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TWI355686B - Plating apparatus for metallization on semiconduct - Google Patents

Plating apparatus for metallization on semiconduct Download PDF

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Publication number
TWI355686B
TWI355686B TW096141722A TW96141722A TWI355686B TW I355686 B TWI355686 B TW I355686B TW 096141722 A TW096141722 A TW 096141722A TW 96141722 A TW96141722 A TW 96141722A TW I355686 B TWI355686 B TW I355686B
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Taiwan
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electrolyte
substrate
channel
anode
chamber
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TW096141722A
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Chinese (zh)
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TW200921769A (en
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Acm Research Shanghai Inc
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Description

丄 1 九、發明說明: 【發明所屬之技術領域】 本發明-般而言關於電鍍裝置,更具體地 於以電化學太斗产锋从π 丨荆%用 θ ^ ',且性基材上形成一金屬層的裝 L疋在晶片上製造超大規模積體(ULSI)電路互連結 φ 【先前技術】 a I中形成互連結構的過程中,在薄的阻性基材 J晶層)上以電化學方式沈積金屬層,通常是銅層,一 :又疋由—電鍍裝置來達成。該電鍍裝置包括下列元件:陽 源、導電的晶片固持裝置、以及電解液單元,該電 解液早凡中包含由酸、金屬鹽和其他添加劑組成的混合溶 液。 a 、先的電鑛過私中,整個種晶層範圍内的電流密度 • 是的°由於“邊緣效應”㈣在,使得基材周邊的 電流:度較高。該電流密度的不均勻性使得晶片的邊緣具 有較咼的電鍍速率而晶片的中心具有較低的電鍍速率。 由於晶片邊緣和中心部位的電鍍速率差異而導致電 - 鍍膜的不均勻性,使得裝置的工藝流程中後續的平坦化步 . ㈣得困難。—具有獨立電源控制的陽㈣統可被應用於 電鍍裝置,以克服上述的不均勻電鍍速率的缺陷,美國專 利US 6,391,1 66介紹了一種上述的系統。 - 當使用惰性陽極或者多個惰性陽極進行電鍍時,會在 5丄1 IX, invention description: [Technical field to which the invention pertains] The present invention generally relates to a plating apparatus, more specifically to an electrochemical reactor, from a π 丨%% using θ ^ ', and on a substrate Forming a metal layer on a wafer to fabricate a very large scale integrated (ULSI) circuit interconnect junction φ [Prior Art] In the process of forming an interconnect structure in a I, on a thin resistive substrate J layer) Electrochemical deposition of a metal layer, usually a copper layer, is accomplished by a plating apparatus. The electroplating apparatus includes the following elements: a positive source, a conductive wafer holding device, and an electrolyte unit which contains a mixed solution of an acid, a metal salt and other additives. a, the first electric mine is in the private, the current density in the entire seed layer range • Yes ° due to the "edge effect" (four), so that the current around the substrate: a higher degree. This current density non-uniformity results in a relatively high plating rate at the edges of the wafer and a lower plating rate at the center of the wafer. The unevenness of the electro-coating due to the difference in plating rate between the edge and the center of the wafer makes the subsequent planarization step in the process flow of the device. - A system with independent power control can be applied to an electroplating apparatus to overcome the above-described disadvantages of uneven plating rates, and a system of the above is described in U.S. Patent No. 6,391,1,66. - When plating with an inert anode or multiple inert anodes, it will be at 5

电鍍的過程中產社-备、A 纯.. 包。氣泡也有可能是由電解液補仏丰 統,或者對該電鍍系絲,#〆工游jd 螂及補,,·口糸 由2丨 .....進订干預操作或者日常維馑的仍兹 中引入的。當氣泡與晶m… ^的過私 膜中形成孔穴,使得;面相接觸時,會在電鍵 中,當在電解液……降低在取嚴重的情況 . 生生大罝的氣泡時,電場會發生改變, 亚且電鍍裝晉Φ沾年Α 曰《王 „.+4r 电解液流速會由於流動路徑被阻塞而 嚴重地降低。 攸丨基而 基於浮力和自鈇對泣塔 現代的電鍍裝置/理的去氣泡裝置常常被用在 用。當小氣㈣Γ疋這些裝置通常對於小氣泡不起作 著力雜…者到—個表面上時’它們很難被浮力、附 錄裝置中典型流速産生的拉力作用下的人力移 除。傳統技術中的土# ★ 口力私 平坦的表面並曰乳泡裝置包括多孔層,該多孔層具有 變流體場和電場,步12丨 〗轧泡而不改 ,„. 而要引入一種使得小氣泡能夠變成大氣 ο: 並增大去氣泡的膜表面積。 大量徵尺寸逐漸變小,需要在電鍍溶液中添加 、 達成無孔填充。這些有機成分在電鍵 的過耘中會分解。分解的産物聚集在電鍍液中並且降低了 填充的I·生犯。如果這些産物作爲雜質結合到電鍍膜中, 們曰成爲孔八的形核核心’導致器件的可靠性失效。 •击仏j力先進的電鐘工藝技術中’以提高電鍍液排出和 ^ °二H化學試劑新鮮程度通常需要更高的成本。 。 電鍍裂置中流體場不是專門設計的情況下,電鍍過 紅中新鮮的活性有機物成分和分解後的副産物在接近晶 6 1355686 片表面區域的電解液中的交換速率(該速率是質傳控制 的)將是不均勻的。然而,這個問題不能簡單地藉由提高 電鍍液排出和補給速率來解決。 【發明内容】In the process of electroplating, the company is prepared, A pure.. package. The bubble may also be supplemented by the electrolyte, or the electroplated wire, #〆工游jd 螂 and 补,,·口糸 by 2丨.....by ordering intervention or daily maintenance Introduced in the article. When the bubble forms a hole with the crystal m... ^, the hole is formed in the film, so that when the surface is in contact, it will be in the electric key, when the electrolyte is lowered in the case of taking a serious situation. The electric field will change when the bubble is generated. , and the electroplating equipment Jin Φ Α Α 曰 "王 „. + 4r electrolyte flow rate will be severely reduced due to the flow path is blocked. 攸丨 based and based on buoyancy and self-deprecation of the modern electroplating device / Defoaming devices are often used. When small gas (four) Γ疋 these devices usually do not work for small bubbles... when they are on a surface, they are difficult to be buoyant, under the tensile force generated by the typical flow rate in the appendix device. Manpower removal. The soil in the traditional technology # ★ The private flat surface of the 曰 曰 曰 曰 曰 曰 includes a porous layer, the porous layer has a variable fluid field and electric field, step by step 轧 轧 而不 而不 而不 „ Introducing a membrane surface area that enables small bubbles to become atmospheric ο: and increase de-bubbles. The large-scale size gradually becomes smaller, and it is necessary to add in the plating solution to achieve non-porous filling. These organic components decompose in the event of a bond. The decomposed product accumulates in the plating bath and reduces the filling of the I. If these products are incorporated as an impurity into the plating film, they become the nucleation core of the hole VIII, causing the reliability of the device to fail. • Killing the power of advanced electric clock technology in order to increase the discharge of plating solution and the freshness of the chemical reagents usually require higher costs. . The exchange rate of the fresh active organic component and the decomposed by-product in the electroplated red in the electrolyte near the surface area of the crystal 6 1355686 (the rate is quality control) ) will be uneven. However, this problem cannot be solved simply by increasing the discharge rate of the plating solution and the rate of replenishment. [Summary of the Invention]

