•1301667 •-九、發明說明： 【發明所屬之技術領域】 本發明係有關於一種顯示元件及其製造方法，特別 是有關一種有機電激發光顯示元件及其製造方法。 【先前技術】 有機電激發光顯示器（organic electroluminescent devices)(又稱為有機發光二極體（organic light emitting φ diode，OLED)顯示器）其發光原理係在有機分子材料（依 分子量大小可分為小分子材料（small molecule material) 及聚合物材料（polymer material))施加一外加電場使其產 生發光現象。有機電激發光顯示器（organic electroluminescent devices)因其為自發光性（self emission) 元件，可陣列式顯示（dot matrix type display)，具有輕 薄、高對比、低消耗功率、高解析度、反應時間短（fast response time)、不需背光源及廣視角等特性，且其面板 • 尺寸可由4mm微型顯示器至1〇〇吋之大型戶外看板顯示 為’被視為下一世代之平面面板顯示器（打panel diSplay， FPD)。除了顯示器之應用外，由於有機電激發光元件更 可在輕薄、可撓曲之材質上形成陣列式結構，使其在應 用上更加的廣泛，尤其是非常適合應用於照明。一般預 估有機電激發光元件其發光效率若能提昇至1〇〇Lm/w以 上，有機電激發光顯示器裝置即有機會取代一般照明光 源0 0773-A31699TWF;P93117;Wayne 6 1301667 : 明茶照第1圖， 發光元件，且—跑A —開關電晶體102控制一有機電激 而，有機電激發光元3體104麵接到一電源線…。然 問題，特別是有機* G6存在有晝素間均勾性不佳的 會產生亮度光元件106在長— 【發明内容】 因此’為解決±述問題 機電激發光顯示&月之目的為解決有 器晝素間之特性更題，而使得有機電激發光顯示 本發，提供一種有機電激發光顯示元件，包括一晝 板早：開素單元包括-包括控制區和感測區之基 :、件和一驅動元件位於控制區上。-光感測 ;:::、測區上’其中光感測器係為-薄膜電晶體：-一命光單元位於感測區中，且可照亮光感測器。 哭：：=接到光感測器和驅動元件，其中藉由光感測 j應到有機電激發光單元照射到光感測器之光線，產 二對應到有機電激發光單元之光電流，如此，藉由光 …周整電容器之電壓，以控制通過驅動元件之電流， 因此，改變有機電激發光單元之照度。 、、在本發明之一實施例中，開關元件，驅動元件和光 感測器係為上閘極電晶體，且開關元件，驅動元件和光 感測裔之主動層係為同一層。 0773-A31699TWF;P93117; Wayne 7 1301667 、、本發明提供一種有機電激發光顯示元件之製造方 首先提供一包括控制區和感測區之基板，並形成 一主動層於基板之控制區和感測區上。其後，圖形化主 :層’以於控制區中形成第一和第二主動層，和於感測 =成光感測主動層’形成—閘極介電層於於主動層和 土!反之感測區上。接著，圖形化導電層，以於控制區形 士弟-和第二閘極，形成一介電層，至少覆蓋第一閘極、 弟二閘極和閘極介電層。後續，形成—光感測閘極於感 測區之閘極介電層上，形成一 〇LED單元於部分之控制 區和感測區上。 【實施方式】 以下將以實施例詳細說明做為本發明之參考，且 例係伴隨著圖示說明之。在圖示或描述中，相似或相同 ，部分係使用相同之圖號。在圖示中，實施例之形狀或 疋厚度可擴大，以簡化或是方便標示。圖示中元件之 分將以描述說明之。可了解的是，切示或描述之元件， 可以具有各種熟f此技藝之人所知的形式。此外，當敛 層,位於一基板或是另一層上時，此層可直接：於 基板或是另一層上，或是其間亦可以有中介層。 在說明書中，有關，，於基板上，，(〇vaeriying伽 咖购）、，，於該層上，，(ab〇ve如或”於膜上、* 版)等的敘述係表示與當層表面的相對位置關係，其東 略中間存在的各層，因此’上述敘述可表示為與當層^ 0773-A31699TWF;P93117； Wa^ δ 13〇1667 鬌 :接接觸或中間有一或更多層相隔的非接觸狀態。 第2圖係為本發明一實施例具有補償元件之有機電 激發光顯示器之電路示意圖。請參照第2圖，一有機電 政發光顯示元件包括一晝素單元2〇，且在晝素單元2〇 中—例如開關積體電路（switch 1C)或是開關電晶體之開 關元件206控制有機電激發光顯示單元2〇2。晝素單元 〇亦包括一連接到電源線VP之驅動元件2〇4(亦可稱為 • 驅動積體電路），其中通過驅動元件2〇4之電流係可控制 有機電激發光單元202之照度。開關元件2〇6係由行資 料線220和列掃描線230所控制，在本發明之一實施例 中 電谷器208係輕接到驅動元件204之閘極，其中 琶各裔208更耦接一例如薄膜電晶體之光感測器2丨〇，在 本發明之一較佳實施例中，光感測器21〇係為一上閘極 薄膜電晶體。另外，可對電容器208之電壓進行調整， 以根據光感測器210所感測到之有機電激發光單元202 $ 之照度而控制通過驅動元件204的電流，如此，可改變 有機電激發光單元202之照度212做為補償。 第3L圖係繪示本發明一實施例有機發光單元之一 晝素單元20的剖面圖，第3A圖〜第3L圖係繪示本發明 一實施例有機發光單元之一晝素單元20的製程中介剖面 圖。首先，請參照第3A圖，提供一基板302，基板302 包括一控制區3〇4、一感測區306和一電容區308。於基 板302上形成一缓衝層310，緩衝層310可以是氧化石夕、 氮化矽或是氮氧化矽所組成，在本發明之一較佳實施例 0773-A31699TWF;P93117;Wayne 9 1301667 二中，緩衝層310係為氧化矽和氮化矽之堆疊層，氮化矽 之厚度可約為350〜650埃，氧化矽之厚度可約為 1000〜1600 埃。 接下來，形成一導電層（未繪示）於缓衝層310上， $黾層可以疋一多晶梦所組成，舉例來說，導電層可首 先以化學氣相沉積方法沉積一非晶矽，再以準分子雷射 退火（Excimer Laser Annealing，以下可簡稱ELA)將其轉 換成多晶矽。之後，將導電層以傳統之微影和蝕刻方法 鲁 定義成一第一主動層312和一第二主動層314於基板302 之控制區304上方，並且，於基底302之感測區306上 形成光感測主動層316,並於基底302之電容區308上形 成一下電極318。由於上述之非晶矽層係經由準分子雷射 退火處理，因此第一主動層312、第二主動層314和光感 測主動層316係轉換成具有較高電子傳輸速度之多晶矽。 其後，如第3B圖所示，以一光阻層320遮住第二 主動層314，而對第一主動層312進行一通道佈植步驟 ⑩ （channel doping)，在本發明之一較佳實施例中，此佈 植步驟可佈植B +，而其摻雜量可為〇〜lE13/cm2。 後續，請參照第3 C圖，再形成另一光阻330分別 遮住第一主動層312和光感測主動層316之通道區322 和324,並隨後佈植N+離子321入第一主動層312和光 感測主動層316,以形成N型電晶體之源極332、汲極334 和通道322，及光感測電晶體之源極336、汲極338和通 道324，在本發明之一較佳實施例中，此佈植步驟可佈植 0773-A31699TWF;P93117;Wayne 10 1301667 * 磷，而其摻雜量可為1E14〜lE16/cm2，並且，佈植後， 下電極層318可形成為N-摻雜型態。 接者，請參照第3D圖，移除上述光阻層，並毯覆 性沉積一閘極介電層340於控制區304之第一主動層312 和第二主動層314上、感測區306的光感測主動層316 和電容區308之下電極318上，閘極介電層340可以為 氧化矽、氮化矽、氮氧化矽、其組合或是其堆疊層，或 是其它高介電材料所組成。需注意的是，閘極介電層340 φ 在電容區308係供作電容介電層。 後續，請參照第3E圖，沉積一閘極導電層（未繪示） 於閘極介電層340上，閘極導電層可以為摻雜之多晶矽 或是金屬，在本發明之一較佳實施例中，閘極導電層可 以為厚度約為1500〜2500埃之Mo。 