the flatness, compactness, and uniformity of the self-assembled film is an important issue.

在以往,製備平坦化自組裝膜須嚴格控制反應系統的各項因 素,包括基板表面潔淨度、基才表面羥基密度、反應含水量、大氣濕度、反應溫度、反應濃度、溶劑種類、矽烷鏈長度和末端官能基...等。然而,嚴格控制上述各項因素是相當不易的,且最終自組裝膜仍難以達到預期的平坦度。In the past, the preparation of flattened self-assembled films requires strict control of the various factors of the reaction system. The inclusions include substrate surface cleanliness, base surface hydroxyl density, reaction water content, atmospheric humidity, reaction temperature, reaction concentration, solvent type, decane chain length, and terminal functional groups. However, it is quite difficult to strictly control the above factors, and the final self-assembled film is still difficult to achieve the desired flatness.

本發明所要解決的問題,是關於基板表面之矽烷基團層自組裝膜因分子團聚現象而產生之平坦度、緻密性、均勻性不佳的問題,根據上述問題,本發明提出改質方案,該改質方案是一種矽烷基團層自組裝膜之改質劑,透過改質劑可將基板表面之矽烷基團層自組裝膜的分子團聚現象完全消除,降低矽烷基團層自組裝膜的表面粗燥度,使矽烷基團層自組裝膜表面平坦-緻密-均勻(以下簡稱優化)。可在優化之矽烷基團層自組裝膜的末端官能基導入並構築功能性薄膜,據以改質該基板的表面。The problem to be solved by the present invention is that the flatness, compactness, and uniformity of the self-assembled film of the alkylene group layer on the surface of the substrate are not good due to the phenomenon of molecular agglomeration. According to the above problem, the present invention proposes a modification scheme. The modification scheme is a modifier of a self-assembled film of an alkylene group layer, and the molecular agglomeration phenomenon of the self-assembled film of the alkyl group layer on the surface of the substrate can be completely eliminated by the modifier, and the self-assembled film of the alkylene group layer is reduced. The surface roughness is such that the surface of the self-assembled film of the alkylene group layer is flat-density-uniform (hereinafter referred to as optimization). The surface of the substrate can be modified by introducing and constructing a functional film on the terminal functional group of the optimized oxime group layer self-assembled film.

本發明更進一步將改質劑應用於玻璃基板表面金屬化之製程,利用該改質劑優化玻璃基板表面的矽烷基團層自組裝膜,以該優化的自組裝膜做為金屬膜的建構基礎,使該金屬膜得以良好的附著力結合於該玻璃基 板的表面,並呈現優化的(平坦-緻密-均勻)且光澤性如同鏡面一般的表面性質。The invention further applies the modifier to the metallization process of the surface of the glass substrate, and uses the modifier to optimize the self-assembled film of the sulfonyl group layer on the surface of the glass substrate, and uses the optimized self-assembled film as the foundation of the metal film. , the metal film is bonded to the glass base with good adhesion The surface of the board exhibits optimized (flat-dense-uniform) and gloss as mirror-like surface properties.

關於本發明之改質劑,是由金屬化合物MX以及酸性溶液按預定 濃度比例混合而成。所述金屬化合物MX,M可為一價或多價(二價、三價)金屬陽離子之擇一,優選的一價金屬陽離子為K+ 、Na+ 。優選的二價金屬陽離子為Ca2+ 、Mg2+ 、Zn2+ 、Sn2+ 、Cu2+ 、Co2+ 、Ni2+ 之擇一。優選的三價金屬陽離子為Fe3+ 、Al3+ 。可與一價或多價金屬陽離子配位之陰離子X為Cl- 、NO3 - 、Br- 、I- 、ClO4 - 之擇一。當三價金屬陽離子為Fe3+ 時,可與之配位之陰離子不包括I- 。酸性溶液NZ,N可為H+ ,Z可為Cl- 、SO4 2- 、NO3 - 、CH3 COO- 之擇一。金屬化合物濃度為0.1-0.5M,酸性溶液濃度為0.1-0.5M,pH值為1-4。The modifier of the present invention is obtained by mixing a metal compound MX and an acidic solution at a predetermined concentration ratio. The metal compound MX, M may be an alternative of a monovalent or multivalent (divalent, trivalent) metal cation, and the preferred monovalent metal cation is K + , Na + . Preferred divalent metal cations are selected from the group consisting of Ca 2+ , Mg 2+ , Zn 2+ , Sn 2+ , Cu 2+ , Co 2+ , and Ni 2+ . Preferred trivalent metal cations are Fe 3+ , Al 3+ . The anion X which can be coordinated to a monovalent or polyvalent metal cation is one of Cl - , NO 3 - , Br - , I - , ClO 4 - . When the trivalent metal cation is Fe 3+ , the anion to which it can coordinate does not include I . The acidic solution NZ, N may be H + , and Z may be an alternative to Cl - , SO 4 2- , NO 3 - , CH 3 COO - . The concentration of the metal compound is 0.1-0.5 M, the concentration of the acidic solution is 0.1-0.5 M, and the pH is 1-4.

