TWI480255B - Oxide sintered body and sputtering target - Google Patents
Oxide sintered body and sputtering target Download PDFInfo
- Publication number
- TWI480255B TWI480255B TW100141818A TW100141818A TWI480255B TW I480255 B TWI480255 B TW I480255B TW 100141818 A TW100141818 A TW 100141818A TW 100141818 A TW100141818 A TW 100141818A TW I480255 B TWI480255 B TW I480255B
- Authority
- TW
- Taiwan
- Prior art keywords
- sintered body
- ratio
- oxide
- oxide sintered
- phase
- Prior art date
Links
- 238000005477 sputtering target Methods 0.000 title claims description 51
- 239000011701 zinc Substances 0.000 claims description 117
- 229910007717 ZnSnO Inorganic materials 0.000 claims description 34
- 238000002441 X-ray diffraction Methods 0.000 claims description 26
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 claims description 26
- 239000000203 mixture Substances 0.000 claims description 26
- 239000006104 solid solution Substances 0.000 claims description 25
- 238000005245 sintering Methods 0.000 claims description 24
- 239000000843 powder Substances 0.000 claims description 20
- 239000011787 zinc oxide Substances 0.000 claims description 12
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 claims description 8
- 229910001887 tin oxide Inorganic materials 0.000 claims description 8
- 229910003437 indium oxide Inorganic materials 0.000 claims description 7
- PJXISJQVUVHSOJ-UHFFFAOYSA-N indium(iii) oxide Chemical compound [O-2].[O-2].[O-2].[In+3].[In+3] PJXISJQVUVHSOJ-UHFFFAOYSA-N 0.000 claims description 7
- 238000002156 mixing Methods 0.000 claims description 6
- 239000010408 film Substances 0.000 description 55
- 238000004544 sputter deposition Methods 0.000 description 33
- 150000001875 compounds Chemical class 0.000 description 30
- 239000004065 semiconductor Substances 0.000 description 27
- 238000000034 method Methods 0.000 description 16
- 230000002159 abnormal effect Effects 0.000 description 12
- 238000010438 heat treatment Methods 0.000 description 12
- 230000015572 biosynthetic process Effects 0.000 description 11
- 238000010304 firing Methods 0.000 description 11
- 238000004519 manufacturing process Methods 0.000 description 9
- 230000000052 comparative effect Effects 0.000 description 8
- 229910052751 metal Inorganic materials 0.000 description 8
- 239000002184 metal Substances 0.000 description 8
- 229910006404 SnO 2 Inorganic materials 0.000 description 7
- 238000000465 moulding Methods 0.000 description 7
- 238000012545 processing Methods 0.000 description 7
- 239000002994 raw material Substances 0.000 description 7
- 229910052725 zinc Inorganic materials 0.000 description 7
- 230000002411 adverse Effects 0.000 description 6
- 229910052738 indium Inorganic materials 0.000 description 6
- 230000008569 process Effects 0.000 description 6
- 239000000463 material Substances 0.000 description 5
- 229910052760 oxygen Inorganic materials 0.000 description 5
- 239000010409 thin film Substances 0.000 description 5
- 229910052718 tin Inorganic materials 0.000 description 5
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 4
- 230000000694 effects Effects 0.000 description 4
- 239000001301 oxygen Substances 0.000 description 4
- 238000006243 chemical reaction Methods 0.000 description 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- 239000004677 Nylon Substances 0.000 description 2
- 229910007541 Zn O Inorganic materials 0.000 description 2
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 2
- 238000004458 analytical method Methods 0.000 description 2
- 230000008901 benefit Effects 0.000 description 2
- 239000002131 composite material Substances 0.000 description 2
- 229910001873 dinitrogen Inorganic materials 0.000 description 2
- 238000001035 drying Methods 0.000 description 2
- 229920001778 nylon Polymers 0.000 description 2
- 230000000704 physical effect Effects 0.000 description 2
- 238000010298 pulverizing process Methods 0.000 description 2
- 230000009467 reduction Effects 0.000 description 2
- 238000000550 scanning electron microscopy energy dispersive X-ray spectroscopy Methods 0.000 description 2
