TWI360152B - Apparatus and process for sensing target gas speci - Google Patents
Apparatus and process for sensing target gas speci Download PDFInfo
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- TWI360152B TWI360152B TW094101145A TW94101145A TWI360152B TW I360152 B TWI360152 B TW I360152B TW 094101145 A TW094101145 A TW 094101145A TW 94101145 A TW94101145 A TW 94101145A TW I360152 B TWI360152 B TW I360152B
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- Prior art keywords
- gas
- gas sensor
- nickel
- sensor assembly
- species
- Prior art date
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- 238000000034 method Methods 0.000 title claims description 53
- 230000008569 process Effects 0.000 title claims description 21
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims description 194
- 229910052759 nickel Inorganic materials 0.000 claims description 91
- 241000894007 species Species 0.000 claims description 88
- 238000000576 coating method Methods 0.000 claims description 73
- 239000011248 coating agent Substances 0.000 claims description 72
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 claims description 51
- 239000011737 fluorine Substances 0.000 claims description 51
- 229910052731 fluorine Inorganic materials 0.000 claims description 51
- 230000008859 change Effects 0.000 claims description 30
- 239000012530 fluid Substances 0.000 claims description 22
- 239000000463 material Substances 0.000 claims description 22
- 229910000881 Cu alloy Inorganic materials 0.000 claims description 17
- YOCUPQPZWBBYIX-UHFFFAOYSA-N copper nickel Chemical compound [Ni].[Cu] YOCUPQPZWBBYIX-UHFFFAOYSA-N 0.000 claims description 16
- 230000004044 response Effects 0.000 claims description 16
- 238000012544 monitoring process Methods 0.000 claims description 15
- 229910000990 Ni alloy Inorganic materials 0.000 claims description 14
- 239000000835 fiber Substances 0.000 claims description 11
- NFFIWVVINABMKP-UHFFFAOYSA-N methylidynetantalum Chemical compound [Ta]#C NFFIWVVINABMKP-UHFFFAOYSA-N 0.000 claims description 11
- 229910003468 tantalcarbide Inorganic materials 0.000 claims description 11
- 229910045601 alloy Inorganic materials 0.000 claims description 10
- 239000000956 alloy Substances 0.000 claims description 10
- 229910052782 aluminium Inorganic materials 0.000 claims description 10
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 10
- 229910052751 metal Inorganic materials 0.000 claims description 9
- 239000002184 metal Substances 0.000 claims description 9
- 239000002131 composite material Substances 0.000 claims description 8
- 239000002243 precursor Substances 0.000 claims description 8
- 229910052709 silver Inorganic materials 0.000 claims description 8
- 239000004332 silver Substances 0.000 claims description 8
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims description 7
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 6
- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 claims description 6
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims description 6
- 229910052802 copper Inorganic materials 0.000 claims description 6
- 239000010949 copper Substances 0.000 claims description 6
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 claims description 6
- 229910052799 carbon Inorganic materials 0.000 claims description 5
- UNASZPQZIFZUSI-UHFFFAOYSA-N methylidyneniobium Chemical compound [Nb]#C UNASZPQZIFZUSI-UHFFFAOYSA-N 0.000 claims description 5
- -1 nickel-copper aluminum Chemical compound 0.000 claims description 5
- 239000000126 substance Substances 0.000 claims description 5
- 229910004014 SiF4 Inorganic materials 0.000 claims description 4
- 229910052758 niobium Inorganic materials 0.000 claims description 4
- 239000010955 niobium Substances 0.000 claims description 4
- GUCVJGMIXFAOAE-UHFFFAOYSA-N niobium atom Chemical compound [Nb] GUCVJGMIXFAOAE-UHFFFAOYSA-N 0.000 claims description 4
- ABTOQLMXBSRXSM-UHFFFAOYSA-N silicon tetrafluoride Chemical compound F[Si](F)(F)F ABTOQLMXBSRXSM-UHFFFAOYSA-N 0.000 claims description 4
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 claims description 3
- 101100328843 Dictyostelium discoideum cofB gene Proteins 0.000 claims description 3
- 239000004642 Polyimide Substances 0.000 claims description 3
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims description 3
- IYRWEQXVUNLMAY-UHFFFAOYSA-N carbonyl fluoride Chemical compound FC(F)=O IYRWEQXVUNLMAY-UHFFFAOYSA-N 0.000 claims description 3
- 229910052804 chromium Inorganic materials 0.000 claims description 3
- 239000011651 chromium Substances 0.000 claims description 3
- WPBNNNQJVZRUHP-UHFFFAOYSA-L manganese(2+);methyl n-[[2-(methoxycarbonylcarbamothioylamino)phenyl]carbamothioyl]carbamate;n-[2-(sulfidocarbothioylamino)ethyl]carbamodithioate Chemical compound [Mn+2].[S-]C(=S)NCCNC([S-])=S.COC(=O)NC(=S)NC1=CC=CC=C1NC(=S)NC(=O)OC WPBNNNQJVZRUHP-UHFFFAOYSA-L 0.000 claims description 3
- 229910052763 palladium Inorganic materials 0.000 claims description 3
- 229910052697 platinum Inorganic materials 0.000 claims description 3
- 229920001721 polyimide Polymers 0.000 claims description 3
- 239000011148 porous material Substances 0.000 claims description 3
- 229910052719 titanium Inorganic materials 0.000 claims description 3
- 239000010936 titanium Substances 0.000 claims description 3
- 229910052720 vanadium Inorganic materials 0.000 claims description 3
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 claims description 2
- 229910052741 iridium Inorganic materials 0.000 claims description 2
- GKOZUEZYRPOHIO-UHFFFAOYSA-N iridium atom Chemical compound [Ir] GKOZUEZYRPOHIO-UHFFFAOYSA-N 0.000 claims description 2
- 229910052746 lanthanum Inorganic materials 0.000 claims description 2
- FZLIPJUXYLNCLC-UHFFFAOYSA-N lanthanum atom Chemical compound [La] FZLIPJUXYLNCLC-UHFFFAOYSA-N 0.000 claims description 2
- 229910052750 molybdenum Inorganic materials 0.000 claims description 2
- 239000011733 molybdenum Substances 0.000 claims description 2
- 229910000838 Al alloy Inorganic materials 0.000 claims 3
- 235000017166 Bambusa arundinacea Nutrition 0.000 claims 1
- 235000017491 Bambusa tulda Nutrition 0.000 claims 1
- 241001330002 Bambuseae Species 0.000 claims 1
- 235000015334 Phyllostachys viridis Nutrition 0.000 claims 1
- KJTLSVCANCCWHF-UHFFFAOYSA-N Ruthenium Chemical compound [Ru] KJTLSVCANCCWHF-UHFFFAOYSA-N 0.000 claims 1
- 150000001412 amines Chemical class 0.000 claims 1
- 239000011425 bamboo Substances 0.000 claims 1
- 235000013405 beer Nutrition 0.000 claims 1
- 230000001419 dependent effect Effects 0.000 claims 1
- 125000001153 fluoro group Chemical group F* 0.000 claims 1
- 229910052707 ruthenium Inorganic materials 0.000 claims 1
- 229910052712 strontium Inorganic materials 0.000 claims 1
- CIOAGBVUUVVLOB-UHFFFAOYSA-N strontium atom Chemical compound [Sr] CIOAGBVUUVVLOB-UHFFFAOYSA-N 0.000 claims 1
- 239000013589 supplement Substances 0.000 claims 1
- LEONUFNNVUYDNQ-UHFFFAOYSA-N vanadium atom Chemical compound [V] LEONUFNNVUYDNQ-UHFFFAOYSA-N 0.000 claims 1
- 239000007789 gas Substances 0.000 description 254
- 239000011162 core material Substances 0.000 description 29
- 239000004065 semiconductor Substances 0.000 description 13
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 11
- 229910010271 silicon carbide Inorganic materials 0.000 description 11
- 229920000049 Carbon (fiber) Polymers 0.000 description 9
- 239000004917 carbon fiber Substances 0.000 description 9
- 229920000768 polyamine Polymers 0.000 description 8
- 230000004043 responsiveness Effects 0.000 description 8
- 239000010410 layer Substances 0.000 description 7
- 238000004519 manufacturing process Methods 0.000 description 7
- 229920003223 poly(pyromellitimide-1,4-diphenyl ether) Polymers 0.000 description 7
- 230000035945 sensitivity Effects 0.000 description 7
- 238000005530 etching Methods 0.000 description 6
- 239000000758 substrate Substances 0.000 description 6
- 238000006243 chemical reaction Methods 0.000 description 5
- 238000001514 detection method Methods 0.000 description 5
- 238000001459 lithography Methods 0.000 description 5
- 238000012545 processing Methods 0.000 description 5
- 238000004140 cleaning Methods 0.000 description 4
- 150000001875 compounds Chemical class 0.000 description 4
- 230000006870 function Effects 0.000 description 4
- VNWKTOKETHGBQD-UHFFFAOYSA-N methane Chemical compound C VNWKTOKETHGBQD-UHFFFAOYSA-N 0.000 description 4
- 238000007747 plating Methods 0.000 description 4
- 229910052715 tantalum Inorganic materials 0.000 description 4
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 4
- KRHYYFGTRYWZRS-UHFFFAOYSA-M Fluoride anion Chemical compound [F-] KRHYYFGTRYWZRS-UHFFFAOYSA-M 0.000 description 3
- 238000001467 acupuncture Methods 0.000 description 3
- 238000000151 deposition Methods 0.000 description 3
- 238000010438 heat treatment Methods 0.000 description 3
- PXGOKWXKJXAPGV-UHFFFAOYSA-N Fluorine Chemical class FF PXGOKWXKJXAPGV-UHFFFAOYSA-N 0.000 description 2
- OAKJQQAXSVQMHS-UHFFFAOYSA-N Hydrazine Chemical compound NN OAKJQQAXSVQMHS-UHFFFAOYSA-N 0.000 description 2
- 238000004458 analytical method Methods 0.000 description 2
- 238000005452 bending Methods 0.000 description 2
- 210000000988 bone and bone Anatomy 0.000 description 2
- WXANAQMHYPHTGY-UHFFFAOYSA-N cerium;ethyne Chemical compound [Ce].[C-]#[C] WXANAQMHYPHTGY-UHFFFAOYSA-N 0.000 description 2
- 238000010276 construction Methods 0.000 description 2
- 230000007797 corrosion Effects 0.000 description 2
- 238000005260 corrosion Methods 0.000 description 2
- 230000008021 deposition Effects 0.000 description 2
- 150000002222 fluorine compounds Chemical class 0.000 description 2
- YBMRDBCBODYGJE-UHFFFAOYSA-N germanium dioxide Chemical compound O=[Ge]=O YBMRDBCBODYGJE-UHFFFAOYSA-N 0.000 description 2
- 150000002500 ions Chemical class 0.000 description 2
- 150000002739 metals Chemical class 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000004806 packaging method and process Methods 0.000 description 2
- 229920000642 polymer Polymers 0.000 description 2
- 238000003825 pressing Methods 0.000 description 2
- 230000003238 somatosensory effect Effects 0.000 description 2
- MZLGASXMSKOWSE-UHFFFAOYSA-N tantalum nitride Chemical compound [Ta]#N MZLGASXMSKOWSE-UHFFFAOYSA-N 0.000 description 2
- GPPXJZIENCGNKB-UHFFFAOYSA-N vanadium Chemical compound [V]#[V] GPPXJZIENCGNKB-UHFFFAOYSA-N 0.000 description 2
- 239000011800 void material Substances 0.000 description 2
- 238000012935 Averaging Methods 0.000 description 1