關於利用該改質劑之玻璃表面金屬化方法,主要於於玻璃基板 表面改質程序以及玻璃基板表面鍍銅程序之間進行優化改質胺基矽烷自組裝膜之步驟,將玻璃基板表面之胺基矽烷自組裝膜與該改質劑接觸,使胺基矽烷自組裝膜之自聚基團崩解脫離,從而形成優化的胺基矽烷自組裝膜。以該優化的自組裝膜做為金屬膜的建構基礎,使該金屬膜得以良好的附著力結合於該玻璃基板的表面,並呈現優化的(平坦-緻密-均勻)且光澤性如同鏡面一般的表面性質。A glass surface metallization method using the modifier, mainly on a glass substrate The step of optimizing the modified amino decane self-assembled film between the surface modification procedure and the copper plating process on the surface of the glass substrate, contacting the amine decane self-assembled film on the surface of the glass substrate with the modifier, and self-assembling the amino decane The self-polymerizing group of the membrane disintegrates and detaches, thereby forming an optimized aminodecane self-assembled film. The optimized self-assembled film is used as the foundation of the metal film, so that the metal film can be bonded to the surface of the glass substrate with good adhesion, and is optimized (flat-density-uniform) and the gloss is mirror-like. Surface properties.

第一圖為未使用本發明改質劑之胺基矽烷自組裝膜之掃描式電子顯微鏡圖。The first figure is a scanning electron micrograph of an aminopyridinium self-assembled film without the use of the modifier of the present invention.

第二圖為使用本發明改質劑之胺基矽烷自組裝膜之掃描式電子顯微鏡圖。The second figure is a scanning electron micrograph of an aminopyridinium self-assembled film using the modifier of the present invention.

第三圖為未使用本發明改質劑和使用本發明改質劑之鍍銅層比較示意圖。The third figure is a comparative diagram of a copper plating layer which is not used with the modifier of the present invention and the modifier of the present invention.

第四圖為對玻璃基板表面的鍍銅層進行膠帶沾黏測試示意圖。The fourth figure is a schematic diagram of tape adhesion test on the copper plating layer on the surface of the glass substrate.

本發明矽烷基團層自組裝膜之改質劑,是由金屬化合物MX以及酸性溶液按預定濃度比例混合而成。所述金屬化合物MX,M可為一價或多價(二價、三價)金屬陽離子之擇一,優選的一價金屬陽離子為K+ 、Na+ 。優選的二價金屬陽離子為Ca2+ 、Mg2+ 、Zn2+ 、Sn2+ 、Cu2+ 、Co2+ 、Ni2+ 之擇一。優選的三價金屬陽離子為Fe3+ 、Al3+ 。可與一價或多價金屬陽離子配位之陰離子X為Cl- 、NO3 - 、Br- 、I- 、ClO4 - 之擇一。當三價金屬陽離子為Fe3+ 時,可與之配位之陰離子不包括I- 。酸性溶液NZ,N可為H+ ,Z可為Cl- 、SO4 2- 、NO3 - 、CH3 COO- 之擇一。金屬化合物濃度為0.1-0.5M,酸性溶液濃度為0.1-0.5M,pH值為1-4。The modifier for the self-assembled film of the alkylene group layer of the present invention is obtained by mixing a metal compound MX and an acidic solution at a predetermined concentration ratio. The metal compound MX, M may be an alternative of a monovalent or multivalent (divalent, trivalent) metal cation, and the preferred monovalent metal cation is K + , Na + . Preferred divalent metal cations are selected from the group consisting of Ca 2+ , Mg 2+ , Zn 2+ , Sn 2+ , Cu 2+ , Co 2+ , and Ni 2+ . Preferred trivalent metal cations are Fe 3+ , Al 3+ . The anion X which can be coordinated to a monovalent or polyvalent metal cation is one of Cl - , NO 3 - , Br - , I - , ClO 4 - . When the trivalent metal cation is Fe 3+ , the anion to which it can coordinate does not include I . The acidic solution NZ, N may be H + , and Z may be an alternative to Cl - , SO 4 2- , NO 3 - , CH 3 COO - . The concentration of the metal compound is 0.1-0.5 M, the concentration of the acidic solution is 0.1-0.5 M, and the pH is 1-4.

