:247572 經濟部智慧財產局員工消費合作社印製 A7 五、發明說明（f ) 發明領域： 本發明係有_-觀子難之製程’包含單晶片與多 晶片封裝’特別是關於製作附有散熱片（―卿如）構成 之散iv型晶#封裝方法’且該散熱片構成亦同時具有支撐效 果者（stiffener)。 發明背景： ik著半導體卫業不斷的進步m贿電子封裝通常 設計為在實社儘可驗躲,KFaUspaee)。目此承載電 路之空間亦隨著技術進步已成為一重要資產，應儘量糊； 為達此目的，縮小化電路則不失為善用空間之一有效方法， ^可增加運概度，減少舰及其他聰現之優點。如此的 縮小，在許多電子產品的顧方轉相#令人滿意，如航空 為、汽車、行動電話、手提細或可攜型錄放影機等方面之 應用。然而，散熱問題亦隨著縮小化而顯現出來，尤其是元 件的增加所導致產生的熱量，亦隨著在單一半導體元件上增 加電晶體的數目而跟隨著升高。 9 半導體晶片封裝之-的形式，包含—或多個晶片連接至 一基板上，可為一陶瓷基板，該陶瓷基板係以陶瓷材料作為 絕緣層；或一塑膠基板，該塑膠基板係以塑膠基材作為絕緣 層。傳統上將此封裝基板稱為一晶片載體（chipcarrier)，通 常將其配置及連接於一印刷電路卡（printed circuit card)或 一印刷電路板（printed circuit board)，而晶片則可以多種方 式連接基板上。一般敢常見如打金線方式（wireb〇n(jing)， ‘紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公釐） ------— — · ^_wl^w----訂---------線--^-Ί — ^ <請先閱讀背面之注意事項再填寫本頁} 1247572 經濟部智慧財產局員工消費合作社印製 A7 —----------B7_ I WH ......^^-«ββββ1βΒββ|1ββ(1βΒβΒ>>ι|>|Βΐ||-ββι>ι 五、發明說明（）/ ) 其係藉由晶片元件處到基板連接點的極細微金線作電性連 接’另一種則是覆晶（flip chip)連結方式，其係以錫球（solder ball)作為晶片的實體接觸及電性連接。 各種不同方式已被開發用於在成本較陶瓷基板低的塑膠 基板上設置晶片。主要由於塑膠基板一直被認為在晶片的運 作上’比陶瓷基板具備較多關鍵優勢，包括高電流載量、於 短操作延遲時間（delaytime)之低介電常數以及低電感及電 容等。然而，塑膠基板的高溫穩定度則是仍然存在的問題， 並已對現行塑膠基板的發展引起很大的挑戰。其一的解決方 式則是應用一種開口向下（cavity down)晶片封裝的結構， 係包含一具有能承接晶片之開口（opening)之封裝基板，及 在晶片底部貼有一散熱金屬塊或散熱片之結構，且其開口端 係面對印刷電路卡或印刷電路板。 圖一所示係為習知典型塑膠基板開口向下晶片封裝方式 (cavity down plastic chip carrier)。封裝裝配構成 1〇〇包含一 塑膠佈線基板101，該塑膠佈線基板101設有一凹陷處（cavity) 102及一鍵結層（bonding layer) 104與基板101鍵結之散熱金 屬塊或散熱片103。一側壁之電導或/和熱導層1〇5則可作為連 接散熱片103與基板1〇1上的電路層，以增進熱電性能。晶片 106則位在凹陷處1〇2内，而貼覆在散熱片1〇3上。導電金線1〇7 則用於晶片106與基板1〇1之電性連接。在打金線步驟後，凹 陷處102則填以封膠1〇8 (encapsuiant)覆蓋保護導電金線1〇7 與晶片106，以避免環境腐蝕破壞。另外，位在基板最外層之 對外連接腳109，則作為基板與印刷電路板之電性連 I___ 3 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公釐） 丨|「丨丨！·丨·----訂---------線丨·丨丨丨·· (請先閱讀背面之注意事項再填寫本頁) 1247572 A7 五、發明說明（}) 接。所述之對外連接腳係可為導電針（pins)、錫球或錫柱， 係分別應用在塑膠針陣列（plastic pin gricj array, ppGA)、塑 膠球陣列（plastic ball grid array，PBGA)或塑膠圓柱陣列 (plastic column grid array，PCGA )之封裝方式。 美國專利U.S· PatentNo. 5,357,672揭露了 一種簡易的開 口向下晶片塑膠載體（cavity cl〇wn plastic chip carrjer)製程。 該方法係使用預浸材（prepreg)作為鍵結層，亦即在圖一中 的鍵結層104或圖二中的鍵結層206。然而，根據實務經驗， 忒方法製造的晶片載體（chip carrier)在熱壓過程中，預浸 材經常有因固化收縮而造成翹曲的現象發生。 為克服塑膠基板開口向下晶片封裝裝配於製程卡，所發 生的翹曲或扭曲現象，有時可加入一堅固支撐物（stiffener) 或較多之銅層（COpperlayer)。圖二顯示一典型例子，其係另 一塑膠基板開口向下晶片封裝方式，一封裝裝配構成2〇〇，亦 可稱為超級球陣列封裝（SUper BGA)，其包含一電路板2〇1 以及一内銅層（internal copper layer) 202 ;該電路板201包含 有相對之苐一表面2〇la及第二表面201b，該内銅層202之第一 表面202a利用一黏著層203與電路板201之第二表面2〇ib相連 接。在所述電路板201與銅層202中間形成一開口，使一凹陷 處（cavity) 204穿越該電路板201與銅層202。一散熱片205 利用一黏著層206附著在銅層202之第二面202b，以增加散熱 效果。一晶片207置放於凹陷處204，並藉助一導熱黏著層208 附在該散熱片205上。而導電金線209則作為晶片207與電路板 201之連線。在打金線步驟後，凹陷處2〇4則填以封膠21〇 1247572 A7 B7 五、發明說明（ψ ) (encapsulant)覆蓋保護導電金線2〇9與晶片207，以避免環 i兄腐餘破壞。而錫球211設在電路板2〇1之第一表面2〇ia上的 適當位置，與印刷電路板212作電性連接。另外一常見結構， 則是額外加入的散熱裝置（heat sink)亦可直接貼在散熱片 205之第二表面2〇5b上，以達更佳的散熱效果。 美國專利U.S. PatentNo. 6,034,427亦揭露了一種具支撐 意 物之開口向下BGA製程，先藉助-預浸材（prepreg)將一堅 固支撐物（stiffener)黏貼在一電路板上，然後再以一黏著層 將散熱片附在該堅固支樓物上。該專利使用之散熱片係為銅 底材（copper base material)，亦即銅或銅合金等常見軟性材 枭（softmaterial)，而黏著層的固化收縮會使得在熱壓散熱片 與含支撐物之電路板過程中造成魅曲現象。 美國專利U.S. Patent Νο· 6,060,778亦揭露了一種簡易開 口向下BGAi_，其具有優良散熱效果、低重量、薄厚度 ，低製造成本等優點。該專利教導了使用第—鱗薄板先ς 者在電路板，然後再以-第二熱導薄板（亦即散埶片）盥含 有第-鮮薄板之電路板相連接。此方法圖示於該專利說明 文之圖七中’但並未被陳述於申請專利範圍之内容内。狹而 此專利亦會制_述顧專利us PatentNe 6⑽奶之 問題：亦即難以消弭製程中造成之翹曲現象。，， 為此’本發明係提供了一製造塑膠基板開口向下晶 =方式，其具有優良散熱效果、重量低、厚度薄、 與扭曲現“及鋪造成轉伽。依據 法，係先將兩個熱導薄板進行貼合形成-散熱片構 本紙張3適票準(cns)A4規 1247572 五、發明說明（ 經濟部智慧財產局員工消費合作社印製 A7 B7 該散熱片構成與-開口向下之電路板（或 明顯有別於美國專利US.P咖Να6卿 所提出之方法’依此兩篇專利所_，係皆以一 齡薄板先和-娜基迪行接合，再_已_有一熱導 薄板之電路板和另—熱導薄板進行接合。又另—明顯不同 處’在於本發明在兩熱導薄板間係使用預浸材作為鍵結層， 而基板與鮮薄板間剌非職材之料獅作為鍵結 層^行貼合’但相反的，美國專概S. Patent Να 6风427 所提出之方法’财兩熱導薄板間使用_浸材之黏著材料 作為鍵結層，*基板與熱料板間職贿浸材之作為鍵結 層進行貼合。依據本發明所提出之方法，將兩個或以上熱^ 薄板以預浸材作為鍵結層進行貼合，所形成之散熱片構成， 因具有高機械強度特性，因此在與電路板貼合時，作為支撐 物，可用以防止翹曲或扭曲現象之發生。 發明概述： 本發明之主要目的係提供一種具支撐效果之堅 固散熱片構成應用於晶片封裝基板製程，其具有優良散熱效 果、重量低、厚度薄及無翹曲與扭曲現象等優點。 本發明之另一目的係為提供一可鍵結第一熱導薄 板（thermally conductive sheet)與第二熱導薄板之第一鍵結 薄片（bonding sheet)，以形成一堅固的散熱片結構， 而該第一鍵結薄片可為一纖維強化樹脂，該第二熱導薄板係 具有一可容置電子晶片之開口。 表紙張尺度適用中國國家標準（CNs)A4規格（210 X 297公釐）: 247572 Ministry of Economic Affairs, Intellectual Property Bureau, Staff Consumer Cooperative, Printed A7 V. Invention Description (f) Field of the Invention: The present invention has a process of "a single wafer and a multi-chip package", especially regarding the fabrication with heat dissipation The film ("Qingrui" constitutes the iv-type crystal #packaging method' and the heat sink composition also has a support effect (stiffener). Background of the invention: ik is constantly making progress in the semiconductor industry. The bribe electronic package is usually designed to be hidden in the real world, KFaUspaee). The space for carrying the circuit has become an important asset with the advancement of technology. It should be as good as possible. To achieve this goal, reducing the circuit is an effective way to make good use of space. ^ Can increase the degree of operation, reduce ships and other The advantages of Cong. Such a reduction has been made in many electronic products, such as aerospace, automotive, mobile phones, portable thin or portable video recorders. However, the heat dissipation problem also manifests itself with the reduction, especially the heat generated by the increase in the number of elements, which is followed by an increase in the number of transistors on a single semiconductor element. 9 in the form of a semiconductor chip package, comprising - or a plurality of wafers connected to a substrate, which may be a ceramic substrate, the ceramic substrate being made of a ceramic material; or a plastic substrate, the plastic substrate being a plastic substrate The material is used as an insulating layer. The package substrate is conventionally referred to as a chip carrier, which is usually configured and connected to a printed circuit card or a printed circuit board, and the wafer can be connected to the substrate in various ways. on. Generally, it is common to use gold wire (wireb〇n (jing), 'paper scale applies Chinese National Standard (CNS) A4 specification (210 X 297 mm) ------------- ^_wl^w-- --Book --------- Line --^-Ί — ^ <Please read the notes on the back and fill out this page} 1247572 Ministry of Economic Affairs Intellectual Property Bureau employee consumption cooperative printed A7 —--- -------B7_ I WH ......