TWI345593B - Flow-formed chamber component having a textured surface - Google Patents
Flow-formed chamber component having a textured surface Download PDFInfo
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- TWI345593B TWI345593B TW95133939A TW95133939A TWI345593B TW I345593 B TWI345593 B TW I345593B TW 95133939 A TW95133939 A TW 95133939A TW 95133939 A TW95133939 A TW 95133939A TW I345593 B TWI345593 B TW I345593B
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- mandrel
- preform
- textured
- processing chamber
- substrate
- Prior art date
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- 238000012545 processing Methods 0.000 claims description 71
- 238000000034 method Methods 0.000 claims description 61
- 239000000758 substrate Substances 0.000 claims description 50
- 238000004519 manufacturing process Methods 0.000 claims description 12
- 238000000151 deposition Methods 0.000 claims description 10
- 230000008021 deposition Effects 0.000 claims description 10
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 4
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims description 4
- 229910052802 copper Inorganic materials 0.000 claims description 4
- 239000010949 copper Substances 0.000 claims description 4
- 239000010936 titanium Substances 0.000 claims description 4
- 229910052719 titanium Inorganic materials 0.000 claims description 4
- 230000001154 acute effect Effects 0.000 claims description 3
- 239000000956 alloy Substances 0.000 claims description 2
- 229910045601 alloy Inorganic materials 0.000 claims description 2
- 229910052782 aluminium Inorganic materials 0.000 claims description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 2
- 238000003825 pressing Methods 0.000 claims description 2
- 239000010935 stainless steel Substances 0.000 claims description 2
- 229910001220 stainless steel Inorganic materials 0.000 claims description 2
- 239000013077 target material Substances 0.000 claims description 2
- 239000007789 gas Substances 0.000 description 49
- 239000000463 material Substances 0.000 description 31
- 238000004544 sputter deposition Methods 0.000 description 9
- 230000015572 biosynthetic process Effects 0.000 description 6
- 229910052751 metal Inorganic materials 0.000 description 5
- 239000002184 metal Substances 0.000 description 5
- 238000011109 contamination Methods 0.000 description 4
- 238000004140 cleaning Methods 0.000 description 3
- 238000005336 cracking Methods 0.000 description 3
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- CPLXHLVBOLITMK-UHFFFAOYSA-N Magnesium oxide Chemical compound [Mg]=O CPLXHLVBOLITMK-UHFFFAOYSA-N 0.000 description 2
- 206010036790 Productive cough Diseases 0.000 description 2
- 230000007246 mechanism Effects 0.000 description 2
- 229910052758 niobium Inorganic materials 0.000 description 2
- 239000010955 niobium Substances 0.000 description 2
- GUCVJGMIXFAOAE-UHFFFAOYSA-N niobium atom Chemical compound [Nb] GUCVJGMIXFAOAE-UHFFFAOYSA-N 0.000 description 2
- 238000005240 physical vapour deposition Methods 0.000 description 2
- 210000003802 sputum Anatomy 0.000 description 2
- 208000024794 sputum Diseases 0.000 description 2
- 229910052721 tungsten Inorganic materials 0.000 description 2
- 239000010937 tungsten Substances 0.000 description 2
- 235000012431 wafers Nutrition 0.000 description 2
- 241000283690 Bos taurus Species 0.000 description 1
- 101100269850 Caenorhabditis elegans mask-1 gene Proteins 0.000 description 1
- NRTOMJZYCJJWKI-UHFFFAOYSA-N Titanium nitride Chemical compound [Ti]#N NRTOMJZYCJJWKI-UHFFFAOYSA-N 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 230000004323 axial length Effects 0.000 description 1
- 239000011324 bead Substances 0.000 description 1
- 238000005422 blasting Methods 0.000 description 1
- 239000006227 byproduct Substances 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 238000000748 compression moulding Methods 0.000 description 1
- 238000005260 corrosion Methods 0.000 description 1
- 230000007797 corrosion Effects 0.000 description 1
- 238000005520 cutting process Methods 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 238000004049 embossing Methods 0.000 description 1
- 210000004709 eyebrow Anatomy 0.000 description 1
- 210000000887 face Anatomy 0.000 description 1
- 238000002309 gasification Methods 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 239000001307 helium Substances 0.000 description 1
- 229910052734 helium Inorganic materials 0.000 description 1
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 description 1
- 230000003116 impacting effect Effects 0.000 description 1
- 239000011261 inert gas Substances 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 239000000395 magnesium oxide Substances 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 238000012544 monitoring process Methods 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
- 239000010909 process residue Substances 0.000 description 1
- 239000000047 product Substances 0.000 description 1
- 238000005096 rolling process Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 239000002210 silicon-based material Substances 0.000 description 1
- 238000001179 sorption measurement Methods 0.000 description 1
- 125000006850 spacer group Chemical group 0.000 description 1
- 238000005477 sputtering target Methods 0.000 description 1
- 238000010186 staining Methods 0.000 description 1
- 238000012546 transfer Methods 0.000 description 1
- 230000007704 transition Effects 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- -1 tungsten nitride Chemical class 0.000 description 1
- 238000013022 venting Methods 0.000 description 1
Landscapes
- Shaping Of Tube Ends By Bending Or Straightening (AREA)
- Physical Vapour Deposition (AREA)
Description
1345593 九、發明說明: 【發明所屬之技術領域】 本發明有關於一種製造用於基板處理室之元件的方 法,特別是有關於以流動形成製造具有紋理表面之元件的 方法。 【先前技術】1345593 IX. Description of the Invention: Field of the Invention The present invention relates to a method of fabricating an element for a substrate processing chamber, and more particularly to a method of forming an element having a textured surface by flow formation. [Prior Art]