- OKTJSMMVPCPJKN-IGMARMGPSA-N Carbon-12 Chemical compound [12C] OKTJSMMVPCPJKN-IGMARMGPSA-N 0.000 description 1
- 239000004606 Fillers/Extenders Substances 0.000 description 1
- 238000005033 Fourier transform infrared spectroscopy Methods 0.000 description 1
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
- 229910000792 Monel Inorganic materials 0.000 description 1
- 241001178520 Stomatepia mongo Species 0.000 description 1
- 230000003321 amplification Effects 0.000 description 1
- 230000003698 anagen phase Effects 0.000 description 1
- 238000003491 array Methods 0.000 description 1
- 238000000429 assembly Methods 0.000 description 1
- 230000000712 assembly Effects 0.000 description 1
- 238000001636 atomic emission spectroscopy Methods 0.000 description 1
- 238000003763 carbonization Methods 0.000 description 1
- 239000011247 coating layer Substances 0.000 description 1
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- 239000004035 construction material Substances 0.000 description 1
- 230000002596 correlated effect Effects 0.000 description 1
- 230000000875 corresponding effect Effects 0.000 description 1
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- 238000007405 data analysis Methods 0.000 description 1
- 238000009795 derivation Methods 0.000 description 1
- 238000013461 design Methods 0.000 description 1
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- 239000010408 film Substances 0.000 description 1
- 239000012634 fragment Substances 0.000 description 1
- 230000007274 generation of a signal involved in cell-cell signaling Effects 0.000 description 1
- 229910052732 germanium Inorganic materials 0.000 description 1
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical group [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 1
- 229940119177 germanium dioxide Drugs 0.000 description 1
- 229910000449 hafnium oxide Inorganic materials 0.000 description 1
- WIHZLLGSGQNAGK-UHFFFAOYSA-N hafnium(4+);oxygen(2-) Chemical compound [O-2].[O-2].[Hf+4] WIHZLLGSGQNAGK-UHFFFAOYSA-N 0.000 description 1
- 235000003642 hunger Nutrition 0.000 description 1
- 238000001566 impedance spectroscopy Methods 0.000 description 1
- 229910003480 inorganic solid Inorganic materials 0.000 description 1
- 238000009434 installation Methods 0.000 description 1
- 239000004973 liquid crystal related substance Substances 0.000 description 1
- 238000004949 mass spectrometry Methods 0.000 description 1
- 238000004377 microelectronic Methods 0.000 description 1
- 230000001546 nitrifying effect Effects 0.000 description 1
- 238000010899 nucleation Methods 0.000 description 1
- 238000003199 nucleic acid amplification method Methods 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 230000000737 periodic effect Effects 0.000 description 1
- 229920000962 poly(amidoamine) Polymers 0.000 description 1
- 229920002492 poly(sulfone) Polymers 0.000 description 1
- 239000004814 polyurethane Substances 0.000 description 1
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- 239000010970 precious metal Substances 0.000 description 1
- 238000012628 principal component regression Methods 0.000 description 1
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- 229910052723 transition metal Inorganic materials 0.000 description 1
- 150000003624 transition metals Chemical class 0.000 description 1
- 238000010792 warming Methods 0.000 description 1
- 238000004876 x-ray fluorescence Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N27/00—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means
- G01N27/02—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating impedance
- G01N27/04—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating impedance by investigating resistance
- G01N27/14—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating impedance by investigating resistance of an electrically-heated body in dependence upon change of temperature
- G01N27/16—Investigating or analysing materials by the use of electric, electrochemical, or magnetic means by investigating impedance by investigating resistance of an electrically-heated body in dependence upon change of temperature caused by burning or catalytic oxidation of surrounding material to be tested, e.g. of gas
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/3065—Plasma etching; Reactive-ion etching
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Chemical & Material Sciences (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Health & Medical Sciences (AREA)
- Electrochemistry (AREA)
- Health & Medical Sciences (AREA)
- Life Sciences & Earth Sciences (AREA)
- Analytical Chemistry (AREA)
- Biochemistry (AREA)
- Plasma & Fusion (AREA)
- Immunology (AREA)
- Pathology (AREA)
- Investigating Or Analyzing Materials By The Use Of Electric Means (AREA)
- Investigating Or Analyzing Materials By The Use Of Fluid Adsorption Or Reactions (AREA)
- Drying Of Semiconductors (AREA)
- Investigating Or Analyzing Non-Biological Materials By The Use Of Chemical Means (AREA)
Description
1360152 •九、發明說明: V 【發明所屬之技術領域】 本發明係大致關於用以感測標的氣體種類之裝置及方 法,其具有供半導體製程操作中氣體化合物及離子種類之 監測功用。 【先前技術】1360152 • IX. INSTRUCTION DESCRIPTION: V TECHNICAL FIELD OF THE INVENTION The present invention relates generally to apparatus and methods for sensing a target gas species having a monitoring function for gas compounds and ion species in semiconductor processing operations. [Prior Art]
半導體裝置之製造中,矽(Si)及二氧化矽(Si 02)之沉積及 後續之蝕刻係重要的操作步驟,其目前包含8至1 0個步驟 或粗估佔所有製程之25%。每一沉積工具及蝕刻工具必須 進行一周期性清潔程序,有時頻繁至每一次運作皆必須進 行,以確保均一性及一致的薄膜性質。 近來,蝕刻操作中,係於經過一規定時間量而到達蝕刻 終點。過度钱刻(〇 v e r e t c h),其中在清潔姓刻完成後,該 製程氣體繼續流入至反應室,係常見的且導致較長製程周 期、降低工具生命周期及非必要的地球暖化氣體消耗至大 氣中(A n d e r s ο η,B ·; B e h nk e,J .; Berman, M .; Kobeissi,H .; Huling, B.; Langan, J.; Lynn, S - Y., Semiconductor International, October( 1 993 ))。 相似的議題出現在當氮化矽用在半導體裝置結構時氮 化碎材料之银刻。 能使用各種不同的分析技術,諸如FTIR、光學放射光譜 術及離子質譜術監測該蝕刻製程。然而,該等技術趨於昂 貴及由於其複雜性而經常需要熟練操作員。 5 13.60152In the fabrication of semiconductor devices, the deposition of germanium (Si) and germanium dioxide (Si 02) and subsequent etching are important operational steps that currently involve 8 to 10 steps or a rough estimate of 25% of all processes. Each deposition tool and etch tool must be subjected to a periodic cleaning procedure, sometimes as often as every operation, to ensure uniformity and uniform film properties. Recently, in the etching operation, the etching end point is reached after a predetermined amount of time. Excessive money (〇veretch), in which the process gas continues to flow into the reaction chamber after the cleaning of the surname is completed, which is common and leads to a longer process cycle, reduced tool life cycle and unnecessary consumption of global warming gas to the atmosphere. Medium (A nders ο η, B ·; B eh nk e, J .; Berman, M .; Kobeissi, H.; Huling, B.; Langan, J.; Lynn, S - Y., Semiconductor International, October ( 1 993 )). A similar issue arises in the lithography of nitrifying materials when tantalum nitride is used in semiconductor device structures. The etching process can be monitored using a variety of different analytical techniques, such as FTIR, optical emission spectroscopy, and ion mass spectrometry. However, such techniques tend to be expensive and often require skilled operators due to their complexity. 5 13.60152
不fi尤 * 因此提供一可靠的、低成本的氣體感測能力,其將改善 V 用於蝕刻及沉積含矽材料(包含矽、氮化矽及二氧化矽)的 設備之產量及化學效率,其藉由降低及最適化清潔及蝕刻 次數,及因而降低化學品使用、加長設備操作壽命及減少 設備停用時間,將是一重大的進步。Therefore, it provides a reliable, low-cost gas sensing capability that will improve the yield and chemical efficiency of V for etching and depositing materials containing tantalum (including tantalum, tantalum nitride and hafnium oxide). It will be a significant advancement by reducing and optimizing the number of cleaning and etching cycles, and thereby reducing chemical use, lengthening equipment operating life, and reducing equipment downtime.
於 2002 年 10月 17曰提出之美國專利申請案第 1 0/2 7 3,0 3 6 號「APPARATUS AND PROCESS FOR SENSING FLUORO SPECIES IN SEMICONDUCTOR PROCESSING S Y S T E M S」,揭示一種固態氟種類感測裝置及方法,使用 氟反應性金屬絲環繞金屬包裝柱或 KF凸緣上之 Vespel® 聚亞醯胺塊。使用此種金屬絲式感測器之氟種類偵測係根 據監測其與含氟化合物反應所引起之金屬絲中的電阻改 變。為了確認此種金屬絲式感測器的可接受之靈敏度及訊 號雜訊比(signal-to-noise),經由金屬包裝柱或Vespel®聚 亞醯胺塊控制及最適化金屬絲之尺寸及位置,以提供適合 終點偵測之絕對電阻。 存在一種持續之需求去發現及發展改良之絲式感測 器,藉由使用新的構成及結構以進一步增強靈敏度、訊號 雜訊比、及此種氣體感測器之機械可靠度,以及進一步降 低反應時間及其製造成本。 【發明内容】 6 1360152 汆年丨月作修圧· L 硫丨 本發明係大致關於用以感測一環境中標的氣體種類(尤 其是氟氣體種類)之裝置及方法,該環境易於有此種氣體種 類之存在,諸如一周圍環境、來自半導體製程之一氣體流 出氣流等。 一態樣中,本發明係關於一氣體感測器總成,其包含一 氣體感測絲(包含鎳或鎳合金)。"APPARATUS AND PROCESS FOR SENSING FLUORO SPECIES IN SEMICONDUCTOR PROCESSING SYSTEMS", US Patent Application No. 1 0/2 763, No. 3, filed on Oct. 17, 2002, discloses a solid-state fluorine type sensing device and method, Use a fluorine-reactive wire around the metal packaging column or the Vespel® polyamine block on the KF flange. The fluorine species detection using such a wire sensor is based on monitoring the change in electrical resistance in the wire caused by the reaction with the fluorine-containing compound. In order to confirm the acceptable sensitivity and signal-to-noise of such wire sensors, the size and position of the wire are controlled and optimized via metal packaging columns or Vespel® polyamine blocks. To provide absolute resistance for endpoint detection. There is an ongoing need to discover and develop improved wire sensors that further enhance sensitivity, signal-to-noise ratio, and mechanical reliability of such gas sensors, and further reduce them by using new configurations and structures. Reaction time and its manufacturing cost. SUMMARY OF THE INVENTION 6 1360152 汆 丨 作 圧 L L L L L L L L L L L L L L L L L L L L L L L L L L L L L L L L L L L L L L L L L L L L L L L L L L L L L L L L L L L L L L L L L L L L L L L L L L L L L L L L L L L L L L L L L L The presence of a gas species, such as an ambient environment, a gas effluent from a semiconductor process, and the like. In one aspect, the invention is directed to a gas sensor assembly comprising a gas sensing filament (comprising nickel or a nickel alloy).
另一態樣中,本發明係關於一氣體感測器總成,其包含 一氣體感測絲(包含一包封一核心結構之塗層結構),其中 此種塗層結構包含鎳或鎳合金,而其中此種核心結構之特 徵在於其電阻率高於塗層結構之電阻率,且其熱容量低於 塗層結構之熱容量。In another aspect, the invention relates to a gas sensor assembly comprising a gas sensing wire (including a coating structure encapsulating a core structure), wherein the coating structure comprises nickel or a nickel alloy Wherein such a core structure is characterized by a resistivity higher than that of the coating structure and a heat capacity lower than a heat capacity of the coating structure.
