TWI440792B - 汽化裝置及其控制方法 - Google Patents
汽化裝置及其控制方法 Download PDFInfo
- Publication number
- TWI440792B TWI440792B TW099146317A TW99146317A TWI440792B TW I440792 B TWI440792 B TW I440792B TW 099146317 A TW099146317 A TW 099146317A TW 99146317 A TW99146317 A TW 99146317A TW I440792 B TWI440792 B TW I440792B
- Authority
- TW
- Taiwan
- Prior art keywords
- vaporization
- raw material
- crucible
- unit
- liquefied
- Prior art date
Links
- 230000008016 vaporization Effects 0.000 title claims description 328
- 238000009834 vaporization Methods 0.000 title claims description 319
- 238000000034 method Methods 0.000 title claims description 43
- 239000002994 raw material Substances 0.000 claims description 174
- 238000010438 heat treatment Methods 0.000 claims description 89
- 239000006200 vaporizer Substances 0.000 claims description 34
- 239000000463 material Substances 0.000 claims description 17
- 238000005259 measurement Methods 0.000 claims description 11
- 239000007787 solid Substances 0.000 claims description 11
- 238000007599 discharging Methods 0.000 claims description 10
- 229910052758 niobium Inorganic materials 0.000 claims description 5
- 239000010955 niobium Substances 0.000 claims description 5
- GUCVJGMIXFAOAE-UHFFFAOYSA-N niobium atom Chemical compound [Nb] GUCVJGMIXFAOAE-UHFFFAOYSA-N 0.000 claims description 5
- 238000009529 body temperature measurement Methods 0.000 claims description 2
- 238000012986 modification Methods 0.000 description 17
- 230000004048 modification Effects 0.000 description 17
- 239000007788 liquid Substances 0.000 description 11
- 238000012546 transfer Methods 0.000 description 10
- 239000013078 crystal Substances 0.000 description 8
- 238000004891 communication Methods 0.000 description 6
- 238000002347 injection Methods 0.000 description 6
- 239000007924 injection Substances 0.000 description 6
- 239000000758 substrate Substances 0.000 description 4
- 238000000151 deposition Methods 0.000 description 3
- 230000008021 deposition Effects 0.000 description 3
- 239000012530 fluid Substances 0.000 description 3
- 239000011344 liquid material Substances 0.000 description 3
- 239000011364 vaporized material Substances 0.000 description 3
- 238000010586 diagram Methods 0.000 description 2
- 239000007789 gas Substances 0.000 description 2
- 230000010355 oscillation Effects 0.000 description 2
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 2
- 230000000750 progressive effect Effects 0.000 description 2
- 238000012360 testing method Methods 0.000 description 2
- 239000000919 ceramic Substances 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 230000002542 deteriorative effect Effects 0.000 description 1
- 238000005265 energy consumption Methods 0.000 description 1
- 239000011810 insulating material Substances 0.000 description 1
- 230000007774 longterm Effects 0.000 description 1
- 230000007257 malfunction Effects 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 238000002488 metal-organic chemical vapour deposition Methods 0.000 description 1
- 230000000149 penetrating effect Effects 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 239000007921 spray Substances 0.000 description 1
