TWI440969B - Method for making light blocking member array - Google Patents
Method for making light blocking member array Download PDFInfo
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- TWI440969B TWI440969B TW98144050A TW98144050A TWI440969B TW I440969 B TWI440969 B TW I440969B TW 98144050 A TW98144050 A TW 98144050A TW 98144050 A TW98144050 A TW 98144050A TW I440969 B TWI440969 B TW I440969B
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- 229920002120 photoresistant polymer Polymers 0.000 claims description 36
- 238000004519 manufacturing process Methods 0.000 claims description 22
- 238000000034 method Methods 0.000 claims description 22
- 230000002093 peripheral effect Effects 0.000 claims description 15
- 239000010935 stainless steel Substances 0.000 claims description 8
- 229910001220 stainless steel Inorganic materials 0.000 claims description 8
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 7
- 239000010949 copper Substances 0.000 claims description 7
- 229910052802 copper Inorganic materials 0.000 claims description 7
- 238000005530 etching Methods 0.000 claims description 6
- 238000011161 development Methods 0.000 claims description 5
- 238000009826 distribution Methods 0.000 claims description 3
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 claims description 2
- 238000003491 array Methods 0.000 claims description 2
- 229910052804 chromium Inorganic materials 0.000 claims description 2
- 239000011651 chromium Substances 0.000 claims description 2
- 238000010894 electron beam technology Methods 0.000 claims description 2
- 230000003287 optical effect Effects 0.000 claims description 2
- 239000000758 substrate Substances 0.000 claims 2
- CXOWYMLTGOFURZ-UHFFFAOYSA-N azanylidynechromium Chemical compound [Cr]#N CXOWYMLTGOFURZ-UHFFFAOYSA-N 0.000 claims 1
- 239000010410 layer Substances 0.000 description 100
- 239000010408 film Substances 0.000 description 9
- 239000010409 thin film Substances 0.000 description 7
- 239000000463 material Substances 0.000 description 6
- 230000015572 biosynthetic process Effects 0.000 description 3
- 238000003384 imaging method Methods 0.000 description 3
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 2
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 230000005540 biological transmission Effects 0.000 description 2
- 239000003990 capacitor Substances 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 238000001914 filtration Methods 0.000 description 2
- 238000007747 plating Methods 0.000 description 2
- 230000005855 radiation Effects 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 125000006850 spacer group Chemical group 0.000 description 2
- 238000004544 sputter deposition Methods 0.000 description 2
- 238000012546 transfer Methods 0.000 description 2
- 238000007740 vapor deposition Methods 0.000 description 2
- 229910000838 Al alloy Inorganic materials 0.000 description 1
- NRTOMJZYCJJWKI-UHFFFAOYSA-N Titanium nitride Chemical compound [Ti]#N NRTOMJZYCJJWKI-UHFFFAOYSA-N 0.000 description 1
- KCZFLPPCFOHPNI-UHFFFAOYSA-N alumane;iron Chemical compound [AlH3].[Fe] KCZFLPPCFOHPNI-UHFFFAOYSA-N 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- 230000007797 corrosion Effects 0.000 description 1
- 238000005260 corrosion Methods 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 230000002452 interceptive effect Effects 0.000 description 1
- 229910052742 iron Inorganic materials 0.000 description 1
- UGKDIUIOSMUOAW-UHFFFAOYSA-N iron nickel Chemical compound [Fe].[Ni] UGKDIUIOSMUOAW-UHFFFAOYSA-N 0.000 description 1
- 229910001004 magnetic alloy Inorganic materials 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 230000000149 penetrating effect Effects 0.000 description 1
- 229910052573 porcelain Inorganic materials 0.000 description 1
- 239000011241 protective layer Substances 0.000 description 1
- 239000002904 solvent Substances 0.000 description 1
- 238000004528 spin coating Methods 0.000 description 1
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- Optical Elements Other Than Lenses (AREA)
- Shielding Devices Or Components To Electric Or Magnetic Fields (AREA)
Description
本發明涉及一種光學元件製造方法,尤其涉及一種晶圓級(wafer level)遮光元件陣列之製造方法。 The present invention relates to a method of fabricating an optical component, and more particularly to a method of fabricating a wafer level shading element array.
