TWI469250B - Substrate supporting units and substrate treating apparatuses including the same - Google Patents
Substrate supporting units and substrate treating apparatuses including the same Download PDFInfo
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- TWI469250B TWI469250B TW101123465A TW101123465A TWI469250B TW I469250 B TWI469250 B TW I469250B TW 101123465 A TW101123465 A TW 101123465A TW 101123465 A TW101123465 A TW 101123465A TW I469250 B TWI469250 B TW I469250B
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- 239000000758 substrate Substances 0.000 title claims description 78
- 238000010438 heat treatment Methods 0.000 claims description 121
- 238000012545 processing Methods 0.000 claims description 34
- 238000005485 electric heating Methods 0.000 claims description 22
- 239000007789 gas Substances 0.000 description 51
- 238000009826 distribution Methods 0.000 description 27
- 238000000034 method Methods 0.000 description 23
- 238000003860 storage Methods 0.000 description 5
- 238000012546 transfer Methods 0.000 description 4
- 230000005684 electric field Effects 0.000 description 3
- 238000005530 etching Methods 0.000 description 3
- 239000013529 heat transfer fluid Substances 0.000 description 3
- 239000002245 particle Substances 0.000 description 3
- 238000001816 cooling Methods 0.000 description 2
- 239000012809 cooling fluid Substances 0.000 description 2
- 238000009413 insulation Methods 0.000 description 2
- 238000013022 venting Methods 0.000 description 2
- 239000000853 adhesive Substances 0.000 description 1
- 230000001070 adhesive effect Effects 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- 238000004380 ashing Methods 0.000 description 1
- 239000006227 byproduct Substances 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- 238000005137 deposition process Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 239000003989 dielectric material Substances 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 239000001307 helium Substances 0.000 description 1
- 229910052734 helium Inorganic materials 0.000 description 1
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 description 1
- 239000011261 inert gas Substances 0.000 description 1
- 239000011810 insulating material Substances 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 230000010287 polarization Effects 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
- H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67098—Apparatus for thermal treatment
- H01L21/67103—Apparatus for thermal treatment mainly by conduction
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
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- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Drying Of Semiconductors (AREA)
Description
本文揭示之本發明係關於一種基板支撐單元，且更特定言之，係關於一種包括加熱器之基板支撐單元。The invention disclosed herein relates to a substrate support unit and, more particularly, to a substrate support unit including a heater.
半導體製造設備在處理腔室中包括一支撐板以支撐基板。電熱線安置於支撐板內以將基板加熱至某一溫度。The semiconductor fabrication apparatus includes a support plate in the processing chamber to support the substrate. The heating wire is placed in the support plate to heat the substrate to a certain temperature.
此等電熱線以螺旋圖案嵌入，且彼此並聯連接。在此狀況下，由於並聯連接之電熱線的總長度大於串聯連接之電熱線的總長度，所以可以較小之間隔排列並聯連接之電熱線。然而，由於並聯連接之電熱線的總長度大於串聯連接之電熱線之總長度，所以並聯連接之加熱線不適宜嵌入於小面積中。此外，因為並聯連接之電熱線延伸朝向支撐板之邊緣，所以其長度得以增加，且其電阻亦得以增加。因此，可能難以獲得所需之熱。These heating wires are embedded in a spiral pattern and connected in parallel with each other. In this case, since the total length of the electric heating wires connected in parallel is larger than the total length of the electric heating wires connected in series, the electric heating wires connected in parallel can be arranged at a small interval. However, since the total length of the electric heating wires connected in parallel is larger than the total length of the electric heating wires connected in series, the heating wires connected in parallel are not suitable for being embedded in a small area. Further, since the electric wires connected in parallel extend toward the edge of the support plate, the length thereof is increased, and the electric resistance thereof is also increased. Therefore, it may be difficult to obtain the required heat.
本發明提供一種用於均勻處理基板之整個表面之設備。The present invention provides an apparatus for uniformly processing the entire surface of a substrate.
本發明之實施例提供基板支撐單元，包括：一支撐板，其上置放基板；及一加熱構件，其安置於該支撐板內以加熱支撐板，其中該加熱構件包括：複數個第一電熱線，其安置於支撐板之第一區域中；及複數個第二電熱線，其安置於支撐板之不同於第一區域之第二區域中，其中該等第一電熱線經由串聯連接及並聯連接中之一者彼此連接，且該等第二電熱線經由串聯連接及並聯連接中之另一者彼此 連接。An embodiment of the present invention provides a substrate supporting unit, comprising: a supporting plate on which a substrate is placed; and a heating member disposed in the supporting plate to heat the supporting plate, wherein the heating member comprises: a plurality of first electric a heat line disposed in the first region of the support plate; and a plurality of second heating wires disposed in the second region of the support plate different from the first region, wherein the first heating wires are connected in series and in parallel One of the connections is connected to each other, and the second heating lines are connected to each other via the other of the series connection and the parallel connection connection.
在一些實施例中，第一電熱線可彼此並聯連接，第二電熱線可彼此串聯連接，且第二區域可具有小於第一區域之面積的面積。In some embodiments, the first heating wires may be connected in parallel with each other, the second heating wires may be connected to each other in series, and the second region may have an area smaller than an area of the first region.
在其他實施例中，第一區域可為支撐板之中心區域，且第二區域可為支撐板之環繞中心區域的邊緣區域。In other embodiments, the first region may be a central region of the support plate and the second region may be an edge region of the support plate surrounding the central region.
在其他實施例中，第一電熱線之各別長度可大於第二電熱線之各別長度。In other embodiments, the respective lengths of the first heating lines may be greater than the respective lengths of the second heating lines.
在其他實施例中，第一電熱線之各別長度可彼此不同。In other embodiments, the respective lengths of the first heating lines may be different from each other.
