TWI447970B - Led apparatus and method for manufacturing the same - Google Patents

Description

Light-emitting diode device and method of manufacturing same

The present invention relates to a semiconductor device and a method of fabricating the same, and more particularly to a light emitting diode device and a method of fabricating the same.

A Light Emitting Diode (LED) is a semiconductor component that converts current into light of a specific wavelength range. With its advantages of high luminous efficiency, small size, light weight and environmental protection, it has been widely used in various fields.

Conventional lensed LED devices typically include an LED package structure having a reflective cup and a lens mounted to the LED package structure. Generally, the lens structure is fixed on the carrier plate or the reflective cup of the LED package structure via a screw or a cassette. However, the fixing method of the lens is cumbersome, and since there is a gap between the lens structure and the reflective cup or the substrate, It is difficult to ensure the sealing. Therefore, further improvement is needed.

In view of the above, it is necessary to provide a light-emitting diode device which is easy to manufacture and has good sealing properties and a method of manufacturing the same.

A light emitting diode device includes a substrate, a conductive layer on which the substrate is attached, a light emitting diode chip disposed on the conductive layer, and an optical portion including a reflective junction Forming a lens structure covering the reflective structure, the optical portion is adhered to a surface of the substrate provided with a conductive layer via a lens structure and covering the light emitting diode wafer, the reflective structure and the substrate and the conductive layer Intersected from each other, the reflective structure is an annular curved side wall, and the reflective structure is completely embedded in the lens structure.

A method for manufacturing a light emitting diode device, the method comprising: providing a substrate, the substrate comprising a first surface and a second surface; forming a conductive layer on the surface of the substrate, the conductive layer comprising a first electrode and a second An electrode, the first electrode and the second electrode are spaced apart from each other and are respectively attached to the first surface and the second surface of the substrate; and a light emitting diode chip is disposed on one of the electrodes, and the light emitting diode wafer is borrowed Electrically connecting with the first electrode and the second electrode electrode by wire bonding or flip chip to form an electrical part; providing a reflective structure, forming a lens structure by injection molding, and coating the lens structure with the reflection Structure, thereby forming an optical portion, the lens structure includes a bonding surface and a light emitting surface, the bonding surface has a regular plane, the light emitting surface has a convex curved surface; and a bonding surface of the lens structure is etched to form a a groove, the end of the edge of the groove is connected to one end of the reflective structure; the optical portion is adhesively connected to the package, so that the groove receives the LED chip, The bonding surface when positioned on both sides of the first electrode portion and the recess and the second electrode are bonded together.

Compared with the prior art, the lens structure of the optical portion encapsulates the reflective structure, so that the structure of the light emitting diode device is simpler, and the reflective structure is completely embedded in the lens structure, and the reflective structure is closely connected with the lens structure. And attaching and fixing the optical portion to the conductive layer via an adhesive, so that the light emitting diode device has good sealing property, and the packaging process is more convenient.

The invention will now be further described with reference to the specific embodiments thereof with reference to the accompanying drawings.

100‧‧‧Lighting diode device

10‧‧‧Electrical Department

20‧‧‧Optical Department

30‧‧‧Substrate

40‧‧‧ Conductive layer

50‧‧‧Light Emitter Wafer

31‧‧‧ first surface

32‧‧‧second surface

41‧‧‧First electrode

42‧‧‧second electrode

411, 421‧‧ ‧ contact segments

412, 422‧‧‧ wiring segments

413, 423‧‧‧ Connection section

51‧‧‧ Gold wire

60‧‧‧ lens structure

70‧‧‧Reflective structure

61‧‧‧Fitting surface

62‧‧‧Glossy surface

611‧‧‧ Groove

612‧‧‧Contact surface

71‧‧‧ bottom

72‧‧‧Top

1 is an exploded perspective view of a light emitting diode device according to an embodiment of the present invention.

2 is a schematic structural view of the light emitting diode device shown in FIG. 1.

FIG. 3 is a schematic structural view of the light emitting diode device of FIG. 1 at another angle.

4 to 9 are schematic views showing the manufacturing steps of the light-emitting diode device shown in FIG. 1.

