1250588 五、發明說明（1) 【發明所屬之技術領域】 本發明係關於一種監控化學氣相沉積前腔體潔淨度的 方法，特別是關於使用一種因腔體潔淨度而具有不同消光 係數值的材質來形成一監控層，來進行腔體潔淨度的監控 方法。 【先前技術】 現今半導體製程内常使用化學氣相沉積來在晶圓上形 成純度相當高之無摻雜多晶矽或其他金屬材質，但這些材 料不僅會成形於晶圓上，但也會附著在反應室内的牆壁上 ，如對沉積多晶矽製程而言，當内牆上的矽累積至相當數 量，就會在反應室内形成微塵粒子（Part i cl e)，影響晶圓 的良率。因此每台機台在處理過特定數量的晶圓後，就需 進行一清洗製程，來去除腔體（chamber)壁上的石夕化物質 〇 但是隨著半導體工業的鐵則-摩爾定律的預測，半導 體晶片上所能容納的電晶體數量是以每1. 5至2年為一週期 ，逐期倍增。相較於舊的技術，單位面積内只能容納一千 個電晶體的晶片，在新的技術裡卻能擠進二千個。所以同 樣製作一片含一千個電晶體的晶片，尺寸將是過去的一半 ，因此製程中所產生的微塵粒（Part icle)對元件所造成的 失效日趨嚴重，所以對清洗製程結果的監控更顯重要，藉 以避免製程時因清洗製程不足，而導致元件失效。 所以，本發明針對上述之問題提出一種監控化學氣相 沉積前腔體潔淨度的方法，來解決上述清洗製程不易監控1250588 V. INSTRUCTION DESCRIPTION (1) Technical Field of the Invention The present invention relates to a method for monitoring the cleanliness of a chamber prior to chemical vapor deposition, and more particularly to the use of a different extinction coefficient value due to cavity cleanliness. The material is used to form a monitoring layer for monitoring the cleanliness of the cavity. [Prior Art] Chemical vapor deposition is often used in semiconductor processes today to form undoped polysilicon or other metal materials of relatively high purity on a wafer, but these materials are not only formed on the wafer but also attached to the reaction. On indoor walls, such as the deposition of polysilicon, when the amount of germanium on the inner wall accumulates to a considerable amount, dust particles are formed in the reaction chamber, which affects the yield of the wafer. Therefore, after each machine has processed a certain number of wafers, a cleaning process is required to remove the stone material on the wall of the chamber, but with the prediction of the iron industry of the semiconductor industry - Moore's Law The number of transistors that can be accommodated on the semiconductor wafer is multiplied by one cycle every 1.5 to 2 years. Compared to the old technology, only one wafer of crystals per unit area can be accommodated, and in the new technology, it can be squeezed into two thousand. Therefore, a wafer containing one thousand crystals is also produced, and the size will be half of the past. Therefore, the damage caused by the particles generated in the process is becoming more and more serious, so the monitoring of the cleaning process results is more obvious. It is important to avoid component failure due to insufficient cleaning process during the process. Therefore, the present invention provides a method for monitoring the cleanliness of a chemical vapor deposition prior to the above problems, to solve the above-mentioned cleaning process which is difficult to monitor.
