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TW567486B - Rewritable optical information recording medium - Google Patents

Rewritable optical information recording medium Download PDF

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Publication number
TW567486B
TW567486B TW089117154A TW89117154A TW567486B TW 567486 B TW567486 B TW 567486B TW 089117154 A TW089117154 A TW 089117154A TW 89117154 A TW89117154 A TW 89117154A TW 567486 B TW567486 B TW 567486B
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TW
Taiwan
Prior art keywords
layer
recording
thickness
optical information
recording medium
Prior art date
Application number
TW089117154A
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English (en)
Inventor
Guo-Fu Zhou
Original Assignee
Koninkl Philips Electronics Nv
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Publication of TW567486B publication Critical patent/TW567486B/zh

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    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
    • G11B7/00—Recording or reproducing by optical means, e.g. recording using a thermal beam of optical radiation by modifying optical properties or the physical structure, reproducing using an optical beam at lower power by sensing optical properties; Record carriers therefor
    • G11B7/24—Record carriers characterised by shape, structure or physical properties, or by the selection of the material
    • G11B7/241—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material
    • G11B7/242—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of recording layers
    • G11B7/243—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of recording layers comprising inorganic materials only, e.g. ablative layers
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
    • G11B7/00—Recording or reproducing by optical means, e.g. recording using a thermal beam of optical radiation by modifying optical properties or the physical structure, reproducing using an optical beam at lower power by sensing optical properties; Record carriers therefor
    • G11B7/24—Record carriers characterised by shape, structure or physical properties, or by the selection of the material
    • G11B7/241—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material
    • G11B7/242—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of recording layers
    • G11B7/243—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of recording layers comprising inorganic materials only, e.g. ablative layers