^^-«ββββ1βΒββ|1ββ(1βΒβΒ>>ι|>|Βΐ||-ββι>ι V, invention description ()/ ) The electrical connection is made by a very fine gold wire at the wafer component to the substrate connection point. The other is a flip chip connection method in which a solder ball is used as a physical contact and an electrical connection of the wafer. Various methods have been developed for placing wafers on plastic substrates that are less expensive than ceramic substrates. Mainly because plastic substrates have always been considered to have more critical advantages than ceramic substrates in the operation of wafers, including high current loads, Low dielectric constant for low operation delay time and low inductance and capacitance, etc. However, the high temperature stability of the plastic substrate is However, the existing problems have caused great challenges to the development of current plastic substrates. One solution is to apply a cavity down package structure, including an opening capable of receiving a wafer ( The package substrate of the opening, and a structure of a heat dissipating metal block or a heat sink attached to the bottom of the wafer, and the open end thereof faces the printed circuit card or the printed circuit board. Figure 1 shows a typical plastic substrate opening downward. The package assembly assembly 1 includes a plastic wiring substrate 101 having a cavity 102 and a bonding layer 104 and a substrate 101. Bonded heat-dissipating metal block or heat sink 103. A side wall conductance or/and heat conducting layer 1〇5 can be used as a circuit layer connecting the heat sink 103 and the substrate 1〇1 to improve the thermoelectric performance. In the recess 1 〇 2, and attached to the heat sink 1 〇 3. The conductive gold wire 1 〇 7 is used for the electrical connection of the wafer 106 and the substrate 1 。 1. After the gold wire step, the recess 102 then The conductive gold wire 1〇7 and the wafer 106 are covered with a sealant 1〇8 (encapsuiant) to avoid environmental corrosion damage. In addition, the external connection leg 109 located at the outermost layer of the substrate serves as the electrical property of the substrate and the printed circuit board. Even I___ 3 This paper scale applies to China National Standard (CNS) A4 specification (210 X 297 mm) 丨|"丨丨! ·丨·----订---------丨 丨丨丨·丨丨丨·· (Please read the notes on the back and fill out this page) 1247572 A7 V. Inventions (}) The external connecting leg can be a conductive pin, a solder ball or a tin column, and is applied to a plastic pin gricj array (ppGA), a plastic ball grid array (PBGA) or a plastic. The packaging of a cylindrical column array (PCGA). U.S. Patent No. 5,357,672 discloses a simple cavity cl〇wn plastic chip carrjer process. This method uses a prepreg as the bonding layer, i.e., the bonding layer 104 in Fig. 1 or the bonding layer 206 in Fig. 2. However, according to practical experience, during the hot pressing process of the chip carrier manufactured by the tantalum method, the prepreg often has warpage due to curing shrinkage. In order to overcome the warpage or distortion caused by the plastic substrate opening down to the wafer package, it is sometimes possible to add a solid support or a more copper layer. FIG. 2 shows a typical example of another plastic substrate opening down chip package, a package assembly structure, also referred to as a super ball array package (SUper BGA), which includes a circuit board 2〇1 and An inner copper layer 202; the circuit board 201 includes an opposite surface 2〇1a and a second surface 201b. The first surface 202a of the inner copper layer 202 utilizes an adhesive layer 203 and the circuit board 201. The second surface 2〇ib is connected. An opening is formed between the circuit board 201 and the copper layer 202 such that a cavity 204 traverses the circuit board 201 and the copper layer 202. A heat sink 205 is attached to the second side 202b of the copper layer 202 by an adhesive layer 206 to increase the heat dissipation effect. A wafer 207 is placed in the recess 204 and attached to the heat sink 205 by means of a thermally conductive adhesive layer 208. The conductive gold wire 209 serves as a connection between the wafer 207 and the circuit board 201. After the gold wire step, the depression 2〇4 is filled with the sealant 21〇1247572 A7 B7 5. The invention (ψ) (encapsulant) covers the protective conductive gold wire 2〇9 and the wafer 207 to avoid the ring i brother I destroyed. The solder ball 211 is disposed at a suitable position on the first surface 2A of the circuit board 2〇1, and is electrically connected to the printed circuit board 212. Another common structure is that an additional heat sink can be directly attached to the second surface 2〇5b of the heat sink 205 for better heat dissipation. U.S. Patent No. 6,034,427 also discloses an open-bottom BGA process with support, by first attaching a strong support to a circuit board by means of a prepreg, and then bonding it to a circuit board. The layer attaches a heat sink to the solid support. The heat sink used in this patent is a copper base material, that is, a soft material such as copper or copper alloy, and the curing shrinkage of the adhesive layer causes the heat sink and the support to be supported. The phenomenon of charm is caused during the circuit board process. U.S. Patent No. 6,060,778 also discloses a simple opening down BGAi_ which has the advantages of excellent heat dissipation, low weight, thin thickness, low manufacturing cost and the like. This patent teaches the use of a first scale slab to be attached to a circuit board