本發明的實施例是一電鍍裝置,包括容納至少兩個陽 極的陽極腔、容納至少兩個流體區域的陰極腔、至少兩個 陽極循環體系、至少兩個陰極循環體系、一緩衝區、一(藉 由迫使氣泡聚並的)氣泡收集器、一電源子系統、一能夠 有效移除電鍍副産物的電解液流體場控制子系統、一電解 液分配子系統、以及—晶片固持裝置。 該氣泡收集器裝置包括至少一個多孔膜,其表面形成 稽狀通道以收集氣泡並迫使氣泡在其中聚並^褶狀通道的 橫截面是V形或者倒W,弓丨導聚並後的氣泡沿著該通道 或者凹槽向上移動並轴+ π , 砂動並排出。並且該褶狀通道增大了氣泡收 集器表面積,因此婵加 θ 了〜的電解液流通面積,使得電解 液在小氣泡阻塞氣泡收隹 ^收集益的部分孔的時候仍然可以流 本發明的實施例還在膜之間提供 煖衝區域中電解液循产& $ # 「耵緩衝&域,该 使得通過底部膜的微型氣泡—在抵達頂 == 間可以溶解。 1膘之别有一段時 體場而向電鍍義材表::匕制接近晶片表面的電解液流 基材表面有效供應有機添加劑並從電鑛基 7 1355686 材表面有效移除副產物的方法。電解液济奸 陰極腔中流體區域的流體速率和起始—截止β± 错由對 守間的I44入· 制而達成。電解液流體場控制子系統獨立控制每 # 5控 區域中的流體速率和起始-截止時間。右择^ —個流體 间有機添加劑的古4 供應改善了對於基材上通孔、溝槽和雙大 ^有效 屬填充,而電鍍副産物的有效移除減小了 、’、Q #的金 純度。 Μ屬膜的不 【實施方式】 圖la,和lc示出了根據本發明的—實施 裝置。該電鍍裝置包括:下部腔n, 緞 π π谷納陽極並包 括多個陽極區域η°;上部腔12,包括多個具有獨立的险 極電解液入口 m的陰極區域120。陽極區域11〇和陰: 區域120都被多個縱向設置的隔離牆1〇2分隔。下部胪 11和上部腔1 2藉由橫向設置的氣泡收集器i 〇5互相連接。 在下部腔11的每一個陽極區域u",一環形的陽 極1〇ι由一腔基座107支樓並與獨立控制的電源通道ιΐ7 相連接。腔基I 107具有多個鍵入式支柱,用於固定陽 極,該支柱包覆有不導電的材料。該裝置的底部是可拆卸 的以便於更換陽極。位於陽極上方的硬質框架丨丨6提供 對於氣泡收集器和該裝置的上部結構的機械支援。每—個 環形的陽是單片或者是由相連接的多片組成。該電 鍍裝置的f源、包括多個t源通道m。㈣一實施例,下 部腔包括至少兩個陽極區域11〇。隔離牆1〇2圍繞每一個 8 丄 JJJ〇j50 環开> %極101並分隔電An embodiment of the invention is a plating apparatus comprising an anode chamber containing at least two anodes, a cathode chamber containing at least two fluid regions, at least two anode circulation systems, at least two cathode circulation systems, a buffer zone, a ( A bubble trap, a power supply subsystem, an electrolyte fluid field control subsystem capable of effectively removing plating by-products, an electrolyte distribution subsystem, and a wafer holding device by forcing the bubbles to coalesce. The bubble trap device includes at least one porous membrane having a surface formed with a channel to collect bubbles and forcing the bubbles therein to gather and the cross-section of the pleated channel is V-shaped or inverted W, and the bubble is converged and then bubbled The channel or groove moves up and the axis + π, sanding and discharging. Moreover, the pleated channel increases the surface area of the bubble collector, so the flow area of the electrolyte is increased by θ, so that the electrolyte can still flow through the implementation of the invention when the small bubbles block the pores of the collection. The example also provides an electrolyte between the membranes in the warm-up zone & $ # "耵 buffer & field, which allows microbubbles through the bottom membrane - to dissolve between the arrival top ==. The time body field to the electroplated material table:: The method of effectively supplying organic additives to the surface of the electrolyte flow substrate near the surface of the wafer and effectively removing by-products from the surface of the electric ore base 7 1355686. The fluid velocity and the initial-cutoff β± error of the medium fluid region are achieved by the inter-suppression I44. The electrolyte fluid field control subsystem independently controls the fluid velocity and the start-stop time in each of the #5 control regions. The right choice of ^ an inter-fluid organic additive for the ancient 4 supply improves the filling of the vias, trenches and double large effective substrates on the substrate, while the effective removal of plating by-products is reduced, ', Q # gold 。 实施 实施 图 图 图 图 图 图 图 图 图 图 图 图 图 图 图 图 图 图 图 图 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 The upper chamber 12 includes a plurality of cathode regions 120 having independent dangerous electrolyte inlets m. The anode regions 11 and the cathode: regions 120 are each separated by a plurality of longitudinally disposed partition walls 1 。 2. The lower 胪 11 and the upper portion The chambers 1 2 are interconnected by a laterally disposed bubble collector i 〇 5. In each of the anode regions of the lower chamber 11, a ring-shaped anode 1〇 is supported by a cavity base 107 and is independently controlled. The channel ΐ7 is connected. The cavity I 107 has a plurality of keyed struts for fixing the anode, the struts are coated with a non-conductive material. The bottom of the device is detachable to facilitate the replacement of the anode. The hard frame above the anode丨丨6 provides mechanical support for the bubble collector and the superstructure of the device. Each annular anode is monolithic or consists of a plurality of connected pieces. The f source of the plating apparatus includes a plurality of t source channels m. (4) a real For example, the lower chamber includes at least two anode regions 11〇. The partition wall 1〇2 surrounds each 8 丄 JJJ〇j50 ring > % pole 101 and separates electricity

则材質是選自不導電:解液流體場。隔離牆 實施例,隔離物上二:化學腐㈣塑膠。根據- 一有數個小孔,這些小孔位於土 氣泡收集器105的位置, 一 於罪近 _ 用作乳泡的通道。根據另一個音 施例,該隔離牆1 02上面q 貫 ,广a 士 有小孔,以完全地隔離相鄰陽 極區域中的電解液。 ^ 電錢電流或者電覆由雪 电反由電源通道〗丨7獨立地施加 一個ί衣形陽極上。雷调—— 原的母個獨立通道可根據預設的時間 施加電壓和波形到每一個 個衣形1¼極。電源可以是直流或去 脈衝電源。 β # 陽極机體分配子系統由每一個陽極區域中連接到 電解液流量控制裝置的獨立的陽極電解液入口 103和獨 立的陽極電解液出。119組成。該陽極流體分配子系統用 於向每-個帛極區域供應電解液並從4 一個冑極區域中 排出舊的電解液、分解産物和粒子。每一個陽極區域中獨 立的陽極電解液循環體系使得不同的陽極區域中陽極電 解液流之間的混合最小化。 氣泡收集器1 〇 5由一個或多個可透性膜附於硬質開 孔或網狀的框架上而形成,其中該框架是錐形的或者倒錐 形的。位於該氣泡收集器框架周邊的凹槽11 5收集氣泡並 引導它們至一氣體出.口丨〇 6.。凹槽丨丨5可以是傾斜的,相 對於水平面形成—個角度。一氣體出口 1〇6與該凹槽相連 接以排出收集的氣體。 一個或多個附著的玎透性膜302 (參考圖3a)可爲達 1355686 成不同的功能而設計。下層膜作致名 狀卄為虱泡的阻擋層,阻擋直 徑大於數微米至數十微米的氣泡。 均 邊膜Η %防止在下部腔 中產生的分解產物進入到上部的電 _ ^ ^ ± 电解液中,該膜同時還提 供對於上層膜的機械支樓。根據-實施例,氣泡收集器的 膜由選自下列組中的多孔含氧塑料製成:聚敗乙烯 (m),氣乙烯(PVDF)、聚四說乙烯(pTFE)、全氣燒 氧基樹脂(PFA),其膜上的孔的平均直徑冑^到 5 0 # m。在另一個實施例中,上岸 層膜用作直徑小於2 // m的 微型氣泡的阻擋層。該膜允許特定 T竹义的離子通過,但是阻止 了大分子通過。根據一實施例,} J上層膜由所述組中具有特 定功能團的含氟塑料製成,上声胺 增膜的孔的平均直徑爲2nra 到 1 5 0 n id 〇 該可透性膜的表面上具有褶灿 负褶狀通道,以提高氣泡收集The material is selected from the group consisting of non-conducting: liquid-dissolving fluid fields. Wall Example, separator II: chemical rot (iv) plastic. According to - there are several small holes which are located at the position of the soil bubble collector 105, as soon as the sin is used as a passage for the milk foam. According to another embodiment, the partition wall 102 has a top surface and a wide aperture to completely isolate the electrolyte in the adjacent anode region. ^ The electric current or the electric cover is applied by the electric power channel 丨7 independently by a snow-electric anode. Thunder - The original parent independent channel applies voltage and waveform to each of the 11⁄4 poles according to the preset time. The power supply can be a DC or de-pulse power supply. The β # anode body distribution subsystem is provided by a separate anolyte inlet 103 and an independent anolyte connected to the electrolyte flow control device in each anode region. 119 composition. The anode fluid distribution subsystem is used to supply electrolyte to each of the drain regions and to discharge old electrolytes, decomposition products and particles from one of the four drain regions. The separate anolyte circulation system in each anode region minimizes mixing between the anode electrolyte streams in different anode regions. The bubble collector 1 〇 5 is formed by attaching one or more permeable membranes to a rigid open or meshed frame, wherein the frame is tapered or inverted cone shaped. A groove 11 5 located at the periphery of the bubble collector frame collects air bubbles and guides them to a gas outlet. The groove 丨丨 5 may be inclined to form an angle with respect to the horizontal plane. A gas outlet port 1 is connected to the groove to discharge the collected gas. One or more attached permeable membranes 302 (see Figure 3a) can be designed for different functions up to 1355686. The underlying film is named as a barrier layer for the blister, blocking bubbles having a diameter greater than a few microns to tens of microns. The average side film Η % prevents decomposition products generated in the lower chamber from entering the upper electric _ ^ ^ ± electrolyte, which also provides a mechanical branch for the upper film. According to an embodiment, the membrane of the bubble collector is made of a porous oxygen-containing plastic selected from the group consisting of poly(ethylene) (m), ethylene (PVDF), polytetraethylene (pTFE), all gas alkoxy Resin (PFA), the average diameter of the pores on the membrane 胄^ to 5 0 # m. In another embodiment, the land film is used as a barrier to microbubbles having a diameter of less than 2 // m. This membrane allows the passage of specific T-shaped ions, but prevents the passage of macromolecules. According to an embodiment, the upper layer film is made of a fluorine-containing plastic having a specific functional group in the group, and the pores of the upper sound amine-enhanced film have an average diameter of 2 nra to 150 n id 〇 the permeable film a pleated pleat-like channel on the surface to enhance bubble collection

