1240313 玫、發明說明： 【發明所屬之技術領域】 本發明大體上係關於離子束技術，且尤其有關於離子束能量分佈之 監視及控制方法及裝置。 【先前技術】 離子束技術主要係利用離子源產生離子’經由筛選、聚欽、加速/ 減速等等處理以形成帶有特定能量之離子束，可施加至各種物體或人體 之特定區域（即目標區），而有各種不同應用。目前離子束技術可用於例 0 如半導體積體電路製程之離子佈植、高分子加工與合成、癌症疾病之治 療等等。 為清楚闡述故，以下係配合積體電路製程所使用之離子佈植技術來 說明離子束技術在監控能量分佈之精確度方面所面臨的問題，以及本發 明就此所提供之解決之道。惟本發明並不限於此範圍，而可應用於各種 使用離子束技術之領域。 隨著積體電路深次微米(deep sub-micron)之製程技術的進步與發 展，積體電路元件逐漸高度積集化，元件尺寸大幅縮小，元件所需之接 面深度亦隨之縮小。例如，以64M之DRAM而言，若以〇·35μιη之製 馨 程製作，其接面深度約為70nm;而對256Μ之DRAM而言，若以〇.25μιη 之製程製作，其接面深產則僅有約50nm。因此，對於淺接面(shallow junction)、甚至超淺接面(uitra shaU〇wjuncti〇n)深度之精確控制的需求曰 趨啟切。 目則最被廣泛使用於製作淺接面的技術為離子佈值技術。為能精確 拴制離子佈植所產生之元件淺接面之深度，需要有中/低能量、且精確 xrj之離子佈植機台。然而，離子佈植機之使用者所設定(亦為使用者 所希望得到)的離子佈植能量，與實際佈植到晶圓上的能量會有誤差。 首先，使用者所設定之離子佈值機之離子束能量，為離子佈植機之離子 5 H:\Barbara\SPEC93040-NANYA.doc 南亞9U46(常在) 1240313 源所發射之離子束所帶的能量；該離子束在經由加速或減速、並行經一： 段距離後抵達並佈植到晶圓上，此時該離子束實際所具有的能量，可能 已經和原始發射時所帶的能量不同。其次，離子束中某些離子所帶的能 量可能高於或低於使用者設定的離子束能量值，亦即，離子束中的能量 分佈並非完全-致。一般而言，離子束之能量分佈如圖i所示，其中橫 軸表不離子束之能量，縱軸表示離子束造成之電流量，此電流量可利用 法拉第杯(Faraday Cup)予以測量。圖丨顯示出，一離子束中之多數離子 通常係具有接近於設定能量E之能量，少數軒之能量會偏離設定能量 E ’其能量分佈於E1與E2之間。 這種誤差在實施高能量離子佈植時，對離子佈植及其所產生的元件鲁 f面並無顯著的影響，例如，於2〇〇KeV高能量離子佈植時，施v能 里之偏差僅造成〇·1。/。之接面輪輪r〇flle)偏移；但是，在低能量、淺接 面的離子佈植時’此專誤差會嚴重影響淺接面的輪廓。舉例來說，對於 2KeV的減量離子雜，綱…的能量偏差就會導致淺接面輪廓的㈣ 偏移。此種偏移對深次微米的IC製造極為不利。 。目別在離子佈植操作前，通常係利用二次離子質譜儀⑼ms)測量晶 ，^所植入離子之輪廓，以決定所欲之離子佈植能量，然而s祕之測 里“作複雜費4 ’更因前述離子束能量之偏移問題使得s祕必須多次 測量綠達^德#果，而使機科待制結果增加停機時間。 « 口此而要一種能於離子束施加之操作前事先監控離子束能量分佈 之方案，以解決前述問題。本發明即滿足此項需求。 【發明内容】 f月目的為提供一種監視離子束能量分佈之方法及裝置，可於離 子束施加之操作前事先測得離子束能量分佈，且易於配合實施於現有用 於離子^技術之_方法及裝置，不舒以額外更改。 本毛月之另一目的為提供一種利用前述監視方法以控制離子束能量 H:\Barbara\SPEC93040-NANYA.doc 南亞92246(常在) 6 1240313 =::法7改善離子束能量之分佈，而獲得較高純度/精確度之離.· -欠數=化可減少半賴餘之料佈植操作·之sims之測量 -人數，間化製程，降低成本。 里 田依本發明之—方面’一種監視離子束能量分佈之方法，該離子束係 一以=離子施加至目標區，該方法包含下列步驟：將離子束能量設定於 η預定值，於離子束所行經之路徑中，利用施加不同電壓產生不同之電 #以控制離子束之通過；以及檢測通過之離子束所產生之電流量，藉 此所得到之電壓與電流間之㈣即反映該就值之離子束能量之分/ #依本發明之另-方面，__於麵方法之監_子束能量分佈之 褒置，其包含-導電元件，以可移動方式設於離子束所行經之路徑中， 並具有-開孔，可供離子束通過；_電壓產生器，輸出不同電壓至該導 電讀’以於v電兀件中產生不同電場，用以控制離子束之通過；以及 一電流檢測器，用以檢測通過之離子束所產生之電流量。 依本發明之又-方面，-種利用前述方法之控獅子束能量分佈之 方法’射法包含下列步驟：根據所得狀賴與電流間之關係資料， 調整離子束參數；取得進-步之電壓與電流間之關係資料；以及重複前 述步驟。 在正常之離子施加操作中，可藉由移動該導電元件，使其離開離子 束所行經之路徑，或使該電壓產生器不施加電壓等手段，而不實施本發# 明之裝置與方法，因而不會干擾正常之離子施加操作。 【實施方式】 現請參照圖2，其顯示本發明之監視離子束能量分佈之方法實施於 習知離子佈植機之實施例示意圖。 於此例中，本發明方法主要藉由監視裝置1〇來實施，監視裝置1〇 包含一導電板11，其上具有一開孔12，該開孔12可以配合所通過的離 子束之尺寸及/或形狀，而具有適當的尺寸及/或形狀。導電板n可由石 H:\Barbara\SPEC93040-NANYA.doc 南亞92246(常在) 7 1240313 墨(g^te)、翻(M〇)或鐫(W)等材料所構成。導電板π可由例如機械手， 臂(未顯示)固持並移動。-電壓供應器14電連接至導電板η，供鹿不 问之電壓給該導電板U，於該導電板u上產生不同電場。 旦於習知之佈植操作時，離子佈植機2〇之離子源21產生具有設定能 ，且通常帶正電荷之離子束3卜經由磁性分析器(咖即心 analyzer)22 适擇所欲之離子而產生離子束32，之後可通過適當光學/加速/減速裝置 (未顯示)再植入設於支撐23上之目標晶圓24，該支撐23可藉由電動機 (未顯示)予以旋轉，使得其上裝設之複數個目標晶圓24可分別接受離子 佈植。電流檢測器25(例如法拉第杯)於實施電流檢測時係藉由例如機械 :臂(未顯示)置於極靠近支樓23之前方，以檢測離子束32所產生之電 φ 流量。若不需檢測電流，則以例如該機械手臂(未顯示)將其移離離子束 行系二之路徑。或者’可將電流檢測器2S設於極靠近支撐a之後方(未 顯示）’亦可將電流檢測器％設於支撐Μ上(未顯示），皆可達成相同之 電流檢測功能。 在此離子佈植操作中，可利用例如機械手臂(未顯示)將導電板u移 動離開離子束行社職，或使供應器Μ提供的為G，使導 電板11上無電場產生，因而不影響離子束32之通過，此時離子束32 即相同於通過導電板U之離子束33。 接著再參照圖2實施例說明於非佈植操作時實施本發明之監視離子鲁 佈植機之離子束能量分佈之方法。 離子源21如佈植操作時產生具有設定能量且通常帶正電荷之離子 束31 ’且經由磁性分析器22，選擇所欲離子而產生離子束％。 利用例如機械手臂(未顯示)將導電板11設置於離子束 32行經之路 徑上’並使導電板11之開孔12對準離子束32，通常使導電板11位於 電流檢測器25之前，而電流檢測器25位於支撐23之前，較佳為三者 極靠近’以使得所監視之離子束能量分佈與未來欲實際佈植至晶圓上之 離子束能量分佈極為相近，亦即兩者差異可略而不計。 8 H:\Barbara\SPEC93040-NANYA.doc 南亞92246(常在） 1240313 根據所設定之離子束能量，調整電壓供應器14以提供多種電壓(於 此例中係正電壓)至導電板11，在導電板11上形成多種不同強度之電 場。於一特定電場強度下，離子束32中僅有大於該特定能量之離子可 通過導電板11之開孔12，其餘小於或等於該特定能量之離子均被導電 板11攔截’而不能穿過開孔12 ’使得離子束32於各種電場強度下通 過開孔12後形成具有各種不同數量離子之離子束33。 