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TWI262960B - Method for forming silicon dioxide film using siloxane - Google Patents

Method for forming silicon dioxide film using siloxane

Info

Publication number
TWI262960B
TWI262960B TW93104720A TW93104720A TWI262960B TW I262960 B TWI262960 B TW I262960B TW 93104720 A TW93104720 A TW 93104720A TW 93104720 A TW93104720 A TW 93104720A TW I262960 B TWI262960 B TW I262960B
Authority
TW
Taiwan
Prior art keywords
silicon dioxide
siloxane
dioxide film
forming silicon
reactant
Prior art date
Application number
TW93104720A
Other languages
Chinese (zh)
Other versions
TW200424346A (en
Inventor
Jae-Eun Park
Kang-Soo Chu
Joo-Won Lee
Jong-Ho Yang
Original Assignee
Samsung Electronics Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from KR1020040007104A external-priority patent/KR100564609B1/en
Application filed by Samsung Electronics Co Ltd filed Critical Samsung Electronics Co Ltd
Publication of TW200424346A publication Critical patent/TW200424346A/en
Application granted granted Critical
Publication of TWI262960B publication Critical patent/TWI262960B/en

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Landscapes

  • Chemical Vapour Deposition (AREA)
  • Formation Of Insulating Films (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)

Abstract

A method is provided for forming a silicon dioxide film using atomic layer deposition (ALD), wherein a halogen-or NCO-substituted siloxane is used as a Si source. The method includes feeding a substitutes siloxane as a first reactant onto a substrate to form a chemisorbed layer of the first reactant, and thereafter feeding a compound consisting of oxygen and hydrogen as a second reactant onto the chemisorbed layer to form the desired silicon dioxide film.
TW93104720A 2003-02-27 2004-02-25 Method for forming silicon dioxide film using siloxane TWI262960B (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
KR20030012324 2003-02-27
KR1020040007104A KR100564609B1 (en) 2003-02-27 2004-02-04 Silicon dioxide film formation method using siloxane compound

Publications (2)

Publication Number Publication Date
TW200424346A TW200424346A (en) 2004-11-16
TWI262960B true TWI262960B (en) 2006-10-01

Family

ID=33134409

Family Applications (1)

Application Number Title Priority Date Filing Date
TW93104720A TWI262960B (en) 2003-02-27 2004-02-25 Method for forming silicon dioxide film using siloxane

Country Status (2)

Country Link
JP (1) JP4494041B2 (en)
TW (1) TWI262960B (en)

Families Citing this family (21)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100505668B1 (en) * 2002-07-08 2005-08-03 삼성전자주식회사 Method for forming silicon dioxide layer by atomic layer deposition
JP4975414B2 (en) * 2005-11-16 2012-07-11 エーエスエム インターナショナル エヌ．ヴェー． Method for film deposition by CVD or ALD
JP4896041B2 (en) * 2006-01-17 2012-03-14 株式会社日立国際電気 Manufacturing method of semiconductor device
US7902074B2 (en) 2006-04-07 2011-03-08 Micron Technology, Inc. Simplified pitch doubling process flow
US7498273B2 (en) * 2006-05-30 2009-03-03 Applied Materials, Inc. Formation of high quality dielectric films of silicon dioxide for STI: usage of different siloxane-based precursors for harp II—remote plasma enhanced deposition processes
US7749574B2 (en) * 2006-11-14 2010-07-06 Applied Materials, Inc. Low temperature ALD SiO2
JP5384852B2 (en) * 2008-05-09 2014-01-08 株式会社日立国際電気 Semiconductor device manufacturing method and semiconductor manufacturing apparatus
JP5329265B2 (en) * 2009-03-09 2013-10-30 株式会社日立国際電気 Semiconductor device manufacturing method and substrate processing apparatus
JP5385001B2 (en) * 2009-05-08 2014-01-08 株式会社日立国際電気 Semiconductor device manufacturing method and substrate processing apparatus
US8758512B2 (en) * 2009-06-08 2014-06-24 Veeco Ald Inc. Vapor deposition reactor and method for forming thin film
JP5792972B2 (en) * 2011-03-22 2015-10-14 株式会社日立国際電気 Semiconductor device manufacturing method and substrate processing apparatus
JP5602711B2 (en) * 2011-05-18 2014-10-08 東京エレクトロン株式会社 Film forming method and film forming apparatus
US9514935B2 (en) * 2012-03-28 2016-12-06 Hitachi Kokusai Electric Inc. Method of manufacturing semiconductor device, method of processing substrate, substrate processing apparatus, and program
JP6415808B2 (en) 2012-12-13 2018-10-31 株式会社Ｋｏｋｕｓａｉ Ｅｌｅｃｔｒｉｃ Semiconductor device manufacturing method, substrate processing apparatus, and program
JP6155063B2 (en) * 2013-03-19 2017-06-28 株式会社日立国際電気 Semiconductor device manufacturing method, substrate processing apparatus, and program
JP5864637B2 (en) 2013-03-19 2016-02-17 株式会社日立国際電気 Semiconductor device manufacturing method, substrate processing apparatus, program, and recording medium
JP2013179332A (en) * 2013-04-26 2013-09-09 Hitachi Kokusai Electric Inc Semiconductor device manufacturing method and substrate processing apparatus
JP5519059B2 (en) * 2013-05-23 2014-06-11 株式会社日立国際電気 Semiconductor device manufacturing method and substrate processing apparatus
JP5957128B2 (en) * 2015-07-29 2016-07-27 株式会社日立国際電気 Semiconductor device manufacturing method, substrate processing apparatus, program, and recording medium
US10283348B2 (en) * 2016-01-20 2019-05-07 Versum Materials Us, Llc High temperature atomic layer deposition of silicon-containing films
US10822458B2 (en) * 2017-02-08 2020-11-03 Versum Materials Us, Llc Organoamino-functionalized linear and cyclic oligosiloxanes for deposition of silicon-containing films

Also Published As

Publication number Publication date
JP2004260192A (en) 2004-09-16
TW200424346A (en) 2004-11-16
JP4494041B2 (en) 2010-06-30

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