的效果’並增加該可透性膜的她 , π,,心面積。該褶狀通道具有V 形或者倒V形的橫截面。這種構^ν 稱k犯在引導殘餘氣體沿著 通道向上排出之前迫使氣泡首先, 自无在通道内聚並。根據一實 施例,槽狀通道可以徑向排布、螺旋排布或者環狀排布, 且褶狀通道中兩個相鄰的側壁之間的夾角是10。到 120°。每一個褶狀通道的最大 取穴问度在2mm到30mm之間。 在靜止的電解液溶液中絲Λπ六 t〆 Y化加在一個氣泡上的體積力 的總和(忽略重力)由公式(1 )认 j給出,並且和氣泡的半 徑密切4相關: p ~~~ ngpr1 - βπηντ 3 (1) 其中F是體積力的合力, Γ疋瑕^泡的半徑,ν是氣泡 1355686 . 的速度,々是該電解液溶液的钻度係數。 " 具有小的半徑的氣泡難以在電解液溶液φ梦叙 •- 其受的體積合力很小。爲了將它們古 夕,因爲 移除,門η ’ 效地從電解液溶液中 '夕除而要使匕們聚亚成大的氣泡。權狀通道 移動路徑在通道的底部匯合 "、 大。當氣泡的尺寸變大後,更大::使爾該處聚並長 著通道向上移動並排/ 的體積合力將推動它們沿 •由於此外’減小褶狀通道的兩個相鄰的側壁之間的夾角使 ^於氣泡與側壁接觸而産生的對於浮力效應的阻力減 小’使得氣泡更加容易移動到槽狀通道的底部。 另-方面,糟狀通道還增加了膜的表面積, 面總的電解液流通面積増 、表 部分地阻塞孔的情況下, 考在膜上 ^積允許保持充分的電解 液流通。大的表面積還增加了特定離子過渡的效果。電解 在圖1 &和1 b中,根據-實施例,上部腔1 2包括數 • ^極區? 120 ’其橫截面是環形(中間的-個陰極區域 除外,其杈截面是圓形)。上% 上邛腔12中的母一個陰極區域 有至少-個連接到電解液流量控歸置的獨立供給 、文入口 m。多餘的電解液從上部腔體周邊溢出並 流出。電解液入口⑴的管路穿過氣泡收集器框 •架和隔離牆1〇2以I達每-個獨立的陰極區域12〇。陰極 .區域的電曰解液流量控制裝置可設置不同的流速和開關時 間以使传流體場的流線能夠在特定的工藝步驟 - 地控制或者局部地控制。 需要局部流體場控制來 電解液混合物的新鲜声,姓,、罪近電鍍表面的區域中 鮮又特別是維持混人物中右嫵> 才, 的濃度。有妒;了匕。物〒有機添加劑 -度有機添加劑的濃度影 以及鍍膜上的缺陷 ’鍍速羊帛充成力、 F Θ 士士 要局部流體場控制來從電铲反庫 &域中有效地移降s,丨芦铷 电銀反應 昆〇 j産物,防止它們結合到正在生+的今 屬膜中。藉由將副產物從生長的孟 和、、f #槿1 ψ Μ 在反應的表面附近移除,通孔 和属檜構造中的電辦:殖右& π _ 今““ 陷可以最小化,並且使最終的The effect of 'and increase the π, the heart area of the permeable membrane. The pleated channel has a V-shaped or inverted V-shaped cross section. This configuration is called forcing the bubble first to force the bubble to accumulate in the channel before directing the residual gas to discharge upward along the channel. According to an embodiment, the channel-like passages may be arranged radially, in a spiral arrangement or in an annular arrangement, and the angle between two adjacent side walls of the pleated channel is 10. To 120°. The maximum acupoint of each pleated channel is between 2mm and 30mm. The sum of the volume forces (ignoring gravity) added to a bubble in a static electrolyte solution is given by equation (1) and is closely related to the radius of the bubble: p ~~ ~ ngpr1 - βπηντ 3 (1) where F is the resultant force of the volume force, the radius of the bubble, ν is the velocity of the bubble 1355686. 々 is the drilling coefficient of the electrolyte solution. " Bubbles with small radii are difficult to make in the electrolyte solution. - The volumetric force they receive is small. In order to remove them, because of the removal, the gate η' effectively removes the bubbles from the electrolyte solution. The weight channel The moving path merges at the bottom of the channel ", large. When the size of the bubble becomes larger, it is larger: the space where it is gathered and the channel is moved upwards and the side-by-side/volume force will push them along. • Because of the further 'reduced pleats between the two adjacent side walls The angle of the contact reduces the resistance to the buoyancy effect caused by the contact of the bubble with the side wall, making it easier for the bubble to move to the bottom of the grooved channel. On the other hand, in the case where the surface of the film is increased by the surface area of the film, the total electrolyte flow area of the surface is 増, and the surface partially blocks the hole, it is considered that the film is allowed to maintain a sufficient flow of the electrolyte. The large surface area also increases the effect of specific ion transitions. Electrolysis In Figures 1 & 1 and 1 b, according to the embodiment, the upper chamber 1 2 includes a number of ? 120' has a circular cross section (except for the middle one, except for the cathode area, which has a circular cross section). The parent cathode region of the upper upper crucible chamber 12 has at least one independent supply, the inlet m, connected to the flow control of the electrolyte. Excess electrolyte overflows from the periphery of the upper chamber and flows out. The line of electrolyte inlet (1) passes through the bubble collector frame and the wall 1〇2 to each of the individual cathode areas 12〇. The electrocracking flow control device of the region can be set with different flow rates and switching times to enable the flow lines of the transfer field to be controlled or controlled locally at a particular process step. Local fluid field control is required to control the freshness of the electrolyte mixture, the surname, the sin near the surface of the plated surface, and especially the concentration of the right 妩> There is awkwardness; The concentration of organic additives - the concentration of organic additives and the defects on the coating 'picking speed of the sheep, the F Θ 士 士 士 士 士 士 士 士 士 士 士 士 士 士 士 士 士 士 士 士 士 士 士 士 士 士 士 士 士 士 士 士 士The cucurbits of the cucurbits and silver are reacted to prevent them from binding to the film of the genus that is being produced. By removing by-products from the growth of Menghe, f #槿1 ψ Μ near the surface of the reaction, the vias and the structures in the 桧 structure: colonization right & π _ now "" can be minimized And make the final

壯$ 罪侍到楗咼。可調整電解液流量控制 衣置以獲得在整個電铲美々 Έ鍍基材乾圍内均勻的流體場,以確保 在罪近電鐘基材的中心ΑΑ J甲u邛位和邊緣部位的區域具有相等 的新鮮有機添加劑和及廡 W和夂應釗産物的父換速率。在整個電鍍 基材乾圍内相等的新鲜古地.灸上 寸m新鮮有機添加劑和反應副産物的交換Strong and sinful. The electrolyte flow control garment can be adjusted to obtain a uniform fluid field throughout the dry circumference of the shovel-coated substrate to ensure that the center of the sin-electric clock substrate is equal to the area of the edge portion and the edge portion. Fresh organic additives and the parental rate of 庑W and 夂 钊 products. Exchange of fresh organic additives and reaction by-products in the same area of the entire plating substrate

速率確保了最終得到的雪供胳认4、八认A T j的冤鍍膜的成分均勻性,換句話說, 提向了在基材的不同位置上製造的器件最終的電阻率均 勻性和抗電遷移性能均勻性。The rate ensures the uniformity of the composition of the final coating obtained by the snow, in other words, the final resistivity uniformity and resistance to the device fabricated at different locations on the substrate. Migration performance uniformity.

