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TWI360832B - Multi-step system and method for curing a dielectr - Google Patents

Multi-step system and method for curing a dielectr Download PDF

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Publication number
TWI360832B
TWI360832B TW095141315A TW95141315A TWI360832B TW I360832 B TWI360832 B TW I360832B TW 095141315 A TW095141315 A TW 095141315A TW 95141315 A TW95141315 A TW 95141315A TW I360832 B TWI360832 B TW I360832B
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substrate
dielectric film
processing
source
hardening
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TW095141315A
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TW200735171A (en
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Dorel I Toma
Eric M Lee
Junjun Liu
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Tokyo Electron Ltd
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02296—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer
    • H01L21/02318—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer post-treatment
    • H01L21/02345—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer post-treatment treatment by exposure to radiation, e.g. visible light
    • H01L21/02348—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer post-treatment treatment by exposure to radiation, e.g. visible light treatment by exposure to UV light
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H01L21/67028—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
    • H01L21/67034—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for drying
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B05—SPRAYING OR ATOMISING IN GENERAL; APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
    • B05D—PROCESSES FOR APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
    • B05D3/00—Pretreatment of surfaces to which liquids or other fluent materials are to be applied; After-treatment of applied coatings, e.g. intermediate treating of an applied coating preparatory to subsequent applications of liquids or other fluent materials
    • B05D3/06—Pretreatment of surfaces to which liquids or other fluent materials are to be applied; After-treatment of applied coatings, e.g. intermediate treating of an applied coating preparatory to subsequent applications of liquids or other fluent materials by exposure to radiation
    • B05D3/061—Pretreatment of surfaces to which liquids or other fluent materials are to be applied; After-treatment of applied coatings, e.g. intermediate treating of an applied coating preparatory to subsequent applications of liquids or other fluent materials by exposure to radiation using U.V.
    • B05D3/062—Pretreatment
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/324—Thermal treatment for modifying the properties of semiconductor bodies, e.g. annealing, sintering
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67098—Apparatus for thermal treatment
    • H01L21/67115—Apparatus for thermal treatment mainly by radiation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67155—Apparatus for manufacturing or treating in a plurality of work-stations
    • H01L21/67207—Apparatus for manufacturing or treating in a plurality of work-stations comprising a chamber adapted to a particular process

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Power Engineering (AREA)
  • Health & Medical Sciences (AREA)
  • Toxicology (AREA)
  • Plasma & Fusion (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Formation Of Insulating Films (AREA)
