TWI362906B - Molded interconnect device and fabrication method thereof - Google Patents

Description

1362906 VI. Description of the Invention: [Technical Field of the Invention] The present invention relates to a method for forming a fine line on a plastic surface, and more particularly to a method for forming a device (mQlded interc_eet11, 娜) . , ® [Prior Art] As is known to those skilled in the art, a molded interconnect device (mIDldedime_neet device, MID) is attached to a plastic part after plastic injection molding to produce a metal wire having three-dimensional wiring. Technology, which integrates the functions of machinery and electronics, is applied to the mobile phone's hidden antenna, camera module, led module and the automotive industry. At present, it is known that there is a fine-grained touch-up strueturing JDS) _ Φ embedded fine wire or molded interconnect device 'which is molded into a predetermined body structure by using a special laser-activated plastic or so-called LDS surface. Then, using a laser of a specific wavelength, the metal catalyst incorporated into the plastic is activated, and a wire pattern is defined, and finally a metallization process is performed. For example, U.S. Published Patent Application Xiao Shipu 7822 proposes a similar method of directly forming a circuit by laser, which irradiates the surface of the burn-in board with a laser by using a substrate mixed with nitrided particles. In addition to defining the patterned grooves 1362906 of the conductive traces, the laser activates the particles of aluminum nitride. When nitrogen is removed from the surface of the substrate, activated aluminum atoms are left in the patterned grooves. Then, by electroless plating, chemical plating can be performed at the place where activated aluminum atoms are formed to form a circuit structure. However, current laser direct structuring techniques usually use special LDS plastics and use IR lasers of a specific wavelength, and for different materials f (10) (four), it is necessary to mix the characteristics of plastic materials to dope with different compositions and concentrations of metal catalysts. The conditions for the laser activation of each plastic are different. It is necessary to respond to different laser parameters and metallization parameters. Therefore, it is necessary to purchase laser equipment of a specific wavelength and set up the metal equipment of different conditions. The equipment and process cost are low, and the yield is low, which makes the market two expand. In addition, the H-beam direct molding technology (4)--the disadvantage is that the plastic cost is caused by the injection molding of the LDS plastic with a special mixed metal catalyst. Influencing the physical properties of the raw materials, the scope of its application is made. [Summary of the invention] The second ===: _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ The direct structure of the body structure lightly contains at least a touch-contact, a hetero-line layer, a catalyst activation, and a _-wire _, 2 directly into a secondary 仃-metallization process in the line layer, For example, a method of depositing or electroplating a metal such as copper, nickel, gold, silver, tin, palladium, zinc, chromium, etc., directly forms a conductive line on the surface of the body structure. According to a preferred embodiment of the present invention The present invention provides a molded interconnect device comprising: a body structure; a direct line layer covering the surface of the body structure; and a wire pattern disposed in the direct wire layer. It is selected from one of the following materials: dielectric materials, ceramics, metals, and glass, wherein the dielectric material includes a polymer compound such as an epoxy resin, a modified epoxy resin, a polyester, and an acrylic resin. Ester, fluoro-polymer, p〇iyphenyiene oxide, polyimide, phenolic resin, polychlorite

(polysulfone), silicone p〇iymer, bsaleimide triazine modified epoxy, cyanate ester, polyethylene, polycarbonate resin (p〇lyCarb〇nate, PC), acrylonitrile-butadiene-styrene copolymer (ABS copolymer), polyethylene terephthalate (PET), ruthenium, poly(p-phenylene terephthalate) Polybutylene terephthalate (PBT) resin, liquid crystal polymer (LCP), polyamide 6, PA 6 , nylon (^1〇11), copolymerized polydecanoic acid (卩〇) 1乂〇\丫11^115^116,?