本發明改質劑是針對基板表面的矽烷基團層自組裝膜進行優化改質,為證明本發明改質劑之有效性,於玻璃基板表面製備胺基矽烷自組裝膜,再將胺基矽烷自組裝膜與本發明之改質劑接觸,再以掃描式電子顯微鏡觀察胺基矽烷自組裝膜改質前及改質後的表面態樣。The modifier of the invention is optimized for the self-assembled film of the sulfonyl group layer on the surface of the substrate, and in order to prove the effectiveness of the modifier of the invention, the amino decane self-assembled film is prepared on the surface of the glass substrate, and then the amino decane is further prepared. The self-assembled film was brought into contact with the modifier of the present invention, and the surface state of the aminopyridinium self-assembled film before and after the modification was observed by a scanning electron microscope.

於玻璃基板表面製備胺基矽烷自組裝膜的方法,如同已知的方式,首先將玻璃基板經酸洗或醇洗,使玻璃基板表面帶有OH基;之後將玻璃基板與矽烷溶液接觸,於該玻璃基板表面形成胺基矽烷自組裝膜。所述的矽烷溶液在本發明中係以胺基矽烷溶於無水溶劑中,溶劑為甲苯、甲醇、乙醇之擇一,濃度為1-5wt%。將玻璃基板從矽烷溶液中取出,與無水溶劑接觸,以終止分子自組裝行為,將玻璃基板洗淨並乾燥,即完成玻璃基板 表面改質。A method for preparing an aminopyridinium self-assembled film on a surface of a glass substrate, as in a known manner, firstly, the glass substrate is pickled or alcohol-washed to have an OH group on the surface of the glass substrate; then the glass substrate is contacted with a decane solution. An amino decane self-assembled film is formed on the surface of the glass substrate. The decane solution is dissolved in an anhydrous solvent in the present invention, and the solvent is selected from the group consisting of toluene, methanol and ethanol, and the concentration is 1-5 wt%. The glass substrate is taken out from the decane solution and contacted with an anhydrous solvent to terminate the self-assembly behavior of the molecule, and the glass substrate is washed and dried to complete the glass substrate. Surface modification.

接著,將附有胺基矽烷自組裝膜的玻璃基板與本發明之改質劑 在室溫(25℃)接觸,利用該改質劑對胺基矽烷自組裝膜進行優化改質,所述的接觸方式包含靜置浸泡或噴灑,接觸時間為3-5分鐘;之後,將玻璃基板取出,以純水清洗後進行乾燥。Next, the glass substrate with the amino decane self-assembled film and the modifier of the present invention Contacting at room temperature (25 ° C), using the modifier to optimize the modification of the amino decane self-assembled film, including contact immersion or spraying, the contact time is 3-5 minutes; The substrate was taken out, washed with pure water, and dried.

