TWI260459B - Reflection-transmission type liquid crystal display device and method for manufacturing the same - Google Patents

Abstract

Disclosed are a liquid crystal display (LCD) device and a method for manufacturing the LCD device. The LCD device has a substrate including a display region and a pad region located in a periphery of the display region, the display region having a transparent electrode, the pad region having a pad electrode. The transparent electrode and the pad electrode are formed from the same layer. A reflective electrode having a transmission window exposing a portion of the transparent electrode is formed on the transparent electrode. The manufacturing process can be simplified because the transparent electrode is directly connected to the reflective electrode. Since the pad electrode is formed of the same layer as the transparent electrode, no metal corrosion occurs to thereby increase the pad reliability during COG bonding.

Description

1260459 玖 发明 发明 发明 发明 发明 发明 发明 发明 发明 发明 发明 发明 发明 发明 发明 发明 发明 发明 发明 发明 发明 发明 发明 发明 发明 发明 发明 发明 发明 发明 发明 发明 发明 发明 发明 发明 发明 发明 发明 发明 发明 发明 发明 发明 发明 发明 反射 反射 反射 反射The manufacturing method thereof is particularly related to a reflection-transmissive liquid crystal display device and a method of manufacturing the same, in which the pad electrode is made of the same layer of the transparent electrode to improve the reliability of the pad. BACKGROUND OF THE INVENTION 10 15 In a flat panel device, a liquid crystal display (LCD) device is widely used for multiple/devices because of its light and thin electronic, low power dissipation, and high quality image display. The LCD device usually includes a transmissive 'reflective and reflective-transmissive type. Transmissive LCDI uses a light source (such as a backlight) to display information. Reflective coffee 1 uses natural light to display information. The reflection-transmissive coffee f is required to operate in a transmissive mode, for example, in a transmissive mode, and in a reflective mode, at other times, to display an image by reflecting incident light. At present, a thin film transistor-liquid crystal display device (tft_lcds) is widely used in which the structure of the FT LCD is a separate electrode for two substrates, and a thin film dielectric m (TFT) is formed in a pixel region of the substrate, and m is switched to be applied to The voltage of the electrode. The strong figure is a cross-sectional view showing a conventional reflection _ transmissive liquid crystal display. The 1A to 1C towel, the reflection-transmission type liquid crystal display device is an amorphous X-ray type TFT_LCD having a bottom structure of 20 1260459 玖. The first Affl shows a display area of a liquid crystal display device where a thin film transistor 15 is formed. The ib diagram and the 1C diagram are not the gate pad area and the data pad area of the liquid crystal display device.芩1A to 1C, after depositing the first metal layer on the substrate 1 made of insulating material such as glass, quartz or 5 sapphire, the first metal layer is patterned by the first mask to form a gate. wiring. The gate wiring includes a gate line (not shown) extending in a first direction, a gate 12 being branched by a gate line, and a gate pad 连结 connected to the end of the gate line for applying a scan Voltage to gate 12. A gate insulating layer 14 composed of tantalum nitride is formed on the substrate 1 to form a gate wiring thereon, and then an amorphous germanium layer and an n + doped amorphous germanium layer are sequentially formed on the gate insulating layer 14. The amorphous germanium layer and the doped amorphous germanium layer are then patterned using a second mask by a lithography method to form an active pattern 16 and a resistive contact pattern 18. Thus, the active pattern 16 is composed of amorphous austenite, 15 and the resistive contact pattern 18 is made of n+ doped amorphous germanium. After depositing the second metal layer on the resistive contact pattern 18 and the gate insulating layer 14, the second metal layer is patterned by a lithography method using a third photomask to form a data wiring. The data wiring includes a data line (not shown) extending in a second direction perpendicular to the first direction, source/drain electrodes 2 and 22, which are branched by 20-bed lines, and a data pad. It is connected to the end of the data line to apply the image voltage to the source 2〇.乂,,: After. The boring path is at the source 2〇; and the pole 22 is in contact with the pattern j 8 and is removed by dry etching to form a channel region of the thin film transistor. After the inorganic passive layer 25 is formed on the data wiring and the gate insulating layer 14, the portion 1260459 玖, the description of the invention is divided by the inorganic passive layer 25 divided on the pole electrode 22 by a lithography method using a fourth mask. Here, the pad contact holes and the pad contact holes 35 and 35 of the data pad 19 are exposed at the same time. After the organic passive layer 26 is formed on the entire surface of the resultant structure, the organic 5 passive layer 26 is on the drain 22 and the pad region. The fifth photomask is partially removed by exposure and development, thereby forming a first contact hole 28 exposing the drain electrode 22. Similarly, a plurality of slits for scattering light are formed on the organic passive layer using a sixth mask. 26 surface. In other words, the first contact hole 28 and the grooving are formed by a two-mask human exposure method but simultaneously formed by one development method. 10 Transparent conductive deposition of indium tin oxide (IT0) or indium zinc oxide (IZO) 2 After the resultant structure, the transparent conductive layer is patterned by a lithography method using a seventh photomask, thereby forming a transparent electrode 30 which is connected to the drain 22 through the first contact hole 28. The inorganic layer is, for example, tantalum nitride. A buffer layer 32 made of a material is formed on the entire surface of the obtained 15 structure (including the transparent electrode 3), and then the buffer layer 32 is etched and removed by a lithography method using an eighth mask to form a part of the exposed bungee. Contact hole 3 4 . 'There is a reflective layer made of a metal having a south reflectivity such as aluminum-tantalum (Al-Nd) after the second contact hole 34 and the buffer layer 32, and the reflective layer is made by a ninth mask using a 2D lithography method. The reflective electrode 36 is patterned to be coupled to the drain 22 via the second contact hole 34. The reflective electrode % has a reflection window 1 exposing the lower transparent electrode 30. At the same time, the gate pad electrode 38 and the data pad electrode 制成 are fabricated. The gate pad electrode 38 and the data pad electrode 4 are connected to the gate pad U and the data pad 19, respectively. 1260459 发明, Invention Description According to the conventional $ method, a reflection-transmission type amorphous-type thin film transistor _ liquid crystal display device is manufactured using a nine-mask. At this time, the buffer layer 32 made of nitride nitride is formed between the transparent electrode 3 and the reflective electrode % to prevent electricity generated by direct contact between the transparent electrode and the reflective electrode 36. In particular, when the transparent electric 5 pole 30 is a multi-layer pixel electrode underlayer, the insulating layer must be interposed between the transparent electrode and the reflective electrode 36 to prevent the reflective electrode 36 during development of the photoresist layer for patterning the reflective electrode %. It peels off due to the voltage difference between the transparent electrode 3〇 and the reflective electrode%. Thus, the additional lithography method is required to etch the ruthenium layer to form the contact hole connecting the reflective electrode 36 to the thin film transistor, and the manufacturing process becomes complicated. Since the buffer layer 32 is located above the organic passive layer 26, the buffer layer μ is formed by a low temperature chemical vapor deposition (CVD) method. In addition, since the outline electrodes 38 and 4G are made of the same layer of the reflective electrode 36, the metal may be corroded during the subsequent wafer-on-glass (COG) bonding process. 15% of the pixels with the transparent electrode as the bottom electrode, and the Kyu-cho, the right 1 is made of metal instead of the metal to prevent the corrosion of the metal (4) and the peeling of the reflective electrode. However, this method is complicated because at least one mask is required to pattern the buffer layer. Further, since the organic buffer layer is located above the organic passive layer, the reflectance of the reflective electrode is lowered, and the buffer layer is difficult to form a pattern. Further, since the pad electrode and the reflective electrode are made of the same layer, the metal is corroded in the subsequent C〇G bonding process. The structure is 'transparent electrode direct contact with reflected electricity. Figs. 2A to 2C are cross-sectional views showing another conventional reflection-transmissive liquid crystal display device. 2nd to 8th. In the figure, 'reflection-transmission liquid crystal display; two poles. Fig. 2A shows liquid crystal 20 1260459 发明, invention description display area of display device, picture and 2C picture respectively display area of thin film electro-crystal in the display area, non-liquid crystal display device gate pad area and data pad

Body 55. 2B Mai Zhao 2A to yan, ^ shoulder, depositing the first metal layer on the substrate 50 (made of insulating material such as glass 彳μ % ^ 爰 'di-metal layer using the first mask to make a pattern by German method The idle wiring is formed. The gate wiring is included in the first direction (the line between the extension lines (not shown) 'the secret of branching by the gate line, and the end of the line to the end of the line for applying the scanning power to the interpole" Pad 5丨. 10

The insulating layer 54 is formed on the substrate 5 (on which the inter-layer wiring is formed), and then the amorphous layer and the n + doped amorphous layer are sequentially formed on the inter-insulating layer 54. Subsequently, the amorphous dream layer and the amorphous amorphous 7 layer are patterned by micro-lithography using a second mask to form a non-W active pattern 56, and a resistive contact pattern 58 made of n-doped amorphous germanium.

