TWI393693B - A low-fire dielectric composition - Google Patents
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- 239000000203 mixture Substances 0.000 title claims description 64
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 claims description 35
- 238000005245 sintering Methods 0.000 claims description 34
- QPLDLSVMHZLSFG-UHFFFAOYSA-N Copper oxide Chemical compound [Cu]=O QPLDLSVMHZLSFG-UHFFFAOYSA-N 0.000 claims description 14
- 239000005751 Copper oxide Substances 0.000 claims description 14
- 229910000431 copper oxide Inorganic materials 0.000 claims description 14
- 229940093474 manganese carbonate Drugs 0.000 claims description 14
- 235000006748 manganese carbonate Nutrition 0.000 claims description 14
- 239000011656 manganese carbonate Substances 0.000 claims description 14
- 229910000016 manganese(II) carbonate Inorganic materials 0.000 claims description 14
- XMWCXZJXESXBBY-UHFFFAOYSA-L manganese(ii) carbonate Chemical compound [Mn+2].[O-]C([O-])=O XMWCXZJXESXBBY-UHFFFAOYSA-L 0.000 claims description 14
- 210000001161 mammalian embryo Anatomy 0.000 claims description 10
- 229910010413 TiO 2 Inorganic materials 0.000 claims description 8
- 239000002002 slurry Substances 0.000 claims description 8
- 239000004408 titanium dioxide Substances 0.000 claims description 8
- 239000011230 binding agent Substances 0.000 claims description 7
- 239000003795 chemical substances by application Substances 0.000 claims description 6
- 238000000280 densification Methods 0.000 claims description 5
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- 239000011268 mixed slurry Substances 0.000 claims description 2
- 239000002994 raw material Substances 0.000 claims 2
- 238000002834 transmittance Methods 0.000 claims 1
- 238000000034 method Methods 0.000 description 16
- 229910010293 ceramic material Inorganic materials 0.000 description 15
- 239000000843 powder Substances 0.000 description 15
- 239000000919 ceramic Substances 0.000 description 14
- 239000004020 conductor Substances 0.000 description 12
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 11
- 229910052709 silver Inorganic materials 0.000 description 11
- 239000004332 silver Substances 0.000 description 11
- 238000002485 combustion reaction Methods 0.000 description 8
- BDERNNFJNOPAEC-UHFFFAOYSA-N propan-1-ol Chemical compound CCCO BDERNNFJNOPAEC-UHFFFAOYSA-N 0.000 description 8
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- 229910004298 SiO 2 Inorganic materials 0.000 description 4
- 238000010344 co-firing Methods 0.000 description 4
- 239000010949 copper Substances 0.000 description 4
- 239000003989 dielectric material Substances 0.000 description 4
- 229910052751 metal Inorganic materials 0.000 description 4
- 239000002184 metal Substances 0.000 description 4
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 3
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 3
- 101100513612 Microdochium nivale MnCO gene Proteins 0.000 description 3
- YXFVVABEGXRONW-UHFFFAOYSA-N Toluene Chemical compound CC1=CC=CC=C1 YXFVVABEGXRONW-UHFFFAOYSA-N 0.000 description 3
- 229910052802 copper Inorganic materials 0.000 description 3
- 238000005238 degreasing Methods 0.000 description 3
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- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 2
- 229910001252 Pd alloy Inorganic materials 0.000 description 2
- 239000004372 Polyvinyl alcohol Substances 0.000 description 2
- MCMNRKCIXSYSNV-UHFFFAOYSA-N ZrO2 Inorganic materials O=[Zr]=O MCMNRKCIXSYSNV-UHFFFAOYSA-N 0.000 description 2
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 2
- 239000000945 filler Substances 0.000 description 2
- RVTZCBVAJQQJTK-UHFFFAOYSA-N oxygen(2-);zirconium(4+) Chemical compound [O-2].[O-2].[Zr+4] RVTZCBVAJQQJTK-UHFFFAOYSA-N 0.000 description 2
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- ZTQSAGDEMFDKMZ-UHFFFAOYSA-N Butyraldehyde Chemical compound CCCC=O ZTQSAGDEMFDKMZ-UHFFFAOYSA-N 0.000 description 1
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- SWELZOZIOHGSPA-UHFFFAOYSA-N palladium silver Chemical compound [Pd].[Ag] SWELZOZIOHGSPA-UHFFFAOYSA-N 0.000 description 1
- -1 polyethylene Polymers 0.000 description 1
- 229920000573 polyethylene Polymers 0.000 description 1
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Description
本發明係關於一種低溫共燒介電組合物,特別係與介電陶瓷材料相關,本發明之介電組合物可在低溫下燒結緻密,因此可與低熔點、高導電性之金屬導體如銀和銅共燒成具有內導體層或帶線型式之介電濾波器產品,並具有高介電常數與低介電損失的特性。The present invention relates to a low temperature co-fired dielectric composition, in particular to a dielectric ceramic material, the dielectric composition of the present invention can be sintered and compacted at a low temperature, and thus can be combined with a low melting point, high conductivity metal conductor such as silver. And copper co-fired into a dielectric filter product having an inner conductor layer or a strip line type, and has characteristics of high dielectric constant and low dielectric loss.