在處理如半導體晶圓及顯示器等基板時,將一基板置 於一處理室内並暴露於一能量化氣體中以便在基板上沈積 或蝕刻材料。在此處理過程中,會產生處理殘餘物且可能 沈積於處理室之内表面上。舉例而言,在濺鍍沈積製程中, 由一靶材濺鍍出來以沈積在一基板上之材料亦會沈積在處 理室中之其他元件表面上,例如沈積環 '陰蔽環、室壁内 襯及聚焦環。在後續處理循環中,所沈積之處理殘餘物可 能自處理室表面「剝離j而掉落並污染基板。為了減少基 板受處理殘餘物之污染,可使處理室中之元件表面具有紋 理。將處理殘餘物吸附至紋理表面且可抑制處理殘餘物剥. 落並避免污染處理室中之基板。 傳統上,在一種多重步驟製程中製造具有紋理表面之 元件。在第一製程步驟中,係製造元件之外型或整體結構, 舉例而言,可將一塊金屬利用電腦數位控制(CNC)切削成 所需結構。之後,利用一第二製程處理在切削後的元件上 形成纹理表面。舉例而言,表面紋理加工處理可包括研磨、 珠喷沙或拋光、或上述處理之組合。在一情形中,欲形成 5 1345593 纹理表面,可藉由將一電磁能光束導向至一元件之一表面 上,以形成可供處理沉積物良好吸附的凹陷及突起。此一 表面之一實施例為一 Lavacoat加表面,其可見於,如 . PoPi〇lkowski等人擁有之美國專利公告案2003-01 73526 , 號(2〇〇3年9月18日公告,2002年3月13日申請):以及In processing substrates such as semiconductor wafers and displays, a substrate is placed in a processing chamber and exposed to an energized gas to deposit or etch material on the substrate. During this process, processing residues are created and may deposit on the inner surface of the processing chamber. For example, in a sputter deposition process, a material deposited by a target to be deposited on a substrate is also deposited on the surface of other components in the processing chamber, such as a deposition ring, a shadow ring, or a chamber wall. Lining and focusing ring. In the subsequent processing cycle, the deposited processing residue may "strip j from the surface of the processing chamber and drop and contaminate the substrate. In order to reduce the contamination of the substrate by the processing residue, the surface of the component in the processing chamber may be textured. The residue adsorbs to the textured surface and inhibits the processing residue from peeling off and avoids contaminating the substrate in the processing chamber. Traditionally, an element having a textured surface is fabricated in a multi-step process. In the first process step, the component is fabricated. An external or integral structure, for example, a piece of metal can be cut into a desired structure by computer numerical control (CNC). Thereafter, a second process is used to form a textured surface on the machined component. For example, The surface texture processing may include grinding, bead blasting or polishing, or a combination of the above. In one case, a 5 1345 593 textured surface may be formed by directing an electromagnetic energy beam onto one of the surfaces of an element. Forming depressions and protrusions for treating the deposits to be well adsorbed. One embodiment of this surface is a Lavacoat plus surface, which can In such PoPi〇lkowski, who owned US Patent Publication case 2003-0173526, No. (3 years 2 billion square September 18 announcement, March 13, 2002 application): and
Popiolkowski等人擁有之美國專利案6 812 471號(2〇〇4年 1 1月2日核准)’此處將二文獻整體納入本文中作為參照。 φ LaVaC〇atTM表面至少包含凹陷及突起,其可供處理殘餘物 吸附至該處以便在基材處理過程中減低基板之污染。 然而,用來製造紋理元件之傳統製程通常很昂貴因 為需要多重製程步驟才能形成該元件及其紋理表面。製造 成本阻撓了故理元件之大量實作,即便該元件提供了許多 處理上之優點。傳統製造製程之成本至少部份肇因於在這 些製程中所用之複雜的多步驟製程程序,以及昂貴的製造 設備。舉例而言,元件製造機械,例如產生電磁能光束2 儀器’非常昂貴且可能大幅增加該紋理元件之製造成本 • 當用於整修表面紋理元件之洗淨製程在數個洗淨循環 後腐蝕該元件時,元件之製造時間及成本則成為更進—步 的問題。一旦殘餘物已累積在紋理元件上時,通常會執〜 一洗淨處理以移除殘餘物,並整修該元件以供重新使用 舉例而言’以至少包含HN〇3或HF之溶液重複洗淨紋理_ 件最終會腐蝕元件之紋理表面,而通常需要以新製成之_ 件來取代該腐蝕之元件。因此,製造新紋理表面元件之成 本會不利地增加操作處理室之相關成本。 6 1345593U.S. Patent No. 6,812,471 to Popiolkowski et al., the entire disclosure of which is incorporated herein by reference. The surface of the φ LaVaC〇atTM contains at least depressions and protrusions which allow the treatment residue to be adsorbed there to reduce contamination of the substrate during substrate processing. However, conventional processes for making textured elements are often expensive because multiple process steps are required to form the element and its textured surface. Manufacturing costs hinder a large number of implementations of procedural components, even though the components provide a number of processing advantages. The cost of traditional manufacturing processes is at least in part due to the complex multi-step process procedures used in these processes, as well as expensive manufacturing equipment. For example, component manufacturing machinery, such as the generation of electromagnetic energy beams 2 instruments, are very expensive and can significantly increase the manufacturing cost of the texture element. • When the cleaning process for refurbishing surface texture elements erodes the component after several cleaning cycles At the time, the manufacturing time and cost of components become a further problem. Once the residue has accumulated on the textural element, a cleaning process is usually performed to remove the residue and the element is refurbished for reuse, for example, 'repeated with a solution containing at least HN〇3 or HF. The texture _ piece will eventually corrode the textured surface of the component, and it is often necessary to replace the etched component with a new one. Therefore, the cost of manufacturing new textured surface components can disadvantageously increase the associated cost of operating the processing chamber. 6 1345593
因此,需要提出一種製造具有紋理之處理室元件 法,其相較於傳統製造製程更為廉價且有效率。更需 出一具有可供處理殘餘物良好吸附之紋理表面的元件 【實施方式】 一基板處理室至少包含可用以在一能量化氣體中 一基板的多個元件。該等元件之其中一或多者包含一 表面,使得在基板處理過程117產生之處理沈積物能夠 至該元件表面,以減低處理之基板受處理沈積物之污 吸附至處理室元件之紋理表面的處理沈積物可包括含 之沈積物,例如包含下列至少一者之沈積物:钽、氮仆 欽、氛化鈦、銘、銅、鶴、及氣化鶴。 所選處理室元件2 2之紋理表面2 0以及元件本身 型係藉由由一種適用於紋理表面元件之流動形成裝置 程來形成的,例如,第1Α及1Β圖中所示之裝置與繫 該流動形成裝置對一預型體24施加一壓力,以便將該 體之材料塑性變形並流過一心軸2 6,以提供元件2 2 的整體外型。可依需要來調整心軸 26,以便在與心4 接觸的預型體24之表面20上形成一預定紋理樣式。 而言,心轴2 6可能包含一紋理表面2 8。在所施加之 下,元件材料之塑性變形可模塑該預型體24之表面 以符合心軸表面2 8之纹理,因此可將至少一部份的心 面樣式轉移至最終處理室元件2 2。藉由提供一種特製 以創造所需表面紋理樣式3 4之心轴2 6 ’流動形成製 的方 要提 處理 紋理 吸附 染。 金屬 组、 之外 及製 程。 預型 所需 b 26 舉例 壓力 20, 軸表 成用 程可 7 1345593Therefore, there is a need to provide a method of fabricating a textured chamber component that is less expensive and efficient than conventional manufacturing processes. There is a further need for an element having a textured surface that is well adhered to the processing residue. [Embodiment] A substrate processing chamber contains at least a plurality of elements that can be used in a substrate in an energized gas. One or more of the elements include a surface such that the processing deposits produced during substrate processing 117 can be applied to the surface of the element to reduce contamination of the treated substrate by the treated deposit to the textured surface of the processing chamber element. The treatment deposit may comprise deposits comprising, for example, deposits comprising at least one of the following: niobium, niobium, titanium, magnesia, copper, cranes, and gasification cranes. The textured surface 20 of the selected processing chamber component 22 and the component itself are formed by a flow forming device suitable for use in textured surface elements, for example, the apparatus and apparatus shown in Figures 1 and 1 The flow forming device applies a pressure to a preform 24 to plastically deform the material of the body and flow through a mandrel 26 to provide the overall appearance of element 22. The mandrel 26 can be adjusted as needed to form a predetermined texture pattern on the surface 20 of the preform 24 that is in contact with the core 4. In other words, the mandrel 26 may include a textured surface 28 . Under application, plastic deformation of the component material can mold the surface of the preform 24 to conform to the texture of the mandrel surface 28, thereby allowing at least a portion of the cardioid pattern to be transferred to the final processing chamber component 2 2 . By providing a special design to create the desired surface texture pattern 3 4 ''''''''''' Metal group, outside and process. Preform Required b 26 Example Pressure 20, Axis Forming Process 7 1345593
