[go: up one dir, main page]

TWI265569B - Plasma processing method - Google Patents

Plasma processing method

Info

Publication number
TWI265569B
TWI265569B TW092117266A TW92117266A TWI265569B TW I265569 B TWI265569 B TW I265569B TW 092117266 A TW092117266 A TW 092117266A TW 92117266 A TW92117266 A TW 92117266A TW I265569 B TWI265569 B TW I265569B
Authority
TW
Taiwan
Prior art keywords
processing method
plasma processing
plasma
organic layer
processed body
Prior art date
Application number
TW092117266A
Other languages
Chinese (zh)
Other versions
TW200401365A (en
Inventor
Tomoyo Yamaguchi
Takashi Fuse
Kiwamu Fujimoto
Masanobu Honda
Kazuya Nagaseki
Original Assignee
Tokyo Electron Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tokyo Electron Ltd filed Critical Tokyo Electron Ltd
Publication of TW200401365A publication Critical patent/TW200401365A/en
Application granted granted Critical
Publication of TWI265569B publication Critical patent/TWI265569B/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32192—Microwave generated discharge
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
    • H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
    • H01L21/02118—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer carbon based polymeric organic or inorganic material, e.g. polyimides, poly cyclobutene or PVC
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3105—After-treatment
    • H01L21/311—Etching the insulating layers by chemical or physical means
    • H01L21/31105—Etching inorganic layers
    • H01L21/31111—Etching inorganic layers by chemical means
    • H01L21/31116—Etching inorganic layers by chemical means by dry-etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3105—After-treatment
    • H01L21/311—Etching the insulating layers by chemical or physical means
    • H01L21/31144—Etching the insulating layers by chemical or physical means using masks

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • General Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Computer Hardware Design (AREA)
  • Chemical & Material Sciences (AREA)
  • Manufacturing & Machinery (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Chemical & Material Sciences (AREA)
  • Inorganic Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Plasma & Fusion (AREA)
  • Analytical Chemistry (AREA)
  • Drying Of Semiconductors (AREA)
  • Physical Or Chemical Processes And Apparatus (AREA)

Abstract

The present invention relates to a plasma processing method, which comprises: the operation to prepare the processed body having an organic layer on the surface, and the operation to enhance the plasma-endurance of the organic layer by irradiating H2 plasma onto the processed body.
TW092117266A 2002-06-27 2003-06-25 Plasma processing method TWI265569B (en)

Applications Claiming Priority (9)

Application Number Priority Date Filing Date Title
JP2002187422 2002-06-27
JP2002214628 2002-07-24
JP2002271588 2002-09-18
JP2002271589 2002-09-18
US42078802P 2002-10-24 2002-10-24
US42356602P 2002-11-05 2002-11-05
JP2003003540 2003-01-09
JP2003110225 2003-04-15
JP2003151416 2003-05-28

Publications (2)

Publication Number Publication Date
TW200401365A TW200401365A (en) 2004-01-16
TWI265569B true TWI265569B (en) 2006-11-01

Family

ID=30004139

Family Applications (1)

Application Number Title Priority Date Filing Date
TW092117266A TWI265569B (en) 2002-06-27 2003-06-25 Plasma processing method

Country Status (5)

Country Link
JP (1) JP5008691B2 (en)
CN (1) CN100440449C (en)
AU (1) AU2003244166A1 (en)
TW (1) TWI265569B (en)
WO (1) WO2004003988A1 (en)

