[go: up one dir, main page]

TWI462872B - Method for preparing nano carbon tube film - Google Patents

Method for preparing nano carbon tube film Download PDF

Info

Publication number
TWI462872B
TWI462872B TW099102180A TW99102180A TWI462872B TW I462872 B TWI462872 B TW I462872B TW 099102180 A TW099102180 A TW 099102180A TW 99102180 A TW99102180 A TW 99102180A TW I462872 B TWI462872 B TW I462872B
Authority
TW
Taiwan
Prior art keywords
carbon nanotube
substrate
nanotube film
growth substrate
reel
Prior art date
Application number
TW099102180A
Other languages
Chinese (zh)
Other versions
TW201125808A (en
Inventor
Liang Liu
Chen Feng
Original Assignee
Beijing Funate Innovation Tech
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Beijing Funate Innovation Tech filed Critical Beijing Funate Innovation Tech
Priority to TW099102180A priority Critical patent/TWI462872B/en
Publication of TW201125808A publication Critical patent/TW201125808A/en
Application granted granted Critical
Publication of TWI462872B publication Critical patent/TWI462872B/en

Links

Landscapes

  • Carbon And Carbon Compounds (AREA)

Description

奈米碳管膜的製備方法Method for preparing nano carbon tube film

本發明涉及一種奈米碳管膜的製備方法。The invention relates to a method for preparing a carbon nanotube film.

奈米碳管(Carbon Nanotube, CNT)係一種由石墨烯片卷成的中空管狀物,其具有優異的力學、熱學及電學性質,因此具有廣闊的應用領域。由於單根奈米碳管的尺寸爲奈米級,難於進行加工,爲便於實際應用,人們嘗試將多個奈米碳管作爲原材料,製成具有較大尺寸的宏觀結構。該宏觀結構由多個奈米碳管組成,可以係膜狀、線狀或其它形狀。現有技術中一般將由多個奈米碳管組成的宏觀膜狀結構稱爲奈米碳管膜(Carbon Nanotube Film)。Carbon Nanotube (CNT) is a hollow tube made of graphene sheets. It has excellent mechanical, thermal and electrical properties and therefore has a wide range of applications. Since the size of a single carbon nanotube is nanometer, it is difficult to process. For practical application, a plurality of carbon nanotubes are tried as raw materials to form a macrostructure having a large size. The macrostructure consists of a plurality of carbon nanotubes and may be in the form of a film, a line or other shape. In the prior art, a macroscopic film structure composed of a plurality of carbon nanotubes is generally referred to as a Carbon Nanotube Film.

馮辰等人在中國發明專利申請公佈說明書第CN101239712A號中揭露了一種從奈米碳管陣列中直接拉取獲得的奈米碳管膜,這種奈米碳管膜具有宏觀尺度且能够自支撑,其包括多個在凡德瓦爾力作用下首尾相連的奈米碳管。由於該奈米碳管膜中奈米碳管基本沿同一方向排列,因此該奈米碳管膜能够較好的發揮奈米碳管軸向具有的導電及導熱等各種優異性質,具有極爲廣泛的應用前景。另外,該奈米碳管膜較爲透明,可作爲透明導電膜應用。Feng Chen et al., in Chinese Patent Application Publication No. CN101239712A, discloses a carbon nanotube film obtained by directly pulling from a carbon nanotube array, which has a macroscopic scale and is self-supporting. It includes a number of carbon nanotubes connected end to end under the action of Van der Valli. Since the carbon nanotubes in the carbon nanotube film are arranged substantially in the same direction, the carbon nanotube film can exhibit various excellent properties such as conductivity and heat conduction in the axial direction of the carbon nanotube, and has a wide range of properties. Application prospects. In addition, the carbon nanotube film is relatively transparent and can be used as a transparent conductive film.

然而,該奈米碳管膜均從一奈米碳管陣列中拉出,膜的面積受到該奈米碳管陣列尺寸的限制。現有技術中的奈米碳管陣列一般採用化學氣相沈積法生長獲得,具體爲將一平整的圓形矽片作爲基底,一表面形成一催化劑薄膜,放置於反應爐中加熱,並通入碳源氣及保護氣體,該碳源氣在矽片表面的催化劑作用下分解,並在矽片表面生長出奈米碳管。目前用於生長奈米碳管陣列的反應爐爲直徑10英寸的管式反應爐。由於在上述生長過程中,管式反應爐內的氣壓小於爐外的大氣壓力,管式反應爐的爐壁將承受向內的壓力,使該管式反應爐的內徑難以做到很大。一般地,當管式反應爐的直徑爲10英寸,長度爲2米,內部氣壓爲10托(Torr)時,內外壁壓力差爲5萬牛頓。而當管式反應爐的直徑增加到40英寸時,內外壁壓力差可達到20萬牛頓。並且,當直徑增加時,由於管式反應爐的爐壁曲率下降,其支撑作用也會减弱,使管式反應爐的穩定性變差甚至破裂,影響安全性。因此,當採用圓形矽片作爲基底在10英寸管式反應爐內生長奈米碳管陣列時,該圓形矽片的最大直徑約爲8英寸,使從該圓形矽片生長的奈米碳管陣列中拉取的奈米碳管膜的面積受到限制,無法滿足實際應用的需要。However, the carbon nanotube membranes are all pulled out from an array of carbon nanotubes, and the area of the membrane is limited by the size of the array of carbon nanotubes. The carbon nanotube array in the prior art is generally obtained by chemical vapor deposition, in particular, a flat circular bract is used as a substrate, a catalyst film is formed on one surface, placed in a reaction furnace for heating, and carbon is introduced. The source gas and the shielding gas are decomposed by the catalyst on the surface of the crucible, and a carbon nanotube is grown on the surface of the crucible. The reactor currently used to grow carbon nanotube arrays is a 10-inch diameter tubular reactor. Since the gas pressure in the tubular reactor is less than the atmospheric pressure outside the furnace during the above growth process, the furnace wall of the tubular reactor will be subjected to the inward pressure, making the inner diameter of the tubular reactor difficult to be large. Generally, when the tubular reactor has a diameter of 10 inches, a length of 2 meters, and an internal gas pressure of 10 Torr, the pressure difference between the inner and outer walls is 50,000 Newtons. When the diameter of the tubular reactor is increased to 40 inches, the pressure difference between the inner and outer walls can reach 200,000 Newtons. Moreover, when the diameter is increased, since the curvature of the furnace wall of the tubular reactor is lowered, the supporting action is also weakened, and the stability of the tubular reactor is deteriorated or even broken, which affects safety. Therefore, when a carbon nanotube array is grown in a 10-inch tubular reactor using a circular cymbal as a substrate, the circular cymbal has a maximum diameter of about 8 inches, allowing the nano-growth from the circular cymbal. The area of the carbon nanotube film drawn in the carbon tube array is limited and cannot meet the needs of practical applications.

有鑒於此,提供一種能够獲得具有較大寬度的奈米碳管膜的製備方法實為必要。In view of the above, it is necessary to provide a preparation method capable of obtaining a carbon nanotube film having a large width.

一種奈米碳管膜的製備方法,其包括以下步驟:提供一曲面狀奈米碳管陣列;採用一拉伸工具從所述奈米碳管陣列中選定一奈米碳管片段;以及向遠離該曲面狀奈米碳管陣列的方向移動該拉伸工具拉取該選定的奈米碳管片段,使奈米碳管首尾相連地被連續拉出,從而形成一連續的奈米碳管膜。A method for preparing a carbon nanotube film, comprising the steps of: providing a curved carbon nanotube array; selecting a carbon nanotube segment from the carbon nanotube array by using a stretching tool; The direction of the curved carbon nanotube array moves the stretching tool to pull the selected carbon nanotube segments, so that the carbon nanotubes are continuously pulled out end to end to form a continuous carbon nanotube film.

相較於現有技術,由於該奈米碳管陣列爲曲面狀,因此,在相同的現有反應爐中製備的該奈米碳管陣列比平面奈米碳管陣列具有更大的尺寸,使從中拉取獲得的奈米碳管膜也具有更大的尺寸。Compared with the prior art, since the carbon nanotube array is curved, the carbon nanotube array prepared in the same existing reactor has a larger size than the planar carbon nanotube array, so that it can be pulled from The obtained carbon nanotube film also has a larger size.

以下將結合附圖詳細說明本發明實施例奈米碳管膜的製備方法。Hereinafter, a method for preparing a carbon nanotube film of an embodiment of the present invention will be described in detail with reference to the accompanying drawings.

該奈米碳管膜包括多個奈米碳管,其中至少部分奈米碳管相互間通過凡德瓦爾力首尾相連,從而使該奈米碳管膜實現自支撑。本發明實施例所述奈米碳管膜的製備方法包括以下步驟:The carbon nanotube membrane comprises a plurality of carbon nanotubes, wherein at least a portion of the carbon nanotubes are connected end to end by a van der Waals force, thereby enabling the carbon nanotube membrane to be self-supporting. The preparation method of the carbon nanotube film according to the embodiment of the invention comprises the following steps:

步驟一:提供一曲面狀奈米碳管陣列;Step 1: providing a curved carbon nanotube array;

步驟二:採用一拉伸工具從所述曲面狀奈米碳管陣列中選定一奈米碳管片段;以及Step two: selecting a carbon nanotube segment from the curved carbon nanotube array by using a stretching tool;

步驟三:向遠離該曲面狀奈米碳管陣列的方向移動該拉伸工具拉取該選定的奈米碳管片段,使奈米碳管首尾相連地被連續拉出,從而形成一連續的奈米碳管膜。Step 3: moving the stretching tool in a direction away from the curved carbon nanotube array to pull the selected carbon nanotube segment, so that the carbon nanotubes are continuously pulled out end to end, thereby forming a continuous nai Carbon tube film.

