TWI383061B - Magnetron sputtering electrode and sputtering device using magnetron sputtering electrode - Google Patents

Description

Magnetron sputtering electrode and sputtering device using magnetron sputtering electrode

The present invention relates to a magnetron sputtering electrode for forming a specific thin film on a substrate by magnetron sputtering, and a sputtering device using the magnetron sputtering electrode.

In the magnetron sputtering method, in the rear of the target (on the side opposite to the sputter surface), the polarity is alternately changed on a support plate of a specific shape, and a magnet provided with a plurality of magnets is mounted. With the magnet mounting body, a tunnel-shaped magnetic flux is formed in front of the target (sputtering surface side), and secondary electrons generated by ionized electrons and sputtering are captured in front of the target to improve the target. The electron density in front increases the electrons and increases the collision accuracy with the gas molecules introduced into the rare gas in the vacuum chamber, thereby increasing the plasma density. Therefore, there is an advantage that the film formation speed can be improved, and the like can be effectively utilized when a specific film is formed on a handle substrate.

However, when such a sputtering apparatus is used for film formation, for example, due to electron drift in the plasma due to discharge, the plasma itself deviates in front of the target. At this time, in the entire target, it is impossible to obtain an erosion region having a wide range, and there is a problem that the film thickness distribution in the surface of the processing substrate is likely to be deteriorated.

Therefore, it can be seen that a magnetic body (magnetic shunt resistance) is set between the target and the magnet mounting body at a fixed position, and the tunnel-shaped magnetic flux generated between the magnets of the magnet mounting body is adjusted to make a shape. The above-described problem is solved by homogenizing the plasma generated in front of the target (for example, Patent Document 1).

[Patent Document 1] Japanese Laid-Open Patent Publication No. Hei 9-20979 (for example, the disclosure of the patent application).

However, in the above, since the magnetic body is provided by fixing the arrangement position between the target and the magnet mounting body, it is necessary to temporarily adjust the tunnel-shaped magnetic flux shape even when the film thickness of the processing substrate is formed. When it is necessary to adjust the arrangement position of the magnetic shunt resistor, the sputtering chamber is temporarily returned to the atmosphere, and the target is taken out, or the operation can be performed only after the magnet mounting body is taken out from the sputter electrode, which may cause the operation. Adjustment work becomes a cumbersome problem.

Therefore, in view of the above problems, an object of the present invention is to provide a magnetron sputtering electrode which can easily adjust the shape of a channel-shaped magnetic flux generated between magnets of a magnet mounting body, and to use a magnetron splash Electroplated electrode plating device.

In order to achieve the above object, the magnetron sputtering electrode of the first application of the patent scope includes a target and a magnet mounting body disposed behind the target, and a channel-shaped magnetic flux should be formed in front of the target. The support magnet is provided with a central magnet and a peripheral magnet, and the magnet mounting body is characterized in that the divided central portion is fixed by dividing the two sides of the supporting plate including the central magnet and the peripheral magnet. The divided portion is attached to the substrate via a position changing means that is movable in the left-right direction and the vertical direction with respect to the center portion.

According to this, when the divided portions on both sides are moved toward the central portion by the position changing means, the shape of the tunnel-shaped magnetic flux generated between the magnets of the magnet mounting body changes, and the outer shape can be appropriately adjusted. In this case, since the position changing means is located on the back surface of the support plate provided behind the target, for example, the support plate including the target or the substrate is not required to be taken out, and the tunnel-shaped magnetic flux shape can be adjusted, and the adjustment work can be simplified. . Further, in general, since the magnet mounting body is disposed outside the sputtering chamber, it is not necessary to temporarily return the sputtering chamber to the atmosphere, and the shape of the magnetic flux can be adjusted while forming a film depending on the situation.

The magnet mounting body is divided, for example, below the outer end portion of the processing substrate disposed opposite to the target.

However, in the case of the target to be produced by processing the composition of the substrate, the central magnet and the peripheral magnet used in the magnet assembly may be changed to have different magnetic field strengths. In this case, when the number of divisions on both sides of the magnet mounting body is changed in accordance with the magnetic field strength of the central magnet and the peripheral magnet to be used, for example, when a central magnet having a strong magnetic field strength or a peripheral magnet is used, when the number of divisions is increased, the number of divisions may be increased. Micro-adjust the shape of the magnetic beam.