接著，以傳統之微影和蝕刻方法對閘極導電層進行 圖形化，以在第一主動層312上方形成N型電晶體閘極 342，在第二主動層314上方形成P型電晶體閘極344， φ 且於電容區308上形成一上電極346。之後，形成例如光 阻之光感測輕掺雜罩幕層348於光感測主動層316之通 道區324上，其中光感測輕摻雜罩幕層348之寬度小於 通道區324之寬度。 在形成上述閘極342、344和光感測輕摻雜罩幕層 348之後，可進行一輕摻雜步驟，以例如離子佈植的方 法，於N型電晶體第一主動層312通道區322兩侧形成 輕摻雜源極/没極區350(light doped drain，以下可簡稱 0773-A31699TWF;P93117;Wayne 11 1301667 ldd)，於光感測主動層 輕摻雜源極/汲極區352 n s兩側形成另外的 汲極345和通道341，如;^成P型電晶體之源極⑷、 一 士此，在控制區304形成第2圖 不之N型之開關元件2〇6和？型之驅動元件2〇4。圖所BACKGROUND OF THE INVENTION 1. Field of the Invention This invention relates to a display element and a method of fabricating the same, and more particularly to an organic electroluminescent display element and a method of fabricating the same. [Prior Art] Organic electroluminescent devices (also known as organic light emitting φ diodes (OLED) displays) are based on organic molecular materials (which can be divided into small molecular weights). A small molecule material and a polymer material apply an applied electric field to cause luminescence. Organic electroluminescent devices are dot matrix type displays because of their self-emitting elements. They are light and thin, have high contrast, low power consumption, high resolution, and short reaction time. (fast response time), no need for backlight and wide viewing angle, and its panel size can be displayed from 4mm microdisplay to 1〇〇吋 large outdoor billboard as 'flat panel display as the next generation (panel) diSplay, FPD). In addition to the application of the display, the organic electroluminescent element can form an array structure on a thin and flexible material, making it more widely used in applications, especially suitable for illumination. It is generally estimated that if the luminous efficiency of the organic electroluminescent device can be increased to more than 1〇〇Lm/w, the organic electroluminescent display device has the opportunity to replace the general illumination source 0 0773-A31699TWF; P93117; Wayne 6 1301667: Mingcha photo Fig. 1, a light-emitting element, and - run A - switch transistor 102 controls an organic charge, and organic light-excited light element 3 body 104 is connected to a power line. However, in particular, the presence of organic * G6 in the presence of a poor quality between the elements of the halogen will produce a brightness of the light element 106 in the long - [Summary] Therefore, the purpose of solving the problem is to solve the problem of electromechanical excitation light & The organic electroluminescence display element is provided, and the organic electroluminescence display element is provided, including a slab early: the open element includes: a base including a control area and a sensing area: The member and a drive member are located on the control area. - Light sensing;:::, on the measuring area where the light sensor is - thin film transistor: - a light life unit is located in the sensing area, and can illuminate the light sensor. Cry::=Connected to the photosensor and the driving component, wherein the photo-sensing j should be applied to the light of the organic electro-optic excitation unit to the photosensor, and the photocurrent corresponding to the organic electro-excitation unit is generated. Thus, the voltage of the capacitor is controlled by the voltage of the capacitor to control the current passing through the driving element, thereby changing the illuminance of the organic electroluminescent unit. In one embodiment of the invention, the switching element, the driving element and the photo sensor are upper gate transistors, and the switching elements, the driving elements and the active layer of the optical sensing system are in the same layer. 