例如，當離子束之設定能量為200eV且其偏差為10%時，則其能量 分佈自180eV至220eV，假設如圖1所示之能量分佈，其中E=2〇〇eV，1240313 Description of the invention: [Technical field to which the invention belongs] The present invention relates generally to ion beam technology, and in particular, to a method and device for monitoring and controlling ion beam energy distribution. [Previous technology] Ion beam technology mainly uses the ion source to generate ions. Through screening, polyqin, acceleration / deceleration, etc. to form an ion beam with specific energy, which can be applied to various objects or specific areas of the human body (ie Target area), and there are different applications. At present, ion beam technology can be used in, for example, ion implantation in semiconductor integrated circuit manufacturing processes, polymer processing and synthesis, and cancer disease treatment. For the sake of clarity, the following is a description of the problems faced by the ion beam technology in monitoring the accuracy of energy distribution in conjunction with the ion implantation technology used in integrated circuit manufacturing processes, and the solution provided by the present invention. However, the present invention is not limited to this range, but can be applied to various fields using ion beam technology. With the advancement and development of deep sub-micron process technology for integrated circuits, integrated circuit components are gradually highly integrated, the size of components is greatly reduced, and the required interface depth of components is also reduced. For example, for a 64M DRAM, if it is produced by the 0.35μιη process, its junction depth is about 70nm; and for a 256M DRAM, if it is produced by the 0.25μm process, its junction is deeply produced Only about 50nm. Therefore, the need for precise control of the depth of shallow junctions and even ultra-shallow junctions (uitra sha owjunctión) has become increasingly important. At present, the most widely used technology for making shallow junctions is the ion cloth value technology. In order to accurately bind the depth of the shallow junction of the components produced by ion implantation, an ion implanter with medium / low energy and accurate xrj is required. However, the ion implantation energy set by the user of the ion implantation machine (also desired by the user) may differ from the energy actually implanted on the wafer. First, the ion beam energy set by the user is the ion beam energy of the ion implanter. 5 H: \ Barbara \ SPEC93040-NANYA.doc South Asia 9U46 (often) 1240313 Energy; the ion beam arrives at the wafer after being accelerated or decelerated in parallel for a distance and is implanted on the wafer. At this time, the actual energy of the ion beam may already be different from the energy carried in the original emission. Secondly, the energy carried by some ions in the ion beam may be higher or lower than the ion beam energy value set by the user, that is, the energy distribution in the ion beam is not completely uniform. In general, the energy distribution of an ion beam is shown in Figure i, where the horizontal axis represents the energy of the ion beam, and the vertical axis represents the amount of current caused by the ion beam. This amount of current can be measured using the Faraday Cup. Figure 丨 shows that most of the ions in an ion beam usually have energy close to the set energy E, and the energy of a few Xuanxuan will deviate from the set energy E ', and its energy is distributed between E1 and E2. This kind of error has no significant effect on the ion implantation and the element f-planes during the implementation of high-energy ion implantation. For example, in