在本發明之其他實施例中，基板處理設備包括：一處理腔室，其具有內部空間；一支撐板，其安置於該處理腔室內以支撐基板；及一加熱構件，其安置於該支撐板內以加熱支撐板，其中該加熱構件包括：複數個第一電熱線，其安置於支撐板之中心區域中；及複數個第二電熱線，其安置於支撐板之環繞中心區域的邊緣區域中，其中該等第一電熱線經由串聯連接及並聯連接中之一者彼此連接，且該等第二電熱線經由串聯連接及並聯連接中之另一者彼此連接。In other embodiments of the present invention, a substrate processing apparatus includes: a processing chamber having an internal space; a support plate disposed in the processing chamber to support the substrate; and a heating member disposed on the support plate Heating the support plate, wherein the heating member comprises: a plurality of first heating wires disposed in a central region of the support plate; and a plurality of second heating wires disposed in an edge region of the support plate surrounding the central region And wherein the first heating lines are connected to each other via one of a series connection and a parallel connection, and the second heating lines are connected to each other via the other of the series connection and the parallel connection.
在一些實施例中，第一電熱線可彼此並聯連接，第二電熱線可彼此串聯連接，且邊緣區域可具有小於中心區域之面積的面積。In some embodiments, the first heating wires may be connected in parallel with each other, the second heating wires may be connected to each other in series, and the edge regions may have an area smaller than an area of the central region.
在其他實施例中，第一電熱線之各別長度可大於第二電熱線之各別長度。In other embodiments, the respective lengths of the first heating lines may be greater than the respective lengths of the second heating lines.
在其他實施例中，第一電熱線之各別長度可彼此不同。In other embodiments, the respective lengths of the first heating lines may be different from each other.
包括隨附圖式以提供對本發明之進一步理解，且隨附圖式併入本說明書中且構成本說明書之一部分。圖式說明本發明之例示性實施例，且與描述一起用以闡釋本發明之原理。The accompanying drawings are included to provide a further understanding of the invention The drawings illustrate the exemplary embodiments of the invention and,
下文中將參看隨附圖式詳細描述根據本發明之較佳實施例的基板支撐單元及基板處理設備。將取消關於熟知功能或組態之詳細描述，以避免不必要地混淆本發明之主題。Hereinafter, a substrate supporting unit and a substrate processing apparatus according to preferred embodiments of the present invention will be described in detail with reference to the accompanying drawings. Detailed descriptions of well-known functions or configurations are omitted to avoid unnecessarily obscuring the subject matter of the present invention.
圖1為說明根據本發明之一實施例的用於處理基板之設備的橫截面圖。參看圖1，根據當前實施例之基板處理設備10產生電漿以處理基板。基板處理設備10包括處理腔室100，基板支撐單元200，氣體供應部分300及電漿產生部分400。1 is a cross-sectional view illustrating an apparatus for processing a substrate in accordance with an embodiment of the present invention. Referring to Fig. 1, a substrate processing apparatus 10 according to the current embodiment generates a plasma to process a substrate. The substrate processing apparatus 10 includes a processing chamber 100, a substrate supporting unit 200, a gas supply portion 300, and a plasma generating portion 400.
處理腔室100具有內部空間101。內部空間101充當藉由電漿來處理基板W之空間。用於基板W之電漿處理製程包括蝕刻製程。排氣孔102安置於處理腔室100之底部中。排氣孔102連接至排氣管線121。停留於處理腔室100內之氣體及在基板處理製程期間產生之反應副產物可經由排氣管線121排放。此時，內部空間101之壓力降低至某一壓力。The processing chamber 100 has an internal space 101. The internal space 101 serves as a space for processing the substrate W by plasma. The plasma processing process for the substrate W includes an etching process. The vent 102 is disposed in the bottom of the processing chamber 100. The vent hole 102 is connected to the exhaust line 121. The gas remaining in the processing chamber 100 and the reaction by-products generated during the substrate processing process may be discharged via the exhaust line 121. At this time, the pressure of the internal space 101 is lowered to a certain pressure.
基板支撐單元200安置於處理腔室100內。基板支撐單元200支撐基板W。基板支撐單元200包括支撐板210及加熱構件230。支撐板210支撐基板W。加熱構件230安置於支撐板210內，且加熱支撐板210。自加熱構件230產生之熱經由支撐板210轉移至基板W。根據當前實施例，藉由使用靜電力固持基板W之靜電吸盤用作基板支撐單元200。此外，安置於靜電吸盤(亦由200表示)之上端的介電 板用作支撐板210。將介電板(亦由210表示)以盤形介電物質來提供。基板W置放於介電板210之頂部表面上。介電板210之頂部表面具有小於基板W之半徑的半徑。因此，基板W之邊緣定位於介電板210之外。第一供應通道211形成於介電板210中。第一供應通道211自介電板210之頂部表面延伸至其底部表面。第一供應通道211彼此間隔，且經提供為用於將傳熱介質供應至基板W之底部表面的路徑。The substrate supporting unit 200 is disposed within the processing chamber 100. The substrate supporting unit 200 supports the substrate W. The substrate supporting unit 200 includes a support plate 210 and a heating member 230. The support plate 210 supports the substrate W. The heating member 230 is disposed within the support plate 210 and heats the support plate 210. The heat generated from the heating member 230 is transferred to the substrate W via the support plate 210. According to the current embodiment, the electrostatic chuck that holds the substrate W by using electrostatic force is used as the substrate supporting unit 200. In addition, the dielectric placed on the upper end of the electrostatic chuck (also indicated by 200) The plate serves as the support plate 210. A dielectric plate (also indicated by 210) is provided in the form of a disk shaped dielectric material. The substrate W is placed on the top surface of the dielectric plate 210. The top surface of the dielectric plate 210 has a radius smaller than the radius of the substrate W. Therefore, the edge of the substrate W is positioned outside the dielectric plate 210. The first supply passage 211 is formed in the dielectric plate 210. The first supply passage 211 extends from the top surface of the dielectric plate 210 to the bottom surface thereof. The first supply passages 211 are spaced apart from each other and are provided as a path for supplying a heat transfer medium to the bottom surface of the substrate W.