縮小元件尺寸乃當前研發上一個重要的課題,為了因應這個需求,市面上已開發出多層結構的電子元件,以增加體積效率,故濾波器也朝向多層及微小型化發展。然而,在多層濾波器中,必須與低電阻的金屬導體如銀或銅共燒,但是銅導體必須在無氧的氣氛下進行燒結,以避免形成氧化銅,但在無氧的氣氛下,陶瓷粉末內的有機黏結劑移除困難,而使生產成本提高;而銀導體雖可在大氣氣氛下燒結,然而其熔點為攝氏962度(℃),因此陶瓷組件必須在低於銀的熔點以下燒結完成。所以,低溫可燒結緻密之介電材料的開發就變的非常重要了。Reducing the component size is an important issue in current research and development. In order to meet this demand, electronic components of a multi-layer structure have been developed on the market to increase volumetric efficiency, so the filter is also moving toward multilayer and miniaturization. However, in a multilayer filter, it must be co-fired with a low-resistance metal conductor such as silver or copper, but the copper conductor must be sintered in an oxygen-free atmosphere to avoid the formation of copper oxide, but in an oxygen-free atmosphere, the ceramic The removal of the organic binder in the powder is difficult, and the production cost is increased. While the silver conductor can be sintered in the atmosphere, the melting point is 962 degrees Celsius (° C.), so the ceramic component must be sintered below the melting point of the silver. carry out. Therefore, the development of low temperature sinterable dense dielectric materials becomes very important.
為了因應濾波器微小型化的需求,在陶瓷材料的選擇上必須滿足下列特性:(1)具有高介電常數(K),通常K值介於10到100間,主要原因是濾波器尺寸的減少與K1/2 有關,K越高則濾波器的尺寸就越小。(2)具有較小的介電損失(tan δ),介電損失越小,可以得到較高的品質因子,以利共振頻率的選取。In order to meet the needs of miniaturization of filters, the following characteristics must be met in the selection of ceramic materials: (1) have a high dielectric constant (K), usually K values between 10 and 100, the main reason is the size of the filter The reduction is related to K 1/2 , and the higher the K, the smaller the size of the filter. (2) With a small dielectric loss (tan δ), the smaller the dielectric loss, the higher the quality factor can be obtained to facilitate the selection of the resonant frequency.
在不同的介電陶瓷材料中,多種已知可滿足上述需求的陶瓷材料如:TiO2 ,Ba2 Ti9 O20 ,BaTi4 O9 ,ZrO2 -SnO2 -TiO2 ,Ba(Zn1/3 Ta2/3 )O3 ,和(Ba,Pb)Nd2 Ti5 O,然而這些陶瓷材料的燒結溫度都在攝氏1300度(℃)以上,無法與高導電金屬導體如銀等共燒,因此為了降低燒結溫度至攝氏962度(℃)或更低,一般已知的方案有:以化學方法製造微細粉末、於陶瓷材料中加入助燒劑或加入低軟化點的玻璃幫助燒結。添加由碳酸錳及氧化銅所組成的助燒劑到純的二氧化鈦是本實 驗所採用的方法。Among the different dielectric ceramic materials, various ceramic materials known to meet the above requirements are: TiO 2 , Ba 2 Ti 9 O 20 , BaTi 4 O 9 , ZrO 2 -SnO 2 -TiO 2 , Ba(Zn 1/ 3 Ta 2/3 )O 3 , and (Ba,Pb)Nd 2 Ti 5 O, however, these ceramic materials have sintering temperatures above 1300 ° C (° C) and cannot be co-fired with highly conductive metal conductors such as silver. Therefore, in order to lower the sintering temperature to 962 degrees Celsius (° C.) or lower, a generally known solution is to chemically produce a fine powder, add a sintering aid to a ceramic material, or add a glass having a low softening point to assist sintering. The addition of a sintering aid consisting of manganese carbonate and copper oxide to pure titanium dioxide is the method used in this experiment.
在美國專利第5,449,652號內提到的微波介電陶瓷材料是由Bi(2-x) (Zn(2+y)/3 Nb(4/3) )O(7-3x/2+y/3) ,其中0.24<x<0.333,0.120<y<0.3;和Bi(1-x) Ca(x) (Zn(2+y)/3 Nb(4/3) )O(7-3x/2+y/3+xz/-z) ,其中0<x<0.667,0<y<0.30,0<z<0.2所組成。此微波介電陶瓷材料所得到的介電常數為100(@7GHz)、品質因子為7000(@7GHz)及共振頻率溫度係數為10ppm/℃。The microwave dielectric ceramic material mentioned in U.S. Patent No. 5,449,652 is composed of Bi (2-x) (Zn (2+y)/3 Nb (4/3) )O (7-3x/2+y/3) , of which 0.24 <x<0.333, 0.120<y<0.3; and Bi (1-x) Ca (x) (Zn (2+y)/3 Nb (4/3) )O (7-3x/2+y/3+xz/-z) , Where 0<x<0.667, 0<y<0.30, 0<z<0.2. The microwave dielectric ceramic material has a dielectric constant of 100 (@7 GHz), a quality factor of 7000 (@7 GHz), and a resonance frequency temperature coefficient of 10 ppm/°C.
在美國專利第4,672,152號內提到的低介電陶瓷材料是由50至95重量百分比(wt%)的結晶玻璃和50至5重量百分比(wt%)的陶瓷填充劑所組成。所添加的結晶玻璃成分為5至20重量百分比(wt%)Li2 O、60至90重量百分比(wt%)SiO2 和1至10重量百分比(wt%)Al2 O3 。而陶瓷填充劑則由SiO2 和Al2 O3 所組成。此介電材料所得到的介電常數在5.1至6.0之間。The low dielectric ceramic material mentioned in U.S. Patent No. 4,672,152 is composed of 50 to 95 weight percent (wt%) of crystallized glass and 50 to 5 weight percent (wt%) of ceramic filler. The crystallized glass component added is 5 to 20 weight percent (wt%) Li 2 O, 60 to 90 weight percent (wt%) SiO 2 and 1 to 10 weight percent (wt%) Al 2 O 3 . The ceramic filler consists of SiO 2 and Al 2 O 3 . The dielectric material obtained has a dielectric constant between 5.1 and 6.0.