the 200KeV high-energy ion implantation, Deviations cause only 0.1. /. The contact wheel (r0flle) is offset; however, this error can seriously affect the contour of the shallow joint when implanting ions with low energy and shallow joints. For example, for a 2KeV-reduced ionic impurity, the energy deviation of the dimension ... will cause a ㈣ shift of the shallow junction profile. Such offsets are extremely detrimental to deep sub-micron IC manufacturing. . Before the ion implantation operation, the secondary ion mass spectrometer (ms) is usually used to measure the crystal and the contour of the implanted ions to determine the desired ion implantation energy. 4 'Because of the above-mentioned problem of the ion beam energy shift, Secret has to measure the Lvda ^ de # fruit multiple times, which will increase the machine downtime and increase the downtime. «Therefore, an operation that can be applied to the ion beam is required. The solution to monitor the energy distribution of the ion beam beforehand in order to solve the aforementioned problem. The present invention meets this need. [Summary of the Invention] The purpose of the present invention is to provide a method and a device for monitoring the energy distribution of an ion beam, which can be operated during the application of the ion beam. The energy distribution of the ion beam is measured beforehand, and it is easy to cooperate with the existing methods and devices for ion technology. It is not convenient to make additional changes. Another purpose of this month is to provide a method for controlling the ion beam by using the aforementioned monitoring method. Energy H: \ Barbara \ SPEC93040-NANYA.doc South Asia 92246 (usually) 6 1240313 = :: Method 7 improves the ion beam energy distribution and obtains higher purity / accuracy separation.--Undernumber = reduced half Residual material implantation operation · Measurement of sims-number of people, inter-process, reduce cost. Rita according to the invention-aspect 'a method of monitoring the energy distribution of an ion beam, the ion beam is applied to the target area with ions. The method includes the following steps: setting the ion beam energy to a predetermined value of η, and applying different voltages to generate different electric charges in the path the ion beam travels to control the passage of the ion beam; and detecting the generation of the passing ion beam The amount of current between the voltage and the current obtained by this means that the value of the ion beam energy is reflected in the value / # According to another aspect of the present invention, __ monitoring of the surface method _ sub beam energy distribution Device, which includes a conductive element, which is movably disposed in the path that the ion beam passes through, and has an opening for the ion beam to pass through; a voltage generator that outputs different voltages to the conductive read, 'vs. v Different electric fields are generated in the electric element to control the passage of the ion beam; and a current detector is used to detect the amount of current generated by the passing ion beam. According to another aspect of the present invention, a kind of utilization of the foregoing is provided. The method of controlling the energy distribution of the lion beam 'method includes the following steps: adjusting the ion beam parameters according to the obtained relationship data between the current and the current; obtaining the further relationship between the voltage and the current; and