第5頁 1250588 五、發明說明（2) 的困擾，並進而降低元件因微塵粒而產生失效的危險。 【發明内容】 本發明之主要目的，在於提供一種監控化學氣相沉積 前腔體潔淨度的方法，其係能夠有效的監控潔淨製程後腔 體的潔淨度。 本發明之另一目的，在於提供一種監控化學氣相沉積 前腔體潔淨度的方法，其能夠簡便且快速的判斷腔體的潔 淨度。 本發明之再一目的，在於提供一種監控化學氣相沉積 前腔體潔淨度的方法，其能夠降低元件因微塵粒存在而導 致失效的機率。 為達上述之目的，本發明提供一種監控化學氣相沉積 前腔體潔淨度的方法，其包括有下列步驟對一腔體進行一 第一次清洗製程；提供一第一晶片，將第一晶片置入腔體 :於第一晶片上沉積一第一氮氧化矽層；對相同之腔體進 行一時間大於第一次清洗製程之第二次清洗製程；提供一 第二晶片，將第二晶片置入腔體；沉積一第二氮氧化矽層 於第二晶片上；以及量測第一、第二氮氧化矽層之消光係 數值，若第二氮氧化矽層之消光係數值低於第一氮氧化矽 層之消光係數值時，延長清洗製程時間，若該第二氮氧化 矽層之消光係數值與該第一氮氧化矽層之消光係數值相近 時，清洗製程時間已足夠，即可將該清洗製程時間輸入製 程參數設定值，以作為下次進行清洗製程的時間依據。 茲為使 貴審查委員對本發明之結構特徵及所達成之Page 5 1250588 V. The troubles of the invention (2), and in turn reduce the risk of component failure due to dust particles. SUMMARY OF THE INVENTION The main object of the present invention is to provide a method for monitoring the cleanliness of a chemical vapor deposition front chamber, which is capable of effectively monitoring the cleanliness of a cavity after a clean process. Another object of the present invention is to provide a method for monitoring the cleanliness of a chemical vapor deposition front chamber which can easily and quickly determine the cleanliness of the chamber. It is still another object of the present invention to provide a method of monitoring the cleanliness of a chemical vapor deposition front chamber which is capable of reducing the probability of failure of components due to the presence of fine dust particles. To achieve the above object, the present invention provides a method for monitoring the cleanliness of a chamber prior to chemical vapor deposition, comprising the steps of: performing a first cleaning process on a cavity; providing a first wafer, the first wafer Inserting a cavity: depositing a first layer of arsenic oxynitride on the first wafer; performing a second cleaning process for the same cavity for a time greater than the first cleaning process; providing a second wafer, the second wafer Inserting a cavity; depositing a second layer of bismuth oxynitride on the second wafer; and measuring an extinction coefficient value of the first and second yttria layers, if the extinction coefficient of the second ruthenium oxynitride layer is lower than When the extinction coefficient value of the arsenic oxynitride layer is increased, the cleaning process time is prolonged. If the extinction coefficient value of the second yttria layer is close to the extinction coefficient value of the first yttria layer, the cleaning process time is sufficient, that is, The cleaning process time can be input to the process parameter setting value as the time basis for the next cleaning process. For the purpose of making the structural features and achievements of the present invention
1250588 五、發明說明（3) 功效更有進一步之瞭解與認識，謹佐以較佳之實施例圖及 配合詳細之說明，說明如後： 【實施方式】 本發明為一種監控化學氣相沉積前腔體潔淨度的方法 ，其係可使用於半導體製程中化學氣相沉積製程前需要監 控腔體潔淨度的製程，來進行腔體潔淨度的檢測，於此係 以一電漿輔助二氧化矽沉積之製程站點來作為待測製程環 境來說明本發明，習知此領域的人士應有的認知是許多的 步驟可以改變，如沉積之材質種類、清洗腔體所使用的氣 體等，這些一般的替換無疑地亦不脫離本發明的精神及範 第一圖為本發明監控化學氣相沉積前腔體潔淨度的方 法之流程示意圖，如圖所示，首先如步驟S 1 0，當機台處 理過規定數量的晶片後，使用含氟的氣體，如三氟化氮， 對一腔體（chamber)進行一第一次清洗製程（clean recipe)，來去除腔體壁上的矽化物質，將一第一晶片由 一機械手臂置入該腔體内，於該第一晶片上沉積一第一氮 氧化矽層（S i 0N )如步驟S 1 2所示。 接續，如步驟S 1 4，對上述之腔體進行一第二次清洗 製程，其中第二次清洗製程的製程時間大於第一次清洗製 程，當清洗製程完成後，將一與第一晶片所經歷之製程狀 態相同的第二晶片置入腔體進行一與第一氮氧化矽層製程 相同之沉積製程，然後於第二晶片上形成一第二氮氧化矽 層，如步驟S 1 6所示。然後，如步驟S 1 8所示，量測第一、1250588 V. INSTRUCTIONS (3) Further understanding and understanding of the effects, please refer to the preferred embodiment and the detailed description, as follows: [Embodiment] The present invention is a monitoring chemical vapor deposition front cavity The method of cleansing the body, which can be used for the process of monitoring the cleanliness of the cavity before the chemical vapor deposition process in the semiconductor process, to detect the cleanliness of the cavity, and the plasma is used to assist the deposition of cerium oxide. The process site is used to describe the present invention as a process environment to be tested. It is known in the art that many steps can be changed, such as the type of material deposited, the gas used to clean the cavity, etc. The first embodiment of the present invention is a schematic diagram of a method for monitoring the cleanliness