TWI346836B - Photoresist composition - Google Patents
Photoresist compositionInfo
- Publication number
- TWI346836B TWI346836B TW093130888A TW93130888A TWI346836B TW I346836 B TWI346836 B TW I346836B TW 093130888 A TW093130888 A TW 093130888A TW 93130888 A TW93130888 A TW 93130888A TW I346836 B TWI346836 B TW I346836B
- Authority
- TW
- Taiwan
- Prior art keywords
- photoresist composition
- photoresist
- composition
- Prior art date
Links
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/0045—Photosensitive materials with organic non-macromolecular light-sensitive compounds not otherwise provided for, e.g. dissolution inhibitors
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
- G03F7/0392—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/038—Macromolecular compounds which are rendered insoluble or differentially wettable
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/038—Macromolecular compounds which are rendered insoluble or differentially wettable
- G03F7/0382—Macromolecular compounds which are rendered insoluble or differentially wettable the macromolecular compound being present in a chemically amplified negative photoresist composition
Landscapes
- Physics & Mathematics (AREA)
- Spectroscopy & Molecular Physics (AREA)
- General Physics & Mathematics (AREA)
- Materials For Photolithography (AREA)
- Polyethers (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2003353720 | 2003-10-14 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| TW200517779A TW200517779A (en) | 2005-06-01 |
| TWI346836B true TWI346836B (en) | 2011-08-11 |
Family
ID=34431168
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW093130888A TWI346836B (en) | 2003-10-14 | 2004-10-12 | Photoresist composition |
Country Status (5)
| Country | Link |
|---|---|
| JP (1) | JP4673222B2 (en) |
| KR (1) | KR101073417B1 (en) |
| CN (1) | CN1853138B (en) |
| TW (1) | TWI346836B (en) |
| WO (1) | WO2005036268A1 (en) |
Families Citing this family (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7601482B2 (en) * | 2006-03-28 | 2009-10-13 | Az Electronic Materials Usa Corp. | Negative photoresist compositions |
| JP5801798B2 (en) * | 2009-06-04 | 2015-10-28 | メルク パテント ゲゼルシャフト ミット ベシュレンクテル ハフツングMerck Patent Gesellschaft mit beschraenkter Haftung | Two component etching |
| TWI752906B (en) * | 2015-04-22 | 2022-01-21 | 日商日產化學工業有限公司 | Photosensitive fiber and method for forming fiber pattern |
| JP6702251B2 (en) | 2017-04-17 | 2020-05-27 | 信越化学工業株式会社 | Positive resist film laminate and pattern forming method |
| KR102146095B1 (en) | 2017-09-15 | 2020-08-19 | 주식회사 엘지화학 | Photoacid generator and photoresist composition for thick layer comprising the same |
| CN112292637A (en) * | 2018-06-22 | 2021-01-29 | 默克专利有限公司 | Photoresist composition, methods for producing photoresist coating, etched photoresist coating, and etched silicon-containing layer, and method for producing device using the same |
Family Cites Families (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0743501B2 (en) | 1986-04-24 | 1995-05-15 | 富士写真フイルム株式会社 | Positive photosensitive lithographic printing plate |
| JP2539664B2 (en) * | 1988-05-31 | 1996-10-02 | コニカ株式会社 | Photosensitive lithographic printing plate |
| JP2739382B2 (en) * | 1990-12-06 | 1998-04-15 | 富士写真フイルム株式会社 | Lithographic printing plate manufacturing method |
| GB9722862D0 (en) * | 1997-10-29 | 1997-12-24 | Horsell Graphic Ind Ltd | Pattern formation |
| JP2000275830A (en) * | 1999-03-25 | 2000-10-06 | Mitsubishi Chemicals Corp | Photopolymerizable composition, image forming material and photosensitive lithographic printing plate |
| JP3802732B2 (en) * | 2000-05-12 | 2006-07-26 | 信越化学工業株式会社 | Resist material and pattern forming method |
| JP3458096B2 (en) * | 2000-08-11 | 2003-10-20 | 株式会社半導体先端テクノロジーズ | Resist composition and method for manufacturing semiconductor device |
| KR100903153B1 (en) * | 2001-10-10 | 2009-06-17 | 닛산 가가쿠 고교 가부시키 가이샤 | Composition for Forming Antireflection Film for Lithography |
| JP3933459B2 (en) * | 2001-12-14 | 2007-06-20 | 旭化成エレクトロニクス株式会社 | Photosensitive resin composition and laminate |
-
2004
- 2004-10-07 WO PCT/JP2004/014832 patent/WO2005036268A1/en not_active Ceased
- 2004-10-07 KR KR1020067007065A patent/KR101073417B1/en not_active Expired - Fee Related
- 2004-10-07 CN CN2004800267290A patent/CN1853138B/en not_active Expired - Fee Related
- 2004-10-07 JP JP2005514594A patent/JP4673222B2/en not_active Expired - Fee Related
- 2004-10-12 TW TW093130888A patent/TWI346836B/en not_active IP Right Cessation
Also Published As
| Publication number | Publication date |
|---|---|
| WO2005036268A1 (en) | 2005-04-21 |
| CN1853138A (en) | 2006-10-25 |
| CN1853138B (en) | 2011-06-15 |
| KR101073417B1 (en) | 2011-10-17 |
| JP4673222B2 (en) | 2011-04-20 |
| KR20070017962A (en) | 2007-02-13 |
| JPWO2005036268A1 (en) | 2007-11-22 |
| TW200517779A (en) | 2005-06-01 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| MM4A | Annulment or lapse of patent due to non-payment of fees |