知上所述’藉由局部地控制流體場’可以獲得如下的 效果:控制整個基材上的電鍍膜厚度的均勻性;控制整個 基材上的電鍍膜成分的均勻性;控制整個基材上的電鍍膜 電阻率的均勻性;控制整個基材上的電鍍膜抗電遷移性能 的均勻性。Knowing that 'by controlling the fluid field locally' can achieve the following effects: controlling the uniformity of the thickness of the plating film on the entire substrate; controlling the uniformity of the composition of the plating film on the entire substrate; controlling the entire substrate The uniformity of the resistivity of the plated film; controlling the uniformity of the electromigration resistance of the plated film on the entire substrate.

上部腔1 2的.上端還具有流體分散裝置11 2,該流體 分散裝置設置在接近基材的位置,以使得在每一個陰極區 域的頂部産生微觀的均勻流體場。根據一實施例,流體分 散裝置11 2由下列之一的材料製成:多孔陶瓷、抗化學腐 12 1355686 蝕的塑膠材料。 位於上部腔12上方的基材固持裝置121固持基材122 並向其傳導電流。有關基材固持裝置的詳細描述,可參考 us 6, 248’222、US 6, 726, 823 和 US 6, 749, 728,上述的 專利都已轉讓給本申請的申請人並引用結合與此。 來自陽極電解液槽240的電解液溶液以一組流速分 別提供給每一個陽極區域。在到達每一個陽極區域之前, 該電解液溶液通過泵233、過濾器232 ,以及流量控制裝 置204。每一個陽極區域的電解液藉由位於下部腔底部的 出口 219返回到陽極電解液槽24〇。返回的電解液溶液由 流量控制裝置238進行控制。在下部腔中所收集的氣體從 氣體出口 206被排出到陽極電解液槽24〇,然後從陽極電 解:槽240送到排氣裝置241。一壓力泄漏閥m位於過 遽器232和陽極電解液槽24〇之間。陰極電解液槽25〇中 的電解液溶液被以一組流速分別提供給每一個陰極區 域。在到達陰極區域之前’肖電解液溶液通過泵236、過 濾、器235、以及流量控制裝^ 208。每—個陰極區域的電 解液經由位於上部腔側壁上的出口 218返回到陰極電解 液槽250。-壓力泄漏^ 237位於過濾器235和陰極電解 液槽250之間。麼力泄漏閥叫力如在流量控制裝置 2 0 4和2 0 8關閉時打開。 圖3a、3b和3c示出了氣泡收集器的第一實施例,其 中圖3a是該氣泡收集器的立體圖’圖儿是其橫截面,而 圖3。是該氣泡收集器與隔離牆—起裝配時的詳細結構。 13 如圖3a和3b所示,數個徑向的褶狀通道3〇1位於— 錐形或者是倒錐形的框架3 0 0上。如前面所述的,該經向 的褶狀通道301具有V形的橫截面。電解液溶液經由柩架 30 0上的數個開孔3〇5進入到上部腔中。 、 聚並後的氣泡沿著徑向的褶狀通道向上移動,通過隔 離:.307 ^的小孔3〇8,如圖3c所示。根據使用倒錐形 木的貝施例,向上移動的氣泡逐漸由氣泡收集器週邊 的凹槽315收集。凹# 315連接到供收集的氣體排出的氣 體出〇 3G6。在後面的圖中,圖示的實施例忽略了凹槽和 虱體出口以簡化說明。根據使用錐形框架的一實施例,氣 包在錐升/氣,包收集益的尖端被收集,而氣體出口的管道位 於稍微低於尖端最高點的位置,氣體出口將氣體導出到陽 極電解液槽中。 圖4a、4b和4c示出了氣泡收集器的第二實施例,其 中圖4a是該氣泡收集器的立體圖,圖4b是其部分橫截 面,而圖4c是該氣泡收集器與隔離牆連接的部分的詳細 結構。 如圖4a和4b所示’ 一螺旋形的褶狀通道4〇丨位於一 錐形或者倒錐形的框架4〇〇上,圖4a和4b所示的螺旋形 的褶狀通道是連續的並且覆蓋該框架的整個表面。該螺旋 形的摺狀通道401.可以具有與上述的徑向的褶狀通道相 同的橫戴面形狀。數個開孔4〇5用於供電解液溶液通過。 聚並後的氣泡沿著螺旋形的褶狀通道向上移動,通過 隔離牆407上的小孔408,如圖4c所示。向上移動的氣 14 1355686 Λ 體以和第-實施例類似的方式被收集並導出。 圖5a、5b和5c不出了氣泡收集器的第三實施例,其 中圖5a瓦該氣泡收集器的立體圖,圖“是其部分橫截 面而® 5c是肖氣泡收集器與⑮離牆連接的部分的詳細 結構。 如圖5a和5b所不,數個環形的褶狀通道5〇1位於一 錐形或者倒錐㈣㈣5〇〇上,5a#5b所示的環形的The upper end of the upper chamber 12 also has a fluid dispersing device 11 2 disposed adjacent the substrate such that a microscopic uniform fluid field is created at the top of each cathode region. According to an embodiment, the fluid dispersing device 11 2 is made of one of the following materials: a porous ceramic, a chemical resistant material resistant to chemical corrosion 12 1355686. A substrate holding device 121 located above the upper chamber 12 holds the substrate 122 and conducts current thereto. For a detailed description of the substrate holding device, reference is made to US 6, 248' 222, US 6, 726, 823, and US 6, 749, 728, each of which is incorporated herein by reference. The electrolyte solution from the anolyte tank 240 is supplied to each of the anode regions at a set of flow rates. The electrolyte solution passes through pump 233, filter 232, and flow control device 204 before reaching each anode region. The electrolyte in each anode region is returned to the anolyte tank 24 by an outlet 219 located at the bottom of the lower chamber. The returned electrolyte solution is controlled by flow control device 238. The gas collected in the lower chamber is discharged from the gas outlet 206 to the anolyte tank 24, and then sent from the anode electrolysis: tank 240 to the exhaust unit 241. A pressure leak valve m is located between the damper 232 and the anolyte tank 24A. The electrolyte solution in the catholyte tank 25 is supplied to each of the cathode regions at a set of flow rates. The 'electrolyte solution passes through pump 236, filter 235, and flow control device 208 before reaching the cathode region. The electrolyte per each cathode region is returned to the cathode electrolyte bath 250 via an outlet 218 located on the sidewall of the upper chamber. - Pressure leak ^ 237 is located between filter 235 and cathode electrolyte bath 250. The force leakage valve is called open when the flow control device 2 0 4 and 2 0 8 are closed. Figures 3a, 3b and 3c show a first embodiment of a bubble trap, wherein Figure 3a is a perspective view of the bubble collector's cross-section, and Figure 3 is shown. It is the detailed structure of the bubble collector and the partition wall. 13 As shown in Figures 3a and 3b, a plurality of radial pleated channels 3〇1 are located on a conical or inverted conical frame 300. As previously described, the warp pleated channel 301 has a V-shaped cross section. The electrolyte solution enters the upper chamber through a plurality of openings 3〇5 in the truss 30. After the coalescence, the bubbles move upward along the radial pleated channels, passing through the small holes 3〇8 of .307^, as shown in Fig. 3c. According to the shell example using the inverted cone, the upwardly moving bubble is gradually collected by the groove 315 around the bubble collector. Concave #315 is connected to the gas exiting the gas for collection, 3G6. In the latter figures, the illustrated embodiment ignores the grooves and the body outlet to simplify the description. According to an embodiment using a tapered frame, the air bag is collected at the tip of the cone/gas, and the collecting point of the gas is located, and the pipe of the gas outlet is located slightly below the highest point of the tip, and the gas outlet directs the gas to the anolyte. In the slot. Figures 4a, 4b and 4c show a second embodiment of a bubble trap, wherein Figure 4a is a perspective view of the bubble collector, Figure 4b is a partial cross section thereof, and Figure 4c is the bubble collector connected to the partition wall Part of the detailed structure. As shown in Figures 4a and 4b, a spiral-shaped pleated channel 4 is located on a tapered or inverted-conical frame 4, and the spiral pleated channels shown in Figures 4a and 4b are continuous and Cover the entire surface of the frame. The spiral folded channel 401. may have the same cross-sectional shape as the radial pleated channel described above. A plurality of openings 4〇5 are used for the passage of the electrolyte solution. The pooled bubbles move up the spiral pleated channels through apertures 408 in the barrier wall 407, as shown in Figure 4c. The moving gas 14 1355686 is collected and exported in a similar manner to the first embodiment. Figures 5a, 5b and 5c show a third embodiment of a bubble trap, wherein Figure 5a is a perspective view of the bubble collector, the figure "is part of its cross section and the ® 5c is a bubble trap connected to the wall 15 Partial detailed structure. As shown in Figures 5a and 5b, several annular pleated channels 5〇1 are located on a tapered or inverted cone (four) (four) 5〇〇, ring-shaped as shown in 5a#5b