and then to a second thermal conductive sheet (i.e., a bulk sheet) to a circuit board containing a first fresh sheet. This method is illustrated in Figure VII of the patent specification, but is not described in the scope of the patent application. Narrow and this patent will also be made _ the patent us PatentNe 6 (10) milk problem: that is, it is difficult to eliminate the warpage caused by the process. Therefore, the present invention provides a method for manufacturing a plastic substrate opening downward crystal = mode, which has excellent heat dissipation effect, low weight, thin thickness, and distortion caused by "transfer and gamma. According to the law, the first two A heat guide sheet is laminated to form a heat sink sheet paper 3 suitable for the ticket (cns) A4 regulation 1247572 V. Invention Description (Ministry of Economic Affairs Intellectual Property Bureau employee consumption cooperative printed A7 B7 The heat sink is composed and - the opening is downward The circuit board (or obviously different from the method proposed by US Patent P. 6 6 6 ' 依 依 依 依 依 依 依 依 依 依 依 依 依 依 依 依 依 依 依 依 依 依 依 依 依 依 依 依 依 依 依 依 依 依 依 依 依 依 依 依 依The circuit board of the heat conductive sheet is joined to the other heat conductive sheet. Another difference is that the present invention uses a prepreg as a bonding layer between the two heat conductive sheets, and the substrate and the fresh sheet are inactive. The lion of the material is used as the bonding layer. However, the method proposed by the US S. Patent Να 6 wind 427 is used as the bonding layer between the two heat-conductive sheets. *The bond between the substrate and the hot plate is used as the bonding layer According to the method of the present invention, two or more hot sheets are laminated with a prepreg as a bonding layer, and the formed fins are formed, because of high mechanical strength characteristics, and therefore in the circuit When the board is pasted, it can be used as a support to prevent the occurrence of warping or twisting. SUMMARY OF THE INVENTION The main object of the present invention is to provide a sturdy heat sink having a supporting effect, which is applied to a wafer package substrate process, which has excellent heat dissipation. The invention has the advantages of low effect, low weight, thin thickness and no warping and twisting phenomenon. Another object of the present invention is to provide a first bond capable of bonding a first thermal conductive sheet and a second heat conductive sheet. A bonding sheet is formed to form a solid heat sink structure, and the first bonding sheet may be a fiber reinforced resin, and the second heat conductive sheet has an opening for accommodating the electronic wafer. Applicable to China National Standard (CNs) A4 specification (210 X 297 mm)
丨丨丨1丨丨1·#丨訂---------線丨--▲ (請先閱讀背面之注意事項再填寫本頁) 1247572 經濟部智慧財產局員工消費合作社印製 A7 —— —__B7_______ 五、發明說明（匕） 本發明的再一目的係為提供一可鍵結一塑膠電路 板:、堅固散熱片結構之第二鍵結薄片（bondingsheet)， 該，膠電路板係具有一可容置晶片之開口。所述之鍵結薄 片可為單層黏著層或多層黏著層疊合所組成，所述之黏著層 係可為一黏著材質、短薄片填充（flake_flUed)之黏著材、纖 維填充（fiber-filled)之黏著材或粒狀物填充（particle_fllled) 之黏著材所組成，且非為預浸材。 ^ 本發明之再一目的係提供一種利用第二熱導 薄板強化散熱片結構之機械性質的方法，該第二熱 V薄板可利用鍵結薄片（b〇nding sheet)貼合於第 一熱導薄板上，而該第一熱導薄板可直接貼附有一 晶片或其他被動元件。 為達上述之目的，本發明係提供一種具支撐效果之堅固 散熱片構成應用於晶片封裝基板製程，其係為一具有優良散 熱效果、低重量、薄厚度及可消弭翹曲（waipage)與扭曲 (twist)現象等優點之製程。所述具支撐效果之堅固散熱片 結構之形成係以一第一鍵結薄片（b〇nciing sheet)將第一熱 導薄板（或稱散熱片）及第二熱導薄板結合；該第一鍵結 薄片係為一纖維強化樹脂。另以一第二鍵結薄片結合電路板 與散熱片結構，該第二鍵結薄片係為單層黏著層或多層黏著 層之疊合（a stack of several adhesive layers )所組成。該黏著 層係可為一黏著材、薄片填充（flake-fiiied)之黏著材 '纖維 填充（flber_filled)之黏著材或粒狀物填充（particle-fined) 之黏著材所組成。所述電路板上並形成有一開口可供晶片設 7 本紙張尺/艾過用中國國家標準（CNS)A4規格（210 X 297公釐） 丨丨Γ!·丨"Φ----訂---------線-#! (請先閱讀背面之注意事項再填寫本頁) 1247572 A7 B7 五、發明說明（ 置 圖式之簡單說明： 圖一係習知技術中開口向下晶片封裝方式之示意圖。 式之另一習知技财具支撐物之開口向下晶片封裝方 口向片結構之開 圖四係本發明另一實施例中散敎- Γ為本發明另—實施财形成; 出=一_edgeconn一 圖，、係本發明另一實施例中形成具有多個熱 熱片結構之開π向下電路板結構之示意圖。/反之月 圖七係本發明另一實施例中形成可供 散熱片結構之開π向下電路板之示意圖。日日片封裝之具有 線 圖號說明： 經 濟 部 智 慧 財 產 局 員 工 消 費 合 作 社 印 製 1，30, 32, 101，201-基板 2, 11，27, 33, 34_ 開口 3- 階層 4- 基板第一表面 5- 基板第二表面 6- 第一熱導薄板 7- 苐一熱導薄板第一表面 本紙張尺度適財關家標準（CNS)A4規格（210 X 297¾^ 1247572 經濟部智慧財產局員工消費合作社印製 A7 _B7 五、發明說明（飞） 8- 第一熱導薄板第二表面 9- 黏著增強劑 10- 第二熱導薄板 12- 第二熱導薄板第一表面 13- 第二熱導薄板第二表面 14, 15,29-黏著增強劑 16, 19, 31，36_鍵結薄片 17, 28, 35-散熱片結構 17a-保護層 18, 18a，105-電導或/和熱導層 20-具尖銳端之連結部 22- 苐一熱導薄板 23- 第二熱導薄板 25- 第一鍵結薄片 26- 熱導薄板疊合物 100,200-封裝裝配構成 101，201-基板 102.204- 凹陷處 103.205- 散熱片 104.206- 鍵結層 106.207- 晶片 107.209- 金線 108.210- 封膠 109.211- 連接腳 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公釐） 丨丨丨丨_·丨#----訂---------線1·— (請先閱讀背面之注意事項再填寫本頁) 1247572 A7 五、發明說明（，） 110, 212-電路板 202-銅層 202a-銅層第一表面 202b-銅層第二表面 203, 206, 208-黏著層 205a-散熱片第一表面 205b·散熱片第二表面 詳細說明： 、為了使貴審查委員對本發明之目的、特徵及功效，有更 進-步的瞭解與認同’兹配合圖式詳加說明如后。當然，本 、限於本說明書中解内 容。說明書所揭露者相當完整’亦可完全表達本發明所要揭 露的精神。 本發明係有關於-種具支撐效果之堅固散熱片構成應用 於晶片封裝基板製程，特別是有關於在製程上消馳曲及扭 曲現象之散熱型積體電路開口向下晶片封裝製程。同時，此 封裝亦可保有良好散熱的效果。然而，本發明之圖式僅為簡 單說明，並非依實際尺度描繪，亦即未反映出晶片載體結構 中，各層次之實際尺寸與特色，先予敘明。 請參閱圖三，係為本發明第一實施例。首先提供一晶片 塑膠載體基板1，該基板1係包含一開口2與若干階層3。該基 板1可包含有如習知以有機絕緣層隔開之佈線電路層、通孔 (through_holes)' 導通孔（concjuctivethroUgh-h〇les)或介層 本紙張尺度適用中_冢標半（CNS)A4規格121Q χ挪公愛·· 丨丨7丨丨T_#—-4P----訂------ (請先閱讀背面之注意事項再填寫本頁}丨丨丨1丨丨1·#丨定---------线丨--▲ (Please read the notes on the back and fill out this page) 1247572 Ministry of Economic Affairs Intellectual Property Bureau employee consumption cooperative printed A7 ————__B7_______ V. Description of the Invention (匕) A further object of the present invention is to provide a bondable plastic circuit board: a second bonding sheet of a sturdy heat sink structure, the plastic circuit board There is an opening that can accommodate the wafer. The bonding sheet may be a single-layer adhesive layer or a multi-layer adhesive laminate, and the adhesive layer may be an adhesive material, a short sheet filling (flake_flUed) adhesive material, and a fiber-filled layer. Adhesive material made of adhesive or granular material (particle_fllled), and not