> After the second metal layer is formed in the resistive contact pattern 58 and the gate insulating layer, the second metal layer is patterned by using a lithography method using a third mask to form a data wiring. The data wiring includes a data line (not shown) extending in a second direction perpendicular to the first direction, and the source/dummy poles 6 and 62 of the data line branch and the ends of the data line are connected to the end of the data line for applying the image. Voltage to source 6 〇 data pad. Subsequently, a portion of the resistive contact pattern 58 exposed between the source 6 〇 and the 汲 20 pole 62 is removed by dry etching to form a channel region of the thin film transistor. After forming the inorganic passive layer 65 on the data wiring and the gate insulating layer 54, the upper portion of the inorganic passive layer 65 on the gate 62 is removed by a lithography method using a fourth photomask. Here, the pad pads 5 and the pad contact holes 69 and 71 for exposing the pad pad 5 are formed at the same time. After forming the organic passive layer 66 on the entire surface of the resulting structure 9 1260459 发明, the organic passive layer 66 is patterned by exposure and development using the fifth mask and the sixth mask, thus simultaneously forming the exposed drain 62 Contact hole 68 and a plurality of slots. After depositing a reflective layer made of a metal having a high reflectivity such as __(4)_Nd, the reflective layer is patterned by a lithography method using a seventh photomask to form a reflective electrode 70, a closed pad electrode 74, and a material. Pad electrode 76. The reflective electrode 70 is coupled to the drain via a contact hole 68. The gate pad electrode 74 and the data pad electrode 76 are connected to the closing pad 51 and the data pad 59 via the contact holes, respectively. 10 15 20 Subsequently, after depositing a transparent conductive layer made of IZO on the reflective electrode, the transparent conductive layer is patterned by a lithography method using an eighth photomask to form a transparent electrode 72 which directly contacts the reflective electrode 7 (). Here, there is a transparent electrode (10). A region having no reflective electrode 70 forms a transmission window 2. According to the foregoing method, since the transparent electrode 72 is in direct contact with the reflective electrode, the manufacturing process of the conventional method can eliminate the need for a mask, and since the transparent electrode 72 needs to be set as the top layer, it will not The reflective electrode 70_ is separated, but the electrical corrosion occurs between the reflective electrode 7() and the transparent electrode 72. In addition, when the transparent electrode 72 is made of 12 ,, it reacts with (4) and (4) engraving or chromium etchant, The transparent electrode 72 and the reflective electrode 7 are simultaneously patterned. Further, the transparent electrode 72 must be located at the top electrode, and the crucible directly contacts the reflective electrode 70 and the transparent electrode 72. [Brief Description of the Invention] The present invention solves the aforementioned problems, and thus the present invention A purpose is to provide a liquid crystal display device according to the invention, wherein "the τ 逍 month electrode is directly in contact with the reflective electrode 俾 to simplify 'private' and the lining electrode is made of lining 塾 reliability. The transparent conductive layer of the moon electrode is made of sputum. Another object of the present invention is to provide a method for manufacturing a liquid crystal display device, which is a method for simplifying the process, and lining the transparent electrode directly contacting the reflective electrode. The transparent conductive layer of the moon electrode is made to improve the reliability of the lining. In order to achieve the object of the present invention, a liquid crystal display device is provided, and the substrate has a display area. Forming a pixel thereon, and the pad area is located around the display area, and the pad area has a pad-electrical electrode and the pad electrode is made of the same s and 'reflection The electrode is formed on the transparent electrode and exposes a transmission window of a portion of the transparent electrode. According to a preferred embodiment of the present invention, the (four) metal layer having the same shape and the reflective electrode is formed between the transparent electrode and the reflective electrode. . The barrier layer is made of a material that has a button engraving rate substantially equal to the rate of the reflective electrode. The pixel includes an amorphous film transistor. The pixels include amorphous Aussie type thin film transistors. The transparent electrode contains a steel oxide (_, the reflective electrode contains the inscription (4)_Nd) and the barrier metal pattern contains molybdenum-tungsten (Mo-W). 10 15 曰曰丨 曰曰丨 层 此外 此外 此外 此外 此外 此外 此外 此外 此外 此外 此外 此外 此外 为了 为了 为了 为了 为了 为了 为了 为了 为了 为了 为了 为了 为了 为了 为了 为了 为了 为了 为了 为了 为了 为了 为了 为了 为了 为了 为了 为了 为了 为了The film + a , the polyamine electric day (TFT) is formed on the substrate display, the TFT includes a gate, the first band and the first electrode and an active pattern; the display area 20 1260459 kan, the invention description - passive The layer is formed on the TM substrate. The passive layer has a hole exposing the second electric i-transparent electrode, which is formed on the passive layer display area; a layer is formed on the passive layer pad area, and the lining is _, the brother and the child The transparent electrode is formed by the same; the reflective electrode is formed on the transparent electrode, and has a portion of the transparent electrode; and the barrier metal layer is patterned. The shape between the bright electrode and the reflective electrode is The reflective electrodes have the same shape. According to a feature of the invention, a transparent electrode is formed on the aperture and the passive aperture and is thereby coupled to the second electrode via the aperture. According to a second feature of the present invention, the transparent electrode is formed only on the passive layer (except for the hole), and the barrier metal layer pattern and the reflective electrode are formed on the hole and the transparent electrode, and thus are connected to the second electrode via the hole. According to still another feature of the present invention, the metal layer pattern and the reflective electrode are formed on the transparent electrode except for the holes. In order to achieve another object of the present invention, there is provided a method of manufacturing a liquid crystal display device, the method comprising the steps of: forming a transparent conductive layer on a soil plate 'the substrate has a display area and - a periphery of the display area The germanium region is formed by forming a reflective layer on the substrate having a transparent conductive layer; the reflective layer is annealed to prevent the reflective layer from being peeled off; and the reflective layer is patterned to form the reflective electrode 20 . According to an embodiment of the present invention, chlorine (4) is treated as a bond between the core layer and the τ layer. The method further comprises the steps of: forming a reflective solar layer to form a transparent conductive layer on the display region and - lining the electrode on the spacer region. The method further includes the following steps: V month 'Electrical layer making pattern step and 12 1260459 玖, invention description Sun Hao, 圯 迓 导电 导电 导电 导电 导电 导电 导电 导电 导电 导电 导电 导电 导电 ; ; 导电 导电 导电 导电 导电 导电 导电 导电 导电 导电 导电 导电 导电 导电 导电 导电 导电 导电The pattern is uniformly used to "adhesiveness of the transparent conductive layer. The method further comprises the steps of: after forming the reflective electrode, patterning the transparent conductive layer to form a transparent electrode on the display region, and - a pad electrode on the pad region. The reflective electrode, the transparent electrode, and the pad electrode are made using a photomask. The reticle is a half dimming mask or a slit reticle. The annealing step of the reflective layer is above about (10). The temperature of c is carried out for more than about (10) hours. The method further includes the step of forming a metal layer of the reflective layer. When the reflective layer is patterned, a pattern is formed to form a barrier metal layer pattern. Before the step, a barrier ‘blocking metal layer is formed simultaneously

The transparent conductive layer, the barrier metal layer, and the reflective layer are formed at a temperature of from about 2 Torr to about 150X. The material contained in the resistive metal layer has an etch rate similar to the etch rate of the reflective layer. The transparent conductive layer comprises indium tin oxide (Ting (7) 15, the barrier metal layer comprises molybdenum-tungsten (Mo_w), and the reflective layer comprises aluminum_鈥 (Al-Nd) 〇