在美國專利第4,755,490號內提到的低介電陶瓷材料是由10至50重量百分比(wt%)Al2 O3 、0至30重量百分比(wt%)fused SiO2 和50至60重量百分比(wt%)玻璃所組成。其中玻璃的成分為4wt% CaO、12重量百分比(wt%)MgO、29重量百分比(wt%)B2 O3 和42重量百分比(wt%)SiO2 。此介電陶瓷材料可在溫度低於攝氏1000度(℃)下燒結,所得到的介電常數為4.5至6.1,線熱膨脹係數為3.9至4.2×10-6 K-1 。The low dielectric ceramic material mentioned in U.S. Patent No. 4,755,490 is from 10 to 50 weight percent (wt%) Al 2 O 3 , 0 to 30 weight percent (wt%) fused SiO 2 and 50 to 60 weight percent ( Wt%) consists of glass. The composition of the glass was 4 wt% CaO, 12 wt% (wt%) MgO, 29 wt% (wt%) B 2 O 3 and 42 wt% (wt%) SiO 2 . The dielectric ceramic material can be sintered at a temperature lower than 1000 degrees Celsius (° C.), and has a dielectric constant of 4.5 to 6.1 and a linear thermal expansion coefficient of 3.9 to 4.2×10 -6 K -1 .
在美國專利第5,415,945號內提到高介電常數的陶瓷材料的成分為75至85莫耳百分比(mol%)Pb(Ni1/3 Nb2/3 )O3 、0至15莫耳百分比(mol%)PbTiO3 、5至16.5莫耳百分比(mol%)Pb(Zn1/2 W1/2 )O3 和Pb(Cu1/3 Nb2/3 )O3 。其燒結溫度為攝氏1000度(℃),所得到的介電常數在1000至4000之間。In U.S. Patent No. 5,415,945, the composition of the high dielectric constant ceramic material is 75 to 85 mole percent (mol%) Pb(Ni 1/3 Nb 2/3 )O 3 , 0 to 15 mole percent ( Mol%) PbTiO 3 , 5 to 16.5 mole percent (mol%) Pb(Zn 1/2 W 1/2 )O 3 and Pb(Cu 1/3 Nb 2/3 )O 3 . The sintering temperature is 1000 degrees Celsius (° C.), and the resulting dielectric constant is between 1000 and 4000.
在美國專利第5,262,368號內提到的高介電陶瓷材料是由BaTiO3 、BaCuO2 、WO3 和MoO3 所組成。其燒結溫度為攝氏1150度(℃),所得到的介電常數為2000至3000(@1KHz),介電損失為2.5至16百分比(%)(@1KHz)。The high dielectric ceramic material mentioned in U.S. Patent No. 5,262,368 is composed of BaTiO 3 , BaCuO 2 , WO 3 and MoO 3 . The sintering temperature is 1150 degrees Celsius (° C.), and the resulting dielectric constant is 2000 to 3000 (@1 KHz), and the dielectric loss is 2.5 to 16% (%) (@1 KHz).
在美國專利第5,461,014號內提到的高介電陶瓷材料是由Pb(Mg1/3 Nb2/3 )O3 和BaCuO2 所組成。其燒結溫度為攝氏1050度(℃),所得到的介電常數為7000 至8000(@1KHz),介電損失低於3百分比(%)。The high dielectric ceramic material mentioned in U.S. Patent No. 5,461,014 is composed of Pb(Mg 1/3 Nb 2/3 )O 3 and BaCuO 2 . The sintering temperature is 1050 degrees Celsius (° C.), and the resulting dielectric constant is 7000 to 8000 (@1 KHz), and the dielectric loss is less than 3 percent (%).
在美國專利第6,309,993號內提到的低溫燒結微波介電材料成分為20至90體積百分比(vol%)硼矽玻璃和80至10體積百分比(vol%)TiO2 。其可在溫度低於攝氏1000度(℃)下燒結,所得到的介電常數為20至45(@7GHz),品質因子為1000至1300(@7GHz)。The low temperature sintered microwave dielectric material composition mentioned in U.S. Patent No. 6,309,993 is 20 to 90 volume percent (vol%) of borosilicate glass and 80 to 10 volume percent (vol%) of TiO 2 . It can be sintered at temperatures below 1000 degrees Celsius (°C), resulting in a dielectric constant of 20 to 45 (@7 GHz) and a quality factor of 1000 to 1300 (@7 GHz).
在美國專利第6,159,883號內提到的低溫燒結介電材料其成分為30至90體積百分比(vol%)Ca-Pb-Al-Zn-B-Si glass和70至10體積百分比(vol%)oxide。其燒結溫度為攝氏800至1000度(℃),所得到的介電常數為6至10,介電損失為0.01百分比(%)至0.05百分比(%)(@1MHz)。The low-temperature sintered dielectric material mentioned in U.S. Patent No. 6,159,883 has a composition of 30 to 90 volume percent (vol%) of Ca-Pb-Al-Zn-B-Si glass and 70 to 10 volume percent (vol%) of oxide. . The sintering temperature is 800 to 1000 degrees Celsius (° C.), the resulting dielectric constant is 6 to 10, and the dielectric loss is 0.01% (%) to 0.05% (%) (@1 MHz).
由上述說明可知,業界仍急需具低燒結溫度與高介電係數及低介電損失的陶瓷材料,本發明即針對此一需求所為之研發。It can be seen from the above description that ceramic materials having low sintering temperature, high dielectric constant and low dielectric loss are still urgently needed in the industry, and the present invention has been developed for this requirement.