有效並反覆形成不僅具有所需之整體外型且亦有所需 面紋理樣式34的元件22。 預型體24具有一預先選擇之尺及外型,該外型可 所需之最終元件22。適用於一流動形成製程的預型體 可以是,例如一圓錐形、圓柱形、似管狀及其他形狀 可在心轴26上模塑並順形之。傳統上,預型體具有圓 稱的軸,該轴和心轴26之對稱軸對齊。預型體24之 係製造得夠厚,因而在經過流動形成製程所造成之塑 形後,元件2 2之壁能夠得到理想之最終厚度。舉例Λ 預型體壁36之厚度比元件壁厚度多出一計算量,舉 言,至少5 %,以達到最終元件2 2之壁的理想最終厚 預型體2 4係由一具有相對較高延展性之金屬所製成, 在壓力下塑性變形,且實質上不會造成金屬之破裂 痕。合適的金眉可至少包含,如下列至少一者··紹、 不鏽鋼、鈦、及相關合金。形成預型體24之方法可包 壓成型、沖壓成型、CNC切削、壓型加工、以及習知 人士已知之其他金屬外型製造方法。 在流動形成製程中,預变體24至少包含一内表S 其可貼附至少一部份的心軸26之紋理表面28,且可 於心軸2 6之表面2 8上。心軸2 6為一流動形成裝置 一元件,該流動形成裝置5 2至少包含適用於元件2 2 動形成的其他部份。預型體24之第一端40可能是封 半封閉端,其可由一軸承5 6和/或尾座4 2握持’該 5 6和/或尾座4 2能夠施加一液壓以便將預型體2 4保 之表 形成 外型 ,其 形對 壁36 性變 】言, 例而 度。 其可 或裂 銅、 括深 技藝 I 20 > 放置 52的 之流 閉或 軸承 持在 8 1345593 適當位置。心軸26通常會繞其縱軸44旋轉,舉例而言, 藉由一馬達(此處未顯示)來同步旋轉心轴26與預型體 24。可將一加壓裝置46,例如壓力滚輪48,作用於預型體 2 4之一外表面5 0上,以將預型體材料塑性變形並沿著心 轴26之表面28的軸向流動。Effectively and repeatedly forming an element 22 that not only has the desired overall shape but also the desired surface texture pattern 34. The preform 24 has a pre-selected ruler and shape that can be used with the desired final element 22. Preforms suitable for use in a flow forming process may be, for example, a conical, cylindrical, tubular, and other shape that may be molded and conformed to the mandrel 26. Traditionally, the preform has a nominal axis that is aligned with the axis of symmetry of the mandrel 26. The preform 24 is made thick enough so that the wall of the member 22 can achieve a desired final thickness after being shaped by the flow forming process. Example Λ The thickness of the preform wall 36 is greater than the thickness of the component wall by a calculated amount, in other words, at least 5%, to achieve the desired final thickness of the wall of the final component 22, the preform is relatively high. Made of ductile metal, plastically deformed under pressure, and does not substantially cause cracks in the metal. Suitable gold eyebrows can comprise at least one of the following: ·, stainless steel, titanium, and related alloys. The method of forming the preform 24 can be by compression molding, press forming, CNC cutting, press forming, and other metal forming methods known to those skilled in the art. In the flow forming process, the pre-variant 24 includes at least an inner surface S which can be attached to at least a portion of the textured surface 28 of the mandrel 26 and which can be on the surface 28 of the mandrel 26. The mandrel 26 is an element of a flow forming device, and the flow forming device 52 includes at least other portions suitable for the formation of the element 22. The first end 40 of the preform 24 may be a semi-closed end that may be held by a bearing 56 and/or a tailstock 42. 'The 56 and/or the tailstock 42 can apply a hydraulic pressure to pre-form The body 2 is formed into a shape, and its shape is opposite to the wall 36. It can be either split copper or deepened. I 20 > Place 52 or close the bearing at 8 1345593. The mandrel 26 will typically rotate about its longitudinal axis 44, for example, by rotating a mandrel 26 and a preform 24 by a motor (not shown). A pressurizing means 46, such as a pressure roller 48, can be applied to an outer surface 50 of the preform 24 to plastically deform the preform material and flow axially along the surface 28 of the mandrel 26.
在所示具體實施例中,壓力滚輪48朝向預型體24之 第一端40移動,以將預型體材料朝向遠離預型體24之第 一端40的方向按壓而在心軸26上移動。施加高於其屈服 強度之壓力下,壓縮並塑形該預型體材料,以沿著心轴2 6 之表面2 8的轴向流動該材料。因此,壓力滾輪4 8藉由沿 著心軸2 6流動該預型體材料,以減低預型體2 4之壁3 6 的厚度並延長預型體24之壁36的長度。施加至外表面50 之壓力夠高足以塑性變形並流動該預型體材料,且實質上 不會造成材料之破裂或裂痕。所施加之壓力會隨著正在形 成之材料特性而改變。心軸及滾輪係相距一界定距離而作 配置,該距離可為恆定距離或可變距離,以建立該完成部 份之内及外表面間的關係。在一種態樣中,壓力滾輪48 可至少包含外型為圓形之滾輪,其適合藉由一馬達(此處 未顯示)以與心軸2 6之旋轉方向平行或反平行之方向來旋 轉之,且因此可在預型體24之外表面50上施加一徑向力。 壓力滾輪48亦可至少包含一前斜邊54,其可在預型體24 之外表面50上施加一軸向力,以驅使預型體材料於軸向方 向上經過心軸26之表面28。在一態樣中,在預型體24之 週邊上間隔放置複數個壓力滾輪48,且該等壓力滾輪48 9 1345593 亦可軸向及徑向地相間隔,以便在預型體外表面5 0之複數 個不同區域上施加壓力。In the particular embodiment shown, the pressure roller 48 is moved toward the first end 40 of the preform 24 to move the preform material toward the mandrel 26 in a direction away from the first end 40 of the preform 24. The preform material is compressed and shaped under pressure applied above its yield strength to flow the material along the axial direction of the surface 28 of the mandrel 26. Thus, the pressure roller 4 8 reduces the thickness of the wall 36 of the preform 24 and extends the length of the wall 36 of the preform 24 by flowing the preform material along the mandrel 26. The pressure applied to the outer surface 50 is sufficiently high to plastically deform and flow the preform material without substantially causing cracking or cracking of the material. The applied pressure will vary with the material properties being formed. The mandrel and the roller are arranged at a defined distance, which may be a constant distance or a variable distance to establish a relationship between the inner and outer surfaces of the finished portion. In one aspect, the pressure roller 48 can include at least a circular roller that is adapted to be rotated in a direction parallel or anti-parallel to the direction of rotation of the mandrel 26 by a motor (not shown). And thus a radial force can be applied to the outer surface 50 of the preform 24. The pressure roller 48 can also include at least a forward beveled edge 54 that exerts an axial force on the outer surface 50 of the preform 24 to urge the preform material through the surface 28 of the mandrel 26 in the axial direction. In one aspect, a plurality of pressure rollers 48 are spaced apart on the periphery of the preform 24, and the pressure rollers 48 9 1345593 are also axially and radially spaced apart so as to be on the outer surface of the preform. Apply pressure on a number of different areas.