According to an embodiment of the present invention, there is provided a method of fabricating a liquid crystal display I, the method comprising the steps of: forming a gate on a substrate display area and a gate pad on the substrate at a periphery of the display area Forming a gate insulating layer on the region, such that the gate insulating layer covers the gate and the gate pad; forming an active pattern and a resistive contact pattern on the gate insulating layer; forming a first electrode and a second electrode at the resistor Contacting the pattern and simultaneously forming the data pad on the gate insulating layer of the lining region; forming a passive layer on the first and second electrodes, the data pad and the gate insulating layer; etching the passive layer 俾13 1260459 玖The invention discloses that the first, second and third contact holes are respectively formed for exposing the second electrode gate pad and the data pad; forming a transparent electrode in the display area, and simultaneously forming a gate pad electrode and a data a pad electrode for contacting the gate lining and the data lining via the second and second contact holes respectively; sequentially forming a barrier metal layer and a reflective layer on the transparent electrode and the pad electrode; annealing The shot layer is used to prevent peeling of the reflective layer; and the reflective layer and the barrier metal layer are patterned to form a barrier metal layer pattern and a reflective electrode. 10 15 20 according to another embodiment of the present invention provides a method of fabricating a liquid crystal display device, the method comprising the steps of: forming an active pattern on a substrate; forming a gate insulating layer on the substrate with an active pattern; Forming a gate to form an active pattern position on the gate insulating layer; sequentially forming the first and second interlayer dielectric layers on the gate and the gate insulating layer; etching the first and second layers

The dielectric layer and the gate insulating layer form a contact hole for respectively exposing the first and second regions of the active case; forming first and second electrodes, which are connected to the first and second via the through hole 7 Forming a passive layer on the first and first electrodes and on the second interlayer dielectric layer having the first and second electrodes to form a passive layer to form a via hole for exposing the second electrode; forming a transparent On the passive layer, 'sequential formation—the sacrificial metal layer and the reflective layer are on the through electrode; annealing the reflective layer to prevent the reflective layer from being (four); and patterning the shot layer and the barrier metal layer to form a resistive metal layer and The reflection is extremely polar on the transparent electrode.

According to the structure of the present invention, the reflective layer is contacted. The multi-layer pixel electrode of a liquid crystal display device has a transparent electrode which is "lower layer", and the transparent electrode is preferably directly formed to prevent electricity from being generated between the transparent electrode and the reflective electrode. 14 1260459 玖, the etching rate of the invention is the same as the etching rate of the reflective electrode. The barrier metal layer pattern is inserted between the θ and the reflective electrode. Therefore, the buffer layer is formed between the transparent electrode and the reflective electrode by a conventional method, and the mask is reduced to 5 Å, thereby simplifying the manufacturing process. In addition, since the pixel electrode is formed by using a photomask by using a half dimming mask or a slit mask, the manufacturing process can be further simplified. Further, after the reflective layer is deposited, the annealing of the reflective layer is about 2〇〇1. The temperature is carried out for about several hours, thereby preventing peeling of the reflective electrode in the pixel electrode with the transparent electrode as the underlayer. 10 , , , _ — The pad electrode is made of a layer of a transparent electrode (conducting oxide layer). Therefore, the metal rot is not generated during the COG joining method, so the reliability of the liner can be improved. The drawing simply illustrates 15 devices; 1A to 丨. The front view shows a conventional reflection-transmission liquid crystal display. Figs. 2A to 2C are cross-sectional views showing another-preferred reflection-transmission liquid helium display device; Machi & /Night Day 20 "Fig. 3 to 3C are sections The figure shows a reflective-transmissive liquid crystal display device according to a first embodiment of the present invention; FIG. 4A to FIG. 10C are cross-sectional views illustrating the manufacture of a reflective-transmissive liquid crystal display according to the first embodiment of the present invention. BRIEF DESCRIPTION OF THE DRAWINGS FIG. 11 is a cross-sectional view showing a first embodiment of a reflective-transmissive liquid crystal display device according to a first embodiment of the present invention. The figure shows a cross-sectional view according to the present embodiment of the reflective-transmissive liquid crystal display device according to the present invention. The cross-sectional view shows the display according to the present reflective-transmissive liquid crystal; "Analysis of the 14th to 14G of the specific embodiment According to a fourth specific example of the present invention, a method of manufacturing a reflective-transmissive liquid crystal display device is shown in Fig. 15.

Reflective-transmissive spectroscopy display device; and Μ 贳 10 10 15 20 Figure 16 is a cross-sectional view showing a reflective transmissive liquid crystal display device of a specific embodiment of the invention. DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS Hereinafter, a liquid crystal display device and a method of manufacturing the liquid crystal display device according to a preferred embodiment of the present invention will be described with reference to the accompanying drawings. Specific embodiment 1

3A to 3C are cross-sectional views showing a reflective transmissive liquid crystal display device according to the first embodiment of the present invention. The liquid crystal display of Figures 3A to 3C is placed. . Tongue_Amorphous germanium type thin film transistor having a bottom gate structure. The 3D diagram shows the display area where a thin film transistor is formed. Figures 3 and 3C show the gate pad area and the data pad area, respectively. > π 3rd to 3C, the gate wiring made of the first metal layer such as chromium (c〇 or aluminum^y1_can) is formed on the insulating substrate 100 made of glass, quartz or sapphire. The gate wiring includes a gate line extending in a first direction (not shown). 16 1260459 发明Inventive Description, according to the method, the buffer layer is made of tantalum nitride, or the organic material is formed on the transparent electrode and the reflection Between the electrodes, in this case, if the 7-electrode system is located below the reflective electrode, additional lithography is required to describe the buffer layer 幵> to connect the reflective electrode to the contact hole. This has been done 5 private car father is complicated. Preferably, in accordance with a specific embodiment of the present invention, the metal-containing metal layer pattern 128 is formed between the transparent electrode 124 and the reflective electrode 13, and the transparent electrode 124 is electrically coupled to the reflective electrode 13A. Thus, since the process of forming the contact holes connecting the reflective electrodes 13A to the drain electrodes 114 can be eliminated, at least one lithography process can be reduced by the conventional method. Further, according to the present embodiment, the gate pad electrode 25 and the data pad electrode 126 are made of the same layer of the transparent electrode 124. In the conventional method, the pad electrode is made of the same layer of the reflective electrode made of metal, so when the pad electrode of the LCD panel is connected to the external driver integrated package (1〇8) by the c〇G method. , causing metal corrosion, thus degrading the reliability of the liner. 15 However, in the specific embodiment, during the COG connection, since the pad electrodes 125 and 126 are made of the same layer of the transparent electrode 124 including the conductive oxide, the pad electrodes 125 and 126 are not corroded, and the lining is lifted. Pad reliability. 4A to 10C are cross-sectional views illustrating a method of manufacturing a reflection-transmission type liquid crystal display device according to a first embodiment of the present invention. Figures 20A, 5A, 6A, 7A, 8A, 9 and 1-8 show the display area in which a thin film transistor is formed. Figures 4B, 5B, 6B, 7B, 8B, 9B & 10B show the ambiguous area and the 4C, 5C, 6C, 7C, 8C, 9C and 10C charts show the tribute area. Referring to Figures 4A to 4C, the first layer is deposited to form a pattern by patterning the first layer after the inclusion of an insulating material (e.g., 19 1260459 玖, after the invention has been 10°) using the first photomask by the lithography layer. The first metal layer comprises a network having a thickness of about 5 (four) (coffee and thick (four) 0 Μ Μ 则 _ _). The inter-wiring includes a gate line extending in the 'direction (not shown), and the gate is branched by the inter-line And a gate pad connected to the end of the gate line for applying a scan voltage to the gate (10) 2". At this time, the sidewall of the gate 1〇2 is preferably tapered side. Referring to Figures 5 to 5C, A plasma enhanced chemical vapor deposition (PECVD) method is deposited on the entire surface of the substrate (10) (on which the gate wiring is formed) to a thickness of 45 GG, thereby forming an insulating layer (10). 10 15 20 Active layer such as amorphous The Shihua layer #PECVD method is deposited on the interlayer insulating layer ι〇6 ^ to a thickness of about 2000 angstroms, and then the resistive contact layer W-doped amorphous layer is deposited on the active layer by PECVD to a thickness of about 5 angstroms. The active layer and the resistive contact layer are patterned by a lithography method using a second photomask. The active pattern 108 and the resistive contact pattern 11A are respectively formed. The active pattern 108 is left at the gate 1〇2 of the gate insulating layer ι6. Referring to FIGS. 6A to 6C, the second metal layer is deposited on the resistive contact pattern 110. After the gate insulating layer 106 has a thickness of about 1500 to about 4000 angstroms, the second metal layer is patterned by a lithography method using a second photomask to form a data wiring. The second metal layer contains chromium (Cr), chrome ^ g (Cr-A1) or chromium_aluminum_chromium^Al-Cr). The data wiring includes a data line (not shown) extending in a second direction perpendicular to the first direction, the source/drain electrodes 112 and ι 4 of the data line branching, and the end of the data line for applying the image voltage to the source The data pad 115 of the pole 12. Subsequently, the resistive contact pattern 20 1260459 暴露 exposed by the source 112 and the drain Π 4 is removed by the reactive ion (IV) URIE method, and the active region between the source 112 and the drain 114 is used as the thin film transistor. 15 〇 channel area. At this time, the gate insulating layer 106 is interposed between the gate line and the data line, thereby preventing the gate line and the material line from coming into contact with each other. 5 In this specific example, 'active pattern 1G8, resistive contact pattern 11〇

The poor wiring is made using a two-mask. However, the active pattern 1〇8, the resistive contact pattern 110, and the source/drain 112/114 can be made using a single-mask as described in Korean Patent Application No. 1998-49710, thereby reducing the fabrication of a bottom gate structure. The number of reticle of the thin film transistor _ liquid crystal display device. The manufacturing method of such a thin 10-film transistor-liquid crystal display device will be described later using the same reference numerals as the specific embodiments.

