TWI283024B - Method for operating a system for chemical oxide removal - Google Patents

Abstract

A processing system and method for chemical oxide removal (COR) is presented, wherein the processing system comprises a first treatment chamber and a second treatment chamber, wherein the first and second treatment chambers are coupled to one another. The first treatment chamber comprises a chemical treatment chamber that provides a temperature controlled chamber, and an independently temperature controlled substrate holder for supporting a substrate for chemical treatment. The substrate is exposed to a gaseous chemistry, such as HF/NH3, under controlled conditions including surface temperature and gas pressure. The second treatment chamber comprises a heat treatment chamber that provides a temperature controlled chamber, thermally insulated from the chemical treatment chamber. The heat treatment chamber provides a substrate holder for controlling the temperature of the substrate to thermally process the chemically treated surfaces on the substrate.

Description

</ RTI> </ RTI> <RTIgt; </ RTI> <RTIgt; </ RTI> <RTIgt; </ RTI> <RTIgt; </ RTI> <RTIgt; </ RTI> <RTIgt; And Method For Treating a Substrate), attorney Case No. 071469/0301073, filed on March 17, 2003; U.S. Patent Application Serial No. 60/454,642, entitled, Chemical Processing Substrate Processing System and Method For Chemically Treating a (Substrate), agent case number 071469/0301087, application date is March 17, 2003, the same as the US patent application serial number in the patent trial 6〇/454,64ι, entitled Processing System and Meth()d ForThermallyTreating a Substrate), Agent Case No. 071469/0301088, Application March 17, 2003; US Patent Application Serial No. 6〇/454,644, entitled "Methods and Designs for Insulation of Adjacent Temperature Control Chambers" (Method and Apparatus For Thermally Insulating Adjacent Temperature Controlled Chambers) '', Attorney Docket No. 071469/0292055, filed March 17, 2003. All of the contents of all of these claims are included in the reference. 1. Field of the Invention The present invention relates to a system and method for processing a substrate, and more particularly to a system and method for chemical and heat treatment of a substrate. 2. [Prior Art] ^ During semiconductor processing, a (dry) plasma etching process can be used to follow the thin lines or within the vias (Contacts) or contacts that are patterned on a substrate. The plasma etching process generally involves disposing a semiconductor substrate having an overlying patterned protective layer (such as a photoresist layer) in a processing chamber. Once the substrate is placed in the chamber, A separate gas mixture that can be separated from 1283024 can be introduced at a pre-specified flow rate (IV), while the vacuum pump is throttled to achieve "environmental process pressure. Weaving, when the gas is turned over - the percentage is An electron that is inductively or capacitively heated by the transmission of radio frequency (RF) power or an electron that is heated by the transmission of microwave power such as electron cyclotron resonance (ECR) can be formed into a plasma. Further, heating The electrons are used to decompose certain types of various environmental gas species and establish the types of reactants suitable for revealing the chemistry of the surface. First, the formation of electropolymerization The process is adjusted to achieve the appropriate conditions for the desired concentration of reactants and ion groups to etch various features (eg, trenches, channels, contacts, gates) in selected regions of the substrate. Etc.) The substrate material of the desired side comprises cerium oxide (SiO 2 ), a low-k dielectric material, a polycrystalline stone and a nitrite eve. During the processing of the material, etching such features generally comprises forming a light The pattern in the cover layer is transferred to the underlying film formed with various features. The mask may comprise, for example, a (negative or positive) photoresist, a photosensitive material comprising a layer such as photoresist and anti-reverse (ARC). Multiple layers, or a hard mask formed by sending one of the first layer (for example, photoresist) to the lower hard mask layer. 3. SUMMARY OF THE INVENTION The present invention relates to a system for a Weili substrate And methods, and systems and methods for learning and heat treating substrates. In the present invention, a processing system is described on a substrate including a first processing system and a second processing system. Material shift The second processing system is connected to each other. The first processing system includes a _ ing processing system, the medicinal processing system includes a chemical processing chamber, a base, and a vacuum pumping system connected to the chemical processing chamber. And a gas distribution system for introducing the gas into the chemical processing chamber. The second processing system j heat treatment system's cap processing system includes a temperature-controlled heat treatment chamber, a substrate for the processing chamber, and a substrate branch portion. And a gas system connected to one of the heat treatment chambers. The selected components of any of the chambers may be temperature controlled. 1283024 Operation method for a processing system containing a substrate. This method package, one or more chemical processing of the system Parameters: 二ΐ Contains a chemical treatment process pressure, - chemical treatment capacity at room temperature ίϊί f support, and - at least the chemical treatment gas flow rate -, 'use one or more chemical processing parameters to enhance chemical treatment At least two items of one or more thermal processing parameters of the system: present; 敎if number Ϊ containing - heat treatment pressure, heat treatment chamber temperature 孰 ii plate Nasaki + Chi gas ΐ 速 speed system ^ and system - one or more tilting 参 丝 silk processing heat treatment system processing secret; implementation of the setting i monitoring week heat treatment four, [implementation] layer (including the inclusion of one of the sensitization materials thin The engraving period 'this pattern is transferred to the lower layer ί. Photosensitive ίί, Figure 1 shows an exemplary embodiment of a processing system in accordance with an embodiment of the present invention 1283024. In the illustrated embodiment, the processing system includes: a manufacturing device = (MES) ll 〇 - tool layer (TL) controller 12 〇 'which is connected to 11 〇: &amp; And a batch of 1111·70·11111^11211) controller 190, tt JMES 11〇, TL controller 120 and processing tool 130. In addition, at least one of the MES 110, the ju2, the processing tool 13 and the magic controller 19 may include a cow and/or a library component (not shown). In other embodiments, GUI elements and/or library elements are not desired. After crying, some of the settings and/or configuration information can be obtained by the TL control 11 120 and/or the magic scale control two (four) s i system 110. Factory layer business rules can be used to establish a IE control, for example, TL control 11120 and/or hop controller 190

Si=1 is ί, and system i1Q is controlled to some extent. Also, you can use the work or: two, five, when to suspend and / or suspend a process, and what to do when the pause and / process. In addition, the business rules of the silk layer can be used to determine how to change a process and how to change the process. The measurement of the crude Wit action can include: initial model loading, pre-etching volume, ancient 瞀2 3 wide formula selection, post-silver measurement data filtering, feedback _) inversion, and R2R model update. ) Floor. The user interface (GUI) screen can be negotiated with the higher layer when the control strategy layer, the control plan layer or the control model is closed. Used to define and maintain the use of the gamma thief (4) 级 定 维持 维持 维持 维持 维持 维持 维持 维持 维持 维持 维持 维持 维持 维持 维持 维持Provide job management and help screens on how to define and refer to commercial planning. Ι ϋϋΐ ϋϋΐ Ϊ 从 与 与 孔 孔 孔 孔 孔 孔 孔 孔 孔 孔 孔 孔 孔 孔 孔 孔 TL TL TL TL TL TL TL TL TL TL TL TL TL TL TL TL For example, the jade-and/or 11211 controller 190 can collect data independently, or 1283024 type, operating time configuration information to the D controller 120 and / I can be = f. In the case of a cow, the settings, goals, limits, rules and calculations of the controller 120 and/or the job controller 190 are used as, ^, financial APC code, "dirty operation time," or 5 state information can be used by TL Control 11120 and / or leg control them &quot; r button is determined by this system, _ matching oblique. Can make H system business rules (system rules) to establish - control level. For example, TL control cry (10) = test The controller 190 can operate independently, or the TL controller 12G can be controlled to some extent. Further, system rules can be used to decide when to suspend or/suspend-process&apos; and when to suspend and/or suspend a process What? The eve of the system can be used to make the ribs decide when to change - the process and how to change the game, tl control 11 i2G can use the tool layer rules to control certain tools ^ to change Allowing the Wei and//Red Operating Base (4), the dynamic state of the system, in Figure 1, shows an R2R controller 190, a processing tool 13A, and a TL controller 120, but this is not required for the present invention. In addition to independent process tools and modules, semiconductor processing The system can include many processing subsystems, and the processing subsystem has many R2R controllers associated with them. In addition to many independent process tools and modules, the tl controller can be used to configure many processing tools. There are a number of processing steps associated with them. The TL controller 120 can collect, provide, process, store, and display data from processes including processing tools, processing subsystems, process modules, and sensors. Some applications may be included, including at least one tool-related application, a group-related application, at least one sensor-related application, at least one 1283024 interface-related application, at least one database-related application, and less A GUI related application, and with at least one configuration application. For example, the TL controller 120 and the R2R controller 19 can support processing from T〇kv〇APC, tools and/or a Trias tool and their associated processing. Secondary system and process module. Or, TL controller 120 can support other process tools and other process modules. _ GUI components can provide simple use Surface, which allows the user to make the following actions, view tool status and process module status; create and edit summary xy charts and wafer raw (tracking) parameter data; view guards alarm record; configuration $资料 Data collection for writing data to the database or outputting the status of the standard: Input to statistical process control (SPC) production, model testing and trial calculation of wafer processing information, and review current Information that is being stored to the capital, library; SPC chart for establishing and editing process parameters, μ fixed child = ϊΐίSPC alarm 11; performing record field analysis (PCA) and / or part ===== job pain screen Qin Xiu Edit and report on Guan Honghong ίί with if ΐ data and 5 trace data can be stored into the database 122 A ϋ 旦 正 positive 5 test _ data and main measurement data can be stored in the database configuration data Collecting the program and executing the process and operation plus the embodiment shown in Figure 1 shows that a single work = 2 ^ ^ = ^ ^ _ supports a plurality of customer line configuration procedures, · view includes tools , m : two; two redundant materials input to the coffee ===== jump control please include A link 192 coupled to at least one other R2R controller that performs a process of = 1283024 - process = off, and at least one other R2R controller associated with one of the processes executed after the process Chain 194. The link 192 and the link 194 can be used to feed back and/or feedback information. The R2R controller 190 is coupled to the MES 110 and can be part of an electronic diagnostic system. The R2R controller 19 can exchange information with a factory system. In addition, the mes 110 may pass commands and/or do not accept information to the R2R controller 19. For example, the MES 110 can feed the downloadable recipes for a number of process modules, three tools, and measurement devices to the R2R controller with variable parameters for each recipe. Variable parameters can include final critical dimension (CD) targets, limits, compensation, and variables in the tool layer system that must be adjustable according to the batch. In addition, the factory lithography CD volume can be fed forward to the R2R controller 19〇. Further, the MES 110 can be used to provide measurement information such as CD scanning electron microscope f EM) information to the R2R controller. Alternatively, you can manually provide cd §εμ, message. The adjustment factor is used to adjust for any compensation between IM and CD SEM measurements. Manual and automated input of CD SEM data contains a time stamp such as one of the dates for proper insertion into the R2R controller. The history of the feedback loop (FB) control loop can be configured by using the generic device model / The SEMI Device Communication Standard (GEM SECS) protocol is configured as a set of variable # parameters sent from the factory system. For example, the variable parameter can be viewed as part of an "Apc recipe." - The APC recipe can contain more than one sub-recipe and each sub-recipe can contain a plurality of variable parameters. The R2R controller 190 is connected to the processing tool. 13 〇 and TL controller 12 〇 may include feedback and feed forward data. For example, when an internal reset event positive tool is generated, R2R control 1 190 may transmit a message (eg, an alarm signal) to MEs 110 This will allow the noon factory system to make the necessary changes to minimize the number of critical off-states after a lifetime, such as some = positive or prevent changes during maintenance. n 12 1283024 f In the embodiment shown, the processing tool 13() is shown, which includes a first integral measurement module (IMM) 132, a processing subsystem, a system 15 and a second job 134, but It is not required by the present invention. Alternatively, other configuration configurations may be used. The single-R2R control H 19〇 is also shown in the figure, but this is not the present invention, or an additional coffee is used. Controller. For example, skip control = 190 can include January feed (4) At least one of a controller, a process model controller, a feedback (fb) control, and a controller (all not shown in the figure). In the illustrated embodiment, the first event is 1〇2 One