該用於流動形成製程之心軸 26可根據意願加以調整 以提供最终流動形成元件 22所需的整體外型及表面紋理 樣式34。舉例而言,心軸26可至少包含適用於元件壁36 之所需長度的軸長。心軸 26亦可視需要而包含紋理表面 28,其適合形成一元件22之内表面20所需的表面紋理樣 式34。舉例而言,心轴26可至少包含一紋理表面28,其 具有一心轴表面樣式58,該樣式為處理室元件22所需之 表面紋理樣式3 4的倒像或鏡像。形成於元件2 2之表面2 0 上的表面紋理樣式 3 4為在流動形成製程過程中施加壓力 所產生的結果,該壓力將預型體材料按壓於心軸表面2 8 上,使得元件2 2之内表面實質上呈現心軸表面2 8之輪廓。 舉例而言,對於包含浮凸突起60a及凹陷60b之心軸表面 2 8,可將預型體材料按壓並流動至心軸表面 2 8中之凹陷 6 0b内,以在元件22之表面上形成包含突起3 Ob在内的相 對應倒像特徵3 0包含的,如第2圖中所示般。該預型體材 料亦可沿著心轴表面2 8上之突起6 0 a流動,以在元件表面 2 0中形成包含凹陷3 0的相對應倒像特徵3 0。可根據所需 之表面紋理樣式34來選擇提供於心軸表面28的特徵60, 且其可包含例如突起60a及凹陷60b’該等突起60a及凹 陷6 0b包含下列至少一者:隆起、孔洞、波紋(ridge)、凹 槽、及元件表面2 0可能需要之其他特徵。在一態樣中,心 軸26甚至包含在該心軸表面28 —區域内之突起60a及凹 10 1345593 陷60b的尺寸與分佈(spacing)不同於該心轴表面28 —不同 區域中的尺寸及分佈。在心轴26上流動形成元件22允許 形成具有預定尺寸及整體外型之元件22的表面20,且可 在該元件 22之表面上同時形成一所需之表面紋理樣式 34,因此提供了一種有效且改良之處理室元件 22製造方 式。The mandrel 26 for the flow forming process can be adjusted as desired to provide the overall profile and surface texture pattern 34 required for the final flow forming element 22. For example, the mandrel 26 can include at least an axial length suitable for the desired length of the component wall 36. The mandrel 26 may also include a textured surface 28, as desired, which is suitable for forming the surface texture pattern 34 required for the inner surface 20 of an element 22. For example, the mandrel 26 can include at least one textured surface 28 having a mandrel surface pattern 58 that is an inverted or mirror image of the desired surface texture pattern 34 of the process chamber component 22. The surface texture pattern 34 formed on the surface 20 of the element 2 2 is the result of applying pressure during the flow forming process that presses the preform material against the mandrel surface 28 such that the element 2 2 The inner surface substantially presents the contour of the mandrel surface 28. For example, for the mandrel surface 28 comprising the relief protrusion 60a and the recess 60b, the preform material can be pressed and flow into the recess 60b in the mandrel surface 28 to form on the surface of the element 22. The corresponding inverted image feature 30 including the protrusion 3 Ob is included as shown in FIG. The preform material may also flow along the protrusions 60 a on the mandrel surface 28 to form a corresponding inversion feature 30 comprising the recess 30 in the element surface 20. The features 60 provided on the mandrel surface 28 can be selected according to the desired surface texture pattern 34, and can include, for example, protrusions 60a and recesses 60b' that include at least one of: ridges, holes, Ridges, grooves, and other features that component surface 20 may require. In one aspect, the mandrel 26 even includes the protrusion 60a and the recess 10 1345593 in the region of the mandrel surface 28, the size and spacing of the recess 60b being different from the size of the mandrel surface 28 in different regions and distributed. Flowing the forming element 22 on the mandrel 26 allows the surface 20 of the element 22 having a predetermined size and overall shape to be formed, and a desired surface texture pattern 34 can be simultaneously formed on the surface of the element 22, thus providing an effective and Improved process chamber component 22 manufacturing.
在一態樣中,藉由在一具有交錯之突起62a及凹陷62b 的心轴2 6上流動形成一元件2 2以提供一種改良之表面紋 理樣式34,,該心軸例如第3圖中所示。該交錯之突起62a 及凹陷62b在元件22之表面20中形成一倒像表面紋理樣 式3 4,該倒像表面紋理樣式3 4包含相對應突起6 4 a及凹 陷64b,以允許將基板1 04處理過程中產生之處理殘餘物 吸附至紋理元件22之表面20,以減低殘餘物造成之基板 104之污染。心軸表面28中之突起62a可至少包含,舉例 而言,徵丘或隆起,其高度由心軸表面28之一平均表面高 度A測量起,至少約為0.005至0.050英吋。突起62a在 其二分之一高度處的寬度可介於約0.07至0.070英吋間。 心轴表面28之凹陷62b的深度包含低於該平均表面高度Λ 至少約0.005至0.050英吋,且凹陷62b在其二分之一深 度處的寬度介於約0.002至0.130英吋間。在流動形成元 件22之表面20中形成之突起64b及凹陷64a的尺寸實質 上相對應於心軸突起62a及凹陷62b之尺寸。 在一態樣中,紋理表面2 8至少包含一實質上欠缺銳角 及銳邊的表面橫切面’例如第3圖中所示者。該正弦曲線 π 1345593In one aspect, an element 2 2 is formed by flowing over a mandrel 26 having staggered projections 62a and recesses 62b to provide an improved surface texture pattern 34, such as that shown in FIG. Show. The staggered protrusions 62a and recesses 62b form an inverted image surface pattern 34 in the surface 20 of the element 22, the inverted image surface pattern 34 comprising corresponding protrusions 64a and recesses 64b to allow the substrate 104 to be The processing residue generated during processing is adsorbed to the surface 20 of the texturing element 22 to reduce contamination of the substrate 104 caused by the residue. The protrusion 62a in the mandrel surface 28 can comprise, for example, a ridge or ridge having a height of at least about 0.005 to 0.050 inches as measured by an average surface height A of the mandrel surface 28. The width of the projection 62a at its one-half height may be between about 0.07 and 0.070 inches. The depth of the recess 62b of the mandrel surface 28 comprises less than about 0.005 to 0.050 inches below the average surface height 吋, and the width of the recess 62b at its one-half depth is between about 0.002 and 0.130 inches. The size of the projection 64b and the recess 64a formed in the surface 20 of the flow forming member 22 substantially corresponds to the size of the mandrel projection 62a and the recess 62b. In one aspect, the textured surface 28 includes at least a surface cross-section that is substantially lacking an acute angle and a sharp edge, such as shown in Figure 3. The sine curve π 1345593
橫切面至少包含一類似正弦波之橫切面輪廓,且具有根據 所需之元件特性而選出的正弦曲線橫切面之波長及振幅。 該正弦曲線橫切面提供一種平滑變化之表面並具有交錯之 突起62a及凹陷62b以增進吸附處理殘餘物,並減低沈積 殘餘物可能因尖銳或突然表面轉換而發生之裂痕或斷裂。 合適的正弦曲線表面橫切面中,相鄰突起62a間之波峰至 波峰距離介於約 0 · 0 1 5至 0.1 8 0英吋,且及振幅介於約 0.0 0 5至0.0 5 0英吋。在一態樣中,心軸表面2 8至少包含 一第一正弦曲線橫切面與一第二正弦曲線橫切面,該第一 正弦曲線橫切面圍繞包覆著至少一部份的該心軸 2 6之軸 44,如第3圖中所示,該第二正弦曲線橫切面沿著該心軸 26之軸44縱向延伸,如第1圖中所示。在理想的情形中, 紋理表面28實質上現欠缺銳角66以及銳邊,且取而代之 的是其實質上包含圓角66及圓邊。The cross section includes at least a cross-sectional profile similar to a sine wave and has a wavelength and amplitude of a sinusoidal cross-section selected according to the desired component characteristics. The sinusoidal cross-section provides a smoothly varying surface and has staggered projections 62a and recesses 62b to enhance the adsorption process residue and to reduce cracking or fracture of the deposit residue that may occur due to sharp or sudden surface transitions. In a suitable sinusoidal surface cross-section, the peak-to-crest distance between adjacent protrusions 62a is between about 0·0 15 and 0.18 inches, and the amplitude is between about 0.005 and 0.050 inches. In one aspect, the mandrel surface 28 includes at least a first sinusoidal cross-section and a second sinusoidal cross-section, the first sinusoidal cross-section surrounding the at least one portion of the mandrel. The shaft 44, as shown in Fig. 3, extends longitudinally along the axis 44 of the mandrel 26, as shown in Fig. 1. In the ideal case, the textured surface 28 is substantially lacking the acute angle 66 and the sharp edges, and instead it substantially comprises the fillet 66 and the rounded edges.
