1325498 九、發明說明： 【發明所屬之技術領域】 本發明係有關於一種整合有底閘極薄膜電晶體放大器 之生物探針元件；特別是有關於一種運用微機電製程及半 導體製程，將底閘極薄膜電晶體放大器及微陣列生物探 針，整合於可撓式基板之結構。 【先前技術】 傳統微陣列型生物探針製作於堅硬的矽晶圓基板上， 不僅重又易碎’且需要高溫製程，成本非常高。再者，傳 統微陣列型生物探針無法依待測生物體的外型輪廓來設7 與安置，使得生物探針與待測物的接觸效果受到影響。此 外，傳統微陣列型生物探針測得訊號後，還需要額外取出 訊號做處理’以改善其信號雜訊比及阻抗匹配等，故需要 額外裝置來做訊號處理。因此傳統微陣列型生物探針在製 作上’需要許多花費且其複雜度高。若將傳統微陣列型生 物探針與處理訊號之電晶體放大器整合在一起，雖可以提 面k號雜訊比及阻抗匹配等性能，但是由於製作於堅硬的 石夕晶圓基板上，其仍無法依待測生物體的外型輪廓來設計 與安置。 將傳統微陣列型生物探針製作於可撓式基板上，雖可 以依待測生物體的外型輪廓來設計與安置，提高微陣列型 生物探針與待測物的接觸效果，但就現有技術而言，傳統 =微陣列生物探針無法與電晶體放大器整合在一起，以獲 仔更佳之信號處理結果，以利後續分析與判斷。其原因係 在於電晶體放大器製作過程需要高溫，可撓式基板在高溫 下會變形’使得電晶體放大器不利於製作在可撓式基板上。 5 1325498 • 見，微陣列型生物探針之技術而言，仍缺乏一種可 以大量簡，製造、成本低廉，可依待測生物體的外型輪廓 來設计與安置及同時提高信號雜訊ώ與阻抗匹配性能的微 陣列型生物探針元件。 【發明内容】 . 本^明之主要目的係提供一種整合有底閘極薄膜電晶 體放大之微陣列生物探針元件，係運用微機電製程與半 導體製程，將微陣列生物探針與底閘極薄膜電晶體放大 • 器，整合於可撓式基板上，以提高探針與待測生物體的接 觸效果及信號雜訊比。 為達^述目的，本發明提供一種整合有底閘極薄膜電 晶體放大器之微陣列生物探針元件，其包括一第一可撓式 基板、一第二可撓式基板、複數個生物探針及至少一底閘 極薄膜電晶體放大器。該第一可撓式基板係具有複數條第 一導電性連線於其中，使該第一可撓式基板的第一表面及 第二表面產生電性連通。該等生物探針係形成於該第一可 Φ 撓式基板的該第一表面上，該等生物探針分別電氣連接於 對應的一該第一導電性連線。該第二可撓式基板係具有複 數條第二導電性連線於其中，使該第二可撓式基板的上表 面及下表面產生電性連通，並且該第二可撓式基板的下表 面係電性接合於該第一可撓式基板的第二表面。該至少一 底問極薄膜電晶體放大器係形成於該第二可撓式基板的上 表面上，並且複數條引線形成於該第二可撓式基板的上表 面上’其中該等引線係分別電性連接於對應的該等第二導 電性連線。本發明之前述整合有底閘極薄膜電晶體放大器 之微陣列生物探針元件，藉由該等第一導電性連線、該等 6 1325498 =二導電性連線及料5丨線，使該等生物探針與該底問極 薄膜電晶體放大器產生電信號連通。 另一方面，前述生物探針的端部可呈尖端狀，以利於 刺入生物體，以降低接觸阻抗。本發明亦可改變探針的密 度、佔據面積及探針端部的尖銳程度，以改變其接 俾適用於不同的應用需求。 本發明將微陣列生物探針及底間極薄膜電 ^整=可撓式基板上，使得本發明產品可推廣成捲筒 型式’有利於大量製造生產。 【實施方式】 運賴機電製程及半導體製程，將底閘極 4膜電s曰體放大器及微陣列生物探針，整合在可撓式基 ，上。將微陣列生物探針做在可撓式基板上的好處二 =可以依待測生物體的外型輪廓來設計安置。如此一 Λ ，生物探針與待測生物體的接觸效果會更好。另一方 =，發明將底閘極薄膜電晶體放大器—併做在可挽式 =上’這樣⑽陣列生物探針所獲得的信號可以怒 以信號雜訊比及阻抗匹配等性能也會提高1 作成本也會降低許多。 本發明整合有底閘極薄膜電晶體放大器 =針：件，’將藉由以下較佳具體 圖式，予以詳細說明如下： ⑽ίifΐ本發明整合有底間極薄膜電晶體放大器之 音圖件3〇 一較佳具體實施例的結構截面示 晶體放大器之微陣列生物 木針以牛30係包括一微陣列生物探針1〇及一底間極薄 7 1325498 膜電晶體放大器與介面整合模組2〇a。第一 A圖係該微陣 列生物探針元件10的截面示意圖。第二A圖係本發明底 閘極薄膜電晶體放大器20的截面示意圖’及第二B圖係 本發明該底閘極薄膜電晶體放大器與介面整合模組20a1325498 IX. Description of the Invention: [Technical Field] The present invention relates to a bioprobe element incorporating a bottomed gate thin film transistor amplifier; in particular, a microelectromechanical process and a semiconductor process are used A thin film transistor amplifier and a microarray bioprobe are integrated into the structure of the flexible substrate. [Prior Art] Conventional microarray type bioprobes are fabricated on a hard tantalum wafer substrate, which is not only heavy and fragile, but also requires a high temperature process and is very costly. Furthermore, the conventional microarray-type bioprobe cannot be placed and placed according to the contour of the organism to be tested, so that the contact effect of the bioprobe with the analyte is affected. In addition, after the traditional microarray type bio-probe detects the signal, it needs to take out additional signals for processing to improve its signal-to-noise ratio and impedance matching, so additional devices are needed for signal processing. Therefore, conventional microarray type bioprobes require a lot of cost and complexity in their manufacture. If the traditional microarray type bioprobe is integrated with the transistor amplifier for processing the signal, although the performance of the k-th noise ratio and the impedance matching can be improved, it is still fabricated on the hard Shihwa wafer substrate. It cannot be designed and placed according to the contour of the organism to be tested. The conventional