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TW359830B - Apparatus for saving power consumption in semiconductor memory devices - Google Patents

Apparatus for saving power consumption in semiconductor memory devices

Info

Publication number
TW359830B
TW359830B TW086117088A TW86117088A TW359830B TW 359830 B TW359830 B TW 359830B TW 086117088 A TW086117088 A TW 086117088A TW 86117088 A TW86117088 A TW 86117088A TW 359830 B TW359830 B TW 359830B
Authority
TW
Taiwan
Prior art keywords
power consumption
latch
semiconductor memory
memory devices
saving power
Prior art date
Application number
TW086117088A
Other languages
Chinese (zh)
Inventor
Kee-Woo Park
Jong-Woo Kim
Original Assignee
Hyundai Electronics Ind
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hyundai Electronics Ind filed Critical Hyundai Electronics Ind
Application granted granted Critical
Publication of TW359830B publication Critical patent/TW359830B/en

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
    • G11C7/10—Input/output [I/O] data interface arrangements, e.g. I/O data control circuits, I/O data buffers
    • G11C7/1078—Data input circuits, e.g. write amplifiers, data input buffers, data input registers, data input level conversion circuits
    • G11C7/1093—Input synchronization
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
    • G11C11/4063—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing
    • G11C11/407—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing for memory cells of the field-effect type
    • G11C11/4076—Timing circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
    • G11C7/10—Input/output [I/O] data interface arrangements, e.g. I/O data control circuits, I/O data buffers
    • G11C7/1078—Data input circuits, e.g. write amplifiers, data input buffers, data input registers, data input level conversion circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
    • G11C7/22—Read-write [R-W] timing or clocking circuits; Read-write [R-W] control signal generators or management 

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Dram (AREA)

Abstract

A power consumption saving apparatus for semiconductor memory devices such as DRAM's, which is configured to preferentially latch a clock signal and a chip selection signal over other input command signals so that latch circuits for latching the input command signals are controlled in accordance with the clock signal and chip selection signal, thereby saving power consumption occurring in input latches not selected. The apparatus includes an input latch as a latch control circuit for preferentially latching a clock signal and a chip selection signal and outputting the latched signals as a control signal for controlling latch circuits.
TW086117088A 1996-12-31 1997-11-15 Apparatus for saving power consumption in semiconductor memory devices TW359830B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1019960080217A KR100231605B1 (en) 1996-12-31 1996-12-31 Device for preventing power consumption of semiconductor memory devices

Publications (1)

Publication Number Publication Date
TW359830B true TW359830B (en) 1999-06-01

Family

ID=19493472

Family Applications (1)

Application Number Title Priority Date Filing Date
TW086117088A TW359830B (en) 1996-12-31 1997-11-15 Apparatus for saving power consumption in semiconductor memory devices

Country Status (3)

Country Link
US (1) US5926435A (en)
KR (1) KR100231605B1 (en)
TW (1) TW359830B (en)