亦可特製地設計心軸2 6,用以形成複雜且實質上非線 性之表面紋理樣式34,以便在基板104之處理中提供改良 之結果。此種複雜之表面樣式使得在流動形成製程之後, 難以自心軸2 6移除該流動形成元件2 2。舉例而言,對於 不允許元件2 2由心軸2 6滑動或扭轉之表面樣式3 4,自心 軸26移開元件22就非常具有挑戰性。此種本身不易將元 件22由心轴26扭轉或滑動的表面樣式34係包含交錯之突 起64b及凹陷64a的表面樣式34,因為心軸及元件突起 62a、64b可鎖定至心軸及元件凹陷62b、64a中。一般而 言,表面樣式34若未包含延伸至元件22至少一端40的線 12 1345593The mandrel 26 can also be specially designed to form a complex and substantially non-linear surface texture pattern 34 to provide improved results in the processing of the substrate 104. This complex surface pattern makes it difficult to remove the flow forming element 2 2 from the mandrel 26 after the flow forming process. For example, for a surface pattern 34 that does not allow element 22 to be slid or twisted by mandrel 26, removal of element 22 from mandrel 26 is very challenging. This surface pattern 34, which itself is not easily twisted or slid by the mandrel 26, includes the surface pattern 34 of the staggered protrusions 64b and recesses 64a because the mandrel and element projections 62a, 64b can be locked to the mandrel and the element recess 62b. , 64a. In general, surface pattern 34 does not include a line extending to at least one end 40 of element 22 12 1345593
性或螺旋凹陷3 0 a,則將其自心軸2 6上移除時都可能 挑戰。在一態樣中,藉著使心轴2 6可至少部份可折疊 適用於製造此種複雜表面樣式,使得在流動形成製程 可輕易自心軸2 6移除元件2 2。舉例而言,心轴2 6可 包含一空心内部區段70,在流動形成製程之後,可將 2 6之部份折疊於該空心内部區段7 0中,以提供一種 之心軸圓周並改善由心轴2 6移除元件2 2之簡易性。 而言,可將心軸2 6鉸接或以其他方式建構,而使得心 在其本身之上收折。在又另一態樣中,心軸26之表! 上的突起60a,例如正弦曲線橫切面突起62a,能夠在 形成之後,將之收回至心軸之空心内部區段中,以便 軸表面2 8「鬆脫」元件2 2。因此,該改良之心軸2 6 在元件22上形成實質欠缺沿著内元件22之内表面20 延伸之線性或螺旋凹陷的複雜表面樣式3 4,且不限於 線形或螺旋之表面樣式。 在另一態樣中,可藉由一種適當熱源加熱該元件 將該流動形成元件2 2自心軸2 6移除。元件2 2之膨脹 以使得其内表面20脫離心軸26上之突起64b與凹陷 的高度,而呈解開狀態,而得以由心軸26移除元件 所需之熱量隨著心轴26上突起64b及凹陷64a之深度 元件材料之熱脹係數而不同。 第4圖繪示一種由流動形成製程所製造之元件2 2 施例。元件2 2至少包含一遮罩1 2 0,舉例而言其適用 沈積室1 06。由一預型體24形成元件22,預型體24 面臨 ,而 後, 至少 心軸 較小 舉例 軸可 & 28 流動 由心 得以 長度 實質 ,而 至足 64a 22 > 以及 的實 於一 至少 13 1345593If the sex or spiral depression is 30 a, it can be challenged when it is removed from the mandrel 26. In one aspect, the at least partially foldable mandrel 26 is adapted to produce such a complex surface pattern such that the element 2 2 can be easily removed from the mandrel 26 in the flow forming process. For example, the mandrel 26 can include a hollow inner section 70 into which a portion of 26 can be folded after the flow forming process to provide a mandrel circumference and improve The simplicity of the element 2 2 is removed by the mandrel 26. In other words, the mandrel 26 can be hinged or otherwise constructed such that the heart folds over itself. In yet another aspect, the table of mandrels 26! The upper projection 60a, such as the sinusoidal transverse projection 62a, can be retracted into the hollow inner section of the mandrel after formation so that the shaft surface 28 "releases" the element 2 2 . Thus, the modified mandrel 26 forms a complex surface pattern 34 on the element 22 that is substantially lacking in linear or spiral depressions extending along the inner surface 20 of the inner member 22, and is not limited to a linear or spiral surface pattern. In another aspect, the flow forming element 22 can be removed from the mandrel 26 by heating the element by a suitable heat source. The element 2 2 expands such that its inner surface 20 is disengaged from the height of the projection 64b and the recess on the mandrel 26, and is unwrapped, and the heat required to remove the element from the mandrel 26 rises with the mandrel 26. The thermal expansion coefficients of the depth component materials of 64b and recess 64a are different. Figure 4 illustrates an embodiment of a component 2 2 fabricated by a flow forming process. Element 2 2 includes at least one mask 120, which for example applies to deposition chamber 106. The element 22 is formed by a preform 24, and the preform 24 faces, and then at least the mandrel is smaller. For example, the axis can be & 28 flow from the heart to the length of the body, and to the foot 64a 22 > and the actual one at least 13 1345593