repeating the foregoing steps. In a normal ion application operation, the conductive element can be moved away from the path traveled by the ion beam, or the voltage generator can be applied without applying the device and method of the present invention. Does not interfere with normal ion application operations. [Embodiment] Please refer to FIG. 2, which shows a schematic diagram of an embodiment of a conventional ion implanter implemented in the method of monitoring the energy distribution of an ion beam of the present invention. In this example, this The method of the invention is mainly implemented by a monitoring device 10, which includes a conductive plate 11 having an opening 12 therein, which can be matched with the size and / or shape of the ion beam passed therethrough. Appropriate size and / or shape. The conductive plate n may be made of a material such as H: \ Barbara \ SPEC93040-NANYA.doc South Asia 92246 (often) 7 1240313 ink (g ^ te), turn (M〇) or 镌 (W). The conductive plate π can be held and moved by, for example, a robot arm, an arm (not shown). -The voltage supplier 14 is electrically connected to the conductive plate η, and supplies a different voltage to the conductive plate U to generate different electric fields on the conductive plate u. Once in the conventional implantation operation, the ion source 21 of the ion implanter 20 generates an ion beam with a set energy and usually a positive charge. The ion beam is passed through a magnetic analyzer 22 The ion beam 32 is generated by ions, and can be re-implanted into a target wafer 24 provided on a support 23 through an appropriate optical / acceleration / deceleration device (not shown). The support 23 can be rotated by a motor (not shown) such that A plurality of target wafers 24 mounted thereon can receive ion implantation, respectively. The current detector 25 (for example, a Faraday cup) is used to detect the electric flux φ generated by the ion beam 32 by, for example, placing a mechanical arm (not shown) in front of the tower 23 in advance. If it is not necessary to detect the current, for example, the robot arm (not shown) is moved away from the path of the ion beam system. Alternatively, ‘the current detector 2S may be placed very close to the support a (not shown)’ or the current detector% may be provided on the support M (not shown), which can achieve the same current detection function. In this ion implantation operation, for example, a robotic arm (not shown) can be used to move the conductive plate u away from the ion beam, or the supply provided by the supply device M is G, so that no electric field is generated on the conductive plate 11, so that Affects the passage of the ion beam 32. At this time, the ion beam 32 is the same as the ion beam 33 passing through the conductive plate U. Next, the method for monitoring the energy distribution of the ion beam of the ion beam implanter during the non-implantation operation will be described with reference to the embodiment of FIG. 2. The ion source 21 generates an ion beam 31 ′ having a set energy and usually a positive charge during the implantation operation. The magnetic analyzer 22 selects a desired ion to generate an ion beam%. By using, for example, a robotic arm (not shown) to place the conductive plate 11 on the path through which the ion beam 32 passes, and to align the opening 12 of the conductive plate 11 with the ion beam 32, the conductive plate 11 is usually positioned in front of the current detector 25, and The current detector 25 is located before the support 23, preferably the three are very close to each other, so that the monitored ion beam energy distribution is very close to the ion beam energy distribution to be actually implanted on the wafer in the future, that is, the difference between the two can be Neglect. 