隨著攝像技術之發展,鏡頭模組與各種便攜式電子裝置如行動電話、攝像機、電腦等之結合,更是得到眾多消費者之青睞。故,市場對小型化鏡頭模組之需求增加。 With the development of camera technology, the combination of lens modules and various portable electronic devices such as mobile phones, cameras, computers, etc., has been favored by many consumers. Therefore, the market demand for miniaturized lens modules has increased.
目前小型化鏡頭模組多採用精密模具等製程製造出微型光學元件,然後與矽晶圓製成之影像感測器電連接、封裝,然後切割,得到相機模組。惟,隨著便攜式電子裝置向著更加微小化發展,影像感測器與便攜式電子裝置內之電容、電感等其他電子元器件之間之距離亦越來越短,從而使得影像感測器工作過程中,其被電容、電感等其他電子元器件工作時(即便攜式電子裝置接受或者發射電子信號時)所產生之電磁波干擾之可能亦越來越大,直接導致該相機模組之成像品質降低。 At present, the miniaturized lens module uses a precision mold and other processes to manufacture micro-optical components, and then electrically connects, packages, and then cuts the image sensor made of the silicon wafer to obtain a camera module. However, as portable electronic devices are becoming more compact, the distance between the image sensor and other electronic components such as capacitors and inductors in the portable electronic device is also becoming shorter and shorter, thereby making the image sensor work. The electromagnetic wave interference generated by the operation of other electronic components such as capacitors and inductors (that is, when the portable electronic device receives or transmits an electronic signal) is also becoming more and more serious, which directly leads to a decrease in the imaging quality of the camera module.
有鑒於此,有必要提供一種防電磁波干擾之遮光元件陣列之製造方法。 In view of the above, it is necessary to provide a method of manufacturing a light shielding element array that is resistant to electromagnetic interference.
一種遮光元件陣列之製造方法,包括以下步驟: (1)提供一塊透光平板;(2)於該透光平板上設置遮光層;(3)於該遮光層上形成磁屏蔽層,(4)於該磁屏蔽層上塗敷光阻層,該光阻層包括複數間隔分佈之中央區域及圍繞該複數中央區域之週邊區域;(5)曝光、顯影,以去除該複數中央區域上之光阻;(6)對該磁屏蔽層及遮光層進行蝕刻,以使與該複數中央區域正對之透光平板暴露於外;(7)去除該週邊區域上之光阻,以形成一遮光元件陣列。 A method of manufacturing a light shielding element array, comprising the steps of: (1) providing a light-transmissive plate; (2) providing a light-shielding layer on the light-transmissive plate; (3) forming a magnetic shield layer on the light-shielding layer, and (4) applying a photoresist layer on the magnetic shield layer, The photoresist layer includes a central region of a plurality of spaced apart distributions and a peripheral region surrounding the plurality of central regions; (5) exposing and developing to remove photoresist on the plurality of central regions; and (6) performing the magnetic shield layer and the light shielding layer Etching to expose the light transmissive plate facing the plurality of central regions to the outside; (7) removing the photoresist on the peripheral region to form an array of shading elements.
與先前技術相比,根據本發明所提供之遮光元件陣列製造方法所製得之遮光元件陣列不僅具有遮光功能且可以防止外界電磁干擾,從而可以提高具有該遮光元件陣列之鏡頭模組陣列之成像品質。 Compared with the prior art, the shading element array prepared by the method for manufacturing the shading element array according to the present invention not only has a shading function but also can prevent external electromagnetic interference, thereby improving imaging of the lens module array having the shading element array. quality.
100、300‧‧‧遮光元件陣列 100, 300‧‧‧ shading element array
10‧‧‧透光平板 10‧‧‧Lighting plate
20‧‧‧濾光層 20‧‧‧Filter layer
30‧‧‧遮光屏蔽層 30‧‧‧ shading shield
301‧‧‧遮光層 301‧‧‧Lighting layer
303‧‧‧磁屏蔽層 303‧‧‧Magnetic shielding
305、305a、501‧‧‧通光孔 305, 305a, 501‧‧‧ light hole
3031‧‧‧銅薄膜層 3031‧‧‧ copper film layer
3033‧‧‧不銹鋼薄膜層 3033‧‧‧Stainless steel film layer
101‧‧‧第一表面 101‧‧‧ first surface
102‧‧‧第二表面 102‧‧‧ second surface
40‧‧‧光阻層 40‧‧‧ photoresist layer
401‧‧‧中央區域 401‧‧‧Central area
402‧‧‧週邊區域 402‧‧‧ surrounding area
50‧‧‧光罩 50‧‧‧Photomask
403‧‧‧光阻 403‧‧‧Light resistance
200‧‧‧鏡頭模組陣列 200‧‧‧ lens module array
60、70‧‧‧對位孔 60, 70‧‧‧ alignment holes
400‧‧‧鏡片陣列 400‧‧‧ lens array
80‧‧‧鏡片 80‧‧‧ lenses
90‧‧‧對位結構 90‧‧‧ alignment structure
圖1係本發明第一實施例提供之遮光元件陣列之立體示意圖。 1 is a perspective view of a light shielding element array according to a first embodiment of the present invention.
