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TWI367581B - Circuit structure - Google Patents

Circuit structure

Info

Publication number
TWI367581B
TWI367581B TW097142642A TW97142642A TWI367581B TW I367581 B TWI367581 B TW I367581B TW 097142642 A TW097142642 A TW 097142642A TW 97142642 A TW97142642 A TW 97142642A TW I367581 B TWI367581 B TW I367581B
Authority
TW
Taiwan
Prior art keywords
circuit structure
circuit
Prior art date
Application number
TW097142642A
Other languages
English (en)
Other versions
TW201003987A (en
Inventor
Chen Hua Yu
Ding Yuan Chen
Original Assignee
Taiwan Semiconductor Mfg Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Taiwan Semiconductor Mfg Co Ltd filed Critical Taiwan Semiconductor Mfg Co Ltd
Publication of TW201003987A publication Critical patent/TW201003987A/zh
Application granted granted Critical
Publication of TWI367581B publication Critical patent/TWI367581B/zh

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H29/00—Integrated devices, or assemblies of multiple devices, comprising at least one light-emitting semiconductor element covered by group H10H20/00
    • H10H29/10—Integrated devices comprising at least one light-emitting semiconductor component covered by group H10H20/00
    • H10H29/14—Integrated devices comprising at least one light-emitting semiconductor component covered by group H10H20/00 comprising multiple light-emitting semiconductor components
    • H10H29/142—Two-dimensional arrangements, e.g. asymmetric LED layout
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F30/00—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors
    • H10F30/20—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors
    • H10F30/21—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation
    • H10F30/22—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices having only one potential barrier, e.g. photodiodes
    • H10F30/221—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices having only one potential barrier, e.g. photodiodes the potential barrier being a PN homojunction
    • H10F30/2215—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices having only one potential barrier, e.g. photodiodes the potential barrier being a PN homojunction the devices comprising active layers made of only Group III-V materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/10—Semiconductor bodies
    • H10F77/12—Active materials
    • H10F77/124—Active materials comprising only Group III-V materials, e.g. GaAs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H10H20/011—Manufacture or treatment of bodies, e.g. forming semiconductor layers
    • H10H20/013—Manufacture or treatment of bodies, e.g. forming semiconductor layers having light-emitting regions comprising only Group III-V materials
    • H10H20/0133—Manufacture or treatment of bodies, e.g. forming semiconductor layers having light-emitting regions comprising only Group III-V materials with a substrate not being Group III-V materials
    • H10H20/01335—Manufacture or treatment of bodies, e.g. forming semiconductor layers having light-emitting regions comprising only Group III-V materials with a substrate not being Group III-V materials the light-emitting regions comprising nitride materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/819—Bodies characterised by their shape, e.g. curved or truncated substrates
TW097142642A 2008-07-01 2008-11-05 Circuit structure TWI367581B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US12/166,034 US8134169B2 (en) 2008-07-01 2008-07-01 Patterned substrate for hetero-epitaxial growth of group-III nitride film

Publications (2)

Publication Number Publication Date
TW201003987A TW201003987A (en) 2010-01-16
TWI367581B true TWI367581B (en) 2012-07-01

Family

ID=41463724

Family Applications (1)

Application Number Title Priority Date Filing Date
TW097142642A TWI367581B (en) 2008-07-01 2008-11-05 Circuit structure

Country Status (3)

Country Link
US (2) US8134169B2 (zh)
CN (1) CN101621099B (zh)
TW (1) TWI367581B (zh)