下部電極220嵌入於介電板210中。下部電極220電連接至一外部電源(未示出)。該外部電源包括直流(DC)電源。將DC電流施加至下部電極220以在下部電極220上形成電場。將電場施加至基板W以導致基板W與下部電極220之間的介電極化。正電荷及負電荷藉由介電極化而收集於基板W與下部電極220之間，且正電荷與負電荷之間之靜電引力將基板W固定至介電板210。The lower electrode 220 is embedded in the dielectric plate 210. The lower electrode 220 is electrically connected to an external power source (not shown). The external power source includes a direct current (DC) power source. A DC current is applied to the lower electrode 220 to form an electric field on the lower electrode 220. An electric field is applied to the substrate W to cause a dielectricization between the substrate W and the lower electrode 220. The positive and negative charges are collected between the substrate W and the lower electrode 220 by dielectric polarization, and the electrostatic attraction between the positive and negative charges fixes the substrate W to the dielectric plate 210.
加熱構件230嵌入於介電板210中。加熱構件230包括電熱線231、232及233。The heating member 230 is embedded in the dielectric plate 210. The heating member 230 includes heating wires 231, 232, and 233.
圖2為說明圖1之電熱線的平面圖。圖3為說明圖1之電熱線的透視圖。參看圖2及圖3，電熱線231、232及233嵌入於介電板210中。電熱線231、232及233分別嵌入於介電板210之不同區域中。可根據電熱線231、232及233嵌入之區域而將電熱線231、232及233分類為複數個組。第一電熱線231嵌入於介電板210之第一區域210a中。第一區域210a可對應於介電板210之中心區域。第一電熱線231包括彼此電連接之第一電熱線231a及231b。第一電熱線231a及231b可彼此串聯連接或並聯連接。第一電熱 線231a及231b連接至第一下部電源235。藉由第一下部電源235供應之電流流經並聯連接之第一電熱線231a及231b。第一電熱線231a及231b藉由抵抗電流而產生熱。Figure 2 is a plan view showing the electric heating wire of Figure 1. Figure 3 is a perspective view illustrating the electric heating wire of Figure 1. Referring to FIGS. 2 and 3, the heating wires 231, 232 and 233 are embedded in the dielectric board 210. The heating wires 231, 232, and 233 are respectively embedded in different regions of the dielectric board 210. The heating wires 231, 232, and 233 can be classified into a plurality of groups according to the regions in which the heating wires 231, 232, and 233 are embedded. The first heating wire 231 is embedded in the first region 210a of the dielectric plate 210. The first region 210a may correspond to a central region of the dielectric plate 210. The first heating wire 231 includes first heating wires 231a and 231b electrically connected to each other. The first heating wires 231a and 231b may be connected to each other in series or in parallel. First electric heating Lines 231a and 231b are connected to the first lower power source 235. The current supplied by the first lower power source 235 flows through the first heating wires 231a and 231b connected in parallel. The first heating wires 231a and 231b generate heat by resisting current.
第二電熱線232嵌入於介電板210之第二區域210b中。第二區域210b與第一區域210a不同，且圍繞第一區域210a而安置。第二區域210b為介電板210之環繞其中心區域的最外部區域。第二區域210b具有小於第一區域210a之面積的面積。第二電熱線232包括嵌入於第二區域210b中之第二電熱線232a至232d。第二電熱線232a至232d可彼此串聯連接或並聯連接，其限制條件為其連接方法與第一電熱線231a及231b之連接方法不同。第二電熱線232a至232d連接至第二下部電源236。藉由第二下部電源236供應之電流流經串聯連接之第二電熱線232a至232d。第二電熱線232a至232d藉由抵抗電流而產生熱。The second heating wire 232 is embedded in the second region 210b of the dielectric plate 210. The second region 210b is different from the first region 210a and is disposed around the first region 210a. The second region 210b is the outermost region of the dielectric plate 210 surrounding its central region. The second region 210b has an area smaller than the area of the first region 210a. The second heating wire 232 includes second heating wires 232a to 232d embedded in the second region 210b. The second heating wires 232a to 232d may be connected to each other in series or in parallel, with the restriction that the connection method is different from the connection method of the first heating wires 231a and 231b. The second heating wires 232a to 232d are connected to the second lower power source 236. The current supplied by the second lower power source 236 flows through the second heating wires 232a to 232d connected in series. The second heating wires 232a to 232d generate heat by resisting current.
第三電熱線233嵌入於介電板210之第三區域210c中。第三區域210c安置於第一區域210a與第二區域210b之間，且環繞第一區域210a。第三區域210c具有小於第一區域210a之面積的面積。第三電熱線233包括嵌入於第三區域210c中之第三電熱線233a至233d。第三電熱線233a至233d可彼此串聯連接或並聯連接，其限制條件為其連接方法與第一電熱線231a及231b之連接方法不同。第三電熱線233a至233d連接至第三下部電源237上。藉由第三下部電源237供應之電流流經串聯連接之第三電熱線233a至233d。第三電熱線233a至233d藉由抵抗電流而產生熱。The third heating wire 233 is embedded in the third region 210c of the dielectric plate 210. The third area 210c is disposed between the first area 210a and the second area 210b and surrounds the first area 210a. The third region 210c has an area smaller than the area of the first region 210a. The third heating wire 233 includes third heating wires 233a to 233d embedded in the third region 210c. The third heating wires 233a to 233d may be connected to each other in series or in parallel, with the restriction that the connection method is different from the connection method of the first heating wires 231a and 231b. The third heating wires 233a to 233d are connected to the third lower power source 237. The current supplied by the third lower power source 237 flows through the third heating wires 233a to 233d connected in series. The third heating wires 233a to 233d generate heat by resisting current.