圖2係圖1沿II-II線之剖視圖。 Figure 2 is a cross-sectional view taken along line II-II of Figure 1.
圖3係圖2中之遮光元件陣列之製造方法之流程圖。 3 is a flow chart showing a method of manufacturing the light shielding element array of FIG. 2.
圖4係提供之透光平板示意圖。 Figure 4 is a schematic view of a light transmissive plate provided.
圖5係於圖4中之透光平板上設置濾光層示意圖。 FIG. 5 is a schematic view showing a filter layer disposed on the light-transmissive plate of FIG. 4.
圖6係於圖5中之濾光層上形成遮光層之示意圖。 Figure 6 is a schematic view showing the formation of a light shielding layer on the filter layer of Figure 5.
圖7係於圖6中之遮光層上形成磁屏蔽層之示意圖,該磁屏蔽層包括自該遮光層依次向外設置之銅薄膜層及不銹鋼薄膜層。 FIG. 7 is a schematic view showing the formation of a magnetic shielding layer on the light shielding layer of FIG. 6. The magnetic shielding layer includes a copper thin film layer and a stainless steel thin film layer which are sequentially disposed outward from the light shielding layer.
圖8係於圖7中之不銹鋼薄膜層上塗敷光阻層之示意圖,該光阻層具有複數間隔分佈之中央區域及圍繞該複數中央區域之週邊區域。 Figure 8 is a schematic view showing the application of a photoresist layer on the stainless steel film layer of Figure 7, the photoresist layer having a central region of a plurality of spaced apart distributions and a peripheral region surrounding the plurality of central regions.
圖9係對圖8中之週邊區域上之光阻進行曝光之示意圖。 Figure 9 is a schematic view showing exposure of the photoresist on the peripheral region of Figure 8.
圖10係將顯影後之複數中央區域上之光阻去除之示意圖。 Figure 10 is a schematic illustration of the removal of photoresist on a plurality of central regions after development.
圖11係對圖10中之瓷屏蔽層及遮光層進行蝕刻,以使與該複數中央區域正對之濾光層暴露於外之示意圖。 Figure 11 is a schematic view showing the porcelain shield layer and the light-shielding layer of Figure 10 etched to expose the filter layer facing the plurality of central regions.
圖12係於圖2中之遮光片陣列形成對位孔之示意圖。 Figure 12 is a schematic view showing the formation of alignment holes by the array of masks in Figure 2;
圖13係本發明第二實施例提供之鏡頭模組陣列之示意圖。 FIG. 13 is a schematic diagram of a lens module array according to a second embodiment of the present invention.
請參閱圖1及圖2,其為本發明第一實施例所提供遮光元件陣列100之示意圖。遮光元件陣列100包括透光平板10及自透光平板10向外依次設置之濾光層20、遮光屏蔽層30。遮光屏蔽層30包括自濾光層20向外依次設置之遮光層301及磁屏蔽層303。遮光屏蔽層30具有複數間隔分佈之通光孔305。磁屏蔽層303包括自遮光層301依次向外之銅薄膜層3031及不銹鋼薄膜層3033。 Please refer to FIG. 1 and FIG. 2, which are schematic diagrams of a light shielding device array 100 according to a first embodiment of the present invention. The light shielding element array 100 includes a light transmitting plate 10 and a filter layer 20 and a light shielding layer 30 which are disposed outward from the light transmitting plate 10 . The light shielding layer 30 includes a light shielding layer 301 and a magnetic shielding layer 303 which are disposed outward from the filter layer 20 in order. The light shielding layer 30 has a plurality of light-dissipating apertures 305 spaced apart. The magnetic shield layer 303 includes a copper thin film layer 3031 and a stainless steel thin film layer 3033 which are sequentially outward from the light shielding layer 301.