如第一圖及第二圖,以掃描式電子顯微鏡(SEM)分別觀察未經優 化改質之胺基矽烷自組裝膜和經優化改質之胺基矽烷自組裝膜的表面。第一圖顯示未經優化改質之胺基矽烷自組裝膜,整個表面佈滿了大大小小的自聚基團凸塊。第二圖顯示經優化改質後的胺基矽烷自組裝膜,自聚基團凸塊幾乎完全消除,膜表面呈現優化的(平坦-緻密-均勻)様態。由此推知,本發明之改質劑應是使胺基矽烷自組裝膜中與NH2 官能基鍵結的自聚基團崩解脫離,而胺基矽烷自組裝膜中與玻璃基板鍵結的Si-O鍵則未受影響[自組裝膜中的單層結構(monolayer)被保持];而被崩解的自聚基團分子以及改質劑均於純水清洗基板的步驟中完全脫離玻璃基板的表面。As shown in the first and second figures, the surface of the unmodified modified amino decane self-assembled film and the optimized modified amino decane self-assembled film were observed by scanning electron microscopy (SEM). The first figure shows an unmodified polyamine-based decane self-assembled film with the entire surface covered with large and small self-polymerized group bumps. The second figure shows the optimized modified amino decane self-assembled film, the self-polymerized group bumps are almost completely eliminated, and the film surface exhibits an optimized (flat-density-uniform) enthalpy state. It is inferred that the modifier of the present invention should disintegrate the self-polymerizing group bonded to the NH 2 functional group in the amino decane self-assembled film, and the amino decane self-assembled film is bonded to the glass substrate. The Si-O bond is unaffected [the monolayer in the self-assembled film is held]; and the disintegrated self-polymerizing molecule and the modifying agent are completely separated from the glass in the step of cleaning the substrate with pure water. The surface of the substrate.

本發明之改質劑確可使玻璃基板表面的胺基矽烷自組裝膜優化 (平坦-緻密-均勻)。可在優化之胺基矽烷自組裝膜的末端官能基導入並構築功能性薄膜(單層膜或多層膜),據以改質該基板的表面。The modifier of the invention can optimize the amino decane self-assembled film on the surface of the glass substrate (flat-density-uniform). A functional film (single layer film or multilayer film) can be introduced and constructed at the terminal functional group of the optimized amino decane self-assembled film to thereby modify the surface of the substrate.

因此,本發明更進一步將改質劑應用於玻璃基板表面金屬化之製 程,利用該改質劑優化玻璃基板表面的胺基矽烷自組裝膜,以該優化的胺基矽烷自組裝膜做為金屬膜的建構基礎,使該金屬膜得以良好的附著力結合於該玻璃基板的表面,並呈現優化的(平坦-緻密-均勻)且光澤性如同鏡面一般的表面性質。Therefore, the present invention further applies the modifier to the metallization of the surface of the glass substrate. Using the modifier to optimize the amino decane self-assembled film on the surface of the glass substrate, the optimized amino decane self-assembled film is used as a metal film construction foundation, so that the metal film can be bonded to the glass with good adhesion. The surface of the substrate and exhibits an optimized (flat-dense-uniform) and glossy surface-like surface properties.

