TWI397955B - The cutting device of the workpiece - Google Patents
The cutting device of the workpiece Download PDFInfo
- Publication number
- TWI397955B TWI397955B TW095131778A TW95131778A TWI397955B TW I397955 B TWI397955 B TW I397955B TW 095131778 A TW095131778 A TW 095131778A TW 95131778 A TW95131778 A TW 95131778A TW I397955 B TWI397955 B TW I397955B
- Authority
- TW
- Taiwan
- Prior art keywords
- cutting
- workpiece
- liquid
- semiconductor wafer
- cutting fluid
- Prior art date
Links
- 238000005520 cutting process Methods 0.000 title claims description 71
- 239000007788 liquid Substances 0.000 claims description 107
- 239000002173 cutting fluid Substances 0.000 claims description 59
- 238000002347 injection Methods 0.000 claims description 15
- 239000007924 injection Substances 0.000 claims description 15
- 238000007599 discharging Methods 0.000 claims description 2
- 235000012431 wafers Nutrition 0.000 description 68
- 239000004065 semiconductor Substances 0.000 description 67
- 238000011084 recovery Methods 0.000 description 8
- 230000002093 peripheral effect Effects 0.000 description 5
- 238000003754 machining Methods 0.000 description 4
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 4
- 239000004575 stone Substances 0.000 description 3
- 229910003460 diamond Inorganic materials 0.000 description 2
- 239000010432 diamond Substances 0.000 description 2
- 238000003384 imaging method Methods 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- 239000003082 abrasive agent Substances 0.000 description 1
- 239000006061 abrasive grain Substances 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 230000008878 coupling Effects 0.000 description 1
- 238000010168 coupling process Methods 0.000 description 1
- 238000005859 coupling reaction Methods 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000007667 floating Methods 0.000 description 1
- 239000012634 fragment Substances 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 239000011159 matrix material Substances 0.000 description 1
- 230000000149 penetrating effect Effects 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
- 230000000630 rising effect Effects 0.000 description 1
Classifications
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/10—Greenhouse gas [GHG] capture, material saving, heat recovery or other energy efficient measures, e.g. motor control, characterised by manufacturing processes, e.g. for rolling metal or metal working
Landscapes
- Dicing (AREA)
- Crushing And Pulverization Processes (AREA)
Description
本發明是關於被加工物的切削裝置,尤其是防止切割半導體晶圓而切屑附著於晶片化的半導體晶片的表面的半導體晶圓的切削裝置。The present invention relates to a cutting apparatus for a workpiece, and more particularly to a cutting apparatus for preventing a semiconductor wafer from being diced and a chip adhered to a surface of a wafer-formed semiconductor wafer.
一般擬製造半導體晶片藉由格子狀地排列於半導體晶圓的表面的界道(street)劃定複數個矩形領域,而在各該矩形領域形成半導體電路。又,利用沿著界道進行切斷半導體晶圓而分別切斷矩形領域來製造半導體晶片。在上述半導體晶圓的切割,通常,使用被稱為切割機的切斷裝置。該切斷裝置是具有可高速旋轉的主軸,而在該主軸的前端安裝有鑽石的磨粒等所構成的旋轉刀片。Generally, a semiconductor wafer to be manufactured is formed by dividing a plurality of rectangular regions by a grid arranged in a lattice pattern on the surface of the semiconductor wafer, and a semiconductor circuit is formed in each of the rectangular regions. Further, the semiconductor wafer is manufactured by cutting the semiconductor wafer along the boundary and cutting the rectangular regions. In the cutting of the above semiconductor wafer, generally, a cutting device called a cutter is used. The cutting device has a main shaft that can rotate at a high speed, and a rotating blade made of abrasive grains of diamond or the like is attached to the tip end of the main shaft.
然而,在此種切斷裝置中,高速旋轉刀片來切斷加工半導體晶圓之際。在旋轉刀片與半導體晶圓之間產生摩擦熱,導致旋轉刀片的磨耗或破損,而且也成為發生半導體晶圓的切削溝的小碎片等的主要原因。為了防止此,通常,在旋轉刀片的加工領域進行供給切削液使之冷卻。However, in such a cutting device, the blade is cut at a high speed to cut the semiconductor wafer. Frictional heat is generated between the rotating blade and the semiconductor wafer, causing wear or breakage of the rotating blade, and also causes a small chip or the like in the cutting groove of the semiconductor wafer. In order to prevent this, in general, the cutting fluid is supplied and cooled in the processing field of the rotary blade.
作為該切削液的供給方法,沿著加工領域附近的旋轉刀片的兩側面配設一對切削液供給噴嘴管,而在旋轉刀片側方進行噴射切削液。又,從相對位置於旋轉刀片的外周的外周噴嘴也可將切削液噴射在旋轉刀片的外周。被噴射在加工領域的切削液,是與藉由切削加工所產生的切削一起朝旋轉刀片的旋轉方向飛散之故,因而會有切削附著於半導體晶圓的表面的問題。該切屑是從半導體晶圓的表面不容易剝離,又在切削加工後的主軸洗淨工程中,也有不容易剝離該附著的切屑的問題。As a method of supplying the cutting fluid, a pair of cutting fluid supply nozzle tubes are disposed along both side surfaces of the rotary blades in the vicinity of the machining area, and the cutting fluid is sprayed on the side of the rotary blades. Further, the cutting fluid can be ejected onto the outer circumference of the rotary blade from the outer peripheral nozzle of the outer periphery of the rotary blade. The cutting fluid sprayed in the machining field is scattered in the rotation direction of the rotary blade together with the cutting by the cutting process, and thus there is a problem that the cutting adheres to the surface of the semiconductor wafer. The chip is not easily peeled off from the surface of the semiconductor wafer, and in the spindle cleaning process after the cutting process, there is a problem that the adhered chips are not easily peeled off.