本發明其目的在於:提供一種新穎之低溫共燒介電組合物,可於低溫燒結緻密,並且具有高介電常數及低介電損失等特性。SUMMARY OF THE INVENTION The object of the present invention is to provide a novel low temperature co-fired dielectric composition which can be sintered at a low temperature and has high dielectric constant and low dielectric loss.
本發明其目的還在於:此低溫共燒介電組合物的陶瓷組合物,可在低溫燒結緻密,因此可與低熔點、低阻抗之導體相容,經由與低熔點、高導電金屬共燒以及疊壓之過程,提供市場所需之積層型介電陶瓷元件。The object of the present invention is also that the ceramic composition of the low-temperature co-fired dielectric composition can be sintered at a low temperature and is dense, so that it can be compatible with a low melting point, low-impedance conductor, and co-fired with a low melting point and a highly conductive metal. The process of lamination provides the laminated dielectric ceramic components required by the market.
為實現這些本發明的目的及其他特質,本發明提供了一種低溫共燒介電組合物,其在於技術方案是:一種低溫共燒介電組合物,其係含80至96.5重量百分比(wt%)之二氧化鈦(TiO2 ,rutile)和3.5至20重量百分比(wt%)之碳酸錳及氧化銅助燒劑的成份組成,此成份組成可於攝氏875至925度(℃)下獲得相對燒結密度95百分比(%)以上;另,根據該成分組成所製成之生胚,燒結緻密後在1MHz可得到70至101的介電常數和小於0.5百分比(%)的介電損失;又其中所述之助燒劑組成,其係含9至50重量百分比(wt%)碳酸錳和50至91重量百分比(wt%) 氧化銅。In order to achieve the objects and other characteristics of the present invention, the present invention provides a low temperature co-fired dielectric composition in a technical solution: a low temperature co-fired dielectric composition comprising 80 to 96.5 weight percent (wt%) a composition of titanium dioxide (TiO 2 , rutile) and 3.5 to 20 weight percent (wt%) of manganese carbonate and copper oxide sintering agent, the composition of which can obtain a relative sintered density at 875 to 925 degrees Celsius (° C.) 95% or more (%) or more; in addition, according to the composition of the composition of the green embryo, after sintering compaction, a dielectric constant of 70 to 101 and a dielectric loss of less than 0.5% (%) can be obtained at 1 MHz; The composition of the sintering aid comprises 9 to 50 weight percent (wt%) manganese carbonate and 50 to 91 weight percent (wt%) copper oxide.
在本發明的另一個方面,所述之低溫共燒介電組合物,其中進一步用來製作低溫共燒介電組合物元件的漿料,係含70至85重量百分比(wt%)如上所述低溫共燒介電組合物之成份組成,和15至30重量百分比(wt%)之有機載體;其中該有機載體係為有機溶劑、有機黏結劑及有機塑化劑之混合漿料;另,進一步使用此小段所述之漿料,其所製成的生胚,可使生胚在低於攝氏925度(℃)下燒結緻密。In another aspect of the invention, the low temperature co-fired dielectric composition, wherein the slurry further used to form the low temperature co-fired dielectric composition component comprises 70 to 85 weight percent (wt%) as described above a composition of the low-temperature co-fired dielectric composition, and 15 to 30 weight percent (wt%) of the organic vehicle; wherein the organic carrier is a mixed slurry of an organic solvent, an organic binder, and an organic plasticizer; Using the slurry described in this subsection, the resulting embryos can be sintered and densified at less than 925 degrees Celsius (° C.).
以下茲將本發明為達成其發明目的,配合附圖及實施例,作進一步詳細說明如下:The present invention will be further described in detail below with reference to the accompanying drawings and embodiments.
首先,如業界所知,純二氧化鈦(TiO2 )具有很好的微波特性,如高介電常數(~100 @GHz)和高品質因子(~10000 @GHz)等,唯純二氧化鈦的燒結溫度需達攝氏1100度(℃)以上才可燒結緻密。在如此高的燒結溫度和需氧氣氣氛的條件下,使其被製造成積層陶瓷元件時需使用貴重金屬當電極,如銀-鈀合金。First, as is known in the industry, pure titanium dioxide (TiO 2 ) has good microwave characteristics, such as high dielectric constant (~100 @GHz) and high quality factor (~10000 @GHz), etc., only the sintering temperature of pure titanium dioxide needs It can be sintered and densified up to 1100 degrees Celsius (°C). At such a high sintering temperature and an oxygen-requiring atmosphere, it is necessary to use a precious metal as an electrode, such as a silver-palladium alloy, when it is fabricated into a laminated ceramic component.
故而本案發明人發現,在純二氧化鈦(TiO2 )中添加碳酸錳和氧化銅的混合物,可有效的降低燒結溫度至攝氏900度(℃)以下,因而可以使用較便宜的純銀來取代昂貴的銀鈀合金,以降低製造成本。Therefore, the inventors of the present invention have found that the addition of a mixture of manganese carbonate and copper oxide in pure titanium dioxide (TiO 2 ) can effectively lower the sintering temperature to below 900 ° C (° C.), so that cheaper silver can be used instead of expensive silver. Palladium alloy to reduce manufacturing costs.
特定言之,本發明係為一新穎低溫共燒介電組合物,其係依不同比例混合之二氧化鈦(TiO2 ,rutile)加上助燒劑(MnCO3 -CuO,MC)所組成,該陶瓷加上助燒劑所組成之比例並無特別限制,可視所需成品的性質而調整。In particular, the present invention is a novel low-temperature co-fired dielectric composition composed of titanium dioxide (TiO 2 , rutile) mixed with different proportions and a sintering aid (MnCO 3 -CuO, MC). The ratio of the composition of the sintering aid is not particularly limited and can be adjusted depending on the nature of the desired product.