8 H: \ Barbara \ SPEC93040-NANYA.doc South Asia 92246 (usually) 1240313 Adjust the voltage supplier 14 to provide various voltages (positive voltage in this example) to the conductive plate 11 according to the set ion beam energy. A plurality of electric fields of different strengths are formed on the conductive plate 11. Under a specific electric field strength, only ions greater than the specific energy in the ion beam 32 can pass through the openings 12 of the conductive plate 11, and the remaining ions less than or equal to the specific energy are intercepted by the conductive plate 11 and cannot pass through. The holes 12 ′ allow the ion beam 32 to pass through the openings 12 under various electric field intensities to form ion beams 33 with various numbers of ions. For example, when the ion beam has a set energy of 200 eV and its deviation is 10%, its energy distribution is from 180 eV to 220 eV. Assume the energy distribution shown in Figure 1, where E = 2000 eV,
El-220eV ’ E2-180eV ’此時可在導電板Η上施加至22〇v之電 壓產生不同強度之電場，以控制離子束32通過開孔12之離子數量。 之後利用電流檢測器25例如法拉第杯測量通過開孔12之離子束33 所產生之電流里，如此即可得到電壓供應器14所提供之電壓與設定能 量之離子束所產生電流間之關係曲線圖。由於該供應之特定電壓對應於 導電板11上產生之特定電場強度，且該特定電場強度會影響通過導電 板11之具有特定能量之離子數目，故該電壓與電流間之關係即反映出 如圖1所示之設定能量之離子束能量分佈。 以如述貫例而吕’在導電板11上施加18〇v至220V之不同電壓， 所測知之電壓供應|| 14之電壓與離子束電流間之_曲線圖可如圖3 所示。其中，當電壓由180V增加至220V時，通過導電板11之離子束 33電流量逐漸變小，表示通過導電板u之離子數目魏減少。當施加 180V電壓時’所有離子均可通過開孔12。當電壓大於2,之區域時， 大。卩分離子被撞住，只有少數能量大於2〇〇eV的離子可通過開孔12。 當施加220V電壓時，無任何離子可通過開孔12。 胃更進-步t： ’可湘前収監财法以控讎刊^植機之離子束能 里分佈’首先’可依據前述所檢測出之電壓與電流間之關係，調整離子 佈植機之離子束參數，例如可藉由調整離子佈植機2()之磁性分析器22 來實施，再重複實施上述的監視及調整步驟，直到所得之離子束能量分 H:\Barbara\SPEC93040-NANYA.doc 南亞92246(常在) 9 1240313 佈如所期望取，如此可使軒赖度/精顧提高，齡將偏差由ι〇% 降低至5〇/0。以前述實例而言，可如圖4所示，調整後之離子束之能量 分佈為由195eV至205eV，或為更緻密的能量分佈。 前述係說明以導電板U產生電場，然熟悉此技術之人士應明白， 可利用平行電極或其他類似者來實施。 本發明已就實施例作詳細說明，然而上述實施例僅為例示性說 明本發明之原㈣及功效，並非祕_本發明。熟知此項技蔽 者可知，不悖離本發明之精神與範疇的各種修正、變更均可實行。 本發明之保護範圍係如所附之申請專利範圍所界定。 【圖式簡單說明】 下列圖式中’並非依照實際尺寸比例繪製，僅為顯示各部分相 關的關係’此外’相同的元件符號表示相同的部分。 圖1為一般離子束能量之分佈圖。 圖2為本發明監視方法實施於習知離子佈植機之實施例示意圖。 圖3為根據圖2之本發明實施例所檢測得出之供應電壓與離子束電 流間之例示曲線圖。 圖4為根據圖2之本發明實施例進一步實施本發明之控制方法所得 之調整後之離子束能量分佈圖。 元件符號說明： 10〜 監視裝置 11〜 導電板 12〜 開孔 14〜 電壓供應器 20〜 離子佈植機 21〜 離子源 22〜 磁性分析器 H:\Barbara\SPEC93040-NANYA.doc 南亞92246(常在) 1240313 23〜支撐 24〜晶圓 25〜電流檢測為 31〜離子束 32〜離子束 33〜離子束El-220eV 'E2-180eV' can now apply a voltage of 220V on the conductive plate 产生 to generate an electric field of different strength to control the number of ions that the ion beam 32 passes through the opening 12. Then use a current detector 25 such as a Faraday cup to measure the current generated by the ion beam 33 passing through the opening 12, so that the relationship between the voltage provided by the voltage supply 14 and the current generated by the ion beam with a set energy can be obtained. . Since the supplied specific voltage corresponds to a specific electric field strength generated on the conductive plate 11, and the specific electric field strength will affect the number of ions having a specific energy passing through the conductive plate 11, the relationship between the voltage and current is reflected as shown in the figure The energy distribution of the ion beam with the set energy shown in 1. According to the conventional example, Lu ′ applies different voltages ranging from 180V