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TWI257695B - Connector for making electrical contact at semiconductor scales and method for forming same - Google Patents

Connector for making electrical contact at semiconductor scales and method for forming same Download PDF

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Publication number
TWI257695B
TWI257695B TW093137786A TW93137786A TWI257695B TW I257695 B TWI257695 B TW I257695B TW 093137786 A TW093137786 A TW 093137786A TW 93137786 A TW93137786 A TW 93137786A TW I257695 B TWI257695 B TW I257695B
Authority
TW
Taiwan
Prior art keywords
contact
connector
substrate
layer
contact element
Prior art date
Application number
TW093137786A
Other languages
Chinese (zh)
Other versions
TW200532880A (en
Inventor
Dirk D Brown
John D Williams
Eric M Radza
Original Assignee
Neoconix Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from US10/731,213 external-priority patent/US20050120553A1/en
Priority claimed from US10/731,669 external-priority patent/US7244125B2/en
Application filed by Neoconix Inc filed Critical Neoconix Inc
Publication of TW200532880A publication Critical patent/TW200532880A/en
Application granted granted Critical
Publication of TWI257695B publication Critical patent/TWI257695B/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/71—Means for bonding not being attached to, or not being formed on, the surface to be connected
    • H01L24/72—Detachable connecting means consisting of mechanical auxiliary parts connecting the device, e.g. pressure contacts using springs or clips
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R1/00—Details of instruments or arrangements of the types included in groups G01R5/00 - G01R13/00 and G01R31/00
    • G01R1/02—General constructional details
    • G01R1/06—Measuring leads; Measuring probes
    • G01R1/067—Measuring probes
    • G01R1/06711—Probe needles; Cantilever beams; "Bump" contacts; Replaceable probe pins
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R1/00—Details of instruments or arrangements of the types included in groups G01R5/00 - G01R13/00 and G01R31/00
    • G01R1/02—General constructional details
    • G01R1/06—Measuring leads; Measuring probes
    • G01R1/067—Measuring probes
    • G01R1/073—Multiple probes
    • G01R1/07307—Multiple probes with individual probe elements, e.g. needles, cantilever beams or bump contacts, fixed in relation to each other, e.g. bed of nails fixture or probe card
    • G01R1/07342—Multiple probes with individual probe elements, e.g. needles, cantilever beams or bump contacts, fixed in relation to each other, e.g. bed of nails fixture or probe card the body of the probe being at an angle other than perpendicular to test object, e.g. probe card
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01R—ELECTRICALLY-CONDUCTIVE CONNECTIONS; STRUCTURAL ASSOCIATIONS OF A PLURALITY OF MUTUALLY-INSULATED ELECTRICAL CONNECTING ELEMENTS; COUPLING DEVICES; CURRENT COLLECTORS
    • H01R12/00—Structural associations of a plurality of mutually-insulated electrical connecting elements, specially adapted for printed circuits, e.g. printed circuit boards [PCB], flat or ribbon cables, or like generally planar structures, e.g. terminal strips, terminal blocks; Coupling devices specially adapted for printed circuits, flat or ribbon cables, or like generally planar structures; Terminals specially adapted for contact with, or insertion into, printed circuits, flat or ribbon cables, or like generally planar structures
    • H01R12/50—Fixed connections
    • H01R12/51—Fixed connections for rigid printed circuits or like structures
    • H01R12/52—Fixed connections for rigid printed circuits or like structures connecting to other rigid printed circuits or like structures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01R—ELECTRICALLY-CONDUCTIVE CONNECTIONS; STRUCTURAL ASSOCIATIONS OF A PLURALITY OF MUTUALLY-INSULATED ELECTRICAL CONNECTING ELEMENTS; COUPLING DEVICES; CURRENT COLLECTORS
    • H01R12/00—Structural associations of a plurality of mutually-insulated electrical connecting elements, specially adapted for printed circuits, e.g. printed circuit boards [PCB], flat or ribbon cables, or like generally planar structures, e.g. terminal strips, terminal blocks; Coupling devices specially adapted for printed circuits, flat or ribbon cables, or like generally planar structures; Terminals specially adapted for contact with, or insertion into, printed circuits, flat or ribbon cables, or like generally planar structures
    • H01R12/70—Coupling devices
    • H01R12/71—Coupling devices for rigid printing circuits or like structures
    • H01R12/712—Coupling devices for rigid printing circuits or like structures co-operating with the surface of the printed circuit or with a coupling device exclusively provided on the surface of the printed circuit
    • H01R12/714—Coupling devices for rigid printing circuits or like structures co-operating with the surface of the printed circuit or with a coupling device exclusively provided on the surface of the printed circuit with contacts abutting directly the printed circuit; Button contacts therefore provided on the printed circuit
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01R—ELECTRICALLY-CONDUCTIVE CONNECTIONS; STRUCTURAL ASSOCIATIONS OF A PLURALITY OF MUTUALLY-INSULATED ELECTRICAL CONNECTING ELEMENTS; COUPLING DEVICES; CURRENT COLLECTORS
    • H01R13/00—Details of coupling devices of the kinds covered by groups H01R12/70 or H01R24/00 - H01R33/00
    • H01R13/02—Contact members
    • H01R13/03—Contact members characterised by the material, e.g. plating, or coating materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01R—ELECTRICALLY-CONDUCTIVE CONNECTIONS; STRUCTURAL ASSOCIATIONS OF A PLURALITY OF MUTUALLY-INSULATED ELECTRICAL CONNECTING ELEMENTS; COUPLING DEVICES; CURRENT COLLECTORS
    • H01R13/00—Details of coupling devices of the kinds covered by groups H01R12/70 or H01R24/00 - H01R33/00
    • H01R13/02—Contact members
    • H01R13/22—Contacts for co-operating by abutting
    • H01R13/24—Contacts for co-operating by abutting resilient; resiliently-mounted
    • H01R13/2407—Contacts for co-operating by abutting resilient; resiliently-mounted characterized by the resilient means
    • H—ELECTRICITY
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    • H01R—ELECTRICALLY-CONDUCTIVE CONNECTIONS; STRUCTURAL ASSOCIATIONS OF A PLURALITY OF MUTUALLY-INSULATED ELECTRICAL CONNECTING ELEMENTS; COUPLING DEVICES; CURRENT COLLECTORS
    • H01R13/00—Details of coupling devices of the kinds covered by groups H01R12/70 or H01R24/00 - H01R33/00
    • H01R13/02—Contact members
    • H01R13/22—Contacts for co-operating by abutting
    • H01R13/24—Contacts for co-operating by abutting resilient; resiliently-mounted
    • H01R13/2464—Contacts for co-operating by abutting resilient; resiliently-mounted characterized by the contact point
    • H01R13/2492—Contacts for co-operating by abutting resilient; resiliently-mounted characterized by the contact point multiple contact points
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01R—ELECTRICALLY-CONDUCTIVE CONNECTIONS; STRUCTURAL ASSOCIATIONS OF A PLURALITY OF MUTUALLY-INSULATED ELECTRICAL CONNECTING ELEMENTS; COUPLING DEVICES; CURRENT COLLECTORS
    • H01R43/00—Apparatus or processes specially adapted for manufacturing, assembling, maintaining, or repairing of line connectors or current collectors or for joining electric conductors
    • H01R43/007—Apparatus or processes specially adapted for manufacturing, assembling, maintaining, or repairing of line connectors or current collectors or for joining electric conductors for elastomeric connecting elements
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00—Apparatus or processes for manufacturing printed circuits
    • H05K3/40—Forming printed elements for providing electric connections to or between printed circuits
    • H05K3/4092—Integral conductive tabs, i.e. conductive parts partly detached from the substrate
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K7/00—Constructional details common to different types of electric apparatus
    • H05K7/02—Arrangements of circuit components or wiring on supporting structure
    • H05K7/10—Plug-in assemblages of components, e.g. IC sockets
    • H05K7/1053—Plug-in assemblages of components, e.g. IC sockets having interior leads
    • H05K7/1061—Plug-in assemblages of components, e.g. IC sockets having interior leads co-operating by abutting
    • H05K7/1069—Plug-in assemblages of components, e.g. IC sockets having interior leads co-operating by abutting with spring contact pieces
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R3/00—Apparatus or processes specially adapted for the manufacture or maintenance of measuring instruments, e.g. of probe tips
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001—Core members of the connector
    • H01L2224/45099—Material
    • H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/45144—Gold (Au) as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/32—Holders for supporting the complete device in operation, i.e. detachable fixtures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/00014—Technical content checked by a classifier the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01013—Aluminum [Al]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01014—Silicon [Si]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01028—Nickel [Ni]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
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    • H01L2924/01029—Copper [Cu]
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    • H01L2924/01082—Lead [Pb]
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    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/102—Material of the semiconductor or solid state bodies
    • H01L2924/1025—Semiconducting materials
    • H01L2924/10251—Elemental semiconductors, i.e. Group IV
    • H01L2924/10253—Silicon [Si]
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    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
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    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/19—Details of hybrid assemblies other than the semiconductor or other solid state devices to be connected
    • H01L2924/1901—Structure
    • H01L2924/1904—Component type
    • H01L2924/19041—Component type being a capacitor
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    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/19—Details of hybrid assemblies other than the semiconductor or other solid state devices to be connected
    • H01L2924/1901—Structure
    • H01L2924/1904—Component type
    • H01L2924/19042—Component type being an inductor
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    • H01L2924/30107—Inductance
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    • H01L2924/301—Electrical effects
    • H01L2924/3011—Impedance
    • H—ELECTRICITY
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    • H01R—ELECTRICALLY-CONDUCTIVE CONNECTIONS; STRUCTURAL ASSOCIATIONS OF A PLURALITY OF MUTUALLY-INSULATED ELECTRICAL CONNECTING ELEMENTS; COUPLING DEVICES; CURRENT COLLECTORS
    • H01R43/00—Apparatus or processes specially adapted for manufacturing, assembling, maintaining, or repairing of line connectors or current collectors or for joining electric conductors
    • H01R43/20—Apparatus or processes specially adapted for manufacturing, assembling, maintaining, or repairing of line connectors or current collectors or for joining electric conductors for assembling or disassembling contact members with insulating base, case or sleeve
    • H01R43/205—Apparatus or processes specially adapted for manufacturing, assembling, maintaining, or repairing of line connectors or current collectors or for joining electric conductors for assembling or disassembling contact members with insulating base, case or sleeve with a panel or printed circuit board
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00—Apparatus or processes for manufacturing printed circuits
    • H05K3/30—Assembling printed circuits with electric components, e.g. with resistor
    • H05K3/32—Assembling printed circuits with electric components, e.g. with resistor electrically connecting electric components or wires to printed circuits
    • H05K3/325—Assembling printed circuits with electric components, e.g. with resistor electrically connecting electric components or wires to printed circuits by abutting or pinching, i.e. without alloying process; mechanical auxiliary parts therefor
    • H05K3/326—Assembling printed circuits with electric components, e.g. with resistor electrically connecting electric components or wires to printed circuits by abutting or pinching, i.e. without alloying process; mechanical auxiliary parts therefor the printed circuit having integral resilient or deformable parts, e.g. tabs or parts of flexible circuits

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  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Coupling Device And Connection With Printed Circuit (AREA)
  • Testing Of Individual Semiconductor Devices (AREA)
  • Measuring Leads Or Probes (AREA)

Abstract

A connector for electrically connecting to pads formed on a semiconductor device includes a substrate and an array of contact elements of conductive material formed on the substrate. Each contact element includes a base portion attached to the top surface of the substrate and a curved spring portion extending from the base portion and having a distal end projecting above the substrate. The curved spring portion is formed to curved away from a plane of contact and has a curvature disposed to provide a controlled wiping action when engaging a respective pad of the semiconductor device.

Description

1257695 九、發明說明： 【發明所屬之技術領域】 本發明係關於可重複連接、可重複裝設之電連 ， 尤其關於連接半導體級裝置之電連接器。 【先前技術】 夕電互連（interconnects)或連接器用以將兩個 ς電子組件連接在-起，或將—電子組件連接至 ，，例如電腦、路由器或測試器。舉例而言，電用^ ΪΪ—Ϊ子組件’如積體電路（iC或晶片），至―印刷電 嫩接，使得其^ 的互連裝置將經封裝的微處驾。晶片;分離 晶片。爭的曰曰片可輕易移除’或者可輕易安褒升級 (P_e)」或「㈣二糊㈣翻通常稱為「探針 她獅測試。探:i二0匕㈣)」’且-般用在製程 試器至梦晶圓的電連接，般裝錄測試器上，提供從測 上的:屬墊接^ ’直接€連接形成於石夕晶圓 s 、. ds)°此類的電連接器通當猶盏「控乂丄 電路的功能性m 以測試形成在晶®上的個別積體 疋否符合特定參數的限制。 4SHAW/04002TW/N E0 1257695 傳統電連接器通常由模鍛（stamped)金屬彈簧製成， 其形成後接著個別插入一絕緣載體，以形成電連接元件陣 列。其他製作電連接器的方法包含使用等向的導電黏著 劑、射出成型導電黏著劑、束線導電元件、打線 (wirebonding)技術形成的彈簧、以及小金屬塊。、、 基板栅格陣列（land grid array，LGA)意指金屬墊 (亦稱基板(lands))陣列，以作為積體電路封装、印刷 電路板、或其他電子組件的電接觸點。金屬塾通常利用薄# 膜沉積技術形成，並塗佈金以提供不氧化 (non-oxidizing)表面。球栅格陣列（baU狀记町驭， BGA)意指焊料球（SC)lder balls)或焊料凸塊㈤齡 b_s) _ ’以作為積體電路封裝的電接觸點。基板拇 格陣列和球栅格陣列兩者皆廣泛使用於半導體業，且各 其相關優點或缺點。舉例而言，一般製作基板拇格陣列封 裝比球柵格陣列縣便宜，_無_成焊料球或焊料凸 塊。然而’基板柵格陣列封裝一般較難組裝至pc板或多 晶片模組上。通常利用基板柵格陣列連接器，提供連接至m pc板或晶片模組之基板栅格障列封裝，可移除且可重複 設之插座（socketing)能力。 、 半導體科技之進步朝向半導體積體電路中的尺寸縮 二二4寸？疋’縮小石夕晶粒(die)或半導體封裝上接 =距iP1地)。節距，即半導體裝置上各電接觸點 (亦減接腳（lead)」）_間隔，其在某些應用中劇 4SH AW/04002TW/N E0 1257695 烈減少。舉例而言，半導體 或更少的節距⑷觸=250微米 叩貝。當半導體裝置上接觸塾的節困難且非常 =要同時連接一陣列中的多個接觸;甚下至 裝上以或基板柵格陣列封 =重=擦到(_ng)動作和;人 圖wti = Γ，否__可驗靖電連接。 1 ，用以接合基板上的金屬墊。參照圖 全H = 件12，供電連接至基板14上之 ^ G可為晶®探針卡，難觸元件12為 =’供接合石夕基板M上之塾16。在正常處理 金眉執膜18 (其可為氧化物膜或有機膜）形成在 rf墊16的表面上。當接觸元件12接合金屬墊16，接觸 几件必須&穿入膜18，以形成到金屬墊16之可靠電連接。 膜P之牙入可源自接觸元件接合金屬塾時，接觸元件12 之擦刮動作或穿入動作。 當需要提供擦刮或穿入動作時，重要的是具有受良好 控制的擦刮或穿入動作，在製作墊接觸時，使其夠強以穿 過表面膜，但夠柔以避免傷害金屬墊。此外，重要的是任1257695 IX. DESCRIPTION OF THE INVENTION: FIELD OF THE INVENTION The present invention relates to reconnectable, re-installable electrical connections, and more particularly to electrical connectors for connecting semiconductor-scale devices. [Prior Art] Interconnects or connectors are used to connect two electronic components, or to connect electronic components to, for example, a computer, router or tester. For example, the electrical components, such as the integrated circuit (iC or wafer), are printed to the printed circuit so that the interconnecting device of the device will be packaged. Wafer; separate wafer. The battle piece can be easily removed 'or can be easily upgraded (P_e) or "(4) two paste (four) turn usually called "probe her lion test. Detective: i 2 0 (4))" and - like Used in the electrical connection of the process tester to the dream wafer, on the general tester, it is provided from the test: the pad is connected to the 'direct direct connection formed on the stone s wafer s, ds) ° such electricity The connector is still "speaking the functionality of the control circuit m to test whether the individual integrated bodies formed on the Crystal® meet the limits of specific parameters. 4SHAW/04002TW/N E0 1257695 Traditional electrical connectors are usually swaged ( Stamped) metal springs, which are formed by inserting an insulating carrier individually to form an array of electrical connection elements. Other methods of making electrical connectors include the use of isotropic conductive adhesives, injection molded conductive adhesives, and beam-line conductive components. A spring formed by a wirebonding technique and a small metal block. A land grid array (LGA) means a metal pad (also referred to as a lands) array for packaging and printing as an integrated circuit. Electrical contact points for boards, or other electronic components Metal ruthenium is typically formed using a thin film deposition technique and coated with gold to provide a non-oxidizing surface. Ball grid arrays (BAU 记 驭, BGA) means solder balls (SC) lder balls) or Solder bumps (five) age b_s) _ 'to be used as electrical contacts for integrated circuit packages. Both substrate thumb grid arrays and ball grid arrays are widely used in the semiconductor industry, and their associated advantages or disadvantages. For example, Generally, the substrate thumb array package is cheaper than the ball grid array county, and the substrate grid array package is generally difficult to assemble onto the pc board or the multi-chip module. Grid array connector that provides a substrate grid barrier package that is attached to an mpc board or wafer module, with removable and repeatable socketing capabilities. Progress in semiconductor technology is moving toward semiconductor integrated circuits Dimensions are reduced by two or four inches? 疋 'Reduce the die or die on the semiconductor package = iP1 ground.) Pitch, that is, the electrical contact points on the semiconductor device (also reduce the lead) _ Interval, which plays 4SH A in some applications W/04002TW/N E0 1257695 Strong reduction. For example, a semiconductor or less pitch (4) touch = 250 micron mussels. When the semiconductor device is in contact with the crucible, it is difficult and very = to connect multiple contacts in an array at the same time; even to mount or the substrate grid array seal = weight = wipe to (_ng) action and; human figure wti = Hey, no __ can be connected to Jingdian. 1 , used to bond metal pads on the substrate. Referring to the figure, all H = 12, the power supply to the substrate 14 can be a Crystal® probe card, and the hard-to-touch element 12 is =' for bonding to the 塾16 on the substrate M. In the normal processing, a gold eyebrow film 18 (which may be an oxide film or an organic film) is formed on the surface of the rf pad 16. When the contact element 12 engages the metal pad 16, the contacts must be & penetrate the film 18 to form a reliable electrical connection to the metal pad 16. The intrusion of the film P may result from a wiping action or a penetrating action of the contact element 12 when the contact element engages the metal crucible. When it is necessary to provide a wiping or penetrating action, it is important to have a well-controlled wiping or penetrating action to make it strong enough to pass through the surface film when making the pad contact, but soft enough to avoid damage to the metal pad. . In addition, it is important that