在本發明實施上,較佳的低溫共燒介電組合物,係含80至96.5重量百分比(wt%)之二氧化鈦(TiO2 ,rutile)與20至3.5重量百分比(wt%)之助燒劑(MC);另,所述之助燒劑,其較佳成分之碳酸錳及氧化銅(MnCO3 -CuO)重量比為(1:3)及(1:6)。In the practice of the present invention, a preferred low-temperature co-fired dielectric composition contains 80 to 96.5 weight percent (wt%) of titanium dioxide (TiO 2 , rutile) and 20 to 3.5 weight percent (wt%) of a combustion aid. (MC); In addition, the sintering aid has a preferred composition of manganese carbonate and copper oxide (MnCO 3 -CuO) in a weight ratio of (1:3) and (1:6).
本發明低溫共燒介電組合物,可應用於積層陶瓷元件。於此應用中,需將該低溫共燒介電組合物與有機載體混合形成漿料,其係含70至85重量百分比(wt%)低溫共燒介電組合物和15~30重量百分比(wt%)有機載體;再經刮刀成形程序而得到生胚薄片,其後經網印導體膏、疊壓與共燒等習知技術,製備而得到積層陶瓷元件。其中所述之低溫共燒介電組合物,含有3.5至20重量百分比(wt%)之碳酸錳和氧化銅(MnCO3 -CuO)混合物及96.5至80重量百分比(wt%)之二氧化鈦(rutile)。The low temperature co-fired dielectric composition of the present invention can be applied to laminated ceramic elements. In this application, the low temperature co-fired dielectric composition is mixed with an organic vehicle to form a slurry comprising 70 to 85 weight percent (wt%) of a low temperature co-fired dielectric composition and 15 to 30 weight percent (wt %) an organic carrier; a green sheet is obtained by a doctor blade forming process, and then a laminated ceramic component is obtained by a conventional technique such as screen printing conductor paste, lamination and co-firing. The low temperature co-fired dielectric composition comprising 3.5 to 20 weight percent (wt%) of a mixture of manganese carbonate and copper oxide (MnCO 3 -CuO) and 96.5 to 80 weight percent (wt%) of titanium dioxide (rutile) .
另在於本發明一種製備介電陶瓷元件之方法,其包括將低溫共燒介電組合物之粉末製成生胚,並將該生胚於溫度低於攝氏962度(℃)下進行緻密化。其中,該緻密化步驟包括第一階段脫脂與第二階段燒結,且於空氣中進行較佳。如熟悉此項技藝者所知,該脫脂階段係為清除生胚內之有機黏結劑,燒結階段則可使胚體緻密化;於本發明中,其較佳的燒結條件係於攝氏875至925度(℃)持溫60分鐘;由此緻密化步驟所得之介電陶瓷元件於1MHz下具70至101之介電常數及低於0.5百分比(%)之介電損失,因此符合業界對於高介電常數與低介電損失之需求。Further, in a method of preparing a dielectric ceramic component of the present invention, the powder of the low temperature co-fired dielectric composition is formed into a green embryo, and the green embryo is densified at a temperature lower than 962 degrees Celsius (° C.). Wherein, the densification step comprises a first stage degreasing and a second stage sintering, and is preferably carried out in air. As is known to those skilled in the art, the degreasing stage is to remove the organic binder in the green embryo, and the sintering stage can densify the embryo body; in the present invention, the preferred sintering conditions are in the range of 875 to 925 Celsius. Degree (°C) is held for 60 minutes; the dielectric ceramic component obtained by the densification step has a dielectric constant of 70 to 101 at 1 MHz and a dielectric loss of less than 0.5% (%), thus meeting the industry's The need for electrical constants and low dielectric losses.
可以理解,前面技術實施時的描述和下面的詳細較佳可行實施例說明都是示例性和說明性的,在下列本發明所述的實施例,係用以進一步說明本發明,但不限制本發明專利範圍。故凡熟悉此項技術之人士所知之替換與修飾,仍均涵蓋於本發明之精神與範圍內,合予陳明。The description of the prior art and the following detailed description of the preferred embodiments are illustrative and illustrative. The embodiments of the invention described below are intended to further illustrate the invention but not to limit the invention. The scope of invention patents. All the alternatives and modifications known to those skilled in the art are still included in the spirit and scope of the present invention and are combined with Chen Ming.