The invention will be further described in detail below with reference to the accompanying drawings.

FIG. 1 to FIG. 3 show a light emitting diode device 100 according to an embodiment of the present invention. The light emitting diode device 100 includes an electrical part 10 and an optical part 20 covering the electrical part 10 .

The electrical part 10 includes a substrate 30, a conductive layer 40 attached to the substrate 30, and a light-emitting diode wafer 50 disposed on the conductive layer 40. The optical portion 20 is attached to the conductive layer 40 and covers the light emitting diode wafer 50.

Specifically, referring to FIG. 1 , in the embodiment, the substrate 30 has a rectangular parallelepiped shape, and includes a first surface 31 and a second surface 32 . In this embodiment, the first surface 31 is a plane. The substrate 30 is a germanium substrate, a plastic substrate or a ceramic substrate. The substrate 30 may also be made of one or more of the following materials: gallium arsenide (GaAs), zinc oxide (ZnO), and indium phosphide (InP).

Referring to FIG. 2, the conductive layer 40 is attached to the surface of the substrate 30, and includes a first electrode 41 and a second electrode 42. The first electrode 41 and the second electrode 42 are both made of a metal material and bent. The U-shape is folded into a first surface 31 and a second surface 32 of the substrate 30, respectively. The first electrode 41 and the second electrode 42 are spaced apart from each other to avoid a short circuit. Each of the first electrode 41 and the second electrode 42 includes contact segments 411, 421 attached to the second surface 32, wiring segments 412, 422 attached to the first surface 31, and connecting the contact segments 411, 421 and Connection segments 413, 423 of wiring segments 412, 422. The contact segments 411, 421 are for connection to an external circuit (not shown) for inputting electrical energy into the LED array 50. The wiring segments 412, 422 are for electrically connecting to the LED wafer 50 to drive the LED chip 50 to emit light. The segments 412, 422 are parallel to the contact segments 411, 421 and perpendicular to the connecting segments 413, 423.

The light emitting diode chip 50 is disposed on the wiring segment 412 of the first electrode 41. In this embodiment, the LED wafer 50 is located on the side of the wiring segment 412 of the first electrode 41 adjacent to the second electrode 42 segment 422. An insulating material (not shown) is disposed between the LED chip 50 and the first electrode 41. The two electrodes of the LED wafer 50 are respectively connected to the first electrode 41 by two gold wires 51. And the wiring segments 412, 422 of the second electrode 42 to achieve electrical conduction. In other embodiments, the LED wafer 50 may be electrically connected to the first electrode 41 and the second electrode 42 in a flip chip manner.

Referring to FIG. 3 at the same time, the optical portion 20 includes a lens structure 60 and a reflective structure 70, and the lens structure 60 covers the reflective structure 70.

The lens structure 60 includes a bonding surface 61 and a light emitting surface 62. The bonding surface 61 has a regular plane. In the embodiment, the lens structure 60 has the same size as the entire electrical portion 10. That is, the bonding surface 61 of the lens structure 60 covers the entire electrical portion 10. A recess 611 is formed in the middle of the affixing surface 61. The recess 611 is configured to receive and cover the LED chip 50 and the first electrode 41 and the second electrode 42. . The portion of the abutment surface 61 on both sides of the groove 611 includes two contact faces 612 which are symmetrical to each other and to the wire segment 412 of the first electrode 41 and the second electrode 42 by adhesive means. 422 is bonded to each other, so that the lens structure 60 is attached to the substrate 30 via the bonding surface 61 and the conductive layer 40 is formed. surface. The light-emitting surface 62 is a convex curved surface that is in contact with the bonding surface 61 and protrudes toward a side away from the bonding surface 61.