of a chemical vapor deposition front chamber according to the present invention. As shown in the figure, first, as step S 1 0, when the machine is processed After a specified number of wafers, a first clean process is applied to a chamber using a fluorine-containing gas, such as nitrogen trifluoride, to remove the chamber. Silicide wall material, the first wafer is formed of a mechanical arm into a cavity of the body, depositing a first silicon oxynitride layer (S i 0N) as shown in Step S 1 2 on the first wafer. Continuing, in step S14, performing a second cleaning process on the cavity, wherein the process time of the second cleaning process is greater than the first cleaning process, and when the cleaning process is completed, the first wafer is The second wafer having the same process state is placed in the cavity to perform a deposition process identical to that of the first ruthenium oxynitride layer process, and then a second ruthenium oxynitride layer is formed on the second wafer, as shown in step S16. . Then, as shown in step S18, measuring the first,
第7頁 1250588 五、發明說明（4) 第二氮氧化石夕層之消光係數值（extinction coefficient )° 最後，進行比對第一氮氧化矽層與第二氮氧化矽層之 消光係數值，如步驟S 2 0，當第二氮氧化矽層之消光係數 值與第一氮氧化層之消光係數值相近，如步驟S 2 2，就本 實施例而言，如第二圖所示，當兩者間的差距小於 0 . 0 0 5，，則如步驟S 2 4所示，表示該清洗時間已經足夠， 可將該清洗時間設入製程參數（recipe)的設定中，以作為 下次進行清洗製程時間設定的依據。 於步驟S22時，若第二氮氧化矽層之消光係數值小於 第一氮氧化層之消光係數值，就本實施例而言，如第二圖 所示，當兩者間的差距大於0 . 0 0 5，即如步驟S 2 6所示，延 長清洗製程的時間，並重複上述之步驟直到兩氮氧化矽層 的消光係數值差距小於0. 0 0 5，即達到足夠的清洗製程時 間，將該清洗時間設入製程參數設定中，作為下次進行清 洗製程時間設定的依據。 綜上所述，本發明係為一種監控化學氣相沉積前腔體 潔淨度的方法，其係利用一種會因為腔體内潔淨不同而導 致消光係數值不同的氮氧化層來進行腔體潔淨狀態的監控 ，對於習知對腔體清洗製程時間難以控制的問題提出一簡 單的方式來解決，使腔體潔淨度的控制更具效率與簡便。 惟以上所述者，僅為本發明一較佳實施例而已，並非 用來限定本發明實施之範圍，故舉凡依本發明申請專利範 圍所述之形狀、構造、特徵及精神所為之均等變化與修飾Page 7 1250588 V. DESCRIPTION OF THE INVENTION (4) The extinction coefficient of the second oxynitride layer. Finally, the extinction coefficient values of the first ruthenium oxynitride layer and the second ruthenium oxynitride layer are compared. In step S20, when the extinction coefficient value of the second bismuth oxynitride layer is similar to the extinction coefficient value of the first oxynitride layer, as in step S2 2, in the present embodiment, as shown in the second figure, If the difference between the two is less than 0. 0 0 5, then as shown in step S24, it indicates that the cleaning time is sufficient, and the cleaning time can be set into the process parameter (recipe) for the next time. The basis for cleaning the process time setting. In step S22, if the extinction coefficient value of the second bismuth oxynitride layer is smaller than the extinction coefficient value of the first oxynitride layer, in the present embodiment, as shown in the second figure, when the difference between the two is greater than zero. 0 0 5, that is, as shown in step S26, the time of the cleaning process is extended, and the above steps are repeated until the difference of the extinction coefficient values of the two layers of bismuth oxynitride is less than 0.05, that is, sufficient cleaning process time is reached. The cleaning time is set in the process parameter setting as the basis for the next cleaning process time setting. In summary, the present invention is a method for monitoring the cleanliness of a chamber prior to chemical vapor deposition, which utilizes a nitrogen oxide layer that causes different extinction coefficient values due to different cleanliness of the chamber to perform a clean state of the chamber. The monitoring provides a simple way to solve the problem that the cavity cleaning process time is difficult to control, so that the control of the cavity cleanliness is more efficient and simple. However, the above description is only a preferred embodiment of the present invention, and is not intended to limit the scope of the present invention, so that the shapes, structures, features, and spirits described in the claims of the present invention are equally changed. Modification
1250588 五、發明說明（5) ，均應包括於本發明之申請專利範圍内。 12505881250588 V. The invention description (5) should be included in the scope of the patent application of the present invention. 1250588
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