==32 ° For example, the 'i start event can be the message from the host that contains the information. The first - 132 series is connected to the -R2R control ί! 1 ^ an f7 work system 150. The processing subsystem 150 is coupled to the control 1 〇 /, - second IMM 134. The second IMM 134 is coupled to the jump controller processing subsystem, and the system 150 can include a first buffer module 152, a chemical oxidation unit f, a (COR) module 154, a post heat treatment (pHT) chamber 156, and A second buffer, she 158. The C〇R module performs the first step of the c〇R process. The first step is OK. = Example = a reaction between a mixture of one of the treatment gases of HF and ammonia and the day of the dioxide, forming a solid reaction product on the surface of the wafer. Located next to the c〇R module

Ϊ / η ^ shouted the third step of the CQR process. This step causes evaporation of the solid reaction product by heating the wafer. The U m force 1 worker system 丨 5 〇 can include a process delivery service, which can include: t :; PHT module and a buffer squat module. The processing system can be controlled by the respective processing of the R core group, the ΡΚΓ module, and the buffer (LL) module. And + 5, a buffer module can include a transport system for the COR finger, the Ding group, the buffer (LL) module and another module (for example, another transport iifTf transfer - Crystal®. The recording group can be included in (10) as the 额 group type for the TL controller. The processing subsystem can use a C〇R formula to start the processing, and a C〇R^ 13 1283024 can be used. When a substrate is transferred to the COR module, for example, the substrate can be received by lifting pins stored in a substrate support portion, and the substrate can be: to the substrate support portion. Then, the substrate can be It is fixed to the substrate support by using a clamping system such as an electrostatic clamping system, and a heat transfer gas can be supplied to the back side of the substrate. ', Next, the COR recipe can be used to set one or more The chemical processing parameters are used for the chemical treatment of the soil plate, and these parameters may include a chemical processing pressure, second, the temperature of the treated wall, the temperature of the chemical substrate support, the chemical treatment base, the temperature, and the chemical processing gas distribution. System temperature A chemical treatment process of the two gas fluid ^) of at least - item. Then, the substrate can be chemically treated, and, for a second period of time. For example, the first period of time can range from 3 〇 to 36 〇 seconds. The substrate can then be transferred from the chemical processing chamber to the pHT module. At this time, the substrate holder is removed and the back side of the flow-down substrate can be terminated. The plate can be vertically raised to the transfer plane by being supported from the substrate by using a lift pin assembly stored in the substrate support. The system can receive the substrate from the liter, and is disposed in the PHT module. The substrate lifter assembly can receive the substrate from the transport system and can lower the substrate to the substrate support. The PHT formulation can then be used to set one or more thermal enhancement parameters for the PHT module to perform heat on the substrate, and the substrate can be heat treated for a first time. For example, one or more thermal additions may include - heat treatment wall heat treatment upper component temperature, "heat treatment substrate temperature, a heat treatment 25 5", a heat treatment substrate temperature, a heat treatment processing pressure, and A heat treatment of at least the term of the chemical (including the process gas and the fluid). For example, the first period of time can range from 3 360 to 360 seconds. In an example process, the processing subsystem 15 can be a chemical oxide removal (〇=糸, used to trim the oxide hard mask. In another exemplary process, : 1^5 factory C0R The gas path is used to trim the oxidized anti-rice anti-reflective coating persimmon film. The processing subsystem 150 includes a COR module 154 for the exposed surface layer of the oxide surface layer on the chemical-soil plate. On the surface of the 14 1283024 &amp; 3 system of adsorption shadow · surface layer - chemical (four). In addition, the processing subsystem is released - ΡΗΤ right group 156 used to heat the substrate 'to increase the substrate temperature to explain = (or Luo plating) the chemically altered exposed surface layer on the substrate. And the module can use the processing gas containing TM and Li 3, and the range of the force can be from about i to about 尬 (10), for example It can be from about ^ 25 mTorr. The flow rate of the treatment gas of each kind can range from about to about 200 sccm and, for example, from about 1 to about 1 〇〇 sccm. In addition, you can go to Wr. In addition, the C〇R module chamber can be heated to the range f Γ At a temperature of C, for example, the temperature may be about 4 叱.

The rolling body distribution system can be heated to a range from about 4 (rc to about 1 Torr. One of the temperatures can be about thieves. The temperature can be maintained in the range of from about 1 Torr to about 50 ° C. A temperature, for example, the substrate temperature may be about 2 〇〇 C. Further, in the PHT module, the heat treatment chamber may be heated to a temperature ranging from about 5 〇C to about 10 ° C, for example, temperature It may be about 8 Torr. In addition, the upper component may be heated to a temperature ranging from about 5 ° C to about 1 ° C, for example, the temperature may be about 80 ° C. The substrate may be heated to More than about one 〇〇. One of the temperatures. Alternatively, the substrate can be heated from about 10 (rc to about 2 〇〇〇C2), for example, the temperature can be about 135 °C.

The COR and PHT processes described herein can produce the following amount of remarks: · Chemical treatment of cerium oxide exceeds about 1 〇 nm every 60 seconds to expose vaporization # an etching amount; chemical treatment of thermal oxides Exceeding approximately 25 per 18 sec = an etched amount of one of the exposed oxide surface layers; and an amount of etching of the exposed oxide surface layer per 18 〇 $ over about 10 nm for TEOS. These treatments can also produce an etch change across one of the substrates of less than about 2.5%. The start event 102 can be one of the wafers in the event, and the start event can include data associated with the in-coming wafer. This information can include batch data, batch data, operational data (rundata), composition data, and wafer history data. Or the start event can be a different process-related event. — The first IMM 132 can provide 15 1283024 before processing to establish a wheeled state of one wafer. The first MM can provide (feedforward) one of the pre-process measurement data. And one of the pre-processing materials can be provided. The second part is the 15th. Or the two parts can contain the same information. The -IMM 132 or the multi-unit. The -IMM 132 can be included with the module I, the test The device, the measuring device associated with the tool, and the external measuring device. For example, the data can be obtained from a sensor connected to one or more of the doping groups and a sensor connected to the processing tool. Data can be obtained from external devices such as the -SEM tool and the Optical Digital Profile Detection (ODP) tool.

It can be obtained from Timbre Technology, Inc. (TEL), which provides the patented technology of the Sweeping Machine. The 11211 controller can use a difference between one of the input materials (input state) and a target critical dimension (desired state) to predict, select, or count a set of process parameters to achieve the crystal The state of the circle changes from the input state to the desired result of the desired sorrow. For example, the process parameters of the predicted set may be a first estimate based on one of the formulas used in an input state and a desired state. In one embodiment, information such as input status and/or desired status data may be obtained from a host.

In one situation, the R2R controller 190 is aware of the input state and desired replies of the wafer, and the R2R controller 190 determines a set of recipes that can be executed on the wafer to change the wafer from the input state to the desired state. For example, this set of recipes can illustrate a multi-step process that includes a set of process modules. R2IU air compressor 190 can use tabular technology, and one of the rules for determining when to convert technology can be an input range, an output range, a wafer type, a process type, a module type, a tool type, a crystal At least one of a circular state and a process state is based on. For example, the recipe can be in a table and the R2R controller 190 completes a table query to determine which recipe to use. When the R2R controller uses tabular technology, the feedforward control variables can be configurable. For example, a variable can be one of the constants or coefficients in the table. In addition, there may be multiple tables, and one of the rules for deciding when to convert a table may be based on an input range or an output range. 16 1283024 The time constant of the ruler control state is based on the measurement. When the measurement data is available immediately after the completion-to-batch, the R2R controller time is often processed during the machining process. Equivalent measurement data can be obtained after - or after the completion of this batch, the process can be straightforward and simple steps ^: between crystal ii, and / or batch - his prison controller can be Operate at any time. For example, the ancient, is in the -, the second coffee controller can ϊί - cry · ^ 1 啷 controller can be in a simulation mode π 目 female τ 跋 L can contain - early - loop or multiple loop And these loop time constants. For example, the loop can be used as a single input single output (sls) device according to wafer timing, batch timing, batch timing, chamber timing, tool timing, and/or factory-time J-sequence R2R controller. = In: Re-output (SIMQ) device, - Multiple input single-output (Mls) device and overnight input multiple output (ΜΙΜΟ) device. In addition, the inputs and outputs can be within the microcontroller and/or between one or more microcontrollers. For example, when multiple inputs such as CD and sidewall angle are used, the input and output can be fed forward and backward at the mouth of the two modules (ie, one for CD control and one for wall angle control). use). In addition, a photomask can be used to turn on the controller. In the case of multiple processes with multiple modules, the information can be fed from one magic controller or backwards to another R2R controller. The Bay+Processing subsystem 150 can include at least one of: an etch module, a squash module, a polishing module, a coating module, a developing module, and a 埶 = group. ..., Wang Min When a processing tool and / or process module transfers data to the database, this material can be accessed by the R2R controller. For example, this information can include Gong Pong Cha 2 17 1283024 j materials: maintenance materials and EPD data. Tracking, feed can be provided. The R2R controller 190 can be based on input status, process characteristics, and a process mode = wafer-predicted state. For example, the trimming rate is added: ΐί: pre-, integer. Alternatively, - _ 2 = processing time - is used to calculate - depth, and - deposition rate model I is used along with a processing time to calculate a deposition thickness. In addition, the model can include j, table, PLS model, PCA model, and appropriate distance relationship (FDC and multivariate analysis (MVA) models.

The R2R controller can receive and utilize data provided externally about the limits of a process module. For example, the K2R controller GUI component provides a means of manual input. In addition, a factory floor (four) device provides the limits of the process parameters for each process module. The R2R controller receives and executes models constructed from commercially available model test software. For example, the R2R control can receive a model (PLS, PCA, etc.) that Wei Xing should construct externally and send to the controller.

