1278370 玖、發明說明： [相關專利申請案參考] 本申請案是在2 000年8月30日提出申請且名稱為"Methods and Apparatus for Removing Conductive Material from a Microelectronic Substrate"的美國專利序號第 09/888,084 案 ，在200 1年6月21日提出申請且名稱為"Methods and Apparatus for Electrical, Mechanical and/or Chemical Removal of Conductive Material from a Microelectronic1278370 玖, Invention Description: [Related patent application reference] This application is filed on August 30, 2000, and the name is "Methods and Apparatus for Removing Conductive Material from a Microelectronic Substrate" /888,084, filed on June 21, 2001 with the name "Methods and Apparatus for Electrical, Mechanical and/or Chemical Removal of Conductive Material from a Microelectronic
Substrate”的美國專利序號第09/887,767案，以及在200 1年6 月 21 日提出申請且名稱為"Microelectronic Substrate Having Conductive Material With Blunt-Cornered Apparatus, andU.S. Patent No. 09/887,767 to Substrate, and filed on June 21, 2001, under the name "Microelectronic Substrate Having Conductive Material With Blunt-Cornered Apparatus, and
Associated Methods for Removing Conductive Material"的美 國專利序號第09/65 案的延續案，所有這些申請案在此 以引述的方式併入本案夺考。 [技術領域] 以下所抽示的内容是有關於使用電化學機械處理法對微 電子工件進行電鍍處理以及從微電子工件去除掉材料的方 法以及装置° [先前技與] 微電子工件通常包括一基板，該基板具有複數個組件， 比如記憶胞’是互連到導電線上以及其它特點上。可以藉 工件内所形成溝槽或其它凹洞來形成該導電線，然後將導 電材料或其^化合物沉積到溝槽内。導電材料的過度負荷 是溝槽上的部分導電材料，接著會被去除掉，而在溝槽内 84057 12783,70 留下獨立的導電材料線。 已經使用電化學處理决> , i里來/儿和亚去除掉金屬層。一般的兩 化子電處理牽涉到使用化學 ^ rpvnw、甘、、 卞虱相/儿和（cVD)，物理氣相沉積 )或，、匕通當万法，在工件表面上沉積出晶種層。形成 晶種層後，在有電處理溶液(比如電解液)時，施加 氣電鍍電壓到晶種層金心打士 μ 、弘極（間，而將金屬地毯層或 層電鍍到工件上。對於大多數金屬來說，陰極是輕合到晶 種層’而陽極是浸泡到電處理溶液中，以便在晶種層與陽 極之間建立電場。 也已經使用電處理技術從微電子工件上去除掉金屬層。 例如’陽極可以耦合到工件上的金屬$，而陰極可以浸泡 到電解質巾，以便從工件表面上去除掉金屬。另一實例中 ，可以將父流電經由電解質施加到導電層，以去除掉金屬 邛刀例如，圖1頭不出使用交流電去除掉金屬的傳統裝置 6〇，琢傳統裝置60包括耦合到電流源21的一第一電極2〇a與 一第二電極20b。該第一電極2〇a是直接貼附到半導體基板τ 〇 的金屬層1 1上，而第二電極2〇b是部分浸泡到配置於金屬層 11表面上的液態電解質3 1中。例如，第二電極2〇b可以向下 移動，直到接觸到電解質31為止。障壁層22保護第一電極 2 0 a免於直接接觸到電解質3丨。電流源2丨經由第一電極2 〇 a 、第二電極20b以及電解質31，而施加交流電到基板10上， 以便從金屬層1 1上去除掉導電材料。該交流電信號可以具 有许多的波形’比如由Frankenthal等人在’’Electroetching of Platinum in the Titanium-Platinum-Gold Metallization on 84057 1278370The continuation of the US Patent Serial No. 09/65 of the Associated Methods for Removing Conductive Material", all of which are incorporated herein by reference. [Technical Field] The following is a description of a method and apparatus for electroplating a microelectronic workpiece using an electrochemical mechanical treatment method and removing material from the microelectronic workpiece. [Previous techniques and] Microelectronic workpieces usually include a A substrate having a plurality of components, such as a memory cell, being interconnected to a conductive line and other features. The conductive line may be formed by a trench or other recess formed in the workpiece, and then a conductive material or a compound thereof is deposited into the trench. Excessive loading of the conductive material is a portion of the conductive material on the trench that is subsequently removed, leaving a separate line of conductive material in the trench 84057 12783,70. The electrochemical treatment has been used to remove the metal layer. The general electrochemical treatment involves the deposition of a seed layer on the surface of the workpiece using chemical ^ rpvnw, gan, 卞虱 phase/child and (cVD), physical vapor deposition or 匕. After forming the seed layer, when there is an electric treatment solution (such as an electrolyte), a gas plating voltage is applied to the seed layer, the gold core, and the metal layer or layer is plated onto the workpiece. For most metals, the cathode is lightly bonded to the seed layer' and the anode is immersed in an electrical treatment solution to establish an electric field between the seed layer and the anode. It has also been removed from the microelectronic workpiece using electrical processing techniques. a metal layer. For example, 'the anode can be coupled to the metal $ on the workpiece, and the cathode can be immersed in the electrolyte towel to remove the metal from the surface of the workpiece. In another example, the parent current can be applied to the conductive layer via the electrolyte to Removing the metal file, for example, Figure 1 shows a conventional device 6 that removes metal using an alternating current. The conventional device 60 includes a first electrode 2a and a second electrode 20b coupled to the current source 21. One electrode 2A is directly attached to the metal layer 11 of the semiconductor substrate τ, and the second electrode 2〇b is partially immersed in the liquid electrolyte 31 disposed on the surface of the metal layer 11. For example, the second The pole 2〇b can be moved downward until it contacts the electrolyte 31. The barrier layer 22 protects the first electrode 20a from direct contact with the electrolyte 3. The current source 2丨 passes through the first electrode 2 〇a , the second electrode 20b and electrolyte 31, and alternating current is applied to substrate 10 to remove conductive material from metal layer 11. The alternating current signal can have many waveforms, such as by Frankenthal et al. in ''Electroetching of Platinum in the Titanium- Platinum-Gold Metallization on 84057 1278370
Silicon Integrated Circuits’·（Bell Laboratories)中所揭示的 ，在此原封不動的當作參考資料。 圖】所示系統的缺點是，在第一電極20a貼附到基板】〇的區 域内，是無法從導電層1 1上去除掉材料，因為在該區域内 ，障壁層22會避免電解質3 1接觸到基板1 〇。另一方式是， 如果第一電極20a是接觸到電解質的可消耗電極，則電解處 理會讓第一電極20a變差。另一缺點是，電解處理不會均勻 的從基板10上去除掉材料。例如，在導電層u内會發展出 沒有直接以電氣方式連接到第—電極2Ga(比如孤島）的殘留 導電材料的獨立區域。殘留導電材料的獨立區域會干擾到 導電線的形成及/或搡作，並且很難用電解處理來去除掉這 種殘留材料，除非第—電極W被重新定位_合到這些"孤島,, 減輕某些前述缺點的方法是，將複數個第一電極2〇a貼附 到基板的周邊附近，以增加去除掉導電材料的均句性。 然而’殘留導電材料的獨立區域仍會留下，雖然有额外數 目的電極接觸至||其4 、 一而 土 。另一万法是從惰性材料中形成第 這Li更道第：電極Mb’使得障壁層22不再有需要。雖然 除掉道11的區域接觸到電解質31，但是對於去 有 仏惰性電極並不像反應電極(亦即消耗電極) :政。結果，惰性電極仍會在基板1。上留下殘餘的導電材 其中二基板1 0被 一電極20a貼附到 、圖顯示減輕某些上述缺點的另一 P刀/又’包到含有電解質3 1的容器3 〇内 84057 1278370 一基板]〇，而第二電極20b則貼附到另一基板1〇。該方法的 優點是，第一電極2〇a與第二電極2〇b不會接觸到電解質。然 而$ %材料的孤島仍會在電解處理後留下，而且很難從 第私知2 2〇a與第二電極2Ob貼附到基板丨〇的地方去除掉導 電材料。 國際專利申請案PCT/US00/08336(w〇/00/59682)揭示出 種/、有第—反應罜以及第二反應室的裝置，該第一反應 室將導電材料應用到半導體晶m反應室則藉由 電:磨或化學機械研磨法從半導體晶圓上去除掉導電材料 第:反應至包括一陽極，該陽極具有一油漆滾筒組件， W油）、滾筒組件具有圓柱狀機械墊，當陽極與晶圓繞著垂 直減轉時，靖主狀機械塾會接觸到電解液槽與晶圓表 回k極可以包括與電解液槽絕緣開的導電液體，該陰極 是以電氣方式耦合5，丨曰圓、息P ’ 、」 j曰曰圓k線。該裝置的缺點也是會留下 殘餘的導電材料孤島到晶圓上。 學沉積機器，具有一第 •、子在的衣且疋揭露於美國專利編號第6，1 76,992 B1 木”主木由加川的Nut001所擁有。該專利案揭示出一種電化 研磨墊以及一第二電極 電極 ’該第-電極接觸到晶圓的處埋表面，該研磨墊嚷合住晶 圓處理表面的另一立八 々— 、 。刀而弟一電極是在研磨墊底下。電解 質穿過接觸到第—雷枋 ^ 2，罘一黾極以及晶圓表面的該研磨 墊。在電鍍循環期間， " 直 电會流過第一電極與第二電極 ，將金屬離子電鍍到曰 曰曰Q表面上。在去除電鍍/平坦化循環 期間，切換該直流雨 兒的極性，以便從晶圓上對金屬進行丟 84057 -10 - Ϊ278370 . 除電鍍處理，而研磨墊則磨擦晶圓的表面。 美國專利編號第6，1 76,992案所揭示裝置的憂慮是，去除 電鍍/平坦化循環在晶圓邊緣比在晶圓中心的去除材料還要 快。更特別的是，隨著去除電鍍/平坦化循環的進行，於越 晶圓的過多負載變得非常薄，使得晶圓邊緣與中心 生相當大的電壓降。比起晶圓中心，該電壓降造成更夕’ 料從晶圓邊緣上被去除電鍍掉。此外，直流電b 八 表面上形成鈍性層，讓電壓降變得更厲害。該" 、 豕對於處 理較大晶圓（比如300 mm)來說尤其會造成問題，因 圓的較大直徑產生較大的電壓降。因此，雲 一叩 而要|均勻的從 晶圓表面上去除掉材料。 [發明内容] 本發明是用以對微電子工件進行電機械化學處理的、、 與裝置。該用詞，，微電子工件"在全篇中是用來包括從==法 形成的工件，在該基板上及/或在該基板内製造出微電 路或許多其它組件（比如資料儲存單元、 电電 丘逑待性、電晶油As disclosed in Silicon Integrated Circuits' (Bell Laboratories), it is used as a reference here. A disadvantage of the system shown is that the material cannot be removed from the conductive layer 11 in the region where the first electrode 20a is attached to the substrate, because in this region, the barrier layer 22 avoids the electrolyte 3 1 Contact the substrate 1 〇. Alternatively, if the first electrode 20a is a consumable electrode that contacts the electrolyte, the electrolysis treatment may deteriorate the first electrode 20a. Another disadvantage is that the electrolytic treatment does not uniformly remove material from the substrate 10. For example, a separate region of the residual conductive material that is not directly electrically connected to the first electrode 2Ga (e.g., island) may be developed in the conductive layer u. Separate regions of residual conductive material can interfere with the formation and/or fabrication of conductive lines, and it is difficult to remove such residual material by electrolytic treatment unless the first electrode W is repositioned to these "islands, A method