First, the active layer, the resistive contact layer and the second metal layer are sequentially deposited on the gate insulating layer 106. After the photoresist layer is coated on the second metal layer, the photoresist layer is patterned by exposure and development to form a photoresist pattern (not shown), and the photoresist pattern package (4)-part, the second portion, and the three parts. The first P-knife has a first thickness and is formed on the channel region of the thin film transistor. The second portion ^ has a second thickness greater than the thickness of the first portion and is formed in the formation of the data wiring region. The third part is the area where the photoresist layer is not left. ...,: the second metal layer under the first Deng Deng, the resistive contact layer and the main 20-moving layer, the second metal layer below the first portion, and a portion of the thickness of the second portion are removed by the meal while forming the second The data layer consisting of a metal layer, the resistive contact pattern of the η amorphous layer, and the active pattern 108 composed of an amorphous layer. Next, remove the remaining photoresist pattern. Thus, the active pattern 1〇8, the child resistance contact pattern 11〇, and the source/no-pole system are simultaneously used. 21 1260459 玖, invention description Single mask is made. In the photo of Figs. 7A to 7C, the tantalum nitride is deposited on the entire surface of the substrate to form the thin film transistor 150 to a thickness of about 2 Å, whereby the passive passive layer 116 is formed. The inorganic passive layer 116 can increase the susceptibility of the transistor 15 and the pads 1〇4) and 115. In addition, the inorganic passive layer 116 enhances the bonding strength of the integrated circuit during subsequent COG bonding. Subsequently, the inorganic passive layer 116 and the gate insulating layer 1〇6 are etched and removed by a lithography method using a fourth photomask, thereby forming a fourth contact hole 117 for exposing the drain 114, for exposing the gate pad 1〇4. The second contact hole 118 and the third contact hole 119 for exposing the data pad 115. Referring to Figures 8A to 8C, a photosensitive organic material having a low dielectric constant is applied to the surface of the resulting structure including the fourth, second and third contact holes mm to a thickness of more than 2 μm, thereby forming an organic passive Layer GO. Since the organic passive layer 12 〇 can prevent parasitic capacitance between the data wiring and the pixel electrode 15 (to be formed), a pixel electrode can be formed, and the gate line and the data line can be stacked to form a thin film transistor having two aperture efficiencies. - Liquid crystal display device. A fifth mask (not shown) having a pattern corresponding to the first contact hole 122 is disposed over the organic passive layer 12G to form a first contact hole 122 extending through the organic passive layer (10), and the organic passive layer 12 and the drain ι 4 The upper part is exposed by the full exposure method with 20 and the clock layer 12G and the purchase (4) 4 and the upper part of the top of the pad. Next, the sixth photomask forming the microlens is not placed on the organic passive layer 120, and then the side of the contact layer 122 of the organic passive layer (10) is double-exposed by lens exposure processing. Subsequently, a solution including tetramethylammonium hydroxide (TMAH) was used to form a first contact hole 122 and a plurality of slits 1 by using a solution of 12 1260459 玖. The first contact hole 122 is extended by the fourth contact hole 117 to expose the pole. In this example, the organic passive layer 12〇 above the gate non-pad 104 and the data support pad 115 is partially removed. 5 ',,,: The post-ash is subjected to a hardening treatment at a temperature of about 130 to 230 C for about 100 minutes to reflow and harden the organic passive layer 120. Referring to Figures 9A through 9C, the organic passive layer 12 is subjected to an argon (Ar) plasma treatment to increase the adhesion between the organic passive layer 12 and the transparent conductive layer to be formed thereon. Next, a conductive material such as IT conductive transparent conductive layer 10 is deposited on the entire surface of the resulting structure at a temperature below about 2 °C. Preferably, the transparent conductive layer is between about 20 and about 15 (arc temperature deposited and having a thickness of about 4 angstroms. Subsequently, the transparent conductive layer is at about 10 (rc annealing is greater than 30 minutes and preferably 200t: annealing is about 1 to about 2 hours, 俾 enhance the uniformity of the pattern of the transparent conductive layer. 15 Then the hard conductive dry treatment of the transparent conductive layer is carried out at a temperature higher than 12 °C for more than 30 minutes, and the transparent conductive layer is improved. Subsequent to the adhesion of the photosensitive layer pattern formed by the lithography method, the transparent conductive layer is patterned by lithography and wet etching to form the transparent electrode 124. The transparent electrode 124 is via the first contact. The hole 122 is coupled to the 汲 2 114 114. At the same time, the gate pad electrode 125 and the data pad electrode 126 are formed. The gate pad electrode 丨 25 is connected to the gate pad 1 〇 4 via the second contact hole 118, the data lining The electrode 126 is connected to the data pad 115 via the third contact hole 119. Referring to FIG. 8 to FIG. 1 , the barrier metal layer is attached to about 20 to about i5〇t 23 1260459 玖, the invention description and the car father 5 0 C temperature is deposited on the resulting structure (including The entire surface of the transparent electrode 124 and the backing electrodes 125 and 126) is about 500 angstroms thick. The barrier metal layer comprises a metal such as molybdenum-tungsten (Mo_W), and the etching agent for etching the reflective layer constituting the reflective electrode has an etching rate. The etching rate of the reflective electrode is similar to that of the reflective electrode. 5 Then, on the barrier layer, the reflective layer composed of aluminum-germanium (Al-Nd) is formed at a temperature of about 2 Torr to about 150 ° C, preferably about 50 Å: a temperature of about 1500 Å. The layer is annealed at a temperature greater than about 1 Torr for more than about 3 minutes, preferably at about 2 〇〇〇c for more than 1 hour, and the anti-reflective layer is stripped during subsequent development. The reflective layer and the barrier metal layer are then removed. The pattern is formed by the lithography 10 and the wet etching method using the eighth mask, thereby forming the reflective electrode 13 and the resist metal layer pattern 128. 15 20 If the multilayer pixel electrode uses a transparent electrode as the lower electrode, when the photosensitive layer is used When the TMAH developing solution is developed to pattern the reflective layer, the reflective layer is easily peeled off due to the potential difference between the transparent electrode containing the oxide and the reflective layer. After the reflective layer is deposited, the reflective layer is about 2, and the temperature is annealed. ι to about 2 hours, the potential difference due to the oxide of the transparent electrode is reduced, and the reflective layer is prevented from being peeled off.