為了解決此種問題,眾知往常是藉由旋轉刀片的旋轉有切削液飛散的一邊,設置從半導體晶圓的表面分離包含切屑的切削液所用的排液引導構件,以防止切屑附著於被加工物的表面的技術。(參照日本國特開平4-74607號及特開平7-115075號特許公報)In order to solve such a problem, it is known that a liquid discharge guiding member for separating a cutting fluid containing chips from a surface of a semiconductor wafer is provided by a side in which a cutting fluid is scattered by rotation of a rotary blade, so as to prevent chips from being attached to the processed portion. The technology of the surface of the object. (Refer to Japanese Patent Laid-Open No. 4-74607 and Japanese Patent Laid-Open No. 7-115075)
然而,在半導體晶圓的表面形成有CCD或C-MOS等的攝影元件或其他電路面之故,因而在半導體晶圓的表面會接觸排液引導構件而傷及電路面的情形。However, since an imaging element such as a CCD or a C-MOS or another circuit surface is formed on the surface of the semiconductor wafer, the liquid discharge guiding member is brought into contact with the surface of the semiconductor wafer to damage the circuit surface.
如此,本發明的目的是在於提供在被加工物的切削加工中確實地可防止切屑附著於被加工物的表面的被加工物的切削裝置。In view of the above, it is an object of the present invention to provide a cutting device that can reliably prevent a chip from adhering to a workpiece on a surface of a workpiece during cutting of a workpiece.
為了達成上述目的,本發明是一種被加工物的切削裝置,屬於在切削被加工物的旋轉刀片的切屑飛散的一側設置固定的支撐體,而且設置將切削液供給於上述旋轉刀片的切削液供給管的被加工物的切削裝置,其特徵為:在上述支撐體下面與須切削加工的被加工物的上面之間設置供給用以形成液膜的液體的液體噴射手段。In order to achieve the above object, the present invention provides a cutting apparatus for a workpiece, which is provided with a fixed support body on a side where the chips of the rotating blade of the workpiece are scattered, and a cutting fluid for supplying the cutting fluid to the rotary blade. A cutting device for a workpiece of a supply pipe, characterized in that a liquid ejecting means for supplying a liquid for forming a liquid film is provided between the lower surface of the support and the upper surface of the workpiece to be cut.
上述液體噴射手段是設在上述支撐體的內部較佳。It is preferable that the liquid ejecting means is provided inside the support body.
又,上述液體噴射手段是藉由對於被加工物的上面以所定角度傾斜的噴射噴嘴孔所構成,而該噴射噴嘴孔的噴射口開設於上述支撐體的底面。Further, the liquid ejecting means is constituted by an injection nozzle hole that is inclined at a predetermined angle with respect to the upper surface of the workpiece, and the injection port of the injection nozzle hole is opened on the bottom surface of the support.
又,上述噴射噴嘴孔的孔軸是對於須切削加工的被加工物的上面傾斜大約45度的傾斜較佳。Further, the hole axis of the injection nozzle hole is preferably inclined at an angle of about 45 degrees with respect to the upper surface of the workpiece to be cut.
又,上述噴射噴嘴孔的噴射口,是構成作為對於被加工物的移送方向正交的矩形狀開縫孔較佳。Further, it is preferable that the injection port of the injection nozzle hole is formed as a rectangular slit hole that is orthogonal to the direction in which the workpiece is transferred.
依照本發明,在固定的支撐體的底面與被加工物的表面之間隙充滿著液體而形成液體的膜之故,因而可防止包含切削的排液侵入到該間隙的情形。藉由此,確實防止切屑附著於被加工物的表面而可防止產品的品質。According to the present invention, a liquid is formed by filling a liquid in a gap between the bottom surface of the fixed support and the surface of the workpiece, so that the liquid containing the cutting liquid can be prevented from entering the gap. Thereby, it is possible to prevent the adhesion of the chips to the surface of the workpiece and prevent the quality of the product.
以下,參照圖式說明本發明所致的被加工物的切削裝置。該實施例是針對於作為被加工物適用於半導體晶圓的例子加以說明。Hereinafter, a cutting device for a workpiece according to the present invention will be described with reference to the drawings. This embodiment is described as an example in which it is applied to a semiconductor wafer as a workpiece.
第1圖是表示切割半導體晶圓的切割裝置10的整體構成。在圖中,半導體晶圓12是在其表面形成有CCD或C-MOS等的攝影元件等的半導體電路,經由晶圓膠帶13被保持在框架14上。半導體晶圓12是在該設定狀態下被載在吸盤台15上。吸盤台15是大約平坦的圓盤狀台,在其上面具備真空吸盤,真空吸附保持被載置在該真空吸盤上的半導體晶圓12。Fig. 1 is a view showing the overall configuration of a dicing apparatus 10 for dicing a semiconductor wafer. In the drawing, the semiconductor wafer 12 is a semiconductor circuit in which an imaging element such as a CCD or a C-MOS is formed on the surface thereof, and is held on the frame 14 via the wafer tape 13. The semiconductor wafer 12 is placed on the chuck table 15 in this set state. The chuck table 15 is an approximately flat disk-shaped stage on which a vacuum chuck is provided, and the semiconductor wafer 12 placed on the vacuum chuck is vacuum-sucked.
又,切斷裝置10是具備:用以切斷加工半導體晶圓12的切削手段的切削單元20與吸盤台移動機構。Moreover, the cutting device 10 is provided with the cutting unit 20 and the chuck moving mechanism for cutting the cutting means for processing the semiconductor wafer 12.
切削單元20是具有高速旋轉主軸,在其前端部裝設有旋轉刀片22。切削單元移動機構是朝主軸的軸方向(Y軸方向)移動切削單元20。如此地利用朝Y軸方向移動切削單元20,可將旋轉刀片22的刀尖對位於半導體晶圓12上的切削位置。又,該切削單元移動機構,是朝垂直方向(Z軸方向)移動切削單元20,藉由此可調整對於半導體晶圓12的旋轉刀片22的刻入深度。The cutting unit 20 has a high-speed rotating main shaft, and a rotary blade 22 is attached to the front end portion thereof. The cutting unit moving mechanism moves the cutting unit 20 in the axial direction (Y-axis direction) of the main shaft. By moving the cutting unit 20 in the Y-axis direction in this manner, the tip of the rotary blade 22 can be positioned at the cutting position on the semiconductor wafer 12. Further, the cutting unit moving mechanism moves the cutting unit 20 in the vertical direction (Z-axis direction), whereby the depth of engraving of the rotary blade 22 of the semiconductor wafer 12 can be adjusted.
