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TWI456663B - 顯示裝置之製造方法 - Google Patents

顯示裝置之製造方法 Download PDF

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Publication number
TWI456663B
TWI456663B TW097126077A TW97126077A TWI456663B TW I456663 B TWI456663 B TW I456663B TW 097126077 A TW097126077 A TW 097126077A TW 97126077 A TW97126077 A TW 97126077A TW I456663 B TWI456663 B TW I456663B
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TW
Taiwan
Prior art keywords
forming
semiconductor film
over
electrode
display device
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TW097126077A
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English (en)
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TW200919590A (en
Inventor
Hidekazu Miyairi
Yasuhiro Jinbo
Kosei Nei
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Semiconductor Energy Lab
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Publication of TWI456663B publication Critical patent/TWI456663B/zh

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Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6729—Thin-film transistors [TFT] characterised by the electrodes
    • H10D30/673—Thin-film transistors [TFT] characterised by the electrodes characterised by the shapes, relative sizes or dispositions of the gate electrodes
    • H10D30/6732—Bottom-gate only TFTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H10D30/031—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT]
    • H10D30/0312—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT] characterised by the gate electrodes
    • H10D30/0316—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT] characterised by the gate electrodes of lateral bottom-gate TFTs comprising only a single gate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H10D30/031—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT]
    • H10D30/0321—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT] comprising silicon, e.g. amorphous silicon or polysilicon
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6729—Thin-film transistors [TFT] characterised by the electrodes
    • H10D30/6737—Thin-film transistors [TFT] characterised by the electrodes characterised by the electrode materials
    • H10D30/6739—Conductor-insulator-semiconductor electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/674—Thin-film transistors [TFT] characterised by the active materials
    • H10D30/6741—Group IV materials, e.g. germanium or silicon carbide
    • H10D30/6743—Silicon
    • H10D30/6745—Polycrystalline or microcrystalline silicon
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6757—Thin-film transistors [TFT] characterised by the structure of the channel, e.g. transverse or longitudinal shape or doping profile
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/01—Manufacture or treatment
    • H10D86/021—Manufacture or treatment of multiple TFTs
    • H10D86/0221—Manufacture or treatment of multiple TFTs comprising manufacture, treatment or patterning of TFT semiconductor bodies
    • H10D86/0223—Manufacture or treatment of multiple TFTs comprising manufacture, treatment or patterning of TFT semiconductor bodies comprising crystallisation of amorphous, microcrystalline or polycrystalline semiconductor materials
    • H10D86/0229—Manufacture or treatment of multiple TFTs comprising manufacture, treatment or patterning of TFT semiconductor bodies comprising crystallisation of amorphous, microcrystalline or polycrystalline semiconductor materials characterised by control of the annealing or irradiation parameters
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/01—Manufacture or treatment
    • H10D86/021—Manufacture or treatment of multiple TFTs
    • H10D86/0231—Manufacture or treatment of multiple TFTs using masks, e.g. half-tone masks
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6729—Thin-film transistors [TFT] characterised by the electrodes
    • H10D30/6737—Thin-film transistors [TFT] characterised by the electrodes characterised by the electrode materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/674—Thin-film transistors [TFT] characterised by the active materials
    • H10D30/6741—Group IV materials, e.g. germanium or silicon carbide
    • H10D30/6743—Silicon

Landscapes

  • Thin Film Transistor (AREA)
  • Liquid Crystal (AREA)
  • Devices For Indicating Variable Information By Combining Individual Elements (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Recrystallisation Techniques (AREA)
  • Electroluminescent Light Sources (AREA)
  • Electrodes Of Semiconductors (AREA)

Claims (10)