for alleviating some of the aforementioned disadvantages is to attach a plurality of first electrodes 2A to the vicinity of the periphery of the substrate to increase the uniformity of the conductive material removed. However, the separate areas of the residual conductive material will remain, although there are additional numbers of electrodes in contact with ||4, 4, and 1 . Another 10,000 method is to form the first Li from the inert material: the electrode Mb' makes the barrier layer 22 unnecessary. Although the area except the track 11 is in contact with the electrolyte 31, it is not like the reaction electrode (i.e., the consumption electrode) for the de-inert electrode. As a result, the inert electrode will still be on the substrate 1. A residual conductive material is left on which the two substrates 10 are attached by an electrode 20a, and the other P-knife which is used to alleviate some of the above disadvantages is packaged into the container 3 containing the electrolyte 3 1 840 8 457 1278370 a substrate ], and the second electrode 20b is attached to the other substrate 1〇. The advantage of this method is that the first electrode 2a and the second electrode 2b do not come into contact with the electrolyte. However, the island of $% material remains after the electrolytic treatment, and it is difficult to remove the conductive material from the place where the second electrode 2Ob and the second electrode 2Ob are attached to the substrate crucible. International Patent Application No. PCT/US00/08336 (w〇/00/59682) discloses a device having a first reaction chamber and a second reaction chamber, the first reaction chamber applying a conductive material to the semiconductor crystal m reaction chamber The conductive material is removed from the semiconductor wafer by electro-mechanical or chemical mechanical polishing. The reaction comprises: an anode having a paint roller assembly, the W-oil, and the roller assembly having a cylindrical mechanical pad as the anode When the wafer is vertically rotated around the wafer, the main mechanical device will contact the electrolyte bath and the wafer surface. The k-pole may include a conductive liquid insulated from the electrolyte bath. The cathode is electrically coupled 5,曰 round, interest P ', ” j曰曰 round k line. The disadvantage of this device is that it leaves a residual island of conductive material on the wafer. The deposition machine has a first and a second coat and is disclosed in U.S. Patent No. 6,1,76,992 B1. The main wood is owned by Nut001 of Kagawa. The patent discloses an electrochemical polishing pad and a second. Electrode electrode 'The first electrode contacts the buried surface of the wafer, and the polishing pad is joined to the other side of the wafer processing surface. The knife and the electrode are under the polishing pad. The electrolyte passes through the contact. To the first - Thunder ^ 2, the first pole and the surface of the wafer. During the plating cycle, " direct current will flow through the first electrode and the second electrode, and the metal ions are plated to the 曰曰曰Q On the surface, during the removal of the plating/flattening cycle, the polarity of the DC rain is switched to remove the metal from the wafer by 84057 -10 - Ϊ 278370. In addition to the plating process, the polishing pad rubs the surface of the wafer. The concern with the device disclosed in Patent No. 6,1,76,992 is that the removal of the plating/planarization cycle is faster at the edge of the wafer than at the center of the wafer. More specifically, with the removal of the plating/flattening cycle of The excess load on the wafer becomes very thin, causing a considerable voltage drop at the edge of the wafer and the center. This voltage drop causes the material to be removed from the edge of the wafer as compared to the center of the wafer. In addition, a blunt layer is formed on the surface of the DC b, which makes the voltage drop even more severe. This ", 豕 is especially problematic for handling larger wafers (such as 300 mm) due to the larger diameter of the circle. A large voltage drop is generated. Therefore, the cloud removes the material uniformly from the wafer surface. SUMMARY OF THE INVENTION The present invention is an electromechanical chemical treatment and apparatus for a microelectronic workpiece. The term "microelectronic workpiece" is used throughout the art to include a workpiece formed from the == method, on which the microcircuit or many other components (such as data storage units) are fabricated. , electric power, waiting for sex, electric crystal oil
及/或微機械單元等）。依據本發明電機械處理裝置纟、舍、A K 包括一件抓取器、一工件電極、第一 f ^6男、她例 逐％電極以及—/^一 遠端電極，該工件抓取器是用來接收—微電子工件y二二 工件被接收到該工件抓取器内時，該工 件。當該 到該工件的處理表面。該第一與第二 受觸 k嘀私極疋與工件 取器間隔開。該裝置也能包括_交流電源，一 t孤 第二遠端電極，交流電源以及直流電源上。在 及一切換組件。該切換組件是_合到工件電梓直2電源以 電極 一 罘—遠端 84057 -11 - 1278370 時’該切換组件將交流電源及/或直流電源上轉… :，第二遠端電極及/或第二遠端電極，用以電鍍，去“ 錢及/或以機械方式去除掉材料。 ’、兒 該裝置的不同實施例也包括—機械媒介，位於工 :與’弟-以及第二遠端電極之間。例％，該機械媒 #祕讨掘 以及由罘二電極承載的 罘二義械墊。在其它實施例中 哉械媒介包括由一旋轉Α 或固定桌台所承載的機械墊。機械媒介可以是在化二 研磨平坦化處理中使用的非磨擦型機械塾或固定磨：型： 械塾。 土、 在另一實施例中，該裝置進一步声枉一 括可私動返端電極 組件’該可移動遠端電極組件是與工件抓取器間隔開。第 -與第二遠端電極是由電極组件承載，而機械媒介包括由 第-遠端電極承載的第一研磨墊’以及由第二遠端電極承 載的第二研磨塾。該可移動電極組件能相對於工件抓取哭 而移動到⑷橫跨X件表面來磨擦卜與第二研磨塾，以: (b)將第-與第二遠端電極定位到相對於工件表面上的獨立 區域。 工件抓取器可以包括一基板承載器’該基板承載器具有 一抓取工件用的夾頭，使得該工件的處理表面朝上。在另 -實施例中，工件抓取器可以包括一耦合到基板承載器的 驅動組件，來移動該基板承載器，除了相對於工件來移動 戎第一與第二遠端電極以外，或是當作代替用。在另一實 施例中，工件電極是由工件抓取器承載，使得工件電極在 84057 -12 - 1278370 該工件被抓取器接收時，會接觸到工件處理表面上的晶種 層或另一型的薄層。 另一實施例中，該裝置包括一耦合到切換組件的控制器 。該控制器包括一電腦，該電腦具有一電腦可操作媒介， 該電腦可操作媒介包含許多指令，以操作該切換組件，用 以控制將直流電，交流電及/或機械磨擦施加到工件上。更 特別的是，在整個處理循環中，該控制器會同時或在獨立 時段内讓切換組件將直流電，交流電及/或機械媒介施加到 工件上，而從工件的處理表面上進行電鍍，去除電鍍及/或 機械式去除掉材料。電腦可操作媒介所執行方法的實施例 包括讓工件處理表面接觸到電解液，並將直流電施加到工 件電極以及至少第一遠端電極上。在該實施例中，工件電 極與第一遠端電極在電解質中產生電場。該方法的實施例 進一步包括將交流電施加到第一遠端電極與第二遠端電極 ，而直流電被施加到工件電極上，或是在終止掉直流電後 。該方法進一步包括讓工件處理表面接觸到機械媒介，至 少將交流電施加到第一與第二遠端電極。 本發明也包括許多額外的或不同方法的實施例，用以對 該工件進行電化學處理及/或機械處理。在其中一實施例中 ，直流電在獨立電鍍階段中被加到工件電極以及第一遠端 電極上，然後只有交流電被加到第一與第二遠端電極上， 而讓機械媒介在獨立的去除電鍍/平坦化階段中磨擦到工件 處理表面。因此在本特定的實施例中，在電鍍階段結束時 而且在去除電鍍/平坦化階段之前，直流電會終止。另一實 84057 -13 - 1278370 施例包括讓機械媒介磨擦到工件虔 加到工件電極以及第—遠端電極二將直流電施 流電被加到工件電極以及第—^ 貝她例中直 ^ . 5|[ —义、 仁上，而同時將交流電 罘與弟一适端電極並同時讓機;^甘 。卜卜从上、、、、 〒表钱械媒介磨擦該工件 卜’ “施加X Ά電而從工件中所壁a ^ ^ α| ^ Τ坏、疋的區域上去除掉 :材料時’帛一與第二遠端電極在工件獨立區域上的停 留時間會有變化。例如，在且有 曰n e。 在，、百車乂厗過多負載之導電材料 曰曰：：品域上，第一與第二遠端辛 〜丨丁田時間會增加，以 便更均勻的去除掉該過多的負載。 [實施方式] ^發明内容是說明在製造半導體裝置、微機械裝置以及 /、匕土式农1時所使用到的微電子工件，從該微電子工件 上。去除掉材料的許多方法與裝置。在以下的說明中以及在 圖0 7中，楗出本發明某些實施例的許多特定細節，以便提 供_實施例的全面性了㈣而，熟知該技術領域的 ^ 士知會了解到’本發明可以具有額外的實施例，或是本 &月可以在不用底下所說明之許多特定細節下來實現。 。圖” V、示出依據本發明實施例用以處理微電子工件1 1 〇之 私化卞機械（ECM)裝置100的實施例。；ECM裝置1⑼可以用來 將材料表面層1 Π電鍍到工件1 10的處理表面1 13上。ECM裝 置〇可以使用不同組合的直流電源、交流電源以及機械磨 ^以便在工件1 1 0上形成導電線或其它特性。 ECM裝置〗〇〇包括一工件抓取器12Q，用來接收工件11〇並 抓引所而的位置上。工件抓取器1 20可以包栝/基板承載器 84057 1278370 1 2 1，該基板承載器1 2 1具有會抓住工件1 1 〇的夹頭，使得處 理表面Π 3能面朝上或面朝下。在圖3所示的實施例中，工 件抓取器1 2 0是一基板承載益1 2 1 ’該基板承載器1 2 1具有會 抓住工件11 0的夾頭’使得處理表面Π 3能面朝上。工件抓 取器1 2 0可以是固定式的’將工件1 1 〇抓取到到固定位置上 ’或是可以耦合到一驅動系統1 22，來轉動或移動工件π 〇 (用箭頭Α與Β表示）。 ECM裝置100也包括 工件抓取器120内時’用來接觸到工件110的處理表面U3。 工件抓取為1 2 0也承載工件電極1 3 〇。在另一實施例中，工件 電極130可以由與工件抓取器12〇分隔開的支撐架（未顧示） 來承載。工件電極13G可以是―環形接觸點或複數個接觸點 ，接觸到工件110的邊緣。提供電流給材料表面層丨丨1用的 許多通當工件電極’在電化學電鍍技術中是已知的。一般 工件電極130是由金屬構成’該金屬可以浸泡到電化惠處理 樹或塗上電化學處理溶液。操作時，工件電極二提供 ，％極性或陰極性電荷給工件11〇上的材料表面層⑴ 特足的處理與應用而定。 ECM裝置1〇〇能進一步包括泰 仿/、工仟私極lj()分隔開的 電極組件1 4 0。在f施例申 ^ 在/、她例中，逆端電極組件U〇具有 f4:=42’是由電極承载器-支撑住。