請參閱圖3,其為遮光元件陣列100之製造方法之流程圖。該方法包括以下步驟:(1)提供一塊透光平板;(2)於該透光平板上設置遮光層; (3)於該遮光層上形成磁屏蔽層;(4)於該磁屏蔽層上塗敷光阻層,該光阻層包括複數間隔分佈之中央區域及圍繞該複數中央區域之週邊區域;(5)曝光、顯影,以去除該複數中央區域上之光阻;(6)對該磁屏蔽層及遮光層進行蝕刻,以使與該複數中央區域正對之透光平板暴露於外;(7)去除該週邊區域上之光阻,以形成一遮光元件陣列。 Please refer to FIG. 3 , which is a flow chart of a method for manufacturing the shading element array 100 . The method comprises the following steps: (1) providing a light-transmissive plate; (2) providing a light-shielding layer on the light-transmissive plate; (3) forming a magnetic shielding layer on the light shielding layer; (4) applying a photoresist layer on the magnetic shielding layer, the photoresist layer including a central region of a plurality of spaced intervals and a peripheral region surrounding the plurality of central regions; Exposing and developing to remove the photoresist on the central region; (6) etching the magnetic shield layer and the light shielding layer to expose the transparent flat plate facing the plurality of central regions; (7) The photoresist on the peripheral region is removed to form an array of shading elements.
下面將對遮光元件陣列100之製造方法進行詳細說明。 The method of manufacturing the light shielding element array 100 will be described in detail below.
請參閱圖4,首先提供一塊透光平板10。該透光平板10具有相對之第一表面101及第二表面102。本實施例中,透光平板10由玻璃製成。當然,透光平板10亦可以由塑膠等透光材料製成。 Referring to Figure 4, a light transmissive plate 10 is first provided. The light transmissive plate 10 has a first surface 101 and a second surface 102 opposite thereto. In this embodiment, the light transmissive plate 10 is made of glass. Of course, the light transmissive plate 10 can also be made of a light transmissive material such as plastic.
請參閱圖5,於透光平板10之第一表面101上設置濾光層20,以免影像感測器(圖未示)產生雜訊。濾光層20可採用不同之設計以實現過濾不同波長之光線。本實施例中,濾光層20為紅外截止濾光膜。當然,該濾光層20亦可以為低通濾光膜、紫外截止濾光膜等其他類型濾光膜或者紅外截止濾光片、紫外截止濾光片等其他類型之濾光片。當然,亦可以將濾光層20設置於透光平板10之第二表面102。當然,亦可以不設置濾光層20。 Referring to FIG. 5, a filter layer 20 is disposed on the first surface 101 of the transparent plate 10 to prevent noise from being generated by an image sensor (not shown). The filter layer 20 can be of different design to achieve filtering of light of different wavelengths. In this embodiment, the filter layer 20 is an infrared cut filter film. Of course, the filter layer 20 can also be other types of filters such as a low pass filter film, an ultraviolet cut filter film, or other types of filters such as an infrared cut filter and an ultraviolet cut filter. Of course, the filter layer 20 can also be disposed on the second surface 102 of the light transmissive plate 10. Of course, the filter layer 20 may not be provided.
請參閱圖6,於濾光層20形成上遮光層301。本實施例中,採用濺鍍之方法於濾光層20形成遮光層301,且遮光層301之材料為鉻。當然,亦可以採用蒸鍍等其他鍍膜方法來形成遮光層301,當然,遮光層301之材料亦可以氮化鈦等其他可以吸收光線之材料。 Referring to FIG. 6, an upper light shielding layer 301 is formed on the filter layer 20. In this embodiment, the light shielding layer 301 is formed on the filter layer 20 by sputtering, and the material of the light shielding layer 301 is chromium. Of course, the light shielding layer 301 may be formed by another plating method such as vapor deposition. Of course, the material of the light shielding layer 301 may be other materials that can absorb light such as titanium nitride.