The second IMM 134 can provide post-process measurement data that can be used to establish a crystal, one of the output states. The IMM134 can provide (reward) the first part of the post-process measurement data to the R2R controller 190 and provide the second part of the post-process measurement data to the library and wafer out event 1〇4. Or, two parts can contain the same information. The second IMM 134 can include a single IMM or multi-weight measuring device. The second IMM 134 may include a measurement device associated with the process module, a measurement device associated with the tool, and an external measurement device. For example, data can be obtained from sensors connected to one or more process modules and sensors connected to the processing tool. In addition, the data can be obtained, for example, from an SEM tool, a light emission spectroscopy (〇ES) tool, and an external device of an ODP tool. The R2R controller 190 can use the post-process measurement data from the IMM 134 to calculate a first set of process deviations. The process variation of such a calculation set can be based on the wafer-turned 疋 determined by the addition of 18 1283024. In the case, the R2R controller 19〇 knows the = (four) decision state, and the R2R controller 19G determines the difference between the desired state state and the output, in this way, the measured solid. Then I decided to compare the process heart == for comparison, and the difference between the state and the output. In this way, the process results of the predictive prediction are compared for comparison, so as to determine the process result and the method of adjusting the ιυ, the target CD provided by the factory is one (one) 1 single. The increment of the variable (she a) can be applied as a ^ pun with: 5 ϋ? Another form of feedback can be performed by performing supervision; empty wafer, = new:;, monitoring chip deletion ^^ can (9) 卩 1 == change these settings to check the operation of the Wei domain, our yuan f Space, or several simultaneous implementations of different recipes. Itri ΐί update can generate hunting shogun factory control management monitoring wafers and model updates in the controller of the tool or factory. The controller 19 calculates an updated recipe for the next wafer. In one condition, L 190 can use feedforward information, model test information, and feedback to determine whether to change the current recipe before executing the target wafer. In another case: &gt; R2R control state 19〇 can use feedforward information, model test information, and feedback information to determine the current recipe before the shirt is executed. Or t-supplied, device 19 () can use feed-forward information, model test information, and anti-cold information to change the current formula before the implementation - talk. An R2R controller 190 can include one or more transitions (not shown) to filter the J material to remove random noise. For example, a filter can be applied to the input or output of a controller. In one situation, the filter can be applied to the input used for filtering without the need to care about the control (ie, 'independent use of a look-up table). 19 1283024 Fine 1τΐ can make the controller in-control range The change in the round-off variable, for example, the rate of the exchange, the rate of exchange, and then the change of the pressure and the change of the flow rate are stepped out. Alternatively, an outlier filter (outlier fl (4) can be used to remove outliers that are not statically considered and should not be considered in terms of two-mean calculations. You can use the method of ===) to save money. The sewing method is effective ^, 疋1 is maintained without absolute limit 'allowed--the group limit is fined to a change group=rain into the CD average data (this condition can be changed without affecting the filtering, || limit) 'Tif is imaginary. About the outliers, the extra rules need to be represented by the secrets, and the minimum number of uses: ϊ^ filter to remove random noise and stabilize the control loop 'Can be ^ 7 榷 number plus 榷 crane average (abdominal _ or Kalman filter. When using a = number must be set i (fEWMA condition, λ system is 'two two two Γ 'EWMA calculation can be used each time Use the complete history and π, in order to capture the data points that are added by the processing date and time. The R2R control H can receive and feed forward the data. The outline, the leg control test y receives the input about the desired processing. Material and desired process results (Target &amp; s: ' and R2R control n available - Group recipe parameters: Z controller can receive and use feedback data. For example, the controller can receive feedback that is delayed. The data made the body of Asian and African Yipu in the order of I added by the jade; = Receiving = Adding the workable material and jumping the control to the component to provide control R2R control (4) Notification of the transmission and reception exception status. Lifting the words, leg 20 1283024, the production mode can be transmitted and received back and forth, a factory floor control Cry a work can be done = 'Caf control r is recorded in the coffee controller record with two ^ - gas flow rate, and adjust the combination of gas mt - and build ancient, to enter the material situation to select the process model. For example =, with the system can be calculated - the correct set of hands ί i i i i β β i i i i i i i i i i i i i i i i i i 确认 确认 确认 确认 确认 确认 确认 确认 确认 确认 确认 确认 确认 确认 确认 确认 确认 确认 确认 确认Preset default hand slave. For example, when the R2R_ device can not provide the "Rated," recipe parameter of the financial towel. Recognize the date η U's recipe parameter date $ '. Contains 1 library component to make Input and output data return to field 1 5 2 controller can archive the received input, the output sent, 3 in the = search database by the action taken by the controller. In addition, the magic R, can be packaged 1 material backup and recovery Means. Also, you can search the database. 'And 跋 control 11 can make (4) library component history and current model information and model configuration information. Μ Ϊ ^ thieves can include a web-based user interface. For example, R2R control = state υ 3 prompted GUI The component is activated - the information is affixed to the asset. R2 = the controller can contain - the security component, which can be provided according to the security administrator rhino: ^. The heavy access level. The service _ can contain - group In the installation, the preset surface 'set' can enable the control to reset the fine condition. Depending on the nature of the exception, 跋 control!! Various actions can be taken to respond to the exception of 21 1283024. For example, the exception Conditions may include missing missing data, missing target CDs, measurement errors, exceeding recipe parameter limits, exceeding process module limits, and/or out-of-order receive feedback events. For example, the action taken according to the exception may be based on borrowing (four), thief side, maker, mode, touch identification number, number of load ports, number of boat boxes, batch number, control work id The business rules established by the detailed description of the process work ID and/or the number of slots. Configure this situation from the highest level to the lowest level at a level. Matching a higher level layer can be overturned to match a lower layer. If no match is found, the preset action can be taken. '

The R2R controller inputs can include instructions, substrate status, module physical status, process status, and/or controller parameters. In addition, the R2R controller inputs can include the feed constant, the time constant of the feedback loop, the cumulative reset event, the IMM step, and the 0DP offset. Instructions can include targets, tolerances, calculation commands, data collection schedules, algorithms, models, coefficients, and/or recipes. The substrate state can include information from the substrate being processed (on-site, wafer, batch, batch status), profile, and/or physical or electrical measurements. The physical state of the module may include an hour, a number of wafers, and/or a consumable state of the current or last known recording state of the module and component to be used. The process status may include current or last known measurement status of the sensor from the processing environment, including tracking data and/or summary statistics. The controller parameters may include the final settings of the recipe/controller setpoint and the process parameters for constructing the substrate state, the module physical state, and/or the process state. The R2R controller output can include the following items: export parameters, set 'an event or message, intervention, derived (derivedc〇ntext), record (message, and domain history. For example, the data can be transmitted The offline system may be used to derive the parameters derived from the controller, the process, the material, and/or the device. The settings may include the tool parameters calculated by the suspect, and generally operate. The time is downloaded to the tool. For example, "These parameters can include the time of the step, pressure, temperature, gas flow, and/or power. The y or message can include an indication that an exception has occurred in the system being controlled. Information. Insert 22 1283024 into the can, 3 on the basis of analysis, the results by (4); the air conditioner recommended (or taken) of the poor ifL. The surname can include the (4) control (four) derived track record information can be the description Control the activity of the — - text message. The history item ^ is transmitted to the offline system for the decision support line (Dssm analysis R2R control II can include at least - controller application to the body. R2RS system The at least one storage device that can store the data may be at least - the computer executable body, for example, from the East Weizi, in the case of at least one of the following: the group ίί ί - gui interface connection second secret: ^ mrr μ 褒 type (such as the tool, board group 'sensor, etc.). 枓 &amp; GUI GUI screen can be used to determine the number and type of #f material, and In order to determine how and how to store the information (four). In addition, the fault management cafe screen can be used to inform a user about the fault condition. Example of the text (four) - the shape of the red - operation method - rainbow = 10Β中'Get the pre-processing measurement data. The measurement data can include the field measurement circle data. For example, the on-site quantity can include: fit and fineness, CD, material thickness, material cross-sectional area, trench Cross-section, soil width, differential width, field results, and/or number of sites. Wafer. CDf: Flags, number of measurement sites, recipe results, coordinates X, and ^ In addition, processing 剞 measurement data Included at least one insulating feature of the fc/f material and at least the sleeve feature Set of CD material, and a process recipe is determined by the "i parent insulation CD data and nested CD data and the target CD. For example, the tg two trimming process can be based on the fp^/ between the insulated CD data and the target CD data. The second trimming process is based on the nested CD data and the target CD resource=row. The first variable increment can be determined based on the difference between the first feature part and the first-order private CD lean material; The two variable increments 23 1283024 are determined based on the difference between the CD data of the second feature and the target CD data; and a trimming process can be performed based on the difference between the first variable increment and the second variable increment ... The pre-process measurement data can be used for feedforward control. Also, on-site measurement data can be summarized as statistical values for controlling wafers based on certain business rules. , , , and ^ pre-work measurement data can be filtered. For example, an outlier suppression filter can be used to remove data points on a wafer that are outliers and that are statically incorrect. change. The scenes of those that are not available can be discarded and not used for wafer average calculations.

In the case of -, the average / σ comparison method can be used in the pre-processing amount. For example, the -^ multiplier can be specified χ; all data points can be calculated by _ t averaging two 镰 (average The values +^σ and ^ σ), all data points outside the pole 16 can be stripped off by the last. Alternatively, the outliers can be changed by using (4) ^ Μ 5 'supplied one or more CDs that can be used to determine the substrate of the substrate. Γη

The position of the system CD is determined by the desire to control the "process". Therefore, each CD is available, and with each control item, the factory target CD is MES clear CD; the target CD is by using the CD from one, and the CD is 2. In the 'can determine the expected process results: when the r measurement data is small" = time - rushing the wrong field processing! The measured data is approximately equal to the target (five) to win 24 1283024 one, zero or null (Null) situation. When the pre-processing measurement data is greater than the target cd, a trim amount can be established. If the process molding including the relationship between the trim amount and the recipe parameters has been confirmed, the trimming amount to be removed during a process can be regarded as Expected results. In 225, the formula to be used may be determined. For example, one or more process models may be provided. A process model represents desired results (outputs) and received variables that must meet those results. The relationship between the process model and the process model may include a table format &amp; type, the table format model may include a table based on the experimental data of certain evaluations including the segmentation of the desired result and the distribution, the variance of the variance. Linear or non-conform. As shown in Figure 3, the present invention can be used to control the amount of trim etch of a specified control CD and achieve a target CD within tolerances. For example, based on trimming allowance/quantity, control Asian (TL and R2R) A simple soap box algorithm (control recipe selection method) can be used. First, a control formula containing information on the amount to be trimmed must be evaluated and pre-qualified. Table 1 shows an example of the evaluation results. A nominal formulation is a basic reference process recipe with a trim etch (TA). This example shows four control recipes with various trimming etches (TA1, TA2, TA3, TA4) (control &amp; recipe i, 2, 3, 4), but this is not required for the present invention. Different numbers of formulations and multi-dimensional formulations (i.e., target CD and target depth) can be used. Table 1 Example Control Formula Check Table Control Formula Dressing Rating Formulation (NR) Dressing (TA) * Control Recipe 1 (CR1) Trimming 1 (TA1) Control Recipe 2 (CR2) Trimming 2 (TA2) Control Recipe 3 (CR3) Trimming 3 (TA3) ~ Control Recipe 4 (CR4) Trimming Volume 4 (TA4) Based on the Formula Checklist (Table 1) example, the concept chart for recipe selection is shown in Figure 4. Although only one side is shown in the chart, each box represents a double dimension (twice the size) &quot;. In addition, the box boundary (BB1-BB5) is also displayed. , 25 1 283024 ... Under the condition, the user can set the control &amp; for each control formula, each control formula and each trim amount; and input the trim amount; 3 soft death can be borrowed by Xianjian _ The first qualified control party "converts the upper limit - for example, when it exceeds an upper boundary, it can declare a condition or can perform a 4-step process. The lower boundary can be established by the second one. The lower limit of the amount of dressing that is achieved by controlling the recipe. After the user confirms the set of energy, the TL controller (lngeni〇) divides the space between the upper and lower boundaries by the trim amount input (TAs). The lower and upper boundaries of each tank are determined by the median of the two trimmings and the control formula and trimming amount are each

Assigned to - box. Or, you can download and control the number of mosquitoes from the MES. Mu Each box has its own trim boundary. Once the desired CD is determined, the TL controller (Ingenio) determines the box in which the desired amount of trimming is placed. For example ^