請參閱第一~四圖所示、係本發明各實施例的材料成份、製程條件與性質。其中;Please refer to the material composition, process conditions and properties of the embodiments of the present invention as shown in the first to fourth figures. among them;
實施例一: 先以碳酸錳:氧化銅,依重量百分比等於1:1的成分比例,量取純度99百分比(%)以上的碳酸錳、氧化鋼等陶瓷粉末共40公克(g),將配製好的粉末加入已裝有32毫升(CC)正丙醇(1-propyl alcohol)和46公克(g)氧化鋁磨球的100毫升(CC)塑膠(PE)瓶中,以三度空間懸臂混粉機混合2小時後,置於攝氏80度(℃)之烘箱烘乾,烘乾完的粉末以研缽和杵研磨均勻, 放入二氧化鋯(ZrO2 )坩鍋內後置於高溫爐中,以每分鐘攝氏5度(℃/min)的升溫速度加熱到攝氏740度(℃)持溫2小時進行鍛燒接著爐冷,將鍛燒完畢的粉末加入已裝有500g二氧化鋯(ZrO2 )磨球、55毫升(CC)正丙醇(1-propyl alcohol)及0.15毫升(CC)分散劑(Darvan C)的250毫升(CC)塑膠(PE)瓶中,球磨72小時後,放入攝氏80度(℃)的烘箱烘乾,烘乾完的粉末以研缽和杵研磨後即得到所需要的助燒劑(MC)。 Example 1: First, manganese carbonate: copper oxide, according to the proportion of the weight percentage of 1:1, the purity of 99% (%) or more of manganese carbonate, oxidized steel and other ceramic powder a total of 40 grams (g), will be formulated A good powder is added to a 100 ml (CC) plastic (PE) bottle containing 32 ml of (CC) 1-propyl alcohol and 46 g (g) alumina grinding balls, and cantilevered in a three-degree space. After mixing for 2 hours, the powder is dried in an oven at 80 ° C (°C). The dried powder is evenly ground in a mortar and pestle, placed in a zirconium dioxide (ZrO 2 ) crucible and placed in a high temperature furnace. Medium, heated to 740 degrees Celsius (°C/min) per minute, heated to 740 degrees Celsius (°C) for 2 hours, calcined and then furnace cooled, and the calcined powder was added to have been filled with 500 g of zirconium dioxide ( ZrO 2 ) Grinding ball, 55 ml (CC) of 1-propyl alcohol and 0.15 ml (CC) dispersant (Darvan C) in 250 ml (CC) plastic (PE) bottles, after ball milling for 72 hours, It is dried in an oven at 80 ° C (° C.), and the dried powder is ground in a mortar and pestle to obtain the desired sintering aid (MC).
以3.5重量百分比(wt%)助燒劑(MC)加上96.5重量百分比(wt%)二氧化鈦(TiO2 )、5重量百分比(wt%)助燒劑(MC)加上95重量百分比(wt%)二氧化鈦(TiO2 )、10重量百分比(wt%)助燒劑(MC)加上90重量百分比(wt%)二氧化鈦(TiO2 )、15重量百分比(wt%)助燒劑(MC)加上85重量百分比(wt%)二氧化鈦(TiO2 )及20重量百分比(wt%)助燒劑(MC)加上80重量百分比(wt%)二氧化鈦(TiO2 )之比例,量取助燒劑(MC)與純度99百分比(%)以上之二氧化鈦(TiO2 )粉末共20公克(g),放入已裝有46公克(g)氧化鋁磨球、16毫升(CC)的正丙醇(1-propyl alcohol)及5重量百分比(wt%)聚乙二醇(polyethylene glycol 200,PEG 200)的100毫升(CC)塑膠(PE)瓶中,以三度空間懸臂混粉機混合2小時後,置於攝氏80度(℃)之烘箱烘乾,烘乾後的粉末以研缽和杵研磨,形成備用低溫共燒介電組合物的粉末。3.5% by weight (wt%) co-firing agent (MC) plus 96.5 weight percent (wt%) titanium dioxide (TiO 2 ), 5 weight percent (wt%) combustion aid (MC) plus 95 weight percent (wt% Titanium dioxide (TiO 2 ), 10 weight percent (wt%) combustion aid (MC) plus 90 weight percent (wt%) titanium dioxide (TiO 2 ), 15 weight percent (wt%) combustion aid (MC) plus 85 weight percent (wt%) titanium dioxide (TiO 2 ) and 20 weight percent (wt%) combustion aid (MC) plus 80 weight percent (wt%) titanium dioxide (TiO 2 ) ratio, the amount of the combustion aid (MC ) 20 g (g) of titanium dioxide (TiO 2 ) powder having a purity of 99% or more by weight, and put into n-propanol (1) containing 46 g (g) of alumina grinding balls and 16 ml of (CC). Propyl alcohol) and 5 weight percent (wt%) polyethylene glycol 200 (PEG 200) in 100 ml (CC) plastic (PE) bottles, mixed in a three-degree space cantilever mixer for 2 hours, The oven is dried at 80 degrees Celsius (° C.), and the dried powder is ground with a mortar and pestle to form a powder of the alternate low temperature co-fired dielectric composition.
秤取所述備用低溫共燒介電組合物的粉末0.8公克(g),放入直徑13公釐(mm)的圓形壓模中,以90毫巴(MPa)的壓力持壓15秒(sec),將粉末壓片成型製成生胚。0.8 g (g) of the powder of the standby low-temperature co-fired dielectric composition was weighed, placed in a circular die having a diameter of 13 mm, and held at a pressure of 90 mbar (MPa) for 15 seconds ( Sec), the powder is tableted into a green embryo.
將準備好的生胚放入高溫爐中,在大氣氣氛下,以每分鐘攝氏3度(℃/min)的速率升溫到攝氏500度(℃)持溫一小時,藉以去除生胚內的有機黏結劑,隨即以每分鐘攝氏5度(℃/min)的速率升溫到攝氏875度(℃)、攝氏900度(℃)或攝氏925度(℃)持溫1小時後爐冷,形成相對燒結密度之緻密化燒結完成的試片。The prepared raw embryos are placed in a high-temperature furnace and heated to a temperature of 3 degrees Celsius (°C/min) to 500 degrees Celsius (°C) for one hour in an air atmosphere to remove organic matter in the embryo. The binder is then heated to a temperature of 5 degrees Celsius (°C/min) to 875 degrees Celsius (°C), 900 degrees Celsius (°C) or 925 degrees Celsius (°C). After holding for 1 hour, the furnace is cooled to form a relative sintering. Densified densified sintered test piece.