請參閱圖7,於遮光層301上形成磁屏蔽層303,從而形成具有遮光層301及磁屏蔽層303之遮光屏蔽層30。磁屏蔽層303可以防止外界電磁波干擾影像感測器工作。本實施例中,採用濺鍍之方法於遮光層301形成磁屏蔽層303,且磁屏蔽層303包括自遮光層301依次向外形成之銅薄膜層3031及不銹鋼薄膜層3033。不銹鋼薄膜層3033不僅可以屏蔽磁場,還可以防止銅薄膜層3031被氧化,從而提高了磁屏蔽層303之屏蔽效能。當然,亦可以採用蒸鍍等其他鍍膜方法來形成磁屏蔽層303。當然,磁屏蔽層303之材料亦可以為鐵、鋁、鎳、鐵鎳軟磁合金或鐵鋁合金等其他可屏蔽磁場材料。 Referring to FIG. 7 , a magnetic shield layer 303 is formed on the light shielding layer 301 to form a light shielding layer 30 having a light shielding layer 301 and a magnetic shielding layer 303 . The magnetic shielding layer 303 can prevent external electromagnetic waves from interfering with the operation of the image sensor. In this embodiment, the magnetic shielding layer 303 is formed on the light shielding layer 301 by a sputtering method, and the magnetic shielding layer 303 includes a copper thin film layer 3031 and a stainless steel thin film layer 3033 which are sequentially formed outward from the light shielding layer 301. The stainless steel film layer 3033 not only shields the magnetic field, but also prevents the copper thin film layer 3031 from being oxidized, thereby improving the shielding effectiveness of the magnetic shield layer 303. Of course, the magnetic shielding layer 303 may be formed by another plating method such as vapor deposition. Of course, the material of the magnetic shielding layer 303 may also be other shieldable magnetic field materials such as iron, aluminum, nickel, iron-nickel soft magnetic alloy or iron-aluminum alloy.
請參閱圖8及圖9,於磁屏蔽層303上塗敷光阻層40。光阻層40包括複數間隔分佈之中央區域401及圍繞複數中央區域401之週邊區域402。本實施例中,採用旋轉塗布之方式將光阻層40塗敷於磁屏蔽層303上,且光阻層40由負型光阻構成。當然,光阻層40亦可以由正型光阻構成。 Referring to FIGS. 8 and 9, a photoresist layer 40 is coated on the magnetic shield layer 303. The photoresist layer 40 includes a plurality of spaced apart central regions 401 and a peripheral region 402 surrounding the plurality of central regions 401. In this embodiment, the photoresist layer 40 is applied to the magnetic shield layer 303 by spin coating, and the photoresist layer 40 is composed of a negative photoresist. Of course, the photoresist layer 40 can also be composed of a positive photoresist.
將塗敷有光阻層40之透光平板10放置於具有複數通光孔501之光罩50下,以對週邊區域402上之光阻曝光,以形成被曝光後之光阻403。優選地,為了使中央區域401上之光阻更好地溶解於顯影液中,將有光阻403之透光平板10曝後烤。曝後烤亦可利用烤箱之熱空氣對流、紅外線輻射或熱墊板之熱傳導來進行。本實施例中,採用熱墊板之熱傳導來進行,其中,烘烤溫度為70~100攝氏度,烘烤時間為4~8分鐘。當然,亦可以採用鐳射直寫技術或者電子束直寫技術等其他直寫技術對週邊區域402上之光阻進行曝光處理。 The light-transmissive flat plate 10 coated with the photoresist layer 40 is placed under the photomask 50 having a plurality of light-passing holes 501 to expose the photoresist on the peripheral region 402 to form the exposed photoresist 403. Preferably, in order to better dissolve the photoresist on the central region 401 in the developer, the light-transmissive plate 10 having the photoresist 403 is exposed and baked. After exposure, the baking can also be carried out by using hot air convection in the oven, infrared radiation or heat transfer of the thermal pad. In this embodiment, heat conduction is performed by using a heat pad, wherein the baking temperature is 70 to 100 degrees Celsius, and the baking time is 4 to 8 minutes. Of course, it is also possible to expose the photoresist on the peripheral region 402 by other direct writing techniques such as laser direct writing or electron beam direct writing.