下面分別對各步驟展開說明。The following describes each step separately.

首先對步驟一進一步說明。所述曲面狀奈米碳管陣列係通過化學氣相沈積法形成於一生長基底的曲面,優選爲超順排奈米碳管陣列。本實施例中,該超順排奈米碳管陣列的製備方法具體包括:First, step one is further explained. The curved carbon nanotube array is formed on a curved surface of a growth substrate by chemical vapor deposition, preferably a super-sequential carbon nanotube array. In this embodiment, the method for preparing the super-sequential carbon nanotube array specifically includes:

(a)提供一生長基底,該生長基底包括一曲面;(a) providing a growth substrate, the growth substrate comprising a curved surface;

(b)在該生長基底的曲面上均勻形成一催化劑層;以及(b) uniformly forming a catalyst layer on the curved surface of the growth substrate;

(c)採用化學氣相沈積法在生長基底的曲面上生長奈米碳管陣列。(c) growing a carbon nanotube array on the curved surface of the growth substrate by chemical vapor deposition.

該生長基底可選用石英基底、耐高溫玻璃基底、P型或N型矽基底、熔點高的金屬基底,或選用形成有氧化層的矽基底。上述基底在生長奈米碳管陣列120的過程中能够耐受所述退火及反應溫度,不致變形或熔化。所述曲面可爲柱面,該柱面表示爲具有一定長度的動直線段沿一曲線軌迹平行移動形成的面。該動直線段被稱爲柱面的直母線,定曲線被稱爲柱面的准線。當准線係圓時所得柱面稱爲圓柱面,當准線係螺旋線時所得柱面爲螺旋柱面。請參閱圖1,該生長基底140的曲面142可以爲該直線段平行地沿一波浪線移動形成的面,所述奈米碳管陣列120生長於該曲面142,從而也具有一曲面形狀。該請參閱圖2,該生長基底140a還可以爲螺旋狀生長基底140a,該生長基底140a的曲面142a可以表示爲具一定寬度的直線段平行地沿一平面螺旋線軌迹移動形成的面,該直線段垂直於平面螺旋線所在的平面。曲面142a可以係螺旋狀生長基底140a的內表面或外表面。該螺旋狀生長基底140a具有一在平面螺旋線朝外的一端的開口144a,以及由該螺旋狀生長基底140a定義的間隙146a,該間隙146a爲螺旋狀間隙,該間隙146a從該開口144a延伸至該螺旋狀生長基底140a中心。可以理解,該生長基底的曲面不限於上述波浪狀或螺旋狀,只要爲一具有一定寬度的直線段平行地沿一曲線軌迹移動形成即可。例如,該生長基底還可以爲彈簧狀生長基底,所述曲面可以表示爲具一定寬度的直線段沿一空間螺旋線軌迹移動形成的面。或者,該生長基底可以爲一筒狀生長基底或柱狀生長基底,如石英管或石英圓柱,該奈米碳管陣列爲筒狀陣列。請參閱圖6及圖7,該生長基底140c的曲面142c可以爲該直線段沿圓形軌迹形成的面,該曲面可以爲生長基底140c的內表面或外表面。The growth substrate may be selected from a quartz substrate, a high temperature resistant glass substrate, a P-type or N-type germanium substrate, a metal substrate having a high melting point, or a germanium substrate formed with an oxide layer. The substrate described above is capable of withstanding the annealing and reaction temperatures during growth of the carbon nanotube array 120 without deformation or melting. The curved surface may be a cylindrical surface, and the cylindrical surface is represented as a surface formed by moving a straight line segment having a certain length along a curved trajectory. The moving straight line segment is called the straight bus bar of the cylinder, and the fixed curve is called the collimating line of the cylindrical surface. When the guideline is rounded, the resulting cylinder is called a cylindrical surface, and when the alignment is a spiral, the resulting cylinder is a spiral cylinder. Referring to FIG. 1, the curved surface 142 of the growth substrate 140 may be a surface formed by the straight line segments moving along a wavy line in parallel. The carbon nanotube array 120 is grown on the curved surface 142, thereby also having a curved shape. 2, the growth substrate 140a may also be a spiral growth substrate 140a. The curved surface 142a of the growth substrate 140a may be a surface formed by a straight line segment having a certain width and moving along a plane spiral track in parallel. The segment is perpendicular to the plane in which the plane spiral is located. The curved surface 142a may spirally grow the inner or outer surface of the substrate 140a. The spiral growth substrate 140a has an opening 144a at one end of the plane spiral outward, and a gap 146a defined by the spiral growth substrate 140a, the gap 146a being a spiral gap extending from the opening 144a to The spiral growth substrate 140a is centered. It can be understood that the curved surface of the growth substrate is not limited to the above-mentioned wavy or spiral shape, as long as a straight line segment having a certain width is moved in parallel along a curved trajectory. For example, the growth substrate may also be a spring-like growth substrate, and the curved surface may be represented as a surface formed by a linear segment having a certain width moving along a spatial spiral track. Alternatively, the growth substrate may be a cylindrical growth substrate or a columnar growth substrate such as a quartz tube or a quartz cylinder, and the carbon nanotube array is a cylindrical array. Referring to FIG. 6 and FIG. 7 , the curved surface 142 c of the growth substrate 140 c may be a surface formed by the straight line segment along a circular trajectory, and the curved surface may be an inner surface or an outer surface of the growth substrate 140 c .

所述步驟(c)可具體爲將上述形成有催化劑層的生長基底在300℃~900℃(如700℃)的空氣中退火約30分鐘~90分鐘;以及將生長基底置於反應爐中,在保護氣體環境下加熱到500℃~900℃(如740℃),然後通入碳源氣體反應約5分鐘~30分鐘,生長得到超順排的奈米碳管陣列。The step (c) may specifically: annealing the growth substrate on which the catalyst layer is formed in air at 300 ° C to 900 ° C (eg, 700 ° C) for about 30 minutes to 90 minutes; and placing the growth substrate in a reaction furnace. It is heated to 500 ° C ~ 900 ° C (such as 740 ° C) in a protective gas atmosphere, and then reacted with a carbon source gas for about 5 minutes to 30 minutes to grow a super-aligned array of carbon nanotubes.

該催化劑層材料可選用鐵(Fe)、鈷(Co)、鎳(Ni)或其任意組合的合金之一,優選爲約5奈米厚的鐵催化劑層。當所述反應爐爲管式反應爐時,該螺旋狀生長基底140a的軸向可平行於管式反應爐的軸向設置於該管式反應爐內。進一步地,可通過一支架固定該生長基底的兩端,使該生長基底懸於該反應爐內。該碳源氣可選用乙炔、乙烯、乙烷等,優選爲乙炔等化學性質較活潑的碳氫化合物,保護氣體可選用氮氣、氨氣或惰性氣體。The catalyst layer material may be selected from one of iron (Fe), cobalt (Co), nickel (Ni) or any combination thereof, preferably an iron catalyst layer of about 5 nm thick. When the reaction furnace is a tubular reactor, the axial direction of the spiral growth substrate 140a may be disposed in the tubular reaction furnace parallel to the axial direction of the tubular reactor. Further, both ends of the growth substrate may be fixed by a bracket to suspend the growth substrate in the reaction furnace. The carbon source gas may be selected from acetylene, ethylene, ethane, etc., preferably a chemically active hydrocarbon such as acetylene, and the protective gas may be nitrogen, ammonia or an inert gas.

該奈米碳管陣列主要由若干奈米碳管構成,其中大多數奈米碳管整體上彼此平行且垂直於該生長基底表面。該奈米碳管陣列的頂面與該生長基底表面平行。通過上述控制生長條件,該奈米碳管陣列中基本不含有雜質,如無定型碳或殘留的催化劑金屬顆粒等。該奈米碳管陣列中的奈米碳管彼此通過凡德瓦爾力緊密接觸形成陣列。該奈米碳管陣列的生長面積可以與上述生長基底曲面的面積基本相同。該奈米碳管陣列中的奈米碳管可以至少包括單壁奈米碳管、雙壁奈米碳管及多壁奈米碳管中的一種。該奈米碳管陣列中奈米碳管的高度爲2微米~10毫米,優選爲100微米~900微米。該奈米碳管的直徑爲1~50奈米。The carbon nanotube array is mainly composed of a plurality of carbon nanotubes, most of which are parallel to each other and perpendicular to the surface of the growth substrate. The top surface of the array of carbon nanotubes is parallel to the surface of the growth substrate. By controlling the growth conditions as described above, the carbon nanotube array contains substantially no impurities such as amorphous carbon or residual catalyst metal particles. The carbon nanotubes in the array of carbon nanotubes are in close contact with each other to form an array by van der Waals force. The growth area of the carbon nanotube array may be substantially the same as the area of the growth substrate curved surface. The carbon nanotubes in the carbon nanotube array may include at least one of a single-walled carbon nanotube, a double-walled carbon nanotube, and a multi-walled carbon nanotube. The height of the carbon nanotubes in the carbon nanotube array is from 2 micrometers to 10 millimeters, preferably from 100 micrometers to 900 micrometers. The carbon nanotubes have a diameter of 1 to 50 nm.

