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TWI348492B - Composition and method used for chemical mechanical planarization of metals - Google Patents

Composition and method used for chemical mechanical planarization of metals

Info

Publication number
TWI348492B
TWI348492B TW093100061A TW93100061A TWI348492B TW I348492 B TWI348492 B TW I348492B TW 093100061 A TW093100061 A TW 093100061A TW 93100061 A TW93100061 A TW 93100061A TW I348492 B TWI348492 B TW I348492B
Authority
TW
Taiwan
Prior art keywords
metals
composition
method used
chemical mechanical
mechanical planarization
Prior art date
Application number
TW093100061A
Other languages
English (en)
Other versions
TW200508373A (en
Inventor
Song Y Chang
Dnyanesh Tamboli
Mark Evans
Stephen W Hymes
Original Assignee
Air Prod & Chem
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Air Prod & Chem filed Critical Air Prod & Chem
Publication of TW200508373A publication Critical patent/TW200508373A/zh
Application granted granted Critical
Publication of TWI348492B publication Critical patent/TWI348492B/zh

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
    • H01L21/321—After treatment
    • H01L21/32115—Planarisation
    • H01L21/3212—Planarisation by chemical mechanical polishing [CMP]
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09G—POLISHING COMPOSITIONS; SKI WAXES
    • C09G1/00—Polishing compositions
    • C09G1/02—Polishing compositions containing abrasives or grinding agents
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00—Lapping machines or devices; Accessories
    • B24B37/04—Lapping machines or devices; Accessories designed for working plane surfaces
    • B24B37/042—Lapping machines or devices; Accessories designed for working plane surfaces operating processes therefor
    • B24B37/044—Lapping machines or devices; Accessories designed for working plane surfaces operating processes therefor characterised by the composition of the lapping agent
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K3/00—Materials not provided for elsewhere
    • C09K3/14—Anti-slip materials; Abrasives
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K3/00—Materials not provided for elsewhere
    • C09K3/14—Anti-slip materials; Abrasives
    • C09K3/1454—Abrasive powders, suspensions and pastes for polishing
    • C09K3/1463—Aqueous liquid suspensions
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
    • H01L21/7684—Smoothing; Planarisation

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Removal Of Specific Substances (AREA)
  • Organic Low-Molecular-Weight Compounds And Preparation Thereof (AREA)
  • Catalysts (AREA)
TW093100061A 2003-01-03 2004-01-02 Composition and method used for chemical mechanical planarization of metals TWI348492B (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US43782603P 2003-01-03 2003-01-03
US10/744,285 US20040175942A1 (en) 2003-01-03 2003-12-23 Composition and method used for chemical mechanical planarization of metals

Publications (2)

Publication Number Publication Date
TW200508373A TW200508373A (en) 2005-03-01
TWI348492B true TWI348492B (en) 2011-09-11

Family

ID=32717930

Family Applications (1)

Application Number Title Priority Date Filing Date
TW093100061A TWI348492B (en) 2003-01-03 2004-01-02 Composition and method used for chemical mechanical planarization of metals

Country Status (6)

Country Link
US (3) US20040175942A1 (zh)
KR (2) KR101167306B1 (zh)
CN (1) CN1735670B (zh)
AU (1) AU2003303677A1 (zh)
TW (1) TWI348492B (zh)
WO (1) WO2004063301A1 (zh)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN103487602A (zh) * 2013-08-26 2014-01-01 清华大学 集成电路芯片的解剖方法