- 229910052596 spinel Inorganic materials 0.000 description 2
- 239000011029 spinel Substances 0.000 description 2
- 239000000758 substrate Substances 0.000 description 2
- 238000007088 Archimedes method Methods 0.000 description 1
- 229910005191 Ga 2 O 3 Inorganic materials 0.000 description 1
- 229910020923 Sn-O Inorganic materials 0.000 description 1
- QCWXUUIWCKQGHC-UHFFFAOYSA-N Zirconium Chemical compound [Zr] QCWXUUIWCKQGHC-UHFFFAOYSA-N 0.000 description 1
- -1 ZnO compound Chemical class 0.000 description 1
- 229910007604 Zn—Sn—O Inorganic materials 0.000 description 1
- 239000002253 acid Substances 0.000 description 1
- 230000009471 action Effects 0.000 description 1
- 229910021417 amorphous silicon Inorganic materials 0.000 description 1
- 239000011324 bead Substances 0.000 description 1
- 239000000470 constituent Substances 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 238000005336 cracking Methods 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 238000002447 crystallographic data Methods 0.000 description 1
- 238000001514 detection method Methods 0.000 description 1
- 238000007723 die pressing method Methods 0.000 description 1
- 238000004090 dissolution Methods 0.000 description 1
- 238000005401 electroluminescence Methods 0.000 description 1
- 238000005566 electron beam evaporation Methods 0.000 description 1
- 239000012776 electronic material Substances 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 238000011156 evaluation Methods 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 229910052732 germanium Inorganic materials 0.000 description 1
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 238000005469 granulation Methods 0.000 description 1
- 230000003179 granulation Effects 0.000 description 1
- 230000001771 impaired effect Effects 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 238000007733 ion plating Methods 0.000 description 1
- 239000004973 liquid crystal related substance Substances 0.000 description 1
- 238000001755 magnetron sputter deposition Methods 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 230000007246 mechanism Effects 0.000 description 1
- 239000011812 mixed powder Substances 0.000 description 1
- 239000000178 monomer Substances 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 238000012856 packing Methods 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 238000005240 physical vapour deposition Methods 0.000 description 1
- 238000004445 quantitative analysis Methods 0.000 description 1
- 238000001552 radio frequency sputter deposition Methods 0.000 description 1
- 239000011347 resin Substances 0.000 description 1
- 229920005989 resin Polymers 0.000 description 1
- 238000005070 sampling Methods 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 201000008827 tuberculosis Diseases 0.000 description 1
- 238000001771 vacuum deposition Methods 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
- 229910052726 zirconium Inorganic materials 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
- H01B1/00—Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors
- H01B1/06—Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors mainly consisting of other non-metallic substances
- H01B1/08—Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors mainly consisting of other non-metallic substances oxides
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- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B35/00—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
- C04B35/01—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxide ceramics
- C04B35/453—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxide ceramics based on zinc, tin, or bismuth oxides or solid solutions thereof with other oxides, e.g. zincates, stannates or bismuthates
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- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B35/00—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
- C04B35/01—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxide ceramics