接下來對步驟二進一步說明。請參閱圖4,在上述步驟二中,該奈米碳管片段143由該奈米碳管陣列中的一個或相鄰的多個相互平行的一束奈米碳管145組成。該拉伸工具用於選定並拉取該奈米碳管片段143。該拉伸工具優選爲具有一定寬度的膠帶或表面具有黏膠的基條。該選定所述奈米碳管片段143的過程可以採用膠帶或基條的黏膠接觸該奈米碳管陣列。優選地,該選定的奈米碳管片段143位於生長基底的曲面中所述直線段所在的邊緣。更爲優選地,該選定的奈米碳管片段143的寬度與所述直線段的寬度相等,從而從該奈米碳管陣列中拉取具有該直線段寬度的奈米碳管膜。Next, step 2 is further explained. Referring to FIG. 4, in the above step two, the carbon nanotube segment 143 is composed of one or a plurality of mutually parallel bundles of carbon nanotubes 145 in the array of carbon nanotubes. The stretching tool is used to select and pull the carbon nanotube segment 143. The stretching tool is preferably a tape having a certain width or a base strip having a surface having an adhesive. The process of selecting the carbon nanotube segments 143 can be contacted with the carbon nanotube array using a tape or a strip of adhesive. Preferably, the selected carbon nanotube segment 143 is located at the edge of the curved surface of the growth substrate where the straight segment is located. More preferably, the width of the selected carbon nanotube segment 143 is equal to the width of the straight segment, thereby drawing a carbon nanotube film having the width of the straight segment from the array of carbon nanotubes.

接著對步驟三進一步說明。該拉伸工具逐漸遠離該奈米碳管陣列移動,從而以一定速度拉取該選定的奈米碳管片段143。當該被選定奈米碳管片段143在拉力作用下沿拉取方向逐漸脫離生長基底的同時,由於凡德瓦爾力作用,與該選定的奈米碳管片段143相鄰的其它奈米碳管片段首尾相連地相繼地被拉出,從而形成一連續、均勻的奈米碳管膜。該奈米碳管膜的寬度與該選定的奈米碳管片段143的寬度基本相等。優選地,所述拉伸工具沿垂直於該直線的方向遠離所述奈米碳管陣列移動。拉出的奈米碳管膜一端與所述拉伸工具連接,另一端與所述曲面狀奈米碳管陣列連接,在奈米碳管膜與曲面狀奈米碳管陣列連接處,所述奈米碳管膜與所述基底的切面的夾角小於90度,優選爲小於30度。在不斷的拉取奈米碳管膜的過程中,維持該夾角小於30度,即基本所有奈米碳管均沿與基底的切面小於30度被拉出。當奈米碳管陣列中的奈米碳管相繼地從奈米碳管陣列中被拉出時,形成的奈米碳管膜與該奈米碳管陣列之間具有一界線,該界線隨著奈米碳管陣列不斷消耗而不斷移動。優選地,該界線始終爲一直線,直至所述奈米碳管陣列中全部奈米碳管被拉出。Then step 3 is further explained. The stretching tool is moved away from the array of carbon nanotubes to pull the selected carbon nanotube segment 143 at a certain speed. When the selected carbon nanotube segment 143 is gradually separated from the growth substrate in the pulling direction by the pulling force, other carbon nanotubes adjacent to the selected carbon nanotube segment 143 due to the van der Waals force The fragments are successively pulled out end to end to form a continuous, uniform carbon nanotube membrane. The width of the carbon nanotube film is substantially equal to the width of the selected carbon nanotube segment 143. Preferably, the stretching tool moves away from the array of carbon nanotubes in a direction perpendicular to the line. One end of the drawn carbon nanotube film is connected to the stretching tool, and the other end is connected to the curved carbon nanotube array at a junction of the carbon nanotube film and the curved carbon nanotube array. The angle between the carbon nanotube film and the cut surface of the substrate is less than 90 degrees, preferably less than 30 degrees. During the continuous drawing of the carbon nanotube film, the angle is maintained less than 30 degrees, that is, substantially all of the carbon nanotubes are pulled out along the cut surface of the substrate by less than 30 degrees. When the carbon nanotubes in the carbon nanotube array are successively pulled out from the carbon nanotube array, there is a boundary between the formed carbon nanotube film and the carbon nanotube array, and the boundary The carbon nanotube array is constantly being consumed and constantly moving. Preferably, the boundary is always in a straight line until all of the carbon nanotubes in the array of carbon nanotubes are pulled out.

請參閱圖5,所述奈米碳管膜係由若干奈米碳管組成的自支撑結構。所述若干奈米碳管爲沿該奈米碳管膜的長度方向擇優取向排列。所述擇優取向係指在奈米碳管膜中大多數奈米碳管的整體延伸方向基本朝同一方向。而且,所述大多數奈米碳管的整體延伸方向基本平行於奈米碳管膜的表面。進一步地,所述奈米碳管膜中多數奈米碳管係通過凡德瓦爾力首尾相連。具體地,所述奈米碳管膜中基本朝同一方向延伸的大多數奈米碳管中每一奈米碳管與在延伸方向上相鄰的奈米碳管通過凡德瓦爾力首尾相連。當然,所述奈米碳管膜中存在少數偏離該延伸方向的奈米碳管,這些奈米碳管不會對奈米碳管膜中大多數奈米碳管的整體取向排列構成明顯影響。所述自支撑爲奈米碳管膜不需要大面積的載體支撑,而只要相對兩邊提供支撑力即能整體上懸空而保持自身膜狀狀態,即將該奈米碳管膜置於(或固定於)間隔一定距離設置的兩個支撑體上時,位於兩個支撑體之間的奈米碳管膜能够懸空保持自身膜狀狀態。所述自支撑主要通過奈米碳管膜中存在連續的通過凡德瓦爾力首尾相連延伸排列的奈米碳管而實現。具體地,所述奈米碳管膜中基本朝同一方向延伸的多數奈米碳管,並非絕對的直線狀,可以適當的彎曲;或者並非完全按照延伸方向上排列,可以適當的偏離延伸方向。因此,不能排除奈米碳管膜的基本朝同一方向延伸的多數奈米碳管中並列的奈米碳管之間可能存在部分接觸。Referring to FIG. 5, the carbon nanotube film is a self-supporting structure composed of a plurality of carbon nanotubes. The plurality of carbon nanotubes are arranged in a preferred orientation along the length of the carbon nanotube film. The preferred orientation means that the majority of the carbon nanotubes in the carbon nanotube film extend substantially in the same direction. Moreover, the overall direction of extension of the majority of the carbon nanotubes is substantially parallel to the surface of the carbon nanotube film. Further, most of the carbon nanotubes in the carbon nanotube membrane are connected end to end by van der Waals force. Specifically, each of the carbon nanotubes in the majority of the carbon nanotube membranes extending in the same direction and the carbon nanotubes adjacent in the extending direction are connected end to end by van der Waals force. Of course, there are a few carbon nanotubes in the carbon nanotube film that deviate from the extending direction. These carbon nanotubes do not significantly affect the overall orientation of most of the carbon nanotubes in the carbon nanotube film. The self-supporting carbon nanotube film does not require a large-area carrier support, but can maintain a self-membrane state as long as the supporting force is provided on both sides, that is, the carbon nanotube film is placed (or fixed on) When the two supports are disposed at a certain distance, the carbon nanotube film located between the two supports can be suspended to maintain the self-membrane state. The self-supporting is mainly achieved by the presence of a continuous carbon nanotube in the carbon nanotube film which is continuously arranged by van der Waals force. Specifically, most of the carbon nanotube membranes extending substantially in the same direction in the same direction are not absolutely linear, and may be appropriately bent; or may not be completely aligned in the extending direction, and may be appropriately deviated from the extending direction. Therefore, partial contact between the carbon nanotubes juxtaposed in the majority of the carbon nanotubes extending substantially in the same direction of the carbon nanotube film cannot be excluded.

在宏觀上,由於該奈米碳管膜中大多數奈米碳管沿奈米碳管膜長度方向延伸,該奈米碳管膜長度方向具有比寬度方向明顯優異的導電及導熱性能,另外,由於多數奈米碳管彼此通過凡德瓦爾力首尾相連,在宏觀上該奈米碳管膜爲一自支撑結構。Macroscopically, since most of the carbon nanotubes in the carbon nanotube film extend along the length of the carbon nanotube film, the carbon nanotube film has a conductivity and thermal conductivity superior to the width direction in the longitudinal direction. Since most of the carbon nanotubes are connected end to end by Van der Waals force, the carbon nanotube film is macroscopically self-supporting.

具體地,每一奈米碳管膜包括多個連續且定向排列的奈米碳管片段143。該多個奈米碳管片段143通過凡德瓦爾力首尾相連。每一奈米碳管片段143由多個相互平行的奈米碳管145組成,該多個相互平行的奈米碳管145通過凡德瓦爾力緊密結合。該奈米碳管片段143具有任意的長度、厚度、均勻性及形狀。Specifically, each carbon nanotube film includes a plurality of continuous and aligned carbon nanotube segments 143. The plurality of carbon nanotube segments 143 are connected end to end by Van der Waals force. Each of the carbon nanotube segments 143 is composed of a plurality of mutually parallel carbon nanotubes 145 which are tightly bonded by van der Waals forces. The carbon nanotube segments 143 have any length, thickness, uniformity, and shape.

所述奈米碳管膜的厚度爲0.5奈米~100微米,長度與奈米碳管陣列的面積有關。該奈米碳管膜的比表面積可大於100平方米每克。該奈米碳管膜具有較好的透光性,可見光透過率可以達到75%以上。The carbon nanotube film has a thickness of 0.5 nm to 100 μm, and the length is related to the area of the carbon nanotube array. The specific surface area of the carbon nanotube film can be greater than 100 square meters per gram. The carbon nanotube film has good light transmittance, and the visible light transmittance can reach 75% or more.