microarray type biological probe is fabricated on a flexible substrate, and can be designed and placed according to the contour of the living organism to be tested, thereby improving the contact effect between the microarray type biological probe and the object to be tested, but In terms of technology, the traditional = microarray bioprobe cannot be integrated with the transistor amplifier to obtain better signal processing results for subsequent analysis and judgment. The reason for this is that the transistor amplifier manufacturing process requires high temperatures, and the flexible substrate deforms at high temperatures, making the transistor amplifier unfavorable for fabrication on a flexible substrate. 5 1325498 • See, micro-array bioprobe technology still lacks a large amount of simplicity, manufacturing, and low cost. It can be designed and placed according to the contour of the organism to be tested and at the same time improve signal noise. A microarray type bioprobe element that matches impedance to performance. SUMMARY OF THE INVENTION The main object of the present invention is to provide a microarray bioprobe element integrated with a bottomed gate thin film transistor, which uses a microelectromechanical process and a semiconductor process to form a microarray bioprobe and a bottom gate film. The transistor amplifier is integrated on the flexible substrate to improve the contact between the probe and the organism to be tested and the signal-to-noise ratio. For the purpose of the present invention, the present invention provides a microarray bioprobe element incorporating a bottomed gate thin film transistor amplifier, comprising a first flexible substrate, a second flexible substrate, and a plurality of biological probes. And at least a bottom gate thin film transistor amplifier. The first flexible substrate has a plurality of first conductive wires connected therein to electrically connect the first surface and the second surface of the first flexible substrate. The bioprobes are formed on the first surface of the first Φ flexible substrate, and the bioprobes are electrically connected to a corresponding one of the first conductive wires. The second flexible substrate has a plurality of second conductive wires connected therein to electrically connect the upper surface and the lower surface of the second flexible substrate, and a lower surface of the second flexible substrate Electrically bonding to the second surface of the first flexible substrate. The at least one bottom film thin film transistor amplifier is formed on an upper surface of the second flexible substrate, and a plurality of leads are formed on an upper surface of the second flexible substrate, wherein the leads are respectively electrically The two wires are connected to the corresponding second conductive wires. The microarray bioprobe element integrated with the bottom gate thin film transistor amplifier of the present invention, by the first conductive connection, the 6 1325498 = two conductive connection and the material 5 丨 line The bioprobe is electrically coupled to the bottom thin film transistor amplifier. On the other hand, the end portion of the aforementioned bioprobe may be pointed to facilitate penetration into the living body to lower the contact resistance. The present invention also alters the density of the probe, the footprint, and