自第一至第三電熱線231、232及233產生之熱經由介電板210轉移至基板W以加熱基板W。第一至第三下部電 源235至237包括DC電源。The heat generated from the first to third heating wires 231, 232, and 233 is transferred to the substrate W via the dielectric plate 210 to heat the substrate W. First to third lower electricity Sources 235 through 237 include a DC power source.
支撐板240定位於介電板210之下。介電板210之底部表面及支撐板240之頂部表面可藉由黏合劑236彼此黏附。支撐板240可由鋁材料構成。支撐板240之頂部表面可具有中心區域高於邊緣區域之階梯形狀。支撐板240之頂部中心區域具有對應於介電板210之底部表面之面積，且黏附至其。第一循環通道241、第二循環通道242及第二供應通道243形成於支撐板240中。The support plate 240 is positioned below the dielectric plate 210. The bottom surface of the dielectric plate 210 and the top surface of the support plate 240 may be adhered to each other by the adhesive 236. The support plate 240 may be constructed of an aluminum material. The top surface of the support plate 240 may have a stepped shape with a central region higher than the edge region. The top central region of the support plate 240 has an area corresponding to the bottom surface of the dielectric plate 210 and is adhered thereto. The first circulation passage 241, the second circulation passage 242, and the second supply passage 243 are formed in the support plate 240.
第一循環通道241經提供為用於循環傳熱介質之路徑。第一循環通道241可以螺旋形狀形成於支撐板241內。或者，可提供複數個第一循環通道241作為具有不同半徑之同心圓的環形通道。在此狀況下，第一循環通道241可彼此連通。第一循環通道241以相同高度形成。The first circulation passage 241 is provided as a path for circulating a heat transfer medium. The first circulation passage 241 may be formed in a spiral shape in the support plate 241. Alternatively, a plurality of first circulation passages 241 may be provided as annular passages having concentric circles of different radii. In this case, the first circulation passages 241 can communicate with each other. The first circulation passages 241 are formed at the same height.
第二供應通道243自第一循環通道241向上延伸，且到達支撐板240之頂部表面。第二供應通道243之數目對應於第一供應通道211之數目。第二供應通道243將第一循環通道241連接至第一供應通道211。經由第一循環通道241循環之傳熱介質順序地通過第二供應通道243及第一供應通道211，且接著供應至基板W之底部表面。傳熱流體充當一介質，藉由該介質將自電漿轉移至基板W之熱轉移至靜電吸盤200。電漿中所含之離子粒子藉由形成於靜電吸盤200上之電力吸引，且移動至靜電吸盤200。此時，離子粒子與基板W碰撞以執行蝕刻製程。當離子粒子與基板W碰撞時，在基板W中產生熱。在基板W中產生之熱經由供應至基板W之底部表面與介電板210之頂部表面之間的空間中的傳熱氣體而轉移至靜電吸盤200。因此，可將基板W 可維持在一設定溫度。傳熱流體包括惰性氣體。根據本發明之一實施例，傳熱流體包括氦(He)氣體。The second supply passage 243 extends upward from the first circulation passage 241 and reaches the top surface of the support plate 240. The number of second supply channels 243 corresponds to the number of first supply channels 211. The second supply passage 243 connects the first circulation passage 241 to the first supply passage 211. The heat transfer medium circulating through the first circulation passage 241 sequentially passes through the second supply passage 243 and the first supply passage 211, and is then supplied to the bottom surface of the substrate W. The heat transfer fluid acts as a medium by which heat transferred from the plasma to the substrate W is transferred to the electrostatic chuck 200. The ion particles contained in the plasma are attracted by the electric power formed on the electrostatic chuck 200 and moved to the electrostatic chuck 200. At this time, the ion particles collide with the substrate W to perform an etching process. When the ion particles collide with the substrate W, heat is generated in the substrate W. The heat generated in the substrate W is transferred to the electrostatic chuck 200 via the heat transfer gas supplied into the space between the bottom surface of the substrate W and the top surface of the dielectric plate 210. Therefore, the substrate W can be Can be maintained at a set temperature. The heat transfer fluid includes an inert gas. According to an embodiment of the invention, the heat transfer fluid comprises helium (He) gas.
第二循環通道242經提供為用於循環冷卻流體之路徑。冷卻流體沿第二循環通道242循環，且冷卻支撐板240。藉由將介電板210與基板W一起冷卻，支撐板240之冷卻將基板W維持於預定溫度。第二循環通道242可以螺旋形狀形成於支撐板240內。或者，可提供複數個第二循環通道242作為具有不同半徑之同心圓的環形通道。在此狀況下，第二循環通道242可彼此連通。第二循環通道242可具有大於第一循環通道241之橫截面積的橫截面積。第二循環通道242以相同高度形成。第二循環通道242可定位於第一循環通道241之下方。The second circulation passage 242 is provided as a path for circulating a cooling fluid. The cooling fluid circulates along the second circulation passage 242 and cools the support plate 240. By cooling the dielectric plate 210 together with the substrate W, the cooling of the support plate 240 maintains the substrate W at a predetermined temperature. The second circulation passage 242 may be formed in the support plate 240 in a spiral shape. Alternatively, a plurality of second circulation passages 242 may be provided as annular passages having concentric circles of different radii. In this case, the second circulation passages 242 may be in communication with each other. The second circulation passage 242 may have a cross-sectional area larger than a cross-sectional area of the first circulation passage 241. The second circulation passages 242 are formed at the same height. The second circulation passage 242 can be positioned below the first circulation passage 241.