0773-A31699TWF; P93117; Wayne 7 1301667, the present invention provides a manufacturer of an organic electroluminescent display device, first providing a substrate including a control region and a sensing region, and forming an active layer on the substrate control region and sensing On the district. Thereafter, the patterned main: layer 'is formed in the first and second active layers in the control region, and is formed in the sense = photo-sensing active layer' - the gate dielectric layer is in the active layer and the soil! On the sensing area. Next, the conductive layer is patterned to form a dielectric layer covering at least the first gate, the second gate, and the gate dielectric layer in the control region and the second gate. Subsequently, a photo-sensing gate is formed on the gate dielectric layer of the sensing region to form a 〇LED unit on a portion of the control region and the sensing region. [Embodiment] The following is a detailed description of the embodiments, and is illustrated by the accompanying drawings. In the drawings or descriptions, similar or identical parts are used in the same drawing. In the drawings, the shape or thickness of the embodiment can be enlarged to simplify or facilitate the marking. The components in the illustrations will be described in the description. It will be appreciated that the elements shown or described may be in a variety of forms known to those skilled in the art. In addition, when the layer is on one substrate or another layer, the layer may be directly on the substrate or another layer, or may have an interposer therebetween. In the specification, related to, on the substrate, (〇vaeriying gamma),, on the layer, (ab〇ve or "on the film, * version", etc. The relative positional relationship of the surface, the layers existing in the middle of the east, so 'the above description can be expressed as the layer ^ 0773-A31699TWF; P93117; Wa ^ δ 13〇1667 鬌: contact or one or more layers in the middle 2 is a schematic circuit diagram of an organic electroluminescent display having a compensating element according to an embodiment of the present invention. Referring to FIG. 2, an organic electroluminescent display element includes a pixel unit 2〇, and The halogen element 2 is controlled, for example, a switch integrated circuit (switch 1C) or a switching transistor 206 of the switching transistor to control the organic electroluminescent display unit 2〇2. The pixel unit 〇 also includes a driving connected to the power line VP. Element 2〇4 (also referred to as • drive integrated circuit), wherein the current through the driving element 2〇4 can control the illumination of the organic electroluminescent unit 202. The switching element 2〇6 is composed of the row data line 220 and the column Scanned by line 230, in this hair In one embodiment, the electric grid 208 is lightly connected to the gate of the driving component 204, wherein the 208 is further coupled to a photosensor 2, such as a thin film transistor, in a preferred embodiment of the present invention. In the example, the photo sensor 21 is an upper gate thin film transistor. In addition, the voltage of the capacitor 208 can be adjusted to sense the illumination of the organic electroluminescent unit 202 $ according to the photosensor 210. The current passing through the driving element 204 is controlled, so that the illuminance 212 of the organic electroluminescent unit 202 can be changed as compensation. FIG. 3L is a cross-sectional view showing a pixel unit 20 of an organic light emitting unit according to an embodiment of the present invention. 