包含圓柱形側壁3 6,可在流動形成製程中將圊柱 按壓至所需之遮罩壁長度及厚度。具有遮罩120 的内表面20包含所需之表面紋理樣式34(此處 以供處理殘餘物吸附至該處以減低對已處理基板 染。因此,該流動形成方法能夠在一單一處理步 供具有所需之整體外型及表面紋理之元件22,因 一種更有效率且可重複形成元件22之方式。 將由流動形成方法所形成之不同態樣的具 20元件22用於一基板處理室106中,第5圖中 板處理室的示範性實施例。處理室1 06為一多處 (此處未顯示)之一部份,多處理室平台具有由 臂機構互相連結之處理室所構成的群集設備,一 機構可在該等處理室1 06之間輸送基板1 04a。在 施例中,處理室1 〇 6至少包含一濺鍍沈積室’亦 物理氣相沈積或P V D處理室,其能夠將材料濺鍍 基板1 0 4 a上,例如下列之一或更多者材料:鈕、 鈦、氮化鈦、銅、鎢、及氮化鎢、及鋁等。處理 少包含外罩壁118其可圈圍出一處理區109且夕 包括多個側壁164、一下壁166及一頂壁168。可 壁164及頂壁168間放置一支撐環130,以支撐7 其他處理室壁可包括一或多個遮罩120以便將外 與濺鍍環境隔絕開來。 處理室1 06至少包含一基板支撐件1 1 4,以 沈積室106中之基板。基板支撐件Π4可電子漂 形側壁36 之元件22 未顯示), 1 0 4的污 驟中,提 而提供了 紋理表面 顯示了基 理室平台 一機械手 機械手臂 所示之實 稱為一種 沈積於一 氛化妓、 室106至 、罩壁11 8 在該等側 頁壁168 ° •罩壁1 1 8 支撐濺鍍 浮或可包 14 1345593The cylindrical side wall 362 is included to press the mast to the desired mask wall length and thickness during the flow forming process. The inner surface 20 having the mask 120 contains the desired surface texture pattern 34 (wherein the processing residue is adsorbed thereto to reduce staining of the treated substrate. Thus, the flow forming method can be provided in a single processing step The overall shape and surface texture of the element 22 is due to a more efficient and repeatable formation of the element 22. The 20 elements 22 of different aspects formed by the flow forming method are used in a substrate processing chamber 106, 5. An exemplary embodiment of a plate processing chamber in the drawing. The processing chamber 106 is part of a plurality of locations (not shown here) having a cluster of processing chambers interconnected by arm mechanisms. A mechanism can transport the substrate 104a between the processing chambers 106. In the embodiment, the processing chamber 1 〇6 includes at least a sputtering deposition chamber 'also a physical vapor deposition or PVD processing chamber capable of splashing material On the substrate 1 0 4 a, for example, one or more of the following materials: button, titanium, titanium nitride, copper, tungsten, and tungsten nitride, and aluminum, etc. The treatment less includes the outer cover wall 118 and can be encircled a processing area 109 and including a plurality of side walls 164, a lower wall 166 and a top wall 168. A support ring 130 is placed between the wall 164 and the top wall 168 to support 7 other processing chamber walls may include one or more masks 120 for external and sputtering The process chamber 106 includes at least one substrate support member 112 to deposit the substrate in the chamber 106. The substrate support member 4 can be electronically floated on the side wall 36 of the component 22 (not shown), In addition, the textured surface is provided to show that the basement platform is shown by a robotic arm. It is actually deposited as a condensed sputum, chamber 106 to the cover wall 11 8 at the side wall 168 ° • Cover wall 1 1 8 support splash floating or can be wrapped 14 1345593
電極170,其可由例如RF電源供應等電源供 進仃偏壓。基板支撐件114亦可支撐其他晶圓1〇4 可移動快門片(shUtter disc)1〇4b,當基板1〇4a不存 r、可保護支樓件114之上表面134。在操作時,經 處理室106之一側壁1M中的一基板載入口(此處> 將基板l〇4a引入處理室1〇6中,並將基板i〇4a放 '牛114上。在輸送基板進出處理室之過 可由支撐升降伸縮裝置來抬高或低該支撐件114, 用-升降指部組件(此處未顯示)將基板抬高或降 撐件1 1 4上。 、/ 今、 π如一違 沈積環128,其可覆蓋支撐件114之上表面134 部份,以抑制支撐件Π 4之腐蝕。在—態樣中,; 至少部份環繞該基板104a,以保護支撐件HA 1 〇4a所覆蓋住的部份。蓋環丨26環繞並覆蓋至^ 沈積環1 28之,且可減低粒子在沈積環128及飞 1 1 4二者上之沈積。 〃經由-氣體運送系統112將一處理氣體,例如 :體’導入處理室106中’氣體運送系統ιΐ2包括 軋體供應’其包含-或多個氣體來源1 74,該等氣 174個別可饋送至—導管176,該導管176具有一氣 控制閥1 78,例如—質量流動控制器,以便在其中 =定流動速率之氣體。導管176可將氣體饋送至— 官(此處未顯示),氣體可在其中混合以形成一所需 應 172 例如一 在時, 由位於 ^顯示) 置於支 程中, 且可利 低至支 126或 至少一 環128 被基板 部份的 支撐件 一錢嫂 一處理 體來源 體流動 傳送一 混合歧 之處理 15 1345593Electrode 170, which can be biased by a power source such as an RF power supply. The substrate support member 114 can also support other wafers 1〇4 shUtter discs 1〇4b, and protect the upper surface 134 of the branch member 114 when the substrate 1〇4a is absent. In operation, a substrate carrying inlet in the side wall 1M of one of the processing chambers 106 (here > introduces the substrate 10a into the processing chamber 1〇6, and places the substrate i〇4a on the 'bovine 114. The conveying substrate can be raised or lowered by the supporting lifting and contracting device to raise or lower the supporting member 114, and the substrate is raised or lowered by the lifting/lowering finger assembly (not shown here). π, like a deposition ring 128, which covers the upper surface 134 of the support member 114 to inhibit corrosion of the support member 4. In the aspect, at least partially surrounds the substrate 104a to protect the support member HA. The portion covered by 〇4a. The cover ring 环绕 26 surrounds and covers the deposition ring 1 28 and reduces the deposition of particles on both the deposition ring 128 and the fly 141. 〃 via-gas delivery system 112 a process gas, such as a body 'introduction into the processing chamber 106, 'the gas delivery system ι 2 includes a rolling stock supply' which contains - or a plurality of gas sources 1 74, which may be individually fed to a conduit 176, the conduit 176 has a gas control valve 1 78, such as a mass flow controller, in which a gas at a rate. The conduit 176 can feed the gas to the official (not shown here), and the gas can be mixed therein to form a desired 172, for example, at time, placed in the branch, and The profit can be as low as 126 or at least one ring 128 is supported by the substrate portion of the support member.