the sharpness of the tip of the probe to alter its interface for different application needs. The present invention electroforms the microarray bioprobe and the interstitial thin film on the flexible substrate, so that the product of the present invention can be promoted into a roll type, which is advantageous for mass production. [Embodiment] In the electromechanical process and the semiconductor process, the bottom gate 4 membrane electric scorpoidal amplifier and the microarray bioprobe are integrated on the flexible base. The benefits of using a microarray bioprobe on a flexible substrate can be designed according to the contour of the organism to be tested. In this way, the bioprobe is more effective in contact with the organism to be tested. The other side =, invented the bottom gate thin film transistor amplifier - and done in the pullable = up" (10) array of bio-probe signals can be angered by signal noise ratio and impedance matching, etc. This will also be much lower. The present invention integrates a bottom gate thin film transistor amplifier=pin:piece, which will be described in detail by the following detailed drawings: (10) ίifΐ The sound image of the integrated interpolar thin film transistor amplifier is integrated. A cross section of a preferred embodiment shows a microarray biochip of a crystal amplifier. The bovine 30 series includes a microarray bioprobe 1 and an interpolar thin 7 1325498 membrane transistor amplifier and interface integration module. a. The first A is a schematic cross-sectional view of the microarray bioprobe element 10. 2A is a schematic cross-sectional view of a bottom gate thin film transistor amplifier 20 of the present invention and a second B diagram. The bottom gate thin film transistor amplifier and interface integration module 20a of the present invention
的截面示意圖。參第一 A圖，本發明該微陣列生物探針 元件10係包括：一第一可撓式基板100，例如一可撓式 塑膠基板；複數條第一導電性連線101，係貫通該第一可 撓式基板100’以電性連通該第一可撓式基板1〇〇的第一 表面及第二表面，該第一導電性連線丨〇1可以是導電性 種子層’如鈦或氮化鈦材質；一第一導電性種子層1〇2， 係分別形成於該第一可撓式基板1〇0之第一表面上方及 第二表面下方，以電性接觸於該等第一導電性連線1〇1， 該第一導電性種子層102的材質可以是銅、鎳或金；一 陣列式生物探針模組，係包含複數組陣列式生物探針 形成於該第一可撓式基板100第一表面的該第一導電性 種子層1G2下方’其中每—該生物探針1()3係對應且電 =通於-該第-導電性連線1〇1 ;及—生物相容^ 】二：係包覆該陣列式生物探針模組，以做為該4列 屛104可以、Λ丨面層，該生物相容性導電 其他生物相容性的高ΐ度金屬 » __ 产約 2' ' ' 外在該微陣列生物探針1G 米。另 膠卿或焊錫膏，以利於後續^^層導i膠(如銀 大器:⑽合模組20a以背V背該方 =薄膜電晶體放 ^ ft *ϋ 的唯一不同處係在於其每-d端第部： 8 1325498 狀，以利於刺入生物體’以降低接觸阻抗，係可用於大 電流信號輸入及輸出的情況。 另一方面’本發明可改變生物探針的密度、其佔據 面積及探針端部的尖銳程度’而改變其阻抗，以適用於 . 不同應用的需求。 參第二A圖，本發明該底閘極薄膜電晶體放大器20 包括一第二可撓式基板200，例如是一可撓式塑膠基板； 複數條第二導電性連線202 ’係貫通該第二可撓式基板 200，以使後續兩面信號導通，該等第二導電性連線202 鲁 可以是由導電性種子層’如鈦或氮化鈦或其他高硬度及 高附著性金屬形成；一第二導電性層203例如銅金屬層 係分別形成於該第二可撓式塑膠基板200上表面的該等 第二導電性連線202上方及其下表面的該等第二導電性 連線202下方；一第一介電層204，例如二氧化矽層或氮 化矽(Si^4)層或其它絕緣層’係形成於該第二可撓式基板 200上表面的該第二導電性層203上；至少三個第一導電 型底閘極薄膜電晶體2〇5a(例如底閘極N通道薄膜電晶體) φ 及至少一個第二導電型底閘極薄膜電晶體205b(例如底閘 薄膜電晶 電層204 體205a皆包含一底閘極2〇5ia形成於該第 極P通道薄膜電晶體）以及複數條引線2〇6，係形成於該 第一介電層204上，該等引線206係貫通該第一介電層 204及該第二導電性層2〇3，並且分別電性連接於對應的 了條該第二導電性連線2〇2，該等三個第一導電型底閘極 二曰 上、一對第一導電型源極/汲極2052a及一第一 導電型通道2053a係形成於該底閘極2〇51a上方，而一第 介電層207例如二Schematic diagram of the section. Referring to FIG. 1A, the microarray bioprobe element 10 of the present invention comprises: a first flexible substrate 100, such as a flexible plastic substrate; and a plurality of first conductive wires 101 extending through the first a flexible substrate 100 ′ electrically connected to the first surface and the second surface of the first flexible