  • Drying Of Solid Materials (AREA)

Description

九、發明說明： 【發明所屬之技術領域】 .言 【先前技術】 % 如熟知半導體技藝者所知， ) 種 之速度與效能進步的主要限彻素。將^制，體電路(IC 方式係藉著在ic裝置中使用低入雷〜連、.友延遲最小化的-種 • 以減少内連線電容因Γ近作為絕緣介 ··财電常數膜被用於半導體尤其， =層:此外:為了更進一步地減⑵與層 =電常數膜較習知之二氧化石夕更不 =也惡化了其機械強度。在電聚處理期間多孔 達增進機械強度的目的，業界發展出替代性的硬化技二 以使乙％氏介電常數膜更結實並適於整合。 仆取?1匕聚合物包含下列處理：處理例如利用旋塗或氣相沈積(如 予氣相沈積CVD)技術所沈積之薄膜以在薄膜内產生交聯。本發 明人瞭解到，在硬化處理期間自由基聚合反應為交聯的主要路 徑。當聚合物鏈產生交聯時，改善了機械特性例如揚式係數 (Young’s modulus)、膜硬度、斷裂韌性(ftactoe t〇ughness)、界面結· 合性’藉此改善了低介電常數膜的製造可靠度。 膜 水氣 =此：:二；以在多孔介電膜中形成孔隙的成： ，略來軸具有超低介電錄的多孔介電 、移除溶iί 可自膜至關改變，包含例如移除 400°C的溫产銘Hi ’低介電常數(1〇W-k)材料通常在30〇£>C至 到的交_:=產數【==硬連 .結構的膜 介電ί熱=期：②的能量量輸送至膜但卻不損害 基。由於執能方ill的溫度乾圍内，僅能產生少量的自由 =高2二=爐硬，化需要高 由以上料觀狀财;數生成且 _hyltermmatlGn)’因此難以翻所欲之交聯程^〜 【發明内容】 明之另—紐可處理介賴以硬化該介電膜。 的現此連接之多處理模組 態樣提供任何上觀/或其他 =:，施行乾燥處理:減少量乾 糸.-先’連接至該乾燦系統並用以施行硬化處理。硬化系統 1360832 夕紫外’輕射源’用以將該介電膜暴露至UV·射.及红 乾燥=硬^^射，統包含連接至 於乾亀树真空狀況下 實：:放基板上之介電膜的方法及電腦可 電膜以移除或部^地移除介’根據乾燥處理來乾燥介 將該ί電膜4維持傳送期間之真空狀況；及藉由 電膜。電、Ί 輪射與將該介電膜暴露至IR轄射來硬化介 【實施方式】 的其_應瞭解：本發明可於脫離該些特定細節 點。:=;=:r r方法解決了某些熱硬化的缺 而的:里傳J。因此’可在較少的熱存積下增加交聯程度。 性硬化方法可改=類ί的S3，愈來愈大的問題，替代 势糾娜i 機械性f。例如，可使用電子束(ΕΒ)、 盖撫舰/Γ、紅外(IR)輪射及微波(MW)輻射來硬化IK臈以改 。機械強度，但不犧牲介電性質及膜疏水性。 然而，雖然EB、UV、汉及MW硬化皆具有其優點，但此些 1360832 技術亦有其限制。南能量硬化源如EB及W可提 多於交聯反應所需之自由基，因而在互補 加、^ 幅改善的機械性質。另一方面，電子及uv可產生 鍵解離，此可不利地降低臈之所欲物理 :2=二 性、增加殘細應力、孔隙結構瓦解、膜緻密化及介電常头數去^；水 傳遞效率’但_亦具摘仙，例如表層或表面^用、 關’在數個_中相似標號代表相同或) ，。圖1A顯不處理基板上之介電膜的處理系統^，人:'二 ^統10及連接至乾燥系統10之硬化系統2 了 ^夸g 用以移除介電财之-或多種污染物或料減少^ 充可 可干‘ 至:電膜内之特定污染物的充分降_ 固J目，.〇刈/Q至約100%。或者，例如…^ 物的充分降低範圍可自約8〇%至約1〇〇t/f A1電膜内之特^染 仍參照圖1A，硬化系統2〇可藉著在介雷 生交製赶这膜，以例如改善介= 含红外(IR^i射、焊月妙k ^射例如，該兩或更多個輻射源可包 輻射Λ(υν^射源。將基板暴露至⑽輻射及汉 板暴露至丁 I在依序暴露期間，例如將基 」先將基板暴露至1r輻射，反之亦缺。 25汽Γ 可包含汉波長帶之源，其範圍自約1微米至約 Μ射’而較佳細自約8微米至約14微米、此外^ 8 ΐΙϋΓ;皮長击帶源’其產生之11射範圍自約100奈米㈣至 、力600奈未nm，較佳範圍自約2〇〇nm至約4〇〇nm。 至八玄在硬化處理的不同階段期間’能階(h v )及 膜之能讀遞率(q，)會變化。