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TWI366216B - Semiconductor structure processing using multiple laser beam spots - Google Patents

Semiconductor structure processing using multiple laser beam spots

Info

Publication number
TWI366216B
TWI366216B TW094120172A TW94120172A TWI366216B TW I366216 B TWI366216 B TW I366216B TW 094120172 A TW094120172 A TW 094120172A TW 94120172 A TW94120172 A TW 94120172A TW I366216 B TWI366216 B TW I366216B
Authority
TW
Taiwan
Prior art keywords
laser beam
semiconductor structure
multiple laser
beam spots
structure processing
Prior art date
Application number
TW094120172A
Other languages
Chinese (zh)
Other versions
TW200603235A (en
Inventor
Kelly J Bruland
Ho Wai Lo
Brian W Baird
Frank G Evans
Richard S Harris
Yunlong Sun
Stephen N Swaringen
Original Assignee
Electro Scient Ind Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from US11/051,265 external-priority patent/US7435927B2/en
Priority claimed from US11/051,263 external-priority patent/US7935941B2/en
Priority claimed from US11/052,000 external-priority patent/US7923306B2/en
Priority claimed from US11/051,262 external-priority patent/US7687740B2/en
Priority claimed from US11/051,500 external-priority patent/US8148211B2/en
Priority claimed from US11/051,261 external-priority patent/US7633034B2/en
Priority claimed from US11/052,014 external-priority patent/US7629234B2/en
Application filed by Electro Scient Ind Inc filed Critical Electro Scient Ind Inc
Publication of TW200603235A publication Critical patent/TW200603235A/en
Application granted granted Critical
Publication of TWI366216B publication Critical patent/TWI366216B/en

Links

TW094120172A 2004-06-18 2005-06-17 Semiconductor structure processing using multiple laser beam spots TWI366216B (en)

Applications Claiming Priority (9)

Application Number Priority Date Filing Date Title
US58091704P 2004-06-18 2004-06-18
US11/051,265 US7435927B2 (en) 2004-06-18 2005-02-04 Semiconductor link processing using multiple laterally spaced laser beam spots with on-axis offset
US11/051,263 US7935941B2 (en) 2004-06-18 2005-02-04 Semiconductor structure processing using multiple laser beam spots spaced on-axis on non-adjacent structures
US11/052,000 US7923306B2 (en) 2004-06-18 2005-02-04 Semiconductor structure processing using multiple laser beam spots
US11/051,262 US7687740B2 (en) 2004-06-18 2005-02-04 Semiconductor structure processing using multiple laterally spaced laser beam spots delivering multiple blows
US11/051,500 US8148211B2 (en) 2004-06-18 2005-02-04 Semiconductor structure processing using multiple laser beam spots spaced on-axis delivered simultaneously
US11/051,261 US7633034B2 (en) 2004-06-18 2005-02-04 Semiconductor structure processing using multiple laser beam spots overlapping lengthwise on a structure
US11/052,014 US7629234B2 (en) 2004-06-18 2005-02-04 Semiconductor structure processing using multiple laterally spaced laser beam spots with joint velocity profiling
US11/051,958 US7425471B2 (en) 2004-06-18 2005-02-04 Semiconductor structure processing using multiple laser beam spots spaced on-axis with cross-axis offset

Publications (2)

Publication Number Publication Date
TW200603235A TW200603235A (en) 2006-01-16
TWI366216B true TWI366216B (en) 2012-06-11

Family

ID=46675739

Family Applications (1)

Application Number Title Priority Date Filing Date
TW094120172A TWI366216B (en) 2004-06-18 2005-06-17 Semiconductor structure processing using multiple laser beam spots

Country Status (2)

Country Link
JP (1) JP2012138597A (en)
TW (1) TWI366216B (en)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI447955B (en) * 2011-11-23 2014-08-01 Ind Tech Res Inst Light-emitting diode element, method and device for forming light-guiding structure thereof
TWI661265B (en) 2014-03-10 2019-06-01 美商Ｄ２Ｓ公司 Method for forming a pattern on a surface using multi-beam charged particle beam lithography
US11264206B2 (en) 2014-03-10 2022-03-01 D2S, Inc. Methods and systems for forming a pattern on a surface using multi-beam charged particle beam lithography
CN111992545B (en) * 2020-08-28 2023-09-08 格力电器（武汉）有限公司 Cleaning device and cleaning method for lower circular seam oxide skin of water heater liner
CN115041814B (en) * 2021-02-26 2024-11-12 深圳市大族半导体装备科技有限公司 Laser processing device and processing method for brittle material
CN113843499B (en) * 2021-09-10 2024-11-29 海目星激光科技集团股份有限公司 Laser film opening method and device
CN115939011B (en) * 2023-03-09 2023-07-21 长鑫存储技术有限公司 Auxiliary calibration device, semiconductor conveying system and calibration method thereof
CN119687986B (en) * 2024-12-19 2025-09-30 北京环境特性研究所 A photoelectric detection device calibration system and method based on fast reflector

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH02137682A (en) * 1988-11-16 1990-05-25 Nec Kyushu Ltd Laser repair device for semiconductor integrated circuit
JP3299627B2 (en) * 1994-04-22 2002-07-08 ローム株式会社 Method for cutting fuse structure and apparatus for cutting fuse structure
TW279229B (en) * 1994-12-29 1996-06-21 Siemens Ag Double density fuse bank for the laser break-link programming of an integrated-circuit
JP3353520B2 (en) * 1995-02-27 2002-12-03 ソニー株式会社 Semiconductor device
JPH10328873A (en) * 1997-06-04 1998-12-15 Nikon Corp Laser processing equipment
JPH11245073A (en) * 1998-03-04 1999-09-14 Nikon Corp Laser processing equipment
AU2001271982A1 (en) * 2000-07-12 2002-01-21 Electro Scientific Industries, Inc. Uv laser system and method for single pulse severing of ic fuses
JP4202077B2 (en) * 2002-09-11 2008-12-24 パナソニック株式会社 Fuse cutting method

Also Published As

Publication number Publication date
JP2012138597A (en) 2012-07-19
TW200603235A (en) 2006-01-16

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Legal Events

Date Code Title Description
MM4A Annulment or lapse of patent due to non-payment of fees