遠端電：组件And / or micromechanical units, etc.). The electromechanical processing apparatus according to the present invention includes a gripper, a workpiece electrode, a first f^6 male, a female % electrode, and a distal electrode, and the workpiece gripper is The workpiece is used to receive the microelectronic workpiece y when the workpiece is received into the workpiece gripper. When it comes to the processing surface of the workpiece. The first and second touched k嘀 private poles are spaced apart from the workpiece extractor. The device can also include an ac power source, a t-second remote electrode, an AC power source, and a DC power source. And a switch component. The switching component is _to the workpiece electric straight 2 power supply to the electrode one - the remote end 84057 -11 - 1278370 'the switching component will AC power and / or DC power up ... ..., the second remote electrode and / Or a second distal electrode for electroplating, to "money and / or mechanically remove material.", different embodiments of the device also include - mechanical media, located in the work: and 'di - and the second far Between the terminal electrodes, the mechanical media, and the mechanical media, which are carried by the second electrode, in other embodiments, the mechanical media includes a mechanical pad carried by a rotating or fixed table. The mechanical medium may be a non-abrasive mechanical or fixed mill used in the two-grinding planarization process: type: mechanically. In another embodiment, the device further includes a privately movable return electrode assembly. 'The movable distal electrode assembly is spaced apart from the workpiece gripper. The first and second distal electrodes are carried by the electrode assembly, and the mechanical medium includes the first polishing pad carried by the first distal electrode' and Second distal electrode carrying a second grinding crucible. The movable electrode assembly is movable relative to the workpiece to move to (4) rub the surface of the X member to rub the second polishing crucible to: (b) position the first and second distal electrodes To a separate area on the surface of the workpiece. The workpiece grabber can include a substrate carrier having a chuck for gripping the workpiece such that the processing surface of the workpiece faces upward. In another embodiment, The workpiece gripper can include a drive assembly coupled to the substrate carrier to move the substrate carrier, in addition to moving the first and second distal electrodes relative to the workpiece, or as an alternative. In an embodiment, the workpiece electrode is carried by the workpiece gripper such that the workpiece electrode contacts the seed layer or another thin layer on the workpiece processing surface when the workpiece is received by the gripper at 84057 -12 - 1278370 In another embodiment, the apparatus includes a controller coupled to the switching component. The controller includes a computer having a computer operable medium, the computer operable medium containing a plurality of instructions for operating The switching component is configured to control the application of direct current, alternating current and/or mechanical friction to the workpiece. More specifically, during the entire processing cycle, the controller allows the switching component to direct current, alternating current, and / or mechanical media is applied to the workpiece, electroplating from the treated surface of the workpiece, removal of electroplating and / or mechanical removal of the material. Embodiments of the method performed by the computer operable media include contacting the workpiece processing surface with the electrolyte, And applying a direct current to the workpiece electrode and at least the first distal electrode. In this embodiment, the workpiece electrode and the first distal electrode generate an electric field in the electrolyte. Embodiments of the method further include applying an alternating current to the first far The terminal electrode and the second distal electrode are applied to the workpiece electrode or after the DC power is terminated. The method further includes contacting the workpiece processing surface to the mechanical medium and applying at least alternating current to the first and second distal electrodes. The invention also includes embodiments of a number of additional or different methods for electrochemically and/or mechanically treating the workpiece. In one embodiment, direct current is applied to the workpiece electrode and the first distal electrode during an independent plating phase, and then only alternating current is applied to the first and second distal electrodes, allowing mechanical media to be removed independently. Rub into the workpiece handling surface during the plating/planarization phase. Thus in this particular embodiment, the direct current will terminate at the end of the electroplating phase and before the electroplating/planarization phase is removed. Another embodiment 84057 -13 - 1278370 includes a method of rubbing a mechanical medium to the workpiece 虔 to the workpiece electrode and a first-distal electrode 2 to apply a direct current to the workpiece electrode and the first to be straight. 5|[-Yi, Ren, while at the same time, the AC and the brother of a suitable electrode and at the same time let the machine; ^ Gan. Bu Bu from the upper,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,, The residence time with the second distal electrode on the separate area of the workpiece may vary. For example, there is a 曰ne. In,,,,,,,,,,,,,,,,,,,,,,,,, The second-end symplectic 丨 丨 丨 田 时间 time will increase to more evenly remove the excessive load. [Embodiment] The present invention describes the use of semiconductor devices, micro-mechanical devices, and/or The resulting microelectronic workpiece, from the microelectronic workpiece, a number of methods and apparatus for removing material. In the following description and in FIG. 7, a number of specific details of certain embodiments of the invention are presented to provide The versatility of the embodiments (4), and those skilled in the art will understand that the invention may have additional embodiments, or that this & month may be implemented without any of the specific details described below. V, shows According to the embodiment of the present invention according to Example 100 for processing a microelectronic workpiece 11 billion of the private Bian machine (ECM) apparatus. The ECM device 1 (9) can be used to plate the surface layer 1 of material onto the treated surface 1 13 of the workpiece 110. The ECM device can use different combinations of DC power, AC power, and mechanical grinding to form conductive lines or other features on the workpiece 110. The ECM device 〇〇 includes a workpiece grabber 12Q for receiving the workpiece 11 抓 and grasping it. The workpiece gripper 1 20 can be wrapped/substrate carrier 84057 1278370 1 2 1. The substrate carrier 1 2 1 has a collet that grips the workpiece 1 1 , so that the processing surface Π 3 can face up or face under. In the embodiment shown in FIG. 3, the workpiece gripper 120 is a substrate carrying benefit 1 2 1 'the substrate carrier 1 2 1 has a chuck that will grip the workpiece 110 so that the processing surface Π 3 can Face up. The workpiece gripper 120 can be a fixed 'catch the workpiece 1 1 to a fixed position' or can be coupled to a drive system 1 22 to rotate or move the workpiece π 〇 (with arrows Α and Β Express). The ECM device 100 also includes a processing surface U3 that is used to contact the workpiece 110 when in the workpiece gripper 120. The workpiece is captured as 1 2 0 and also carries the workpiece electrode 1 3 〇. In another embodiment, the workpiece electrode 130 can be carried by a support frame (not shown) that is separate from the workpiece gripper 12A. The workpiece electrode 13G may be an "annular contact point" or a plurality of contact points that contact the edge of the workpiece 110. Many of the common workpiece electrodes for providing current to the material surface layer 丨丨1 are known in electrochemical plating techniques. Typically, the workpiece electrode 130 is constructed of metal. The metal can be immersed in an electrochemical treatment tree or coated with an electrochemical treatment solution. In operation, the workpiece electrode 2 is provided, and the % polarity or cathodic charge is given to the material surface layer (1) on the workpiece 11 特 depending on the handling and application. The ECM device 1 can further include an electrode assembly 1 40 that is separated by a Thai imitation/worker pole lj(). In the example of the invention, the counter electrode assembly U〇 has f4:=42' which is supported by the electrode carrier. Remote power: component