4SHAW/04002TW/NEO 1257695 何擦刮動作提供-足夠的擦刮距離’以暴露足夠 面，而有良好的電連接。 ”屬表 類似地，製作接觸至焊料球（如形成在球拇格 裝、晶片級封裝、或晶圓級封裝上的焊料球）時，重的 是提供擦刮或穿人動作，以突破焊料球上_生氧化声 Uative oxide) ’以製造良好電接觸至焊料球。然: s使用傳統方法來製造電接觸至焊料球時，可能傷宝+ 全從封裝齡料球。目2A麻-綱元件，用以= 谭料球。當接觸元件12接觸形成在例如供測試之 上的焊料球22時，接觸元件12彻穿人動作，通 焊料球之頂表面（亦稱基[base]表&)4SHAW/04002TW/NEO 1257695 How the wiping action provides - sufficient wiping distance 'to expose enough surface with good electrical connection. Similarly, when making contact with a solder ball (such as a solder ball formed on a ball or a wafer-level package, or a wafer-level package), it is important to provide a scratch or wear action to break through the solder. "Umantic oxide" on the ball 'to make good electrical contact to the solder ball. Of course: s using traditional methods to make electrical contact to the solder ball, may damage the treasure + all from the package age of the ball. Element for = tan ball. When the contact element 12 contacts the solder ball 22 formed, for example, on the test, the contact element 12 wears through the human body, passing the top surface of the solder ball (also known as the base [base] table &;)

料球22之基板2g接著依附於另^ 料體衣置（如pc板或晶片級封幻，焊料球22中的凹 坑會導致焊料球介面形成空洞（v〇id)。圖2B 示使焊料球22依附於基板24之金屬墊％的結果。在^ (solder reflow)後（圖2C)，烊料球22依附至 26。然而’在焊料球介面形成—空洞，因為凹坑出 現在㈣球22之頂表面上，此凹坑·_元件η之穿 造:/ί類空洞的出現可影響連接的電特性，且更 重要地，降低連接的可靠度。 ，此’期望提供—種電接槪件，其可提供控 糾f倾金屬墊上，特別是節距小於50微米的墊。亦 期i此挺觸作提供達5嶋觸墊的制轉。此外，當The substrate 2g of the ball 22 is then attached to another body coating (such as a pc board or wafer level masking, and the pits in the solder ball 22 cause voids in the solder ball interface. Figure 2B shows the solder The ball 22 is attached to the result of the metal pad % of the substrate 24. After the solder reflow (Fig. 2C), the ball 22 is attached to 26. However, 'the hole formed in the solder ball interface-cavity because the pit appears in the (four) ball On the top surface of the 22, the fabrication of the pit _ component η: the presence of a void can affect the electrical characteristics of the connection and, more importantly, reduce the reliability of the connection. This is expected to provide an electrical connection. A piece of material, which can be provided with a control pad, especially a pad having a pitch of less than 50 micrometers. In the meantime, the touch is provided to provide a turn of up to 5 inches of touch pad.

4SHAW/04002TW/NEO 1257695 的^連=遭遇的另—個問題是共面性 Ί及欲連接之半導體裝置之觸_位置失準 inr=舉例Μ，半導體晶圓和封裝製程中 —^ ’ 接觸點（金屬塾或焊料球）最終位置、每Another problem encountered by 4SHAW/04002TW/NEO 1257695 is the coplanarity and the contact of the semiconductor device to be connected. Positional error inr=Example, semiconductor wafer and packaging process—^ ' Contact point (metal enamel or solder ball) final position, per

接觸點接觸點陣列中’位置失準導致不同 ^置的差異。因此，連接器必須可適應源自 右，、立置差異，以適用在大部分應用中。所以，期望具 尺寸可縮放（SCalable)的電接觸元件，其 而能夠容忍共面性之正常差異以及接觸J 電連接予半導體裝置的連接器或互連系統屬已 、，牛例而έ，於2000年3月7日核准給Eldridge等人 之果國專利6, 032, 356號，揭露彈性接觸結構之陣列，其 =直接衣δ又於半導體晶圓之焊墊（b〇nding pa(j)上。接觸 、=構係+藉以下形成：附接金接合線至晶圓，塑形接合線， f接著塗覆（overcoating)接合線，以形成複合 jcoraposUe)接觸元件。雖然Eldridge揭露的方法，提 供半導體級之全金屬接觸陣列，其中一次形成一個接觸元 件，因此接觸元件需要昂貴的系列製程。此外，接觸結構 固有的尖形（pointy Shape)導致在製造接觸時，穿入動 作易於傷害如焊料球之接觸點。The positional misalignment in the array of contact point contacts results in a difference in the difference. Therefore, the connector must be adaptable to the right, stand-up differences to suit most applications. Therefore, it is desirable to have a size-adjustable (SCalable) electrical contact element that can tolerate the normal difference in coplanarity and the connector or interconnect system that contacts the J electrical connection to the semiconductor device. Patent No. 6,032,356 issued to Eldridge et al., issued on March 7, 2000, discloses an array of elastic contact structures, which is a direct coating δ and a semiconductor wafer pad (b〇nding pa(j) The contact, = structure + is formed by attaching a gold bond wire to the wafer, shaping the bond wire, and then overcoating the bond wire to form a composite jcoraposUe) contact element. Although Eldridge discloses a method that provides a semiconductor-scale all-metal contact array in which one contact element is formed at a time, contact elements require an expensive series of processes. In addition, the pointy shape inherent to the contact structure causes the penetration action to be susceptible to damage such as the contact point of the solder ball when making contact.

4SHAW/04002TW/NEO 1257695 於2001年2月6日核准給Smith等人之美國專利 6,184, 065號，揭露由薄金屬膜中的固有應力梯度（stress gradient)創造的小金屬彈簧。smith的方法提供半導體 級的全金屬接觸陣列。然而，金屬彈簧指入欲接觸之平面 表面，因此當用以探測（pr〇be)焊料球時，易於傷害 料球。 、口 於2001年6月26日核准給Khoury等人之美國專利 6,250,933 f虎，揭露一種接觸結構.，其係藉微製造 (microfabrieation)科技在—半導縣板或其他介電 上產生接觸器，且其中每一接觸器形狀像一橋，具有一或 =P〇rti〇n)支撐-水平接觸部。Kh〇ury ^方法祕挪體級之全金屬__， 金 ^ 元件和金屬墊平行，僅提供有限的擦: ί枯=擦Γ作，處理缺乏擦刮之醜。然而，=U.S. Patent No. 6,184,065, issued to Smith et al. Smith's method provides a semiconductor-grade all-metal contact array. However, the metal spring is pointed into the planar surface to be contacted, so when used to detect (pr〇be) the solder ball, it is easy to damage the ball. U.S. Patent 6,250,933 F, which was approved by Khoury et al. on June 26, 2001, discloses a contact structure that uses microfabrieation technology to create contactors on semi-conductor plates or other dielectrics. And each of the contactors is shaped like a bridge with one or = P〇rti〇n) support-horizontal contacts. Kh〇ury ^ method secrets the whole body of the metal __, gold ^ components and metal pads parallel, only provide a limited rub: ί dry = wipe the work, dealing with the lack of scratch ugly. However, =

尺寸的是，此種方式可提供只有接觸之整體 職更少的_距離，對良好電連接而言通常J 球陣列平行，Kh_y ，因 會導致焊料球基表面上的傷害，、盆接i 胃在後娜啸顯物_成，蝴細矛接者 導體裝 總結而言’傳鱗接器使物伽尺寸的半The size is that this way can provide only _ distance for the overall contact of the contact, for a good electrical connection, usually the J ball array is parallel, Kh_y, because it will cause damage on the surface of the solder ball base, potted i stomach In the post-Nana sensation _ into, the butterfly spears are connected to the conductor assembly summary, 'the scaly connector makes the gamma size half

4SHAW/04002TW/NEO -10- 1257695 a符要求。傳統連接在提供擦刮/穿人動作而不傷害 >;斗球之基表面的接觸點方面，亦不符要求。 【發明内容】 辦1ί㈣—實施例，—連接器供電連接形成於-半 帝材之墊，係包含—基板，以及形成於基板上之導 二，觸70件陣列。每一接觸元件包含依附於基板之頂 f面的—基部（―portion)’以及—曲彈簧部係自λ 末端(d—1 end)突出於基板之上。曲 二，力為攸—接觸平面、彎開（贿e _)，並具有 率，當接合半導體裝置之一個別墊時 控制的擦到動作。 別糾用咕供一文 的連之另—方面，—種形成包含接觸元件陣列 ^ 包含^供―基板，形成—支撐層於基 撐元件:切私·—支撐元件_，等向敍刻支 = 縣—支撐糾頂场顧肖（_ided 及圖案化層=板^支撐元件陣列上，以 件包含—第列，其中每一接觸元 二;一個別支稽元件之頂部。此』更 個包含陣1。如此形成之接觸元件陣列之每-並具有從基部延伸、 形成為具有-凹（⑽^)^縣板表面，曲彈簧部4SHAW/04002TW/NEO -10- 1257695 a symbol requirement. Conventional connections do not meet the requirements for providing a wiping/wearing action without harming the contact points of the base surface of the ball. SUMMARY OF THE INVENTION [1] (4) - The embodiment, the connector power supply connection is formed in the - semi-prime pad, comprising a substrate, and a guide formed on the substrate, touching 70 arrays. Each of the contact elements includes a -portion attached to the top surface of the substrate and a curved spring portion projecting from the λ end (d-1 end) over the substrate. In the second, the force is 攸—contact plane, bend open (bribe e _), and has a rate of control when the individual pads of the semiconductor device are bonded. Do not use 咕 for the other side of the article - the formation of the array comprising contact elements ^ contains ^ for the substrate, forming - the support layer in the base support: private - support elements _, isotropic quotation = County - supporting the correction field Gu Xiao (_ided and patterned layer = board ^ support element array, the piece contains - the first column, each contact element two; one of the other components of the top. This is more included array 1. Each of the array of contact elements thus formed has a portion extending from the base and formed to have a concave ((10)^) plate surface, a curved spring portion

4SHAW/04002TW/NEO -11 ^ 1257695 ίΐΓ牧另—方面’—種形成包含—細元件陣 著声於姑t的方法，包含：提供—基板，提供一導電黏 “以it成一支撐層於導電黏著層上，圖案化支 ^-/iL撑70件相，等向侧支樓元件陣列以在 j上形成圓角，形成—金屬層於導電黏著層 二觸’二15丨列ί ’圖案化金屬層與導電黏著層以定義 -導°母—接觸元件包含—第—金屬部形成於 元件陣列。g叙頂和此方法更包含移除支撐 t此，成之接觸元件_的每—個包含：—基部依附 -上。相對基 笠邻從美邦歸部依附於基板；卩及一曲彈 Κ敎基视伸、亚具有一末端突出於基板之 板表面’曲彈簣部形成為具有-凹曲率。 考慮以下詳細說明與所附圖式時，會更了解本發明。 【實施方式】 根據本發明之原理，—種提供 連接至一裝置的連接器，包含—接觸元件陣列 才ϋί中^接^件包含—曲彈簧部形成為從二接i 提供二㈣，當接合裝置之—接觸點時，用以 ，、 祭刮動作。本發明之連接器可用以電連接4SHAW/04002TW/NEO -11 ^ 1257695 ΐΓ ΐΓ 另 — 方面 方面 方面 — — — — — — — — — — — — — — 细 细 细 细 细 细 细 细 细 细 细 细 细 细 细 细 细 细 细 细 细 细 细 细 细 细 细 细 细 细 细 细On the layer, the patterned support ^-/iL supports 70 pieces of phase, and the array of the isotropic side branch elements is rounded on the j to form a metal layer on the conductive adhesive layer two-touch 'two 15 arrays ί 'patterned metal The layer and the conductive adhesive layer define a conductive material - the contact element comprises - the first metal portion is formed in the element array. The method further includes removing the support t, and each of the contact elements _ comprises: - the base is attached-up. The relative base is attached to the substrate from the Smithsonian; the 卩 and the Κ敎 Κ敎 、 、 、 亚 亚 亚 亚 亚 亚 亚 亚 ' ' ' ' ' ' ' ' ' ' ' ' ' ' ' ' ' ' ' ' ' The invention will be better understood in consideration of the following detailed description and drawings. [Embodiment] In accordance with the principles of the present invention, a connector for connecting to a device, including an array of contact elements, is provided. Piece included - the curved spring portion is formed as (Iv) provide two contact i, when the engagement means - the contact point for the operation ,, Ji wiper connector according to the present invention may be used to electrically connect.