硬化處理可包含下列者用二 f . 士生交聯引發劑、燒除成孔劑、成孔劑分解、膜交聯及選‘ 膜擴散。每一機制可能會需要不同的能階及至介電 電質技藝者所習知之將介^膜4 f J電質及°^介 適用於本發明! H膜減於基板上的其他系統與方法亦 介電特徵。 料。此外’介電膜20可為多孔或非多孔:；及 巧機秒蝴。例如，此類膜包含：由應用材料H ，所販售之「黑鑽石™」CVD有機雜鹽玻璃(S0G)膜，H) 諾發系統(Novellus SyStems)公司所販售之「珊瑚TM 一 電膜可包含單相材料’如具有有機側終止‘i 化夕糸本體，在硬化處理期間該有機側終止團抑制交聯以 空隙(或孔洞）。此外例如，多孔介電膜可包含雙相材料，如’右 機材料(如多孔前體)之内含物的氧化石夕系本體，在硬化處理^ 有機材料會分解並蒸發。或者，介電膜可包含無機魏鹽系材料: 如使用SOD技術所沈積之氫倍半魏柳ydrQgen si][ses恤職 (HSQ)]或甲基倍半石夕乳烧[咖_ siiseSqUi〇xane (msq)]。例如此 類膜包含由Dow Coming公司所販售之FQx HSQ、由D〇w c〇m 公司所販售之XLK多孔HSQ及由JSR Microelectronics公司所販 售之JSR LKD-5109。仍或者，該介電膜20可包含使用s〇D技術 所沈積之有機材料。例如’此類膜包含由D〇w chemical所販售之
SiLK-I、SiLK-J、SiLK-H、SiLK-D 及多孔 SiLK、多孔 SiLK-Y 及 多孔SiLK-Z半導體介電質樹脂’及由Honeywell公司所販隹之 FLARE™ 及 Nano-glass。 〇 又，如圖1A中所示，傳送系統30可連接至乾燥系統1〇以將 基板傳入及傳出乾燥系統10與硬化系統20，並與多元件製造系統 40交換基板。傳送系統30可將基板傳送至乾燥系統1〇與硬化系 統20並自上述者傳回基板’並同時維持真空環境。例如，乾燥與 1360832 理元ΐ 夕及傳送系統3〇可包含多元件製造系㈣内的處 自處理元元ΐ製造1f4G可允許基板傳送至處理元件並 系統、圖=兔ΐ; ί統、沈積系統、塗佈 二ίΐΐΓ處理，可使舰離構件5G來連接各鹏統。“、， 可包含下列至少—者：熱絕緣構件，以提供敎C . 系i 可以任何順序來設置乾燥與硬化 膜的ίίίί發明之另—實施例中，圖1B顯示處理基板上之介電 =巧糸統1〇〇處理系統1G〇包含乾燥系統⑽、硬化系統m 膜中夕—，，工？:1配置。例如’乾燥系統1(%可用以移除介電 如水氣!^種7染物或將其降低至充分的水、準’污染物包含例 ^水軋、洛劑、成孔劑或任何可干擾硬化系統120所進 染ΐ。此外例如，硬化系統120可藉由於介電膜内 產生或。卩分產生交聯來硬化介電膜，以例如改善介電膜_ ^。又’處理线100可選擇性地包含後處理系統14G i用以改變 ，磁化之介電膜。例如’後歧可包含在介賴上旋塗或氣相、^ 積另一膜’以提升接續之膜的黏著性或改善疏水性。或者，如 ^後處理系統中可藉由使用離子來輕微轟擊介電膜來提升黏著 ㈣二如ΐ 中所示’傳送系統130可連_燥系統⑽以 將基板傳入及傳出乾燥系統110，並可連接至硬化系統12〇以將芙 板傳入及傳出硬化系統120，並可連接至選擇性的後處理系統土 140 ’以將基板傳入及傳出後處理系統14〇。傳送系統:將基 板傳入及傳出乾燥系統110、硬化系統120及選擇性的後處理系 140，並同時維持真空環境。 此外，傳送系統130可與一或多個基板晶盒(未圖示)交換基 板。雖然在®叫堇顯示兩或三種處理，但其他處玉里系統可使用土 送系統130 ’包含例如働“統、沈積系統、塗佈纽、圖型化系 11 1360832 150可包含下列至來連接各個系統。例如，隔離系統 件’以提供。^，絕緣構件’以提供熱絕緣；及閘閥構 150的-部、分、列如’傳送系統130可作為隔離構件 恭膜在本發明之實施射，圖1C顯示處理基板上之八 ，的處理系統200。處理系統2GG 介 或將其降健充分的水 J*、=〜種和物
或任何可干擾硬化系統22^$5 ^2甘溶劑、成孔劑 外例如，硬污染物。此 硬化域膜，以例如改蓋介電膜機：f生或^產生父聯來 可選擇性地包含後處ί二2 ί械性f。又，處理系統_