- 238000005019 vapor deposition process Methods 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/448—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials
- C23C16/4485—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials by evaporation without using carrier gas in contact with the source material
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
- B01D—SEPARATION
- B01D1/00—Evaporating
- B01D1/0011—Heating features
- B01D1/0017—Use of electrical or wave energy
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
- B01D—SEPARATION
- B01D1/00—Evaporating
- B01D1/0082—Regulation; Control
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/24—Vacuum evaporation
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/54—Controlling or regulating the coating process
- C23C14/542—Controlling the film thickness or evaporation rate
- C23C14/543—Controlling the film thickness or evaporation rate using measurement on the vapor source
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/52—Controlling or regulating the coating process
Landscapes
- Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- General Chemical & Material Sciences (AREA)
- Physical Vapour Deposition (AREA)
- Chemical Vapour Deposition (AREA)
- Feeding, Discharge, Calcimining, Fusing, And Gas-Generation Devices (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR1020090135890A KR101172275B1 (ko) | 2009-12-31 | 2009-12-31 | 기화 장치 및 이의 제어 방법 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| TW201131101A TW201131101A (en) | 2011-09-16 |
| TWI440792B true TWI440792B (zh) | 2014-06-11 |
Family
ID=44226984
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW099146317A TWI440792B (zh) | 2009-12-31 | 2010-12-28 | 汽化裝置及其控制方法 |
Country Status (7)
| Country | Link |
|---|---|
| US (1) | US20130011804A1 (fr) |
| EP (1) | EP2519656B1 (fr) |
| JP (1) | JP5695669B2 (fr) |
| KR (1) | KR101172275B1 (fr) |
| CN (1) | CN102712994B (fr) |
| TW (1) | TWI440792B (fr) |
| WO (1) | WO2011081368A2 (fr) |
Families Citing this family (16)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2012046814A (ja) * | 2010-08-30 | 2012-03-08 | Kaneka Corp | 蒸着装置 |
| JP5356627B2 (ja) * | 2011-03-11 | 2013-12-04 | シャープ株式会社 | 蒸着粒子射出装置および蒸着装置 |
| TW201339354A (zh) * | 2011-11-01 | 2013-10-01 | Beneq Oy | 基板處理裝置及方法 |
| KR20140073198A (ko) | 2012-12-06 | 2014-06-16 | 삼성디스플레이 주식회사 | 유기물 기화 장치 및 그 제어방법 |
| KR101284585B1 (ko) * | 2013-01-21 | 2013-07-11 | 주식회사 썬닉스 | 반도체 장치 제조 설비 및 그의 제어 방법 |
| DE102013219999A1 (de) * | 2013-10-02 | 2015-04-02 | Singulus Technologies Ag | Tiegelverdampfer |
| FR3041545B1 (fr) * | 2015-09-28 | 2019-06-07 | Commissariat A L'energie Atomique Et Aux Energies Alternatives | Dispositif de conversion d'un liquide en vapeur et procede de regulation d'une puissance de chauffage associe |
| KR101713112B1 (ko) * | 2016-07-26 | 2017-03-08 | 에스엔유 프리시젼 주식회사 | 연속 충진이 가능한 증착물질 공급장치 |
| KR101713113B1 (ko) * | 2016-07-26 | 2017-03-08 | 에스엔유 프리시젼 주식회사 | 증착물질 공급장치 |
| WO2018020296A1 (fr) * | 2016-07-27 | 2018-02-01 | Arcelormittal | Appareil et procédé de dépôt par évaporation sous vide |
| KR20200076389A (ko) * | 2018-12-19 | 2020-06-29 | 주식회사 포스코 | Pvd 도금 공정에서의 도금층 제어 장치 및 방법 |