Families Citing this family (88)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20040216388A1 (en) * 2003-03-17 2004-11-04 Sharad Mathur Slurry compositions for use in a chemical-mechanical planarization process
US7087529B2 (en) 2003-10-02 2006-08-08 Amcol International Corporation Chemical-mechanical polishing (CMP) slurry and method of planarizing surfaces
US20050277262A1 (en) * 2004-06-14 2005-12-15 Taiwan Semiconductor Manufacturing Company, Ltd. Method for manufacturing isolation structures in a semiconductor device
US7223156B2 (en) 2003-11-14 2007-05-29 Amcol International Corporation Method chemical-mechanical polishing and planarizing corundum, GaAs, GaP and GaAs/GaP alloy surfaces
US7112123B2 (en) 2004-06-14 2006-09-26 Amcol International Corporation Chemical-mechanical polishing (CMP) slurry containing clay and CeO2 abrasive particles and method of planarizing surfaces
US7371685B2 (en) * 2004-03-03 2008-05-13 Intel Corporation Low stress barrier layer removal
JP2006179845A (ja) * 2004-11-26 2006-07-06 Fuji Photo Film Co Ltd 金属用研磨液及び研磨方法
CN101851499B (zh) * 2004-12-06 2014-09-24 株式会社半导体能源研究所 复合材料、使用所述复合化合物的发光元件和发光器件以及所述发光元件的制造方法
US7081041B1 (en) 2005-02-28 2006-07-25 Hitachi Global Storage Technologies Netherlands B.V. Manufacturing method for forming a write head top pole using chemical mechanical polishing with a DLC stop layer
US20060214133A1 (en) * 2005-03-17 2006-09-28 Fuji Photo Film Co., Ltd. Metal polishing solution and polishing method
JP2006269600A (ja) * 2005-03-23 2006-10-05 Fuji Photo Film Co Ltd 化学的機械的研磨方法及びこれに用いる研磨液
JP2007095841A (ja) * 2005-09-27 2007-04-12 Fujifilm Corp 化学的機械的研磨方法
CN101283441B (zh) * 2005-10-12 2011-07-20 日立化成工业株式会社 Cmp用研磨液及研磨方法
KR20070088245A (ko) * 2006-02-24 2007-08-29 후지필름 가부시키가이샤 금속용 연마액
JP2007257811A (ja) 2006-03-24 2007-10-04 Hoya Corp 磁気ディスク用ガラス基板の製造方法および磁気ディスクの製造方法
US7977121B2 (en) * 2006-11-17 2011-07-12 Air Products And Chemicals, Inc. Method and composition for restoring dielectric properties of porous dielectric materials
DE102007008279A1 (de) * 2007-02-20 2008-08-21 Evonik Degussa Gmbh Ceroxid und Schichtsilikat enthaltende Dispersion
US8634162B2 (en) * 2007-03-08 2014-01-21 HGST Netherlands B.V. Perpendicular write head having a stepped flare structure and method of manufacture thereof
US7976723B2 (en) * 2007-05-17 2011-07-12 International Business Machines Corporation Method for kinetically controlled etching of copper
DE102007062571A1 (de) * 2007-12-22 2009-06-25 Evonik Degussa Gmbh Ceroxid und Schichtsilikat enthaltende Dispersion
US8337716B2 (en) * 2008-01-23 2012-12-25 Uwiz Technology Co., Ltd. Sarcosine compound used as corrosion inhibitor
CN101525563B (zh) * 2008-03-03 2011-04-13 盟智科技股份有限公司 用于后研磨清洁剂的腐蚀抑制剂
DE102008002321A1 (de) * 2008-06-10 2009-12-17 Evonik Degussa Gmbh Ceroxid und partikuläres Additiv enthaltende Dispersion
KR101153510B1 (ko) * 2009-02-16 2012-06-11 히다치 가세고교 가부시끼가이샤 구리 연마용 연마제 및 이를 이용한 연마 방법
JP5516426B2 (ja) 2009-02-16 2014-06-11 日立化成株式会社 研磨剤及び研磨方法