1 4 0可以包括一栗一德被啦 iT 兒極142或複數個獨立的遠 〇在圖3所示的實施例中，旁α " 逐咏電極組件！ 40包括—笛—、土 端電極I42a’以及一第二遠端電極 逐 Θ罘—逐端電極 84057 -15 - 1278370 142b疋與第一遠端電極142&間隔開。遠端電極142也與工件 抓取叩1 20間隔開，使得遠端電極142在處理循環期間不會 接觸到材料表面層丨n。 运场包極組件1 4 0也包括一驅動組件1 4 6，讓電極1 4 2相對 万；工件1 1 〇做移動，用以控制電極的上升（用箭頭’，F，’表示）、 万疋轉（用箭頭’’G”表示）及/或平移（用箭頭”η”表示）。在其它實 犯例中，遠端電極組件丨4〇是固定式的，而且不一定要包括 驅動組件]46。當遠端電極組件14〇保持靜止時，與工件抓 取器120有關的驅動系統122能提供在工件n〇與電極“二之 間的相對移動。 ECM裝置1〇〇也包括在工件抓取器12〇與遠端電極142之 間的機械媒介1 5 0，用以機械式的磨擦該工件丨〗〇。在圖3所 示的特定實施例中，該機械媒介15〇包括一第一研磨墊i5h 與第一研磨塾B2b’該第一研磨塾152a貼附到第一遠端電 極142a的尾端，而第二研磨墊152b貼附到第二遠端電極“π 的尾端。該機械媒介1 50可以是沒有磨擦顆粒的非磨擦性單 元，或疋具有固定磨擦顆粒的磨擦單元。此外，該機械媒 介150可以具有一圖案表面，該圖案表面上具有獨立的上升 特性或溝槽，或者該圖案表面本質上可以是平面的。平坦 化研磨墊1 52a-b的表面可以定義出材料表面層u丨的軸承表 面153。能貼附到遠端電極142上的適當型式機械媒介15〇是 由St. Paul，Minnesota的3M公司以及公司 所製造。 工件抓取器120、工件電極130以及遠端電極組件丨4〇可以 84057 -16 - 1278370 含有電化學處理溶液161的容器i6。内。在另-二:列中，電化學處理溶請可以分散到工和。上， 塗到研戶叔、卞—化處理時’用來將平坦化溶液 '^上 < 分散裝置的並它刑六、哈卩此 例並不需要容請。電化：虎理 角。因此這些實施 體，复配方纟a a 予處理落液161可以是液體或膠 上或且成會將材料電鏟到工件⑴的材料表面層⑴ 可材:去除電鍍掉。例如，電化學處理溶㈣ 層n〗：屬：子以及通合將金屬離子電鍍到金屬表面 可以上广成份的電解液。例如，電化學處理溶液⑹ 表面層⑴上。 以…屬電鍍到金屬 ECIV[裝置1〇〇會電鍍’去 没夂/次如械式的從工件1 1 0 的至屬表面層⑴去除掉材料。工件電極13〇與至,丨、一 “ 電^2是電氣連接到電化學處理溶液，在工件^ = 任一逐端電極142之間有電壓時’使得電流流過金屬表面層 ⑴。在工件電極1 3G與第-遠端電極142a以及第二遠“極 丨42b之間有電壓時，獨立的電流也流過金屬表面層二因 此ECM裝置HH)包括-直流電源172、—交流電源^以及一 切換組件180。切換組件180耦合到工件電極p 私一 。υ ’遠端電極 1 42，直流電源1 72以及交流電源1 74。在护你 杜知作時，利用被選 取出的電極no與142組合’對工件m進行電鍍及心工件 110上去除掉材料’切換組件1δ〇會選擇性的輕合到直流電 源1 7 2及/或交 >瓦電源1 7 4，或脫離耦合。 E C Μ裝置1 〇 〇能進一步包括一控制哭1 9 〇，v 以便操作切換 84057 -17 - 1278370 =刚，該控制器19〇具有—電腦可操作媒介，該電腦可 :媒介包含有一些指令。控制器190也能以可操作的方式 禺合到直流電源m及交流電源174，以便調整施加到工 ::極no與遠端電極142上的電流電氣參數。電腦可操作 幻丨可以是軟體或硬體，⑷會造成操作切換組件副遠擇性 的將直流電源172及交流電源m輕合到被選取出的工件雷 極13。及/或遠端電極142組合，及/或㈨造成控制器灣機 械媒介壓到金屬表面層⑴的表面上。例如，控制哭内 的電腦可操作媒介包含有控制切換组件18〇，直流電源m ’父泥電源m，驅動組件146與驅動系統122的指令，以便 將材料電㈣金屬表面層⑴上及/或對金屬表面層⑴進行 去除電鍍/平坦化處理。 由包含在電腦可操作媒介内之指令所實現的奮施例方法 :包括獨.立的電鍍階段以及與電鍍階段分離開的獨立除電 鍍/平坦化階段。控制器19〇内的電腦可操作媒介藉讓工件 no的處理表面113接觸到電化學處理溶液⑹，並施加直流 電電2到工件電極130以及至少—遠端電極142上，來起始 化該實施例的電鍍階段。可以用溶液161填滿容器16〇，或 將該溶液⑹直接分散到金屬表面層⑴内，而讓工件ιι〇的 處理表面U3接觸到該溶液161。可以將工件電極!观合到 直流電源172的一端，並將一個或二個遠端電極142耦合到 直流電源172的另一端上’而將直流電施加到工件n〇上。 遠端電極⑷與工件電極130可以從交流電源174脫離辑合 ’使得只有直流電在該特定實施例的電鍍階段期間内會被 84057 -18 - 12783.70 施加到工件1 1 〇上。將金屦命 至屬电鍍到表面層n丨上的這些會施 例中，工件電極1 3 〇是降拓， 土 ^ v — 而运端電極142是陽極。狹而 ，可切換極性而電鍍出其它 ' 。刊种，使仔工件電極〗3〇是陽極 ，而运端電極142是陰極。 將足夠量的材料電鍍到砉 面層11 1上後，控制器】9〇内的 電腦可操作媒介藉讓直、、* + 1棺表罝机电源Π2從工件電極13〇與遠端 極142脫離耦合，來起始化去 、佘包鍍/平坦化階段。控制器1 90 也會讓（a)切換組件18〇將 、土山 行人机兒源174耦合到第一遠端電極 142a人罘一逐端電極〗42b ， 及/或（b)驅動組件146將研麼 墊152a-b的軸承表面153犀 ^ 土 表面層11 1的表面上。控制哭 190也能讓驅動組口口 , 、 及/或驅動系統122在工件11〇與電極 組件1 4 0之間產生的相對获金> 、， ， 、夕力’以便將研磨塾1 52a-b磨擦到 跨越表面層111的表面。 μ 在去除電/平彳卜W Μ + 十^化鳴段的貫施例中，將交流電施加到第 一返端電極142a與第-滂μ夺j % .. ^ 、弟—还项电極142b上，而機械媒介150則 …该表面。第-遠端電極142a與第二遠端電極⑷b之間 :父流電是要改變表面層⑴的表面，使得該表面層⑴ =變得更容易以機械方式去除掉。例如，該交流電會氧 化掉銘，銅或其它全屬士 屬的衣面而形成更容易被機械研磨掉 的^層。該交流電也會從某些表面層上去除電鍍掉材料 、結不’在去除電鍍/平坦化階段中，會因為在電化學處理 ^夜⑹以及表面層⑴之間因交流電所感應出來的電化學 ^互作用’以及因為機械媒介15Q所造成的機械磨擦，而從 面層111的表面上將材料去除掉。 84057 -19 - 1278370 包含在检制器190的電腦可操作媒介内之指令，由該指令 所實現的另 a、 、 一貫施例方法，包括將直流電施加到工件電極 以及施力口到签 t , a , , J弟一與弟二遠端電極中的至少一個，以及同時 將交流電施加到第一與第二遠端電極上，來同時進行電鍍 以及去除4鍍/平坦化。該實施例也能包括讓至少微電子工 件 或L鲕電極組件1 4 0做相互移動，而施加直流電以及交 心私以便处工件1 1 0的表面上，以便用機械方式將材料磨擦 掉。在孩實施例中，交流電可以很小於直流電，使得有效 的直流電會承載交流電。遠端電極組件140與工件11〇在處 理期間旎保持固定，或至少遠端電極組件1 40或工件1 1 〇能 相對於其它來移動，將遠端電極142定位到相對於表面層 1Π的表面。例如，遠端電極142在該工件110的被選定區域 上可^ 有幸乂長的停留時間，如底下更加詳細的解說。 控制器190的電腦彳操作媒介也能包含有i少在處理循 環的不同階段中，從表面層ln上機械式去除掉材料的指令 。例如，控制器190能命令驅動組件146將研磨墊152&吨的軸 承表面153壓到表面層1U上，而（a)將直流電施加到工件電 極130與遠端電極142上，以便將材料電鍍到工件上，（匕) 將交流電施加到第一遠端電極14^與第二遠端電極14孔上 ，或（c)沒有電流被施加到工件電極13〇，第一遠端電極Μ。 或第二遠端電極142b上。如此，只使用電化學處理溶液ΐ6ι 的化學以及機械媒介〗50的化學機械平坦化處理，能與在戋 不在有表面層1U的電氣處理下來進行。 本發明的另一實施例中，可以調整遠端電極組件的佟 84057 -20 - 1278370 田寺間，使忤遠端電極142被並列到處胃$ &，η， ^ , ^ 理表面113的第一區 或、，，二過一段與第二區域不同的時間。 Γ-τ中，當表*層⑴的厚度在::：邊=: 大時，電極組件140在邊緣比在中心可以具有較長的 v留時間，以便從工件上去除掉 、 丄\ 又夕何才十0電極組件140在 去除電鍍/平坦化階段中的停留時間，—般是比較厚之表r ::Π:工件上的區域還長。要了解的是，電極組件14二 二=可以在工件u。的表面上都很均_，或是依據本發 月/、匕貫施例中的其它參數而改變。 職裝置_的-些實施例是要在工件11G上提供高度的 平囬土表面。藉施加又流電 包』逆杨电極142上並將機械媒介 )磨傺到表面層⑴，讓驅動去除掉表面層⑴材料的主要 因素是（a)表面層⑴表面上材料的氧化，以及（b)氧化材料的 機械式去除。此外，因兑雷,+ U為弘虱电泥經由不接觸到表面層} i工 的遠端電極⑷而被加到表面層⑴上，所以遠端電極⑷能 對工们^做相對移動（或是工件⑽能相對於電極⑷移動） 以避兄吾表面層的過度負載在朝向去除電鍵/平坦化循環 的結尾而變得非常薄時，在表面層⑴上產生—致性的壓降 。這是要在表面層111上提供高度平面型表面。 圖4A-4C顯示出一些不同的遠端電極組件，會接收電化恩 機械處理時所產生的氣體，並將氣體從微電子工件11〇及卞/ 或遠端電極上導流出去。參閱圖核’職裝置2〇〇的會施例 包括-遠端電極組件240。該遠端電極組件2術具有被電極 承載器244承接住的第—遠端電極2仏與第二遠電極2仏。 84057 -21 - 1278370 运4電極組件2 4 0能進一步包括一機械媒介2 5 〇 (標識成相鄭 到第一遠端電極242 a的第一機械媒介2 5 〇 a以及相鄰到第二 遠電極242b的第二機械媒介250b)。該實施例的特點是，機 械媒介2 5 0 —般可以是無孔材料，該無孔材料覆蓋的地方會 比母個运端電極242a-242b芫全朝下的表面還小。因此每個 遠端電極242a-242b的曝露表面245都直接面向工件1 1〇。曝 路表面245能包括由通道表面248所定義出的通道247，以便 從接近工件110及/或遠端電極242a-b的區域收集並將氣體 引導出去。 在本實施例的另一特點中，遠端電極242a_242b可以藉能 降低或去除掉遠端電極242a-242b之間直接電氣耦合的間隙 249而相互分隔開。結果，電流會經由微電子工件之1 1〇導 電材料111而從遠端電極24以或2421)之一流過，並且流到遠 騎電極242 a或242b另一個。此外，除了通道247以外，間隙 249能還能藉由通道247來操作，從遠端電極242&讣及/或微 電子工件U 0而將氣體引導出去。在本實施例的另一特點中 ，電極承載器244能以足夠讓氣體藉離心力輻射狀朝外的速 率來旋轉（以箭頭”G，，表示）。 圖4A中所π ECM裝置200的另一特點是，機械媒介25〇a_b 的型式與安置能控制遠端電極242a-b與微電子工件H〇之間 的弘氣耦合。例如，機械媒介2 5 〇a-b 一般可以是無孔墊，使 得只有遠端電極242a-b的曝露區域經由電化學處理溶液τ 6】 而被電氣轉合到工件〗〗。卜 A 2 ^ ,,, J丄忏H U上。在另一貫施例中，機械媒介 250a-b可以是多孔或部分多孔墊，在機械媒介25〇^b插入工 84057 -22- 1278370 件110與遠端電極2423-1)之區域内的遠端電極2423_13與工件 no之間’提供某種電氣耦合。經由機械媒介25〇a_b的電氣 耦合程度是小於遠端電極242a-b與工件11〇之間的電氣耦合 程度。 ^ 圖4Β顯示出ECM裝置200的另一實施例，該ecm裝置2〇〇 包括一遠端電極組件240b，該遠端電極組件24〇b包括第一 與第二遠端電極242a-b，以及一電極承載器244，該電極承 載器244承載住第一與第二遠端電極242a斗。本實施例的 ECM裝置200也包括第一與第二機械媒介25〇a_b，由相對應 的第一與第二遠端電極242a-b承載住。每個機械媒介25〇a_b 都疋多孔墊，該多孔墊包括孔洞251與通徑252，該通徑252 是從孔洞251延伸出去，往上朝向遠端電極242a_b。遠端電 極242a-b包括面向下的通道247,是以流體方式而與通徑252 相通所以，通徑2 5 2旎讓氣體從工件1 1 q經由機械媒介2 5 〇 而上升，被收集到通道247内。此外，當通徑252被注滿溶 液161時，通徑252還提供遠端電極242a-b與工件π〇之間的 電氣連結。 圖4C顯示出ECM裝置200的另一實施例，該ECM裝置2〇〇 包括一遠端電極組件240c，該遠端電極組件240c包括第一與 第二遠端電極242a-b、以及相對應的第一與第二機械媒介 2i0a-b。在本實施例的特點中，機械媒介25〇a-b可以是多孔 性的，將氣體從工件1 10上導引出去。本實施例的另一特點 可以包括在遠端電極242a-b内的朝下通道247，從遠端電極 242a-b收集氣體並導引氣體出去。遠端電極組件24〇(：也可以 84057 -23 - 1278370 包括-電極承載器244,該電極承載器244具有傾斜的下部 ^面270,讓通道247朝向所選定的傾斜角。在本實施例的 特點中，每個遠端電極242_的朝下表面⑺也都是何斜的 。傾斜角可以是淺角度，以降低工件UQ與電極之間 從電極組件—外緣在距離上的差異。在其^施例中， 傾斜角可以很陡，以便故意降低電極242a_b邊緣與工件π〇 〈間的電氣搞合。在另一實施例中’通道Μ?可以是向上候 斜(如圖4C所示）’雖然電極242“的下部表…是水平 (由圖4C中參考數號245所示之虚線來表示）。 圖5Α-5Ε顯示出依據本發明的其它實施例，具有⑽裝置 的遠端電極組件340。參閱圖5Α，該等圖示顯示出遠端電杯 組件340的實施例，該遠端電極组件34q包括—電極承⑲ 34】、由電極承載器341所承載的第一與第二遠電極⑷“ ，、以及由第-與第二遠端電極342“所承載的—機械媒介 乃0。該機械媒介350可以包括複數個區域352a_d，都具有不 同的電氣特性。例如在本實施例中，區域352b_d可以安置成 環繞在中央區域352a的周邊，或是在其它實施例中，這些區 域都可以具有其它圖案或配置（比如格子狀）。該等區域 〇52a-d可以具有不同的介電常數及/或導電係數，以變動跨 越表面層iu上遠端電極342a_b與工件n〇之間的電二 程度°因此’由遠端電極3仏始表面層lu所形成的電^ 阻抗在工件HO的表面上會變動，讓用電氣方式去除材料的 速率或改變材料的速率發生變動。另外，空間變動的電I 特性可以對會造成空間不均句材料去除速率的因素進= 84057 -24· 1278370 正（比如在工件1 1 0與機械媒介3 50之間相對速率上的—致 差異）。 性 圖5 B頜tf出依據本發明另一實施例的遠端電極組件3切 ，该逆端電極組件34〇具有多孔性機械媒介3 5〇。在本警二 例的特點電中，機械媒介3 50可以包括複數個孔洞3 53遍， = 354,其中可以包含有處理溶液i6i，以便用電氣方 逆袖電極342a-b耦合到工件11〇的表面層m。在本實施=广 =特點中，機械媒介35〇的多孔性可以從某一區域到另' 區域做連續性的變動。例如’該多孔性可以在輻射狀朝： 的万向上降低’以降低工件i】〇邊緣上的電氣耦合。在其它 實施例中，該多孔性可以用其它方式改變，以便在工件、^ 的不同區域上，提供不同程度的電氣耦合。 圖5C顯示出一遠端電極組件34〇,該遠端電極组件㈣包 括一機械媒介350 ,該機械媒介35〇包括三同心區域3 55a_c ，每個區域都有不同的多孔性。例如，第—區域3 5 $ a可以具 有在整個第-區域355a中都均勻的第—均勾多孔性，第二區 域355b可以具有在整個第二區域35讣中都均勻的第二均勻 多孔性’以及第三區域355c可以具有在整個第三區:3价 中都均勻的第三均勾多孔性。在本實施例的特點中，該機 械媒介350的多孔性可以在輻射狀朝外的方向上降低，或是 在其它實施例中，，多孔性可以用其它方式“：在立： ^施例中’該機械媒介350可以具有比該三獨立區⑽心 返多或更少的區域。 圖5〇顯示出一遠端電極組件340 ’該遠端電極組件34〇包 84057 -25 - 1278370 括一機械媒介3 50，該機械媒介3 50依據發明的另一實施例 具有複數個多孔性與非多孔性的區域。例如，該機械媒介 3 50可以包括一中央多孔性區域3 56a以及一外部非多孔性區 域3 56b。外部非多孔性區域3 56b可以用同心圓方式定位在 中央多孔性區域3 56a周邊。所以，遠端電極342a-b可以電氣 耦合到只在遠端電極組件340之中央區域中的工件n〇上， 而且▲機械媒介3 5 0可以用機械方式在較大接觸面積上去 除材料。圖5E顯示出另一配置，其中遠端電極組件34〇包括 一機械1介ο 5 0，該機械媒介3 5 0具有均勻的多孔性。該機 械媒介350可以貼附到一遮蔽罩357上，其中遮蔽罩357是被 插在工件1 1 0與遠端電極3 4 2 a - b之間，以避免或至少限制在 该區域内运端電極342a-b與工件11〇之間的電氣|禹合。 圖6是依據本發明另一實施例對微電子工件丨丨〇進行電化 學機械處理的E C Μ處理裝置6 0 0的剖示圖。該e c Μ處理裝置 6 0 0的數個組件疋以示思圖方式在圖6中顯示，而且具有類 似芩考數號的組件是參考圖2-6中的類似組件。在本實施例 的特點中，該ECM處理裝置600具有一平板或平台61〇、一 工件承載斋組件6 2 0、一工件電極6 3 0、一遠端電極組件6 4 〇 ’該工件電極6 3 0是由工件承載器組件6 2 〇承載，該遠端電 極組件640具有被諸平台610所承載的遠端電極642a_b。該 ECM處理裝置600也可以包括一機械媒介65〇，該機械媒介 65〇是被該平台610所承載住。一驅動系統612會轉動（箭頭 G)及/或來回推動（箭頭Η)違平台6 1 〇，而一驅動组件$ 2 2會轉 動（箭頭I)及/或來回推動（箭頭J)該工件承載器62〇。