| EP3715499A1 (fr) * | 2019-03-29 | 2020-09-30 | Picosun Oy | Revêtement de substrat |
| KR200494277Y1 (ko) * | 2020-10-15 | 2021-09-08 | 주식회사 야스 | 균등 증발원 |
| KR102358204B1 (ko) | 2020-12-08 | 2022-02-07 | (주)데포랩 | 압력센서 |
| US20230130079A1 (en) * | 2021-10-27 | 2023-04-27 | Entegris, Inc. | High vapor pressure delivery system |
| JP7763705B2 (ja) * | 2022-04-07 | 2025-11-04 | 愛三工業株式会社 | 気化装置 |
Family Cites Families (30)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS63243264A (ja) * | 1987-03-31 | 1988-10-11 | Matsushita Electric Ind Co Ltd | 薄膜製造装置 |
| JPH02138462A (ja) * | 1988-11-16 | 1990-05-28 | Matsushita Electric Ind Co Ltd | 薄膜製造装置 |
| US5031229A (en) * | 1989-09-13 | 1991-07-09 | Chow Loren A | Deposition heaters |
| JPH0572965U (ja) * | 1992-03-11 | 1993-10-05 | 住友電気工業株式会社 | るつぼ |
| US5558720A (en) * | 1996-01-11 | 1996-09-24 | Thermacore, Inc. | Rapid response vapor source |
| EP1073777A2 (fr) * | 1998-04-14 | 2001-02-07 | CVD Systems, Inc. | Systeme de depot de film |
| US6202591B1 (en) * | 1998-11-12 | 2001-03-20 | Flex Products, Inc. | Linear aperture deposition apparatus and coating process |
| US20050147753A1 (en) * | 1999-10-22 | 2005-07-07 | Kurt J. Lesker Company | Material deposition system and a method for coating a substrate or thermally processing a material in a vacuum |
| US6932852B2 (en) * | 2002-01-30 | 2005-08-23 | Dowa Mining Co., Ltd. | Method and apparatus for enhanced purification of high-purity metals |
| JP2003222472A (ja) * | 2002-01-30 | 2003-08-08 | Toyota Industries Corp | ルツボ |
| TW200304955A (en) * | 2002-04-05 | 2003-10-16 | Matsushita Electric Industrial Co Ltd | Method and apparatus for producing resin thin film |
| JP2003342716A (ja) * | 2002-05-27 | 2003-12-03 | Sumitomo Electric Ind Ltd | ＧａＮ結晶の成長方法 |
| US7339139B2 (en) * | 2003-10-03 | 2008-03-04 | Darly Custom Technology, Inc. | Multi-layered radiant thermal evaporator and method of use |
| US20050229856A1 (en) * | 2004-04-20 | 2005-10-20 | Malik Roger J | Means and method for a liquid metal evaporation source with integral level sensor and external reservoir |
| JP4584087B2 (ja) * | 2004-09-14 | 2010-11-17 | 株式会社昭和真空 | 有機材料蒸発源及びこれを用いた蒸着装置 |
| JP2006111926A (ja) * | 2004-10-15 | 2006-04-27 | Hitachi Zosen Corp | 蒸着装置 |
| WO2006098792A2 (fr) * | 2004-12-30 | 2006-09-21 | Msp Corporation | Generation et distribution de vapeur haute precision pour depot de couche mince |
| EP1752555A1 (fr) * | 2005-07-28 | 2007-02-14 | Applied Materials GmbH & Co. KG | Dispositif d'évaporation |
| JP4679291B2 (ja) * | 2005-08-05 | 2011-04-27 | 日立造船株式会社 | 真空蒸着用蒸発方法および装置 |
| WO2007036997A1 (fr) * | 2005-09-28 | 2007-04-05 | Tadahiro Ohmi | Dispositif d'alimentation de liquide et procede de commande de dispositif d'alimentation de liquide |
| JP2007262478A (ja) * | 2006-03-28 | 2007-10-11 | Fujifilm Corp | 加熱蒸発装置および多元蒸着方法 |
| EP1862788A1 (fr) * | 2006-06-03 | 2007-12-05 | Applied Materials GmbH & Co. KG | Evaporateur pour matériau organique, installation de revêtement et leur procédé d'utilisation |
| DE502006001507D1 (de) * | 2006-06-03 | 2008-10-16 | Applied Materials Gmbh & Co Kg | Vorrichtung zum Verdampfen von Materialien mit einem Verdampferrohr |