:狀通道被設置在不同的垂直位置上。根據一實施例,每 -個環形糟狀通道的相鄰側壁之間具有相同的夾角。根據 另一貫施例,不同的環形褶狀通道的側壁之間具有不同的 失角。 、對於每一個環形褶狀通道,其具有與上述的徑向褶狀 通道相同的橫截面形狀。數個開孔5〇5用於供電解液溶液 通過。 下部的通道中聚並後的氣泡經由連接相鄰通道的路 徑509和隔離牆507上的小孔5〇8移動到上部的通道,如 圖5c所示。向上移動的氣體以和第一實施例類似的方式 被收集並導出。 圖6a、6b、6c和6d示出了氣泡收集器的第四實施例, 八中圖6a疋5亥氣泡收集器的立體圖,圖6b是其部分橫截 3 6 c和6 d疋該—氣泡收集器以兩種方式與隔離..牆連接 從而將收集的氣泡排出通道的詳細結構。 該第四實施例與第三實施例類似,除了環形褶狀通道 6〇1被設置在一平面框架6〇〇上相同的垂直位置。 15 1355686 . 根據—實施例,每一個陽極區域是由隔 .‘ w的’隔離牆上沒有供氣體通過的開孔,:凡全分隔 -&與相鄰陽極區域中的電解液發生交又。每―广陽極電解 ,包括-獨立的氣體出口以將收集的氣體排出該:極,域 個眘A 2丨丄 衣置。在一 ' β >中,聚並後的氣泡在水平言更置的褶&、s^ 隹 么 伯狀通道中被收 求,之後經由連接每個獨立區域中具有v形橫 的最高部分的路徑6 〇 9被輸送。被收集的氣體經由連== • 路徑609的出氣管道606排出,並經由隔離牆6〇7回到陽 極電解液槽中,如圖6c所示。在另-個實施例中,在褶 狀通道中收集的聚並後的氣泡被電解液流形成的液壓壓 入到位於下方十分接近具有v形橫截面通道的最高部分 的出氣管道610中,並返回到陽極電解液槽中,如圖6d 所示。在另—個實施例中,在兩個隔離牆之間的通道僅具 有半個V形的橫截面。一隔離牆在具有v形橫截面的通道 的最低部分將該通道截斷,而後一個隔離牆在具有V形橫 • 截面的通道的最高部分將該通道截斷。在該具體的設置 中’兩個相鄰的隔離牆之間的表面不再需要褶狀通道,該 氣泡收集器適用於不需要徹底移除所有微型氣泡的情 況。在圖6a及6b中,其中605為框架600的開孔。 圖7示出了具有徑向褶狀通道的膜的總面積和沒有 - 褶狀通道的膜的總面積之比。計算中所使用的變數在表1 / 中給出。基於.第一實施例的具有徑向褶狀通道的骐的總面 積可經由公式(2 )計算得到。該比例隨著通道數量的增 _ 加以及通道最大高度的增加而增大。該比例越高’說明用 16 1355686 於電解液流通的面積越大。如圖所示,在有200個最大高 度爲1 0mm的徑向褶狀通道的情況下,膜的總面積是沒有 褶狀通道的膜的總面積的3倍。 表 1 錐形基座半徑 R 錐形高度 Η 錐形母線長度 L 褶狀通道的最大高度 h 稽狀通道的數量 η: The channels are set at different vertical positions. According to an embodiment, adjacent sidewalls of each of the annular channels have the same angle. According to a further embodiment, the different annular pleated channels have different angles of loss between the side walls. For each annular pleated channel, it has the same cross-sectional shape as the radial pleated channel described above. Several openings 5〇5 are used to pass the electrolyte solution. The pooled bubbles in the lower passage are moved to the upper passage via the path 509 connecting the adjacent passages and the small holes 5〇8 in the partition 507, as shown in Fig. 5c. The gas moving upward is collected and derived in a manner similar to the first embodiment. Figures 6a, 6b, 6c and 6d show a fourth embodiment of a bubble trap, a perspective view of Figure 6a疋5H bubble collector, Figure 6b is a partial cross-section of 3 6 c and 6 d疋-bubble The collector is connected to the isolation wall in two ways to discharge the collected bubbles out of the detailed structure of the channel. This fourth embodiment is similar to the third embodiment except that the annular pleated channel 6〇1 is disposed at the same vertical position on a plane frame 6〇〇. 15 1355686. According to an embodiment, each anode region is an opening through which gas is not passed through the partition wall of the 'W': where the full separation - & is intersected with the electrolyte in the adjacent anode region . Each “wide anode electrolysis” includes a separate gas outlet to discharge the collected gas: the pole, the A2丨丄 clothing. In a 'β >, the pooled bubbles are collected in the horizontally pleated & s^ 隹 隹 伯 状 channel, and then connected by the highest part of each individual area with a v-shaped cross The path 6 〇 9 is delivered. The collected gas is discharged through the outlet duct 606 of the path = 609 and returned to the anode electrolyte tank via the partition wall 6 〇 7 as shown in Fig. 6c. In another embodiment, the pooled bubbles collected in the pleated channels are pressed by the hydraulic pressure formed by the flow of electrolyte into the gas outlet conduit 610 located very close to the highest portion having the v-shaped cross-sectional passage, and Return to the anolyte tank as shown in Figure 6d. In another embodiment, the passage between the two barrier walls has only a half V-shaped cross section. A wall cuts the channel at the lowest portion of the channel having a v-shaped cross section, and the latter wall intercepts the channel at the highest portion of the channel having a V-shaped cross section. In this particular arrangement, the surface between the two adjacent barriers no longer requires a pleated channel, and the bubble collector is suitable for situations where it is not necessary to completely remove all of the microbubbles. In Figures 6a and 6b, where 605 is the opening of the frame 600. Figure 7 shows the ratio of the total area of the membrane with the radially pleated channels to the total area of the membrane without the pleated channels. The variables used in the calculation are given in Table 1 /. The total area of the crucible having the radial pleated passage based on the first embodiment can be calculated via the formula (2). This ratio increases as the number of channels increases and the maximum height of the channel increases. The higher the ratio, the larger the area in which the electrolyte is circulated with 16 1355686. As shown, in the case of 200 radial pleated channels having a maximum height of 10 mm, the total area of the membrane is three times the total area of the membrane without pleated channels. Table 1 Radius of tapered base R Cone height Η Length of tapered busbar L Maximum height of pleated channel h Number of erected channels η

φ-·\ (i?cos(-)-· R π .π. +--(i?cos(—)— v η n hAL1 -R1 sin2(-) + H2){s Η hAL2 -/?2 sin2 (-)Φ-·\ (i?cos(-)-· R π .π. +--(i?cos(—)— v η n hAL1 -R1 sin2(-) + H2){s Η hAL2 -/?2 Sin2 (-)