另一方面,吸盤台移動機構,是半導體晶圓的切削加工時,用以朝旋轉刀片22(X軸方向)往復移動保持半導體晶圓12的吸盤台15者。On the other hand, the chuck moving mechanism is a chuck table 15 for reciprocatingly moving the semiconductor wafer 12 toward the rotary blade 22 (X-axis direction) during the cutting of the semiconductor wafer.
依照如此地所構成的切割裝置10,沿著格子狀地被劃成於半導體晶圓12表面的複數界道來移動旋轉刀片22,藉由此進行切斷加工半導體晶圓,而可將半導體晶圓12切斷加工成複數個晶片。According to the dicing apparatus 10 configured as described above, the rotary blade 22 is moved along a plurality of boundaries which are formed in a lattice shape on the surface of the semiconductor wafer 12, whereby the semiconductor wafer is cut and processed, and the semiconductor crystal can be cut. The circle 12 is cut into a plurality of wafers.
又,切割裝置10是具備用以將切削液供給於旋轉刀片22的加工領域的一對切削液供給噴嘴管26。又,切斷裝置10是具備:配置成覆蓋旋轉刀片22的外周的刀片蓋28,及安裝於該刀片蓋28,而支撐切削液供給噴嘴管26的支撐體40,及被連結於該支撐體40的排出導路50與被連結於該排出導路50的排出導管52。Further, the cutting device 10 is provided with a pair of cutting fluid supply nozzle tubes 26 for supplying the cutting fluid to the machining field of the rotary blade 22. Further, the cutting device 10 includes a blade cover 28 that is disposed to cover the outer circumference of the rotary blade 22, and a support body 40 that is attached to the blade cover 28 and supports the cutting fluid supply nozzle tube 26, and is coupled to the support body. The discharge guide 50 of 40 and the discharge duct 52 connected to the discharge guide 50.
上述旋轉刀片22是如以黏合劑材結合鑽石等研磨粒所形成的極薄的切斷研磨石所構成,藉由未圖示的固定手段(螺栓或螺帽等),被裝設在主軸24的前端部。在本實施形態中,該旋轉刀片22是由配設在刀片外周部的環形狀切削磨石部,及支撐該切削磨石部的基台一體所構成的轂狀磨石刀片所構成。但是,本發明是並不被限定於此種實施例,作為旋轉刀片,使用環狀切削磨石的所謂墊圈刀片,藉由以凸緣其兩側也可軸裝於主軸24。The rotary blade 22 is formed by bonding an extremely thin cutting stone formed of a polishing material such as a diamond to an abrasive material, and is attached to the spindle 24 by a fixing means (such as a bolt or a nut) (not shown). Front end. In the present embodiment, the rotary blade 22 is constituted by a ring-shaped grinding stone portion that is disposed on the outer peripheral portion of the blade and a hub-shaped grinding blade that is integrally formed by the base that supports the cutting stone portion. However, the present invention is not limited to such an embodiment, and a so-called washer blade that uses a ring-shaped cutting grindstone as a rotary blade can be attached to the main shaft 24 by both sides of the flange.
上述切削液供給噴嘴管26是由第2圖及第3圖可明瞭,鄰接於旋轉刀片22下部而約水平地配設的一對直線狀噴嘴管。如第3圖所示地,該切削液供給噴嘴管26,是隔著旋轉刀片22地相對配置於旋轉刀片22的兩側。各切削液供給噴嘴管26是具備複數噴射口(未圖示)於與旋轉刀片22相對的一側之面,而由該噴射口朝旋轉刀片22下部及加工領域噴射切削液(例如水)。如此地,藉由在旋轉刀片22兩側配設一對切削液供給噴嘴管26來供給切削液,俾冷卻切削加工時的旋轉刀片22及加工領域,可防止半導體晶圓12的小碎片發生與旋轉刀片22的被損。The cutting fluid supply nozzle pipe 26 is a pair of linear nozzle tubes disposed approximately horizontally adjacent to the lower portion of the rotary blade 22, as will be apparent from FIGS. 2 and 3. As shown in FIG. 3, the cutting fluid supply nozzle pipe 26 is disposed on both sides of the rotary blade 22 with the rotary blade 22 interposed therebetween. Each of the cutting fluid supply nozzle tubes 26 is provided with a plurality of injection ports (not shown) on a side facing the rotary blade 22, and the cutting fluid is sprayed with a cutting fluid (for example, water) toward the lower portion of the rotary blade 22 and the machining area. In this manner, by supplying a pair of cutting fluid supply nozzle tubes 26 on both sides of the rotary blade 22 to supply the cutting fluid, and cooling the rotary blade 22 and the processing field during the cutting process, small fragments of the semiconductor wafer 12 can be prevented from occurring. The rotating blade 22 is damaged.
又,在第2圖中,在旋轉刀片22的上方設置有刀片蓋28。該刀片蓋28配設成覆蓋旋轉刀片22的外周,而被固定在主軸殼29的前端部。該刀片蓋28是保護旋轉刀片22,而且防止隨著切削加工的切削液或切削屑或是破損的旋轉刀片22的破片等朝外部飛散的情形。在該刀片蓋28固定有支撐體40。該支撐體40是起因於旋轉刀片22的旋轉而會使切削液飛散。亦即,在第2圖中,配置在旋轉刀片22的左邊。Further, in Fig. 2, a blade cover 28 is provided above the rotary blade 22. The blade cover 28 is disposed to cover the outer circumference of the rotary blade 22, and is fixed to the front end portion of the spindle housing 29. The blade cover 28 protects the rotary blade 22 and prevents scattering of the cutting fluid or chips or the broken pieces of the broken rotary blade 22 which are scraped toward the outside. A support body 40 is fixed to the blade cover 28. The support body 40 is caused by the rotation of the rotary blade 22 to cause the cutting fluid to scatter. That is, in the second drawing, it is disposed on the left side of the rotary blade 22.