prepreg. A further object of the present invention is to provide a method of reinforcing the mechanical properties of a heat sink structure using a second heat conductive sheet which can be bonded to the first heat guide using a bonding sheet On the sheet, the first heat conductive sheet can be directly attached with a wafer or other passive component. In order to achieve the above object, the present invention provides a sturdy heat sink having a supporting effect to be applied to a wafer package substrate process, which has an excellent heat dissipation effect, low weight, thin thickness, and waipage and distortion. (twist) phenomenon and other advantages of the process. The sturdy heat sink structure having a supporting effect is formed by combining a first heat conductive sheet (or heat sink) and a second heat conductive sheet with a first bonding sheet; the first key The flaky film is a fiber reinforced resin. In addition, a second bonding sheet is combined with the circuit board and the heat sink structure, and the second bonding sheet is composed of a single layer of adhesive layer or a stack of several adhesive layers. The adhesive layer may be an adhesive, flake-fiiied adhesive material, a flesh-filled adhesive or a particle-fined adhesive. An opening is formed on the circuit board for the wafer to be set. 7 The paper size/Ai is used in the Chinese National Standard (CNS) A4 specification (210 X 297 mm) 丨丨Γ!·丨"Φ---- ---------Line-#! (Please read the notes on the back and fill out this page) 1247572 A7 B7 V. Description of the invention (Simplified description of the drawing: Figure 1 is the opening direction of the prior art) A schematic diagram of a lower chip package method. Another open type of the art tool support opening to the lower chip package square port to the sheet structure. FIG. 4 is another embodiment of the present invention. A method of forming a _edgeconn, which is a schematic diagram of forming an open π-down circuit board structure having a plurality of hot-hot sheet structures in another embodiment of the present invention. In the embodiment, a schematic diagram of a π-down circuit board for forming a heat sink structure is formed. The line drawing of the Japanese chip package has a description of the line: Ministry of Economic Affairs, Intellectual Property Bureau, Staff Consumer Cooperative, 1,30, 32, 101, 201- Substrate 2, 11, 27, 33, 34_ Opening 3 - Level 4 - First surface of the substrate 5 - Substrate Surface 6 - First Thermal Conductive Sheet 7 - First Thermal Conductive Sheet First Surface This Paper Scale is suitable for National Standards (CNS) A4 Specification (210 X 2973⁄4^ 1247572 Ministry of Economic Affairs Intellectual Property Bureau Staff Consumer Cooperative Printed A7 _B7 Five DESCRIPTION OF THE INVENTION (Flying) 8- First Thermal Conductive Sheet Second Surface 9 - Adhesive Enhancer 10 - Second Thermal Conductive Sheet 12 - Second Thermal Conducting Sheet First Surface 13 - Second Thermal Conducting Sheet Second Surface 14, 15,29-adhesive enhancer 16, 19, 31, 36_bonded sheet 17, 28, 35-heat sink structure 17a - protective layer 18, 18a, 105 - conductance or / and thermal conductivity layer 20 - with sharp end Joint portion 22 - first heat guide sheet 23 - second heat guide sheet 25 - first bond sheet 26 - heat conductive sheet laminate 100, 200 - package assembly 101, 201 - substrate 102.204 - recess 103.205 - heat sink 104.206 - Bonding layer 106.207 - Wafer 107.209 - Gold line 108.210 - Sealing material 109.211 - Connection script Paper size Applicable to China National Standard (CNS) A4 specification (210 X 297 mm) 丨丨丨丨_·丨#---- --------- Line 1·— (Please read the note on the back and fill out this page) 1247572 A7 V. Invention Description (, 110, 212-circuit board 202-copper layer 202a-copper layer first surface 202b-copper layer second surface 203, 206, 208-adhesive layer 205a-heat sink first surface 205b·heat sink second surface detailed description: In order to enable your review board to have a more in-depth understanding and recognition of the purpose, characteristics and efficacy of the present invention, the detailed description of the drawing is as follows. Of course, this is limited to the contents of this manual. The disclosure of the specification is fairly complete and can fully convey the spirit of the invention as disclosed. SUMMARY OF THE INVENTION The present invention relates to a sturdy heat sink having a supporting effect for use in a wafer package substrate process, and more particularly to a heat sink type integrated circuit opening down wafer package process for a process of squeezing and twisting in a process. At the same time, this package can also maintain good heat dissipation. However, the drawings of the present invention are merely illustrative and are not depicted on actual scales, i.e., do not reflect the actual dimensions and features of the various layers of the wafer carrier structure, which are described first. Please refer to FIG. 3, which is a first embodiment of the present invention. First, a wafer plastic carrier substrate 1 is provided, which includes an opening 2 and a plurality of levels 3. The substrate 1 may include a wiring circuit layer, a through hole, or a via hole, which is conventionally separated by an organic insulating layer, or a medium-sized paper size (CNS) A4. Specifications 121Q χ公公爱·· 丨丨7丨丨T_#—-4P----订------ (Please read the notes on the back and fill out this page)