The CD can be a CD, a CD, and/or a CD. This means that the closest trimming amount in the control recipe is selected. The simple box algorithm of this example is shown in Figure 5. In this example, Control Formula 3 was selected and the substrate was to be trimmed by using ta3. Some difference between the desired amount of trimming of the control recipe and the selected trim amount (i.e., the trim amount error) must be within the target CD tolerance. One control failure can occur 'and the TL controller (Ingenio) or the tool (Telius) can fail to control. The failure of the measurement data and the failure of the recipe selection are the types of control failures that can be detected by the TL controller (Ingenio). The type of control that can be detected by the tool is the recipe reception pause, the integration communication failure, and the synchronization failure. When a control failure occurs (recipe reception pause or integrated communication failure), one of the following options can be used to control the TL controller (Ingenio) · Use tool recipes/recipes; circumvent without processing; and stop the R2R control program . When a control failure occurs, one of the following options can be used to control the tool (Telius) action: batch: ^ continue and batch interrupt. &quot; Control Plan can be considered as a run-to-run control unit. In this unit, the configuration settings include integrated control with a process tool, control process, control failure action, and / 26 1283024. The independent control unit includes a control room and associated m ΪΖ 'processed by using the recipe determined in step 225 - the trimming process can be performed by using a SOC module, a = 杈 ▲, and at least one buffer modulo One of the groups added the sub-system to watch the butterfly and Yuancheng. τ ϋ ί can move a wafer into a first buffer, (load lock chamber (L〇ad)) chess, and. The first buffer (loading lock chamber) module draws light to reach true 1 to move the wafer to a second buffer 11 (PHT) module; in the GUI status screen. Next, the tool can move the wafer into a first system: ( ) $:, and, the TL control person (FDC component) can select a data collection (DC) strategy in a control strategy, and set the sensor The status screen can be updated; the group status can be changed; the tool executes the first-process module, the recipe starts, and the status screen can be updated (the module status can be changed to "wafer processing"). Then, the sensor can start recording, and the recipe loops through the processing step; the first process module can transmit a “recipe end event”, the sensory benefit can be stopped, and the tool moves the wafer to a second buffer to cry ( Pht) Qiao group. Next, the TL controller (FDC component) can collect the data file from the tool, and start processing the data based on the lean material collection filter; the TL controller (FDC component) can select one of the analysis strategies defined in the control strategy. Processing module and processing status data; and updating the database (ie, module status and process status). Then, the screen can be updated (the module status can display the wafer in LL/ΡΗΤ; the second buffer) One of the (p^T) modules Π recipe start &quot;; state glory can be updated (module status can be changed) wafer processing. Receiver's sense of sensation can start 5 records, recipe cycle through processing Step; the 'buffer (ΡΗΤ) module can transmit a, recipe end, event; the sensor can stop the recording tool to move the wafer to the first buffer (loading lock chamber) module; vacuum The state changes from vacuum to atmospheric pressure, the tool moves the wafer away from the first buffer (loading lock chamber) module, and the status screen is updated. ^ ' In 235, post-processing measurement data is available. Data can be obtained after a delay, while The time delay can vary from a few minutes to a few days. After processing 27 1283024, the measurement data can be used as part of the feedback control. In addition, the material can be used as a statistical value of the nano wafer according to some front gauges.资 = The pre-measurement data calculated by y control and a different morality directly measured poor material. In addition, after adding J1, the amount of the dragon can be measured by the base. H belongs to the outliers and is not static in the static. The unreliable scenes can be discarded and not used in w: the seed type ί ‘“average/(7 comparison method can be used after the Guardian Measured i difficult 2 and &,; can, determine - sigma multiplier; can sum all data points into a sentence value "one sigma, can calculate two limits (average + X times σ and average _ χ # 1 Except for the points of money outside the limit; the average value can be calculated and can be measured by the Μ 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 或者 或者 或者 或者 或者 或者 或者 或者 或者 或者 或者 或者 或者 或者 或者 或者 或者 或者 或者 或者 或者: After processing, the measurement data is compared with the pre-processing measurement data to determine j. After the addition, the cd data can be expressed from the process or process steps. In addition, the amount of trim measured during a process can be regarded as a line-money. The mosquito has been touched. For example, 1 has been completed. #This has been completed, the program · 22〇. When the process is not completed, the program 200 diverges to the step to listen to the process error - the estimated number, indicating the process tendency and reprimanding the state to take the optimization process model and recipe parameters. For example, the control strategy can be based on a η. The parental control strategy can be implemented. The control strategy is based on the evaluation. (4) The strategy can include, or multiple controls. ^ Including the control model ° When the multiple control model is executed at the same time, the output of the self-first type may be used as at least the control tear of each of the next control group. There are 28 1283024 with forging, and the I chest contains the control. The control strategy includes one or more table drivers. All (four) ° lifts in the control model can be stored in the database by the π π 啕 group. To be gray = a step to make a play to download the secret recipe. The user can save the binary file, the module recipe name, the group, the % screen can contain the display control strategy, the control plan, the tree view. The user can create and transfer people. Remittance: π, Tu Nahe choose an object and establish a new correlation. For example, if a control strategy is selected and a new control Η·昼 is selected, the control plan can be related to the control strategy. The name of the tree can display the pure formula name of the control strategy and the module of the control plan and the next '- some GUI screens can be related to the 跋 controller, each different individual function. For example, a batch (Run t〇Run) controller flash tli allows the user to switch to other screens; - formula screen screen allows the user to look at the jade process recipe Wei in the early position, select a certain number to test the succession, and lose = Under the system number and the upper process variable limit; a control formula screen can make the user happy, the selected tool recipe formula variable to be controlled and input each recipe step ^ parent control number setting; Controlling the tear screen can make the red and control system Defeat action #讯与(4) Integration of algorithm information (4) Configuration of the message = Deguyi, and allows a user to input the trimming etching associated with each control recipe = to load a simple wire; and - control The county can let the user view the run to run control program and the status information related to the control wafer. 29 1283024 One process batch (mn-to-mn) control exemplifies the configuration program As follows: ι· Select the recipe range screen and configure it based on the preset value. 2 • Switch to control recipe screen and configure it based on recipe range configuration 3. Switch to control screen and configure integrated label (label ), control tag and algorithm tag. 4. From the control program, the algorithm tab, switch to the box view window and set the box based on the control recipe configuration. 5. Switch to control status screen and view selection Historical or operational control of the state of the wafer and control of the wafer state. An exemplary recipe range screen is shown in Figure 6. This kind of screen allows the user to view the tool recipe recipe variables in units, select control changes Enter the control variable below and the upper process limit. The description of each variable is editable. The recipe range screen can contain some configuration items. Table 2 shows an example view of some configuration items on the recipe range screen. 2 Recipe range configuration display item No item description Name Name of the recipe range. The user can enter the recipe range name after selecting the new or copy button. After selecting the edit button, the recipe range name cannot be changed. Null, Nominal, and Default are used as the formula range name. Description (Description) Description of the recipe range. One 'one—The recipe range can contain at least one checkbox. For example, a protection check box. Table 3 shows an example of some of the check box items on the recipe range screen. Table 3 Description of check boxes for recipe range configuration Check box Description ~—-- Protection The GUI only allows you to enter the limit of the finer. For the control formula, only the protected formula is that you do not choose to protect the protection of “Yu 30 1283024. Table 4 shows some of the recipe range screens when the protection is activated. Table 4 shows the project shed description. ^~ --—— Control The controller ID is a control variable. Variable (unit) [variable (unit)] Early private tool C} UI style 〇 This is read-only. Lower Limit The lower limit of the tool recipe variable. Save the value by clicking on the store. Upper Limit The upper limit of the tool recipe variable. Enter the value by clicking Save. Description Controls the description of the variable. The default values are based on the tool recipe ϋ. The variable description is used to supplement the control memo of the control variable. Table 5 shows an example view of some of the button items on the recipe range screen. Table 5 Description of the recipe range on the recipe range Button Description Reset Reset to the default settings. Prepare preset settings according to the process tool settings. 0K (confirm) Saves the recipe range to DB and sets the screen to view mode. At this point, the recipe range configuration cannot be edited. If a duplicate recipe range name is found, a message box window opens. Save Saves the recipe range to the DB. Recipe range information is editable 31 1283024 White f. If a duplicate recipe range name is found, then a message box is opened.

The area of the area is shown in Table 6. Table 6 shows the example of some of the extra button items on the recipe range. The button on the screen is called la ------_ Description + Close Closes the recipe range screen and returns to R2R control. Screen. If clicked during editing, a message box is opened. New Establishes a new range of formulations associated with a process chamber. Click on this system to connect. The recipe range name must be entered. _1 (Copy) Click the recipe range name as the copy source. Click C〇py to copy the recipe range for this selection. In the default state, the copied recipe range is not protected and the recipe range name is blank. Edit The user views the recipe range and clicks Edit to change the existing recipe range settings. Do not choose protection before editing. Once you have not selected protection, you can edit the configuration table. Delete Click on Delete to delete the existing recipe range. Delete all relevant control recipes before deleting the recipe range. If you choose Protect, the delete button has no effect. A recipe range Navigator panel is displayed on the left side of the recipe range screen and the recipe range is associated with each process module. The user can manipulate the recipe range by clicking on the recipe range name on the tree table and any lower end operation buttons. For example, as shown in FIG. 6, by using a recipe range screen, a user can perform a recipe range configuration, view an existing recipe range, create a new recipe range, copy an existing recipe range, and edit an existing one. The scope of the recipe, as well as the deletion of an existing recipe range. In addition, the R2R controller screen, such as a recipe-wide screen, can include a button to view software and tool version information. 32 1283024, FIG. B shows one of the control screens according to one embodiment of the present invention. This screen allows the user to view the tool recipe selected by the candidate (4) and edit each recipe step. Each of the control variables is set. : The control gamma screen can contain some configuration items. Table 7 shows an illustrative view of some of the configuration items on the control recipe screen. Table 7 shows the project. Display project of a control formula configuration

Name

Description — Cell Edit Counter Controls the recipe name. When selecting a new or copy button, the user must enter a unique control recipe name. When the edit button is clicked, the user cannot change the control recipe name. Retain the number of inputs, for example, the space, the amount 矣gjgminal), and the name of the default to control the recipe description GUI calculation variable phase setting input. This is a read-only chart. Figure 8 shows an example of some of the display table items on the control recipe screen. Description of the item ~'' 1 Variable (unit) [variables (units within η have unit control variables. Read only shows the group) State setting Lower limit The lower limit of the tool recipe variable. The value must be capped by the Upper tool recipe recipe variable. The value must be determined by a Description control variable from the recipe range configuration setting. 33 !283 〇24 ------ Step 1-24 (Steps 1 - 24) Control Recipe Display Control Recipe ^ 9 Guarantee 1 ί Procedures Step 1_24 Controls the light setting. The number is below 11. If the control variable is time, Use the At least - check box, for example - the Dump check box. Table 9 Illustrative views of some checkbox items on the screen. Diamond Checkbox | Marquee ~~--- Protection GUI k Check whether the input value of the variable is within the respective lower and upper limits: if they are within the limit, store these settings. If not, prompt the user to change these settings. In the control plan 昼^ If you do not select protection and save these, the control will be removed from all control recipes. The control formula can be stored only when no protection is selected. In addition, the control table 10 displays the control table. (4) An illustration of some of the button items on the screen that can be included in the “Finger” menu. Description of the button button for the recipe button----------- Clear Clear all the step settings. Open a message Sl 〇Ok (confirm) before clearing the settings. Save the recipe to DB and set the screen time. You cannot edit the recipe range configuration. If a duplicate recipe range name is found, open a message box window. Save) Save the recipe consumption to DB. The recipe range information can be edited. If a duplicate recipe range name is found, then the message will be turned off. 0 0 34 3483024 Now change the status, close the control recipe area window ^ A control formula Navigator panel is displayed on the left side of the control recipe screen, and the control recipe is related to each recipe range. Double-layer folders (modules and recipe ranges) are A tree structure is displayed. A user can operate the control recipe by clicking on the tree table and the name of the control recipe on any lower operation button. A user can click on the tree table and the formula on any lower operation button. Range name to operate the recipe range. For example, as shown in Figure 7, by using a control recipe screen, a user can perform two control recipe configurations, view an existing control recipe, create a new control recipe, and copy an existing one. Control recipes, edit an existing control recipe, and delete a saved control recipe. Figure 8 shows an exemplary view of one of the control strategy screens in accordance with one embodiment of the present invention. The control table slightly contains the system recipes to be matched and other criteria to match the benchmark. The control strategy also includes several control plans that include the information needed to select the control model to be executed. A control strategy screen allows the user to download a system recipe with a control room flag or manually enter a system recipe name with a transfer path. Again, a selection match criterion is established selectively. A control strategy screen can contain some configuration items. Table u shows an illustrative view of some of the configuration items on the control strategy screen. Table 11 Control Strategy Screen Emblem Description Name Description Control Strategy Description Features

Name Description

Enabled Start Control Policy

Protection System Recipe Air System ϊϊϊϋϋ to download the system from Telius. The system recipe name can be a direct name. System power supply g with the situation is used to touch 35 1283024 Table 12 situation Control strategy Description --- Dong key 1 strategy. ^s'~S--1 Select selects the selection, but the Transfer Route is the system that is selected according to the formula. (Show) According to the module node diagram, a module is displayed. ) —-j-=-口d guide ί跋 Λ Λ = When the room button is pressed, the room color is pink. Metrology Data Failure From the following options when the towel-a: Xianli: Wafer or follow the tool parameter settings. Refer to the action on ift^. J Select Failure Select one of the following options: Use ^Ξϋ or follow the tool parameter settings. Tool Pause on Failure Select ΡΜ Pause or System Pause ～ Wafer Contexts _ A T7L· rix Tflv Displays the wafer condition. An illustration of some of the additional configuration items on the screen. Batch ID

LotID (8) CJID (8) PJID(s)

Cassette ID(8)

Carrier ID(s)

