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TWI366290B - Light emitting diode having alingap active layer and method of fabricating the same - Google Patents

Light emitting diode having alingap active layer and method of fabricating the same

Info

Publication number
TWI366290B
TWI366290B TW100126009A TW100126009A TWI366290B TW I366290 B TWI366290 B TW I366290B TW 100126009 A TW100126009 A TW 100126009A TW 100126009 A TW100126009 A TW 100126009A TW I366290 B TWI366290 B TW I366290B
Authority
TW
Taiwan
Prior art keywords
fabricating
light emitting
emitting diode
same
active layer
Prior art date
Application number
TW100126009A
Other languages
English (en)
Other versions
TW201203597A (en
Inventor
Chung-Hoon Lee
Jae-Ho Lee
Mi-Hae Kim
Original Assignee
Seoul Opto Device Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from KR1020060092828A external-priority patent/KR101272703B1/ko
Priority claimed from KR1020060094243A external-priority patent/KR101272704B1/ko
Application filed by Seoul Opto Device Co Ltd filed Critical Seoul Opto Device Co Ltd
Publication of TW201203597A publication Critical patent/TW201203597A/zh
Application granted granted Critical
Publication of TWI366290B publication Critical patent/TWI366290B/zh

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H29/00—Integrated devices, or assemblies of multiple devices, comprising at least one light-emitting semiconductor element covered by group H10H20/00
    • H10H29/10—Integrated devices comprising at least one light-emitting semiconductor component covered by group H10H20/00
    • H10H29/14—Integrated devices comprising at least one light-emitting semiconductor component covered by group H10H20/00 comprising multiple light-emitting semiconductor components
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00—Assemblies consisting of a plurality of semiconductor or other solid state devices
    • H01L25/03—Assemblies consisting of a plurality of semiconductor or other solid state devices all the devices being of a type provided for in a single subclass of subclasses H10B, H10D, H10F, H10H, H10K or H10N, e.g. assemblies of rectifier diodes
    • H01L25/04—Assemblies consisting of a plurality of semiconductor or other solid state devices all the devices being of a type provided for in a single subclass of subclasses H10B, H10D, H10F, H10H, H10K or H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
    • H01L25/075—Assemblies consisting of a plurality of semiconductor or other solid state devices all the devices being of a type provided for in a single subclass of subclasses H10B, H10D, H10F, H10H, H10K or H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H10H20/00
    • H01L25/0753—Assemblies consisting of a plurality of semiconductor or other solid state devices all the devices being of a type provided for in a single subclass of subclasses H10B, H10D, H10F, H10H, H10K or H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H10H20/00 the devices being arranged next to each other
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48135—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip
    • H01L2224/48137—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip the bodies being arranged next to each other, e.g. on a common substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/49—Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
    • H01L2224/491—Disposition
    • H01L2224/49105—Connecting at different heights
    • H01L2224/49107—Connecting at different heights on the semiconductor or solid-state body
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/857—Interconnections, e.g. lead-frames, bond wires or solder balls

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Led Devices (AREA)
TW100126009A 2006-09-25 2007-09-19 Light emitting diode having alingap active layer and method of fabricating the same TWI366290B (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
KR1020060092828A KR101272703B1 (ko) 2006-09-25 2006-09-25 ＡｌＧａＩｎＰ 활성층을 갖는 발광 다이오드
KR1020060094243A KR101272704B1 (ko) 2006-09-27 2006-09-27 ＡｌＩｎＧａＰ 활성층을 갖는 발광 다이오드 및 그것을제조하는 방법

Publications (2)

Publication Number Publication Date
TW201203597A TW201203597A (en) 2012-01-16
TWI366290B true TWI366290B (en) 2012-06-11

Family

ID=39230316

Family Applications (2)

Application Number Title Priority Date Filing Date
TW096134849A TWI377700B (en) 2006-09-25 2007-09-19 Light emitting diode having a1ingap active layer and method of fabricating the same
TW100126009A TWI366290B (en) 2006-09-25 2007-09-19 Light emitting diode having alingap active layer and method of fabricating the same

Family Applications Before (1)

Application Number Title Priority Date Filing Date
TW096134849A TWI377700B (en) 2006-09-25 2007-09-19 Light emitting diode having a1ingap active layer and method of fabricating the same

Country Status (3)

Country Link
US (1) US8350279B2 (zh)
TW (2) TWI377700B (zh)
WO (1) WO2008038910A1 (zh)

