TWI231649B - Automatic level correction apparatus with lower current loss for digital input circuit - Google Patents
Automatic level correction apparatus with lower current loss for digital input circuit Download PDFInfo
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- TWI231649B TWI231649B TW93112166A TW93112166A TWI231649B TW I231649 B TWI231649 B TW I231649B TW 93112166 A TW93112166 A TW 93112166A TW 93112166 A TW93112166 A TW 93112166A TW I231649 B TWI231649 B TW I231649B
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- 239000003990 capacitor Substances 0.000 claims description 7
- 230000008859 change Effects 0.000 claims description 7
- 229910044991 metal oxide Inorganic materials 0.000 claims description 6
- 150000004706 metal oxides Chemical class 0.000 claims description 6
- 239000004065 semiconductor Substances 0.000 claims description 5
- 239000004020 conductor Substances 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 230000005611 electricity Effects 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 238000005259 measurement Methods 0.000 description 2
- 238000012360 testing method Methods 0.000 description 2
- 101150110971 CIN7 gene Proteins 0.000 description 1
- 101150110298 INV1 gene Proteins 0.000 description 1
- 101710116850 Molybdenum cofactor sulfurase 2 Proteins 0.000 description 1
- KJTLSVCANCCWHF-UHFFFAOYSA-N Ruthenium Chemical compound [Ru] KJTLSVCANCCWHF-UHFFFAOYSA-N 0.000 description 1
- 101100397044 Xenopus laevis invs-a gene Proteins 0.000 description 1
- 230000009471 action Effects 0.000 description 1
- 230000032683 aging Effects 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 230000003111 delayed effect Effects 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 230000018109 developmental process Effects 0.000 description 1
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- 229910052707 ruthenium Inorganic materials 0.000 description 1
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Description
1231649 五、發明說明(1) 【發明所屬之技術領域】 入電極低漏電流之自動準位數位輸 “當電L”啟時,且輸入端浮接,此電路裝 罝會在輸入端產生一固定電壓 此-電路裝置會在電源開啟且疋*接, ,而於外部電路改變狀態時,:於:’ :2後自動失效 功率消耗;: = 地跟隨改變,且不會產生額外的 ,可適用於各式電路及系統。冑準位數位輸人電路裝置 【先前技術】 期以作各類資訊電子產品電路的方式,早 别Μ類比式的作動原理 丁 原理與技術所取代&最明海=重=决速地被數位式的作動 咖也 〜 取月顯的事例,即是以雷曰iS* &处古 空管,得到大幅縮小電路體藉…」疋以電曰曰體取代真 =之微處理器,成為促成第三: 即邏於= 種電壓輸*, 〇w)準位。一般爽 n 8 )準位或低(1 電路之浮接輸入填f δ ’备電源開始供應時,即提供數位1 …)-個明確上丄上::1 土 ηΡ 考用…,數:ΪΪ3位,以做為電路初始狀態之參 老化所產生之輸:ί::忽略微小的電壓差異,且對零件 别出你移有較大之容許度。 1231649 五、發明說明(2) 參® t第4圖所不,利用一電阻直接接到電壓源v d d, 7。TtH d開:供應時,即可經由電阻R 0為輸出端 r μ η提供一咼數位準位,也可以將電源改為接地( 二提供=位準位。之後,外部電路可根據需求 自订棱供輸入(I Ν )數位準位以輸入到内部電路。 :而,當供應電源時,即為輸出# (〇υτ)提供高 入端(’ f:部電路提供低數位準位用以輸入輪 時,即會經由電阻R 〇產生額外的電流消耗 n點對於低功率消耗電路會產生相當大的阻礙。 器二η:所以重•’主要係因其不僅造成電源供應 要的是會造成積體電路(1 c)附近之溫度 ^ 了一曰Φ C兀件因過熱而致使電子電路發生故障。因 t A 一電阻R 〇產生額外的電流消耗,則會對整體電+ 電路產生極大之影響。 則I釕埜骽1:子 驗與ί:::’ΐ發明人累積多年於半導體產業之實務經 電路之電壓狀能長久的設計研究,終於設計出可因應 又可適跟隨改變’且不會產生額外的功率消耗 數位輸入電路:路及系統之具有極低漏電流之自動準位 【發明内容】 準位具有極低漏電流之自動 及門問電路之::裝充放電電路、t晶體電路 該輸出端與輸入端電路:抓::㊁J狀態時’可使位於 電路上p又之B點電壓狀態容易地跟隨改1231649 V. Description of the invention (1) [Technical field to which the invention belongs] The automatic quasi-digit input of low leakage current of the input electrode "when electricity L" is turned on, and the input terminal is floating, this circuit installation will produce a Fixed voltage This-the circuit device will be turned on when the power is turned on, and when the external circuit changes state: after: ': 2 automatically loses power consumption; = = the ground follows the change, and there is no additional, can be Suitable for all kinds of circuits and systems.