本發明將改質劑應用於玻璃基板表面金屬化之製程,包括以下步驟:步驟一,玻璃基板表面羥基化,將玻璃基板經酸洗或醇洗,使玻璃基板表面帶有OH基;步驟二,胺基矽烷成膜於玻璃基板表面,將表面帶有OH基的玻璃基板與矽烷溶液接觸,於該玻璃基板表面形成胺基矽烷自組裝膜;所述的矽烷溶液在本發明中係以胺基矽烷溶於無水溶劑中,溶劑為甲苯、甲醇、乙醇之擇一,濃度為1-5wt%;接觸預定時間後,將玻璃基板從矽烷溶液中取出,與無水溶劑接觸,以終止分子自組裝行為;之後將玻璃基板洗淨並乾燥,獲得具胺基矽烷自組裝膜之玻璃基板;步驟三,優化改質胺基矽烷自組裝膜,將經步驟二而獲得的具胺基矽烷自組裝膜之玻璃基板與本發明上述改質劑接觸(靜置浸泡或噴灑),接觸時間3-5min,溫度為25度,使玻璃基板表面的胺基矽烷自組裝膜優化(平坦-緻密-均勻),獲得表面自組裝膜優化改質之玻璃基板;步驟四,觸媒接觸,將表面自組裝膜優化改質之玻璃基板與鍍銅所需之觸媒化合物HY接觸;觸媒化合物中的H為Pd2+ 、Ni2+ 、Cu2+ 、Ag+ 之擇一;Y為Cl- 、SO4 2- 、NO3 - 、CH3 COO- 之擇一。使觸媒化合物鍵結在胺基矽烷自組裝膜的末端官能基形成一觸媒層;步驟五,化學鍍銅,採用已知的化學鍍銅方式均將銅還原結合於觸媒層,使玻璃基板表面結合一鍍銅層。The invention applies the modifier to the process of metallizing the surface of the glass substrate, comprising the following steps: Step 1: Hydroxylation of the surface of the glass substrate, pickling or alcohol washing the glass substrate to bring the OH group on the surface of the glass substrate; Step 2 The amino decane is formed on the surface of the glass substrate, and the glass substrate with the OH group on the surface is contacted with the decane solution to form an amino decane self-assembled film on the surface of the glass substrate; the decane solution is amine in the present invention. The decane is dissolved in an anhydrous solvent, and the solvent is selected from the group consisting of toluene, methanol and ethanol at a concentration of 1-5 wt%; after a predetermined period of contact, the glass substrate is taken out from the decane solution and contacted with an anhydrous solvent to terminate the molecular self-assembly. Behavior; the glass substrate is then washed and dried to obtain a glass substrate with an amine decane self-assembled film; in step three, the modified amino decane self-assembled film is optimized, and the amino decane self-assembled film obtained in the second step is obtained. The glass substrate is in contact with the above-mentioned modifier of the invention (stand soaking or spraying), the contact time is 3-5 min, and the temperature is 25 degrees, so that the amino decane self-assembled film on the surface of the glass substrate is optimized ( Tan-compact-uniform), obtain a glass substrate optimized for surface self-assembled film; step 4, contact with the catalyst, contact the glass substrate optimized for surface self-assembled film with the catalyst compound HY required for copper plating; H in the mordant is an alternative to Pd 2+ , Ni 2+ , Cu 2+ , and Ag + ; Y is an alternative to Cl - , SO 4 2- , NO 3 - , and CH 3 COO - . The catalyst compound is bonded to the terminal functional group of the amino decane self-assembled film to form a catalyst layer; in step 5, electroless copper plating is used to reduce copper binding to the catalyst layer by using known electroless copper plating method to make the glass The surface of the substrate is bonded to a copper plating layer.

為證明本發明改質劑對鍍銅層之影響,將未使用本發明改質劑之鍍銅層與使用本發明改質劑之鍍銅層進行比較,以鍍銅層對影像反射的清 晰度來描述銅鍍層的光澤性。第三圖(a)顯示未使用改質劑之鍍銅層呈粗燥霧面,無法呈現拍攝影像之相機倒影,推測是因為未被優化改質的胺基矽烷自組裝膜的團聚分子使觸媒層及鍍銅層不均的緣故。第三圖(b)顯示使用改質劑之鍍銅層具光澤性如同鏡面一般,清楚呈現拍攝影像之像機倒影。推測是因為被優化改質的胺基矽烷自組裝膜能使觸媒層及鍍銅層均勻的緣故。In order to prove the influence of the modifier of the invention on the copper plating layer, the copper plating layer not using the modifier of the invention is compared with the copper plating layer using the modifier of the invention, and the copper layer is used to reflect the image reflection. The degree of clarity is used to describe the gloss of the copper coating. The third figure (a) shows that the copper plating layer without the modifier is rough and matte, and the camera reflection of the captured image cannot be presented. It is presumed that the agglomerated molecules of the aminopyridane self-assembled film that have not been optimized and modified are touched. The reason why the dielectric layer and the copper plating layer are uneven. The third figure (b) shows that the copper plating layer using the modifier is glossy like a mirror, and the camera reflection of the captured image is clearly presented. It is presumed that the modified amino alkane self-assembled film can make the catalyst layer and the copper plating layer uniform.