又,在上述支撐體40的上部,設有與未圖示的切削液供給源(例如工廠設備的自來水設備等)連接的兩個切削液供給口38。又,在支撐體40的內部,形成有分別連通該兩個切削液供給口38與上述一對切削液供給噴嘴管26的如L形切削液供給路30。由各切削液供給口38所流入的切削液,是流經各切削液供給路30而被供給到各切削液供給噴嘴管26,由各切削液供給噴嘴管26的噴射口朝旋轉刀片22被噴射。Further, on the upper portion of the support body 40, two cutting fluid supply ports 38 connected to a cutting fluid supply source (for example, a water supply facility of a factory equipment) (not shown) are provided. Further, inside the support body 40, an L-shaped cutting fluid supply path 30 that communicates between the two cutting fluid supply ports 38 and the pair of cutting fluid supply nozzle tubes 26 is formed. The cutting fluid that has flowed in from each of the cutting fluid supply ports 38 is supplied to each of the cutting fluid supply nozzle tubes 26 through the respective cutting fluid supply passages 30, and is supplied to the rotary blades 22 by the injection ports of the respective cutting fluid supply nozzle tubes 26. injection.
如第3圖及第4圖所示地,在支撐體40的內部,形成有朝X軸方向貫通的排液排出口60。該排液排出口60是被形成於藉由旋轉刀片22的旋轉會使切削液飛散之一邊。又,排液D是利用旋轉刀片22所致的半導體晶圓12的切削加工所產生的切屑混入在切削液中的液體。上述排液排出口60的旋轉刀片22之一側成為排液口的入口。另一方,與排液排出口60的旋轉刀片22相反側成為排液D的出口,而與排出導路50相連通。又,在該排出導路50的出口側連接有排出導路52。As shown in FIG. 3 and FIG. 4, a drain discharge port 60 penetrating in the X-axis direction is formed inside the support body 40. The liquid discharge port 60 is formed by one side of the cutting fluid being scattered by the rotation of the rotary blade 22. Further, the drain D is a liquid in which the chips generated by the cutting process of the semiconductor wafer 12 by the rotary blade 22 are mixed in the cutting fluid. One side of the rotary blade 22 of the above-described liquid discharge port 60 serves as an inlet of the liquid discharge port. On the other hand, the side opposite to the rotary blade 22 of the liquid discharge port 60 serves as an outlet of the drain D, and communicates with the discharge guide 50. Further, a discharge guide 52 is connected to the outlet side of the discharge guide 50.
上述排液排出口60的下面是成為排液導面62,而排液排出口60的旋轉刀片22側的下端部是成為排液回收導入部64。The lower surface of the liquid discharge port 60 is the liquid discharge guide surface 62, and the lower end portion of the liquid discharge port 60 on the side of the rotary blade 22 serves as the liquid discharge recovery introduction portion 64.
上述排液導面62是藉由朝旋轉刀片22下降地傾斜的傾斜導面所形成。該排液導面62是順利地進行排液D的排出而將排液D引導至排出導管50內。又,排液回收導入部64是配置於上述排液導面62的旋轉刀片22側的前端的斷面呈銳角狀狀的部分。該排液回收導入部64,是在起因於旋轉刀片22的旋轉使得排液D飛散之一側,鄰接位於於旋轉刀片22及半導體晶圓12。上述排液回收導入部64,是撈起所存在於旋轉刀片22所致的加工領域近旁的半導體晶圓12的表面12a上的排液D引導至排液導面62。The liquid discharge guide surface 62 is formed by an inclined guide surface that is inclined downward toward the rotary blade 22. The drain guide surface 62 smoothly discharges the drain D and guides the drain D into the discharge duct 50. Further, the liquid discharge recovery introduction portion 64 is a portion having a sharply-shaped cross section disposed at the tip end of the liquid discharge guide surface 62 on the side of the rotary blade 22. The liquid discharge recovery introduction portion 64 is located on one side of the discharge D due to the rotation of the rotary blade 22, and is adjacent to the rotary blade 22 and the semiconductor wafer 12. The liquid discharge recovery introduction unit 64 guides the liquid discharge D on the surface 12a of the semiconductor wafer 12 in the vicinity of the processing area due to the rotary blade 22 to the liquid discharge guide surface 62.
此種排液導面62與排液回收導入部64是功能作為排液引導構件,藉由上述旋轉刀片22的旋轉利用排液飛散的力量,將位於半導體晶圓12的表面上的排液D立即從半導體晶圓12的表面12a予以除去。The liquid discharge guide surface 62 and the liquid discharge recovery introduction portion 64 function as a liquid discharge guiding member, and the liquid discharge D on the surface of the semiconductor wafer 12 is utilized by the rotation of the rotary blade 22 by the force of liquid discharge scattering. Immediately removed from the surface 12a of the semiconductor wafer 12.
上述排出導路50是被安裝於支撐體40的管狀構件。又,排出導管52,是對於該排出部導路50裝卸自如地可連接的管狀構件。如第5圖所示地,該排出導路50及排出導管52,是功能作為從上述排液排出口60所流入的排液D不會接觸到半導體晶圓12地排出到外部的排出路徑。該排出導管52的長度,是切削半導體晶圓12時所排出的排液D不會與半導體晶圓12接觸地被設定成充分長度。The discharge guide 50 is a tubular member that is attached to the support 40. Further, the discharge duct 52 is a tubular member that is detachably connectable to the discharge portion guide 50. As shown in Fig. 5, the discharge guide 50 and the discharge duct 52 function as discharge paths for discharging the liquid discharge D flowing from the liquid discharge port 60 to the outside without coming into contact with the semiconductor wafer 12. The length of the discharge duct 52 is set to a sufficient length so that the discharge D discharged when the semiconductor wafer 12 is cut does not come into contact with the semiconductor wafer 12.