Further, the magnet mounting body may be provided with a driving means for moving the magnetic flux in parallel with the target and moving in parallel.

Further, the sputtering apparatus of claim 5 is characterized in that a specific interval is reserved, and a plurality of magnetron sputtering electrodes of any one of claims 1 to 4 are provided for each standard. The target interacts with a DC power source or an AC power source that applies a negative potential, a ground potential, or a positive potential.

According to this, by the proximity of the targets, the spacing between the magnet mounting bodies can be reduced, in particular, magnetic field interference occurs between the peripheral magnets adjacent to each other, and the balance of the collapse magnetic field is in each magnetron. In the sputter electrode, by adjusting the shape of the magnetic flux, the plasma generated in front of each target can be homogenized. Therefore, even when a film is formed on a substrate having a large area, it is possible to form a film having a high film thickness distribution or uniformity of film quality distribution during reactive sputtering.

As described above, the magnetron sputtering electrode of the present invention has an effect of achieving an outer shape of a channel-shaped magnetic flux which can be easily adjusted between the magnets of the magnet assembly.

Referring to Fig. 1, reference is made to a magnetron type sputtering device (hereinafter referred to as "sputtering device") according to the first embodiment. The sputtering apparatus 1 is of an on-line type and has a sputtering chamber 11 which can be maintained at a specific degree of vacuum by a vacuum evacuation means (not shown) such as dry pumping or turbo molecular pumping. A substrate transporting means 2 is provided at an upper portion of the sputtering chamber 11. The substrate transporting means 2 has a well-known structure, and includes, for example, a carrier 21 on which the processing substrate S is mounted, and intermittently drives the driving means to sequentially transport the processing substrate S to a magnetron sputtering electrode to be described later. Towards the location.

Further, the gas introduction means 3 is provided in the sputtering chamber 11. The gas introduction means 3 communicates with the gas source 33 via the gas pipe 32 through which the mass flow controller 31 is disposed, and can also use O ₂ , H ₂ O, and H used for sputtering or sputtering of Ar or the like. _A reaction gas such as N or N _{2 is} introduced into the sputtering chamber 11 at a constant flow rate. A magnetron sputtering electrode C is disposed on the lower side of the sputtering chamber 11.

The magnetron sputtering electrode C has a target 41 having a substantially rectangular parallelepiped shape (a rectangular shape viewed from above) disposed opposite to the processing substrate S. The target 41 is produced by a known method in response to a composition of a film which is to be formed on the substrate S by Al, Ti, Mo or ITO. The target 41 is bonded to the backing plate 42 for cooling the target 41 during sputtering by a solder material such as indium or tin, and is attached to the frame 44 of the magnetron sputtering electrode C via the insulating plate 43. Further, in order to stably generate plasma, a ground shield (not shown) is provided around the target 41 so as to surround the periphery of the target 41. At this time, only the target 41 and the ground shield are placed in the sputtering chamber 11 by a vacuum sealing means such as an O-ring (not shown).

Further, the magnetron sputtering electrode C is located behind the target 41 and is provided with the magnet mounting body 5. The magnet mounting body 5 has a support plate 51 provided in parallel with the target 41. The support plate 51 has a lateral width smaller than that of the target 41, and is formed of a rectangular flat plate formed along the longitudinal direction of the target 41 and extending toward both sides thereof, and is a magnetic material that increases the absorbing power of the magnet. Made by. The support plate 51 is provided with a rod-shaped central magnet 52 along the longitudinal direction of the target 41, and a peripheral magnet 53 provided along the outer circumference of the support plate 51. In this case, the volume converted to the same magnetization of the central magnet 52 is equal to, for example, the sum of the volume converted to the same magnetization of the central magnet 52 (peripheral magnet: center magnet: peripheral magnet = 1:2:1). And set.

Thereby, a tunnel-shaped magnetic flux having a symmetrical closed ring shape is formed in front of each target 41, and the target 41 can be improved by capturing electrons ionized in front of the target 41 and secondary electrons generated by sputtering. The electron density in front and the increase in plasma density.