HH

(2) 其中 ^ Jx2-^2sin^) r-TJi-~r-(2) where ^ Jx2-^2sin^) r-TJi-~r-

fRc〇s^~ -~~h~~-)2^H2+j— + R2sm\^)(l-—)+L s =----—-:-— 2 圖8示出了氣泡收集器的第五實施例的橫截面,其具 有徑向的褶狀通道以及膜之間的緩衝區。 17 1355686 如圖8所示,氣泡收集器具有至少兩個可透性臈 802、803,一緩衝區域804位於這些可透性膜之間,—抵 架8 0 0用於支撐這些可透性膜。數個作爲電解液入口的開 孔以與第一實施例相同的方式被提供,聚並後的氣泡以和 第一實施例類似的方式向上移動並被排出。在圖8中其 中807為隔離牆,8〇6為氣體出口,815為凹槽。 '、 根據圖8所示的實施例’在下層可透性膜8〇2和上層 可透性膜803之間存在間隙以形成一 曰 缓衝區域。在緩衝區 域8 0 4内的電解液流速足夠慢, a 舄通過下層膜的大多數微 型氣泡因其不穩定而在马· F a 疋而在該£域内溶解提供了足夠的時 間。需要說明的异,尤太由& + 的疋在本申晴中,“微型氣泡,,是指小於 下層臈的孔徑的教治。播;:[3·从、丄 、 。虱/包緩衝區域中的電解液是由一附加的 電解液循環體系獨立控制 Ί U ^供比上部腔更低的液 t。U壓力差讀保了電 丈 ._ _ 内下涎動,以防止因微型氣泡 在該膜士暫時性附著而阻礙離子通過上層膜。 該緩衝區域可被庫闲由丨 施例中。 了被應用到任何上述的氣泡收集器的實 明 圖式簡單說 圖 面圖; .出了根據本發明的—實施例的電鍍裝置的截 圖lb示出了圖1- 材和所不的電鍍裝置的分解圖,其中基 材和其固持裝置沒有示出; 圖1fRc〇s^~ -~~h~~-)2^H2+j- + R2sm\^)(l-—)+L s =------:-- 2 Figure 8 shows bubble collection A cross section of a fifth embodiment of the device has a radially pleated channel and a buffer between the membranes. 17 1355686 As shown in Figure 8, the bubble collector has at least two permeable ridges 802, 803 with a buffer zone 804 located between the permeable membranes - the occupant 800 is used to support these permeable membranes . A plurality of openings as electrolyte inlets are provided in the same manner as in the first embodiment, and the pooled bubbles are moved upward and discharged in a manner similar to the first embodiment. In Fig. 8, 807 is a partition wall, 8 〇 6 is a gas outlet, and 815 is a groove. According to the embodiment shown in Fig. 8, there is a gap between the lower permeable membrane 8〇2 and the upper permeable membrane 803 to form a buffer region. The flow rate of the electrolyte in the buffer zone 804 is sufficiently slow that a 舄 most of the microbubbles passing through the underlying membrane provide sufficient time to dissolve in the domain due to its instability in the Ma·F a 。. Need to explain the difference, especially from the & + 疋 in this Shen Qing, "micro-bubble, refers to the teaching of the pore size smaller than the lower layer. Broadcasting;: [3 · from, 丄, 虱 / packet buffer The electrolyte in the area is independently controlled by an additional electrolyte circulation system. ^ U ^ is lower than the upper chamber. The pressure difference of U is read and saved. _ _ Internal turbulence to prevent micro-bubbles The film is temporarily attached to hinder the passage of ions through the upper film. The buffer region can be used in the embodiment of the bubble. The solid pattern is applied to any of the above-mentioned bubble collectors. A screenshot lb of the electroplating apparatus according to the embodiment of the present invention shows an exploded view of the electroplating apparatus of Fig. 1 and the substrate, wherein the substrate and its holding means are not shown;

C 出了同自電鍍裝置的俯視圖’其中流體分 18 1355636 散裝置、基材和其固持裝置沒有示出; 圖2示出了電鍍裝置中的電解循環的示意圖; 圖3 a示出了第一實施例的氣泡收集器的立體圖; 圖3b示出了圖3a所示的氣泡收集器的橫截面; 圖3c示出了該氣泡收集器與隔離牆相連接的部分的 詳細視圖; 圖4a示出了第二實施例的氣泡收集器的立體圖; 圖4b示出了圖4a所示的氣泡收集器的部分橫截面; 圖4c示出了該氣泡收集器與隔離牆相連接的部分的 詳細視圖; 圖5a示出了第三實施例的氣泡收集器的立體圖; 圖5b示出了圖5a所示的氣泡收集器的部分橫截面; 圖5c示出了該氣泡收集器與隔離牆相連接的部分的 詳細視圖, 圖6a示出了第四實施例的氣泡收集器的立體圖; 圖6b示出了圖6a所示的氣泡收集器的部分橫截面; 圖6c示出了根據一實施例該氣泡收集器與隔離牆相 連接的部分的詳細視圖; 圖6d示出了根據另一實施例該氣泡收集器與隔離牆 相連接的部分的詳細視圖; 圖7示出了面積之比作爲具有不同最大通道高度的 徑向排布的褶狀通道的數量的函數; 圖8示出了根據第五實施例的氣泡收集器的橫截面。 19 135*5686 主要元件符號說明 1 1.下部腔 101.陽極 103.陽極電解液入口 106.氣體出口 1 10.陽極區域 112.流體分散裝置 1 16.框架 1 1 8 .出口 120.陰極區域 122.基材 206.氣體出口 218.出口 232.過濾器 236.泵 235.過濾器 238.流量控制裝置 241.排氣裝置 300.框架 302.可透性膜 306.氣體出口 308.小孔 400.框架 405.開孔 1 2.上部腔 102.隔離牆 105.氣泡收集器 107.腔基座 111.陰極電解液入口 1 15.凹槽 1 1 7.電源通道 1 19.陽極電解液出口 121.基材固持裝置 204.流量控制裝置 208.流量控制裝置 219•出口 233. 泵 234. 壓力泄漏閥 237.壓力泄漏閥 240.陽極電解液槽 250.陰極電解液槽 3 0 1.褶狀通道 3 05.開孔 307.隔離牆 315.凹槽 401.褶狀通道 407.隔離牆 20 1355686 408·λΙ、子L 500.框架 501.褶狀通道 505.開孔 507.隔離牆 508.小孔 509.路徑 600.框架 601.褶狀通道 605.開孔 606.管道 607.隔離牆 609.路徑 610.出氣管道 802.下層可透性膜 803.上層可透性膜 804.緩衝區域 806.氣體出口 807.隔離牆 815.凹槽 21C is a top view of the same self-electroplating apparatus 'where the fluid fraction 18 1355636 bulk apparatus, substrate and its holding means are not shown; Figure 2 shows a schematic diagram of the electrolysis cycle in the electroplating apparatus; Figure 3 a shows the first A perspective view of the bubble collector of the embodiment; Fig. 3b shows a cross section of the bubble collector shown in Fig. 3a; Fig. 3c shows a detailed view of a portion of the bubble collector connected to the partition wall; Fig. 4a shows a perspective view of the bubble collector of the second embodiment; FIG. 4b shows a partial cross section of the bubble collector shown in FIG. 4a; FIG. 4c shows a detailed view of a portion of the bubble collector connected to the partition wall; Figure 5a shows a perspective view of the bubble collector of the third embodiment; Figure 5b shows a partial cross section of the bubble collector shown in Figure 5a; Figure 5c shows the portion of the bubble collector connected to the wall Detailed view of Fig. 6a shows a perspective view of the bubble collector of the fourth embodiment; Fig. 6b shows a partial cross section of the bubble collector shown in Fig. 6a; Fig. 6c shows the bubble collection according to an embodiment And the wall Figure 6d shows a detailed view of the portion of the bubble collector connected to the partition wall according to another embodiment; Figure 7 shows the area ratio as a radial row with different maximum channel heights A function of the number of pleated channels of the cloth; Figure 8 shows a cross section of a bubble collector according to a fifth embodiment. 19 135*5686 Main component symbol description 1 1. Lower chamber 101. Anode 103. Anode electrolyte inlet 106. Gas outlet 1 10. Anode region 112. Fluid dispersion device 1 16. Frame 1 1 8 . Outlet 120. Cathode region 122 Substrate 206. Gas outlet 218. Outlet 232. Filter 236. Pump 235. Filter 238. Flow control device 241. Exhaust device 300. Frame 302. Permeable membrane 306. Gas outlet 308. Small hole 400. Frame 405. Opening 1 2. Upper chamber 102. Wall 105. Bubble collector 107. Cavity base 111. Catholyte inlet 1 15. Groove 1 1 7. Power channel 1 19. Anode outlet 121. Substrate holding device 204. Flow control device 208. Flow control device 219 • Outlet 233. Pump 234. Pressure leak valve 237. Pressure leak valve 240. Anolyte tank 250. Catholyte tank 3 0 1. Pleated channel 3 05. Opening 307. Isolation wall 315. Groove 401. Pleated channel 407. Isolation wall 20 1355686 408·λΙ, sub L 500. Frame 501. Pleated channel 505. Opening 507. Isolation wall 508. Small hole 509 Path 600. Frame 601. Pleated channel 605. Opening 606. Pipe 607. Wall 609. Path 610. Outlet pipe 802. Layer 803. The upper layer may be permeable membrane 804. The permeable membrane gas outlet buffer area 806. 807. 815. groove wall 21

Claims (1)