3A to 3L are process cross-sectional views showing a process of a halogen unit 20 of an organic light-emitting unit according to an embodiment of the present invention. First, referring to FIG. 3A, a substrate 302 is provided, and the substrate 302 includes a control region 3. 4, a sensing region 306 and a capacitor region 308. A buffer layer 310 is formed on the substrate 302, and the buffer layer 310 may be composed of oxidized oxide, tantalum nitride or bismuth oxynitride, in the present invention. Preferred Embodiment 0773-A31699TWF; P93117; Wayne 9 1 In 301667, the buffer layer 310 is a stacked layer of tantalum oxide and tantalum nitride, the thickness of the tantalum nitride may be about 350 to 650 angstroms, and the thickness of the yttrium oxide may be about 1000 to 1600 angstroms. Next, a conductive layer is formed. The layer (not shown) is on the buffer layer 310, and the 黾 layer can be composed of a polycrystalline dream. For example, the conductive layer can first deposit an amorphous germanium by chemical vapor deposition, and then the excimer mine Excimer Laser Annealing (hereinafter referred to as ELA) converts it into polycrystalline germanium. Thereafter, the conductive layer is defined as a first active layer 312 and a second active layer 314 over the control region 304 of the substrate 302 by conventional lithography and etching, and light is formed on the sensing region 306 of the substrate 302. The active layer 316 is sensed and a lower electrode 318 is formed on the capacitive region 308 of the substrate 302. Since the amorphous germanium layer described above is subjected to excimer laser annealing treatment, the first active layer 312, the second active layer 314, and the photo-sensing active layer 316 are converted into polysilicon having a higher electron transport speed. Thereafter, as shown in FIG. 3B, the second active layer 314 is covered by a photoresist layer 320, and a channel doping step 10 (channel doping) is performed on the first active layer 312, which is preferred in the present invention. In an embodiment, the implantation step can implant B + and the doping amount can be 〇 lE13/cm 2 . Subsequently, please refer to FIG. 3C, and another photoresist 330 is formed to cover the channel regions 322 and 324 of the first active layer 312 and the photo sensing active layer 316, respectively, and then implant the N+ ions 321 into the first active layer 312. The active layer 316 is sensed to form a source 332, a drain 334 and a channel 322 of the N-type transistor, and a source 336, a drain 338 and a channel 324 of the photo-sensing transistor, preferably in one of the present inventions. In an embodiment, the implantation step can implant 0773-A31699TWF; P93117; Wayne 10 1301667* phosphorus, and the doping amount thereof can be 1E14~1E16/cm2, and after implantation, the lower electrode layer 318 can be formed into N - doped form. Referring to FIG. 3D, the photoresist layer is removed, and a gate dielectric layer 340 is blanket deposited on the first active layer 312 and the second active layer 314 of the control region 304, and the sensing region 306. The light sensing active layer 316 and the lower electrode 