〇]\4), polyphenylene sulfide (PPS), cyclic olefin copolymer (COC), etc., or a group thereof group. The above described objects, features, and advantages of the present invention will become more apparent from the following description. However, the following descriptions of the preferred embodiments and the drawings are for the purpose of illustration and description, and are not intended to limit the invention. [Embodiment] >Month> Referring to Figures 1 to 4, there is shown a schematic view of a method of fabricating a molding apparatus according to the present invention. First, as shown in Fig. 1, a body, '' is provided. The structure may be a three-dimensional structure or a two-dimensional plate structure. The body structure 10 can be selected from one of the following materials: dielectric materials, ceramics, metals, glass, or other suitable materials. In an embodiment of the invention, the dielectric material described above comprises a high molecular polymer. If the body structure 10 is composed of a dielectric material or a plastic, a two-dimensional structure can be formed by injection molding. The body structure 1Q can be a mixture of shouting and shouting, and is formed by a mold molding technique. If the body structure 10 is a ceramic body, it can be molded by using a mold. The material of the body includes, for example, an oxide oxide, an oxide or an alumina to which chromium carbide is added. In the embodiment of the present invention, the above polymer is selected from the group consisting of epoxy resins, modified epoxy resins, polyesters, acrylates, and fluoropolymers («〇-1). )〇1}^ kiss, polyphenylene oxide (1)〇1_ which 1 coffee), polyimide (^)^^^^^(phenolicresin) > ^^(polysulfone) &gt (silicone polymer), BT resin (bismaldmide triazine modifled 1362906 epoxy), cyanate ester, polyethylene, polyethylene carbonate (PC), propylene-butadiene- Acrylonitrile-butadiene-styrene copolymer (ABS copolymer), polyethylene terephthalate (PET) resin, polybutylene terephthalate (PBT) resin, liquid crystal Liquid crystal polymers (LPP), polyamide 6, PA 6 , nylon (Nylon), polyoxymethylene (POM), polyphenylene sulfide (PPS) and ring A group consisting of cyclic olefin copolymers (COCs). According to a preferred embodiment of the present invention, if the body structure 10 is made of a dielectric material or plastic, then no metal or catalyst component is contained therein. As shown in FIG. 2, a direct direct current (DC) layer 12' is then applied over the surface of all or part of the body structure 10 by a laser activatable material doped with catalyst particles. Composition. In accordance with a preferred embodiment of the present invention, the thickness of the direct line layer 12 is between about 1 nm and 2 mm. The direct wire layer 12 is an insulator prior to laser activation. Wherein, in relation to the above-mentioned laser activating material, the catalyst particles may comprise a complex compound which is formed by a combination of a central ion (or atom) and several ligand molecules (or ions) with coordinate bonds. A molecule or ion, often referred to as a coordination unit. Any compound having a coordination unit is referred to as a complex compound ‘abbreviated as a "complex," or a "complex." 7!3629〇6 In one embodiment of the invention, the catalyst particles described above comprise a plurality of nano-particles. In an embodiment of the invention, the material of the catalyst particles is a transition metal complex. In one embodiment of the invention, the materials of the transition metal complex compounds described above include transition metal oxides, transition metal nitrides, transition metal complexes or transition metal chelates. In one embodiment of the present invention, the material of the transition metal complex coordination compound is selected from the group consisting of zinc (Zn), copper (Cu), silver (Ag), gold (Au), and nickel. (Ni), palladium (Pd), uranium (Pt), cobalt (Co), rhenium (Rh), iridium (Ir), iron (Fe), manganese (Mn), chromium (Cr), tungsten (W), vanadium A group consisting of (V), button (Ta), and titanium (Ti). The above-mentioned laser activating material may be solid or liquid, and the coating method may be embossing, hot stamping, spraying, immersion, spin coating, screen printing, transfer, steaming, splashing , injection molding, insert molding and other coating methods. In addition, according to a preferred embodiment of the present invention, after the coating operation of the direct line layer 12 is performed, the surface of the body structure 10 may be subjected to surface modification treatment in advance, and the surface of the surface is roughened, such as Mold biting treatment, physical surface roughening, chemical surface roughening, addition of SAM (self-assembly membrane) film, addition of adhesive layer, etc., to directly apply the subsequently coated direct line layer 12 to the surface of the body structure It has good properties and is not easily peeled off or delaminated. As shown in Figure 3, a laser with a wavelength between 1 nm and 1 mm is used, ^62906 such as a uv laser with a wavelength of 355 nm, a C02 laser with a wavelength of 1 〇 6 〇〇 nm or an IR _ of the skin. The direct