J，後處理可包含在介電膜上旋塗或氣 丨二H 績之膜的黏著性或改善疏水性H ^ ^叫升接 由使用離子綠微轟擊介電縣提升黏^性在线中可藉 w可水平或垂直(即，叠置)配置乾燥系統210、硬化李统220及 =:系統⑽又，如圖lc中所示，傳送系統 =入及傳出乾燥系統210,並可連接^ f 220以將基板傳人及傳出硬化系、統22()，並可連接至選擇性的1 处理糸統240 ’以將基板傳入及傳出後處理系統跡傳送系統现 可將基板傳入及傳出乾燥系統21〇、硬化系統22〇及選擇性 理系統240，並同時維持真空環境。 此外，傳送系統230可與一或多個基板晶盒(未圖示 其 板:雖然在圖1C僅顯示兩或三種處理，但其他處理系統可使用土 运系統130 ’包含例如餘刻系統、沈積系統、塗佈系統、圖型化 統、度量系統等此類裝置。為了隔離在第—與第二系統中所進行 的處理’可使用隔離構件25〇來連接各個系統。例如，隔離系统 250可包含下列至少一者：熱絕緣構件，以提供熱絕緣；及問闕構 12 1360832 。此外例如’傳送系統230可作為隔離構件 圖1Α中所示之處理系統1之乾燥系統10與硬化系統2〇的至 ^者包含至少兩傳送開口以使基板可經其出入。例如，如圖 包含兩傳送開σ，第一傳送開σ為允許基板 :乾紅糸、·先10與傳送系統30間出入的通道，而第二傳送開口為
允許基板於乾燥系統與硬化系統間出入的通道。然而，圖1Β中所 了之處理系統100與圖lc中所示之處理系統各別之每一處理 ，統110、120、140與210、220、240包含至少兩傳送開口以使 基板可經其出入。
件_，以提供真空隔離 250的'^卩分。 現參知、圖2，顯示根據本發明之另一實施例之乾燥系统3⑻。 乾燥系統300包含：乾燥室，用以產生乾淨且無污染之環境來 乾燥位於基板支撐件320上的基板325。乾燥系統3〇〇可包含熱處 理裝置330、’此，熱處理裝置33〇連接至乾燥室31〇或連接至基板支 ^件’並藉由升高基板325之溫度來蒸發污染物如水氣、殘餘 浴劑等。又’乾燥系統3〇〇可包含微波處理裝置34〇，此微波處理 ^置340連巧至乾燥室31〇並用以局部加熱出現在振盪電場中的 污染物。乾燥處理可使用熱處理裝置33〇或微波處理裝置34〇或 兩者來輔助乾燥基板325上的介電膜。 熱處理裝置330可包含一或多個埋置於基板支撐件32〇中的 電導式加熱元件，其連接至電源及溫度控制器。例如，每一加熱 元件可包含連接至用以供給電能之電源的電阻式加熱元件。或 者’熱處理裝置33G可包含-或多個連接至電源及控制器之輻射 式，熱兀件。例如，每一輻射式加熱元件可包含連接至用以供給 電能>之電源的加熱燈。例如，基板之溫度範圍可自約2(rc至約 500 C，而較佳之溫度範圍可自約2〇〇至約4〇〇。c。 办微波處理源340可包含可變頻率微波源，用以掃描經過頻帶 寬度(bandwidth of frequencies)的微波頻率。頻率變化可避免電荷累 積((^职如11(1哪），因此允許吾人將微波乾燥技術無損害地運用 13 1360832 至敏感的電子裝置。 在一實例中’乾燥系統300包含具有可變頻率微波裝置及熱 處理裝置兩者的乾燥系統，例如由Lambda Technologies公司（860 Aviation Parkway，Suite 900, Morrisville，NC 27560)所販售之微波 爐管。至於額外之細節’在讓渡予LambdaTechnologies公司之美 國專利編號 5,788,915 之名為「Curing polymer layers on semiconductor substrates using variable frequency microwave energy」之專利中闡述了微波爐管，特將其所有内容包含於此作為 參考。 基板支撐件320可用以夾置基板325，或可不夾置基板325。 例如基板支樓件320可以機械式或電子式夾置基板325。 /，妝圖2 ’乾燥系統300更可包含氣體注射系統35〇，此氣 體注射糸統3^0連接至乾燥室並用以將淨化氣體通入至乾燥室 可乾燥室31Q。於乾燥處理期間，基板^ 了處於有或無真空狀況之惰性氣體環境。 ㈣ί ’ i乞ϊ ί、ί 300可包含控制器360 ’控制器360連接球焊 330 ' 340 ，體主射糸統35。