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TWI317971B - A method for fabricating a semiconductor device - Google Patents

A method for fabricating a semiconductor device

Info

Publication number
TWI317971B
TWI317971B TW095130109A TW95130109A TWI317971B TW I317971 B TWI317971 B TW I317971B TW 095130109 A TW095130109 A TW 095130109A TW 95130109 A TW95130109 A TW 95130109A TW I317971 B TWI317971 B TW I317971B
Authority
TW
Taiwan
Prior art keywords
fabricating
semiconductor device
semiconductor
Prior art date
Application number
TW095130109A
Other languages
Chinese (zh)
Other versions
TW200713430A (en
Inventor
Ling Ma
Original Assignee
Int Rectifier Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from US11/504,740 external-priority patent/US7524726B2/en
Application filed by Int Rectifier Corp filed Critical Int Rectifier Corp
Publication of TW200713430A publication Critical patent/TW200713430A/en
Application granted granted Critical
Publication of TWI317971B publication Critical patent/TWI317971B/en

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/64—Double-diffused metal-oxide semiconductor [DMOS] FETs
    • H10D30/66—Vertical DMOS [VDMOS] FETs
    • H10D30/668—Vertical DMOS [VDMOS] FETs having trench gate electrodes, e.g. UMOS transistors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/64—Double-diffused metal-oxide semiconductor [DMOS] FETs
    • H10D30/66—Vertical DMOS [VDMOS] FETs
    • H10D30/665—Vertical DMOS [VDMOS] FETs having edge termination structures
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/20—Electrodes characterised by their shapes, relative sizes or dispositions 
    • H10D64/27—Electrodes not carrying the current to be rectified, amplified, oscillated or switched, e.g. gates
    • H10D64/311—Gate electrodes for field-effect devices
    • H10D64/411—Gate electrodes for field-effect devices for FETs
    • H10D64/511—Gate electrodes for field-effect devices for FETs for IGFETs
    • H10D64/517—Gate electrodes for field-effect devices for FETs for IGFETs characterised by the conducting layers
    • H10D64/519—Gate electrodes for field-effect devices for FETs for IGFETs characterised by the conducting layers characterised by their top-view geometrical layouts
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D12/00—Bipolar devices controlled by the field effect, e.g. insulated-gate bipolar transistors [IGBT]
    • H10D12/411—Insulated-gate bipolar transistors [IGBT]
    • H10D12/441—Vertical IGBTs
    • H10D12/461—Vertical IGBTs having non-planar surfaces, e.g. having trenches, recesses or pillars in the surfaces of the emitter, base or collector regions
    • H10D12/481—Vertical IGBTs having non-planar surfaces, e.g. having trenches, recesses or pillars in the surfaces of the emitter, base or collector regions having gate structures on slanted surfaces, on vertical surfaces, or in grooves, e.g. trench gate IGBTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/111—Field plates
    • H10D64/117—Recessed field plates, e.g. trench field plates or buried field plates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/20—Electrodes characterised by their shapes, relative sizes or dispositions 
    • H10D64/23—Electrodes carrying the current to be rectified, amplified, oscillated or switched, e.g. sources, drains, anodes or cathodes
    • H10D64/251—Source or drain electrodes for field-effect devices
    • H10D64/252—Source or drain electrodes for field-effect devices for vertical or pseudo-vertical devices
    • H10D64/2527—Source or drain electrodes for field-effect devices for vertical or pseudo-vertical devices for vertical devices wherein the source or drain electrodes are recessed in semiconductor bodies
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/20—Electrodes characterised by their shapes, relative sizes or dispositions 
    • H10D64/27—Electrodes not carrying the current to be rectified, amplified, oscillated or switched, e.g. gates
    • H10D64/311—Gate electrodes for field-effect devices
    • H10D64/411—Gate electrodes for field-effect devices for FETs
    • H10D64/511—Gate electrodes for field-effect devices for FETs for IGFETs
    • H10D64/512—Disposition of the gate electrodes, e.g. buried gates
    • H10D64/513—Disposition of the gate electrodes, e.g. buried gates within recesses in the substrate, e.g. trench gates, groove gates or buried gates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/20—Electrodes characterised by their shapes, relative sizes or dispositions 
    • H10D64/27—Electrodes not carrying the current to be rectified, amplified, oscillated or switched, e.g. gates
    • H10D64/311—Gate electrodes for field-effect devices
    • H10D64/411—Gate electrodes for field-effect devices for FETs
    • H10D64/511—Gate electrodes for field-effect devices for FETs for IGFETs
    • H10D64/514—Gate electrodes for field-effect devices for FETs for IGFETs characterised by the insulating layers
    • H10D64/516—Gate electrodes for field-effect devices for FETs for IGFETs characterised by the insulating layers the thicknesses being non-uniform
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/20—Electrodes characterised by their shapes, relative sizes or dispositions 
    • H10D64/27—Electrodes not carrying the current to be rectified, amplified, oscillated or switched, e.g. gates
    • H10D64/311—Gate electrodes for field-effect devices
    • H10D64/411—Gate electrodes for field-effect devices for FETs
    • H10D64/511—Gate electrodes for field-effect devices for FETs for IGFETs
    • H10D64/517—Gate electrodes for field-effect devices for FETs for IGFETs characterised by the conducting layers
TW095130109A 2005-08-17 2006-08-16 A method for fabricating a semiconductor device TWI317971B (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US70902005P 2005-08-17 2005-08-17
US11/504,740 US7524726B2 (en) 2005-08-17 2006-08-15 Method for fabricating a semiconductor device