由第2圖可知,支撐體40的底面40a是成為與半導體晶圓12的表面12a大約平行地對面的水平面。所以在支撐體40的底面40a,及半導體晶圓12的表面12a之間,例如存在約2mm的間隙S,兩者是成為接觸狀態。如此地,設置間隙S的理由,是了防止藉由半導體晶圓與支撐體40接觸而會傷及被形成在表面12a的電路面的情形。As can be seen from Fig. 2, the bottom surface 40a of the support 40 is a horizontal plane that faces approximately parallel to the surface 12a of the semiconductor wafer 12. Therefore, for example, a gap S of about 2 mm exists between the bottom surface 40a of the support 40 and the surface 12a of the semiconductor wafer 12, and both of them are in a contact state. As described above, the reason why the gap S is provided is to prevent the semiconductor wafer from coming into contact with the support 40 and to damage the circuit surface formed on the surface 12a.
如第2圖及第6圖所示地,依照本發明,在上述支撐體40的內部設有液體噴射手段,成為藉由該液體噴射手段可將如水的液體噴射到支撐體40的底面40a與半導體晶圓12的表面12a之間的間隙S。被噴射到該間隙S的液體是形成所定壓力的液體膜。該液膜是有效果地阻止包含切屑的排液D侵入到間隙S。As shown in Fig. 2 and Fig. 6, according to the present invention, a liquid ejecting means is provided inside the support body 40, whereby a liquid such as water can be ejected onto the bottom surface 40a of the support body 40 by the liquid ejecting means. A gap S between the surfaces 12a of the semiconductor wafer 12. The liquid that is ejected into the gap S is a liquid film that forms a predetermined pressure. This liquid film effectively prevents the discharge D containing the chips from intruding into the gap S.
由第2圖及第6圖可知,上述液體噴射手段是在支撐體40的內部形成作為噴嘴孔34,而將液體噴射到間隙S內。上述液體噴射手段是具體上,由將液體噴射到上述間隙S的液體噴射口70,及用以將與切削液同一的液體(例如水)供給於該液體噴射口70的液體供給路32及噴嘴孔34。As can be seen from FIGS. 2 and 6, the liquid ejecting means forms a nozzle hole 34 in the inside of the support 40, and ejects the liquid into the gap S. Specifically, the liquid ejecting means is a liquid ejecting port 70 that ejects a liquid into the gap S, and a liquid supply path 32 and a nozzle for supplying a liquid (for example, water) identical to the cutting fluid to the liquid ejecting port 70. Hole 34.
液體噴射嘴的噴射口70,是可作成如直線狀的開縫。這時候,由第3圖可知,直線狀開縫的液體噴射口70是朝上述主軸24的軸向延伸盤地被形成在支撐體40的底面40a。如此地,藉由將液體噴射口70作成直線狀開縫,可將液體朝間隙S的縱深方向均勻地噴射供給,而有效果地可防止排液D侵入到間隙S內。The ejection opening 70 of the liquid ejecting nozzle is a slit which can be formed in a straight line shape. At this time, as is clear from Fig. 3, the liquid ejection opening 70 of the linear slit is formed on the bottom surface 40a of the support body 40 so as to extend in the axial direction of the main shaft 24. In this manner, by forming the liquid ejection opening 70 as a linear slit, the liquid can be uniformly ejected toward the depth direction of the gap S, and the discharge D can be prevented from entering the gap S.
上述液體供給路32是構成作為從將切削液供給於上述切削液供給噴嘴管26的兩個切削液供給路30所分歧的分歧流路。上述噴嘴孔34是連通上述液體供給路32的側面與上述開縫狀液體噴射口70的流路。The liquid supply path 32 is a bifurcation flow path that is branched from the two cutting fluid supply paths 30 that supply the cutting fluid to the cutting fluid supply nozzle pipe 26. The nozzle hole 34 is a flow path that communicates with the side surface of the liquid supply path 32 and the slit-shaped liquid ejection port 70.
如此地,可將與從上述切削液供給噴嘴管26所噴射的切削液同一液體從液體噴射口70噴射到上述間隙S。In this manner, the same liquid as the cutting fluid injected from the cutting fluid supply nozzle tube 26 can be ejected from the liquid ejection port 70 to the gap S.
又,依照較佳實施例,上述噴嘴孔34是對於半導體晶圓12的上面以如45度的角度傾斜。所以,液體噴射口70是成為將液體朝切削刀片22側以下方45度角度噴射到上述間隙S。藉由此,在上述間隙S內充滿液體可形成所定壓力的液體膜W,而可有效果地阻止排液D從上述間隙S的切削刀片22側的端部侵入到間隙S內。Further, in accordance with a preferred embodiment, the nozzle apertures 34 are angled at an angle of, for example, 45 degrees with respect to the upper surface of the semiconductor wafer 12. Therefore, the liquid ejecting port 70 is sprayed to the gap S at an angle of 45 degrees below the cutting insert 22 side. Thereby, the liquid film W of a predetermined pressure can be formed by filling the gap S with the liquid, and the liquid discharge D can be effectively prevented from entering the gap S from the end portion of the gap S on the cutting insert 22 side.
以下,參照第5圖及第6圖詳述旋轉刀片22切削加工半導體晶圓12時所產生的排液D的排出動作。Hereinafter, the discharge operation of the discharge D generated when the rotary blade 22 cuts the semiconductor wafer 12 will be described in detail with reference to FIGS. 5 and 6 .
如第5圖所示地,切削加工時,一面將高速旋轉的旋轉刀片22的刀尖對於半導體晶圓12刻入,一面由上述切削液供給噴嘴管26朝旋轉刀片22的下部變加工領域噴射供給切削液。藉由該切削液,一面旋轉刀片22及加工領域被冷卻,一面藉由旋轉刀片22會使半導體晶圓12被切削而形成切削溝。在加工領域附近,藉由旋轉刀片22所致的半導體晶圓12的切削所產生的切屑混入在從切削液供給噴嘴管26所供給的切削液成為排液D。在該時機,切屑是浮游在排液D中而不會附著於半導體晶圓12的表面12a。As shown in Fig. 5, at the time of cutting, the cutting edge of the rotating blade 22 that rotates at a high speed is injected into the semiconductor wafer 12, and the cutting fluid supply nozzle tube 26 is sprayed toward the lower processing region of the rotary blade 22. Supply cutting fluid. With the cutting fluid, the rotating blade 22 and the processing area are cooled, and the semiconductor wafer 12 is cut by the rotating blade 22 to form a cutting groove. In the vicinity of the processing area, the chips generated by the cutting of the semiconductor wafer 12 by the rotary blade 22 are mixed into the cutting fluid supplied from the cutting fluid supply nozzle pipe 26 to become the discharge D. At this timing, the chips float in the drain D and do not adhere to the surface 12a of the semiconductor wafer 12.