如第四圖,對玻璃基板表面的鍍銅層進行膠帶沾黏測試(3M,#610,規範ASTM D3359-09),第四圖(a)為百格切割與膠帶測試後的玻璃表面,玻璃表面無明顯銅層剝落;第四圖(b)為膠帶測試後的3M膠帶表面,膠帶表面無明顯銅層沾黏,顯示鍍銅層之附著力佳。As shown in the fourth figure, the copper plating on the surface of the glass substrate is tested for tape adhesion (3M, #610, specification ASTM D3359-09), and the fourth image (a) is the glass surface after the glass cutting and tape test, glass There is no obvious copper layer peeling on the surface; the fourth figure (b) is the surface of the 3M tape after the tape test, and the surface of the tape has no obvious copper layer adhesion, indicating that the adhesion of the copper plating layer is good.

綜上所述,依據上述實驗結果,證實本發明之改質劑確具【發明內容】一欄中所描述的效果。In summary, based on the above experimental results, it was confirmed that the modifier of the present invention has the effect described in the column of the invention.

Claims (14)

一種矽烷基團層自組裝膜之改質劑,該改質劑與矽烷基團層自組裝膜接觸,使該矽烷基團層自組裝膜之自聚基團崩解脫離;該改質劑是由金屬化合物MX以及酸性溶液之混合;所述金屬化合物MX,M可為一價或多價金屬陽離子之擇一,X為Cl- 、NO3 - 、Br- 、ClO4 - 之擇一;酸性溶液NZ,N為H+ ,Z可為Cl- 、SO4 2- 、NO3 - 、CH3 COO- 之擇一;金屬化合物濃度為0.1-0.5M,酸性溶液濃度為0.1-0.5M,該改質劑pH值為1-4。a modifier for a self-assembled film of a ruthenium alkyl group, the modifier being contacted with a self-assembled film of a ruthenium group layer to disintegrate the self-assembled film of the oxime group layer; the modifier is a mixture of a metal compound MX and an acidic solution; the metal compound MX, M may be an alternative of a monovalent or polyvalent metal cation, and X is an alternative to Cl - , NO 3 - , Br - , ClO 4 - ; Solution NZ, N is H + , Z may be Cl - , SO 4 2- , NO 3 - , CH 3 COO - ; metal compound concentration is 0.1-0.5M, acidic solution concentration is 0.1-0.5M, The modifier has a pH of 1-4. 如申請專利範圍第1項所述矽烷基團層自組裝膜之改質劑,其中,一價金屬陽離子為K+ 、Na+ 之擇一。The modifier for the self-assembled film of the alkylene group layer according to the first aspect of the invention, wherein the monovalent metal cation is one of K + and Na + . 如申請專利範圍第1項所述矽烷基團層自組裝膜之改質劑,其中,多價金屬陽離子為二價金屬陽離子。The modifier for the self-assembled film of the alkylene group layer according to the first aspect of the invention, wherein the polyvalent metal cation is a divalent metal cation. 如申請專利範圍第1項所述矽烷基團層自組裝膜之改質劑,其中,多價金屬陽離子為Ca2+ 、Mg2+ 、Zn2+ 、Sn2+ 、Cu2+ 、Co2+ 、Ni2+ 之擇一。The modifier for the self-assembled film of the alkylene group layer according to the first aspect of the patent application, wherein the polyvalent metal cation is Ca 2+ , Mg 2+ , Zn 2+ , Sn 2+ , Cu 2+ , Co 2 + , Ni 2+ choice. 如申請專利範圍第1項所述矽烷基團層自組裝膜之改質劑,其中,多價金屬陽離子為三價金屬陽離子。The modifier for the self-assembled film of the alkylene group layer according to the first aspect of the invention, wherein the polyvalent metal cation is a trivalent metal cation. 如申請專利範圍第1項所述矽烷基團層自組裝膜之改質劑,其中,多價金屬陽離子為Al3+The modifier for the self-assembled film of the alkylene group layer according to claim 1, wherein the polyvalent metal cation is Al 3+ . 如申請專利範圍第1-6項之其中任一項所述矽烷基團層自組裝膜之改質劑,其中,金屬化合物X更包含I-The modifier of the alkylene group layer self-assembled film according to any one of claims 1 to 6, wherein the metal compound X further comprises I - . 如申請專利範圍第1項所述矽烷基團層自組裝膜之改質劑,其中,多價金屬陽離子為Fe3+The modifier for the self-assembled film of the alkylene group layer according to the first aspect of the invention, wherein the polyvalent metal cation is Fe 3+ . 如申請專利範圍第1項所述矽烷基團層自組裝膜之改質劑,其中,該矽烷 基團層自組裝膜為胺基矽烷自組裝膜。