EP2427522B1 (en) 2009-05-06 2017-03-01 Basf Se An aqueous polishing agent comprising solid polymer particles and two complexing agents and its use in a process for polishing patterned and unstructured metal surfaces
US8679980B2 (en) 2009-05-06 2014-03-25 Basf Se Aqueous metal polishing agent comprising a polymeric abrasiv containing pendant functional groups and its use in a CMP process
EP2449076B1 (en) 2009-06-30 2016-09-21 Basf Se Aqueous alkaline cleaning compositions and methods of their use
US8192644B2 (en) * 2009-10-16 2012-06-05 Fujifilm Planar Solutions, LLC Highly dilutable polishing concentrates and slurries
RU2579597C2 (ru) 2009-11-13 2016-04-10 Басф Се Композиция для химико-механической полировки (хмп ), содержащая неорганические частицы и полимерные частицы
EP2507824A4 (en) 2009-11-30 2013-09-25 Basf Se METHOD FOR REMOVING A MATERIAL MASS STATE OF A SUBSTRATE AND CHEMICAL-MECHANICAL CLEANING AGENT FOR THIS PROCESS
US9028708B2 (en) 2009-11-30 2015-05-12 Basf Se Process for removing a bulk material layer from a substrate and a chemical mechanical polishing agent suitable for this process
EP2539412A4 (en) 2010-02-24 2013-07-31 Basf Se AQUEOUS CLEANSING AGENT, AND PFROPOPOPOLYMERS AND THEIR USE IN A METHOD OF CLEANING PATENTED AND UNSTRUCTURED METAL SURFACES
SG186294A1 (en) 2010-07-19 2013-02-28 Basf Se Aqueous alkaline cleaning compositions and methods of their use
WO2012032466A1 (en) 2010-09-08 2012-03-15 Basf Se Aqueous polishing compositions containing n-substituted diazenium dioxides and/or n'-hydroxy-diazenium oxide salts
SG10201606566SA (en) 2010-09-08 2016-09-29 Basf Se Aqueous polishing composition and process for chemically mechanically polishing substrates containing silicon oxide dielectric and polysilicon films
JP6196155B2 (ja) 2010-09-08 2017-09-13 ビーエーエスエフ ソシエタス・ヨーロピアＢａｓｆ Ｓｅ 水性研磨剤組成物、並びに電気、機械及び光学デバイス用の基板材料を研磨する方法
TWI521028B (zh) 2010-10-05 2016-02-11 巴斯夫歐洲公司 包含特定異聚酸之化學機械研磨組成物
CN103249789B (zh) 2010-10-07 2016-01-13 巴斯夫欧洲公司 含水抛光组合物及化学机械抛光具有图案化或未图案化低k电介质层的基材的方法
CN102477261B (zh) * 2010-11-26 2015-06-17 安集微电子（上海）有限公司 一种化学机械抛光液
CN102477258B (zh) * 2010-11-26 2015-05-27 安集微电子（上海）有限公司 一种化学机械抛光液
US8288283B2 (en) * 2010-12-07 2012-10-16 Texas Instruments Incorporated Aluminum enhanced palladium CMP process
WO2012077063A1 (en) 2010-12-10 2012-06-14 Basf Se Aqueous polishing composition and process for chemically mechanically polishing substrates containing silicon oxide dielectric and polysilicon films
US9496146B2 (en) 2011-03-11 2016-11-15 Basf Se Method for forming through-base wafer vias
WO2012127336A1 (en) 2011-03-21 2012-09-27 Basf Se Aqueous, nitrogen-free cleaning composition, preparation and use thereof
EP2518120A1 (en) 2011-04-28 2012-10-31 Basf Se A chemical mechanical polishing (cmp) composition comprising a polymeric polyamine
EP2502969A1 (en) 2011-03-22 2012-09-26 Basf Se A chemical mechanical polishing (cmp) composition comprising two types of corrosion inhibitors
