[go: up one dir, main page]

TW326099B - Semiconductor device and the process of manufacturing the same - Google Patents

Semiconductor device and the process of manufacturing the same

Info

Publication number
TW326099B
TW326099B TW085105149A TW85105149A TW326099B TW 326099 B TW326099 B TW 326099B TW 085105149 A TW085105149 A TW 085105149A TW 85105149 A TW85105149 A TW 85105149A TW 326099 B TW326099 B TW 326099B
Authority
TW
Taiwan
Prior art keywords
oxidized membrane
film
silicon substrate
specified area
oxidized
Prior art date
Application number
TW085105149A
Other languages
Chinese (zh)
Inventor
Hideo Miura
Shuji Ikeda
Norio Suzuki
Naoudo Saitou
Asao Nishimura
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Application granted granted Critical
Publication of TW326099B publication Critical patent/TW326099B/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/76—Making of isolation regions between components
    • H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
    • H01L21/76202—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using a local oxidation of silicon, e.g. LOCOS, SWAMI, SILO

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Element Separation (AREA)
  • Local Oxidation Of Silicon (AREA)
  • Formation Of Insulating Films (AREA)

Abstract

A process of producing an oxidized membrane for component separation, which is characterized in comprising the following steps: (1) forming at least one film on a silicon substrate, (2) exposing at least a specified area on the film to form an opening portion, (3) selectively oxidizing the silicon substrate in the opening portion to form an oxidized membrane corresponding to the specified area, (4) removing the film other than the oxidized membrane to expose at least the oxidized membrane in the oxidized membrane and the silicon substrate, (5) further oxidizing the exposed face after the completion of the fourth step and at least the oxidized membrane being exposed, and (6) removing undesirable parts on the periphery of the specified area in the oxidized membrane formed before the fifth step.
TW085105149A 1995-05-08 1996-04-30 Semiconductor device and the process of manufacturing the same TW326099B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP7109585A JPH08306678A (en) 1995-05-08 1995-05-08 Method of manufacturing semiconductor device and semiconductor device

Publications (1)

Publication Number Publication Date
TW326099B true TW326099B (en) 1998-02-01

Family

ID=14514002

Family Applications (1)

Application Number Title Priority Date Filing Date
TW085105149A TW326099B (en) 1995-05-08 1996-04-30 Semiconductor device and the process of manufacturing the same

Country Status (6)

Country Link
JP (1) JPH08306678A (en)
KR (1) KR19990008315A (en)
IN (1) IN187708B (en)
MY (1) MY132186A (en)
TW (1) TW326099B (en)
WO (1) WO1996036073A1 (en)

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS51139263A (en) * 1975-05-28 1976-12-01 Hitachi Ltd Method of selective oxidation of silicon substrate
JPS5249771A (en) * 1975-10-17 1977-04-21 Matsushita Electric Ind Co Ltd Process for production of semiconductor device
JPS5739551A (en) * 1980-08-21 1982-03-04 Seiko Epson Corp Manufacture of selectively oxidized mask
JPH0628282B2 (en) * 1984-09-19 1994-04-13 ソニー株式会社 Method for manufacturing semiconductor device
JP3403210B2 (en) * 1992-02-14 2003-05-06 富士通株式会社 Method for manufacturing semiconductor device

Also Published As

Publication number Publication date
JPH08306678A (en) 1996-11-22
WO1996036073A1 (en) 1996-11-14
MY132186A (en) 2007-09-28
IN187708B (en) 2002-06-08
KR19990008315A (en) 1999-01-25

Similar Documents

Publication Publication Date Title
WO1996039710A3 (en) Method for etching photolithographically produced quartz crystal blanks for singulation
EP0793263A3 (en) Fabrication process of a semiconductor substrate
TW428264B (en) Method for forming an integrated circuit
EP1722403A3 (en) Fabrication method for a thin film smiconductor device
IE841792L (en) Method of manufacturing a semiconductor device
EP0899782A3 (en) Method of manufacturing a field effect transistor
TW348312B (en) Process for producing semiconductor integrated circuit device
TW346664B (en) Mixed-mode IC separated spacer structure and process for producing the same
TW326099B (en) Semiconductor device and the process of manufacturing the same
TW374853B (en) Dry etching method of thin film and method for manufacturing thin film semiconductor device
HK28791A (en) Method of making a semiconductor device
TW334641B (en) Method of manufacturing semiconductor device
KR960008568B1 (en) Semiconductor contact manufacturing method
KR960012575B1 (en) Metal wire forming method of semiconductor device
JPS55128830A (en) Method of working photoresist film
KR960008525B1 (en) Manufacturing method of metal wiring layer pattern
JPS535578A (en) Manufacture of semiconductor device
KR940016695A (en) Contact hole formation method of semiconductor device
KR970003714B1 (en) Method of forming the isolation oxide on the semiconductor device
JPS5797629A (en) Manufacture of semiconductor device
JPS558032A (en) Semi-conductor device manufacturing method
KR960012646B1 (en) Method for forming the metal wiring
JPS6453416A (en) Manufacture of semiconductor device
KR960009102B1 (en) Manufacturing method of semiconductor device fuse
JPS5788725A (en) Manufacture of semiconductor device