The modifier for the self-assembled film of the alkylene group layer according to the first aspect of the patent application, wherein the decane The self-assembled film of the group layer is an aminopyridinium self-assembled film. 一種使用申請專利範圍第1項之改質劑之玻璃表面金屬化方法,包含玻璃基板表面改質程序以及玻璃基板表面鍍銅程序;其中,玻璃基板表面改質程序包括玻璃基板表面羥基化步驟,以及於表面羥基化玻璃基板表面形成胺基矽烷自組裝膜之步驟;玻璃基板表面鍍銅程序包括使胺基矽烷自組裝膜與與鍍銅所需之觸媒化合物接觸,於胺基矽烷自組裝膜的末端官能基鍵結一觸媒層,以及將銅還原結合於觸媒層之鍍銅步驟;其特徵在於:於玻璃基板表面改質程序以及玻璃基板表面鍍銅程序之間進行一優化改質胺基矽烷自組裝膜之步驟,將玻璃基板表面之胺基矽烷自組裝膜與該改質劑接觸,該改質劑將胺基矽烷自組裝膜之自聚基團崩解;之後清洗玻璃基板,使崩解的團聚分子以及改質劑脫離玻璃基板及胺基矽烷自組裝膜。A glass surface metallization method using the modifier of the first application of the patent scope, comprising a glass substrate surface modification procedure and a copper substrate surface copper plating process; wherein the glass substrate surface modification procedure comprises a glass substrate surface hydroxylation step, And a step of forming an amino decane self-assembled film on the surface of the surface hydroxylated glass substrate; the copper plating process on the surface of the glass substrate comprises contacting the amino decane self-assembled film with a catalyst compound required for copper plating, and self-assembling the amino decane The terminal functional group of the film is bonded to a catalyst layer, and the copper plating step of reducing and bonding the copper to the catalyst layer; characterized in that: an optimization is performed between the surface modification process of the glass substrate and the copper plating process on the surface of the glass substrate. a step of self-assembling a film of a sulfhydryl decane, contacting an amine decane self-assembled film on the surface of the glass substrate with the modifier, the modifier disintegrating the self-polymerizing group of the amino decane self-assembled film; The substrate separates the disintegrated agglomerating molecules and the modifying agent from the glass substrate and the aminodecane self-assembled film. 如申請專利範圍第10項所述玻璃表面金屬化方法,其中,胺基矽烷自組裝膜與該改質劑的接觸時間為3-5min。The glass surface metallization method according to claim 10, wherein the contact time of the aminodecane self-assembled film and the modifier is 3-5 min. 如申請專利範圍第10項所述玻璃表面金屬化方法,其中,胺基矽烷自組裝膜與該改質劑的接觸溫度為攝氏25度。The glass surface metallization method according to claim 10, wherein the contact temperature of the aminodecane self-assembled film and the modifier is 25 degrees Celsius. 如申請專利範圍第10項所述玻璃表面金屬化方法,其中,胺基矽烷自組裝膜與該改質劑的接觸手段是將具有胺基矽烷自組裝膜之玻璃靜置浸泡於該改質劑中。The glass surface metallization method according to claim 10, wherein the contact method of the amino decane self-assembled film and the modifier is to immerse the glass having the amino decane self-assembled film in the modifier. in. 如申請專利範圍第10項所述玻璃表面金屬化方法,其中,胺基矽烷自組裝膜與該改質劑的接觸手段是將改質劑噴灑於胺基矽烷自組裝膜表面。The glass surface metallization method according to claim 10, wherein the contacting method of the amino decane self-assembling film and the modifying agent is spraying the modifying agent on the surface of the amino decane self-assembling film.
TW102147304A 2013-12-19 2013-12-19 A modified agent for a self-assembled film of a silane group, and a glass surface metallization method using the modifier TWI499655B (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
TW102147304A TWI499655B (en) 2013-12-19 2013-12-19 A modified agent for a self-assembled film of a silane group, and a glass surface metallization method using the modifier