較佳地,此種核心結構之特徵在於其電阻率至少高於塗 層結構之電阻率50倍,而其熱容量小於該塗層結構之熱容 量的 3/4。更佳地,此種核心結構之特徵在於其電阻率至 少高於塗層結構之電阻率1000倍,而其熱容量小於該塗層 結構之熱容量的 1 / 2。最佳地,此種核心結構之特徵在於 一電阻率至少ΙΟιηΩ .cm及一熱容量小於2.5J/K.cm3。 在本發明之一特佳具體例,核心結構包含碳化矽。在本發 明之另一較佳具體例,核心結構進一步包含一複合結構, 係由以碳化矽塗覆一碳核心纖維而加以形成。 本發明又另一態樣係關於氣體感測器總成,其包含一氣 7 13.60152 97· 1.卫4 你 ΓΓ-年月f&Preferably, such a core structure is characterized by a resistivity of at least 50 times greater than the resistivity of the coating structure and a heat capacity less than 3/4 of the heat capacity of the coating structure. More preferably, such a core structure is characterized in that its electrical resistivity is at least 1000 times higher than that of the coating structure, and its heat capacity is less than 1 / 2 of the heat capacity of the coating structure. Most preferably, such a core structure is characterized by a resistivity of at least ηιηΩ.cm and a heat capacity of less than 2.5 J/K.cm3. In a particularly preferred embodiment of the invention, the core structure comprises tantalum carbide. In another preferred embodiment of the invention, the core structure further comprises a composite structure formed by coating a carbon core fiber with tantalum carbide. Still another aspect of the present invention relates to a gas sensor assembly comprising a gas 7 13.60152 97· 1. Wei 4 You ΓΓ-years f&
體感測絲(包含鎳或鎳合金),其中此種氣體感測絲係以電 化學薄化技術製造,因而特徵在於一平均直徑不大於 50 微米,較佳不大於25微米,更佳不大於10微米,及最佳 自約0. 1微米至約5微米之範圍。 本發明之一對應態樣係關於一種用以製造一氣體感測 器總成(包含一含鎳之氣體感測絲,其特徵在於一平均直徑 不大於50微米)之方法,其包含步驟:(1)提供氣體感測器 總成,其包含一具有平均直徑不大於50微米的含鎳之氣體 感測絲;及(2)電化學薄化此種含鎳之氣體感測絲一段充足 時間,以便減少此種含鎳之氣體感測絲之平均直徑至 50 微米或更低。Somatosensory wire (including nickel or nickel alloy), wherein the gas sensing wire is manufactured by electrochemical thinning technique and is characterized by an average diameter of no more than 50 microns, preferably no more than 25 microns, more preferably no more than 10 microns, and most preferably in the range of from about 0.1 microns to about 5 microns. A corresponding aspect of the present invention relates to a method for manufacturing a gas sensor assembly (including a nickel-containing gas sensing wire characterized by an average diameter of not more than 50 μm) comprising the steps of: 1) providing a gas sensor assembly comprising a nickel-containing gas sensing wire having an average diameter of not more than 50 microns; and (2) electrochemically thinning the nickel-containing gas sensing wire for a sufficient period of time, In order to reduce the average diameter of such nickel-containing gas sensing wires to 50 microns or less.
本發明之另一態樣係關於包含氣體感測絲(包含鎳銅合 金)之一氣體感測器總成。較佳地,此種鎳銅合金含有自約 I 0 %至 9 0 %鎳及自約 1 0 %至 9 0 %銅。更佳地,此種鎳銅合 金進一步包含自約10 %至90 %之重量的鋁。此種鎳銅合金 亦可包含其他耐氟金屬成分,包含但不受限於鈦、釩、鉻、 錳、鈮、鉬、釕、鈀、銀、銥及鉑。 本發明又另一態樣係關於一氣體感測器總成,包含一含 鎳之氣體感測絲,該氣體感測絲具有一多孔性表面,具有 約2 0 %至約8 0 %總空隙度,及較佳為6 0 %總空隙度。較佳 8 1360152 97 1.14^ 年月日’:''广 无i 地,此種氣體感測絲之此種多孔性表面特薇~在_____於 > 個開i 性孔狀結構。 本發明另一態樣係關於上述之氣體感測器總成,其進一 步包含與氣體感測絲耦接之構件,用以偵測此種氣體感測 絲於接觸一標的氣體種類時之至少一性質的變化,且回應 性地產生代表該標的氣體種類之存在之輸出信號。 本發明之另一態樣係關於一氣體感測器.總成,其包含上 述之氣體感測絲及一支撐結構,其中該氣體感測絲係以一 獨立式方式安裝在此種支撐結構上。Another aspect of the invention pertains to a gas sensor assembly comprising a gas sensing filament (including nickel-copper alloy). Preferably, the nickel-copper alloy contains from about 0% to about 90% nickel and from about 10% to about 90% copper. More preferably, the nickel-copper alloy further comprises from about 10% to about 90% by weight of aluminum. Such nickel-copper alloys may also contain other fluorine-tolerant metal components including, but not limited to, titanium, vanadium, chromium, manganese, lanthanum, molybdenum, niobium, palladium, silver, iridium, and platinum. Still another aspect of the invention relates to a gas sensor assembly comprising a nickel-containing gas sensing wire having a porous surface having from about 20% to about 80% total The void fraction, and preferably 60% of the total void fraction. Preferably 8 1360152 97 1.14^ Year of the month ': ''wide no such ground, such a porous surface of this gas sensing wire is in the _____ in > open-hole structure. Another aspect of the present invention relates to the gas sensor assembly described above, further comprising: a member coupled to the gas sensing wire for detecting at least one of the gas sensing wires contacting a target gas species A change in properties and responsively produces an output signal representative of the presence of the target gas species. Another aspect of the invention relates to a gas sensor assembly comprising the gas sensing wire described above and a support structure, wherein the gas sensing wire is mounted on the support structure in a freestanding manner .
本發明又另一態樣係關於上述之氣體感測器總成’以感 測關係配置至一製程室(易於存在有一或多標的氟種類), 其中該氣體感測絲被安裝在一耐氟之支撐結構上及耦接至 用以偵測此種氣體感測絲於接觸一標的氟種類時之至少一 性質的變化,且回應性地產生代表該標的氟種類之存在之 輸出信號之構件。 _ 本發明之另一態樣係關於上述之氣體感測器總成’其建 構及配置以監測自半導體製造工廠之流出物或衍生自流出 物之流體,其中自該處衍生之流出物或流體係易於包含氟 種類,及其中此種氣體感測器總成進一步包含用以偵測此 種氣體感測絲於接觸該氟種類時之至少一性質的變化,且 回應性地產生指示此種氟種類之存在之輸出信號之構件。 本發明又另一態樣相關一種用以監測流體場所其中一 9 1360152Still another aspect of the present invention relates to the gas sensor assembly described above being disposed in a sensing relationship to a process chamber (easily present with one or more standard fluorine species), wherein the gas sensing wire is mounted to a fluorine resistant The supporting structure is coupled to a member for detecting a change in at least one property of the gas sensing wire in contact with a target fluorine species, and responsively generating a component representing an output signal of the presence of the target fluorine species. Another aspect of the invention relates to a gas sensor assembly described above that is constructed and configured to monitor an effluent from a semiconductor manufacturing plant or a fluid derived from an effluent, wherein an effluent or stream derived therefrom The system is susceptible to containing a fluorine species, and wherein the gas sensor assembly further comprises a change for detecting at least one property of the gas sensing filament in contact with the fluorine species, and responsively producing an indication of such fluorine The component of the output signal of the existence of the species. Still another aspect of the present invention relates to a fluid for monitoring one of the places 1 1360152
標的氣體種類之存在之方法,該方法包含 於該流體場所暴露流體至如上述之氣體感測器總成; 監測此種氣體感測器總成之氣體感測絲的至少一性 質;及 當該氣體感測絲展示在其至少一性質的變化,回應性地 產生一輸出信號,指示該流體場所中該標的氣體種類之存 在,或該流體場所中該標的氣體種類之濃度的變化。a method of presenting a target gas species, the method comprising: exposing a fluid to the gas sensor assembly as described above; monitoring at least one property of the gas sensing wire of the gas sensor assembly; and when The gas sensing wire exhibits a change in at least one property thereof that responsively produces an output signal indicative of the presence of the target gas species in the fluid site or a change in the concentration of the target gas species in the fluid site.
本發明又另一態樣相關由一或多個氣體感測絲所形成 之一延長式氣體感測器元件,此種延長式氣體感測器元件 包含二電性連結端及一縱軸,其中感測器元件之該縱軸實 質垂直於其之二電性連接端所界定之一線。Yet another aspect of the invention relates to an extended gas sensor component formed from one or more gas sensing wires, the elongated gas sensor component comprising a second electrical connection end and a longitudinal axis, wherein The longitudinal axis of the sensor element is substantially perpendicular to a line defined by its two electrical connections.
此種延長式氣體感測器元件可包含任何數目之氣體感 測絲及具有任何適當形狀或構造,只要其縱軸實質垂直於 其之二電性連接端所界定之一線。本發明較佳具體例,延 長式氣體感測器元件係由二氣體感測絲在其之第一端附著 一起而形成,及具有一叉骨形狀。 此種延長式氣體感測器元件較佳但非必要包含一氣體 敏感塗層包封核心結構,其中核心結構具有一電阻率高於 氣體敏感塗層之電阻率,及一熱容量低於氣體敏感塗層之 熱容量。含鎳塗層對氟氣體種類特別敏感,及因此在本發 明之一特佳具體例,延長式氣體感測器元件包含一含鎳塗Such extended gas sensor elements can comprise any number of gas sensing wires and have any suitable shape or configuration as long as the longitudinal axis thereof is substantially perpendicular to one of the two electrical connections. In a preferred embodiment of the invention, the elongated gas sensor element is formed by two gas sensing wires attached together at a first end thereof and having a wishbone shape. Preferably, such an extended gas sensor component comprises a gas-sensitive coating encapsulating core structure, wherein the core structure has a resistivity higher than that of the gas-sensitive coating, and a heat capacity is lower than the gas-sensitive coating The heat capacity of the layer. The nickel-containing coating is particularly sensitive to the type of fluorine gas, and thus in a particularly preferred embodiment of the invention, the extended gas sensor element comprises a nickel-containing coating
FO 13.60152 S7。1· 14 1 下 年月曰\' t _ - —ff" _铜兀 • 層包封一核心結構,此種核心結構特徵在於比此種含鎳塗 , 層有較高電阻率及一較低熱容量。 本發明另一態樣相關氣體感測器總成,.其包含至少一上 述延長式氣體感測器元件安裝在一支撐結構,其中此種支 撐結構包含一表面用以安裝延長式氣體感測器元件之二電 性連接端。 本發明另一態樣係關於一種用以監測流體場所其中一FO 13.60152 S7.1· 14 1 Next year 曰 ' ' ' ' _ 层 层 层 层 层 层 层 层 层 层 层 层 层 层 层 层 层 层 层 层 层 层 层 层 层 层 层 层 层 层 层 层 层 层 层 层 层 层 层 层And a lower heat capacity. Another aspect of the present invention relates to a gas sensor assembly comprising at least one of the above elongated gas sensor elements mounted on a support structure, wherein the support structure includes a surface for mounting an extended gas sensor The second electrical connection of the component. Another aspect of the invention relates to a method for monitoring a fluid site
標的氣體種類之存在的方法,該方法包含: 暴露該流體場所之流體給上述之氣體感測器總成; 監測此種氣體感測器總成之延長式氣體感測器元件的 至少一性質;及A method of presenting a target gas species, the method comprising: exposing a fluid of the fluid site to the gas sensor assembly; monitoring at least one property of the gas sensor component of the gas sensor assembly; and
當該延長式氣體感測器元件展示其至少一性質的變 化,回應性地產生一輸出信號,指出該流體場所中該標的 氣體種類之存在,或該流體場所中該標的氣體種類之濃度 的變化。 本發明又一態樣係關於一種用以製造具有叉骨形狀之 延長式氣體感測器元件的方法,包含步驟: (a) 將一對氣體感測絲並排對齊;及 (b) 於該對氣體感測絲之第一端連接,但將該對氣體感測 絲之相對第二端彼此分開,其中該對氣體感測絲之分開的 相對第二端形成該叉骨形狀氣體感測器元件之二電性連接 11 13.60152 端。 yTTiriT 年月曰 修ιΕ ·· \铺兄i 或者,此種叉骨形狀氣體感測器元件能以包含以下步驟 之方法形成: (a) 將一對絲並排對齊;及 (b) 於該對絲之第一端連接,但將該對絲之相對第二端彼 此分開,以至於形成一叉骨形狀之前驅物結構;及 (c) 形成一氣體敏感塗層在該叉骨形狀之前驅物結構上。When the extended gas sensor element exhibits a change in at least one property thereof, responsively produces an output signal indicating the presence of the target gas species in the fluid location, or a change in concentration of the target gas species in the fluid location . A further aspect of the invention relates to a method for manufacturing an elongated gas sensor element having a wishbone shape, comprising the steps of: (a) aligning a pair of gas sensing wires side by side; and (b) the pair a first end of the gas sensing wire is coupled, but the opposite second ends of the pair of gas sensing wires are separated from each other, wherein the separate second ends of the pair of gas sensing wires form the wishbone shaped gas sensor element The second electrical connection 11 13.60152 end. yTTiriT 曰 Ε Ε · · · · 或者 或者 或者 或者 或者 或者 或者 或者 或者 或者 或者 或者 或者 或者 或者 或者 或者 或者 或者 或者 或者 或者 或者 或者 或者 或者 或者 或者 或者 或者 或者 或者 或者 或者 或者 或者 或者 或者 或者 或者 或者 或者 或者 或者 或者The first ends of the wires are joined, but the opposite ends of the pair of wires are separated from one another such that a wishbone shaped precursor structure is formed; and (c) a gas sensitive coating is formed prior to the shape of the wishbone Structurally.