I I I 1247572 經濟部智慧財產局員工消費合作社印製 A7 五、發明說明（1° ) 孔（via)等；階層3表面的電極（或稱鍵結指，b〇ndingfmger) 與保護層；階層第一表面4上的電極（或稱銲墊，ianding pad)、屏障（dam)與保護覆層；第二表面5上的銲墊與保護 覆層荨。一苐一熱導薄板6 (或 稱政熱片），该苐一熱導薄板6可為銅或銅合金薄板，石墨纖 維填充之銅或銅合金、石墨纖維填充之鋁或鋁合金、碳化矽 顆粒填充之之銅或銅合金、碳化矽顆粒填充之鋁或鋁合金 等，並可在其第一表面7與第二表面8都進行化學或物理粗化 (roughen)步驟。該第一表面7係形成有一黏著增強劑9 (adhesion promoter)，較佳為一氧化層或耦合劑（c〇upUng agent)，以增加其黏著性。該耦合劑可包含矽銶耦合劑 (silane)、鈦耦合劑、鈷耦合劑或鋁耦合劑等。一第二熱導 薄板10(或稱内層熱導薄板），其設有一開口 11穿透其中，同 樣地，該第二熱導薄板10可為銅或銅合金薄板，石墨纖維填 充之銅或銅合金、石墨纖維填充之鋁或鋁合金、碳化矽顆粒 填充之之銅或銅合金、碳化矽顆粒填充之鋁或鋁合金等，並 可在其第一表面12與第二表面13都進行化學或物理粗化步 驟，且該第一表面12與第二表面13係都形成有黏著增強劑14 及15。然而，所述之黏著增強劑並不只限定為本發明所述之 氧化層或耦合劑。該第一熱導薄板6之第一表面7與第二熱導 薄板10之第二表面13係藉助一鍵結薄片16相貼合。所述之鍵 、、、口薄片16較佳為一纖維強化樹脂，係如預浸材（坪印[呢）等。 藉由熱壓步驟，一包含第-熱導薄板6與第二熱導薄板10之 堅口的月欠熱片結構 17 ( stiff heat spreader element) 11 χ 297"^釐）III 1247572 Ministry of Economic Affairs Intellectual Property Bureau employee consumption cooperative printed A7 V. Invention description (1°) hole (via), etc.; level 3 surface electrode (or bond finger, b〇ndingfmger) and protective layer; An electrode (or idding pad), a dam and a protective coating on the surface 4; a pad and a protective coating on the second surface 5. A thermal guide sheet 6 (or a hot sheet), which may be a copper or copper alloy sheet, a graphite fiber filled copper or copper alloy, a graphite fiber filled aluminum or aluminum alloy, or tantalum carbide The copper or copper alloy filled with the particles, the aluminum or aluminum alloy filled with the ruthenium carbide particles, and the like may be subjected to a chemical or physical roughening step on both the first surface 7 and the second surface 8. The first surface 7 is formed with an adhesion promoter 9, preferably an oxide layer or a coupling agent (c〇upUng agent) to increase its adhesion. The coupling agent may comprise a ruthenium silane, a titanium couplant, a cobalt couplant or an aluminum couplant. a second heat conductive sheet 10 (or inner layer heat conductive sheet) is provided with an opening 11 penetrating therein. Similarly, the second heat conductive sheet 10 may be a copper or copper alloy sheet, graphite fiber filled copper or copper. An alloy, graphite fiber-filled aluminum or aluminum alloy, copper or copper alloy filled with tantalum carbide particles, aluminum or aluminum alloy filled with tantalum carbide particles, and the like, and may be chemically or both on the first surface 12 and the second surface 13 The physical roughening step, and the first surface 12 and the second surface 13 are both formed with adhesion enhancers 14 and 15. However, the adhesion enhancer is not limited to the oxide layer or the coupling agent of the present invention. The first surface 7 of the first thermal conductive sheet 6 and the second surface 13 of the second thermal conductive sheet 10 are bonded by means of a bonding sheet 16. The key sheet and the sheet 16 are preferably a fiber-reinforced resin such as a prepreg (Pingyin). By a hot pressing step, a stiff heat spreader element 17 (χ 297 297 " ^ PCT) comprising the first heat guide sheet 6 and the second heat conductive sheet 10
▼.丨----訂---------線—#·-®-·. (請先閱讀背面之注意事項再填寫本頁) 1247572 A7 五、發明說明（（丨） 於焉完成。在鍵結薄片16 (預浸材）熱壓硬化之後， 該散熱片結構17即成為一堅固的三明治結構。一埶 導或電導層18則可作為第一熱導薄板6與第二熱導薄板】、〇 的熱性連結，以更增進散熱效果。此外，第一熱導薄板 一熱導薄板10可配置為相等厚度，此對稱性三明治結 得最佳防止赵曲及扭曲效果。 另一實施方式如圖四所示，其中一熱導或電 層18a，可為-薄銅或銅合金層等，可形成於散敎 片結構17之下側表面。當然，在形成熱導或電導層 18或18a之前，可先對散熱片結構17之下側表面^ 行酸清洗或電漿清洗（plasmadeanmg)等步驟。 在第-熱導薄板6之第二表面8可形成有保護層（圖中未示 如鎳、金或導熱顆粒填充之環氧樹脂（印卿輸）' 讚石 或類鑽石碳膜等，且在形雜護層之前，該第_熱導薄板6 之第二表面8可先進行物理或化學粗化。一第二鍵結薄片^ 係設在第二熱導薄板1〇之第一表面12與基板1的第二表面^之 間。雜合步驟，在所述第二鍵結薄片19以加熱或輻射等方 式硬化之後，散熱片結構π便與基紀的第二表面$鍵锋。在 經過側壁電鑛、晶片設置、打金線、填充封膠及外層糊連 腳a又置等-般習知製程之後，如圖二所示之開口向下晶片封 裝裝配構成200便能以此方式形成。 依據本發明所提出之方法，如圖 已將第-熱導薄板6與第二熱導薄板1〇進行熱傳連戈= 步提升散熱效果；但美國專利u s PatentN〇 6卿27及仍 I_____12 本紙張尺i適用屮國凼豕標準（asJS)A4規袼（21_0 x 297公釐 1247572 A7 B7 五、發明說明（丨〆）▼.丨----订---------Line—#·-®-·. (Please read the notes on the back and fill out this page) 1247572 A7 V. Invention Description ((丨) After the thermosetting hardening of the bonding sheet 16 (prepreg), the fin structure 17 becomes a strong sandwich structure. A conductive or electrically conductive layer 18 can be used as the first thermal conductive sheet 6 and the second The thermal conductive sheet and the thermal connection of the crucible are used to further enhance the heat dissipation effect. In addition, the first thermal conductive sheet and the thermal conductive sheet 10 can be configured to have the same thickness, and the symmetrical sandwich is optimally prevented from rubbing and twisting. An embodiment is shown in FIG. 4, wherein a thermal conductive or electrical layer 18a, which may be a thin copper or copper alloy layer, or the like, may be formed on the underside surface of the diffuser structure 17. Of course, in forming a thermal or electrical conductance Before the layer 18 or 18a, the lower surface of the heat sink structure 17 may be subjected to acid cleaning or plasma cleaning. The second surface 8 of the first heat guiding sheet 6 may be formed with a protective layer (Fig. The epoxy resin (india), such as nickel, gold or thermal conductive particles, is not shown. The second surface 8 of the first heat conductive sheet 6 may be first physically or chemically roughened before the shaped layer is applied. A second bonded sheet is disposed on the first surface 12 of the second heat conductive sheet 1 Between the second surface and the second surface of the substrate 1. After the second bonding sheet 19 is hardened by heating or radiation, the heat sink structure π is bonded to the second surface of the base. After the side wall electrowinning, the wafer setting, the gold wire, the filling sealant, and the outer paste a foot are placed, the conventionally known process, the opening down wafer package assembly 200 as shown in FIG. 2 can be formed in this manner. According to the method proposed by the present invention, the first heat-conductive thin plate 6 and the second heat-conductive thin-film sheet 1 are heat-transferred to improve the heat dissipation effect; but the US patent us PatentN〇6 Qing 27 and still I_____12 This paper ruler i is applicable to the standard of the national standard (asJS) A4 (21_0 x 297 mm 1247752 A7 B7 V. Invention description (丨〆)