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KR100400313B1 (en) * 2001-06-20 2003-10-01 주식회사 하이닉스반도체 Data I/O circuit of semiconductor memory device
US6667929B1 (en) 2002-06-14 2003-12-23 International Business Machines Corporation Power governor for dynamic RAM
US7167401B2 (en) * 2005-02-10 2007-01-23 Micron Technology, Inc. Low power chip select (CS) latency option
US8438328B2 (en) * 2008-02-21 2013-05-07 Google Inc. Emulation of abstracted DIMMs using abstracted DRAMs
US9507739B2 (en) 2005-06-24 2016-11-29 Google Inc. Configurable memory circuit system and method
US8077535B2 (en) 2006-07-31 2011-12-13 Google Inc. Memory refresh apparatus and method
US8327104B2 (en) 2006-07-31 2012-12-04 Google Inc. Adjusting the timing of signals associated with a memory system
US9542352B2 (en) 2006-02-09 2017-01-10 Google Inc. System and method for reducing command scheduling constraints of memory circuits
US8796830B1 (en) 2006-09-01 2014-08-05 Google Inc. Stackable low-profile lead frame package
US8359187B2 (en) 2005-06-24 2013-01-22 Google Inc. Simulating a different number of memory circuit devices
US8335894B1 (en) 2008-07-25 2012-12-18 Google Inc. Configurable memory system with interface circuit
US7590796B2 (en) 2006-07-31 2009-09-15 Metaram, Inc. System and method for power management in memory systems
US20080028136A1 (en) 2006-07-31 2008-01-31 Schakel Keith R Method and apparatus for refresh management of memory modules
US8060774B2 (en) 2005-06-24 2011-11-15 Google Inc. Memory systems and memory modules
US8055833B2 (en) 2006-10-05 2011-11-08 Google Inc. System and method for increasing capacity, performance, and flexibility of flash storage
US8081474B1 (en) 2007-12-18 2011-12-20 Google Inc. Embossed heat spreader
US8386722B1 (en) 2008-06-23 2013-02-26 Google Inc. Stacked DIMM memory interface
US8111566B1 (en) 2007-11-16 2012-02-07 Google, Inc. Optimal channel design for memory devices for providing a high-speed memory interface
US7386656B2 (en) 2006-07-31 2008-06-10 Metaram, Inc. Interface circuit system and method for performing power management operations in conjunction with only a portion of a memory circuit
US7472220B2 (en) 2006-07-31 2008-12-30 Metaram, Inc. Interface circuit system and method for performing power management operations utilizing power management signals
US20080082763A1 (en) 2006-10-02 2008-04-03 Metaram, Inc. Apparatus and method for power management of memory circuits by a system or component thereof
US8089795B2 (en) 2006-02-09 2012-01-03 Google Inc. Memory module with memory stack and interface with enhanced capabilities
US10013371B2 (en) 2005-06-24 2018-07-03 Google Llc Configurable memory circuit system and method
WO2007002324A2 (en) 2005-06-24 2007-01-04 Metaram, Inc. An integrated memory core and memory interface circuit
US7580312B2 (en) 2006-07-31 2009-08-25 Metaram, Inc. Power saving system and method for use with a plurality of memory circuits
US7392338B2 (en) 2006-07-31 2008-06-24 Metaram, Inc. Interface circuit system and method for autonomously performing power management operations in conjunction with a plurality of memory circuits
US8130560B1 (en) 2006-11-13 2012-03-06 Google Inc. Multi-rank partial width memory modules
US7609567B2 (en) 2005-06-24 2009-10-27 Metaram, Inc. System and method for simulating an aspect of a memory circuit
US8397013B1 (en) 2006-10-05 2013-03-12 Google Inc. Hybrid memory module
US8090897B2 (en) 2006-07-31 2012-01-03 Google Inc. System and method for simulating an aspect of a memory circuit
US8244971B2 (en) 2006-07-31 2012-08-14 Google Inc. Memory circuit system and method
US8041881B2 (en) 2006-07-31 2011-10-18 Google Inc. Memory device with emulated characteristics
GB2444663B (en) 2005-09-02 2011-12-07 Metaram Inc Methods and apparatus of stacking drams
US9632929B2 (en) 2006-02-09 2017-04-25 Google Inc. Translating an address associated with a command communicated between a system and memory circuits
US7724589B2 (en) 2006-07-31 2010-05-25 Google Inc. System and method for delaying a signal communicated from a system to at least one of a plurality of memory circuits
US8209479B2 (en) 2007-07-18 2012-06-26 Google Inc. Memory circuit system and method
US8080874B1 (en) 2007-09-14 2011-12-20 Google Inc. Providing additional space between an integrated circuit and a circuit board for positioning a component therebetween
DE202010017690U1 (en) 2009-06-09 2012-05-29 Google, Inc. Programming dimming terminating resistor values
KR102806677B1 (en) 2021-09-10 2025-05-13 창신 메모리 테크놀로지즈 아이엔씨 Signal shielding circuits and semiconductor memories

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JP2585602B2 (en) * 1987-06-10 1997-02-26 株式会社日立製作所 Semiconductor storage device
JPH03230395A (en) * 1990-02-02 1991-10-14 Hitachi Ltd Static type ram
US5379261A (en) * 1993-03-26 1995-01-03 United Memories, Inc. Method and circuit for improved timing and noise margin in a DRAM
US5745429A (en) * 1995-08-28 1998-04-28 Micron Technology, Inc. Memory having and method for providing a reduced access time
US5537353A (en) * 1995-08-31 1996-07-16 Cirrus Logic, Inc. Low pin count-wide memory devices and systems and methods using the same
KR100209364B1 (en) * 1995-10-27 1999-07-15 김영환 Memory apparatus

Also Published As

Publication number Publication date
KR100231605B1 (en) 1999-11-15
US5926435A (en) 1999-07-20
KR19980060850A (en) 1998-10-07

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Legal Events

Date Code Title Description
MM4A Annulment or lapse of patent due to non-payment of fees