包含此種切屑的排液D,是藉由高速旋轉的旋轉刀片22的旋轉力朝旋轉刀片22的旋轉方向的後方側(第5圖的左側)移動,而欲朝圖的左方飛散。排液D是藉由上述支撐體40的排液回收前端部64,從半導體晶圓12表面12a被撈起而被流進排液排出口60內,又,利用排液引導部62被引導而上昇排液引導部62上(D2),經流進上述排出導路50內後被排出(D3)。The liquid discharge D including such a chip is moved toward the rear side (the left side of FIG. 5) in the rotation direction of the rotary blade 22 by the rotational force of the rotary blade 22 that rotates at a high speed, and is intended to be scattered toward the left side of the figure. The liquid discharge D is picked up from the surface 12a of the semiconductor wafer 12 by the liquid discharge recovery tip end portion 64 of the support body 40, and is introduced into the liquid discharge port 60, and is guided by the liquid discharge guide portion 62. The rising drain guiding portion 62 (D2) flows into the discharge guide 50 and is discharged (D3).
這時候,切削液從上述液體噴射手段的液體噴射口70朝切削刀片22被噴射至支撐體40的底面40a與半導體晶圓12的表面12a的間隙S。藉由此,在旋轉刀片22側的間隙S比液體噴射口70,還充滿所噴射的液體,形成有所定壓力的該液體的液膜W1,會封閉該間隙S。藉由此,藉由上述旋轉刀片22的旋轉力欲飛散的排液D,是不會從排液回收前端部64與半導體晶圓12的表面12a之間侵入到上述間隙S。因此,排液D1的大部分,是浮游在其內部的切屑附著於半導體晶圓12的表面12a之前會從半導體晶圓12的表面12a被分離而流進上述排液排出口60,隨著藉由旋轉刀片22的旋轉所產生的液流而上昇排液引導部62(D2),而被排出到排出導路60內(D3)。At this time, the cutting fluid is ejected from the liquid ejecting port 70 of the liquid ejecting means toward the cutting insert 22 to the gap S between the bottom surface 40a of the support 40 and the surface 12a of the semiconductor wafer 12. Thereby, the gap S on the side of the rotary blade 22 is filled with the liquid to be ejected more than the liquid ejection port 70, and the liquid film W1 of the liquid having a constant pressure is formed, and the gap S is closed. As a result, the liquid discharge D to be scattered by the rotational force of the rotary blade 22 does not enter the gap S from between the liquid discharge collecting tip end portion 64 and the surface 12a of the semiconductor wafer 12. Therefore, most of the liquid discharge D1 is separated from the surface 12a of the semiconductor wafer 12 and flows into the liquid discharge port 60 before the chips floating inside thereof adhere to the surface 12a of the semiconductor wafer 12, with the borrowing The liquid discharge guide 62 (D2) is raised by the liquid flow generated by the rotation of the rotary blade 22, and is discharged into the discharge guide 60 (D3).
又,如上述地封閉間隙S的液體W1,也與上述排液D1一起流進排液排出口60而被排出。又,從上述液體噴射口70所噴射的液體中溢流的一部分,是朝與旋轉刀片22相反側流在半導體晶圓12的表面12a上。Further, the liquid W1 that closes the gap S as described above flows into the liquid discharge port 60 together with the liquid discharge D1 and is discharged. Further, a part of the liquid ejected from the liquid ejecting port 70 overflows on the surface 12a of the semiconductor wafer 12 on the side opposite to the rotating blade 22.
作成如以上,切削附著於半導體晶圓12的表面12a之前,包含切屑的排液D1,是從半導體晶圓12的表面12a被回收,再從排液引導部62通過排出導路50及排出導管52而被排出到外部。這時候,如上述地,排出導管52的長度是比半導體晶圓12還長之故,因而在切削加工中,即使旋轉刀片22移動到半導體晶圓12上的任意位置,從排出導管52所排出排液D也不會接觸到半導體晶圓12。As described above, before the surface 12a of the semiconductor wafer 12 is cut and attached, the liquid discharge D1 containing the chips is recovered from the surface 12a of the semiconductor wafer 12, and then discharged from the liquid discharge guide 62 through the discharge guide 50 and the discharge conduit. 52 is discharged to the outside. At this time, as described above, the length of the discharge duct 52 is longer than that of the semiconductor wafer 12, and therefore, even if the rotary blade 22 is moved to an arbitrary position on the semiconductor wafer 12 during the cutting process, it is discharged from the discharge duct 52. The drain D also does not touch the semiconductor wafer 12.
如第7圖所示地,代管上述排出導管52,也可將以吸引泵等所構成的吸引手段56設置在連接於排出導路50的管狀連結構件54。依照此種構成,藉由吸引手段56可強制地吸引連結構件54內的排液D並加以排出之故,因而即使半導體晶圓12較大時,也可確實地排出排液D。又,更換上述排出導管52與連結構件54而作成可連接於排出構件50,則使用同一支撐體40而可對應於各式各樣大小的半導體晶圓12。As shown in Fig. 7, in place of the discharge duct 52, a suction means 56 constituted by a suction pump or the like may be provided in the tubular coupling member 54 connected to the discharge guide 50. According to this configuration, the liquid discharge D in the connection member 54 can be forcibly sucked and discharged by the suction means 56. Therefore, even when the semiconductor wafer 12 is large, the discharge D can be reliably discharged. Further, when the discharge duct 52 and the connecting member 54 are replaced and connected to the discharge member 50, the same support 40 can be used to correspond to the semiconductor wafers 12 of various sizes.