請參閱圖10,顯影,以去除複數中央區域401上之光阻,從而留下週邊區域402上之光阻403作為後續蝕刻過程中之保護層。優選地,為了使週邊區域402上之光阻403更好之黏著於磁屏蔽層303、邊緣平坦、減少缺陷空隙、耐腐蝕及將週邊區域402上之光阻403中溶劑之含量降到最低,將透光平板10硬烤。硬烤亦可利用烤箱之熱空氣對流、紅外線輻射或熱墊板之熱傳導來進行。本實施例中,採用熱墊板之熱傳導來進行硬烤,其中,烘烤溫度為70~200攝氏度,烘烤時間為15~20分鐘。當然,上述過程中,係係否需要曝後烤或硬烤應根據實際情況來確定。如果需要曝後烤或硬烤,則烘烤溫度及時間亦應根據實際情況來確定。 Referring to Figure 10, development is performed to remove the photoresist on the plurality of central regions 401, thereby leaving the photoresist 403 on the peripheral region 402 as a protective layer in the subsequent etching process. Preferably, in order to better adhere the photoresist 403 on the peripheral region 402 to the magnetic shield layer 303, flatten the edges, reduce defect voids, resist corrosion, and minimize the amount of solvent in the photoresist 403 on the peripheral region 402, The light transmissive plate 10 is hard baked. Hard roasting can also be carried out using hot air convection in the oven, infrared radiation or heat transfer from the thermal pad. In this embodiment, the thermal conduction of the thermal pad is used for hard baking, wherein the baking temperature is 70 to 200 degrees Celsius, and the baking time is 15 to 20 minutes. Of course, in the above process, whether the system needs to be baked or hard baked should be determined according to the actual situation. If it is necessary to bake or hard-bake after exposure, the baking temperature and time should also be determined according to the actual situation.
請參閱圖11,將形成於透光平板10之磁屏蔽層303及遮光層301進行蝕刻,以使與複數中央區域401正對之濾光層20被暴露於外。即,對遮光屏蔽層30進行蝕刻,以使遮光屏蔽層30具有複數與複數中央區域401一一正對之通光孔305。 Referring to FIG. 11, the magnetic shield layer 303 and the light shielding layer 301 formed on the transparent plate 10 are etched so that the filter layer 20 facing the plurality of central regions 401 is exposed. That is, the light shielding layer 30 is etched so that the light shielding layer 30 has a plurality of light passing holes 305 that face the plurality of central regions 401 one by one.
去除週邊區域402上之光阻403,以形成遮光元件陣列100(參閱圖2)。當然,若製造遮光元件陣列100時,透光平板10未設置濾光層20,或者濾光層20設置於透光平板10之第二表面102,蝕刻後,與複數中央區域401正對之透光平板10被暴露於外。 The photoresist 403 on the peripheral region 402 is removed to form the light shielding element array 100 (see FIG. 2). Of course, when the light-shielding element array 100 is manufactured, the light-transmitting plate 10 is not provided with the filter layer 20, or the filter layer 20 is disposed on the second surface 102 of the light-transmitting plate 10, and after etching, is opposite to the plurality of central regions 401. The light panel 10 is exposed to the outside.
藉由遮光元件陣列100之製造方法獲得之遮光元件陣列100不僅具有遮光、濾光功能且可以防止外界電磁干擾,從而可以提高具有遮光元件陣列100之鏡頭模組陣列之成像品質。 The light-shielding element array 100 obtained by the manufacturing method of the light-shielding element array 100 not only has a light-shielding and filtering function but also can prevent external electromagnetic interference, so that the imaging quality of the lens module array having the light-shielding element array 100 can be improved.
優選地,請參閱圖12,為了更好地將遮光元件陣列100與鏡片陣列(圖未示)對位,以使複數通光孔305之中心軸與鏡片陣列之複數鏡片之中心軸一一對準,本實施例中,磁屏蔽層303還設有 兩個貫穿遮光屏蔽層30、濾光層20及透光平板10之對位孔60。當然,對位孔60之個數亦可以為三個、四個等更多個,可以根據需要來設計。 Preferably, referring to FIG. 12, in order to better align the light-shielding element array 100 with the lens array (not shown), the central axis of the plurality of light-passing holes 305 is paired with the central axis of the plurality of lenses of the lens array. In this embodiment, the magnetic shield layer 303 is further provided with Two alignment holes 60 penetrating through the light shielding layer 30, the filter layer 20 and the light transmission plate 10. Of course, the number of the alignment holes 60 can also be three, four, and the like, and can be designed as needed.
請參閱圖13,其為本發明第二實施例提供之鏡頭模組陣列200。鏡頭模組陣列200包括一遮光元件陣列300及一與遮光元件陣列300疊合於一起之鏡片陣列400。 Please refer to FIG. 13 , which illustrates a lens module array 200 according to a second embodiment of the present invention. The lens module array 200 includes an array of shading elements 300 and a lens array 400 superposed with the shading element array 300.