及真空泵抽系統355。控制器 盗^己憶體及數位輸人輸出接口，數位輪 ^ = 以溝通與活化乾燥系統3〇〇之輸出並監^出=3產生足 出的控制電壓。儲存於記情濟中田乾综糸、、先300之輸 方來與乾燥系統300互動Γγ制哭G ^ _經儲存之處理配 理元件_、320、330 1 任何數目之處 提供、處理、儲存及顯示來自處理元件之360可收集、 含數個應用程式以控制-或多個處理元件。、^控制器360可包 包含圖型使用者介面(⑽)元件(未 供=器360可 監測及/或控制-或多個處理 j 供使使用者能夠 14 1360832 現參照圖3，顯示根據本發明之另一實施例之硬化系統4〇〇。 1H400包含··硬化室410，用以產生乾淨且無污染之環境來 硬也位於基板支撐件420上的基板425^^系統4〇〇更可包含兩 或更多個輻射源，用以將具有介電膜之&425暴露至多重£]^ 波長下之電磁(EM)輻射。例如，該兩或更多個輻射源可包含纟工 (IR)輻射源440及紫外(UV)輻射源445。將基板暴露至爪輻 IR輕射可同時、依序或彼此重疊施行。 IR輻射源440可包含寬帶(broa(i-band)IR源或可包含窄帶 (narr〇W-band)IR源。IR輻射源可包含一或多個瓜燈，或一或 IR雷射(連續波(CW)、可調變或脈衝），或任何其組合。m能量 圍可自約G.lmW至約2GGGW。IR輻射波長範圍可自約丨微米至 約25微米，較佳範圍可自約8微米至約14微米。例如，汉輻 源440可包含ir元件，如具有輸出頻譜範圍自約1微米至約μ' 微米之陶瓷元件或碳化矽元件，或IR輻射源44〇可包含半導體+ 射(二極體)、或具有光學參數放大器的離子、几藍寶石或染料雷射田。 UV幸昌射源445可包含寬帶uv源，或可包含窄帶—源。w 輕射源可包含-❹個UV燈，或—❹個w雷射(連續波 =〇、可繼或脈衝），或任何其組合。例如，可自微波源、弧放 l(=d1SCharge)、介電阻障放電法(didectricbaiTierdischa㈣或電 …= 里生成法(elctron impact generation)來產生uv輻射。υγ能量 圍可自約aImWW至約2_WW。w輕射波長範圍 =自、.·勺100奈米㈣至約600nm ’較佳範圍可自約2〇〇_至約 。例如，UV輻射源445可包含直流(DC)或脈衝燈，如具有 圍自約18Gnm至約5GGnni之重氫㈣燈，或W輻射 二十含半導體雷射(二極體)、⑻氣體雷射、三倍頻Nd:YAG 雷射或銅蒸氣雷射。 fll射源440 S UV幸畐射源445或兩者可包含任何數目之光 整輸出輻射的—或多種特性。例如，每—輻射源更 Τ包含先學缝、光學制、·器、準 mm 15 1360832 技藝者所習知的此類 控制ίίίίί3更可包含溫度控制系統’其可用以升高及/或 二士 5 /皿度。溫度控制系統可為熱處理裝置430的-部 二墓稽件420可包含一或多個埋置於基板支樓件420中的
Sit7,件’其連接至電源及溫度控制器。例如，每一加敎 ^可13連接至用以供給電能之電源的電阻 巧件420可包含一或多個輕射式加熱元件。例如 ΪΪΙί約Μ C至約5GG°C’而較佳之溫度範圍可自約20CrC^ 基板支撐件420可用以夹置基板425 ’或 例如’基板支撑件可以機械式或電子式夾置mf/反325 ° I-主硬化系統更可包含氣體注射系統㈣，此氣 室 tit連接至硬化室並用以將淨化氣體通入至硬化 ί接包含真空_統45^真空‘系且统： ί:匕ί Γ00可包含控制器460，控制器.連接至硬化 i=2 =件420、熱處理褒置430、ir輕射源440、υν ^ =45、氣體注射系統及真空泵抽系統455。控制哭· ^3楗處理益、記憶體及數位輸入輸出接口，數位 。 ίϊί生i:溝通與活化硬化系統400之輸出並監測來自硬化夸 =====憶=之程咖 件rio::43= .制态460可忮集、提供、處理、儲存 』一佐 16 1360832 控制器460可包含圖型使用者介面(GU1)元 使使用者能夠監測及/或㈣—❹個處理元；/、域 。。