Slot(s) code Number of slots

Wafer Type(s) 36 1283024

(Wafer type) Scribed Wafer ID (8) (昼 wafer identification code) ----------- Substrate ID(s) (Substrate ID) ~~~ -~----- Wafer ID (8) (Wafer Identification Code) Start Time Start Time ---~~__ (Start Time) Shih Lin, she is in 1丨wiL Table 13 Control Strategy Button Description - OK (OK) will control The recipe is saved to the database and the screen is set to view mode. At this time, the control strategy configuration could not be edited. If a name is found, a message box window opens. Save Saves the control strategy to the database. Control strategy information is editable. If a duplicate control policy name is found, a message box window opens. Cancel Close the kiln over the stalled area without change. Also, the policy screen can contain additional options, such as button items. Table 14 shows an illustrative view of some of the additional button items on the policy screen. Table 1 j_ button button Description Close Closes the control strategy screen and returns to the batch (Run to Run) controller 37 1283024 ------ m · — π New (new) New control strategy . Turn in the 苹 苹 ^ ^ Copy (copy) k select ^ system strategy and click Copy. In the default state, the copied _ check disk protection and the control policy name are blank. Edit --------_— Delete Lets you view the control policy and click on “Edit” to edit the existing control policy configuration. Do not choose protection before editing. The configuration can be edited as soon as the second is closed. ‘, the user views the control policy and clicks Delete to delete an existing control policy. If the control policy is protected, the delete button has no effect. Move The user views the control policy and sets the target file to nothing. Fresh control Mulberry can be moved to the proposed folder. If the analog control strategy lacks synchronization with the system recipes of the process tools, they cannot be moved to the Standard &amp; folder. Test fJs configuration button. Click to test the control strategy _. It only works when R2R is connected to the tool. ...μ π is called low. You are not on the left side of the track strategy screen. The fresh type file is missing the Γ 有 有 ΐ ΐ 鲜 鲜 鲜 鲜 鲜 鲜 鲜 鲜 鲜 鲜 鲜 鲜 鲜 鲜 鲜 鲜 鲜 鲜 鲜 鲜 鲜 鲜 鲜 鲜 鲜 鲜 鲜 鲜 鲜 鲜 鲜 鲜 鲜 鲜 鲜 鲜 鲜 鲜 鲜 鲜 鲜 鲜 鲜 鲜 鲜 鲜 鲜 鲜:. Into the basic simulation control strategy, but only - a standard type of book to execute. Standard control weaving can be moved from the standard folder i ϊ ϊ ϊ i i 控制 控制 控制 控制 控制 控制 控制 控制 控制 控制 控制 控制 控制 控制 控制 控制 控制 控制 控制 控制 控制 控制 控制 控制 控制Secondly, the ancient cookware is downloaded. The control strategy of the protection has the control of the H-only control on the side of the control strategy. 38 1283024 A case is shown in Figure 8, by using a control strategy. Screen. A user can perform a policy configuration, view an existing control strategy, establish a new control strategy, create an existing control strategy, edit an existing control strategy, and delete an existing control. Figure 9A-9C shows an exemplary view of a control meter screen in accordance with an embodiment of the present invention. These screens allow the user to configure integrated control information for the process tool to control the process and control failure actions. Algorithm information system, and in, soap box table, the user can input a trim etch recipe associated with each control to buy boxed.

In Fig. fA, an integrated tab page is shown in accordance with an embodiment of the present invention. The control plan can contain some configuration items. Table ls shows an illustrative view of some of the configuration items on the control screen. Feature Description Name Controls the name of the meter. Description Control instructions. Protection When the worker protection is selected and OK or Save is selected, the software logic checks this configuration. If this configuration fails, one of the reasons why the statement failed is turned on. Since only one standard control program can be triggered at a time with the pure formula § &amp; the software logic K performs the control of the upper red end. configuration. System Recipe Module Nominal Rceipe (Rated Formula) 39 1283024

Data checkbox Target The user enters the target CD value with tolerance. The input target CD with the measured initial control CD average is used to calculate the trim amount for control recipe selection. If protection is selected, the input target CD tolerance is compared to the input in an algorithmic trimming etch, ' ' — — — _ Target Calculation t = f(d,o) ( Target meter nose t= f(d,〇)) Source # (Source#) -—— Model Selection Table 1 1|| 丨-- Table l6 does not control some extra buttons on the screen An exemplary view of the purpose. &gt; 16 Control Extra Buttons Button Description Closes the control screen and returns to the Run to Run controller to create a new control meter. Input control meter name and integration information combined with process tools to control CD information and control error actions, while algorithmic information can be used to protect the environment before it can be protected and stored! Each control recipe.

New (new)

Copy (copy) selection, system copy. Pre-^————;-Protect and control the name of the meter ^Edit | Edit (Edit and click) leg 1283024 昼 configuration. Edit the configuration without editing before editing.

Delete

f User view control, use the control plan and ΐΐ Λ Λ 1 and location. The standard control plan can be moved to the =^ folder. If _ control young woman program = wing more ^ cattle folder = type configuration button. _ Point County selects financial measurement data to test the control area. It has ^ mm II7Γ in the “unconnected state”: * The standard type file contains the standard control of the process jade ^ 22 T) integrated control). The analog type folder contains an analog control book. For the modulo ;=,,, the micro-control on the visor is to be touched i-moving is = type. Receiving and processing measurement data and selecting control surface 2;;: The recipe is recorded instead of being sent to the process tool. Multiple, the program 昼 display item can include the control plan name - name block; control fdan description one of the block; and a protective box. This configuration can be programmed when the protection is not selected. , μ # In the center of the control plan configuration screen, there are three tags · integrated tags, control private iron and algorithm tags. ^ Some of the descriptions are also displayed, which include: a confirmation (ΟΚ) button, a save (Save) ^ button, a delete button (Cancel) button, a close (Close) press sister, a new slot case (New ) The button, the Edit button, and the Delete button are used to create, delete, view, and edit control recipe items. The System Recipe Name Block and associated selection buttons provide a means to download system recipes from a tool (Telius) and display them. Moreover, a user can directly access the system recipe from the window of the window '4 2; = open: load: = window, and the system formula of the system. ..., silly selection from the R2R control available in the __ system recipe. The R2R control in the remotely selected system recipe contains the name. The path block is based on the selected system recipe process! ^ The sequence button displays the control room. . Ding Wei, first formula path. The valley-to-control control system is included in the system recipe from the aids, and the program will be associated with the simulation folder. 2 H'w system selects the recording sensitivity control^. In order to make the money in the room sequential node diagram in Figure 9B, a control tab page is based on _ for example, in the butterfly __ there are three = no amount: _ _ _, _ in the recipe CD, off and accept: Ί Ί CD CD ' ' ' ' ' ' ' ' ' ' ' ' ' ' ' ' ' ' ' ' ' ' ' ' ' ' ' ' ' ' ' ' ' ' ' ' ' ' ' ' ' ' ' ' ' ' ' ' ' ' ' ' ' ' ' ' ' ' ' ' ' ' ' ' ' ' ' ' ' ' ' ' ' ' ' ' ' ' ' ' ' ' ' ' ' ' ' ' ' ' ' ' ' ' ' ' ' ' ' ' ' ' ' '飧 雷浐 choose the CD calculation method (step average or crystal averaging) without ft nu. 1 test step Xie Li shows the IM measurement step. If the money chooses the step average: ίΪί, the user must specify the service measurement step. If you choose the average wafer no, the electric touch, the Wei-shaped measurement step riding the new field in the "identification (four) 曰 ”" Fu. After the maker selects the measurement step, the manufacturer can enter a description of the placement step. The target CD field provides a user with one of the target CD values with tolerances ίίί. The input target CD with the measured initial control CD average is used to calculate the positive etch amount for control recipe selection. If protection is selected, the input target CD tolerance is compared to all trims entered on the algorithm label. 42 1283024 Optional failure or variable setting failure to generate 'The user logic option: u use the aid process recipe (default formula). Software work round (Draw the ancient, D tool, and the tool uses the tool recipe recipe. 2) No two: Round the relevant empty formula information to the process control (None) to open without breaking. 3) Stop batch (*) dry. - Algorithm Tag 1 is a simple and difficult algorithm that can be based on the embodiment of the present invention. It can be based on one of the trimming side quantities r mirZr\ '. If the selected control recipe setting is on the process tool and the name of its associated system variable is preset to, default, ', it can result in the use of the same fixture recipe that will be trimmed. There are two of her. The box nbutton is used to open the G) for the configuration of the control recipe and the trim amount, and the clearing press ^ (flear button) can be used to clear the box table setting. Has three parts. The box table boundary input allows the user to view all the recipes for the selected formula. The user must click on the Control Recipe and Control Recipe 2 ΪΪΓ1 to create a Recipe Selection window. In the case of two visits, select the one from the table and enter the trimming amount of the parent control formula. The software logic calculates the total amount of etching for the two visits. The Tianshen Ξΐϊϊ Ξΐϊϊ Ξΐϊϊ is located at the bottom of the screen. The Control Recipe Viewer allows you to control recipe information and descriptions. The meaning of the control recipe is based on the display from the control communication r. When a user chooses to control the recipe 1 or control the storage of the recipe 2, the control gamma is enabled and allows the user to select the control recipe. In the default state, the name, the amount, the, and the empty, appear first in the two cells. Empty means not to deal with the choice of this choice. If a new control formula is attached to the control curtain with the phase _ recipe, the ship can be configured to control the selection. New, let ^ select the new control recipe in the window.狐 配 43 Ϊ Ϊ Ϊ Ϊ Ϊ Ϊ Ϊ 43 彳 彳 彳 彳 彳 彳 彳 彳 彳 彳 彳 彳 彳 彳 彳 彳 彳 彳 彳 彳 彳 彳 彳 彳 彳 彳 彳 彳 彳 彳 彳 彳 彳 彳 彳 彳 彳 彳 彳 彳 彳 彳 彳 彳 彳 彳Below the box table and the upper border are displayed on the algorithm tab page, bit _ 2 mesh box table +. Box _) block display box name; lower (L_) block, upper (UPPei:) block display box upper border; side (Etch) t, „, page does not always trim side amount; _ __ block Display the first visit to the repair/inside 'side 2 (face 2) block display the second visit trimming side amount; the control formula ontrojRecnpei) the block display the first visitor control gaze name; and the control formula 2 (C0ntr〇l Recipe 2 The /bit displays the second visit control recipe name. In Figure 11 "shows the control state according to the present invention - the control state honor screen = ignores ®. This screen allows the user to view the selected lion micro control wafer status information. ! A = status screen can contain some configuration items. Table 17 shows an example view of some of the configuration items on the Control Status screen.