318 of the capacitor region 308, the gate dielectric layer 340 may be tantalum oxide, tantalum nitride, tantalum oxynitride, a combination thereof or a stacked layer thereof, or other high dielectric Made up of materials. It should be noted that the gate dielectric layer 340 φ is used as a capacitor dielectric layer in the capacitor region 308. Subsequently, please refer to FIG. 3E to deposit a gate conductive layer (not shown) on the gate dielectric layer 340, and the gate conductive layer may be doped polysilicon or metal, in a preferred embodiment of the present invention. In one example, the gate conductive layer may be Mo having a thickness of about 1500 to 2500 angstroms. Next, the gate conductive layer is patterned by a conventional lithography and etching method to form an N-type transistor gate 342 over the first active layer 312 and a P-type transistor gate over the second active layer 314. 344, φ and an upper electrode 346 is formed on the capacitor region 308. Thereafter, a light-sensing lightly doped mask layer 348, such as a photoresist, is formed over the channel region 324 of the light-sensing active layer 316, wherein the width of the light-sensing lightly doped mask layer 348 is less than the width of the channel region 324. After forming the gates 342, 344 and the light sensing lightly doped mask layer 348, a light doping step can be performed, for example, by ion implantation, in the N-type transistor first active layer 312 channel region 322 The side forms a light doped drain 350 (light doped drain, hereinafter referred to as 0773-A31699TWF; P93117; Wayne 11 1301667 ldd), in the light sensing active layer lightly doped source/drain region 352 ns The side forms another drain 345 and a channel 341, such as a source (4) of a P-type transistor, and a switching element 2〇6 of the N-type of the second figure is formed in the control region 304. Type of drive element 2〇4. Map
錢’請《第3F圖’移除上述之光感 :層州，並毯覆性的沉積-介電層⑽閑極介= 型電晶體閘極342、p型電晶體閘極⑷，及2 區308之上包極346上。感測區3〇6中之閘極介電 和介電層354之結合係供作有機發光元件之光感測^1〇 的光感測閘極介電層。 一般來說，介電層354可依照產品的需求或製 未而決定其組成和厚度’舉例來說，介電層354可由氧 化石夕、氮化石夕、氮氧化石夕、聚烯銨(Polyimide)、旋轉破二 (SOG)、氟碎玻璃FSG和/或其它材料所組成，在本發明 ，較佳實施例中’介電層354係為氧化朴氮化奴堆 δ層，其中氧化矽之厚度約為15〇〇〜25〇〇埃，氮化矽之 #厚度約為2500〜3500埃。之後，形成一光感測閘極356 於感測區306之介電層354上，如此，形成第2圖所示 之光感測裔210。在本發明之一實施例中，光感測器21〇 可以是一例如上閘極電晶體之電晶體元件。 光感測閘極356可以是透明的，以使光可以穿透光 感測閘極356,令光感測元件210可產生電流，舉例來說， 光感測閘極356可由銦錫氧化物（indium tin oxide，ΙΤΟ) 或是銦鋅氧化物（indium zinc oxide，ITO)所組成。之後， 0773-Α31699TWF;P93117;Wayne 12 1301667 • /形成一例如氮化矽之第一保護層358於光感測閘極356 和介電層354上，以供保護用。 請參照第3G圖，以一般的微影和蝕刻方法圖形化 第一保護層358、介電層354和閘極介電層340，以形成 暴露第一主動層312、第二主動層314、光感測主動層 316、N型電晶體閘極342、P型電晶體閘極344和/或光 感測閘極356之開口 360,以供後續製程之金屬線連接用。 之後，請參照第3H圖，毯覆性的沉積一金屬層（未 ⑩ 繪示），且之後以一般的微影和#刻方法圖形化金屬層， 以於上述開口中形成導電接觸362。 請參照第31圖，形成一例如氮化矽之第二保護層 364於導電接觸362和第一保護層358上，以供作保護， 舉例來說，第二保護層364之厚度可以為約2500埃〜3500 埃。 接下來，請參照第3J圖，圖形化第二保護層364以 形成暴露導電接觸362之開口，其後，形成一例如銦錫 • 氧化物之晝素電極層366(供作OLED單元之陽極）於第二 保護層364上，且電性連接導電接觸362。後續，請參照 第3K圖，形成一例如有機物或是氧化物之晝素定義層 368於部分之第二保護層364和晝素電極層366上，特別 是，晝素定義層368暴露部分或是全部之光感測器。 請參照第3L圖，形成一有機發光層370(OLED層） 於晝素電極層366和晝素定義層368上。在本發明之一 實施例中，位於晝素電極層366(亦可稱為陽極或是第一 0773-A31699TWF;P93117;Wayne 13 1301667 :=韋Γ)上之有機發光層370枚序包括電洞注入層、 二輪層、有機發光材料層、電子傳輸層和電子注入 二：：加電壓於有機發光層370上時，電子和電洞穿 傳輸層和電洞傳輸層’而分別進入有機發光材料 二著=7結合而釋放能量，以回到基礎狀態，特別是， =有機發光材料之不同，釋放的能量可表現出不同的 顔色’例如紅色、綠色或是藍色。 i μ之後，於有機發光層37G上形成—陰極372(亦可稱 > =二OLED電極)’陰極372〜是例如銘、銀或是其 有向反射係數適合材料的反射層，如此，晝素電極 層366、有機發光層370和陰極372構成第2該示之有 =光單元2_LED單元)’而形成一向下發光之有機 琶说發光元件。 