如此地,依照本發明,將液體噴射在支撐體40的底面40a與半導體晶圓12的表面12a之間的間隙S使之充滿,藉由此,防止包含切屑的排液D侵入到間隙S,而可將排液D的大部分立即引導至排液引導部62而排出。因此,可更確實地防止包含於排液D中的切屑附著於半導體晶圓12的表面12a的情形。As described above, according to the present invention, the liquid is ejected onto the gap S between the bottom surface 40a of the support 40 and the surface 12a of the semiconductor wafer 12 to be filled, whereby the liquid-containing D containing the chips is prevented from intruding into the gap S, On the other hand, most of the drain D can be immediately guided to the drain guiding portion 62 to be discharged. Therefore, it is possible to more reliably prevent the chip contained in the drain D from adhering to the surface 12a of the semiconductor wafer 12.
在上述的實施形態中,作為切削裝置列舉切斷裝置的例子加以說明,惟本發明是並不被限定於此種實施例者,若使用高速旋轉的旋轉刀片而切削加工被加工物的裝置,則也可廣泛地適用對於進行切斷加工裝置以外的切削加工的各種切削裝置。In the above-described embodiment, the cutting device is described as an example of a cutting device. However, the present invention is not limited to such an embodiment, and a device for cutting a workpiece by using a rotating blade that rotates at a high speed is used. Various cutting apparatuses for performing cutting processing other than the cutting apparatus can be widely applied.
又,液體噴射口70的形狀及配置是並不被限定於上述直線狀開縫的例子者,彎曲的開縫,複數開縫,直線狀或矩陣狀等所排列的複數點孔等,若排液無法侵入到上述間隙S者,則可考慮任意形狀及配置。Further, the shape and arrangement of the liquid ejecting port 70 are not limited to the above-described linear slit, and a plurality of dot holes, such as a curved slit, a plurality of slits, a linear shape, or a matrix shape, are arranged. Any shape and arrangement may be considered if the liquid cannot enter the gap S described above.
又,在上述實施形態中,一體地構成支撐體40與液體噴射手段,而在支撐體40內部形液體供給路32及噴嘴孔34,又在其底面設置液體噴射口70,惟本發明是並不被限定於此種實施例者,例如也可以其他體來構成支撐體40與液體噴射手段。如此地,藉由將液體供給於設在支撐體40的外側的液體噴射手段也可期待同樣的效果。Further, in the above-described embodiment, the support body 40 and the liquid ejecting means are integrally formed, and the liquid supply path 32 and the nozzle hole 34 are formed inside the support body 40, and the liquid ejecting port 70 is provided on the bottom surface thereof, but the present invention is It is not limited to such an embodiment, and for example, the support 40 and the liquid ejecting means may be configured by other bodies. As described above, the same effect can be expected by supplying the liquid to the liquid ejecting means provided outside the support 40.
又,在上述實施形態中,作為切削液供給手段例舉從旋轉刀片22的兩側方噴射供給切削液的一對切削液供給噴嘴管26的例子加以說明,惟本發明是並不被限定於此種實施例,例如代替上述切削供給噴嘴管26,在旋轉刀片22的旋轉方向的前方側設置外周噴嘴成為與旋轉刀片22的外周面相對的狀態,而從該外周噴嘴朝旋轉刀片22的外周面噴射供給切削液也可以。Further, in the above-described embodiment, an example in which a pair of cutting fluid supply nozzle tubes 26 for supplying cutting fluid are ejected from both sides of the rotary blade 22 as the cutting fluid supply means will be described, but the present invention is not limited thereto. In such an embodiment, for example, instead of the above-described cutting supply nozzle tube 26, the outer peripheral nozzle is provided on the front side in the rotational direction of the rotary blade 22 so as to face the outer peripheral surface of the rotary blade 22, and the outer peripheral nozzle is directed toward the outer periphery of the rotary blade 22. It is also possible to supply the cutting fluid by surface jet.
本發明是可適用於半導體晶圓用的切割裝置等,尤其是對於須防止切屑附著於半導體晶圓的表面的切削裝置也可適用。The present invention is applicable to a dicing apparatus or the like for a semiconductor wafer, and is particularly applicable to a cutting apparatus that is required to prevent chips from adhering to the surface of a semiconductor wafer.
10...切割裝置10. . . Cutting device
12...半導體晶圓12. . . Semiconductor wafer
13...晶圓膠帶13. . . Wafer tape
14...框架14. . . frame
15...吸盤台15. . . Suction table
20...切削晶圓20. . . Cutting wafer
22...旋轉刀片twenty two. . . Rotating blade
24...主軸twenty four. . . Spindle
26...切削液供給噴嘴管26. . . Cutting fluid supply nozzle tube
28...刀片蓋28. . . Blade cover
29...主軸殼29. . . Spindle shell
30...切削液供給路30. . . Cutting fluid supply path
34...噴嘴孔34. . . Nozzle hole
38...切削液供給口38. . . Cutting fluid supply port
40...支撐體40. . . Support
50...排出導路50. . . Exhaust guide
52...排出導管52. . . Discharge conduit
54...連結構件54. . . Connecting member
56...吸引手段56. . . Attraction
60...排液排出口60. . . Drain discharge
62...排液導面62. . . Drainage guide
64...排液回收導入部64. . . Drainage recovery introduction
70...液體噴射口70. . . Liquid injection port
D...排液D. . . Drainage
S...間隙S. . . gap
第1圖是表示整體切割裝置的立體圖。Fig. 1 is a perspective view showing the entire cutting device.
第2圖是表示依本發明的切斷裝置的側視圖。Fig. 2 is a side view showing the cutting device according to the present invention.
第3圖是表示同裝置的仰視圖。Figure 3 is a bottom view showing the same device.
第4圖是表示沿著第2圖的A.A線切剖的橫剖視圖。Figure 4 is a view along A of Figure 2. A cross-sectional view of the A line cut.