substrate 1 , the first conductive connection 丨〇 1 may be a conductive seed layer such as titanium or a titanium nitride material; a first conductive seed layer 1 〇 2 is formed on the first surface of the first flexible substrate 1 〇 0 and below the second surface to electrically contact the first Conductive connection 1〇1, the material of the first conductive seed layer 102 may be copper, nickel or gold; an array bioprobe module comprising a complex array array bioprobe formed on the first Below the first conductive seed layer 1G2 of the first surface of the flexible substrate 100, wherein each of the bioprobes 1() 3 corresponds to and electrically = through the first conductive connection 1〇1; Biocompatible ^ 】 2: coating the array of biological probe modules, as the four rows of 可以 104 can be, the surface layer, the Highly biocompatible metal ΐ of other biocompatible conductive »__ yield about 2 '' 'biological probes of the microarray external 1G meters. Another glue or solder paste, in order to facilitate the subsequent ^ ^ layer of i glue (such as silver: (10) combined with the module 20a to back V back the side = thin film transistor ^ ft * ϋ the only difference is that each -d end part: 8 1325498 shape, in order to facilitate penetration into the organism 'to reduce contact impedance, can be used for high current signal input and output. On the other hand 'the invention can change the density of the bioprobe, its occupation The area and the sharpness of the tip end of the probe change its impedance to suit the needs of different applications. Referring to FIG. 2A, the bottom gate thin film transistor amplifier 20 of the present invention includes a second flexible substrate 200. For example, a flexible plastic substrate; a plurality of second conductive wires 202 ′ are passed through the second flexible substrate 200 to turn on the subsequent two-sided signals, and the second conductive wires 202 may be Formed by a conductive seed layer such as titanium or titanium nitride or other high hardness and high adhesion metal; a second conductive layer 203 such as a copper metal layer is respectively formed on the upper surface of the second flexible plastic substrate 200 Above and below the second conductive connection 202 The second conductive layer 202 is under the surface; a first dielectric layer 204, such as a hafnium oxide layer or a tantalum nitride (Si^4) layer or other insulating layer, is formed on the second flexible On the second conductive layer 203 on the upper surface of the substrate 200; at least three first conductive type bottom gate thin film transistors 2〇5a (for example, a bottom gate N-channel thin film transistor) φ and at least one second conductive type bottom The gate thin film transistor 205b (for example, the bottom gate thin film electromorph layer 204 205a includes a bottom gate 2 〇 5ia formed on the first pole P channel thin film transistor) and a plurality of leads 2 〇 6 formed in the The first dielectric layer 204 extends through the first dielectric layer 204 and the second conductive layer 2〇3, and is electrically connected to the corresponding strip of the second conductive connection 2, respectively. 〇2, the three first conductivity type bottom gates, a pair of first conductivity type source/drain electrodes 2052a and a first conductivity type channel 2053a are formed above the bottom gate 2〇51a. And a dielectric layer 207, for example, two