進一步地,本實施例還提供一拉取所述奈米碳管膜100並在拉取的同時將該奈米碳管膜100覆蓋於一基底的方法。該方法適用於從形狀特殊的生長基底表面連續地拉取奈米碳管膜100。該方法可以包括:Further, the present embodiment further provides a method of pulling the carbon nanotube film 100 and covering the carbon nanotube film 100 to a substrate while pulling. The method is suitable for continuously drawing the carbon nanotube film 100 from the surface of the growth substrate having a special shape. The method can include:

提供一捲繞於一第一卷軸的層狀基底,該層狀基底具有一第一表面及一第二表面,該第一表面對奈米碳管的黏結力遠大於該第二表面對奈米碳管的黏結力,該第一卷軸的軸向與所述直線段平行;Providing a layered substrate wound on a first reel having a first surface and a second surface, the first surface having a bonding force to the carbon nanotubes being much larger than the second surface to the nanometer a bonding force of the carbon tube, the axial direction of the first reel being parallel to the straight line segment;

以該層狀基底端部的第一表面接觸部分所述奈米碳管陣列,以選定所述奈米碳管片段;以及Contacting a portion of the carbon nanotube array with a first surface of the end of the layered substrate to select the carbon nanotube segment;

轉動所述第一卷軸,使層狀基底逐漸脫離第一卷軸,並向遠離該奈米碳管陣列的方向拉取該選定的奈米碳管片段,從而首尾相連地沿同一方向拉出多個奈米碳管片段,進而形成所述連續的奈米碳管膜並覆蓋於該層狀基底的第一表面。Rotating the first reel to gradually disengage the layered substrate from the first reel and pulling the selected carbon nanotube segment away from the array of carbon nanotubes, thereby pulling the plurality of ends in the same direction end to end A carbon nanotube segment, which in turn forms the continuous carbon nanotube film and covers the first surface of the layered substrate.

進一步地,可提供一第二卷軸,在拉取所述奈米碳管膜並覆蓋在層狀基底的同時,將覆蓋有奈米碳管膜的層狀基底捲繞在該第二卷軸上。Further, a second reel may be provided, and the layered substrate covered with the carbon nanotube film is wound on the second reel while the carbon nanotube film is drawn and covered on the layered substrate.

進一步地,隨著所述奈米碳管不斷從奈米碳管陣列中拉出,奈米碳管陣列不斷被消耗,該奈米碳管膜與奈米碳管陣列的界線也在不斷移動,因此,所述第一卷軸與第二卷軸可共同相對於該生長基底的曲面平行移動,以保持該第一卷軸與所述界線的相對位置不變。優選地,該第一卷軸的直徑小於所述生長基底的曲面具有的最小曲率半徑。Further, as the carbon nanotubes are continuously pulled out from the carbon nanotube array, the carbon nanotube array is continuously consumed, and the boundary between the carbon nanotube film and the carbon nanotube array is constantly moving. Therefore, the first reel and the second reel may move in parallel with respect to a curved surface of the growth substrate to keep the relative position of the first reel and the boundary line unchanged. Preferably, the diameter of the first reel is smaller than the minimum radius of curvature of the curved surface of the growth substrate.

如圖2及圖3所示,當從所述螺旋狀生長基底140a的曲面142a上生長的奈米碳管陣列120a拉取奈米碳管膜100時,該方法具體爲:As shown in FIG. 2 and FIG. 3, when the carbon nanotube film 100 is pulled from the carbon nanotube array 120a grown on the curved surface 142a of the spiral growth substrate 140a, the method is specifically as follows:

步驟1:提供一捲繞於一第一卷軸160的層狀基底170以及一第二卷軸162,該層狀基底170具有一第一表面172及一第二表面174,該第一表面172對奈米碳管的黏結力遠大於該第二表面174對奈米碳管的黏結力,該第一卷軸160與第二卷軸162的軸向與所述直線段平行;Step 1: providing a layered substrate 170 wound on a first reel 160 and a second reel 162 having a first surface 172 and a second surface 174, the first surface 172 The bonding force of the carbon nanotubes is much greater than the bonding force of the second surface 174 to the carbon nanotubes, and the axial direction of the first reel 160 and the second reel 162 is parallel to the straight line segment;

步驟2:以所述層狀的層狀基底170端部的第一表面172接觸所述奈米碳管陣列120a,以選定所述奈米碳管片段143;Step 2: contacting the carbon nanotube array 120a with the first surface 172 of the end of the layered layered substrate 170 to select the carbon nanotube segment 143;

步驟3:轉動所述第一卷軸160,使層狀的層狀基底170逐漸脫離第一卷軸160,以一定速度向遠離該奈米碳管陣列120a的方向拉取該選定的奈米碳管片段143,從而首尾相連地沿同一方向拉出多個奈米碳管片段143,進而形成所述連續的奈米碳管膜100並覆蓋於該層狀的層狀基底170的第一表面172後使該層狀基底170捲繞至該第二卷軸162;以及Step 3: Rotating the first reel 160 to gradually separate the layered layered substrate 170 from the first reel 160, and pulling the selected carbon nanotube segment away from the carbon nanotube array 120a at a certain speed 143, thereby pulling out a plurality of carbon nanotube segments 143 in the same direction end to end, thereby forming the continuous carbon nanotube film 100 and covering the first surface 172 of the layered layered substrate 170. The layered substrate 170 is wound to the second reel 162;

步驟4:在將層狀基底170捲繞至第二卷軸162的同時,使該第一卷軸160相對於該螺旋狀生長基底140a的曲面平行移動,從而從所述螺旋狀生長基底140a的開口144a進入該間隙146a。Step 4: while the layered substrate 170 is wound to the second reel 162, the first reel 160 is moved in parallel with respect to the curved surface of the spiral growth substrate 140a, thereby opening 144a from the spiral growth substrate 140a. Enter the gap 146a.

下面就上述步驟1至4作進一步說明。該層狀基底170可爲一表面具有塗層的柔性聚合物膜、金屬箔或紙。該柔性聚合物膜的材料可以爲塑膠或樹脂,本實施例爲聚對苯二甲酸乙二酯(PET)。該塗層可以由矽、石蠟或特氟隆等不乾膠底紙表面的常用塗層材料形成。該層狀基底170具有塗層的表面爲第二表面174。由於所述奈米碳管膜100具有極大的比表面積,因此具有較強的黏性,與所述塑膠、樹脂、金屬箔或紙等材料直接接觸時可直接黏附結合,而該奈米碳管膜100對矽、石蠟或特氟隆等材料的黏結力則較弱。因此,當該奈米碳管膜100一表面與所述層狀基底170的第一表面172接觸,另一表面與第二表面174接觸時,該奈米碳管膜100可與該第二表面174容易地分離。另外,該層狀基底170的另一表面可具有膠黏層,該具有膠黏層的表面爲第一表面172。從而使該奈米碳管膜100更爲牢固地與該第一表面172結合。該膠黏層可以爲一壓敏膠黏層、一熱熔膠層或一感光膠層。該層狀基底170捲繞於所述第一卷軸160上,並與該第二卷軸162相互平行設置,且平行於所述直線段。The above steps 1 to 4 are further explained. The layered substrate 170 can be a flexible polymeric film, metal foil or paper having a coating on its surface. The material of the flexible polymer film may be plastic or resin, and in this embodiment, polyethylene terephthalate (PET). The coating may be formed from conventional coating materials on the surface of self-adhesive backing paper such as enamel, paraffin or Teflon. The surface of the layered substrate 170 having a coating is a second surface 174. Since the carbon nanotube film 100 has a large specific surface area, it has strong viscosity, and can directly adhere and bond when directly contacting the plastic, resin, metal foil or paper, and the carbon nanotube The adhesion strength of the film 100 to materials such as enamel, paraffin or Teflon is weak. Therefore, when one surface of the carbon nanotube film 100 is in contact with the first surface 172 of the layered substrate 170 and the other surface is in contact with the second surface 174, the carbon nanotube film 100 can be associated with the second surface. 174 is easily separated. In addition, the other surface of the layered substrate 170 may have an adhesive layer, and the surface having the adhesive layer is the first surface 172. Thereby, the carbon nanotube film 100 is more firmly bonded to the first surface 172. The adhesive layer can be a pressure sensitive adhesive layer, a hot melt adhesive layer or a photosensitive adhesive layer. The layered substrate 170 is wound on the first reel 160 and disposed parallel to the second reel 162 and parallel to the straight line segment.

在步驟2中,所述層狀基底170位於端部的部分第一表面172黏附所述奈米碳管陣列120a中的奈米碳管,從而作爲所述拉伸工具選定所述奈米碳管片段143。優選地,該選定的奈米碳管片段143與所述第一卷軸160的軸線基本平行,從而與所述直線段基本平行。本實施例中,該層狀基底170爲捲繞於第一卷軸160的帶狀基底,該帶狀層狀基底170的第一表面172平行於第一卷軸160的邊緣接觸所述奈米碳管陣列120a,並選定所述奈米碳管片段143。In step 2, the portion of the first surface 172 of the layered substrate 170 at the end adheres to the carbon nanotubes in the carbon nanotube array 120a, thereby selecting the carbon nanotube as the stretching tool. Fragment 143. Preferably, the selected carbon nanotube segment 143 is substantially parallel to the axis of the first spool 160 so as to be substantially parallel to the straight segment. In this embodiment, the layered substrate 170 is a strip-shaped substrate wound on the first reel 160, and the first surface 172 of the strip-shaped layered substrate 170 contacts the carbon nanotubes parallel to the edge of the first reel 160. The array 120a is selected and the carbon nanotube segments 143 are selected.