    • G11B7/2433—Metals or elements of Groups 13, 14, 15 or 16 of the Periodic Table, e.g. B, Si, Ge, As, Sb, Bi, Se or Te
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
    • G11B7/00—Recording or reproducing by optical means, e.g. recording using a thermal beam of optical radiation by modifying optical properties or the physical structure, reproducing using an optical beam at lower power by sensing optical properties; Record carriers therefor
    • G11B7/004—Recording, reproducing or erasing methods; Read, write or erase circuits therefor
    • G11B7/0045—Recording
    • G11B7/00454—Recording involving phase-change effects
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
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    • G11B7/24—Record carriers characterised by shape, structure or physical properties, or by the selection of the material
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    • G11B7/257—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of layers other than recording layers of layers having properties involved in recording or reproduction, e.g. optical interference layers or sensitising layers or dielectric layers, which are protecting the recording layers
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    • G11B7/24—Record carriers characterised by shape, structure or physical properties, or by the selection of the material
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    • G11B7/241—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material
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    • G11B7/253—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of layers other than recording layers of substrates
    • G11B2007/25302—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of layers other than recording layers of substrates comprising metals
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    • G11B2007/25705—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of layers other than recording layers of layers having properties involved in recording or reproduction, e.g. optical interference layers or sensitising layers or dielectric layers, which are protecting the recording layers consisting essentially of inorganic materials
    • G11B2007/25706—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of layers other than recording layers of layers having properties involved in recording or reproduction, e.g. optical interference layers or sensitising layers or dielectric layers, which are protecting the recording layers consisting essentially of inorganic materials containing transition metal elements (Zn, Fe, Co, Ni, Pt)
