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TWI366929B - Magnetic memory structure and operation method - Google Patents

Magnetic memory structure and operation method

Info

Publication number
TWI366929B
TWI366929B TW098135459A TW98135459A TWI366929B TW I366929 B TWI366929 B TW I366929B TW 098135459 A TW098135459 A TW 098135459A TW 98135459 A TW98135459 A TW 98135459A TW I366929 B TWI366929 B TW I366929B
Authority
TW
Taiwan
Prior art keywords
operation method
magnetic memory
memory structure
magnetic
memory
Prior art date
Application number
TW098135459A
Other languages
English (en)
Other versions
TW201115801A (en
Inventor
Ching Hsiang Tsai
Kuei Hung Shen
Chien Chung Hung
Original Assignee
Ind Tech Res Inst
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Ind Tech Res Inst filed Critical Ind Tech Res Inst
Priority to TW098135459A priority Critical patent/TWI366929B/zh
Priority to US12/690,093 priority patent/US8130531B2/en
Publication of TW201115801A publication Critical patent/TW201115801A/zh
Application granted granted Critical
Publication of TWI366929B publication Critical patent/TWI366929B/zh

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C19/00—Digital stores in which the information is moved stepwise, e.g. shift registers
    • G11C19/02—Digital stores in which the information is moved stepwise, e.g. shift registers using magnetic elements
    • G11C19/08—Digital stores in which the information is moved stepwise, e.g. shift registers using magnetic elements using thin films in plane structure
    • G11C19/0808—Digital stores in which the information is moved stepwise, e.g. shift registers using magnetic elements using thin films in plane structure using magnetic domain propagation
    • G11C19/0841—Digital stores in which the information is moved stepwise, e.g. shift registers using magnetic elements using thin films in plane structure using magnetic domain propagation using electric current
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
    • G11C11/14—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using thin-film elements

Landscapes

  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Mram Or Spin Memory Techniques (AREA)
  • Hall/Mr Elements (AREA)
TW098135459A 2009-10-20 2009-10-20 Magnetic memory structure and operation method TWI366929B (en)

Priority Applications (2)

Application Number Priority Date Filing Date Title
TW098135459A TWI366929B (en) 2009-10-20 2009-10-20 Magnetic memory structure and operation method
US12/690,093 US8130531B2 (en) 2009-10-20 2010-01-19 Magnetic memory structure and operation method

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
TW098135459A TWI366929B (en) 2009-10-20 2009-10-20 Magnetic memory structure and operation method

Publications (2)

Publication Number Publication Date
TW201115801A TW201115801A (en) 2011-05-01
TWI366929B true TWI366929B (en) 2012-06-21

Family

ID=43879184

Family Applications (1)

Application Number Title Priority Date Filing Date
TW098135459A TWI366929B (en) 2009-10-20 2009-10-20 Magnetic memory structure and operation method

Country Status (2)

Country Link
US (1) US8130531B2 (zh)
TW (1) TWI366929B (zh)

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20110186946A1 (en) * 2010-02-04 2011-08-04 Qualcomm Incorporated Magnetic Tunnel Junction with Domain Wall Pinning
JP5615310B2 (ja) * 2012-03-16 2014-10-29 株式会社東芝 磁気メモリ
US9048410B2 (en) 2013-05-31 2015-06-02 Micron Technology, Inc. Memory devices comprising magnetic tracks individually comprising a plurality of magnetic domains having domain walls and methods of forming a memory device comprising magnetic tracks individually comprising a plurality of magnetic domains having domain walls
JP6204769B2 (ja) 2013-09-18 2017-09-27 東芝メモリ株式会社 磁気記憶装置及びその駆動方法
US10026431B2 (en) 2013-11-01 2018-07-17 Carnegie Mellon University Magnetic shift register
WO2015112214A2 (en) * 2013-11-01 2015-07-30 Carnegie Mellon University Magnetic shift register
CN105096963B (zh) 2014-04-25 2018-06-26 华为技术有限公司 写装置及磁性存储器
US9583212B2 (en) * 2014-08-22 2017-02-28 International Business Machines Corporation Domain wall injector device using fringing fields aided by spin transfer torque
JP2018157019A (ja) 2017-03-16 2018-10-04 東芝メモリ株式会社 磁気記憶装置
JP2019057545A (ja) * 2017-09-19 2019-04-11 東芝メモリ株式会社 磁気記憶装置

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6834005B1 (en) * 2003-06-10 2004-12-21 International Business Machines Corporation Shiftable magnetic shift register and method of using the same
US6898132B2 (en) 2003-06-10 2005-05-24 International Business Machines Corporation System and method for writing to a magnetic shift register
US6955926B2 (en) * 2004-02-25 2005-10-18 International Business Machines Corporation Method of fabricating data tracks for use in a magnetic shift register memory device
US7236386B2 (en) * 2004-12-04 2007-06-26 International Business Machines Corporation System and method for transferring data to and from a magnetic shift register with a shiftable data column
US7710769B2 (en) * 2007-05-09 2010-05-04 Ingenia Holdings Uk Limited Data storage device and method
KR101288477B1 (ko) 2007-08-10 2013-07-26 삼성전자주식회사 자구벽 이동을 이용한 정보 저장 장치

Also Published As

Publication number Publication date
TW201115801A (en) 2011-05-01
US8130531B2 (en) 2012-03-06
US20110090730A1 (en) 2011-04-21

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Legal Events

Date Code Title Description
MM4A Annulment or lapse of patent due to non-payment of fees