Then, the processing substrate S is transported to a position facing the target 41 by the substrate transporting means 2, and a specific sputtering gas is introduced through the gas introducing means 3. When a negative DC voltage or a high-frequency voltage is applied to the target 41 via the sputtering power source 6 connected to the target 41, a vertical electric field is formed on the processing substrate S and the target 41, and is generated in front of the target 41. The plasma is sprayed and the target 41 is sputtered to form a film on the processing substrate S.

At this time, the magnet mounting body 5 is provided with a driving means such as a motor (not shown), and the driving means moves back and forth in parallel and constant speed between the positions along the horizontal direction 2 of the target 41, and A uniform erosion zone can be obtained at all in the target 41.

Here, as will be described with reference to FIGS. 2 to 4, as described above, when the magnet mounting body 5 is formed and plasma is generated in front of the target 41, the electrons in the plasma move clockwise along the magnetic field trajectory. . At this time, when coming to both sides along the longitudinal direction of the target 41, the electric field is bent to change the direction. At this time, due to the residual inert motion, the fly is made upward on the left side of the target 41, and When the target 41 is sputtered while moving the magnet mounting body 5 while moving the magnet mounting body 5, the erosion region E is directed upward in the left side of the target 41, on the right side of the target 41. Partial extension in the downward direction (see Figure 2)).

At this time, in order to prevent the plasma from being generated outside the target 41, it is necessary to reduce the amount of movement of the magnet mounting body 5 in consideration of the electron flying out, thereby increasing the non-erosion area and increasing the target 41. With the efficiency, it is necessary to uniformly erode to the outer peripheral portion of the target.

Therefore, in the present embodiment, the opposite sides of the support plate 51 including the center magnet 52 and the peripheral magnet 53 are divided, that is, the both sides along the longitudinal direction of the support plate 51 are divided and supported by: One central portion 5a composed of a plate 51, a central magnet 52, and a peripheral magnet 53; and two divided portions 5b, 5c. In this case, when the position is placed on the processing substrate S provided on the carrier 21 and is opposed to the target 41, the position is set below the outer end portions of the processing substrate S along the longitudinal direction (see the 2 picture).

The central portion 5a is fixed to the substrate 54. At this time, the substrate 54 is made of, for example, a non-magnetic material, and the central portion is formed in a convex shape so as to protrude in the longitudinal direction thereof, and is joined by the central portion 5a which conforms to the shape of the protruding upper surface 54a. And fixed. The elongated portion 54b extending uniformly from the central portion of the substrate 54 to the extending portions 54b on both sides is formed with an elongated hole 54c that faces the longitudinal direction of the substrate 54 and the direction intersecting the longitudinal direction. Figure and Figure 4).

A bolt B having a spacer W attached to the bolt shaft is inserted into the long hole 54c. The front end of the bolt shaft is a screw hole (not shown) formed on the back side of the support plate 51 constituting the divided portions 5b and 5c. Screwing. Further, between the back side of the support plate 51 constituting the divided portions 5b and 5c and the extended portion 54b, an interval made of a non-magnetic material in which an opening (not shown) through which the bolt shaft can be inserted is disposed. In the case of the member 55, the spacer 55 has a function of maintaining the height of the extended portion 54b to the back surface of the support plate 51 while the screw hole is screwed.

At this time, the long hole 54c formed in the bolt B, the extended portion 54b, and the spacer 55 constitute a position changing means, and the central portion 5a or the target 41 can be opposed by the position changing means. The divided portions 5b and 5c are moved in the front-rear direction, the left-right direction, and the vertical direction to be held. Thereby, when the divided portions 5b and 5c are moved, the tunnel-shaped magnetic flux generated between the central magnet 52 and the peripheral magnet 53 is externally changed, and the outer shape can be appropriately adjusted.

In other words, the bolt B is temporarily relaxed, and the bolt B is moved only along the long hole 54c so as to be opposite to the center portion 5a of the divided portions 5b, 5c in the front-rear direction and the left-right direction (along the longitudinal direction of the magnet mounting body 5). The position of the left-right direction of Fig. 3 is changed, and only the height of the spacer 55 is changed, and the position in the up-and-down direction with respect to the center portion 5a is changed. At this time, since the position changing means is located on the back side of the support plate 51 provided behind the target 41, the support plate 51 including the target 41 or the substrate 54 is not taken out, and the tunnel-shaped magnetic flux shape can be adjusted. And the adjustment work can be simplified. Moreover, since it is disposed outside the sputtering chamber 11, it is not necessary to temporarily return the sputtering chamber 11 to the atmosphere, whereby film formation can be performed and the outer shape of the magnetic flux can be adjusted.