4SHAW/04002TW/NEO -12- 1257695 至半導體級裝置（如石夕晶圓或_ S3可1=3250微米或更小節距触^ ΐ 4寸別地疋’本發明之接觸元件可電連接至且 ，距的接觸點。藉由提供受控制的擦刮動作， ί約ί二大連么盗中的接觸元件具有大的彈性工作範 操作狀況^需要的大翻_(cQmpressiQns)5作。 相接m本㈣技接赌供許多的 5二連接11包含接觸元件，係具有一曲 tilt觸平面（亦即將接觸的接觸點表面）。因 接合金屬墊或焊料球時，接觸元件可提‘性 控擦刮動作’容許有效的電連接 2=達明之連接器中的接觸元件，以最佳接 千面的輪㈣件（member)。#此轉簧構件接人一 戶，觸墊時^樣的醇導致—穿人動作，且通常對塾造成 =欲之傷害。選替地’在其他傳統連接針，接觸元件 =疋沒提供擦_作就是擦刮㈣不足 克服許多傳統連接H之缺點。 第二，本發明之連接器提供尺寸可縮放、低輪 profile)、低插入力（inserti〇n f〇rce)、高密度、上4SHAW/04002TW/NEO -12- 1257695 to semiconductor-grade devices (such as Shi Xi Wafer or _ S3 can be 1 = 3250 microns or less pitch touch ΐ 4 inch) 接触 The contact elements of the present invention can be electrically connected to and The contact point of the distance. By providing a controlled wiping action, the contact elements in the 大连 二 大连 大连 具有 具有 具有 具有 具有 具有 具有 具有 具有 具有 具有 具有 具有 需要 需要 需要 需要 需要 需要 需要 需要 需要 需要 需要 需要 需要 需要 需要 需要 需要 需要 需要 需要 需要 需要 需要 需要 需要 需要 需要This (4) technology gambles for a number of 5 two connections 11 containing contact elements, has a tilt touch plane (also to contact the contact point surface). Because of the joint metal pad or solder ball, the contact element can be improved The scraping action 'allows an effective electrical connection 2 = the contact element in the connector of the Daming, to best match the wheel of the thousand (four) members. #This rotating spring member is connected to a household, the alcohol when the pad is touched Causes - wears movements, and usually causes damage to the cockroaches. Selectively 'in other traditional connecting needles, contact elements = 提供 not provided rubbing _ is the shaving (four) deficiencies to overcome the shortcomings of many traditional connections H. Second The connector of the present invention provides a size scalable, low wheel profile), Low insertion force (inserti〇n f〇rce), high density, upper

及可分離/可錢連接的電雜，且制地_於高速矛 4SHAW/04002TW/NEO -13- 1257695 南性能應用。此遠技哭叮 n 之孟屬墊或基板栅格陣列封裝之美板 焊料球尺寸’轉觸球栅轉列封裝之 或更小圓上的焊料球，其中鱗球以250微米 立中mr之連接器可用以接合彻裝置之墊， 接的接觸元件直立對準。因此’只需要岸用 二=外部偏力（blasing force)連接連接器 向^置。此與許多傳統連接器系統相反，其需要應用一橫 σ a era力接合—連接器，且常對連接點導致傷害。 晶圓上之金 圓 級封裝 中 例而ί發11連接11可贱電連接至廣泛種_裝置。舉 屬=5，本發明之連接器可用以電連接至-石夕晶S 墊、一球柵格陣列封裝、一基板栅格陣列封裝、 壯一日日片級封裝和其他半導體或電氣裝置。本說明 件>_衣置」—詞意Μ要電連接或互連的電子裝置或組 封壯此，半導體裝置可包含但不限於半導體晶圓、 未封裝的積體電路，形成在半導體晶圓上或形成 兔路封裝的球栅格_、基板栅格陣列係形成在半 、豆日日圓上、在晶月模組上、或在積體電路封裝上。 圖 3Α和3Β為根據本發明之一實施例，顯示一連接 器And detachable / money-connectable electrical hybrid, and the grounding _ in the high-speed spear 4SHAW/04002TW/NEO -13- 1257695 South performance application. The solder ball size of the slab of the slab of the slab of the slab of the slab of the slab of the slab of the slab of the slab of the slab The device can be used to engage the pads of the device with the contact elements aligned upright. Therefore, it is only necessary to use the shore 2 = external blasing force to connect the connector to the set. This is in contrast to many conventional connector systems that require the application of a transverse force-joining connector and often cause damage to the connection point. In the gold-scale package on the wafer, the 11 connection 11 can be electrically connected to a wide variety of devices. For example, the connector of the present invention can be used to electrically connect to a -Silicon S-pad, a ball grid array package, a substrate grid array package, a day-to-day package, and other semiconductor or electrical devices. The present invention is embodied in an electronic device or group that is electrically connected or interconnected. The semiconductor device may include, but is not limited to, a semiconductor wafer, an unpackaged integrated circuit, formed in a semiconductor crystal. The ball grid _, the substrate grid array on the circle or forming the rabbit road package is formed on the half, the bean day yen, the crystal moon module, or on the integrated circuit package. 3A and 3B show a connector according to an embodiment of the present invention

4SHAW/04002TW/NEQ -14- 1257695 之W面圖。圓3A和3B例示本發明之—遠 —半導體裝置6〇，其包含金/知5g ’連接至 上做為接觸點。半導體I置 ’、形成在一基板62 一基板柵格陣列封裝，其中金屬塾6+4^^=可為 格陣列封裝上的「其彳 代表形成在基板柵W-side view of 4SHAW/04002TW/NEQ -14- 1257695. Circles 3A and 3B illustrate the far-semiconductor device 6 of the present invention, which comprises gold/knot 5g' connected to it as a contact point. The semiconductor I is disposed on a substrate 62 in a substrate grid array package, wherein the metal 塾6+4^^= can be formed on the grid array package.

和3B中連接ϋηϋ (iandS)」或金屬連接墊。圖3A 而不欲限制連接器50只庫 二為，不祝明， 裝連接。 、應用在與曰曰圓或基板柵格陣列封 -其5G包含接觸元件陣列54 ’形成在 因ί連接& 2可為—介電材料或—半導體材料。 連接至半導體級的半導體裝置，通 體製程常用的材料形成連接器5〇。於一實施例 二ϋ 英、石夕或陶究晶圓形成，而接觸元件54 形成於-;丨電層上，介電層可為藍寶石上石夕（sos)、玻璃 上石夕（SOG)、_四乙基正魏鹽（Bp聰）、或四乙基正 石夕酸鹽（TEOS)層，係形成在基板之頂表面上。接觸元件 P車列-般喊為二轉列’ 置成與將接_半導體裝置 上對應的接編配對。於—實施例巾，連接器、5()係形成 以接觸具50微米或更小節距的金屬墊。 接觸元件54係利用導電材料形成。每一接觸元件54 包含-基部55A依附於基板52之頂表面，以及一曲彈菁 部55B延伸自基部55A。曲彈簧部55β具一近端（卿Connect ϋηϋ (iandS)" or metal connection pad to 3B. Figure 3A does not intend to limit the connector 50 only to the second, do not wish to understand, install the connection. Applied in a circular or substrate grid array package - the 5G comprising contact element array 54' is formed in the connection & 2 can be a dielectric material or a semiconductor material. Connected to a semiconductor-scale semiconductor device, a material commonly used in the process is formed into a connector 5A. In a second embodiment, the yingying, shixi or ceramic wafer is formed, and the contact element 54 is formed on the 丨 丨 layer, the dielectric layer can be sapphire on the sap, SOS on the glass _Tetraethyl ortho-salt salt (Bp Cong) or a tetraethyl etchant (TEOS) layer is formed on the top surface of the substrate. The contact element P train is generally referred to as a two-column arrangement paired with a corresponding one on the semiconductor device. In the embodiment, the connector, 5() is formed to contact a metal pad having a pitch of 50 microns or less. Contact element 54 is formed using a conductive material. Each of the contact members 54 includes a base portion 55A attached to the top surface of the substrate 52, and a curved elastic portion 55B extending from the base portion 55A. The curved spring portion 55β has a proximal end (clear

4SH AW/04002TW/N EO -15- 1257695 板H =基部—，以及—末端（distal end)突出於基 接入本^注意圖3A和3β例示連接器5G為顛倒狀，以 接^+^體裳置60。本說明中方向性詞囊之使用，如 朝上f、Ϊί面」，意健述#連接11放置絲觸元件面 使用:方ίϊ器元件的位置關係。熟此技藝者會理解文中 同部分之為例示說明’且只欲描述接觸元件不 -接成為從 :接=點表*。本例示中 係$為且有3A所示，曲彈f部55β相對於基板52表面， =黃部咖具-曲率，當接合欲接^接^件54之曲 金屬塾叫用以提供-受控置之-個別 接器著=:r)至連 64。接觸元件54之曲骚=半^體叙置60之金屬墊 個別金屬墊，传r十一拉广I以一受控制的擦到動作接合 的墊170件製財效的輯接至個別 最佳的i::=二時， ί末二，表面所傲二=:魏 D接觸力可為5至⑽克的等級，其視應用ί定 4S H AW/04002TW/N ΕΟ -16- 1257695 刮距離可為5至400微米的等級。 =明接觸元件之另—特徵為：接觸元件之曲彈 可有非吊大的彈性工作範圍。具體而言，因為 = 方向移動，可達到接觸元件之電:徑; 3 作範圍。本說明中，接觸元件之「電路ί 曲彈簧部之末端至接觸元件之基“ 接網-处敖土本本發日月之連接器的接觸元件具有樺跨 接觸το件整個長度的彈缸作距離。、千，、私跨 電鎖顧，其柯提供所 ^ 中，接件54係利用鈦作為支撐 戶^欲彈“ A財撐結構概可被_ (plated)以獲得 下来成：於其他實_巾，接觸元件54係利用以 -鎳:金(C二[A或ί層金屬“油咐)’如不銹鋼塗覆銅 觸亓株技a 1 u)多層金屬片。於一較佳實施例中，接 ΓΓ下形成：—小粒（观u-_ed)銅-鈹 丄丄：二接讀上無電（eiectr〇iess〕鎳-金 , 耠供—不氧化表面。進一步，於另一實施例 ’接觸元件54於基部和轉簧部係使用不同金屬形成。 部和圖實施例中，接觸元件54顯示為由-矩形基 制。太早Η部形成。此配置只作為例示而不欲作為限 件尸^^之接觸兀件可以多種配置形成，且每一接觸元 而以附接曲彈簧部至基板的基部。基部可採用任4SH AW/04002TW/N EO -15- 1257695 Plate H = base - and - the distal end protrudes from the base access. Note that Figures 3A and 3β illustrate that the connector 5G is inverted to connect the body. Slay 60. In the description, the use of directional vocabulary, such as facing up f, Ϊ 面 」, 意 述 # 连接 连接 连接 连接 连接 放置 放置 放置 放置 放置 放置 放置 放置 放置 放置 放置 放置 放置 放置 放置 放置 放置 放置 放置 放置 放置Those skilled in the art will understand that the same parts of the text are exemplified' and that only the contact elements are not described as being connected to: In the example, the middle is $ and there is 3A, the curved portion f is 55β relative to the surface of the substrate 52, and the yellow portion is the curvature of the yellow metal, and the curved metal squeak is used to provide the Control - the individual connector == r) to connect to 64. The contact element 54 of the Qu Sao = half-body description of the metal pad of the metal pad 60, the transfer of the eleventh wide I with a controlled wipe to the action of the pad 170 pieces of financial efficiency to the individual best i::=2, ί2, the surface is proud 2:: Wei D contact force can be 5 to (10) gram level, depending on the application ί定4S H AW/04002TW/N ΕΟ -16- 1257695 scraping distance It can be on the order of 5 to 400 microns. = Another feature of the bright contact element is that the curved part of the contact element can have a flexible working range that is not large. Specifically, because the = direction moves, the electrical: diameter of the contact element can be reached; In the present description, the contact element of the contact element "the end of the spring portion of the circuit to the base of the contact element" is connected to the connector of the connector. The contact element of the connector has a birch cross-contact of the entire length of the cylinder. . , thousand, and private cross-lock, Gu Ke provides the ^, the connector 54 uses titanium as the supporter ^ wants to play "A financial support structure can be _ (plated) to get down: in other real _ For the towel, the contact member 54 is made of a nickel-clad: gold (C 2 [A or ί layer metal "oil") such as stainless steel coated copper contact technology a 1 u) multilayer metal sheet. In a preferred embodiment, the underlying crucible is formed: - small particles (view u-_ed) copper-germanium: two read-free electroless (eiectr〇iess) nickel-gold, antimony-non-oxidized surface. Further, In another embodiment, the contact element 54 is formed of a different metal at the base and the spring portion. In the embodiment and the illustrated embodiment, the contact member 54 is shown as being made of a rectangular base. The front portion is formed too early. This configuration is for illustrative purposes only. The contact element which is not intended as a limiting piece can be formed in various configurations, and each contact element is attached to the base of the substrate by the curved spring portion.

4SHAW/04002TW/NEO -17- 1257695 何形狀，而可形成為圓形或其他有用的 ^至基板。此外，-接觸元件可包含多個 自基部，將如以下詳加討論。 〃 f發明之連接器的大彈性卫作範圍， :、欲，半導體裝置中的正常共面性差異和值置= 此i管欲連接的半導體裝置中可能存在 Γ二，可提供可靠的電連接。圖⑽么二 接合不㈣轉體裝置。圖财， ^接觸的金屬墊之位置差異，需要連接器5G之—端的接 觸兀件比另-端的接觸元件壓縮更多 ΐ兩端的接觸元件_更多。因為本發明 不有大的彈性工作範圍’不同的接觸元件可為 度的有接觸元件提供有效的電連接。 卿=和=例示根據本發明另—實施例之一連接器。 74之陣列形成在基板 在-/本^施例中’每一接觸元件74包含一基部75Α， ΪΪΪ部观與7兄延伸自基部75Α。曲彈簧部75β f末端突出於基板72之上，並朝向彼此。曲彈 =…/75C的其他特性和曲彈簧部55B相同。亦即， =^部75B與75C形成為從一接觸平面彎開，且各具有 率，當接合一欲接觸的半導體裝 供受控制的_動作。再者，轉簧部75=5(：财Ϊ4SHAW/04002TW/NEO -17- 1257695 What shape, can be formed into a circular or other useful ^ to the substrate. In addition, the -contact element can comprise a plurality of self-bases as will be discussed in more detail below. 〃 f The large elastic range of connectors invented, :,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,,, . Figure (10) Two joints (4) swivel device. Fig., ^The difference in the position of the contact metal pad requires that the contact element of the connector 5G is more compressed than the contact element of the other end. Because the present invention does not have a large elastic working range, 'different contact elements provide an effective electrical connection for the degree of contact elements. Qing = and = exemplify a connector according to another embodiment of the present invention. The array of 74 is formed on the substrate. In each of the embodiments, each of the contact elements 74 includes a base portion 75, which extends from the base portion 75. The curved spring portions 75β f end protrude above the substrate 72 and face each other. The other characteristics of the curved bullet = ... / 75C are the same as those of the curved spring portion 55B. That is, the =^ portions 75B and 75C are formed to be bent from a contact plane, and each has a rate when a semiconductor to be contacted is engaged to be controlled. Furthermore, the spring part 75=5 (: money

4SHAW/04002TW/NEO -18- 1257695 ===峨細元物卿度，藉此容許 於本例示中，連接器70用以 :如-球栅格陣列封裝，包含晴上 7〇可用完接合半導體裝置80。連接器 而，使用例如基板栅格_封裝上的塾。然 使用連接70接觸焊料球84提供特別的優點。 件74不會傷宝焊料因此’於接觸_，接觸元 第二，因為接觸 觸平面-開，本曲彈簧部形成為從接 受控制的擦觸^。3 Ζ料料，翻元件74提供 接觸表面，亦二:=:可做一^ 微米===放，-~5。 性工:圍長度等級的大彈 件了適應大耗_縮。因此，本發明4SHAW/04002TW/NEO -18- 1257695 === 峨 元 物 , , , , , , , , , 容许 容许 容许 容许 容许 容许 连接 连接 连接 连接 连接 连接 连接 连接 连接 连接 连接 连接 连接 连接 连接 连接 连接 连接 连接 连接 连接 连接 连接 连接 连接 连接 连接Device 80. Connector, for example, using a substrate grid 塾 on the package. The use of the connection 70 to contact the solder balls 84 provides a particular advantage. The piece 74 does not damage the solder so that it is in contact _, the contact element is second, because the contact touch plane is open, the curved spring portion is formed to receive the controlled wipe ^. 3 Ζ material, turn element 74 to provide contact surface, also two: =: can do a ^ micron === put, -~5. Sex workers: large elastics of the length class have adapted to the large consumption. Therefore, the present invention

4SHAW/04002TW/NEO -19- 1257695 面性差異或位置失 之連接器可有效地用以接觸具正常共 準的傳統裝置。 ^ 圖3A和5A中的連接器5G和7()顯示為包含一 二部Ϊ ΐ。圖^和_示實施例僅為例示: 不右人作為限制。本發明之連接器可以多種 接觸的接觸點類型而定，且視所欲 奴 册例示根據本發明另-實施例之連接器。^圖圖=^ 包ί 一細元件93形成在基板92上。接觸元 件^包含一基部94Α和一第一曲彈菁部_，以及 曲彈簧部94C。第-曲彈簧部94Β和第二曲彈菁部9此具 有彼此指離的末端。接転件93可肋接合 了 =二金f ί或:—!:·當用以接合—焊料球，接觸元 在弟與第一曲彈簧部間支托住焊料球。因此，第 -和第二曲彈簧部94Β和94C以從焊料球之接觸平面彎開 的方向，用一受控制的擦刮動作接觸焊料球之側表面。 圖6Β例示一接觸元件95形成在基板％上。接觸元 件95包含一基部97Α，和一第一曲彈簧部97Β以及一第二 曲，簧部97C延伸自基部。本實施例中，第一曲彈簧部97β 和第二曲彈簧部97C以螺旋（spiral)配置突出於基板96 之上。接觸元件95可用以接觸一金屬墊或一焊料球。於 =種情形中，第一和第二曲彈簧部97B和97C從接觸平面 彎開，並提供一受控制的擦刮動作。4SHAW/04002TW/NEO -19- 1257695 Connectors with a difference in face or position can be effectively used to access conventional devices with normal alignment. ^ The connectors 5G and 7() in Figs. 3A and 5A are shown to include a two-part Ϊ. The figures and the embodiment are merely illustrative: the right person is not limited. The connector of the present invention can be exemplified by a variety of contact contact types, and the connector according to another embodiment of the present invention is exemplified as desired. ^图图^^ A thin element 93 is formed on the substrate 92. The contact member ^ includes a base portion 94A and a first curved elastic portion _, and a curved spring portion 94C. The first curved spring portion 94A and the second curved elastic portion 9 have ends which are pointed away from each other. The joint member 93 can be rib-joined with = two gold f ί or: -!: · when used to bond - the solder ball, the contact element supports the solder ball between the younger brother and the first curved spring portion. Therefore, the first and second curved spring portions 94A and 94C contact the side surface of the solder ball with a controlled wiping action in a direction which is bent from the contact plane of the solder ball. FIG. 6A illustrates that a contact element 95 is formed on the substrate %. The contact member 95 includes a base portion 97, and a first curved spring portion 97A and a second curved portion, and the spring portion 97C extends from the base portion. In the present embodiment, the first curved spring portion 97β and the second curved spring portion 97C protrude above the substrate 96 in a spiral configuration. Contact element 95 can be used to contact a metal pad or a solder ball. In the case of =, the first and second curved spring portions 97B and 97C are bent away from the contact plane and provide a controlled wiping action.