可以 DELL PRECISI0N w〇RKSTATI〇N 6 i 〇 顶來施行控制 3 ^60 ί 3 以普通用途電腦、處理器、數位訊號處理器等 末施=控制⑤360與460’使基板處理設備施行本發明之一部份 ’以對執ϋ包含於電腦可讀媒體中之—或多個指令 方少固列的控制裔360與460作回應。電腦可讀媒體或記 發明之教示所撰寫的程式指令，及用以容 Α存lU、5己錄或其他此處所述之資料。電腦可讀媒體 ^軟碟、磁帶、磁光碟、PR〇Ms ( EPR0M、 eeprom、快閃 eprom 卜 dram、sram 他磁性媒體、光碟(如CD_卿任何 == 其 =|^=嘯增舰、娜调=他 附进控ί 460可設置在乾燥系統300與硬化系統400之 化丰场2 際網路或内部網路設置在乾燥系、统300與硬 化糸統400之运端。因此，控制器36〇 更 内部,:，路,之… 料。控制器360與460可連接至客戶端(即，裝置ϊί 。網路，或可連接至供應商端之内部網路(即，機台^ i資料。由直接連、，、内部網路或網際網路中之至少一種來交 膜的ϊί照士圖士4,敛舰據本發明另一實施例之處理基板上之介電 板上之奍電i的二始於在第一處理系統中娜
Sit介電膜中之一或多種污染物，包含例如水氣溶ί 成孔^其他可干_叙硬域_其他污祕。 乂驟52〇中，在第二處理系統中硬化介電膜。第二處理系 17 1360832 = 善生或部分產生交聯來硬化介 在其中，在乾燥及硬化處理後弟=:==染降低最低。 電膜進行後處理，後處理系統侧以硬^介 的附ί性，善疏水性》或者例如 離子來對；！麵如輕制縣來提升 ^ 5,714,437 ^ rMeth〇d 〇f 適合於本發明的此織處理，特將其所有内 雖然上述僅就本發明之數個例示性實施例作詳細闡 知此項技藝者触意：在不實質上麟本發明之_、教示及優^ 的情況下，可在例示性的實施例中進行許多的修改。因此，有 此類修改皆應包含於本發明之範_中。 18 【圖式簡單說明】 用4=霑本發明之一實施例之―系統 圖2係根據本發明之另一實施例之乾燥系統的橫剖面示意圖。 圖3係根據本發明之另一實施例之硬化系統的橫剖面示专圖。 圖4係根據本發明之更另一實施例之處理膜處理方法的^^程 【元件符號之說明】 φ 1:處理系統 :乾燥系統 20 :硬化系統 30 =傳送系統 4〇 :多元件製造系統 50 :隔離構件 100 :處理系統 1U):乾燥系統 120 :硬化系統 130:傳送系統 ® 140:後處理系統 150 :隔離構件 200 :處理系統 21〇 :乾燥系統 220 :硬化系統 230 :傳送系統 240 :後處理系統 200 :乾燥系統 310 :乾燥室 320 :基板支撑件 19 1360832 . 325 :基板 330 :熱處理裝置 340:微波處理裝置 350 :氣體注射系統 355 :真空泵抽系統 • 360:控制器 .. 400 :硬化系統 410 :硬化室 420 :基板支撐件 ^ 430:熱處理裝置 9 425 :基板 - 440 :紅外(IR)輻射源 445 :紫外(UV)輻射源 450 :氣體注射系統 460:控制器 500 :流程圖 510 :在乾燥系統中乾燥介電膜 520 ··在硬化系統中藉由將介電膜暴露至紫外(UV)輻射及紅外 (IR)輻射來硬化介電膜 20

Claims (1)

1360832 100年11月3曰修正替換頁 申請專利範圍： 無劃線）' L ，處理基板上之介電膜的處理系統，包含： 的輕’用以施行硬化處理，此硬化系統包含：兩個以上 射源各該群組專用於特定輻射波段；該兩個以上的輕 紫l(uv)輻射源，用以將該介電膜暴露至^輻射；及 輻射;======= 譜範圍内的波絲放射該瓜輻射。I —至14化卡之頻 祕：專利棚第1項之處理基板上之介電膜的處理系 ㊣射源包含範圍自約卿奈米至約議奈米之UV 从申請專利範圍第1項之處理基板上之介電膜的處理季 輕射源包含範圍自約200奈米至約400奈米Αν “二士如申清專利1巳圍第1項之處理基板上之介電膜的處理车 統’其中mR輻射㈣含絲㈣源、或轉細源 序八 5甘”請專利範圍第i項之處理基板上之介電膜的處理3。 、，先’ /、中该IR輻射源包含一或多個瓜燈、或一或多 如 或其組合。 射， 6. 如申請專利範圍第1項之處理基板上之介電膜的處 ^其中該UY_源包含寬帶||射源、或？