絕緣板270提供於支撐板240之下方。絕緣板270以對應於支撐板240之大小來提供。絕緣板270定位於支撐板240與處理腔室100之底部表面之間。絕緣板270由一絕緣材料構成，且將支撐板240與處理腔室100彼此電絕緣。The insulating plate 270 is provided below the support plate 240. The insulating plate 270 is provided in a size corresponding to the support plate 240. The insulating plate 270 is positioned between the support plate 240 and the bottom surface of the processing chamber 100. The insulating plate 270 is composed of an insulating material and electrically insulates the support plate 240 from the processing chamber 100 from each other.
聚焦環280安置於靜電吸盤200之邊緣區域。聚焦環200具有環形狀，且圍繞介電板210而安置。聚焦環280之頂部表面可具有階梯形狀，其中其鄰近介電板210之內部部分低於其外部部分。聚焦環280之內部部分定位於與介電板210之頂部表面相同之高度處。聚焦環280之內部部分在介電板210之外部支撐基板W之邊緣區域。聚焦環280之外部部分環繞基板W之邊緣區域。聚焦環280擴大電場形成區域，使得基板W定位於電漿之中心區域。因此，電漿得以均勻形成於基板W之整個區域上，且因此，基板W 之整個區域可得以均勻蝕刻。The focus ring 280 is disposed in an edge region of the electrostatic chuck 200. The focus ring 200 has a ring shape and is disposed around the dielectric plate 210. The top surface of the focus ring 280 can have a stepped shape with its inner portion adjacent the dielectric plate 210 being lower than its outer portion. The inner portion of the focus ring 280 is positioned at the same height as the top surface of the dielectric plate 210. The inner portion of the focus ring 280 supports the edge region of the substrate W outside the dielectric plate 210. The outer portion of the focus ring 280 surrounds the edge region of the substrate W. The focus ring 280 enlarges the electric field forming region such that the substrate W is positioned in the central region of the plasma. Therefore, the plasma is uniformly formed over the entire area of the substrate W, and thus, the substrate W The entire area can be etched uniformly.
氣體供應部分300將處理氣體供應至處理腔室100中。氣體供應部分300包括氣體儲存部分310、氣體供應管線320及氣體流入口330。氣體供應管線320將氣體儲存部分310連接至氣體流入口330，且將處理氣體自氣體儲存部分310供應至氣體流入口330。The gas supply portion 300 supplies the process gas into the process chamber 100. The gas supply portion 300 includes a gas storage portion 310, a gas supply line 320, and a gas flow inlet 330. The gas supply line 320 connects the gas storage portion 310 to the gas flow inlet 330 and supplies the process gas from the gas storage portion 310 to the gas flow inlet 330.
氣體流入口330連接至安置於上部電極410中之氣體供應孔412，且將處理氣體供應至氣體供應孔412。The gas inflow port 330 is connected to the gas supply hole 412 disposed in the upper electrode 410, and supplies the process gas to the gas supply hole 412.
電漿產生部分400激發停留於處理腔室100內之處理氣體。電漿產生部分400包括上部電極410、氣體分佈板420、蓮蓬頭430及上部電源440。The plasma generating portion 400 excites the process gas remaining in the processing chamber 100. The plasma generating portion 400 includes an upper electrode 410, a gas distribution plate 420, a shower head 430, and an upper power source 440.
上部電極410具有盤形狀，且安置於靜電吸盤200之上方。上部電極410電連接至上部電源440。上部電極410將自上部電源440產生之高頻功率供應至處理腔室100中以激發處理氣體。處理氣體得以激發至電漿狀態。氣體供應孔412安置於上部電極410之中心區域中。氣體供應孔412連接至氣體流入口330，且將氣體供應至安置於上部電極410之下方的緩衝空間415。The upper electrode 410 has a disk shape and is disposed above the electrostatic chuck 200. The upper electrode 410 is electrically connected to the upper power source 440. The upper electrode 410 supplies high frequency power generated from the upper power source 440 into the processing chamber 100 to excite the process gas. The process gas is excited to a plasma state. The gas supply hole 412 is disposed in a central region of the upper electrode 410. The gas supply hole 412 is connected to the gas inflow port 330, and supplies the gas to the buffer space 415 disposed below the upper electrode 410.
氣體分佈板420安置於上部電極410之下方。氣體分佈板420具有大小對應於上部電極410之盤形狀。氣體分佈板420之上部表面具有中心區域低於邊緣區域之階梯形狀。氣體分佈板42之頂部表面及上部電極410之底部表面結合以形成緩衝空間415。在經由氣體供應孔412供應之氣體供應至處理腔室100之內部空間101中之前，氣體暫時停留於緩衝空間415中。第一分佈孔421安置於氣體分佈板420之中心區域中。第一分佈孔421自氣體分佈板420 之頂部表面延伸至其底部表面。第一分佈孔421彼此間隔恆定距離。第一分佈孔421連接至緩衝空間415。The gas distribution plate 420 is disposed below the upper electrode 410. The gas distribution plate 420 has a disk shape having a size corresponding to the upper electrode 410. The upper surface of the gas distribution plate 420 has a stepped shape in which the central region is lower than the edge region. The top surface of the gas distribution plate 42 and the bottom surface of the upper electrode 410 are combined to form a buffer space 415. The gas temporarily stays in the buffer space 415 before the gas supplied through the gas supply hole 412 is supplied into the internal space 101 of the processing chamber 100. The first distribution hole 421 is disposed in a central region of the gas distribution plate 420. The first distribution hole 421 is from the gas distribution plate 420 The top surface extends to its bottom surface. The first distribution holes 421 are spaced apart from each other by a constant distance. The first distribution hole 421 is connected to the buffer space 415.