Thereby, for example, the extension of the local erosion region E due to the inert movement of electrons in the plasma causes the divided portions 5b, 5c to move in the front-rear direction, and in the slightly rounded erosion region, the division portion is made The parts 5b and 5c are moved in the left-right direction, and the erosion region is expanded to the edge of the target 41 along the moving direction of the magnet mounting body 5. As a result, the amount of movement of the magnet mounting body 5 can be increased, and the target can be achieved. The higher utilization efficiency of the target, and the film thickness distribution in the surface of the treated substrate can be made substantially uniform.

Further, in the present embodiment, the position changing means is constituted by the bolt B, the long hole 54c formed in the extended portion 54b, and the spacer 55. However, the present invention is not limited thereto, and the central portion can be used. When the portion 5a is opposed to the front and rear direction, the left and right direction, and the up and down direction, the divided portions 5b and 5c are moved and held, and the form thereof is not limited.

Further, in the present embodiment, the divided central portions 5a and the divided portions 5b and 5c on both sides are described, but the number of divisions is not limited thereto. For example, as shown in Fig. 5, the divided portions 5b and 5c may be further divided into two, and the magnet mounting body 50 may be constituted by five portions. At this time, when the target of the ITO is used, when the magnetic field strength is high, the central magnet 52 and the peripheral magnet 53 used in the magnet mounting body 50 can finely adjust the outer shape of the magnetic flux.

In the present embodiment, a single magnetron sputtering electrode C is provided in the sputtering chamber 11, but when a large-area processing substrate S is formed, as shown in Fig. 6, for example, it is configured in parallel. The six target targets 41a to 41f and the magnet mounting bodies 50a to 50f may constitute the magnetron sputtering electrode C1 of the sputtering apparatus 10.

At this time, the sputtering surfaces 411 of the targets 41a to 41f which are not in use are disposed in such a manner as to be located on the same plane parallel to the processing substrate S, with the side faces 412 facing the respective targets 41a to 41f therebetween. There are no components such as an anode or a shield. The outer dimensions of the respective targets 41a to 41f are set to be larger than the outer dimensions of the processing substrate S when the respective targets 41a to 41f are provided.

Three AC power sources 61, 62, and 63 to which an AC voltage is applied are connected to the respective targets 41a to 41f, and one central portion 5a and two divided portions are disposed behind the targets 41a to 41f. The magnet mounting bodies 50a to 50f of the parts 5b and 5c. At this time, one AC power source 61 is divided for two targets (for example, 41a, 41b) adjacent to each other, and when a negative potential is applied to one of the targets 41a, a ground potential or positive is applied to the other target 41b. Potential. Further, instead of the AC power sources 61, 62, 63, a DC power source may be used.

For example, a negative potential is applied to one of the targets 41a, 41c, and 41e via the AC power sources 61, 62, and 63, and a ground potential or a positive potential is applied to the other targets 41b, 41d, and 41f. The targets 41b, 41d, and 41f have the function of an anode, and between the targets respectively connected to one AC power source 61, 62, 63 (for example, 41a and 41b), plasma is separately generated, and sputtering is negatively applied. Potential targets 41a, 41c, 41e. Then, when the potentials of the targets 41a to 41f are switched in accordance with the frequencies of the AC power sources 61, 62, 63, by sputtering the other targets 41b, 41d, 41f, the targets 41a can be alternately sputtered to each other. 41f, and the entire surface of the substrate S is processed to form a film.

Thereby, between the targets 41a to 41f in which the sputtered particles are not released, since it is not necessary to provide any constituent parts such as an anode or a shield, it is possible to reduce the area where the sputtered particles are not released as much as possible; And each of the magnet mounting bodies 50a to 50f is opposed to the central portion 5a by the position changing means, and the divided portions 5b, 5c are moved in either of the front-rear direction, the left-right direction, and the up-and-down direction, and each of them can be moved. The tunnel-shaped magnetic flux shape generated in front of each of the targets 41a to 41f is not adjusted, and the high utilization efficiency of each of the targets 41a to 41f can be achieved, and the film thickness distribution in the surface of the processing substrate S can be made slightly uniform.