Families Citing this family (20)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8237151B2 (en) * 2009-01-09 2012-08-07 Taiwan Semiconductor Manufacturing Company, Ltd. Diode-based devices and methods for making the same
US8134169B2 (en) 2008-07-01 2012-03-13 Taiwan Semiconductor Manufacturing Co., Ltd. Patterned substrate for hetero-epitaxial growth of group-III nitride film
EP2355138B1 (en) * 2010-01-28 2016-08-24 Canon Kabushiki Kaisha Liquid composition, method of producing silicon substrate, and method of producing liquid discharge head substrate
US8294163B2 (en) * 2010-02-01 2012-10-23 Hermes-Epitek Corp. Optoelectronic component with three-dimension quantum well structure and method for producing the same
TWI562195B (en) 2010-04-27 2016-12-11 Pilegrowth Tech S R L Dislocation and stress management by mask-less processes using substrate patterning and methods for device fabrication
JP5789782B2 (ja) * 2010-05-20 2015-10-07 パナソニックＩｐマネジメント株式会社 窒化物半導体発光素子および窒化物半導体発光素子の製造方法
TWI446578B (zh) * 2010-09-23 2014-07-21 Epistar Corp 發光元件及其製法
CN102130254B (zh) * 2010-09-29 2015-03-11 映瑞光电科技(上海)有限公司 发光装置及其制造方法
TW201218417A (en) * 2010-10-21 2012-05-01 Foxsemicon Integrated Tech Inc LED chip
US20120261686A1 (en) * 2011-04-12 2012-10-18 Lu Chi Wei Light-emitting element and the manufacturing method thereof
US20120298992A1 (en) * 2011-05-26 2012-11-29 Chin-Te Kuo Test layout structure
KR20140106590A (ko) 2011-11-21 2014-09-03 쌩-고벵 크리스톡스 에 드테끄퇴르 반도체 기판 및 형성 방법
WO2014209393A1 (en) * 2013-06-28 2014-12-31 Intel Corporation NANOSTRUCTURES AND NANOFEATURES WITH Si (111) PLANES ON Si (100) WAFERS FOR III-N EPITAXY
FR3023410A1 (fr) * 2014-07-02 2016-01-08 Aledia Dispositif optoelectronique a elements semiconducteurs et son procede de fabrication
JP7267882B2 (ja) * 2019-09-17 2023-05-02 キオクシア株式会社 基板、パターン、及び計測装置の較正方法
CN110838502B (zh) * 2019-10-28 2024-04-19 厦门乾照半导体科技有限公司 发光二极管芯片及制作和转移方法、显示装置及制作方法
US11355544B2 (en) * 2020-03-26 2022-06-07 Taiwan Semiconductor Manufacturing Co., Ltd. Image sensor with improved light conversion efficiency
CN113066908A (zh) * 2021-03-15 2021-07-02 广东中图半导体科技股份有限公司 一种图形互补复合衬底、制备方法及led外延片
CN113097350B (zh) * 2021-03-31 2022-07-22 湘能华磊光电股份有限公司 一种提高亮度的led外延片的制作方法
CN113097351B (zh) * 2021-03-31 2022-07-19 湘能华磊光电股份有限公司 一种led外延片的制作方法

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE69433926T2 (de) * 1993-04-28 2005-07-21 Nichia Corp., Anan Halbleitervorrichtung aus einer galliumnitridartigen III-V-Halbleiterverbindung
JP3592553B2 (ja) * 1998-10-15 2004-11-24 株式会社東芝 窒化ガリウム系半導体装置
DE60043122D1 (de) 1999-03-17 2009-11-19 Mitsubishi Chem Corp Halbleiterbasis ihre Herstellung und Halbleiterkristallhersetllungsmethode
US6531719B2 (en) * 1999-09-29 2003-03-11 Toyoda Gosei Co., Ltd. Group III nitride compound semiconductor device
WO2001043174A2 (en) 1999-12-13 2001-06-14 North Carolina State University Fabrication of gallium nitride layers on textured silicon substrates
JP3882539B2 (ja) * 2000-07-18 2007-02-21 ソニー株式会社 半導体発光素子およびその製造方法、並びに画像表示装置
JP3556916B2 (ja) 2000-09-18 2004-08-25 三菱電線工業株式会社 半導体基材の製造方法
KR100425343B1 (ko) * 2001-04-17 2004-03-30 삼성전기주식회사 반도체 기판 제조방법
GB2418532A (en) * 2004-09-28 2006-03-29 Arima Optoelectronic Textured light emitting diode structure with enhanced fill factor
US20070108459A1 (en) * 2005-04-15 2007-05-17 Enfocus Engineering Corp Methods of Manufacturing Light Emitting Devices
JP2007324581A (ja) * 2006-05-01 2007-12-13 Mitsubishi Chemicals Corp 集積型半導体発光装置およびその製造方法
US8134169B2 (en) 2008-07-01 2012-03-13 Taiwan Semiconductor Manufacturing Co., Ltd. Patterned substrate for hetero-epitaxial growth of group-III nitride film

Also Published As

Publication number Publication date
US8134169B2 (en) 2012-03-13
US20100001375A1 (en) 2010-01-07
US8435820B2 (en) 2013-05-07
TW201003987A (en) 2010-01-16
US20120171851A1 (en) 2012-07-05
CN101621099B (zh) 2013-01-16
CN101621099A (zh) 2010-01-06

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Legal Events

Date Code Title Description
MM4A Annulment or lapse of patent due to non-payment of fees