帶_源，或其糸組 7. 如申請專利範圍第1項之處理基板上之介電膜的處 統’其中該uv輻射源包含一或多個uv燈、或一或多個w雷、 或其組合。 缉射， 8. 如申請專利範圍第1項之處理基板上之介電膜 統，更包含： 、城糸 乾無糸統，用以施4亍乾燥處理，以減少該介電膜中咬上之、 21 1360832 :¾替換頁 染物量；及 ^ ^燥至’用以輔助該乾燥處理； ^ #件連接至絲燥室顧以支魏乾燥室中的該基 板 乾燥該基板理裝置或兩者’連接至該乾燥室並用以 統，軸處理系 統 ，其中该溫度控制元件包含電阻式加熱元件。電_處理糸 从ϋΐ口申請專利範圍第8項之處理基板上之介電膜的声㈣ i 4〇tc該熱處理裝_ _基板之溫度升高自^0 ΐ至 14.如申請專·圍第13項之處理基板上之介電 ]其中該氣體注射祕係用以將貴魏體或氮氣供給至該= 15·如申請專利範圍第1項之處理基板上之介電膜的處理备 統，其中該硬化系統更包含： 糸 硬化室，用以輔助該硬化處理； 板.ί板支撐件，連接至該硬化室並用以支撐該硬化室中的該基 餅，I2中如利範圍第8項之處理基板上之介電膜的處理系 、、先姐理裝置包含連接至該麟室之可_率微“ .如申請專利麵第8項之處理基板上之介電膜的乂理备’、。 二系統燥室包含用以將淨化氣體供給至該乾燥室的\脸 統 室 22 1360832 95141315(無劃線） 電膜溫度控制系統，連接至該硬化室並用以加 絲請專繼圍第15項之處理基板上之介電朗處理李 ϋ其中麵度控似祕含連魅職板支料的溫度控制I 轉請專利範圍第16項之處理基板上之介賴的處理孚 統，其中該溫度控制元件包含電阻式加熱元件。 处糸 18·如申請專利範圍第Μ項之處理基板上之介電膜的 至 二ο'ΐ該溫度控制系統係用以升高該基板之溫度自約200 °CJ 統，k9.=請專利範圍第1項之處理基板上之介電膜的處理系 該介=理系統’連接至該傳送系統顧以在該硬化處理後處理 祕10.土〇申請專利範圍* 19項之處理基板上之介電膜的Θ王" 統，其中該後處理系統包含下列之一或多者：的處理糸 ，刻系統、沈積系統、氣相沈積系、统 處理系統、賴處理系統、清理系統或熱處理系統積糸統、真空 ϊίΐίίιί之介電膜的處理方法，包含下列步驟： 統包含兩個以上_射源群組，各 ^中^化糸 該兩個以上的輻射源群組包含 ==^化射波段； 膜暴露至料_ ;及紅外用以將該介電 輻射；及 以邮射源’用以將该介電膜暴露至IR 硬化步驟，藉由下财驟來硬傾介電膜： =該介電縣露至來自外储狀_^ _將該介電膜暴露至來自該紅外輻射源之IR_ 、’ 輪射源包含IR波帶源，該IR波帶源係以在=’其中該IR 譜範圍内的波長來放射該IR輕射。’、’、 卡至Η微米之頻 23 丄，832 將该介電膜暴露至由一或多個uv 兩者所產生的UV輕射。 4戍夕個w雷射或 中將該介電膜的處理方法，其 者所至由一或多個汉燈或—或多個汉雷射或兩 包含从如申請專利範圍第η項之基板上之介電膜的處理方法，更 t硬化步驟後藉由施行下列之—或多者來處 將另一膜沈積至該介電膜上； η電膑. 清理該介t膜；或 將該介電臈暴露至電漿。 25.如申請專利範圍第21項之基板 中該基板放置及硬化步驟之至少一者包含：；|賴的處理方法，其 處理低介電常數介電膜。 令在電腦系統上執行之程式指 田程式齡時使該電織觀行 基板放置娜’賴基減置到硬化系統巾；’ 源群組，各該群組專用於特^輻^皮段? 個以上的輻射源群組包含：紫外㈣輻射源， 3露^ UV輕射；及紅外_射源，用以將該介電膜暴露至IR 硬化步驟，藉由下列步驟來硬化該介電膜： 將該介電臈暴露至來自該紫外輻射源2UV輻射；及 將該介電膜暴露至來自該紅外輻射源之IR輻射。 使該項之電腦可讀媒體，其中練式指令 24 1360832 在該基板放置 * 介電常數介電膜。 100年11月3日修正替換頁 95141315(無劃線） 乾燥、傳送及硬化步驟之至少一者中處理低
25
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US9184047B2 (en) 2015-11-10
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