The reflective structure 70 is wrapped in the lens structure 60 and is substantially an annular curved side wall including a bottom end 71 and a top end 72. The bottom end 71 is adjacent to the mating surface 61 of the lens structure 60. And being connected to the bottom edge of the groove 611, the top end 72 is relatively adjacent to the light exit surface 62 of the lens structure 60 and completely covered in the lens structure 60. The reflective structure 70 is diffused from the bottom end 71 toward the top end 72, that is, the radius at the top end 72 of the annular reflective structure 70 is greater than the radius at the bottom end 71. The reflective structure 70 may be made of an LCP (Liquid Crystal Polymer) material or a metal material. In addition, during the production process, plastic particles, ceramic particles or highly volatile solutions may be mixed into the LCP material.

At the time of manufacture, the electrical part 10 and the optical part 20 are first packaged separately, and then fixedly joined together by adhesive means. Hereinafter, the manufacturing process of the light emitting diode device 100 will be described with reference to FIG. 2 by taking the light emitting diode device 100 of the embodiment of the present invention as an example.

In the first step, referring to FIG. 4, a substrate 30 is provided. The substrate 30 has a first surface 31 and a second surface 32. The substrate 30 is a germanium substrate, a plastic substrate or a ceramic substrate, and may be made of one or more of the following materials: gallium arsenide (GaAs), zinc oxide (ZnO), and indium phosphide (InP).

In a second step, referring to FIG. 5, a conductive layer 40 is formed on the surface of the substrate 30. The conductive layer 40 includes a first electrode 41 and a second electrode 42. The first electrode 41 and the second electrode 42 are spaced apart from each other. The first surface 41 and the second surface 32 of the substrate 30 are both disposed on the first surface 31 and the second surface 32 of the substrate 30. The first electrode 41 and the second electrode 42 respectively include contact segments 411 and 421 located on the second surface 32 of the substrate 30 and are located on the first surface of the substrate 30. Wiring segments 412, 422 and connecting the connections The contact segments 411, 421 and the connecting segments 413, 423 of the wiring segments 412, 422 are parallel to the contact segments 411, 421 and perpendicular to the connecting segments 413, 423.

In the third step, referring to FIG. 6, a light-emitting diode wafer 50 is disposed on the wiring segment 412 of the first electrode 41, and electrically connected to the first electrode 41 and the second electrode 42 by wire bonding. connection. It can be understood that in other embodiments, the first electrode 41 and the second electrode 42 may be electrically connected in a flip chip manner.

In a fourth step, referring to FIG. 7, a reflective structure 70 is provided. The reflective structure 70 has a substantially annular curved surface and includes a bottom end 71 and a top end 72. The reflective structure 70 is diffused from the bottom end 71 toward the top end 72. The radius of the top end 72 of the reflective structure 70 is larger than the radius of the bottom end 71. The reflective structure 70 may be made of a liquid crystal polymer material or a metal material.

A lens structure 60 is formed around the reflective structure 70 by injection molding, so that the lens structure 60 completely covers the reflective structure 70 to form an optical portion 20. The lens structure 60 includes a bonding surface 61 and a The light-emitting surface 62 has a regular flat shape, and the light-emitting surface 62 is a convex curved surface; the lens structure 60 has the same size as the entire electrical portion 10, that is, the bonding surface of the lens structure 60. 61 can cover the light exit surface of the entire electrical part 10.

In the fifth step, referring to FIG. 8 , a groove 611 is formed on the bonding surface 61 of the lens structure 60 by an etching technique, so that the bottom edge of the groove 611 is just connected to the bottom end 71 of the reflective structure 70 .

In the sixth step, referring to FIG. 9 , the optical portion 20 is covered on the electrical portion 10 by adhesive means, so that the recess 611 of the lens structure 60 receives the LED wafer 50 while the a portion of the bonding surface 61 on both sides of the recess 611 and the first electrode 41 and the second electrode 42 are attached.

It can be understood that the groove 611 of the lens structure 60 may include a fluorescent glue (not shown), and the fluorescent glue comprises garnet-based phosphor powder, citrate-based phosphor powder, orthosilicate. One or more of a base fluorescent powder, a sulfide-based fluorescent powder, a thiogallate-based fluorescent powder, an oxynitride-based fluorescent powder, and a nitride-based fluorescent powder.

In addition, in the process of forming the optical portion 20, the lens structure 60 and the recess 611 may be formed first, and then the reflective structure 70 is buried in the lens structure 60 via a technique of mold embedding.