4SHAW/04002TW/NEO -20- 1257695 、“t發明之ί接器可使用不同製程順序，以多種製程製 ，。牛列而言’每一接觸元件之曲彈簧部可由模 °於—實施例中，本發明之連接器; 士恭Β _衣私彳ί術形成。當利用半導體製程技術形成時， 之連接器可稱之作為微機電系統（MEMS)。因此， 於f發明一實施例中，本發明之連接器亦稱做-微機電季 統柵格陣列連接器。 糸 之連才例7^艮據本發明之一實施例，形成圖3A ίΪ H 步驟。參顧7A，提供―基板⑽， =件將形成於其上。基板1〇2可例如為一矽晶圓或陶 竟曰曰因’且可包含—介電層形成於其上（未示於圖 如上所述，SOS、SOG、BPTEOS、或TEOS層之-介電層， 可^於基板102上’以隔離基板⑽及接觸元件。接曰著， 二f層.104形成於基板搬上。支撐層m可為一沉積 二=’例如氧化物或氮化物層、旋轉塗佈（spin_〇n) ^电貝、聚合物、或任何其他可適合侧的材料。於 =例中’支縣104係由化學氣她積製程沉積。另一實 ，例中，.支撐層104係由電漿氣她積（卩丨嶋厂 depos此0n，)製程沉積。又另一實施例中，支擇層 轉塗佈製程沉積。再另_實施射，#基板⑽ 層ΐ導電黏著層時，支撐層可利用半導體製程 吊使用的氧化製程成長。 支撐層104沉積後’尊層1〇6形成於支撐層1〇4之4SHAW/04002TW/NEO -20- 1257695, "The invention of the adapter can be used in different process sequences, in a variety of processes. For the cattle column, the curved spring portion of each contact element can be molded in - in the embodiment The connector of the present invention; the formation of a smuggling device. When formed by a semiconductor process technology, the connector can be referred to as a microelectromechanical system (MEMS). Therefore, in an embodiment of the invention, The connector of the present invention is also referred to as a micro-electromechanical grid array connector. 连 才 例 例 艮 艮 艮 艮 艮 艮 艮 艮 艮 艮 艮 艮 艮 艮 艮 艮 艮 艮 艮 艮 艮 艮 艮 艮 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 。 , the member will be formed thereon. The substrate 1 2 may be, for example, a germanium wafer or a ceramic layer and may include a dielectric layer formed thereon (not shown in the figure above, SOS, SOG a BPTEOS, or a dielectric layer of the TEOS layer, can be used to isolate the substrate (10) and the contact elements on the substrate 102. Next, the second f layer 104 is formed on the substrate. The support layer m can be a deposition layer = 'eg oxide or nitride layer, spin coating (spin_〇n) ^ electric shell, polymer, or any other Can be suitable for the side of the material. In the example = 'Zhouxian 104 series is deposited by chemical gas her process. Another real, for example, the support layer 104 is made of plasma gas her product (卩丨嶋厂depos this 0n, Process deposition. In still another embodiment, the selective layer is transferred to the coating process for deposition. Further, when the substrate (10) is layered with a conductive adhesive layer, the support layer can be grown by an oxidation process using a semiconductor process crane. After the layer 104 is deposited, the 'layer 1 〇 6 is formed on the support layer 1 〇 4

4SHAW/04002TW/NEO •21- 1257695 頂表面上。遮罩層1〇6結合傳統微影製程，以利用 106定義圖案（pattern)於支撑層1〇4上。在遮罩 (printed)與顯影（devei〇ped)後（圖 7B)二 106A至㈣之遮罩圖案，形成在支樓層⑽=或 定義支稽層104受保護而免於_侧之區域。、， 麥照圖7C，利用區域ι〇6Α至i〇6c作為遮罩，執 非等向侧製程。非等向侧製程的結果，4SHAW/04002TW/NEO • 21- 1257695 on the top surface. The mask layer 1 结合 6 is combined with a conventional lithography process to define a pattern on the support layer 1 利用 4 using 106. After masking and developing (Fig. 7B), the mask patterns of 106A to (4) are formed on the support floor (10) = or define the area where the support layer 104 is protected from the _ side. , Photograph 7C, using the area ι〇6Α to i〇6c as a mask, and performing the non-isotropic process. The result of the non-isotropic process,

罩層未覆蓋的支撐層1G4。因此，形成支魏域HI 104C。接著移除包含區域⑽A至聰 露支撐區域（圖7D)。 口系以恭 參照圖7E ’支撐區域1 〇4A至！〇4c接著 刻製程。等向侧製程以實質上相同的爛速率 刻之材料。因此，等向_之結果， 姻支撐區域腿至1Q4C的頂角，如圖7Ε所示。於一 ==中’等向侧製程為電漿_製程，使用SF6、C肌、 CF4其他侧介電材料f _f知化學物。另— 中，等向侧製程為濕钱刻製程，例^J 刻（B0E)之濕侧餘。 友解1化物餘 面洋金屬層⑽形成於基板102之表 面和支#區域腿至1G4C之表面上。金^ iq 層或銅合金層或多層金屬沉積，如m全 (Cu/隱細。-較佳實施例中，接觸元件係利用以下The cover layer 1G4 not covered by the cover layer. Therefore, the support domain HI 104C is formed. The containing area (10) A is then removed to the smart support area (Fig. 7D). The mouth is based on Figure 7E ‘Support area 1 〇 4A to! 〇 4c then engraved the process. An isotropic process is a material that is engraved at substantially the same rate of decay. Therefore, as a result of the isotropic _, the support supports the leg to the top corner of 1Q4C, as shown in Fig. 7Ε. In the middle 'isometric process is the plasma process, using SF6, C muscle, CF4 other side dielectric material f _f know the chemical. In the other, the isotropic process is a wet money engraving process, and the wet side of the case (B0E). The surface layer of the guest metal layer (10) is formed on the surface of the substrate 102 and the leg of the branch region to the surface of the 1G4C. Gold ^ iq layer or copper alloy layer or multilayer metal deposition, such as m full (Cu / concealed. - In the preferred embodiment, the contact elements are utilized

4SHAW/04002TW/NEO -22- 1257695 =人一小粒銅—鈹(CuBe)合金，接著鍍以無電鎳-金 (^ U)，以提供一不氧化表面。金屬層108可以利用化 程:電鑛、濺鑛、姆相沉積來沉積，或 ”白孟蜀膜/儿積技術。利用傳統微影製程，沉積一 罩層且圖案化為遮罩區域腕至11G 、至、 定義金屬層雨受保護而免於後續^之^雇至 罩區ΐΤίΟΑ圖二的結構經歷一侧製程，以移除未被遮 5 Γ〇〇Γ C覆盍的金屬層。結果，形成金屬部1〇8α 包含-美金屬部醜至職之每一個， 已3基口Ρ形成在基板102上及一 下支擇區域的形狀，突出於基板表面之 上，亚八一曲率，當接觸—接觸點時，提供一擦到動作。 祛田連接②’移除支撐區域104Α至104C (圖7Η)， 移除支撐_。結果，^=^化物侧劑（e她㈦ 觸元件㈣至me在基m(free standing)接 器，ίΐΐίΐ知悉本發明時，理解要製作本發明之連接 女丨制μ〜驟可能有許多變化。舉例而言，等向性餘4SHAW/04002TW/NEO -22- 1257695 = A small piece of copper-bismuth (CuBe) alloy, followed by electroless nickel-gold (^ U) to provide a non-oxidized surface. The metal layer 108 can be deposited using a chemical process: electromineral, splashing, or m-phase deposition, or "Bai Meng film/child technique. Using a conventional lithography process, a cap layer is deposited and patterned into a mask region wrist to 11G, To define, the metal layer rain is protected from the subsequent application to the hood area. The structure of Figure 2 undergoes a side process to remove the metal layer that is not covered by 5 Γ〇〇Γ C. As a result, the formation The metal part 1〇8α contains each of the ugly parts of the metal part, and has formed a shape of 3 bases on the substrate 102 and the shape of the next selected area, protruding above the surface of the substrate, the curvature of the sub-eight-one, when contact- At the point of contact, a rubbing action is provided. The 连接田 connection 2' removes the support area 104Α to 104C (Fig. 7Η), removes the support _. As a result, ^=^ chemical side agent (e she (seven) touch element (four) to me When the present invention is known, it is understood that there are many variations in the method of making the connection of the present invention. For example, isotropic

使件形成的接觸元件有所欲曲率。進-步而 4SHAW/04002TW/NEO -23- 言 ，,、鱼=技藝者會理解，透過使用半導體製程技術，可制 =，接為之接觸凡件具多種性f。舉例而言 = 有第一節距，而第二群組的接觸元: V成為具有大於或小於第—節距之第二節距 之電或機械性質可能有其他變化，如以下將詳加描述。The contact elements formed by the members have a desired curvature. Step by step and 4SHAW/04002TW/NEO -23- 言,,, fish = the artist will understand that through the use of semiconductor process technology, can be made =, in contact with the object has a variety of properties f. For example, there is a first pitch, and the contact elements of the second group: V may have other changes in electrical or mechanical properties having a second pitch greater than or less than the first pitch, as will be described in more detail below. .

之連^ 根據本發明之一實施例’形成圖5AConnected to form Figure 5A in accordance with an embodiment of the present invention

之連接為70的製程步驟。目8A 圖7A至7H所示製程步驟實質上柏因。^之衣私步驟和 例示藉由適當設計的遮罩圖荦^: ’圖从至811 件。 ^早^可製造不服置的接觸元 支撐層124形成於基板122上。一遮罩 ‘罩‘太·，層上’供絲形成圖5a之連接器所欲 a例中’遮罩區域咖和i26B (圖8b) 件。罪在s’以谷許形成包含_曲彈簧部的接觸元 利用遮罩區域126A和126B作為遮罩，執行 飿刻製程後’形成支標區域124ΜΜ24β (圖⑹。移除 f區域以暴露支擇區域（圖8D)。接著， 體 綱製程以使結構成形，使得支撐區域 之頂表面包含圓角（圖8E)。 至屬層128 /儿積於基板122之表面和支撐區域124八 4S H AW/04002TW/N ΕΟ -24- 1257695 和124B之頂表面上方（圖π)。包含區域和i3〇B之 遮罩圖案，定義在金屬層128上。利用遮罩區域13〇A和 130B作為遮罩’侧金屬層128後，形成金屬部⑽八和 128B (圖8G)。每一金屬部;[28A和128B包含一基部形成 於基板122上’以及-鱗糾職於個财撐㈣（腕 或124B)上。每一金屬部之曲彈簧部採取 形狀:突批基板表蚊上，並财—鲜，#接觸^ =日11提供一擦到動作。本實施例中’金屬部i28A和 端形成為彼此面對。為完成此連接器，移除支樓 1°^其4，124B (圖8H)。結果’形成獨立的接觸元件 二個人ΐϊ i〇2上。在圖8H之剖面圖中，接觸元件132的 ί藉接。._ i實際實作中’金屬部之基 之連^==_伽之[實_，形成圖5A 路^ 圖9a，提供包含預定義電 層或其:電ΐϊ，二;i=145可包含互連的金屬 142中。本:二1疋電谷或電感，這些-般形成在基板 頂表面上i =的=金ΓΓ形成在基板142之 件，-古产思1二成接件連接。為形成所欲接觸元 :上。支撐層144和-伽46形成在編2 = 圖 製程步驟則貞虹醇關δΑ至δΗ的方式進行。The process is connected to 70 steps. Item 8A The process steps shown in Figures 7A through 7H are essentially Bain. ^ The private steps and illustrations are from 811 pieces by appropriately designed masks. The contact element 124 can be formed on the substrate 122. A mask ‘cover ‘太·, 层上' supply wire forms the connector of Figure 5a. In the example of the 'mask area coffee and i26B (Fig. 8b). The sin is formed in the s' with the contact element including the spring portion using the mask regions 126A and 126B as the mask, and after the engraving process is performed, the sub-region 124ΜΜ24β is formed (Fig. 6). The f region is removed to expose the selection. The area (Fig. 8D). Next, the body process is such that the structure is shaped such that the top surface of the support area contains rounded corners (Fig. 8E). The top layer 128/the surface of the substrate 122 and the support area 124 八 4S H AW /04002TW/N ΕΟ -24- 1257695 and above the top surface of 124B (Fig. π). The mask pattern containing the area and i3〇B is defined on the metal layer 128. The mask areas 13〇A and 130B are used as masks. After the side metal layer 128, the metal portions (10) eight and 128B (Fig. 8G) are formed. Each metal portion; [28A and 128B comprise a base formed on the substrate 122] and - the scale is replaced by a financial support (four) (wrist or 124B). The curved spring part of each metal part adopts the shape: the protruding substrate is on the mosquito, and the wealth is fresh, #contact^=11 provides a rubbing action. In the present embodiment, the metal part i28A and the end are formed. To face each other. To complete this connector, remove the branch 1°^4,124B (Fig. 8H). As a separate contact element, two people ΐϊ i〇2. In the cross-sectional view of Fig. 8H, the contact element 132 is borrowed. _ i actually implements the connection of the metal part ^==_ gamma [ Form _, forming Figure 5A, Figure 9a, providing a pre-defined electrical layer or its: ΐϊ, two; i = 145 can include interconnected metal 142. Ben: two 疋 electric valley or inductor, these Formed on the top surface of the substrate i = = metal ΓΓ formed on the substrate 142, - Gusisi 1 two-piece connector connection. To form the desired contact element: upper. Support layer 144 and - gamma 46 formed in the 2 = The process steps of the diagram are carried out in a manner that 贞 醇 关 δ Α to δ 。.