US10407594B2 (en) 2011-03-22 2019-09-10 Basf Se Chemical mechanical polishing (CMP) composition comprising a polymeric polyamine
EP2554612A1 (en) 2011-08-01 2013-02-06 Basf Se A process for the manufacture of semiconductor devices comprising the chemical mechanical polishing of elemental germanium and/or Si1-xGex material in the presence of a CMP composi-tion having a pH value of 3.0 to 5.5
EP2554613A1 (en) 2011-08-01 2013-02-06 Basf Se A process for the manufacture of semiconductor devices comprising the chemical mechanical polishing of elemental germanium and/or si1-xgex material in the presence of a cmp composi-tion comprising a specific organic compound
RU2605941C2 (ru) 2011-08-01 2016-12-27 Басф Се СПОСОБ ИЗГОТОВЛЕНИЯ ПОЛУПРОВОДНИКОВЫХ УСТРОЙСТВ, ВКЛЮЧАЮЩИЙ ХИМИКО-МЕХАНИЧЕСКОЕ ПОЛИРОВАНИЕ ЭЛЕМЕНТАРНОГО ГЕРМАНИЯ И/ИЛИ МАТЕРИАЛА Si1-x Gex В ПРИСУТСТВИИ ХМП (ХИМИКО-МЕХАНИЧЕСКОЙ ПОЛИРОВАЛЬНОЙ) КОМПОЗИЦИИ, ВКЛЮЧАЮЩЕЙ СПЕЦИАЛЬНОЕ ОРГАНИЧЕСКОЕ СОЕДИНЕНИЕ
US9487674B2 (en) 2011-09-07 2016-11-08 Basf Se Chemical mechanical polishing (CMP) composition comprising a glycoside
EP2568024A1 (en) 2011-09-07 2013-03-13 Basf Se A chemical mechanical polishing (cmp) composition comprising a glycoside
SG11201403505UA (en) 2011-12-21 2014-07-30 Basf Se Method for manufacturing cmp composition and application thereof
EP2794790B1 (en) 2011-12-21 2018-02-21 Basf Se Chemical mechanical polishing composition comprising polyvinyl phosphonic acid and its derivatives
KR20140122271A (ko) 2012-02-10 2014-10-17 바스프 에스이 단백질을 포함하는 화학적 기계적 폴리싱 (ｃｍｐ) 조성물
EP2662885A1 (en) 2012-05-07 2013-11-13 Basf Se A process for the manufacture of semiconductor devices comprising the chemical mechanical polishing (cmp) of iii-v material in the presence of a cmp composition comprising a compound containing an n-heterocycle
WO2013175396A1 (en) 2012-05-23 2013-11-28 Basf Se A process for the manufacture of semiconductor devices comprising the chemical mechanical polishing (cmp) of iii-v material in the presence of a cmp composition comprising a specific non-ionic surfactant
EP2666833A1 (en) 2012-05-23 2013-11-27 Basf Se A process for the manufacture of semiconductor devices comprising the chemical mechanical polishing (cmp) of iii-v material in the presence of a cmp composition comprising a specific non-ionic surfactant
EP2682441A1 (en) 2012-07-06 2014-01-08 Basf Se A chemical mechanical polishing (CMP) composition comprising a non-ionic surfactant and an aromatic compound comprising at least one acid group
US8980750B2 (en) 2012-07-06 2015-03-17 Basf Se Chemical mechanical polishing (CMP) composition comprising a non-ionic surfactant and a carbonate salt
EP2682440A1 (en) 2012-07-06 2014-01-08 Basf Se A chemical mechanical polishing (cmp) composition comprising a non-ionic surfactant and a carbonate salt
CN105229098B (zh) 2013-05-15 2017-08-11 巴斯夫欧洲公司 包含n,n,n＇,n＇‑四(2‑羟基丙基)乙二胺或甲磺酸的化学机械抛光组合物
RU2015153457A (ru) 2013-05-15 2017-06-20 Басф Се Композиции для химико-механической полировки, содержащие один или более полимеров, выбранных из группы, включающей n-винил-гомополимеры и n-виниловые сополимеры