遮光元件陣列300與遮光元件陣列100之製作方法及結構大體相同,不同之處於於:每兩個通光孔305a之間均有對位孔70。 The light-shielding element array 300 and the light-shielding element array 100 are manufactured in substantially the same manner and structure, except that the alignment holes 70 are provided between each of the two light-passing holes 305a.
鏡片陣列400包括複數鏡片80及複數對位結構90。本實施例中,複數對位結構90均為通孔,且每兩個鏡片80之間均有對位結構90。當然,對位結構90亦可以為凸起。 Lens array 400 includes a plurality of lenses 80 and a plurality of alignment structures 90. In this embodiment, the plurality of alignment structures 90 are both through holes, and each of the two lenses 80 has an alignment structure 90 therebetween. Of course, the alignment structure 90 can also be a bump.
對位孔70與對位結構90相配合,以使遮光元件陣列300與鏡片陣列400疊合時,複數通光孔305a之中心軸與複數鏡片80之中心軸一一重合,最後切割成複數鏡頭模組。 The alignment hole 70 is matched with the alignment structure 90 such that when the light shielding element array 300 and the lens array 400 are overlapped, the central axis of the plurality of light transmission holes 305a coincides with the central axis of the plurality of lenses 80, and finally is cut into a plurality of lenses. Module.
當然,亦可以於遮光元件陣列300與鏡片陣列400之間設一間隔片陣列(圖未示)。該間隔片陣列具有複數間隔分佈之通孔,該複數通孔之中心軸與複數鏡片80之中心軸及複數通光孔305a之中心軸一一重合。 Of course, a spacer array (not shown) may be disposed between the light shielding element array 300 and the lens array 400. The spacer array has a plurality of spaced-apart vias, and a central axis of the plurality of vias coincides with a central axis of the plurality of lenses 80 and a central axis of the plurality of light-passing holes 305a.
當然,亦可以先將遮光元件陣列300與複數鏡片陣列疊合於一起,然後與具有複數影像感測器之矽晶圓壓合封裝,最後切割成複數相機模組。 Of course, the light-shielding element array 300 and the plurality of lens arrays may be first stacked together, then packaged with a silicon wafer having a plurality of image sensors, and finally cut into a plurality of camera modules.
綜上所述,本發明確已符合發明專利之要件,遂依法提出專利申請。惟,以上所述者僅為本發明之較佳實施方式,自不能以此限 制本案之申請專利範圍。舉凡熟悉本案技藝之人士援依本發明之精神所作之等效修飾或變化,皆應涵蓋於以下申請專利範圍內。 In summary, the present invention has indeed met the requirements of the invention patent, and has filed a patent application according to law. However, the above description is only a preferred embodiment of the present invention, and cannot be limited thereto. The scope of the patent application for this case. Equivalent modifications or variations made by persons skilled in the art in light of the spirit of the invention are intended to be included within the scope of the following claims.
100‧‧‧遮光元件陣列 100‧‧‧Lighting element array
10‧‧‧透光平板 10‧‧‧Lighting plate
20‧‧‧濾光層 20‧‧‧Filter layer
30‧‧‧遮光屏蔽層 30‧‧‧ shading shield
301‧‧‧遮光層 301‧‧‧Lighting layer
303‧‧‧磁屏蔽層 303‧‧‧Magnetic shielding
305‧‧‧通光孔 305‧‧‧Lighting hole
3031‧‧‧銅薄膜層 3031‧‧‧ copper film layer
3033‧‧‧不銹鋼薄膜層 3033‧‧‧Stainless steel film layer
Claims (9)
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| TW98144050A TWI440969B (en) | 2009-12-22 | 2009-12-22 | Method for making light blocking member array |
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| TW98144050A TWI440969B (en) | 2009-12-22 | 2009-12-22 | Method for making light blocking member array |
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| TW201122719A TW201122719A (en) | 2011-07-01 |
| TWI440969B true TWI440969B (en) | 2014-06-11 |
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| TWI579640B (en) * | 2015-10-15 | 2017-04-21 | 許銘案 | Thin-film mask, fitting aids, fitting and exposure device and fitting method for the thin-film mask pasted on a curved substrate |
| TWI814314B (en) * | 2022-03-29 | 2023-09-01 | 許銘案 | A substrate having a photoresist light shielding layer and the manufacturing process for making the same |
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