line layer 12__ 13, the same = connected to the line layer 12 _ metal catalyst fine not shown) activation, whereby: = groove _ _ _ slightly equal to the direct line layer 12 ^ ^ ^ ^ ^ ^ ^ m#13a, 13d. Of course, the aforementioned groove is not a V-shaped section. The depth of the groove 13 may be smaller than that of the direct line layer η, or the groove of different depth may be burned as needed, as shown in FIG. The groove is both the groove Ue. It is worth noting that the effect of the energy of the t-ray on the direct line-forming layer is different from that of the (four) energy, and it may not be able to form the micro-protrusion. As shown in Fig. 4, a metallization process is performed to form a conductive line 14, such as a copper wire, directly on the surface of the body structure. The foregoing metallization process may be metal deposition or copper deposition of copper, gold, silver, tin, rhodium, or the like: a method or other suitable metallization, for example, a method of directly filling a conductive material. Metallization is carried out. According to the different groove structures previously formed in the direct wire layer 12, the metal wire structure after the metallization, such as the wiring structure Ma, Mb, MC and (4) of Fig. 6, wherein the line The structural ground system is embedded in the direct line forming layer 12, and the line structures 14b and 14c are partially embedded in the direct line width 12, partially protruding from the surface of the direct line forming layer 12, and the line structure (4) is embedded in the groove, and It does not protrude from the surface of the direct line layer 12. The invention at least includes the following advantages: (1) the utility model can be used as a substrate, and the U62906 can only apply the laser-activated material on the surface, so that the physical properties of the original plastic can be preserved, so that the application range is wider, and (2) Only the surface of the laser-activated material can reduce the cost of the material; (3) the laser-activated material is no longer limited by the bulk plastic material, so it can be applied to various wavelengths (four)' A special laser activation device with wavelength and wavelength, so it can cost the equipment (4) if it is fixed, the direct line layer (4) can make the laser and metal (10) parameter fixed material adopt different plastic materials for the body structure. The impact, thus increasing output and yield. , '.

The above-mentioned materials are difficult to be issued _, and the equalization of the application of the patent tree is the scope of the present invention. BRIEF DESCRIPTION OF THE DRAWINGS Figs. 1 to 4 are schematic views showing a manufacturing method in a molding according to the preferred embodiment of the present invention. The second ride shows the different secret groove profiles that the laser fires on the direct line layer. Fig. 6 shows the circuit structure of different aspects after metallization. [Main component symbol description] 10 body structure 12 direct wire layer 1362906 13 groove 13a groove 13b groove 13c groove 13d groove 14 conductive line 14a line structure 14b line structure 14c line structure 14d line structure

Claims (1)

1362906 VII. Scope of application for patents: Calling a replacement page - a method of making a molded interconnect device, comprising: providing a ~ body structure; direct structuring of the layer _ overlying the surface of the body structure - containing laser activation A layer is ablated on the layer of material. The direct line layer is activated by laser, and the wire pattern is defined by directly forming a plurality of grooves; and a metallization process is performed to directly conduct the conductive line at the body. . The surface of the structure, the method of forming the groove, wherein the metal, the glass or the above-mentioned body structure of the molded interconnect device according to claim 1 is selected from the group consisting of: a dielectric material, A group of ceramics and materials. 3. A method of fabricating a molded interconnect device as described in claim 4, wherein the dielectric material comprises a high molecular polymer. The method for producing a molded interconnect device according to claim 3, wherein the south knife compound is selected from the group consisting of a lyophilized resin, a modified epoxy resin, and a polyester resin. (polyester), acrylic acid, flu〇r〇_p〇lymer, polyphenylene oxide, polyimide, phenolic resin (phenolicresini, polyfluorene (polyphenol) P〇lysulfone), sinicinone p〇iymer, 12 1362906 __ October 14, 100 revised BT resin (bismaleimide triazine modified epoxy), cyanate ester, polyethylene (polyethylene) ), polycarbonate resin (PC), acrylonitrile-butadiene-styrene copolymer (ABS copolymer), polyethylene terephthalate (polyethylene terephthalate, PET) resin, p〇iybutylene terephthalate (PBT) tree, liquid crystal polymers (LCP), polyamide 6, PA 6 , nylon ( Nylon), polyoxymethylene (POM), poly a group consisting of phenyl sulfonate & (p〇lyphenylene sulfide PPS) and a cyclic olefin copolymer (COC). 