Nominal Recipe - 2nd (Rated Formula - 2nd) Target CD with tolerance (Target CD with tolerance) Control of the second access chamber Basic reference process recipe Table mouth Control status. Unit is nanometer

Transfer Route System Recipe Path

Measurement data for Chamber sequence 44 1283024

. Table 18 shows the control status Table 18_ Extra Control Cancer Cancer Screening Display Item ——---- Description * —1 —丨 1^^ (Mode) Proposed or tested. _ CJID 丝里王码 _ Process identification sarcophagus PJID Slot Π) (slot identification code) Wafer ID (wafer identification code) The wafer identification code is displayed in order of priority. Displayed if there is a twisted wafer identification code. If there is no jliMM, it means that the etched stone from the host is e 〇 Init·CD (initial CD) The initial cd Kch of the CD control average is the total amount of etching in the control book. Etch 1 (etch 1) The amount of time required to configure the first control visit or chamber in the control meter. Etch 2 The amount of time remaining in the second control visit or chamber of the control meter. Control Recipe 1 Controls the name of the first control visit or chamber. Control Recipe 2 Controls the name of the second control visit or chamber. Result The result of controlling the wafer. There can be four values. • Selected - Successfully selected control recipe • Choice error - Control recipe selection failed • Link error - Telius_Ingenio communication failed. • Data error - measurement data error

45 1283024 In addition, the Control Status screen can contain a number of selection items. For example, Button Items Table 19 shows an example view of some of the button items on the screen. Table 19 Control Status Screen Buttons Button Description Close Switch from Control Status to Run t0 Run Controller. Select Opens the control status display selection window. ~ In the embodiment shown, a COR module, a UI module, and a Dp module are displayed in a group. Sub-panels can be used to display the data for each process module. Information about the wafers currently in a process module can be displayed on the legs, RunID, and Plane positions. For example, the PM can be the name of the process module; the RunID can be the identification code of the current crystal formulation; and the Plan can be the name of the current implementation on the wafer. For example, as shown in Figure 12, a user can view a state of the glory to ensure that 4 stays in a c〇r ΐί, a PHT module and/or an 0DP module using the correct data collection plan. For example, a user can confirm that appropriate measurement data is being collected. In the embodiment of the present invention, the display unit is shown in the embodiment of the present invention. The system displays the C0R module, the pHT module, and a Dp display. With the maintenance counter. In addition, the module-related data collection is displayed in the == group. A user can be changed by using the analysis plan and the = capacity room can be configured in the system, and the room group is easily changed to the screen. ΐ ΐ 于 Η ’ ’ 依据 依据 依据 依据 依据 依据 依据 依据 依据 依据 依据 依据 依据 依据 依据 依据 依据 依据In the list of 46 1283024, a C0R module, a PHT module, and a 0Dp tree are displayed to display the sensor and maintenance counters associated with each module. In addition, modules can be used to collect data and strategies. In addition, the module pauses the group modules. - The user can configure the pause action by analyzing the plan and strategy. The life of the eight times (1111^〇_11111) control program matching can include data collection and planning. The ._ GUI can be provided to set the control to match the situation. Control plan definitions are allowed for users above the normal security level.

It is a combination of a process module and a process recipe. Because the second system allows multiple system recipes to contain the same process recipe, the illusion allows multiple control strategies to share a single control plan. 々 Different process module recipes may have different process module recipe limits. Therefore, the parent, control 4 needs to be able to set the recipe limit for the recipe modification, and the recipe modification is to be transmitted to the tool by the R2R controller. The control plan specifies the minimum and maximum range of one of the control models to be used. Control, module range may overlap. If there is no minimum and/or maximum range, the scope of the omission will not be limited. One way to make a R2R controller is when a system recipe has been established

The tool is linked to one of the tools (Telius) recipes to control the creation of the strategy. The user can enter data collection and analysis for each module. The user can enter the control unit (the rib chamber (4), analytical algorithm) for the specific chamber to be controlled. The modular versions of COR, PHT, 〇DP, and buffer chambers can be stored in the database. Therefore, a user can configure the instance of the module after the COR, PHT, 〇Dp, and buffer chamber are installed. For example, you can configure the screen using a module instance that is part of the system. In addition, strategies and calculations can be established for the buffer chamber by using the data manager screen for C〇R, pHT, 〇DP. For example, a user can establish a data collection strategy and analysis strategy for the C0R, ΡΉΤ, 〇Dp, and ^47 1283024 rush chambers when these module instances are placed on the module instance screen. Chart screens can also be used for C〇R, ΡΗΤ, ODP and buffer rooms. The data management system collects trace log files and processes the records in the COR and PHT rooms. The tracking record data selected according to the DC program will be stored in the database; the user can use the data selected according to the DC meter for analysis; the user can use the data selected according to the DC meter for tabulation . In addition, a GUI screen can be used to display the necessary information about the c〇r and pHT processes during operation. The user can use the module pause feature to pause a c〇R&amp;/ or PHT room if it is set.

The TL controller can perform a module pause when it detects a SPC alarm for a c〇R chamber parameter or when it detects a SPC alarm for a PHT chamber parameter. Model pauses can be configured by using / analyzing the analysis strategies and analysis of each chamber. Figure 15 is a schematic cross-sectional view showing a processing system in accordance with an embodiment of the present invention. In the embodiment shown, a processing system 12 is provided for performing a chemical treatment and heat treatment of a substrate. The processing system 12A includes a thermal processing system 121A coupled to a chemical processing system 122A coupled to the thermal processing system 121. The heat treatment system 1210 includes a heat treatment chamber 1211 that is temperature controllable. The chemical processing system includes a chemical processing chamber 1221 that is temperature controllable. The heat treatment chamber 1211 deuteration treatment chamber 1221 can be insulated from each other by using a heat insulating member 1230, and can be vacuum insulated from each other by using a gate valve assembly 1296, which will be described in more detail below. As shown in FIG. 16 and 16 , the chemical processing system 122 further includes: a temperature control base configured to substantially adiabatically and chemically dispose of the chemical processing chamber to support a substrate 1242; The gas system 125A' is coupled to the chemical processing chamber ΐ22ι = evacuated chemical processing chamber 1221; and a gas distribution system 1260 for introducing a process gas into one of the process chambers 1262 within the chemical processing chamber 1221. As shown in FIGS. 15 and 17, the heat treatment system 121 further includes: a temperature control substrate inside the chamber 1211 and is disposed on the surface of the heat treatment and heat treatment to 1211, and is arranged to be a branch-substrate (four); A vacuum pumping system _ to 48 1283024 pumping heat treatment chamber can be; m plate up and down components ·, connected to Ligu to un. The lifting rod assembly 129 can vertically move the base and the second teeth 1242 between a support plane (real) or one of the transfer planes. The heat treated valley to 1211 may further comprise an upper jaw and member 1284. Further, the sewing chamber 1211, the chemical processing chamber 1221, and the heat insulating member 123, and the second sealing portion 1294' - the substrate can be transported via the common sealing portion. In the processing section, the cooperating portion 1294 can be hermetically sealed by using the _off assembly 1296 to allow for independent processing in the two chambers 12u, 1221. Further, a transport opening portion 1298 can be formed in the heat treatment chamber 1211 to allow the substrate to be exchanged with the transport. For example, the second thermal insulation component 1231 can be internally insulated to thermally insulate the heat treatment chambers 1211 (not shown). Although the opening portion 1298 is shown as a portion of the heat treatment chamber 1211, the delivery opening portion 1298 may be formed in the chemical processing chamber 1221 instead of the heat treatment chamber 1211, or the delivery opening portion 1298 may be formed in the chemical treatment volume. The chamber 1221 is in both the heat treatment chamber 12u. As shown in Figures 15 and 16, the chemical processing system 122 includes a substrate support 1240 and a substrate support assembly 1244 that permits thermal control and processing of the substrate 1242. The substrate support portion 124 and the substrate support portion assembly ι 244 may include an electrostatic chucking system (or mechanical clamping system) to electrically (or mechanically) sandwich the substrate m2 to the substrate support portion 1240. Further, the substrate support portion 1240 can, for example, further comprise a multi-zone temperature control system that can receive heat and transfer heat to a heat exchanger system (not shown) that can transfer heat from the heat exchanger system upon heating. In addition, a heat transfer gas can be delivered to the back side of the substrate 1242 via a back gas system to improve the thermal conductivity of the gas-gap between the substrate 1242 and the substrate support 124. For example, the heat transfer gas to the back surface of the substrate 1242 may include, for example, helium, argon, helium, nitrogen, a process gas such as CF4, QF8, C5F8, C4F6, or the like, or other such as oxygen, nitrogen or hydrogen. Gas. This system can be utilized when a temperature control substrate is required to raise or lower the temperature. For example, the backside gas system can include a multi-zone gas distribution system, such as one of two zone (center-edge) systems, in which the backside gas 49 1283024 gap pressure can be independently varied between the center and edge of the substrate 1242. In other embodiments, the multi-zone temperature control system can include a heating/cooling element (e.g., a resistive heating element), or a thermoelectric heater/cooler. An exemplary thermoelectric element is available from Adva^ed

Thermoelectric, model 叩127] This 8 5M (4 〇mm X 40mm X 3·4mm thermoelectric device with a maximum power transfer of 72 watts) is a solid component. Further, an additional heating/cooling element can be disposed on the wall of the chemical processing chamber 1221.

The substrate support portion 1240 can include a connection substrate support portion 124, a chemical processing chamber junction assembly (not shown), an insulation assembly (not shown), and a temperature, assembly (not shown). The chamber junction and temperature control components can be manufactured, for example, from the upper Lu: non-recorded steel, material-electric and hot lions. Insulation device chain === heat transfer coefficient such as quartz, oxygen touch, iron "if if support 124G can contain &quot;&quot;&quot;&quot;insulation_ (not shown) in order to provide - for example, '- The fill-and-turn can further include a lift pin assembly (not shown) that can lift the support substrate and move the substrate back to the base plate