在步驟3中,當該層狀基底170被捲繞於第二卷軸162時,由於該層狀基底170的端部選定了所述奈米碳管片段143,該被選定的奈米碳管片段143沿遠離該奈米碳管陣列120a的方向被拉出,從而形成所述奈米碳管膜100。優選地,通過調整該第一卷軸160與所述的相對位置,使所述奈米碳管片段143始終傾斜的被拉出。具體地,所述奈米碳管膜100一端與所述層狀基底170連接,另一端與所述曲面狀奈米碳管陣列120a連接,在奈米碳管膜100與曲面狀奈米碳管陣列120a連接處,所述奈米碳管膜100與所述生長基底140a的切面夾角小於90度,優選小於30度。該拉出的奈米碳管膜100一端維持與所述奈米碳管陣列120a相連,通過將該層狀基底170捲繞至該第二卷軸162,該奈米碳管膜100相繼覆蓋至所述層狀基底170的第一表面172,並對奈米碳管陣列120a中的奈米碳管産生拉力,使更多的奈米碳管片段143被首尾相連地相繼從奈米碳管陣列120a中拉出,並覆蓋於所述第一表面172,與該層狀基底170一同被捲繞於所述第二卷軸162上。在捲繞於第二卷軸162時,可如圖3所示,使未覆蓋奈米碳管膜100的第二表面174更爲靠近第二卷軸162軸心,也可相反地使第一表面172更爲靠近第二卷軸162的軸心。In step 3, when the layered substrate 170 is wound on the second reel 162, the selected carbon nanotube segment 143 is selected due to the end of the layered substrate 170, the selected carbon nanotube segment The 143 is pulled out in a direction away from the carbon nanotube array 120a to form the carbon nanotube film 100. Preferably, the carbon nanotube segments 143 are pulled out at all times by adjusting the relative position of the first reel 160 to the said first reel 160. Specifically, one end of the carbon nanotube film 100 is connected to the layered substrate 170, and the other end is connected to the curved carbon nanotube array 120a, and the carbon nanotube film 100 and the curved carbon nanotube. At the junction of the array 120a, the carbon nanotube film 100 is at an angle of less than 90 degrees, preferably less than 30 degrees, to the facet of the growth substrate 140a. The drawn carbon nanotube film 100 is maintained at one end connected to the carbon nanotube array 120a, and the carbon nanotube film 100 is successively covered by the layered substrate 170 to the second reel 162. The first surface 172 of the layered substrate 170 generates a tensile force on the carbon nanotubes in the carbon nanotube array 120a, so that more carbon nanotube segments 143 are successively connected end from end to the carbon nanotube array 120a. The medium is pulled out and covers the first surface 172, and is wound on the second reel 162 together with the layered substrate 170. When wound on the second reel 162, as shown in FIG. 3, the second surface 174 of the uncovered carbon nanotube film 100 may be closer to the axis of the second reel 162, or the first surface 172 may be reversed. It is closer to the axis of the second reel 162.

隨著奈米碳管片段143不斷地從所述奈米碳管陣列120a中相繼地被拉出,該奈米碳管陣列120a的面積不斷减小,該奈米碳管陣列120a與該奈米碳管膜100之間的界線122a不斷移動。因此,在步驟4中,在使層狀基底170捲繞於第二卷軸162的同時,該第一卷軸160應相對於所述生長基底140a的曲面不斷平行移動,從而從所述螺旋狀生長基底140a的開口144a進入該間隙146a。該第二卷軸162可隨同第一卷軸160相對於生長基底140a的曲面不斷平行移動。可以理解,該間隙146的寬度應能足以容納該捲繞於第一卷軸160的層狀基底170以及該第二卷軸162。通過移動該層狀基底170,從而維持拉取方向與生長基底140a的角度不變,並使所述第一卷軸160與所述界線122a等速移動,進而將整個奈米碳管陣列120a拉取完畢。As the carbon nanotube segments 143 are successively pulled out from the carbon nanotube array 120a, the area of the carbon nanotube array 120a is continuously reduced, and the carbon nanotube array 120a and the nanotube are The boundary line 122a between the carbon tube films 100 constantly moves. Therefore, in step 4, while the layered substrate 170 is wound around the second reel 162, the first reel 160 should be continuously moved in parallel with respect to the curved surface of the growth substrate 140a, thereby moving from the spiral growth substrate The opening 144a of the 140a enters the gap 146a. The second reel 162 can be continuously moved in parallel with the curved surface of the first reel 160 relative to the growth substrate 140a. It will be appreciated that the gap 146 should be wide enough to accommodate the layered substrate 170 and the second spool 162 that are wound around the first spool 160. By moving the layered substrate 170, the angle of the pulling direction and the growth substrate 140a are maintained constant, and the first reel 160 and the boundary line 122a are moved at a constant speed, thereby pulling the entire carbon nanotube array 120a. Finished.

由於該層狀基底170的第二表面174與所述奈米碳管膜100易於分離,因此,該捲繞於第二卷軸162上的層狀基底170可被展平,形成一奈米碳管膜100與層狀基底170層叠的雙層結構。Since the second surface 174 of the layered substrate 170 is easily separated from the carbon nanotube film 100, the layered substrate 170 wound on the second reel 162 can be flattened to form a carbon nanotube. A two-layer structure in which the film 100 is laminated with the layered substrate 170.

所述將第一卷軸160及第二卷軸162相對於曲面生長基底移動的方法可應用生長於其它各種曲面生長基底的奈米碳管陣列中。The method of moving the first reel 160 and the second reel 162 relative to the curved growth substrate can be applied to an array of carbon nanotubes grown in various other curved growth substrates.

請參閱圖6,當從一筒狀生長基底140b的內表面142b上生長的奈米碳管陣列120b拉取奈米碳管膜100時,所述拉取奈米碳管膜100的方法可以包括:Referring to FIG. 6, when the carbon nanotube film 100 is pulled from the carbon nanotube array 120b grown on the inner surface 142b of the cylindrical growth substrate 140b, the method of drawing the carbon nanotube film 100 may include :

步驟1:提供一捲繞於一第一卷軸160的層狀基底170以及一第二卷軸162,該層狀基底170具有一第一表面172及一第二表面174,該第一表面172對奈米碳管的黏結力遠大於該第二表面174對奈米碳管的黏結力,該第一卷軸160與第二卷軸162的軸向與所述直線段平行,且一並設置於該筒狀生長基底140b內部;Step 1: providing a layered substrate 170 wound on a first reel 160 and a second reel 162 having a first surface 172 and a second surface 174, the first surface 172 The bonding force of the carbon nanotubes is much larger than the bonding force of the second surface 174 to the carbon nanotubes, and the axial direction of the first reel 160 and the second reel 162 are parallel to the straight line segments, and are disposed in the cylindrical shape together Growing the inside of the substrate 140b;

步驟2:以所述層狀基底170端部的第一表面172接觸所述奈米碳管陣列120b,以選定所述奈米碳管片段143;Step 2: contacting the carbon nanotube array 120b with the first surface 172 of the end of the layered substrate 170 to select the carbon nanotube segment 143;

步驟3:通過將該層狀基底170捲繞至該第二卷軸162,以一定速度向遠離該奈米碳管陣列120b的方向拉取該選定的奈米碳管片段143,從而首尾相連地沿同一方向拉出多個奈米碳管片段143,進而形成所述連續的奈米碳管膜100並覆蓋於該層狀基底170的第一表面172;以及Step 3: By winding the layered substrate 170 to the second reel 162, the selected carbon nanotube segment 143 is pulled away from the carbon nanotube array 120b at a certain speed, thereby connecting end to end. Pulling a plurality of carbon nanotube segments 143 in the same direction to form the continuous carbon nanotube film 100 and covering the first surface 172 of the layered substrate 170;

步驟4:在將層狀基底170捲繞至第二卷軸162的同時,使該第一卷軸160相對於該筒狀生長基底140b的曲面平行移動,維持該第一卷軸160與筒狀生長基底140b的距離基本不變,並沿所述奈米碳管陣列120b消耗的方向運動。Step 4: while the layered substrate 170 is wound to the second reel 162, the first reel 160 is moved in parallel with respect to the curved surface of the cylindrical growth substrate 140b, and the first reel 160 and the cylindrical growth substrate 140b are maintained. The distance is substantially constant and moves in the direction in which the carbon nanotube array 120b is consumed.

可以理解,所述筒狀生長基底不限於圓形筒,該筒狀生長基底的截面也可係橢圓或者具有圓角的其他多邊形等。請參閱圖7,該筒狀生長基底140c還可以爲具有一平行於筒狀生長基底140c軸向的開口的未封閉筒狀生長基底140c,該筒狀生長基底140c的截面爲未封閉的圓形。所述奈米碳管陣列也不限於生長在所述筒狀生長基底的內表面,當生長於筒狀生長基底的外表面時,也可依照上述方法邊拉取所述奈米碳管膜100,邊將所述奈米碳管膜100覆蓋於層狀基底170表面。It is to be understood that the cylindrical growth substrate is not limited to a circular cylinder, and the cross section of the cylindrical growth substrate may be an ellipse or other polygon having rounded corners or the like. Referring to FIG. 7, the cylindrical growth substrate 140c may also be an unclosed cylindrical growth substrate 140c having an opening parallel to the axial direction of the cylindrical growth substrate 140c, the cylindrical growth substrate 140c having an unclosed circular cross section. . The carbon nanotube array is also not limited to being grown on the inner surface of the cylindrical growth substrate. When growing on the outer surface of the cylindrical growth substrate, the carbon nanotube film 100 may be pulled according to the above method. The carbon nanotube film 100 is covered on the surface of the layered substrate 170.

在從上述各種生長基底的曲面上的奈米碳管陣列上拉取奈米碳管膜時,通過移動所述第一卷軸160使所述奈米碳管片段143始終傾斜的被拉出。具體地,在拉伸過程中,所述奈米碳管膜100一端與所述層狀基底170連接,另一端與所述曲面狀奈米碳管陣列120b連接,在奈米碳管膜100與曲面狀奈米碳管陣列120b連接處,所述奈米碳管膜100與所述生長基底140b的切面成一小於90度的夾角,優選小於30度。When the carbon nanotube film is pulled from the carbon nanotube array on the curved surface of each of the above-mentioned growth substrates, the carbon nanotube segments 143 are pulled out at all times by moving the first reel 160. Specifically, in the stretching process, one end of the carbon nanotube film 100 is connected to the layered substrate 170, and the other end is connected to the curved carbon nanotube array 120b, and the carbon nanotube film 100 is At the junction of the curved carbon nanotube array 120b, the carbon nanotube film 100 forms an angle of less than 90 degrees with the cut surface of the growth substrate 140b, preferably less than 30 degrees.