氣體組成。該混合歧管可饋送氣體至一氣體分配器 在處理室106中具有一或多個氣體出口 182。該處 可包含一惰性氣體,例如氬或氙,其能夠積極衝擊 並自靶材濺鍍出靶材材料。處理氣體可亦至少包含 性氣體,例如下列之一或更多者:含氧氣體及一含f 其能夠和濺鍍之材料反應,以便在基板 l〇4a上形 層。可經由一排氣裝置122將使用過之處理氣體及 由處理室1 06排出,該排氣裝置包括_或多個排氣 其可接收使用過之處理氣體並將該使用過之氣體傳 排氣導管1 8 6,其中有一節流閥1 8 8用以控制處理 中氣體之壓力。排氣導管186可饋入一或多個排氣3 傳統上,將處理室1 06中之濺鍍氣體的壓力設定為 氣壓程度。 濺鍍處理室106至少更包含一濺鍍靶材124,靶 面對基板 l〇4a之一表面 105且至少包含將濺鍍 1 0 4 a上之材料,材料例如,下列至少一者:组、氣 可藉由一環狀絕緣環1 3 2將靶材1 24與處理室1 06 離開來,並該靶材1 2 4係連接至一電源供應1 9 2。靶 可至少包含一靶材背襯板,該靶材背襯板具有暴露 室106中之一靶材邊緣125。濺鍍處理室106亦具 罩 120以保護處理室106之一壁 118不致接觸濺 料。遮罩1 2 0可至少包含一似壁圓柱形外型,其具 及下方遮罩部份120a、120b,可防護處理室106之 下方區域。在第4圖所示之實施例中,遮罩120具 180其 理氣體 一靶材 一反應 ,氣體1 成一膜 副產品 埠184 送到一 室 106 艮 190 ° 低於大 材124 至基板 化组。 電性隔 材124 於處理 有一遮 鍍之材 有上方 上方及 有裝配 16 1345593 至該支撐環丨3〇的一上方部份120a以及裝配至蓋環i26 的下方部份l2〇b。亦可提供一失合裝置遮罩(damp shield) 14卜其至少包含一夾環,以便將上方及下方遮罩部 份1 2 0 a、b失合在一起。亦可利用替代性遮罩組態,例如 内部及外部遮罩。在一態樣中’電源供應192、托材124 及遮罩120之其中一者或多者可作為一能夠能量化該濺鍍 氣體以便自粑材124濺擊出材料的氣體能量化器116。相 對於遮罩1 20,電源供應1 92可施加一偏壓給靶材1 24。在 處理室106中由所施加之電壓產生的電場能夠能量化該濺 鍍氣體以形成—電漿,該電漿能夠積極衝擊並撞擊靶材 124以便將材料自靶材124濺鍍下來並轉移到基板1〇“ 上。具有電極170及支撐電極電源供應172的支撐件n4 亦可作為氣體能量化器116之一部份,其可能量化由靶材 124濺擊下來的離子化材料並使之加速朝向基板1〇4&。此 外,可提出一氣體能量化線圈135,其係由一電源供應192 供電且係置於處理室106中,以提供經強化之能量化氣體 特性,例如改良之能量化氣體密度β可由連接至—遮罩12〇 或處理室106中之另一壁的一線圈支撐件137來支撐氣體 能量化線圈135。 可由一控制器丨94來控制處理室1 〇6 ,該控制器至少 包含:一具有指令集的程式碼,用以操作處理室1〇6之多 個元件於該處理室1〇6中處理該基板104a。舉例而言,控 制器1 9 4可至少包含—基板定位指令集,其可操作基板支 撐件114及基板運輸裝置之一或多者以將基板1〇4a定位於 17 1345593 處理室106中;一氣體流動控制指令集,其可操作流動控 制閥178以設定濺鍍氣體流勤至處理室1〇6; _氣體壓力 控制指令集,其可操作排氣節流閥丨88以維持處理室1 中之壓力,一氣體能量化器控制指令集,其可操作氣體 月b量化器116以設定一氣體能量化之電量程度;一溫度控 制指令集,其可用於控制處理室1〇6中之溫度;以及一處 理監控指令集,其可用於監控處理室1〇6中之製程。Gas composition. The mixing manifold can feed gas to a gas distributor having one or more gas outlets 182 in the processing chamber 106. This may include an inert gas such as argon or helium that is capable of actively impacting and sputtering the target material from the target. The process gas may also contain at least a gas, such as one or more of the following: an oxygen-containing gas and a f-containing material capable of reacting with the sputtered material to form a layer on the substrate 10a. The used process gas can be discharged via a venting device 122 and discharged from the processing chamber 106, the exhaust device comprising _ or a plurality of exhaust gases that can receive the used process gas and vent the used gas The conduit 1 8 6 has a throttle valve 1 8 8 for controlling the pressure of the gas in the process. The exhaust conduit 186 can feed one or more exhaust gases 3 conventionally, setting the pressure of the sputtering gas in the processing chamber 106 to a gas pressure level. The sputtering processing chamber 106 further includes at least one sputtering target 124, the target facing one surface 105 of the substrate 10a and including at least a material to be sputtered on the silicon material, for example, at least one of the following groups: The gas can be separated from the processing chamber 106 by an annular insulating ring 133, and the target is connected to a power supply 192. The target can include at least one target backing plate having one of the target edges 125 in the exposure chamber 106. The sputter processing chamber 106 also has a cover 120 to protect one of the walls 118 of the processing chamber 106 from contact with the spatter. The mask 120 may include at least one wall-like cylindrical profile having lower mask portions 120a, 120b that protect the area below the processing chamber 106. In the embodiment shown in Fig. 4, the mask 120 has a reaction between the gas and the target, and the gas 1 is formed into a film by-product 埠 184 which is sent to a chamber 106 艮 190 ° below the material 124 to the substrate group. The electrical spacer 124 is processed to have a glazing material above and has an upper portion 120a of the assembly 16 1345593 to the support ring 〇3〇 and a lower portion l2〇b fitted to the cover ring i26. A trip shield 14 can also be provided which includes at least one clamp ring for uncoupling the upper and lower mask portions 1 20 a, b together. Alternative mask configurations, such as internal and external masks, can also be utilized. In one aspect, one or more of the power supply 192, the susceptor 124, and the mask 120 can act as a gas energyizer 116 that can energize the sputtering gas to splatter the material from the sputum 124. The power supply 1 92 can apply a bias to the target 1 24 relative to the mask 1 20 . The electric field generated by the applied voltage in the processing chamber 106 can energize the sputtering gas to form a plasma that can positively impact and strike the target 124 to sputter material from the target 124 and transfer to The substrate 1"". The support n4 having the electrode 170 and the supporting electrode power supply 172 may also be part of the gas energyizer 116, which may quantify and accelerate the ionized material splashed by the target 124. Towards the substrate 1〇4& In addition, a gas energization coil 135 can be provided that is powered by a power supply 192 and placed in the processing chamber 106 to provide enhanced energized gas characteristics, such as improved energyization. The gas density β may be supported by a coil support 137 connected to the mask 12 or another wall in the process chamber 106. The process chamber 1 〇6 may be controlled by a controller 丨94, the control The device includes at least one code having an instruction set for operating a plurality of components of the processing chambers 1 to 6 to process the substrate 104a in the processing chambers 1 to 6. For example, the controller 194 may include at least - Substrate a positioning instruction set operable to one or more of the substrate support 114 and the substrate transport device to position the substrate 1〇4a in the processing chamber 106; a gas flow control command set operable to control the flow control valve 178 Setting the sputtering gas to the processing chamber 1〇6; _ gas pressure control command set, which can operate the exhaust throttle valve 丨88 to maintain the pressure in the processing chamber 1, a gas energizer control instruction set, which can Operating gas month b quantizer 116 to set a degree of energy for energizing a gas; a temperature control command set that can be used to control the temperature in process chambers 1〇6; and a process monitoring instruction set that can be used to monitor process chamber 1 The process in 〇6.