胄 Quasi-digit input circuit device [previous technology] It is expected to be used as a circuit for various types of information electronic products, and it will be replaced by the principle of analogy. Principles and technology will be replaced by & the most bright sea = heavy = determined speed. It also takes the example of Yuexian, that is, using iS * & ancient air traffic control to obtain a significantly reduced circuit body borrowed ... "instead of the microprocessor of the true = with the electric body, becoming the enabler Third: That is, logic = voltage input *, 〇w) level. Generally cool n 8) level or low (floating input of circuit 1 fills in f δ 'when the standby power supply is supplied, it provides digital 1…)-a clear upper line: 1: 1 η ρ test ..., number: ΪΪ 3 Bits, as the input of the aging of the circuit in the initial state: ί :: Ignore the slight voltage difference, and have a greater tolerance for parts that you can move. 1231649 V. Description of the invention (2) As shown in Figure 4 t, a resistor is directly connected to the voltage source v d d, 7. TtH d on: When supplying, you can provide a digital level for the output terminal r μ η via the resistor R 0, or you can change the power supply to ground (two provide = level. After that, the external circuit can be customized according to demand The edge is used for inputting the (I Ν) digital level to input to the internal circuit. And, when the power is supplied, it provides the high input terminal for the output # (〇υτ) ('f: the circuit provides the low digital level for input During the round, an additional current consumption n point will be generated through the resistor R 0, which will cause a considerable obstacle to the low power consumption circuit. Device two η: So heavy • 'Mainly because it not only causes the power supply to cause the product. Temperature near the body circuit (1 c) ^ One day Φ C element overheated and caused the electronic circuit to fail. Because t A-resistance R 〇 generates additional current consumption, it will have a great impact on the overall electrical + circuit Then I ruthenium wild 骽 1: sub-test with ί ::: 'ΐ the inventor has accumulated many years of practical experience in the semiconductor industry through the design of voltage-like circuits for a long time, and finally designed to respond to changes that can be appropriately followed' Will cause additional power consumption Bit input circuit: Automatic level of circuit and system with very low leakage current [Contents of the invention] Automatic level and gate circuit with extremely low leakage current: Install the charge and discharge circuit, t crystal circuit, the output terminal and input End circuit: Grab :: ㊁J state, 'can make the voltage state at point p and point B on the circuit easily follow the change
第7頁 1231649 五、發明說明(3) 變,且不會產生額外的功率消耗。 曰為達到上述之目的,本發明使用··一充放電電路、一 ^曰曰體電路及一門閂電路,其中該充放電電路一端連接有 一電壓源’其另端接地,該電晶體電路之源極係與上述之 電f源相連接’其汲極連接於該門閂電路與電路輸出端間 之點’該點為B點,該電晶體電路之閘極則與該充放電 電,相連接’藉此,當外部電路改變狀態時,B點狀態即 可容易的跟隨改變,降低功率消耗。 為了便於對本發明能有更深入的瞭解,茲藉實施例詳 述於後。Page 7 1231649 V. Description of the invention (3) changes without additional power consumption. In order to achieve the above-mentioned object, the present invention uses a charge-discharge circuit, a body circuit and a latch circuit, wherein one end of the charge-discharge circuit is connected to a voltage source, and the other end is grounded, the source of the transistor circuit The pole is connected to the above-mentioned electric f source. 'The drain is connected to the point between the latch circuit and the circuit output.' The point is point B. The gate of the transistor circuit is connected to the charge and discharge. With this, when the external circuit changes state, the state at point B can easily follow the change, reducing power consumption. In order to facilitate a deeper understanding of the present invention, the embodiments are described in detail below.