As the support plate 51 of each of the magnet mounting bodies 50a to 50f, for example, an outer shape having a size of 130 mm × 1460 mm is used, and a rod-shaped central magnet 52 along the longitudinal direction of the targets 41a to 41f is provided on the support plate 51. And the magnet mounting bodies 5a to 5b of the peripheral magnet 53 along the outer periphery of the target 41 are preferably 50 mm or less, more preferably 10 to 20 mm, from the central portion 5a by the position changing means. The divided portions 5b and 5c are oriented in the front-rear direction and the left-right direction, and when the central portion 5a is 20 mm or less, and preferably in the range of 0 to 15 mm, and is moved in the vertical direction and adjusted, the respective labels can be adjusted. The shape of the tunnel-shaped magnetic flux generated in front of the targets 41a to 41f is optimally adjusted.

Further, in the same manner as in the above-described embodiment, a uniform erosion region can be obtained in all of the targets 41a to 41f, and the high utilization efficiency of the targets 41a to 41f can be achieved, and the target device 41 can be used in the target D. 41a to 41f move in parallel between the positions of two points (L point, R point) in the horizontal direction. At this time, the magnet mounting bodies 50a to 50f are attached to the drive shaft D1 of the driving means D, and the magnet mounting bodies 50a to 50f can be moved back and forth in parallel.

However, when configured as described above, the magnet mounting bodies 50a to 50f are provided close to each other, and the magnetic field balance may be collapsed on both sides along the direction in which the magnet mounting bodies 50a to 50f are arranged. Therefore, the rod-shaped auxiliary magnets 7 are provided so as to match the polarities of the peripheral magnets 53 of the magnet mounting bodies 50a and 50f positioned at both ends, and the support portion 71 supporting the auxiliary magnets 7 is attached to the drive shaft D1 of the cylinder D. It moves integrally with the magnet mounting bodies 50a to 50f. Thereby, the magnetic flux density at both ends of the magnet mounting bodies 50a to 50f can be increased, and the magnetic field balance can be improved, or the film thickness distribution in the surface of the processing substrate S or the film quality distribution during reactive sputtering can be made uniform.

[Example 1]

In the present embodiment, the ITO film is formed on the processing substrate S by using the sputtering apparatus 10 shown in FIG. At this time, when a glass substrate (1200 mm × 1000 mm) is used as the processing substrate S, 10% by weight of SnO _{2 is} added to In ₂ O ₃ as the targets 41a to 41f, and a known method is used. It has an outer dimension of 230 mm x 1460 mm and is joined to the backing plate 42. Then, an ITO film was formed on the glass substrate S by reactive sputtering.

Further, an outer shape having a size of 130 mm × 1460 mm is used as the support plate 51 for each of the magnet mounting bodies 50a to 50f, and each of the support plates 51 is provided with a rod shape along the longitudinal direction of the targets 41a to 41f. The center magnet 52 and the peripheral magnet 53 along the outer circumference of the support plate 51 are divided by the end portions of the targets 41a to 41f in the longitudinal direction by about 40 mm. Then, the divided portions 5b and 5c of the magnet mounting bodies 50a to 50f are opposed to the central portion by the position changing means, and moved to the outside of 15 mm.

The pressure in the sputtering chamber 11 of the vacuum exhaust gas was maintained at 0.67 Pa, and the mass flow controller 21 was controlled as a sputtering condition, and argon gas (ar flow rate: 200 sccm) of the sputtering gas and H of the reaction gas were controlled. ₂ O (H ₂ O flow rate 0.5 sccm) was introduced into the sputtering chamber 11. Further, the input power of each of the targets 41a to 41f was set to 60 kW, and the sputtering time was set to 15 seconds. Under these conditions, the film thickness in the plane of the glass substrate S at the time of reactive sputtering and the distribution of specific resistance values on the glass substrate S are shown in Fig. 7 (a) and (b).