    • G—PHYSICS
    • G11—INFORMATION STORAGE
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    • G11B7/24—Record carriers characterised by shape, structure or physical properties, or by the selection of the material
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    • G11B2007/25705—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of layers other than recording layers of layers having properties involved in recording or reproduction, e.g. optical interference layers or sensitising layers or dielectric layers, which are protecting the recording layers consisting essentially of inorganic materials
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    • G11B7/257—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of layers other than recording layers of layers having properties involved in recording or reproduction, e.g. optical interference layers or sensitising layers or dielectric layers, which are protecting the recording layers
    • G11B2007/25705—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of layers other than recording layers of layers having properties involved in recording or reproduction, e.g. optical interference layers or sensitising layers or dielectric layers, which are protecting the recording layers consisting essentially of inorganic materials
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    • G11B7/2534—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material of layers other than recording layers of substrates comprising resins polycarbonates [PC]
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  • Chemical & Material Sciences (AREA)
  • Inorganic Chemistry (AREA)
  • Optical Record Carriers And Manufacture Thereof (AREA)
  • Thermal Transfer Or Thermal Recording In General (AREA)
  • Optical Recording Or Reproduction (AREA)

Description

567486 五、發明說明（1) 發明背景 本發明與一使用雷射光束用於可讀寫之高速記錄之光學 資訊記錄媒體有關，該媒體包括一載有一層堆疊的基底， 該堆疊依順序包括一第一介電層、一含括一相位變化記錄 材質之記錄層，該材質包含Sb和Te，一第二介電層以及一 金屬鏡面層。 本發明亦與在高儲存密度高數據速率應用下使用這一種 光學記錄媒體有關。 基於相位變化原理之數據儲存或光學資訊是引人注目 的，因為它造就了易於與唯讀系統相容之高儲存密度和直 接覆寫（DOW)的可能性。相位變化光學記錄包含在一使用 聚焦之雷射光束之薄結晶膜内形成次微米尺寸之非結晶記 錄標記。在記錄資訊期間，該媒體隨著根據所記錄之資訊 所調變的焦聚之雷射光束移動。因此，冷卻發生於相位變 化記錄層並使非結晶資訊位元形成於該記錄層之外暴區 域，並於非外暴區域維持結晶。經由加熱同一層並且再結 晶而消除所寫入之非結晶標記。該非結晶標記代表數據位 元，可介由該基底以低功率聚焦之雷射光束予以再生。與 結晶記錄層有關之非結晶標記之反射差異產生一經過調變 之雷射光束，接著根據該編碼、記錄之數位資訊經由一偵 測器轉換成一經過調變之光電流。 相位變化光學記錄中最重要的要求之一為高數據速率。 一高數據速率需要具有一高結晶速率之記錄層，亦即一短 結晶時間。為了確保先前所記錄的非結晶標記可在直接覆