如第2圖和第3L圖所示，在本發明上述之較佳實施 例中’較佳為多晶石夕所組成且包括振接州、没極338和 通:€ 324之光感測主動層316、介電層354和其上之光感 h則閘極356構成一光感測薄膜電晶題。p型態電晶體 204可供作一驅動元件，且心態電晶體可供作一 開關元件。光感測器210係產生光電流，而光電流之大 小係由OLED單元202之亮度而決定，因此，可調整耦 接到驅動it件204之電容器的電壓，以根據光感測 态210所偵測到之有機發光單元2〇2之照度，控 驅動元件204的電流，因此，可改變有機發光單元2〇2 之照度以做㈣償’如此，在有機電機發光元件運作一 0773-A31699TWF;P93117;Wayne 14 ,1301667 •、段長時間後，可以上述之内部補償機制改進有機發光單 元之亮度均勻性。 第4圖係顯示第2圖或是第3L圖之晝素單元可併入 一顯示面板中（其在此，係以顯示面板30標示），而其可 以是OLED面板，面板可以為各種型態電子元件之一部 分（其在此，係以電子元件50標示）。一般來說，電子元 件包括OLED面板和輸入單元，更甚者，輸入單元係操 作性的麵接到OLED面板，且提供輸入訊號（例如晝面訊 φ 號）至面板以產生影像。電子元件可以是例如手機、數位 相機、個人行動助理（personal digital asistant，PDA)、筆 記型電腦、桌上型電腦、電視機、車用顯示器或是影音 播放器。 雖然本發明已以較佳實施例揭露如上，然其並非用 以限定本發明，任何熟習此技藝者，在不脫離本發明之 精神和範圍内，當可作些許之更動與潤飾，因此本發明 之保護範圍當視後附之申請專利範圍所界定者為準。 【圖式簡單說明】 第1圖係揭示有機電激發光顯示器面板存在有晝素 間均勻性不佳的問題。 第2圖係為本發明一實施例具有補償元件之有機電 激發光顯示器之電路示意圖。 第3A圖〜第3L圖係繪示本發明一實施例形成一感 測元件補償有機發光元件之製程中介剖面圖。 0773-A31699TWF;P93117;Wayne 15 1301667 * • 第4圖係揭示本發明一實施例之電子元件之示意 圖。 3 0〜顯不面板， 102〜開關電晶體； 106〜有機電激發光元件； 【主要元件符號說明】 20〜晝素單元； 50〜電子元件； 104〜驅動電晶體， 202〜有機電激發光顯示單元； 204〜驅動元件； 206〜開關元件； 210〜光感測器； 3 04〜控制區， 3 0 8〜電容區， 312〜第一主動層； 3 16〜光感測主動層； 320〜光阻層； 322〜通道區； 330〜光阻 208〜電容器； 302〜基板； 306〜感測區， 310〜缓衝層； 314〜第二主動層； 318〜下電極； 3 21〜N +離子； 324〜通道； 3 3 4〜没極 338〜汲極 341〜通道 3 4 3〜源極 3 4 5〜没極； 3 3 2〜源極； 3 3 6〜源極； 340〜閘極介電層； 342〜N型電晶體閘極； 344〜P型電晶體閘極； 346〜上電極； 348〜光感測輕摻雜罩幕層； 0773-A31699TWF;P93117;Wayne 16 1301667 3 5 0〜輕摻雜源極/没極區； 352〜輕摻雜源極/没極區； 354〜介電層； 358〜第一保護層； 362〜導電接觸； 366〜晝素電極層； 370〜有機發光層； 3 5 6〜光感測閘極 360〜開口； 364〜第二保護層 368〜畫素定義層 372〜陰極。Money 'Please 3F' to remove the above light perception: layer state, and blanket deposition - dielectric layer (10) idle polarity = type transistor gate 342, p type transistor gate (4), and 2 Zone 308 is above the pole 346. The combination of the gate dielectric and the dielectric layer 354 in the sensing region 3〇6 serves as a light sensing gate dielectric layer for the light sensing of the organic light emitting device. In general, the dielectric layer 354 can be determined according to the requirements of the product or the composition thereof. For example, the dielectric layer 354 can be made of oxidized stone, cerium nitride, nitrous oxide, and polyallyl (Polyimide). In the present invention, in the preferred embodiment, the dielectric layer 354 is a layer of oxidized yttrium oxide yttrium, wherein yttrium oxide is composed of oxidized lanthanum oxide (FSG), fluorine slag glass FSG and/or other materials. The thickness is about 15 〇〇 25 〇〇 Å, and the thickness of 矽 约为 is about 2500 〜 3500 Å. Thereafter, a photo-sensing gate 356 is formed on the dielectric layer 354 of the sensing region 306, thus forming the photo-sensing person 210 shown in FIG. In one embodiment of the invention, photosensor 21A can be a transistor element such as an upper gate transistor. The light sensing gate 356 can be transparent such that light can penetrate the light sensing gate 356 such that the light sensing element 210 can generate current. For example, the light sensing gate 356 can be made of indium tin oxide ( Indium tin oxide (ΙΤΟ) or indium zinc oxide (ITO). Thereafter, 0773-Α31699TWF; P93117; Wayne 12 1301667 •/ Form a first protective layer 358 such as tantalum nitride on photo-sensing gate 356 and dielectric layer 354 for protection. Referring to FIG. 3G, the first protective layer 358, the dielectric layer 354, and the gate dielectric layer 340 are patterned by a general lithography and etching method to form the exposed first active layer 312, the second active layer 314, and the light. The active layer 316, the N-type