蓮蓬頭430定位於氣體分佈板420之下方。蓮蓬頭430具有盤形狀。第二分佈孔431安置於蓮蓬頭430中。第二分佈孔431自蓮蓬頭430之頂部表面延伸至其底部表面。第二分佈孔431彼此間隔恆定距離。第一分佈孔421之數目及位置對應於第二分佈孔431之數目及位置。第二分佈孔431分別連接至第一分佈孔421。停留於緩衝空間415內之處理氣體經由第一分佈孔421及第二分佈孔431均勻地供應至處理腔室100中。The showerhead 430 is positioned below the gas distribution plate 420. The showerhead 430 has a disk shape. The second distribution hole 431 is disposed in the shower head 430. The second distribution aperture 431 extends from the top surface of the showerhead 430 to its bottom surface. The second distribution holes 431 are spaced apart from each other by a constant distance. The number and position of the first distribution holes 421 correspond to the number and position of the second distribution holes 431. The second distribution holes 431 are respectively connected to the first distribution holes 421. The process gas remaining in the buffer space 415 is uniformly supplied into the process chamber 100 through the first distribution hole 421 and the second distribution hole 431.
如上所述，第一電熱線231a及231b可並聯連接，且第二電熱線232a至232d可串聯連接，且第三電熱線233a至233d可串聯連接。如圖3圖示，第一電熱線231a及231b構成與第二電熱線232a至232d及第三電熱線233a至233d不同之電路。As described above, the first heating wires 231a and 231b may be connected in parallel, and the second heating wires 232a to 232d may be connected in series, and the third heating wires 233a to 233d may be connected in series. As illustrated in FIG. 3, the first heating wires 231a and 231b constitute circuits different from the second heating wires 232a to 232d and the third heating wires 233a to 233d.
為自嵌入於介電板210之某一區中的電熱線獲得約30 Ω之目標電阻，彼此並聯連接具有約60 Ω電阻之兩電熱線，或提供具有約30 Ω電阻之單一電熱線。當電熱線具有相同之橫截面積時，並聯連接之電熱線的總長度約為串聯連接之電熱線的總長度的四倍。亦即，當目標電阻固定時，並聯連接之電熱線的總長度大於串聯連接之電熱線的總長度。因此，當電熱線圖案在預定面積中具有圓形或螺旋形狀時，並聯連接之電熱線間之距離可減少。因此，電熱線內之區與無電熱線之區之間的溫度差可減少。A target resistance of about 30 Ω is obtained for a heating wire embedded in a certain region of the dielectric board 210, two heating wires having a resistance of about 60 Ω are connected in parallel with each other, or a single heating wire having a resistance of about 30 Ω is provided. When the heating wires have the same cross-sectional area, the total length of the parallel connecting electric heating wires is about four times the total length of the electric heating wires connected in series. That is, when the target resistance is fixed, the total length of the parallel connected heating wires is greater than the total length of the series connected heating wires. Therefore, when the heating line pattern has a circular or spiral shape in a predetermined area, the distance between the electric heating lines connected in parallel can be reduced. Therefore, the temperature difference between the area inside the heating line and the area without the heating line can be reduced.
此外，當並聯連接之電熱線之各別長度彼此不同時，其各別電阻彼此不同，藉此流經電熱線之各別電流量彼此 不同。由於自電熱線產生之熱量視流經電熱線之電流量而定，所以介電板210之溫度可根據其區域藉由調整電熱線之各別長度而改變。Further, when the respective lengths of the electric heating wires connected in parallel are different from each other, their respective resistances are different from each other, whereby the respective current amounts flowing through the heating wires are mutually different different. Since the heat generated by the self-heating line depends on the amount of current flowing through the heating wire, the temperature of the dielectric plate 210 can be changed according to the respective lengths of the heating wires according to the area thereof.
若並聯連接之電熱線嵌入於諸如介電板210之第二區域210b的小區中，則由於並聯連接之電熱線的總長度為大的，所以並聯連接之電熱線之間的距離可非常小。與並聯連接之電熱線不同，串聯連接之電熱線的電阻與其長度成正例。因此，串聯連接之電熱線需要比並聯連接之電熱線小的長度。因此，為在諸如介電板210之第二區域210b之小區中獲得所要目標電阻，可將串聯連接之電熱線嵌入於其中。當電熱線以圓形或螺旋形圖案排列時，因為電熱線延伸朝向介電板210之邊緣區域，所以藉由電熱線形成之圖案的半徑增加。因此，當電熱線串聯連接時，由於自電熱線每單位長度產生之熱量恆定，所以來自電熱線之熱可均勻轉移至介電板210之整個區域。If the electric heating lines connected in parallel are embedded in a cell such as the second region 210b of the dielectric board 210, since the total length of the electric heating lines connected in parallel is large, the distance between the electric heating lines connected in parallel can be very small. Unlike the electric heating wires connected in parallel, the resistance of the electric heating wires connected in series is a positive example of its length. Therefore, the electric heating wires connected in series need to be smaller than the electric heating wires connected in parallel. Therefore, in order to obtain a desired target resistance in a cell such as the second region 210b of the dielectric board 210, a series-connected heating wire may be embedded therein. When the heating wires are arranged in a circular or spiral pattern, since the heating wires extend toward the edge regions of the dielectric plate 210, the radius of the pattern formed by the heating wires increases. Therefore, when the heating wires are connected in series, since the heat generated per unit length of the self-heating wire is constant, the heat from the heating wires can be uniformly transferred to the entire region of the dielectric plate 210.