- C04B35/453—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxide ceramics based on zinc, tin, or bismuth oxides or solid solutions thereof with other oxides, e.g. zincates, stannates or bismuthates
- C04B35/457—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxide ceramics based on zinc, tin, or bismuth oxides or solid solutions thereof with other oxides, e.g. zincates, stannates or bismuthates based on tin oxides or stannates
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- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B35/00—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
- C04B35/622—Forming processes; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
- C04B35/626—Preparing or treating the powders individually or as batches ; preparing or treating macroscopic reinforcing agents for ceramic products, e.g. fibres; mechanical aspects section B
- C04B35/62605—Treating the starting powders individually or as mixtures
- C04B35/6261—Milling
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- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B35/00—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
- C04B35/622—Forming processes; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
- C04B35/626—Preparing or treating the powders individually or as batches ; preparing or treating macroscopic reinforcing agents for ceramic products, e.g. fibres; mechanical aspects section B
- C04B35/62605—Treating the starting powders individually or as mixtures
- C04B35/62695—Granulation or pelletising
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- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B35/00—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
- C04B35/622—Forming processes; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
- C04B35/64—Burning or sintering processes
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
- C23C14/08—Oxides
- C23C14/086—Oxides of zinc, germanium, cadmium, indium, tin, thallium or bismuth
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/3407—Cathode assembly for sputtering apparatus, e.g. Target
- C23C14/3414—Metallurgical or chemical aspects of target preparation, e.g. casting, powder metallurgy
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- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B2235/00—Aspects relating to ceramic starting mixtures or sintered ceramic products
- C04B2235/02—Composition of constituents of the starting material or of secondary phases of the final product
- C04B2235/30—Constituents and secondary phases not being of a fibrous nature
- C04B2235/32—Metal oxides, mixed metal oxides, or oxide-forming salts thereof, e.g. carbonates, nitrates, (oxy)hydroxides, chlorides
- C04B2235/3284—Zinc oxides, zincates, cadmium oxides, cadmiates, mercury oxides, mercurates or oxide forming salts thereof
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- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B2235/00—Aspects relating to ceramic starting mixtures or sintered ceramic products
- C04B2235/02—Composition of constituents of the starting material or of secondary phases of the final product
- C04B2235/30—Constituents and secondary phases not being of a fibrous nature
- C04B2235/32—Metal oxides, mixed metal oxides, or oxide-forming salts thereof, e.g. carbonates, nitrates, (oxy)hydroxides, chlorides
- C04B2235/3286—Gallium oxides, gallates, indium oxides, indates, thallium oxides, thallates or oxide forming salts thereof, e.g. zinc gallate
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- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B2235/00—Aspects relating to ceramic starting mixtures or sintered ceramic products
- C04B2235/02—Composition of constituents of the starting material or of secondary phases of the final product
- C04B2235/30—Constituents and secondary phases not being of a fibrous nature
- C04B2235/32—Metal oxides, mixed metal oxides, or oxide-forming salts thereof, e.g. carbonates, nitrates, (oxy)hydroxides, chlorides