具紋理表面20之處理室元件22可至少包含,例如, 亂體運送系統112、基板支撲件114、處理套組139、氣體 能量化器116、處理室外罩壁ns及遮罩120、或處理室 1〇6之氣體排氣裝置122等不同工藝領域。舉例而言,具 紋理表面20之處理室元件22可包括一處理室外罩壁The processing chamber component 22 of the textured surface 20 can include, for example, a messy transport system 112, a substrate flapper 114, a processing kit 139, a gas energyifier 116, a process enclosure wall ns and a mask 120, or a process Different process areas such as the gas exhaust unit 122 of the chamber 1〇6. For example, the processing chamber component 22 having the textured surface 20 can include a processing enclosure wall
118、一處理室遮罩120、一乾材124、一乾材邊緣125、 一處理套組1 3 9之一元件(例如一蓋環1 2 6及一沈積環1 2 8 之至少一者)、一支撐環1 3 〇、絕緣環丨3 2、一線圈1 3 5、 線圈支榜件137、快門片104b、夾合遮罩141、及一部份 的基板支撐件11 4。舉例而言,具紋理表面之元件可包括 應用材料公司之產品編號 0020-50007、0020-50008、 0020- 50010 、 0020-50012 、 0020-50013 、 0020-48908 、 0021- 23852 、 0020-48998 、 0020-52149 、 0020-51483 、 0020-49977 、 0020-52151 、 0020-48999 、 0020-48042 及 01 9 0- 1 4 8 1 8 ,來自 Applied Materials, Santa Clara, California。此元件清單僅為例示,且其他元件或來自其他 類型處理室之元件亦可具有紋理表面;因此,本發明不應 18 1345593118, a processing chamber mask 120, a dry material 124, a dry material edge 125, a processing kit 139 one of the components (such as at least one of a cover ring 126 and a deposition ring 1 2 8), The support ring 13 3 绝缘, the insulating ring 丨 3 2, a coil 1 3 5, a coil support member 137, a shutter piece 104b, a sandwich mask 141, and a portion of the substrate support member 11 4 . For example, a textured surface component may include Applied Materials' product numbers 0020-50007, 0020-50008, 0020-50010, 0020-50012, 0020-50013, 0020-48908, 0021- 23852, 0020-48998, 0020 -52149, 0020-51483, 0020-49977, 0020-52151, 0020-48999, 0020-48042 and 01 9 0- 1 4 8 1 8 from Applied Materials, Santa Clara, California. This list of components is merely exemplary, and other components or components from other types of processing chambers may also have textured surfaces; therefore, the invention should not be 18 1345593
限於所列或此處所示之元件。 此處參照本發明之某些較佳具體實施例來描述 明;然而亦可能有其他實施例。舉例而言,流動形成 可用於其他類型之應用中,例如,習知技藝人士可輕 解其可作為蝕刻室之元件。亦可利用其他之流動形成 組態,且亦可提出除了此處具體所述之樣式以外的心 面樣式。此外,習知技藝人士可輕易了解到,亦可參 述實施例之參數來運用和本文所述流動形成方法等效 代性步驟。因而,後附申請專利範圍之精神及範圍不 於此處所述之較佳具體實施例的描述。 【圖式簡單說明】 參照闡明本發明實施例的敘述内容、所附申請專 圍以及圖式可進一步了解本發明之上述特徵、態樣、 點。然而,可以理解,這些特徵之每一者通常皆可用 發明中,而不僅限於特定圓式中所繪示之情況,且本 包括這些特徵之任意組合,其中圖式如下’· 第1A圖為部份側視剖面圖,繪示一種用以執行 動形成製程之裝置的一具體實施例; 第1B圖為第1A圖之裝置在流動形成製程中處於 同位置時的另一視圖; 第2圖為部份側視剖面圖,繪示藉由流動形成製 形成之一種具紋理内表面的元件; 第3圖為部份前視剖面圖,繪示一用於流動形成 本發 元件 易了 裝置 袖表 照所 之替 應限Limited to the components listed or shown here. The invention is described herein with reference to certain preferred embodiments of the invention; however, other embodiments are possible. For example, flow formation can be used in other types of applications, for example, those skilled in the art can appreciate that it can be used as an element of an etch chamber. Other flows can also be used to form the configuration, and can also be presented in addition to the styles specifically described herein. Moreover, it will be readily apparent to those skilled in the art that the parameters of the examples can be used to apply the equivalent steps of the flow forming methods described herein. Therefore, the spirit and scope of the appended claims are not to be construed as the description of the preferred embodiments. BRIEF DESCRIPTION OF THE DRAWINGS The above features, aspects, and points of the present invention can be further understood by referring to the description of the embodiments of the invention. However, it will be understood that each of these features is generally available in the invention, and is not limited to the ones illustrated in the particular circle, and includes any combination of these features, wherein the drawings are as follows '· Figure 1A is a portion A side elevational cross-sectional view showing a specific embodiment of a device for performing a motion forming process; FIG. 1B is another view of the device of FIG. 1A in the same position during a flow forming process; Partial side cross-sectional view showing a textured inner surface formed by flow formation; Figure 3 is a partial front cross-sectional view showing a flow sleeve for flow forming the device Photocopying limit
利範 及優 於本 發明 一流 一不 程所 製程 19 1345593 之具紋理表面的心軸具體實施例; 第4圖為一部份側面圖式,繪示一利用流動形成製程 所形成的遮罩具體實施例;以及 第5圖為一部份側面剖面圖,繪示具有一或更多流動 形成元件之處理室的具體實施例。Lifan and a preferred embodiment of a textured surface that is superior to the first-class process of the present invention, 19 1345593; Figure 4 is a partial side view showing a mask implementation formed by a flow forming process And FIG. 5 is a partial side cross-sectional view showing a specific embodiment of a processing chamber having one or more flow forming elements.
【主要元件符號說明】 20 内表面 22 元件 24 預型體 26 心轴 28 紋理表面 30a 倒像特徵 30b 突起 34 樣式 36 元件壁 40 第一端 42 尾座 44 縱軸 46 加壓裝置 48 壓力滾輪 50 外表面 52 裝置 56 軸承 5 8 表面樣式 60 浮凸突起 60 凹陷 62 交互之突起 62 凹陷 64 凹陷 6 6 轉角 64 相對應突起 70 空心内部區段 104 基板 105 表面 106 處理室 109 處理區 112 氣體運送系 統 114 基板支撐件 116 氣體能量化 器 118 外罩壁 20 1345593[Main component symbol description] 20 Inner surface 22 Element 24 Preform 26 Mandrel 28 Textured surface 30a Inverted feature 30b Protrusion 34 Style 36 Element wall 40 First end 42 Tailstock 44 Vertical axis 46 Pressurizing device 48 Pressure roller 50 Outer surface 52 device 56 bearing 5 8 surface pattern 60 embossing protrusion 60 recess 62 alternating protrusion 62 recess 64 recess 6 6 corner 64 corresponding protrusion 70 hollow inner section 104 substrate 105 surface 106 processing chamber 109 processing area 112 gas transport system 114 substrate support 116 gas energyifier 118 housing wall 20 1345593
120 遮 罩 122 排 氣 裝 置 124 濺 鍍 靶 材 125 靶 材 邊 緣 126 蓋 環 128 沈 積 環 130 支 撐 環 132 絕 緣 環 134 上 表 面 135 氣 體 通 電 線圈 137 線 圈 支 撐件 139 處 理 套 組 14 1 夾 合 遮 罩 164 側 壁 166 下 壁 168 頂 壁 170 電 極 172 電 源 供 應 174 氣 體 來 源 176 導 管 178 閥 180 氣 體 分 配 器 182 氣 體 出 D 184 排 氣 埠 186 排 氣 導 管 188 即 流 閥 190 排 氣 泵 192 電 源 供 應 194 控 制 器120 Mask 122 Exhaust device 124 Sputter target 125 Target edge 126 Cover ring 128 Deposition ring 130 Support ring 132 Insulation ring 134 Upper surface 135 Gas energized coil 137 Coil support 139 Treatment kit 14 1 Sandwich mask 164 Sidewall 166 Lower wall 168 Top wall 170 Electrode 172 Power supply 174 Gas source 176 Conduit 178 Valve 180 Gas distributor 182 Gas out D 184 Exhaust 埠 186 Exhaust duct 188 Immediate valve 190 Exhaust pump 192 Power supply 194 Controller
21twenty one
Claims (1)
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| TW95133939A TWI345593B (en) | 2006-09-13 | 2006-09-13 | Flow-formed chamber component having a textured surface |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| TW95133939A TWI345593B (en) | 2006-09-13 | 2006-09-13 | Flow-formed chamber component having a textured surface |
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| TW200813248A TW200813248A (en) | 2008-03-16 |
| TWI345593B true TWI345593B (en) | 2011-07-21 |
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| TW95133939A TWI345593B (en) | 2006-09-13 | 2006-09-13 | Flow-formed chamber component having a textured surface |
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| TW (1) | TWI345593B (en) |
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| TW200813248A (en) | 2008-03-16 |
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