9 1325498 極/汲極2052a及該第一導電型通道2053a之間，以供做 該等第一導電型底閘極薄膜電晶體205a的閘極絕緣層， 而該等底閘極2051a之材質可以是鋁、鉻、鎳或其它金 屬。同樣地，該第二導電型底閘極薄膜電晶體205b包含 一底閘極205lb係形成於該第一介電層204上、一對第 二導電型源極/汲極2052b及一第二導電型通道2053b， 係形成於該底閘極2051b上方，而該第二介電層207亦 形成於該底閘極2051b與該對第二導電型源極/汲極 2052b及該第二導電型通道2053b之間，以供做該第二導 電型底閘極薄膜電晶體205b的閘極絕緣層，其中該等三 個第一導電型底閘極薄膜電晶體205a及該第二導電型底 閘極薄膜電晶體205b ’構成本發明的該底閘極薄膜電晶 體放大器’係組成兩個反相放大器，其電路示意圖如第 四圖所示；一第三介電層208，例如氮化矽層或二氧化矽 層或其他絕緣層，係形成於該等第一導電型底閘極薄膜 電晶體205a、該第二導電型底閘極薄膜電晶體205b及該 等引線206上方；複數條第三導電性連線209a及複數個 第一焊墊209b係形成於該第三介電層208的介層通孔中 及其表面上，其中該等第三導電性連線209a連通該等第 一導電型底閘極薄膜電晶體205a的第一導電型源極/汲 極2052a及第一導電型通道2053a及該第二導電型底閘極 薄膜電晶體205b的第二導電型源極/汲極2052b及第二導 電型通道2053b，及該等第一焊墊209b連通該等引線 206 ’其中該等第三導電性連線209a及該等第一焊墊209b 的材質可以是鋁或其它金屬；一絕緣性保護層21〇，係形 成於該等第三導電性連線209a及該等第一焊墊209b上， 以隔離濕氣及保護下方的底閘極薄膜電晶體元件，該保 1325498 護層210可以是二氧化矽層或氮化矽層或其它絕緣材料 層；複數個第二焊墊211分別形成於該保護層210中的每 一焊墊通孔内，其中該等第二焊墊211的材質可以是鎳、 金或其它金屬，係分別形成於該等第三導電性連線209a 上方；複數個導電性凸塊212，可以是導電膠或錫膏，係 形成於該等第二焊墊211上，以利於與電源、接地及輸入 /輸出介面板（背面有BNC等電氣接頭）形成連線。 參第二B圖，本發明該底閘極薄膜電晶體放大器與 介面整合模組20a係包含具有電源、接地及輸入/輸出等 電氣接頭22的一介面板21及該底閘極薄膜電晶體放大 器20。該介面板21係一可撓性基板，而該等電氣接頭 22係由導電膠或焊錫形成並貫穿該介面板21。該底閘極 薄膜電晶體放大器20的每一該導電性凸塊212對應一該 電氣接頭22，以使該等導電性凸塊212與該等電氣接頭 22對準接合，以形成該底閘極薄膜電晶體放大器與介面 整合模組20a。之後，在該底閘極薄膜電晶體放大器與介 面整合模組20a的背面舖上一層導電膠(如銀膠)23或焊 錫膏，以利於後續與該微陣列生物探針10以背對背方式 接合。 參第三圖，本發明前述整合有底閘極薄膜電晶體放 大器之微陣列生物探針元件30中該底閘極薄膜電晶體放 大器與介面整合模組20a與該微陣列生物探針元件10係 藉由兩者背面的導電膠或錫膏以背對背的方式接合在一 起，以形成本發明該整合有底閘極薄膜電晶體放大器之 微陣列生物探針元件30。再者，本發明使用銀膠做為接 合劑的目的，係銀膠加熱後可軟化而分離，有利於將來 抽換該微陣列生物探針元件10，進而降低該整合有底閘 1325498 極薄膜電晶體放大器之微陣列生物探針元件30的維護成 本0 另一方面’也可使用雙面導電膜或雙面導電膠帶取 代銀膠，以接合該底閘極薄膜電晶體放大器與介面整合 模組20a與該微陣列生物探針元件10。 據上，本發明將微陣列生物探針及底閘極薄膜電晶體 放大器整合於可撓式基板上，使得本發明產品可推廣成捲 筒型式，有利於大量製造生產。 以上所述僅為本發明之實施例而已’並非用以限定 本發明之申請專利範圍；凡其它未脫離本發明所揭示之 精神下所完成之等效改變或修飾，均應包含在下述之申 請專利範圍内。9 1325498 between the pole/drain pole 2052a and the first conductive type channel 2053a, for the gate insulating layer of the first conductive type bottom gate film transistor 205a, and the material of the bottom gate 2051a may be It is aluminum, chromium, nickel or other metals. Similarly, the second conductive bottom gate film transistor 205b includes a bottom gate 205 lb formed on the first dielectric layer 204, a pair of second conductivity type source/drain electrodes 2052b, and a second conductive layer. A type of channel 2053b is formed over the bottom gate 2051b, and the second dielectric layer 207 is also formed on the bottom gate 2051b and the pair of second conductivity type source/drain electrodes 2052b and the second conductive type channel Between 2053b, the gate insulating layer of the second conductive type bottom gate film transistor 205b, wherein the three first conductive type bottom gate film transistors 205a and the second conductive type bottom gate The thin film transistor 205b' constitutes the bottom gate thin film transistor amplifier of the present invention constitutes two inverting amplifiers, the circuit diagram of which is shown in the fourth figure; a third dielectric layer 208, such as a tantalum nitride layer or a ruthenium dioxide layer or other insulating layer is formed on the first conductive type bottom gate film 205a, the second conductive type bottom gate film 205b, and the leads 206; a sexual connection 209a and a plurality of first pads 209b are formed in the first The first conductive type source/drain 2052a of the first conductive type bottom gate thin film transistor 205a is connected