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TW329045B - Temperature control circuit and its semiconductor integrated circuit - Google Patents

Temperature control circuit and its semiconductor integrated circuit

Info

Publication number
TW329045B
TW329045B TW086108889A TW86108889A TW329045B TW 329045 B TW329045 B TW 329045B TW 086108889 A TW086108889 A TW 086108889A TW 86108889 A TW86108889 A TW 86108889A TW 329045 B TW329045 B TW 329045B
Authority
TW
Taiwan
Prior art keywords
temperature
control circuit
circuit
semiconductor integrated
temperature control
Prior art date
Application number
TW086108889A
Other languages
Chinese (zh)
Inventor
Kenshi Kobayashi
Original Assignee
Toshiba Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Co Ltd filed Critical Toshiba Co Ltd
Application granted granted Critical
Publication of TW329045B publication Critical patent/TW329045B/en

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/80—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs
    • H10D84/82—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components
    • H10D84/83—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs of only field-effect components of only insulated-gate FETs [IGFET]
    • H10D84/85—Complementary IGFETs, e.g. CMOS
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01K—MEASURING TEMPERATURE; MEASURING QUANTITY OF HEAT; THERMALLY-SENSITIVE ELEMENTS NOT OTHERWISE PROVIDED FOR
    • G01K7/00—Measuring temperature based on the use of electric or magnetic elements directly sensitive to heat ; Power supply therefor, e.g. using thermoelectric elements
    • G01K7/01—Measuring temperature based on the use of electric or magnetic elements directly sensitive to heat ; Power supply therefor, e.g. using thermoelectric elements using semiconducting elements having PN junctions
    • G—PHYSICS
    • G05—CONTROLLING; REGULATING
    • G05D—SYSTEMS FOR CONTROLLING OR REGULATING NON-ELECTRIC VARIABLES
    • G05D23/00—Control of temperature
    • G05D23/19—Control of temperature characterised by the use of electric means
    • G05D23/20—Control of temperature characterised by the use of electric means with sensing elements having variation of electric or magnetic properties with change of temperature
    • G05D23/24—Control of temperature characterised by the use of electric means with sensing elements having variation of electric or magnetic properties with change of temperature the sensing element having a resistance varying with temperature, e.g. a thermistor
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H10D84/0123—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs
    • H10D84/0126—Integrating together multiple components covered by H10D12/00 or H10D30/00, e.g. integrating multiple IGBTs the components including insulated gates, e.g. IGFETs

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Automation & Control Theory (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Control Of Temperature (AREA)

Abstract

The present invention is a temperature control circuit, more particularly relates to a temperature control circuit having CMOS which inhibits chip temperature due to circuit operational speed and environmental changes. The present object is to provide a temperature control circuit and its semiconductor integrated circuit, which can quickly and steadily control chip temperature without additional cooling device when environment changes and circuit operational speed changes, can control chip temperature in the shortest period of time without any false operation. The temperature control circuit includes temperature detector 10, 40, 80 having varied temperature-resistance characteristics components, and output voltage generated by the temperature detector. The output voltage controls the control circuits 20, 50, 70 in which the temperature in controlled by the heat dissipation of the temperature detector output control in the control circuit. The temperature control circuit can be made in a substrate so that it is a semiconductor integrated circuit having good temperature characteristics.
TW086108889A 1996-06-27 1997-06-25 Temperature control circuit and its semiconductor integrated circuit TW329045B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP8167360A JPH1011157A (en) 1996-06-27 1996-06-27 Temperature control circuit and semiconductor integrated circuit

Publications (1)

Publication Number Publication Date
TW329045B true TW329045B (en) 1998-04-01

Family

ID=15848281

Family Applications (1)

Application Number Title Priority Date Filing Date
TW086108889A TW329045B (en) 1996-06-27 1997-06-25 Temperature control circuit and its semiconductor integrated circuit

Country Status (3)

Country Link
JP (1) JPH1011157A (en)
KR (1) KR980006246A (en)
TW (1) TW329045B (en)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100618876B1 (en) 2004-11-10 2006-09-04 삼성전자주식회사 Sequential tracking temperature sensor with hysteresis characteristics and its temperature sensing method
JP2009058438A (en) 2007-08-31 2009-03-19 Toshiba Corp Temperature detection circuit
CN103176489B (en) * 2013-02-06 2015-09-30 南京千韵电子科技有限公司 Chip internal temperature-controlled process and device and the experiment instrument based on this method

Also Published As

Publication number Publication date
KR980006246A (en) 1998-03-30
JPH1011157A (en) 1998-01-16

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Legal Events

Date Code Title Description
MM4A Annulment or lapse of patent due to non-payment of fees