Classifications

• • H—ELECTRICITY
  • H01—ELECTRIC ELEMENTS
  • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
  • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
  • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
  • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
  • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
  • H01L21/26—Bombardment with radiation
  • H01L21/263—Bombardment with radiation with high-energy radiation
  • H01L21/265—Bombardment with radiation with high-energy radiation producing ion implantation
  • H01L21/266—Bombardment with radiation with high-energy radiation producing ion implantation using masks
• • H—ELECTRICITY
  • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
  • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
  • H10D10/00—Bipolar junction transistors [BJT]
  • H10D10/01—Manufacture or treatment
  • H10D10/051—Manufacture or treatment of vertical BJTs
• • H—ELECTRICITY
  • H01—ELECTRIC ELEMENTS
  • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
  • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
  • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
  • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
  • H01L21/033—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers
  • H01L21/0334—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers characterised by their size, orientation, disposition, behaviour, shape, in horizontal or vertical plane
  • H01L21/0338—Process specially adapted to improve the resolution of the mask
• • H—ELECTRICITY
  • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
  • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
  • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
  • H10D84/01—Manufacture or treatment
  • H10D84/0112—Integrating together multiple components covered by H10D8/00, H10D10/00 or H10D18/00, e.g. integrating multiple BJTs
• • H—ELECTRICITY
  • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
  • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
  • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
  • H10D84/01—Manufacture or treatment
  • H10D84/02—Manufacture or treatment characterised by using material-based technologies
  • H10D84/03—Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology
  • H10D84/038—Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology using silicon technology, e.g. SiGe

Landscapes

• Engineering & Computer Science (AREA)
• Physics & Mathematics (AREA)
• Manufacturing & Machinery (AREA)
• Condensed Matter Physics & Semiconductors (AREA)
• General Physics & Mathematics (AREA)
• Computer Hardware Design (AREA)
• Microelectronics & Electronic Packaging (AREA)
• Power Engineering (AREA)
• Inorganic Chemistry (AREA)
• Chemical & Material Sciences (AREA)
• High Energy & Nuclear Physics (AREA)
• Health & Medical Sciences (AREA)
• Toxicology (AREA)
• Bipolar Transistors (AREA)

Applications Claiming Priority (1)

Publications (1)

Family

ID=20406016

Family Applications (1)

Country Status (10)

Cited By (3)

Families Citing this family (4)

Family Cites Families (20)

• 1997
  • 1997-03-04 SE SE9700773A patent/SE519628C2/sv not_active IP Right Cessation
  • 1997-03-24 TW TW086103707A patent/TW364161B/zh active
• 1998
  • 1998-03-03 US US09/033,714 patent/US6140194A/en not_active Expired - Fee Related
  • 1998-03-04 CA CA002283396A patent/CA2283396A1/en not_active Abandoned
  • 1998-03-04 JP JP53844898A patent/JP2001513945A/ja active Pending
  • 1998-03-04 AU AU66443/98A patent/AU6644398A/en not_active Abandoned
  • 1998-03-04 CN CN98802982A patent/CN1249848A/zh active Pending
  • 1998-03-04 WO PCT/SE1998/000388 patent/WO1998039797A1/en not_active Ceased
  • 1998-03-04 EP EP98908408A patent/EP0966757A1/en not_active Withdrawn
  • 1998-03-04 KR KR1019997007774A patent/KR20000075706A/ko not_active Ceased
• 1999
  • 1999-01-26 US US09/236,619 patent/US6153919A/en not_active Expired - Fee Related

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