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TW373235B - Method for fabricating a semiconductor device using lateral gettering - Google Patents

Method for fabricating a semiconductor device using lateral gettering

Info

Publication number
TW373235B
TW373235B TW086113689A TW86113689A TW373235B TW 373235 B TW373235 B TW 373235B TW 086113689 A TW086113689 A TW 086113689A TW 86113689 A TW86113689 A TW 86113689A TW 373235 B TW373235 B TW 373235B
Authority
TW
Taiwan
Prior art keywords
layer
gettering
semiconductor
semiconductor device
section
Prior art date
Application number
TW086113689A
Other languages
English (en)
Inventor
Stella Q Hong
Thomas A Wetteroth
Syd Robert Wilson
Original Assignee
Freescale Semiconductor Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Freescale Semiconductor Inc filed Critical Freescale Semiconductor Inc
Application granted granted Critical
Publication of TW373235B publication Critical patent/TW373235B/zh

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H10D30/031—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT]
    • H10D30/0321—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT] comprising silicon, e.g. amorphous silicon or polysilicon
    • H10D30/0323—Manufacture or treatment of FETs having insulated gates [IGFET] of thin-film transistors [TFT] comprising silicon, e.g. amorphous silicon or polysilicon comprising monocrystalline silicon
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/322—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to modify their internal properties, e.g. to produce internal imperfections
    • H01L21/3221—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to modify their internal properties, e.g. to produce internal imperfections of silicon bodies, e.g. for gettering
    • H01L21/3226—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to modify their internal properties, e.g. to produce internal imperfections of silicon bodies, e.g. for gettering of silicon on insulator
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6729—Thin-film transistors [TFT] characterised by the electrodes
    • H10D30/6737—Thin-film transistors [TFT] characterised by the electrodes characterised by the electrode materials
    • H10D30/6739—Conductor-insulator-semiconductor electrodes

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Thin Film Transistor (AREA)
TW086113689A 1996-10-31 1997-09-20 Method for fabricating a semiconductor device using lateral gettering TW373235B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US08/740,580 US5753560A (en) 1996-10-31 1996-10-31 Method for fabricating a semiconductor device using lateral gettering

Publications (1)

Publication Number Publication Date
TW373235B true TW373235B (en) 1999-11-01

Family

ID=24977163

Family Applications (1)

Application Number Title Priority Date Filing Date
TW086113689A TW373235B (en) 1996-10-31 1997-09-20 Method for fabricating a semiconductor device using lateral gettering

Country Status (5)

Country Link
US (1) US5753560A (zh)
EP (1) EP0840367A3 (zh)
JP (1) JPH10135226A (zh)
KR (1) KR100326694B1 (zh)
TW (1) TW373235B (zh)

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US6890807B2 (en) * 2003-05-06 2005-05-10 Intel Corporation Method for making a semiconductor device having a metal gate electrode
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US7160767B2 (en) * 2003-12-18 2007-01-09 Intel Corporation Method for making a semiconductor device that includes a metal gate electrode
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US7811900B2 (en) * 2006-09-08 2010-10-12 Silicon Genesis Corporation Method and structure for fabricating solar cells using a thick layer transfer process
JP2008108915A (ja) * 2006-10-25 2008-05-08 Denso Corp 半導体装置の製造方法
JP2010508676A (ja) * 2006-11-02 2010-03-18 アイメック 半導体デバイス層からの不純物の除去
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US8017998B1 (en) * 2009-09-08 2011-09-13 T-Ram Semiconductor, Inc. Gettering contaminants for integrated circuits formed on a silicon-on-insulator structure
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Also Published As

Publication number Publication date
EP0840367A2 (en) 1998-05-06
US5753560A (en) 1998-05-19
JPH10135226A (ja) 1998-05-22
EP0840367A3 (en) 1998-09-30
KR19980033385A (ko) 1998-07-25
KR100326694B1 (ko) 2002-08-08

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Legal Events

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MM4A Annulment or lapse of patent due to non-payment of fees