CN105229097B (zh) 2013-05-15 2017-11-17 巴斯夫欧洲公司 包含聚乙烯亚胺的化学机械抛光组合物
EP2997104A4 (en) 2013-05-15 2017-01-25 Basf Se Use of a chemical-mechanical polishing (cmp) composition for polishing a substrate or layer containing at least one iii-v material
EP2810997A1 (en) 2013-06-05 2014-12-10 Basf Se A chemical mechanical polishing (cmp) composition
EP3019569B1 (en) 2013-07-11 2018-05-30 Basf Se Chemical-mechanical polishing composition comprising benzotriazole derivatives as corrosion inhibitors
SG11201700255UA (en) 2014-07-15 2017-02-27 Basf Se A chemical mechanical polishing (cmp) composition
US10217645B2 (en) 2014-07-25 2019-02-26 Versum Materials Us, Llc Chemical mechanical polishing (CMP) of cobalt-containing substrate
CN106795420A (zh) 2014-08-11 2017-05-31 巴斯夫欧洲公司 包含有机/无机复合粒子的化学机械抛光组合物
WO2016097915A1 (en) 2014-12-16 2016-06-23 Basf Se Chemical mechanical polishing (cmp) composition for high effective polishing of substrates comprising germanium
TWI775722B (zh) 2014-12-22 2022-09-01 德商巴斯夫歐洲公司 化學機械拋光（ｃｍｐ）組成物用於拋光含鈷及/或鈷合金之基材的用途
KR102588042B1 (ko) 2014-12-22 2023-10-11 바스프 에스이 코발트 및/또는 코발트 합금 포함 기판의 연마를 위한 화학적 기계적 연마 (cmp) 조성물의 용도
CN107109133B (zh) 2014-12-22 2021-04-13 巴斯夫欧洲公司 化学机械抛光(cmp)组合物在抛光包含钴和/或钴合金的基材中的用途
US9978609B2 (en) 2015-04-27 2018-05-22 Versum Materials Us, Llc Low dishing copper chemical mechanical planarization
US10899945B2 (en) 2015-08-12 2021-01-26 Basf Se Use of a chemical mechanical polishing (CMP) composition for polishing of cobalt comprising substrates
US20200291267A1 (en) 2016-03-22 2020-09-17 Basfr Se Use of a chemical mechanical polishing (cmp) composition for polishing of cobalt and / or cobalt alloy comprising substrates
IL262380B (en) 2016-04-27 2022-08-01 Basf Se Use of a chemical mechanical polishing (cmp) composition for polishing of cobalt and / or cobalt alloy comprising substrates
EP3516002B1 (en) * 2016-09-23 2022-01-05 Saint-Gobain Ceramics & Plastics, Inc. Chemical mechanical planarization slurry and method for forming same
KR102740456B1 (ko) 2016-11-29 2024-12-06 삼성전자주식회사 식각용 조성물 및 이를 이용한 반도체 장치 제조 방법
US11078380B2 (en) 2017-07-10 2021-08-03 Entegris, Inc. Hard abrasive particle-free polishing of hard materials
US11401441B2 (en) 2017-08-17 2022-08-02 Versum Materials Us, Llc Chemical mechanical planarization (CMP) composition and methods therefore for copper and through silica via (TSV) applications
US10465096B2 (en) 2017-08-24 2019-11-05 Versum Materials Us, Llc Metal chemical mechanical planarization (CMP) composition and methods therefore
US10497692B2 (en) * 2017-08-29 2019-12-03 Globalfoundries Inc. SRAM structure with alternate gate pitches
WO2019101555A1 (en) 2017-11-22 2019-05-31 Basf Se Chemical mechanical polishing composition
KR102343437B1 (ko) * 2018-11-16 2021-12-24 삼성에스디아이 주식회사 비정질탄소막용 cmp 슬러리 조성물 및 이를 이용한 연마 방법
US20200277514A1 (en) 2019-02-28 2020-09-03 Versum Materials Us, Llc Chemical Mechanical Polishing For Copper And Through Silicon Via Applications