可以協 84057 -26 - 12783.70 調平台610與工件承載器62〇的移動，以便將工件11〇的處理 表面1 1 3壓到機械媒介6 5 〇的抽承表面6 5 3上。 在處理循環期間，可以將一個或多個處理溶液66〇安置在 機械媒介650的軸承表面653上。選取出機械媒介65〇與處理 落液660來提供適當的電氣、化學與機械特性給工件1 1 〇。 例如，該機械媒介650可以是固定的磨擦研磨墊或非磨擦墊 。該處理溶液660可以是從工件110上電鍍或去除電鍍材料 的電解質溶液，及/或以化學方式及/或機械方式從工件ΐι〇 上去除掉材料的平坦化溶液。因此該處理溶液66〇可以包括 一電解質及/或磨擦顆粒，以及選取來與工件11〇進行顆粒反 應用的化學物質。 mECM處理裝置600也可以包括切換組件18〇、直流電源 】72、父流電源174以及控制器190。該工件電極63〇與遠端 電極642a-b都是耦合到切換組件18〇，藉以選擇性的將直流 黾及/或交",υ黾施加到不同電極上。顯示於圖$中的電化學處 理裝置600因此可以進行許多相同的方法，參考上述圖3的 來做說明。 圖7是上述ECM處理裝置600實施例的剖示圖，更加仔細 的_不出一邯分的裝置。在本實施例的特點中，ECM裝置 600可以進步的包括複數個在機械媒介650底下及/或整合 到機械媒介650中的第一與第二遠端電極642a^。例如，遠 端電極642a-b可以成對配置並由平台61〇承載。每個遠端電 極642a-b都具有一面朝微電子工件i 1〇的表面643，而且每個 返端電極642a-b都可以相鄰到一分隔器644，該分隔器644 84057 -27 - 1278370 是以電氣方式將第一與第二電極642a-b相互絕緣開。該第一 與第二電極642a-b可以藉由複數個流體導溝663分成獨立群 組’處理溶液66丨可以經過該流體導溝663而流到機械媒介 650的底部。所以機械媒介650可以具有孔洞或通徑（未顯示 於圖7中），處理溶液66 1可以經過該通徑而流到軸承表面653 。機械媒介6 5 0可以包括在該軸承表面6 5 3上的複數個通道 654，該通道654會（a)將處理溶液661傳送出去跨越機械媒介 650的表面，及（b)收集氣泡並將氣泡從工件1 10上移出去。 仍參考圖7，ECM處理裝置600可以選擇性的.包括一非接 觸能量源699，該非接觸能量源699在處理循環期間靠近該 處理溶液661。該非接觸能量源699可以是超音波能量發射 态，能發射出超音波能量到處理流體66〗内。所需要的是， 將超音波能量施加到處理溶液661會增加從靠近工件1 =的 區域上去除掉氣泡的速率及/或效率。 從上述中將會了 例，但是可以在不 。因此，本發明除 受限制的。 [圖示簡單說明] 解到，在此已經說明 偏離本發明精神與範 了所附之申請專利範 本發明的特定實施 圍下做不同的修改 園的限定以外是不 圖1是依據習用技術用以 料之裝置的側面仰視圖。 圖2是依據習用技術用以 料之另一裝置的側面仰視圖 圖3是依據本發明實施例1 4 0 may include a chestnut-one id iT pole 142 or a plurality of independent ridges in the embodiment shown in Figure 3, the side alpha " 咏 electrode assembly! 40 includes a flute, a soil electrode I42a', and a second distal electrode. The end-to-end electrode 84057 -15 - 1278370 142b is spaced apart from the first distal electrode 142& The distal electrode 142 is also spaced from the workpiece grip 叩1 20 such that the distal electrode 142 does not contact the material surface layer 丨n during the processing cycle. The field-envelope component 1400 also includes a driving component 146, such that the electrode 1 4 2 is relatively 10,000; the workpiece 1 1 is moved to control the rise of the electrode (indicated by arrows ', F, '), 10,000 Twist (indicated by arrow ''G') and/or translation (indicated by arrow "n"). In other practical cases, the distal electrode assembly 丨4〇 is fixed and does not necessarily include the drive assembly 46. When the distal electrode assembly 14 is held stationary, the drive system 122 associated with the workpiece gripper 120 can provide relative movement between the workpiece n〇 and the electrode "two." The ECM device 1A also includes a mechanical medium 150 between the workpiece gripper 12 and the distal electrode 142 for mechanically rubbing the workpiece. In the particular embodiment illustrated in FIG. 3, the mechanical media 15 includes a first polishing pad i5h and a first polishing pad B2b' that is attached to the trailing end of the first distal electrode 142a, and The second polishing pad 152b is attached to the trailing end of the second distal electrode "π. The mechanical medium 150 may be a non-abrasive unit without abrasive particles, or a rubbing unit having fixed abrasive particles. In addition, the mechanical medium 150 may have a patterned surface having independent rise characteristics or grooves on the surface, or the pattern surface may be planar in nature. The surface of the planarized polishing pad 1 52a-b may define a surface layer of material Bearing surface 153. A suitable type of mechanical media 15 that can be attached to the distal electrode 142 is manufactured by 3M Company of St. Paul, Minnesota, and the company. Work gripper 120, workpiece electrode 130, and distal electrode assembly 4〇 can be 84057 -16 - 1278370 container i6 containing electrochemical treatment solution 161. In the other - two: column, the electrochemical treatment solution can be dispersed to the work. On, applied to the researcher Uncle, 卞- Processing time It is used to flatten the solution 'on the 'dispersion device' and it is not necessary to request this. Electrochemical: Hu Lijiao. Therefore, these embodiments, complex formula 纟aa to handle the falling liquid 161 can It is a liquid or glue or a surface layer of material that will shovel the material to the workpiece (1). (1) Can be removed by electroplating. For example, electrochemical treatment (4) Layer n: genus: sub- and galvanic plating of metal ions The metal surface can be coated with a wide range of electrolytes, for example, on the surface layer (1) of the electrochemical treatment solution (6). Electroplating to the metal ECIV [device 1 〇〇 will be electroplated] to no 夂 / times such as mechanical from the workpiece 1 1 The surface layer of (1) is removed from the material. The workpiece electrode 13 is connected to, 丨, an "Electrical ^ 2 is electrically connected to the electrochemical treatment solution, and when there is a voltage between the workpiece ^ = any of the end-to-end electrodes 142" Current is caused to flow through the metal surface layer (1). When there is a voltage between the workpiece electrode 13G and the first distal electrode 142a and the second distal "pole 42b, an independent current also flows through the metal surface layer 2 and thus the ECM device HH" includes a DC power source 172, an AC power source. And a switching component 180. The switching component 180 is coupled to the workpiece electrode p. υ 'remote electrode 1, 42, DC power source 1 72, and AC power source 1 74. When using the selected electrode, use the selected electrode No and 142 combination 'electroplating the workpiece m and removing the material on the core workpiece 110' switching component 1δ〇 will be selectively coupled to the DC power supply 1 7 2 and/or the intersection watt power supply 1 7 4, or decoupling The EC device 1 can further include a control crying 1 9 〇, v to operate the switch 84057 -17 - 1278370 = just, the controller 19 has a computer operable medium, the computer can: the medium contains some instructions The controller 190 can also be operatively coupled to the DC power source m and the AC power source 174 to adjust the current electrical parameters applied to the poles: pole no and the distal electrode 142. The computer operable illusion can be software Or hardware, (4) will cause The operation switching component sub-selectively couples the DC power source 172 and the AC power source m to the selected workpiece lightning pole 13 and/or the remote electrode 142 combination, and/or (9) causes the controller bay mechanical medium to press to the metal On the surface of the surface layer (1). For example, the computer operable medium that controls the crying contains control switching components 18A, DC power source m's parent mud power source m, drive assembly 146 and drive system 122 instructions to electrically (4) metal the material. The surface layer (1) and/or the metal surface layer (1) is subjected to a plating/planarization process. The method of embodiment is implemented by instructions contained in a computer-operable medium: including an independent plating stage and separation from the plating stage. The separate electroplating/planarization stage is opened. The computer operable medium in the controller 19 causes the processing surface 113 of the workpiece no to contact the electrochemical treatment solution (6), and applies the direct current 2 to the workpiece electrode 130 and at least the distal end. The electroplating stage of this embodiment is initiated on the electrode 142. The container 16 can be filled with the solution 161, or the solution (6) can be directly dispersed into the metal surface layer (1), and the workpiece ι The processing surface U3 of the 〇 is contacted to the solution 161. The workpiece electrode can be attached to one end of the DC power source 172, and one or two remote electrodes 142 can be coupled to the other end of the DC power source 172 to apply DC power. To the workpiece n. The distal electrode (4) and the workpiece electrode 130 can be detached from the AC power source 174 such that only DC power is applied to the