Publications (2)

Publication Number Publication Date
TW200713430A TW200713430A (en) 2007-04-01
TWI317971B true TWI317971B (en) 2009-12-01

Family

ID=37758372

Family Applications (1)

Application Number Title Priority Date Filing Date
TW095130109A TWI317971B (en) 2005-08-17 2006-08-16 A method for fabricating a semiconductor device

Country Status (4)

Country Link
EP (1) EP1917683A4 (en)
JP (1) JP2009505433A (en)
TW (1) TWI317971B (en)
WO (1) WO2007022316A2 (en)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5206107B2 (en) * 2007-09-06 2013-06-12 トヨタ自動車株式会社 Semiconductor device
JP5633992B2 (en) * 2010-06-11 2014-12-03 トヨタ自動車株式会社 Semiconductor device and manufacturing method of semiconductor device
US20130168765A1 (en) * 2012-01-04 2013-07-04 Vishay General Semiconductor Llc Trench dmos device with improved termination structure for high voltage applications
JP6173987B2 (en) * 2013-09-20 2017-08-02 サンケン電気株式会社 Semiconductor device
CN118786531A (en) * 2022-03-03 2024-10-15 三菱电机株式会社 Semiconductor device and method for manufacturing semiconductor device

Family Cites Families (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2647884B2 (en) * 1988-01-27 1997-08-27 株式会社日立製作所 Method for manufacturing semiconductor device
US5430315A (en) * 1993-07-22 1995-07-04 Rumennik; Vladimir Bi-directional power trench MOS field effect transistor having low on-state resistance and low leakage current
JP3904648B2 (en) * 1997-01-31 2007-04-11 株式会社ルネサステクノロジ Semiconductor device
JPH1197689A (en) * 1997-09-17 1999-04-09 Nec Corp Semiconductor device
US6462376B1 (en) * 1999-01-11 2002-10-08 Fraunhofer-Gesellschaft Zur Foerderung Der Angewandten Forschung E.V. Power MOS element and method for producing the same
US6838735B1 (en) * 2000-02-24 2005-01-04 International Rectifier Corporation Trench FET with non overlapping poly and remote contact therefor
US6580123B2 (en) * 2000-04-04 2003-06-17 International Rectifier Corporation Low voltage power MOSFET device and process for its manufacture
US6309929B1 (en) * 2000-09-22 2001-10-30 Industrial Technology Research Institute And Genetal Semiconductor Of Taiwan, Ltd. Method of forming trench MOS device and termination structure
JP4270773B2 (en) * 2001-06-08 2009-06-03 三洋電機株式会社 1 chip dual type insulated gate type semiconductor device
GB0122121D0 (en) * 2001-09-13 2001-10-31 Koninkl Philips Electronics Nv Edge termination in a trench-gate mosfet
GB2381122B (en) * 2001-10-16 2006-04-05 Zetex Plc Termination structure for a semiconductor device
JP4178789B2 (en) * 2001-12-18 2008-11-12 富士電機デバイステクノロジー株式会社 Semiconductor device and manufacturing method thereof
US6838722B2 (en) * 2002-03-22 2005-01-04 Siliconix Incorporated Structures of and methods of fabricating trench-gated MIS devices
US6861701B2 (en) * 2003-03-05 2005-03-01 Advanced Analogic Technologies, Inc. Trench power MOSFET with planarized gate bus

Also Published As

Publication number Publication date
EP1917683A4 (en) 2008-11-05
TW200713430A (en) 2007-04-01
EP1917683A2 (en) 2008-05-07
WO2007022316A3 (en) 2007-07-12
WO2007022316A2 (en) 2007-02-22
JP2009505433A (en) 2009-02-05

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Legal Events

Date Code Title Description
MM4A Annulment or lapse of patent due to non-payment of fees