5. The molded interconnect device of claim 2 The manufacturing method, wherein the ceramic comprises an oxidizing hammer, an alumina or an alumina to which chromium carbide is added. 6. The method for manufacturing a molded interconnect device according to the invention, wherein the laser activating material is doped There is a catalyst particle. 7. The method for manufacturing a molded interconnect according to claim 6, wherein the catalyst particle comprises a plurality of nano metal particles. 〃 8. If the patent application is -6 The mold linkage device (4) is a method, wherein the catalyst particles comprise a transition metal coordination compound. 4 ', 〇Λ 13 1362906 100 October 100 掻 掻 9 9. 9. As described in claim 8 A method of fabricating a molding interconnect device, wherein the transition metal complex compound comprises a transition metal oxide, a transition metal nitride, a transition metal complex or a transition metal chelate. The method for producing a molded interconnect device according to claim 9, wherein the transition metal is selected from the group consisting of zinc (Zn), copper (Cu), silver (Ag), and gold (Au). , nickel, palladium (pd), platinum (Pt), cobalt (Co), rhodium (Rh), iridium (Ir), iron (Fe), manganese (Mn), chromium (Cr), tungsten (^^), 鈒A group consisting of (V), sister (Ta), and titanium (Ding). 11. The method for fabricating a difficult interconnect device according to the above-mentioned item, wherein the direct line layer has an irregularity of between Inm and 2 mm. 1Z. The method for manufacturing a difficult device according to the above-mentioned item, wherein before the direct affinity layer is coated on the wire of the body structure, the following steps are further included: Surface modification treatment. 14 ‘Where, Zinc, I5. If you apply for the special 纤 围 丨 丨 丨 妓 妓 妓 的 的 100 100 100 100 100 100 100 100 100 100 100 100 100 100 100 100 100 100 100 100 100 100 16. A molded interconnect device comprising: a body structure; - a direct wire layer having a slope overlying a surface of the body structure and having - or a plurality of grooves, the direct wire layer containing a laser activating material; and 'a conductive pattern disposed in the recess of each of the direct line layers. The molded interconnect device of claim 16, wherein the body structure is selected from the group consisting of: a dielectric material, a shout, a metal, and a glass matrix material. 18. The molded interconnect device of claim 17, wherein the dielectric material comprises a high molecular polymer. 19. The molded interconnect device of claim 18, wherein the high molecular polymer is selected from the group consisting of a oxy-resin, a modified oxy-alkaline resin, and a polyester 〇 5〇lyeSter) Ester, fluoro-polymer 'p〇iyphenylene oxide, polyimide, phenolic resin, polysulfone, alizarin polymer Silicone polymer), BT resin (bismaleimide triazine modified epoxy), cyanate ester 'polyethylene 15 1362906 October 14, 2014 revised replacement page (polyethylene), polycarbonate resin (polycarbonate, PC), C Acrylonitrile-butadiene-styrene copolymer (ABS copolymer), polyethylene terephthalate (PET) resin, polybutylene terephthalate (polybutylene terephthalate, PBT) resin, liquid crystal polymer (liquid crystal po丨ymers, LCP), polyamide 6 (polyamide 6, PA 6), nylon 〇%1〇11), copolymerized polyoxymethylene (?〇卜(^ 11^% Bu 1^,?01^), polyphenylene sulfi De-PPS) and a cyclic olefin copolymer copolymer (CyCiic 〇iefm copolymer, COC). The molded interconnect device of claim π, wherein the ceramic comprises cerium oxide. Alumina or a chromium oxide-added alumina. 21. The molded interconnect device of claim 16, wherein the laser activatable material is doped with catalyst particles. The molded interconnect device of claim 21, wherein the catalyst particles comprise a transition metal complex compound. The molded interconnect device of claim 22, wherein the transition metal complex compound comprises a ship Gold purified, transitional gold-based compound, transition metal complex or transition metal chelate. 24·If you apply for the special 鄕 状 状 状 县 县 , , , , , , 136 136 136 136 136 136 136 136 136 136 136 136 The page is selected from the group consisting of zinc (Zn), copper (Cu), silver (Ag), gold (All), nickel (Ni), palladium (Pd), platinum (Pt), cobalt (Co), rhodium (Rh), A group consisting of iridium (Ir), iron (Fe), manganese (Mn), chromium (Cr), tungsten (W), vanadium (V), button (Ta), and titanium (Ti). , schema · 17