(Comparative Example 1)

Although the sputtering apparatus 10 of Fig. 6 was used as Comparative Example 1, a splitter was used as the magnet mounting body. Then, the sputtering conditions were the same as in the above-described Example 1, and an ITO film was formed by reactive sputtering on the same glass substrate S as in Example 1. Under these conditions, the film thickness and the sheet resistance value (Ω/□) in the surface of the glass substrate S at the time of reactive sputtering on the glass substrate S are shown in the eighth (a) and (b). Figure.

Referring to FIGS. 7 and 8 , in Comparative Example 1, the film thickness along both sides in the longitudinal direction of the glass substrate ( ), the local thinning is compared with the central region, and the thin portion exceeding the range of ±10% causes the deviation distribution of the film thickness portion to become large. Further, in the case of the sheet-like resistance value, the locality is improved on the both sides along the longitudinal direction of the glass substrate as compared with the central region, and the distribution of the sheet-like resistance value is not good (±24%). That is, it causes unevenness in film quality.

On the other hand, in the first embodiment, the film thickness on both sides in the longitudinal direction of the glass substrate is substantially equal to the film thickness of the central portion, and the film thickness distribution in the surface of the processed substrate is maintained at ±5. The range of % is judged to improve the deviation distribution of the film thickness distribution. Further, for the sheet-like resistance value, the distribution of the sheet-like resistance value was about ±17%, and it was judged that the uniformity of the film quality was improved.

1. . . Magnetron sputtering device

41. . . Target

5. . . Cathode assembly

51. . . Support board

52. . . Central magnet

53. . . Peripheral magnet

54. . . Substrate

55. . . Spacer

B. . . Holder

C. . . Magnet mounting body

E. . . Eroded area

S. . . Processing substrate

W. . . Gasket

Fig. 1 is a view showing the sputtering apparatus of the present invention.

Fig. 2 is a cross-sectional view showing the division of the magnet assembly.

Fig. 3 is a cross-sectional view showing the division of the magnet mounting body.

Fig. 4 is a cross-sectional view showing a portion of the magnet mounting body of Fig. 2 enlarged.

Fig. 5 is a view showing a modification of the magnet assembly.

Fig. 6 is a view showing a modification of the sputtering apparatus of the present invention.

Fig. 7(a) is a view showing a film thickness distribution when a film thickness distribution is formed by forming an ITO film according to the present invention, and Fig. 7(b) is a view showing a distribution of sheet resistance values at this time.

Fig. 8(a) is a view showing a film thickness distribution when a film thickness distribution of an ITO film of a conventional magnet assembly is used, and Fig. 8(b) is a view for explaining a distribution of sheet resistance values at this time.

41. . . Target

5a. . . Central part

5b, 5c. . . Split part

51. . . Support board

52. . . Central magnet

54. . . Substrate

55. . . Spacer

E. . . Eroded area

Claims (5)

A magnetron sputtering electrode is provided with a target and a magnet mounting body disposed behind the target, and a central magnet and a peripheral magnet are disposed on a support plate on which a channel-shaped magnetic flux should be formed in front of the target. Further, the magnet mounting body is characterized in that: the divided central portion is opposed to the supporting plate including the center magnet and the peripheral magnet, and the divided central portion is fixed to the substrate and is opposed to the central portion. On the other hand, the position changing means is movably oriented in the front-back direction, the left-right direction, and the up-and-down direction, and the divided portion is attached to the substrate. The magnetron sputtering electrode according to claim 1, wherein the magnet mounting body is divided below the outer end portion of the processing substrate disposed opposite to the target. The magnetron sputtering electrode according to the first aspect of the patent application, wherein the number of divisions on both sides of the magnet mounting body is changed in accordance with the magnetic field strength of the central magnet and the peripheral magnet to be used. The magnetron sputtering electrode according to the first aspect of the invention, wherein the magnet mounting body is provided with a driving means for moving the magnetic flux in parallel with the target and moving in parallel. A sputtering apparatus characterized in that a specific interval is reserved, and a plurality of magnetron splashes of any one of claims 1 to 4 are set. The plated electrode is provided with a DC power source or an AC power source that applies a negative potential, a ground potential, or a positive potential to each target.