4SHAW/04002TW/NEO -25- 1257695 案化遮罩層146(圖呢），μ 144Α，μ44Β ( Ώ 144 ^ 撐區域(圖9D)。接著，:，二移除遮罩區域以暴露支 域遍和的頂^ 物虫刻製程，削圓支樓區 板如之表面上冗積—金屬層1鮮基 形成於頂全屬邱ufff (圖9F)。金屬層148 路^屬σΠ4?上方。結果’金屬層148電連接至電 ，-=:ΐ罩層150圖案化金屬層148 _，並經 接觸元件152之製作（圖;^隨和1桃，以完成 式，連編145。以此方 跋u上連接提供额外的功能性。舉例而古，電 亦爾元t,接在一起。電路145 142中或上的—電容或_=至4置’例如形成在基板 -步ί:接=脱作為積體電路製程的-部分提供進 和底下的-路^二，一連續電路捏形成於接觸元件脱 連續或阻^ F m i _讀和侧電關沒有金屬不 ^ —Ch)〇 姓槿暮使用接5線形成接觸元件。'然而，這樣的 ^致接觸元件和底下的金屬連接間之介：ΪΪ4SHAW/04002TW/NEO -25- 1257695 Case mask layer 146 (Fig.), μ 144 Α, μ44 Β ( Ώ 144 ^ struts area (Fig. 9D). Then, :, two remove the mask area to expose the branch area And the top ^ insect engraving process, the surface of the rounded branch area is redundant on the surface - the metal layer 1 fresh base is formed on the top of the Qiu ufff (Fig. 9F). The metal layer 148 road ^ is above the σ Π 4? 'The metal layer 148 is electrically connected to electricity, -=: the enamel layer 150 is patterned with the metal layer 148 _, and is produced by the contact element 152 (Fig.; ^1 and 1 peach, to complete, 145. The connection on the 跋u provides additional functionality. For example, the ancient ones are connected together. The capacitance or _= to 4 in the circuit 145 142 is formed on the substrate - step ί: As part of the integrated circuit process, the part is provided with the bottom and the bottom of the circuit. The continuous circuit is formed by the contact element decoupling or blocking. F mi _ reading and side electric switching without metal is not ^Ch)暮 Use 5 wires to form the contact element. 'However, between the contact element and the underlying metal connection: ΪΪ

4SHAW/04002TW/NEO ** 26 - 1257695 (gross)材料和剖面不連續、以及阻抗不匹配，而導致 不期望的電雖以及不良的高雜作。本购之接觸元件 =受傳統連接HL關，並且使財發日狀接觸元件 立的連接H可用於高要求的高頻和高性能應用中。 士上戶斤述g本發明之連接器的接觸元件使用 而包含具 j形成’可形成具有録機械和電性質的細元件。特 別地’使用轉體餘步驟料建立—連群 、 不同機械及/或電性質的接觸元件。 因此本發曰月之另—方面，本發曰月之 ^ 件具有不同操作特性。亦即，連接器包含妾 i=eiOgenr綱元件，其中可__元件的操 作特性’以滿足想要應用的要求。本說明中，-杜 特性意指接觸树的電、機械和可靠度性質。ί著 及/或機械性質的接觸元件，本^ 3 t 祕能互連應㈣電、機械和可纽的嚴厲ΐ 根據本發明之一實施例，一 元件特別地設計以下機械性質，：達苹組接觸 圍，在接觸元件間是可以變觸;^之彈性工作範 罘—，母一接觸元件之4SHAW/04002TW/NEO ** 26 - 1257695 (gross) Material and profile discontinuities, as well as impedance mismatch, resulting in undesirable electrical and undesirable high-level miscellaneous. The purchased contact elements are connected by the traditional connection HL and enable the connection of the financial contact element to be used in demanding high frequency and high performance applications. The use of the contact elements of the connector of the present invention to include the formation of a thin component that can be recorded with mechanical and electrical properties. In particular, the use of rotating body steps to create contact elements of different groups, different mechanical and/or electrical properties. Therefore, in the other aspect of this issue, the month of this issue has different operational characteristics. That is, the connector includes 妾 i = eiOgenr elements, wherein the operational characteristics of the __ elements can be met to meet the requirements of the intended application. In this description, the -du characteristic means the electrical, mechanical and reliability properties of the contact tree.接触 / / 机械 机械 机械 机械 机械 机械 机械 机械 机械 机械 机械 机械 机械 机械 机械 机械 机械 机械 机械 机械 机械 机械 机械 机械 ΐ ΐ ΐ ΐ ΐ ΐ ΐ ΐ ΐ ΐ ΐ ΐ ΐ ΐ ΐ ΐ ΐ ΐ ΐ ΐ ΐ ΐ ΐ ΐ ΐ ΐ The contact area of the group can be changed between the contact elements; the elastic working mode of the ^-, the mother-contact element

4SHAW/04002TW/NEO -27, 1257695 直立高度可以變化 以變化。 第四，接觸元件之節距或水平尺寸可 根據本發明另些實施例，可為_接觸元件或— :件，淑計電性質’以達某些所欲操作特性。舉例而 =-接觸元件之直流阻值(DC resistance)、阻抗、 电感（inductance)和載流能力在接觸元件間可變化。因 組的接觸元件可設計成有較低阻值，或一群組的 接觸7L件可設計成有低電感。 f ’ _祕贤計為—接觸元件獲得所 二罪度性貝’或為一組接觸元件達某些所欲操作特性。 3而=接觸元件可設計成在職應力（例如熱循環、 shock and vibration] ^ , —又顧)後’顯示無或最小的性能下降。接觸元件亦 可設計成達顺界鮮定義的其他可#度要求，例如電子 產業聯盟（EIA)所定義的。 田本表明之連接益中的接觸元件製造為微機電系統 柵格陣列’接齡件之機械和電特性可藉改變以下設計來 數而修改。第一，可選擇接觸元件之曲彈簧部的厚度，以 產生所欲接觸力。舉綱言，—般大約30微米的厚度產 生克或更少等級的低接觸力，而對相同位移 (displacement)，40微米的凸緣（flange)厚度產生2〇 克的較高接觸力。也可選擇曲彈簧部的寬度、長度和形4SHAW/04002TW/NEO -27, 1257695 The upright height can vary to change. Fourth, the pitch or horizontal dimension of the contact elements can be _contact elements or components in accordance with further embodiments of the invention to achieve certain desired operational characteristics. For example, the DC resistance, impedance, inductance, and current carrying capacity of the contact element can vary between contact elements. The contact elements of the group can be designed to have a lower resistance, or a group of contacts 7L can be designed to have a low inductance. f </ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ 3 and = contact elements can be designed to exhibit no or minimal performance degradation after in-service stresses (eg, thermal cycling, shock and vibration) ^, - again. Contact elements can also be designed to meet other requirements defined by the Shunjie, such as the Electronic Industry Alliance (EIA). The contact elements in the connection shown in Tianben are manufactured as MEMS grid arrays. The mechanical and electrical characteristics of the ageing pieces can be modified by changing the following design. First, the thickness of the curved spring portion of the contact element can be selected to produce the desired contact force. To put it in mind, a thickness of about 30 microns produces a low contact force of gram or less, while for a displacement, a 40 micron flange thickness produces a high contact force of 2 gram. Also select the width, length and shape of the curved spring

4SHAW/04002TW/NEO -28- 1257695 狀，以產生所欲接觸力。 第二’可選擇接觸元件中要包含的曲彈簧部數 士所ΓίΓ力、所欲載流能力和所欲接觸阻值。舉例而 二:ΪΓ部的數目大約加倍接觸力和載流能力，而 大約減少一半接觸阻值。， 第—可i^擇特殊的金屬成分和處理，以獲得所欲彈 、^導電性特性。舉例而言，銅合金，例如銅—鍵，可用 機械彈性和電傳導⑽的良好取捨。選替地，可使 —Α屬多層提供優越的機械與紐質兩者。—實施例中， 件使用鈦鑛_、接著賴、最後鍍金，而形成 枓二/錄/金多層。欽會提供優越的彈性與高的機械耐久 担i jrabllity)，而銅提供優越的導電性，錄層和金層 越的抗腐錄（CQ聰i〇n resistance)。最後， =同的1屬/儿和技術，例如電鑛或濺鑛’以及 術，如合金、退火以及其他冶金技術，可 觸兀件特別設計所欲特性。 #所第四H丨曲料部之解，以產生某種電和機械 =°亦可變化曲彈簧部之高度、或從基部突出的量，以 產生所欲電和機械性質。 固10A和10B為根據本發明之另一實施例之一連接器 的剖面圖。參照圖1GA，一連接器220包含-第-組接觸4SHAW/04002TW/NEO -28- 1257695 shape to produce the desired contact force. The second 'optional contact element' contains a plurality of portions of the curved spring portion, the desired current carrying capacity, and the desired contact resistance. For example, the number of the ankles is approximately doubled by the contact force and current carrying capacity, and approximately by half the contact resistance. , the first - can choose a special metal composition and processing to obtain the desired elastic properties. For example, copper alloys, such as copper-bonds, can be traded off with mechanical elasticity and electrical conduction (10). Alternatively, the Α 多层 multilayer provides superior mechanical and new quality. - In the examples, the article uses titanium ore, followed by gold plating, and finally forms a bismuth/record/gold multilayer. Chin will provide superior flexibility and high mechanical durability (I jrabllity), while copper provides superior electrical conductivity, and the recording layer and gold layer are more resistant to corrosion (CQ Cong i〇n resistance). Finally, = the same genus/child and technology, such as electro-mine or splashing, and techniques such as alloying, annealing, and other metallurgical techniques, can be specifically designed to meet the desired characteristics. The solution of the fourth H丨mechanical part to produce some electrical and mechanical =° can also vary the height of the spring portion or the amount protruding from the base to produce the desired electrical and mechanical properties. Solids 10A and 10B are cross-sectional views of a connector in accordance with another embodiment of the present invention. Referring to FIG. 1GA, a connector 220 includes a --group contact

4SHAW/04002TW/NEO -29- 1257695 兀件224、226和228，以及一第二組接觸元件225和227， 皆幵&gt;成在基板222上。第一組接觸元件224、226和228 具有一曲彈簧部長於第二組接觸元件225和227之曲彈筈 部。換言之，接觸元件224、226和228之曲彈簧部的高 度大於接觸元件225和227之曲彈簧部的高度。 藉由提供具不同高度之接觸元件，本發明之連接器 220可有利地應用於「熱調換㈤卜swapping)」應用中。 熱雛意指當裝置欲連接之系統為電活動（electricaUy active)日守，裝设或拆卸一半導體裝置，而不傷害此半導 體裝置或魏。於熱雛操作巾，不同電源和接地接腳及 信號接腳必須依序且不_的連接和_，㈣免傷害裝 置或系統。藉由使用包含不_度賴觸元件的連接^ 較高的接·件在較短接觸元件前，可贱製造電連接。 以此方式’可製造所欲電連接順序，以達熱調換操作。 如圖10A所示，連接器220欲連接至一半導體梦置 =半導體装置230包含形成其上的金屬塾^當= 卩^力^妾合連接器22G與半導體裝置23G，高接觸 ί /、-咖和228可首先接觸個別的金屬墊232，而較 /州f凡件225和227保持未連接。接觸元件224、226 ί L可用^電連接至半導體装置230之電源與接地接 之U ^ 卜_力F (® _ ’連接至信號接腳 的^9觸兀件225和227，則可連接裝置23G上侧 、M 32。因為本發明之接觸元件具有大彈性工作範4SHAW/04002TW/NEO -29- 1257695 components 224, 226, and 228, and a second set of contact elements 225 and 227, are formed on substrate 222. The first set of contact elements 224, 226 and 228 have a curved spring portion of the second set of contact elements 225 and 227. In other words, the height of the curved spring portions of the contact members 224, 226, and 228 is greater than the height of the curved spring portions of the contact members 225 and 227. The connector 220 of the present invention can be advantageously applied to a "hot swapping" application by providing contact elements having different heights. Heat means that when the device to be connected is an electric activity (electricaUy active), a semiconductor device is installed or disassembled without harming the semiconductor device or Wei. For hot chick operating wipes, different power and ground pins and signal pins must be connected and _, and (4) damage-free devices or systems. The electrical connection can be made by using a connector having a higher connection than the contact element of the contact element before the shorter contact element. In this way, the desired electrical connection sequence can be fabricated to achieve a thermal exchange operation. As shown in FIG. 10A, the connector 220 is to be connected to a semiconductor device=the semiconductor device 230 includes a metal 形成 当 = 力 力 与 22 22 22 22 22 22 22 22 22 22 22 22 22 22 22 22 22 22 22 22 22 22 22 22 22 22 22 22 22 22 22 22 22 22 22 22 22 22 22 22 22 22 The coffee and 228 may first contact the individual metal pads 232 while the other/states 225 and 227 remain unconnected. The contact elements 224, 226 can be electrically connected to the power supply of the semiconductor device 230 and the ground connection U ^ Bu_force F (® _ 'connected to the signal pin's ^9 contacts 225 and 227, then the device can be connected 23G upper side, M 32. Because the contact element of the invention has a large elastic working range

4SHAW/04002TW/NEO -30- 1257695 圍 而 ’第-組接觸树可比第二組接觸元件進一步 不影響接麻狀完整性（lntegrity)。以此方式^ 器220使半導體裝置23〇能熱調換操作。 妾 根據本㈣之另-方面，—賴器具有接地平面，且 ，觸元件之阻抗可藉以下方式控制：變化—信號接腳之接 觸元件與接地平面_輯，或—錢接腳之接觸元件與 二接地接腳之接觸元件間的距離。目n為根據本發明一 貫施連接H的剖賴，此連接器包含—接地平面， 改二么號兀整性以及控制接觸元件阻抗。參照圖I〗，一連 接器250包含一接觸元件254B，其欲連接至一半導體裝置 上的-信號接腳。連接器25G更包含接觸元件25^其欲 連接至半導體裝置之接地電位。連接器250包含-接地平 面255，其形成於基板252令。接地平面2阳可形成於基 板252之頂表面上，或嵌入於基板252中。圖π中，顯 =接觸元件254A與254C和接地平面255間的連接。實際 貫作中’接觸元件254A與254C可透過基板252表面上的 金屬連接，或透過嵌於基板252中的金屬連接，與接地平 面255連接。 口口連接為250中包含接地平面255，具有改善透過連接 :fO連接之交流電信號的信號完整性的效果。特別地， I1 現著積體電路操作於愈來愈高的頻率，封裝接腳（lead) 數目隨接腳的節距下降而增加，改善用於互連此類積體電 路之連接态中的信號完整性的能力變得更重要。根據本發4SHAW/04002TW/NEO -30- 1257695 The 'group-contact tree can further affect the lntegrity than the second set of contact elements. In this manner, the device 220 enables the semiconductor device 23 to be thermally switched.妾 According to another aspect of (4), the absorber has a ground plane, and the impedance of the contact element can be controlled by: changing - the contact element of the signal pin and the ground plane _ series, or the contact element of the money pin The distance between the contact elements of the two ground pins. The n is a cross-section of the connection H according to the present invention. The connector includes a ground plane, a uniformity, and a control contact element impedance. Referring to Figure 1, a connector 250 includes a contact element 254B to be coupled to a signal pin on a semiconductor device. The connector 25G further includes a contact element 25 that is to be connected to a ground potential of the semiconductor device. Connector 250 includes a ground plane 255 formed on substrate 252. The ground plane 2 may be formed on the top surface of the substrate 252 or embedded in the substrate 252. In Figure π, the connection between contact elements 254A and 254C and ground plane 255 is shown. In actual implementation, the contact elements 254A and 254C may be connected to the ground plane 255 via a metal connection on the surface of the substrate 252 or through a metal connection embedded in the substrate 252. The port connection 250 includes a ground plane 255, which has the effect of improving the signal integrity of the AC signal through the connection: fO connection. In particular, I1 now has an integrated circuit operating at ever higher frequencies, and the number of package leads increases as the pitch of the pins decreases, improving the connection state for interconnecting such integrated circuits. The ability to signal integrity becomes more important. According to this issue