可以理解,所述邊拉取形成奈米碳管膜100的同時邊將奈米碳管膜100覆蓋於層狀基底170表面的方法可應用於其它形狀的曲面生長基底,如波浪狀生長基底120、彈簧狀生長基底或柱狀生長基底等。It can be understood that the method of covering the surface of the layered substrate 170 while forming the carbon nanotube film 100 while the side is drawn can be applied to a curved growth substrate of other shapes, such as the wavy growth substrate 120. , a spring-like growth substrate or a columnar growth substrate, and the like.

另外,本發明實施例還提供另一種從曲面狀奈米碳管陣列拉取奈米碳管膜的方法,該方法同樣適用於具有複雜曲面的奈米碳管陣列,如生長於所述螺旋狀生長基底140a表面的奈米碳管陣列120a。請參閱圖8,該方法包括以下步驟:In addition, the embodiment of the present invention further provides another method for drawing a carbon nanotube film from a curved carbon nanotube array, which is also applicable to a carbon nanotube array having a complex curved surface, such as growing in the spiral shape. The carbon nanotube array 120a on the surface of the growth substrate 140a is grown. Referring to Figure 8, the method includes the following steps:

提供多個第三卷軸182以及一層狀基底170a;Providing a plurality of third reels 182 and a layered substrate 170a;

將該多個第三卷軸182平行於所述螺旋狀生長基底140a的曲面142a設置;The plurality of third reels 182 are disposed parallel to the curved surface 142a of the spiral growth substrate 140a;

將該層狀基底170a依次通過該多個第三卷軸182表面沿一U形路徑運動,該U形路徑由一去路徑、一頂點及一回路徑組成,該層狀基底170a在去路徑部分沿進入所述間隙146a的方向運動,並繞過所述頂點,在回路徑部分向從所述開口144a向外的方向運動;以及The layered substrate 170a is sequentially moved along a U-shaped path through the surface of the plurality of third reels 182. The U-shaped path is composed of a de-route, a vertex and a back path, and the layered substrate 170a is along the path of the de-path Moving into the direction of the gap 146a and bypassing the apex, moving in a direction away from the opening 144a at the return path portion;

採用一拉伸工具從所述生長於螺旋狀生長基底140a的曲面142a的奈米碳管陣列120a拉取一奈米碳管膜100,並將該奈米碳管膜100鋪設於所述層狀基底170a表面,通過移動所述多個第三卷軸182,使所述層狀基底170a沿所述U形路徑運動的同時,沿所述奈米碳管陣列120a消耗的方向從所述開口144a進入所述間隙146a,從而使更多奈米碳管膜100從所述奈米碳管陣列120a中拉出並鋪設於所述層狀基底170a表面。A carbon nanotube film 100 is drawn from the carbon nanotube array 120a of the curved surface 142a grown on the spiral growth substrate 140a by a stretching tool, and the carbon nanotube film 100 is laid on the layered layer. The surface of the substrate 170a is moved from the opening 144a in a direction in which the carbon nanotube array 120a is consumed while moving the plurality of third reels 182 to move the layered substrate 170a along the U-shaped path. The gap 146a is such that more carbon nanotube film 100 is pulled out from the carbon nanotube array 120a and laid on the surface of the layered substrate 170a.

該多個第三卷軸182可平行於定義所述曲面142a的直線段設置。該多個第三卷軸182起到支撑所述層狀基底170a的作用,同時通過平行於所述螺旋狀生長基底140a的曲面142a運動,緩慢的把所述層狀基底170a運送至所述螺旋狀生長基底140a的內部,從而保證生長於螺旋狀生長基底140a內部的奈米碳管能够順利地被拉出。所述層狀基底170a在去路徑和回路徑的運動方向相反。所述層狀基底170a在沿所述U形路徑運動的同時,從所述開口144a在所述間隙146a中運動並進入螺旋狀生長基底140a中心。可以理解,該多個第三卷軸182的運動速度與所述奈米碳管陣列120a的消耗速度基本相等。在所述拉取的過程中,仍應保持所述奈米碳管以一定角度從所述奈米碳管陣列120a中被拉出,即在奈米碳管膜100與曲面狀奈米碳管陣列120a連接處,所述奈米碳管膜100與所述生長基底140a的切面夾角小於90度,優選小於30度。The plurality of third reels 182 can be disposed parallel to a straight line segment defining the curved surface 142a. The plurality of third reels 182 function to support the layered substrate 170a while slowly moving the layered substrate 170a to the spiral by moving parallel to the curved surface 142a of the spiral growth substrate 140a. The inside of the substrate 140a is grown to ensure that the carbon nanotubes grown inside the spiral growth substrate 140a can be smoothly pulled out. The layered substrate 170a is opposite in direction of movement of the de-route and return paths. The layered substrate 170a moves from the opening 144a in the gap 146a and enters the center of the spiral growth substrate 140a while moving along the U-shaped path. It can be understood that the movement speed of the plurality of third reels 182 is substantially equal to the consumption speed of the carbon nanotube array 120a. During the drawing, the carbon nanotubes should still be pulled out from the carbon nanotube array 120a at an angle, that is, in the carbon nanotube film 100 and the curved carbon nanotubes. At the junction of the array 120a, the carbon nanotube film 100 is at an angle of less than 90 degrees, preferably less than 30 degrees, to the facet of the growth substrate 140a.

該層狀基底170a爲一柔性基底,如柔性聚合物膜、金屬箔或紙。該層狀基底170a的寬度可與所述螺旋狀生長基底140a曲面的直線段的長度相等,該層狀基底170a的長度不限,可足够長,以使所有拉出的奈米碳管膜100均能鋪設於層狀基底170a表面。The layered substrate 170a is a flexible substrate such as a flexible polymer film, metal foil or paper. The width of the layered substrate 170a may be equal to the length of the straight line segment of the curved surface of the spiral growth substrate 140a, and the length of the layered substrate 170a is not limited and may be long enough for all the drawn carbon nanotube film 100 Both can be laid on the surface of the layered substrate 170a.

可以理解,上述通過第三卷軸182輸送層狀基底170a從曲面上生長的奈米碳管陣列120a中拉取奈米碳管膜100的方法不限於從所述螺旋狀生長基底140a表面拉取奈米碳管膜100,本領域技術人員可以容易地將該方法應用於從任何由一直線段沿一曲線軌迹運動定義的曲面上的奈米碳管陣列中拉取奈米碳管膜。It can be understood that the method of pulling the carbon nanotube film 100 from the carbon nanotube array 120a grown on the curved surface by the transport of the layered substrate 170a by the third reel 182 is not limited to pulling the naphthalene from the surface of the spiral growth substrate 140a. The carbon nanotube film 100, which one skilled in the art can readily apply, pulls the carbon nanotube film from any array of carbon nanotubes on a curved surface defined by a straight line along a curved path motion.

由於該生長基底可以具有較大的用於生長奈米碳管陣列的表面積,與平面生長基底比較,在現有的相同反應爐中,可充分利用反應爐內的空間,生長出較大尺寸的奈米碳管陣列,從而使從該奈米碳管陣列中拉取獲得的奈米碳管膜具有較大的面積。該具有較大寬度的奈米碳管膜可作爲透明導電膜方便地應用於面積較大的觸膜屏及液晶顯示器等裝置中。Since the growth substrate can have a large surface area for growing the carbon nanotube array, in the same reaction furnace as in the prior art, the space inside the reactor can be fully utilized to grow a larger size. The carbon nanotube array is such that the carbon nanotube film obtained from the carbon nanotube array has a large area. The carbon nanotube film having a large width can be conveniently used as a transparent conductive film in a device having a large touch screen and a liquid crystal display.

綜上所述,本發明確已符合發明專利之要件,遂依法提出專利申請。惟,以上所述者僅為本發明之較佳實施例,自不能以此限制本案之申請專利範圍。舉凡習知本案技藝之人士援依本發明之精神所作之等效修飾或變化,皆應涵蓋於以下申請專利範圍內。In summary, the present invention has indeed met the requirements of the invention patent, and has filed a patent application according to law. However, the above description is only a preferred embodiment of the present invention, and it is not possible to limit the scope of the patent application of the present invention. Equivalent modifications or variations made by those skilled in the art in light of the spirit of the invention are intended to be included within the scope of the following claims.

100‧‧‧奈米碳管膜100‧‧‧Nano carbon nanotube film

120, 120a, 120b‧‧‧奈米碳管陣列120, 120a, 120b‧‧‧n carbon nanotube array

122a‧‧‧界線122a‧‧

140, 140a, 140b, 140c‧‧‧生長基底140, 140a, 140b, 140c‧‧‧ growth substrate

142, 142a, 142c‧‧‧曲面142, 142a, 142c‧‧‧ surface

142b‧‧‧內表面142b‧‧‧ inner surface

143‧‧‧奈米碳管片段143‧‧‧Nano carbon nanotube fragments

144a‧‧‧開口144a‧‧‧ openings

145‧‧‧奈米碳管145‧‧・Nano carbon tube

146a‧‧‧間隙146a‧‧‧ gap

160‧‧‧第一卷軸160‧‧‧First scroll

162‧‧‧第二卷軸162‧‧‧second reel

170, 170a‧‧‧層狀基底170, 170a‧‧‧ layered substrate

172‧‧‧第一表面172‧‧‧ first surface

174‧‧‧第二表面174‧‧‧ second surface

182‧‧‧第三卷軸182‧‧‧ third reel

圖1係本發明實施例一種形成於波浪狀基底的奈米碳管陣列的結構示意圖。1 is a schematic view showing the structure of a carbon nanotube array formed on a wavy substrate according to an embodiment of the present invention.