所述燒結完成的試片,利用阿基米德原理量得燒結體的相對燒結密度,在 此實施例所得到的相對燒結密度於攝氏900度(℃)之3.5重量百分比(wt%)助燒劑(MC)加上96.5重量百分比(wt%)二氧化鈦(TiO2 )、5重量百分比(wt%)助燒劑(MC)加上95重量百分比(wt%)二氧化鈦(TiO2 )的試片及攝氏925度(℃)之各添加比例的試片,皆可使相對燒結密度高於95百分比(%)以上,此結果與燒結體破斷面的掃瞄式電子顯微照片結果相符。The sintered test piece was obtained by using the Archimedes principle to obtain the relative sintered density of the sintered body, and the relative sintered density obtained in this example was 3.5 weight percent (wt%) of the 900 degree Celsius (° C.). Agent (MC) plus 96.5 weight percent (wt%) titanium dioxide (TiO 2 ), 5 weight percent (wt%) combustion aid (MC) plus 95 weight percent (wt%) titanium dioxide (TiO 2 ) test piece and The test pieces of each of the added ratios of 925 ° C (° C.) can make the relative sintered density higher than 95% (%) or more, which is consistent with the results of the scanning electron micrograph of the fracture surface of the sintered body.
將燒結完的試片上下表面各塗上一層低溫銀膠,放入攝氏80度(℃)烘箱中烘乾後,以HP4192量測電容值(Cp)和介電損失(tan δ),經由下列公式求得介電常數(K)。The upper and lower surfaces of the sintered test piece are coated with a layer of low-temperature silver glue, and dried in an oven at 80 ° C (° C.), and the capacitance value (Cp) and dielectric loss (tan δ) are measured by HP4192. The formula finds the dielectric constant (K).
Cp=(K ε0 A)/t其中ε0 為真空介電常數,t為兩電極板間距,A為電極板面積。Cp=(K ε 0 A)/t where ε 0 is the vacuum dielectric constant, t is the distance between the two electrode plates, and A is the area of the electrode plate.
在此實施例一中所得到的結果列於第一圖(如編號1至編號15所示)。The results obtained in this first embodiment are shown in the first figure (as indicated by number 1 to number 15).
實施例二: 本實施例除了助燒劑其中成分改為碳酸錳:氧化銅之重量百分比等於1:3外,其餘製程與量測程序均與實施例一相同。在此實施例所得到的相對燒結密度除攝氏875度(℃)之15重量百分比(wt%)助燒劑(MC)加上85重量百分比(wt%)二氧化鈦(TiO2 )和20重量百分比(wt%)助燒劑(MC)加上80重量百分比(wt%)二氧化鈦(TiO2 )外,其餘之相對燒結密度皆高於95百分比(%)以上,介電常數為70至98,介電損失皆小於0.5百分比(%);在此實施例二中所得到的結果列於第二圖(如編號16至編號30所示)。 Example 2: In this example, except for the sintering aid, wherein the composition is changed to manganese carbonate: the weight percentage of copper oxide is equal to 1:3, the other processes and measurement procedures are the same as in the first embodiment. The relative sintered density obtained in this example was 15 weight percent (wt%) of the sintering aid (MC) plus 85 weight percent (wt%) of titanium dioxide (TiO 2 ) and 20 weight percent (in terms of 875 degrees Celsius (° C.). The wt%) co-firing agent (MC) plus 80% by weight (wt%) of titanium dioxide (TiO 2 ), the other relative sintered density is higher than 95% (%) or more, the dielectric constant is 70 to 98, dielectric The losses are all less than 0.5% (%); the results obtained in this second embodiment are listed in the second figure (as indicated by number 16 to number 30).
實施例三: 本實施例除了助燒劑成分改為碳酸錳:氧化銅之重量百分比等於1:6外,其餘製程與量測程序均與實施例一相同。在此實施例所得到的相對燒結密度皆大於95百分比(%),介電常數為74至98,介電損失皆小於0.5百分比(%);在此實施例三中所得到的結果列於第三圖(如編號31至編號45所示)。 Example 3: In this example, except that the composition of the sintering aid was changed to manganese carbonate: the weight percentage of copper oxide was equal to 1:6, the other processes and measurement procedures were the same as in the first embodiment. The relative sintered densities obtained in this example are all greater than 95% (%), the dielectric constant is 74 to 98, and the dielectric loss is less than 0.5% (%); the results obtained in the third embodiment are listed in the first Three figures (as indicated by number 31 to number 45).
實施例四: 本實施例除了助燒劑成分改為碳酸錳:氧化銅之重量百分比等於0:1外,其餘製程與量測程序均與實施例一相同。在此實施例所得到的相對 燒結密度皆大於95百分比(%),介電常數為77至101,但是介電損失皆遠大於0.5百分比(%);在此實施例四中所得到的結果列於第四圖(如編號46至編號60所示)。 Embodiment 4: In this embodiment, except that the composition of the sintering aid is changed to manganese carbonate: the weight percentage of copper oxide is equal to 0:1, the other processes and measurement procedures are the same as in the first embodiment. The relative sintered densities obtained in this example are all greater than 95% (%), and the dielectric constant is 77 to 101, but the dielectric loss is much greater than 0.5% (%); the results obtained in this embodiment 4 are listed. In the fourth picture (as indicated by number 46 to number 60).
在上述的實施例二和實施例三中,所有二氧化鈦(TiO2 )加上助燒劑(MC)flux的低溫共燒介電組合物,均可在低於攝氏900度(℃)下完成94百分比(%)以上的緻密化。由於完成高緻密化所需的燒結溫度與低熔點、低阻抗的導體如銀均能相容,因此在實施例二和實施例三中所有的介電成分均可與銀導體共燒製成積層低溫共燒介電組合物的元件。In the above-mentioned Example 2 and Example 3, all low-temperature co-fired dielectric compositions of titanium dioxide (TiO 2 ) plus combustion aid (MC) flux can be completed at less than 900 ° C (° C). Densification above percentage (%). Since the sintering temperature required to complete the high densification is compatible with the low melting point, low impedance conductor such as silver, all of the dielectric components in the second and third embodiments can be co-fired with the silver conductor to form a laminate. A component of a low temperature co-fired dielectric composition.
