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TWI367267B - Electrolytic stripping method - Google Patents

Electrolytic stripping method

Info

Publication number
TWI367267B
TWI367267B TW093132149A TW93132149A TWI367267B TW I367267 B TWI367267 B TW I367267B TW 093132149 A TW093132149 A TW 093132149A TW 93132149 A TW93132149 A TW 93132149A TW I367267 B TWI367267 B TW I367267B
Authority
TW
Taiwan
Prior art keywords
stripping method
electrolytic stripping
electrolytic
stripping
Prior art date
Application number
TW093132149A
Other languages
Chinese (zh)
Other versions
TW200521270A (en
Inventor
Ogihara Yoko
Nakazawa Masao
Original Assignee
Shinko Electric Ind Co
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Shinko Electric Ind Co filed Critical Shinko Electric Ind Co
Publication of TW200521270A publication Critical patent/TW200521270A/en
Application granted granted Critical
Publication of TWI367267B publication Critical patent/TWI367267B/en

Links

Classifications

    • CCHEMISTRY; METALLURGY
    • C25ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25FPROCESSES FOR THE ELECTROLYTIC REMOVAL OF MATERIALS FROM OBJECTS; APPARATUS THEREFOR
    • C25F5/00Electrolytic stripping of metallic layers or coatings
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00Details of semiconductor or other solid state devices
    • H01L23/48Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/488Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
    • H01L23/495Lead-frames or other flat leads
    • H01L23/49579Lead-frames or other flat leads characterised by the materials of the lead frames or layers thereon
    • H01L23/49582Metallic layers on lead frames
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/44Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001Core members of the connector
    • H01L2224/45099Material
    • H01L2224/451Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45138Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/45144Gold (Au) as principal constituent
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/485Material
    • H01L2224/48505Material at the bonding interface
    • H01L2224/48599Principal constituent of the connecting portion of the wire connector being Gold (Au)
    • H01L2224/486Principal constituent of the connecting portion of the wire connector being Gold (Au) with a principal constituent of the bonding area being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/48638Principal constituent of the connecting portion of the wire connector being Gold (Au) with a principal constituent of the bonding area being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/48639Silver (Ag) as principal constituent
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/85Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
    • H01L2224/8538Bonding interfaces outside the semiconductor or solid-state body
    • H01L2224/85399Material
    • H01L2224/854Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/85438Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/85439Silver (Ag) as principal constituent
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/42Wire connectors; Manufacturing methods related thereto
    • H01L24/44Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L24/45Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001Technical content checked by a classifier
    • H01L2924/00014Technical content checked by a classifier the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01Chemical elements
    • H01L2924/01012Magnesium [Mg]
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01Chemical elements
    • H01L2924/01019Potassium [K]
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01Chemical elements
    • H01L2924/01028Nickel [Ni]

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Electrochemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Electrolytic Production Of Metals (AREA)
  • Electroplating Methods And Accessories (AREA)
  • Lead Frames For Integrated Circuits (AREA)
TW093132149A 2003-12-26 2004-10-22 Electrolytic stripping method TWI367267B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2003433701A JP4268515B2 (en) 2003-12-26 2003-12-26 Electrolytic peeling method

Publications (2)

Publication Number Publication Date
TW200521270A TW200521270A (en) 2005-07-01
TWI367267B true TWI367267B (en) 2012-07-01

Family

ID=34697737

Family Applications (1)

Application Number Title Priority Date Filing Date
TW093132149A TWI367267B (en) 2003-12-26 2004-10-22 Electrolytic stripping method

Country Status (5)

Country Link
US (1) US20050139488A1 (en)
JP (1) JP4268515B2 (en)
KR (1) KR101124546B1 (en)
CN (1) CN1637174B (en)
TW (1) TWI367267B (en)

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20080112988A1 (en) * 2006-11-14 2008-05-15 Ancient Stones, Inc. Composition and method for cosmetic vitalization and stabilization
JP2011149037A (en) * 2010-01-19 2011-08-04 Mitsubishi Shindoh Co Ltd Method for recycling scrap of copper or copper alloy plated with silver
US9382634B2 (en) * 2012-02-29 2016-07-05 Hitachi Metals, Ltd. Method for preparing low-melting-point plating solution for aluminum electroplating, plating solution for aluminum electroplating, method for producing aluminum foil, and method for lowering melting point of plating solution for aluminum electroplating
EP3083016B1 (en) 2013-12-20 2020-07-29 Greene Lyon Group Inc. Method and apparatus for recovery of noble metals, including recovery of noble metals from plated and/or filled scrap
JP6417586B2 (en) * 2014-08-25 2018-11-07 セイコーエプソン株式会社 Modeling method and model
CN105506728B (en) * 2014-09-29 2019-10-15 盛美半导体设备(上海)有限公司 The device of precipitating metal ion from electrochemical polish liquid
EP3353332B1 (en) 2015-06-24 2024-05-15 Greene Lyon Group, Inc. Selective removal of noble metals using acidic fluids, including fluids containing nitrate ions
CN105543948B (en) * 2015-12-23 2017-10-31 苏州卓融新能源科技有限公司 It is a kind of for PCB electroplate accompany plating plate/drag cylinder plate move back process for copper
CN111487267B (en) * 2020-04-09 2023-04-14 哈尔滨工业大学 A method for peeling off double-layer oxide film defects in aluminum bronze alloy
CN113652694A (en) * 2021-06-24 2021-11-16 广东桐鸣环保科技有限公司 Copper plating layer stripping liquid and stripping method
EP4403676A1 (en) * 2023-01-19 2024-07-24 Semsysco GmbH Electro-etching method for an area-selective treatment of a substrate

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2596307A (en) * 1947-11-05 1952-05-13 Charles Litzenberg Process of electrostripping electrodeposited metals
US3960675A (en) * 1975-04-17 1976-06-01 Motter Printing Press Co. Method for deplating and replating rotogravure cylinders
US4264420A (en) * 1979-10-29 1981-04-28 Oxy Metal Industries Corporation Electrolytic stripping bath and process
US4404074A (en) * 1982-05-27 1983-09-13 Occidental Chemical Corporation Electrolytic stripping bath and process
JPS6056800B2 (en) 1982-08-11 1985-12-11 新光電気工業株式会社 Method for removing protruding parts of base copper plating in partial silver plating and method for finishing surface of silver plating
US4729940A (en) * 1986-05-16 1988-03-08 Cbs Inc. Method of manufacturing master for optical information carrier
US7128825B2 (en) * 2001-03-14 2006-10-31 Applied Materials, Inc. Method and composition for polishing a substrate
US6783690B2 (en) * 2002-03-25 2004-08-31 Donna M. Kologe Method of stripping silver from a printed circuit board

Also Published As

Publication number Publication date
JP4268515B2 (en) 2009-05-27
JP2005187920A (en) 2005-07-14
US20050139488A1 (en) 2005-06-30
CN1637174A (en) 2005-07-13
KR101124546B1 (en) 2012-03-15
TW200521270A (en) 2005-07-01
KR20050066981A (en) 2005-06-30
CN1637174B (en) 2010-04-28

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Legal Events

Date Code Title Description
MM4A Annulment or lapse of patent due to non-payment of fees