本發明又一態樣係關於一種氣體感測器總成,其係以感 測關係配置至一製程室(易於存在有一或多標的氟種類), 其中該氣體感測器總成包含一含鎳之氣體感測器元件,被 安裝在一支撐結構上及耦接至用以偵測該氣體感測器元件 於接觸一標的氟氣體種類時之至少一性質的變化,且回應 性地產生代表該標的氟氣體種類之存在之輸出信號之構 件,其中此種含鎳之氣體感測器元件具有一縱軸,其經定 向垂直於或實質垂直於該支撐結構之安裝表面。 對於此處所使用「氟種類」一詞係意圖寬廣建構以涵蓋 所有含氟材料,包含而不限制,氣體氟化合物、以原子及 雙原子(F2)形式之氟本身、氟離子及含氟離子種類。氟種 類可例如包含種類諸如NF3、SiF4、C2F6、HF、F2、COF2、 C1F3、IF3等,及其之活性含氟種類(集合標示如F’)包含離 子化片段、電漿形式等。 本發明之其他態樣、特點及具體例由明確之揭示及後附 12 1360152 Ά < ~~ ' -------------- JL 1. 14 /: 年月:τ; · ' ^ * 的申請專利範圍將更完全明顯》 --~~ - 【實施方式】A further aspect of the present invention relates to a gas sensor assembly that is configured in a sensing relationship to a process chamber (easily present with one or more standard fluorine species), wherein the gas sensor assembly comprises a nickel-containing component a gas sensor component mounted on a support structure and coupled to detect a change in at least one property of the gas sensor component in contact with a target fluorine gas species, and responsively generating the representative A member of the output signal of the presence of the target fluorine gas species, wherein the nickel-containing gas sensor element has a longitudinal axis that is oriented perpendicular or substantially perpendicular to the mounting surface of the support structure. The term "fluorine type" as used herein is intended to broadly encompass all fluorine-containing materials, including, without limitation, gaseous fluorine compounds, fluorine itself in atomic and diatomic (F2) form, fluoride ion and fluoride ion species. . The fluorine species may, for example, comprise species such as NF3, SiF4, C2F6, HF, F2, COF2, C1F3, IF3, etc., and active fluorine species thereof (collection designation such as F') comprising ionized fragments, plasma forms, and the like. Other aspects, features, and specific examples of the present invention are disclosed and appended hereinafter. 1 1360152 Ά < ~~ ' -------------- JL 1. 14 /: Year: τ · ' ^ * The scope of application for patents will be more completely obvious ---~~ - [Implementation]
於 2002 年 10月 17曰提出之美國專利申請案第 1 0/2 7 3,0 3.6 號「APPARATUS AND PROCESS FOR SENSING FLUORO SPECIES IN SEMICONDUCTOR PROCESSING SYSTEMS j 及於 2001 年 7月 24 日獲頒美國專利第 6,265,222 號「MICRO-MACHINED THIN FILM HYDROGEN GAS. SENSOR, AND METHOD FO MAKING AND USINGU.S. Patent Application No. 1 0/2 7 3,0 3.6, issued October 17, 2002, "APPARATUS AND PROCESS FOR SENSING FLUORO SPECIES IN SEMICONDUCTOR PROCESSING SYSTEMS j and was awarded the US Patent on July 24, 2001. 6,265,222 "MICRO-MACHINED THIN FILM HYDROGEN GAS. SENSOR, AND METHOD FO MAKING AND USING
THE SAME」係為了所有目的,參考其全部併入於此。 其後以特定參考至運用在半導體製程控制更充分描述 本發明,可了解本發明之功用不因此而受限制,而更延伸 至廣泛各種不同的其他使用及運用,包含而不受限制於生 命安全系統、房間或周圍環境監測操作及其他工業之部 署,以及消費市場氣體感測運用。 如眾所皆知,氟種類與大部分金屬反應以形成具有高的 且有時為混合氧化態之化合物(無機固體氟化物,化學與物 理,美國學術出版社,1985年,EdP.Hagenmuller)。許多 過渡金屬及貴重金屬(例如包含,但不限制為鎳、銅、鋁、 欽、飢、絡、猛、妮、钥、釘、纪、銀、銀及韵)與此種氟 種類接觸即迅速地形成各種不同的非揮發性氟化合物。 因此本發明使用氟反應金屬絲。藉監測此種金屬絲由其 與氟種類之反應引起其性質之改變,可以量測在特別氣體 13 13.60152 ρπ.14 年月i 環境之一或更多目標氟種類之存在及/或濃度 體室清潔製程排出之流出氣流。 具體而言,觀察氟反應金屬絲電阻增加,當其被放置在 易受氟種類污染之氣體環境,發現其為環境中此種氟種類 之存在及濃度之良好指標。因為金屬絲具有較氣體環境高 的熱傳導性,藉金屬絲及氟種類之間的放熱反應而產生之 熱的顯著部分引導至金屬絲,引起此種金屬絲中之溫度增 加,其跟著升高此種金屬絲之電阻。 具體而言,本發明係關於含鎳絲之使用,其含有純鎳或 鎳合金,在氣體感測器總成用於目標氟種類之偵測。THE SAME is hereby incorporated by reference in its entirety for all purposes. The invention will be described more fully hereinafter with reference to the application of semiconductor process control, and it is understood that the utility of the invention is not limited thereby, but extends to a wide variety of other uses and applications, including without limitation to life safety. System, room or ambient monitoring operations and other industrial deployments, as well as consumer market gas sensing applications. As is well known, fluorine species react with most metals to form compounds with high and sometimes mixed oxidation states (Inorganic Solid Fluoride, Chemistry and Physics, American Academic Press, 1985, EdP. Hagenmuller). Many transition metals and precious metals (such as, but not limited to, nickel, copper, aluminum, chin, hunger, collateral, fierce, ni, key, nail, ki, silver, silver, and rhyme) are in direct contact with such fluorine species. Various non-volatile fluorine compounds are formed in the ground. The present invention therefore uses a fluorine-reactive wire. By monitoring the change in the properties of such a wire caused by its reaction with a fluorine species, it is possible to measure the presence and/or concentration of one or more target fluorine species in a particular gas 13 13.60152 ρπ.14 Clean the effluent stream from the process. Specifically, the increase in the resistance of the fluorine-reactive wire was observed, and when it was placed in a gas environment susceptible to fluorine species, it was found to be a good indicator of the presence and concentration of such fluorine species in the environment. Because the wire has a higher thermal conductivity than the gaseous environment, a significant portion of the heat generated by the exothermic reaction between the wire and the fluorine species is directed to the wire, causing an increase in temperature in the wire, which in turn increases The resistance of a wire. In particular, the invention relates to the use of nickel-containing filaments comprising pure nickel or a nickel alloy for use in the detection of target fluorine species in a gas sensor assembly.
本發明之一較佳具體例使用氣體感測絲,其包含一氟反 應塗層結構,其含有鎳或鎳合金,而此種塗.層..結構包一封一 高電阻率、低熱質量核心結構,其特徵在於電阻率高於塗 層結構之電阻率,及一熱容量(例如,比熱Cp與密度D之 乘積)低於塗層結構之熱容量。 較佳地,此種核心結構之特徵在於電阻率其至少5 0倍 大於塗層結構之電阻率,及一熱容量小於3/4塗層結構。 更佳地,此種核心結構特徵在於電阻率其至少1 〇 〇 〇倍大於 塗層結構之電阻率,及一熱容量小於1 /2塗層結構。最佳 地,此種核心結構之特徵在於電阻率其至少1 〇 m Ω . c m 及熱容量小於2.5 J/K. cm3。 14 1360152 年月 __ 彻尤 許多材料之組合可供形成此種塗層結構ϋ心。此 • 處提供適用形成塗層結構和核心結構之材料的例子,不是 用來限制本發明之寬廣範圍,其包含:(ι)純鎳用作塗層結 構與鎳合金(諸如蒙耐(Monel),一種鎳銅合金)用作核心結 構;(2)純鎳或鎳合金用作塗層結構與碳化矽用作核心結 構;(3 )純鎳或鎳合金用作塗層結構與碳用作核心結構等。A preferred embodiment of the present invention uses a gas sensing wire comprising a fluorine-reactive coating structure comprising nickel or a nickel alloy, and the coating layer comprises a high resistivity, low thermal mass core The structure is characterized in that the resistivity is higher than the resistivity of the coating structure, and a heat capacity (for example, the product of the specific heat Cp and the density D) is lower than the heat capacity of the coating structure. Preferably, such a core structure is characterized in that the resistivity is at least 50 times greater than the resistivity of the coating structure, and a heat capacity is less than 3/4 of the coating structure. More preferably, the core structure is characterized by a resistivity of at least 1 〇 〇 〇 greater than the resistivity of the coating structure and a thermal capacity of less than 1 /2 coating structure. Most preferably, such a core structure is characterized by a resistivity of at least 1 〇 m Ω . c m and a heat capacity of less than 2.5 J/K·cm 3 . 14 1360152 Months __ Cheyue A combination of materials is available to form this coating structure. This is an example of a material suitable for forming a coating structure and a core structure, and is not intended to limit the broad scope of the invention, including: (i) pure nickel used as a coating structure and a nickel alloy (such as Monel) , a nickel-copper alloy) is used as the core structure; (2) pure nickel or nickel alloy is used as the coating structure and tantalum carbide is used as the core structure; (3) pure nickel or nickel alloy is used as the coating structure and carbon as the core Structure, etc.
碳化矽特佳用以形成本發明之核心結構,因為碳化矽高 電阻率(通常大於 10 ιηΩ . cm)及低熱容量(通常小於 2.5 J/K · cm3)進一步增強含鎳絲感測器之信號強度及應答性而 不會引起顯著的熱損失。再者,碳化矽可耐腐蝕性氟電漿 之攻擊,雖然其非該包封核心結構之必要特色,但是當使 用金屬絲於腐蝕性氣體環境用以偵測氟種類,有利於改良 機械強度及可靠度。Carbide is particularly useful for forming the core structure of the present invention because the high electrical resistivity (usually greater than 10 ιηΩ·cm) and low heat capacity (usually less than 2.5 J/K·cm3) further enhance the signal of the nickel-containing wire sensor. Strength and responsiveness without causing significant heat loss. Furthermore, the attack of the cerium carbide corrosion-resistant fluorine plasma, although it is not necessary to encapsulate the core structure, when the wire is used in a corrosive gas environment to detect the fluorine species, it is advantageous to improve the mechanical strength and Reliability.