在製程上,製成所述的積層低溫共燒介電組合物的元件,首先必須將上述的低溫共燒介電組合物與有機溶劑(如甲苯與乙醇)、有機黏結劑(如聚乙烯縮丁醛(PVB))及塑化劑(如酸二丁酯(DBP))混合形成漿料,經刮刀成形產製厚度約為125微米(μm)的生胚薄片,然後經沖片裁成10公分(cm)見方的生胚薄片。In the process, the components of the laminated low-temperature co-fired dielectric composition are prepared by firstly adding the above-mentioned low-temperature co-fired dielectric composition to an organic solvent (such as toluene and ethanol) and an organic binder (such as polyethylene). Butanal (PVB) and a plasticizer (such as dibutyl acid (DBP)) are mixed to form a slurry, and a green sheet having a thickness of about 125 μm is formed by doctor blade forming, and then cut into 10 pieces by punching. Centrifugal (cm) square raw germ flakes.
利用模具在生胚薄片上打孔,孔徑約為125微米(μm),經網印將導體膏如銀填入孔中。另外,在生胚薄片上的導體線路亦經網印製成。A hole is punched in the green sheet by a mold having a pore size of about 125 μm, and a conductor paste such as silver is filled into the hole by screen printing. In addition, the conductor tracks on the green sheets are also screen printed.
所述網印與填孔好的生胚薄片再依序堆疊,經疊壓製成積層低溫共燒介電組合物的生胚,疊壓條件為攝氏60至100度(℃)與1000至3000每寸/磅(psi)。最後,積層低溫共燒介電組合物的生胚在空氣氣氛中經脫脂與共燒完成緻密化。The screen printing and the well-filled green embryo sheets are sequentially stacked, and laminated to form a green layer of a low-temperature co-fired dielectric composition, and the lamination conditions are 60 to 100 degrees Celsius (° C.) and 1000 to 3000 per gallon. Inch/lb (psi). Finally, the green embryos of the laminated low-temperature co-fired dielectric composition are densified by degreasing and co-firing in an air atmosphere.
另外,在各實施例中的低溫共燒介電組合物,亦可經由傳統製成如乾壓、冷均壓與熱均壓製成各種不同用途的陶瓷體。以乾壓為例,該低溫共燒介電組合物可以水和黏結劑(如聚乙烯醇(PVA))混合,經噴霧造粒後,改進粉體的流動性,再經乾壓、脫酯與燒結即可製成低溫共燒介電組合物之陶瓷體成品。In addition, the low-temperature co-fired dielectric composition in each embodiment can also be made into a ceramic body of various uses such as dry pressing, cold equalizing and hot equalizing. Taking dry pressure as an example, the low-temperature co-fired dielectric composition can be mixed with water and a binder (such as polyvinyl alcohol (PVA)), and after spray granulation, the fluidity of the powder is improved, followed by dry pressing and de-esterification. The finished ceramic body can be made into a low-temperature co-fired dielectric composition by sintering.
綜上所述,本發明在突破先前之技術結構及製造方法下,確實已達到所欲增進之功效,且也非熟悉該項技藝者所易於思及;再者,本發明申請前未曾公開,其所具之進步性、實用性,顯已符合發明專利之申請要件,爰依法提出發明申請。In summary, the present invention has achieved the desired effect under the prior art structure and manufacturing method, and is not easily understood by those skilled in the art; further, the present invention has not been disclosed before the application. Its progressive and practical nature has been consistent with the application requirements of the invention patent, and the invention application has been filed according to law.
第一圖係本發明之實施例一的材料成份、製程條件與性質。The first figure is the material composition, process conditions and properties of the first embodiment of the present invention.
第二圖係本發明之實施例二的材料成份、製程條件與性質。The second figure is the material composition, process conditions and properties of the second embodiment of the present invention.
第三圖係本發明之實施例三的材料成份、製程條件與性質。The third figure is the material composition, process conditions and properties of the third embodiment of the present invention.
第四圖係本發明之實施例四的材料成份、製程條件與性質。The fourth figure is the material composition, process conditions and properties of the fourth embodiment of the present invention.
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5246628A (en) * | 1990-08-16 | 1993-09-21 | Korea Institute Of Science & Technology | Metal oxide group thermistor material |
| US6309993B1 (en) * | 1999-04-28 | 2001-10-30 | National Science Council Of Republic Of China | Low-fire microwave dielectric compositions |
| TW499691B (en) * | 2000-07-03 | 2002-08-21 | Advanced Ceramic X Corp | Low-fire microwave dielectric composition |
| US20060148638A1 (en) * | 2003-04-02 | 2006-07-06 | Korea Institute Of Science And Technology | Low-fire high-permittivity dielectric compositions |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5246628A (en) * | 1990-08-16 | 1993-09-21 | Korea Institute Of Science & Technology | Metal oxide group thermistor material |
| US6309993B1 (en) * | 1999-04-28 | 2001-10-30 | National Science Council Of Republic Of China | Low-fire microwave dielectric compositions |
| TW499691B (en) * | 2000-07-03 | 2002-08-21 | Advanced Ceramic X Corp | Low-fire microwave dielectric composition |
| US20060148638A1 (en) * | 2003-04-02 | 2006-07-06 | Korea Institute Of Science And Technology | Low-fire high-permittivity dielectric compositions |
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