如上所述，由於並聯及串聯連接且嵌入於介電板210內之電熱線231至233以小且均勻之間隔排列，所以來自電熱線231至233之熱均勻轉移至介電板210之整個區域，且基板W亦得以均勻處理。As described above, since the heating wires 231 to 233 which are connected in parallel and in series and are embedded in the dielectric board 210 are arranged at small and uniform intervals, heat from the heating wires 231 to 233 is uniformly transferred to the entire area of the dielectric board 210. And the substrate W is also uniformly processed.
在以上實施例中，靜電吸盤經例示為基板支撐單元200，但基板支撐單元200不限於此。舉例而言，藉由使用真空固持基板之真空吸盤可經例示為基板支撐單元200，或可例示一機械吸盤。In the above embodiment, the electrostatic chuck is exemplified as the substrate supporting unit 200, but the substrate supporting unit 200 is not limited thereto. For example, a vacuum chuck that uses a vacuum holding substrate can be exemplified as the substrate supporting unit 200, or a mechanical chuck can be exemplified.
儘管以上實施例例示使用電漿之蝕刻製程，但基板處理製程不限於此，且因此，可例示使用電漿之各種基板處理製程，諸如灰化製程、沈積製程及清洗製程。Although the above embodiment exemplifies an etching process using a plasma, the substrate processing process is not limited thereto, and thus, various substrate processing processes using plasma such as an ashing process, a deposition process, and a cleaning process can be exemplified.
根據實施例，由於均勻加熱基板之整個表面，所以基板可得以均勻處理。According to the embodiment, since the entire surface of the substrate is uniformly heated, the substrate can be uniformly processed.
以上揭示之主題將視為具有說明性而非約束性，且隨附申請專利範圍意欲涵蓋屬□本發明之真實精神及範疇內之所有此類修改、增強及其他實施例。因此，在法律允許之最大程度內，本發明之範疇將由以下申請專利範圍及其等效範圍之最廣範容許解釋決定，且不應受以上詳細描述約束或限制。The above-disclosed subject matter is intended to be illustrative, and not restrictive, and all such modifications, enhancements and other embodiments within the true spirit and scope of the invention. Therefore, to the extent permitted by law, the scope of the invention is to be construed as being limited by the scope of the invention
W‧‧‧基板W‧‧‧Substrate
10‧‧‧基板處理設備10‧‧‧Substrate processing equipment
100‧‧‧處理腔室100‧‧‧Processing chamber
101‧‧‧內部空間101‧‧‧Internal space
102‧‧‧排氣孔102‧‧‧ venting holes
121‧‧‧排氣管線121‧‧‧Exhaust line
200‧‧‧基板支撐單元200‧‧‧Substrate support unit
210‧‧‧支撐板210‧‧‧Support board
210a‧‧‧第一區域210a‧‧‧First area
210b‧‧‧第二區域210b‧‧‧Second area
210c‧‧‧第三區域210c‧‧‧ third area
220‧‧‧下部電極220‧‧‧lower electrode
221‧‧‧第一供應通道221‧‧‧First supply channel
230‧‧‧加熱構件230‧‧‧heating components
231‧‧‧第一電熱線231‧‧‧First heating line
231a‧‧‧第一電熱線231a‧‧‧First heating line
231b‧‧‧第一電熱線231b‧‧‧First heating line
232‧‧‧第二電熱線232‧‧‧second heating line
232a‧‧‧第二電熱線232a‧‧‧second heating line
232b‧‧‧第二電熱線232b‧‧‧second heating line
232c‧‧‧第二電熱線232c‧‧‧second heating line
232d‧‧‧第二電熱線232d‧‧‧second heating line
233‧‧‧第三電熱線233‧‧‧ third heating line
233a‧‧‧第三電熱線233a‧‧‧3rd heating line
233b‧‧‧第三電熱線233b‧‧‧ third heating line
233c‧‧‧第三電熱線233c‧‧‧ third heating line
233d‧‧‧第三電熱線233d‧‧‧ third heating line
235‧‧‧第一下部電源235‧‧‧First lower power supply
236‧‧‧第二下部電源236‧‧‧Second lower power supply
237‧‧‧第三下部電源237‧‧‧ Third lower power supply
240‧‧‧支撐板240‧‧‧support plate
241‧‧‧第一循環通道241‧‧‧First circulation channel
242‧‧‧第二循環通道242‧‧‧second circulation channel
243‧‧‧第二供應通道243‧‧‧Second supply channel
270‧‧‧絕緣板270‧‧‧Insulation board
280‧‧‧聚焦環280‧‧‧ Focus ring
300‧‧‧氣體供應部分300‧‧‧ gas supply section
310‧‧‧氣體儲存部分310‧‧‧ gas storage section
320‧‧‧氣體供應管線320‧‧‧ gas supply pipeline
330‧‧‧氣體流入口330‧‧‧ gas inlet
400‧‧‧電漿產生部分400‧‧‧ Plasma generation part
410‧‧‧上部電極410‧‧‧Upper electrode
412‧‧‧氣體供應孔412‧‧‧ gas supply hole
415‧‧‧緩衝空間415‧‧‧ buffer space
420‧‧‧氣體分佈板420‧‧‧ gas distribution board
421‧‧‧第一分佈孔421‧‧‧First distribution hole
430‧‧‧蓮蓬頭430‧‧‧ shower head
431‧‧‧第二分佈孔431‧‧‧Second distribution hole
440‧‧‧上部電源440‧‧‧Upper power supply
圖1為說明根據發明之一實施例的用於處理基板之設備的橫截面圖。1 is a cross-sectional view illustrating an apparatus for processing a substrate in accordance with an embodiment of the present invention.
圖2為說明圖1之電熱線的平面圖。Figure 2 is a plan view showing the electric heating wire of Figure 1.
圖3為說明圖1之電熱線的透視圖。Figure 3 is a perspective view illustrating the electric heating wire of Figure 1.