圖1例示性地顯示根據本發明之一具體例的氣體感測絲 1之橫剖面視圖,氣體感測絲1包含一核心結構6,其由冷 •碳化矽製成且被由使用鎳銅合金(蒙耐)製成之塗層 2包 封。 包含高電阻率、低熱質量材料之多數層的複合材料亦能 用以形成本發明之絲感測器的核心結構。適合的核心材料 之不同組合與構成能使用於進一步改良絲感測器的操作。 本發明之一例子中,基於鎳之薄層形成作為氣體感測層, 碳化矽纖維能被使用。 圖 2顯示碳化矽纖維 1 0之部分橫剖面視圖。此一碳化 15Fig. 1 exemplarily shows a cross-sectional view of a gas sensing wire 1 according to an embodiment of the present invention, the gas sensing wire 1 comprising a core structure 6, which is made of cold tantalum carbide and is made of nickel-copper alloy (Mongo) made of coating 2 encapsulation. Composite materials comprising a plurality of layers of high resistivity, low thermal mass materials can also be used to form the core structure of the wire sensor of the present invention. Different combinations and configurations of suitable core materials can be used to further improve the operation of the silk sensor. In one example of the present invention, a thin layer of nickel is formed as a gas sensing layer, and a cerium carbide fiber can be used. Figure 2 shows a partial cross-sectional view of the niobium carbide fiber 10 . This carbonization 15
13.60152 矽具有自約7 8微米至約1 4 0微米之總直徑,其包含碳 -12被包圍在点·碳化矽護套16及富含碳表面18内。該 碳化矽纖維具有之熱容量(Cp乘以D)約為鎳之熱容量 半,且对氟種類。 為了定量量測信號強度及含有如上述含鎳絲之氣 測器總成的應答性,來自半導體清潔室之含氟種類之 氣體首先與此一含鎳絲之氣體感測器總成接觸,以產 組感測器信號輸出。然後此種流出氣體通過一殘氣分 (RGA)單元,以產生一組控制輸出。疊置由本發明之 感測器總成所產生之圖形輪出和由 RGA單元產生之 輸出作為時間的函數,可看出本發明之氣體感測器總 相對信號強度及應答性。 圖3之上部顯示由包含鎳塗層S i C感氟絲之氣體感 總成產生之信號輸出對時間之關係,及圖3之下部顯 RGA單元產生之控制輸出對時間之關係。 另一方面,圖4顯示來自使用一鎳絲之氣體感測器 之信號輸出對時間之關係與由 RGA單元產生之控制 對時間之關係的比較。雖然含鎳塗層SiC絲之氣體感 總成顯示比使用鎳絲者具較佳靈敏度及較短應答時間 述二種氣體感測器總成皆顯示高靈敏度及高應答性。 為進一步提升本發明含鎳絲感測器之性能,根據上 提供之方程式(19),期望一高As/Ac比。 核心 SCS 的一 體感 流出 生一 析儀 氣體 控制 成之 測器 示由 總成 輸出 測器 ,上 文中 16 13.60152 ΨΓΤΓΤΓ~7^ 年月 Μ ' 高 As/Ac比能藉於平均外徑低於5 00微米 絲有效地達成,較佳低於150微米或低於50微米,及最佳 在約 0. 1微米至約 3 0微米之範圍,及平均長度大於1公 分,較佳超過5公分,及最佳超過10公分,作為性能與製 造之容易性之間的平衡。 然而,具有直徑約或低於 5 0微米之絲極易碎且難以處 理,使得具有此種小絲的氣體感測器總成之製造幾乎不可 能。 本發明對此一問題提供一解決方法,首先藉製造使用一 含鎳之氣體感測絲之氣體感測器總成,該含鎳之氣體感測 絲具有一平均直徑大於5 0微米’及然後電化學薄化此種氣 體感測絲以降低其平均直徑來增加 As/Ac比。此一情況 下,該薄化製程係在一已經被併入該氣體感測器總成之氣 體感測絲上進行,及薄化後無需對氣體感測絲作進一步處 理,因此顯著地降低該超薄絲之損壞的風險。13.60152 The crucible has a total diameter of from about 7 8 microns to about 140 microns, which comprises carbon-12 surrounded by a tantalum carbide sheath 16 and a carbon-rich surface 18. The tantalum carbide fiber has a heat capacity (Cp multiplied by D) which is about half the heat capacity of nickel and is a fluorine species. In order to quantitatively measure the signal intensity and the responsiveness of the gas detector assembly containing the nickel-containing wire as described above, the fluorine-containing gas from the semiconductor clean room is first contacted with the nickel-containing gas sensor assembly to Produce the sensor signal output. This effluent gas is then passed through a residual gas (RGA) unit to produce a set of control outputs. The combination of the pattern rotation produced by the sensor assembly of the present invention and the output produced by the RGA unit as a function of time shows the overall relative signal strength and responsiveness of the gas sensor of the present invention. The upper portion of Figure 3 shows the relationship of the signal output versus time produced by a gas-sensing assembly containing a nickel-coated SiC-sensitive fluorine filament, and the control output produced by the RGA unit in the lower portion of Figure 3 versus time. On the other hand, Figure 4 shows a comparison of the signal output versus time from a gas sensor using a nickel wire and the control versus time produced by the RGA unit. Although the gas sensation of the nickel-coated SiC wire shows better sensitivity and shorter response time than the use of the nickel wire, both gas sensor assemblies exhibit high sensitivity and high responsiveness. To further enhance the performance of the nickel-containing wire sensor of the present invention, a high As/Ac ratio is desired in accordance with equation (19) provided above. The integrated sense of the core SCS is controlled by a gas detector. The detector is shown by the assembly output detector. The above 16 13.60152 ΨΓΤΓΤΓ~7^ Μ Μ 'High As/Ac ratio can be borrowed from the average outer diameter below 5 00 micron filaments are effectively achieved, preferably less than 150 microns or less than 50 microns, and most preferably in the range of from about 0.1 microns to about 30 microns, and an average length of greater than 1 centimeter, preferably more than 5 centimeters, and The best is more than 10 cm as a balance between performance and ease of manufacture. However, filaments having a diameter of about or less than 50 microns are extremely fragile and difficult to handle, making the manufacture of a gas sensor assembly having such filaments almost impossible. The present invention provides a solution to this problem by first fabricating a gas sensor assembly using a nickel-containing gas sensing wire having an average diameter greater than 50 microns' and then Electrochemical thinning of such gas sensing filaments reduces their average diameter to increase the As/Ac ratio. In this case, the thinning process is performed on a gas sensing wire that has been incorporated into the gas sensor assembly, and after thinning, there is no need to further process the gas sensing wire, thereby significantly reducing the The risk of damage to ultra-thin wires.
圖5顯示一部分薄化之鎳絲2 2,其具有一原來平均直徑 約1 0 0 -1 1 0微米。此種鎳絲 2 2之一部分經電化學薄化之 後,其平均直徑有效地降低至約3 5 - 4 5微米。 藉形成一具有多孔性表面之含鎳絲亦能達成高 As/Ac 比,其具有增加絲感測器之表面積As而不包含其之橫剖面 面積Ac之功用。 圖6圖解顯示一包含一相對緊密核心26及一多孔性表 面2 8之含鎳絲2 5。含鎳絲之多孔性表面可以二階段式電 17 1360152Figure 5 shows a portion of the thinned nickel wire 2 2 having an original average diameter of about 1 0 0 - 1 10 μm. After a portion of such a nickel wire 2 2 is electrochemically thinned, its average diameter is effectively reduced to about 3 5 - 45 μm. A high As/Ac ratio can also be achieved by forming a nickel-containing wire having a porous surface, which has the function of increasing the surface area As of the wire sensor without including the cross-sectional area Ac thereof. Figure 6 illustrates a nickel-containing wire 25 comprising a relatively tight core 26 and a porous surface 28. The porous surface containing nickel wire can be used in two-stage electricity 17 1360152
年月C/T — 辦无 鍍製程提供,其中,於起始播種階段,在一基ϋ諸如一核~ 心結構)上之鎳或鎳合金之電鍍係以相對低的速率進行,以 至於允許改良介於鎳或錄合金電鍍層與在下面的基板之間 的連結,及其中,於隨後之成長階段,電鍍係以顯著較高 的速率進行,以至於形成具有微米孔隙或奈米孔隙的粗糙 電鍍表面。圖7顯示一形成在非多孔性、緊密基底32上之 奈米孔隙之鎳塗層3 4之S Ε Μ微影。Year C/T — provided by the unplated process, in which the plating of nickel or nickel alloy on a basis such as a core-heart structure at the initial seeding stage is carried out at a relatively low rate, so that Improving the bond between the nickel or the alloy plating layer and the underlying substrate, and in the subsequent growth phase, the plating is performed at a significantly higher rate to form a roughness having micropores or nanopores Plating surface. Figure 7 shows an S Ε Μ lithography of a nickel coating 34 formed on a non-porous, tight substrate 32 nanopore.
或者,多孔性鎳塗層能藉使用液晶模板自適當界面活性 劑形成。此技術係特別適用於形成開放孔結構,其最大化 多孔性鎳塗層之氟可接近的面積,及因此進一步改良該絲 感測器之靈敏度。圖8顯示多孔性鎳塗層44之SEM微影, 其特徵在於開放孔結構及具有厚度約4.93微米,形成在一 緊密碳化矽基板 42上。多孔性鎳塗層之特徵可在於,例 如,當以X射線螢光分析量測時,總孔隙度為60% 。 φ 本發明含鎳之氣體感測絲之性能能藉由使用各種不同 的鎳銅合金而進一步提升,諸如蒙耐合金,其特徵在於其 電阻甚至高於純鎳。 較佳地,此種鎳銅合金含有自約10重量%至90重量% 的鎳及自約10重量%至90重量%的銅。此種鎳銅合金可 進一步包含其他耐氟金屬,諸如鋁、鈦、釩、鉻、錳、鈮、 翻、釕、把、銀、銀及韵。 上述任一本發明各種不同具體例能個別實施或聯合使 用,以提供一具有不同的材料及結構特徵,而適用於各種 18 1360152Alternatively, the porous nickel coating can be formed from a suitable surfactant using a liquid crystal template. This technique is particularly useful for forming open cell structures that maximize the fluorine accessible area of the porous nickel coating and thus further improve the sensitivity of the wire sensor. Figure 8 shows an SEM lithography of a porous nickel coating 44 characterized by an open cell structure and having a thickness of about 4.93 microns formed on a compact tantalum carbide substrate 42. The porous nickel coating may be characterized, for example, by a total porosity of 60% when measured by X-ray fluorescence analysis. φ The properties of the nickel-containing gas sensing filament of the present invention can be further enhanced by the use of various nickel-copper alloys, such as Mons alloys, which are characterized by an electrical resistance even higher than that of pure nickel. Preferably, such a nickel-copper alloy contains from about 10% to about 90% by weight nickel and from about 10% to about 90% by weight copper. The nickel-copper alloy may further comprise other fluorine-resistant metals such as aluminum, titanium, vanadium, chromium, manganese, niobium, turn, niobium, tantalum, silver, silver and rhyme. Any of the various specific examples of the invention described above can be used individually or in combination to provide a material and structural feature that is suitable for use in a variety of 18 1360152
不 * 明 氟 氣 體 標 之 獨 a 統 併 合 此 ϋ 同系統及應用之氣體感測器絲之族群。須認識到對本發 氟種類感測元件之特定材料及構成的選擇可根據供監測 種類的存在之氤流的特徵,及特別是根據被監測之標的 體種類或其他存在於被監測的氣體。 本發明氣體感測絲能容易地以任何形式安裝而形成氣 感測器總成,其亦可包含用以偵測此氣體感測絲當其與 的氣體種類接觸的變化之構件,及回應性地指示此變化 輸出信號產生之構件。具體而言,氣體感測絲可以各種 立式形式安裝至耐氟支撐結構’如於2002年10月17 提出之美國專利申請案第10/273,036號「半導體製程系 中氟種類之感測裝置及方法」揭示,其之整體内容在此 入以作為參考。獨立式氣體感測絲能以任何適合形式整 作為裝置封裝之一部分,額外的保護或絕緣層可施加至 裝置封裝,用以增進總裝置封裝耐含氟標的化合物之腐The group of gas sensor wires of the same system and application is not combined with the same. It will be appreciated that the selection of the particular material and composition of the fluorine-emitting sensing element may be based on the characteristics of the turbulence present for the type of monitoring, and in particular, depending on the type of body being monitored or otherwise present in the gas being monitored. The gas sensing wire of the present invention can be easily mounted in any form to form a gas sensor assembly, which can also include components for detecting changes in the contact of the gas sensing wire with the gas species, and responsiveness. Indicates the component of this change output signal generation. In particular, the gas sensing wire can be mounted in a variety of vertical forms to the fluorine-resistant support structure, as described in U.S. Patent Application Serial No. 10/273,036, issued to the entire disclosure of The method discloses that the entire content thereof is hereby incorporated by reference. The freestanding gas sensing wire can be part of the device package in any suitable form, and an additional protective or insulating layer can be applied to the device package to enhance the corrosion of the fluorine-containing compound of the overall device package.