Families Citing this family (44)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20040171260A1 (en) * 2002-06-14 2004-09-02 Lam Research Corporation Line edge roughness control
US7547635B2 (en) 2002-06-14 2009-06-16 Lam Research Corporation Process for etching dielectric films with improved resist and/or etch profile characteristics
JP4643916B2 (en) * 2004-03-02 2011-03-02 株式会社アルバック Method and apparatus for dry etching of interlayer insulating film
US7712434B2 (en) * 2004-04-30 2010-05-11 Lam Research Corporation Apparatus including showerhead electrode and heater for plasma processing
US20060011578A1 (en) * 2004-07-16 2006-01-19 Lam Research Corporation Low-k dielectric etch
JP4537818B2 (en) * 2004-09-30 2010-09-08 株式会社日立ハイテクノロジーズ Plasma processing method
US7053003B2 (en) * 2004-10-27 2006-05-30 Lam Research Corporation Photoresist conditioning with hydrogen ramping
JP4602171B2 (en) * 2005-06-22 2010-12-22 東京エレクトロン株式会社 Plasma etching method, plasma etching apparatus, control program, and computer storage medium
JP2007123766A (en) * 2005-10-31 2007-05-17 Tokyo Electron Ltd Etching method, plasma processing apparatus, and storage medium
JP4827081B2 (en) * 2005-12-28 2011-11-30 東京エレクトロン株式会社 Plasma etching method and computer-readable storage medium
JP4928832B2 (en) * 2006-05-25 2012-05-09 東京エレクトロン株式会社 Etching method and computer-readable recording medium
JP5108489B2 (en) * 2007-01-16 2012-12-26 株式会社日立ハイテクノロジーズ Plasma processing method
CN102089867B (en) * 2008-07-11 2013-11-27 东京毅力科创株式会社 Plasma processing apparatus
JP2010041028A (en) * 2008-07-11 2010-02-18 Tokyo Electron Ltd Substrate processing method
JP5128421B2 (en) * 2008-09-04 2013-01-23 東京エレクトロン株式会社 Plasma processing method and resist pattern modification method
JP5207541B2 (en) * 2008-12-26 2013-06-12 富士フイルム株式会社 Liquid repellent film forming method, nozzle plate, ink jet head, and electronic apparatus
JP5486883B2 (en) * 2009-09-08 2014-05-07 東京エレクトロン株式会社 Processing method of workpiece
CN102041508B (en) * 2009-10-23 2012-07-25 中芯国际集成电路制造(上海)有限公司 Groove etching method
JP5781808B2 (en) * 2010-03-31 2015-09-24 東京エレクトロン株式会社 Plasma processing method and plasma processing apparatus
JP5809396B2 (en) * 2010-06-24 2015-11-10 東京エレクトロン株式会社 Substrate processing method and substrate processing apparatus
JP2012028431A (en) * 2010-07-21 2012-02-09 Toshiba Corp Method of manufacturing semiconductor device
JP5642001B2 (en) * 2011-03-25 2014-12-17 東京エレクトロン株式会社 Plasma etching method
JP5142236B1 (en) 2011-11-15 2013-02-13 エルシード株式会社 Etching method
KR20130063871A (en) * 2011-12-07 2013-06-17 삼성전자주식회사 Magnetic device and method of manufacturing the same
JP6050944B2 (en) * 2012-04-05 2016-12-21 東京エレクトロン株式会社 Plasma etching method and plasma processing apparatus
CN103377885B (en) * 2012-04-27 2016-03-16 南亚科技股份有限公司 method of opening
JP6008608B2 (en) * 2012-06-25 2016-10-19 東京エレクトロン株式会社 Resist mask processing method
JP6030886B2 (en) * 2012-08-09 2016-11-24 東京エレクトロン株式会社 Plasma etching method and plasma etching apparatus
WO2014042192A1 (en) * 2012-09-13 2014-03-20 東京エレクトロン株式会社 Method for treatment of treated substrate, and plasma treatment device
JP6063264B2 (en) 2012-09-13 2017-01-18 東京エレクトロン株式会社 Method for processing substrate and plasma processing apparatus
KR102148336B1 (en) * 2013-11-26 2020-08-27 삼성전자주식회사 Method of treating a surface, method of fabricating a semiconductor device and the semiconductor device so fabricated
JP6243722B2 (en) * 2013-12-10 2017-12-06 東京エレクトロン株式会社 Etching method
JP6329839B2 (en) * 2014-07-29 2018-05-23 東京エレクトロン株式会社 Plasma processing apparatus and plasma processing method
JP6438831B2 (en) * 2015-04-20 2018-12-19 東京エレクトロン株式会社 Method for etching an organic film
JP2016027658A (en) * 2015-09-07 2016-02-18 エルシード株式会社 Etching method
JP2017092376A (en) 2015-11-16 2017-05-25 東京エレクトロン株式会社 Etching method
JP6643875B2 (en) * 2015-11-26 2020-02-12 東京エレクトロン株式会社 Etching method
US9508556B1 (en) * 2016-01-29 2016-11-29 Taiwan Semiconductor Manufacturing Co., Ltd. Method for fabricating fin field effect transistor and semiconductor device
JP7137927B2 (en) 2017-12-20 2022-09-15 キオクシア株式会社 Semiconductor device manufacturing method
CN109994379B (en) * 2017-12-29 2021-10-19 长鑫存储技术有限公司 Double patterning method and double patterning structure
US11106126B2 (en) * 2018-09-28 2021-08-31 Taiwan Semiconductor Manufacturing Co., Ltd. Method of manufacturing EUV photo masks
JP7175162B2 (en) * 2018-11-05 2022-11-18 東京エレクトロン株式会社 Plasma etching method and plasma etching apparatus for object to be processed
JP7174634B2 (en) * 2019-01-18 2022-11-17 東京エレクトロン株式会社 Method for etching a film
KR102668527B1 (en) * 2022-03-24 2024-05-23 성균관대학교산학협력단 Plasma processing device for etching comprising consumable metal member