workpiece 1 1 840 during the plating phase of the particular embodiment by 84057 -18 - 12783.70. In the case where the gold is burned onto the surface layer n丨, the workpiece electrode 13 〇 is reduced, the soil is v — and the terminal electrode 142 is the anode. Narrow, switch polarity and plate other '. As taught, the electrode of the workpiece is 3 〇 is the anode, and the terminal electrode 142 is the cathode. After a sufficient amount of material is electroplated onto the top layer 11 1 , the computer operable medium in the controller 9 借 直 , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , Decoupling to initiate the slab-plating/planarization stage. The controller 1 90 also causes (a) the switching assembly 18 to couple the Tushan pedestrian source 174 to the first distal electrode 142a to the end-to-end electrode 42b, and/or (b) the drive assembly 146 to be ground. The bearing surface 153 of the pad 152a-b is on the surface of the surface layer 11 1 . Controlling the crying 190 also allows the drive group mouth, and/or the relative gains generated by the drive system 122 between the workpiece 11〇 and the electrode assembly 140 to >,,,, and -b is rubbed to the surface across the surface layer 111. μ In the embodiment of removing the electric/flat W W 十 十 十 十 十 十 十 十 十 十 十 十 交流 交流 交流 交流 交流 交流 交流 交流 交流 142 142 142 142 142 142 142 142 142 142 142 142 142 142 142 交流 142 142 142 142 142 交流 交流 交流On the 142b, the mechanical medium 150 is the surface. Between the first-distal electrode 142a and the second distal electrode (4)b: the parental current is to change the surface of the surface layer (1) such that the surface layer (1) = becomes easier to mechanically remove. For example, the alternating current will oxidize the surface of copper, or other genus, to form a layer that is more easily mechanically ground. The alternating current also removes the electroplated material from some surface layers, and the junction is not in the electroplating/planarization stage, because of the electrochemical induction between the electrochemical treatment (6) and the surface layer (1) due to the alternating current. The "interaction" and the mechanical friction caused by the mechanical medium 15Q remove the material from the surface of the facing layer 111. 84057 -19 - 1278370 An instruction contained in a computer operable medium of the detector 190, the other a, consistent method of implementation by the instruction, including applying a direct current to the workpiece electrode and applying a force to the t-t a, , and at least one of the second and second distal electrodes, and simultaneously applying alternating current to the first and second distal electrodes for simultaneous plating and removal of 4 plating/flattening. This embodiment can also include allowing at least the microelectronic workpiece or L electrode assembly 110 to move relative to each other while applying direct current and centroids to the surface of the workpiece 110 to mechanically rub the material away. In the embodiment of the child, the alternating current can be much smaller than the direct current so that the effective direct current carries the alternating current. The distal electrode assembly 140 and the workpiece 11 are held stationary during processing, or at least the distal electrode assembly 140 or the workpiece 1 1 is movable relative to the other, positioning the distal electrode 142 to a surface relative to the surface layer 1 . For example, the distal electrode 142 may have a fortunate residence time on selected areas of the workpiece 110, as explained in more detail below. The computer 彳 operating medium of the controller 190 can also contain instructions for mechanically removing material from the surface layer ln during the different stages of the processing cycle. For example, the controller 190 can command the drive assembly 146 to press the polishing pad 152 & tons of bearing surface 153 onto the surface layer 1U, and (a) apply direct current to the workpiece electrode 130 and the distal electrode 142 to plate the material to On the workpiece, (交流) an alternating current is applied to the first distal electrode 14^ and the second distal electrode 14 hole, or (c) no current is applied to the workpiece electrode 13A, the first distal electrode Μ. Or on the second distal electrode 142b. Thus, the chemical mechanical flattening treatment using only the electrochemical treatment solution ΐ6ι and the mechanical medium 50 can be carried out electrically with the surface layer 1U. In another embodiment of the present invention, the distal electrode assembly can be adjusted between the 佟84057 -20 - 1278370 field temples such that the distal electrode 142 is juxtaposed to the first stomach of the stomach & η, ^, ^ Zone or,,, two times a different time than the second zone. In Γ-τ, when the thickness of the surface layer (1) is :::: edge =: large, the electrode assembly 140 may have a longer v-retention time at the edge than at the center in order to be removed from the workpiece, 丄\ The residence time of the electrode assembly 140 in the removal plating/planarization stage is generally thicker: r:: The area on the workpiece is still long. It is to be understood that the electrode assembly 14 22 can be in the workpiece u. The surface is very _, or it varies according to other parameters in this month/period. Some embodiments of the device _ are to provide a high level of flat soil on the workpiece 11G. By applying a reflowable package "reverse the anode electrode 142 and mechanical media" to the surface layer (1), the main factor that causes the drive to remove the surface layer (1) material is (a) oxidation of the material on the surface of the surface layer (1), and (b) Mechanical removal of oxidized materials. In addition, due to the lightning, + U is added to the surface layer (1) by the remote electrode (4) which does not touch the surface layer, so the distal electrode (4) can move relative to the workers ( Either the workpiece (10) can move relative to the electrode (4) to avoid an excessive load on the surface layer of the brother to become very thin at the end of the removal of the key/flattening cycle, resulting in a uniform pressure drop across the surface layer (1). This is to provide a highly planar surface on the surface layer 111. Figures 4A-4C show a number of different distal electrode assemblies that receive the gas generated during the electrochemical treatment and direct the gas out of the microelectronic workpiece 11 and/or the distal electrode. Referring to the embodiment of the core device, the distal electrode assembly 240 is included. The distal electrode assembly 2 has a first distal electrode 2'' and a second distal electrode 2'' received by the electrode carrier 244. 