1355686 p· 一~ 100年8月16日更正替換頁 、 to年§月/έ曰修正本 十、申請專利範圍: Α· 一種電鍍裝置,包括: ^下部腔,包括數個由數個隔離牆分隔的陽極區域,其 中母個陽極區域形成一陽極電解液循環體系; 上部腔,包括數個由所述數個隔離牆分隔的陰極區 域其中每個陰極區域中的陰極電解液循環體系被獨立控 制; 氣/包收集器,設置在下部腔和上部腔之間,其中該氣 /包收集益收集氣泡,迫使氣泡聚並,並引導聚並後的氣泡 移出所述裝置;所述氣泡收集器包括: 個或多個框架,支援一個或多個可透性膜; 一路徑,供聚並後的氣泡向上移動至一氣體出口; 其中’所述最接近下部腔的可透性膜具有V形或 者倒V形橫截面的褶狀通道,氣泡在所述褶狀通道中被收 集並被強迫聚並;以及1355686 p· 一·August 16th, 100th correction replacement page, to § § month / έ曰 revision this ten, the scope of application patent: Α · A plating apparatus, including: ^ lower cavity, including several by several walls a divided anode region, wherein the parent anode region forms an anolyte circulation system; the upper chamber includes a plurality of cathode regions separated by the plurality of barrier walls, wherein the catholyte circulation system in each cathode region is independently controlled a gas/package collector disposed between the lower chamber and the upper chamber, wherein the gas/package collects the collected bubbles, forces the bubbles to coalesce, and directs the pooled bubbles out of the device; the bubble collector includes : one or more frames supporting one or more permeable membranes; a path for the aggregated bubbles to move up to a gas outlet; wherein the permeable membrane closest to the lower chamber has a V shape or a pleated channel of inverted V-shaped cross-section in which bubbles are collected and forced to coalesce; 所述最接近上部腔的可透性膜收集穿過所述最接 近下部腔的可透性膜的微型氣泡; 流體分散裝置,設置在上部腔的頂部; 基材固持裝置’位於所述流體分散裝置的上方,用於 固持所述基材並向所述基材傳導電流; 具有多個獨立控制的通道的電源; 電解液流量控制裝置,用於控制所述腔中的各個區域 的電解液; 數個流體分配子系統,用於分配電解液至所述腔中。 22 1355686 100年8月16日更正替換頁 2.如门申請專利範圍第i項所述的裝置,其特徵在於, 所述广接近下冑⑲#可透性祺是由下列材料之一製 成1氟乙烯(PVF) '聚偏氟乙烯(pvdf)、聚四氟乙烯 (PTFE)、全氟院氧基樹脂(PFA),其上的孔㈣2㈣至 50 μιη之間’該最接近下部腔的可透性膜將在下部腔中産 生的分解産物和其上方的電解液分離。The permeable membrane closest to the upper chamber collects microbubbles passing through the permeable membrane closest to the lower chamber; a fluid dispersing device disposed at the top of the upper chamber; the substrate holding device 'located at the fluid dispersion Above the device, for holding the substrate and conducting current to the substrate; a power source having a plurality of independently controlled channels; an electrolyte flow control device for controlling an electrolyte of each region in the chamber; A plurality of fluid distribution subsystems for dispensing electrolyte into the chamber. 22 1355686 Aug. 16th, 100th, pp., the entire disclosure of which is incorporated herein by reference. 1 fluoroethylene (PVF) 'polyvinylidene fluoride (pvdf), polytetrafluoroethylene (PTFE), perfluorinated epoxy resin (PFA), with holes (4) between 2 (four) and 50 μηη 'the closest to the lower cavity The permeable membrane separates the decomposition products produced in the lower chamber from the electrolyte above it. 3.如申請專利範圍第丨項所述的裝置,其特徵在於, 所述最接近上部腔的可透性膜是由下列材料之一製 成:聚氟乙烯(PVF)、聚偏氟乙烯(pvDF)、聚四氟乙烯 (PTFE)、全氟烷氧基樹脂(PFA),其上的孔徑爲2nm至 15〇nm之間,該最接近上部腔的可透性膜過濾電解液中的 特定離子。3. The device of claim 2, wherein the permeable membrane closest to the upper chamber is made of one of the following materials: polyvinyl fluoride (PVF), polyvinylidene fluoride ( PvDF), polytetrafluoroethylene (PTFE), perfluoroalkoxy resin (PFA) having a pore diameter of between 2 nm and 15 〇 nm, the permeable membrane closest to the upper chamber filtering the specificity in the electrolyte ion. 4.如申請專利範圍第1項所述的裝置,其特徵在於, 所述褶狀通道的兩個相鄰侧壁之間的夾角爲【〇。至 120°之間。 5.如申請專利範圍第1項所述的裝置,其特徵在於, 減小所述褶狀通道的兩個相鄰側壁之間的夹角降低了 氣泡與所述側壁接觸而産生的對於浮力效應的阻力,使得 氣泡移動到所述褶狀通道中並在那裏聚並。 23 1355686 . , 100年8月16曰更正替換頁 6.如申請專利範圍第1項所述的裝置,其特徵在於, • 增加具有給定最大高度的褶狀通道的數量增加了所述 氣泡收集器的有效表面積。4. The device of claim 1, wherein an angle between two adjacent side walls of the pleated channel is [〇. Between 120°. 5. The device of claim 1, wherein reducing an angle between two adjacent side walls of the pleated channel reduces buoyancy effects caused by contact of the bubble with the sidewall The resistance causes the bubbles to move into the pleated channels and gather there. The apparatus of claim 1, wherein the increase in the number of pleated channels having a given maximum height increases the bubble collection. The effective surface area of the device. 7.如申請專利範圍第1項所 所述褶狀通道徑向排布在一 述的裝置,其特徵在於, 錐形或者倒錐形的框架 8.如申請專利範圍第1項所述的裝置,其特徵在於, 所述稍狀通道螺旋狀排布在一錐形或者倒錐形的框架 上 9.如甲'專利範圍第1項所述的裝置,其特徵在於, 通道環狀排布在-錐形或者倒錐形的框架 所述褶狀 置 置 1〇·如申請專利範圍第1項所述的裳置,其特 所述權狀通道環狀排布在—平面框架上相同的垂直位 〇 11.如申请專利叙圍第1項所述的 义α裝置,其特徵 所述褶狀通道環狀排布在一平而1 ^ ' 十面樞架上不同的垂直位 A 24 1355686 100年8月16日更正替換頁 12 一如申請專利範圍帛1項所述的裝置,其特徵在於, 每個陽極區域中,一陽極被一個所述隔離牆所包 圍’所述陽極連接到電源系統的-個獨立控制的通道。 13、'如中請專利範圍第1項所述的裝置,其特徵在於, 所述氣泡收集器包括一個以上可透性膜; 在所述臈之間提供一間隙形成―緩衝區域; 所述緩衝區域中的電解液是獨立控制的。 B·如中請專利範圍第η所述的褒置,其特徵在於, 在每一個陰極區域中,提供至少一個獨立控制的電解 液入口以控制其局部流體場。 於 15.如申請專利範圍第Η項所述的裝置,其特徵在 所述多個陰極區域内的局部 々丨體~用於控制所述基材 的反應表面附近反應物和副産物的物質傳輪和交換。 於 如申請專利範圍第14項所述的裝置,其特徵在 所述多個陰極區域内的局部 口丨抓骽%用於控制整個基材 範圍内電鍍膜的成分均勻性。 Π.如申請專利範圍第14項所述的裝置,其特徵在 25 13 55^6 100年8月16曰更正替換頁 於, 所述多個陰極區域内的^| ^ 幻局。卩流體場用於控制整個基材 範圜 内的填充性能。 18如申請專利範圍第14項所述的裝置,其特徵在 於, 所述多個陰極區域内的局 J °丨流體%用於控制整個基材 範園内電鍍膜的電阻率均勻性。 於 19.如申請專利範圍第14項所述的裝置,其特徵在 所述多個陰極區域内的局部 J。丨机體%用於控制替 範園内電鍍膜的抗電遷移性能均勻性。 土 20. 一種電鍍裝置,包括: …70 '王、分隔 域,其中每個陽極區域包括獨立的陽極電 2? —- Am a- a/. . 偏 下部腔’包括數個由數個隔離牆完全八r -- 兀王刀隔的陽極區 至少一個獨立的氣體出口; 一、%環體系和 上邛腔’包括數個由所述數個隔離牆 域,其令每個陰極區域中的陰極電解液循環體:的陰極區 制; 體系被獨立控 氣泡收集器,設置在下部腔和上部腔之 收集器包括: ㈤’所述氣泡 個或多個框架,支援一 個或多個可透性膜; 26 13556.86 100年8月16日更正替換頁 所述可透性膜具有v形或者倒V形橫截面的褶狀 通道,氣泡在所述褶狀通道中被收集並被強迫聚並,所述 可透氣膜是水平設置; 所述可透性臈在每一個陽極區域十是傾斜的,與 水平面成10。至60。的角度; 机體分散裝置,設置在上部腔的頂部; 基材固持裝置,位於所述流體分散裝置的上方,用於 固持所述基材並向所述基材傳導電流; 具有多個獨立控制的通道的電源; 電解液/瓜里控制裝置,用於控制所述腔中的各個區域 的電解液; 數個流體分配子系統,用於分配電解液至所述腔中。 21. 如申請專利範圍第20項所述的襞置,其特徵在 於, 所述最接近下部腔的可透性膜是由下列材料之一製 成:聚氟乙烯(PVF)、聚偏氟乙烯(PVDF)、聚四氣乙歸 (PTFE)、全氟烷氡基樹脂(PFA),其上的孔徑爲至 50 μ m之間’該最接近下部腔的可透性膜將在下部腔中産 生的分解産物和其上方的電解液分離。 22. 如申請專利範圍第20項所述的裝置,其特徵在 於, 所述最接近上部腔的玎透性膜是由下列材料之一製 27 1355686 100年8月16日更正替換頁 成.I氟乙稀(PVF)、聚偏氟乙稀(PVDF)、聚四氟乙稀 (PTFE)、全氟烷氧基樹脂(PFA),其上的孔徑爲2nm至 150nm之間’該最接近上部腔的可透性膜過濾電解液中的 特定離子。 23.如申請專利範圍第2〇項所述的裝置,其特徵在 於, 每個陽極區域中的氣體首先在所述氣泡收集器的最高 ® 位置被收集,之後被分別導出所述裝置。 24·如申請專利範圍第2〇項所述的裝置,其特徵在於, 所述氣泡收集器包括一個以上可透性膜; 在所述臈之間提供一間隙形成一缓衝區域; 所述緩衝區域中的電解液是獨立控制的。 於 25.如申D月專利範圍帛2〇項所述的裝置,其特徵在 在每一個陽極區域中,一陽極 防極破個所述隔離牆完全 分隔,所述陽極連接到電源系統 ^個獨立控制的通道。 於 26·如申請專利範圍第20項所述的裝置’其特徵在 在每一個陰極區域中,提供至少一 液入口以控制其局部流體場 個獨立控制的電解 28 1355686 100年8月16日更正替換頁 27. 如申請專利範圍第26項所述的裝置,其特徵在 於, 所述多個陰極區域内的局部流體場用於控制所述基材 的反應表面附近反應物和副産物的物質傳輸和交換。 28. 如申請專利範圍第26項所述的裝置,其特徵在 於, 所述多個陰極區域内的局部流體場用於控制整個基材 範園内電鍍膜的成分均勻性。 29.如申請專利範圍第26項所述的裝置,其特徵在 於, 戶斤述夕個陰極區域内的只,g 局邛k體%用於控制整個基材 範圍内的填充性能。 30.如申請專利範圍第26項所述的裝置,其特徵在 於, 戶斤述多個陰極區域内的局Α 々4 μ體%用於控制整個基材 範圜内電鍍臈的電阻率均勻性。 3 1 ·如申請專利範圍 於, 戶斤述多個陰極區域内 第26項所述的裝置,其特徵在 的局部流體場用於控制整個基材 29 13556.86 . : 100年8月16日更正替換頁 範圍内電鍍膜的抗電遷移性能均勻性。