1_丨 567486 五、發明說明（2) '—~" --- $ /月間再、’Ό θθ化，該記錄層必須有一適當的結晶時間對應 雷$光束並與媒體之線性速度配合。若結晶速度不夠快而 ^此對應雷射光束並與媒體之線性速度配合，則來自先前 έ己錄之舊數據（非結晶標記）無法在DOW期間予以完全消除 (再結晶）。這會導致高雜訊度。高密度記錄和高數據速率 之應用尤其需要高結晶速率，像是碟狀DVD + RW、DVR_red 與blue ^CD-RW，其中完全消除時間（CET)必須小於約6〇 nS二對每一片120關之光碟具有4.7 GB記錄密度之DVD + RW 而言’使用者數據位元速率須達到33 Mbits/s，且對DVR一 r曰ed之使用者數據位元速率則必須達到35 Mbits/s。對像 疋DVR blue(由一藍色雷射光束所運作之數位視訊記錄）之 類的可重複寫入之相位變化光學記錄系統而言，使用者數 據位元速率必須高於50 Mbits/s。 一種在開放性期訊所述之這種形式之光學資訊媒體已知 由吳國專利案US 5, 876, 822之申請案收錄之。已知的相位 邊化形式之媒體包含一碟狀基底，載有一層堆疊，其連續 性之組成有一第一介電層、一具有相位變化Ge 材”記錄層、一第二介電層和一金屬反射層。這樣二己： 堆豐可視為一種IPIM結構，其中M•表示一反射或鏡面層、工 表不一介層且P表示一相位變化記錄層。該專利揭露出 CET值可藉由記錄材質組成之最佳化予以縮短。包含這種 記錄材質之記錄層之CET值隨著記錄層厚度之增加而減 。、一最短之CET值乃於厚度介於25至35 nm之間取得。實驗 顯不，§氧氣灌入該記錄材質且Sic帽層（cap )應用
567486
種§己錄層可使使用者數據位元速率達 於該堆疊時，這樣一 到40 Mbits/s 〇 本發明之一目的為提供，尤苴9 ，一 ^ 錄之可重複寫入之光學資气媒二疋，、用於高速光學記 DVD-blue，並適用於D〇w(直=窝如D_W、DVD-red 和 小於或等於60 ns。尤其，禅轉復寫）° §己錄層之CET值必須 少需為50 MbitS/s。高速士己錄虹之使用立者數據位元速率至 之媒體之線性速度至少為4。8本文/'指—對應雷射光束 碟的四 為4. 8 m/s，其速率為標準壓縮光
本ίΠΓί:開放性期訊所述之光學資訊媒體而㈣ : f Ϊ 在於該記錄材質由-公式所定義的名 成物所組成，該公式為
Qa I nb S bc T ed (基於原子百分比），其中 其中Q為Ag或Ge ; 2<a<8 0<b<6 55<c<80 1 5 < d < 3 0 ; a + b + c + d = 1 〇 〇，且 吕亥5己錄層之厚度為5至15 ηπι。 與基於Ge-Sb-Te之記錄層相比較，基於Ag_In_Sb_Te或 f Ge-In-Sb-Te之記錄層顯示CET值隨著厚度遞減而遞減。最 短的CET值出現在厚度小於15 nm時，該值低於60 ns，或 甚至低於40 ns。若合成物之a-、b-、c-或d-值在所要求 之範圍之外，即使厚度為其CET值亦不能比60s還短。
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基於實際考量’記錄層的厚度至少為5 nm。·最佳結果可在 圮錄層厚度介於7和1 4 nm之間達成。 歐洲專利案EP-B-569664揭露一種光學資訊記錄媒體， ^有一記錄材質為（AgSbTe2)Q43(InSbQ77)G57之記錄層，可 寫為八忌15.71112()981)319丁6315。較佳層之厚度乃介於2 0至3 0 0 之間。該專利規格内沒有CET值或使用者數據位元速率 之指示 〇 更好地’記錄材質為一Ge-In-Sb-Te合金（在上述公式裏 Q — Ge) ’因為該材質的熱穩定性比Ag-In-Sb-Te材質還好。
材質的可循環性（cyclabi H ty)在使用5〇〇〇〇個循環時可 表示，可循環性為在5〇〇〇〇個循環與〇個循環之後 的光學對比Μ之相對變化。M定義為（Rh —Rl)/Rh，其中心和匕 為結晶與非結晶記錄材質之反射。在每一個循環裏，所寫 入的非結晶標記於寫入新的非結晶標記時乃藉由一雷射光 束之加熱處理以再結晶的方法消除之。理想旳Ms_q/m。值為 1 · 〇，亦即光學對比在循環之後維持不變。
第一介電層，亦即鄰接伺服執之層，且一般因而介於基 底與相位變化記錄層，之厚度對CET和可循環性之值 ^oogo/Mq沒有顯著的影響。因此，為了其它，例如光學，理 由改變該層厚度而不影響堆疊的熱特性是可能的。該層使 記錄層免於潮溼且使基底免於熱損壞，並且使光學對比Μ 最佳化。就顫動（j i tter)觀點而言，該第一介電層之厚度 至少需為70 nm。例如就光學對比的角度來看，該層的厚 度最好小於5 0 0 nm。
567486 五、發明說明（5) ' " f 一介電層，亦即介於記錄層與金屬鏡面層之間的層， 之奉1佳尽度範圍為介於15至50 nm之間，最好是介於2〇至 40 nm之間。若該層太薄，對介於記錄層和金屬鏡面層之 間的熱絕緣會有負面的影響。結果是，必須提高記錄層之 冷々卩速率’因而造成慢速的結晶過程和粗劣的可循環性。 "卩速率會著第二介電層所遞增的厚而遞減。
— CET值對介於20至3 0 0 nm之間的金屬鏡面層之厚度並不 敏$ °但是可循環性於金屬鏡面層比60 nm還薄時會有負 面衫響’因為冷卻速率在這種厚度下太慢了。當該金屬鏡 面層為20 〇nm或更厚，可循環性會進一步衰減，且因為遞 曰、”、、傳^而必須有南記錄和消除電源。該金屬鏡面層的 厚度最好介於80和150 nm之間。 第一和第二介電層可由ZnS和S i 02之混合物，例如 (ZnS)8Q(Si〇2)2Q，製成。或者是例如Si〇2、Ti〇2、ZnS、
Si3N4、A1N及Ta205。更好地，使用一碳化物，如SiC、wc、 TaC、ZrC或TiC。這些材質提供比ZnS —Si〇2混合物更高的 結晶速率和更好的可循環性。 對金屬鏡面層而言，可使用如Al、Ti、Au、Ni、Cu、