Family Cites Families (37)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6235357A (ja) * 1985-08-09 1987-02-16 Tokyo Ohka Kogyo Co Ltd ホトレジスト用剥離液
US5391258A (en) * 1993-05-26 1995-02-21 Rodel, Inc. Compositions and methods for polishing
US5575885A (en) * 1993-12-14 1996-11-19 Kabushiki Kaisha Toshiba Copper-based metal polishing solution and method for manufacturing semiconductor device
JP3397501B2 (ja) * 1994-07-12 2003-04-14 株式会社東芝 研磨剤および研磨方法
US5527423A (en) * 1994-10-06 1996-06-18 Cabot Corporation Chemical mechanical polishing slurry for metal layers
WO1998004646A1 (en) * 1996-07-25 1998-02-05 Ekc Technology, Inc. Chemical mechanical polishing composition and process
US5954997A (en) * 1996-12-09 1999-09-21 Cabot Corporation Chemical mechanical polishing slurry useful for copper substrates
US6126853A (en) * 1996-12-09 2000-10-03 Cabot Microelectronics Corporation Chemical mechanical polishing slurry useful for copper substrates
US6083419A (en) * 1997-07-28 2000-07-04 Cabot Corporation Polishing composition including an inhibitor of tungsten etching
US5891205A (en) * 1997-08-14 1999-04-06 Ekc Technology, Inc. Chemical mechanical polishing composition
US6001730A (en) * 1997-10-20 1999-12-14 Motorola, Inc. Chemical mechanical polishing (CMP) slurry for polishing copper interconnects which use tantalum-based barrier layers
US5897375A (en) * 1997-10-20 1999-04-27 Motorola, Inc. Chemical mechanical polishing (CMP) slurry for copper and method of use in integrated circuit manufacture
JP3371775B2 (ja) * 1997-10-31 2003-01-27 株式会社日立製作所 研磨方法
US6177026B1 (en) * 1998-05-26 2001-01-23 Cabot Microelectronics Corporation CMP slurry containing a solid catalyst
US20020019202A1 (en) * 1998-06-10 2002-02-14 Thomas Terence M. Control of removal rates in CMP
US6063306A (en) * 1998-06-26 2000-05-16 Cabot Corporation Chemical mechanical polishing slurry useful for copper/tantalum substrate
US6083840A (en) * 1998-11-25 2000-07-04 Arch Specialty Chemicals, Inc. Slurry compositions and method for the chemical-mechanical polishing of copper and copper alloys
US6855266B1 (en) * 1999-08-13 2005-02-15 Cabot Microelectronics Corporation Polishing system with stopping compound and method of its use
CA2378771A1 (en) * 1999-08-13 2001-02-22 Cabot Microelectronics Corporation Chemical mechanical polishing systems and methods for their use
TW499471B (en) * 1999-09-01 2002-08-21 Eternal Chemical Co Ltd Chemical mechanical/abrasive composition for semiconductor processing
JP4075247B2 (ja) * 1999-09-30 2008-04-16 Ｊｓｒ株式会社 化学機械研磨用水系分散体
US6194366B1 (en) * 1999-11-16 2001-02-27 Esc, Inc. Post chemical-mechanical planarization (CMP) cleaning composition
US7041599B1 (en) * 1999-12-21 2006-05-09 Applied Materials Inc. High through-put Cu CMP with significantly reduced erosion and dishing
US6258721B1 (en) * 1999-12-27 2001-07-10 General Electric Company Diamond slurry for chemical-mechanical planarization of semiconductor wafers
JP2001187878A (ja) * 1999-12-28 2001-07-10 Nec Corp 化学的機械的研磨用スラリー
JP4078787B2 (ja) * 2000-03-31 2008-04-23 Ｊｓｒ株式会社 化学機械研磨用水系分散体
JP3837277B2 (ja) * 2000-06-30 2006-10-25 株式会社東芝 銅の研磨に用いる化学機械研磨用水系分散体及び化学機械研磨方法
US6524167B1 (en) * 2000-10-27 2003-02-25 Applied Materials, Inc. Method and composition for the selective removal of residual materials and barrier materials during substrate planarization
US20020173221A1 (en) * 2001-03-14 2002-11-21 Applied Materials, Inc. Method and apparatus for two-step polishing
JP4945857B2 (ja) * 2001-06-13 2012-06-06 Ｊｓｒ株式会社 研磨パッド洗浄用組成物及び研磨パッド洗浄方法
US6812193B2 (en) * 2001-08-31 2004-11-02 International Business Machines Corporation Slurry for mechanical polishing (CMP) of metals and use thereof
JP4456308B2 (ja) * 2001-12-05 2010-04-28 富士通マイクロエレクトロニクス株式会社 薬液供給装置
US6776810B1 (en) * 2002-02-11 2004-08-17 Cabot Microelectronics Corporation Anionic abrasive particles treated with positively charged polyelectrolytes for CMP
US6821309B2 (en) * 2002-02-22 2004-11-23 University Of Florida Chemical-mechanical polishing slurry for polishing of copper or silver films
US7300601B2 (en) * 2002-12-10 2007-11-27 Advanced Technology Materials, Inc. Passivative chemical mechanical polishing composition for copper film planarization
US7456105B1 (en) * 2002-12-17 2008-11-25 Amd, Inc. CMP metal polishing slurry and process with reduced solids concentration
US20060223320A1 (en) * 2005-03-30 2006-10-05 Cooper Kevin E Polishing technique to minimize abrasive removal of material and composition therefor

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN103487602A (zh) * 2013-08-26 2014-01-01 清华大学 集成电路芯片的解剖方法
CN103487602B (zh) * 2013-08-26 2016-03-30 清华大学 集成电路芯片的解剖方法

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CN1735670A (zh) 2006-02-15
CN1735670B (zh) 2012-06-27
KR20120061981A (ko) 2012-06-13
KR20050111315A (ko) 2005-11-24
US20080254629A1 (en) 2008-10-16
WO2004063301A1 (en) 2004-07-29
TW200508373A (en) 2005-03-01
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US10373842B2 (en) 2019-08-06
AU2003303677A1 (en) 2004-08-10

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