The figure η is a cross-sectional view showing a reflection-transmission type liquid crystal display device according to a second embodiment of the present invention. Referring to the ηth diagram, the reflection-transmission type according to the second embodiment, and the liquid crystal display device of the specific embodiment are the same as those of the specific embodiment. The difference between the second embodiment and the first embodiment is that the 'pole 124 is formed on the passive layer 12G (except for the first contact hole m). 24 1260459, the barrier metal layer pattern 128 and the reflective electrode 130 are described. It is formed on the first contact hole (2) and the transparent electrode 124. Thus, it directly contacts the thin film transistor 150 via the first contact hole 122; and the pole 114. The data wiring of the bungee m including the bungee m is made of a chromium-containing (Cr) metal film. The ruthenium oxide film is grown on the surface of the metal film. The chromium oxide film is easily removed by a D-ingering agent. Thus, when the transparent electrode 124 on the first contact hole 122 is removed by the wet etching method, the chromium oxide film formed on the surface of the drain electrode 114 is removed. In this case, the barrier metal layer pattern 128 and the reflective layer 130 directly contact the drain electrode 114, thereby enhancing the contact characteristics between the thin film transistor and the pixel electrode 10. At this time, since the transparent electrode 124 is directly connected to the reflective electrode 13 through the barrier metal layer pattern 128, the signal is usually transmitted from the thin film transistor to the pixel electrode. BEST MODE FOR CARRYING OUT THE INVENTION Fig. 12 is a cross-sectional view showing a reflection-transmission liquid crystal display device according to a third embodiment of the present invention. Referring to Fig. 12, the reflection-transmissive liquid crystal display of the third embodiment is the same as the first embodiment except for one. The difference between the third embodiment and the first embodiment is that the barrier metal layer pattern 128 and the second reflection source electrode 130 are formed only on the transparent electrode 124 except for the first contact hole 122. Therefore, since the reflective electrode 130 is directly connected to the transparent electrode 124 through the barrier metal layer pattern 128, the signal is usually transmitted from the thin film transistor to the pixel electrode. 25 1260459 DETAILED DESCRIPTION OF THE INVENTION Fig. 13 is a cross-sectional view showing a reflection-transmission type liquid crystal display device according to a fourth embodiment of the present invention. The liquid crystal display device of Fig. 13 includes an amorphous germanium film transistor having a top gate structure. Fig. 13 shows a pixel region in which an N-type thin film transistor (TFT) is formed in a 5-pixel region; and a driver region which forms an N-type TFT and a P-type τρτ in the driving region. Referring to Fig. 13, a sealing layer 2? 2 made of an oxide such as tantalum oxide is formed on an insulating substrate 2?2 of glass, quartz or sapphire. An active pattern 204 composed of an amorphous germanium is formed on the blocking layer 2〇2. A gate insulating layer 10 made of ytterbium oxide is formed on the active pattern 204 and the sealing layer 202. An N-type TFT gate 208 is formed on the pixel region of the gate insulating layer 206. The intersection of the active pattern 204 and the gate 208 becomes the channel region 212C of the N-type TFT. The active pattern 204 is divided into two parts by the channel region 212C. One portion of the active pattern 204 becomes the source region 212S and the other portion becomes 212D. 15 In its aspect, one portion of the active pattern 204 is the drain 212D, and another portion of the active pattern 204 is the source region 212S. Further, the capacitor lower electrode 209 is made of the same layer of the gate electrode 208 on the pixel region of the gate insulating layer 206. On the gate insulating layer 206 of the driver region, a gate 212 is formed which defines a source region 213S, a drain 213D, and a channel region 213C of the N-type TFT, and a gate 211 which defines a P-type TFT Source region 214S, drain 214D and channel region 214C. In this case, the source/drain of the N-type TFT can be made of a slightly doped drain (LDD) structure to improve transistor reliability. Reference numerals 212L and 213L denote LDD regions. The first interlayer dielectric layer 216 and the second interlayer dielectric layer 218 are sequentially formed on the gates 208, 2 10 and 211, the capacitor lower electrodes 2 〇 9 and the gate insulating layer 206. The first interlayer dielectric layer 216 is made of hafnium oxide, and the second interlayer dielectric layer 2 18 is made of a nitride such as nitride. Above the lower electrode 209 of the capacitor, the opening 220 exposing the first interlayer dielectric layer 216 5 is formed via the second interlayer dielectric layer 218. In addition, the contact hole 222 is via the first interlayer dielectric layer 216, the second interlayer dielectric layer 218, and the gate insulating layer 20ό above the source/germanary regions 212S and 212D of the pixel region, and the source region of the driving region. /> and the gate insulating layer 205 above the regions 213S, 213D, 214S and 214D are formed.

The source 224 and the drain 225 are formed on the second interlayer dielectric layer 218, and are respectively connected to the source and drain regions 2128 and 212D of the pixel region via the contact hole 222. In addition, the source 226 and the drain 227 are formed on the second interlayer dielectric layer 218, and are respectively connected to the source region and the germanium regions 213S and 213D of the ice type Ding in the driver region via the contact holes 222. In addition, the source 228 and the drain 229 are formed on the second interlayer dielectric layer 218, and thus are connected to the source region and the germanium regions 2148 and 214 of the driver region via the contact holes, respectively. The drain 225 of the 20-pixel region is also formed in the opening 22, and the electrode 209 is stacked under the capacitor, so that the stacked portion is provided as the upper electrode of the capacitor. [The interlayer dielectric layer 216 is used as the upper layer of the capacitor. The dielectric layer of the capacitor.

The buffer layer made of the conventional liquid crystal display device 'n+搀 矽 额外 is additionally formed under the active pattern, and then the buffer layer serves as the lower electrode of the capacitor. Thus, the upper electrode of the capacitor is made of the same layer of the gate. However, the present invention and the TU lower electrode 209 are made of the outer layer of the gate insulating layer for the dielectric layer of the capacitor 27 1260459 玖, the same layer of the invention description 208, and the drain 225 is used as the upper electrode of the capacitor, so no extra is needed. A deposition and etching method is used to form the lower electrode of the capacitor. Therefore, the manufacturing method is simplified. A passive layer 23 made of a photosensitive organic material is formed on the source and drain electrodes 224 5 , 225 , 226 , 227 , 228 , and 229 and the second interlayer dielectric layer 218 . The pixel electrode is formed on the passive layer 23, and is connected to the drain 225 through a via hole 232 formed in the passive layer 23 above the pixel region drain 225. The pixel electrode includes a transparent electrode 234 and a reflective electrode 238. The transparent electrode 234 contains a conductive oxide such as Ting, and the reflective electrode 238 is made of a metal such as aluminum-tantalum (AKNd). The barrier metal layer pattern 236 is formed between the transparent electrode 234 and the reflective electrode 238, and the galvanic corrosion prevention private metal layer pattern 236 is formed between the transparent electrode 234 and the reflective electrode 238. The metal pattern 236 is used to etch the reflective electrode 238. In the case of an etchant, the etching rate is equal to the rate at which the reflective drain 2 3 8 is used. Preferably, the barrier metal layer pattern 26 comprises 5 molybdenum tungsten (M〇-W)' patterned to have the shape of the same reflective electrode 238. As described above, since the barrier metal layer pattern 236 is formed between the transparent electrode 234 and the reflective electrode 23 8 , the transparent electrode 234 is electrically connected to the reflective electrode 23 8 to eliminate the contact for forming the connection of the reflective electrode 238 to the drain 225. The name of the hole is the method step. This simplifies the manufacturing process. 20 to 14G are cross-sectional views illustrating a method of fabricating a reflective-transmissive liquid crystal display device in accordance with a fourth embodiment of the present invention. Referring to Fig. 14A, cerium oxide is deposited by a PECVD method on a substrate 2 made of glass, quartz or superficial stone to a thickness of about 2 Å, thereby forming a sealing layer. The sealing layer 2〇2 can be skipped, but it is preferred to form the sealing layer 2〇2, which is 28 1260459 玖, and the invention is directed to prevent the impurities of the substrate from penetrating through the blocking layer 202 during the subsequent amorphous crystallization. Amorphous germanium layer. By the low pressure chemical vapor deposition (LPCVD) method or the pEc vd method, the amorphous germanium layer (not shown) having a thickness of about 500 angstroms is deposited on the blocking layer 2〇2, and the amorphous layer is borrowed from the amorphous layer. It is crystallized into a polycrystalline layer by laser annealing or oven annealing. The polysilicon layer is then patterned using the first photomask by the lithography method to form the active pattern 204. Referring to Fig. 14B, yttrium oxide is deposited on the active pattern 2?4 and the sealing layer 202 by a PECVD method to a thickness of about 1 angstrom, thereby forming a gate insulating layer 10206. After the gate of the θ aluminum-germanium (Al-Nd) is deposited on the gate insulating layer 2〇6 to a thickness of about 2500 angstroms, the TFT is partially opened in the driver region, and then the exposed gate is lithographically etched using the second mask. The method is surnamed and thus formed in the P-type TFT gate 211 of the driver region. Subsequently, the K impurity is implanted 15 by ion implantation, thereby forming the source region 214S and the germanium region 214D of the p-type TFT in the driver region. During the ion implantation process, the P+ impurity is not implanted in the gate 211, thus defining the channel region 214C of the active pattern 204. After the N-type TFTs are turned on in the pixel region and the driver region by the lithography method using the third mask, the exposed gate layer is etched to form a capacitor under the gate 2 209 and the ice gate 218. And 210. Then, N+ impurities are implanted by ion implantation, thereby forming source regions 212s and drains 212d of n, tFT in the pixel region, and source regions 2138 and drain electrodes 213D of the N-type TFTs in the driver region. During ion implantation, N+ impurities are not implanted in gates 20 8 and 210, thereby defining channel regions 212C and 213C in active pattern 204. In this case, ldd 1260459