to the via hole of the dielectric layer 208 and the surface thereof. And the first conductive type channel 2053a and the second conductive type source/drain 2052b and the second conductive type channel 2053b of the second conductive type bottom gate transistor 205b, and the first pads 209b are connected to the first conductive pads 209b. The material of the third conductive connection 209a and the first pads 209b may be aluminum or other metal; an insulating protective layer 21 is formed on the third conductive connection 209a. And the first bonding pads 209b for isolating moisture and protecting the underlying bottom gate thin film transistor element, the protective layer 1325498 may be a ceria layer or a tantalum nitride layer or other insulating material layer; The second pads 211 are respectively formed in the via holes of the protective layer 210. The second pads 211 may be made of nickel, gold or other metals, and are respectively formed in the third pads. Above the conductive connection 209a; a plurality of conductive bumps 212, which may be A conductive paste or solder paste is formed on the second pads 211 to facilitate wiring with power, ground, and input/output interface panels (with electrical connectors such as BNCs on the back). Referring to FIG. 2B, the bottom gate thin film transistor amplifier and interface integration module 20a of the present invention comprises a dielectric panel 21 having an electrical connector 22 for power, ground, and input/output, and the bottom gate thin film transistor amplifier 20. . The interface panel 21 is a flexible substrate, and the electrical connectors 22 are formed of conductive paste or solder and penetrate the dielectric panel 21. Each of the conductive bumps 212 of the bottom gate thin film transistor amplifier 20 corresponds to the electrical connector 22 such that the conductive bumps 212 are aligned with the electrical contacts 22 to form the bottom gate. The thin film transistor amplifier and interface integrated module 20a. Thereafter, a conductive paste (such as silver paste) 23 or a solder paste is applied on the back surface of the bottom gate thin film transistor amplifier and the interface integration module 20a to facilitate subsequent back-to-back bonding with the microarray bioprobe 10. Referring to FIG. 3, the bottom gate thin film transistor amplifier and interface integration module 20a and the microarray bioprobe element 10 are integrated in the microarray bioprobe element 30 of the integrated bottom gate thin film transistor amplifier of the present invention. The microarray bioprobe elements 30 incorporating the bottomed gate thin film transistor amplifier of the present invention are joined together in a back-to-back manner by conductive paste or solder paste on the back side of the two. Furthermore, the present invention uses silver glue as a bonding agent, and the silver glue can be softened and separated after heating, which is advantageous for future replacement of the microarray bio-probe element 10, thereby reducing the integrated bottom gate 1325498. Maintenance cost of the microarray bioprobe element 30 of the crystal amplifier. On the other hand, a double-sided conductive film or a double-sided conductive tape may be used instead of the silver paste to bond the bottom gate thin film transistor amplifier and interface integration module 20a. And the