TWI367267B - Electrolytic stripping method - Google Patents
Electrolytic stripping methodInfo
- Publication number
- TWI367267B TWI367267B TW093132149A TW93132149A TWI367267B TW I367267 B TWI367267 B TW I367267B TW 093132149 A TW093132149 A TW 093132149A TW 93132149 A TW93132149 A TW 93132149A TW I367267 B TWI367267 B TW I367267B
- Authority
- TW
- Taiwan
- Prior art keywords
- stripping method
- electrolytic stripping
- electrolytic
- stripping
- Prior art date
Links
Classifications
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- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25F—PROCESSES FOR THE ELECTROLYTIC REMOVAL OF MATERIALS FROM OBJECTS; APPARATUS THEREFOR
- C25F5/00—Electrolytic stripping of metallic layers or coatings
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
- H01L23/495—Lead-frames or other flat leads
- H01L23/49579—Lead-frames or other flat leads characterised by the materials of the lead frames or layers thereon
- H01L23/49582—Metallic layers on lead frames
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
- H01L2224/45001—Core members of the connector
- H01L2224/45099—Material
- H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
- H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
- H01L2224/45144—Gold (Au) as principal constituent
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/485—Material
- H01L2224/48505—Material at the bonding interface
- H01L2224/48599—Principal constituent of the connecting portion of the wire connector being Gold (Au)
- H01L2224/486—Principal constituent of the connecting portion of the wire connector being Gold (Au) with a principal constituent of the bonding area being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
- H01L2224/48638—Principal constituent of the connecting portion of the wire connector being Gold (Au) with a principal constituent of the bonding area being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
- H01L2224/48639—Silver (Ag) as principal constituent
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
- H01L2224/8538—Bonding interfaces outside the semiconductor or solid-state body
- H01L2224/85399—Material
- H01L2224/854—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
- H01L2224/85438—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
- H01L2224/85439—Silver (Ag) as principal constituent
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/42—Wire connectors; Manufacturing methods related thereto
- H01L24/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L24/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/00014—Technical content checked by a classifier the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01012—Magnesium [Mg]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01019—Potassium [K]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01028—Nickel [Ni]
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Electrochemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Electrolytic Production Of Metals (AREA)
- Electroplating Methods And Accessories (AREA)
- Lead Frames For Integrated Circuits (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2003433701A JP4268515B2 (en) | 2003-12-26 | 2003-12-26 | Electrolytic peeling method |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| TW200521270A TW200521270A (en) | 2005-07-01 |
| TWI367267B true TWI367267B (en) | 2012-07-01 |
Family
ID=34697737
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW093132149A TWI367267B (en) | 2003-12-26 | 2004-10-22 | Electrolytic stripping method |
Country Status (5)
| Country | Link |
|---|---|
| US (1) | US20050139488A1 (en) |
| JP (1) | JP4268515B2 (en) |
| KR (1) | KR101124546B1 (en) |
| CN (1) | CN1637174B (en) |
| TW (1) | TWI367267B (en) |
Families Citing this family (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20080112988A1 (en) * | 2006-11-14 | 2008-05-15 | Ancient Stones, Inc. | Composition and method for cosmetic vitalization and stabilization |
| JP2011149037A (en) * | 2010-01-19 | 2011-08-04 | Mitsubishi Shindoh Co Ltd | Method for recycling scrap of copper or copper alloy plated with silver |
| US9382634B2 (en) * | 2012-02-29 | 2016-07-05 | Hitachi Metals, Ltd. | Method for preparing low-melting-point plating solution for aluminum electroplating, plating solution for aluminum electroplating, method for producing aluminum foil, and method for lowering melting point of plating solution for aluminum electroplating |
| EP3083016B1 (en) | 2013-12-20 | 2020-07-29 | Greene Lyon Group Inc. | Method and apparatus for recovery of noble metals, including recovery of noble metals from plated and/or filled scrap |
| JP6417586B2 (en) * | 2014-08-25 | 2018-11-07 | セイコーエプソン株式会社 | Modeling method and model |
| CN105506728B (en) * | 2014-09-29 | 2019-10-15 | 盛美半导体设备(上海)有限公司 | The device of precipitating metal ion from electrochemical polish liquid |
| EP3353332B1 (en) | 2015-06-24 | 2024-05-15 | Greene Lyon Group, Inc. | Selective removal of noble metals using acidic fluids, including fluids containing nitrate ions |
| CN105543948B (en) * | 2015-12-23 | 2017-10-31 | 苏州卓融新能源科技有限公司 | It is a kind of for PCB electroplate accompany plating plate/drag cylinder plate move back process for copper |
| CN111487267B (en) * | 2020-04-09 | 2023-04-14 | 哈尔滨工业大学 | A method for peeling off double-layer oxide film defects in aluminum bronze alloy |
| CN113652694A (en) * | 2021-06-24 | 2021-11-16 | 广东桐鸣环保科技有限公司 | Copper plating layer stripping liquid and stripping method |
| EP4403676A1 (en) * | 2023-01-19 | 2024-07-24 | Semsysco GmbH | Electro-etching method for an area-selective treatment of a substrate |
Family Cites Families (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US2596307A (en) * | 1947-11-05 | 1952-05-13 | Charles Litzenberg | Process of electrostripping electrodeposited metals |
| US3960675A (en) * | 1975-04-17 | 1976-06-01 | Motter Printing Press Co. | Method for deplating and replating rotogravure cylinders |
| US4264420A (en) * | 1979-10-29 | 1981-04-28 | Oxy Metal Industries Corporation | Electrolytic stripping bath and process |
| US4404074A (en) * | 1982-05-27 | 1983-09-13 | Occidental Chemical Corporation | Electrolytic stripping bath and process |
| JPS6056800B2 (en) | 1982-08-11 | 1985-12-11 | 新光電気工業株式会社 | Method for removing protruding parts of base copper plating in partial silver plating and method for finishing surface of silver plating |
| US4729940A (en) * | 1986-05-16 | 1988-03-08 | Cbs Inc. | Method of manufacturing master for optical information carrier |
| US7128825B2 (en) * | 2001-03-14 | 2006-10-31 | Applied Materials, Inc. | Method and composition for polishing a substrate |
| US6783690B2 (en) * | 2002-03-25 | 2004-08-31 | Donna M. Kologe | Method of stripping silver from a printed circuit board |
-
2003
- 2003-12-26 JP JP2003433701A patent/JP4268515B2/en not_active Expired - Fee Related
-
2004
- 2004-10-15 KR KR1020040082416A patent/KR101124546B1/en not_active Expired - Fee Related
- 2004-10-22 US US10/972,138 patent/US20050139488A1/en not_active Abandoned
- 2004-10-22 TW TW093132149A patent/TWI367267B/en not_active IP Right Cessation
- 2004-10-22 CN CN2004100860292A patent/CN1637174B/en not_active Expired - Fee Related
Also Published As
| Publication number | Publication date |
|---|---|
| JP4268515B2 (en) | 2009-05-27 |
| JP2005187920A (en) | 2005-07-14 |
| US20050139488A1 (en) | 2005-06-30 |
| CN1637174A (en) | 2005-07-13 |
| KR101124546B1 (en) | 2012-03-15 |
| TW200521270A (en) | 2005-07-01 |
| KR20050066981A (en) | 2005-06-30 |
| CN1637174B (en) | 2010-04-28 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| MM4A | Annulment or lapse of patent due to non-payment of fees |