transistor gate 342, the P-type transistor gate 344, and/or the opening 360 of the photo-sensing gate 356 are sensed for subsequent processing of metal lines. Thereafter, referring to FIG. 3H, a metal layer (not shown) is blanket deposited, and then the metal layer is patterned in a general lithography and #etching manner to form a conductive contact 362 in the opening. Referring to FIG. 31, a second protective layer 364 such as tantalum nitride is formed on the conductive contact 362 and the first protective layer 358 for protection. For example, the thickness of the second protective layer 364 may be about 2,500. Ang ~ 3500 angstroms. Next, referring to FIG. 3J, the second protective layer 364 is patterned to form an opening exposing the conductive contact 362, and thereafter, a halogen electrode layer 366 such as indium tin oxide is provided (for the anode of the OLED unit) The second protective layer 364 is electrically connected to the conductive contact 362. Subsequently, referring to FIG. 3K, a halogen defining layer 368 such as an organic or oxide is formed on a portion of the second protective layer 364 and the halogen electrode layer 366. In particular, the halogen defining layer 368 is exposed or All light sensors. Referring to FIG. 3L, an organic light-emitting layer 370 (OLED layer) is formed on the halogen electrode layer 366 and the halogen defining layer 368. In an embodiment of the present invention, the organic light-emitting layer 370 on the halogen electrode layer 366 (also referred to as the anode or the first 0773-A31699TWF; P93117; Wayne 13 1301667: = Wei Wei) includes a hole The injection layer, the second wheel layer, the organic light-emitting material layer, the electron transport layer, and the electron injection layer 2: when the voltage is applied to the organic light-emitting layer 370, the electrons and the holes penetrate the transport layer and the hole transport layer and enter the organic light-emitting material respectively =7 combines to release energy to return to the basic state, in particular, = organic light-emitting material, the released energy can show different colors 'such as red, green or blue. After i μ, a cathode 372 (also referred to as > = two OLED electrodes) is formed on the organic light-emitting layer 37G. The cathode 372 is, for example, a reflective layer of indium, silver or a material having a directional reflection coefficient, such that 昼The element electrode layer 366, the organic light-emitting layer 370, and the cathode 372 constitute a second light-emitting unit 2_LED unit)' to form a light-emitting organic light-emitting element. As shown in FIG. 2 and FIG. 3L, in the above preferred embodiment of the present invention, it is preferably composed of polycrystalline spine and includes a photo-sensing active including a vibrating state, a dipole 338, and a pass: €324. The layer 316, the dielectric layer 354, and the light sensation h thereon constitute a photo-sensing thin film electromorphic problem. The p-type transistor 204 can be used as a driving element, and the mental transistor can be used as a switching element. The photosensor 210 generates a photocurrent, and the magnitude of the photocurrent is determined by the brightness of the OLED unit 202. Therefore, the voltage coupled to the capacitor driving the member 204 can be adjusted to detect according to the photo sensing state 210. Measure the illuminance of the organic light-emitting unit 2〇2, and