Patent No· 6,060,778所提出方法，並無法獲得此項提升散熱效 果之優點，因其先接合-熱導薄板與一電路板，而非如本發 ，所提出之方法，係將兩個或以上熱導薄板先進行接合，接 著才與一電路板接合。 所述之晶片載體塑膠基板丨可為一單層或多層基板，所述 基板係由介電材質（為形成絕緣層之用）與導電材質交互重 疊組成，所述之介電材質係可為一有機材料、纖維強化 (fiber-reinforced )之有機材料材或粒狀物強化 (particle-reinforced)之有機材料所組成，係如環氧樹脂、聚 乙醯胺（polyimide)、雙順丁稀二酸醯亞胺/三氮阱 (bismaldmide triazine)、氰酯類（cya_ este〇、聚苯環 四烯（polybenzocyclobutene)或其玻璃纖維組成物。該塑膠 晶片載體基板1最好在與散熱片結構17鍵結之前即先行完 成’以使得導通孔能夠穿越形成於基板丨，而形成開口向下晶 片封裝裝配構成。以本發明來說，當基板丨與散熱片結構17 鍵結時’由於基板已事先固化成形，因此形成基板丨期間之固 化收縮（cure shrinkage)動作，將可避免因固化收縮所導致 任何的麵曲或扭曲現象。 請再參閱圖一，散熱片103通常為銅或銅合金材質。眾所 習知，當實際操作溫度在3〇〇〜4〇〇°c間時，銅薄板會有軟化 現象。因此如果散熱片103的銅厚度太薄，低於〇5疆時，則 在製造所述瓣基板晶片封裝裝配構成1〇〇中的散熱片 時’將因散熱片103容易變形而難以控制，造成製程上極大困 擾。因此該銅製散熱片103之厚度至少應選擇在〇 5匪以上者 13 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公董_)一 經濟部智慧財產局員工消費合作社印製 1247572 . A7 ______B7__ 五、發明說明（丨）） 為佳。然而，若有需要薄散熱片103 (厚度薄於0.5 mm)時， 則一向以具較高機械強度之銅合金來形成散熱片103為佳，較 佳者為厚度0.1 mm以上。該銅合金之添加合金成分比例應佔 總銅合金重量的5%以下，如C194或C305銅合金；較佳者， 其添加合金成分比例應佔總銅合金重量的0 5%以下，如C151 銅合金，因添加較高的合金成分將使得銅合金具有較低之熱 導性（thermally conductivity)。在此須注意的是，本發明所 述之「銅」是指難以避免合金成分含量在重量比例0.1%以下 之銅合金。 然而，當應用本發明之三明治型散熱片結構17時，即可 解除銅散熱片之厚度需在0.5 mm以上之限制。舉例來說，厚 度皆為0.254 mm之第一熱導薄板6與第二熱導薄板1〇即可以 預浸材結合形成散熱片結構17，其對形成封裝裝配構成2〇〇 來說，已具足夠之硬度與厚度，而可克服形成晶片載體製程 中的翹曲現象；此時，在第一熱導薄板6與第二熱導薄板1〇 之間的鍵結層16，亦可由兩個或以上之預浸材所組成，更可 增加散熱片結構之機械強度。較佳者，該第一熱導薄板6與第 -熱‘薄板1G係可具有相同之厚度，對_形成晶片載體製 程中的翹曲現象，將具有最佳效果。 為使散熱片結構π能完全的防止環境偷，在散熱片17 四周之側壁係可覆上—保護層17a，如鎳、金、導熱顆粒填充 ^環氧樹脂、鑽石膜、類鑽石销等。當保護層m覆在散熱 17之四周側壁時，目表碰增加，亦刊 在本發明實施例中，所述之_薄片19係由一黏著層果 (請先閱讀背面之注意事項再填寫本頁) Φ----訂---------線— 14 1247572 經濟部智慧財產局員工消費合作社印製 A7 ------------ 五、發明說明（) 疊合多黏著層所組成。該黏著層係如一黏著材質、短薄片填 充（flake-filled)之黏著材、短纖維填充（flber_filled)之黏 著材或粒狀物填充（particle-filled)之黏著材。而因編織纖維 未填充於所述之黏著材料，所以本發明之黏著層也就非為預 /¾:材。该黏著層可為一（1)樹脂，係如環氧樹脂、聚乙醯胺 樹脂（polyimideresin)、聚氨酯（polyurethane)或丙烯酸樹 脂（acrylic)等；（2)異量分子聚合物（c〇p〇lymer)，係如 環氧-丙稀酸樹脂（epoxy-acrylic resin )、環氧-丁二稀樹脂 (epoxy-butadiene resin )或環氧-氨基甲酸酯樹脂 Upoxy-urethane)等；（3)聚合物混煉，係如ep〇xy resin/halogenated polyhydroxystyrene blend 或環氧樹脂 / 酚樹脂 混煉物（epoxy resin/phenolic resin blend)等。所述之有機材 料更可以經鹵素、矽樹脂（silicone)或亞磷酸鹽（ph〇sphite) 等加以更改性質。所述之短纖維（sh〇rt fiber)係以金屬、有 機或無機材料所製成，如鱗短纖維、aramid短纖維或玻璃短 纖維等’可填入所述之有機材料以增加機械強度並減低黏著 層之熱私脹係數。為達同一目的，短薄片（f|ake)或粒狀物 可添加於有機材料，短薄片係可如銀薄板或石墨薄片 (graphite) ’而粒狀物如石夕土顆粒（siiicaparticies)、硫酸鋇 顆粒、黏土（clay)、碳酸約、milamine particles、聚苯乙烯 (polystyrene)、銅顆粒或銀顆粒等。所述之黏著層亦可包含 其他添加物’如化學催化劑、抗氧化劑、流變劑（re〇l〇gical agent)、偶合劑或著色劑（coloragent)等。 所述黏著材的選擇對於減低製造開口向下晶片載體時的 _ 15 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公爱） (請先閱讀背面之注意事項再填寫本頁) 丨·----訂---------線 1·丨"41^—·--- 1247572 A7 五、發明說明（（/) 翹曲或扭曲現象非常重要。現今業界中，黏著材主要是以熱 固型（thermalsetting)樹脂為主流。典型的熱固型樹脂係在 較高的溫度巾_，室溫巾冷卻。·，較佳者，黏著層材 料為足夠柔軟（亦即具低機械係數，m—l醜臟s)， 材料可以擴張變形以補償在固化步驟中的固化收縮。正常來 說，降低黏著層之熱膨脹係數（CTE)，及加工前部分固化 該熱固型樹脂，將有助於得致低翹曲之良好鍵結效果。但實 質t具高機械係數之預浸材對開口向下晶片載體來說，卻難 以提供良好的鍵結效果。為達到良好的鍵結效果，太高填充 材的裝載而具較高機械性質，或太低填充材的裝載以提供較 高的鱗脹係數輯形都須避免。此外，黏著層的熱膨服係 數最好在150 ppmrc以下，較佳者在1()()卯心以下，而5〇 ppm/°C為最佳。 在本發明之較佳實施例，所述之第一鍵結薄片16與第二 鍵結薄片19並不限定於任何形狀或結構。 在本發明之另-較佳實施例，散熱片結構可設有如刀刃 鋒做之突岐結部（sharped_edge eGnneetw)。如圖五所示， 若干刀77鋒機之連結·係形餅第二熱導薄咖之第一 彦 表面12上’且該第表面12亦財—黏著增_14，係如氧 | 化層或輕合劑等。以熱壓方式，藉著鍵結薄片19，將三明户 | 缝熱片結構17與基板i接合。同時，各該若干刀刀鋒利般: | 連結部20亦穿透鍵結薄片19，而與基之第二表面$上預定 | 之接觸墊（contact pad)(圖中未示）連結。當铁，接人前 ! 亦可將鍵結薄片19以雷麵孔或機械鑽孔方式先行在^位The method proposed in Patent No. 6,060,778 does not achieve the advantage of improving the heat dissipation effect, because it first joins the heat conductive sheet and a circuit board, instead of the method proposed in the present invention, two or more heats are used. The foil is first joined and then joined to a board. The wafer carrier plastic substrate can be a single layer or a multi-layer substrate, and the substrate is composed of a dielectric material (for forming an insulating layer) and a conductive material, and the dielectric material can be a Organic material, fiber-reinforced organic material or particle-reinforced organic material such as epoxy resin, polyimide, bis-butyl succinate Bismudmide triazine, cyano ester (cya_ este〇, polybenzocyclobutene or its glass fiber composition. The plastic wafer carrier substrate 1 is preferably bonded to the heat sink structure 17 The junction is completed before the 'to enable the via hole to pass through the substrate 丨 to form an opening down wafer package assembly. In the present invention, when the substrate 键 is bonded to the heat sink structure 17, 'because the substrate has been previously cured Forming, so the cure shrinkage action during the formation of the substrate 将 will avoid any buckling or distortion caused by curing shrinkage. Please refer to Figure 1 again. The sheet 103 is usually made of copper or a copper alloy. It is known that when the actual operating temperature is between 3 〇〇 4 〇〇 ° c, the copper sheet may soften. Therefore, if the copper thickness of the heat sink 103 is too thin, When it is lower than 〇5, it is difficult to control the heat sink 103 due to the deformation of the heat sink 103 when manufacturing the heat sink of the valve substrate package assembly structure, which causes great trouble in the process. Therefore, the copper heat sink 103 The thickness should be at least 〇5匪 or more. 13 The paper size applies to the Chinese National Standard (CNS) A4 specification (210 X 297 _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ Note (丨)) is preferred. However, if a thin heat sink 103 (thickness is thinner than 0.5 mm) is required, it is preferable to form the heat sink 103 with a copper alloy having a high mechanical strength, preferably a thickness of 0.1 mm or more. The proportion of the added alloy component of the copper alloy should be less than 5% by weight of the total copper alloy, such as C194 or C305 copper alloy; preferably, the proportion of the added alloy component should be less than 05% of the total copper alloy weight, such as C151 copper. Alloys, due to the addition of higher alloy compositions, will result in a copper having a lower thermal conductivity. It is to be noted that "copper" as used in the