晶 種 使 作 緣 上 佳 將獨立式氣體感測絲整合至標準微電子裝置封裝諸如 片載具封裝之能力,使本發明氣體感測器裝置能構成各 不同的單一元件裝置結構,或者作為多元件陣列,例如 用不同的金屬結構、不同的幾何結構或在不同溫度下操 之多餘的結構,以提升總感測裝置之氣體偵測能力。 一較佳具體例,本發明之氣體感測絲係支撐在一耐氟凸 材料,例如由Vespel®聚亞醯胺、鋁或鎳形成之KF凸緣 。在本發明各種實施例中,Vesp el®聚亞醯胺係構造之較 的聚亞醯胺材料,但須知其他聚亞醯胺或聚合物(例如, 19 13.60152The ability of the seed crystal to integrate the freestanding gas sensing wire into a standard microelectronic device package such as a wafer carrier package enables the gas sensor device of the present invention to be constructed as a single unit device structure, or as a plurality of The array of components, for example, with different metal structures, different geometries or redundant structures operating at different temperatures to enhance the gas detection capability of the total sensing device. In a preferred embodiment, the gas sensing wire of the present invention is supported on a fluorine-resistant convex material such as a KF flange formed of Vespel® polyamine, aluminum or nickel. In various embodiments of the invention, the Vesp el® polyamidolide is a relatively small polyamine material, but other polyamines or polymers are known (e.g., 19 13.60152).
聚硬)之構造材料可選擇地使用。 圖9A與9B闡述一氣體感測器陣列70,其包含Vespel® 聚亞醯胺凸緣74支撐Vespel®聚亞醯胺塊76及二組鎳塗 碎壓合電針78至其上,以懸掛其結構上可相同或不相同之 二個鎳塗佈之碳化矽氣體感測絲7 2 »The construction material of the polyhard) can be optionally used. Figures 9A and 9B illustrate a gas sensor array 70 comprising a Vespel® polyamido flange 74 supporting a Vespel® polyamine block 76 and two sets of nickel-crushed electro-acupuncture needles 78 thereon for suspension Two nickel-coated niobium carbide gas sensing wires 7 2 of the same or different in structure
鎳塗佈之碳化矽氣體感測絲之獨立式結構允許其同時 作為氟感測元件及加熱源(例如傾向於電阻加熱或其他加 熱模式),以及最大化感測面積,作為此絲之高表面積對體 積特徵之結果。氣體感測絲及相關封裝之整合設計消除於 感測環境中由強勢的氟化氣體種類化學攻擊之問題’藉以 達成標準矽微機電系統(MEM S)結構的領域之基礎進展。 因此本發明以一態樣提供一群新穎之固態絲氣體感測 器,其能以感測關係耦接至製程室,該製程室例如是半導 體製程室,且能藉由為此種絲感測器適當選擇材料及結構 而達成各種不同的靈敏度及應答性。 本發明以另一態樣提供一新穎絲為主之氣體感測器元 件,其拉長形狀及具有二電性連接端與一縱軸。此種氣體 感測器元件之二電性連接端界定一線,氣體感測器元件之 縱軸係實質垂直至該線。 對於給定構成之一絲為主之氣體感測器,介於其縱向尺 寸(L)及其橫向尺寸(D)之外觀比對其信號強度及應答時間 有顯著的影響。一般而言,較大的L/D比’有較高信號強 度及較短的應答時間。 由於本發明之新穎氣體感測器元件之縱軸係實質垂直 20 13.60152 至為 之縱 接端 L/D 為 之延 110 感測The free-standing structure of the nickel-coated niobium carbide gas sensing wire allows it to act as both a fluorine sensing element and a heating source (for example, tending to resistive heating or other heating modes), and to maximize the sensing area as a high surface area of the wire. The result of the volume feature. The integrated design of the gas sensing wire and associated package eliminates the problem of chemical attack by a strong fluorinated gas species in the sensing environment, which is the basis for achieving the standard 矽 Micro Electro Mechanical Systems (MEM S) structure. The present invention thus provides, in one aspect, a novel group of solid state gas sensors that can be coupled to a process chamber in a sensing relationship, such as a semiconductor process chamber, and by being such a wire sensor A variety of different sensitivities and responsiveness are achieved by appropriate selection of materials and structures. The present invention provides, in another aspect, a novel filament-based gas sensor element having an elongated shape and having a two-electrical connection end and a longitudinal axis. The two electrical terminals of the gas sensor element define a line, the longitudinal axis of the gas sensor element being substantially perpendicular to the line. For a gas sensor with a given composition of filaments, the appearance of its longitudinal dimension (L) and its lateral dimension (D) has a significant effect on its signal strength and response time. In general, a larger L/D ratio has a higher signal strength and a shorter response time. Since the vertical axis of the novel gas sensor element of the present invention is substantially vertical 20 13.60152 to the longitudinal end L/D is extended 110 sense
分開 性連 長式 之縱 連接 97. 1 年 二電性連接端所界定之橫向線,此種氣體感測 向尺寸(例如,沿其縱軸之尺寸)係不被介於其 之間的橫向距離所限制,且其因此能被增加以 比,其跟著改良信號強度及降低應答時間。 例示之目的,圖 10顯示一根據本發明之較佳 長式氣體感測器元件 110,該延長式氣體感測 具有一叉骨形狀(wishbone-shape)及藉由附著 絲1 1 1及1 1 2之上端在一起,但自此種絲之下 而形成。該絲111及112之分開的下端因此形 接端110A及110B,藉此一電流能於升溫下通 氣體感測器元件Π 〇供氣體感測。氣體感測器5 軸 110C (以垂直的虛線顯示)係位向垂直至為 端110A及110B界定之線(以水平的虛線顯示) .14修色 月 EiV 7猶无 "ΐ元件~ 電性連 最大化 具體例 器元件 二氣體 端彼此 成二電 過該延 :件 1 1 0 二電性The vertical connection of the separate lengthwise connection of 97. 1 year is defined by the transverse line defined by the two electrical connections. The dimension of the gas sensing direction (for example, the dimension along its longitudinal axis) is not laterally interposed therebetween. The distance is limited and can therefore be increased by a ratio, which is followed by improved signal strength and reduced response time. For purposes of illustration, FIG. 10 shows a preferred long gas sensor element 110 in accordance with the present invention having a wishbone-shape and by attaching filaments 1 1 1 and 1 1 The upper ends of 2 are together, but they are formed from such a wire. The separate lower ends of the wires 111 and 112 thus form ends 110A and 110B, whereby a current can be supplied to the gas sensor element for temperature sensing at elevated temperatures. The gas sensor 5 axis 110C (shown in vertical dashed line) is lined perpendicular to the line defined by the ends 110A and 110B (shown in horizontal dashed lines). 14The coloring month EiV 7 has no "ΐ component~ electrical Even to maximize the specific device components, the two gas ends are electrically connected to each other by the extension: piece 1 1 0
尺寸 此種 良信 增加 之尺 圖 感測 此種形式,延長式氣體感測器元件1 1 〇具有一 ,其不被介於二電性連接端之間的距離所限定 氣體感測器元件1 1 〇之縱向尺寸能被明顯地增 號強度及降低用於氣體感測所需之應答時間, 其之橫向尺寸(例如,沿著為二電性連接端所界 寸或介於二電性連接端之間的距離)。 11顯示根據本發明之另一具體例之另一延長 器元件1 2 0。延長式氣體感測器元件1 2 0具有 縱向的 。結果, 加以改 而不須 定之線 式氣體 一錄匙 21 13.60152 97 1. 14 ψ· ^ ! 年月5: ' ti 孑吊尤丨 孔形狀(keyhole-shape)及藉由彎曲及成形一單一氣體感測 絲而形成。此種一經彎曲/成形之氣體感測絲的兩端形成氣 體感測器元件120之二電性連接端120A及120B,及一電 流能於升溫下經由此種電性連接端120A及120B而通過該 延長式氣體感測器元件1 2 0供氣體感測。氣體感測器元件 120之縱軸 120C(以垂直的虛線顯示)係位向垂直至為二電 性連接端12 0A及120B界定之線(以水平的虛線顯示)。The size of such a good letter is increased by the scale sensing the form, the extended gas sensor element 1 1 〇 has a gas sensor element 1 1 that is not defined by the distance between the two electrical connections. The longitudinal dimension of the crucible can be significantly increased in intensity and reduced in response time required for gas sensing, and its lateral dimension (eg, along the boundary of the two electrical connections or between the two electrical connections) the distance between). 11 shows another extender element 120 in accordance with another embodiment of the present invention. The extended gas sensor element 120 has a longitudinal shape. As a result, it is not necessary to change the line gas one key 21 13.60152 97 1. 14 ψ· ^ ! Year Month 5: ' ti 孑 丨 key keyhole shape (keyhole-shape) and by bending and forming a single gas Formed by sensing the wire. The two ends of the bent/formed gas sensing wire form two electrical connecting ends 120A and 120B of the gas sensor element 120, and a current can pass through the electrical connecting ends 120A and 120B at an elevated temperature. The extended gas sensor element 120 is for gas sensing. The longitudinal axis 120C of the gas sensor element 120 (shown in vertical dashed lines) is lined perpendicular to the line defined by the two electrical connections 12A and 120B (shown in horizontal dashed lines).
圖12顯示另一延長式氣體感測器元件130,其具有一打 開的髮夹形狀及藉由彎曲一單一氣體感測絲而形成。該彎 曲氣體感測絲的兩端形成氣體感測器元件1 3 0之二電性連 接端130A及130B,及一電流能於升溫下經由此種電性連 接端130A及130B而通過該延長式氣體感測器元件130供 氣體感測。氣體感測器元件1 3 0之縱軸1 3 0 C (以垂直的虛 線顯示)係位向垂直至為二電性連接端130A及130B界定 之線(以水平的虛線顯示)。Figure 12 shows another elongated gas sensor element 130 having an open hairpin shape and formed by bending a single gas sensing wire. The two ends of the curved gas sensing wire form two electrical connection ends 130A and 130B of the gas sensor element 130, and a current can pass through the extended connection via the electrical connection ends 130A and 130B at an elevated temperature. Gas sensor element 130 is for gas sensing. The vertical axis 1 3 0 C of the gas sensor element 1 30 (shown in vertical dashed lines) is lined perpendicular to the line defined by the two electrical connections 130A and 130B (shown in horizontal dashed lines).