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
TW102147304A TWI499655B (en) 2013-12-19 2013-12-19 A modified agent for a self-assembled film of a silane group, and a glass surface metallization method using the modifier

Publications (2)

Publication Number Publication Date
TW201525105A TW201525105A (en) 2015-07-01
TWI499655B true TWI499655B (en) 2015-09-11

Family

ID=54197438

Family Applications (1)

Application Number Title Priority Date Filing Date
TW102147304A TWI499655B (en) 2013-12-19 2013-12-19 A modified agent for a self-assembled film of a silane group, and a glass surface metallization method using the modifier

Country Status (1)

Country Link
TW (1) TWI499655B (en)

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101512333A (en) * 2006-08-28 2009-08-19 丰田自动车株式会社 Electrochemically active organic thin film, method for producing the same, and device using the same
JP2012049287A (en) * 2010-08-26 2012-03-08 National Institute Of Advanced Industrial & Technology Surface modification silicon substrate

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101512333A (en) * 2006-08-28 2009-08-19 丰田自动车株式会社 Electrochemically active organic thin film, method for producing the same, and device using the same
JP2012049287A (en) * 2010-08-26 2012-03-08 National Institute Of Advanced Industrial & Technology Surface modification silicon substrate

Also Published As

Publication number Publication date
TW201525105A (en) 2015-07-01

Similar Documents

Publication Publication Date Title
JP3654354B2 (en) VLSI wiring board and manufacturing method thereof
TWI749234B (en) Copper colloidal catalyst solution for electroless copper plating, electroless copper plating method, and method for manufacturing a copper plated substrate
CN101684554A (en) Chemical copper plating solution for polyimide film and surface chemical copper plating method thereof
JP4143385B2 (en) Pretreatment liquid for imparting catalyst for electroless plating, pretreatment method using the liquid, electroless plating film and / or plating coating produced using the method
JP6250903B2 (en) Manufacturing method of three-dimensional conductive pattern structure and three-dimensional molding material used therefor
TWI678431B (en) Method for reducing the optical reflectivity of a copper and copper alloy circuitry, use of an immersion-type palladium or palladium alloy layer and touch screen device comprising a copper or copper alloy circuitry and a palladium or palladium alloy laye
JP2003064480A (en) Method of forming copper-resin composite material
CN101600301A (en) Circuit board and manufacturing method thereof
TWI490377B (en) Method of treating a substrate for supporting catalytic particles for plating process
TW200835804A (en) Manufacture of electroless cobalt deposition compositions for microelectronics applications
TWI499655B (en) A modified agent for a self-assembled film of a silane group, and a glass surface metallization method using the modifier
JP5648229B2 (en) Electroless plating metal film manufacturing method and plating coated substrate
TWI540222B (en) Method for metallizing a substrate surface and substrate having a metalized surface
JP4911586B2 (en) Laminated structure, VLSI wiring board and method for forming them
CN101798683A (en) Preparation method of nano metal solution, nano metal composite particles and metal film layer
CN118653152B (en) A kind of acid copper etching solution and preparation method thereof
Malki et al. Thin electroless Co (W, P) film growth on titanium–nitride layer modified by self-assembled monolayer
CN104451617B (en) A kind of water-soluble nickel protective agent and preparation method thereof, chemical nickel plating method and plating nickel on surface workpiece
CN118407029A (en) Silver nanoparticle electroless copper plating catalytic gum, preparation method and electroless copper plating method
KR101507155B1 (en) Method of Preparing Ag Seed Layer for copper electroless ow Resistance Metal Line
JP4628914B2 (en) Circuit pattern forming method
KR100888984B1 (en) Conductive ball in which nano metal particles are bonded to polymer beads and manufacturing method thereof
JP2004339578A (en) Cobalt alloy plating solution, plating method and plated article
JP7573322B1 (en) Catalyst application solution for electroless plating, catalyst application method, and electroless plating method
JP7737677B2 (en) Electroless plating solution and method for manufacturing wiring board

Legal Events

Date Code Title Description
MM4A Annulment or lapse of patent due to non-payment of fees