发明, invention description Areas 212L and 213L are formed by ion implantation of N, but N is also formed by N-type TFTs. The transistor with LDD structure is completed. Referring to Fig. 14C, laser annealing or oven annealing, excitation of dopant ions in the source region and the wave region, and hardening of the damaged layer are performed. A first interlayer dielectric layer 216 comprising oxidized stone is then formed over the entire surface of the resulting structure to a thickness of about 1000 angstroms. Forming a second interlayer dielectric layer (10) comprising a nitrogen cut on the dielectric layer of the second interlayer dielectric layer 2 18 to a thickness of about 4000 angstroms, and then using a fourth mask to compile by lithography, thereby forming The opening 22 is exposed to expose the first interlayer dielectric layer 216 above the capacitor lower electrode 209. 10 Tea Photograph 14D FIG. 2, the second interlayer dielectric layer 218, the first interlayer dielectric layer 216, and the gate insulating layer 206 are sequentially etched by a lithography method using a fifth mask, thereby forming an exposed pixel region and a driver. Contact hole 222 of the source and the drain region of the region. After the data layer containing molybdenum-tungsten (Mo-W) is formed on the opening 220, the contact hole 15 222, and the second interlayer dielectric layer 218 to a thickness of about 3 〇〇〇, the data layer is used, and the mask is used. The source and drain electrodes 225 of the pixel region, the source 226 and the drain 227 of the N-type TFT are in the driver region, and the source 228 and the drain 229 of the P-type TFT are formed in the driver region by the lithography method. Source and drain electrodes 224, 225, 226, 227, 228, and 229 are coupled to the source and drain regions via contact holes 222, respectively. At this time, the drain electrode 225 of the pixel region is also formed at the opening 220, and the capacitor lower electrode 2〇9 is stacked, and thus the stacked portion is provided as the upper electrode of the capacitor. Referring to FIG. 14E, a photosensitive organic film is applied to the source and drain electrodes 224, 225, 226, 227, 228, and 229 and the second interlayer dielectric layer 218 to about 30 1260459. This forms the passive layer 230. In order to form the through hole 232 through the passive layer 230, after the seventh mask (not shown) corresponding to the through hole 232 is disposed on the passive layer 23, the passive layer 230 is used in the upper portion of the pixel region 225. The mask was initially exposed by the full exposure 5 method. Subsequently, after the eighth mask (not shown) forming the microlens is placed over the passive layer 230, a portion of the passive layer 23 (except for the via region) is double exposed by lens exposure using an eighth mask. Then, a wire-shirt treatment is performed using a TMAH-containing solution to thereby form a through hole 232 and a plurality of slits 233. The drain 225 of the pixel region is exposed through the via 232. Then, at about 13 (TC to about 230. 〇 temperature into β 10 仃 hardening treatment for about 100 minutes, reflow and harden the passive layer 23 〇. Referring to Figure 14F, the passive layer 230 is subjected to argon plasma treatment, and the organic layer is improved. Adhesion between the passive layer 230 and the transparent conductive layer to be formed thereon. The transparent conductive layer made of a conductive material (such as ΙΤ0) is formed at a temperature of less than 2 〇〇, and preferably about 20 to about 15 〇r. The holes 232 and the passive layer 23 are raised to a thickness of about 45 angstroms. The transparent conductive layer is then annealed at a temperature above 10 ° C for more than 30 minutes, and preferably at 20 (TC annealing is about 丨 to about 2 hours, 俾Improve the uniformity of the pattern of the transparent conductive layer. · Then dry the transparent conductive layer at a temperature higher than 12 〇. 〇 · · · · · · 大于 大于 大于 大于 大于 大于 大于 大于 大于 大于 大于 俾 俾 俾 俾 俾 俾 俾 俾 俾 俾 俾 俾 俾 俾 俾The adhesive method is formed on the photosensitive layer pattern, and the transparent conductive layer is patterned by lithography and wet etching using a ninth mask to form a transparent electrode 234. The transparent electrode 234 is via the through hole. Add _ bungee 225 to the pixel area. The barrier metal layer is formed on the entire surface of the structure including the transparent electrode 234. The barrier metal layer is made of a metal such as molybdenum-tungsten (M...W), and the metal is etched to form a reflection. The predetermined etchant of the layer has a etch rate similar to that of the reflective electrode. The barrier metal layer having a thickness of about 5 (10) angstroms is between about 20 and about 150X: and preferably about 5 Å. The 〇 temperature f 5 is formed. The aluminum-arc (Al-Nd) reflective layer is formed on the barrier metal layer to a thickness of about 2 angstroms at a temperature of about 20 to about 15 (rc and a temperature of about 50 ° C. The reflective layer is then higher than l 〇 (TC temperature annealing is greater than about 3 〇 minutes, and preferably annealed for about 1 hour at about 2 〇〇t, the anti-reflective layer is stripped during subsequent development. Subsequently, the reflective layer and the organic barrier layer are photographed using a tenth photomask. The pattern is formed by wet etching, thereby forming the reflective electrode 238 and the metal barrier layer pattern 236. The reflective electrode 23 8 directly contacts the transparent electrode 234. Specific Example 5 Figure 15 is a cross-sectional view showing the fifth according to the present invention. Reflective/transmissive liquid of a specific embodiment Display device. 15 Referring to Figure 15, the reflective-transmissive liquid crystal display device according to the fifth embodiment is the same as the fourth embodiment except for one. The fifth embodiment and the fourth embodiment The difference is that the transparent electrode is formed on the passive layer 230 (except the via 232), and the barrier metal layer pattern 236 and the reflective electrode 238 are formed on the via 232 and the transparent electrode 234, so that the via 20 is directly formed by the via 232. Contact with the drain 225 of the thin film transistor. DETAILED DESCRIPTION OF THE INVENTION Fig. 6 is a cross-sectional view showing a reflective-transmissive liquid crystal display device according to a sixth embodiment of the present invention. Referring to Fig. 16, a reflection-transmission type liquid according to a sixth embodiment 32 1260459 玖, the description of the invention is the same as the fourth embodiment, except for the - item. The sixth specific embodiment and the fourth specific per-reflection electric (10);: the difference is outside the barrier metal layer pattern. The transparent electrode 234 is formed on the transparent electrode 234. The transparent electrode and the reflective electrode are patterned using a diret. Preferably, the transparent electrode and the reflective electrode are patterned according to the present invention by using a single mask. 10 15 For example, after performing argon plasma treatment to improve the adhesion between the organic passive layer and the transparent layer, the transparent conductive layer The barrier metal layer and the reflective layer are sequentially formed on the obtained structure at an approximate temperature. In this case, the transparent conductive layer is made of IT0, and the metal resist layer and the reflective layer are respectively made of Mo-Wm. Then, the annealing treatment is performed at a temperature higher than about 鸠.c. The anti-reflection layer is peeled off after the subsequent development process, and the photosensitive layer is applied to the reflective layer. The second photosensitive layer uses a half-tone mask or slit. The mask is exposed and developed' thus formed in the transmission window and the reflection window having different thicknesses of the photosensitive layer. In the reflective layer and the barrier metal layer, the photosensitive layer pattern is used as the surname mask J, and the optical layer is used for ashing. The method or the dry method is partially removed to have a pre-tanning thickness. The transmissive window and the reflective window are formed simultaneously (10) when the transparent conductive layer is engraved by the rice, preferably by using the remaining portion of the photosensitive layer pattern as a surname mask. . The position of the bright electrode substantially coincides with the transmission window, and the reflective electrode is exposed through the reflective window. Therefore, the transparent electrode, the pad electrode, the barrier metal layer pattern and the reflective electrode are made according to the seventh embodiment of the present invention using a photomask , Borrow: 1260459 玖, invention instructions to reduce the number of reticle. The middle pole ΪΓΓ, in the multi-layer pixel with a transparent electrode as the lower layer, the electric electrode directly contacts the reflective electrode. It is better to prevent the generation of money between the transparent electrode The metal layer pattern is interposed between the transparent reflective electrodes. n The transparent electrode directly connects the reflective electrodes to eliminate the process of forming the contact holes connecting the reflective electrodes to the thin film transistors, so that the manufacturing process is simplified, especially since the multilayer photoelectrode can use a single mask.