7. The pleated channel as described in claim 1 is arranged radially in a device, characterized by a tapered or inverted tapered frame 8. The device of claim 1 , characterized in that the slightly shaped channel is arranged in a spiral on a conical or inverted conical frame. 9. The device of claim 1, wherein the channel is arranged in a ring shape. - a conical or inverted conical frame, said pleated arrangement, according to the object of claim 1, wherein the weight passages are arranged annularly on the same vertical position on the plane frame 〇11. The alpha device of claim 1, wherein the pleated channel is annularly arranged in a flat and 1^' ten-sided pivot on different vertical positions A 24 1355686 100 years 8 </ RTI> <RTIgt; </ RTI> <RTIgt; </ RTI> <RTIgt; </ RTI> <RTIgt; </ RTI> <RTIgt; </ RTI> <RTIgt; </ RTI> <RTIgt; Independently controlled channels. 13. The device of claim 1, wherein the bubble collector comprises one or more permeable membranes; a gap is formed between the turns to form a buffer region; The electrolyte in the area is independently controlled. B. The device of claim η, characterized in that in each of the cathode regions, at least one independently controlled electrolyte inlet is provided to control its local fluid field. The device of claim 2, wherein the partial steroids in the plurality of cathode regions are used to control reactants and by-products in the vicinity of the reaction surface of the substrate. And exchange. The device of claim 14, wherein the local portholes in the plurality of cathode regions are used to control the compositional uniformity of the plating film over the entire substrate.装置. The device of claim 14, wherein the device is characterized by a correction in the plurality of cathode regions at 25 13 55^6. The helium fluid field is used to control the filling performance throughout the substrate. The apparatus of claim 14, wherein the plurality of cathode regions are used to control the uniformity of resistivity of the plating film in the entire substrate. 19. The device of claim 14, wherein the device is characterized by a portion J within the plurality of cathode regions. The body % is used to control the uniformity of electromigration resistance of the electroplated film in the alternative garden. Soil 20. A plating apparatus comprising: ... 70 ' king, a separation domain, wherein each anode region comprises an independent anode 2? - Am a- a / . . The lower chamber 'includes a plurality of partitions Completely eight r - at least one independent gas outlet in the anode region of the king's knife; one, the % ring system and the upper chamber "including a plurality of isolated wall domains, which make the cathode in each cathode region Electrolyte circulation body: cathode area system; system is independently controlled bubble collector, collectors disposed in lower chamber and upper chamber include: (5) 'the bubble one or more frames supporting one or more permeable membranes 26 13556.86 Correction of the replacement page of August 16, 100, the permeable membrane having a pleated channel having a v-shaped or inverted V-shaped cross-section in which bubbles are collected and forced to coalesce, The gas permeable membrane is horizontally disposed; the permeable enthalpy is ten-angled in each of the anode regions, and is 10 from the horizontal plane. To 60. Angle; a body dispersing device disposed at the top of the upper chamber; a substrate holding device located above the fluid dispersing device for holding the substrate and conducting current to the substrate; having multiple independent controls Power supply for the channel; electrolyte/guar control device for controlling the electrolyte in various regions of the chamber; and several fluid distribution subsystems for dispensing electrolyte into the chamber. 21. The device of claim 20, wherein the permeable membrane closest to the lower chamber is made of one of the following materials: polyvinyl fluoride (PVF), polyvinylidene fluoride (PVDF), polytetrafluoroethylene (PTFE), perfluoroalkyl fluorene-based resin (PFA) with a pore size of between 50 μm. The permeable membrane closest to the lower chamber will be in the lower chamber. The resulting decomposition product is separated from the electrolyte above it. 22. The device of claim 20, wherein the permeable membrane closest to the upper chamber is made of one of the following materials: 27 1355 686 Aug. 16, 2014 Correction page. Fluoroethylene (PVF), polyvinylidene fluoride (PVDF), polytetrafluoroethylene (PTFE), perfluoroalkoxy resin (PFA), having a pore diameter of between 2 nm and 150 nm 'this closest to the upper part The permeable membrane of the chamber filters specific ions in the electrolyte. 23. Apparatus according to claim 2, wherein the gas in each anode zone is first collected at the highest ® position of the bubble collector and thereafter separately derived. The device of claim 2, wherein the bubble collector comprises one or more permeable membranes; a gap is provided between the ridges to form a buffer region; The electrolyte in the area is independently controlled. The device of claim 2, wherein in each of the anode regions, an anode is completely broken and the partition wall is completely separated, and the anode is connected to the power supply system. Independently controlled channel. The device of claim 20, characterized in that in each of the cathode regions, at least one liquid inlet is provided to control the localized fluid field of the independently controlled electrolysis 28 1355686 Correction August 16, 100 The apparatus of claim 26, wherein the plurality of cathode regions are used to control the transport of reactants and by-products near the reaction surface of the substrate. exchange. 28. The device of claim 26, wherein the localized fluid field within the plurality of cathode regions is used to control composition uniformity of the plating film throughout the substrate. 29. The apparatus of claim 26, wherein the g-cells in the cathode region are used to control the filling properties over the entire substrate. 30. The device of claim 26, wherein the plurality of cathode regions are used to control the uniformity of resistivity of the plated crucible in the entire substrate. . 3 1 · As claimed in the patent application, the device described in item 26 of the plurality of cathode regions is characterized in that the local fluid field is used to control the entire substrate 29 13556.86. : Correction of the replacement on August 16, 100 The electromigration resistance uniformity of the plated film within the page range. 3030
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