[go: up one dir, main page]

TWI318014B - Production method for nitride semiconductor light emitting device - Google Patents

Production method for nitride semiconductor light emitting device

Info

Publication number
TWI318014B
TWI318014B TW095134064A TW95134064A TWI318014B TW I318014 B TWI318014 B TW I318014B TW 095134064 A TW095134064 A TW 095134064A TW 95134064 A TW95134064 A TW 95134064A TW I318014 B TWI318014 B TW I318014B
Authority
TW
Taiwan
Prior art keywords
light emitting
emitting device
production method
semiconductor light
nitride semiconductor
Prior art date
Application number
TW095134064A
Other languages
Chinese (zh)
Other versions
TW200731567A (en
Inventor
Hiroshi Osawa
Takashi Hodota
Original Assignee
Showa Denko Kk
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Showa Denko Kk filed Critical Showa Denko Kk
Publication of TW200731567A publication Critical patent/TW200731567A/en
Application granted granted Critical
Publication of TWI318014B publication Critical patent/TWI318014B/en

Links

TW095134064A 2005-09-16 2006-09-14 Production method for nitride semiconductor light emitting device TWI318014B (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2005270565A JP2007081312A (en) 2005-09-16 2005-09-16 Method of manufacturing nitride-based semiconductor light-emitting element
US72159005P 2005-09-29 2005-09-29

Publications (2)

Publication Number Publication Date
TW200731567A TW200731567A (en) 2007-08-16
TWI318014B true TWI318014B (en) 2009-12-01

Family

ID=37941257

Family Applications (1)

Application Number Title Priority Date Filing Date
TW095134064A TWI318014B (en) 2005-09-16 2006-09-14 Production method for nitride semiconductor light emitting device

Country Status (3)

Country Link
JP (1) JP2007081312A (en)
CN (1) CN100565949C (en)
TW (1) TWI318014B (en)

Families Citing this family (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100872678B1 (en) 2007-07-23 2008-12-10 엘지이노텍 주식회사 Manufacturing method of semiconductor light emitting device
KR100962900B1 (en) 2008-11-18 2010-06-10 엘지이노텍 주식회사 Semiconductor light emitting device and manufacturing method thereof
JP5310371B2 (en) * 2009-08-10 2013-10-09 ソニー株式会社 Semiconductor light emitting device and manufacturing method thereof
KR101081193B1 (en) 2009-10-15 2011-11-07 엘지이노텍 주식회사 Semiconductor light emitting device and fabrication method thereof
WO2011083923A2 (en) * 2010-01-07 2011-07-14 Seoul Opto Device Co., Ltd. Light emitting diode having electrode pads
CN102130221B (en) * 2010-01-13 2013-03-27 晶元光电股份有限公司 Method for forming light emitting diode
JP2011211097A (en) * 2010-03-30 2011-10-20 Sony Corp Method for manufacturing semiconductor device
JP5845557B2 (en) 2010-03-30 2016-01-20 ソニー株式会社 Manufacturing method of semiconductor light emitting device
JP5531794B2 (en) 2010-06-09 2014-06-25 日亜化学工業株式会社 Manufacturing method of semiconductor light emitting device
KR101125025B1 (en) 2010-07-23 2012-03-27 엘지이노텍 주식회사 Light emitting device and method for manufacturing the same
JP2012248795A (en) * 2011-05-31 2012-12-13 Toshiba Corp Semiconductor light-emitting element and method of manufacturing the same
CN103681980B (en) * 2012-09-25 2016-12-21 上海蓝光科技有限公司 A kind of cutting method of the light emitting diode containing back silver-plated reflecting layer
KR101969308B1 (en) * 2012-10-26 2019-04-17 삼성전자주식회사 Semiconductor light emitting device and manufacturing method of the same

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3259811B2 (en) * 1995-06-15 2002-02-25 日亜化学工業株式会社 Method for manufacturing nitride semiconductor device and nitride semiconductor device
CN1368764A (en) * 2001-01-31 2002-09-11 广镓光电股份有限公司 A structure of high-brightness blue light-emitting grains
US20030189215A1 (en) * 2002-04-09 2003-10-09 Jong-Lam Lee Method of fabricating vertical structure leds
JP3896044B2 (en) * 2002-07-11 2007-03-22 シャープ株式会社 Nitride-based semiconductor light-emitting device manufacturing method and product
KR100483049B1 (en) * 2003-06-03 2005-04-15 삼성전기주식회사 A METHOD OF PRODUCING VERTICAL GaN LIGHT EMITTING DIODES
CN100481532C (en) * 2004-01-21 2009-04-22 晶元光电股份有限公司 Light-emitting diode element, flip chip type light-emitting diode packaging structure and light reflection structure

Also Published As

Publication number Publication date
CN101263611A (en) 2008-09-10
TW200731567A (en) 2007-08-16
JP2007081312A (en) 2007-03-29
CN100565949C (en) 2009-12-02

Similar Documents

Publication Publication Date Title
TWI318439B (en) Method for manufacturing semiconductor device
PL2546192T3 (en) Light emitting device including semiconductor nanocrystals
GB2449595B (en) Group III nitride semiconductor light emitting device and method for producing the same
EP1861883B8 (en) Method of manufacturing a wavelength-converting semiconductor light-emitting device
EP2819190B8 (en) Semiconductor light emitting module and method for manufacturing the same
TWI373182B (en) Method for manufacturing semiconductor optical device
TWI366218B (en) Method for manufacturing semiconductor device
GB0823453D0 (en) Semiconductor light emitting element
TWI350599B (en) Light emitting device and method for manufacturing the same
TWI370562B (en) Semiconductor light-emitting device and method for producing semiconductor light-emitting device
TWI366283B (en) Nitride semiconductor light-emitting device and method for fabrication thereof
EP1984955A4 (en) GaN-BASED SEMICONDUCTOR LIGHT-EMITTING DEVICE AND METHOD FOR THE FABRICATION THEREOF
TWI370596B (en) Method for manufacturing semiconductor optical device
SG130975A1 (en) Fabrication of semiconductor devices for light emission
TWI371867B (en) Semiconductor light-emitting device
TWI349378B (en) Semiconductor light generating device
TWI340478B (en) Gallium nitride-based compound semiconductor light-emitting device
EP2190039B8 (en) Semiconductor light emitting device
TWI350600B (en) Semiconductor light emitting element
EP1913798A4 (en) Organic light emitting device and method for manufacturing the same
GB2420221B (en) Solid-state semiconductor light emitting device
GB2465122A8 (en) Vertical organic transistor, method for manufacturing vertical organic transistor, and light emitting element
GB0805044D0 (en) Method for producing group 3-5 nitride semiconductor and method for manufacturing light-emitting device
GB2443144B (en) Phosphors for light emitting devices
SG126899A1 (en) Light-emitting device, method for making the same,and nitride semiconductor substrate