present invention means a copper alloy which is difficult to avoid an alloy component content of 0.1% by weight or less. However, when the sandwich-type heat sink structure 17 of the present invention is applied, the thickness of the copper heat sink can be released to a limit of 0.5 mm or more. For example, the first heat conductive sheet 6 and the second heat conductive sheet 1 having a thickness of 0.254 mm can be combined with the prepreg to form the heat sink structure 17, which has been formed to form a package assembly. Sufficient hardness and thickness can overcome the warpage phenomenon in the process of forming the wafer carrier; at this time, the bonding layer 16 between the first thermal conductive sheet 6 and the second thermal conductive sheet 1〇 can also be composed of two or The above prepreg composition can increase the mechanical strength of the heat sink structure. Preferably, the first heat conductive sheet 6 and the first heat sheet 1G may have the same thickness, which will have the best effect on the warpage phenomenon in the process of forming the wafer carrier. In order to prevent the heat sink structure π from completely preventing the environment from being stolen, the side walls around the heat sink 17 may be covered with a protective layer 17a, such as nickel, gold, heat conductive particles filled with epoxy resin, diamond film, diamond-like pins, and the like. When the protective layer m is applied to the side wall of the heat dissipating surface 17, the mesh surface is increased, and it is also reported in the embodiment of the present invention. The thin film 19 is composed of an adhesive layer (please read the back note first and then fill in the book). Page) Φ----订---------线— 14 1247572 Ministry of Economic Affairs Intellectual Property Bureau employee consumption cooperative printed A7 ------------ V. Invention description () The combination of multiple adhesive layers. The adhesive layer is an adhesive material, a flake-filled adhesive, a flesh-filled adhesive or a particle-filled adhesive. Since the woven fiber is not filled with the adhesive material, the adhesive layer of the present invention is not a pre-material. The adhesive layer may be a (1) resin such as an epoxy resin, a polyimideesin, a polyurethane or an acrylic; (2) a heterogeneous molecular polymer (c〇p) 〇lymer), such as epoxy-acrylic resin, epoxy-butadiene resin or epoxy-urethane resin; (3) The polymer is kneaded, such as ep〇xy resin/halogenated polyhydroxystyrene blend or epoxy resin/phenolic resin blend. The organic material may be modified by halogen, silicone or phphedsite. The short fiber (sh〇rt fiber) is made of metal, organic or inorganic materials, such as squama short fibers, arami short fibers or glass short fibers, etc., which can be filled with the organic material to increase mechanical strength and Reduce the thermal expansion coefficient of the adhesive layer. For the same purpose, short flakes (f|ake) or granules may be added to the organic material, short flakes may be as silver thin plates or graphite flakes, and granules such as siiicaparticies, sulfuric acid钡 particles, clay, carbonic acid, milamine particles, polystyrene, copper particles or silver particles. The adhesive layer may also contain other additives such as chemical catalysts, antioxidants, rheological agents, coupling agents or color agents. The selection of the adhesive material is applicable to the Chinese National Standard (CNS) A4 specification (210 X 297 public) for reducing the paper size when manufacturing the opening downward wafer carrier (please read the back note and fill out this page)丨·----订---------Line 1·丨"41^—·--- 1247572 A7 V. Invention Description ((/) Warpage or distortion is very important. Nowadays in the industry The adhesive material is mainly made up of thermal setting resin. The typical thermosetting resin is cooled at a higher temperature towel, and the room temperature towel is cooled. · Preferably, the adhesive layer material is soft enough (also That is, with a low mechanical coefficient, m-1 ugly s), the material can be expanded and deformed to compensate for the curing shrinkage during the curing step. Normally, the thermal expansion coefficient (CTE) of the adhesive layer is lowered, and the thermosetting is partially cured before processing. The type of resin will contribute to the good bonding effect of low warpage. However, the prepreg with high mechanical coefficient is difficult to provide a good bonding effect for the open wafer carrier. Bonding effect, too high filler loading and high mechanical The loading of the material, or too low filler material, to provide a high degree of swell expansion factor must be avoided. In addition, the thermal expansion coefficient of the adhesive layer is preferably below 150 ppmrc, preferably at 1 () () Hereinafter, 5 〇 ppm / ° C is optimal. In the preferred embodiment of the present invention, the first bonding sheet 16 and the second bonding sheet 19 are not limited to any shape or structure. In another preferred embodiment, the heat sink structure may be provided with a sharpened edge (sharped_edge eGnneetw). As shown in FIG. 5, a plurality of knives 77 front machine connection system type cake second thermal conduction thin coffee The first sacral surface 12 is 'and the first surface 12 is also rich-adhesively _14, such as oxygen|chemical layer or light mixture agent, etc.. By hot pressing, by bonding the thin film 19, Sanminghu | The sheet structure 17 is joined to the substrate i. At the same time, each of the plurality of blades is sharp: | the joint portion 20 also penetrates the bonding sheet 19, and a contact pad with a predetermined surface on the second surface of the base (Fig. Linked in the middle. When the iron is connected, the key sheet 19 can also be firstly drilled in a thunder face or mechanically drilled.