圖13顯示另一延長式氣體感測器元件140,其具有一 Μ 形及藉由以鋸齒之形式附著四根氣體感測絲1 4 1、1 4 2、1 4 3 及1 4 4之個別端而形成。絲1 4 1之一端與絲1 4 4之一端形 成氣體感測器元件140之二電性連接端140Α及140Β,及 一電流能於升溫下經由此種電性連接端140Α及140Β而通 過該延長式氣體感測器元件1 4 0供氣體感測。氣體感測器 元件140之縱轴140C(以垂直的虛線顯示)係位向垂直至為 二電性連接端 140Α及 140Β界定之線(以水平的虛線顯 22 1360152 97. 1. 14 年月5:' “ L 侧尤 示)。 '———Figure 13 shows another elongated gas sensor element 140 having a meander shape and by attaching four gas sensing wires 1 4 1 , 1 4 2, 1 4 3 and 1 4 4 in the form of serrations. Formed at the end. One end of the wire 1 4 1 and one end of the wire 14 4 form two electrical connecting ends 140Α and 140Β of the gas sensor element 140, and a current can pass through the electrical connecting end 140Α and 140Β at a temperature rise The extended gas sensor element 140 is for gas sensing. The longitudinal axis 140C of the gas sensor element 140 (shown in vertical dashed lines) is oriented perpendicular to the line defined by the two electrical terminals 140Α and 140Β (shown by a horizontal dotted line 22 1360152 97. 1. 14 months 5 :' "L side especially shown." '--
值得注意者為該延長式氣體感測器元件之許多其他形 狀及構成係可行的,及能使用在本發明之運用,但是為了 舉例說明之目的,在此只顯示一些說明性之具體例於圖1 〇 至13。熟習此領域之通常人士能根據在此所提供之揭示及 不需過度實驗,而輕易地修改如顯示在圖10至13之延長 式氣體感測器元件之形狀及構成,及任何此種修改係在本 發明之寬廣的範圍内。 為達成高氣體靈敏度與最小化應答延遲,本發明之延長 式氣體感測器元件之外觀比較佳大於3,及更佳大於1 0 ’ 及最佳大於50。 如上述之延長式氣體感測器元件能被安裝在一支撐結 構上,以形成一氣體感測器總成,該氣體感測器總成能被 放置在一流體通道上,用以偵測標的氣體種類之存在。此 種氣體感測器總成亦可包含用以偵測於此種氣體感測器元 件當其與標的氣體種類接觸時的變化之構件,及指示此種 變化之應答產生一輸出信號之構件。 一較佳具體例,本發明之氣體感測絲係支撐在一耐氟凸 緣材料,例如由 Vespel®聚亞醯胺、鋁或鎳形成之 KF凸 緣。在本發明各種實施例中,Vespel®聚亞醯胺係構造之較 佳的聚亞醯胺材料,但須知其他聚亞醯胺或聚合物(例如, 聚砜)之構造材料可選擇地使用。 23 1360152 π i. η 年月 Λ .__ 此種支撐結構提供實體的支撐及經由二電性連接 ' 性連接至氣體感測器元件,且支撐結構之支撐或安裝 因此必須至少容納氣體感測器元件之二電性連接端。 最小化該支撐結構之表面積或佔地面積,本發明之氣 測器元件係配置及構成使得其之縱轴係實質垂直至該 結構之支撐或安裝表面。以此方式’支撐結構之佔地 可降低而不影響或包含該氣體感測器元件之L/D比。It is noted that many other shapes and configurations of the extended gas sensor element are possible and can be used in the practice of the present invention, but for illustrative purposes only some illustrative specific examples are shown herein. 1 〇 to 13. Those of ordinary skill in the art will be able to readily modify the shape and configuration of the extended gas sensor elements as shown in Figures 10 through 13, and any such modifications, based on the disclosure provided herein and without undue experimentation. Within the broad scope of the invention. To achieve high gas sensitivity and minimize response delay, the extended gas sensor elements of the present invention preferably have an appearance greater than 3, and more preferably greater than 10' and preferably greater than 50. An extended gas sensor component as described above can be mounted on a support structure to form a gas sensor assembly that can be placed on a fluid channel for detecting the target The existence of gas species. The gas sensor assembly can also include means for detecting changes in the gas sensor element as it contacts the target gas species, and means for indicating an output of the response to produce an output signal. In a preferred embodiment, the gas sensing wire of the present invention is supported on a fluorine-resistant flange material such as a KF flange formed of Vespel® polyamine, aluminum or nickel. In various embodiments of the invention, Vespel® polyamidones are preferred for the construction of polyamidoamine materials, although it is to be understood that other materials of construction of polyamines or polymers (e.g., polysulfones) are optionally employed. 23 1360152 π i. η 年月Λ .__ This support structure provides physical support and is connected to the gas sensor element via a two-electric connection, and the support or installation of the support structure must therefore accommodate at least the gas sensor The second electrical connection of the component. Minimizing the surface area or footprint of the support structure, the gas detector elements of the present invention are configured and constructed such that their longitudinal axes are substantially perpendicular to the support or mounting surface of the structure. In this way the footprint of the support structure can be reduced without affecting or including the L/D ratio of the gas sensor element.
圖1 4顯示一氣體感測器總成1 5 0,包含一具有一平 . 撐或安裝表面154之支撐結構152。安裝表面154包 壓合點1 5 3用以安裝叉骨形狀之氣體感測器元件1 5 1 電性連接端1 5 1 A和1 5 1 B。以此方式,氣體感測器元件 係以「垂直」方式安裝至支撐結構 1 5 2,亦即具有其 151C定向垂直至或實質垂直至支撐結構 152之安裝 154 〇 φ 因為該氣體感測器元件之縱軸係實質地垂直至支 構之安裝表面,該氣體感測器元件之縱向尺寸能顯著 加用以改良信號強度及降低應答時間,但不需增加安 面之面積。因此,本發明氣體感測器總成有利地提供 的氣體感測能力及降低的佔地面積。 此外,氣體感測器元件之垂直安裝提供靈活性,以 此種氣體感測器元件沿著其縱軸之熱膨脹及收縮。 因此,本發明達成氣體感測領域之重大的進展,藉 供一種如上所述之延長式氣體感測器元件,其能垂直 一修!7二 輞无 端電 表面 為了 體感 支撐 面積 面支 含二 的二 15 1 縱軸 表面 撐結 地增 裝表 增強 容納 由提 地安 24 1360152 37. 1. 14 , f 年月 裝在一支撐結構上。 _领Λ, 對於氟氣體種類之偵測,本發明較佳使用氟反應性金屬 絲,諸如如上述之含鎳絲,以形成此種延長式氣體感測器 元件。藉由監測金屬絲當被其與氟種類之反應引起在該金 屬絲性質的變化,偵測者能決定特別氣體環境,諸如由半 導體室清潔製程排出之流出氣流中,是否有一或多種標的 氟種類之存在/或濃度。Figure 14 shows a gas sensor assembly 150 that includes a support structure 152 having a flat or mounting surface 154. Mounting surface 154 package Pressing point 1 5 3 for mounting the shape of the wishbone gas sensor element 1 5 1 Electrical connection end 1 5 1 A and 1 5 1 B. In this manner, the gas sensor element is mounted to the support structure 152 in a "vertical" manner, i.e., has its 151C orientation perpendicular to or substantially perpendicular to the mounting of the support structure 152 φ φ because of the gas sensor element The longitudinal axis is substantially perpendicular to the mounting surface of the support, and the longitudinal dimension of the gas sensor element can be significantly increased to improve signal strength and reduce response time without increasing the area of the surface. Accordingly, the gas sensor assembly of the present invention advantageously provides gas sensing capabilities and reduced footprint. In addition, the vertical mounting of the gas sensor elements provides the flexibility to thermally expand and contract such gas sensor elements along their longitudinal axes. Therefore, the present invention achieves significant advances in the field of gas sensing by providing an extended gas sensor element as described above, which can be repaired vertically! 7 辋 endless electrical surface for the somatosensory support area surface support The two 15 1 longitudinal axis surface reinforced surface reinforcement table is reinforced by the Titian 24 1360152 37. 1. 14 , f year and month mounted on a support structure. For the detection of fluorine gas species, the present invention preferably uses a fluorine-reactive metal wire, such as the nickel-containing wire as described above, to form such an elongated gas sensor element. By monitoring the change in the properties of the wire caused by its reaction with the fluorine species, the detector can determine whether a particular gaseous environment, such as the outflow gas stream exiting the semiconductor chamber cleaning process, has one or more of the desired fluorine species. The presence/or concentration.
具體而言,一對鎳塗層s i c碳纖維能被並排對齊,及然 後在其之一端附著,但使此種鎳塗層SiC碳纖維之相對端 留下而不附著且彼此分開,以形成一具有二電性連接端之 如上述之一叉骨形狀之氣體感測器元件。 或者,此種叉骨形狀之氣體感測器元件可藉由對齊一對 未塗覆SiC碳纖維及在其之一端附著該等而形成,以便形 成一叉骨形狀之前驅結構,接著其能塗覆一層氣體感測材’ 料諸如錄或鎮合金。 對於定量量測本發明氣體感測器元件之信號強度及應 答性,自半導體潔淨室含有氟種類之排出氣體同時與一第 一氣體感測器總成和一第二氣體感測器總成接觸,該第一 氣體感測器總成包含一垂直安裝的又骨形狀之氣體感測器 元件(WISHBONE),該第二氣體感測器總成包含一水平安 裝的直鎳塗覆SiC碳纖維,兩者皆產生一組感測器信號輸 出。然後由本發明垂直安裝的叉骨形狀之氣體感測器元件 產生之信號輸出及由水平安裝的直鎳塗覆SiC碳纖維產生 之信號輸出疊置為時間的函數,以顯現其之相對的信號強 25 1360152 97. I. 14 ^ 年月曰f · 度及應答性。 ~— 圖 15顯示由包含垂直安裝的又骨形狀之氣體感測器元 件之氣體感測器總成產生之信號輸出對時間之關係(以實 線表示),該又骨形狀之氣體感測器元件係以二根鎳塗覆 SiC碳纖維所形成。由包含水平安裝的直鎳塗覆SiC碳纖 維之氣體感測器總成產生之信號輸出對時間之關係係以虛 線表示。明顯地,與該直鎳塗覆SiC碳纖維感測器比較, 該叉骨形狀之氣體感測器元件提供較快的應答及較強的信 號。 本發明氟感測器總成可包含以任何上述許多適當的形 式之單一氣體感測絲或單一拉長氣體感測元件,或複數個 此種氣體感測絲及/或氣體感測元件,其中多重絲及/或感 測器元件提供多餘部分或支援感測能力,或其中多重絲及/ 或感測器元件之不同種類被配置,用以監測氣流中不同標 的氣體種類或氣體體積之感測。Specifically, a pair of nickel-coated sic carbon fibers can be aligned side by side and then attached at one end thereof, but leaving the opposite ends of such nickel-coated SiC carbon fibers unattached and separated from each other to form one having two The electrical sensor end is a gas sensor element of one of the above-described wishbone shapes. Alternatively, such a wishbone-shaped gas sensor element can be formed by aligning a pair of uncoated SiC carbon fibers and attaching them at one end thereof to form a wishbone shape precursor structure, which can then be coated A layer of gas sensing material, such as a recording or town alloy. For quantitatively measuring the signal intensity and responsiveness of the gas sensor element of the present invention, the exhaust gas containing fluorine species from the semiconductor clean room is simultaneously in contact with a first gas sensor assembly and a second gas sensor assembly. The first gas sensor assembly includes a vertically mounted, bone-shaped gas sensor component (WISHBONE), the second gas sensor assembly including a horizontally mounted straight nickel coated SiC carbon fiber, two All generate a set of sensor signal outputs. The signal output produced by the vertically mounted wishbone-shaped gas sensor elements of the present invention and the signal output produced by the horizontally mounted straight nickel coated SiC carbon fibers are then superimposed as a function of time to reveal their relative signal strengths. 1360152 97. I. 14 ^ year 曰 f · degree and responsiveness. ~ - Figure 15 shows the signal output versus time (indicated by the solid line) produced by a gas sensor assembly comprising a vertically mounted, gas-shaped gas sensor element, the bone shaped gas sensor The component is formed by coating two SiC carbon fibers with nickel. The relationship of the signal output versus time produced by a gas sensor assembly comprising a horizontally mounted straight nickel coated SiC carbon fiber is indicated by a dashed line. Significantly, the wishbone-shaped gas sensor element provides a faster response and a stronger signal than the straight nickel coated SiC carbon fiber sensor. The fluorosensor assembly of the present invention may comprise a single gas sensing wire or a single elongated gas sensing element, or a plurality of such gas sensing wires and/or gas sensing elements, in any of a number of suitable forms described above, wherein The multifilament and/or sensor elements provide excess or support sensing capabilities, or wherein different types of multifilament and/or sensor elements are configured to monitor different types of gas species or gas volumes in the gas stream .
此外,陣列中之絲及/或感測器元件能以不同模式或彼此 相關模式操作,其包含但不受限於定電流(CC)模式及定電 組(CR)模式,供計算法操控例如減去法之個別信號之產 生,以產生一淨指示信號或另外方式添加法以產生一複合 式指示信號或以任何其他適當方式,其中絲及/或感測器元 件之多重性係有效地被使用來監測氣流中不同標的氣體種 類之流動或受測氣體之體積,用以產生相關信號供監測或 控制目的。 在所提供之多重氤體感測絲及/或感測器元件之例子 26 1360152 1· Π~^ ηζ I 年月δ'Λ jFurthermore, the wires and/or sensor elements in the array can operate in different modes or in a correlated mode, including but not limited to constant current (CC) mode and set voltage (CR) mode, for computational manipulation such as Subtracting the generation of individual signals to produce a net indication signal or otherwise adding a method to produce a composite indication signal or in any other suitable manner, wherein the multiplicity of wires and/or sensor elements is effectively Used to monitor the flow of different target gas species in the gas stream or the volume of the gas being measured to generate relevant signals for monitoring or control purposes. Examples of multiple tamper sensing wires and/or sensor elements provided 26 1360152 1· Π~^ ηζ I Year δ'Λ j
,補无I 中,多重氣體感測絲及/或感測器元件之不同種Si可以被'構 成或配置供被監測之流體環境中不同氣體種類之感測,及/ 或在不同溫度下相同氣體種類,及絲及/或感測器元件之不 同幾何形狀及構成可被使用供多餘部分及/或確保準確度 等。In addition, the different species of Si of the multiple gas sensing wires and/or sensor elements can be 'constructed or configured for sensing different gas species in the fluid environment being monitored, and/or the same at different temperatures The gas type, and the different geometries and configurations of the wire and/or sensor elements can be used for excess and/or to ensure accuracy and the like.