【實施方式】 μ參閱第1及2圖,本發明之作用方塊圓係包括··充 :$電路1 0、電晶體電路2 0、門閂電路3 0及緩衝器 放電電路1 〇包括電阻1 1及電容1 2 ,電晶體 係為金屬氧化半導體電晶體PMOS,其包括源 、2極2 2及汲極2 3 ,門閂電路3 〇則包括反相 器 J 1 、 3 2 〇[Embodiment] Referring to Figures 1 and 2, the function block circle of the present invention includes: charge: $ circuit 10, transistor circuit 20, latch circuit 30, and buffer discharge circuit 1 including resistor 1 1 And capacitor 1 2, the transistor system is a metal oxide semiconductor transistor PMOS, which includes a source, 2 poles 22 and a drain 2 3, and the latch circuit 3 〇 includes inverters J 1, 3 2 〇
電壓位ΐ:T ί上:電容1 2及閘極間2 2之電壓為A 12,電六1 9 端與電壓源vdd連接’一端連接電 導體電晶體阻1 接之端接地,金屬氧化 極2 3遠蛀·空认S之源極2 1與電壓源v d d連接, 輪出端與輸入端電路上之只赴 於屮她& 點間並有由第_月哲铷柄电峪上之8點,輸出鸲與 路3 0 ,其工# 4第二反相器3 1 、3 2所組成之門閂 路其工作步驟包括:Voltage level: T ί Upper: The voltage between capacitor 1 2 and gate 2 2 is A 12, and the electric terminal 1 9 is connected to the voltage source vdd. One terminal is connected to the electric transistor transistor resistance 1 and the terminal is grounded. The metal oxide electrode The source of the remote 3 · air-recognition S 2 1 is connected to the voltage source vdd, and the circuit on the output and input side of the wheel only goes to 屮 her & At 8 o'clock, the output of the gate circuit 3 0, the gate circuit composed of the second inverters 3 1 and 3 2 of its work # 4 includes the following steps:
1231649 五、發明說明(4) (1 )電壓源V H ^ 電阻電容時„ ΐ始供應時,電阻1 1及電容1 2之 電壓慢产沾二常數(Rc時間常數)電路會將八點 相等之ί蔽〇伏特充到與電壓源vdd之電壓值 (2)當A點二 M〇S 2 ηί〇伙特時,金屬氧化半導體電晶體P 位會與電懕、、處於開啟(〇 Ν )狀態,使得Β點電 將Β點雷私二ν d d相同,並經由門閂電路3 〇而 衝器(B u f定在高(H 1 G H )準位,並經由緩 (3 )當A ·點充二|J = Γ ) 4 〇推動内部電路;以及 時,金屈^?壓源Vd d之電壓值相當之電壓值 閉(ϊ ΐ ”導體電晶體P M 0 s 2 0會因此關 導體電晶體Ρ Μ ^ ΐ ? V d d不再經由金屬氧化半 « ,备 M 0 S 2 0而傳送到b點; 狀維:ΐ Γ ?始供應電源時,當輸入埠是處於浮接 ,.^ ^ Ν點不接任何電路時,此電路可以經 2 ί:Ϊ Ϊ而提供所預設的初始狀態,不必再經 由其他::電路產生。而且當外部電路接上並開始 供給訊號=,外部電路所供給訊號可以很容易的經 由第一 t第二反相器3 1 、3 2所組成的門閂電路 3〇傳遞訊號到内部電路,並且在此時金屬氧化半 導雜電晶體P M 0 S 2 〇已經處於關閉(0 F F ) 耗 電絡 適合用在如省電模式 狀態,所以本發明電路不會產生習知電路所額外消 μ的功率,並且所需的額外電路也是相當的少,此 • Α 人田 ·Ζτ L 尤 _ (Power s a v 12316491231649 V. Description of the invention (4) (1) Voltage source VH ^ When the resistor and capacitor are supplied, the voltage of resistor 1 1 and capacitor 1 2 is slow to produce two constant (Rc time constant) circuit. The voltage of 0 volts is charged to the voltage value of the voltage source vdd. (2) When the point A is 2 MOS 2 η 〇 0 special, the P bit of the metal oxide semiconductor transistor will be in an on (0N) state with the battery. So that point B will be the same as point B, and will pass through the latch circuit 3 0 and the punch (B uf will be set at a high (H 1 GH) level), and will be delayed (3) when A · point is charged. | J = Γ) 4 〇 Promote the internal circuit; at the same time, the voltage of the voltage source Vd d is equal to the voltage value of the voltage source (屈 ΐ). The conductor transistor PM 0 s 2 0 will therefore turn off the conductor transistor PM. ^ ΐ? V dd is no longer transmitted to point b via the metal oxide half «, ready M 0 S 2 0; Dimensional dimension: ΐ Γ? When the input port is floating, when the input port is floating, ^ ^ Ν points do not When connected to any circuit, this circuit can provide a preset initial state via 2 ί: Ϊ Ϊ without having to go through other :: circuits. And when an external circuit is connected and Start to supply the signal =, the signal provided by the external circuit can easily pass the signal