4SHAW/04002TW/NEO -31- 1257695 明，連接器250 &amp;含接地平® 255，其作用以降低雜訊以 及改善連接器之信號完整性。此外，目n所示配置中， -信號接腳之獅元件254B和接地電位之接觸元件254a 與254C間的距離G可變化，為接觸元件254β獲得所欲阻 抗。可包含το件257Α、257Β和257C以進-步控制連接哭 的電磁放射（emissiQn)和斥拒（re」eetiQn)特性。 n 7 -a- H-&quot; Hd _ 對接觸元件262 # 264以輕合至 (㈣⑽ntials哪ls)。本實施例中，接觸元 矛口，各自形成為包含分離的基部261和263。以此方式， 之連接器可用以接觸包含-對差 (th:: :構τ連接器包含埋式散熱 加強的Λ # 、、口冓，以在特定接觸元件提供 觸舉二 heatinW可道從的 員者的焦耳加熱（Joule =觸元件處的溫度上㈣度或更多。根 接觸^件的連^ ’有效地限制特定 中的埋式散聽構，溫度上相量器 連』。13二，本f明-實施例，係包含熱導平面之 ^圖13，連接器⑽包含接觸元件遲至4SHAW/04002TW/NEO -31- 1257695 The connector 250 &amp; includes a ground plane® 255 that acts to reduce noise and improve the signal integrity of the connector. Further, in the configuration shown in Fig. n, the distance G between the signal pin lion element 254B and the ground potential contact elements 254a and 254C can be varied to obtain the desired impedance for the contact element 254β. It may include τ 件 257 Α, 257 Β, and 257 C to further control the connection of electromagnetic radiation (emissiQn) and repellent (re"eetiQn) characteristics. n 7 -a- H-&quot; Hd _ to the contact element 262 # 264 to lightly match ((4) (10) ntials which ls). In this embodiment, the contact elements are each formed to include separate bases 261 and 263. In this way, the connector can be used to contact the inclusion-to-difference (th::: τ connector includes buried heat-enhanced Λ #, 冓 冓, to provide a touch of two contact heats in a particular contact element. Joule heating of the member (Joule = temperature at the touch element (four degrees) or more. The connection of the root contact ^ ' effectively limits the buried scatter structure in the specific, the temperature on the phasor connected." , the embodiment of the present invention, including the thermal conduction plane of Figure 13, the connector (10) containing the contact elements late

4SHAW/04002TW/NEO -32 - 1257695 以仙，形成於基板272之頂表面上。在基板272之 間，熱導平面277形成於基板272中。熱導平面m提供 接觸元件274A至274D散熱功能。於—實施例中，埶料 面^用銅形成。另-實施例中，熱導平面使用填充環氧樹 月曰（filled印oxy)形成，其為非導電性，而因此可 接觸出現在基板272中並連接至接觸元件274A至274D二 任何電路。操作中，當接觸元件耦合至一半導體裝置、。 經歷焦耳加_，解平面散去接觸元件產^的熱亚 根據本發明再另-方面，一連接器包含一或更多 / coaxial)接觸元件。圖14例示根據本發明之—實施 $含同軸接觸元件的連接器咖。參照圖14，連接器3〇〇 ^ -弟-接觸元件32〇及一第二接觸元件_，形成在 |板之頂表面上。接觸元件咖和_形成得彼此鄰近作 電氣隔離。本實施例巾，接觸元件320 &amp;含-基部322 ^ ^包含-孔(aperture)的外環，而接觸元件_ “ 二:4 342形成於此開口内。每一接觸元件32〇和_ 含夕個曲彈簧部。具體地，接觸元件卿包含 =ΤΓΓ2散開。曲彈簣部324形成為從i 隱f生犬出。另—方面，接觸元件_包含兩個曲彈 344A和344B，每-曲料部以概配置從基部突出:、 ，觸元件320 &lt;曲彈簧部不和接觸元件34〇之 部重豐。因此，接觸元件320和接觸 只 如此構成後，_ 可㈣互連_半_^4SHAW/04002TW/NEO -32 - 1257695 is formed on the top surface of the substrate 272. A thermal conduction plane 277 is formed in the substrate 272 between the substrates 272. The thermal conduction plane m provides the heat dissipation function of the contact elements 274A to 274D. In the embodiment, the tantalum surface is formed of copper. In another embodiment, the thermal conductive plane is formed using a filled epoxy oxy which is non-conductive and thus can be contacted in substrate 272 and connected to any of contact elements 274A through 274D. In operation, the contact element is coupled to a semiconductor device. Experiencing Joules, a solution to dissipate the heat of the contact element. According to still another aspect of the invention, a connector includes one or more / coaxial contact elements. Figure 14 illustrates a connector for implementing a coaxial contact element in accordance with the present invention. Referring to Fig. 14, a connector 3 - a contact element 32 〇 and a second contact element _ are formed on the top surface of the slab. The contact elements are formed electrically isolated from each other. In the embodiment of the invention, the contact element 320 &amp; the base-containing portion 322 ^ ^ comprises an outer ring of the aperture, and the contact element _ "two: 4 342 is formed in this opening. Each contact element 32 〇 and _ In particular, the contact element contains = ΤΓΓ 2, and the curved portion 324 is formed to be released from the i. The contact element _ contains two curved bullets 344A and 344B, each of which The curved portion protrudes from the base in a general configuration: the touch element 320 &lt; the curved spring portion is not heavy with the contact member 34. Therefore, after the contact element 320 and the contact are only configured as such, the _ (4) interconnection _ half _^

4SHAW/04002TW/NEO •33- 12576954SHAW/04002TW/NEO • 33- 1257695

同軸連接。一般而言，外部的接觸元件耦合至一接地電位 連接翻元件耦合至—錢連接，例如高頻作 號。本發明之連接器的-㈣別優點是，_接觸元件^ 調整至25G微米或更小尺寸。因此，本發明之連接器甚至 可用以提供小尺寸電子元件的同軸連接。 W 根據本發明另—方面，連接器之每—個接觸元件 含一導電黏著層於接觸元件之基部中，以改善接觸元件對 基板之黏著。圖15A至15h例示根據本發明另_實施例^ 形成-連接器陣列之製程步驟。圖以至711和圖⑽ 中類似元件給予類似編號，以簡化討論。 上。’提供—基板⑽，接觸元件將形成於其 土板102可為一石夕晶圓或陶究晶目，且可 带 ==未示於請中)。一導電黏著請二; ΐίΪ nq或假如有_，則於介_上。導電 二L 3可為—金屬層，例如銅—鈹或鈦，或導電的I 二=基礎之黏著劑’或其他導電黏著劑。接 ΐ，例Γί於黏著103上。支撐層104可為沉積的介電 任何其他料旋轉錯介電f，聚合物，或 之頂層104後’―遮罩層⑽形成於支樓層104 罩声⑽4罩層1G6結合傳統微影餘的使用，以遮 層6财撐層⑽上。在鱗層打印與顯Coaxial connection. In general, the external contact element is coupled to a ground potential. The connection flip element is coupled to a money connection, such as a high frequency signal. A further advantage of the connector of the present invention is that the _contact element is adjusted to a size of 25G microns or less. Therefore, the connector of the present invention can be used even to provide a coaxial connection of small-sized electronic components. According to another aspect of the invention, each of the contact elements of the connector includes a conductive adhesive layer in the base of the contact element to improve adhesion of the contact element to the substrate. 15A through 15h illustrate process steps for forming a connector array in accordance with another embodiment of the present invention. Similar elements in the figures 711 and (10) are given similar numbers to simplify the discussion. on. The substrate (10) is provided, and the contact member is formed on the earth plate 102, which may be a stone wafer or a ceramic crystal, and may be taken with == not shown. A conductive adhesive please two; ΐίΪ nq or if there is _, then on the _. The conductive layer L 3 may be a metal layer such as copper-bismuth or titanium, or an electrically conductive I ii-based adhesive or other conductive adhesive. Connected, for example, on the adhesive 103. The support layer 104 can be a dielectric material of any other material that is deposited as a dielectric error, a polymer, or a top layer 104 after the 'mask layer (10) is formed on the support floor 104. The cover sound (10) 4 cover layer 1G6 combined with the use of conventional micro-shadow , with a layer of 6 on the support layer (10). Printed and displayed in scales

4SHAW/04002TW/NEO -34- 1257695 ，包含區域臟至之遮罩圖案，形成 續姓亥U區^表面上，定義支撐層104受保護而免於後 15c，利用區域1G6A至露做為遮n彳f 、σ刻製程。非等向蝕刻製程的結果是，移除未被 侧，非等向賴= 非上’或部分停在導電黏著層1G3 *。因此， 輸著層⑽仍在。而編域隱 _ 雜包含區域職至 干口系以暴路支撐區域（圖15D)。 製程以實質上相同的蝕刻速率，在直立 ϊ:支=r·因此，等 支如域職至聽的頂角，如圖i5E所示。 ⑽圖挪，一金屬層1〇8形成於導電黏著声 3之表面和支撐區域10从至 /者曰 多層•積，例如二層： ^ 貝例中，接觸元件係利用以下料、：一, 二严“鈹合金接著鑛上無電务金 〈 沉積製程以=理 傳統微影事程，、4广;他傳統金屬膜沉積技術。利用 衣転〜儿積—遮罩層且圖案化為遮罩區域11〇Α4SHAW/04002TW/NEO -34- 1257695, including the area of the dirty mask pattern, forming a continuous surname Hai U area ^ surface, defining the support layer 104 is protected from the back 15c, using the area 1G6A to dew as a cover n彳f, σ engraving process. As a result of the non-isotropic etching process, the side is removed, the non-isotropic y = non-upper or partially stopped at the conductive adhesive layer 1G3*. Therefore, the transport layer (10) is still there. The domain is hidden from the regional to the dry mouth supporting the area (Fig. 15D). The process is at substantially the same etch rate, in the upright ϊ: branch = r · Therefore, the branch angle from the domain to the listening, as shown in Figure i5E. (10) Tuo, a metal layer 1〇8 is formed on the surface of the conductive adhesive 3 and the support area 10 from the multilayer to the product, for example, the second layer: ^ In the case of the shell, the contact element utilizes the following materials: Er Yan "铍 alloys and no gold on the mines. The deposition process to = traditional micro-film process, 4 wide; his traditional metal film deposition technology. Use the clothing ~ children - mask layer and patterned into a mask Area 11〇Α

4SHAW/04002TW/NEO -35- 1257695 至110C。遮罩區域110A至110C定義金屬層1〇8受保護免 於後續姓刻之區域。 接著，圖15F中的結構經歷i刻製程，以移除未被 遮罩區域110A至110C覆蓋的金屬層和導電黏著層。結 果，形成金屬部108A至108C和導電黏著部1〇^至01〇3(^ 如圖15G所示。每一金屬部108A至i〇8c包含一笑 在個別的導電黏著部上，以及-曲彈簧部形成在^的支 樓區域（酿至露）上。因此，每—金屬部之曲彈箬 部採取底下支撐區域的形狀，突出於基板表面之上，並且 有-曲率，當用來接觸-接觸點時，提供—擦刮動作。每 一金屬部之基部依附於個別的導電黏著 用以強化每一基部對基板102之黏著。以者雜 為完成連接n ’移除支撐區域職至聽（圖15H)， 例如藉由使用祕誠料向㈣㈣或其他侧製 =若支撐層使用氧化層形成，可使用緩衝氧化物侧劑 ^支撐區域。結果，獨立的接觸元件服至⑽形成 巧板102上。如此形成之接觸元件n2A至n2c之每一 2際上包含-延伸基部。如圖15H所示，每一導電黏著 二用以^伸基部之表面積，以提供更多表面積將接觸元件 又付於土板1〇2。以此方式’可改善接觸元件之可靠度。4SHAW/04002TW/NEO -35- 1257695 to 110C. The mask regions 110A to 110C define areas in which the metal layers 1 to 8 are protected from subsequent surnames. Next, the structure in Fig. 15F undergoes an engraving process to remove the metal layer and the conductive adhesive layer that are not covered by the mask regions 110A to 110C. As a result, the metal portions 108A to 108C and the conductive adhesive portions 1〇 to 01〇3 are formed (Fig. 15G. Each of the metal portions 108A to i8c contains a smile on the individual conductive adhesive portions, and - the curved spring The part is formed on the branch area of the ^ (brewed to the dew). Therefore, the curved part of each metal part takes the shape of the bottom support area, protrudes above the surface of the substrate, and has a curvature, when used for contact - At the point of contact, a wiping action is provided. The base of each metal portion is attached to the individual conductive adhesive to strengthen the adhesion of each base to the substrate 102. The connection is completed by n 'removing the support area to listen ( Fig. 15H), for example, by using the secret material to (4) (four) or other side = if the support layer is formed using an oxide layer, a buffer oxide side agent can be used. As a result, the independent contact element is served (10) to form the template 102. Each of the contact elements n2A to n2c thus formed includes an extension base. As shown in Fig. 15H, each of the conductive adhesives serves to extend the surface area of the base to provide more surface area for the contact elements to be paid. On the soil board 1〇2. This side The formula ' improves the reliability of the contact elements.

以亡°羊細祝明係供例示本發明特定實施例，而非欲為 义制。本發明_内眾多修改與變化是可能的。舉例而 4SHAW/04002TW/NEO -36- I257695 會：板 茸k ,χ , 不心月之連接态可用作使用墊戋 ;==球為電連接或接觸點的任何類型區域 置 本發明由所附申、請;=類型欲娜^ 【圖式簡單說明】 接接 =’用以接合基板上的金屬塾。 接觸凡件，用以接觸焊料球。 果。圖2Β和圖2C例示附接焊料球至基板之金屬塾的結 剖面i。 输縣發仅—實細，辭連接器之 ，例示使用圖3A之連接器接合The specific embodiments of the present invention are shown by way of example, and are not intended to be a Numerous modifications and variations are possible within the invention. For example, 4SHAW/04002TW/NEO-36- I257695 will: the plate keel k, χ, the connection state of the unintentional month can be used as a pad 戋; == the ball is an electrical connection or any type of contact point of the type of the present invention Attachment, please; = type 欲娜 ^ [Simple description of the diagram] 接 = ' used to bond the metal 上 on the substrate. Touch the parts to contact the solder balls. fruit. 2A and 2C illustrate a junction profile i of a metal crucible to which a solder ball is attached to a substrate. Loss of the county only - solid, resigned, exemplified using the connector of Figure 3A

圖4A和 不同半導體裝置 圖5A和5B例示根據 圖6A和6B例示㈣士 &amp;为A她例之連接為。 圖7A至7H例^月之另一實施例之連接器。 之連接器的製程步驟。康柄明之—實施例，形成圖3A 圖8A至8H。Fig. 4A and different semiconductor devices Figs. 5A and 5B illustrate the connection of (4) 士 &amp; A for her example according to Figs. 6A and 6B. 7A to 7H illustrate a connector of another embodiment of the month. The process steps of the connector. In the case of the embodiment, FIG. 3A, FIG. 8A to FIG. 8H are formed.

