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TWI256110B - Nanopatterned templates from oriented degradable diblock copolymer thin films - Google Patents

Nanopatterned templates from oriented degradable diblock copolymer thin films

Info

Publication number
TWI256110B
TWI256110B TW93121267A TW93121267A TWI256110B TW I256110 B TWI256110 B TW I256110B TW 93121267 A TW93121267 A TW 93121267A TW 93121267 A TW93121267 A TW 93121267A TW I256110 B TWI256110 B TW I256110B
Authority
TW
Taiwan
Prior art keywords
nanopatterned
polymer blocks
templates
thin films
diblock copolymer
Prior art date
Application number
TW93121267A
Other languages
Chinese (zh)
Inventor
Rong-Ming Ho
Chu-Chieh Lin
Hui-Wen Fan
Bao-Tsan Ko
Yeo-Wan Chiang
Original Assignee
Ind Tech Res Inst
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from US10/850,169 external-priority patent/US7632544B2/en
Application filed by Ind Tech Res Inst filed Critical Ind Tech Res Inst
Application granted granted Critical
Publication of TWI256110B publication Critical patent/TWI256110B/en

Links

Landscapes

  • Manufacture Of Porous Articles, And Recovery And Treatment Of Waste Products (AREA)
  • Moulding By Coating Moulds (AREA)
  • Manufacture Of Macromolecular Shaped Articles (AREA)

Abstract

A nanopatterned template for use in manufacturing nanoscale objects, which contains a nanoporous thin film with a periodically ordered porous geomorphology which is made from a process comprising the steps of: (a) using a block copolymerization process to prepare a block copolymer comprising first and second polymer blocks, the first and second polymer blocks being incompatible with each other; (b) forming a thin film under conditions such that the first polymer blocks form into a periodically ordered topology; and (c) selectively degrading the first polymer blocks to cause the thin film to become a nanoporous material with a periodically ordered porous geomorphology.
TW93121267A 2004-05-18 2004-07-16 Nanopatterned templates from oriented degradable diblock copolymer thin films TWI256110B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US10/850,169 US7632544B2 (en) 2003-05-20 2004-05-18 Nanopatterned templates from oriented degradable diblock copolymer thin films

Publications (1)

Publication Number Publication Date
TWI256110B true TWI256110B (en) 2006-06-01

Family

ID=37614077

Family Applications (1)

Application Number Title Priority Date Filing Date
TW93121267A TWI256110B (en) 2004-05-18 2004-07-16 Nanopatterned templates from oriented degradable diblock copolymer thin films

Country Status (1)

Country Link
TW (1) TWI256110B (en)

Cited By (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8557128B2 (en) 2007-03-22 2013-10-15 Micron Technology, Inc. Sub-10 nm line features via rapid graphoepitaxial self-assembly of amphiphilic monolayers
US8785559B2 (en) 2007-06-19 2014-07-22 Micron Technology, Inc. Crosslinkable graft polymer non-preferentially wetted by polystyrene and polyethylene oxide
US8993088B2 (en) 2008-05-02 2015-03-31 Micron Technology, Inc. Polymeric materials in self-assembled arrays and semiconductor structures comprising polymeric materials
US9177795B2 (en) 2013-09-27 2015-11-03 Micron Technology, Inc. Methods of forming nanostructures including metal oxides
US9315609B2 (en) 2008-03-21 2016-04-19 Micron Technology, Inc. Thermal anneal of block copolymer films with top interface constrained to wet both blocks with equal preference
US9431605B2 (en) 2011-11-02 2016-08-30 Micron Technology, Inc. Methods of forming semiconductor device structures
US9682857B2 (en) 2008-03-21 2017-06-20 Micron Technology, Inc. Methods of improving long range order in self-assembly of block copolymer films with ionic liquids and materials produced therefrom
US9768021B2 (en) 2007-04-18 2017-09-19 Micron Technology, Inc. Methods of forming semiconductor device structures including metal oxide structures
US10005308B2 (en) 2008-02-05 2018-06-26 Micron Technology, Inc. Stamps and methods of forming a pattern on a substrate

Cited By (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8557128B2 (en) 2007-03-22 2013-10-15 Micron Technology, Inc. Sub-10 nm line features via rapid graphoepitaxial self-assembly of amphiphilic monolayers
US9768021B2 (en) 2007-04-18 2017-09-19 Micron Technology, Inc. Methods of forming semiconductor device structures including metal oxide structures
US8785559B2 (en) 2007-06-19 2014-07-22 Micron Technology, Inc. Crosslinkable graft polymer non-preferentially wetted by polystyrene and polyethylene oxide
US11560009B2 (en) 2008-02-05 2023-01-24 Micron Technology, Inc. Stamps including a self-assembled block copolymer material, and related methods
US10828924B2 (en) 2008-02-05 2020-11-10 Micron Technology, Inc. Methods of forming a self-assembled block copolymer material
US10005308B2 (en) 2008-02-05 2018-06-26 Micron Technology, Inc. Stamps and methods of forming a pattern on a substrate
US9315609B2 (en) 2008-03-21 2016-04-19 Micron Technology, Inc. Thermal anneal of block copolymer films with top interface constrained to wet both blocks with equal preference
US9682857B2 (en) 2008-03-21 2017-06-20 Micron Technology, Inc. Methods of improving long range order in self-assembly of block copolymer films with ionic liquids and materials produced therefrom
US10153200B2 (en) 2008-03-21 2018-12-11 Micron Technology, Inc. Methods of forming a nanostructured polymer material including block copolymer materials
US11282741B2 (en) 2008-03-21 2022-03-22 Micron Technology, Inc. Methods of forming a semiconductor device using block copolymer materials
US8993088B2 (en) 2008-05-02 2015-03-31 Micron Technology, Inc. Polymeric materials in self-assembled arrays and semiconductor structures comprising polymeric materials
US9431605B2 (en) 2011-11-02 2016-08-30 Micron Technology, Inc. Methods of forming semiconductor device structures
US10049874B2 (en) 2013-09-27 2018-08-14 Micron Technology, Inc. Self-assembled nanostructures including metal oxides and semiconductor structures comprised thereof
US9177795B2 (en) 2013-09-27 2015-11-03 Micron Technology, Inc. Methods of forming nanostructures including metal oxides
US11532477B2 (en) 2013-09-27 2022-12-20 Micron Technology, Inc. Self-assembled nanostructures including metal oxides and semiconductor structures comprised thereof
US12400856B2 (en) 2013-09-27 2025-08-26 Micron Technology, Inc. Methods of forming nanostructures including metal oxides using block copolymer materials

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