Compared with the prior art, the lens structure of the optical portion covers the reflective structure, so that the structure of the light emitting diode device is simpler, and the reflective structure is completely embedded in the lens structure, and the reflective structure is closely connected with the lens structure, and The optical portion is connected and fixed to the conductive layer via an adhesive, so that the light emitting diode device has good sealing property, and the packaging process is simpler.

In summary, the present invention has indeed met the requirements of the invention patent, and has filed a patent application according to law. However, the above description is only a preferred embodiment of the present invention, and it is not possible to limit the scope of the patent application of the present invention. Equivalent modifications or variations made by persons skilled in the art in light of the spirit of the invention are intended to be included within the scope of the following claims.

100‧‧‧Lighting diode device

30‧‧‧Substrate

40‧‧‧ Conductive layer

50‧‧‧Light Emitter Wafer

31‧‧‧ first surface

32‧‧‧second surface

41‧‧‧First electrode

42‧‧‧second electrode

411, 421‧‧ ‧ contact segments

412, 422‧‧‧ wiring segments

413, 423‧‧‧ Connection section

51‧‧‧ Gold wire

60‧‧‧ lens structure

70‧‧‧Reflective structure

62‧‧‧Glossy surface

611‧‧‧ Groove

71‧‧‧ bottom

72‧‧‧Top

Claims (9)

A light emitting diode device comprising a substrate, a conductive layer on which the substrate is attached, a light emitting diode chip disposed on the conductive layer, and an optical portion, wherein the optical portion includes a reflective structure and covers the reflection a lens structure of the structure, the optical portion is adhered to a surface of the substrate provided with a conductive layer via a lens structure and covers the light emitting diode wafer, and the reflective structure is spaced apart from the substrate and the conductive layer, the reflection The structure is an annular curved side wall, and the reflective structure is completely embedded in the lens structure. The illuminating diode device of claim 1, wherein the lens structure comprises a bonding surface and a groove formed on the bonding surface, the bonding surface and the substrate provided with a conductive layer The surface is laminated, and the recess covers the LED chip on the conductive layer. The light-emitting diode device of claim 2, wherein the bonding surface is adhered to the surface of the substrate provided with the conductive layer by an adhesive. The light-emitting diode device of claim 2, wherein the lens structure comprises a light-emitting surface, the light-emitting surface is a convex curved surface, and the light-emitting surface is in contact with the bonding surface and away from the sticker. One side of the face is raised. The light emitting diode device of claim 1, wherein the reflective structure comprises a bottom end adjacent to the groove and a top end adjacent to the light exiting surface, the top end radius being greater than the bottom end radius. The light-emitting diode device of claim 5, wherein the bottom end of the reflective structure is connected to the bottom edge of the groove. A method of manufacturing a light emitting diode device, comprising the steps of: providing a substrate, the substrate comprising a first surface and a second surface; forming a conductive layer on the surface of the substrate, the conductive layer comprising a first electrode and a second An electrode, the first electrode and the second electrode are spaced apart from each other and are respectively attached to the first surface and the second surface of the substrate Providing a light-emitting diode chip disposed on one of the electrodes, the light-emitting diode wafer being electrically connected to the first electrode and the second electrode by wire bonding or flip chip to form an electrical part; a reflective structure, a lens structure is formed by injection molding, and the lens structure is coated with the reflective structure to form an optical portion, the lens structure includes a bonding surface and a light emitting surface; and the lens structure is attached Etching to form a recess, the end of the edge of the recess is connected to one end of the reflective structure; and connecting the optical portion to the electrical portion by means of adhesive, so that the recess accommodates the light emitting diode The wafer is simultaneously bonded to the first electrode and the second electrode at a portion where the bonding surface is located on both sides of the groove. The method for manufacturing a light-emitting diode device according to claim 7, wherein the bonding surface has a regular plane, and the light-emitting surface has a convex curved surface. The method of fabricating a light-emitting diode device according to claim 7, wherein the reflective structure comprises a bottom end and a top end, the top end radius being greater than the bottom end radius.