圖2係本發明實施例一種從形成於螺旋狀基底的奈米碳管陣列中拉取奈米碳管膜的側視結構示意圖。2 is a schematic side view showing a structure in which a carbon nanotube film is drawn from a carbon nanotube array formed on a spiral substrate according to an embodiment of the present invention.

圖3係圖2的局部放大示意圖。Figure 3 is a partial enlarged view of Figure 2.

圖4係一奈米碳管片段的結構示意圖。Figure 4 is a schematic view showing the structure of a carbon nanotube segment.

圖5係本發明實施例奈米碳管膜的掃描電鏡照片。Figure 5 is a scanning electron micrograph of a carbon nanotube film of an embodiment of the present invention.

圖6係本發明實施例一種從形成於筒狀基底內表面的奈米碳管陣列中拉取奈米碳管膜的側視結構示意圖。Fig. 6 is a schematic side view showing the structure of a carbon nanotube film drawn from an inner carbon nanotube array formed on the inner surface of a cylindrical substrate according to an embodiment of the present invention.

圖7係本發明實施例一種從形成於具有開口的筒狀基底內表面的奈米碳管陣列中拉取奈米碳管膜的側視結構示意圖。Figure 7 is a side elevational view showing the embodiment of the present invention for drawing a carbon nanotube film from a carbon nanotube array formed on the inner surface of an open cylindrical substrate.

圖8係本發明實施例另一種從形成於螺旋狀基底的奈米碳管陣列中拉取奈米碳管膜的側視結構示意圖。Fig. 8 is a schematic side view showing another embodiment of the present invention for drawing a carbon nanotube film from a carbon nanotube array formed on a spiral substrate.

120‧‧‧奈米碳管陣列 120‧‧‧Nano Carbon Tube Array

140‧‧‧生長基底 140‧‧‧ Growth substrate

142‧‧‧曲面 142‧‧‧ Surface

Claims (20)

一種奈米碳管膜的製備方法,其包括以下步驟:
提供一曲面狀奈米碳管陣列;
採用一拉伸工具從所述奈米碳管陣列中選定一奈米碳管片段;以及
向遠離該曲面狀奈米碳管陣列的方向移動該拉伸工具拉取該選定的奈米碳管片段,使奈米碳管首尾相連地被連續拉出,從而形成一連續的奈米碳管膜。
A method for preparing a carbon nanotube film, comprising the steps of:
Providing a curved carbon nanotube array;
Selecting a carbon nanotube segment from the array of carbon nanotubes using a stretching tool; and moving the stretching tool to pull the selected carbon nanotube segment away from the curved carbon nanotube array The carbon nanotubes are continuously pulled out end to end to form a continuous carbon nanotube film.
如申請專利範圍第1項所述的奈米碳管膜的製備方法,其中,所述曲面狀奈米碳管陣列生長於一生長基底的曲面。The method for producing a carbon nanotube film according to claim 1, wherein the curved carbon nanotube array is grown on a curved surface of a growth substrate. 如申請專利範圍第2項所述的奈米碳管膜的製備方法,其中,在拉伸過程中,所述奈米碳管膜一端與所述拉伸工具連接,另一端與所述曲面狀奈米碳管陣列連接,在奈米碳管膜與曲面狀奈米碳管陣列連接處,所述奈米碳管膜與所述生長基底的切面成一小於90度的夾角。The method for producing a carbon nanotube film according to claim 2, wherein, in the stretching process, one end of the carbon nanotube film is connected to the stretching tool, and the other end is curved The carbon nanotube array is connected at a junction of the carbon nanotube film and the curved carbon nanotube array, the carbon nanotube film forming an angle of less than 90 degrees with the cut surface of the growth substrate. 如申請專利範圍第3項所述的奈米碳管膜的製備方法,其中,所述夾角小於30度。The method for producing a carbon nanotube film according to claim 3, wherein the angle is less than 30 degrees. 如申請專利範圍第2項所述的奈米碳管膜的製備方法,其中,所述奈米碳管陣列的製備方法包括以下步驟:
提供所述生長基底,該生長基底具有所述曲面;
在該生長基底的曲面上均勻形成一催化劑層;以及
採用化學氣相沈積法在生長基底的曲面上生長超順排奈米碳管奈米碳管陣列。
The method for preparing a carbon nanotube film according to claim 2, wherein the method for preparing the carbon nanotube array comprises the following steps:
Providing the growth substrate, the growth substrate having the curved surface;
A catalyst layer is uniformly formed on the curved surface of the growth substrate; and a super-aligned carbon nanotube carbon nanotube array is grown on the curved surface of the growth substrate by chemical vapor deposition.
如申請專利範圍第5項所述的奈米碳管膜的製備方法,其中,所述生長基底爲石英基底、耐高溫玻璃基底、P型矽基底、N型矽基底、耐高溫金屬基底或形成有氧化層的矽基底。The method for preparing a carbon nanotube film according to claim 5, wherein the growth substrate is a quartz substrate, a high temperature resistant glass substrate, a P-type germanium substrate, an N-type germanium substrate, a high temperature resistant metal substrate, or a formation. A ruthenium substrate with an oxide layer. 如申請專利範圍第2項所述的奈米碳管膜的製備方法,其中,所述曲面爲具有一定長度的動直線段沿一曲線軌迹平行移動所形成的面。The method for preparing a carbon nanotube film according to claim 2, wherein the curved surface is a surface formed by moving a straight line segment having a certain length in parallel along a curved trajectory. 如申請專利範圍第7項所述的奈米碳管膜的製備方法,其中,所述選定的奈米碳管片段位於所述曲面中所述直線段所在的邊緣,所述拉伸工具沿垂直於該直線段的方向遠離所述奈米碳管陣列移動。The method for preparing a carbon nanotube film according to claim 7, wherein the selected carbon nanotube segment is located at an edge of the curved line where the straight line segment is located, and the stretching tool is vertical Moving away from the array of carbon nanotubes in the direction of the straight line segment. 如申請專利範圍第7項所述的奈米碳管膜的製備方法,其中,所述採用拉伸工具從奈米碳管陣列中拉取獲得奈米碳管膜的方法進一步包括以下步驟:
提供一捲繞於一第一卷軸的層狀基底,該層狀基底具有一第一表面及一第二表面,該第一表面對奈米碳管的黏結力遠大於該第二表面對奈米碳管的黏結力,該第一卷軸的軸向與所述直線段平行;
以該層狀基底端部的第一表面接觸部分所述奈米碳管陣列,以選定所述奈米碳管片段;以及
轉動所述第一卷軸,使層狀基底逐漸脫離第一卷軸,並向遠離該奈米碳管陣列的方向拉取該選定的奈米碳管片段,奈米碳管首尾相連地被拉出,進而形成所述連續的奈米碳管膜並覆蓋於該層狀基底的第一表面。
The method for preparing a carbon nanotube film according to claim 7, wherein the method for extracting a carbon nanotube film from the carbon nanotube array by using a stretching tool further comprises the following steps:
Providing a layered substrate wound on a first reel having a first surface and a second surface, the first surface having a bonding force to the carbon nanotubes being much larger than the second surface to the nanometer a bonding force of the carbon tube, the axial direction of the first reel being parallel to the straight line segment;
Contacting a portion of the carbon nanotube array with a first surface of the end of the layered substrate to select the carbon nanotube segment; and rotating the first reel to gradually separate the layered substrate from the first reel and Pulling the selected carbon nanotube segments away from the array of carbon nanotubes, the carbon nanotubes are pulled out end to end to form the continuous carbon nanotube film and covering the layered substrate The first surface.
如申請專利範圍第9項所述的奈米碳管膜的製備方法,其中,進一步提供一第二卷軸,將覆蓋有奈米碳管膜的層狀基底捲繞在該第二卷軸上。The method for producing a carbon nanotube film according to claim 9, wherein a second reel is further provided, and the layered substrate covered with the carbon nanotube film is wound on the second reel. 如申請專利範圍第10項所述的奈米碳管膜的製備方法,其中,在將所述層狀基底捲繞至所述第二卷軸的同時,所述第一卷軸與第二卷軸共同相對於該生長基底的曲面平行移動。The method for producing a carbon nanotube film according to claim 10, wherein the first reel and the second reel are mutually opposed while the layered substrate is wound to the second reel The curved surface of the growth substrate moves in parallel. 如申請專利範圍第11項所述的奈米碳管膜的製備方法,其中,所述生長基底爲螺旋狀生長基底,所述曲面爲具一定寬度的直線段沿一平面螺旋線軌迹平行移動形成的面,該螺旋狀生長基底具有一在平面螺旋線朝外的一端的開口,以及由該螺旋狀生長基底定義的間隙,該間隙從該開口延伸至該螺旋狀生長基底中心,在拉伸過程中,所述第一卷軸與第二卷軸共同從所述螺旋狀生長基底的開口進入所述間隙,並相對於該螺旋狀生長基底的曲面平行移動。The method for preparing a carbon nanotube film according to claim 11, wherein the growth substrate is a spiral growth substrate, and the curved surface is a linear segment having a certain width and moves parallel along a planar spiral track. a surface of the spiral growth substrate having an opening at an outward end of the planar spiral, and a gap defined by the spiral growth substrate, the gap extending from the opening to the center of the spiral growth substrate during the stretching process The first reel and the second reel enter the gap from the opening of the spiral growth substrate and move in parallel with respect to the curved surface of the spiral growth substrate. 如申請專利範圍第11項所述的奈米碳管膜的製備方法,其中,所述生長基底爲筒狀生長基底,所述曲面爲筒狀生長基底的內表面,該第一卷軸與第二卷軸的軸向與所述直線段平行,且一並設置於該筒狀生長基底內部,該第一卷軸距離曲面的距離基本維持不變,並沿奈米碳管陣列消耗的方向運動。The method for preparing a carbon nanotube film according to claim 11, wherein the growth substrate is a cylindrical growth substrate, the curved surface is an inner surface of a cylindrical growth substrate, and the first reel and the second The axial direction of the reel is parallel to the straight line segment and is disposed inside the cylindrical growth substrate. The distance of the first reel from the curved surface is substantially constant and moves in the direction in which the carbon nanotube array is consumed. 如申請專利範圍第9項所述的奈米碳管膜的製備方法,其中,所述層狀基底的材料爲塑膠、樹脂、金屬箔或紙。The method for preparing a carbon nanotube film according to claim 9, wherein the material of the layered substrate is plastic, resin, metal foil or paper. 如申請專利範圍第9項所述的奈米碳管膜的製備方法,其中,所述層狀基底的第二表面形成有一矽、石蠟或特氟隆塗層。The method for producing a carbon nanotube film according to claim 9, wherein the second surface of the layered substrate is formed with a ruthenium, a paraffin or a Teflon coating. 如申請專利範圍第9項所述的奈米碳管膜的製備方法,其中,所述層狀基底的第一表面具有一膠黏層。The method for producing a carbon nanotube film according to claim 9, wherein the first surface of the layered substrate has an adhesive layer. 如申請專利範圍第9項所述的奈米碳管膜的製備方法,其中,所述選定的奈米碳管片段與所述第一卷軸的軸線基本平行。The method for producing a carbon nanotube film according to claim 9, wherein the selected carbon nanotube segment is substantially parallel to an axis of the first reel. 如申請專利範圍第7項所述的奈米碳管膜的製備方法,其中,所述採用拉伸工具從奈米碳管陣列中拉取獲得奈米碳管膜的方法進一步包括以下步驟:
提供多個第三卷軸以及一層狀基底;
將該多個第三卷軸平行於所述生長基底的曲面設置;
將該層狀基底依次通過該多個第三卷軸表面沿一U形路徑運動,該U形路徑由一去路徑、一頂點及一回路徑組成,該層狀基底在去路徑和回路徑的運動方向相反;
將所述從曲面狀奈米碳管陣列中拉取的奈米碳管膜鋪設於所述層狀基底表面,通過移動所述多個第三卷軸,使所述層狀基底沿所述U形路徑運動的同時,沿奈米碳管陣列消耗的方向運動,從而使奈米碳管膜從所述奈米碳管陣列中拉出並鋪設於所述層狀基底表面。
The method for preparing a carbon nanotube film according to claim 7, wherein the method for extracting a carbon nanotube film from the carbon nanotube array by using a stretching tool further comprises the following steps:
Providing a plurality of third reels and a layered substrate;
Setting the plurality of third reels parallel to a curved surface of the growth substrate;
The layered substrate is sequentially moved along the U-shaped path through the plurality of third reel surfaces, the U-shaped path is composed of a de-route, a vertex and a back path, and the movement of the layered substrate in the de-path and the return path In the opposite direction;
Laminating the carbon nanotube film drawn from the curved carbon nanotube array on the surface of the layered substrate, and moving the plurality of third reels to form the layered substrate along the U shape While the path moves, it moves in the direction in which the carbon nanotube array is consumed, so that the carbon nanotube film is pulled out from the array of carbon nanotubes and laid on the surface of the layered substrate.
如申請專利範圍第18項所述的奈米碳管膜的製備方法,其中,所述生長基底爲螺旋狀生長基底,所述曲面爲具一定寬度的直線段沿一平面螺旋線軌迹平行移動形成的面,該螺旋狀生長基底具有一在平面螺旋線朝外的一端的開口,以及由該螺旋狀生長基底定義的間隙,該間隙從該開口延伸至該螺旋狀生長基底中心,該層狀基底在去路徑部分沿進入所述間隙的方向運動,並繞過所述頂點,在回路徑部分向從所述開口向外的方向運動,所述多個第三卷軸沿所述奈米碳管陣列消耗的方向從所述開口進入所述間隙。The method for preparing a carbon nanotube film according to claim 18, wherein the growth substrate is a spiral growth substrate, and the curved surface is a linear segment having a certain width and moves parallel along a planar spiral track. a surface of the spiral growth substrate having an opening at an outward end of the planar spiral, and a gap defined by the spiral growth substrate, the gap extending from the opening to a center of the spiral growth substrate, the layered substrate Moving in the direction of entering the gap in the de-path portion and bypassing the apex, moving in a direction outward from the opening in the return path portion, the plurality of third reels along the carbon nanotube array The direction of consumption enters the gap from the opening. 如申請專利範圍第1項所述的奈米碳管膜的製備方法,其中,所述奈米碳管片段爲一個奈米碳管或多個基本相互平行的奈米碳管組成的一束奈米碳管。The method for preparing a carbon nanotube film according to claim 1, wherein the carbon nanotube segment is a carbon nanotube or a bundle of substantially parallel carbon nanotubes. Carbon tube.
TW099102180A 2010-01-26 2010-01-26 Method for preparing nano carbon tube film TWI462872B (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
TW099102180A TWI462872B (en) 2010-01-26 2010-01-26 Method for preparing nano carbon tube film