to the internal circuit through the latch circuit 30 composed of the first and second inverters 3 1 and 3 2, and the metal oxide semiconductor is at this time The transistor PM 0 S 2 〇 is already turned off (0 FF). The power consumption network is suitable for use in a state such as a power saving mode, so the circuit of the present invention does not generate the extra μ power consumed by the conventional circuit, and the additional circuit required is also Quite a few, this • Α 人 田 · Zτ L You _ (Power sav 1231649
五、發明說明(5) ng m〇de)的控制輸入埠,不必再接上任 4電路,即可提供所需之預設初始狀態,可有效加 快在生產量測上所需的時間與減少所需的額外量測 電路。 本發明之一實施例電路係為具有活動式拉下· 伏特/5伏特容忍輸入單元電路裝置(t 〇丨e『 …11 ^ C e 1 1 with active p u 11 一 d〇Wn),可使用於 ARf〇〇5 input cell、 B . ^ 执八皁 低(1 〇 d m m ),有在初始狀態能自動設定為 」 W )的機制,請參閱第3圖。P w r s t會接 到類似於第1圖電阻—嘗钱 。-開始將時間常數電路 1也在開啟(〇N)的狀態,所以造成Μ * Ϊ ΐ ί開(Ν )的狀態。因此,I Ν點的電位即 被拉到與接地(G Ν Γ> >1 n ^ IN點的電位即V. Description of the invention (5) The control input port of ng m0de) can provide the required preset initial state without connecting to any 4 circuits, which can effectively speed up the time and reduce the time required for production measurement. Additional measurement circuitry required. The circuit of one embodiment of the present invention is a circuit device with a movable pull-down · volt / 5 volt tolerant input unit circuit (t 〇 丨 e 『… 11 ^ C e 1 1 with active pu 11-d〇Wn), which can be used for ARf〇〇5 input cell, B. ^ It is a mechanism that can be set to "W" automatically in the initial state. Refer to Figure 3. P w r s t will be connected to a resistor similar to Figure 1-taste money. -The time constant circuit 1 is also turned on (ON), so the state of M * Ϊ ΐ is turned on (N). Therefore, the potential at point I Ν is pulled to ground (G Ν Γ > > the potential at point 1 n ^ is
1、2、4、r ‘ D )相同’並且經由換流器I N V 4、5和電位調整(level shift) 電路所組成的門閂電路 shift) 電位穩定在接地值於+( 1 a t c h )結構,將I N點的 定在低(1 〇w)狀^出知U 1 1及〇u t 2也會被固 INV1為舒密特 gger),可降攸τ 發^(Schmitt tri 位調整(1 ev e i N點因雜訊而產生的錯誤動作。電 生2伏特與.3伏特的带二h i f t )電路可以為此電路產 將Μ 4關閉,如需改嫩準位。之後R c時間常數電路會 ,直接將訊號輸入輪,,出端〇u t 1及〇11 t 2的狀態 ,J端(1 N )點即可。此具有活動式1, 2, 4, r 'D) are the same' and the latch circuit composed of inverters INV 4, 5 and a level shift circuit is shifted) The potential is stabilized at a ground value at + (1 atch) structure. The IN point is set to a low (1 0w) state. It is known that U 1 1 and 0 2 will also be fixed to INV1 as Schmitt gger), which can be reduced by τ (Schmitt tri-bit adjustment (1 ev ei N Click the wrong action caused by noise. The electric 2 volt and .3 volt circuit with two hift) can be used to turn off the M 4 for this circuit. If you need to change the tender level, the R c time constant circuit will be directly Input the signal into the wheel, the state of the outgoing terminals ut 1 and 〇11 t 2, the J terminal (1 N) point can be. This has a movable type
第10頁Page 10
V 1231649 五、發明說明(6) 拉下功能之3伏特/5伏姓 rant ί η +仇特各忍輸入單元電路( n 1 1 n p u t cpi〗 , 11 with a c t - down、 . B . ^ t ),也具有靜電放電 ο ran e e Puli 的保護電路。 因此本發明JL右以τ 令吳虿以下之優點: 、係ΪΖ ίΓ低漏!流之自動準位數位輸入電路* 且電各和電晶體所組成的電路,在^置 正確的初始狀態,而當外 率失更可輕易地改變電路狀態,而且節 2、^=具有極低漏電流之自動準位數位輸人電 係可直接應用現有電阻、電容及電晶體,取得 置 適用於各類電路與系統’產業上之經濟應用:值 極面。 值 综上所述,本發明實可達到預期之目的,提供一種 有極低漏電流之自動準位數位輸入電路裝置,可藉由藉^ 充放電電路、電晶體電路及門閂電路之作用,而當外部電 路改變狀態時,可使位於該輸出端與輸入端電路上設之b 點電麼狀態容易地跟隨改變,且不會產生額外的功率消耗 ’適用於各種電路與系統,極具產業利用之價值,爰依法 提出專利申請。