之連接器的製程步驟明之—實施例，形成圖5A 圖9A至9H例不根據本發明之另-實施例，形成圖5A 4S H AW/04002TW/N ΕΟ -37- 1257695 之連接器的製程步驟。 的剖^和⑽购侧之另—糊之-連接器 此連咖的剖面圖， 抗之接地平面。°“U7G '生以及供控制接觸元件阻 對接本發明連接11之另—實施例•，財使用-對接觸兀_合至-對差·號。 中使用 面之：3器例不根據本發明之-實施例’顯示包含熱導平 圖Ϊ4例示根據本發明 竇 觸元件的連接器。 貝關顯不包含同軸接 接哭L1丨5A i15Η例示根據本發明之另一實施例，形成連 接态陣列之製程步驟。 圖式元件符號說明 10連接器 16金屬墊 22焊料球 50連接器 55Α基部 62基板 72基板 75Β曲彈簧部 84焊料球 12接觸元件 18膜 24基板 52基板 55Β曲彈簧部 64金屬墊 74接觸元件 75C曲彈簧部 92基板 14基板 20基板 26金屬墊 54接觸元件 60半導體裝置 7〇連接器 75Α基部 80半導體裝置 93接觸元件 4S H AW/04002TW/N ΕΟ -38- 1257695 94A基部 94B第一曲彈簧部 94C第二曲彈簧部 95接觸元件 96基板 97A基部 97B第一曲彈簧部 97C第二曲彈簧部102基板 103導電黏著層 103A，103B， 103C導電黏著部 104支撐層 104A，104B， 104C支撐區域 106遮罩層 106A，106B， 106C區域 108金屬層 108A，108B， 108C金屬部 110A，110B， 110C遮罩區域 112A，112B， 112C接觸元件 122基板 124支撐層 124A，124B支撐區域 126遮罩層 126A，126B遮罩區域 128金屬層 128A，128B金屬部 130A，130B區域132接觸元件 142基板 144支撐層 144A，144B支撐區域 145預定義電路 146遮罩層 147頂金屬部 148金屬層 148A，148B金屬部 150遮罩層 152接觸元件 220連接器 222基板 224，226，228第一組接觸元件 225，227第二組接觸元件 230半導體裝置 232金屬墊 250連接器 252基板 254A， 254B， 254C接觸元件 255接地平面 257A，257B， 257C元件 261，263 基部 262，264接觸元件 270連接器 272基板 274A，274B， 274C，274D接觸元件The process steps of the connector are as follows - an embodiment, forming a process of forming a connector of FIG. 5A, FIG. 9A to FIG. 9H, which is not according to another embodiment of the present invention, forming the connector of FIG. 5A 4S H AW/04002TW/N ΕΟ -37-1257695 . The section of the cross-section of the café, the cross-section of the café, against the ground plane. ° "U7G ' raw and the control contact element is blocked from the other connection of the invention 11 - the embodiment of the invention - the use of the contact - 兀 _ _ to the difference 号 。 。 。 。 。 。 。 。 。 。 。 。 。 The embodiment - shows a connector comprising a thermal conduction plan 例 4 exemplifying a sinus contact element according to the present invention. The singularity does not include a coaxial connection cry L1 丨 5A i15 Η exemplified according to another embodiment of the present invention, forming a connected state array Process steps: Figure component symbol description 10 connector 16 metal pad 22 solder ball 50 connector 55 Α base 62 substrate 72 substrate 75 弹簧 spring portion 84 solder ball 12 contact element 18 film 24 substrate 52 substrate 55 弹簧 spring portion 64 metal pad 74 contact element 75C curved spring portion 92 substrate 14 substrate 20 substrate 26 metal pad 54 contact element 60 semiconductor device 7 〇 connector 75 Α base 80 semiconductor device 93 contact element 4S H AW / 04002TW / N ΕΟ -38 - 1257695 94A base 94B One spring portion 94C second curved spring portion 95 contact element 96 substrate 97A base portion 97B first curved spring portion 97C second curved spring portion 102 substrate 103 conductive adhesive layer 103A, 103B, 103C conductive adhesive portion 104 support layer 104A, 104B, 104C support region 106 mask layer 106A, 106B, 106C region 108 metal layer 108A, 108B, 108C metal portion 110A, 110B, 110C mask region 112A, 112B, 112C contact member 122 substrate 124 support layer 124A, 124B support region 126 mask layer 126A, 126B mask region 128 metal layer 128A, 128B metal portion 130A, 130B region 132 contact element 142 substrate 144 support layer 144A, 144B support region 145 predefined circuit 146 mask layer 147 top Metal portion 148 metal layer 148A, 148B metal portion 150 mask layer 152 contact element 220 connector 222 substrate 224, 226, 228 first set of contact elements 225, 227 second set of contact elements 230 semiconductor device 232 metal pad 250 connector 252 Substrate 254A, 254B, 254C contact element 255 ground plane 257A, 257B, 257C element 261, 263 base 262, 264 contact element 270 connector 272 substrate 274A, 274B, 274C, 274D contact element

4SHAW/04002TW/NEO -39- 1257695 277熱導平面 322基部 342部 300連接器 320第一接觸元件 324曲彈簧部 340第二接觸元件 344A，344B曲彈簧部4SHAW/04002TW/NEO -39- 1257695 277 Thermal Conductive Plane 322 Base 342 Section 300 Connector 320 First Contact Element 324 Curved Spring Section 340 Second Contact Element 344A, 344B Curved Spring Section

4SHAW/04002TW/NEO -40-4SHAW/04002TW/NEO -40-

Claims (1)