to 220V on the conductive plate 11, and the graph of the voltage between the measured voltage supply || 14 and the ion beam current can be shown in FIG. 3. Among them, when the voltage is increased from 180V to 220V, the current amount of the ion beam 33 passing through the conductive plate 11 gradually decreases, which means that the number of ions passing through the conductive plate u decreases. When a voltage of 180V is applied, all of the ions can pass through the openings 12. When the voltage is greater than 2, the area is large. The plutonium separator is trapped, and only a few ions with an energy greater than 200 eV can pass through the opening 12. When a voltage of 220V is applied, no ions can pass through the openings 12. Stomach advancement-Step t: 'Can be used to control the distribution of ion beam energy in implantation machines before the publication of the financial law ^' First 'can adjust the ion implantation machine based on the relationship between the detected voltage and current Ion beam parameters can be implemented, for example, by adjusting the magnetic analyzer 22 of the ion implanter 2 (), and then repeat the above monitoring and adjustment steps until the resulting ion beam energy is H: \ Barbara \ SPEC93040-NANYA. doc South Asia 92246 (usually) 9 1240313 The cloth is taken as expected, which can increase the degree of lavishness / carefulness and reduce the age deviation from ι0% to 50/0. Taking the foregoing example, as shown in FIG. 4, the energy distribution of the adjusted ion beam may be from 195eV to 205eV, or a more compact energy distribution. The foregoing description is that the electric field is generated by the conductive plate U, but those skilled in the art should understand that parallel electrodes or the like can be used for implementation. The present invention has been described in detail with reference to the embodiments. However, the above embodiments are merely illustrative to explain the essence and effect of the present invention, and are not the present invention. Those skilled in the art will recognize that various modifications and changes can be made without departing from the spirit and scope of the invention. The scope of protection of the present invention is defined by the scope of the attached patent application. [Brief description of the drawings] In the following drawings, ‘not drawn according to the actual size ratio, but only to show the relationship between the parts’. In addition, the same element symbols indicate the same parts. Figure 1 shows the energy distribution of a general ion beam. FIG. 2 is a schematic diagram of an embodiment in which the monitoring method of the present invention is implemented in a conventional ion implanter. Fig. 3 is an exemplary curve diagram between a supply voltage and an ion beam current detected according to the embodiment of the present invention shown in Fig. 2. Fig. 4 is an adjusted ion beam energy distribution diagram obtained by further implementing the control method of the present invention according to the embodiment of the present invention shown in Fig. 2. Description of component symbols: 10 ~ monitoring device 11 ~ conductive plate 12 ~ opening 14 ~ voltage supply 20 ~ ion implanter 21 ~ ion source 22 ~ magnetic analyzer H: \ Barbara \ SPEC93040-NANYA.doc 南亚 92246 (常1240313 23 ~ Support 24 ~ Wafer 25 ~ Current detection is 31 ~ Ion beam 32 ~ Ion beam 33 ~ Ion beam
11 H:\Barbara\SPEC93040-NANYA.doc 南亞92246(常在)11 H: \ Barbara \ SPEC93040-NANYA.doc South Asia 92246 (often)