It is preferably made of a semi-dimming mask or a slit mask, so that the manufacturing process can be further improved. Further, the reflective layer is detached from the reflective electrode of the multilayer pixel electrode of about 2 〇 (rC annealing at about 1 to about 2 hours to prevent (f having a transparent electrode as a lower layer). The same layer of the transparent electrode is formed, and when the liquid crystal display panel is connected to the external integrated circuit by the c〇G method, the metal corrosion is increased, and thus the reliability of the liner is increased. Although the invention has been clarified. Preferred embodiments of the present invention, but it is to be understood that the present invention is not limited to the preferred embodiments of the present invention, but rather the skilled person can make the essence and scope of the present invention within the scope of the patent application of the latter. Various changes and modifications. 20 [Simple description of the drawings] Figs. 1A to 1C are cross-sectional views showing a conventional reflection-transmissive liquid crystal display device; FIGS. 2A to 2C are cross-sectional views showing another conventional reflection-transmission liquid crystal. Display device; 34 1260459玖, invention description 10 15 FIGS. 3A to 3C are diagrams showing the reflective-transmissive liquid crystal display device according to the first and second embodiments of the present invention; “Beibeidi 4A to 10C” The picture shows the diagram According to a first embodiment of the present invention, a method of coating & reflecting a transmissive liquid crystal display device; and a sectional view showing a root reflection-transmission type liquid crystal display device; FIG. 12 is a 12th embodiment of a specific embodiment FIG. 13 is a cross-sectional view showing a reflective-transmissive liquid crystal display device of a specific embodiment of 豕+七明之乐4; and 14A to 14G aa. 2 (2) is a σ 彳 祝 祝 祝 祝 祝 祝 根据 根据 根据 根据 根据 根据 根据 根据 根据 根据 根据 根据 根据 根据 根据 根据 根据 根据 根据 根据 根据 根据 根据 根据 根据 根据 根据 根据 根据 根据 根据 根据 根据 根据 根据 根据 根据 根据 根据 根据A fifth embodiment of the reflective-transmissive liquid crystal display device; and a cross-sectional view showing a reflective-transmissive liquid crystal display device according to a sixth embodiment of the present invention. The main components of the figure represent a symbol table. ·Bungee 2 5...10% of the passive layer of the calendar. ······················································ · Active pattern 18.••Resistance contact 19 · ·. Data pad 2 0.·. source body pattern 26...organic passive layer 28' 34··. contact hole 30.··transparent electrode 3 2...buffer layer 33,35.·pad contact hole 3 6...reflection electrode 3 8... Gate pad electrode 35 1260459 玖, invention description 40.. data pad electrode 50.. substrate 51.. gate pad 52.. gate 5 4... gate insulating layer 55.. Crystal 56.. Active pattern 58.. Resistance contact pattern 59.. Data pad 6 0... Source 62.. . Datum 65.. Inorganic passive layer 6 6... Organic passive layer 68 .. Contact hole 69, 71... pad contact hole 70... reflective electrode 74.. gate pad electrode 76.. data pad electrode 100.. insulating substrate 102.. gate. .. brake pad 106.. brake insulating layer 108... active pattern 110.. resistive contact pattern 112, 114... electrode 115.. data pad 116.. inorganic passive layer 117, 118, 119, 122 ... contact hole 120.. organic passive layer 124.. transparent electrode 12 5... gate electrode 126.. data pad electrode 128.. barrier metal layer 13 0... reflective electrode 150.. . Thin film transistor 200.. Insulation substrate 202... blocking layer 204.. Active pattern 206.. Layers 208, 210, 211 ... gate 209 ·.. lower electrodes 212C, 213C, 214C ... channel regions 212D, 213D, 214D ... > and regions 212L, 213L ... LDD regions 212S, 213S, 214S Source 216, 218... Interlayer dielectric layer 220... Opening 222.. 妾 Touch 224, 226, 228... Source 225, 227, 229... Pole 230.. Passive layer 232.. . Through hole 234.. transparent electrode 236.. barrier metal layer pattern 238.. reflective electrode

36

Claims (1)