- C04B2235/3293—Tin oxides, stannates or oxide forming salts thereof, e.g. indium tin oxide [ITO]
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- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B2235/00—Aspects relating to ceramic starting mixtures or sintered ceramic products
- C04B2235/65—Aspects relating to heat treatments of ceramic bodies such as green ceramics or pre-sintered ceramics, e.g. burning, sintering or melting processes
- C04B2235/656—Aspects relating to heat treatments of ceramic bodies such as green ceramics or pre-sintered ceramics, e.g. burning, sintering or melting processes characterised by specific heating conditions during heat treatment
- C04B2235/6567—Treatment time
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- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B2235/00—Aspects relating to ceramic starting mixtures or sintered ceramic products
- C04B2235/65—Aspects relating to heat treatments of ceramic bodies such as green ceramics or pre-sintered ceramics, e.g. burning, sintering or melting processes
- C04B2235/658—Atmosphere during thermal treatment
- C04B2235/6583—Oxygen containing atmosphere, e.g. with changing oxygen pressures
- C04B2235/6585—Oxygen containing atmosphere, e.g. with changing oxygen pressures at an oxygen percentage above that of air
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- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B2235/00—Aspects relating to ceramic starting mixtures or sintered ceramic products
- C04B2235/70—Aspects relating to sintered or melt-casted ceramic products
- C04B2235/74—Physical characteristics
- C04B2235/77—Density
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- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B2235/00—Aspects relating to ceramic starting mixtures or sintered ceramic products
- C04B2235/70—Aspects relating to sintered or melt-casted ceramic products
- C04B2235/80—Phases present in the sintered or melt-cast ceramic products other than the main phase
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Ceramic Engineering (AREA)
- Organic Chemistry (AREA)
- Materials Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Structural Engineering (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Inorganic Chemistry (AREA)
- Physical Vapour Deposition (AREA)
- Compositions Of Oxide Ceramics (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2010255434 | 2010-11-16 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| TW201237005A TW201237005A (en) | 2012-09-16 |
| TWI480255B true TWI480255B (zh) | 2015-04-11 |
Family
ID=46083968
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW100141818A TWI480255B (zh) | 2010-11-16 | 2011-11-16 | Oxide sintered body and sputtering target |
Country Status (6)
| Country | Link |
|---|---|
| US (1) | US9058914B2 (fr) |
| JP (1) | JP5651095B2 (fr) |
| KR (1) | KR101469401B1 (fr) |
| CN (1) | CN103201232B (fr) |
| TW (1) | TWI480255B (fr) |
| WO (1) | WO2012067036A1 (fr) |
Families Citing this family (16)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP5723262B2 (ja) | 2010-12-02 | 2015-05-27 | 株式会社神戸製鋼所 | 薄膜トランジスタおよびスパッタリングターゲット |
| JP2012235104A (ja) | 2011-04-22 | 2012-11-29 | Kobe Steel Ltd | 薄膜トランジスタ構造、ならびにその構造を備えた薄膜トランジスタおよび表示装置 |
| JP2013254948A (ja) | 2012-05-09 | 2013-12-19 | Kobe Steel Ltd | 薄膜トランジスタおよび表示装置 |
| JP6068232B2 (ja) | 2012-05-30 | 2017-01-25 | 株式会社神戸製鋼所 | 薄膜トランジスタの半導体層用酸化物、薄膜トランジスタ、表示装置およびスパッタリングターゲット |
| JP6002088B2 (ja) | 2012-06-06 | 2016-10-05 | 株式会社神戸製鋼所 | 薄膜トランジスタ |
| JP6043244B2 (ja) | 2012-06-06 | 2016-12-14 | 株式会社神戸製鋼所 | 薄膜トランジスタ |
| JP2014225626A (ja) | 2012-08-31 | 2014-12-04 | 株式会社神戸製鋼所 | 薄膜トランジスタおよび表示装置 |
| JP6134230B2 (ja) | 2012-08-31 | 2017-05-24 | 株式会社神戸製鋼所 | 薄膜トランジスタおよび表示装置 |
| JP6284710B2 (ja) * | 2012-10-18 | 2018-02-28 | 出光興産株式会社 | スパッタリングターゲット、酸化物半導体薄膜及びそれらの製造方法 |
| WO2014168073A1 (fr) * | 2013-04-08 | 2014-10-16 | 三菱マテリアル株式会社 | Cible de pulvérisation cathodique d'oxyde et son procédé de production, et film protecteur pour supports d'enregistrement optique |
| JP6233233B2 (ja) | 2013-08-06 | 2017-11-22 | 三菱マテリアル株式会社 | スパッタリングターゲット及びその製造方法 |