V 1231649 V. Description of the invention (6) Pull down the function of 3 volts / 5 volts surname rant ί η + Chou Tege Ni Ni input unit circuit (n 1 1 nput cpi〗 11 with act-down,. B. ^ T) , Also has a protection circuit for electrostatic discharge ο ran ee Puli. Therefore, according to the present invention, JL has the following advantages to make Wu Yan the following: τΪ ίΓ Low leakage! The automatic quasi-digit input circuit of the current * and the circuit composed of the electric unit and the transistor are set to the correct initial state, and the circuit state can be easily changed when the external rate is lost, and the section 2 and ^ = have extremely low The automatic quasi-bit-of-three-phase power transmission system for leakage current can directly apply the existing resistors, capacitors, and transistors to obtain economical applications suitable for various types of circuits and systems in the industry: extreme value. In summary, the present invention can achieve the intended purpose, and provide an automatic quasi-digit input circuit device with extremely low leakage current. By using the functions of a charge and discharge circuit, a transistor circuit and a latch circuit, When the external circuit changes state, the state of point b located on the circuit of the output and input can be changed easily without additional power consumption. 'Applicable to various circuits and systems, very industrial use The value of the patent application according to law.
第11頁 1231649 〇 〇 圖。 0 0 2 2 1 圖圖路圖 24123 塊塊電路 方方之電 路路例之 電電施術 之之實技 路 器 明明明知 電路 相 發發發習 } 電電 反 本本本為示放閃阻極極二 ㈤係係係係表充門電源沒第 奶圖圖圖圖號 簡 1 2 3 4 圖 0 0 113 2 式第第第第ί 1 3 1 2 2 3 圖 電晶體電路 緩衝器 電容 閘極 第一反相器 %Page 11 1231649 〇 〇 Figure. 0 0 2 2 1 Diagram Road Diagram 24123 Block Circuit Circuit Example Circuit Electricity Technique Practical Circuit Device Obviously Knowing Circuit Phase Development Learn} Electron and Electron Reverse is a flash diode The power supply of the meter is not the first figure, the first figure, the first figure, the first figure, the first figure, the first figure, the second figure, the first figure, the second figure, the first figure, the second figure, or the first figure. Device%
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| TW93112166A TWI231649B (en) | 2004-04-30 | 2004-04-30 | Automatic level correction apparatus with lower current loss for digital input circuit |
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| TW93112166A TWI231649B (en) | 2004-04-30 | 2004-04-30 | Automatic level correction apparatus with lower current loss for digital input circuit |
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| TWI231649B true TWI231649B (en) | 2005-04-21 |
| TW200536269A TW200536269A (en) | 2005-11-01 |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102156503A (en) * | 2010-02-12 | 2011-08-17 | 台湾积体电路制造股份有限公司 | Circuit for automatic level control and method thereof |
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2004
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102156503A (en) * | 2010-02-12 | 2011-08-17 | 台湾积体电路制造股份有限公司 | Circuit for automatic level control and method thereof |
| CN102156503B (en) * | 2010-02-12 | 2013-12-25 | 台湾积体电路制造股份有限公司 | Circuit and method for automatic level control |
Also Published As
| Publication number | Publication date |
|---|---|
| TW200536269A (en) | 2005-11-01 |
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| MM4A | Annulment or lapse of patent due to non-payment of fees |