Ag Kh Pt、Pd、Cr、Μη、Mo、W.和Ta之類的金屬以及這 些金屬的合金。適用的合金例子為Am、AlCr*A丨Ta。 反射層和，I電層兩者可藉由氣相沉積法或錢鑛法製作。 資訊媒f之基底至少可被雷射波長所穿透，其組成為， 例如’多碳酸鹽、甲基丙稀酸_聚合物（pMMA)、非結晶多 稀烴或玻璃。纟-般的例子裏，該基底為碟狀且其直徑為
567486 —— 五、發明說明（6) ""--- 120隨而其厚度為oj、（^或^ _。使用〇 6随或12 mm 底時，可在該基底上舖層，起自第一介電層、記錄 層專等。Μ射光束經由基底之進入面（entrance “Μ)進 入堆豐。亦可以反向順序（反向的薄膜相位變化堆疊）舖設 基底上的堆疊層，亦即起自金屬鏡面層、第二介電層、相 位變化層等等。接著在最後之介電層（現在為該第一0介電 層）上舖設上述具有厚度為^ mm (1〇〇#m)的材質中的其 中之一光學品質透明層或片。該雷射光束經由 入面進入該堆疊。 θ 再者，基底可以是一人造樹脂軟性磁帶，例如，由有一 5酯膜所做成。“匕，一光學磁帶可用於一光學磁帶記錄 益’例如，基於一快速旋轉多邊形。在這種裝置裏，反 之雷射光束橫越磁帶表面進行橫向掃描。 j錄層表面上之碟狀基底之表面最好舖設一可作為光 I I 2伺服軌。該伺服軌通f由—螺旋狀之溝槽所構成並 擇模子或擠壓期間以模子形成於基底。胃溝槽可選 例如，-丙烯酸爾昭e c =形成’ 設於美庥μ 、、、更化（light-cured)層，分別舖 心之:錄裏，一溝槽有-例如 认之線距及一 0.5 //m之寬度。 可選擇性地，堆疊的最外芦茲± 彳里#麻y t， 多（甲a、二泣撕„ 取r層错由一保4層，例如UV光照 夕匕甲^丙烯酸，與外在環境隔離。 向密度記錄及消除可藉由te ^ & 短（红# 5 @ i由短波長雷射，例如675 nm或更 、、、·工先至藍光）之波長，來達成。
苐10頁 567486 五、發明說明（7) 相位變化記錄層可藉由適當標的（suitable target)氣 相沉積法或丨賤鍵法舖设於基底上。此沉積層為非結晶並具 有低量反射。為了構成一具有高量反射之適合的記錄層， 該層首先必須完全結晶’相當於初始化。為達此目的，該 記錄層可在一火爐内加熱至一高於記錄材質之結晶溫度之 溫度，例如1 8 0 °C，若使用人造樹脂基底，如多碳酸脂， 該記錄層可選擇性地藉由足量電源之雷射光束予以加熱。 這可實現於例如一記錄器，其中雷射光束掃描移動之記錄 層。該非結晶層接著局部地加熱至記錄層之結晶溫度，使
基底避免遭受不利的熱負荷。 若有必要，一額外的薄金層M’可插入基底與第一介電層 之間，因而形成一所謂的Μ ’ I P IΜ結構。雖然該結構變得更 為複雜’附加的金屬層增加記錄層的冷卻速率以及光學對 比Μ 。 實際上，更短的CET值可以ΙΙ + ΡΙ+ΙΜ堆疊取得，其中！、Ρ 和Μ的意義如上所述，而1+為一碳化物層。在堆疊裏，記 ，層Ρ乃夾於兩碳化物層1+之間。第一和第二碳化物層之 =化物最好為SiC、ZrC、TaC、TiC和WC其中之一，其包含 :'==且：佳的可循環性'SiC因其光學、機械和熱 寺丨生而為最佳材質；此外，其價格也相對較低。 化f 一和第亡碳化物層之厚度最好介於2和8⑽之間。碳 迦，η鬲的熱傳導性於厚度較小時對堆疊只有-點影 曰因而有助於該堆疊的熱設計。 向密度凸起凹槽記錄之特別有用之處在於堆疊内所附加
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的光吸收層A。 晶狀態（Ac)之n 1加該光吸收層A使得非結晶狀態（Aa)和鈇 ^ ^ ^ ^ ^ ^ θ49 ^ ^ ^ ^ ^ 零，或最好θ λ ，、 Ac和Aa之間的差，、必須趨近於 ^ ?> - Aa。 δ亥光吸收岸a + 最好是在〇.6宋]貝有一介於〇·5至20之間的n/k比值， 適當平衡。w t之間。這些值給予光吸收和傳輸之間的 Pt、c〇、N . /疋這些條件之材質的例子為Mo、W、Pd、
Ge、InP和Ul、Ta、Cr、T"〇Hf之中的金屬以及邮、 價格便宜曰a中的半導體材質。最好是Si與Ge，因為苴 I 容易應用。 的厚ίΐ:,收和傳輸之間取得-適當的平衡，光吸收層 則更二、，疋介於2到2 0 0 nm之間’介於10到100 nm之間 約 ’並且視所選擇之材質之n/ k比值而定。S i的厚度 、、、75 nm ’ Mo的厚度約為35 nm，Ge的厚度約為55 nm。 +附加一光吸收層A會產生堆疊架構ΙρΐΑΙΜ， π + ρι + ΑΜ， ^Ι + ΡΙ+ΙΑΜ或I Ι + ΡΙ + ΑΙΜ，中I， Ι+，ρ和μ之意義如上所述。 表好疋在堆¾:内於光吸收層和第二碳化物層之間設置一第 二介電層。此一第三介電層丨3可用於使堆疊的熱特性最佳 化’並避免第二碳化物層與光吸收層之間混合。此一堆疊 的架構為：ΙΓΡΙΜ3ΑΙΜ。 且 本發明將藉由範例性具體實施例並參考附圖予以詳细說 明，其中 、ϋ 圖1為一根據本發明之光學資訊媒體之剖面圖， 圖2表示根據本發明使用Ag—In-Sb-Te記錄材質之記錄
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層之CET(以奈秒為單 係， 位）和厚度d (以奈米 4單位）之間的關 圖3表不根據本發明使用兩種不同的 A和B)和兩種不T g^n〜Sb-Te(曲線 η里不同的Ge-In-Sb-Te(曲蜱r^n、 錄層之CET(以+ /泉矛D)記錄材質之記 關係，以& ^為早位）和厚度d(以奈米為單位）之間的 ”表示非根據本發明而使用Ag_in_s 吕己錄層之CET(以夺秒A罝办u^ e σ己錄材貝之 的關係。 不心為早位)和厚度d (以奈米為單位)之間 麗例性具體管施例1 圖：：根據本發明之一光學資訊光碟之剖面圖之一部 伤。參考編號1表示一直徑為12〇 曰痄念丛 ^ ^ ^ # 一且仫局1ZU mm且厚度為1.2 mm之玻 离碟狀基底。邊基底1配有一如下結構之IpiM堆疊： -厚度為 70 nni 之（ZnS)8(](Si02)2()介電層 2 ;且 -厚度為d 之Ag5 GIn5 5Sb65 QTe24 5 記錄層 3 ; -厚度為 25 nm 之（ZnS)8Q(Si02)2Q 介電層 4 ; -厚度為100 nm之A 1金屬鏡面層5。 所有層皆由濺鍍法形成。記錄層3之初始結晶狀態乃藉 由將近沉積（as-deposited)非結晶合金注入（anneal) 一記 錄器而成，其中該記錄層乃藉由一連續性雷射光束加熱至 其結晶溫度之上。 一用於記錄、再生和消除資訊之雷射光束經由基底丨射 入記錄層3。該光束在圖不以箭號6表示，。非結晶標記以電 源匕=1.25 Pm(P，熔化門檻電源）且持續期間為1〇〇 ns之單