The temperature of the substrate support ΐ 124G can be monitored by using a temperature sensing device (not shown) such as a thermocouple (e.g., a two-sensor, etc.). The temperature measurement is then performed as a temperature control of the substrate support portion 1244 to control the temperature of the plate portion 124G. Paste (4), adjustable - fluid == degree, heat transfer _ heavy class, heat transfer gas pressure, clamp ί current or voltage, thermoelectric device current or polarity, etc., continuous pure substrate reading part 124G temperature towel change. Referring again to Figures 15 and 16', the chemical processing system 122G includes a gas distribution quarter-over-system (not shown) that can be coupled to the gas distribution system 1260. 'Using|, (4) 8 is not used to dispense a process gas comprising at least two gases. 50 1283024 One gas distribution system 1260 comprises: a gas distribution assembly 1422 having one or more elements 1424, 1426 and 1428; a first gas distribution plate 1430 coupled to the gas distribution assembly 1422 and specifically formed to connect a first gas to the chemical processing chamber 1221; and a second gas distribution plate 1432 coupled to the first gas distribution plate 1430 And forming a process space for connecting a second gas and the chemical processing chamber 1221. The first gas distribution plate 1430 forms a first gas distribution plenum 1440 when coupled to the gas distribution assembly 1422. Further, the second gas distribution plate 1432 forms a second gas distribution inflation chamber 1442 when connected to the first gas distribution plate 1430. Although not shown, the gas distribution plenums 1440, 1442 may enclose one or more gas distribution baffles. The second gas distribution plate 1432 further includes: one or more holes 1444 of a first array, and one or more channels 1446 formed in an array of the first gas distribution plate 1430 are connected and overlapped; One or more apertures 1448 of the two arrays. One or more apertures 1444 of the first array associated with the array of one or more channels 1446 are specifically formed to distribute the first gas from the first gas distribution plenum 144 to the process space of the chemical processing chamber 1221. One or more apertures 1448 of the second array are specifically formed to distribute the second gas from the second gas distribution plenum 1442 to the process space of the chemical processing chamber 1221. The treatment gas may include, for example, NH3, liF, H2, ruthenium 2, CO, C02, Ar, He, and the like. Each aperture 1444, 1448 includes a diameter and a length, wherein the diameter can range from about 〇1 to about cm' and the length can range from about 〇5 mm to about 5 cm. Because of this configuration, the first gas and the second gas system are independently introduced into the process space, and do not affect each other except in the 'process space. The crucible, the body I30 is transferred to the first gas distribution plenum 1440 by a first gas supply formed in the gas distribution assembly 1422. In addition, a second gas supply passage (not shown) in the gas distribution assembly 1422 is used to transfer the second gas distribution check 1442. k The temperature-producing 32 2^16, the chemical processing system 1220 further includes a maintenance-control chamber 1221. For example, a wall heating element 1266 soil/dish control unit 1268, and wall heating element 1266 can be specifically formed by 51 1283024 to connect chemical processing chamber 1221. The heating element may, for example, comprise a resistive heater element such as tungsten, nichrome, aluminum-iron alloy, aluminum nitride or the like, such as a filament. When current flows through the filament, the power is dissipated as heat, and thus, the wall temperature control unit 1268 can include, for example, a controllable DC power supply. For example, the two wall heating element 1266 can comprise at least one Firer〇d collet heater commercially available from Watlow Corporation (131 〇Kingsfand Dr" Batavia, IL, 60510. It can also be used in the chemical processing chamber 1221. A cooling element. The temperature of the chemical processing chamber 1221 can be monitored by using a temperature sensing device such as a thermocouple (e.g., a K-type thermocouple, a pt sensor, etc.). Further, a controller can be utilized. The temperature measurement is fed back to the &amp; wall temperature control unit 1268 to control the temperature of the chemical processing chamber 1221. Referring again to Figure 16, the chemical processing system 1220 can further include a temperature controlled gas distribution system that can be maintained at any selected temperature. 1260. For example, a gas distribution heating element 1267 can be coupled to a gas distribution system temperature control unit 1269, and the gas heating element 1267 can be specifically formed to connect the gas distribution system 126. The heating element can, for example, comprise For example, tungsten, nickel-chromium alloy, aluminum-iron alloy, aluminum nitride, etc., such as a filament, when the current flows through the filament, the power is dissipated as heat. Thus, the gas distribution system temperature control unit 1269 can include, for example, a controllable dc power supply. For example, the gas distribution heating element 1267 can include a dual interval of 14 〇〇 γ (or W/m2 $ power density). The temperature of the fluorenone rubber heater (the surface of the enamel rubber heater) 1260 can be monitored by using a temperature sensing device such as a thermocouple (e.g., a κ type heat, an even, a Pt sensor, etc.). Furthermore, a controller can use the temperature lion to assign a temperature control to the thief to control the temperature of the gas distribution system 126. Alternatively, in any embodiment, a cooling element can be employed. Still referring to Figures 15 and 16, the vacuum pumping system 1250 can include a vacuum pump 1252^-gate valve 1254 for compressing the chamber pressure. The vacuum pump 1252 can include one of the evacuation rates of up to 5000 liters per second (and greater than). Turbomolecular vacuum pump (TMP). For example, the DMP can be a Seik〇STP-A803 vacuum pump, or a 52 1283024 ara T130|W vacuum pump. TMP is low pressure processing (-typically less than 50mT〇rr). Pressure on (ie, greater than 1) 〇mT〇rr) or low-throughput processing (ie, no, a mechanical pressure pump and a dry low vacuum pump can be used. Referring again to Figure 16, the chemical treatment system 1220 can further include a controller 1235, two having The processing state, the memory, and a digit 1/〇埠 can generate a control voltage sufficient to pass the input to the chemical processing system 1220 and monitor the output of the chemical processing system 1220 from, for example, temperature and pressure sensing. The 1235 can be coupled to the substrate support assembly 1244, the gas distribution system 1260, the vacuum pumping system 1250, the gate valve assembly 12%, the wall temperature control unit 1268, and the gas distribution system temperature control unit 1269 and can exchange information with them. For example, a program stored in memory can be utilized to initiate these inputs to the aforementioned components of chemical processing system 1220 in accordance with a process recipe. In an alternative embodiment, a chemical processing system 122 can further include an optical inspection window (not shown) and at least one pressure sensing device (not shown). . As illustrated in Figures 15 and 17, the heat treatment system 121 further includes a temperature control substrate 1270. The substrate support portion 1270 includes a fixed base 1272 that is thermally insulated to one of 1211 by heat treatment using a thermal barrier 1274. For example, the substrate support portion 1270 is made of aluminum, stainless steel or nickel, and the thermal barrier 1274 can be made of a heat insulating material such as iron fluoride, oxidized or quartz. The substrate supporting portion 127 further includes a heating element 1276 embedded therein and a substrate supporting portion temperature control unit 鲁 278 connected thereto. The heating element 1276 can, for example, comprise a resistive heating element such as tungsten, nichrome, ferrous alloy, or nitriding, such as a filament. When current flows through the filament, the power is dissipated as heat, and thus, the substrate support temperature control unit can include, for example, a controllable DC power supply. Alternatively, the heated substrate support portion 127 may be, for example, a casting commercially available from Watk) w (^, ataKingslandDr, Batavia, IL, 6〇51〇) having a maximum operating temperature of 400 to 45 〇t. A heater, or a thin film heater of aluminum nitride material, which is commercially available from Watl〇w, and has an operating temperature of up to 23.25 w/cm2. Power density. Alternatively, a cooling element can be incorporated into the substrate support 127. 53 1283024 The temperature of the substrate support portion 1270 can be monitored by using a temperature sensing device (not shown) such as a thermocouple (e.g., a κ type thermocouple). Furthermore, a controller can use temperature measurement as feedback to the substrate support temperature control unit 1278 to control the temperature of the substrate support 1270. In addition, the substrate temperature can be monitored by using a temperature sensing device such as a fiber optic thermometer or a band edge temperature measuring system commercially available from Advanced Energies (1625 Sharp point drive, Fort).

Cc^ins, CO, 80525), model 〇R2〇〇〇F, with an accuracy of 50° to 2〇〇〇t: plus or minus 1.5°C, and band edge temperature measurement system The application date is July 2, 2002, as described in the U.S. Patent Application Serial No. 10/168,544, the entire disclosure of which is incorporated herein by reference. Referring again to Figure 17', the heat treatment system 1210 further includes a temperature controlled heat treatment chamber 1211 maintained at a selected temperature. For example, a hot wall surface heating element 1283 can be coupled to the hot wall surface brewing control unit 1281, and the hot wall surface heating element 1283 can be specifically formed to connect the secret chamber 11n. The heating element may be, for example, a resistive heater element comprising, for example, a crane, a &lt; chrome alloy, an aluminum-iron alloy, an aluminum nitride, etc., such as a filament factory = when a current flows through the lin, the god is dissipated as heat, and therefore, the contact temperature control The single port 1281 can include, for example, a controllable DC power supply. For example, the &amp; surface heating element 1283 can contain a singer from the lion (four) public a1 (131 () Ki ^ si ^ d

Dr.’ Batavia, IL, 60510) obtained at least one Firer〇d collet and cried. Alternatively, or in addition, a cooling element may be employed in the heat treatment chamber 1211. The temperature of the heat chamber mu can be controlled by using, for example, a thermocouple (for example, a κ type thermocouple, a pt pair:,, a soil surface μ degree control unit 1281) to control the temperature of the heat treatment chamber u. 15 and 17 ^ The processing system 1210 further includes an upper switch assembly 1284 that can include, for example, a gas injection system for introducing a blow-off body, a process roll, or a purge gas into the heat treatment chamber 1211. Referring again to the ® 17, the heat treatment system 1210 can further comprise a temperature selected at a temperature of 54 1283024. For example, the upper component heating element (3) 5 is transported to an upper component temperature control unit 1286, and the upper 1285 can be frequencyd. Formed to control the temperature of the upper component 1284., ", yak, etc., such as S containing, for example, tungsten, nickel-chromium alloy, aluminum-iron alloy, nitriding, such as filament. Commercially available manufacturing resistance plus; Examples of the material 包含 include Kantha 〇 〇, 〇 〇, ^thel, = the registered trademark name of the metal alloy manufactured by Kanthal Company, =. The smuggling contains ferrite alloy ((10) 咐, and Chiru (4) The family contains austenite &amp; gold (NiCr, N iCrFe). When current flows through the filament, the power is dissipated as heat.

Therefore, the 'upper component temperature control unit can, for example, contain - control = section 2. For example, the upper miscellaneous piece airfoil 1285 can include a double interval lycopene rubber heater (1 〇 厚 厚 厚) having a power density of just w 5 W/m. The temperature of the upper group ί 1284 can be monitored by using a temperature sensing device such as a thermocouple (e.g., a κ type thermocouple, a Pt sensor, etc.). Again, the controller can utilize temperature measurement as feedback to the upper component temperature control unit 1286 to control the temperature of the upper = 1284. In an alternate embodiment, the upper component 1284 can comprise a radiant heater, such as one of an array of tungsten halogen tubes. Upper assembly 1284 can be included with or otherwise include a cooling element.

Referring again to Figures 15 and 17, the heat treatment system 121 further includes a substrate lifter assembly 1290. The substrate lifting rod assembly 1290 is specifically formed to lower a substrate 1242 to an upper surface of the substrate supporting portion 1270, and lift a substrate 1242" from an upper surface of the substrate supporting portion 70 to a supporting plane, or therebetween One of the transfer planes. At the transfer plane, the substrate 1242" can be exchanged with a transport system that is utilized to transport the substrate in and out of the chemistry and heat treatment capacity to 1221, 1211. In the support plane, the substrate 1242" can be cooled while the other substrate is exchanged between the delivery system and the chemical and thermal processing chambers 1221, 1211. Still referring to Figures 15 and 17, the thermal processing system 1210 further includes a vacuum pumping system 1280 The vacuum pumping system 1280 can include a vacuum pump and a throttle valve such as a gate valve or a butterfly valve. The vacuum pump can include an i-round molecular vacuum of $ 129,830,24 per second (and greater than) of 129 830,24. TMp is useful for machining (generally small 'mT〇rr). For high pressure machining (ie, greater than 100 mTorr) and t, a mechanical pressurizing pump and a dry low vacuum pump can be used. Referring again to the figure, the heat treatment system 1210 can further contain a controller 1275, beans

Ίί 二微处理11, memory, and -digit 1/() are enough to generate enough to pass and start the input to the Chengri system 121 (m and monitor from the heat treatment system 121Q

Control voltage. In addition, the controller 1275 can be coupled to the substrate support temperature control unit 1278" upper assembly temperature control unit 1286, upper assembly 1284, hot wall temperature control unit 1281, vacuum pumping system, system 1280, and substrate lifter assembly 12, and Exchange information with them. For example, it can be based on one of the methods stored in the memory. - The process recipe starts the above-mentioned components of the record to Wei 121 (). One of the g controllers 1275 is a DELL pREasi〇N w〇rkstati() n 610 available from Dell Corporation of Austin, Texas. In the alternative embodiment, the controls n 1235 and 1275 may be the same controller 0. In addition, the heat treatment system 1210 further includes a substrate detection system (not shown) to confirm whether the substrate is in the support plane. The substrate_system can include, for example, a Keyence (headquarters in Osaka, Japan) digital laser sensor.

Although the above is only a detailed description of the daily development of some real orchids, it is easy for those skilled in the art to _(4), in the case of non-essential _ the teaching and advantages of the invention, it is possible in this example. Make most changes. Accordingly, all such modifications are intended to be included within the scope of the present invention. BRIEF DESCRIPTION OF THE DRAWINGS FIG. 1 is a block diagram showing an exemplary processing system according to an embodiment of the present invention; FIG. 2 is a flowchart showing an exemplary operation method of a processing system according to an embodiment of the present invention. Figure 3 shows an exemplary view of Trimming Measurement in accordance with one embodiment of the present invention; 56 1283024 Figure 4 shows an exemplary view of a formulation in accordance with one embodiment of the present invention; Figure 5 shows an illustration in accordance with the present invention. An exemplary view of a simple box algorithm of an embodiment; FIG. 6 shows an exemplary view of a recipe range screen in accordance with an embodiment of the present invention; FIG. 7 shows an exemplary view of a recipe screen controlled in accordance with one embodiment of the present invention. Figure 8 shows an exemplary view of a control strategy screen in accordance with one embodiment of the present invention; Figures 9A-9C show an exemplary view of a control meter screen in accordance with one embodiment of the present invention; 1 is an illustration of a box screen display; FIG. 11 shows an exemplary view of a control state screen in accordance with one embodiment of the present invention; 1 is an illustration of a state screen of one of the embodiments; FIG. 13 is a diagram showing an exemplary configuration of a screen in accordance with an embodiment of the present invention; FIG. 14 shows a data collection group according to an embodiment of the present invention. FIG. 15 is a schematic cross-sectional view of a processing system according to an embodiment of the present invention. FIG. 16 is a schematic cross-sectional view of a chemical processing system according to an embodiment of the present invention; 17 shows a schematic cross-sectional view and a plan view of a heat treatment system according to an embodiment of the present invention. FIG. 18 shows a schematic cross-sectional view of a gas distribution secret according to an embodiment of the present invention: 57 1283024 100~ processing system 102~ Start event 1 〇 4 ~ wafer out event 110 ~ manufacturing equipment system (MES) 112 ~ client workstation 120 ~ tool layer (TL) controller 122 ~ database 130 ~ force tool 132 ~ An integrated measurement module (IMM)