| WO2019026955A1 (fr) | 2017-08-01 | 2019-02-07 | 出光興産株式会社 | Cible de pulvérisation, procédé de formation de film d'oxyde semi-conducteur, et plaque de support |
| KR102470714B1 (ko) | 2017-08-01 | 2022-11-25 | 이데미쓰 고산 가부시키가이샤 | 스퍼터링 타깃, 산화물 반도체 박막, 박막 트랜지스터 및 전자 기기 |
| JP2019052373A (ja) * | 2017-09-14 | 2019-04-04 | 三菱マテリアル株式会社 | スパッタリングターゲット |
| WO2019079207A1 (fr) * | 2017-10-16 | 2019-04-25 | Materials Science International, Inc. | Procédé de production de cible de pulvérisation cathodique en stannate de zinc |
| CN108709915B (zh) * | 2018-09-01 | 2021-11-19 | 山东多瑞电子科技有限公司 | 一种车内有害气体检测装置 |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TW201029952A (en) * | 2008-12-12 | 2010-08-16 | Idemitsu Kosan Co | Composite oxide sintered body and sputtering target comprising same |
Family Cites Families (25)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP3746094B2 (ja) | 1995-06-28 | 2006-02-15 | 出光興産株式会社 | ターゲットおよびその製造方法 |
| JP3223830B2 (ja) * | 1997-02-17 | 2001-10-29 | 株式会社村田製作所 | バリスタ素子の製造方法 |
| JP4560149B2 (ja) * | 1999-03-05 | 2010-10-13 | 出光興産株式会社 | 透明導電材料、透明導電ガラス及び透明導電フィルム |
| KR101902048B1 (ko) | 2001-07-17 | 2018-09-27 | 이데미쓰 고산 가부시키가이샤 | 스퍼터링 타겟 및 투명 도전막 |
| CN1441082A (zh) * | 2002-02-28 | 2003-09-10 | 东曹株式会社 | 溅射靶及其制造方法 |
| JP4793773B2 (ja) | 2003-03-04 | 2011-10-12 | Ｊｘ日鉱日石金属株式会社 | スパッタリングターゲットの製造方法 |
| JP4488184B2 (ja) | 2004-04-21 | 2010-06-23 | 出光興産株式会社 | 酸化インジウム−酸化亜鉛−酸化マグネシウム系スパッタリングターゲット及び透明導電膜 |
| JP4761868B2 (ja) | 2005-07-27 | 2011-08-31 | 出光興産株式会社 | スパッタリングターゲット、その製造方法及び透明導電膜 |
| JP4933756B2 (ja) | 2005-09-01 | 2012-05-16 | 出光興産株式会社 | スパッタリングターゲット |
| US8524123B2 (en) | 2005-09-01 | 2013-09-03 | Idemitsu Kosan Co., Ltd. | Sputtering target, transparent conductive film and transparent electrode |
| CN101268211B (zh) | 2005-09-20 | 2011-04-13 | 出光兴产株式会社 | 溅射靶、透明导电膜及透明电极 |
| US8637124B2 (en) | 2005-09-22 | 2014-01-28 | Idemitsu Kosan Co., Ltd. | Oxide material and sputtering target |
| KR101314946B1 (ko) * | 2005-09-27 | 2013-10-04 | 이데미쓰 고산 가부시키가이샤 | 스퍼터링 타겟, 투명 도전막 및 터치 패널용 투명 전극 |
| JP4552950B2 (ja) | 2006-03-15 | 2010-09-29 | 住友金属鉱山株式会社 | ターゲット用酸化物焼結体、その製造方法、それを用いた透明導電膜の製造方法、及び得られる透明導電膜 |
| JP4994068B2 (ja) * | 2006-08-09 | 2012-08-08 | 出光興産株式会社 | 酸化物導電性材料及びその製造方法 |
| JP5358891B2 (ja) | 2006-08-11 | 2013-12-04 | 日立金属株式会社 | 酸化亜鉛焼結体の製造方法 |
| EP2125361B1 (fr) | 2006-12-28 | 2019-01-23 | 3M Innovative Properties Company | Couche de nucléation pour la formation d'une couche métallique à film mince |
| JP5269501B2 (ja) | 2008-07-08 | 2013-08-21 | 出光興産株式会社 | 酸化物焼結体及びそれからなるスパッタリングターゲット |
| JP5096250B2 (ja) | 2008-07-18 | 2012-12-12 | 出光興産株式会社 | 酸化物焼結体の製造方法、酸化物焼結体、スパッタリングタ−ゲット、酸化物薄膜、薄膜トランジスタの製造方法及び半導体装置 |
| JP5024226B2 (ja) | 2008-08-06 | 2012-09-12 | 日立金属株式会社 | 酸化物焼結体およびその製造方法、スパッタリングターゲット、半導体薄膜 |
| JP2010120803A (ja) | 2008-11-19 | 2010-06-03 | Tosoh Corp | 複合酸化物焼結体 |
| KR101671543B1 (ko) * | 2008-11-20 | 2016-11-01 | 이데미쓰 고산 가부시키가이샤 | ＺｎＯ-ＳｎＯ₂-Ｉｎ₂Ｏ₃계 산화물 소결체 및 비정질 투명 도전막 |
| JP5723262B2 (ja) | 2010-12-02 | 2015-05-27 | 株式会社神戸製鋼所 | 薄膜トランジスタおよびスパッタリングターゲット |
| CN103270602A (zh) | 2010-12-28 | 2013-08-28 | 株式会社神户制钢所 | 薄膜晶体管的半导体层用氧化物及溅射靶材，以及薄膜晶体管 |
| JP2012235104A (ja) | 2011-04-22 | 2012-11-29 | Kobe Steel Ltd | 薄膜トランジスタ構造、ならびにその構造を備えた薄膜トランジスタおよび表示装置 |
-
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- 2011-11-11 US US13/885,868 patent/US9058914B2/en active Active
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Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TW201029952A (en) * | 2008-12-12 | 2010-08-16 | Idemitsu Kosan Co | Composite oxide sintered body and sputtering target comprising same |
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| JP5651095B2 (ja) | 2015-01-07 |
| KR20130069859A (ko) | 2013-06-26 |
| KR101469401B1 (ko) | 2014-12-04 |
| JP2012121791A (ja) | 2012-06-28 |
| CN103201232B (zh) | 2014-12-03 |
| TW201237005A (en) | 2012-09-16 |
| US20130234081A1 (en) | 2013-09-12 |
| CN103201232A (zh) | 2013-07-10 |
| US9058914B2 (en) | 2015-06-16 |
| WO2012067036A1 (fr) | 2012-05-24 |
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