  1. 一種顯示裝置的製造方法，包括如下步驟：在基板之上形成閘極電極；在該閘極電極之上形成閘極絕緣膜；在該閘極絕緣膜之上形成微晶半導體膜；以雷射光束照射該微晶半導體膜；在進行該照射步驟之後，在該微晶半導體膜之上形成緩衝層；在該緩衝層之上形成添加有賦予一個導電類型的雜質元素的半導體膜；蝕刻該雜質半導體膜和該緩衝層的一部分而使得源極區域及汲極區域係形成自該雜質半導體膜，並且具有凹部的該緩衝層被形成；在該源極區域之上形成源極電極，及在該汲極區域之上形成汲極電極；以及形成與該源極電極及該汲極電極的其中一者相接觸的像素電極。
  2. 一種顯示裝置的製造方法，包括如下步驟：在基板之上形成閘極電極；在該閘極電極之上形成閘極絕緣膜；在該閘極絕緣膜之上形成微晶半導體膜；以雷射光束照射該微晶半導體膜；在進行該照射步驟之後，在該微晶半導體膜之上形成緩衝層； 在該緩衝層之上形成添加有賦予一個導電類型的雜質元素的半導體膜；藉由選擇性地蝕刻該雜質半導體膜以形成源極區域及汲極區域；在形成該源極區域及該汲極區域的步驟之後，選擇性地蝕刻該緩衝層和該微晶半導體膜；在選擇性地蝕刻該緩衝層和該微晶半導體膜的步驟之後，在該源極區域之上形成源極電極及在該汲極區域之上形成汲極電極；以及形成與該源極電極及該汲極電極的其中一者相接觸的像素電極。
  3. 一種顯示裝置的製造方法，包括如下步驟：在基板之上形成閘極電極；在該閘極電極之上形成閘極絕緣膜；在該閘極絕緣膜之上形成微晶半導體膜；以雷射光束照射該微晶半導體膜；在進行該照射步驟之後，在該微晶半導體膜之上形成緩衝層；在該緩衝層之上形成添加有賦予一個導電類型的雜質元素的半導體膜；在該雜質半導體膜之上形成導電膜；藉由進行使用多重色調光罩的微影光刻步驟，以便在該導電膜之上形成第一抗蝕劑掩膜；選擇性地蝕刻該導電膜、該緩衝層、及該微晶半導體 膜；藉由對該第一抗蝕劑掩膜進行灰化處理，以形成第二抗蝕劑掩膜；藉由使用該第二抗蝕劑掩膜來選擇性地蝕刻該導電膜，以形成源極電極及汲極電極；藉由使用該第二抗蝕劑掩膜來選擇性地蝕刻該雜質半導體膜，以便在該源極電極之下形成源極區域及在該汲極電極之下形成汲極區域；以及形成與該源極電極及該汲極電極的其中一者相接觸的像素電極。
  4. 如申請專利範圍第1至3項中任一項所述的顯示裝置的製造方法，還包括如下步驟：在該源極電極及該汲極電極之上形成層間絕緣膜；在該源極電極及該汲極電極的任一者之上形成接觸孔，其中，該像素電極係形成在該層間絕緣膜之上，以便使該像素電極經由該接觸孔而被連接到該源極電極及該汲極電極的該其中一者。
  5. 如申請專利範圍第4項所述的顯示裝置的製造方法，還包括如下步驟：在該源極電極及該汲極電極的另一者之上形成第二接觸孔；在該層間絕緣膜之上形成佈線，該佈線係經由該第二接觸孔而被連接到該源極電及該汲極電極的該另一者。
  6. 如申請專利範圍第1至3項中任一項所述的顯示裝置的製造方法，其中，該微晶半導體膜包括具有粒徑為0.5nm至50nm的半導體結晶。
  7. 如申請專利範圍第1至3項中任一項所述的顯示裝置的製造方法，其中，該緩衝層包括非晶半導體膜。
  8. 如申請專利範圍第1至3項中任一項所述的顯示裝置的製造方法，其中，該緩衝層包括包含氮、氫、氟、氯、溴、或碘的非晶半導體膜。
  9. 如申請專利範圍第1至3項中任一項所述的顯示裝置的製造方法，其中，該顯示裝置為液晶顯示裝置。
  10. 如申請專利範圍第1至3項中任一項所述的顯示裝置的製造方法，其中，該顯示裝置為發光裝置。
TW097126077A 2007-07-20 2008-07-10 顯示裝置之製造方法 TWI456663B (zh)

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TWI456663B true TWI456663B (zh) 2014-10-11

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