Families Citing this family (27)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100889956B1 (ko) * 2007-09-27 2009-03-20 서울옵토디바이스주식회사 교류용 발광다이오드
US8461613B2 (en) 2008-05-27 2013-06-11 Interlight Optotech Corporation Light emitting device
US7939839B2 (en) 2008-09-11 2011-05-10 Bridgelux, Inc. Series connected segmented LED
DE102008049188A1 (de) * 2008-09-26 2010-04-01 Osram Opto Semiconductors Gmbh Optoelektronisches Modul mit einem Trägersubstrat und einer Mehrzahl von strahlungsemittierenden Halbleiterbauelementen und Verfahren zu dessen Herstellung
US7868347B2 (en) * 2009-03-15 2011-01-11 Sky Advanced LED Technologies Inc Metal core multi-LED SMD package and method of producing the same
JP4661971B2 (ja) * 2009-05-27 2011-03-30 住友化学株式会社 発光装置
FR2975532B1 (fr) * 2011-05-18 2013-05-10 Commissariat Energie Atomique Connexion electrique en serie de nanofils emetteurs de lumiere
US9070851B2 (en) 2010-09-24 2015-06-30 Seoul Semiconductor Co., Ltd. Wafer-level light emitting diode package and method of fabricating the same
US8653542B2 (en) * 2011-01-13 2014-02-18 Tsmc Solid State Lighting Ltd. Micro-interconnects for light-emitting diodes
US8241932B1 (en) * 2011-03-17 2012-08-14 Tsmc Solid State Lighting Ltd. Methods of fabricating light emitting diode packages
US20120261686A1 (en) * 2011-04-12 2012-10-18 Lu Chi Wei Light-emitting element and the manufacturing method thereof
KR101303168B1 (ko) * 2011-07-26 2013-09-09 안상정 반도체 발광부 연결체
CN102509731B (zh) * 2011-12-28 2013-09-11 厦门市三安光电科技有限公司 交流式垂直发光元件及其制作方法
TWI509786B (zh) * 2012-02-17 2015-11-21 晶元光電股份有限公司 發光二極體元件
JP5939055B2 (ja) * 2012-06-28 2016-06-22 住友電気工業株式会社 半導体装置及び半導体装置の製造方法
JP5991065B2 (ja) * 2012-07-31 2016-09-14 日亜化学工業株式会社 発光装置
JP2014038989A (ja) * 2012-08-20 2014-02-27 Toshiba Corp 半導体発光装置および照明装置
US9356212B2 (en) 2012-12-21 2016-05-31 Seoul Viosys Co., Ltd. Light emitting diode and method of fabricating the same
CN104885236B (zh) 2012-12-21 2017-12-19 首尔伟傲世有限公司 发光二极管
DE102014011893B4 (de) * 2013-08-16 2020-10-01 Seoul Viosys Co., Ltd. Leuchtdiode
JP6508977B2 (ja) * 2015-02-27 2019-05-08 株式会社沖データ 半導体装置、ｌｅｄヘッド、及び画像形成装置
KR102357188B1 (ko) * 2015-07-21 2022-01-28 쑤저우 레킨 세미컨덕터 컴퍼니 리미티드 발광 소자
CN205944139U (zh) 2016-03-30 2017-02-08 首尔伟傲世有限公司 紫外线发光二极管封装件以及包含此的发光二极管模块
WO2018174434A1 (ko) 2017-03-23 2018-09-27 서울반도체주식회사 디스플레이 장치 및 그의 제조 방법
CN108550666A (zh) * 2018-05-02 2018-09-18 天津三安光电有限公司 倒装四元系发光二极管外延结构、倒装四元系发光二极管及其生长方法
US11450795B2 (en) * 2019-05-31 2022-09-20 Nichia Corporation Light-emitting module and surface-emitting light source including a plurality of wiring formations between two terminals
CN110957404A (zh) * 2019-12-17 2020-04-03 佛山市国星半导体技术有限公司 一种高压led芯片及其制作方法

Family Cites Families (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5008718A (en) 1989-12-18 1991-04-16 Fletcher Robert M Light-emitting diode with an electrically conductive window
US5233204A (en) 1992-01-10 1993-08-03 Hewlett-Packard Company Light-emitting diode with a thick transparent layer
US5376580A (en) 1993-03-19 1994-12-27 Hewlett-Packard Company Wafer bonding of light emitting diode layers
US5936599A (en) * 1995-01-27 1999-08-10 Reymond; Welles AC powered light emitting diode array circuits for use in traffic signal displays
US20040201988A1 (en) * 1999-02-12 2004-10-14 Fiber Optic Designs, Inc. LED light string and arrays with improved harmonics and optimized power utilization
US20040046510A1 (en) * 1998-08-28 2004-03-11 Fiber Optic Designs, Inc Direct AC driven LED light string
US6420732B1 (en) * 2000-06-26 2002-07-16 Luxnet Corporation Light emitting diode of improved current blocking and light extraction structure
JP4195041B2 (ja) 2002-04-12 2008-12-10 ソウル セミコンダクター カンパニー リミテッド 発光装置
US7009199B2 (en) * 2002-10-22 2006-03-07 Cree, Inc. Electronic devices having a header and antiparallel connected light emitting diodes for producing light from AC current
WO2004070851A1 (en) 2003-02-10 2004-08-19 Showa Denko K.K. Light-emitting diode device and production method thereof
TWI223460B (en) * 2003-09-23 2004-11-01 United Epitaxy Co Ltd Light emitting diodes in series connection and method of making the same
TWI352103B (en) 2003-12-10 2011-11-11 Clariant Finance Bvi Ltd Disperse dyes
TWI234297B (en) 2004-04-29 2005-06-11 United Epitaxy Co Ltd Light emitting diode and method of the same
KR101216938B1 (ko) 2004-10-28 2012-12-31 서울반도체 주식회사 다수의 셀이 결합된 발광 소자 및 이의 제조 방법 및 이를이용한 발광 장치
US7535028B2 (en) * 2005-02-03 2009-05-19 Ac Led Lighting, L.Lc. Micro-LED based high voltage AC/DC indicator lamp
WO2006083065A1 (en) 2005-02-04 2006-08-10 Seoul Opto Device Co., Ltd. Light emitting device having a plurality of light emitting cells and method of fabricating the same
EP1864339A4 (en) 2005-03-11 2010-12-29 Seoul Semiconductor Co Ltd LED CAPSULATION WITH A GROUP IN A SERIES OF SWITCHED LUMINAIRES
KR20060100638A (ko) 2005-03-17 2006-09-21 주식회사 비첼 발광 다이오드 장치 제조 방법

Also Published As

Publication number Publication date
TW200818558A (en) 2008-04-16
TW201203597A (en) 2012-01-16
TWI377700B (en) 2012-11-21
US20090272991A1 (en) 2009-11-05
WO2008038910A1 (en) 2008-04-03
US8350279B2 (en) 2013-01-08

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Legal Events

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MM4A Annulment or lapse of patent due to non-payment of fees