第5圖是表示包含切斷時的切屑的排液的排出狀態的側視圖。Fig. 5 is a side view showing a discharge state of the liquid discharge including the chips at the time of cutting.
第6圖是擴大表示本發明的主要部分的側斷面圖。Fig. 6 is a side sectional view showing an enlarged main part of the present invention.
第7圖是表示包含切斷時的切屑的排液的流動狀態的側視圖。Fig. 7 is a side view showing a flow state of the liquid discharge including the chips at the time of cutting.
第8圖是表示排液的流動狀態的側視圖。Fig. 8 is a side view showing the flow state of the liquid discharge.
22...旋轉刀片twenty two. . . Rotating blade
26...切削液供給噴嘴管26. . . Cutting fluid supply nozzle tube
30...切削液供給路30. . . Cutting fluid supply path
40...支撐體40. . . Support
60...排液排出口60. . . Drain discharge
62...排液導面62. . . Drainage guide
64...排液回收導入部64. . . Drainage recovery introduction
Claims (5)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2005256747A JP4880267B2 (en) | 2005-09-05 | 2005-09-05 | Cutting equipment |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| TW200715392A TW200715392A (en) | 2007-04-16 |
| TWI397955B true TWI397955B (en) | 2013-06-01 |
Family
ID=37931186
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW095131778A TWI397955B (en) | 2005-09-05 | 2006-08-29 | The cutting device of the workpiece |
Country Status (2)
| Country | Link |
|---|---|
| JP (1) | JP4880267B2 (en) |
| TW (1) | TWI397955B (en) |
Families Citing this family (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP5446027B2 (en) * | 2007-09-25 | 2014-03-19 | 株式会社東京精密 | Dicing machine |
| JP5458460B2 (en) * | 2008-09-08 | 2014-04-02 | 株式会社東京精密 | Cutting apparatus and cutting method |
| JP5422176B2 (en) * | 2008-11-06 | 2014-02-19 | 株式会社ディスコ | Holding table and cutting device |
| JP2011016170A (en) * | 2009-07-07 | 2011-01-27 | Disco Abrasive Syst Ltd | Cutting device |
| JP5511325B2 (en) * | 2009-11-18 | 2014-06-04 | 株式会社ディスコ | Cutting equipment |
| JP6227985B2 (en) * | 2013-11-28 | 2017-11-08 | 株式会社ディスコ | Cutting equipment |
| CN108312369B (en) * | 2018-03-28 | 2024-05-07 | 深圳赛意法微电子有限公司 | Wafer cutting equipment and wafer cutting method |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS621911U (en) * | 1985-06-21 | 1987-01-08 | ||
| JPH01209104A (en) * | 1988-02-17 | 1989-08-22 | Disco Abrasive Syst Ltd | Processing equipment |
| JPH0817765A (en) * | 1994-07-01 | 1996-01-19 | Sony Corp | Dicing equipment for semiconductor wafers |
| JP2003142431A (en) * | 2001-11-02 | 2003-05-16 | Disco Abrasive Syst Ltd | Cutting water nozzle |
Family Cites Families (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS58163615A (en) * | 1982-03-24 | 1983-09-28 | 富士通株式会社 | Method of cutting wafer |
| JPS621911A (en) * | 1985-06-26 | 1987-01-07 | 石川島播磨重工業株式会社 | Work vehicle for repairing bridges, etc. and its construction method |
| JPS6480506A (en) * | 1987-09-24 | 1989-03-27 | Hitachi Ltd | Dicer |
| JPH07115075A (en) * | 1993-10-18 | 1995-05-02 | Sony Corp | Wafer dicing equipment |
-
2005
- 2005-09-05 JP JP2005256747A patent/JP4880267B2/en not_active Expired - Lifetime
-
2006
- 2006-08-29 TW TW095131778A patent/TWI397955B/en active
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS621911U (en) * | 1985-06-21 | 1987-01-08 | ||
| JPH01209104A (en) * | 1988-02-17 | 1989-08-22 | Disco Abrasive Syst Ltd | Processing equipment |
| JPH0817765A (en) * | 1994-07-01 | 1996-01-19 | Sony Corp | Dicing equipment for semiconductor wafers |
| JP2003142431A (en) * | 2001-11-02 | 2003-05-16 | Disco Abrasive Syst Ltd | Cutting water nozzle |
Also Published As
| Publication number | Publication date |
|---|---|
| TW200715392A (en) | 2007-04-16 |
| JP2007069280A (en) | 2007-03-22 |
| JP4880267B2 (en) | 2012-02-22 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| KR102210285B1 (en) | Cutting apparatus | |
| JP5885083B2 (en) | Dicing machine | |
| JP4943688B2 (en) | Cutting equipment | |
| CN101992505B (en) | Cutting device | |
| JP6014443B2 (en) | Plate edge grinding machine | |
| JP2019055446A (en) | Cutting blade mounting mechanism | |
| CN101992504A (en) | Cutting device | |
| CN107452606A (en) | Topping machanism | |
| TWI397955B (en) | The cutting device of the workpiece | |
| JP2007216377A (en) | Dicing device and dicing method | |
| WO2008004365A1 (en) | Dicing apparatus and dicing method | |
| JP2011110631A (en) | Cutting device | |
| JP5106997B2 (en) | Cutting equipment | |
| TW201726324A (en) | Blade cover in which pressurized air is mixed with cutting water to form a mixed fluid that is jetted from a pressurized air injection port | |
| JP2019181584A (en) | Processing device | |
| JP5843622B2 (en) | Cutting equipment | |
| JP6267977B2 (en) | Cutting method | |
| JP7295653B2 (en) | chuck table | |
| TWI858164B (en) | Cutting device | |
| JP2023101146A (en) | cleaning mechanism | |
| JP2011062778A (en) | Cutting device | |
| JP2021003740A (en) | Work-piece grinding method and grinding device | |
| JP4880244B2 (en) | Cutting equipment | |
| JP4909575B2 (en) | Cleaning method and cleaning equipment | |
| JP7158813B2 (en) | grinding wheel |