Ij_ 16 本紙張尺度適用T國國家標準（CNS)A4規格（趟x 297公6—^_______Ij_ 16 This paper scale applies to the National Standard (CNS) A4 specification of T (趟x 297 public 6—^_______
I ; 0^ · -----訂---------線· (請先閱讀背面之注意事項再填寫本頁) 1247572 A7 ------- 五、發明說明（（έ) ，進灯鑽孔’則將更有助於連結部2〇穿過鍵結薄片ΐ9而與預 定接=塾連結。而所述之各該若干刀刃鋒利般之連結部謝系 為電^^生或熱導性，且可為任何形狀與結構。此種類型之連 結可使散熱片結構17參與扮演如「接地」的角色，並提供一 熱傳導途#，可傳導晶片内部所產生的熱能。如此，可增進 所述塑膠基板開口向下晶片載體的熱電性。 在本發明之另-較佳實施例中，散熱片結構係可使用兩 個或更多的熱導薄板。如圖六所示，第二熱導薄妨係利用 第一鍵結薄片25與另-第二熱導薄板23貼合，而形成熱導薄 板疊合物26，該鮮薄板26並具有可容置晶#之開口27，熱 導薄板叠合物26藉另一第一鍵結薄板Μ與第一熱導薄板观 合’以形成散熱片結構28。-黏著增強劑29，係如氧化層或 耦合劑，係可形成於各熱導薄板22,23之外側表面以增加^黏 著性。該散熱片結構28可藉著第二鍵結薄片31與塑膠電路基 板30結合，而形成開口向下之娜晶片載體。其中第一鍵^ 薄片25係為預浸材，而第二鍵結薄片31係為單層黏著層戋属 合多層黏著層所組成，該黏著層係可為一黏著材、短^片& 充之黏著材、纖維填充之黏著材或粒狀填充之黏著材。、 抑在本發明之另-較佳實補，所述之W飾並不限定 於單晶片或多晶片封裝。其中一典型的多晶片封裝方式如圖 七所示，一電路基板32包含兩開口33, 34，各該開口皆1可^ 置一晶片。以熱壓方式，藉助著鍵結薄片％，將散熱片二構 35與電路基板32接合，以製成一多晶片載體。 … 在本發明之較佳實施例，所述之晶片載體在業界量產 __17 本紙張尺度適用中關家標準（CNS)A4規格⑽χ 297公髮）I ; 0^ · -----Order --------- Line · (Please read the note on the back and fill out this page) 1247572 A7 ------- V. Invention Description (( έ), the entrance of the lamp into the hole will be more helpful to the connecting portion 2〇 through the bonding sheet ΐ9 and connected with the predetermined connection = 。, and each of the several sharp edges of the blade is said to be electric ^ Raw or thermally conductive, and can be any shape and structure. This type of connection allows the heat sink structure 17 to participate in a role such as "grounding" and provides a thermal conduction path that conducts heat generated inside the wafer. Thus, the thermoelectricity of the plastic substrate opening to the lower wafer carrier can be improved. In another preferred embodiment of the invention, the heat sink structure can use two or more thermal conductive sheets. It is shown that the second thermal conductive film is bonded to the other-second thermal conductive sheet 23 by the first bonding sheet 25 to form the thermal conductive sheet laminate 26, and the fresh thin sheet 26 has a accommodating crystal. The opening 27, the thermal conductive sheet laminate 26 is joined to the first thermal conductive sheet by another first bonding sheet ' to form the fin structure 28. - Adhesion enhancer 29 For example, an oxide layer or a coupling agent may be formed on the outer surface of each of the heat conductive sheets 22, 23 to increase the adhesion. The heat sink structure 28 may be bonded to the plastic circuit substrate 30 by the second bonding sheet 31. Forming an open-down wafer carrier, wherein the first bonding film 25 is a prepreg, and the second bonding film 31 is a single-layer adhesive layer comprising a plurality of adhesive layers, and the adhesive layer can be An adhesive material, a short piece & an adhesive material, a fiber-filled adhesive material or a granular filled adhesive material. Further, in addition to the present invention, the W decoration is not limited to a single A wafer or multi-chip package. A typical multi-chip package is shown in Figure 7. A circuit substrate 32 includes two openings 33, 34, each of which can be used to form a wafer. % of the foil is bonded to the circuit substrate 32 to form a multi-wafer carrier. In the preferred embodiment of the present invention, the wafer carrier is mass-produced in the industry. Guanjia Standard (CNS) A4 Specifications (10) 297 297 mil)
；一 Λ ·1·----訂---------線- (請先閲讀背面之注意事項再填寫本頁) 1247572 經濟部智慧財產局員工消費合作社印製 A7 五、發明說明（P ) 2 ’可以藉助鍵結薄片而將三明治型散熱片雜（panel)接 合在電路紐她上。輯祕板可為购雜餘構，係 如細長片（strip)等。 、>、酋在本發明之較佳實細巾，所述之晶#載體並不限定於 半導體晶片封裝’然亦可應用於其他晶片型態（chip咖） 之f子凡件、光元件或光電元件等，例如電阻（resist〇r)、振 ，器（oscillators)、雷射發光二極體（laser di〇des)、光感應 器（〇pticaisensors)及熱感應器（thermalsens〇rs)等。 綜上所述’本發明係揭露一種具支撐效果之散熱片構成 應用於晶片封裝基板製程，可在製程上消龍曲或扭曲現 象並提供電路層f摘陕歸性、冑抗齡及良好可靠度 之製知。本發明於習知技術領域上無相關之技術揭露，已具 新穎性；本發明之技術内容可確實解決魏域之問題，且方 法原理屬非根據習知技藝而易於完成者 述，實具進步性；又本發明採用之技術方法及 係屬於本技術領域，亦具產業之可性。，基於鼓勵 發月目的，專利之惠准應根據專利法與專利審查基準之精 神相L貝審查委員秉持多年之審查實務經驗，亦能認同 本案符合專利要件及專利精神，此種技術並非—般人士所 易於能思及者，此點尚祈貴審查委員公正考量明蓉之，盼 能早曰核准專利’實為感禱。 U以上所述僅為本發明電路基板之結構與製程較佳 實施例非用以限制本發明之魏範圍，任何熟習該項技 藝者在不$背本侧之精神雌之修改，均應屬於本發明之 ^ ---，丨 -----訂---------線#q (請先閱讀背面之注意事項再填寫本頁) 私紙張尺 巾關冢鮮（CNS)A4規格（2ι〇- 297公釐） 1247572 A7 _B7_ 五、發明說明（丨汉） 範圍，因此本發明之保護範圍當以下列所述之申請專利範圍 做為依據。 (請先閱讀背面之注意事項再填寫本頁) 經濟部智慧財產局員工消費合作社印製 9 1 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公釐）;一Λ ·1·----订---------线- (Please read the notes on the back and fill out this page) 1247572 Ministry of Economic Affairs Intellectual Property Bureau employees consumption cooperatives printed A7 V. Invention Description (P) 2 'The sandwich-type heat sink panel can be bonded to the circuit by means of the bonding sheet. The secret board can be a spare structure, such as a sliver. , >, the United States in the preferred thin towel of the present invention, the crystal #carrier is not limited to the semiconductor chip package, but can also be applied to other wafer types (chip coffee), the sub-components, optical components Or photovoltaic elements, such as resistors, oscillators, laser dipoles, 〇pticaisensors, and thermal sensors (thermalsens〇rs) . In summary, the present invention discloses that a heat sink having a supporting effect is applied to a wafer package substrate process, which can eliminate the distortion or distortion phenomenon in the process and provide the circuit layer f, the age, the age, and the reliability. Knowing the degree. The present invention has no novelty in the prior art, and has been novel; the technical content of the present invention can solve the problem of the Wei domain, and the method principle is not easy to complete according to the prior art, and the progress is improved. The technical methods and systems used in the present invention belong to the technical field and are also industrially feasible. Based on the purpose of encouraging the purpose of the month of the month, the patent benefits should be based on the spirit of the patent law and the patent examination benchmark. The LB review committee has many years of reviewing practical experience, and can also agree that the case is in line with the patent requirements and the spirit of the patent. It is easy for people to think about it. At this point, the members of the review committee have just considered Ming Rongzhi and hope that the patent can be approved as early as possible. The above is only the structure and process of the circuit board of the present invention. The preferred embodiment is not intended to limit the scope of the present invention. Any person skilled in the art who is not in the back side of the present invention should belong to the present invention. Invented ^ ---, 丨-----订----线#q (Please read the notes on the back and fill out this page) Private paper towel wipes fresh (CNS) A4 Specification (2ι〇- 297 mm) 1247572 A7 _B7_ V. Scope of invention (丨汉) Scope, therefore the scope of protection of the present invention is based on the scope of the patent application described below. (Please read the notes on the back and fill out this page.) Printed by the Consumer Intellectual Property Office of the Ministry of Economic Affairs. 9 1 This paper scale applies the Chinese National Standard (CNS) A4 specification (210 X 297 mm).