Family Cites Families (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH04151668A (en) * 1990-10-15 1992-05-25 Mitsubishi Electric Corp Formation of pattern
JPH04184916A (en) * 1990-11-20 1992-07-01 Fujitsu Ltd Resist mask forming method and dry etching method
JP2953348B2 (en) * 1991-12-30 1999-09-27 ソニー株式会社 Resist pattern forming method, antireflection film forming method, antireflection film, and semiconductor device
JPH06163479A (en) * 1992-11-17 1994-06-10 Sony Corp Dry etching method
JP3348454B2 (en) * 1993-02-05 2002-11-20 ソニー株式会社 Antioxidant method
JPH07106310A (en) * 1993-09-29 1995-04-21 Victor Co Of Japan Ltd Dry etching method
JP2882301B2 (en) * 1995-01-13 1999-04-12 日本電気株式会社 Method for manufacturing semiconductor device
US5888413A (en) * 1995-06-06 1999-03-30 Matsushita Electric Industrial Co., Ltd. Plasma processing method and apparatus
JPH09306893A (en) * 1996-05-15 1997-11-28 Tokyo Ohka Kogyo Co Ltd Method of removing antireflective film
JPH10261628A (en) * 1996-10-24 1998-09-29 Hyundai Electron Ind Co Ltd Method for manufacturing contact hole of semiconductor device
JPH10233386A (en) * 1997-02-19 1998-09-02 Sony Corp Dry etching method
JPH10268526A (en) * 1997-03-24 1998-10-09 Toshiba Corp Semiconductor device manufacturing method and pattern forming method
US6013582A (en) * 1997-12-08 2000-01-11 Applied Materials, Inc. Method for etching silicon oxynitride and inorganic antireflection coatings
JP2000269198A (en) * 1999-03-19 2000-09-29 Toshiba Corp Plasma processing method and plasma processing apparatus
JP2001110784A (en) * 1999-10-12 2001-04-20 Hitachi Ltd Apparatus and method for plasma treatment
JP3447647B2 (en) * 2000-02-25 2003-09-16 株式会社日立製作所 Sample etching method
JP2002043590A (en) * 2000-07-24 2002-02-08 Fuji Electric Co Ltd Semiconductor device and method of manufacturing the same
JP4605878B2 (en) * 2000-09-25 2011-01-05 パナソニック株式会社 Semiconductor device and manufacturing method thereof

Also Published As

Publication number Publication date
CN100440449C (en) 2008-12-03
WO2004003988A1 (en) 2004-01-08
TW200401365A (en) 2004-01-16
JP2009164626A (en) 2009-07-23
CN1663030A (en) 2005-08-31
JP5008691B2 (en) 2012-08-22
AU2003244166A1 (en) 2004-01-19

Similar Documents

Publication Publication Date Title
TWI265569B (en) Plasma processing method
TW200707466A (en) Conductive patterning
MX256050B (en) A method for improving the selectivity of a catalyst and a process for the epoxidation of an olefin.
TW200738270A (en) Method of treating depression using a TNFα antibody
EP1780313A3 (en) Treated Aluminum Article And Method For Making Same
TW200511422A (en) Treatment or processing of substrate surfaces
GB0207350D0 (en) Surface
EP1191569A3 (en) Method for reducing plasma-induced damage
AU2003254344A1 (en) Method for obtaining the pathogenic resistance in plants
MY144995A (en) Copper alloy for electronic machinery and tools and method of producing the same
WO2007038514A3 (en) Apparatus and method for substrate edge etching
WO2004027113A3 (en) Improved silver plating method and articles made therefrom
PL368719A1 (en) Inoculants for intermetallic layer
AU2003301858A1 (en) Surface treatment method for vacuum member
TW200618169A (en) Method of forming a component having dielectric sub-layers
AU2003248256A1 (en) Surface treating method for substrate
AU2003206681A1 (en) Method of electron beam processing
AU2002232127A1 (en) Method for the processing of leather
WO2008036266A3 (en) Ion source and metals used in making components thereof and method of making same
MXPA05010911A (en) Method of treating the surface characteristics of an elastomeric article.
TW200609980A (en) Emitter for an ion source and method of producing same
AU2003274221A1 (en) Method for coating the surface of metallic material, device for carrying out said method
TW200500162A (en) Brazing abrasive wire saw and method for producing the same
AU2003251536A1 (en) Method for forming semiconductor processing components
WO2004011449A3 (en) Method for the production of phenylalanine derivatives

Legal Events

Date Code Title Description
MM4A Annulment or lapse of patent due to non-payment of fees