關於氣體感測絲及/或氣體感測元件陣列之使用,高級資 料處理技巧能被使用以提升感測器系統之輸出。此種技巧 之例子包含但不受限於補償信號之使用、時間變化信號之 使用、加熱器電流、鎖定放大技巧、信號平均、信號時間 衍生法及阻抗光譜法技巧。另外,屬於化學統計 (chemometrics)之類別的高級技巧亦可被應用。此等技巧 包含最小平方吻合法、反最小平方法、主成分迴歸及部分 最小平方資料分析方法。Regarding the use of gas sensing wires and/or gas sensing element arrays, advanced data processing techniques can be used to boost the output of the sensor system. Examples of such techniques include, but are not limited to, the use of compensation signals, the use of time varying signals, heater currents, lock amplification techniques, signal averaging, signal time derivation, and impedance spectroscopy techniques. In addition, advanced techniques in the category of chemometrics can also be applied. These techniques include least squares fit, inverse least squares, principal component regression, and partial least squares data analysis.
在本技術領域範圍内,本發明氣體感測絲或/及氣體感測 元件因此可以適當方式耦接至轉換器、計算模組或其他信 號處理單元,以提供被監測之流體環境中一或多種標的氣 體種類存在或量變化之輸出指示。 須了解一種能適應至本發明應用之型式之微熱板結構 可被使用在本發明之氣體感測器總成,如更完全揭示在 2001 年 7 月 24 日頒給 Frank DiMeo,Jr.及 Gautam Bahndari 之美國專利第6,265,222號,其之揭示的全部内容在此併 入作為參考。 雖然本發明參考例示之具體例及特點在此作各種不同 的說明,應了解上述該等具體例及特點並非意圖去限制本 27 1360152The gas sensing wire or/and the gas sensing element of the present invention may thus be coupled to a converter, computing module or other signal processing unit in a suitable manner to provide one or more of the fluid environments being monitored. An indication of the presence or amount of change in the target gas species. It is to be understood that a micro-hotplate structure that can be adapted to the application of the present invention can be used in the gas sensor assembly of the present invention, as more fully disclosed to Frank DiMeo, Jr. and Gautam Bahndari on July 24, 2001. U.S. Patent No. 6,265,222, the disclosure of which is incorporated herein by reference. While the invention has been described with respect to the specific embodiments and the various embodiments of the invention, it should be understood that
發明,且基於此處之揭示,其他變化、修飾及 對於熟悉此領域人士而言係可被輕易提出。因此本發明欲 與後附之申請專利範圍之範疇相符而寬廣建構。 【圖式簡單說明】 圖1為例示性描述根據本發明之一具體例包含蒙耐塗層 結構包封一碳化矽核心結構之氣體感測絲之橫剖面圖;The invention, and based on the disclosure herein, other variations, modifications, and others are readily available to those skilled in the art. Therefore, the present invention is intended to be broadly constructed in accordance with the scope of the appended claims. BRIEF DESCRIPTION OF THE DRAWINGS FIG. 1 is a cross-sectional view schematically illustrating a gas sensing wire including a weathering coating structure encapsulating a carbonized carbide core structure according to an embodiment of the present invention;
圖2顯示根據本發明之一具體例複合核心結構之部分橫 剖面圖; 圖3顯示由使用鎳塗覆碳化矽絲之氣體感測器總成產生 之輸出信號對時間關係與由殘氣分析儀(RGA)單元產生之 輸出信號對時間關係之比較; 圖4顯示由使用鎳絲之氣體感測器總成產生之輸出信號 對時間關係與由殘氣分析儀(RGA)單元產生之輸出信號對 時間關係之比較; 圖5顯示根據本發明之一具體例經過電化學薄化之包含 頸部之鎳絲之立體圖; 圖6為例示性描述根據本發明之一具體例包含多孔性鎳 塗層之一氣體感測絲之橫剖面圖; 圖7為根據本發明之一具體例包含形成於緊密基底之多 孔性鎳塗層之一氣體感測絲之S E Μ微影:2 shows a partial cross-sectional view of a composite core structure according to an embodiment of the present invention; FIG. 3 shows an output signal versus time relationship generated by a gas sensor assembly using nickel coated silicon carbide wire and a residual gas analyzer (RGA) unit produces an output signal versus time relationship; Figure 4 shows the output signal versus time relationship generated by a gas sensor assembly using a nickel wire and the output signal pair generated by a residual gas analyzer (RGA) unit. Figure 7 shows a perspective view of a nickel wire comprising a neck that has been electrochemically thinned according to one embodiment of the invention; Figure 6 is an illustration of a porous nickel coating according to one embodiment of the invention. A cross-sectional view of a gas sensing wire; Figure 7 is a SE Μ lithography of a gas sensing wire comprising a porous nickel coating formed on a compact substrate in accordance with one embodiment of the present invention:
圖8為根據本發明之一具體例包含一多孔性鎳塗層其特 徵在於一開放孔結構之· 氣體感測絲之S Ε Μ微影I 圖9Α與9Β顯示包含二根鎳塗覆的碳化矽絲之氣體感測 28 1360152Figure 8 is a view showing an embodiment of the present invention comprising a porous nickel coating characterized by an open pore structure of a gas sensing filament, S Ε Μ lithography I, Figs. 9 and 9 are shown to contain two nickel coatings. Carbonized crepe gas sensing 28 1360152
體感測絲形 器總成以壓合電針至KF凸緣上而懸掛; 圖 10顯示根據本發明之一具體例由二根氣 成之叉骨形狀氣體感測器元件; 圖11至13顯示各種不同形狀及構造之延長式氣體感測 器元件; 圖14顯示根據本發明之一具體例叉骨形狀氣體感測器 元件垂直安裝在一支撐結構上;及The body sensing wire assembly is suspended by pressing the electro-acupuncture to the KF flange; Figure 10 shows a gas sensor element formed from two gas-shaped wishbone shapes in accordance with one embodiment of the present invention; Figures 11 through 13 An extended gas sensor element of various shapes and configurations is shown; Figure 14 shows a cross-sectional shape gas sensor element mounted vertically on a support structure in accordance with one embodiment of the present invention;
圖 15 由一垂直安裝的叉骨形狀氣體感測元件 (WISHBONE)產生信號應答對時間關係與由一水平安裝之 直鎳塗覆 SiC碳纖維(XENA)產生信號應答對時間關係於 相同測試條件之比較》 【主要元件符號說明】 1 氣體感測器金屬絲 2 塗層 6 核心結構 10 碳化矽纖維 12 破核心 16 冷-碳化矽護套 1 8 碳表面 22 鎳絲 25 含鎳絲 26 緊密核心 28 多孔性表面 3 2 緊密基板 29 1360152Figure 15 Comparison of the signal response versus time relationship generated by a vertically mounted wishbone shape gas sensing element (WISHBONE) versus the time response of a horizontally mounted straight nickel coated SiC carbon fiber (XENA) versus time for the same test conditions. 》 【Main component symbol description】 1 Gas sensor wire 2 Coating 6 Core structure 10 Tantalum fiber 12 Broken core 16 Cold-carburized sheath 1 8 Carbon surface 22 Nickel wire 25 Nickel wire 26 Tight core 28 Porous Surface 3 2 compact substrate 29 1360152
34 鎳 塗 層 42 緊 密 碳 化 矽 基 板 44 多 扎 性 鎳 塗 層 70 氣 體 感 測 器 陣 列 72 端· 化 矽 氣 體 感 測 絲 74 聚 亞 醯 胺 凸 緣 76 聚 亞 酸 胺 塊 78 電 針 110 延 長 式 氣 體 感 測 器 元 件 1 1 0A 電 性 連 接 點 1 1 0B 電 性 連 接 點 1 1 0C 縱 轴 111 氣 體 感 測 絲 112 氣 BA 體 感 測 絲 120 延 長 式 氣 體 感 測 器 元 件 1 20 A 電 性 連 接 點 1 20B 電 性 連 接 點 1 20C 縱 軸 130 延 長 式 氣 體 感 測 器 元 件 1 3 0A 電 性 連 接 點 1 30B 電 性 連 接 點 1 3 0C 縱 軸 140 延 長 式 氣 體 感 測 器 元 件 1 40A 電 性 連 接 點34 Nickel coating 42 Compact tantalum carbide substrate 44 Multi-strand nickel coating 70 Gas sensor array 72 end · Hydrazine gas sensing wire 74 Polyimide flange 76 Polyurethane block 78 Electro-acupuncture 110 Extended Gas sensor element 1 1 0A Electrical connection point 1 1 0B Electrical connection point 1 1 0C Vertical axis 111 Gas sensing wire 112 Gas BA body sensing wire 120 Extended gas sensor element 1 20 A Electrical connection Point 1 20B Electrical connection point 1 20C Vertical axis 130 Extended gas sensor element 1 3 0A Electrical connection point 1 30B Electrical connection point 1 3 0C Vertical axis 140 Extended gas sensor element 1 40A Electrical connection point
%1· U啓不 年月 ΕΓ.·' 7"诏无I 30 1360152 1 40B 電性連接點 9ryT3-#zi 年月曰.·'..補无 1 40C 縱軸 14 1 氣體感測絲 142 氣體感測絲 143 氣體感測絲 144 氣體感測絲 150 氣體感測器總成 15 1 又骨形狀之氣體感測器元件 1 5 1 A 電性連接點 1 5 1 B 電性連接點 1 5 1 C 縱軸 152 15 3 支撐結構 壓合點 154 安裝表面%1· U启不年月ΕΓ.·' 7"诏无I 30 1360152 1 40B Electrical connection point 9ryT3-#zi 年月曰.·'..补无1 40C Vertical axis 14 1 Gas sensing wire 142 Gas sensing wire 143 Gas sensing wire 144 Gas sensing wire 150 Gas sensor assembly 15 1 Bone shape gas sensor element 1 5 1 A Electrical connection point 1 5 1 B Electrical connection point 1 5 1 C longitudinal axis 152 15 3 support structure crimp point 154 mounting surface
3131
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| US10/758,825 US7228724B2 (en) | 2002-10-17 | 2004-01-16 | Apparatus and process for sensing target gas species in semiconductor processing systems |
| US10/784,750 US20040163445A1 (en) | 2002-10-17 | 2004-02-23 | Apparatus and process for sensing fluoro species in semiconductor processing systems |
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| JPS5784342A (en) * | 1980-11-14 | 1982-05-26 | Ricoh Co Ltd | Manufacture of gas detection element |
| US4662212A (en) * | 1984-09-10 | 1987-05-05 | Sumitomo Bakelite Company Limited | Measuring instrument for concentration of gas |
| JPS63186136A (en) * | 1987-01-28 | 1988-08-01 | Nikon Corp | halogen sensor |
| JP2955583B2 (en) * | 1990-01-23 | 1999-10-04 | 株式会社リケン | Detection element for gas sensor |
| US6468642B1 (en) * | 1995-10-03 | 2002-10-22 | N.V. Bekaert S.A. | Fluorine-doped diamond-like coatings |
| JP3078485B2 (en) * | 1995-10-12 | 2000-08-21 | リンナイ株式会社 | Contact combustion type gas sensor |
| EP0801296A1 (en) * | 1996-03-25 | 1997-10-15 | Cerberus Ag | Photoacoustic gas sensor |
| JP3857384B2 (en) * | 1996-08-26 | 2006-12-13 | グンゼ株式会社 | Semiconductor gas sensor |
| US6499354B1 (en) * | 1998-05-04 | 2002-12-31 | Integrated Sensing Systems (Issys), Inc. | Methods for prevention, reduction, and elimination of outgassing and trapped gases in micromachined devices |
| US6265222B1 (en) * | 1999-01-15 | 2001-07-24 | Dimeo, Jr. Frank | Micro-machined thin film hydrogen gas sensor, and method of making and using the same |
| US7080545B2 (en) * | 2002-10-17 | 2006-07-25 | Advanced Technology Materials, Inc. | Apparatus and process for sensing fluoro species in semiconductor processing systems |
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