control the current of the driving element 204. Therefore, the illuminance of the organic light-emitting unit 2〇2 can be changed to do (4) compensation. Thus, the organic motor light-emitting element operates a 0773-A31699TWF; P93117 Wayne 14 , 1301667 • After a long period of time, the above-mentioned internal compensation mechanism can be used to improve the brightness uniformity of the organic light-emitting unit. 4 is a diagram showing that the pixel unit of FIG. 2 or FIG. 3L can be incorporated into a display panel (here, indicated by the display panel 30), and it can be an OLED panel, and the panel can be of various types. One portion of the electronic component (here, labeled with electronic component 50). In general, the electronic component includes an OLED panel and an input unit, and moreover, the input unit is operatively coupled to the OLED panel and provides an input signal (e.g., 昼 φ) to the panel to produce an image. The electronic component can be, for example, a cell phone, a digital camera, a personal digital asistant (PDA), a notebook computer, a desktop computer, a television, a car display, or an audio/video player. While the present invention has been described in its preferred embodiments, the present invention is not intended to limit the invention, and the present invention may be modified and modified without departing from the spirit and scope of the invention. The scope of protection is subject to the definition of the scope of the patent application. [Simple description of the drawing] Fig. 1 reveals that there is a problem in that the organic electroluminescent display panel has poor uniformity between the elements. Fig. 2 is a circuit diagram showing an organic electroluminescent display having a compensating element according to an embodiment of the present invention. 3A to 3L are cross-sectional views showing a process intermediate for forming a sensing element compensation organic light emitting element according to an embodiment of the present invention. 0773-A31699TWF; P93117; Wayne 15 1301667 * • Fig. 4 is a schematic view showing an electronic component according to an embodiment of the present invention. 3 0~ display panel, 102~ switch transistor; 106~organic electroluminescent element; [main component symbol description] 20~ halogen element; 50~ electronic component; 104~ drive transistor, 202~ organic electroluminescent Display unit; 204~ drive element; 206~ switch element; 210~ light sensor; 3 04~ control area, 3 0 8~capacitor area, 312~first active layer; 3 16~ light sensing active layer; ~ photoresist layer; 322 ~ channel area; 330 ~ photoresist 208 ~ capacitor; 302 ~ substrate; 306 ~ sensing area, 310 ~ buffer layer; 314 ~ second active layer; 318 ~ lower electrode; 3 21 ~ N + ion; 324~ channel; 3 3 4~ no pole 338~ drain 341~ channel 3 4 3~ source 3 4 5~ no pole; 3 3 2~ source; 3 3 6~ source; 340~ gate Electrode layer; 342~N type transistor gate; 344~P type transistor gate; 346~upper electrode; 348~light sensing lightly doped mask layer; 0773-A31699TWF; P93117; Wayne 16 1301667 3 5 0 ~ lightly doped source / no-pole region; 352 ~ lightly doped source / no-pole region; 354 ~ dielectric layer; 358 ~ first protective layer; Contact; 366 ~ halogen electrode layer; 370 ~ organic light-emitting layer; 3 5 6 ~ light sensing gate 360 ~ opening; 364 ~ second protective layer 368 ~ pixel definition layer 372 ~ cathode.
0773-A31699TWF;P93117;Wayne 170773-A31699TWF; P93117; Wayne 17