84057 - 21 - 1278370 The 4 electrode assembly 2 40 can further comprise a mechanical medium 25 〇 (identified as a first mechanical medium 2 5 〇 a to the first distal electrode 242 a and adjacent to the second far Second mechanical medium 250b) of electrode 242b. A feature of this embodiment is that the mechanical medium 250 can generally be a non-porous material that covers less than the surface of the parent end electrodes 242a-242b. Thus, the exposed surface 245 of each of the distal electrodes 242a-242b is directly facing the workpiece 1 1〇. The exposed surface 245 can include a channel 247 defined by the channel surface 248 to collect and direct gas out of the region proximate the workpiece 110 and/or the distal electrode 242a-b. In another feature of this embodiment, the distal electrodes 242a-242b can be spaced apart from each other by a gap 249 that reduces or eliminates direct electrical coupling between the distal electrodes 242a-242b. As a result, current flows through one of the remote electrodes 24 or 2421) via the conductive material 111 of the microelectronic workpiece, and flows to the other of the remote electrodes 242a or 242b. In addition, in addition to the channel 247, the gap 249 can also be operated by the channel 247 to direct gas out of the distal electrode 242 & and/or the microelectronic workpiece U 0 . In another feature of this embodiment, the electrode carrier 244 can be rotated (indicated by an arrow "G", at a rate sufficient to allow the gas to radiate outwardly by centrifugal force. Another of the π ECM devices 200 of Figure 4A The feature is that the type and placement of the mechanical medium 25〇a_b can control the galvanic coupling between the distal electrodes 242a-b and the microelectronic workpiece H. For example, the mechanical medium 25 5 〇ab can generally be a non-porous pad, so that only The exposed areas of the distal electrodes 242a-b are electrically transferred to the workpiece via the electrochemical treatment solution τ 6]. A 2 ^ , ,, J丄忏HU. In another embodiment, the mechanical medium 250a -b may be a porous or partially porous pad, providing a certain between the distal electrode 2423_13 and the workpiece no in the region of the mechanical medium 25 〇 ^b inserter 84057 -22 - 1278370 110 and the distal electrode 2423-1) Electrical coupling. The degree of electrical coupling via the mechanical medium 25A-b is less than the degree of electrical coupling between the distal electrodes 242a-b and the workpiece 11A. ^ Figure 4A shows another embodiment of an ECM device 200, the ecm device 2〇〇 includes a distal electrode assembly 240b, the remote power The pole assembly 24A includes first and second distal electrodes 242a-b, and an electrode carrier 244 that carries the first and second distal electrodes 242a. The ECM apparatus 200 of the present embodiment Also included are first and second mechanical media 25A-b, carried by the respective first and second distal electrodes 242a-b. Each of the mechanical media 25A-b is a porous pad comprising a hole 251 and The path 252 extends from the aperture 251 upwardly toward the distal electrode 242a-b. The distal electrode 242a-b includes a downwardly facing channel 247 that is fluidly coupled to the path 252 so that the path 2 5 2 旎 let the gas rise from the workpiece 1 1 q via the mechanical medium 2 5 , and collect into the channel 247. Furthermore, when the path 252 is filled with the solution 161, the path 252 also provides the distal electrode 242a- Electrical connection between b and workpiece π. Figure 4C shows another embodiment of an ECM device 200 that includes a distal electrode assembly 240c that includes first and second Remote electrodes 242a-b, and corresponding first and second mechanical media 2i0a-b. In a feature of this embodiment, the mechanical medium 25〇ab may be porous to direct gas out of the workpiece 110. Another feature of this embodiment may include a downward passage in the distal electrode 242a-b. 247, collecting gas from the distal electrodes 242a-b and directing the gas out. The distal electrode assembly 24 (: may also be 84057 -23 - 1278370 includes an electrode carrier 244 having a slanted lower surface) 270, with channel 247 facing the selected tilt angle. In the features of this embodiment, the downward facing surface (7) of each distal electrode 242_ is also oblique. The tilt angle can be a shallow angle to reduce the difference in distance between the workpiece UQ and the electrode from the electrode assembly-outer edge. In its embodiment, the tilt angle can be steep to deliberately reduce the electrical engagement between the edge of the electrode 242a_b and the workpiece π〇. In another embodiment, 'channel Μ? may be upward slant (as shown in FIG. 4C) 'although the lower table of electrode 242' is horizontal (represented by the dashed line indicated by reference numeral 245 in FIG. 4C) Figures 5A-5B show a distal electrode assembly 340 having a device (10) in accordance with other embodiments of the present invention. Referring to Figure 5A, the illustrations show an embodiment of a distal cup assembly 340, the distal electrode assembly 34q includes an electrode holder 1934, a first and a second remote electrode (4) carried by the electrode carrier 341, and a mechanical medium carried by the first and second distal electrodes 342. Mechanical medium 350 can include a plurality of regions 352a-d, all having different electrical characteristics. For example, in the present embodiment, regions 352b-d can be disposed to surround the perimeter of central region 352a, or in other embodiments, these regions can have Other patterns or configurations (such as grids). The regions 〇52a-d may have different dielectric constants and/or conductivities to vary across the surface layer iu between the distal electrode 342a_b and the workpiece n〇 Degree ° so ' The electrical impedance formed by the surface layer lu of the distal electrode 3 varies on the surface of the workpiece HO, so that the rate at which the material is removed electrically or the rate at which the material is changed changes. In addition, the spatially varying electrical I characteristic can be The factor that will cause the material removal rate of the spatially uneven sentence is = 84057 -24· 1278370 positive (such as the difference in the relative velocity between the workpiece 1 10 and the mechanical medium 3 50). Figure 5 B jaw tf out According to another embodiment of the present invention, the distal electrode assembly 3 is cut, and the reverse electrode assembly 34 has a porous mechanical medium 35. In the characteristic electricity of the second example of the police, the mechanical medium 350 may include a plurality of holes. 3 53 passes, = 354, which may contain a treatment solution i6i for coupling to the surface layer m of the workpiece 11〇 with the electrical square anti-sleeve electrodes 342a-b. In this embodiment = wide = characteristic, the mechanical medium 35〇 is porous Sexuality can vary continuously from one region to another. For example, 'the porosity can be lowered in the radial direction toward the 10,000' to reduce the electrical coupling on the edge of the workpiece i. In other embodiments, The porosity can be It is otherwise altered to provide varying degrees of electrical coupling over different areas of the workpiece. Figure 5C shows a distal electrode assembly 34(R) including a mechanical medium 350, the mechanical medium 35 The crucible includes three concentric regions 3 55a_c each having a different porosity. For example, the first region 3 5 $ a may have a uniform first-wide hook porosity throughout the first region 355a, and the second region 355b There may be a second uniform porosity 'which is uniform throughout the second region 35 以及 and the third region 355c may have a third uniform porosity that is uniform throughout the third region: trivalent. In the features of this embodiment, the porosity of the mechanical medium 350 may be reduced in a radially outward direction, or in other embodiments, the porosity may be otherwise "": in the case: 'The mechanical medium 350 can have more or less regions than the three separate zones (10). Figure 5A shows a distal electrode assembly 340 'The distal electrode assembly 34 840 84057 - 25 - 1278370 includes a mechanical Medium 3 50, the mechanical medium 350 has a plurality of regions of porosity and non-porosity according to another embodiment of the invention. For example, the mechanical medium 350 can include a central porous region 3 56a and an external non-porosity. Region 3 56b. The outer non-porous region 3 56b can be positioned concentrically around the central porous region 3 56a. Thus, the distal electrodes 342a-b can be electrically coupled only in the central region of the distal electrode assembly 340 The workpiece n〇, and ▲mechanical medium 350 can mechanically remove material over a larger contact area. Figure 5E shows another configuration in which the distal electrode assembly 34 includes a mechanical device. The mechanical medium 350 has a uniform porosity. The mechanical medium 350 can be attached to a mask 357, wherein the shield 357 is inserted between the workpiece 110 and the distal electrode 3 4 2 a - b To avoid or at least limit the electrical coupling between the terminal electrodes 342a-b and the workpiece 11A in this region. Figure 6 is an electrochemical mechanical treatment of a microelectronic workpiece crucible in accordance with another embodiment of the present invention. A cross-sectional view of the EC Μ processing device 600. The components of the ec Μ processing device 600 are shown in FIG. 6 in a schematic manner, and the components having similar reference numbers are referred to FIG. A similar component of -6. In the features of this embodiment, the ECM processing apparatus 600 has a flat plate or platform 61, a workpiece carrying component 6200, a workpiece electrode 630, and a distal electrode assembly 6. 