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
TW099102180A TWI462872B (en) 2010-01-26 2010-01-26 Method for preparing nano carbon tube film

Publications (2)

Publication Number Publication Date
TW201125808A TW201125808A (en) 2011-08-01
TWI462872B true TWI462872B (en) 2014-12-01

Family

ID=45024298

Family Applications (1)

Application Number Title Priority Date Filing Date
TW099102180A TWI462872B (en) 2010-01-26 2010-01-26 Method for preparing nano carbon tube film

Country Status (1)

Country Link
TW (1) TWI462872B (en)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2015077629A1 (en) 2013-11-21 2015-05-28 Atom Nanoelectronics, Inc. Devices, structures, materials and methods for vertical light emitting transistors and light emitting displays
US10541374B2 (en) * 2016-01-04 2020-01-21 Carbon Nanotube Technologies, Llc Electronically pure single chirality semiconducting single-walled carbon nanotube for large scale electronic devices
US10847757B2 (en) 2017-05-04 2020-11-24 Carbon Nanotube Technologies, Llc Carbon enabled vertical organic light emitting transistors
WO2020142770A1 (en) 2019-01-04 2020-07-09 Atom Optoelectronics, Llc Carbon nanotube based radio frequency devices

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2003119012A (en) * 2001-10-16 2003-04-23 Hiroshi Takigawa Machine for continuously forming carbon nanotube
JP2005060131A (en) * 2003-08-20 2005-03-10 Hitachi Zosen Corp Carbon nanotube production equipment
JP2007200564A (en) * 2006-01-23 2007-08-09 Mitsubishi Electric Corp Manufacturing method of electron emission source
US20080170982A1 (en) * 2004-11-09 2008-07-17 Board Of Regents, The University Of Texas System Fabrication and Application of Nanofiber Ribbons and Sheets and Twisted and Non-Twisted Nanofiber Yarns
JP2009161399A (en) * 2008-01-07 2009-07-23 Bridgestone Corp Apparatus and method for producing carbon nanotube

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2003119012A (en) * 2001-10-16 2003-04-23 Hiroshi Takigawa Machine for continuously forming carbon nanotube
JP2005060131A (en) * 2003-08-20 2005-03-10 Hitachi Zosen Corp Carbon nanotube production equipment
US20080170982A1 (en) * 2004-11-09 2008-07-17 Board Of Regents, The University Of Texas System Fabrication and Application of Nanofiber Ribbons and Sheets and Twisted and Non-Twisted Nanofiber Yarns
JP2007200564A (en) * 2006-01-23 2007-08-09 Mitsubishi Electric Corp Manufacturing method of electron emission source
JP2009161399A (en) * 2008-01-07 2009-07-23 Bridgestone Corp Apparatus and method for producing carbon nanotube

Also Published As

Publication number Publication date
TW201125808A (en) 2011-08-01

Similar Documents

Publication Publication Date Title
CN102092701B (en) Method for preparing carbon nanotube film
US8431066B2 (en) Method for making carbon nanotube film
JP5336419B2 (en) Carbon nanotube film, method for producing the same, and light emitting device
JP5059834B2 (en) Carbon nanotube structure
TWI608994B (en) Carbon fiber film
US8623258B2 (en) Method for making carbon nanotube film
JP5255021B2 (en) Carbon nanotube structure having protective structure and method for producing the same
CN101734644B (en) Method for stretching carbon nano-tube films
JP5059833B2 (en) Carbon nanotube structure
CN105439114B (en) Carbon-fiber film and preparation method thereof
TWI477442B (en) Method for making carbon nanotube film
JP2009091240A (en) Carbon nanotube film manufacturing apparatus and manufacturing method thereof
US20100301518A1 (en) Device and method for making carbon nanotube film
US20110142744A1 (en) Method for making carbon nanotube structure
TWI462872B (en) Method for preparing nano carbon tube film
CN102092670B (en) Carbon nanotube composite structure and preparation method thereof
TWI395708B (en) Method for stretching carbon nanotube film
TWI478866B (en) Carbon nanotube film
TW201125814A (en) Method for making carbon nanotube structure
CN107400872A (en) The preparation method of carbon-fiber film
KR20110046102A (en) Carbon nanotube film and its manufacturing method
TWI464107B (en) Method for preparing nano carbon tube structure
KR101304339B1 (en) A method for manufacturing carbon nano tubes sheet structure and the carbon nano tubes sheet structure

Legal Events

Date Code Title Description
MM4A Annulment or lapse of patent due to non-payment of fees