第13頁 567486 五、發明說明（10) 雷射脈衝寫入。消去電源為p / 2。 =質之CET(以奈秒為單；)(即完 d的圖2。由圖2可以清楚地看讓隨著 還短。 值在圮錄層比1 5 nm薄時變得比6〇 ns 包張圖裏；1CET值（以▲標示）來自一厚度為12 nm且 二㈤記錄材質結構II+PI+IMi記錄層，其中ι+為一厚 ;為5 n—m:SiC層。於此堆疊中記錄層p夾在兩碳化層”之 另-層之厚度和材質與上述相同。明顯地，c 上述之一 IPIM堆疊還短。 範例性具體眚施例？ 重複範例性具體實施例！，使用一具有A 合成物之記錄層3。圖3之曲線A表示CET對於記4;;.丄 之依存性。目3清楚地表示當厚度d小於或又 CET 小於60 ns。 ^ 範例性具體實施例2 重複範例性具體實施例！，使用一具有Ag3eIn sb 合成物之記錄層3。圖3之曲線B泰示CET對於記3錄層5厚=2 之依存性。圖3清楚地表示當厚度d小於或等於丨5 CET小於42 ns。 ' 守 f例性具體實施例4 重複範例性具體實施例1，使用一具有.6In^Sb 合成物之記錄層3。圖3之曲線C表示CET對於記^彔層^
第14頁
567486 五、發明說明（11) β楚地表示當厚度d小於或等於1 5 nm時 之依存性。圖 CET 小於55 ns 用這種記錄材質_、生 之記錄層之記錄媒pr具有厚度為12 nm (CET為44 ns) 極體，記錄密度可達^由一波長為405 nm之藍色雷射二 性具體f旅^^ 重複範例性具體實施m，使用 合成物之記錄層3。m q η φ 一 ^ 5 lln2-66b73-2lei91 夕β六从 mo 圖3之曲線D表示CET對於記錄層厚度d 之依存性。圖3渣袪从主-水庙十， 』日卞又u CET小於45 ns。連地表不虽厚度d小於或等於15 nm時 比較性範例ULAj康本發明、 重複範例性具體實施例1 ’使用一具有 ΐτ^ΐ1^3.3合成物之記錄層3。在此合成物中，1η ^ ^超出申請專利範圍。圖4表示CET對於記錄声 厚度d之依存性。圖4清 ==: 層之CET亦不會變的比6。ns還短。旱度為8㈣…錄 根據本發明提出一種可重葙靖 ^ ^ t ^ ^ ^ ^ j直複項寫之先學賢訊記錄媒體， 二用,直接覆寫及高速記錄，如DyjHRw、” DVK-blue 〇
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Claims (1)

  1. 567486 _案號 89117154 /> 年 f 月< 六、申請專利範圍 1. 一種光學資訊記錄媒體，用於以雷射光束可重複讀寫 之高速記錄.，該媒體包含一載有一層堆疊之基底，該堆疊 依序包含一第一介電層’一包含由Sb和Te組成之相位變化 記錄材質之記錄層，一第二介電層以及一金屬鏡面層，其 特徵為該記錄材質之組成乃一由公式所定義的合成物 QaInbSbcTed (依原子百分比），其中 Q為Ag或Ge ; 2 <a < 8 0<b<6 5 5 < c < 8 Ο 15 < d < 3 Ο ; a + b + c + d = 100，且 該記錄層具有5至15 nm之厚度。 2. 如申請專利範圍第1項之光學資訊記錄媒體，其特徵 為Q是G 6。 3. 如申請專利範圍第1項之光學資訊記錄媒體，其特徵 為該記錄層之厚度介於7到1 4 n m之間。 4. 如申請專利範圍第1項之光學資訊記錄媒體，其特徵 為 2<a<6 2<b<6 6 Ο < c < 8 Ο 15 < d < 2 5 ; a +b +c + d = 1 Ο Ο ο 5 .如申請專利範圍第1項之光學資訊記錄媒體，其特徵 為該記錄層乃夾於兩碳化物層之間，兩者皆具有2至8 nm
    O:\66\66002-920924.ptc 第17頁 567486 _案號89117154 年f月 <日 修正_ 六、申請專利範圍 之厚度。 6. 如申請.專利範圍第1項之光學資訊記錄媒體，其特徵 為該堆疊包含一光吸收層，其由一物質及半導體物質所製 成，而該物質是選自由Mo、W、Pd、Pt、CO、Ni、Mn、 Ta、Cr、Ti及Hf所組成之群，該半導體物質選自由PbS、 Ge、InP及Si所組成之群，其中該光吸收層之厚度介於2至 2 0 0 n m之間。 7. 如申請專利範圍第1 - 6項中任一項之光學資訊記錄媒 體，其係用於高速記錄，其中介於雷射光束與媒體之間的 相對速度至少為4.8 m/s。
    O:\66\66002-920924.ptc 第18頁
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US6638594B1 (en) 2003-10-28
CN1320260A (zh) 2001-10-31
CN1185642C (zh) 2005-01-19
WO2001013370A1 (en) 2001-02-22
EP1131819A1 (en) 2001-09-12
KR20010080202A (ko) 2001-08-22
KR100753968B1 (ko) 2007-08-31

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