4 〇 'The workpiece electrode 630 is carried by a workpiece carrier assembly 62 2 具有 having a distal electrode 642a_b carried by the platforms 610. The ECM processing device 600 may also include a mechanical medium 65〇, the mechanical medium 65〇 is carried by the platform 610. The motion system 612 will rotate (arrow G) and/or push back (arrow Η) against the platform 6 1 〇, while a drive assembly $ 2 2 will rotate (arrow I) and/or push back (arrow J) the workpiece carrier 62〇. It is possible to coordinate the movement of the platform 610 with the workpiece carrier 62〇 in order to press the processing surface 1 1 3 of the workpiece 11〇 onto the suction surface 65 3 of the mechanical medium 65 5 . One or more processing solutions 66 can be placed on the bearing surface 653 of the mechanical medium 650 during the processing cycle. Mechanical media 65 〇 and treatment 660 are selected to provide appropriate electrical, chemical, and mechanical properties to the workpiece 1 1 〇. For example, the mechanical media 650 can be a fixed abrasive pad or a non-abrasive pad. The treatment solution 660 can be an electrolyte solution that electroplates or removes plating material from the workpiece 110, and/or a planarization solution that chemically and/or mechanically removes material from the workpiece. Thus, the treatment solution 66 can include an electrolyte and/or abrasive particles, as well as chemicals selected for particle counter-application with the workpiece 11〇. The mECM processing device 600 may also include a switching component 18, a DC power source 72, a parent current source 174, and a controller 190. The workpiece electrode 63A and the distal electrode 642a-b are both coupled to the switching assembly 18A to selectively apply DC and/or υ黾 to the different electrodes. The electrochemical processing device 600 shown in Figure $ can therefore perform many of the same methods, as explained with reference to Figure 3 above. Fig. 7 is a cross-sectional view showing an embodiment of the above ECM processing apparatus 600, which is more careful. In a feature of the present embodiment, the ECM device 600 can be advanced to include a plurality of first and second distal electrodes 642a below the mechanical media 650 and/or integrated into the mechanical media 650. For example, the distal electrodes 642a-b can be configured in pairs and carried by the platform 61. Each of the distal electrodes 642a-b has a surface 643 facing one side of the microelectronic workpiece i1, and each of the return electrodes 642a-b can be adjacent to a divider 644, the divider 644 84057 -27 - 1278370 electrically insulates the first and second electrodes 642a-b from each other. The first and second electrodes 642a-b can be divided into separate groups by a plurality of fluid channels 663. The processing solution 66 can flow through the fluid channel 663 to the bottom of the mechanical medium 650. Thus mechanical medium 650 can have holes or passages (not shown in Figure 7) through which processing solution 66 1 can flow to bearing surface 653. The mechanical medium 6550 may include a plurality of channels 654 on the bearing surface 653 that will (a) transport the processing solution 661 out across the surface of the mechanical medium 650, and (b) collect bubbles and bubbles Remove from workpiece 1 10. Still referring to Fig. 7, ECM processing device 600 can be selective. It includes a non-contact energy source 699 that is adjacent to the processing solution 661 during the processing cycle. The non-contact energy source 699 can be an ultrasonic energy emission state that emits ultrasonic energy into the processing fluid 66. What is needed is that applying ultrasonic energy to the treatment solution 661 increases the rate and/or efficiency of removal of bubbles from the area near the workpiece 1 =. There will be an example from the above, but it can be no. Therefore, the invention is not limited. [Simple Description of the Drawings] It is to be understood that the specific implementation of the invention is not limited to the specific embodiments of the invention. Side view of the device. Figure 2 is a side elevational view of another apparatus for use in accordance with conventional techniques. Figure 3 is an embodiment of the present invention.
仗械電子工株)4- rr/v 4-A 丄仵上去除掉導電材 從微電子# 弘丁工件上去除掉導電材 〇 用以對微電子工件進行電化學 84057 -28 - 1278370 機械處理之裝置的側視圖。圖3中所選定的組件是以示意圖 的方式顯示。 圖4A-4C是與依據本發明數個實施例的電化學機械裝置 一起使用的遠端電極組件的剖示圖。 圖5AoE是與依據本發明數個實施例的電化學機械裝置 一起使用的遠端電極組件的剖示圖。 圖6是依據本發明另一實施例用以對微電子工件進行電 化學機械處理之裝置的剖示圖。所選定的組件在圖6中也是 以示意圖的方式顯示。 圖7是與依據本發明某些實施例的電化學機械裝置一起 使用的工件抓取器與遠端電極組件的剖示圖。 [圖式代表符號說明] 100， 200 ， 600 電化學機械裝置 110 微電子工件 111 表面層 113 處理表面 120 工件抓取器 121 基板承載器 122 驅動系統 130 工件電極 140， 240 ， 240c ， 遠端電極組件 340， 640 142， 242 遠端電極 142a ’ 242a’ 342a第一遠端電極 84057 -29 - 1278370 ，642a U2b，242b，342b ，642b 144 ， 244 ， 341 146 150 ， 250 ， 250a ， 250b ， 650 152a 152b 153 ， 653 160 161 5 661 172 174 180 190 245 247 ， 654 248 249 252 ， 354 270 ， 272 ， 355a ， 355b ， 355c ， 643 352a ， 352b 第二遠端電極 電極承載器 驅動組件 機械媒介 第一研磨塾 第二研磨墊 轴承表面 容器 電化學處理溶液 直流電源 交流電源 切換組件 控制器 曝露表面 通道 通道表面 間隙 通徑 表面 區域 -30 - 84057 1278370 353 孔洞 610 平台 612 驅動系統 620 工件承載器組件 663 導溝 84057 - 31 -仗 电子 4- 4- 4- 4- 4- 4- 4- 4- 4- 4- 4- 4- 4- 4- 4- 4- 4- 4- 4- 4- 4- 4- 4- 4- 4- 4- 4- 4- 4- 4- 4- 4- 4- 4- 4- 4- 4- 4- 4- 4- 4- 4- 4- 4- 4- 4- 4- 4- 4- 4- Side view of the device. The components selected in Figure 3 are shown in schematic form. 4A-4C are cross-sectional views of a distal electrode assembly for use with an electrochemical mechanical device in accordance with several embodiments of the present invention. Figure 5AoE is a cross-sectional view of a distal electrode assembly for use with an electrochemical mechanical device in accordance with several embodiments of the present invention. Figure 6 is a cross-sectional view of an apparatus for electrochemical mechanical treatment of a microelectronic workpiece in accordance with another embodiment of the present invention. The selected components are also shown schematically in Figure 6. 7 is a cross-sectional view of a workpiece gripper and distal electrode assembly for use with an electrochemical mechanism in accordance with some embodiments of the present invention. [Illustration of Symbols] 100, 200, 600 Electrochemical Mechanism 110 Microelectronic Workpiece 111 Surface Layer 113 Processing Surface 120 Work Gripper 121 Substrate Carrier 122 Drive System 130 Workpiece Electrodes 140, 240, 240c, Remote Electrode Assembly 340, 640 142, 242 distal electrode 142a '242a' 342a first distal electrode 84057 -29 - 1278370, 642a U2b, 242b, 342b, 642b 144, 244, 341 146 150, 250, 250a, 250b, 650 152a 152b 153, 653 160 161 5 661 172 174 180 190 245 247 , 654 248 249 252 , 354 270 , 272 , 355a , 355b , 355c , 643 352a , 352b second distal electrode electrode carrier drive assembly mechanical medium first grinding塾Second Abrasive Pad Bearing Surface Container Electrochemical Treatment Solution DC Power Supply AC Power Switching Unit Controller Exposure Surface Channel Channel Surface Clearance Surface Area -30 - 84057 1278370 353 Hole 610 Platform 612 Drive System 620 Workpiece Carrier Assembly 663 Guide Groove 84057 - 31 -