1257695 十、申請專利範圍 1. 個塾，包含 ^接!！，μ電連接形祕—轉辟置上之複數 •基板，以及 複數個導電材料接觸元件形成於該基板上，&gt; 接觸元件包含-基部依附於絲板之職面，似 Γ:=Γ ’並具有一末端突出於該基板上，：Ϊ 弹育邛形成為從一接觸平面彎開 ：曲 擦刮動 =導體裝置之-__，職提供接合 其中該複數個接觸元件係以 、離0 2·如凊求項1所述之連接器， 小於約250微米之一節距互相分 i—===，接觸元件之― 作，其所產生之-擦刮距離達欲===之的=動 個接觸元种之 直立外部偏力接合墊。，體衣置之—_墊，且藉應用- 5·如明求項1所述之連哭， 和該彈簧部該基部 4SHAW/04002TW/NEO 1257695 —如μ求項^述之連接器，其中該複數個接觸元件之今 ^係使用ϋ電材料形成，而該複數 = 該彈簧部係使用―第二導電材料縣。 ^件之 ^如請求項5所述之連接器，其中該複數個接觸元 弟一個的該彈簧部係鑛有一導電材料。 8.如請求項5所述之連接器，其中該複數個接 ^^ (CuBe) ^ 鎳/金夕層所組成之群組的一材料製造。 ^如請求項1所述之連接器，其中每一接觸元件之該彈簧 部具有一彈性工作範圍在該接觸元件之一電路徑長度的等 級。 10·如請求項1 的该塾之表面。 所述之連接裔’其中該接觸平面包含被接觸 11'如明求項1所述之連接器，其中該連接器係設置以連接 至形成於一半導體晶圓上之複數個墊，此等墊間以小於或 約50微米之一節距。 12·如凊求項1所述之連接器，其中該連接器係供連接至一 基板柵格陣列裝置之複數個墊。 4SHAW/04002TW/NEO -42- 1257695 13. 如請求項1所述之連接器，其中該連接器係供連接至形 成於該半導體裝置上之複數個焊料球，焊料球係形成為具 有小於或約250微米之一節距。 14. 如請求項13所述之連接器，其中該接觸平面包含一平 面相切於欲接觸的該等焊料球之侧表面。 15. 如請求項1所述之連接器，其中每一接觸元件之該曲彈 簧部包含一第一曲彈簧部，且每一接觸元件更包含一第二 曲彈簧部係與該第一曲彈簧部位置相對，該第二曲彈簧部 從該基部延伸，並具有一末端突出於該基板之上，該第二 曲彈簧部形成為從該接觸平面彎開，並具有一曲率，當接 合該半導體裝置之一個別墊時，用以提供一受控制的擦刮 動作。 16. 如請求項15所述之連接器，其中每一接觸元件包含兩 個或更多曲彈簧部從該基部延伸，每一該曲彈簧部具有一 末端突出於該基板之上，形成為從該接觸平面彎開，並具 有一曲率，當接合該半導體裝置之一個別墊時，用以提供 一受控制的擦刮動作。 17β如請求項15所述之連接器，其中該連接器供連接至形 成於該半導體裝置上的複數個焊料球，每一接觸元件之該 第一曲彈簧部和該第二曲彈簧部接合一個別焊料球於該焊 料球之該侧表面上。 4SHAW/04002TW/NEO -43- 1257695 18·如請求項15所述之連接器，复一 第二曲彈簧部以一螺旋配置突出於、兮第一曲彈簧部和該 19·如請求項15所述之連接器，复 端面對該複數個接觸元件之一第二:忒弟—曲彈簧部之末 部之末端。 接觸凡件之第二曲彈簧 20 .如請求項15所述之連接哭，盆 一第一桩總斤杜之^ ra /、中该设數個接觸元件之 件之该弟—曲彈簧部與該 成為背對背，且該個別的末端從該基部面向；係形 _元件包含 機械性質異於該第二接觸元件=機械70件具一 22·如請求項21所述之連接 —曲彈簧部具有nJ：作觸元件包含 作範圍大於該第作賴’該第二彈性工 -曲rlf項21二述之連接器，其中該第—接觸元件包含 該第1=以=二距離突出於該基板之該頂表面上，而 板之&gt;了1车兀件已含一曲彈簧部以一第二距離突出於該基 板之麵表面上，該第二距離大於該第一距離。 4S H AW/04002TW/N ΕΟ -44- 1257695 24·如請求項21所述之連接器， -曲彈簧部需要一第—接觸力，而、::第-接觸元件包含 曲彈簧部需要—第二接觸力=弟二接觸元件包含— 觸力。 ^弟—接觸力大於該第一接 25.如請求項24所述之連接哭， -或更多曲彈簧部延伸自祕°「中知—接觸元件包含 複數個曲彈簧部延伸自該基:二=該第二接觸元件包含 接觸元件具有更多曲彈簧部。μ苐一接觸元件比該第一 26.如請求項21所述之連接哭 f —金屬成分組成，而該第Γ接觸、接觸^件由— 類型之-第二金屬成分組成。兀由異於該第-金屬 請求項21所述之連接器 具-弟-厚度的一金屬 Ή弟一接觸7L件係由 異於該第-厚度之—第_曰严的而該第二接觸元件係由具 弟一；度的—金屬層組成。 28·如請求们所述之連接器、， —弟-群組之接觸元件和：、&quot;讀個接觸轉包含 群組之接觸元件相離_第~^、、且之接觸树’該第— 件相離大於該第—節距 而該第二群組之接觸元 牙r-食卩足巨〇 29.如請求項1所述之連接器 其中遠複數個接觸元件包含 4SHAW/04002TW/NEO -45- 30. 30.1257695 -接觸元件具有 :含，簧部具 -曲接其中該第-接觸元件包含 3-2曲所述之連接器’其中該第—接觸元件包含 二ΪΓ=有—弟—電感—e)，而該第二接觸 第-ii。#黃部具有—第二電感，該第二電感大於該 33.如求項29所述之連接器，其中該第一接觸元件包含 一曲，黃部具有—第—載流（oirrent carrying)能力， 而該第二接觸元件包含—曲彈簧部具有-第二载流能力， 該第二載流能力大於該第—載流能力。 34.,如請求項1所述之連接器，更包含一或更多導電接地平 面形成於錄板上或嵌人於絲板中，魏數個導電接地 4SHAW/04002TW/NEO -46 - 1257695 觸元 =面鄰近但電隔離該複數個_元件巾之—經選擇接 35.如請求項34所述之連接器，其中該 =面和該細固接觸元件中之 ==接地 離，係變化以建立該接觸元件之-所欲阻^件間的一距 36·如請求項34所述之連接哭，苴一 平面電連接至該複數個_ “之、_第1_=電接地 iHyH34之ί接器，其中該複數個接觸元件包 ;差1=二;第t接觸元件，用以連接至形成= 二接η,亥—或更多導電接地平面與該第 一所欲=弟二距離，係變化以建立該接觸元件之 38.如請求項1所述之連接器 之上或之巾，該電路電魅4軸於该基板 -接觸元件。电顧至細數健觸元件中之至少 ΐ中ΐ請2 =述之連接器，其中該電路由嵌入於該基 攸τ之一或更多金屬層形成。 40. 如％求項39所述之連接器，其中該 複數個接觸元件之 4SHAW/04002TW/NEO -47- 1257695 路係使接:::成該第-接觸元件和該電 41·如請求項1所述之連接哭 基板中，域魏油.‘ 42·如請求項41所述之 平面，且為電隔離而开彡出TO &quot;中该熱導平面包含一銅 接觸元件間與频數個接觸元件中之每一 ’其中該熱導平面包含一填 觸元件之一第一個 43·如請求項41所述之連接哭，苴 充的環氧翻旨，且形成絲^*、中Θ 緊密接觸。 〜、細數個接 至少—同軸&gt;妾°°，、中该複數個接觸元件包含 」釉接觸7C件，該_接觸轉 一弟一接觸構件，包含 自其延伸，該奠一上、3弟—基部和一第一曲彈簣部 ^ Μ 土邛疋義—開口；以及 弟一接觸構件，包合—楚_甘A 自其延伸，鄉二絲形成柯m和—第二曲彈簧部 中知-接觸構件與該第二接觸構件電隔離。 -48- 1257695 置之複數個焊料 46·-種連接器，供電連接一球挪格陣列 球，該連接器包含： 基板；以及 觸元:的接觸元件形成於該基板上，每-接 曲彈簧 該基板上方， 母曲每貫部具有一末端突出於 該球柵::列部係形成，合 形成為從該接觸平面-開，並且有^面’该曲彈簧部 袼陣列裝置之該’當接合該球柵 動作。 用以美供一党控制的擦刮 ^如請求項46所述之連接器 面相切於欲_辩料叙·表接軒面包含一平 48. 如請求項46所述之連接哭，1 部和該複數個曲彈箬部係用° ^、母—接觸元件之該基 結構。 係使用相同導電材料形成為-連續 49. 如請求項46所述之遠技哭甘&amp; «部係使用一第一導命其中該複數個接觸元件之 之該彈簧部係使用—第該複數個接觸元件 4SHAW/04002TW/NEO -49- 1257695 =r=(c=個= /銅/鎳/金多層所組成之群組的—材料製造。—不錄鋼 器的方法，該方 52. —種形成包含複數個接觸元件之一 法包含·· 提供一基板； 形成一支撐層於該基板上； 圖案化該支擇層’以定義複數個支撐元件； 形成圓等Γ該複數個支標元件’以在每-支擇元件頂上 上義與ΪΤ支標元件上； ”包含-第-金屬部於該基板上，以】_第=屬 延伸自_—金屬部並部分橫過—個別支撐元件之頂 移除該複數個支撐元件， 其中如此形成之該複數個接觸 部依附於該基板，以及一曲骝馀β ㈦已3丞 -東端穿㈣3 平黃部從該基部延伸、並具有 邱相對該基板之該表面，該曲彈箬 部形成為具有一凹曲率。 斤” -5〇 - 4SHAW/04002TW/NEO 1257695 It凊求項52所述之方法，其中形成—支撐層於該基板 沉積一介電材料層。 =如請求項53所述之方法，其中該介電材料包含一旋 主佈玻璃層 '一四乙基正矽酸鹽（TE〇s)層、 = 學氣相沉積⑽D)氧化層。 ^電氷化 求項52所狀綠’其巾®航該讀層以定義 硬數個支撐元件包含久我 形成一遮罩層於該支撐層上方； ，案化該遮罩層，以定義該複數個支撐元件的位置； 用名圖案化遮罩層，專向银刻該支撐層；以 移除該圖案化遮罩層。 曰， 元件包=M 53所4之方法’其巾等向侧該複數個支擔 複數齡躲料之―_化學物，電漿餘刻該 求項53他咖複數個讀 劑’濕姓刻該複數個 支撐糊該介1材料之—糊 4SHAW/04002TW/NEO -51- 1257695 法’其中形成，層於該基板 沉積一金屬層於該基板上。 59·如明求項58所述之方 沉積製程、-物理氣相^制其中而儿積使用一化學氣相 製程。 .孔相几積製程、-電織程、或-濺鑛 60 如凊求項52所述之方法，盆 複數個接觸元件包含·· 卞化該金屬層以定 形成一遮罩層於該金屬層上方； 罩層’以定義該複數個接觸元件的位置· f用该圖案化遮罩層，钱刻該金屬層； 置’ 義 移除該圖案化遮罩層 以及 61 包含如明求項52所述之方法’其中移除該複數個支撐元件 濕姓刻以移除該複數個支撐元件。 62.如請求項52所述之方法，1中 簧部形成為從—接觸平面-開，、並具有件:::彈 半導體裝置之-個難時食提供 6二==包方;;其中圖案化該金屬層以定義 4SHAW/04002TW/NEQ -52- 1257695 定義-，-接觸元件，包含―第—金屬部於該基板 上’以及-第二金屬部自該第—金屬部以—螺旋配置延 伸，並部分橫過一個別支撐元件之頂部。 64.如請求項52所述之方法，其巾該金屬層 義複數個接觸元件包含： 定義-第-接觸元件，包含—第—金屬 並鄰近一第一支撐元件之一第一端，=板上 ^ ^，以及一第二金屬部自 遠弟-金屬部延伸並部分橫過該第—支撑元件之頂部；以 及 ㈣Ϊ義:第ΐ;觸元件’包含—第-金屬部於該基板上 ^近-^支撐元件之―第二端，該第二端械該第一 ^ ’以及-弟—金屬部自該第—金屬部 第二支撐元件之頂部， 其中如此形成之該第—接觸元件和該第二接觸元件具 有面對彼此的個別末端。 〃 倾金屬層以定 、'部第ΙΪ觸i件’包含—第—金屬部於該基板上 亚鄰近弟一支撐轉之—第一端 該第-金胸延伸並部分橫過該第—支撐元 及 、,含—第-金屬部於該基板上 並* 牙兀之—第二端，該第二端鄰近該第- 4S H AW/04002TW/N ΕΟ -53- 1257695 支撐兀件之該H以及—第二金 延伸並部分橫過該第二支撐元件之頂部，^第一i屬部 其中如此形成之該第一接觸元件和兮 有連接的基部，並具有背對彼此的_末；^觸元件具 呢-種供形成包含複數個接觸元件之 从 方法包含： 運接為的方法，該 提供一基板； 提供一導電黏著層於該基板上； 形成一支撐層於該導電黏著層上； 圖案化該支撐層，以定義複數個支撺元件. 等向侧該複數個支撐元件， ’ 形成圓角； 母支撐兀件頂上 上 ;形成-金屬層於該導電黏著層上與該複數個支撐元件 圖案化該金屬層和該導電黏著 二;其1 一接觸元件包含；金;== 移除該複數個支標元件， 部依:ί 成之該複數個接觸元件之每一個包含一基 方 率 曲彈箬部’該導電黏著依附於該基板，以及 ，部延伸、並具有—末端突出該基板上 。' μ土板之该表面，該曲彈簧部形成為具有一凹曲 4SHAW/04002TW/NEO -54- 1257695 67 複數個支樓树3:之^射_傾支撐層以定義 形成—遮罩層於該支撐層上方； 以及 罩Πί,個支㈣件的位置; _停止於該_‘2=;糊層，該非等 移除該圖案化遮罩層。 電黏著之方法，其中圖案化該金屬層和該導 考層以疋義稷數個接觸元件包含： 形成一遮罩層於該金屬層上方； 罩層’以定義該複數個接觸元件的位置； 利用该圖案化遮罩層，蝕刻該金屬層· 電黏=該：化遮罩層和該複數個 移除該圖案化遮罩層。 声日66所述之方法，其巾該支樓層包含一介電 运，且專向蝕刻該複數個支撐元件包含： 使用可蝕刻該介電材料之一蝕刻化學 複數個.支撐元件。 ㈣⑨水侧邊 層，且等支樓層包含一介電 4SHAW/04002TW/NEO -55- 1257695 使用可餘刻該介電材料之一餘刻劑，濕蚀刻該複數個 支撐元件。 71.如請求項66所述之方法，其中形成一金屬層於該基板 上包含： 沉積一金屬層於該基板上，係使用一製程選自一化學 氣相沉積製程、一物理氣相沉積製程、一電鍍製程、或一 濺鍍製程。1257695 X. Patent application scope 1. Each 包含, including ^ 接!! , μ electrical connection shape - the conversion of the plurality of substrates, and a plurality of conductive material contact elements formed on the substrate, &gt; contact elements include - the base attached to the surface of the silk plate, like: Γ ' And having an end protruding from the substrate, the Ϊ 弹 邛 邛 邛 邛 邛 邛 从 = = = = = = = = = = = = = = = = = = = = = = = = = = = = = = = = = = = = = = 导体In the connector of claim 1, the pitch of one of less than about 250 micrometers is divided into i-===, and the contact element is generated, and the wiping distance is up to === An upright external biasing bond pad of the contact element. , the body is placed on the _ pad, and by the application - 5 · as described in Item 1 and crying, and the spring portion of the base 4SHAW / 04002TW / NEO 1257695 - as described in the connector, wherein The plurality of contact elements are formed using a tantalum material, and the complex number = the spring portion uses a "second conductive material county." The connector of claim 5, wherein the spring portion of the plurality of contact elements has a conductive material. 8. The connector of claim 5, wherein the plurality of materials of a group of ^^(CuBe)^ nickel/gold layers are fabricated. The connector of claim 1 wherein the spring portion of each contact element has an elastic working range equal to the electrical path length of one of the contact elements. 10. The surface of the item as claimed in item 1. The connector of the connection wherein the contact plane comprises a connector 11 is as described in claim 1, wherein the connector is configured to be connected to a plurality of pads formed on a semiconductor wafer, such pads A pitch of less than or about 50 microns. 12. The connector of claim 1, wherein the connector is for a plurality of pads connected to a substrate grid array device. A connector according to claim 1, wherein the connector is for connecting to a plurality of solder balls formed on the semiconductor device, and the solder ball is formed to have less than or about One pitch of 250 microns. 14. The connector of claim 13 wherein the contact plane comprises a planar surface tangential to the side surfaces of the solder balls to be contacted. 15. The connector of claim 1, wherein the curved spring portion of each contact element comprises a first curved spring portion, and each contact member further comprises a second curved spring portion and the first curved spring Opposite the position, the second curved spring portion extends from the base and has an end protruding above the substrate, the second curved spring portion being formed to be bent from the contact plane and having a curvature when the semiconductor is bonded One of the devices is individually padded to provide a controlled wiping action. 16. The connector of claim 15 wherein each contact element comprises two or more curved spring portions extending from the base, each of the curved spring portions having an end projecting over the substrate, formed to The contact plane is curved and has a curvature to provide a controlled wiping action when engaging one of the individual pads of the semiconductor device. The connector of claim 15, wherein the connector is connected to a plurality of solder balls formed on the semiconductor device, and the first curved spring portion and the second curved spring portion of each contact member are joined to each other. Individual solder balls are on the side surface of the solder ball. 4SHAW/04002TW/NEO -43- 1257695. The connector of claim 15, wherein the second curved spring portion protrudes in a spiral configuration, the first curved spring portion, and the 19th item The connector, the complex end face of the second of the plurality of contact elements: the end of the end of the spring-curved spring portion. Contacting the second curved spring 20 of the piece. As shown in claim 15, the connection is crying, the first pile of the pot is the first one, and the middle part of the contact element is the spring part of the The pair is back-to-back and the individual ends are facing from the base; the tether element comprises a mechanical property different from the second contact element = the mechanical 70 piece has a connection as described in claim 21 - the curved spring portion has nJ The contact element includes a connector having a range greater than that of the second elastic-curf rf item 21, wherein the first contact element includes the first == two distances protruding from the substrate On the top surface, the panel&gt; 1 rim member has a spring portion protruding at a second distance from the surface of the substrate, the second distance being greater than the first distance. 4S H AW/04002TW/N ΕΟ -44- 1257695 24. The connector according to claim 21, - the curved spring portion requires a first contact force, and the:: the first contact member includes a curved spring portion - the first Two contact forces = brother two contact elements contain - contact force. ^弟—The contact force is greater than the first connection 25. The connection as described in claim 24 is crying, or - more of the spring portion extends from the secret. "The known-contact element comprises a plurality of curved spring portions extending from the base: Two = the second contact element comprises a contact element having a more curved spring portion. The μ苐 contact element is composed of the first 26. The connection as described in claim 21 is composed of a metal component, and the second contact is in contact with The component consists of - the second metal component of the type - 兀 is different from the first thickness of the metal device of the connector - brother-thickness of the first metal request - The first contact element is composed of a metal layer of the same degree; 28. The connector of the request, the brother-group contact element and:, &quot Reading a contact to include a contact element of the group _ _ ^,, and the contact tree 'the first piece is separated from the first - pitch and the second group of contact element r- eater足巨〇29. The connector of claim 1 wherein the plurality of contact elements comprise 4SHAW/04002TW/NEO-4 5- 30. 30.1257695 - The contact element has: an inclusive, a spring-to-curved connection, wherein the first contact element comprises a connector of 3-2, wherein the first contact element comprises two turns = have a brother-inductor - e), the second contact - ii. #黄部 has a second inductance, the second inductance is greater than the 33. The connector of claim 29, wherein the first contact element comprises a song, The yellow portion has an -iirrent carrying capability, and the second contact element includes a curved spring portion having a second current carrying capacity, the second current carrying capacity being greater than the first current carrying capacity. The connector as claimed in claim 1 further comprises one or more conductive ground planes formed on the board or embedded in the silk plate, and the number of conductive grounds 4SHAW/04002TW/NEO-46 - 1257695 touch elements=face Adjacent to, but electrically isolating the plurality of component wipers, the connector of claim 34, wherein the = face and the == grounding in the fine contact element are changed to establish the contact a distance between the components and the desired resistance 36. The connection as described in claim 34 is crying, 苴The plane is electrically connected to the plurality of _ ", _ 1_ = electrical ground iHyH34 y connector, wherein the plurality of contact element packages; difference 1 = two; t t contact elements for connection to formation = two η , or - or more conductive ground planes and the first desired = two distances, the change to establish the contact element 38. The connector or the towel as described in claim 1, the circuit electric charm 4 The shaft is on the substrate-contact element. The connector is at least 2 to the connector, wherein the circuit is formed by one or more metal layers embedded in the base 攸τ. 40. The connector of claim 39, wherein the plurality of contact elements of the 4SHAW/04002TW/NEO-47-1257695 circuit is connected::: the first contact element and the electrical 41. 1 in the connection of the crying substrate, the domain Wei oil. '42. The plane as described in claim 41, and is electrically isolated and opened TO &quot; in the thermal conduction plane containing a copper contact element and frequency Each of the contact elements, wherein the thermal conduction plane comprises one of the first contact elements 43. The connection as described in claim 41 is a crying, filling of the epoxy, and forming a wire ^*, medium紧密 Close contact. ~, a plurality of connections at least - coaxial > 妾 ° °, wherein the plurality of contact elements comprise "glaze contacts 7C, the _ contact turns a younger one contact member, including extending therefrom, the foundation, 3 Brother - base and a first piece of 篑 ^ ^ Μ 邛疋 — 开口 开口 开口 以及 以及 以及 以及 以及 以及 以及 以及 以及 以及 以及 以及 以及 以及 以及 以及 以及 以及 以及 以及 以及 以及 以及 以及 以及 以及 以及 以及 以及 以及 以及 以及 以及 以及 以及 以及 以及The contact-contact member is electrically isolated from the second contact member. -48- 1257695 A plurality of solders 46-type connectors are connected to a ball-aligned array ball, the connector comprises: a substrate; and contact elements of the contact elements are formed on the substrate, each-joint spring Above the substrate, each of the mother curves has an end protruding from the ball grid: a column portion is formed, formed to be open from the contact plane, and has a surface of the curved spring portion Engage the ball grid action. Wiping for US party control ^ As described in claim 46, the connector face is tangent to the smattering. The surface of the connector contains a flat 48. The connection as described in claim 46 is crying, 1 part and The plurality of curved arch portions are formed by the base structure of the ^ ^ mother-contact element. Using the same conductive material to form - continuous 49. As described in claim 46, the system uses a first guide, wherein the spring portion of the plurality of contact elements is used - the plural Contact elements 4SHAW/04002TW/NEO -49- 1257695 =r=(c= copper/nickel/gold multi-layered group - material manufacturing. - method of not recording steel, the party 52. Forming a method comprising a plurality of contact elements comprising: providing a substrate; forming a support layer on the substrate; patterning the support layer to define a plurality of support elements; forming a circle or the like; the plurality of branch elements 'on top of each of the support elements and on the top of the support element; "includes - the - metal part on the substrate, to the _th = genus extends from the _ - metal part and partially traverses - individual support elements The plurality of support members are removed from the top, wherein the plurality of contact portions thus formed are attached to the substrate, and a curved 骝馀β (7) has been 3丞-East end-through (4) 3 flat yellow portion extending from the base and having a relative The surface of the substrate, the curved portion The method of claim 52, wherein the forming-supporting layer deposits a layer of dielectric material on the substrate as described in claim 53. The method, wherein the dielectric material comprises a spin-on-glass layer of a 'tetraethyl ortho-sulphate (TE〇s) layer, = a vapor deposited (10) D) oxide layer. ^Electric ice-resolved item 52-shaped green 'the towel' to read the layer to define a hard number of support elements containing a long time to form a mask layer over the support layer; the mask layer is defined to define the plural Position of the support member; patterning the mask layer by name, specifically engraving the support layer; to remove the patterned mask layer.曰, component package = M 53 method 4 'the towel side to the side of the plurality of support for the number of years of hiding material _ _ chemical, plasma remnant of the request 53 his coffee multiple reading agent 'wet surname The plurality of support pastes are formed by a paste 4SHAW/04002TW/NEO-51- 1257695. The layer is formed on the substrate and a metal layer is deposited on the substrate. 59. The method described in claim 58 is a deposition process, a physical gas phase, wherein a chemical vapor phase process is used. Hole phase stacking process, electrospinning process, or -spraying 60. The method of claim 52, wherein the plurality of contact elements comprise: smashing the metal layer to form a mask layer on the metal Above the layer; a cover layer 'to define the position of the plurality of contact elements · f to use the patterned mask layer, to engrave the metal layer; to remove the patterned mask layer and 61 to include The method of 'removing the plurality of support members to remove the plurality of support members. 62. The method of claim 52, wherein the spring portion of the first spring is formed from the contact plane-opening, and has a member::: a hard-to-use semiconductor device provides 6 two == package side; The metal layer is patterned to define 4SHAW/04002TW/NEQ-52-1257695--, a contact element comprising a "metal portion on the substrate" and - a second metal portion from the first metal portion - a spiral configuration Extend and partially traverse the top of a different support element. 64. The method of claim 52, wherein the plurality of contact elements of the metal layer comprises: a definition-first contact element comprising - a metal and adjacent to a first end of a first support element, = board Upper ^ ^, and a second metal portion extending from the far-child portion and partially across the top of the first support member; and (d) Ϊ meaning: ΐ; contact element 'containing - the first metal portion on the substrate ^ a second end of the second support member, the second end of the first ^ and - di-metal portions from the top of the second support member of the first metal portion, wherein the first contact member and The second contact element has individual ends that face each other. 〃 tilting the metal layer to define, the 'partial touch of the i-piece' contains - the - metal portion on the substrate sub-adjacent to the support of the support - the first end of the first - golden breast extends and partially across the first support And a second portion of the first metal portion on the substrate and adjacent to the gingival - the second end adjacent to the H -4S H AW/04002TW/N ΕΟ -53 - 1257695 supporting member And a second gold extending and partially traversing the top of the second support member, wherein the first i-portion is formed by the first contact member and the connected base, and has a back-to-back _ end; The method for forming a plurality of contact elements includes: a method of: providing a substrate; providing a conductive adhesive layer on the substrate; forming a support layer on the conductive adhesive layer; Patterning the support layer to define a plurality of support members. The plurality of support members are equilaterally oriented, 'forming a rounded corner; a top surface of the female support member; forming a metal layer on the conductive adhesive layer and the plurality of supports The component patterns the metal layer and the conductive The first contact element comprises: gold; == removes the plurality of sub-components, and the portion of the plurality of contact elements comprises: a base rate of the elastic portion of the plurality of contact elements. Attached to the substrate, and the portion extends and has an end projecting on the substrate. The surface of the 'μ soil plate, the curved spring portion is formed to have a concave curved shape 4SHAW/04002TW/NEO-54-1257695 67 a plurality of branch trees 3: a tilting support layer to define a formation-mask layer Above the support layer; and the position of the cover Πί, a branch (four); _ stop at the _'2=; paste layer, the unequal removal of the patterned mask layer. The method of electrically bonding, wherein patterning the metal layer and the guiding layer to the plurality of contact elements comprises: forming a mask layer over the metal layer; and forming a cap layer to define a position of the plurality of contact elements; The patterned metal layer is etched using the patterned mask layer. The photoresist layer and the plurality of patterned mask layers are removed. The method of claim 66, wherein the support comprises a dielectric, and the etching of the plurality of support members comprises: etching a plurality of support members using one of the dielectric materials etchable. (d) 9 water side layer, and the equal support floor contains a dielectric 4SHAW/04002TW/NEO -55- 1257695 The plurality of support elements are wet etched using a residual agent of the dielectric material. The method of claim 66, wherein forming a metal layer on the substrate comprises: depositing a metal layer on the substrate, using a process selected from a chemical vapor deposition process, a physical vapor deposition process , an electroplating process, or a sputtering process. 4SHAW/04002TW/NEO -56-4SHAW/04002TW/NEO -56-
TW093137786A 2003-12-08 2004-12-07 Connector for making electrical contact at semiconductor scales and method for forming same TWI257695B (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US10/731,213 US20050120553A1 (en) 2003-12-08 2003-12-08 Method for forming MEMS grid array connector
US10/731,669 US7244125B2 (en) 2003-12-08 2003-12-08 Connector for making electrical contact at semiconductor scales

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TW200532880A TW200532880A (en) 2005-10-01
TWI257695B true TWI257695B (en) 2006-07-01

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EP1697989A2 (en) 2006-09-06

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