134~second IMM 150~processing subsystem 152~first buffer module 154~chemical oxide removal (C0R) module 156~post heat treatment (pHT) chamber 158~different buffer module 190~R2R The controller 192~the link 194~the link 200~the program 210~ receives the pre-processing measurement data and defines a substrate input state 215~ determines the desired state of the substrate 220~ determines a desired process result 225~ decides one Process recipe 230~ processing the substrate 235~ receiving the processed measurement data and defining an output state of one of the substrates 240~ comparing the processed measurement data with the pre-process measurement data 245~ Is the process completed? 250~End 1200~System 58 1283024 1210~Heat treatment system 1210'~Healing system 1211~Heat treatment chamber 1220~Chemical treatment system 1221~Chemical treatment chamber 1230~Insulation assembly 1231~Secondary insulation assembly 1235~Controller 1240~Substrate Support portion 1242~substrate 1242'~substrate 1242"~substrate 1244~substrate support part assembly 1250~vacuum pumping system 1252~vacuum pump 1254~gate valve 1260~gas distribution system 1262~process space 1266~wall heating element 1267~gas distribution heating Element 1268~wall surface temperature control unit 1269~gas distribution system temperature control unit 1270~substrate support unit 1272~fixed base 1274~thermal barrier 1275~controller 1276~heating element 1278~substrate support temperature control unit 1280~vacuum pumping System 59 1283024 1281 ~ hot wall surface temperature control unit 1283 ~ hot wall surface heating element 1284 ~ upper part 1285 ~ upper part heating element 1286 ~ upper part temperature control unit 1290 ~ lifting rod assembly 1294 ~ common opening 1296 ~ gate valve assembly 1298 ~ opening Port 1422 ~ gas distribution component 142 4~ element 1426~ element 1428~ element 1430~first gas distribution plate 1432~second gas distribution plate 1440~first gas distribution inflation chamber 1442~second gas distribution inflation chamber 1444~hole 1446~channel 1448~hole

Claims (1)

1283024 X. Patent application scope: 1 · A substrate processing method by chemical oxide removal, which is processed by chemical oxide removal (COR) to process a substrate, comprising the following steps: eight straws are determined by the chemical year a desired state of the substrate, wherein the desired state includes at least one target critical dimension (CD); receiving pre-process measurement data of the substrate, wherein the pre-process measurement data defines an input state of the wafer and includes pre-processed CD data; Determining a process recipe by comparing the input state with the desired state; and processing the substrate by using the process recipe by chemically modifying a plurality of exposed surface layers on the substrate, and then heat treating the substrate Chemically change the surface layer of the ginseng. 2. The method for processing a substrate by chemical oxide removal according to claim 1 of the patent application, further comprising the steps of: • receiving post-processing measurement data of the substrate, wherein the processed measurement data defines an output state and A CD material comprising a processed substrate; determining whether the desired state has been achieved; , determining a new process recipe when the desired state is not achieved; and transmitting the substrate when the desired state has been achieved. 3. The substrate processing method by chemical oxide removal according to item 1 of the patent application scope, wherein the pre-processing measurement data comprises optical digital contour detection (〇Dp) data. 4. The method of substrate processing by chemical oxide removal according to item 1 of the patent application scope, wherein the post-processing measurement data comprises optical digital contour detection (〇Dp) data. 5. The method of substrate processing by chemical oxide removal according to item 4 of the patent application scope, wherein the post-process measurement data comprises scanning electron microscope (SEM) data. 6. The substrate processing by chemical oxide removal according to item 1 of the patent application scope, = the pre-processing measurement data contains at least one CD to be controlled, and the private recipe is compared by At least one of the desired CDs is determined by the target CD. 7. The substrate processing method of claim 6, wherein the at least one desired control CD is larger than the target CD, and the processing 61 1283024 comprises performing a finishing process. Please refer to the seventh method of substrate processing by chemical oxide removal. The finishing process includes: for - ° ^ view - chemical oxidizer division ((7) R) process recipe, ^ on the substrate The plurality of exposed surfaces are stored by the chemical enthalpy for the hearing gas and the solid reaction product is formed on at least the exposed surface, and the sputum is performed by the solid reaction product level The group uses the -processing (ΡΗΤ) noodle side, which has been chemically treated by the peak, and the substrate is processed by the chemical oxide removal method, and the following steps are included:兮ί f^c〇R The execution of the process recipe and the execution of the PHT process recipe, until the desired CD is approximately equal to the target cd. Method 9 is the substrate processing state of the chemical oxide removed and the data defines an output shape to determine whether the CD measured by the quantity is approximately equal to the target CD; and the music is repeated when the tCD is not approximately equal to the target CD. The execution of the 〇R formula and the execution of the PHT process recipe and the hunting are performed by the _reaction generation_plating. 酣The module is then heat treated. 62 1283024 Purely _«Out of the surface The substrate plus the premise of her (four), her side has a pre-requisite; her ^ by chemical oxide removal of the substrate plus ii a crack box table 'each box contains - a predetermined trim value; Ϊ́ί is approximately equal to one of the pre-determined trim values of the difference between the pre-CD data and the target CD; and the pre-qualified control recipe associated with the A-box as the process recipe. The processing of the substrate by chemical oxide removal in item 11 of the worksheet is further included in the following steps: establishing a checklist containing one of the recipes; and performing a lookup action to determine the recipe of the process. Fang, this patent _ ¥ 8 is processed by the chemical oxide removal substrate, and the second step of executing a COR process recipe includes: transferring the substrate into a module containing a scale processing chamber; The substrate is disposed in a temperature control substrate supporting pressure installed in the chemical processing chamber, and the chamber is changed by a vacuum reduction method connected to the chemical processing chamber to be connected to the chemical processing chamber. And a gas distribution line for introducing the processing gas to the chemical supply line; and a straight-distribution wire control lion C°R·, the temperature control wire support portion, the second-rolling system, and The gas distribution system. 63 1283024 = method, wherein the pressure of the chemical treatment chamber ranges from about lmT to a maximum of 100 mTorr 〇 25 · The substrate addition method by chemical oxide removal as in the ls of the patent application § Step: controlling the temperature of the process gas in the gas distribution system to be in a range from about 30 ° C to about i ° ° c. 26. The substrate for chemical oxide removal according to claim 15 of claim 15 includes the following steps: controlling the temperature of the wall of the chemical treatment chamber from about 30 C to about 1 〇 (one of the TC ranges) The substrate of claim 16 is a substrate for chemical oxide removal, wherein the temperature of the substrate support portion in the heat treatment chamber ranges from about 10 C to about 50 ° C. The substrate/electrode oxide-removed substrate of item 16 has a /JDL degree of the substrate mounted on the temperature-controlled substrate support portion in the heat treatment chamber ranging from about to about 5 Å. Item 16 of the substrate for chemical oxide removal, the pressure range of the heat treatment chamber is from about 1 mTorr to about 100 mTorr, and the substrate is removed by chemical oxide removal. The temperature range of the processing chamber is from about 10 ° C to about 50. The substrate processing method by chemical oxide removal in item 16 of the 〇 range includes the following steps: · The substrate is disposed at a distance from the upper portion of the temperature control During the period of 4 days, the substrate is placed at a distance from the upper part of the temperature control unit. The processing of the substrate by chemical oxide removal in item 16 of the work area includes the following steps: ^ The temperature of each chamber wall is controlled from about 3G ° C to about 1 ° ° C 65 1283024 method, wherein the addition of 1 pre-denier f by chemical oxide removal of the substrate processing edge CD information and about: 2:2? Containing at least one of the insulating features is determined by comparing the nested CD data of the feature, the edge feature, and the process is assigned. 〇&gt; material and the nested® data and The method of the target CD is to complete the method, including the difference between the substrate of the pure oxygen (10) and the cd data of the target cd data, and the implementation - the second repair set and the target # The difference between the cd data, the execution-the work method, the 33-by-substrate addition by the chemical oxygen recording, the difference between the data and the target cd data, and the determination of the data from the target 3 The difference between the CD data, the process t ^ "the number of reading the second variable increment of the riding difference, execution - trimming Method, &amp;! age of chemical oxide removal of substrate feed. Λ Then the measured data contains the appropriateness (GOF) data and depth method 3,7? Bao Shen == the first item by chemical oxidation Process removal substrate processing - process definition and process model, calculation of wafer - predictive performance · reach; = = prediction state has been compared by comparing the output state with the prediction state i 12 1283024 When the predicted state is not achieved, a process mode compensation is calculated. The substrate processing method of the chemical material removal according to Item 1 of the patent scope, wherein the process recipe is performed by an execution-control strategy and a The control plan determines. Soil 39. For example, the substrate processing method of chemical oxide removal according to item 8 of the material range includes the following steps: transferring the substrate from the COR mold to the pht module. 40. A processing system for processing a substrate, comprising: a windshield I force system comprising: a chemical oxidation removal (CC) R) module for deuteration = a plurality of exposed surface layers on the substrate; - post heat treatment (PHT) mode The chemically altered surface layer on the substrate; and a first, a rim, and a member connected between the pHT module and the c〇R module; (4) ^ If the measurement module (IMM), which is connected to the processing subsystem and system for extracting the pre-processing measurement data of one input and one of the bauxite plates; and the Z-control, which is connected to the processing subsystem and The first defect, wherein the device is used to change the wafer from the input state to a process recipe of a desired state, and the process recipe is executed. The invention relates to a processing system for processing a substrate according to item 40, wherein the method further comprises: a temperature-controlled chemical processing chamber; and a temperature-controlled substrate supporting portion; The processing chamber is designed to be substantially connected to the chemical processing chamber and the pumping system, and is connected to the chemical processing chamber; and the temperature control body is equipped with money for processing one or more kinds of treatments The gas is introduced to the processing substrate of the chemical treatment process ΡΗτίΐ^利面4G item, which is the secret of the temperature control sugar-filled room; the Wenxian plate support part, 孰," Ligu indoor and designed to use In connection with the heat treatment chamber, a vacuum extraction system is connected to the heat treatment chamber. The processing system for the processing substrate of the fourth patent item of the F patent range, wherein the #配季\先、,^3 is used for controlling—the chemical treatment chamber temperature, the chemical treatment gas ^ m — the chemical treatment substrate support temperature The means for chemically treating the substrate temperature 1, 67 1283024, the processing pressure, a chemical processing gas flow rate, a heat treatment chamber, the substrate support temperature, the heat treatment substrate temperature, and a heat treatment pressure. The processing system for processing a substrate according to claim 40, wherein the absolute, the, and the enthalpy comprise at least one of a heat insulating component, a gate valve component, and a conveying system. A system for processing a substrate of 41, wherein the temperature is processed to treat the valley to include a wall heating element. The processing system for processing a substrate of claim 41, wherein the temperature system comprises at least a gas distribution plate comprising one or more gas injection holes. Fresh, a processing system for processing substrates of $41, wherein the temperature control substrate support portion includes an electrostatic clamping system, a back rolling body 7, a system, and one or more temperature controls At least one of the components. The processing system for processing a substrate according to item 41 of the patent, wherein the temperature control substrate supporting portion of the second portion to the middle includes one or more processing systems for processing the substrate of the temperature control element No. 41, wherein The gas-first gas distribution plenum and the first gas distribution plate, eight/, one or more holes of an array and one or more arrays of one or more body distribution plates of a second array - Or a plurality of holes, , = _ into the process space; and - a second gas distribution plenum and a t-share f, having a plurality of channels therein for accommodating the plate through the second gas The channel and the second one of the i-th body distribution plate or the evening hole couple the second gas to the process space. 〆/基0·”1# Patent scope 49th processing substrate processing system, wherein the first gas biliary ^, δ hai first gas system is independently introduced into the system 5 == profit range item 42 treatment = The force 1 system, wherein the two i: and the substrate lifting rod assembly connected to the heat treatment chamber are used to directly translate the substrate on the non-substrate support portion. 68 1283024 52. Item 40. The processing system for processing a substrate, wherein the processing subsystem is coupled to a manufacturing system. 53. The processing system for processing a substrate according to claim 40, wherein the control device determines whether the desired state has been Achieved. XI, schema: 69