microarray bioprobe element 10. According to the present invention, the microarray bioprobe and the bottom gate thin film transistor amplifier are integrated on the flexible substrate, so that the product of the present invention can be promoted into a roll type, which is advantageous for mass production. The above is only the embodiment of the present invention and is not intended to limit the scope of the present invention; all other equivalent changes or modifications which are not departing from the spirit of the present invention should be included in the following application. Within the scope of the patent.
12 1325498 【圖式簡單說明】 第一 A圖係本發明微陣列生物探針元件第一具體實施 例的截面示意圖； 第一 B圖係本發明微陣列生物探針另一較佳具體實施 例的截面示意圖； 第二A圖係本發明底閘極薄膜電晶體放大器的截面示 意圖； 第二B圖係本發明第二A圖之底閘極薄膜電晶體放大 器與介面整合模組的戴面示意圖； 第三圖係本發明整合有底閘極薄膜電晶體放大器之微 陣列生物探針元件的截面示意圖；及 第四圖係本發明反相放大器的電路不意圖。 【主要元件符號對照說明】 10—微陣列生物探針 20—底閘極薄膜電晶體放大 20a-…底閘極薄膜電晶體放大器與介面整合模組 21—介面板 22—電氣接頭 23-…導電膠 30----整合有底閘極薄膜電晶體放大器 之微陣列生物探針元件 100-…第一可撓式基板 101---·第一導電性連線 102-…第一導電性種子層103、103a-…生物探針 1〇4_…生物相容性導電層1〇5_…導電膠 200-…第二可撓式基板 202----第二導電性連線 203-…第二導電性層 204-…第一介電層 205a…-第一導電型底閘極薄膜電晶體 2〇5b…-第二導電型底閘極薄膜電晶體 13 1325498 206…-引線 207-…第二介電層 208-…第三介電層 2〇9a-…第三導電性連線 2〇9b…-第一焊墊 210-…保護層 211——第二焊墊 212-…導電性凸塊 2051a、2051b-__-底閉極 2052a—第*導電型源極/>及極 2052b—第二導電型源極/>及極 2053a-…第一導電型通道 2053b-…第二導電型通道12 1325498 BRIEF DESCRIPTION OF THE DRAWINGS FIG. 1A is a schematic cross-sectional view showing a first embodiment of the microarray bioprobe element of the present invention; FIG. 1B is another preferred embodiment of the microarray bioprobe of the present invention. 2B is a schematic cross-sectional view of a bottom gate thin film transistor amplifier of the present invention; FIG. 2B is a schematic view showing a bottom gate thin film transistor amplifier and an interface integrated module of the second embodiment of the present invention; The third drawing is a schematic cross-sectional view of a microarray bioprobe element incorporating a bottomed gate thin film transistor amplifier of the present invention; and the fourth drawing is not intended to be a circuit of the inverting amplifier of the present invention. [Main component symbol comparison description] 10—microarray bioprobe 20—bottom gate thin film transistor amplification 20a-... bottom gate thin film transistor amplifier and interface integration module 21—media panel 22—electrical connector 23-...conductive Glue 30----Microarray bio-probe element 100-...-first flexible substrate 101----first conductive connection 102-...first conductive seed integrated with bottom gate thin film transistor amplifier Layer 103, 103a-...bioprobe 1〇4_...biocompatible conductive layer 1〇5_...conductive paste 200-...second flexible substrate 202----second conductive connection 203-...second Conductive layer 204-...first dielectric layer 205a...-first conductive type bottom gate thin film transistor 2〇5b...-second conductive type bottom gate thin film transistor 13 1325498 206...-lead 207-...second Dielectric layer 208-...third dielectric layer 2〇9a-...third conductive connection 2〇9b...-first pad 210-...protective layer 211-second pad 212-...conductive bump 2051a, 2051b-__- bottom closed pole 2052a - *conducting source /> and pole 2052b - second conductivity type source /> and pole 2053a-...first conductivity type channel 2053b- ...the second conductive channel
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