圖4為說明圖1之第一電熱線之連接的電路圖。4 is a circuit diagram showing the connection of the first heating wire of FIG. 1.
10‧‧‧基板處理設備10‧‧‧Substrate processing equipment
100‧‧‧處理腔室100‧‧‧Processing chamber
101‧‧‧內部空間101‧‧‧Internal space
102‧‧‧排氣孔102‧‧‧ venting holes
121‧‧‧排氣管線121‧‧‧Exhaust line
200‧‧‧基板支撐單元200‧‧‧Substrate support unit
210‧‧‧支撐板210‧‧‧Support board
220‧‧‧下部電極220‧‧‧lower electrode
221‧‧‧第一供應通道221‧‧‧First supply channel
230‧‧‧加熱構件230‧‧‧heating components
240‧‧‧支撐板240‧‧‧support plate
241‧‧‧第一循環通道241‧‧‧First circulation channel
242‧‧‧第二循環通道242‧‧‧second circulation channel
243‧‧‧第二供應通道243‧‧‧Second supply channel
270‧‧‧絕緣板270‧‧‧Insulation board
280‧‧‧聚焦環280‧‧‧ Focus ring
300‧‧‧氣體供應部分300‧‧‧ gas supply section
310‧‧‧氣體儲存部分310‧‧‧ gas storage section
320‧‧‧氣體供應管線320‧‧‧ gas supply pipeline
330‧‧‧氣體流入口330‧‧‧ gas inlet
400‧‧‧電漿產生部分400‧‧‧ Plasma generation part
410‧‧‧上部電極410‧‧‧Upper electrode
412‧‧‧氣體供應孔412‧‧‧ gas supply hole
415‧‧‧緩衝空間415‧‧‧ buffer space
420‧‧‧氣體分佈板420‧‧‧ gas distribution board
421‧‧‧第一分佈孔421‧‧‧First distribution hole
430‧‧‧蓮蓬頭430‧‧‧ shower head
431‧‧‧第二分佈孔431‧‧‧Second distribution hole
440‧‧‧上部電源440‧‧‧Upper power supply
Claims (7)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR20110064986 | 2011-06-30 | ||
| KR1020110101973A KR101329315B1 (en) | 2011-06-30 | 2011-10-06 | Substrate supporting unit and substrate treating apparatus including the unit |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| TW201306169A TW201306169A (en) | 2013-02-01 |
| TWI469250B true TWI469250B (en) | 2015-01-11 |
Family
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW101123465A TWI469250B (en) | 2011-06-30 | 2012-06-29 | Substrate supporting units and substrate treating apparatuses including the same |
Country Status (2)
| Country | Link |
|---|---|
| KR (1) | KR101329315B1 (en) |
| TW (1) | TWI469250B (en) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP6219227B2 (en) * | 2014-05-12 | 2017-10-25 | 東京エレクトロン株式会社 | Heater feeding mechanism and stage temperature control method |
Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6548787B2 (en) * | 2000-01-13 | 2003-04-15 | Sumitomo Electric Industries, Ltd. | Ceramic heater |
| US7173220B2 (en) * | 2004-03-26 | 2007-02-06 | Ngk Insulators, Ltd. | Heating device |
| TW200807612A (en) * | 2006-07-27 | 2008-02-01 | Terasemicon Co Ltd | Semiconductor manufacturing device and method |
| TW200820370A (en) * | 2005-04-26 | 2008-05-01 | Sumitomo Electric Industries | Wafer holder and exposure apparatus equipped with wafer holder |
| US7560668B2 (en) * | 2005-06-02 | 2009-07-14 | Ngk Insulators, Ltd. | Substrate processing device |
| TW201010493A (en) * | 2008-08-20 | 2010-03-01 | Komico Ltd | Ceramic heater, method of manufacturing the same, and apparatus for forming a thin layer having the same |
Family Cites Families (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2005026120A (en) * | 2003-07-03 | 2005-01-27 | Ibiden Co Ltd | Ceramic heater |
| KR20090079540A (en) | 2008-01-18 | 2009-07-22 | 주식회사 코미코 | Substrate support device and substrate processing apparatus having same |
| JP2010199493A (en) * | 2009-02-27 | 2010-09-09 | Hitachi Kokusai Electric Inc | Substrate treatment device |
| KR101124161B1 (en) * | 2009-12-31 | 2012-03-27 | 엘아이지에이디피 주식회사 | Apparatus for chemical vapor deposition |
-
2011
- 2011-10-06 KR KR1020110101973A patent/KR101329315B1/en active Active
-
2012
- 2012-06-29 TW TW101123465A patent/TWI469250B/en active
Patent Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6548787B2 (en) * | 2000-01-13 | 2003-04-15 | Sumitomo Electric Industries, Ltd. | Ceramic heater |
| US7173220B2 (en) * | 2004-03-26 | 2007-02-06 | Ngk Insulators, Ltd. | Heating device |
| TW200820370A (en) * | 2005-04-26 | 2008-05-01 | Sumitomo Electric Industries | Wafer holder and exposure apparatus equipped with wafer holder |
| US7560668B2 (en) * | 2005-06-02 | 2009-07-14 | Ngk Insulators, Ltd. | Substrate processing device |
| TW200807612A (en) * | 2006-07-27 | 2008-02-01 | Terasemicon Co Ltd | Semiconductor manufacturing device and method |
| TW201010493A (en) * | 2008-08-20 | 2010-03-01 | Komico Ltd | Ceramic heater, method of manufacturing the same, and apparatus for forming a thin layer having the same |
Also Published As
| Publication number | Publication date |
|---|---|
| TW201306169A (en) | 2013-02-01 |
| KR101329315B1 (en) | 2013-11-14 |
| KR20130007395A (en) | 2013-01-18 |
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