Ψ0!5% repair (more) original. One please Zhuli range brother 91113412 patent φ Gu main An I (four) 曱明 f application patent scope revision 95. 〇 5 1 _ kind of liquid crystal display device, including. A liquid crystal display device And comprising: a substrate having a region on which a pixel is formed, and a pad region located at a periphery of the display 5 tf region, wherein the display region has a transparent electrode, and the pad region has a pad electrode The transparent electrode and the pad electrode are made of the same layer, A metal layer is formed on the transparent electrode; and a reflective electrode is formed on the barrier metal layer and has a transmissive window exposing a portion of the transparent electrode. The liquid crystal display device of claim 1, further comprising a barrier metal layer pattern interposed between the transparent electrode and the reflective electrode, the barrier metal layer having substantially the same shape as the reflective electrode. 3. The liquid crystal display device of claim 2, wherein the barrier metal layer comprises a material having an etching rate substantially equal to a cooking rate of the reflective 15 electrode. 4. The liquid crystal display device of claim 1, wherein the transparent electrode comprises indium tin oxide (ITO), the reflective electrode comprises aluminum-germanium (A1_Nd), and the barrier metal layer pattern comprises molybdenum-tungsten ( 5. The liquid crystal display device of claim 1, wherein the pixel package 20 comprises an amorphous germanium type thin film transistor. 6. The liquid crystal display device of claim 1, wherein the pixel comprises a polysilicon. A thin film transistor. 7. A liquid crystal display device comprising: a substrate having a display area and a pad region on the side of the display area 37 1260459, which is patented; a thin film transistor formed on the substrate In the region, the thin film transistor 33 includes a gate, first and second electrodes, and an active pattern; a passive layer is formed on the thin film transistor and the substrate, the passive layer has a 5-hole exposed second electrode; and a transparent electrode Formed on the passive layer display area; a pad electrode is formed on the passive layer pad region, and the pad electrode is made of the same layer of the transparent electrode; The electrode is formed on the transparent electrode, and a transmission window 10 exposes a portion of the transparent electrode; and the barrier metal layer pattern is formed between the transparent electrode and the reflective electrode. The shape is the same as the shape of the reflective electrode. 8. As claimed in claim 7 The liquid crystal display device of the present invention, wherein the transparent electrode is formed on the hole and the passive layer, and is connected to the second electrode via the hole. The liquid crystal display device of claim 7, wherein the transparent electrode is formed only On the passive layer, except for the hole position; and the resistive metal layer pattern and the reflective electrode are formed on the hole and the transparent electrode' and thus are connected to the second electrode via the hole. 10. A liquid helium display device according to the seventh and right a_ of the patent application scope, wherein the barrier metal layer pattern and the reflective electrode shape are formed on the transparent electrode except for the hole position. 11 . The liquid crystal display device of the seventh aspect of the patent application, wherein the passive layer comprises an inorganic passive layer and the Gourd and the organic broken layer are stacked on the inorganic passive layer 38 1260459. 12. The liquid crystal display device of claim 2, wherein the organic passive layer is formed only on the display area, except for the pad area. A method for manufacturing a liquid crystal display device, the method comprising the steps of: forming a transparent conductive layer on a substrate, the substrate having a display region and a pad region surrounding the display region; forming a reflective layer having a transparent conductive layer On the substrate; the reflective layer is annealed to prevent the reflective layer from being peeled off; and the reflective layer is patterned to form a reflective electrode. 14. The method of manufacturing a liquid crystal display device according to claim 13, wherein the annealing step of the reflective layer is higher than about 1 〇 (the rc temperature is performed for more than about 30 minutes. 15) as claimed in claim 13 The method for manufacturing a liquid crystal display device, wherein the argon (Ar) plasma method performs enthalpy to improve the adhesion between the transparent conductive layer and the lower layer. 16. For example, the nth museum system of the patent application: raw, six 曰#一弘^ The step of the electrode on the pad area. ΠA method of manufacturing a liquid crystal display crystal display device according to claim 16 of the patent application, And a hard-baked dry transparent conductive layer for improving the south transparent conductive layer 39 1260459 Adhesive steps. 18. The method of manufacturing a liquid crystal display device according to claim 13, wherein the step of forming the reflective electrode is followed by the step of forming a transparent conductive pattern and simultaneously forming a transparent electrode on the display region and the two spacer regions. 7 19· As claimed in the patent scope, the reflective electrode and the cover are made. The method for manufacturing a liquid crystal display device of the 18th item, the transparent electrode and the pad electrode are a single light 10 15 20 2 〇. The method for manufacturing a liquid crystal display device according to claim 19 of the patent scope, /, the middle name mask is halftone Mask or slit mask. 21: The method of manufacturing a liquid crystal display device of claim 13, further comprising the step of depositing a barrier metal layer before the step of depositing the reflective layer. 22. The method of manufacturing a liquid crystal display device according to claim 21, wherein when the reflective layer is patterned to form a reflective electrode, the barrier metal layer is simultaneously patterned to form a barrier metal layer pattern. The method of manufacturing a liquid crystal display device according to claim 21, wherein the transparent conductive layer, the barrier metal layer, and the reflective layer are between about 20 C and about 15 Å. The temperature of the crucible is formed. A method of manufacturing a liquid crystal display device according to claim 21, wherein the barrier metal layer is made of a material having an etching rate similar to that of the reflective layer. 25. The method of manufacturing a liquid crystal display device according to claim 21, wherein the transparent conductive layer comprises indium tin oxide (ITO), a barrier metal layer 40 1260459 Pickup 26. 5 10 15 20 , Patent Application Scope Indium · Cast (Mo-W), and reflective layer containing aluminum ^ (A1_Nd). A method of manufacturing a liquid crystal display device, the method comprising the steps of: forming a gate on a substrate display area, and a gate pad on the substrate on a lining region surrounding the display region; forming a gate insulating layer, thereby forming the gate The insulating layer covers the gate and the gate pad; forming an active pattern and a resistive contact pattern on the gate insulating layer; forming a first electrode and a second electrode on the resistive contact pattern, and simultaneously forming a data pad a gate layer is provided on the insulating layer; a passive layer is formed on the first and second electrodes, the data pad and the gate insulating layer; and the passive layer is etched to form the first, second and third contact holes respectively for exposing a second electrode, a gate pad and a data pad; forming a transparent electrode in the display area, and simultaneously forming a gate pad electrode and a data pad electrode for respectively contacting the gate pad via the second and third contact holes And a data pad; sequentially forming a barrier metal layer and a reflective layer on the transparent electrode and the pad electrode; annealing the reflective layer to prevent peeling of the reflective layer; and reflecting the reflective layer To form a barrier metal layer pattern and a barrier metal layer reflective electrode patterning. A method of manufacturing a liquid crystal display device according to claim 26, wherein the active pattern comprises an amorphous germanium. The method of manufacturing a liquid crystal display device according to claim 26, wherein the active pattern, the resistive contact pattern, the first electrode, the second + pole, and the data pad use a single light Made of a cover. 29. The method of manufacturing a liquid crystal display device according to claim 26, wherein the passive layer comprises an inorganic passive layer and an organic passive layer stacked on the inorganic passive layer. 30. A method of fabricating a liquid crystal display device according to claim 29, wherein the organic passive layer of the pad region is removed in the passive layer engraving step to form first, second and third contact holes. The method of manufacturing a liquid crystal display device according to claim 26, wherein the transparent electrode is formed on the first contact hole and the passive layer, and the transparent electrode is coupled to the second electrode via the first contact hole. 32. The method of manufacturing a liquid crystal display device according to claim 26, wherein the transparent electrode is formed only on the passive layer, but the first contact hole is divided by 15 and the metal layer pattern and the reflective electrode layer are formed in the first The contact hole and the transparent electrode are thus coupled to the second electrode via the first contact hole. 33. The method of manufacturing a liquid crystal display device of claim 26, wherein the barrier metal layer pattern and the reflective electrode are formed only on the transparent electrode 20, except for the first contact hole. 34. The method of manufacturing a liquid crystal display device according to claim 26, wherein the step of forming the transparent electrode and the gate electrode and the data electrode further comprises the following steps: performing argon plasma treatment to enhance passive The layer and the transparent electrode 42 1260459 pick up, adhere to the patented range; form a transparent conductive layer on the first, second and third contact holes and the passive layer; anneal the transparent conductive layer to obtain the pattern of the transparent conductive layer 5 uniform; hard-baked transparent conductive layer to improve the adhesion of the transparent conductive layer; and the transparent conductive layer pattern. 35. The method of fabricating a liquid crystal display device of claim 26, wherein the step of annealing the reflective layer is performed for more than about 30 minutes. The method of manufacturing a liquid crystal display device of claim 26, wherein the transparent electrode, the pad electrode, the barrier metal layer pattern, and the reflective electrode are formed using a single mask. 15 37. A method for manufacturing a liquid crystal display, the method comprising the steps of: forming an active pattern on a substrate; forming a gate insulating layer on the substrate with an active pattern; forming a gate on the gate insulating layer Forming an active pattern position; 20 sequentially forming the first and second interlayer dielectric layers on the interpole and the closed insulating layer; etching the first and second interlayer dielectric layers and the gate insulating layer, and forming contact holes for respectively exposing The first and second regions of the active pattern; I into the first and second electrodes, which are respectively connected to the 43 1260459 via the contact holes, and the patent application scope is to the first and second regions; forming a passive layer in the first and the second a second electrode and a second interlayer dielectric layer having the first and second electrodes; etching the passive layer to form a through hole for exposing the second electrode; 5 forming a transparent electrode on the passive layer; sequentially forming a barrier metal layer And a reflective layer is annealed on the transparent electrode to prevent the reflective layer from being peeled off; and the reflective layer and the barrier metal layer are patterned, and the barrier metal layer and the reflective electrode are formed on the reflective layer. On the transparent electrode. 38. A method of fabricating a liquid crystal display device according to claim 37, wherein the active pattern is made of polycrystalline stone. 39. The method of manufacturing a liquid crystal display device according to claim 37, wherein in the step of forming a gate, in addition to the active pattern, the lower electrode of the capacitor is simultaneously formed on the gate insulating layer. 4 如 · The method for manufacturing a liquid crystal display device according to claim 3, wherein the step of forming the contact hole is performed before the second interlayer dielectric layer is exposed to the first layer above the lower electrode of the capacitor. Step 20 of the electrical layer 41' The method of manufacturing a liquid crystal display device according to claim 37 of the patent application is further included in the step of forming a contact hole, and etching the layer: layer is exposed to electricity + 1 ^. t K 42. A method of manufacturing a liquid crystal display device according to claim 37 of the patent application, 44 1260459, Patent Application No. 5, wherein the second electrode is formed to be stacked on the lower electrode of the capacitor. 43. A method of fabricating a liquid crystal display device according to claim 37, wherein the first interlayer dielectric layer comprises an oxide and the second interlayer dielectric layer comprises a nitride. The method of manufacturing a liquid crystal display device of claim 37, wherein the "Heil transparent electrode is formed on the hole and the passive layer, and thus is connected to the second electrode via the through hole. 45. The method of manufacturing a liquid crystal display device according to claim 37, wherein the transparent electrode is formed only on the passive layer, except for the via hole, and the pattern of the barrier metal layer and the reflective electrode layer are formed in the through hole and transparent. The electrodes are thus connected to the second electrode via vias. The method of manufacturing a liquid crystal display device according to claim 37, wherein the barrier metal layer pattern and the reflective electrode are formed only on the transparent electrode, except for the via hole. The method of manufacturing a liquid crystal display device according to claim 37, wherein the step of forming the transparent electrode and the gate pad electrode and the data pad electrode further comprises the steps of: arranging argon plasma treatment for lifting Adhesive between the passive layer and the transparent electrode; 20 forming a transparent conductive layer on the through hole and the passive layer; annealing through the sun and the moon to conduct | to obtain a uniform pattern of the transparent conductive layer; hard baked transparent conductive layer, used Improve the adhesion of the transparent conductive layer; and 45 1260459 pick up, the patented range of the transparent conductive layer pattern. 48. The method of fabricating a liquid crystal display device of claim 37, wherein the step of annealing the reflective layer is performed at a temperature above about 10 ° C for more than about 30 minutes. The method of manufacturing a liquid crystal display device of claim 37, wherein the transparent electrode, the pad electrode, the barrier metal layer pattern, and the reflective electrode are formed using a single photomask. 46