| JP2008088531A (ja) * | 2006-10-04 | 2008-04-17 | Fujifilm Corp | 蛍光体層の形成方法 |
| JP4916385B2 (ja) * | 2007-06-11 | 2012-04-11 | キヤノン株式会社 | 有機発光素子の製造方法及び蒸着装置 |
| US20090020070A1 (en) * | 2007-07-19 | 2009-01-22 | Michael Schafer | Vacuum evaporation apparatus for solid materials |
| JP4889607B2 (ja) * | 2007-09-10 | 2012-03-07 | 株式会社アルバック | 供給装置、蒸着装置 |
| US20090293810A1 (en) * | 2008-05-30 | 2009-12-03 | Stefan Bangert | Arrangement for coating a substrate |
| KR100926437B1 (ko) * | 2008-11-17 | 2009-11-13 | 에스엔유 프리시젼 주식회사 | 증착 물질 공급 장치 및 이를 구비한 기판 처리 장치 |
| KR100936378B1 (ko) * | 2009-04-27 | 2010-01-13 | 에스엔유 프리시젼 주식회사 | 원료 공급 유닛과 박막 증착 장치 및 박막 증착 방법 |
-
2009
- 2009-12-31 KR KR1020090135890A patent/KR101172275B1/ko not_active Expired - Fee Related
-
2010
- 2010-12-24 JP JP2012547002A patent/JP5695669B2/ja not_active Expired - Fee Related
- 2010-12-24 WO PCT/KR2010/009316 patent/WO2011081368A2/fr not_active Ceased
- 2010-12-24 CN CN201080060061.7A patent/CN102712994B/zh not_active Expired - Fee Related
- 2010-12-24 US US13/520,186 patent/US20130011804A1/en not_active Abandoned
- 2010-12-24 EP EP10841200.8A patent/EP2519656B1/fr not_active Not-in-force
- 2010-12-28 TW TW099146317A patent/TWI440792B/zh not_active IP Right Cessation
Also Published As
| Publication number | Publication date |
|---|---|
| US20130011804A1 (en) | 2013-01-10 |
| KR20110078959A (ko) | 2011-07-07 |
| JP5695669B2 (ja) | 2015-04-08 |
| CN102712994A (zh) | 2012-10-03 |
| WO2011081368A3 (fr) | 2011-10-27 |
| EP2519656B1 (fr) | 2017-10-04 |
| EP2519656A4 (fr) | 2014-08-20 |
| WO2011081368A2 (fr) | 2011-07-07 |
| EP2519656A2 (fr) | 2012-11-07 |
| JP2013515862A (ja) | 2013-05-09 |
| CN102712994B (zh) | 2014-08-20 |
| KR101172275B1 (ko) | 2012-08-08 |
| TW201131101A (en) | 2011-09-16 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| TWI440792B (zh) | 汽化裝置及其控制方法 | |
| KR100691038B1 (ko) | 기화기 및 반도체 처리 장치 | |
| KR101956829B1 (ko) | 증착 방법 및 장치 | |
| KR101754356B1 (ko) | 증발원, 증착물질 공급장치, 및 이를 포함하는 증착장치 | |
| WO2004040630A1 (fr) | Procede de fabrication d'un dispositif a semi-conducteur et systeme de traitement de substrat | |
| TWI681066B (zh) | 真空蒸鍍裝置 | |
| CN101111625B (zh) | 用再装填的储存器进行真空沉积的装置和相应的真空沉积方法 | |
| KR20150128417A (ko) | 액상 전구체 공급장치 | |
| KR101109690B1 (ko) | 하향식 선형 증발원 및 이를 이용한 박막 형성 장치 | |
| KR101362585B1 (ko) | 금속성 박막 증착용 선형 하향식 고온 증발원 | |
| KR100659762B1 (ko) | 증발원, 증착장치 및 이를 이용한 증착방법 | |
| KR20140141197A (ko) | 유도가열을 이용한 기화 장치 및 이를 구비한 진공증착시스템 | |
| US11274367B2 (en) | Vaporizer | |
| KR101741806B1 (ko) | 리니어 분사체 및 이를 포함하는 증착장치 | |
| KR101132834B1 (ko) | 유기박막 증착 장치 | |
| JP2004324894A (ja) | ガス供給装置 | |
| KR101773038B1 (ko) | 기화기를 갖는 증착장치 및 증착방법 | |
| JP2002173777A (ja) | Ｃｖｄ装置の金属液体気化ユニット及び気化方法 | |
| JP4551996B2 (ja) | 蒸発装置 | |
| KR100951686B1 (ko) | 소스가스 공급장치 | |
| KR100527666B1 (ko) | 다공성 세라믹을 이용한 저유전 박막 형성용 액상전구체의 기화장치 및 기화방법 | |
| KR100413795B1 (ko) | 분사기 및 그를 장착한 기화기 | |
| JP2014150019A (ja) | 有機ｅｌデバイス製造装置及び有機ｅｌデバイス製造方法 | |
| KR100595764B1 (ko) | 플라즈마 중합장치의 가스 배출부 | |
| JPH0335947Y2 (fr) |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| MM4A | Annulment or lapse of patent due to non-payment of fees |